Light-emitting module

Abstract

The present invention provides a light-emitting module comprising a first conductivity type semiconductor layer doped with a first conductivity type dopant, a second conductivity type semiconductor layer doped with a second conductivity type dopant, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. The light-emitting module includes a plurality of light-emitting cells having a mesa structure and spaced apart from each other. A partial region of the upper surface of the first conductivity type semiconductor layer is a street region surrounding the plurality of light-emitting cells, and the width of the street region between adjacent light-emitting cells is greater than the height of the first conductivity type semiconductor layer in the street region.

Description

light-emitting module

[0001] The present invention relates to a light-emitting module comprising a plurality of light-emitting cells.

[0002] A light-emitting diode (LED) is a light-emitting device that emits light when current is applied. Recently, light-emitting diodes are being used in various fields such as display devices, automotive lamps, and general lighting. Furthermore, light-emitting diodes have the advantages of a long lifespan, low power consumption, and fast response speed. By fully utilizing these advantages, they are rapidly replacing existing light sources. For example, a display device using light-emitting diodes can be obtained by forming structures of red (Red, R), green (Green, G), and blue (Blue, B) light-emitting diodes (LEDs) that are individually grown on a final substrate.

[0003] Specifically, the light-emitting diode is formed by growing epitaxial layers on a substrate and includes an N-type semiconductor layer, a P-type semiconductor layer, and an active layer interposed between them. An N-electrode pad is formed on the N-type semiconductor layer and a P-electrode pad is formed on the P-type semiconductor layer, so that the light-emitting diode is electrically connected to an external power source through the electrode pads and driven. At this time, current can flow from the P-electrode pad through the semiconductor layers to the N-electrode pad, and light generated through the recombination of electrons and holes in the active layer can be emitted.

[0004] The purpose of the present invention is to provide a light-emitting module with a new structure that improves light-emitting performance and reliability.

[0005] The purpose of the present invention is to provide a light-emitting module capable of increasing light extraction efficiency by blocking side light.

[0006] The purpose of the present invention is to provide a light-emitting module capable of stably supporting a light-emitting cell through an electrode structure even with the miniaturization of the light-emitting cell.

[0007] The purpose of the present invention is to provide a light-emitting module that can improve reliability by minimizing defects in the side portions and minimizing leakage current of the light-emitting cell even with miniaturization of the light-emitting cell.

[0008] The purpose of the present invention is to provide a light-emitting module capable of maintaining stable and uniform light-emitting characteristics without differences in degradation of individual light-emitting cells even during long-term operation by reducing driving voltage deviations between a plurality of light-emitting cells and maintaining a uniform current density.

[0009] The purpose of the present invention is to provide a light-emitting module capable of fundamentally reducing the risk of short circuits between electrodes of light-emitting cells and metal migration of bumps.

[0010] The purpose of the present invention is to provide a light-emitting module that can utilize the space between light-emitting cells as an air path.

[0011] The present invention aims to provide a light-emitting module capable of effectively blocking light leaking out to the sides by preventing light leakage through the street area and electrodes between adjacent light-emitting cells.

[0012] One embodiment of the present invention discloses a light-emitting module comprising a first conductivity semiconductor layer doped with a first conductivity semiconductor dopant, a second conductivity semiconductor layer doped with a second conductivity semiconductor dopant, and an active layer disposed between the first conductivity semiconductor layer and the second conductivity semiconductor layer.

[0013] In one embodiment, the light-emitting module may include a plurality of light-emitting cells that have a mesa structure and are spaced apart.

[0014] In one embodiment, a portion of the upper surface of the first conductivity type semiconductor layer may be a street area surrounding the plurality of light-emitting cells.

[0015] In one embodiment, the width of the street region between adjacent light-emitting cells may be greater than the height of the first conductivity type semiconductor layer in the street region.

[0016] In one embodiment, the height of the first conductive semiconductor layer in the street region may be 50% or more and 100% or less of the height from the upper surface of the street region to the upper surface of the light-emitting cell.

[0017] In one embodiment, the deviation in the width of the street area may be within 5%.

[0018] In one embodiment, the plurality of light-emitting cells may be arranged in the form of an N×M matrix.

[0019] In one embodiment, the width of the street area may be 50% or less of the center distance between the light-emitting cells.

[0020] In one embodiment, the width of the street area may be 10% or less of the length of one side of the light-emitting cell.

[0021] In one embodiment, the width of the street area may be smaller than the height of the light-emitting cell.

[0022] In one embodiment, the deviation of the maximum width of the light-emitting cell may be within 5%.

[0023] In one embodiment, the light-emitting module may further include a support layer for supporting the plurality of light-emitting cells.

[0024] In one embodiment, the height of the support layer may be 5 times or more and 20 times or less the height of the light-emitting cell.

[0025] In one embodiment, the light-emitting module may further include an insulating layer covering the plurality of light-emitting cells.

[0026] In one embodiment, the insulating layer may include a first opening for exposing a portion of the first conductive semiconductor layer and a second opening for exposing a portion of the second conductive semiconductor layer.

[0027] In one embodiment, the first opening may be placed in the street area, and the second opening may be placed on the upper surface of the light-emitting cell.

[0028] In one embodiment, the light-emitting module may further include a first electrode connected to the first conductive semiconductor layer through the first opening and a second electrode connected to the second conductive semiconductor layer through the second opening.

[0029] In one embodiment, the gap between the first electrode and the second electrode may be 3 μm or more and 8 μm or less.

[0030] In one embodiment, the width of the second opening may be 40% or more and 50% or less of the maximum width of the light-emitting cell.

[0031] In one embodiment, the ratio of the minimum width of the light-emitting cell to the width of the street area may be 12.5 or more and 16.5 or less.

[0032] In one embodiment, the light-emitting module may further include a substrate having a conductive pattern connected to the first electrode and the second electrode.

[0033] In one embodiment, the conductive pattern may include a plurality of mounting portions electrically connected to the light-emitting cell.

[0034] In one embodiment, the plurality of seating portions may be arranged rotationally symmetrically.

[0035] In one embodiment, the light-emitting module may further include a protective layer disposed on one surface of the first conductive semiconductor layer.

[0036] The present invention can provide a light-emitting module with a new structure that improves light-emitting performance and reliability.

[0037] The present invention can provide a light-emitting module capable of increasing light extraction efficiency by blocking side light.

[0038] The present invention can provide a light-emitting module that can stably support a light-emitting cell through an electrode structure even when the light-emitting cell is miniaturized.

[0039] The present invention can provide a light-emitting module that can improve reliability by minimizing defects in the side portions and minimizing leakage current of the light-emitting cell even with miniaturization of the light-emitting cell.

[0040] The present invention can provide a light-emitting module that reduces the driving voltage deviation between a plurality of light-emitting cells and maintains a uniform current density, thereby maintaining stable and uniform light-emitting characteristics without differences in degradation of individual light-emitting cells even during long-term operation.

[0041] The present invention can provide a light-emitting module that can fundamentally reduce the risk of short circuits between electrodes of light-emitting cells and metal migration of bumps.

[0042] The present invention can provide a light-emitting module that can utilize the space between light-emitting cells as an air path.

[0043] The present invention can provide a light-emitting module that can effectively block light leaking out to the sides by preventing light leakage through the street area and electrodes between adjacent light-emitting cells.

[0044] FIG. 1 is a plan view showing a light-emitting module according to one embodiment of the present invention.

[0045] Figure 2 is a plan view showing a part of the configuration of Figure 1.

[0046] Figure 3 is a cross-sectional view in the AA' direction of Figure 2.

[0047] Figure 4 is a variation of Figure 3.

[0048] Figure 5 is another variation of Figure 3.

[0049] Figure 6 is an enlarged view showing a magnified portion of the composition of Figure 5.

[0050] Figure 7 is another variation of Figure 3.

[0051] FIG. 8 is a plan view showing a light-emitting module according to another embodiment of the present invention.

[0052] Figure 9 is an enlarged view showing part of the configuration of Figure 8.

[0053] FIG. 10 is a plan view showing the shape of a support layer and a light-emitting cell according to one embodiment of the present invention.

[0054] FIG. 11 is a plan view showing the shape of a support layer and a light-emitting cell according to another embodiment of the present invention.

[0055] FIG. 12 is a plan view showing the shape of a support layer and a light-emitting cell according to another embodiment of the present invention.

[0056] In the following description, numerous specific details are described for the purpose of explanation and to provide a complete understanding of the various embodiments or implementations of the present disclosure. As used herein, “Embodiments” and “Implementations” are interchangeable terms indicating non-limiting examples of devices or methods utilizing one or more of the concepts of the invention disclosed herein. However, it will be apparent that various embodiments may be implemented without utilizing these specific details or by utilizing one or more equivalent arrangements. In other examples, known structures and devices are illustrated in block diagram form to avoid unnecessarily obscuring the various embodiments. Furthermore, while various embodiments may differ from one another, they do not need to be exclusive. For example, specific shapes, configurations, and characteristics of an embodiment may be used or implemented in other embodiments without departing from the scope of the concept of the invention.

[0057] Unless otherwise specified, the illustrated embodiments should be understood as providing exemplary features of varying details in some ways in which the concept of the present invention can actually be realized. Therefore, unless otherwise specified, features, components, modules, layers, membranes, panels, regions and / or modes of various embodiments (hereinafter referred to individually or collectively as “elements”) may be combined, separated, interchanged, and / or rearranged differently without departing from the scope of the concept of the present invention.

[0058] The use of cross-hatching and / or shading in the attached drawings is generally provided to clarify the boundaries between adjacent elements. As such, the presence or absence of cross-hatching or shading, unless otherwise specified, does not imply or indicate any preference or requirement regarding the specific material, material properties, dimensions, proportions, commonalities between the exemplified elements, or any other features, attributes, and characteristics of the elements. Additionally, in the attached drawings, the size and relative size of the elements may be exaggerated for clarity and / or illustrative purposes. When embodiments are implemented differently, specific process sequences may be performed differently from the described order. For example, two consecutively described processes may be performed substantially simultaneously or in an order opposite to the described order. Also, the same reference numerals indicate the same elements.

[0059] When an element such as a layer is referred to as being "on", "connected to," or "coupled to" another element or layer, said element may be directly on, connected to, or coupled to the other element or layer, or an interposed element or layer may exist. However, when an element or layer is referred to as being "directly on", "directly connected to," or "directly coupled to" another element or layer, no interposed element or layer exists. To this end, the term "connected" may refer to a physical, electrical, and / or fluid connection with or without an interposed element. Furthermore, the DR1-axis, DR2-axis, and DR3-axis are not limited to the three axes of an orthogonal coordinate system, such as the x, y, and z axes, and may be interpreted in a broader sense. For example, the DR1-axis, DR2-axis, and DR3-axis may be perpendicular to each other, or they may represent different directions that are not perpendicular to each other. For the purposes of this disclosure, “one or more of X, Y, and Z” and “one or more selected from the group consisting of X, Y, and Z” may be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z, such as, for example, XYZ, XYY, YZ, and ZZ. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed articles.

[0060] Although terms such as “first,” “second,” etc., may be used herein to describe various forms of elements, these elements shall not be limited by these terms. These terms are used to distinguish one element from another. Therefore, the first element discussed below may be named the second element without departing from the teachings of the present disclosure.

[0061] Spatially relative terms such as “below,” “under,” “immediately below,” “lower,” “above,” “upper,” “upper,” “higher,” and “side” (e.g., as in “side wall”) may be used for descriptive purposes and thereby to describe the relationship between one element and another element(s) as illustrated in the drawings. Spatially relative terms are intended to include different orientations of the device in use, operation, and / or manufacture in addition to the orientations illustrated in the drawings. For example, if the device in the drawings is inverted, the element described as “below” or “under” another element or feature will be oriented “above” the other element or feature. Therefore, the exemplary term “below” may include both upper and lower orientations. Additionally, the device may be oriented differently (e.g., rotated 90° or oriented in a different orientation), and thus, spatially relative descriptors used herein may also be interpreted accordingly.

[0062] The technical terms used in this specification are intended to describe specific embodiments and are not limiting. The singular form used in this specification also includes the plural form unless the context clearly indicates otherwise. Additionally, the terms “comprising,” “comprising,” “comprising,” and / or “comprising” used in this specification specify the presence of the mentioned features, integers, steps, operations, elements, components, and / or groups thereof, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. Furthermore, the terms “substantially,” “about,” and other similar terms used in this specification are used to indicate approximation rather than degree, and are used to describe inherent deviations of measured, calculated, and / or provided values ​​that may be recognized by a person of ordinary knowledge in the art.

[0063] Various embodiments are described below with reference to cross-sectional and / or exploded drawings, which are schematic examples of idealized embodiments and / or intermediate structures. As such, variations from the shapes in the drawings may be expected, for example, as a result of manufacturing techniques and / or tolerances. Therefore, the embodiments disclosed herein should not be interpreted as being limited to the shapes of specific illustrated regions, but should be interpreted to include, for example, deviations in shape resulting from manufacturing. In this way, the regions illustrated in the drawings may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of the regions of the device, and thus are not intended to have a limiting meaning.

[0064] As is customary in the art, some embodiments may be illustrated and described in the accompanying drawings in terms of functional blocks, units, and / or modules. Those skilled in the art will understand that these blocks, units, and / or modules are physically implemented by electronic (or optical) circuits, such as logic circuits, discrete components, microprocessors, wiring circuits, memory elements, and wiring connections, formed using semiconductor-based manufacturing technology or other manufacturing technology. Where blocks, units, and / or modules are implemented by microprocessors or other similar hardware, they may be programmed and controlled using software (e.g., microcode) to perform the various functions discussed herein, and may optionally be driven by firmware and / or software. Additionally, each block, unit, and / or module may be implemented by dedicated hardware, or as a combination of dedicated hardware for performing some functions and a processor for performing other functions (e.g., one or more programmed processors and associated circuits). Additionally, each of the blocks, units, and / or modules of some embodiments may be physically separated into two or more interacting and individual blocks, units, and / or modules without departing from the scope of the concept of the present invention. Additionally, the blocks, units, and / or modules of some embodiments may be physically combined into more complex blocks, units, and / or modules without departing from the scope of the concept of the present invention.

[0065] Unless otherwise defined, all terms used herein (including technical or scientific terms) have the same meaning as commonly understood by those skilled in the art to which this disclosure pertains. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with that meaning in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in this specification.

[0066] Hereinafter, the light-emitting module of the present invention will be described in detail through the drawings.

[0067] FIG. 1 is a plan view illustrating a light-emitting module (100) according to one embodiment of the present invention, wherein the light-emitting module (100) may include a plurality of light-emitting cells (120) that have a mesa structure and are spaced apart.

[0068] The light-emitting module (100) may further include a support layer (110) for supporting the plurality of light-emitting cells (120).

[0069] The support layer (110) is not limited to a specific configuration as long as it is configured to support the light-emitting cell (120). For example, the support layer (110) may include a substrate such as a sapphire substrate, a silicon substrate, a silicon carbide substrate, or a spinel substrate as a support substrate. As another example, the support layer (110) may include a substrate such as a gallium nitride substrate, an aluminum nitride substrate, etc.

[0070] In one embodiment, the upper support layer (110) may be a light-transmitting substrate that transmits light. For example, the support layer (110) may include at least one of glass, sapphire, polymer, or epoxy.

[0071] The support layer (110) may have various shapes. FIG. 1 illustrates an example in which the support layer (110) has a rectangular shape, but the shape of the support layer (110) is not limited to this.

[0072] One surface of the support layer (110) may be patterned to form irregularities or protrusions. The irregularities or protrusions may be omitted as an optional configuration.

[0073] A plurality of light-emitting cells (120) may be arranged on one side of the support layer (110). The irregularities or protrusions of the support layer (110) may be formed on the opposite side of the surface where the light-emitting cells (120) are arranged.

[0074] A melting region may be formed on the outer surface of the support layer (110). The melting region may include a dark area with low light transmittance. This prevents light from leaking from the side of the support layer (110) through the dark area. By doing so, light bleed phenomena occurring at the side boundary of the light-emitting module (100) can be suppressed, thereby reducing optical interference between adjacent pixels and improving contrast ratio when applied to a display device, etc.

[0075] The plurality of light-emitting cells (120) may be spaced apart from each other. The arrangement of the plurality of light-emitting cells (120) may be varied in many ways. For example, the plurality of light-emitting cells (120) may be arranged in the form of an N×M matrix (N and M are natural numbers). FIG. 1 illustrates an example in which nine light-emitting cells (120) are arranged in the form of a 3×3 matrix.

[0076] The light-emitting cell (120) may have various planar shapes. For example, the light-emitting cell (120) may have a rectangular planar shape with a first-direction side length L1 and a second-direction side length L2.

[0077] The first directional side length L1 of the light-emitting cell (120) may be 250 μm or less. The second directional side length L2 of the light-emitting cell (120) may be 250 μm or less. The first directional side length L1 may be different from the second directional side length L2.

[0078] The area (L1*L2) of the light-emitting cell (120) is 62,500 μm 2 It may be less than. The light-emitting cell (120) may have a size capable of high resolution and high density integration, such as a micro LED display.

[0079] The first direction center distance (P1) of the light-emitting cell (120) may be 270 μm or less. The second direction center distance (P2) of the light-emitting cell (120) may be 270 μm or less.

[0080] At least one electronic element (180) may be further disposed in the light-emitting module (100). The electronic element (180) may be disposed spaced apart from the light-emitting cell (120). For example, the electronic element (180) may be a sensor, a light sensor, a receiver, etc.

[0081] FIG. 2 is a plan view showing a support layer (110) and a plurality of light-emitting cells (120) of the light-emitting module (100) of FIG. 1, and FIG. 3 is a cross-sectional view in the AA' direction of the light-emitting module (100) of FIG. 2, showing the cross-sectional structure of the light-emitting cell (120).

[0082] The light-emitting module (110) may include a first conductive semiconductor layer (121) doped with a first conductive dopant, a second conductive semiconductor layer (123) doped with a second conductive dopant, and an active layer (122) disposed between the first conductive semiconductor layer (121) and the second conductive semiconductor layer (123).

[0083] The first conductivity type semiconductor layer (121) may be a semiconductor layer disposed on one surface of the support layer (110) and may include a phosphide or nitride-based semiconductor such as (Al, Ga, In)P or (Al, Ga, In)N. Additionally, the first conductivity type semiconductor layer (121) may be doped as n-type by including one or more impurities such as Si, C, Ge, Sn, Te, Pb, etc. The present invention is not limited thereto, and as another example, the first conductivity type semiconductor layer (121) may be doped as an opposite conductivity type by including a p-type dopant. Furthermore, the first conductivity type semiconductor layer (121) may be composed of a single layer or multiple layers.

[0084] The second conductivity semiconductor layer (123) may include a phosphide-based or nitride-based semiconductor such as (Al, Ga, In)P or (Al, Ga, In)N. The second conductivity semiconductor layer (123) may be doped with a conductivity type opposite to that of the first conductivity semiconductor layer (121). For example, the second conductivity semiconductor layer (123) may be doped with a p-type by including an impurity such as Mg.

[0085] The above active layer (122) is a light-emitting layer disposed between the first conductivity semiconductor layer (121) and the second conductivity semiconductor layer (123), and may include a phosphide or nitride semiconductor such as (Al, Ga, In)P or (Al, Ga, In)N, and may be grown on the first conductivity semiconductor layer (121) using a technology such as MOCVD, MBE, or HVPE.

[0086] Additionally, the active layer (122) may include a quantum well structure (QW) comprising at least two barrier layers and at least one well layer. Furthermore, the active layer (122) may include a multiple quantum well structure (MQW) comprising a plurality of barrier layers and a plurality of well layers. The wavelength of light emitted from the active layer (122) can be controlled by controlling the composition ratio of the materials constituting the well layers. In this case, the well layers may commonly contain the same element, and may include, for example, In.

[0087] A light-emitting surface for emitting light may be formed on the side of the first conductive semiconductor layer (121) or the second conductive semiconductor layer (123). For example, light generated in the active layer (122) may be emitted to the outside by passing through the first conductive semiconductor layer (121) or emitted to the outside by passing through the second conductive semiconductor layer (123). On one side of the first conductive semiconductor layer (121) or one side of the second conductive semiconductor layer (123), irregularities or protrusions may be formed to increase light extraction efficiency.

[0088] Referring to FIG. 3, the light-emitting cell (120) is a light-emitting structure and may have a mesa structure formed by etching a second conductive semiconductor layer (123) and an active layer (122) so that a portion of the upper surface of the first conductive semiconductor layer (121) is exposed.

[0089] The light-emitting cell (120) includes an active layer (122) and a second conductive semiconductor layer (123), and may include a portion of the first conductive semiconductor layer (121).

[0090] A portion of the upper surface of the first conductive semiconductor layer (121) may be a street region (ST) surrounding the plurality of light-emitting cells (120). The plurality of light-emitting cells (120) may be connected to each other through the street region (ST) of the first conductive semiconductor layer (121).

[0091] The remaining area of ​​the upper surface of the first conductive semiconductor layer (121), excluding the street area (ST), may be a village area (VG) where the light-emitting cell (120) is placed.

[0092] The above village area (VG) is an area where the light-emitting cells (120) are arranged, and may be provided in a number equal to the number of light-emitting cells (120). The above village area (VG) may be arranged in the form of an N×M matrix (N, M are natural numbers).

[0093] The above street region (ST) is a region surrounding the above village region (VG), and one village region (VG) may have its edges surrounded by the street region (ST). Through the above street region (ST), the first conductive semiconductor layer (121) of each light-emitting cell (120) may be connected to each other.

[0094] The above street area (ST) can form a single area in the shape of a mesh on a planar view. A portion of one surface of the first conductive semiconductor layer (121) may be exposed by the above street area (ST).

[0095] The width (D2) of the street area (ST) between adjacent village areas (VG) may correspond to the spacing between adjacent village areas (VG). The width (D2) of the street area (ST) may be set in various ways. For example, the width (D2) of the street area (ST) may be within 20 μm.

[0096] For example, the width (D2) of the street area (ST) may be 50% or less of the center distance (P1, P2) between the light-emitting cells (120). This may mean that the side lengths (L1, L2) of the light-emitting cells (120) are greater than or equal to the width (D2) of the street area (ST). By doing so, the proportion of the non-light-emitting area (street area) that does not emit light in the total area of ​​the light-emitting module (100) is reduced relative to the light-emitting area, thereby improving the overall brightness. In particular, to implement a high-resolution display, it is essential to maximize the light-emitting area within the pixel pitch (center distance), and this can satisfy these requirements. In addition, by limiting the width (D2) of the street area (ST) to a reasonable level in proportion to the size of the light-emitting cell (120), the decrease in mechanical strength of the entire light-emitting module (100) that may occur due to an excessively wide street area (ST) can be prevented, and the misalignment or damage of the light-emitting cell (120) that may occur during the manufacturing process can be prevented.

[0097] Additionally, the width (D2) of the street area (ST) may be 10% or less of the length (L1, L2) of one side of the light-emitting cell (120). This allows the space occupied by the street area (ST) to be minimized relative to the size of the light-emitting cell (120), and the pixel density of the light-emitting module (100) to be increased, thereby improving the performance and reliability of the light-emitting module (100).

[0098] By controlling the width (D2) of the street area (ST) to a very small value of 10% or less of the size of the light-emitting cell (120), a larger number of light-emitting cells (120) can be integrated in the same area. In addition, the present invention enables high-density integration by controlling the width (D2) of the street area (ST) to 10% or less in proportion to the size of the light-emitting cell (120), thereby securing a minimum physical insulation distance to prevent short circuits while minimizing the non-light-emitting area.

[0099] The deviation in the width (D2) of the street area (ST) between adjacent village areas (VG) may be within 5%. This allows for improved uniformity of light emission across the entire area of ​​the light-emitting module (100). By uniformly controlling the width (D2) of the street area (ST), the shape and resistance of the electrodes (150, 160) formed in each light-emitting cell (120), and the heat dissipation path around the light-emitting cell (120) can be configured similarly. This reduces the deviation in driving voltage (Vf) between multiple light-emitting cells (120) and makes the current density uniform, thereby suppressing the occurrence of 'hot spots' and ensuring stable and uniform light emission characteristics without differences in degradation of individual light-emitting cells (120) even during long-term operation.

[0100] The light-emitting module (100) may further include a substrate (130) including a conductive pattern.

[0101] The substrate (130) is not limited to a specific type of substrate, such as a circuit board, a light-transmitting substrate, a glass substrate, a TFT substrate, a polymer substrate, a flexible substrate, a polyimide substrate, a CMOS substrate, or a silicon substrate. The substrate (130) may have various planar shapes. The substrate (130) serves as a wiring board that receives power from an external driving circuit and distributes it to each light-emitting cell (120), and may serve as a base for the mechanical stability of the entire light-emitting module (100).

[0102] The plurality of light-emitting cells (120) may be disposed between the support layer (110) and the substrate (130). The substrate (130) may face the support layer (110) with the plurality of light-emitting cells (120) in between. The substrate (130) may be disposed on one side of the plurality of light-emitting cells (120), and the support layer (110) may be disposed on the other side.

[0103] The substrate (130) can be electrically connected to the plurality of light-emitting cells (120) through a conductive pattern. The conductive pattern may include a conductive material.

[0104] The substrate (130) may include a plurality of substrate pads (132, 134) for receiving power from an external source. The substrate pads (132, 134) may be electrically connected to each light-emitting cell (120) through a conductive pattern.

[0105] For example, one of the substrate pads (132, 134) may be a common pad (132) that is commonly connected to a plurality of light-emitting cells (120). The remaining of the substrate pads (132, 134), excluding the common pad (132), may be individual pads (134) that are individually connected to each light-emitting cell (120). Through this, the lighting of each light-emitting cell (120) can be controlled individually. This electrode connection structure enables matrix driving, which allows the brightness of each light-emitting cell (120) to be controlled independently and precisely even in a complex display system.

[0106] Meanwhile, each light-emitting cell (120) can emit light of the same peak wavelength. As another example, at least one of the plurality of light-emitting cells (120) can emit light of a different peak wavelength than the other light-emitting cell (120).

[0107] The light-emitting cell (120) may have a maximum width (D4) and a minimum width (D5) in cross-section. For example, the maximum width (D4) of the light-emitting cell (120) may correspond to the width of the bottom of the light-emitting cell (120). The maximum width (D4) may be equal to the side lengths (L1, L2) of the light-emitting cell (120) of FIG. 1.

[0108] The deviation of the maximum width (D4) of the light-emitting cell (120) may be within 5%. This reduces the deviation in current density and driving voltage (Vf) between multiple light-emitting cells (120) and allows for stable and uniform light-emitting characteristics to be maintained without degradation of individual light-emitting cells (120) even during long-term operation.

[0109] The minimum width (D5) of the light-emitting cell (120) may correspond to the top width of the light-emitting cell (120). The top of the light-emitting cell (120) may face the substrate (130).

[0110] The ratio of the minimum width (D5) of the light-emitting cell (120) to the width (D2) of the street area (ST) may be 12.5 or greater and 16.5 or less. If the ratio is less than 12.5 (i.e., the width (D2) of the street area (ST) is excessively large), the density of the light-emitting cell (120) is low, and the light intensity may decrease. If the ratio exceeds 16.5 (i.e., the width (D2) of the street area (ST) is excessively small), the possibility of a short circuit between the light-emitting cells (120) increases, and the defect rate may increase.

[0111] Referring again to FIG. 3, the width (D2) of the street region may be smaller than the height (T2) of the light-emitting cell (120). This allows for high-density integration of the light-emitting cells (120). By minimizing the width (D2) of the street region (ST), which is a non-light-emitting area that does not contribute to light emission, more light-emitting cells (120) can be integrated per unit area to increase pixel density and maximize the ratio of the light-emitting area to the total area. Additionally, this structure allows the first electrode (150) formed in the street region (ST) to function as an effective light-blocking wall formed high along the side of the light-emitting cell (120). Accordingly, crosstalk between adjacent light-emitting cells (120) can be effectively suppressed, thereby improving the contrast ratio and color purity of the display. In addition, the vertical cross-sectional area of ​​the electrode grid formed by the first electrode (150) is increased, thereby improving the rigidity as a mechanical frame supporting a plurality of light-emitting cells (120) and increasing the structural stability of the entire module.

[0112] The height of the support layer (110) may be 5 times or more and 20 times or less the height (T2) of the light-emitting cell (120). For example, the height of the support layer (110) may be 500 μm or less.

[0113] The width (D2) of the street area (ST) may be greater than the height (T1) of the first conductive semiconductor layer (121) in the street area (ST). The height (T1) of the first conductive semiconductor layer (121) in the street area (ST) may represent the minimum thickness in the street area (ST). For example, as shown in FIG. 4, when an irregularity or protrusion (P) structure is formed on one surface of the first conductive semiconductor layer (121), the height (T1) of the first conductive semiconductor layer (121) in the street area (ST) may be the minimum thickness measured based on the lowest point of the irregularity or protrusion (P).

[0114] This may mean that the above-mentioned street region (ST) has a relatively wide, that is, a wide and shallow trench structure compared to its height (T1). Through this structure, stability and reliability of the manufacturing process can be secured. Specifically, by ensuring a wide bottom width of the street region (ST), the surface of the first conductive semiconductor layer (121) exposed during the etching process to form a mesa structure can be formed uniformly and stably. In addition, in the process of depositing the first electrode (150), the electrode material is smoothly filled up to the bottom of the street region (ST), thereby enabling a wide and stable ohmic contact between the first conductive semiconductor layer (121) and the first electrode (150). This can lower the electrode resistance and distribute the current uniformly, thereby improving the driving efficiency and reliability of the light-emitting cell (120).

[0115] The height (T1) of the first conductive semiconductor layer (121) in the above street region (ST) may be 50% or more and 100% or less of the height (T2) from the upper surface of the street region (ST) to the upper surface of the light-emitting cell (120). This means that the first conductive semiconductor layer (121) in the street region (ST) remains thick to a certain extent even after mesa etching, thereby ensuring mechanical strength and electrical and thermal reliability of the light-emitting module (100). The first conductive semiconductor layer (121) formed thickly in the street region (ST) may be a solid common foundation supporting a plurality of individually separated light-emitting cells (120), thereby preventing damage, cracking, or bending even when the support layer (110) is removed, improving structural stability, and increasing the yield of the subsequent mass production process. In addition, the thick first conductivity semiconductor layer (121) in the street region (ST) provides a sufficient path for the current to spread widely, thereby improving current spreading characteristics and strengthening the role of a thermal path that effectively dissipates heat generated in the active layer (122), which can ensure the driving stability and long lifespan of the light-emitting cell (120).

[0116] Meanwhile, the light-emitting module (100) may further include an insulating layer (140) covering the light-emitting cell (120). The insulating layer (140) may include various insulating materials. For example, the insulating layer (140) may be a layer containing at least one of SiO2 and SiN. If the insulating layer (140) contains both SiO2 and SiN, optical properties can be optimized and the stability of the thin film improved by utilizing the different physical properties (e.g., refractive index, stress characteristics) of each material.

[0117] The insulating layer (140) can cover a plurality of light-emitting cells (120) and a street area (ST).

[0118] The insulating layer (140) may include a first opening (OP1) that exposes a portion of the first conductive semiconductor layer (121) and a second opening (OP2) that exposes a portion of the second conductive semiconductor layer (123).

[0119] The first opening (OP1) may be placed in a street area (ST). The first opening (OP1) may be provided in multiple numbers. The second opening (OP2) may be placed on the upper surface of the light-emitting cell (120).

[0120] The light-emitting module (100) may include a first electrode (150) connected to the first conductive semiconductor layer (121) through the first opening (OP1) and a second electrode (160) connected to the second conductive semiconductor layer (123) through the second opening (OP2).

[0121] The first electrode (150) covers the street area (ST) and can extend to the side of the adjacent light-emitting cell (120). The first electrode (150) can extend to a height higher than the active layer (122) of the light-emitting cell (120). Light emitted from the active layer (122) can be reflected by the first electrode (150) and emitted through the emission surface, thereby increasing the light extraction efficiency. Additionally, by covering the street area (ST), the first electrode (150) acts as a light-blocking wall that physically blocks light leaking to the adjacent light-emitting cell (120), thereby suppressing optical interference.

[0122] The first electrode (150) may have a mesh shape corresponding to the street area (ST).

[0123] The second electrode (160) may be provided for each light-emitting cell (120). The second electrode (160) may be placed on the upper surface of the light-emitting cell (120).

[0124] The gap (D1) between the first electrode (150) and the second electrode (160) may be 3 μm or more and 8 μm or less. The space formed by the gap (D1) between the first electrode (150) and the second electrode (160) may be an air path. The air path forms an air layer between the two electrodes (150, 160) to secure an insulating distance and suppress the penetration of moisture or contaminants, thereby reducing the risk of a short circuit between the electrodes (150, 160).

[0125] The width (D3) of the second opening (OP2) may be 40% or more and 50% or less of the maximum width (D4) of the light-emitting cell (120). This allows for miniaturization of the light-emitting cell (120) while minimizing defects on the side of the light-emitting cell (120) and minimizing leakage current of the light-emitting cell (120) through the second electrode (160), thereby improving reliability. The side of the light-emitting cell (120) is prone to crystal defects due to damage during processes such as etching. If the second electrode (160) comes into direct contact with these defective areas, significant leakage current may occur, which can cause a decrease in efficiency and a shortened lifespan of the light-emitting cell (120). The present invention can block such leakage current paths by limiting the range of the width (D3) of the second opening (OP2) so that the second electrode (160) comes into contact only with the central area where there are few defects.

[0126] FIG. 4 is a modified example of the light-emitting module (100) of FIG. 3. In FIG. 4, the support layer (110) of the light-emitting module (100) may be omitted as an optional configuration. Additionally, the light-emitting module (100) may further include a cover layer (170) disposed on one side of the first conductive semiconductor layer (121).

[0127] For example, the cover layer (170) may be a protective layer disposed on one side of the first conductive semiconductor layer (121). The protective layer may include an insulating material.

[0128] As another example, the cover layer (170) may be an optical film layer (170). The optical film layer may be a wavelength conversion layer. The wavelength conversion layer may include a wavelength conversion material. For example, white light can be realized by using a wavelength conversion layer containing a yellow phosphor together with a light-emitting cell (120) that emits blue light. Through this, the light-emitting module (100) can be applied to vehicle lamps, lighting devices, display devices, data communication devices, etc.

[0129] As another example, the cover layer (170) may be a light-transmitting material.

[0130] The above cover layer (170) may also be placed on one side of the support layer (110) of the light-emitting module (100) of FIG. 3. The above cover layer (170) may be omitted as an optional configuration.

[0131] FIG. 5 is another variation of FIG. 3, wherein the light-emitting module (100) may include both a support layer (110) and a cover layer (170).

[0132] In FIG. 5, the light-emitting module (100) may include electrode pads (PDs) connected to the first and second electrodes (150, 160) of each light-emitting cell (120). The first and second electrodes (150, 160) may be electrically connected to a substrate (130) through the electrode pads (PDs).

[0133] One of the above electrode pads (PDs) is a common pad that is commonly connected to the first conductive semiconductor layer (120) of a plurality of light-emitting cells (120), and the remaining electrode pads (PDs) may be individual pads that are individually connected to each light-emitting cell (120).

[0134] The plurality of light-emitting cells (120) can be stably supported by the electrode pads (PDs). Even if the support layer (110) is removed or the thickness (T1) of the first conductive semiconductor layer (121) in the street region (ST) is formed thinly, the light-emitting cells (120) can be stably supported by the electrode pads (PDs).

[0135] The substrate (130) may include a conductive pattern (135). The conductive pattern (135) may include a conductive material.

[0136] The light-emitting module (100) may further include an insulating layer (190) disposed on one side of the substrate (130) facing the light-emitting cell (120). A conductive pattern (135) may be exposed through an open area of ​​the insulating layer (190). The insulating layer (190) may be omitted as an optional configuration.

[0137] The conductive pattern (135) may include a plurality of mounting portions (136) electrically connected to the light-emitting cell (120). The mounting portions (136) may protrude from the conductive pattern (135). The electrode pad (PD) of the light-emitting cell (120) may be placed on the mounting portions (136).

[0138] A bump (B) may be placed between the above-mentioned mounting portion (136) and the electrode pad (PD). The electrode pad (PD) and the mounting portion (136) may be connected through the bump (B).

[0139] The bump (B) may include a plurality of materials. For example, the bump (B) may include at least two of In, Al, Ti, Ni, Au, Ag, or Cu. The bump (B) may include the same material as the active layer of the light-emitting cell (120). This minimizes the effect of deformation caused by thermal expansion. Specifically, the coefficient of thermal expansion (CTE) of the light-emitting cell (120) and the bump (B) becomes similar, thereby mitigating mechanical stress caused by heat generated during operation and preventing the breakdown or cracking of the joint, thereby ensuring long-term reliability.

[0140] The substrate (130) may include a plurality of substrate pads in a peripheral area. The substrate pads may be connected to a conductive pattern (135).

[0141] FIG. 6 is an enlarged view showing a first electrode (150) or a second electrode (160) connected to a light-emitting cell (120) at a first opening (OP1) or a second opening (OP2). Referring to FIG. 6, the first electrode (150) or the second electrode (160) may include a plurality of sequentially stacked metal layers. For example, the first electrode (150) or the second electrode (160) may include metal layers such as Al, Ti, Pt, W, Au, Sn, Nb, or Ti.

[0142] An additional insulating layer (142) may be further disposed between the insulating layer (140) and the first or second electrode (150, 160). The additional insulating layer (142) may include a plurality of layers.

[0143] FIG. 7 is a cross-sectional view illustrating a light-emitting module (100) according to another embodiment of the present invention as a variation of FIG. 5. In FIG. 7, the support layer (110) may be omitted as an optional component. The cover layer (170) may be a light-transmitting material.

[0144] The above cover layer (170) may include a protrusion (R) protruding in the direction of light emission on one surface. The protrusion (R) may serve to guide the direction of light emitted from the light-emitting cell (120). For example, the protrusion (R) may concentrate or diffuse the light emitted from the light-emitting cell (120).

[0145] The protrusion (R) may have various shapes. For example, the vertical thickness (T4) of the protrusion (R) may be greater than the horizontal width (D6), thereby improving the straightness of the light emitted from the light-emitting cell (120). However, the shape of the protrusion (R) is not limited to this. As another example, the thickness (T4) of the protrusion (R) may be smaller than the horizontal width (D6) of the protrusion (R), thereby diffusing the light emitted from the light-emitting cell (120) and increasing the directional angle.

[0146] The plurality of light-emitting cells (120) can share the cover layer (170).

[0147] The above cover layer (170) may include a plurality of protrusions (R). Each protrusion (R) may be positioned corresponding to a single light-emitting cell (120). The protrusion (R) may be located in an area that overlaps vertically with the corresponding light-emitting cell (120).

[0148] Therefore, one protrusion (R) and one light-emitting cell (120) can form a unit. The vertical thickness (T4) of one protrusion (R) may be greater than the vertical thickness (T3) of the semiconductor layer containing the light-emitting cell (120) corresponding to the protrusion (R). Thus, the optical path inside the protrusion (R) can be made relatively longer relative to the vertical thickness (T3) of the semiconductor layer, thereby increasing the possibility that light will be emitted in an intended direction.

[0149] The horizontal width (D6) of the above protrusion (R) may be smaller than the maximum width (D4) on the cross-section of a single light-emitting cell (120). Thus, it is possible to prevent the light emitted from each of the protrusions (R) from overlapping with each other.

[0150] The upper vertex (C) of the above protrusion (R) can be vertically overlapped with the second opening (OP2) of the insulating layer (140) of the corresponding light-emitting cell (120). By separating the upper vertex (C) of the above protrusion (R) and the insulating layer (140) in a vertical direction, it is possible to prevent light from being emitted due to internal total reflection.

[0151] FIG. 8 is a plan view illustrating a light-emitting module (200) according to another embodiment of the present invention. The light-emitting module (200) of FIG. 8 will be described in detail, focusing on the differences from the light-emitting module (100) of FIG. 1 to 7.

[0152] The light-emitting module (200) may include a support layer (210) and a plurality of light-emitting cells (220) spaced apart from one surface of the support layer (210). The support layer (210) may be configured in the same way as the support layer (110) of the light-emitting module (100) of FIGS. 1 to 7. The support layer (210) may be omitted.

[0153] The light-emitting cell (220) may be configured identically to the light-emitting cell (120) of FIGS. 1 to 7, except that it includes a plurality of light-emitting structures. Each light-emitting structure may include a first conductivity type semiconductor layer (121), an active layer (122), and a second conductivity type semiconductor layer (123).

[0154] The above-mentioned light-emitting structures are sequentially stacked and can emit light of different peak wavelengths. For example, by vertically stacking light-emitting structures that emit red, green, and blue light, a single light-emitting cell (120) can function as a single pixel that implements full color. Through this, a display with high efficiency and high color reproduction can be realized without a separate color filter.

[0155] As the light-emitting cell (120) comprises a plurality of light-emitting structures, the light-emitting module (100) may include a plurality of electrodes electrically connected to each light-emitting structure. The electrodes may be electrically connected to a substrate (130) through an electrode pad (PD).

[0156] FIG. 8 illustrates an example in which the light-emitting module (200) includes four electrode pads (PDs) for each light-emitting cell (220), wherein one of the electrode pads (PDs) is a common pad connected to a plurality of light-emitting structures, and the remaining electrode pads (PDs) may be individual pads connected to each light-emitting structure.

[0157] The substrate (230) may include a conductive pattern (235). The conductive pattern (235) may include a conductive material.

[0158] The light-emitting module (200) may further include an insulating layer (290) disposed on one side of the substrate (230) facing the light-emitting cell (230). A conductive pattern (235) may be exposed through an open area of ​​the insulating layer (290). The light-emitting module (200) may further include at least one electronic element (280) disposed on one side of the substrate (230).

[0159] Referring to FIG. 9, the conductive pattern (235) may include a plurality of mounting portions (236) electrically connected to the light-emitting cell (220). The mounting portions (236) may protrude from the conductive pattern (235). The electrode pad (PD) of the light-emitting cell (220) may be placed on the mounting portions (236).

[0160] The plurality of mounting portions (236) can be arranged in a rotationally symmetric manner. The contact area with the light-emitting cell (220) can be maximized through the mounting portions (236). In addition, the rotationally symmetric structure of the mounting portions (236) can increase the process tolerance for misalignment of the rotational direction of the light-emitting cell (220) during the flip-chip bonding process. That is, since a stable electrical connection is possible even if the light-emitting cell (220) is positioned in a slightly rotated state, the yield can be improved during mass production.

[0161] A bump (B) may be placed between the above-mentioned mounting portion (236) and the electrode pad (PD). The electrode pad (PD) and the mounting portion (236) may be connected through the bump (B).

[0162] The bump (B) may include a plurality of materials. For example, the bump (B) may include at least two of In, Al, Ti, Ni, Au, Ag, or Cu. The bump (B) may include the same material as the active layer of the light-emitting cell (220). This minimizes the effect of deformation caused by thermal expansion. Specifically, the coefficient of thermal expansion (CTE) of the light-emitting cell (220) and the bump (B) becomes similar, thereby mitigating mechanical stress caused by heat generated during operation and preventing the breakdown or cracking of the joint, thereby ensuring long-term reliability.

[0163] The substrate (230) may include a plurality of substrate pads (232) in a peripheral area. The substrate pads (232) may be connected to a conductive pattern (235).

[0164] Meanwhile, the support layer (110, 210) and the light-emitting cell (120, 220) of FIGS. 1 to 9 may have various planar shapes, and the support layer (110, 210) may support various number of light-emitting cells (120, 220) having various shapes.

[0165] The above support layer (110, 210) may be composed of a single base material in which a plurality of light-emitting cells (120, 220) are arranged as light-emitting units and separated into various shapes.

[0166] For example, FIGS. 10 to 12 illustrate various variations of the planar shape and arrangement of the support layer (110, 210) and light-emitting cell (120, 220) of FIGS. 1 to 9. In FIGS. 10 to 12, W is a single substrate in which a plurality of light-emitting cells (120, 220) are arranged.

[0167] First, referring to FIG. 10, a plurality of light-emitting cells (320) may be arranged on a base material (W). The light-emitting cells (320) may include a plurality of sides in a polygonal shape. The support layer (310) into which the base material (W) is divided may also include a plurality of sides in a polygonal shape. The number of sides of the support layer (310) may be the same as the number of sides of the light-emitting cells (320).

[0168] Next, referring to FIG. 11, a plurality of light-emitting cells (420) may be arranged on a base material (W). The light-emitting cells (420) may include a plurality of sides in a polygonal shape. Adjacent sides of the light-emitting cells (420) may meet at obtuse angles to each other. The support layer (410) into which the base material (W) is divided may also include a plurality of sides in a polygonal shape. At least some of the adjacent sides of the support layer (410) may meet at obtuse angles to each other. The number of sides of the support layer (410) may be greater than the number of sides of the light-emitting cells (420). Through this, the number of light-emitting cells (420) arranged on the base material (W) can be maximized, and the number of support layers (410) that can be created when the base material (W) is divided to form the support layer (410) can be maximized. In other words, by using polygons, especially shapes capable of tessellation such as hexagons, the area wasted during the scribing process of the base material (W) can be minimized, thereby reducing manufacturing costs and increasing productivity.

[0169] Additionally, the support layer (410) may include protrusions and depressions on its sides. This allows the length of the sides of the support layer (410) to be increased and the amount of light emitted from the sides to be increased.

[0170] Next, referring to FIG. 12, a plurality of light-emitting cells (520) may be arranged on a base material (W). The light-emitting cells (520) may include a plurality of sides in a polygonal shape. Adjacent sides of the light-emitting cells (520) may meet at obtuse angles to each other. The number of sides of the light-emitting cells (520) may be seven or more. The support layer (510) into which the base material (W) is divided may also include a plurality of sides in a polygonal shape. The number of sides of the support layer (510) may be less than the number of sides of the light-emitting cells (520). Through this, the number of light-emitting cells (420) arranged on the base material (W) can be maximized.

[0171] A space (part of the street area (ST)) surrounded by the light-emitting cells (520) can be formed on the support layer (510). By the space, a large space can be secured for forming electrodes of the light-emitting cells (520), and electrode formation can be easily performed. In addition, accessories (e.g., electronic components) such as Zener diodes, sensors, and control devices can be placed in the space, thereby increasing integration density and improving performance.

[0172] The light-emitting module (100, 200, 300, 400, 500) of the present invention can be applied to various light-emitting devices such as lighting, displays, BLUs, automotive lighting devices, and data communication devices.

[0173]

[0174] Although the present invention has been described above with reference to preferred embodiments, those skilled in the art or those with ordinary knowledge in the art will understand that various modifications and changes can be made to the invention without departing from the spirit and technical scope of the invention as described in the claims set forth below.

[0175] Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be determined by the claims.

Claims

1. A light-emitting module comprising a first conductivity type semiconductor layer doped with a first conductivity type dopant, a second conductivity type semiconductor layer doped with a second conductivity type dopant, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, It includes a plurality of spaced-apart light-emitting cells having a mesa structure, and A portion of the upper surface of the first conductivity-type semiconductor layer is a street region surrounding the plurality of light-emitting cells, and A light-emitting module in which the width of the street region between adjacent light-emitting cells is greater than the height of the first conductivity type semiconductor layer in the street region.

2. In Claim 1, A light-emitting module in which the height of the first conductive semiconductor layer in the street region is 50% or more and 100% or less of the height from the upper surface of the street region to the upper surface of the light-emitting cell.

3. In Claim 1, A light-emitting module in which the deviation of the width of the above street area is within 5%.

4. In Claim 1, The above plurality of light-emitting cells are arranged in an N×M matrix form in a light-emitting module.

5. In Claim 1, A light-emitting module in which the width of the street area is 50% or less of the center distance between the light-emitting cells.

6. In Claim 1, A light-emitting module in which the width of the street area is 10% or less of the length of one side of the light-emitting cell.

7. In Claim 1, A light-emitting module in which the width of the street area is smaller than the height of the light-emitting cell.

8. In Claim 1, A light-emitting module in which the deviation of the maximum width of the light-emitting cell is within 5%.

9. In Claim 1, A light-emitting module further comprising a support layer for supporting the plurality of light-emitting cells.

10. In Claim 9, A light-emitting module in which the height of the support layer is 5 times or more and 20 times or less the height of the light-emitting cell.

11. In Claim 1, It further includes an insulating layer covering the plurality of light-emitting cells, The above insulating layer is a light-emitting module comprising a first opening for exposing a portion of the first conductive semiconductor layer and a second opening for exposing a portion of the second conductive semiconductor layer.

12. In Claim 11, The first opening is positioned in the street area, and The second opening above is a light-emitting module disposed on the upper surface of the light-emitting cell.

13. In Claim 11, A light-emitting module further comprising a first electrode connected to the first conductive semiconductor layer through the first opening and a second electrode connected to the second conductive semiconductor layer through the second opening.

14. In Claim 13, A light-emitting module in which the gap between the first electrode and the second electrode is 3 μm or more and 8 μm or less.

15. In Claim 11, A light-emitting module in which the width of the second opening is 40% or more and 50% or less of the maximum width of the light-emitting cell.

16. In Claim 1, A light-emitting module in which the ratio of the minimum width of the light-emitting cell to the width of the street area is 12.5 or more and 16.5 or less.

17. In Claim 13, A light-emitting module further comprising a substrate having a conductive pattern connected to the first electrode and the second electrode.

18. In Claim 17, The above conductive pattern is a light-emitting module comprising a plurality of mounting portions electrically connected to the light-emitting cell.

19. In Claim 18, The above plurality of mounting portions are a light-emitting module arranged in rotational symmetry.

20. In Claim 1, A light-emitting module further comprising a protective layer disposed on one surface of the first conductive semiconductor layer.

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