Crystal growth device

Abstract

One or more embodiments of the present description relate to a crystal growth device, comprising: a crucible internally provided with a growth cavity; a crucible cover provided with a guide hole in communication with the growth chamber; and an assistive assembly comprising a flow guide tube and a trapping box, wherein the trapping box is internally provided with a trapping chamber, the flow guide tube is internally provided with a flow guide channel, a first end of the flow guide channel is in communication with the guide hole, a second end of the flow guide channel is in communication with the trapping chamber, and the temperature in the trapping chamber is lower than the temperature in the growth cavity.

Description

A crystal growth apparatus Technical Field

[0001] This specification relates to the field of crystal growth technology, and in particular to a crystal growth apparatus. Background Technology

[0002] Crystal growth is an important branch of materials science, involving the generation of crystals from melts, solutions, or gas phases under controlled conditions. Silicon carbide (SiC) crystals, as a high-performance semiconductor material, have broad application potential due to their superior properties. Among various growth methods, such as physical vapor transport (PVT), liquid phase (LPE), and chemical vapor deposition (CVD), the liquid phase method is commonly used due to its ability to grow high-quality SiC crystals at a relatively fast growth rate. However, the liquid phase method involves significant solvent evaporation during SiC crystal growth, and the low temperature near the observation aperture can lead to the deposition of these volatiles, causing blockage of the observation aperture and hindering infrared temperature measurement and monitoring.

[0003] Therefore, it is desirable to provide a crystal growth apparatus that ensures that volatiles do not clog the observation aperture and affect the monitoring of crystal growth throughout the entire crystal growth cycle. Summary of the Invention

[0004] This specification provides a crystal growth apparatus, comprising: a crucible having a growth chamber inside; a crucible cover having a guide hole communicating with the growth chamber; and auxiliary components including: a flow guide tube and an interception box, wherein the interception box has an interception chamber inside, the flow guide tube has a flow guide channel inside, a first end of the flow guide channel communicating with the guide hole, a second end of the flow guide channel communicating with the interception chamber, and the temperature inside the interception chamber being lower than the temperature inside the growth chamber.

[0005] In some embodiments, the interception box includes a ventilated plate, and at least one wall of the interception cavity is formed by the ventilated plate.

[0006] In some embodiments, the interception box is detachably connected to the flow guide pipe.

[0007] In some embodiments, the flow channel includes a first guide segment and a second guide segment that are interconnected. A first end of the first guide segment is connected to the guide hole, a second end of the first guide segment is connected to the first end of the second guide segment, and a second end of the second guide segment is connected to the interception cavity. An observation window is provided in the first guide segment, and the connection position between the second end of the first guide segment and the first end of the second guide segment is located between the observation window and the first end of the first guide segment.

[0008] In some embodiments, the temperature of the first guide segment is higher than the temperature of the second guide segment.

[0009] In some embodiments, the first guide section has a first insulation component on its wall, and the second guide section has a second insulation component on its wall.

[0010] In some embodiments, the wall of the first guide segment is provided with a heating assembly.

[0011] In some embodiments, a temperature measuring element is provided in the second guide section.

[0012] In some embodiments, the crystal growth apparatus further includes a processor configured to issue a notification based on a temperature measured by the temperature sensor, the notification indicating that intercepted material is accumulating in the interception box.

[0013] In some embodiments, there are multiple interception boxes, and the multiple interception boxes can be switched to be connected to the flow guide pipe.

[0014] In some embodiments, an air inlet is provided on the wall of the second guide section; the crystal growth apparatus further includes an air inlet assembly configured to supply air to the second guide section through the air inlet during the switching of the interceptor box.

[0015] In some embodiments, the temperature of the air supplied by the intake assembly is lower than the temperature of the first guide section.

[0016] In some embodiments, the portion of the guide tube corresponding to the first guide segment includes an outer tube and an inner tube. The inner tube is disposed on the inner wall of the outer tube and is slidable relative to the outer tube. The observation window is disposed in the inner tube. The outer tube has a first opening that communicates with the second guide segment, and the inner tube has a second opening that communicates with the internal channel. When the interception box is connected to the guide tube, the first opening communicates with the second opening. When the interception box is switched, the inner tube slides relative to the outer tube, and the first opening and the second opening are offset.

[0017] In some embodiments, the crystal growth apparatus further includes a vibrating element configured to drive the interception box to vibrate.

[0018] In some embodiments, the interception box includes a first connector, and the guide pipe includes a second connector. The outer diameter of one of the first connector and the second connector is smaller than the inner diameter of the other. When the interception box is connected to the guide pipe, the first connector and the second connector are connected with a gap.

[0019] In some embodiments, the crystal growth apparatus further includes an elastic connector, which is connected to the interception box and the flow guide tube respectively. The elastic connector includes a hollow channel, with a first end of the hollow channel communicating with the flow guide channel and a second end of the hollow channel communicating with the interception cavity.

[0020] In some embodiments, the crystal growth apparatus further includes a seed crystal rod, a seed crystal holder, and an intercepting net, wherein the intercepting net is disposed between the seed crystal holder and the crucible cover, and the seed crystal rod passes through the intercepting net.

[0021] In some embodiments, the interceptor mesh has a third opening at a position opposite to the guide hole.

[0022] In some embodiments, there are multiple interception boxes connected in series, and a pipe is provided between adjacent interception boxes, the cross-sectional area of ​​the pipe being smaller than that of the interception box.

[0023] In some embodiments, at least the farthest interceptor box is provided with a ventilated plate. Attached Figure Description

[0024] This specification will be further described by way of exemplary embodiments, which will be described in detail with reference to the accompanying drawings. These embodiments are not limiting; in these embodiments, the same reference numerals denote the same structures, wherein:

[0025] Figure 1 is an exemplary structural diagram of a crystal growth apparatus according to some embodiments of this specification;

[0026] Figure 2 is an exemplary structural diagram of an auxiliary component shown according to some embodiments of this specification;

[0027] Figure 3 is an exemplary structural diagram of an auxiliary component shown according to some embodiments of this specification;

[0028] Figure 4 is a schematic diagram of another state of the auxiliary components shown according to some embodiments of this specification;

[0029] Figure 5 is an exemplary structural diagram of a gap connection between a first connector and a second connector according to some embodiments of this specification;

[0030] Figure 6 is another exemplary structural diagram of a crystal growth apparatus according to some embodiments of this specification;

[0031] Figure 7 is an exemplary structural diagram of multiple interceptor boxes connected in series according to some embodiments of this specification. Detailed Implementation

[0032] To more clearly illustrate the technical solutions of the embodiments in this specification, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are merely some examples or embodiments of this specification. For those skilled in the art, these drawings can be applied to other similar scenarios without creative effort. Unless obvious from the context or otherwise specified, the same reference numerals in the drawings represent the same structures or operations.

[0033] It should be understood that the terms “system,” “device,” “unit,” and / or “module” used herein are one way to distinguish different components, elements, parts, sections, or assemblies at different levels. However, if other terms can achieve the same purpose, they may be replaced by other expressions.

[0034] As indicated in this specification and claims, unless the context clearly indicates otherwise, the words "a," "an," "an," and / or "the" do not specifically refer to the singular and may also include the plural. Generally speaking, the terms "comprising" and "including" only indicate the inclusion of expressly identified steps and elements, which do not constitute an exclusive list, and the method or apparatus may also include other steps or elements.

[0035] In some schemes, crystal growth apparatus based on the liquid-phase method typically includes a crucible and a crucible lid. The lid covers the open end of the crucible, which serves as the container for crystal growth. The reactants, after heating, form molten raw materials that enter the crucible and grow crystals on seed crystals within it. During crystal growth, observation windows are typically used to monitor the growth process, and infrared thermography is employed. However, due to significant solvent evaporation during liquid-phase crystal growth, the relatively low temperature near the observation window causes volatiles to deposit, forming deposits that block the window and hinder infrared thermography and monitoring, thus impeding controlled crystal growth.

[0036] To address the aforementioned problems, this specification provides a crystal growth apparatus comprising a crucible, a crucible lid, and auxiliary components. The crucible lid covers the open end of the crucible, and a growth chamber is located within the crucible. A guide hole communicating with the growth chamber is provided on the crucible lid. The auxiliary components communicate with the growth chamber through the guide hole. The auxiliary components include a flow guide tube and an interception box. The interception box contains an interception chamber, and the flow guide tube contains a flow channel. A first end of the flow channel communicates with the guide hole, and a second end communicates with the interception chamber. The temperature within the interception chamber is lower than the temperature within the growth chamber. An observation window is disposed within the flow guide tube. By incorporating the auxiliary components, volatiles within the growth chamber can flow through the guide hole and flow channel into the interception chamber. Due to the lower temperature within the interception chamber, volatiles will deposit within the interception chamber, forming deposits. These deposits are collected within the interception chamber, thus preventing deposits from blocking the observation window. Therefore, continuous monitoring of the crystal growth process and infrared thermography can be achieved throughout the entire crystal growth cycle via the observation window, improving the controllability of crystal growth.

[0037] Figure 1 is an exemplary structural diagram of a crystal growth apparatus according to some embodiments of this specification.

[0038] Referring to Figure 1, the crystal growth apparatus 100 may include a crucible 110, a crucible lid 120, and auxiliary components 130. The crucible 110 serves as a container for crystal growth. Molten raw materials are held in the crucible 110, and the molten raw materials grow a crystal on a seed crystal (e.g., seed crystal rod 150, described later) within the crucible 110. In some embodiments, the crucible 110 may be a hollow structure with an open opening. For example, the crucible 110 may be cylindrical, square, or other feasible shapes. In some embodiments, the crucible 110 may be a graphite crucible, which holds a silicon carbide solution, and the grown crystal is a silicon carbide crystal. In some embodiments, the crucible 110 has a growth chamber 111. The growth chamber 111 refers to a chamber that provides a growth environment for the crystal. In some embodiments, the crystal growth environment may include a thermal field and a protective gas, etc. The protective gas may include, but is not limited to, nitrogen, argon, etc.

[0039] A crucible lid 120 covers the opening of the crucible 110. The crucible lid 120 can be used to maintain the internal environment (e.g., temperature) of the growth chamber 111. In some embodiments, the crucible lid 120 is provided with a guide hole 121 that communicates with the growth chamber 111. The guide hole 121 can be a through-hole in the crucible lid 120. The guide hole 121 is used to mate an auxiliary component 130 (e.g., a flow guide 131 described later) with the growth chamber 111.

[0040] The auxiliary component 130 is used to guide the flow of air and volatiles and to collect volatiles. The auxiliary component 130 is disposed on one side of the crucible lid 120 and is connected to the growth chamber 111 through a guide hole 121. In some embodiments, the auxiliary component 130 may include a guide pipe 131 and an interception box 132. The guide pipe 131 is a conduit used to guide the flow direction of the airflow / volatiles. One end of the guide pipe 131 is fixed to the guide hole 121 (e.g., the wall of the guide hole 121), and the other end of the guide pipe 131 is connected to the interception box 132. In some embodiments, the interception box 132 has an interception cavity 1321 inside, and the guide pipe 131 has a guide channel 1311 inside. The first end of the guide channel 1311 is connected to the guide hole 121, and the second end of the guide channel 1311 is connected to the interception cavity 1321. During crystal growth, the temperature inside the growth chamber 111 is high. Due to the high temperature, the solution inside the growth chamber 111 produces volatiles. When a protective gas is introduced into the growth chamber 111, the volatiles can flow through the guide hole 121 and the guide channel 1311 into the interception chamber 1321 under the influence of the airflow. In some embodiments, the temperature inside the interception chamber 1321 is lower than the temperature inside the growth chamber 111. Due to the lower temperature, the volatiles will deposit in the interception chamber 1321 to form deposits, which are collected in the interception box 132.

[0041] In some embodiments, the volume of the flow channel 1311 can affect the thermal field or temperature change in the growth chamber 111. For example, if the volume of the flow channel 1311 is too large, the airflow in the flow channel 1311 will be large. Excessive airflow flowing out of the growth chamber 111 through the flow channel 1311 will carry away a large amount of heat, resulting in an excessively low temperature inside the growth chamber 111, thus affecting crystal growth. Based on this, the volume of the flow channel 1311 can be reasonably set to ensure that the temperature inside the growth chamber 111 can be continuously maintained within a reasonable range (e.g., 1700°-2200°), thereby ensuring normal crystal growth.

[0042] In some embodiments, when there is excessive sediment in the interception chamber 1321, the interception box 132 needs to be replaced promptly. Therefore, to avoid frequent replacement of the interception box 132, the volume of the interception chamber 1321 can be set to be larger to increase the sediment collection capacity. Furthermore, setting the volume of the interception chamber 1321 to be larger can also facilitate rapid cooling of the airflow and volatiles within the interception chamber 1321, thereby accelerating the deposition of volatiles into sediment. For the above considerations, in some embodiments, the volume of the interception chamber 1321 can be set to be larger than the volume of the flow channel 1311. In some embodiments, the cross-sectional area of ​​the interception chamber 1321 can be set to be larger than the cross-sectional area of ​​the flow channel 1311. The cross-sectional area refers to the area of ​​the cross section perpendicular to the airflow direction.

[0043] In some embodiments, the interception chamber 132 may include a permeable plate. The permeable plate may be a plate made of a material with air permeability. In some embodiments, the permeable plate may be formed from a porous graphite structure. In some embodiments, at least one wall of the interception cavity 1321 is formed by the permeable plate. Taking the interception cavity 1321 as a hexahedron as an example, the interception cavity 1321 has six walls, and one or more of the six walls are formed by the permeable plate. In some embodiments, all walls of the interception cavity 1321 may also be formed by the permeable plate. By setting at least one wall of the interception cavity 1321 to be formed by the permeable plate, the interception chamber 132 can be made air permeable, so that the gas in the growth chamber 111 can enter the interception chamber 132 through the guide channel 1311 and then be discharged outward through the permeable plate. During this process, the gas flow can carry volatiles to the interception chamber 132 and deposit them in the interception chamber 132. In addition, when the gas is discharged outward through the vent plate, it can carry away the heat in the interception cavity 1321, thereby making the temperature inside the interception cavity 1321 lower, which is conducive to the deposition of volatiles in the interception cavity 1321.

[0044] In some embodiments, the porosity of the venting plate can affect the air permeability of the interception box 132. For example, the greater the porosity of the venting plate, the greater the air permeability of the interception box 132; the smaller the porosity of the venting plate, the smaller the air permeability of the interception box 132. In some embodiments, to ensure that the air permeability of the interception box 132 is large enough to ensure that the airflow can carry volatiles to the interception box 132 for deposition, the porosity of the venting plate can be set to be greater than 8%. In some embodiments, if the porosity of the venting plate is too large, the deposits in the interception box 132 will fall to the outside through the pores. Therefore, the porosity of the venting plate can be set to be less than 35%. In some embodiments, to balance the air permeability of the interception box 132 and prevent deposits from falling to the outside through the pores, the porosity of the venting plate can be set to be in the range of 10%-30%. For example, the porosity of the venting plate can be 15%, 18%, 20%, 25%, 28%, 30%, etc.

[0045] In some embodiments, the interception box 132 is detachably connected to the guide pipe 131. When the sediment in the interception box 132 reaches a capacity threshold, the interception box 132 needs to be replaced. By making the interception box 132 detachably connected to the guide pipe 131, the replacement of the interception box 132 can be facilitated, thereby ensuring the continuity of sediment collection. In some embodiments, the capacity threshold can be reasonably set according to needs, for example, when the sediment reaches half the volume of the interception chamber 1321. This specification does not further limit this.

[0046] In some embodiments, the connection between the interception box 132 and the guide pipe 131 may include threaded connection, snap-fit ​​connection, plug-in connection, sleeve connection, or connection through a connector.

[0047] Figure 2 is an exemplary structural diagram of an auxiliary component shown according to some embodiments of this specification.

[0048] Referring to Figures 1 and 2, in some embodiments, the flow channel 1311 may include a first guide segment 13111 and a second guide segment 13112 that are interconnected. The first end of the first guide segment 13111 is connected to the guide hole 121, the second end of the first guide segment 13111 is connected to the first end of the second guide segment 13112, and the second end of the second guide segment 13112 is connected to the interception cavity 1321. In some embodiments, the flow channel 1311 may be bent; for example, the flow tube portion corresponding to the first guide segment 13111 and the flow tube portion corresponding to the second guide segment 13112 are perpendicular. For ease of understanding and description, the flow tube portion corresponding to the first guide segment 13111 can be referred to as the vertical portion of the flow tube (i.e., the first flow tube 132 described later), and the flow tube portion corresponding to the second guide segment 13112 can be referred to as the horizontal portion of the flow tube (i.e., the second flow tube 133 described later). The vertical portion of the flow tube is perpendicular to the plane where the crucible cover 120 is located. The transverse portion of the guide tube is parallel to the plane of the crucible cover 120. In some embodiments, the first end of the vertical portion of the guide tube is connected to the sidewall of the guide hole 121, and the connection method can be threaded connection, plug-in connection, etc. The second end of the vertical portion of the guide tube is connected to the first end of the transverse portion of the guide tube. The second end of the transverse portion of the guide tube is connected to the interception box 132, and the connection method is a detachable connection.

[0049] It should be noted that the first and second ends of the various structures described in this specification (such as the guide tube 131, the guide channel 1311, the first guide section 13111, the second guide section 13112, etc.) are defined according to the airflow direction. The port where the airflow enters is the first end, and the port where the airflow exits is the second end. The airflow direction is from the growth chamber 111 to the interception chamber 1321 (as shown by the dashed arrow in Figure 1).

[0050] In some embodiments, an observation window 140 is provided within the first guide segment 13111, and the connection point between the second end of the first guide segment 13111 and the first end of the second guide segment 13112 is located between the observation window 140 and the first end of the first guide segment 13111. In some embodiments, the guide tube 131 may be inverted T-shaped (T-shaped rotated 90° counterclockwise), having three ports A, B, and C and a connecting port D. Port A is the first end of the first guide segment 13111, connecting port D is the connection point between the second end of the first guide segment 13111 and the first end of the second guide segment 13112, and port C is the second end of the second guide segment 13112. The observation window 140 is located near port B. In this case, the connection point (i.e., connecting port D) is located between the observation window 140 and the first end of the first guide segment 13111 (i.e., port A). In this configuration, the airflow in the growth chamber 111 can enter the interception box 132 via port A - first guide section 13111 - conduction position D - second guide section 13112. The volatiles carried by the airflow are deposited in the interception box 132, instead of being deposited on the surface of the observation window 140.

[0051] In some embodiments, the observation window 140 can be used to monitor the crystal growth process. In some embodiments, the observation window 140 can be a transparent substrate facing the surface of the solution inside the crucible 110, allowing observation of the liquid level. In some embodiments, the growth chamber 111 can be temperature-measured through the observation window 140, for example, using infrared thermometry. In some embodiments, the surface of the observation window 140 can be covered with a thin film that is heat-resistant and does not readily attract deposits, thereby further preventing deposits from adhering to the observation window 140 and ensuring the accuracy of crystal growth monitoring and temperature measurement through the observation window 140. In some embodiments, the material of the thin film can include polymeric materials, such as polytetrafluoroethylene, polyetheretherketone, polyimide, etc.

[0052] In some embodiments, if the distance between the observation window 140 and port B is too small, the temperature near the observation window 140 will be low, and the flowing volatiles may deposit a small amount at the observation window 140, thus affecting the monitoring of crystal growth. Therefore, in some embodiments, the distance h between the observation window 140 and port B can be not less than 5 mm. In some embodiments, the distance h between the observation window 140 and port B can be in the range of 0 mm to 20 mm. For example, the distance h between the observation window 140 and port B can be 2 mm, 5 mm, 8 mm, 10 mm, 13 mm, 15 mm, 18 mm, 20 mm, etc.

[0053] Since volatiles tend to deposit in low-temperature environments, in some embodiments, to prevent volatiles from depositing at the observation window 140, the temperature of the first guide section 13111 can be set higher than the temperature of the second guide section 13112. This arrangement prevents volatiles from depositing at the first guide section 13111 (especially at the observation window 140), thus avoiding interference with monitoring the crystal growth process through the observation window 140. Furthermore, the temperature difference between the first guide section 13111 and the second guide section 13112 promotes airflow, making it easier for volatiles to flow into the interception cavity 1321.

[0054] Figure 3 is an exemplary structural diagram of an auxiliary component shown according to some embodiments of this specification.

[0055] Referring to Figure 3, in some embodiments, the wall of the first guide section 13111 may be provided with a first insulation component 13111-1. The first insulation component 13111-1 wraps around the outside of the wall of the first guide section 13111. The first insulation component 13111-1 has high temperature resistance and good insulation performance. The first insulation component 13111-1 can keep the temperature inside the first guide section 13111. Similarly, the wall of the second guide section 13112 is provided with a second insulation component 13112-1. The second insulation component 13112-1 wraps around the outside of the wall of the second guide section 13112. The second insulation component 13112-1 has high temperature resistance and good insulation performance. The second insulation component 13112-1 can keep the temperature inside the second guide section 13112.

[0056] In some embodiments, the performance parameters of the insulation component can affect the insulation effect. These performance parameters may include thickness, material, etc. For example, a thicker insulation component results in better insulation. Similarly, better thermal insulation properties of the insulation material also lead to better insulation. In some embodiments, the first insulation component 13111-1 and the second insulation component 13112-1 can be differentiated to ensure that the temperature of the first guide segment 13111 is higher than the temperature of the second guide segment 13112. These differentiated settings may include, but are not limited to, thickness settings and material settings. For example, the thickness of the first insulation component 13111-1 can be set to be greater than the thickness of the second insulation component 13112-1 to ensure that the temperature of the first guide segment 13111 is higher than the temperature of the second guide segment 13112. Because graphite has high temperature resistance and good insulation performance, in some embodiments, the insulation component may include graphite soft felt or hard felt.

[0057] Since the first guide section 13111 and the second guide section 13112 are equipped with heat insulation components on their tube walls, while there are no heat insulation components around the interception cavity 1321, the interception cavity 1321 is the area with the lowest temperature in the auxiliary component 130. The gas flow and volatiles flowing out of the growth cavity 111 will be deposited in the interception cavity 1321, forming deposits and storing them in the interception box 132. This ensures that there are no deposits at the observation window 140, so as to ensure the monitoring of crystal growth.

[0058] By setting the first insulation component 13111-1 and the second insulation component 13112-1, the temperature within the flow channel 1311 can be prevented from dropping drastically, thereby reducing the deposition of volatiles within the flow channel 1311 before reaching the interception chamber 1321. Furthermore, by differentiating the first insulation component 13111-1 and the second insulation component 13112-1, a temperature difference can be created between the first guide section 13111 and the second guide section 13112, thereby promoting airflow and making it easier for volatiles to flow into the interception chamber 1321.

[0059] In some embodiments, the outer wall of the crucible 110 may be provided with a third heat-insulating component 180 (as shown in Figure 1), which wraps around the outer wall of the crucible 110. The third heat-insulating component 180 has high temperature resistance and good heat-insulating performance, and can keep the temperature of the growth chamber 111 to ensure the thermal field environment of the growth chamber 111, thereby ensuring the normal growth of the crystal.

[0060] In some embodiments, the tube wall of the first guide segment 13111 is provided with a heating assembly. The heating assembly can heat the first guide segment 13111. In some embodiments, the heating assembly may include a resistance wire wound around the outside of the tube wall of the first guide segment 13111. When current is passed through the resistance wire, the resistance wire can heat the first guide segment 13111. Further, the temperature inside the first guide segment 13111 can be controlled by controlling the magnitude of the current and / or the duration of the current flow (i.e., the temperature of the first guide segment 13111 is controllable). In some embodiments, the heating assembly may include graphite material wrapped around the outside of the tube wall of the first guide segment 13111. Electromagnetic induction can convert high-frequency current into heat, thereby heating the first guide segment 13111. Specifically, high-frequency alternating current generates a rapidly alternating magnetic field through an electromagnet. This magnetic field penetrates the graphite, generating eddy currents inside the graphite. When the induced eddy currents flow through the graphite, they generate heat through Joule heating. In this process, electromagnetic energy can be effectively converted into thermal energy, thereby heating the graphite.

[0061] By setting a heating component in the first guide section 13111, on the one hand, the heating component heats the first guide section 13111, which can increase the temperature inside the first guide section 13111, thereby ensuring that volatiles will not deposit inside the first guide section 13111, thus ensuring the cleanliness and transparency of the observation window 140; on the other hand, the heating component can adjust the temperature of the first guide section 13111 to ensure that the temperature difference between the first guide section 13111 and the growth chamber 111 is not too large, thereby ensuring the thermal environment inside the growth chamber 111.

[0062] In some embodiments, a temperature measuring element is provided within the second guide section 13112. The temperature measuring element is used to measure the temperature of the second guide section 13112. In some embodiments, the temperature measuring element may be located near the second end of the second guide section 13112, so that the temperature measuring element is as close as possible to the interception cavity 1321. This is because volatiles tend to deposit in low-temperature environments. In order to deposit volatiles as much as possible within the interception cavity 1321, the temperature of the interception cavity 1321 needs to be kept relatively low. By placing the temperature measuring element as close as possible to the interception cavity 1321, the temperature measured by the temperature measuring element can better reflect the temperature changes at the location near the interception cavity 1321, thereby facilitating adaptive adjustment of the temperature of the second guide section 13112. For example, if the temperature measuring element is located near the second end of the second guide section 13112 (i.e., the temperature measuring element is close to the interception cavity 1321), and the temperature measured by the temperature measuring element is high, it can be determined that the temperature of the interception cavity 1321 will also be high, which is not conducive to the deposition of volatiles. At this time, the temperature of the second guide section 13112 can be appropriately reduced (for example, by using a heating component to adjust the temperature of the first guide section 13111, thereby reducing the temperature of the second guide section 13112).

[0063] In some embodiments, the temperature measuring device may include, but is not limited to, an infrared thermometer, a thermocouple, a resistance temperature detector, etc.

[0064] In some embodiments, the crystal growth apparatus 100 may further include a processor configured to issue a warning message based on the temperature measured by a temperature sensor, indicating that intercepted material has accumulated in the interception box 132. In some embodiments, the temperature measured by the temperature sensor can reflect the accumulation of intercepted material in the interception box 132. The intercepted material is a deposit formed by the deposition of volatiles. When the intercepted material accumulates in the interception box 132, it can block the vent plate of the interception cavity 1321, resulting in poor heat dissipation of the interception box 132. This leads to a gradual increase in the temperature of the interception cavity 1321, which in turn causes a gradual increase in the temperature of the second guide section 13112. Excessive temperature in the second guide section 13112 can cause partial deposition of volatiles at the observation window 140, affecting the monitoring of crystal growth. Therefore, a temperature threshold can be set. When the temperature measured by the temperature sensor is higher than the temperature threshold, it can be determined that the intercepted material in the interception box 132 has accumulated, and at this time, the processor can issue a warning message.

[0065] In some embodiments, the prompting information may include voice messages, light signals, vibration signals, etc. After the processor issues the prompting information, the operator can promptly replace the interceptor box 132.

[0066] In some embodiments, the temperature threshold can be obtained through historical data or experimental methods. In some embodiments, the temperature threshold can be a percentage of the temperature of the growth chamber 111. For example, the temperature threshold can be set to 10%-20% of the temperature of the growth chamber 111.

[0067] By setting up a processor, the processor can issue a prompt based on the temperature measured by the temperature sensor, which can promptly indicate the accumulation in the interception box 132, thereby ensuring that the interception box 132 can be replaced in a timely manner, thus preventing the accumulation of intercepted material and the deposition of volatiles at the observation window 140.

[0068] In some embodiments, there may be multiple interception boxes 132, and multiple interception boxes 132 can be switched to the flow guide pipe 131. When the processor issues a prompt message or when an excessive amount of sediment is observed in the interception box 132, the interception box 132 can be switched.

[0069] In some embodiments, the switchable connection between multiple interception boxes 132 and the guide pipe 131 can be achieved by the following method: multiple interception boxes 132 can be arranged on a turntable and distributed at intervals along the circumference of the turntable, with one interception box 132 connected to the guide pipe 131, while the other interception boxes 132 are in a non-connected state. When it is necessary to replace the interception box 132, the connection between the guide pipe 131 and the current interception box 132 (i.e., the interception box that has been clogged) can be disconnected first. Then, by rotating the turntable, the current interception box 132 is moved away from the guide pipe 131, the new interception box 132 reaches the installation position, and the new interception box 132 is reconnected to the guide pipe 131, thereby realizing the switching of the interception box 132. In some embodiments, the rotation of the turntable can be achieved manually, i.e., manually rotating the turntable. In some embodiments, the rotation of the turntable can be achieved electrically. For example, the turntable may include a turntable drive motor, and the processor controls the turntable drive motor to drive the turntable to rotate.

[0070] In some embodiments, the switchable connection between multiple interception boxes 132 and the guide pipe 131 can also be achieved by the following method: multiple interception boxes 132 are arranged on a conveyor belt (e.g., a linear conveyor belt) and spaced apart along the conveying direction of the conveyor belt, with one interception box connected to the guide pipe 131, while the other interception boxes 132 are in a disconnected state. When it is necessary to replace the interception box 132, the connection between the guide pipe 131 and the current interception box 132 (i.e., the interception box that has accumulated silt) can be disconnected first, and then the conveyor belt can be driven to move linearly so that the current interception box 132 leaves the guide pipe 131, the new interception box 132 reaches the installation position, and the new interception box 132 is reconnected to the guide pipe 131, thereby realizing the switching of the interception box 132. In some embodiments, the movement of the conveyor belt can be achieved manually. In some embodiments, the movement of the conveyor belt can be achieved electrically. For example, the conveyor belt may include a conveyor belt drive motor, and the processor controls the conveyor belt drive motor to drive the conveyor belt to move linearly.

[0071] It is understood that when there are multiple interception boxes 132, each interception box 132 is detachably connected to the guide pipe 131 (e.g., threaded connection), which will not be elaborated further.

[0072] By setting up multiple interception boxes 132 that can be switched and connected to the diversion pipe 131, the interception boxes that have accumulated silt can be replaced in a timely manner, and the replacement process is more convenient. In addition, replacing the interception boxes 132 electrically can reduce manual operation and automate the replacement of the interception boxes 132.

[0073] In some embodiments, during the replacement of the interceptor box 132, the second end of the second guide section 13112 is directly connected to the outside, which can cause airflow and volatiles to be discharged into the outside, resulting in environmental pollution. Therefore, to prevent airflow and volatiles from being discharged into the outside during the replacement of the interceptor box 132, an air inlet can be provided on the wall of the second guide section 13112. Simultaneously, the crystal growth apparatus 100 also includes an air intake assembly configured to supply air to the second guide section 13112 through the air inlet during the switching of the interceptor box 132. When the air intake assembly supplies air to the second guide section 13112 through the air inlet, the supplied airflow forms a convection with the airflow flowing out of the growth chamber 111, or the supplied airflow cuts off the airflow flowing out of the growth chamber 111. This prevents the airflow and volatiles flowing out of the growth chamber 111 from being discharged from the second end of the second guide section 13112, thus achieving a "sealing" effect.

[0074] In some embodiments, the air intake assembly supplies air to the second guide section 13112 through an air intake port. The air intake direction can be perpendicular to the airflow direction (airflow discharged from the growth chamber 111) within the second guide section 13112. In this case, the airflow supplied through the air intake port can block the airflow flowing out of the growth chamber 111, thereby achieving a "sealing" effect. In some embodiments, the air intake direction can be opposite to the airflow direction (airflow discharged from the growth chamber 111) within the second guide section 13112. In this case, the supplied airflow and the airflow flowing out of the growth chamber 111 form a convection, thereby achieving a "sealing" effect. In some embodiments, the air intake assembly may include an air pump.

[0075] In some embodiments, the air inlet can be located on the second guide section 13112 near the second end. On the one hand, it can intercept more airflow and volatiles flowing out of the growth chamber 111. On the other hand, during replacement, volatiles may deposit in the second guide section 13112. Most of the deposits fall near the air inlet, and the air inlet is close to the port, which facilitates cleaning later.

[0076] In some embodiments, multiple air inlets can be provided, and the multiple air inlets are spaced apart along the length direction of the second guide section 13112. The air intake assembly can supply air to the second guide section 13112 through each air inlet. At this time, each air inlet can achieve a similar "sealing" function, which can further prevent the airflow and volatiles flowing out of the growth chamber 111 from being discharged from the second end of the second guide section 13112.

[0077] In some embodiments, the temperature of the air supplied by the air intake assembly is lower than the temperature of the first guide section 13111 to prevent volatiles from depositing in the first guide section 13111, thereby ensuring the cleanliness of the surface of the observation window 140.

[0078] In some embodiments, when switching the interception box 132, in order to prevent the airflow and volatiles in the growth chamber 111 from being discharged to the outside from the second end of the second guide section 13112, the structure of the guide tube portion corresponding to the first guide section 13111 can be configured so that the airflow and volatiles in the first guide section 13111 cannot flow to the second guide section 13112 during the switching process. For example, during the switching of the interception box 132, the connection between the first guide section 13111 and the second guide section 13112 is cut off (i.e., the first guide section 13111 and the second guide section 13112 are in a non-conductive state), and after the switching is completed, the first guide section 13111 and the second guide section 13112 are restored to a conductive state.

[0079] In some embodiments, referring to FIG2, the guide tube 131 may include a first guide tube 132 and a second guide tube 133, wherein the first guide tube 132 is the guide tube portion corresponding to the first guide channel 13111, and the second guide tube 133 is the guide tube portion corresponding to the second guide channel 13112. A first end of the first guide tube 132 is connected to the sidewall of the guide hole 121. A second end of the first guide tube 132 is connected to the first end of the second guide tube 133. A second end of the second guide tube 133 is connected to the interception box 132.

[0080] In some embodiments, the first guide tube 132 may include an outer tube 1321 and an inner tube 1322. The inner tube 1322 is disposed on the inner wall of the outer tube 1321 and is slidable relative to the outer tube 1321. The outer tube 1321 is provided with a first opening 13211 that communicates with the second guide section 13112, and the inner tube 1322 is provided with a second opening 13221 that communicates with the internal channel. When the interception box 132 is connected to the second guide tube 132 of the guide tube 131, the first opening 13211 and the second opening 13221 are connected. When the interception box 132 is switched, the inner tube 1322 slides relative to the outer tube 1321, and the first opening 13211 and the second opening 13221 are offset.

[0081] Figure 4 is another schematic diagram of the auxiliary components shown according to some embodiments of this specification.

[0082] In some embodiments, when the interception box 132 is connected to the second guide pipe 132, as shown in FIG2, the first opening 13211 and the second opening 13221 are connected, and the first guide section 13111 and the second guide section 13112 are in a connected state through the first opening 13211 and the second opening 13221. At this time, the airflow and volatiles in the growth chamber 111 can reach the interception chamber 1321 through the first guide section 13111 and the second guide section 13112. When the interception box 132 is switched, as shown in FIG4, the inner tube 1322 slides relative to the outer tube 1321, the first opening 13211 and the second opening 13221 are misaligned, and the first guide section 13111 and the second guide section 13112 are in a non-connected state. At this time, the airflow and volatiles in the growth chamber 111 cannot reach the second guide section 13112.

[0083] In some embodiments, the observation window 140 may be disposed on the inner tube 1322. In order to prevent the airflow and volatiles from depositing in the first guide section 13111, especially at the observation window 140, the first guide section 13111 may be heated by a heating assembly to maintain the temperature of the first guide section 13111.

[0084] In some embodiments, the inner tube 1322 and the outer tube 1321 are coaxial, and the inner tube 1322 slides relative to the outer tube 1321. The sliding direction can be up and down along the axial direction. For example, as shown in FIG4, when replacing the interception box 132, the inner tube 1322 slides downward (near the crucible 110) relative to the outer tube 1321, and the first opening 13211 and the second opening 13221 are offset along the axial direction. In some embodiments, the inner wall of the outer tube 1321 can be provided with a guide rail along the axial direction, and the outer wall of the inner tube 1322 is provided with a sliding groove that cooperates with the guide rail. The inner tube 1322 can slide relative to the outer tube 1321 along the axial direction using the guide rail and the sliding groove.

[0085] In some embodiments, the inner tube 1322 and the outer tube 1321 are coaxial, and the inner tube 1322 slides relative to the outer tube 1321, which can be achieved by rotating the inner tube 1322 relative to the outer tube 1321 about the axial direction. For example, when replacing the interceptor box 132, the inner tube 1322 rotates relative to the outer tube 1321 about the axial direction by a specific angle clockwise or counterclockwise, so that the first opening 13211 and the second opening 13221 are offset circumferentially. In some embodiments, the inner wall of the outer tube 1321 can be provided with a guide rail in the circumferential direction, and the outer wall of the inner tube 1322 is provided with a sliding groove that cooperates with the guide rail. The guide rail and the sliding groove can be used to realize the rotation of the inner tube 1322 relative to the outer tube 1321 about the axial direction.

[0086] By making the inner tube 1322 slidable relative to the outer tube 1321, the state (conducting or offset) of the first opening 13211 on the outer tube 1321 and the second opening 13221 on the inner tube 1322 can be adjusted. This allows the airflow and volatiles in the growth chamber 111 to be confined to the first guide channel 13111 when the interception box 132 is replaced, thereby preventing the airflow and volatiles from being discharged to the outside.

[0087] In some embodiments, the crystal growth apparatus 100 may further include a vibrating element configured to drive the interception chamber 132 to vibrate. In some embodiments, volatiles deposit within the interception chamber 1321, and the deposits can block the vent plate of the interception chamber 1321, preventing airflow from escaping through the vent plate. This results in poor heat dissipation of the interception chamber 1321, causing its temperature to gradually rise, which is detrimental to volatile deposition. In this case, to ensure the heat dissipation capacity of the interception chamber 1321, the interception chamber 132 needs to be replaced. However, in some cases, although the deposits block the vent plate, the amount of deposits does not reach the capacity threshold. In this case, the vibrating element can drive the interception chamber 132 to vibrate, causing the deposits on the vent plate to fall into the interception chamber 1321, thereby restoring the permeability of the vent plate.

[0088] By setting a vibrating element to drive the interception box 132 to vibrate, the interception box 132 can regain some air permeability, thereby extending the service life of the interception box 132 and reducing the replacement frequency.

[0089] In some embodiments, the interceptor box 132 may include a first connector, and the guide pipe 131 may include a second connector. The outer diameter of one of the first and second connectors is smaller than the inner diameter of the other. When the interceptor box 132 is connected to the guide pipe 131, the first and second connectors are connected with a gap. In some embodiments, the first connector is located at the inlet of the airflow in the interceptor box 132 and is used to connect the interceptor box 132 to the guide pipe 131. The second connector is located at the end of the second end of the second guide pipe 133 (i.e., at the airflow outlet of the second guide pipe 133) and is used to connect the guide pipe 131 to the interceptor box 132.

[0090] In some embodiments, the outer diameter of the first connector on the interceptor box 132 may be smaller than the inner diameter of the second connector on the guide pipe 131. When the interceptor box 132 and the guide pipe 131 are connected through the first connector and the second connector, the first connector on the interceptor box 132 is inserted into the second connector on the guide pipe 131, achieving a gap connection between the interceptor box 132 and the guide pipe 131. In some embodiments, the outer diameter of the second connector on the guide pipe 131 may be smaller than the inner diameter of the first connector on the interceptor box 132. When the interceptor box 132 and the guide pipe 131 are connected through the first connector and the second connector, the second connector on the guide pipe 131 is inserted into the first connector on the interceptor box 132, achieving a gap connection between the interceptor box 132 and the guide pipe 131.

[0091] Because the outer diameter of one of the first and second connectors is smaller than the inner diameter of the other, a certain gap exists when the two connectors are joined. This gap provides vibration space for the interception box 132, preventing damage during vibration. In some embodiments, to ensure sufficient vibration space for the interception box 132, the gap between the two connectors can be greater than 0.3 mm. In some embodiments, to prevent airflow and volatiles from leaking into the external environment through the gap between the two connectors, the gap can be set smaller. For example, the gap between the two connectors can be less than 1.3 mm. In some embodiments, to balance the vibration space of the interception box 132 with preventing airflow and volatiles from leaking into the external environment through the gap, the gap between the two connectors can be set within the range of 0.5 mm to 1 mm. For example, the gap between the two connectors can be 0.5 mm, 0.7 mm, 0.8 mm, 1 mm, etc.

[0092] The gap between the two connectors can be the distance between the inner ring side of the larger connector and the outer ring side of the smaller connector. Figure 5 is an exemplary structural diagram of a gap connection between the first connector and the second connector according to some embodiments of this specification. Taking the first connector 1322 and the second connector 131-1 shown in Figure 5 as an example, both are annular connectors, and the inner diameter r1 of the first connector 1322 is larger than the outer diameter r2 of the second connector 131-1, there is a gap d between the first connector 1322 and the second connector 131-1, and the value of the gap d is the difference between r1 and r2.

[0093] In some embodiments, the crystal growth apparatus 100 may further include an elastic connector, which is connected to the interception box 132 and the guide tube 131 respectively. The elastic connector includes a hollow channel, with the first end of the hollow channel communicating with the guide channel 1311 and the second end of the hollow channel communicating with the interception cavity 1321.

[0094] In some embodiments, the second end of the second guide tube 133 of the guide tube 131 is connected to one end of the elastic connector, and the other end of the elastic connector is connected to the interception box 132. That is, the second guide tube 133 and the interception box 132 are connected by the elastic connector.

[0095] In some embodiments, the elastic connector may be an internally hollow elastic structure, with the internal hollow portion serving as a hollow channel that connects the second flow channel 13112 and the interception cavity 1321.

[0096] In some embodiments, the resilient connector can be made of a material that has high temperature resistance and good elasticity. For example, the resilient connector can be formed from flexible graphite paper.

[0097] The interception box 132 and the guide pipe 131 are connected by an elastic connector. When the interception box 132 vibrates, the elastic connector acts as a buffer to ensure that the interception box 132 and the guide pipe 131 are not damaged.

[0098] Figure 6 is another exemplary structural diagram of a crystal growth apparatus according to some embodiments of this specification. Referring to Figures 1 and 6, the crystal growth apparatus 100 further includes a seed crystal rod 150, a seed crystal holder 160, and a blocking net 170, the blocking net 170 being disposed between the seed crystal holder 160 and the crucible cover 120, and the seed crystal rod 150 passing through the blocking net 170.

[0099] The seed crystal rod 150 is a rod-shaped object used to fix the seed crystal during crystal growth. In some embodiments, as shown in FIG6, a portion of the seed crystal rod 150 is located in the growth chamber 111, with the end located in the growth chamber 111 fixed to the seed crystal holder 160, and the other portion of the seed crystal rod 150 passing through the crucible cover 120 and located outside the device. In some embodiments, during crystal growth, the crystal growth can be controlled by adjusting the lifting and / or rotation rate of the seed crystal rod 150.

[0100] The seed crystal holder 160 is located in the growth chamber 111. The seed crystal holder 160 is a support structure for fixing the seed crystal rod 150. The seed crystal holder 160 is disposed at the lower end of the seed crystal rod 150 to ensure that the seed crystal rod 150 is held in the appropriate position and orientation. In some embodiments, the seed crystal holder 160 has a seed crystal bonding surface. The seed crystal bonding surface can be used to bond the seed crystal rod 150. In some embodiments, the seed crystal holder 160 can be made of graphite. The seed crystal rod 150 can be bonded to the seed crystal bonding surface of the seed crystal holder 160 under certain conditions (e.g., vacuum, heating, etc.). During crystal growth, the seed crystal on the seed crystal bonding surface can come into contact with the melt in the crucible 110. The solute in the melt adsorbs onto the surface of the seed crystal and grows along the crystal lattice of the seed crystal to form a new crystal. In some embodiments, the seed crystal holder 160 can be configured as a columnar, frustum-shaped, or other feasible shapes.

[0101] An interceptor mesh 170 is disposed between the seed crystal holder 160 and the crucible lid 120, and the interceptor mesh 170 is connected to the inner wall of the crucible 110 via its periphery. In some embodiments, the interceptor mesh 170 may be parallel to the crucible lid 120 (as shown in Figure 6). In some embodiments, the interceptor mesh 170 may also have a certain slope, and the interceptor mesh 170 and the crucible lid 120 may form a certain angle; however, this embodiment does not specifically limit this aspect.

[0102] In some embodiments, the interceptor 170 may be a mesh structure. During crystal growth, the temperature at the crucible lid 120 is slightly lower than the temperature of the growth chamber 111. Therefore, a small amount of volatiles may deposit at the crucible lid 120 to form deposits. By setting the interceptor 170, the interceptor 170 can prevent the deposits on the crucible lid 120 from falling into the raw material area. In some embodiments, during the switching of the interceptor box 132, some volatiles may not reach the interceptor box 132. These volatiles may deposit at other locations, such as the first flow channel 13111, to form deposits. By setting the interceptor 170, the interceptor 170 can prevent these deposits from falling into the raw material area.

[0103] In some embodiments, a third opening 171 may be provided on the interceptor mesh 170 at a position opposite to the guide hole 121. By providing the third opening 171, the interceptor mesh 170 can be prevented from obstructing the monitoring of crystal growth through the observation window 140, for example, visual observation of the liquid surface or infrared thermometry.

[0104] In some embodiments, there are multiple interception boxes 132, which can be connected in series. Pipes are provided between adjacent interception boxes 132, and the flow area of ​​the pipes is smaller than the flow area of ​​the interception boxes 132.

[0105] Figure 7 is an exemplary structural diagram of multiple interceptor boxes connected in series according to some embodiments of this specification. Taking the example of three interceptor boxes shown in Figure 7, namely interceptor box 132-1, interceptor box 132-2, and interceptor box 132-3, the three interceptor boxes are connected in series, and a pipe 135 is provided between adjacent interceptor boxes. For example, interceptor box 132-1 and interceptor box 132-2 are connected by pipe 1351; interceptor box 132-2 and interceptor box 132-3 are connected by pipe 1352.

[0106] In some embodiments, interception box 132-1 contains interception cavity 132-11, interception box 132-2 contains interception cavity 132-21, and interception box 132-3 contains interception cavity 132-31. The second flow channel 13112, interception cavity 132-11, pipe 1351, interception cavity 132-21, pipe 1352, and interception cavity 132-31 are sequentially connected. In this configuration, volatiles can be deposited in each interception cavity, allowing for greater volatile deposition and ensuring no deposits are formed at the observation window 140, thus improving the interception effect of the interception box. Furthermore, by connecting multiple interception boxes in series, the interception box can hold more deposits, increasing the amount of volatiles intercepted.

[0107] In some embodiments, the cross-sectional area of ​​the pipe 135 may be smaller than the cross-sectional area of ​​the interception box 132. In this configuration, the pipe 135 has a relatively small cross-sectional area, and the gas flows at a relatively fast velocity within the pipe 135. The interception box has a relatively large cross-sectional area, and the flow velocity slows down when the gas flows from the pipe 135 to the interception box 132. This effectively promotes the entry of volatiles into the interception chamber, where they are deposited and collected by the interception box.

[0108] In some embodiments, the pipe wall of the pipe 135 may be provided with a heating component to heat the pipe 135 so that the temperature of the pipe 135 is higher than the temperature of the interception chamber 1321. This makes it difficult for volatiles to deposit in the pipe 135, but instead causes them to deposit in the lower-temperature interception chamber 1321, thus facilitating the collection of deposits using the interception chamber. In some embodiments, the heating component may include a resistance wire, graphite material, etc. For details regarding the heating component, please refer to the relevant description above, which will not be repeated here.

[0109] In some embodiments, when multiple interceptor boxes are connected in series, at least the farthest interceptor box is equipped with a vent plate. The farthest interceptor box refers to the interceptor box that is furthest from the second flow channel. Taking the three interceptor boxes connected in series as shown in Figure 7 as an example, the farthest interceptor box is interceptor box 132-3.

[0110] In some embodiments, at least one wall of the farthest interceptor box is formed by a venting plate. The venting plate enables the farthest interceptor box to be permeable, allowing gas in the growth chamber 111 to enter the farthest interceptor box via the guide channel 1311, each interceptor box, and the pipe, and then be discharged outward through the venting plate. On the one hand, the gas flow can carry volatiles to each interceptor box, where they can be deposited or partially deposited, improving the interception effect; on the other hand, the venting plate can also ensure that the temperature of the interceptor box does not rise due to gas accumulation.

[0111] In some embodiments, at least one wall of each of the multiple interception boxes connected in series is composed of a permeable plate. In this configuration, each interception box is permeable, which increases the gas flow rate, allowing more airflow and volatiles to reach the interception box and improving the collection efficiency of sediments.

[0112] It should be noted that the number of interceptor boxes connected in series can be set according to actual needs, and this manual does not impose a specific limit on this.

[0113] The basic concepts have been described above. It is clear that the detailed disclosure above is merely illustrative and does not constitute a limitation of this specification. Although not explicitly stated herein, various modifications, improvements, and corrections may be made to this specification by those skilled in the art. Such modifications, improvements, and corrections are suggested in this specification and therefore remain within the spirit and scope of the exemplary embodiments described herein.

[0114] Furthermore, this specification uses specific terms to describe embodiments thereof. For example, "an embodiment," "one embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic associated with at least one embodiment of this specification. Therefore, it should be emphasized and noted that references to "an embodiment," "one embodiment," or "an alternative embodiment" in different locations throughout this specification do not necessarily refer to the same embodiment. Moreover, certain features, structures, or characteristics in one or more embodiments of this specification can be appropriately combined.

[0115] Furthermore, unless expressly stated in the claims, the order of processing elements and sequences, the use of numbers and letters, or other names described in this specification are not intended to limit the order of the processes and methods described herein. Although various examples have been discussed in the foregoing disclosure of some embodiments of the invention that are currently considered useful, it should be understood that such details are for illustrative purposes only, and the appended claims are not limited to the disclosed embodiments; rather, the claims are intended to cover all modifications and equivalent combinations that conform to the spirit and scope of the embodiments described herein. For example, while the system components described above can be implemented using hardware devices, they can also be implemented solely using software solutions, such as installing the described system on existing servers or mobile devices.

[0116] Similarly, it should be noted that, in order to simplify the description disclosed herein and thus aid in the understanding of one or more embodiments of the invention, the foregoing description of embodiments in this specification may sometimes combine multiple features into a single embodiment, drawing, or description thereof. However, this method of disclosure does not imply that the subject matter of this specification requires more features than those mentioned in the claims. In fact, the embodiments contain fewer features than all the features of a single embodiment disclosed above.

[0117] In some embodiments, numbers describing the quantity of components and attributes are used. It should be understood that such numbers used in the description of embodiments are modified in some examples with the terms "approximately," "approximately," or "generally." Unless otherwise stated, "approximately," "approximately," or "generally" indicates that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may be changed depending on the characteristics required by individual embodiments. In some embodiments, numerical parameters should take into account specified significant digits and employ a general method of digit reservation. Although the numerical ranges and parameters used to confirm their breadth of range in some embodiments of this specification are approximate values, in specific embodiments, such values ​​are set as precisely as feasible.

[0118] For each patent, patent application, patent application publication, and other material, such as articles, books, specifications, publications, and documents, referenced in this specification, the entire contents of which are incorporated herein by reference. This excludes historical application documents that are inconsistent with or conflict with the content of this specification, as well as documents that limit the broadest scope of the claims in this specification (currently or subsequently appended to this specification). It should be noted that in the event of any inconsistency or conflict between the descriptions, definitions, and / or terminology used in the supplementary materials to this specification and the content of this specification, the descriptions, definitions, and / or terminology used in this specification shall prevail.

[0119] Finally, it should be understood that the embodiments described in this specification are merely illustrative of the principles of the embodiments described herein. Other variations may also fall within the scope of this specification. Therefore, alternative configurations of the embodiments described herein are intended to be illustrative rather than limiting, and should be considered consistent with the teachings of this specification. Accordingly, the embodiments described herein are not limited to those explicitly introduced and described herein.

Claims

A crystal growth apparatus, comprising: A crucible, wherein a growth chamber is provided inside the crucible; A crucible lid, wherein a guide hole is provided on the crucible lid, and the guide hole is in communication with the growth chamber; as well as The auxiliary components include: a flow guide tube and an interception box. The interception box has an interception cavity inside, and the flow guide tube has a flow guide channel inside. The first end of the flow guide channel is connected to the guide hole, and the second end of the flow guide channel is connected to the interception cavity. The temperature inside the interception cavity is lower than the temperature inside the growth cavity. According to claim 1, the crystal growth apparatus, wherein, The interception box includes a ventilated plate, and at least one wall of the interception cavity is formed by the ventilated plate. According to claim 1, the crystal growth apparatus, wherein, The interceptor box is detachably connected to the guide pipe. According to claim 1, the crystal growth apparatus, wherein, The flow channel includes a first guide section and a second guide section that are interconnected. The first end of the first guide section is connected to the guide hole, the second end of the first guide section is connected to the first end of the second guide section, and the second end of the second guide section is connected to the interception cavity. An observation window is provided in the first guide section, and the connection position between the second end of the first guide section and the first end of the second guide section is located between the observation window and the first end of the first guide section. The crystal growth apparatus according to claim 4, wherein, The temperature of the first guide segment is higher than the temperature of the second guide segment. According to claim 5, the crystal growth apparatus, wherein, The first guide section has a first insulation component on its pipe wall, and the second guide section has a second insulation component on its pipe wall. According to claim 5, the crystal growth apparatus, wherein, The first guide section has a heating element installed on its pipe wall. The crystal growth apparatus according to claim 4, wherein, The second guide section is equipped with a temperature measuring element. The crystal growth apparatus according to claim 8, wherein, The crystal growth apparatus also includes a processor configured to issue a prompt message based on the temperature measured by the temperature sensor, the prompt message indicating that intercepted material is accumulating in the interception box. The crystal growth apparatus according to claim 8 or 9, wherein, There are multiple interception boxes, and the multiple interception boxes can be switched to be connected to the flow guide pipe. The crystal growth apparatus according to claim 10, wherein, The second guide section has an air inlet hole on its tube wall; the crystal growth apparatus also includes an air inlet assembly, which is configured to supply air to the second guide section through the air inlet hole during the switching of the interceptor box. The crystal growth apparatus according to claim 11, wherein, The temperature of the air supplied by the intake assembly is lower than the temperature of the first guide section. The crystal growth apparatus according to claim 10, wherein, The portion of the guide tube corresponding to the first guide section includes an outer tube and an inner tube. The inner tube is disposed on the inner wall of the outer tube and is slidable relative to the outer tube. The observation window is disposed in the inner tube. The outer tube has a first opening that communicates with the second guide section, and the inner tube has a second opening that communicates with the internal channel. When the interception box is connected to the guide pipe, the first opening and the second opening are connected. When the interception box is switched, the inner tube slides relative to the outer tube, and the first opening is offset from the second opening. The crystal growth apparatus according to claim 8 or 9, wherein, The crystal growth apparatus also includes a vibrating element configured to drive the interception box to vibrate. The crystal growth apparatus according to claim 14, wherein, The interception box includes a first connector, and the guide pipe includes a second connector. The outer diameter of one of the first connector and the second connector is smaller than the inner diameter of the other. When the interception box is connected to the guide pipe, the first connector and the second connector are connected with a gap. The crystal growth apparatus according to claim 14, wherein, The crystal growth apparatus further includes an elastic connector, which is connected to the interception box and the flow guide tube respectively. The elastic connector includes a hollow channel, with a first end of the hollow channel communicating with the flow guide channel and a second end of the hollow channel communicating with the interception cavity. The crystal growth apparatus according to any one of claims 1-16, wherein, The crystal growth apparatus further includes a seed crystal rod, a seed crystal holder, and an intercepting net. The intercepting net is disposed between the seed crystal holder and the crucible cover, and the seed crystal rod passes through the intercepting net. The crystal growth apparatus according to claim 17, wherein, The interceptor mesh has a third opening at a position opposite to the guide hole. According to claim 1, the crystal growth apparatus, wherein, There are multiple interception boxes, which are connected in series. A pipe is provided between adjacent interception boxes, and the cross-sectional area of ​​the pipe is smaller than that of the interception box. The crystal growth apparatus according to claim 19, wherein, At least the farthest of the interceptor boxes is equipped with a ventilated panel.

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