Heat dissipation structure and photoelectric packaging system

Abstract

A heat dissipation structure and a photoelectric packaging system. The heat dissipation structure (10) comprises: a heat exchange member (200) comprising: a heat exchange portion (210) configured to be in contact with one or more first chips (50) and extending in a first direction, wherein a heat exchange cavity (211) is provided in the heat exchange portion; and one or more heat conduction portions (220) arranged on the side of the heat exchange portion facing away from the one or more first chips and extending in a second direction, wherein a heat conduction cavity (221) is provided in the one or more heat conduction portions, and the heat conduction cavity is in communication with the heat exchange cavity; and wherein a working medium is provided in the heat exchange member for heat exchange, and the first direction and the second direction are not parallel to each other.

Description

Heat dissipation structure and optoelectronic packaging system

[0001] Cross-reference of related applications

[0002] This application claims priority to Chinese Patent Application No. 202520329806.9, filed on February 27, 2025, entitled "Heat Dissipation Mechanism and Photoelectric Sealing System", the entire contents of which are incorporated herein by reference. Technical Field

[0003] This application relates to the field of optoelectronic packaging technology, and in particular to a heat dissipation structure and optoelectronic packaging system. Background Technology

[0004] With the continuous increase in global data throughput, the demand for data center switching capacity is increasing. As an important module for data transmission, optical modules have undergone technological development from 10G to 400G. However, hot-swappable optical modules have reached their limit after exceeding 400G. Co-packaged Optics (CPO) is expected to replace hot-swappable forms as the next generation of technology for data switching.

[0005] In related technologies, optoelectronic co-packaging technology integrates the switching chip and optical engine structure onto the same substrate, reducing the interconnection distance between the switching chip and the optical engine structure to achieve high-speed signal transmission and low system power consumption. However, in CPO technology, continuously reducing the interconnection distance between the ASIC switching chip and the optical engine, or integrating them onto the same substrate, inevitably leads to thermal crosstalk problems, especially since optical chips are highly sensitive to temperature. Furthermore, due to the integration of numerous electrical chips, the overall power consumption of the optoelectronic co-packaging system can reach the kilowatt level, thus necessitating a solution to thermal management issues.

[0006] In related technologies, heat sinks are used to dissipate heat from the heated ASIC switching chip and multiple optical engines to varying degrees. However, the heat sink's heat dissipation effect is poor, its internal thermal resistance is high, and it cannot provide the same level of heat dissipation to each optical engine. Summary of the Invention

[0007] Each exemplary embodiment of this application provides a heat dissipation structure, including:

[0008] A heat exchanger includes: a heat exchange section for contacting one or more first chips and extending along a first direction, wherein the heat exchange section has a heat exchange cavity; and

[0009] One or more heat-conducting portions are disposed on the side of the heat exchange portion opposite to the one or more first chips and extend in a second direction, wherein the one or more heat-conducting portions have a heat-conducting cavity that communicates with the heat exchange cavity; and

[0010] The heat exchanger contains a working medium for heat exchange, and the first direction and the second direction are not parallel to each other.

[0011] In one embodiment, the second direction is parallel to the direction of gravity of the working medium.

[0012] In one embodiment, the heat-conducting cavity and the heat-exchange cavity are configured as a vacuum chamber.

[0013] In one embodiment, the heat exchanger is made of any one of copper, aluminum, or stainless steel.

[0014] In one embodiment, the heat dissipation structure includes a liquid-absorbing layer disposed within the heat dissipation structure, the liquid-absorbing layer including a first liquid-absorbing layer, the first liquid-absorbing layer being located within the heat-conducting cavity, and the first liquid-absorbing layer covering the cavity wall of the heat-conducting cavity;

[0015] The first liquid-absorbing layer forms a heat-conducting channel on the side away from the cavity wall of the heat-conducting cavity.

[0016] In one embodiment, the first absorbing layer is provided with a capillary structure, which is configured to transfer the working medium that is in contact with the side of the first absorbing layer opposite to the cavity wall of the heat-conducting cavity back to the heat exchange cavity.

[0017] In one embodiment, the liquid-absorbing layer includes a second liquid-absorbing layer located inside the heat exchange cavity and covering the cavity wall of the heat exchange cavity;

[0018] The second liquid-absorbing layer forms a heat exchange chamber on the side away from the cavity wall of the heat exchange chamber, the working medium is located in the heat exchange chamber, and the heat exchange chamber is connected to the heat conduction channel.

[0019] In one embodiment, the plurality of heat-conducting portions are arranged at intervals along the first direction.

[0020] In one embodiment, the heat dissipation structure includes one or more sets of first heat dissipation components, which are disposed on the heat-conducting part.

[0021] In one embodiment, the heat exchange section is provided with a contact area for contacting the first chip, and the center of the contact area is equidistant from the opposite sides of the heat exchange section along the first direction.

[0022] In one embodiment, the heat exchanger includes a plurality of heat dissipation portions, and at least one of the heat dissipation portions is provided on the heat conduction portion. The heat dissipation portion has a heat dissipation cavity, and the heat dissipation cavity is in communication with the heat conduction cavity.

[0023] In one embodiment, the heat dissipation structure includes one or more sets of second heat dissipation components, which are used to contact the second chip and dissipate heat from the second chip.

[0024] In this embodiment, the heat dissipation structure has a heat exchange section on the side away from the heat conduction section in contact with multiple first chips. The heat generated by each first chip is conducted to the heat exchange cavity inside the heat exchange section through the contact surface between itself and the heat exchange section. The heat entering the heat exchange cavity is absorbed by the working medium inside the heat exchange cavity. The working medium that absorbs heat increases in temperature and vaporizes into hot steam. The hot steam leaves the heat exchange cavity and enters the heat conduction cavity, moving along the extension direction of the heat exchange section within the heat conduction cavity. At the same time, the hot steam entering each heat conduction cavity conducts its own heat to the air outside the heat conduction section where the heat conduction cavity is located through the cavity wall. After the heat of the hot steam is dissipated, it liquefies and becomes the working medium again.

[0025] In the above process, since the heat exchange cavity and the heat conduction cavity are connected, the heat generated by the first chip only has thermal resistance when it passes through the first chip into the heat exchange cavity, heats the working medium into hot steam, and passes through the heat conduction part into the air outside the heat conduction part. That is, the thermal resistance of the heat dissipation structure is small, which can better dissipate heat from the first chip. In addition, since the contact surface between the side of the heat exchange part away from the heat conduction part and each first chip is the same size, enough working medium can be added into the heat exchange cavity so that the heat generated by each first chip can be completely absorbed by the working medium in the heat exchange cavity after passing through the heat exchange part. This ensures that the heat absorbed by the heat exchange part is the same for each first chip, and guarantees that the cooling effect of the heat dissipation structure on each first chip is the same, and the temperature of each first chip is basically the same.

[0026] In summary, the heat dissipation structure in this embodiment, through the above-mentioned settings, can reduce the internal thermal resistance of the heat dissipation structure and provide the same degree of heat dissipation to each first chip cooled by the heat dissipation structure.

[0027] This application also proposes an optoelectronic packaging system, including the heat dissipation structure described in any of the foregoing claims, and

[0028] Circuit board;

[0029] A substrate is disposed on one side of the circuit board along the second direction and is electrically connected to the circuit board;

[0030] The second chip is disposed on the side of the substrate opposite to the circuit board and is electrically connected to the substrate;

[0031] One or more first chips are disposed on the side of the substrate away from the circuit board and electrically connected to the substrate, and the first chips are disposed on the outer periphery of the second chips; the side of the heat exchange section away from the heat conduction section is in contact with the side of at least one first chip away from the substrate.

[0032] In the optoelectronic packaging system of this embodiment, the side of the heat exchange section away from the heat conduction section is in contact with at least one first chip. When the side of the heat exchange section away from the heat conduction section is in contact with multiple first chips, the heat generated by each first chip is conducted to the heat exchange cavity inside the heat exchange section through the contact surface between itself and the heat exchange section. The heat entering the heat exchange cavity is absorbed by the working medium inside the heat exchange cavity. The temperature of the working medium that absorbs the heat rises and it vaporizes into hot steam. The hot steam leaves the heat exchange cavity and enters the heat conduction cavity, and moves in the heat conduction cavity along the extension direction of the heat conduction cavity. At the same time, the hot steam entering each heat conduction cavity conducts its own heat to the air outside the heat conduction section where the heat conduction cavity is located through the cavity wall of the heat conduction cavity. After the heat of the hot steam is dissipated, it liquefies and becomes the working medium again.

[0033] In the above process, since the heat exchange cavity and the heat conduction cavity are connected, the heat generated by the first chip only has thermal resistance when it passes through the first chip into the heat exchange cavity, heats the working medium into hot steam, and passes through the heat conduction part into the air outside the heat conduction part. That is, the thermal resistance of the heat dissipation structure is small, which can better dissipate heat from the first chip. In addition, since the contact surface between the side of the heat exchange part away from the heat conduction part and each first chip is the same size, enough working medium can be added into the heat exchange cavity so that the heat generated by each first chip can be completely absorbed by the working medium in the heat exchange cavity after passing through the heat exchange part. This ensures that the heat absorbed by the heat exchange part is the same for each first chip, and guarantees that the cooling effect of the heat dissipation structure on each first chip is the same, and the temperature of each first chip is basically the same.

[0034] In summary, the optoelectronic packaging system in this embodiment can reduce the internal thermal resistance of the heat dissipation structure through the above-mentioned settings, and provide the same degree of heat dissipation to each first chip cooled by the heat dissipation structure. Attached Figure Description

[0035] To more clearly illustrate the technical solutions in the embodiments or exemplary embodiments of this application, the drawings used in the description of the embodiments or exemplary embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0036] Figure 1 is a schematic diagram of the structure of an optoelectronic packaging system in one embodiment of this application.

[0037] Figure 2 is a schematic diagram of the heat dissipation structure of the optoelectronic packaging system shown in Figure 1 after the first heat sink component has been removed.

[0038] Figure 3 shows the thermal resistance network of a heat dissipation structure in one embodiment of this application.

[0039] Reference numerals: 1. Optoelectronic packaging system; 10. Heat dissipation structure; 100. First heat sink; 110. Heat dissipation fins; 200. Heat exchanger; 210. Heat exchange chamber; 211. Contact area; 212. Heat-conducting part; 220. Heat-conducting chamber; 221. Liquid absorption layer; 300. First liquid absorption layer; 310. Heat-conducting channel; 311. Second liquid absorption layer; 320. Heat exchange chamber; 321. Second heat sink; 400. Circuit board; 20. Substrate; 30. Second chip; 50. Detailed Implementation

[0040] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0041] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0042] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0043] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0044] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0045] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0046] Please refer to Figure 1, which shows a schematic diagram of the structure of an optoelectronic packaging system in one embodiment of this application. This embodiment provides a heat dissipation structure 10, including: a heat exchanger 200, comprising a heat exchange portion 210 for contacting one or more first chips 50 and extending along a first direction, wherein the heat exchange portion 210 has a heat exchange cavity 211; and one or more heat-conducting portions 220, disposed on the side of the heat exchange portion 210 opposite to the one or more first chips 50 and extending along a second direction, wherein the one or more heat-conducting portions 220 have a heat-conducting cavity 221, which communicates with the heat exchange cavity 211; and wherein the heat exchanger 200 contains a working medium for heat exchange, and the first and second directions are not parallel to each other.

[0047] In this embodiment, the heat dissipation structure 10 has a heat exchange section 210 that contacts multiple first chips 50 on the side opposite to the heat conduction section 220 along the first direction. The heat generated by each first chip 50 is conducted to the heat exchange cavity 211 inside the heat exchange section 210 through the contact surface between itself and the heat exchange section 210. The heat entering the heat exchange cavity 211 is absorbed by the working medium inside the heat exchange cavity 211. The working medium that absorbs the heat increases in temperature and vaporizes into hot steam. The hot steam leaves the heat exchange cavity 211 and enters the heat conduction cavity 221, and moves in the heat conduction cavity 221 along the extension direction of the heat conduction cavity 221. At the same time, the hot steam entering each heat conduction cavity 221 conducts its own heat to the air outside the heat conduction section 220 where the heat conduction cavity 221 is located through the cavity wall of the heat conduction cavity 221. After the heat of the hot steam is dissipated, it liquefies and becomes the working medium again.

[0048] In the above process, since the heat exchange cavity 211 is connected to the heat conduction cavity 221, the heat generated by the first chip 50 only has thermal resistance when it passes through the first chip 50 into the heat exchange cavity 211, the heating working medium becomes hot steam, and passes through the heat conduction part 220 into the air outside the heat conduction part 220. That is, the thermal resistance of the heat dissipation structure 10 is small, which can better dissipate heat from the first chip 50. In addition, since the contact surface between the side of the heat exchange part 210 away from the heat conduction part 220 and each first chip 50 is the same size, enough working medium can be added into the heat exchange cavity 211 so that the heat generated by each first chip 50 can be completely absorbed by the working medium in the heat exchange cavity 211 after passing through the heat exchange part 210. This makes the heat absorbed by the heat exchange part 210 the same for each first chip 50, ensuring that the cooling effect of the heat dissipation structure 10 on each first chip 50 is the same, and the temperature of each first chip 50 is basically the same.

[0049] In summary, the heat dissipation structure 10 in this embodiment can reduce the internal thermal resistance of the heat dissipation structure 10 through the above-mentioned settings, and provide the same degree of heat dissipation to each first chip 50 cooled by the heat dissipation structure 10.

[0050] It should be noted that the first chip 50 is used for photoelectric modulation, including but not limited to a light engine.

[0051] Please refer to Figures 1 and 2. In some embodiments, the second direction is parallel to the direction of gravity of the working medium.

[0052] In this embodiment, by setting the second direction to be parallel to the gravity direction of the working medium, the heat of the hot steam in each heat conduction cavity 221 is dissipated, and after being reliquefied into the working medium, it can return from the heat conduction cavity 221 to the heat exchange cavity 211 under its own gravity.

[0053] In some embodiments, the working medium includes, but is not limited to, water and Freon.

[0054] Please refer to Figures 1 and 2. In some embodiments, the heat conduction cavity 221 and the heat exchange cavity 211 are configured as vacuum chambers.

[0055] In this embodiment, by setting the heat conduction cavity 221 and the heat exchange cavity 211 as vacuum chambers, the boiling point of the working medium in the heat exchange cavity 211 can be reduced, making it easier for the working medium in the heat exchange cavity 211 to absorb heat and quickly turn into hot steam.

[0056] Please refer to Figures 1 and 2. In some embodiments, the heat exchanger 200 is made of any one of copper, aluminum, or stainless steel.

[0057] In this embodiment, by setting the material of the heat exchanger 200 to include any one of copper, aluminum, and stainless steel, the heat absorption capacity of the heat exchanger 200 can be enhanced, the maximum heat that the heat exchanger 200 can absorb can be increased, and thus the heat generated by each first chip 50 can be uniformly absorbed by the heat exchanger 200.

[0058] Please refer to Figures 1 and 2. In some embodiments, the heat dissipation structure 10 includes a liquid absorption layer 300 disposed within the heat dissipation structure 10. The liquid absorption layer 300 includes a first liquid absorption layer 310, which is located within the heat conduction cavity 221 and covers the cavity wall of the heat conduction cavity 221. The side of the first liquid absorption layer 310 away from the cavity wall of the heat conduction cavity 221 forms a heat conduction channel 311.

[0059] In this embodiment, the material of the first liquid-absorbing layer 310 can be the same as that of the heat exchanger 200. However, it is understood that in other embodiments, the material of the first liquid-absorbing layer 310 can also be different from that of the heat exchanger 200.

[0060] In this embodiment, the heat generated by the first chip 50 enters the heat exchange cavity 211 and is absorbed by the working medium inside the heat exchange cavity 211. The working medium absorbs heat, its temperature rises, and it vaporizes into hot steam. This hot steam leaves the heat exchange cavity 211 and enters the heat conduction channel 311, moving along the extension direction of the heat conduction channel 311. Simultaneously, the hot steam entering each heat conduction channel 311 passes through the first liquid absorption layer 310, conducting its own heat to the cavity wall of the heat conduction cavity 221. The heat conducted to the cavity wall of the heat conduction cavity 221 is further conducted through the cavity wall of the heat conduction cavity 221 and finally to the air outside the heat conduction part 220 where the heat conduction cavity 221 is located. The presence of the first liquid absorption layer 310 prevents the working medium from directly contacting the cavity wall of the heat conduction cavity 221, thus protecting the cavity wall of the heat conduction cavity 221.

[0061] In addition, it should be noted that the material of the first liquid absorbing layer 310 is the same as that of the heat exchanger 200. This can prevent a chemical reaction between the heat exchanger 200 and the first liquid absorbing layer 310, and prevent the cavity wall of the heat conduction cavity 221 in the heat exchanger 200 from being corroded by the first liquid absorbing layer 310.

[0062] In other embodiments, the material of the first absorbent layer 310 is configured to not chemically react with the heat exchanger 200.

[0063] Please refer to Figures 1 and 2. In some embodiments, the first liquid-absorbing layer 310 is provided with a capillary structure (not shown in the figure). The capillary structure is configured to transfer the working medium that is in contact with the side of the first liquid-absorbing layer 310 away from the cavity wall of the heat-conducting cavity 221 back to the heat exchange cavity 211.

[0064] In this embodiment, the hot steam entering each heat-conducting channel 311 is liquefied into a working medium after contacting the side of the first liquid-absorbing layer 310 away from the heat-conducting cavity 221. It is then transported back to the heat exchange cavity 211 for reuse by the capillary structure on the first liquid-absorbing layer 310.

[0065] It should be noted that the transport direction of the capillary structure on the first liquid absorption layer 310 is the first transport direction S1, which is parallel to the second direction.

[0066] Please refer to Figures 1 and 2. In some embodiments, the liquid-absorbing layer 300 includes a second liquid-absorbing layer 320, which is located inside the heat exchange chamber 211 and covers the cavity wall of the heat exchange chamber 211. The side of the second liquid-absorbing layer 320 away from the cavity wall of the heat exchange chamber 211 forms a heat exchange chamber 321, in which the working medium is located. The heat exchange chamber 321 is connected to the heat conduction channel 311.

[0067] In this embodiment, the material of the second liquid-absorbing layer 320 can be the same as that of the heat exchanger 200. However, it is understood that in other embodiments, the material of the second liquid-absorbing layer 320 can also be different from that of the heat exchanger 200.

[0068] In this embodiment, the heat generated by each first chip 50 is conducted to the second absorbing layer 320 through its contact surface with the heat exchange section 210. The heat conducted to the second absorbing layer 320 enters the heat exchange chamber 321 enclosed by the second absorbing layer 320. The heat entering the heat exchange chamber 321 is absorbed by the working medium inside the heat exchange chamber 321. The temperature of the working medium that absorbs the heat rises, and it vaporizes into hot steam. This hot steam leaves the heat exchange chamber 321 and enters the heat conduction channel 311. The presence of the second absorbing layer 320 prevents the working medium from directly contacting the cavity wall of the heat exchange chamber 211, thus protecting the cavity wall of the heat exchange chamber 211.

[0069] In addition, it should be noted that the material of the second liquid absorbing layer 320 is the same as that of the heat exchanger 200. This can prevent chemical reactions between the heat exchanger 200 and the second liquid absorbing layer 320, and prevent the cavity wall of the heat exchange chamber 211 in the heat exchanger 200 from being corroded by the second liquid absorbing layer 320.

[0070] In other embodiments, the material of the second absorbent layer 320 is configured to not chemically react with the heat exchanger 200.

[0071] In other embodiments, the second liquid-absorbing layer 320 is provided with a capillary structure, which is configured to transport the working medium in the heat exchange chamber 321 along the second transmission direction S2 to a position in the heat exchange chamber 321 corresponding to the contact surface of the heat exchange element 200 and the first chip 50, wherein the second transmission direction S2 is parallel to the first direction.

[0072] Please refer to Figures 1 and 2. In some embodiments, multiple heat-conducting parts 220 are arranged at intervals along a first direction.

[0073] In this embodiment, by setting multiple heat-conducting parts 220 arranged at intervals along the first direction, the heat exchanger 200 can dissipate heat from the multiple first chips 50 located on the side of the heat exchanger 210 away from the heat-conducting parts 220 and arranged at intervals along the first direction.

[0074] Please refer to Figures 1 and 2. In some embodiments, the heat dissipation structure 10 includes one or more sets of first heat dissipation components 100, which are disposed on the heat-conducting part 220.

[0075] In this embodiment, the hot steam entering each heat-conducting cavity 221 conducts its own heat through the cavity wall to the first heat sink 100 connected to the heat-conducting part 220 where the heat-conducting cavity 221 is located.

[0076] It should be further explained that, as shown in Figure 3, the thermal resistance network of the heat dissipation structure 10 in this embodiment generates a first contact thermal resistance during the process of the heat generated by the first chip 50 entering the heat exchange cavity 211; an evaporation thermal resistance is generated during the process of the working medium in the heat exchange cavity 211 being heated into hot steam and entering the heat conduction cavity 221; a second contact thermal resistance is generated during the process of the heat of the hot steam in the heat conduction cavity 221 being conducted from the cavity wall of the heat conduction cavity 221 to the first heat sink 100; and a convection thermal resistance is generated during the process of the heat in the first heat sink 100 being conducted to the air outside the first heat sink 100. In summary, it can be seen that the heat dissipation structure 10 in this embodiment has less thermal resistance during the heat dissipation process, and the heat dissipation structure 10 can dissipate heat better.

[0077] In some embodiments, the first heat sink 100 includes a plurality of heat sink fins 110.

[0078] Please refer to Figures 1 and 2. In some embodiments, the heat exchange section 210 is provided with a contact area 212 for contacting the first chip 50. The center of the contact area 212 is equidistant from the opposite sides of the heat exchange section 210 along the first direction.

[0079] In this embodiment, by setting the center of the contact area 212 and the distance between the two opposite sides of the heat exchange section 210 along the first direction to be equal, the working medium located in the heat exchange cavity 211 at the position corresponding to the contact area 212 along the first direction can move to the position corresponding to the contact area 212 in the heat exchange cavity 211 in a timely manner to absorb the heat generated by the first chip 50 and improve the heat dissipation efficiency of the heat dissipation structure 10.

[0080] It should be noted that the contact area 212 is the contact surface between the heat exchange section 210 and the first chip 50.

[0081] In some embodiments, the heat exchanger 200 includes a plurality of heat dissipation portions (not shown), and the heat conduction portion 220 is provided with at least one heat dissipation portion, the heat dissipation portion having a heat dissipation cavity (not shown), the heat dissipation cavity communicating with the heat conduction cavity 221.

[0082] In this embodiment, the hot steam entering each heat-conducting cavity 221, part of which conducts its own heat through the cavity wall of the heat-conducting cavity 221 to the air outside the heat-conducting part 220 where the heat-conducting cavity 221 is located; the other part enters the heat dissipation cavity and conducts its own heat to the air outside the heat dissipation part where the heat dissipation cavity is located.

[0083] In some embodiments, the heat dissipation structure 10 includes a plurality of first heat dissipation components 100, a portion of the first heat dissipation components 100 being disposed on the heat conduction portion 220, and another portion of the first heat dissipation components 100 being disposed on the heat dissipation portion.

[0084] Please refer to Figures 1 and 2. In some embodiments, the heat dissipation structure 10 includes one or more sets of second heat dissipation components 400. The second heat dissipation components 400 are used to contact the second chip 40 and dissipate heat from the second chip 40.

[0085] In this embodiment, the second heat sink 400 contacts the second chip 40 to dissipate heat from the heated second chip 40. It should be noted that the second chip 40 is used for communication switching, including but not limited to ASIC switching chips.

[0086] Please refer to Figure 1, which shows a schematic diagram of the structure of an optoelectronic packaging system according to an embodiment of this application. The optoelectronic packaging system 1 provided in this application includes the aforementioned heat dissipation structure 10, a circuit board 20, a substrate 30, a second chip 40, and a plurality of first chips 50. The substrate 30 is disposed on one side of the circuit board 20 along a second direction and is electrically connected to the circuit board 20; the second chip 40 is disposed on the side of the substrate 30 away from the circuit board 20 and is electrically connected to the substrate 30; one or more first chips 50 are disposed on the side of the substrate 30 away from the circuit board 20 and are electrically connected to the substrate 30, and the first chips 50 are disposed on the outer periphery of the second chip 40; the heat exchange section 210 is on the side away from the heat conduction section 220 and contacts at least one first chip 50 on the side back of the substrate 30.

[0087] In the optoelectronic packaging system 1 of this embodiment, the heat exchange section 210, on the side away from the heat conduction section 220, contacts at least one first chip 50. When the side of the heat exchange section 210 away from the heat conduction section 220 contacts multiple first chips 50, the heat generated by each first chip 50 is conducted to the heat exchange cavity 211 inside the heat exchange section 210 through the contact surface between itself and the heat exchange section 210. The heat entering the heat exchange cavity 211 is absorbed by the working medium inside the heat exchange cavity 211. The working medium that absorbs heat increases in temperature and vaporizes into hot steam. The hot steam leaves the heat exchange cavity 211 and enters the heat conduction cavity 221, and moves in the heat conduction cavity 221 along the extension direction of the heat conduction cavity 221. At the same time, the hot steam entering each heat conduction cavity 221 conducts its own heat to the air outside the heat conduction section 220 where the heat conduction cavity 221 is located through the cavity wall of the heat conduction cavity 221. After the heat of the hot steam is dissipated, it liquefies and becomes the working medium again.

[0088] In the above process, since the heat exchange cavity 211 is connected to the heat conduction cavity 221, the heat generated by the first chip 50 only has thermal resistance when it passes through the first chip 50 into the heat exchange cavity 211, the heating working medium becomes hot steam, and passes through the heat conduction part 220 into the air outside the heat conduction part 220. That is, the thermal resistance of the heat dissipation structure 10 is small, which can better dissipate heat from the first chip 50. In addition, since the contact surface between the side of the heat exchange part 210 away from the heat conduction part 220 and each first chip 50 is the same size, enough working medium can be added into the heat exchange cavity 211 so that the heat generated by each first chip 50 can be completely absorbed by the working medium in the heat exchange cavity 211 after passing through the heat exchange part 210. This makes the heat absorbed by the heat exchange part 210 the same for each first chip 50, ensuring that the cooling effect of the heat dissipation structure 10 on each first chip 50 is the same, and the temperature of each first chip 50 is basically the same.

[0089] In summary, the optoelectronic packaging system 1 in this embodiment can reduce the internal thermal resistance of the heat dissipation structure 10 through the above-mentioned settings, and provide the same degree of heat dissipation to each first chip 50 cooled by the heat dissipation structure 10.

[0090] It should be noted that the first direction, the second direction, and the third direction in Figure 1 and Figure 2 are set to intersect each other.

[0091] In some embodiments, the second chip 40 is provided on the side opposite to the substrate 30 along the second direction, which is in contact with the second heat sink 400, and the second heat sink 400 is configured to dissipate heat from the second chip 40.

[0092] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0093] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A heat dissipation structure, comprising: A heat exchanger includes: a heat exchange portion for contacting one or more first chips and extending along a first direction, wherein the heat exchange portion has a heat exchange cavity; and One or more heat-conducting portions are disposed on the side of the heat exchange portion opposite to the one or more first chips and extend in a second direction, wherein the one or more heat-conducting portions have a heat-conducting cavity that communicates with the heat exchange cavity; and The heat exchanger contains a working medium for heat exchange, and the first direction and the second direction are not parallel to each other.

2. The heat dissipation structure according to claim 1, wherein, The second direction is parallel to the direction of gravity of the working medium.

3. The heat dissipation structure according to claim 1, wherein, The heat-conducting cavity and the heat-exchange cavity are constructed as a vacuum chamber.

4. The heat dissipation structure according to claim 1, wherein, The heat exchanger is made of any one of copper, aluminum, or stainless steel.

5. The heat dissipation structure according to claim 1, wherein, The heat dissipation structure includes a liquid absorption layer disposed within the heat dissipation structure. The liquid absorption layer includes a first liquid absorption layer, which is located within the heat conduction cavity and covers the cavity wall of the heat conduction cavity. The first liquid-absorbing layer forms a heat-conducting channel on the side away from the cavity wall of the heat-conducting cavity.

6. The heat dissipation structure according to claim 5, wherein, The first liquid-absorbing layer is provided with a capillary structure, which is configured to transfer the working medium that is in contact with the side of the first liquid-absorbing layer opposite to the cavity wall of the heat-conducting cavity back to the heat exchange cavity.

7. The heat dissipation structure according to claim 5, wherein, The liquid absorption layer includes a second liquid absorption layer, which is located inside the heat exchange cavity and covers the cavity wall of the heat exchange cavity; The second liquid-absorbing layer forms a heat exchange chamber on the side away from the cavity wall of the heat exchange chamber, the working medium is located in the heat exchange chamber, and the heat exchange chamber is connected to the heat conduction channel.

8. The heat dissipation structure according to claim 1, wherein, The plurality of heat-conducting parts are arranged at intervals along the first direction.

9. The heat dissipation structure according to claim 1, wherein, The heat dissipation structure includes one or more sets of first heat dissipation components, which are disposed on the heat-conducting part.

10. The heat dissipation structure according to claim 1, wherein, The heat exchange section is provided with a contact area for contacting the first chip, and the center of the contact area is equidistant from the opposite sides of the heat exchange section along the first direction.

11. The heat dissipation structure according to claim 1, wherein, The heat exchanger includes multiple heat dissipation sections, and at least one heat dissipation section is provided on the heat conduction section. The heat dissipation section has a heat dissipation cavity, and the heat dissipation cavity is in communication with the heat conduction cavity.

12. The heat dissipation structure according to claim 1, wherein, The heat dissipation structure includes one or more sets of second heat dissipation components, which are used to contact the second chip and dissipate heat from the second chip.

13. A photoelectric packaging system, comprising the heat dissipation structure as described in any one of claims 1 to 12, and Circuit board; A substrate is disposed on one side of the circuit board along the second direction and is electrically connected to the circuit board; The second chip is disposed on the side of the substrate opposite to the circuit board and is electrically connected to the substrate; One or more first chips are disposed on the side of the substrate away from the circuit board and electrically connected to the substrate, and the first chips are arranged in a ring around the outer periphery of the second chips; the side of the heat exchange section away from the heat conduction section is in contact with the side of at least one first chip away from the substrate.

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