Substrate processing method and substrate processing device

Abstract

Provided are a substrate processing method and a substrate processing device which are capable of making a boundary between a portion subjected to a surface treatment and a portion not subjected to the surface treatment uniform even if the surface treatment time has increased. The substrate processing method discharges a processing liquid toward a peripheral edge part (Ws) of a rotating substrate (W), the substrate processing method involving: obtaining a deviation amount (ΔC) by which an actual liquid application position (P2) at which the processing liquid reaches the substrate (W) deviates from a predetermined liquid application position (P1) due to heating of the substrate (W); and controlling a processing liquid discharge nozzle (51A) in accordance with the deviation amount (ΔC) so that the actual liquid application position reaches the predetermined liquid application position (P1).

Description

Substrate processing method and substrate processing apparatus

[0001] The present disclosure relates to a substrate processing method and an apparatus for processing a peripheral edge portion of a substrate with a processing material. Herein, the substrate includes a semiconductor wafer, a glass substrate for a liquid crystal display device, a glass substrate for a plasma display, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a glass substrate for a photomask, a substrate for a solar cell, etc. (hereinafter simply referred to as "substrate"). Further, the processing includes etching processing. As the processing material, any form of processing material capable of processing a substrate, such as gas, liquid, solid, light, and laser, can be used.

[0002] As a substrate processing apparatus that performs chemical processing, cleaning processing, or the like by supplying a processing liquid to the peripheral edge portion of a substrate such as a semiconductor wafer while rotating the substrate, for example, the apparatuses described in Patent Document 1 and Patent Document 2 are known. When surface processing of a substrate is performed in the substrate processing apparatus as described above, it is required that the boundary between a surface-processed portion and an unprocessed portion at the peripheral edge of the substrate is continuous in a uniform state in the circumferential direction of the substrate.

[0003] Japanese Unexamined Patent Publication No. 2020-061405 Japanese Unexamined Patent Publication No. 2018-142675

[0004] However, the inventors of the present invention have found that when the substrate is heated to perform surface treatment on the substrate, if the surface treatment time is prolonged, the boundary between the surface-processed portion and the unprocessed portion at the peripheral edge of the substrate may become non-uniform.

[0005] Therefore, an object of one aspect of the present disclosure is to provide a substrate processing method and a substrate processing apparatus that can make the boundary between a surface-processed portion and an unprocessed portion uniform even when the surface treatment time is prolonged.

[0006] To solve the above problems, a substrate processing method according to one aspect of the present disclosure is a substrate processing method that injects a processing material toward the outer periphery of a rotating substrate, wherein the amount of displacement by which the actual arrival position of the processing material reaches the substrate is shifted from a predetermined arrival position due to heating of the substrate is determined, and the injection of the processing material is controlled according to the amount of displacement so that the actual arrival position becomes the predetermined arrival position.

[0007] A substrate processing apparatus according to another aspect of the present disclosure is a substrate processing apparatus for injecting a processing material toward the outer periphery of a rotating substrate, comprising: a holding table for holding the substrate; a heater for heating the substrate; an injection mechanism for injecting the processing material; a control unit for controlling the injection mechanism; and a memory for storing at least information indicating the control operation of the control unit, wherein the control unit cooperates with the memory to determine the amount of deviation that causes the actual arrival position of the processing material injected by the injection mechanism to shift from a predetermined arrival position due to heating of the substrate by the heater, and controls the injection mechanism according to the amount of deviation so that the actual arrival position becomes the predetermined arrival position.

[0008] According to one aspect of this disclosure, a substrate processing method and a substrate processing apparatus can be provided that make the boundary between the treated and untreated areas uniform, even if the surface processing time is extended.

[0009] This is a plan view showing the schematic configuration of a substrate processing system equipped with a processing unit according to the embodiment of this disclosure. This is a diagram showing the internal structure of the processing unit shown in Figure 1. This is a schematic plan view showing the configuration of the substrate processing unit provided in the processing unit shown in Figure 2. This is a diagram showing the configuration of the substrate observation mechanism provided in the processing unit shown in Figure 2. This is a flowchart showing a beveling process performed as an example of substrate processing operation by the processing unit shown in Figure 2. This is a schematic diagram showing a flat state in which the substrate is not warped and a warped state in which the substrate is warped. This is a schematic diagram showing the relationship between the amount of warping of the substrate and the amount of displacement of the liquid application position. This is a flowchart showing a discharge position change process performed while processing the peripheral edge of the substrate with processing liquid, as shown in Figure 5. This is a schematic diagram showing a modified version of the processing unit shown in Figure 2, which includes additional members to the processing unit shown in Figure 2. This is a diagram showing an example of an image taken by the camera shown in Figure 9.

[0010] Hereinafter, one embodiment of the present disclosure will be described in detail with reference to the drawings.

[0011] (Substrate Processing System) Figure 1 is a plan view showing the schematic configuration of a substrate processing system 100 equipped with a processing unit 1 according to the embodiment of this disclosure. This does not show the external appearance of the substrate processing system 100, but is a schematic diagram that clearly shows its internal structure by excluding the outer wall panels and some other components of the substrate processing system 100. The following description mainly concerns the substrate processing system 100, but also describes a substrate processing method in which a processing liquid (processing material) is discharged (injected) toward the peripheral edge (outer periphery) of the substrate W.

[0012] The substrate processing system 100 is a single-wafer type device installed, for example, in a cleanroom, which processes substrates W on which circuit patterns, etc., are formed, one by one. The processing unit 1 equipped in the substrate processing system 100 performs substrate processing using a processing solution.

[0013] In this embodiment, both main surfaces of the substrate W are referred to as "surfaces." Furthermore, on the substrate W, the surface facing downwards is referred to as the "bottom surface," and the surface facing upwards is referred to as the "top surface." The following explanation will primarily use a processing unit 1, which is used for processing semiconductor wafers, as an example, with reference to the drawings, but the method is similarly applicable to processing various other substrates.

[0014] As shown in Figure 1, the substrate processing system 100 has a substrate processing area 110 for processing the substrate W. An indexer section 120 is provided adjacent to this substrate processing area 110. The indexer section 120 has a container holding section 121 that can hold a plurality of containers C for housing the substrate W.

[0015] Furthermore, the indexer unit 120 is equipped with an indexer robot 122 for accessing the container C held by the container holding unit 121 to remove unprocessed substrates W from the container C or to store processed substrates W in the container C. Each container C contains multiple substrates W in a nearly horizontal position.

[0016] The indexer robot 122 comprises a base portion 122a fixed to the device housing, a multi-joint arm 122b rotatably mounted on the base portion 122a around a vertical axis, and a hand 122c attached to the tip of the multi-joint arm 122b. The hand 122c is structured to hold the substrate W placed on its upper surface.

[0017] In the substrate processing area 110, a mounting table 112 is provided to allow substrates W from the indexer robot 122 to be placed on it. In a plan view, a substrate transport robot 111 is positioned approximately in the center of the substrate processing area 110. Furthermore, multiple processing units 1 are arranged to surround this substrate transport robot 111.

[0018] Specifically, multiple processing units 1 are arranged facing the space where the substrate transport robot 111 is located. The substrate transport robot 111 randomly accesses the mounting table 112 with respect to these processing units 1 and transfers the substrate W between the robot and the mounting table 112. Meanwhile, each processing unit 1 performs predetermined processing on the substrate W and corresponds to the substrate processing apparatus of this disclosure.

[0019] In this embodiment, these processing units 1 have the same function. Therefore, parallel processing of multiple substrates W is possible. Note that the substrate transfer robot 111 does not necessarily need the mounting table 112 if it is possible to directly receive the substrates W from the indexer robot 122.

[0020] (Inside the Processing Unit) Figure 2 shows the internal structure of the processing unit 1 shown in Figure 1. Figure 3 is a schematic plan view and a partially enlarged view showing the configuration of the substrate processing unit SP included in the processing unit 1 shown in Figure 2. In Figure 2, the dimensions and number of each part may be exaggerated or simplified for ease of understanding.

[0021] As shown in Figures 2 and 3, the processing unit 1 has a structure in which a substrate processing unit SP is arranged in the internal space 12 within the chamber 11. The processing unit 1 comprises the substrate processing unit SP and a control unit 10. The processing unit 1 is a device that discharges processing liquid toward the peripheral Ws of a substrate W that rotates within the chamber 11.

[0022] Base support members 16, 16 are fixed to the upper surface of the bottom wall 11a of the chamber 11 by fastening components such as bolts, spaced apart from each other. A base member 17 is fixed to the upper ends of these base support members 16, 16 by fastening components such as bolts. The upper surface of this base member 17 is finished to allow the installation of a substrate processing unit SP for performing substrate processing on a substrate W, and the substrate processing unit SP is installed on this upper surface. Each part constituting this substrate processing unit SP is electrically connected to a control unit 10 that controls the entire apparatus and operates in accordance with instructions from the control unit 10. The control unit 10 corresponds to the control unit of this disclosure.

[0023] In Figure 1, the processing unit 1 has a transport opening in the side wall of the chamber 11 facing the substrate transport robot 111, allowing the internal space 12 to communicate with the outside of the chamber 11. As a result, the hand (not shown) of the substrate transport robot 111 can access the substrate processing unit SP through the transport opening. In other words, the transport opening allows substrates W to be loaded into and out of the internal space 12. A shutter 15 for opening and closing this transport opening is attached to the side wall of the chamber 11.

[0024] A shutter opening / closing mechanism (not shown) is connected to the shutter 15, which opens and closes the shutter 15 in response to an opening / closing command from the control unit 10. More specifically, in the processing unit 1, when an unprocessed substrate W is brought into the chamber 11, the shutter opening / closing mechanism opens the shutter 15, and the unprocessed substrate W is brought into the substrate processing unit SP by the handle of the substrate transport robot 111. In other words, the substrate W is placed on the spin chuck 21 of the substrate processing unit SP with its top surface facing upwards.

[0025] Then, after the substrate is loaded, the handle of the substrate transport robot 111 retracts from the chamber 11, and the shutter opening / closing mechanism closes the shutter 15. Then, within the processing space 12a of the chamber 11, the substrate processing unit SP performs beveling on the peripheral Ws of the substrate W. After the beveling is completed, the shutter opening / closing mechanism opens the shutter 15 again, and the handle of the substrate transport robot 111 removes the processed substrate W from the substrate processing unit SP.

[0026] (Substrate Processing Unit) The substrate processing unit SP includes a holding and rotating mechanism 2, a splash prevention mechanism 3, an upper surface protection heating mechanism 4, a discharge mechanism (injection mechanism) 5, an atmosphere separation mechanism 6, and a substrate observation mechanism 7. These mechanisms are mounted on a base member 17. The holding and rotating mechanism 2, the splash prevention mechanism 3, the upper surface protection heating mechanism 4, the discharge mechanism 5, the atmosphere separation mechanism 6, and the substrate observation mechanism 7 are arranged in a predetermined relative position.

[0027] (Holding and Rotating Mechanism) The holding and rotating mechanism 2 includes a substrate holding section 2A that holds the substrate W in a substantially horizontal position with one main surface of the substrate W facing upward, and a rotating mechanism 2B that synchronously rotates the substrate holding section 2A holding the substrate W and a part of the scattering prevention mechanism 3. Therefore, when the rotating mechanism 2B is activated in response to a rotation command from the control unit 10, the substrate W and the rotating cup section 31 of the scattering prevention mechanism 3 are rotated around a rotation axis AX that extends parallel to the vertical direction.

[0028] The substrate holding section 2A is equipped with a spin chuck 21, which is a disc-shaped member smaller than the substrate W. The spin chuck 21 corresponds to an example of the holding table of this disclosure and is made of resin. The upper surface of the spin chuck 21 is substantially horizontal, and the spin chuck 21 is positioned so that its central axis coincides with the rotation axis AX.

[0029] The spin chuck 21 is installed inside the chamber 11 and on which the substrate W is placed. A cylindrical rotating shaft portion 22 is connected to the lower surface of the spin chuck 21. The rotating shaft portion 22 extends vertically with its axis aligned with the rotation axis AX. A rotating mechanism 2B is also connected to the rotating shaft portion 22.

[0030] The rotating mechanism 2B includes a motor 23 and a power transmission unit 24. The motor 23 generates rotational driving force to rotate the substrate holding unit 2A and the rotating cup unit 31 of the anti-scattering mechanism 3. The power transmission unit 24 transmits the rotational driving force generated by the motor 23 to the rotating shaft unit 22.

[0031] A through-hole (not shown) is provided in the center of the spin chuck 21, and this through-hole communicates with the internal space of the rotating shaft portion 22. A pump 26 is connected to the internal space via piping 25, which has a valve (not shown) interposed therein. The pump 26 and the valve are electrically connected to the control unit 10 and operate in response to commands from the control unit 10. This allows negative pressure and positive pressure to be selectively applied to the spin chuck 21.

[0032] For example, when the substrate W is placed on the upper surface of the spin chuck 21 in a nearly horizontal position and the pump 26 applies negative pressure to the spin chuck 21, the spin chuck 21 will attract and hold the substrate W from below. On the other hand, when the pump 26 applies positive pressure to the spin chuck 21, the substrate W becomes removable from the upper surface of the spin chuck 21. Also, when the pump 26 stops suction, the substrate W becomes able to move horizontally on the upper surface of the spin chuck 21.

[0033] A nitrogen gas supply unit 29 is connected to the spin chuck 21 via a pipe 28 located in the center of the rotating shaft portion 22. The nitrogen gas supply unit 29 supplies ambient temperature nitrogen gas, supplied from a utility in the factory where the substrate processing system 100 is installed, to the spin chuck 21 at a flow rate and timing corresponding to the gas supply command from the control unit 10. As a result, the nitrogen gas supply unit 29 circulates the nitrogen gas radially outward from the center on the underside of the substrate W. In this embodiment, nitrogen gas is used, but other inert gases may also be used.

[0034] The rotating mechanism 2B not only rotates the spin chuck 21 integrally with the substrate W, but also has a power transmission unit 27 to rotate the rotating cup portion 31 in synchronization with the rotation. The power transmission unit 27 has an annular member 27a made of a non-magnetic material or resin, a spin chuck-side magnet 27b built into the annular member 27a, and a cup-side magnet 27c built into the lower cup 32, which is a component of the rotating cup portion 31.

[0035] The annular member 27a is attached to the rotating shaft portion 22 and is rotatable together with the rotating shaft portion 22 around the rotating shaft AX. The lower cup 32 is positioned concentrically with the rotating shaft portion 22 and the annular member 27a, with the inner circumferential surface of the lower cup 32 separated from the outer circumferential surface of the annular member 27a by a predetermined distance.

[0036] An engagement pin and a connecting magnet (not shown) are provided on the upper outer edge of the lower cup 32, and these connect the upper cup 33 to the lower cup 32, and this connecting body functions as a rotating cup portion 31. The lower cup 32 is supported on the upper surface of the base member 17 by a bearing (not shown) so as to be rotatable around the rotation axis AX.

[0037] When the annular member 27a rotates together with the rotating shaft 22 by the motor 23, the lower cup 32 rotates in the same direction as the annular member 27a due to the magnetic force between the spin chuck-side magnet 27b and the cup-side magnet 27c, while maintaining the air gap with the annular member 27a. As a result, the rotating cup portion 31 rotates around the rotation axis AX. In other words, the rotating cup portion 31 rotates in the same direction as the substrate W and in synchronization with it.

[0038] (Splatter prevention mechanism) The splash prevention mechanism 3 has a rotating cup portion 31 that can rotate around the rotation axis AX while surrounding the outer circumference of the substrate W held by the spin chuck 21, and a fixed cup portion 34 that is fixedly provided so as to surround the rotating cup portion 31. The rotating cup portion 31 is provided so as to be able to rotate around the rotation axis AX while surrounding the outer circumference of the rotating substrate W by connecting the upper cup 33 to the lower cup 32. The droplets collected by the rotating cup portion 31 are recovered together with the gaseous components and collected in the fixed cup portion 34.

[0039] (Top surface protection heating mechanism) The top surface protection heating mechanism 4 comprises a disc portion 42, an internal heater 421, a heater drive unit 422, a support member 404, and a heating gas supply unit 47, and corresponds to an example of a heater of this disclosure. The disc portion 42 is positioned opposite to the substrate W placed on the spin chuck 21. That is, the disc portion 42 is positioned above the upper surface of the substrate W held by the spin chuck 21 and is held in a horizontal position.

[0040] The disk portion 42 incorporates an internal heater 421 that is driven and controlled by a heater driving portion 422. The disk portion 42 has a diameter slightly smaller than that of the substrate W. The disk portion 42 is supported by a support member 404 such that the lower surface of the disk portion 42 covers, from above, the upper surface region of the substrate W excluding the peripheral edge portion Ws of the substrate W.

[0041] The lower end of the support member 404 is attached to the central portion of the disk portion 42. A cylindrical through-hole (not shown) is formed so as to vertically penetrate the support member 404 and the disk portion 42. A central nozzle 45 is vertically inserted through the through-hole. The central nozzle 45 is connected to a heated gas supply unit 47 via a pipe 46.

[0042] The heated gas supply unit 47 heats room-temperature nitrogen gas supplied from an utility source of the factory where the substrate processing system 100 is installed by means of a heater 471, and supplies the heated nitrogen gas to the substrate W at a flow rate and timing in accordance with a heated gas supply command from the control unit 10. A ribbon heater 48 is attached to a part of the pipe 46. The ribbon heater 48 generates heat in response to a heating command from the control unit 10, and heats the nitrogen gas flowing in the pipe 46.

[0043] The nitrogen gas heated in this way (hereinafter referred to as "heated gas") is pressure-fed toward the central nozzle 45 and discharged from the central nozzle 45. For example, when the disk portion 42 is positioned at a processing position close to the substrate W held by the spin chuck 21 and the heated gas is supplied, the heated gas flows from the central portion of the space sandwiched between the upper surface of the substrate W and the disk portion 42 toward the peripheral edge portion.

[0044] The upper end of the support member 404 is fixed to a horizontally extending beam member 49. The beam member 49 is connected to an elevating mechanism (not shown) attached to the upper surface of the base member 17, and is elevated and lowered by the elevating mechanism in accordance with a command from the control unit 10. For example, in FIG. 2, the beam member 49 is positioned downward, so that the disk portion 42 connected to the beam member 49 via the support member 404 is located at the processing position.

[0045] On the other hand, when the lifting mechanism lifts the beam member 49 in response to a lift command from the control unit 10, the disc portion 42, the beam member 49, and the support member 404 ascend integrally, and the upper cup 33 also interlocks to separate from the lower cup 32 and ascend. This widens the gap between the spin chuck 21, the upper cup 33, and the disc portion 42, making it possible to carry the substrate W into and out of the spin chuck 21.

[0046] (Discharge Mechanism) As shown in the partially enlarged views of FIG. 2 and FIG. 3, the discharge mechanism 5 includes a processing liquid discharge nozzle 51D, a nozzle moving unit 54, a nozzle head 56, and a processing liquid supply unit 52. The nozzle head 56 includes processing liquid discharge nozzles 51A, 51B, 51C and a nozzle holder 53. The processing liquid discharge nozzles 51A to 51C are arranged on the upper surface side of the substrate W, and the processing liquid discharge nozzle 51D is arranged on the lower surface side of the substrate W.

[0047] Note that the discharge mechanism 5 may include only the nozzle moving unit 54 and the nozzle head 56 among the processing liquid discharge nozzle 51D, the nozzle moving unit 54, and the nozzle head 56, or may include only the processing liquid discharge nozzle 51D.

[0048] The processing liquid supply unit 52 supplies processing liquid to the processing liquid discharge nozzles 51A to 51D. The processing liquid discharge nozzles 51A to 51D discharge the processing liquid. In addition, although two processing liquid supply units 52 are illustrated in FIG. 2, they are identical.

[0049] In the present embodiment, three processing liquid discharge nozzles 51A to 51C are provided, and the processing liquid supply unit 52 is connected thereto. Further, the processing liquid supply unit 52 is configured to be capable of supplying chemical liquids such as SC1 (Standard Clean 1) and DHF (Dilute Hydrogen Fluoride) and functional water (CO ２ water, etc.) as processing liquid, and SC1, DHF, and functional water can be discharged independently from the three processing liquid discharge nozzles 51A, 51B, and 51C, respectively. Chemical liquids such as SC1 and DHF are etching liquids for etching the substrate W.

[0050] Each of the processing liquid discharge nozzles 51A to 51C is provided with a discharge port (not shown) for discharging the processing liquid on the lower surface of its tip. The lower parts of the processing liquid discharge nozzles 51A to 51C are positioned in the notches 425 of the disc portion 42, with each discharge port facing the upper surface of the peripheral edge Ws of the substrate W. The upper parts of the processing liquid discharge nozzles 51A to 51C are movably attached to the nozzle holder 53 in the radial direction D1. This nozzle holder 53 is connected to a nozzle moving unit 54. The nozzle moving unit 54 is attached to a lifting mechanism, which moves the nozzle moving unit 54 in the vertical direction Z.

[0051] In this embodiment, a processing liquid discharge nozzle 51D and a nozzle support portion 57 are provided below the substrate W held by the spin chuck 21 in order to discharge the processing liquid toward the lower surface of the peripheral edge Ws of the substrate W. The nozzle support portion 57 has a thin-walled cylindrical portion 571 extending in the vertical direction and a flange portion 572 having an annular shape that is folded outward radially at the upper end of the cylindrical portion 571.

[0052] The cylindrical portion 571 has a shape that allows it to be freely inserted into the air gap formed between the annular member 27a and the lower cup 32. The nozzle support portion 57 is fixedly positioned such that the cylindrical portion 571 is freely inserted into the air gap and the flange portion 572 is positioned between the substrate W held by the spin chuck 21 and the lower cup 32.

[0053] Three processing liquid discharge nozzles 51D are attached to the upper peripheral edge of the flange portion 572. Each processing liquid discharge nozzle 51D has a discharge port (not shown) that opens toward the lower surface of the peripheral edge Ws of the substrate W, and is capable of discharging processing liquid supplied from the processing liquid supply unit 52 via the piping 58.

[0054] (Atmosphere Separation Mechanism) The atmosphere separation mechanism 6 separates the internal space 12 within the chamber 11 into a processing space 12a in which beveling of the substrate W can be performed, and an external space 12b outside the processing space 12a. The atmosphere separation mechanism 6 is positioned to surround the spin chuck 21, the substrate W held by the spin chuck 21, the rotating cup portion 31, and the upper surface protection heating mechanism 4 from above. The atmosphere separation mechanism 6 has a lower sealing cup member 61 and an upper sealing cup member 62. The lower sealing cup member 61 is provided to be movable in the vertical direction.

[0055] As the lower sealing cup member 61 descends and is positioned at its lower limit, the upper sealing cup member 62, the lower sealing cup member 61, and the fixed cup portion 34 are connected in the vertical direction. Thus, the upper sealing cup member 62, the lower sealing cup member 61, and the fixed cup portion 34 form a processing space 12a.

[0056] Furthermore, as the lower sealing cup member 61 rises and moves to the retracted position, the upper cup 33 also rises together with it by engaging with the lower sealing cup member 61. As a result, the upper cup 33 and the upper surface protection heating mechanism 4 move upward away from the spin chuck 21. The movement of the lower sealing cup member 61 to the retracted position creates a transport space for the hand of the substrate transport robot 111 to access the spin chuck 21.

[0057] (Substrate Observation Mechanism) Next, the substrate observation mechanism 7 will be described using Figures 2 and 4. Figure 4 is a diagram showing the configuration of the substrate observation mechanism 7 provided in the processing unit 1 shown in Figure 2. Specifically, reference numeral #401 in Figure 4 is a schematic diagram showing the operation of the substrate observation mechanism 7, and reference numeral #402 in Figure 4 is a perspective view showing the observation head 73 of the substrate observation mechanism 7.

[0058] The substrate observation mechanism 7 is a mechanism for optically observing the peripheral edge Ws of the substrate W being processed, for the purpose of confirming whether the processing is being carried out appropriately. The substrate observation mechanism 7 includes a light source unit 71, an imaging unit 72, an observation head 73, and an observation head drive unit 74. The light source unit 71 and the imaging unit 72 are arranged side by side on the base member 17. The light source unit 71 irradiates illumination light towards the observation position in response to an illumination command from the control unit 10. This observation position corresponds to the peripheral edge Ws of the substrate W, and corresponds to the position where the observation head 73 is shown by a solid line in reference numeral #401 in Figure 4.

[0059] The observation head 73 is capable of reciprocating between an observation position and a retracted position (dotted line) located radially outward from the observation position on the substrate W. An observation head drive unit 74 is connected to the observation head 73. The observation head drive unit 74 is mounted on the base member 17. In response to a head movement command from the control unit 10, the observation head drive unit 74 moves the observation head 73 back and forth.

[0060] More specifically, when the substrate W is not being observed, the observation head drive unit 74 moves the observation head 73 to a retracted position for positioning. As a result, the observation head 73 is away from the transport path of the substrate W, effectively preventing it from interfering with the substrate W as it is being transported into and out of the chamber 11. On the other hand, when the substrate W is being observed, the observation head drive unit 74 moves the observation head 73 to the observation position in response to the substrate observation command from the control unit 10.

[0061] As shown by reference numeral #402 in Figure 4, the observation head 73 includes a diffuse illumination section 731 having a diffuse surface 731a, a guide section 732 composed of three mirror members 732a, 732b, and 732c, and a holding section 733.

[0062] The diffuse illumination unit 731 is made of, for example, PTFE (PolyTetraFluoroEthylene). The diffuse illumination unit 731 has a plate shape that extends horizontally, and a notch 7311 is formed at the end on the substrate W side. The vertical size of the notch 7311 is larger than the thickness of the substrate W, and is sized so that the substrate W does not come into contact with the notch 7311 even if it warps. When the observation head 73 is positioned at the observation position, the notch 7311 extends into the peripheral Ws of the substrate W and the region further radially inward from the peripheral Ws.

[0063] Due to the formation of the notch 7311, the diffuse illumination section 731 has an inverted C-shape when viewed from the circumferential direction of the substrate W. In addition, an inclined surface is formed along the notch 7311 in the diffuse illumination section 731. The inclined surface is a tapered surface that is finished so that it slopes in the direction in which the illumination light travels as it approaches the notch 7311.

[0064] The holding portion 733 is made of, for example, PEEK (PolyEtherEtherKetone), and has a notch similar to that of the diffuse illumination portion 731 formed at its end on the substrate W side. Furthermore, the holding portion 733 is finished in a shape that allows it to be fitted together with the diffuse illumination portion 731.

[0065] When the observation head 73 configured in this way is positioned at the observation position, the diffusion surface 731a is positioned in the illumination area of ​​the light source unit 71. In this positioning state, when the light source unit 71 is turned on by an illumination command from the control unit 10, illumination light is shone onto the illumination area. At this time, the diffusion surface 731a diffusely reflects the illumination light, illuminating the peripheral Ws of the substrate W and its adjacent areas from various directions.

[0066] The imaging unit 72 includes an observation lens system composed of an object-side telecentric lens and a CMOS (Complementary Metal-oxide Semiconductor) camera. Therefore, of the reflected light guided from the observation head 73, only the light rays parallel to the optical axis of the observation lens system are incident on the sensor surface of the CMOS camera, and an image of the peripheral Ws and adjacent regions of the substrate W is formed on the sensor surface. In this way, the imaging unit 72 images the peripheral Ws and adjacent regions of the substrate W and acquires top, side, and bottom images of the substrate W. The imaging unit 72 then transmits the image data showing these images to the control unit 10.

[0067] (Control Unit) The control unit 10 includes an arithmetic processing unit 10A, a storage unit 10B (memory), a reading unit 10C, an image processing unit 10D, a drive control unit 10E, and a communication unit 10F. The storage unit 10B is composed of a hard disk drive or the like and stores a program for the processing unit 1 to perform bevel processing.

[0068] The program is stored, for example, on a computer-readable recording medium RM (e.g., an optical disk, magnetic disk, magneto-optical disk, etc.), read from the recording medium RM by the reading unit 10C, and stored in the storage unit 10B. Furthermore, the provision of the program is not limited to the recording medium RM; for example, the program may be provided via a telecommunications line.

[0069] The image processing unit 10D performs various processing on the image captured by the substrate observation mechanism 7. The drive control unit 10E controls each drive unit of the processing unit 1. The communication unit 10F is for the calculation processing unit 10A to communicate with the substrate transport robot 111.

[0070] The arithmetic processing unit 10A is composed of a computer having a CPU (Central Processing Unit) and RAM (Random Access Memory), and controls each part of the processing unit 1 according to the program stored in the storage unit 10B, and performs bevel processing. The bevel processing by the processing unit 1 will be described below with reference to Figure 5.

[0071] (Substrate Processing Operation) Figure 5 is a flowchart showing a beveling process performed as an example of substrate processing operation by the processing unit 1 shown in Figure 2. First, the arithmetic processing unit 10A loads the substrate W (S1). Specifically, the arithmetic processing unit 10A requests the substrate transport robot 111 to load the substrate W via the communication unit 10F and waits until the unprocessed substrate W is brought into the processing unit 1 and placed on the upper surface of the spin chuck 21. Then, the substrate W is placed on the spin chuck 21. At this point, the pump 26 is stopped, and the substrate W is able to move horizontally on the upper surface of the spin chuck 21.

[0072] When the substrate W is placed on the upper surface of the spin chuck 21, the substrate transport robot 111 retracts from the processing unit 1. Subsequently, the arithmetic processing unit 10A uses the centering mechanism (not shown) provided in the substrate processing unit SP to center the substrate W. This eliminates the eccentricity of the substrate W relative to the spin chuck 21, so that the center of the substrate W coincides with the center of the spin chuck 21. After centering the substrate W, the arithmetic processing unit 10A operates the pump 26 to apply negative pressure to the spin chuck 21. As a result, the spin chuck 21 attracts and holds the substrate W from below.

[0073] Next, the calculation processing unit 10A prepares for the discharge of the processing liquid (S2). Specifically, the calculation processing unit 10A gives a downward command to the lifting mechanism (not shown). In response, the lifting mechanism lowers the lower sealing cup member 61, nozzle head 56, beam member 49, and upper surface protection heating mechanism 4 together. During this downward movement, the upper cup 33 is connected to the lower cup 32. This forms the rotating cup portion 31.

[0074] In this state, the lower surface of the disc portion 42 covers the upper surface area of ​​the substrate W, excluding the peripheral edge Ws, from above. In addition, the processing liquid discharge nozzles 51A to 51C are positioned within the notch 425 of the disc portion 42 with their discharge ports facing the upper surface of the peripheral edge Ws on the substrate W.

[0075] After the processing liquid discharge nozzles 51A to 51C are positioned, the calculation processing unit 10A gives a rotation command to the motor 23, and the spin chuck 21 and rotating cup section 31 that hold the substrate W start to rotate. The rotation speed of the substrate W and the rotating cup section 31 is set to, for example, 1800 revolutions per minute.

[0076] Furthermore, the arithmetic processing unit 10A controls the heater drive unit 422 to raise the internal heater 421 to the desired temperature. The arithmetic processing unit 10A also issues a heating gas supply command to the heating gas supply unit 47. As a result, nitrogen gas heated by the heater 471, i.e., the heating gas, is pumped from the heating gas supply unit 47 towards the substrate W. This heating gas is heated by the ribbon heater 48 as it passes through the piping 46.

[0077] As a result, the heating gas is supplied to the top surface protection heating mechanism 4 while preventing a temperature drop during gas supply via the piping 46. In the top surface protection heating mechanism 4, the heating gas is heated by the internal heater 421. The heated gas is then discharged towards the space sandwiched between the substrate W and the disc portion 42 near the peripheral edge Ws of the substrate W. Therefore, the upper surface of the peripheral edge Ws of the substrate W is heated intensively.

[0078] Furthermore, the peripheral Ws of the substrate W are also heated by the internal heater 421. As a result, the temperature of the peripheral Ws of the substrate W rises over time, reaching a temperature suitable for beveling, for example, 90°C. In addition, the temperature of areas other than the peripheral Ws also rises to approximately the same temperature due to the heat from the internal heater 421. In other words, in this embodiment, the in-plane temperature of the upper surface of the substrate W is approximately uniform.

[0079] Furthermore, the arithmetic processing unit 10A moves the processing liquid discharge nozzles 51A to 51D to the outermost position in the radial direction of the substrate W within the range in which the processing liquid discharge nozzles 51A to 51D can move, at any timing while the processing in step S2 is being performed. At this time, the discharge ports of the processing liquid discharge nozzles 51A to 51D are positioned between the substrate W and the upper cup 33 in a plan view from vertically above.

[0080] The arithmetic processing unit 10A controls the processing liquid supply unit 52 for any period of time while the processing in step S2 is being performed, to discharge the processing liquid from the processing liquid discharge nozzles 51A to 51D. This allows the old processing liquid and air bubbles in the processing liquid discharge nozzles 51A to 51D to be discharged outside the nozzles 51A to 51D without coming into contact with the substrate W. Here, the period for discharging the processing liquid is, for example, 5 seconds.

[0081] Next, the arithmetic processing unit 10A processes the peripheral edge Ws of the substrate W with the processing liquid (S3). Specifically, the arithmetic processing unit 10A moves the processing liquid discharge nozzles 51A to 51C to a position where the discharge ports of the processing liquid discharge nozzles 51A to 51C are located above the peripheral edge Ws of the substrate W. The arithmetic processing unit 10A also moves the processing liquid discharge nozzle 51D to a position where the discharge port of the processing liquid discharge nozzle 51D is located below the peripheral edge Ws of the substrate W.

[0082] The processing unit 10A then controls the processing liquid supply unit 52 to supply processing liquid to the processing liquid discharge nozzles 51A to 51D. Specifically, a stream of processing liquid is discharged from the processing liquid discharge nozzles 51A to 51C so as to hit the upper surface of the peripheral edge Ws on the substrate W, and a stream of processing liquid is discharged from the processing liquid discharge nozzle 51D so as to hit the lower surface of the peripheral edge Ws on the substrate W. This performs beveling on the peripheral edge Ws of the substrate W.

[0083] Furthermore, while the processing in step S3 is being performed, the arithmetic processing unit 10A controls the heater drive unit 422 to continue driving the internal heater 421. Alternatively, the arithmetic processing unit 10A may discharge the processing liquid onto the upper surface of the peripheral edge Ws using the processing liquid discharge nozzles 51A to 51C, instead of discharging the processing liquid onto the lower surface of the peripheral edge Ws. Alternatively, the arithmetic processing unit 10A may discharge the processing liquid onto the lower surface of the peripheral edge Ws using the processing liquid discharge nozzle 51D, instead of discharging the processing liquid onto the upper surface of the peripheral edge Ws.

[0084] Then, when the arithmetic processing unit 10A detects the elapsed processing time required for the beveling of the substrate W, it terminates the surface treatment of the substrate W (S5). Specifically, the arithmetic processing unit 10A issues a supply stop command to the processing liquid supply unit 52 and stops the discharge of the processing liquid.

[0085] Subsequently, the arithmetic processing unit 10A issues a command to stop supplying the heating gas to the heating gas supply unit 47, stopping the supply of heating gas from the heating gas supply unit 47 to the substrate W. The arithmetic processing unit 10A also issues a command to stop rotation to the motor 23, stopping the rotation of the spin chuck 21 and the rotating cup unit 31. Furthermore, the arithmetic processing unit 10A controls the heater drive unit 422 to stop the internal heater 421.

[0086] Next, the arithmetic processing unit 10A observes the peripheral Ws of the substrate W to inspect the result of the beveling process (S6). Specifically, the arithmetic processing unit 10A positions the upper cup 33 in a retracted position, similar to when the substrate W is loaded, to form a transport space. Then, the arithmetic processing unit 10A controls the observation head drive unit 74 to bring the observation head 73 closer to the substrate W.

[0087] The processing unit 10A illuminates the peripheral Ws of the substrate W via the observation head 73 by turning on the light source unit 71. The imaging unit 72 receives the reflected light reflected from the peripheral Ws and adjacent areas and images the peripheral Ws and adjacent areas. In other words, while the substrate W is rotating around the rotation axis AX, the imaging unit 72 acquires a peripheral image of the peripheral Ws along the rotation direction of the substrate W from the multiple images of the peripheral Ws acquired by the imaging unit 72.

[0088] Then, the arithmetic processing unit 10A controls the observation head drive unit 74 to retract the observation head 73 from the substrate W. In parallel with this, the arithmetic processing unit 10A checks whether the beveling process has been performed well, based on the captured peripheral Ws and adjacent region images, i.e., the peripheral image. In this embodiment, as an example of this check, the processing width processed by the processing liquid from the edge face of the substrate W toward the center of the substrate W is checked from the peripheral image.

[0089] After inspection, the arithmetic processing unit 10A sends an unloading request for the substrate W to the substrate transport robot 111 via the communication unit 10F, and the processed substrate W is discharged from the processing unit 1 (S7). This series of steps is repeated.

[0090] (Processing to change the discharge position) As described above, the calculation processing unit 10A continues to drive the internal heater 421 by controlling the drive of the heater drive unit 422 while the processing of step S3 is being performed. At this time, the substrate W may warp due to the difference in thermal expansion coefficient between the film formed on the substrate W and the substrate W.

[0091] Figure 6 is a schematic diagram showing a flat, unwarped substrate W and a warped substrate W. Specifically, reference numeral #601 in Figure 6 represents the unwarped substrate W, and reference numeral #602 in Figure 6 represents the warped substrate W. As shown in reference numeral #601 in Figure 6, an unwarped substrate W may be indicated by W0, and a warped substrate W may be indicated by W2.

[0092] As shown in Figure 6, consider the case where the surface of a substrate W is treated by discharging a processing liquid from processing liquid discharge nozzles 51A to 51C (processing liquid discharge nozzles 51B and 51C are not shown) toward the peripheral edge Ws of the substrate W. As shown by reference numeral #601 in Figure 6, when the substrate W is not warped, the point of contact (arrival point) of the processing liquid on the substrate W1 is indicated by P1. That is, the contact point P1 is the desired contact point. Also, as shown by reference numeral #602 in Figure 6, when the substrate W is warped, the point of contact of the processing liquid on the substrate W2 is indicated by P2.

[0093] As shown by reference numerals #601 and #602 in Figure 6, the liquid application positions P1 and P2 are different. In other words, the warping of the substrate W changes the application position of the processing liquid to the substrate W. Furthermore, the application position of the processing liquid to the substrate W differs depending on the degree of warping of the substrate W. Specifically, as the degree of warping of the substrate W increases, the liquid application position P2 in the radial direction of the substrate W becomes closer to the peripheral edge Ws of the substrate W than the liquid application position P1.

[0094] Figure 7 is a schematic diagram showing the relationship between the amount of warping of the substrate W and the amount of displacement of the liquid application position. In Figure 7, the unwarped substrate W1 is shown by a dashed line, and the warped substrate W2 is shown by a solid line. Also in Figure 7, the difference between the edge of the unwarped substrate W1 and the edge of the warped substrate W2 is defined as the amount of warping ΔZ of the substrate W. Since the actual amount of warping ΔZ of the substrate W is minute, and the liquid application positions P1 and P2 of the substrate W are at the peripheral Ws close to the edge of the substrate W, the amount of warping at the liquid application positions P1 and P2 of the substrate W can be considered to be about the same as ΔZ.

[0095] Furthermore, in Figure 7, the difference between the liquid application position P1 and the liquid application position P2 on the substrate W is defined as the displacement amount ΔC of the liquid application position. Also, the angle between the direction of the processing liquid onto the substrate W and the substrate W is defined as ψ. That is, the angle ψ is the inclination of the discharge direction of the processing liquid discharge nozzles 51A to 51C relative to the substrate W, and is a preset value (set value).

[0096] Referring to Figure 7, it can be seen that the following equation (1) holds: ΔZ / ΔC = tanψ ... (1). Therefore, the displacement ΔC can be determined based on the warp amount ΔZ, the inclination ψ, and the above equation (1). Then, as shown by the dashed line in Figure 7, by changing the discharge position (injection position) of the processing liquid discharge nozzles 51A to 51C toward the center of the substrate W by a displacement of ΔC, the processing liquid can reach the desired liquid contact position P1 on the substrate W.

[0097] Figure 8 is a flowchart showing the ejection position change process that is performed while the process of step S3 shown in Figure 5 is being carried out. First, the arithmetic processing unit 10A operates the substrate observation mechanism 7 (S11). Specifically, the arithmetic processing unit 10A controls the observation head drive unit 74 to move the observation head 73 to the observation position and turns on the light source unit 71 and the imaging unit 72. Next, the arithmetic processing unit 10A controls the image processing unit 10D to process the image captured by the substrate observation mechanism 7 and measure the amount of warpage ΔZ at the edge of the substrate W (S12).

[0098] Next, the calculation processing unit 10A calculates the displacement amount ΔC using the measured warp amount ΔZ, the set value of the inclination ψ, and the above equation (1) (S13). Next, the calculation processing unit 10A controls the drive control unit 10E to move the discharge position of the processing liquid discharge nozzles 51A to 51C toward the center of the substrate W by a displacement amount ΔC (S14). These steps are repeated.

[0099] Therefore, by performing the discharge position modification process shown in Figure 8, the following effects can be obtained. In other words, even if the surface treatment time is extended, the boundary between the treated and untreated areas can be made uniform.

[0100] (Modification 1) When the processing liquid is discharged to the lower surface of the peripheral edge Ws using the processing liquid discharge nozzle 51D shown in Figure 2, if the outer periphery of the substrate W bends downward as shown in Figure 6, the point where the processing liquid lands on the substrate W will shift towards the center of the substrate W. In this case, in step S14 shown in Figure 8, the calculation processing unit 10A can control the drive control unit 10E to move the discharge position of the processing liquid discharge nozzle 51D outward from the substrate W by a displacement amount ΔC.

[0101] (Modification 2) In some cases, the outer periphery of the substrate W may bend upward due to heating of the substrate W. In this case, the point where the processing liquid is applied to the substrate W will shift towards the center of the substrate W. In this case, in step S14 shown in Figure 8, the calculation processing unit 10A can control the drive control unit 10E to move the discharge positions of the processing liquid discharge nozzles 51A to 51C outward by a displacement amount ΔC, and the discharge position of the processing liquid discharge nozzle 51D inward by a displacement amount ΔC.

[0102] (Modification 3) The processing unit 1 may further include a distance sensor. The distance sensor is a sensor capable of measuring the distance between the distance sensor and the peripheral edge Ws of the substrate W. This distance is the distance along the vertical direction. In this case, in the ejection position change process shown in Figure 8, the amount of warpage ΔZ of the peripheral edge Ws of the substrate W can be determined by using the distance sensor instead of the substrate observation mechanism 7.

[0103] (Modification 4) Figure 9 is a modified version of the processing unit 1 shown in Figure 2, and is a schematic diagram showing components added to the processing unit 1 shown in Figure 2. As shown in Figure 9, the processing unit 1 may include a mirror member 81 and a camera 82 for photographing the peripheral edge Ws of the substrate W from directly above. The mirror member 81 is provided directly above the peripheral edge Ws of the substrate W, and the camera 82 is provided outside and below the substrate W. The mirror member 81 and the camera 82 are positioned so that they can photograph the peripheral edge Ws of the substrate W from directly above.

[0104] Figure 10 shows an example of an image captured by the camera 82 shown in Figure 9. As shown in Figure 10, the processing liquid discharged from the processing liquid discharge nozzles 51A to 51C (processing liquid discharge nozzles 51B and 51C are not shown) spreads when it reaches the peripheral Ws of the substrate W, and spreads further along the rotation of the substrate W. That is, the leading edge of the processing liquid spreading on the substrate W becomes the liquid contact point. The processing unit 1 can detect the liquid contact point by processing the image captured by the camera 82 and detecting the leading edge of the processing liquid spreading on the substrate W.

[0105] In Figure 10, the processing liquid spreading on the non-warped substrate W1 is shown by a dashed line, and the processing liquid spreading on the warped substrate W2 is shown by a solid line. At the start of step S3 shown in Figure 5, the processing unit 1 detects the liquid application position P1 on the non-warped substrate W1. Next, in step S3 shown in Figure 5, the processing unit 1 detects the liquid application position P2 on the warped substrate W2 and calculates the amount of displacement ΔC of the liquid application position P2 relative to the liquid application position P1. Then, based on the calculated displacement amount ΔC, the processing unit 1 moves the processing liquid discharge nozzles 51A to 51C so that the processing liquid reaches the original liquid application position P1.

[0106] [Example of implementation by software] The functions of the control unit 10 (hereinafter referred to as "device") can be realized by a program that causes a computer to function as the device, and by a program that causes a computer to function as each control block of the device (particularly the arithmetic processing unit 10A, the image processing unit 10D, and the drive control unit 10E).

[0107] In this case, the device includes, as hardware for executing the program, at least one control device (e.g., a processor) and a computer having at least one storage device (e.g., memory) that stores information indicating the control operation of the control device. The control device works in cooperation with the storage device to execute the program, thereby realizing each of the functions described in the above embodiment.

[0108] The above program may be recorded on one or more computer-readable recording media (e.g., recording media RM), not temporarily. This recording media may or may not be provided by the above device. In the latter case, the program may be supplied to the above device via any wired or wireless transmission medium.

[0109] Furthermore, some or all of the functions of each of the above control blocks can also be realized by logic circuits. For example, an integrated circuit in which logic circuits that function as each of the above control blocks are formed is also included in the scope of the present invention.

[0110] [Additional Notes] The present invention is not limited to the embodiments described above, and various modifications are possible within the scope of the claims. Embodiments obtained by appropriately combining the multiple technical means disclosed in the embodiments are also included in the technical scope of the present invention.

[0111] For example, in this embodiment, the substrate is processed by discharging a processing liquid onto the substrate W, but it is not limited to this, and can also be applied when the substrate is processed by emitting any processing material such as gas, solid, light, or laser onto the substrate W.

[0112] Furthermore, in the above embodiment, the liquid contact position is changed by changing the discharge position of the processing liquid discharge nozzles 51A to 51C, but the liquid contact position may also be changed by changing the discharge direction (injection direction) of the processing liquid discharge nozzles 51A to 51C.

[0113] [Summary] A substrate processing method according to one aspect of the present disclosure is a substrate processing method that injects a processing material toward the outer periphery of a rotating substrate, wherein the amount of displacement by which the actual arrival position of the processing material reaches the substrate is shifted from a predetermined arrival position due to heating of the substrate is determined, and the injection of the processing material is controlled according to the amount of displacement so that the actual arrival position becomes the predetermined arrival position.

[0114] In a substrate processing method according to one aspect of the present disclosure, determining the amount of displacement may involve measuring the amount of warping of the flat substrate due to heating at a certain position on the outer periphery of the substrate, and determining the amount of displacement from the amount of warping.

[0115] In a substrate processing method according to one aspect of the present disclosure, the amount of warping may be the amount of warping at the edge of the substrate.

[0116] In a substrate processing method according to one aspect of this disclosure, the amount of displacement may be determined by photographing the outer periphery of the substrate, including the predetermined arrival position and the actual arrival position.

[0117] In a substrate processing method according to one aspect of this disclosure, the act of taking photographs may be to photograph the outer periphery of the substrate from directly above.

[0118] In a substrate processing method according to one aspect of the present disclosure, controlling the injection of the processing material may involve changing the injection position of the processing material and / or changing the injection direction of the processing material.

[0119] A substrate processing apparatus according to another aspect of the present disclosure is a substrate processing apparatus for injecting a processing material toward the outer periphery of a rotating substrate, comprising: a holding table for holding the substrate; a heater for heating the substrate; an injection mechanism for injecting the processing material; a control unit for controlling the injection mechanism; and a memory for storing at least information indicating the control operation of the control unit, wherein the control unit cooperates with the memory to determine the amount of deviation that causes the actual arrival position of the processing material injected by the injection mechanism to shift from a predetermined arrival position due to heating of the substrate by the heater, and controls the injection mechanism according to the amount of deviation so that the actual arrival position becomes the predetermined arrival position.

[0120] 1 Processing unit (substrate processing device) 4 Top surface protection heating mechanism (heater) 5 Discharge mechanism (injection mechanism) 7 Substrate observation mechanism 10 Control unit (control unit) 10A Calculation processing unit 10B Storage unit 10D Image processing unit 21 Spin chuck (holding table) 81 Mirror member 82 Camera W, W1, W2 Substrate Ws Peripheral edge (outer periphery)

Claims

1. A substrate processing method for injecting a processing material toward the outer periphery of a rotating substrate, wherein the amount of displacement of the actual arrival position of the processing material to the substrate due to heating of the substrate is determined, and the injection of the processing material is controlled according to the amount of displacement so that the actual arrival position becomes the predetermined arrival position.

2. The substrate processing method according to claim 1, wherein determining the amount of displacement involves measuring the amount of warping of the flat substrate due to heating at a certain position on the outer periphery of the substrate, and determining the amount of displacement from the amount of warping.

3. The substrate processing method according to claim 2, wherein the amount of warping is the amount of warping at the edge of the substrate.

4. The substrate processing method according to claim 1, wherein the amount of displacement is determined by photographing the outer periphery of the substrate, including the predetermined destination and the actual destination.

5. The substrate processing method according to claim 4, wherein the act of taking the photograph is to photograph the outer periphery of the substrate from directly above.

6. The substrate processing method according to any one of claims 1 to 5, wherein controlling the injection of the processing material is to change the injection position of the processing material and / or to change the injection direction of the processing material.

7. A substrate processing apparatus for injecting a processing material toward the outer periphery of a rotating substrate, comprising: a holding table for holding the substrate; a heater for heating the substrate; an injection mechanism for injecting the processing material; a control unit for controlling the injection mechanism; and a memory for storing at least information indicating the control operation of the control unit, wherein the control unit cooperates with the memory to determine the amount of deviation that causes the actual arrival position of the processing material injected by the injection mechanism to shift from a predetermined arrival position due to heating of the substrate by the heater, and controls the injection mechanism according to the amount of deviation so that the actual arrival position becomes the predetermined arrival position.

Images