Semiconductor device

Abstract

This semiconductor device comprises a semiconductor element, a first conductive member, and a second conductive member. The semiconductor element has a first electrode and a second electrode positioned on the same side in a first direction. The first conductive member overlaps the first electrode when viewed in the first direction and is electrically connected to the first electrode. The second conductive member overlaps the second electrode when viewed in the first direction and is electrically connected to the second electrode. When viewed in the first direction, the second conductive member overlaps the first conductive member.

Description

Semiconductor device

[0001] The present disclosure relates to a semiconductor device.

[0002] Patent Document 1 discloses an example of a semiconductor device including a lateral-structure semiconductor element (HEMT). The semiconductor element is bonded to a first lead. The semiconductor element has a first electrode corresponding to a source and a third electrode corresponding to a drain. The first electrode is electrically connected to a second lead adjacent to the first lead via a wire. The third electrode is electrically connected to a third lead adjacent to the first lead via a wire.

[0003] Here, in the semiconductor device disclosed in Patent Document 1, the second lead and the third lead are located on opposite sides of each other with the first lead interposed therebetween in a plan view. For this reason, the configuration of the semiconductor device has a problem that the dimension in plan view becomes relatively large.

[0004] Japanese Patent Application Laid-Open No. 2020-115524

[0005] [Summary] An object of the present disclosure is to provide an improved semiconductor device compared to conventional ones. In particular, in view of the above circumstances, an object of the present disclosure is to improve the degree of freedom in arrangement of two different conductive members each conducting to a semiconductor element, while reducing the size of the device in plan view.

[0006] A semiconductor device provided by a first aspect of the present disclosure includes: a semiconductor element having a first electrode and a second electrode located on one side in a first direction; a first conductive member overlapping the first electrode when viewed in the first direction and conducting to the first electrode; and a second conductive member overlapping the second electrode when viewed in the first direction and conducting to the second electrode. When viewed in the first direction, the second conductive member overlaps the first conductive member.

[0007] Other features and advantages of the present disclosure will become more apparent from the detailed description given below based on the accompanying drawings.

[0008] Figure 1 is a perspective view of a semiconductor device according to the first embodiment of this disclosure, with the sealing resin not shown. Figure 2 is a plan view of the semiconductor device shown in Figure 1, with the sealing resin visible. Figure 3 is a bottom view of the semiconductor device shown in Figure 1. Figure 4 is a front view of the semiconductor device shown in Figure 1. Figure 5 is a right side view of the semiconductor device shown in Figure 1. Figure 6 is a left side view of the semiconductor device shown in Figure 1. Figure 7 is a cross-sectional view taken along the line VII-VII in Figure 2. Figure 8 is a cross-sectional view taken along the line VIII-VIII in Figure 2. Figure 9 is a cross-sectional view taken along the line IX-IX in Figure 2. Figure 10 is a cross-sectional view taken along the line X-X in Figure 2. Figure 11 is a perspective view of a semiconductor device according to the second embodiment of this disclosure, with the sealing resin not shown. Figure 12 is a plan view of the semiconductor device shown in Figure 11, with the sealing resin visible. Figure 13 is a cross-sectional view taken along the line XIII-XIII in Figure 12. Figure 14 is a cross-sectional view taken along the line XIV-XIV in Figure 12. Figure 15 is a perspective view of a semiconductor device according to the third embodiment of the present disclosure, with the sealing resin not shown. Figure 16 is a plan view of the semiconductor device shown in Figure 15, with the sealing resin visible. Figure 17 is a bottom view of the semiconductor device shown in Figure 15. Figure 18 is a cross-sectional view taken along the line XVIII-XVIII in Figure 16. Figure 19 is a cross-sectional view taken along the line XIX-XIX in Figure 16. Figure 20 is a cross-sectional view taken along the line XX-XX in Figure 16. Figure 21 is a plan view of a semiconductor device according to the fourth embodiment of the present disclosure, with the sealing resin visible. Figure 22 is a cross-sectional view taken along the line XXII-XXII in Figure 21. Figure 23 is a cross-sectional view taken along the line XXIII-XXIII in Figure 21.

[0009] [Detailed Explanation] Details of this disclosure will be explained with reference to the attached drawings.

[0010] First Embodiment: A semiconductor device A10 according to the first embodiment of the present disclosure will be described based on Figures 1 to 10. Generally, the semiconductor device A10 is used in power conversion circuits such as DC-DC converters and inverters. The package type of the semiconductor device A10 is QFN (Quad Flat Non-leaded). The semiconductor device A10 comprises a semiconductor element 10, a die pad 20, a first conductive member 61, a second conductive member 62, a third lead 23, a third relay member 33, and a sealing resin 40. The first conductive member 61 includes a first lead 21 and a first relay member 31. The second conductive member 62 includes a second lead 22 and a second relay member 32. Here, for ease of understanding, Figure 2 shows the sealing resin 40 being transparent. In Figure 2, the transparent sealing resin 40 is shown by dashed lines.

[0011] In describing the semiconductor device A10, for convenience, the direction normal to the mounting surface 20A of the die pad 20, which will be described later, will be referred to as the "first direction z". The direction perpendicular to the first direction z will be referred to as the "second direction x". The direction perpendicular to both the first direction z and the second direction x will be referred to as the "third direction y".

[0012] As shown in Figures 7 to 10, the sealing resin 40 covers the semiconductor element 10, the first relay member 31, the second relay member 32, and the third relay member 33. Furthermore, the sealing resin 40 covers a portion of each of the die pad 20, the first lead 21, the second lead 22, and the third lead 23. The sealing resin 40 has electrical insulating properties. The sealing resin 40 is made of a material including, for example, a black epoxy resin. The sealing resin 40 has a top surface 41, a bottom surface 42, a first side surface 43, a second side surface 44, a third side surface 45, and a fourth side surface 46.

[0013] As shown in Figures 7 to 10, the top surface 41 faces the same side as the mounting surface 20A of the die pad 20, which will be described later, in the first direction z. The bottom surface 42 faces the opposite side from the top surface 41 in the first direction z.

[0014] As shown in Figure 3, the first side surface 43 and the second side surface 44 face opposite each other in the second direction x. The first side surface 43 and the second side surface 44 are located on opposite sides of each other with respect to the die pad 20. The third side surface 45 and the fourth side surface 46 face opposite each other in the third direction y. The third side surface 45 and the fourth side surface 46 are located on opposite sides of each other with respect to the die pad 20.

[0015] As shown in Figure 2, the die pad 20 is located on one side of the first lead 21, second lead 22, and third lead 23 in the second direction x. The die pad 20, together with the first lead 21, second lead 22, and third lead 23, is obtained from a common lead frame. Therefore, the die pad 20, the first lead 21, the second lead 22, and the third lead 23 are obtained from the same metal material. As shown in Figures 2 and 3, the die pad 20 has a mounting surface 20A, a back surface 20B, a mounting portion 201, an overhanging portion 202, and a plurality of suspension portions 203. The mounting surface 20A and the back surface 20B face opposite each other in the first direction z. The mounting surface 20A faces the semiconductor element 10. As shown in Figure 3, the back surface 20B is exposed from the bottom surface 42 of the sealing resin 40. Alternatively, the entire back surface 20B may be covered by the sealing resin 40.

[0016] As shown in Figures 7, 8, and 10, the mounting portion 201 includes a mounting surface 20A and a back surface 20B. The mounting portion 201 mounts the semiconductor element 10. The overhang portion 202 extends from the mounting portion 201 in a direction perpendicular to the first direction z. The overhang portion 202 includes the mounting surface 20A and is separated from the bottom surface 42 of the sealing resin 40. As shown in Figure 2, in view of the first direction z, the overhang portion 202 surrounds the mounting portion 201. As a result, in view of the first direction z, the mounting surface 20A overlaps with the entire back surface 20B. The overhang portion 202 is sandwiched between the sealing resin 40 in the first direction z. Each of the plurality of suspension portions 203 extends from the overhang portion 202 in a third direction y. Each of the plurality of suspension portions 203 has an end surface 203A facing the third direction y. As shown in Figures 5 and 6, each end face 203A of the multiple suspension portions 203 is exposed from either the third side surface 45 or the fourth side surface 46 of the sealing resin 40.

[0017] As shown in Figures 7 to 10, the semiconductor element 10 is conductively bonded to the mounting surface 20A of the die pad 20 via a bonding layer 19. The bonding layer 19 is, for example, solder. The semiconductor element 10 is a transistor (switching element) mainly used for power conversion. The semiconductor element 10 is made of a material including, for example, a nitride semiconductor. In semiconductor device A10, the semiconductor element 10 is a HEMT (High Electron Mobility Transistor) made of a material including gallium nitride (GaN).

[0018] As shown in Figures 2 and 10, the semiconductor element 10 has a first electrode 11, a second electrode 12, a third electrode 13, a fourth electrode 14, and a fifth electrode 15. The first electrode 11, the second electrode 12, the third electrode 13, the fourth electrode 14, and the fifth electrode 15 are located on the side opposite to the mounting surface 20A of the die pad 20 in the first direction z. Each of the first electrode 11, the second electrode 12, the third electrode 13, the fourth electrode 14, and the fifth electrode 15 extends in the second direction x. The first electrode 11, the second electrode 12, the third electrode 13, the fourth electrode 14, and the fifth electrode 15 are arranged along the third direction y.

[0019] As shown in Figures 2 and 10, the second electrode 12 is located between the first electrode 11 and the third electrode 13 in the third direction y. The fourth electrode 14 is located on the opposite side of the third electrode 13 from the second electrode 12 in the third direction y. The fifth electrode 15 is located on the opposite side of the first electrode 11 from the second electrode 12 in the third direction y. The first electrode 11 and the third electrode 13 correspond to the source of the semiconductor element 10. Therefore, in the semiconductor element 10, current flows from the inside of the semiconductor element 10 toward the first electrode 11 and the third electrode 13, respectively. The second electrode 12, the fourth electrode 14, and the fifth electrode 15 correspond to the drains of the semiconductor element 10. Therefore, in the semiconductor element 10, current flows from the second electrode 12, the fourth electrode 14, and the fifth electrode 15 toward the inside of the semiconductor element 10.

[0020] As shown in Figures 2 and 9, the semiconductor element 10 has a control electrode 16. The control electrode 16 is located on the same side as the first electrode 11, second electrode 12, third electrode 13, fourth electrode 14, and fifth electrode 15 in the first direction z. The control electrode 16 corresponds to the gate of the semiconductor element 10. Therefore, a gate voltage for driving the semiconductor element 10 is applied to the control electrode 16. Viewed in the first direction z, the control electrode 16 is located closest to the third lead 23.

[0021] As shown in Figure 2, the first lead 21 is located on one side of the die pad 20 in the second direction x. As shown in Figure 3, the first lead 21 is located closer to the first side surface 43 than to the second side surface 44 of the sealing resin 40.

[0022] As shown in Figures 2 and 3, the first lead 21 has a first terminal portion 211, a first protruding portion 212, and a suspension portion 213. The first terminal portion 211 has a mounting surface 211A and a plurality of side surfaces 211B. The mounting surface 211A faces the same side as the bottom surface 42 of the sealing resin 40 in a first direction z. The mounting surface 211A is exposed from the bottom surface 42. As shown in Figure 4, each of the plurality of side surfaces 211B faces the same side as the first side surface 43 of the sealing resin 40 in a second direction x. Each of the plurality of side surfaces 211B is exposed from the first side surface 43. The first protruding portion 212 protrudes from the first terminal portion 211 in a direction perpendicular to the first direction z. The first protruding portion 212 is connected to the protruding portion 202 of the die pad 20. The first protruding portion 212 is separated from the bottom surface 42. The first protruding portion 212 is sandwiched between the sealing resin 40 in the first direction z. The suspension portion 213 extends from the first protruding portion 212 in the third direction y. The suspension portion 213 has an end face 213A facing the third direction y. As shown in Figure 6, the end face 213A is exposed from the fourth side surface 46 of the sealing resin 40.

[0023] As shown in Figure 2, the second lead 22 is located on the same side as the first lead 21 with respect to the die pad 20 in the second direction x. The second lead 22 is located next to the first lead 21 in the third direction y.

[0024] As shown in Figures 2 and 3, the second lead 22 has a second terminal portion 221 and a second protruding portion 222. The second terminal portion 221 has a mounting surface 221A and a plurality of side surfaces 221B. The mounting surface 221A faces the same side as the bottom surface 42 of the sealing resin 40 in the first direction z. The mounting surface 221A is exposed from the bottom surface 42. As shown in Figure 4, each of the plurality of side surfaces 221B faces the same side as the first side surface 43 of the sealing resin 40 in the second direction x. Each of the plurality of side surfaces 221B is exposed from the first side surface 43. The second protruding portion 222 extends from the second terminal portion 221 in a direction perpendicular to the first direction z. The second protruding portion 222 is separated from the bottom surface 42. The second protruding portion 222 is sandwiched in the sealing resin 40 in the first direction z.

[0025] As shown in Figure 2, the third lead 23 is located on the same side as the first lead 21 with respect to the die pad 20 in the second direction x. The third lead 23 is located on the opposite side of the first lead 21 with respect to the second lead 22 in the third direction y.

[0026] As shown in Figures 2 and 3, the third lead 23 has a third terminal portion 231, a third protruding portion 232, and a suspension portion 233. The third terminal portion 231 has a mounting surface 231A and a side surface 231B. The mounting surface 231A faces the same side as the bottom surface 42 of the sealing resin 40 in the first direction z. The mounting surface 231A is exposed from the bottom surface 42. As shown in Figure 4, the side surface 231B faces the same side as the first side surface 43 of the sealing resin 40 in the second direction x. The side surface 231B is exposed from the first side surface 43. The third protruding portion 232 protrudes from the third terminal portion 231 in a direction perpendicular to the first direction z. The third protruding portion 232 is separated from the bottom surface 42. The third protruding portion 232 is sandwiched in the sealing resin 40 in the first direction z. The suspension portion 233 extends from the third protruding portion 232 in the third direction y. The suspension portion 233 has an end face 233A facing the third direction y. As shown in Figure 5, the end face 233A is exposed from the third side surface 45 of the sealing resin 40.

[0027] As shown in Figures 2, 7, and 10, the first relay member 31 is electrically bonded to each of the first electrode 11 and the third electrode 13 via a bonding layer 39. The bonding layer 39 is, for example, solder. Therefore, the first relay member 31 overlaps each of the first electrode 11 and the third electrode 13 when viewed in the first direction z, and is electrically connected to each of the first electrode 11 and the third electrode 13. The first relay member 31 is a metal clip.

[0028] As shown in Figure 2, the first relay member 31 has a first base portion 311, two first connecting portions 312, and a suspension portion 313. The first base portion 311 is located on the side where the first lead 21 is located, with reference to the two first connecting portions 312 in the second direction x. Viewed in the first direction z, the first base portion 311 overlaps the semiconductor element 10. In addition, depending on the size of the semiconductor element 10, the first base portion 311 may not overlap the semiconductor element 10 when viewed in the first direction z. As shown in Figure 7, the first base portion 311 is conductively bonded to the first terminal portion 211 and the first protruding portion 212 of the first lead 21 via a bonding layer 39. As a result, the first electrode 11 and the third electrode 13 of the semiconductor element 10 are electrically connected to the first lead 21.

[0029] As shown in Figures 2 and 7, the two first connection portions 312 are connected to the first base portion 311. The two first connection portions 312 are separated from each other in the third direction y. Viewed in the first direction z, each of the two first connection portions 312 extends in the second direction x. As shown in Figure 10, the two first connection portions 312 are electrically bonded individually to the first electrode 11 and the third electrode 13 of the semiconductor element 10 via the bonding layer 39.

[0030] As shown in Figure 2, the suspension portion 313 extends from the first base portion 311 in the third direction y. The suspension portion 313 has an end face 313A facing the third direction y. As shown in Figure 6, the end face 313A is exposed from the fourth side surface 46 of the sealing resin 40.

[0031] As shown in Figures 2, 8, and 10, the second relay member 32 is electrically bonded to each of the second electrode 12, the fourth electrode 14, and the fifth electrode 15 via a bonding layer 39. Therefore, the second relay member 32 overlaps each of the second electrode 12, the fourth electrode 14, and the fifth electrode 15 when viewed in the first direction z, and is electrically connected to each of the second electrode 12, the fourth electrode 14, and the fifth electrode 15. The second relay member 32 is a metal clip.

[0032] As shown in Figure 2, the second relay member 32 has a second base 321, three second connection portions 322, and a suspension portion 323. The second base 321 is located on the side where the second lead 22 is located, with reference to the three second connection portions 322 in the second direction x. Viewed in the first direction z, the second base 321 overlaps with the semiconductor element 10 and the first base 311 of the first relay member 31. In addition, depending on the size of the semiconductor element 10, the second base 321 may not overlap with the semiconductor element 10 when viewed in the first direction z. As shown in Figure 9, the second base 321 is located on the opposite side from the die pad 20, with reference to the first base 311 in the first direction z. As shown in Figure 8, the second base 321 is conductively bonded to the second terminal portion 221 and the second extension portion 222 of the second lead 22 via a bonding layer 39. As a result, the second electrode 12, the fourth electrode 14, and the fifth electrode 15 of the semiconductor element 10 are electrically connected to the second lead 22.

[0033] As shown in Figures 2 and 8, the three second connection portions 322 are connected to the second base portion 321. The three second connection portions 322 are separated from each other in the third direction y. Viewed in the first direction z, at least a portion of each of the three second connection portions 322 extends in the second direction x. As shown in Figure 10, the three second connection portions 322 are individually conductively bonded to the second electrode 12, fourth electrode 14, and fifth electrode 15 of the semiconductor element 10 via the junction layer 39.

[0034] As shown in Figure 2, the suspension portion 323 extends from the second base portion 321 in the third direction y. In the third direction y, the suspension portion 323 is located on the side where the suspension portion 313 of the first relay member 31 is located, with reference to the second base portion 321. The suspension portion 323 has an end face 323A facing the third direction y. As shown in Figure 6, the end face 323A is exposed from the fourth side surface 46 of the sealing resin 40.

[0035] The first relay member 31 and the second relay member 32 are obtained from different lead frames. In this case, the different lead frames are made of the same metal material. However, the lead frame from which the first relay member 31 is obtained and the lead frame from which the second relay member 32 is obtained are different from the lead frame from which the die pad 20 is obtained. Alternatively, the first relay member 31 and the second relay member 32 may be obtained from the same lead frame.

[0036] In the manufacturing of the semiconductor device A10, if the first relay member 31 and the second relay member 32 are obtained from different lead frames, after mounting the semiconductor element 10 on the die pad 20, the lead frame from which the first relay member 31 is obtained is placed on top of the semiconductor element 10. Then, the lead frame from which the second relay member 32 is obtained is placed on top of the semiconductor element 10 and the lead frame from which the first relay member 31 is obtained.

[0037] In the manufacturing of the semiconductor device A10, if the first relay member 31 and the second relay member 32 are obtained from the same lead frame, the lead frame is placed on top of the semiconductor element 10 after the semiconductor element 10 has been mounted on the die pad 20.

[0038] As shown in Figure 2, the third relay member 33 is electrically connected to the control electrode 16 of the semiconductor element 10 and the third terminal portion 231 of the third lead 23. The third relay member 33 is a wire. As a result, the control electrode 16 is electrically connected to the third lead 23. Viewed in the first direction z, the third relay member 33 is separated from both the first relay member 31 and the second relay member 32.

[0039] As shown in Figures 2 and 7, the first conductive member 61 includes a first lead 21 and a first relay member 31, which are separate components. Alternatively, the first conductive member 61 may be a single component in which the first lead 21 and the first relay member 31 are integrated. As shown in Figures 2 and 8, the second conductive member 62 includes a second lead 22 and a second relay member 32, which are separate components. Alternatively, the second conductive member 62 may be a single component in which the second lead 22 and the second relay member 32 are integrated.

[0040] Next, the effects and benefits of semiconductor device A10 will be explained.

[0041] The semiconductor device A10 comprises a semiconductor element 10 having a first electrode 11 and a second electrode 12, a first conductive member 61, and a second conductive member 62. The first conductive member 61 overlaps the first electrode 11 when viewed in the first direction z and is conductive to the first electrode 11. The second conductive member 62 overlaps the second electrode 12 when viewed in the first direction z and is conductive to the second electrode 12. When viewed in the first direction z, the second conductive member 62 overlaps the first conductive member 61. By adopting this configuration, the arrangement of the first conductive member 61 and the second conductive member 62 can be more compactly integrated. Therefore, with this configuration, the semiconductor device A10 can be miniaturized in plan view while improving the degree of freedom in the arrangement of the first conductive member 61 and the second conductive member 62, each of which is conductive to the semiconductor element 10.

[0042] The first conductive member 61 includes a first lead 21 and a first relay member 31 electrically bonded to the first lead 21. The second conductive member 62 includes a second lead 22 and a second relay member 32 electrically bonded to the second lead 22. Viewed in the first direction z, the second relay member 32 overlaps the first relay member 31. By adopting this configuration, even if the shapes of the first conductive member 61 and the second conductive member 62 become more complex, the effort required to form the first conductive member 61 and the second conductive member 62 can be reduced.

[0043] The semiconductor device A10 further includes a die pad 20 on which the semiconductor element 10 is mounted. The first lead 21 and the second lead 22 are located on one side of the die pad 20 in the second direction x. By adopting this configuration, the arrangement of the first conductive member 61 and the second conductive member 62 can be more compactly integrated.

[0044] The semiconductor device A10 further includes a sealing resin 40 that covers the semiconductor element 10, the first relay member 31, and the second relay member 32. The die pad 20 is exposed from the bottom surface 42 of the sealing resin 40 facing the first direction z. By adopting this configuration, the heat dissipation performance of the semiconductor device A10 can be improved.

[0045] The sealing resin 40 has a first side surface 43 facing one side in the second direction x. Each of the first lead 21 and the second lead 22 is exposed from the bottom surface 42 and the first side surface 43 of the sealing resin 40. By adopting this configuration, when the semiconductor device A10 is mounted on a wiring substrate, the volume of solder adhering to the first lead 21 and the second lead 22 increases. This can increase the bonding strength of the semiconductor device A10 to the wiring substrate.

[0046] The semiconductor device A10 further includes a third lead 23 electrically connected to a control electrode 16 of the semiconductor element 10, and a third relay member 33 conductively bonded to the control electrode 16 and the third lead 23. When viewed in the first direction z, the third relay member 33 is spaced apart from each of the first relay member 31 and the second relay member 32. By adopting this configuration, in the manufacturing of the semiconductor device A10, after the conductive bonding of each of the first relay member 31 and the second relay member 32 is completed, the third relay member 33 can be easily conductively bonded without interfering with each of the first relay member 31 and the second relay member 32.

[0047] Second Embodiment: A semiconductor device A20 according to a second embodiment of the present disclosure will be described based on FIGS. 11 to 14. In these figures, elements that are the same as or similar to those of the aforementioned semiconductor device A10 are assigned the same reference numerals, and duplicate descriptions are omitted. Here, for convenience of understanding, FIG. 12 shows the sealing resin 40 in a transparent view. In FIG. 12, the transparent sealing resin 40 is indicated by imaginary lines.

[0048] In the semiconductor device A20, the further inclusion of a plurality of intermediates 50 and the configuration of the second relay member 32 are different from those of the semiconductor element 10.

[0049] Each of the plurality of intermediates 50 is located between the second electrode 12, the fourth electrode 14, and the fifth electrode 15 of the semiconductor element 10 and the three second connection portions 322 of the second relay member 32, as shown in FIG. 12 and FIG. 14. The plurality of intermediates 50 are conductors. The plurality of intermediates 50 contain copper, for example. Alternatively, the plurality of intermediates 50 may contain nickel (Ni). The three second connection portions 322 are individually conducted to the second electrode 12, the fourth electrode 14, and the fifth electrode 15 via the plurality of intermediates 50.

[0050] In the semiconductor device A20, the plurality of intermediates 50 are formed by, for example, any one of a first method, a second method, and a third method described below.

[0051] In the first method, the plurality of intermediates 50 are individually formed on the second electrode 12, the fourth electrode 14, and the fifth electrode 15 of the semiconductor element 10 by electrolytic plating. In this case, the three second connection portions 322 of the second relay member 32 are individually conductively bonded to the plurality of intermediates 50 via solder or the like.

[0052] In the second method, the plurality of intermediates 50 are individually formed on the three second connection portions 322 of the second relay member 32 by electrolytic plating. In this case, the second electrode 12, the fourth electrode 14, and the fifth electrode 15 of the semiconductor element 10 are individually conductively bonded to the plurality of intermediates 50 via solder or the like.

[0053] In the third method, first elements of the plurality of intermediates 50 are individually formed on the second electrode 12, the fourth electrode 14, and the fifth electrode 15 of the semiconductor element 10 by electrolytic plating. Separately, second elements of the plurality of intermediates 50 are individually formed on the three second connection portions 322 of the second relay member 32 by electrolytic plating. In this case, the second elements of the plurality of intermediates 50 are conductively bonded to the first elements of the plurality of intermediates 50 via solder or the like.

[0054] Next, the operational effects of the semiconductor device A20 will be described.

[0055] The semiconductor device A20 comprises a semiconductor element 10 having a first electrode 11 and a second electrode 12, a first conductive member 61, and a second conductive member 62. The first conductive member 61 overlaps with the first electrode 11 when viewed in the first direction z and is conductive to the first electrode 11. The second conductive member 62 overlaps with the second electrode 12 when viewed in the first direction z and is conductive to the second electrode 12. When viewed in the first direction z, the second conductive member 62 overlaps with the first conductive member 61. Therefore, with this configuration, even in the semiconductor device A20, it is possible to miniaturize the semiconductor device A20 in a plan view while improving the degree of freedom in the arrangement of the first conductive member 61 and the second conductive member 62, each of which is conductive to the semiconductor element 10. Furthermore, by having the same configuration as the semiconductor device A10, the semiconductor device A20 also exhibits the effects of the said configuration.

[0056] The semiconductor device A20 further includes a conductive intermediate 50. The intermediate 50 is located between the second electrode 12 of the semiconductor element 10 and the second relay member 32. The second relay member 32 is electrically connected to the second electrode 12 via the intermediate 50. By adopting this configuration, the conductive path length of the second relay member 32 is further shortened, and therefore, for example, the parasitic inductance in the second relay member 32 can be reduced.

[0057] Third Embodiment: A semiconductor device A30 according to the third embodiment of the present disclosure will be described based on Figures 15 to 20. In these figures, elements that are the same as or similar to those in the previously described semiconductor devices A10 and A20 are denoted by the same reference numerals, and redundant explanations are omitted. Here, for ease of understanding, Figure 16 shows the sealing resin 40 being permeable. In Figure 16, the permeable sealing resin 40 is shown by dashed lines.

[0058] In semiconductor device A30, the configuration of the semiconductor element 10, the second lead 22, the third lead 23, the first relay member 31, and the second relay member 32 differs from that of semiconductor device A20.

[0059] As shown in Figures 16 to 19, the second lead 22 is located on one side of the die pad 20 in the third direction y. As shown in Figures 17 and 18, each of the multiple sides 221B of the second terminal portion 221 of the second lead 22 faces the same side as the fourth side 46 of the sealing resin 40 in the second direction x. Each of the multiple sides 221B is exposed from the fourth side 46.

[0060] As shown in Figures 16 and 17, the third lead 23 is located on the same side as the second lead 22 with respect to the die pad 20 in the third direction y. The third lead 23 is located next to the second lead 22 in the second direction x. Alternatively, by rotating the semiconductor element 10 180° around the first direction z and mounting it on the die pad 20, the third lead 23 may be located on the same side as the first lead 21 with respect to the die pad 20 in the second direction x.

[0061] As shown in Figure 17, the side surface 231B of the third terminal portion 231 of the third lead 23 faces the same side as the fourth side surface 46 of the sealing resin 40 in the second direction x. Side surface 231B is exposed from the fourth side surface 46. In the third lead 23, the suspension portion 233 extends from the third overhang portion 232 in the second direction x. The end face 233A of the suspension portion 233 faces the second direction x. The end face 233A is exposed from the second side surface 44 of the sealing resin 40.

[0062] As shown in Figures 16, 18, and 19, the first relay member 31 has a first base portion 311 and three first connection portions 312. The three first connection portions 312 are individually conductively bonded to the first electrode 11, third electrode 13, and fifth electrode 15 of the semiconductor element 10 via a bonding layer 39. In the semiconductor device A30, the fifth electrode 15 corresponds to the source of the semiconductor element 10.

[0063] As shown in Figures 16, 18, and 19, the second relay member 32 has a second base portion 321 and a second connecting portion 322. Viewed in the first direction z, the second connecting portion 322 extends in the third direction y. Viewed in the first direction z, the second connecting portion 322 overlaps the three first connecting portions 312 of the first relay member 31. Therefore, in the semiconductor device A30 as well, viewed in the first direction z, the second relay member 32 overlaps the first relay member 31.

[0064] As shown in Figures 16 and 18, the second connection portion 322 of the second relay member 32 is provided with an opening 324. The opening 324 penetrates the second connection portion 322 in the first direction z. Viewed in the first direction z, the opening 324 overlaps the mounting surface 20A of the die pad 20. The opening 324 includes two first openings 324A and two second openings 324B that are separated from each other in a direction perpendicular to the first direction z. Viewed in the first direction z, the two first openings 324A overlap two of the three first connection portions 312 of the first relay member 31 and the first electrode 11 and third electrode 13 of the semiconductor element 10, respectively. Viewed in the first direction z, the two second openings 324B overlap a plurality of intermediates 50 and the second electrode 12 and fourth electrode 14 of the semiconductor element 10, respectively.

[0065] Next, the effects and benefits of semiconductor device A30 will be explained.

[0066] The semiconductor device A30 comprises a semiconductor element 10 having a first electrode 11 and a second electrode 12, a first conductive member 61, and a second conductive member 62. The first conductive member 61 overlaps with the first electrode 11 when viewed in the first direction z and is conductive to the first electrode 11. The second conductive member 62 overlaps with the second electrode 12 when viewed in the first direction z and is conductive to the second electrode 12. When viewed in the first direction z, the second conductive member 62 overlaps with the first conductive member 61. Therefore, with this configuration, even in the semiconductor device A30, it is possible to miniaturize the semiconductor device A30 in a plan view while improving the degree of freedom in the arrangement of the first conductive member 61 and the second conductive member 62, each of which is conductive to the semiconductor element 10. Furthermore, by having the same configuration as the semiconductor device A10, the semiconductor device A30 also exhibits the effects of the said configuration.

[0067] In the semiconductor device A30, the second relay member 32 is provided with an opening 324 that penetrates in the first direction z. Viewed in the first direction z, the opening 324 overlaps the die pad 20. By adopting this configuration, during the formation of the sealing resin 40 in the manufacturing process of the semiconductor device A30, it is possible to suppress the generation of voids in the sealing resin 40 in the region sandwiched between the die pad 20 and the second relay member 32.

[0068] The opening 324 of the second relay member 32 includes a first opening 324A and a second opening 324B. Viewed in the first direction z, the first opening 324A overlaps with the first electrode 11 of the semiconductor element 10. By adopting this configuration, during the formation of the sealing resin 40 in the manufacturing process of the semiconductor device A30, voids generated in the sealing resin 40 in the region sandwiched between the semiconductor element 10 and the second relay member 32 can be suppressed. Furthermore, viewed in the first direction z, the second opening 324B overlaps with the second electrode 12 of the semiconductor element 10. By adopting this configuration, during the manufacturing of the semiconductor device A30, it becomes easier to confirm whether the second relay member 32 is positioned in a predetermined location by using the second electrode 12 as a reference. Furthermore, since the formation of solder fillets in the second opening 324B is promoted, the reliability of the mutual conductivity between the second electrode 12 and the second relay member 32 can be improved.

[0069] Fourth Embodiment: A semiconductor device A40 according to the fourth embodiment of the present disclosure will be described based on Figures 21 to 23. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are denoted by the same reference numerals, and redundant explanations are omitted. Here, for ease of understanding, Figure 21 shows the sealing resin 40 being permeable. In Figure 21, the permeable sealing resin 40 is shown by dashed lines.

[0070] In semiconductor device A40, the configuration of the first lead 21, the second lead 22, and the third lead 23 differs from that of semiconductor device A10. The package format of semiconductor device A40 is SOP (Small Outline Package).

[0071] As shown in Figures 21 and 22, the first lead 21 has a plurality of first terminal portions 211. A portion of each of the plurality of first terminal portions 211 protrudes from the first side surface 43 of the sealing resin 40. Viewed in the second direction x, each portion of the plurality of first terminal portions 211 protruding from the first side surface 43 is bent in a gull-wing shape. Each of the plurality of first terminal portions 211 has a mounting surface 211A and a side surface 211B. The mounting surface 211A and side surface 211B are included in the portion. The plurality of first terminal portions 211 are connected to each other. The plurality of first terminal portions 211 are connected to the protruding portion 202 of the die pad 20.

[0072] As shown in Figures 21 and 23, the second lead 22 has a plurality of second terminal portions 221. A portion of each of the plurality of second terminal portions 221 protrudes from the first side surface 43 of the sealing resin 40. Viewed in the second direction x, each portion of the plurality of second terminal portions 221 protruding from the first side surface 43 is bent in a gull-wing shape. Each of the plurality of second terminal portions 221 has a mounting surface 221A and a side surface 221B. The mounting surface 221A and side surface 221B are included in the portion. The plurality of second terminal portions 221 are connected to each other.

[0073] As shown in Figure 21, the third lead 23 has a third terminal portion 231. A portion of the third terminal portion 231 protrudes from the first side surface 43 of the sealing resin 40. When viewed in the second direction x, the portion of the third terminal portion 231 protruding from the first side surface 43 is bent in a gull-wing shape. The mounting surface 231A and side surface 231B of the third terminal portion 231 are included in this portion.

[0074] Next, the effects and benefits of semiconductor device A40 will be explained.

[0075] The semiconductor device A40 comprises a semiconductor element 10 having a first electrode 11 and a second electrode 12, a first conductive member 61, and a second conductive member 62. The first conductive member 61 overlaps with the first electrode 11 when viewed in the first direction z and is conductive to the first electrode 11. The second conductive member 62 overlaps with the second electrode 12 when viewed in the first direction z and is conductive to the second electrode 12. When viewed in the first direction z, the second conductive member 62 overlaps with the first conductive member 61. Therefore, with this configuration, even in the semiconductor device A40, it is possible to miniaturize the semiconductor device A40 in a plan view while improving the degree of freedom in the arrangement of the first conductive member 61 and the second conductive member 62, each of which is conductive to the semiconductor element 10. Furthermore, by having the same configuration as the semiconductor device A10, the semiconductor device A40 also exhibits the effects of the said configuration.

[0076] This disclosure is not limited to the embodiments described above. The specific configuration of each part of this disclosure can be modified in various ways.

[0077] This disclosure includes embodiments described in the following appendices. Appendix 1. A semiconductor device (A10) comprising: a semiconductor element (10) having a first electrode (11) and a second electrode (12) located on one side in a first direction (z); a first conductive member (61) that overlaps with the first electrode in the first direction and is conductive to the first electrode; and a second conductive member (62) that overlaps with the second electrode in the first direction and is conductive to the second electrode, wherein the second conductive member overlaps with the first conductive member in the first direction. Appendix 2. The semiconductor device (A10) according to Appendix 1, wherein the first conductive member (61) is electrically bonded to the first electrode (11). Appendix 3. The semiconductor device (A10) according to Appendix 2, wherein the first conductive member (61) includes a first lead (21) and a first relay member (31) conductively bonded to the first lead, and the first relay member is conductively bonded to the first electrode (11). Appendix 4. The semiconductor device (A10) according to Appendix 3, wherein the second conductive member (62) includes a second lead (22) and a second relay member (32) conductively bonded to the second lead, and the second relay member is conductive to the second electrode (12), and in view of the first direction (z), the second relay member overlaps the second electrode and the first relay member (31), respectively. Appendix 5. The semiconductor device (A10) according to Appendix 4, wherein the semiconductor element (10) has a third electrode (13) located on the same side as the first electrode (11) and the second electrode (12) in the first direction (z), the second electrode is located between the first electrode and the third electrode, and the first relay member (31) is conductively bonded to the third electrode. Appendix 6. The semiconductor device (A10) according to Appendix 5, wherein the semiconductor element (10) has a fourth electrode (14) located on the same side as the first electrode (11) and the second electrode (12) in the first direction (z), the fourth electrode is located on the opposite side from the second electrode with respect to the third electrode (13), and the second relay member (32) overlaps with the fourth electrode when viewed in the first direction and is conductive to the fourth electrode. Appendix 7. The semiconductor device (A10) according to Appendix 4, wherein the second relay member (32) is conductively bonded to the second electrode (12).Note 8. The semiconductor device (A20) according to Note 4, further comprising a conductive intermediate (50), the intermediate being located between the second electrode (12) and the second relay member (32), and the second relay member being electrically connected to the second electrode via the intermediate. Note 9. The semiconductor device (A10) according to any one of Notes 4 to 8, further comprising a die pad (20) on which the semiconductor element (10) is mounted, facing the semiconductor element (10) on the side opposite to the side where the first electrode (11) and the second electrode (12) are located in the first direction (z), the first lead (21) being located on one side of the die pad in a second direction (x) perpendicular to the first direction. Note 10. The semiconductor device (A10) according to Appendix 9, further comprising a sealing resin (40) covering the semiconductor element (10), the first relay member (31), and the second relay member (32), wherein each of the first lead (21) and the second lead (22) is exposed from the sealing resin. Appendix 11. The semiconductor device (A10) according to Appendix 10, wherein the sealing resin (40) has a bottom surface (42) facing the opposite side from the side on which the semiconductor element (10) is located, with reference to the die pad (20) in the first direction (z), and the die pad is exposed from the bottom surface. Appendix 12. The semiconductor device (A10) according to Appendix 10, wherein the second lead (22) is located on the same side as the first lead (21) with reference to the die pad (20) in the second direction (x). Appendix 13. The semiconductor device (A10) according to Appendix 12, wherein the sealing resin (40) has a bottom surface (42) facing the opposite side from the side on which the semiconductor element (10) is located, with reference to the die pad (20) in the first direction (z), and each of the first lead (21) and the second lead (22) is exposed from the bottom surface. Appendix 14. The semiconductor device (A10) according to Appendix 12, wherein the sealing resin (40) has a first side surface (43) facing one side in the second direction (x), and each of the first lead (21) and the second lead (22) protrudes from the first side surface.Note 15. The semiconductor device (A30) according to Note 10, wherein the second lead (22) is located on one side of the die pad (20) in a third direction (y) that is perpendicular to each of the first direction (z) and the second direction (x). Note 16. The semiconductor device (A30) according to Note 15, wherein the second relay member (32) is provided with an opening (324) that penetrates in the first direction (z), and the opening overlaps the die pad (20) when viewed in the first direction. Note 17. The semiconductor device (A30) according to Note 16, wherein the opening (324) includes a first opening (324A) and a second opening (324B) that are separated from each other in a direction perpendicular to the first direction (z), the first opening overlaps the first electrode (11) when viewed in the first direction, and the second opening overlaps the second electrode (12) when viewed in the first direction. Note 18. The semiconductor device (A30) according to Appendix 10, further comprising a third lead (23), wherein the semiconductor element (10) has a control electrode (16) located on the same side as the first electrode (11) and the second electrode (12) in the first direction (z), and the third lead is conductive to the control electrode and exposed from the sealing resin (40). Appendix 19. The semiconductor device (A10) according to Appendix 18, further comprising a third relay member (33) conductively bonded to the control electrode (16) and the third lead (23), wherein the third relay member is covered by the sealing resin (40). Appendix 20. The semiconductor device (A10) according to Appendix 9, wherein the first lead (21) is connected to the die pad (20).

[0078] A10-A40: Semiconductor device, 10: Semiconductor element, 11-15: First to fifth electrodes, 16: Control electrode, 19: Bonding layer, 20: Die pad, 20A: Mounting surface, 20B: Back surface, 201: Mounting portion, 202: Protruding portion, 203: Suspension portion, 203A: End face, 21: First lead, 211: First terminal portion, 211A: Mounting surface, 211B: Side surface, 212: First protruding portion, 213: Suspension portion, 213A: End face, 22: Second lead, 221: Second terminal portion, 221A: Mounting surface, 221B: Side surface, 222: Second protruding portion, 23: Third lead, 231: Third terminal portion, 231A: Mounting surface , 231B: side surface, 232: third protrusion, 233: suspension part, 233A: end face, 31: first intermediate member, 311: first base, 312: first connection part, 313: suspension part, 313A: end face, 32: second intermediate member, 321: second base, 322: second connection part, 323: suspension part, 323A: end face, 324: opening, 324A, 324B: first opening, second opening, 33: third intermediate member, 39: bonding layer, 40: sealing resin, 41: top surface, 42: bottom surface, 43-46: first side surface to fourth side surface, 61, 62: first conductive member, second conductive member, z, x, y: first direction, second direction, third direction

Claims

1. A semiconductor device comprising: a semiconductor element having a first electrode and a second electrode located on one side in a first direction; a first conductive member overlapping the first electrode and conducting to the first electrode when viewed in the first direction; and a second conductive member overlapping the second electrode and conducting to the second electrode when viewed in the first direction, wherein the second conductive member overlaps the first conductive member when viewed in the first direction.

2. The semiconductor device according to claim 1, wherein the first conductive member is electrically bonded to the first electrode.

3. The semiconductor device according to claim 2, wherein the first conductive member includes a first lead and a first relay member electrically bonded to the first lead, and the first relay member is electrically bonded to the first electrode.

4. The semiconductor device according to claim 3, wherein the second conductive member includes a second lead and a second relay member electrically bonded to the second lead, the second relay member is electrically connected to the second electrode, and, viewed in the first direction, the second relay member overlaps the second electrode and the first relay member, respectively.

5. The semiconductor device according to claim 4, wherein the semiconductor element has a third electrode located on the same side as the first electrode and the second electrode in the first direction, the second electrode is located between the first electrode and the third electrode, and the first relay member is electrically bonded to the third electrode.

6. The semiconductor device according to claim 5, wherein the semiconductor element has a fourth electrode located on the same side as the first electrode and the second electrode in the first direction, the fourth electrode is located on the opposite side from the second electrode with respect to the third electrode, and the second relay member overlaps the fourth electrode when viewed in the first direction and is electrically connected to the fourth electrode.

7. The semiconductor device according to claim 4, wherein the second relay member is electrically bonded to the second electrode.

8. The semiconductor device according to claim 4, further comprising a conductive intermediate, the intermediate being located between the second electrode and the second relay member, and the second relay member being electrically connected to the second electrode via the intermediate.

9. The semiconductor device according to any one of claims 4 to 8, further comprising a die pad on which the semiconductor element is mounted, which is facing the semiconductor element on the side opposite to the side on which the first electrode and the second electrode are located in the first direction, wherein the first lead is located on one side of the die pad in a second direction perpendicular to the first direction.

10. The semiconductor device according to claim 9, further comprising a sealing resin covering the semiconductor element, the first relay member and the second relay member, wherein each of the first lead and the second lead is exposed from the sealing resin.

11. The semiconductor device according to claim 10, wherein the sealing resin has a bottom surface that faces away from the side on which the semiconductor element is located, with reference to the die pad in the first direction, and the die pad is exposed from the bottom surface.

12. The semiconductor device according to claim 10, wherein the second lead is located on the same side as the first lead with respect to the die pad in the second direction.

13. The semiconductor device according to claim 12, wherein the sealing resin has a bottom surface that faces away from the side on which the semiconductor element is located, with reference to the die pad in the first direction, and each of the first lead and the second lead is exposed from the bottom surface.

14. The semiconductor device according to claim 12, wherein the sealing resin has a first surface facing one side in the second direction, and each of the first lead and the second lead protrudes from the first surface.

15. The semiconductor device according to claim 10, wherein the second lead is located on one side of a third direction that is orthogonal to each of the first and second directions of the die pad.

16. The semiconductor device according to claim 15, wherein the second relay member is provided with an opening that penetrates in the first direction, and the opening overlaps the die pad when viewed in the first direction.

17. The semiconductor device according to claim 16, wherein the opening includes a first opening and a second opening that are separated from each other in a direction perpendicular to the first direction, and in view in the first direction, the first opening overlaps the first electrode, and in view in the first direction, the second opening overlaps the second electrode.

18. The semiconductor device according to claim 10, further comprising a third lead, wherein the semiconductor element has a control electrode located on the same side as the first electrode and the second electrode in the first direction, and the third lead is conductive to the control electrode and exposed from the sealing resin.

19. The semiconductor device according to claim 18, further comprising a third relay member electrically bonded to the control electrode and the third lead, wherein the third relay member is covered with the sealing resin.

Images