Semiconductor device

Abstract

A semiconductor device according to the present invention comprises a semiconductor element, a first plate-shaped part, a second plate-shaped part, a third plate-shaped part, a fourth plate-shaped part, and a sealing resin. The semiconductor element is mounted on the first plate-shaped part. The first plate-shaped part includes a first main surface and a first rear surface exposed from the sealing resin. The second plate-shaped part is positioned on the side opposite of the first plate-shaped part with respect to the semiconductor element. The second plate-shaped part includes a second main surface exposed from the sealing resin and a second rear surface on the side opposite of the second main surface. The third plate-shaped part and the fourth plate-shaped part are positioned between the first plate-shaped part and the second plate-shaped part.

Description

Semiconductor device

[0001] The present disclosure relates to a semiconductor device.

[0002] Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in the document includes a semiconductor element, a first lead on which the semiconductor element is mounted, and a sealing resin that covers the semiconductor element. The first lead includes an island main surface exposed from the sealing resin.

[0003] Japanese Unexamined Patent Publication No. 2024-169094

[0004] [Summary] During operation of a semiconductor device, current flows through the semiconductor element, and the semiconductor element generates heat.

[0005] An object of the present disclosure is to provide an improved semiconductor device compared to conventional ones. In particular, in view of the above circumstances, an object of the present disclosure is to provide a semiconductor device capable of reducing the resistance of a conduction path connected to a semiconductor element and promoting heat dissipation from the semiconductor element.

[0006] A semiconductor device provided by a first aspect of this disclosure comprises a plurality of semiconductor elements, each having a first electrode, a second electrode, a third electrode, and a fourth electrode; a first conductive member having conductivity to the first electrode and including a first plate-like portion; a second conductive member having conductivity to the second electrode and including a second plate-like portion; a third conductive member having conductivity to the third electrode and including a third plate-like portion; a fourth conductive member having conductivity to the fourth electrode and including a fourth plate-like portion; and a sealing resin having a first resin surface facing a first side in a first direction and a second resin surface facing a second side, wherein in each of the semiconductor elements, the second electrode, the third electrode, and the fourth electrode are located on the first side in the first direction, the first electrode is located on the second side in the first direction, and the third electrode is in a conductive state between the first electrode and the second electrode. A signal for controlling the semiconductor element is input, the fourth electrode is at the same potential as the second electrode, the first conductive member is located on the second side in the first direction with respect to the semiconductor element, the first plate-like portion includes a first main surface on which the plurality of semiconductor elements are mounted and which faces the first side in the first direction, and a first back surface which faces the second side in the first direction and is exposed from the second resin surface, the second conductive member is located on the first side in the first direction with respect to the semiconductor element, the second plate-like portion includes a second main surface which faces the first side in the first direction and is exposed from the first resin surface, and a second back surface which faces the second side in the first direction, and the third plate-like portion and the fourth plate-like portion are located between the first plate-like portion and the second plate-like portion in the first direction.

[0007] Other features and advantages of this disclosure will become more apparent from the detailed description below, with reference to the accompanying drawings.

[0008] Figure 1 is a plan view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 2 is a bottom view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 3 is a front view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 4 is a left side view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 5 is a perspective view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 6 is a perspective view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 7 is an exploded perspective view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 8 is an exploded perspective view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 9 is a partial plan view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 10 is a partial plan view showing a semiconductor device according to the first embodiment of the present disclosure. Figure 11 is a cross-sectional view along the line XI-XI in Figure 9. Figure 12 is a cross-sectional view along the line XII-XII in Figure 9. Figure 13 is a cross-sectional view along the line XIII-XIII in Figure 9. Figure 14 is a cross-sectional view along the line XIV-XIV in Figure 9. Figure 15 is a cross-sectional view along the line XV-XV in Figure 9. Figure 16 is a partial plan view showing a first modified example of a semiconductor device according to the first embodiment of the present disclosure. Figure 17 is a partially exploded perspective view showing a semiconductor device according to the second embodiment of the present disclosure. Figure 18 is a partially exploded perspective view showing a semiconductor device according to the second embodiment of the present disclosure. Figure 19 is a partial plan view showing a semiconductor device according to the second embodiment of the present disclosure. Figure 20 is a partial plan view showing a semiconductor device according to the second embodiment of the present disclosure. Figure 21 is a cross-sectional view along the line XXI-XXI in Figure 19. Figure 22 is a partial plan view showing a first modified example of a semiconductor device according to the second embodiment of the present disclosure. Figure 23 is a plan view showing a semiconductor device according to the third embodiment of the present disclosure. Figure 24 is a bottom view showing a semiconductor device according to the third embodiment of the present disclosure. Figure 25 is a partially exploded perspective view showing a semiconductor device according to the third embodiment of the present disclosure. Figure 26 is a partially exploded perspective view showing a semiconductor device according to the third embodiment of the present disclosure. Figure 27 is a partial plan view showing a semiconductor device according to the third embodiment of the present disclosure. Figure 28 is a partial plan view showing a semiconductor device according to the third embodiment of the present disclosure. Figure 29 is a partially exploded perspective view showing a first modified example of a semiconductor device according to the third embodiment of the present disclosure.Figure 30 is an exploded perspective view showing a first modified example of a semiconductor device according to the third embodiment of this disclosure. Figure 31 is an exploded perspective view showing a semiconductor device according to the fourth embodiment of this disclosure. Figure 32 is an exploded perspective view showing a semiconductor device according to the fourth embodiment of this disclosure. Figure 33 is a partial plan view showing a semiconductor device according to the fourth embodiment of this disclosure. Figure 34 is a partial plan view showing a semiconductor device according to the fourth embodiment of this disclosure. Figure 35 is an exploded perspective view showing a first modified example of a semiconductor device according to the fourth embodiment of this disclosure. Figure 36 is an exploded perspective view showing a first modified example of a semiconductor device according to the fourth embodiment of this disclosure. Figure 37 is a left side view showing a semiconductor device according to the fifth embodiment of this disclosure.

[0009] [Detailed Description] Preferred embodiments of this disclosure will be described in detail below with reference to the drawings.

[0010] The terms "first," "second," "third," etc., used in this disclosure are for identification purposes only and are not intended to assign any order to the objects.

[0011] In this disclosure, "object A is formed on object B" and "object A is formed on object B" include, unless otherwise specified, "object A is directly formed on object B" and "object A is formed on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" and "object A is located on object B" include, unless otherwise specified, "object A is directly located on object B" and "object A is located on object B with another object interposed between object A and object B." Similarly, "object A is located on object B" includes, unless otherwise specified, "object A is located on object B in contact with object B" and "object A is located on object B with another object interposed between object A and object B." Furthermore, unless otherwise specified, "object A overlaps with object B when viewed in a certain direction" includes "object A overlapping with all of object B" and "object A overlapping with a part of object B." Also, in this disclosure, "a surface A facing direction B (one or the other side of it)" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is inclined with respect to direction B.

[0012] First Embodiment: Figures 1 to 15 show a semiconductor device according to the first embodiment of the present disclosure. The semiconductor device A1 of this embodiment comprises a plurality of semiconductor elements 1, a first conductive member 2, a second conductive member 3, a third conductive member 4, a fourth conductive member 5, and a sealing resin 8. The semiconductor device A1 may also include a first terminal member 61, a second terminal member 62, a third terminal member 63, and a fourth terminal member 64.

[0013] Figure 1 is a plan view of semiconductor device A1. Figure 2 is a bottom view of semiconductor device A1. Figure 3 is a front view of semiconductor device A1. Figure 4 is a left side view of semiconductor device A1. Figure 5 is a perspective view of semiconductor device A1. Figure 6 is a perspective view of semiconductor device A1. Figure 7 is a partially exploded perspective view of semiconductor device A1. Figure 8 is a partially exploded perspective view of semiconductor device A1. Figure 9 is a partial plan view of semiconductor device A1. Figure 10 is a partial plan view of semiconductor device A1. Figure 11 is a cross-sectional view along line XI-XI in Figure 9. Figure 12 is a cross-sectional view along line XII-XII in Figure 9. Figure 13 is a cross-sectional view along line XIII-XIII in Figure 9. Figure 14 is a cross-sectional view along line XIV-XIV in Figure 9. Figure 15 is a cross-sectional view along line XV-XV in Figure 9.

[0014] In these figures, the first direction of this disclosure is defined as the first direction z. The first side of the first direction z is referred to as the z1 side, and the second side opposite to the first side in the z direction is referred to as the z2 side. Furthermore, one direction intersecting the first direction z is defined as the second direction x. The first side of the second direction x is referred to as the x1 side, and the second side opposite to the x1 side is referred to as the x2 side. Furthermore, the direction intersecting the first direction z and the second direction x is defined as the third direction y. The first side of the third direction y is referred to as the y1 side, and the second side opposite to the y1 side is referred to as the y2 side. The first direction z, the second direction x, and the third direction y may be mutually orthogonal directions.

[0015] The multiple semiconductor elements 1 are elements for realizing the electrical functions of the semiconductor device A1. The specific configuration of each semiconductor element 1 is not limited in any way and may be, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). Alternatively, each of the multiple semiconductor elements 1 may be other transistors such as an IGBT (Insulated Gate Bipolar Transistor) and a bipolar transistor. Each of the multiple semiconductor elements 1 includes a compound semiconductor substrate. The composition of the compound semiconductor substrate may include silicon (Si), a wide-bandgap semiconductor with a bandgap wider than Si, or an ultra-wide-bandgap semiconductor with an even wider bandgap than a wide-bandgap semiconductor. Wide-bandgap semiconductors include, but are not limited to, silicon carbide (SiC) and gallium nitride (GaN). Ultra-wide-bandgap semiconductors include, but are not limited to, gallium oxide (Ga2O3), diamond, and aluminum nitride (AlN). In this embodiment, the composition of each compound semiconductor substrate of the multiple semiconductor elements 1 may include SiC. The types and compositions of the multiple semiconductor elements 1 are not limited to being the same, but may be different. In this embodiment, each semiconductor element 1 is an n-channel type MOSFET with a vertical structure.

[0016] Each of the multiple semiconductor elements 1 has a first electrode 11, a second electrode 12, a third electrode 13, and a fourth electrode 14.

[0017] In each semiconductor device 1, the second electrode 12, the third electrode 13, and the fourth electrode 14 are located on the first side z1 of the first direction z, and the first electrode 11 is located on the second side z2 of the first direction z.

[0018] In the semiconductor device 1, current flows from the first electrode 11 towards the interior of the device. The first electrode 11 corresponds to the drain electrode.

[0019] In semiconductor device 1, current flows from inside the device toward the second electrode 12. The second electrode 12 corresponds to the source electrode.

[0020] The third electrode 13 is an electrode to which a signal is input for controlling the conduction state between the first electrode 11 and the second electrode 12. In this embodiment, a gate voltage for driving the semiconductor element 1 is applied to the third electrode 13. The third electrode 13 corresponds to the gate electrode.

[0021] The fourth electrode 14 is at the same potential as the second electrode 12 and corresponds to the source sense electrode. The second electrode 12 and the fourth electrode 14 are not limited to a configuration in which they are separated from each other, but may be configured as an integrated unit.

[0022] In this example, the second electrode 12 may be divided into two regions. The fourth electrode 14 may be divided into two regions. The second electrode 12 may be larger than the third electrode 13 and the fourth electrode 14. The third electrode 13 and the two fourth electrodes 14 may be located on one side of the second electrode 12. The third electrode 13 may be located between the two fourth electrodes 14.

[0023] Multiple semiconductor elements 1 may be arranged along a second direction x. Multiple semiconductor elements 1 may form one row or multiple rows. When multiple semiconductor elements 1 form multiple rows, this includes so-called matrix arrangements, staggered arrangements, etc. In the illustrated example, multiple semiconductor elements 1 are arranged to include two rows along the second direction x, or they may be arranged to form only two rows.

[0024] In the third direction y, two semiconductor elements 1 are aligned so that their third electrodes 13 and fourth electrodes 14 are adjacent to each other. Multiple second electrodes 12 are arranged to include two rows along the second direction x. Multiple third electrodes 13 are arranged to include two rows along the second direction x. Multiple fourth electrodes 14 are arranged to include two rows along the second direction x.

[0025] The first conductive member 2 is located on the second side z2 in the first direction z with respect to the plurality of semiconductor elements 1, and is electrically connected to the first electrodes 11 of the plurality of semiconductor elements 1. The first conductive member 2 may include metals such as Cu (copper), Ni (nickel), Fe (iron), or alloys thereof. A metal layer (not shown) may be formed on the first conductive member 2 by a method such as plating.

[0026] The first conductive member 2 includes a first plate-like portion 21. The first plate-like portion 21 is oriented along the xy plane as a whole and includes first main surfaces 21A and 21B. The first main surface 21A faces the first side z1 in the first direction z. The first back surface 21B faces the second side z2 in the first direction z. The first back surface 21B is exposed from the sealing resin 8. The first back surface 21B can be used as a heat dissipation surface for dissipating heat from a plurality of semiconductor elements 1, and as a mounting surface (drain terminal surface) that is conductive to the first electrode 11. The specific shape of the first plate-like portion 21 is not limited in any way, and in the illustrated example, it may be an elongated rectangle with the second direction x as the longitudinal direction when viewed in the first direction z. The thickness of the first plate-like portion 21 in the first direction z is not limited in any way, and may be, for example, 0.2 mm or more and 2.0 mm or less.

[0027] Multiple semiconductor elements 1 are mounted on the first main surface 21A. The first main surface 21A is electrically connected to the first electrodes 11 of the multiple semiconductor elements 1.

[0028] The second conductive member 3 is located on the first side z1 in the first direction z with respect to the plurality of semiconductor elements 1, and is electrically connected to the second electrodes 12 of the plurality of semiconductor elements 1. The second conductive member 3 may include metals such as Cu (copper), Ni (nickel), Fe (iron), or alloys thereof. A metal layer (not shown) may be formed on the second conductive member 3 by a method such as plating.

[0029] The second conductive member 3 includes a second plate-like portion 31. The second plate-like portion 31 is oriented along the xy plane as a whole and includes a second main surface 31A and a second back surface 31B. The second main surface 31A faces the first side z1 in the first direction z. The second back surface 31B faces the second side z2 in the first direction z. The second main surface 31A is exposed from the sealing resin 8. The second main surface 31A can be used as a heat dissipation surface for dissipating heat from the plurality of semiconductor elements 1, and as a mounting surface (source terminal surface) that is conductive to the second electrode 12. The specific shape of the second plate-like portion 31 is not limited in any way, and in the illustrated example, it may be an elongated rectangle with the second direction x as the longitudinal direction when viewed in the first direction z. The thickness of the second plate-like portion 31 in the first direction z is not limited in any way, and may be, for example, 0.2 mm or more and 2.0 mm or less.

[0030] The second conductive member 3 includes a plurality of second element junctions 32. The plurality of second element junctions 32 are electrically joined to the second electrodes 12 of the plurality of semiconductor elements 1. In this example, the plurality of second element junctions 32 may be electrically joined to the second electrodes 12 of the plurality of semiconductor elements 1 by, for example, a conductive bonding material 91. The conductive bonding material 91 is, for example, solder. Alternatively, the conductive bonding material 91 may be a sintered body of metal particles containing silver (Ag) or the like.

[0031] The specific shape, size, and arrangement of each of the multiple second element junctions 32 are not limited in any way. Each of the multiple second element junctions 32, which are not shown, may be columnar in shape extending in the first direction z, and may be, for example, a rectangular prism. In the illustrated example, each of the multiple second element junctions 32 may be a long rectangle with the third direction y as its longitudinal direction when viewed in the first direction z. The multiple second element junctions 32 are arranged in two rows along the second direction x, corresponding to the arrangement of the multiple second electrodes 12 of the multiple semiconductor elements 1.

[0032] The third conductive member 4 is electrically connected to the third electrode 13. The third conductive member 4 may include a metal such as Cu (copper), Ni (nickel), or Fe (iron), or an alloy thereof. A metal layer (not shown) may be formed on the third conductive member 4 by a method such as plating. The third conductive member 4 includes a third plate-like portion 41. The third conductive member 4 may further include a plurality of third element joint portions 42 and two third terminal joint portions 43.

[0033] The third plate-like portion 41 is aligned with the xy-plane as a whole and is located between the first plate-like portion 21 and the second plate-like portion 31 in the first direction z. The thickness of the third plate-like portion 41 in the first direction z is not limited and may be, for example, 0.2 mm or more and 2.0 mm or less.

[0034] The specific shape and size of the third plate-like portion 41 are not limited in any way. In this embodiment, the third plate-like portion 41 may include a first portion 411 and two second portions 412. The first portion 411 extends in the second direction x. In the example shown in Figure 10, the first portion 411 may be located between a plurality of third electrodes 13 and a plurality of fourth electrodes 14 arranged in two rows. The size of the first portion 411 in the second direction x may be greater than the length of the region occupied by the plurality of semiconductor elements 1 in the second direction x. The first portion 411 may be located between a plurality of second element junctions 32 arranged in two rows in the third direction y.

[0035] The two second parts 412 are connected to both ends of the first part 411 in the second direction x, and extend from both ends of the first part 411 in the second direction x to the second side y2 in the third direction y. The two second parts 412 are interposed between the first part 411 and the two third terminal joints 43.

[0036] The two third terminal joints 43 are connected to the ends of the two second parts 412 in the third direction y, on the second side y2. Each third terminal joint 43 may be rectangular in shape, for example.

[0037] Multiple third element junctions 42 are electrically connected to the third electrodes 13 of the multiple semiconductor elements 1. The multiple third element junctions 42 may be electrically connected to the third electrodes 13 of the multiple semiconductor elements 1 by, for example, a conductive bonding material 91. The specific shape, size, and arrangement of each of the multiple third element junctions 42 are not limited in any way. Each of the multiple third element junctions 42, not shown, may have a shape that protrudes from the first part 411 in the third direction y, and may have a curved or bent shape in which a part of it protrudes to the second side z2 in the first direction z when viewed in the second direction x. In the illustrated example, the multiple third element junctions 42 are arranged in two rows along the second direction x, corresponding to the arrangement of the multiple third electrodes 13 of the multiple semiconductor elements 1.

[0038] The fourth conductive member 5 is electrically connected to the fourth electrode 14. The fourth conductive member 5 may include a metal such as Cu (copper), Ni (nickel), or Fe (iron), or an alloy thereof. A metal layer (not shown) may be formed on the fourth conductive member 5 by a method such as plating. The fourth conductive member 5 includes a fourth plate-like portion 51. The fourth conductive member 5 may further include a plurality of fourth element joint portions 52 and two fourth terminal joint portions 53.

[0039] The fourth plate-like portion 51 is aligned with the xy-plane as a whole and is located between the first plate-like portion 21 and the second plate-like portion 31 in the first direction z. Furthermore, in the illustrated example, the fourth plate-like portion 51 may be located on the first side z1 of the first direction z with respect to the third plate-like portion 41, and may be located between the second plate-like portion 31 and the third plate-like portion 41 in the first direction z. The thickness of the fourth plate-like portion 51 in the first direction z is not limited in any way and may be, for example, 0.2 mm or more and 2.0 mm or less.

[0040] The specific shape and size of the fourth plate-like portion 51 are not limited in any way. In this embodiment, the fourth plate-like portion 51 may include a fifth portion 511, two sixth portions 512, and two seventh portions 513. The fifth portion 511 extends in the second direction x. In the example shown in Figure 9, the fifth portion 511 may overlap with the first portion 411 when viewed in the first direction z. The fifth portion 511 may overlap with a plurality of fourth electrodes 14 when viewed in the first direction z. The size of the fifth portion 511 in the second direction x may be larger than the length of the region occupied by the plurality of semiconductor elements 1 in the second direction x, and smaller than the size of the first portion 411 in the second direction x. The fifth portion 511 may be located between a plurality of second element junctions 32 that form two rows in the third direction y.

[0041] The two sixth sections 512 are connected to both ends of the fifth section 511 in the second direction x, and extend from both ends of the fifth section 511 in the second direction x to the second side y2 in the third direction y. The two sixth sections 512 are interposed between the fifth section 511 and the two fourth terminal joints 53. In the illustrated example, the two sixth sections 512 and the two second sections 412 may overlap by at least a portion of each other.

[0042] The two seventh portions 513 are connected to ends on the second side y2 in the third direction y of the two sixth portions 512. The two seventh portions 513 extend inward in the second direction x from the ends on the second side y2 in the third direction y of the two sixth portions 512.

[0043] The two sixth portions 512 are connected to ends on the second side y2 in the third direction y of the two sixth portions 512. The two sixth portions 512 may extend inward in the second direction x from the ends on the second side y2 in the third direction y of the two sixth portions 512.

[0044] The two fourth terminal bonding portions 53 are connected to the two seventh portions 513. Each fourth terminal bonding portion 53 may have, for example, a rectangular shape. The two fourth terminal bonding portions 53 may be located inward in the second direction x with respect to the two third terminal bonding portions 43.

[0045] The plurality of fourth element bonding portions 52 are conductively bonded to the fourth electrodes 14 of the plurality of semiconductor elements 1. The plurality of fourth element bonding portions 52 may be conductively bonded to the fourth electrodes 14 of the plurality of semiconductor elements 1 by, for example, a conductive bonding material 91. The specific shape, size and arrangement of each of the plurality of fourth element bonding portions 52 are not limited at all. Each of the plurality of fourth element bonding portions 52 (not shown) may have a shape protruding from the fifth portion 511 in the third direction y, and may be a prismatic column or the like. In the illustrated example, the plurality of fourth element bonding portions 52 are arranged in two rows along the second direction x corresponding to the arrangement of the plurality of fourth electrodes 14 of the plurality of semiconductor elements 1. The plurality of fourth element bonding portions 52 forming two rows can be located on both sides of the first portion 411 in the third direction y. One third element bonding portion 42 may be located between two fourth element bonding portions 52 adjacent in the second direction x.

[0046] The sealing resin 8 covers the plurality of semiconductor elements 1, the third conductive member 4, the fourth conductive member 5, and parts of the first conductive member 2 and the second conductive member 3. The sealing resin 8 includes an insulating material such as black epoxy resin, for example. The sealing resin 8 may have a first resin surface 81, a second resin surface 82, a third resin surface 83, a fourth resin surface 84, a fifth resin surface 85, and a sixth resin surface 86.

[0047] The first resin surface 81 is a surface facing the first side z1 in the first direction z. The second resin surface 82 is a surface facing the second side z2 in the first direction z. The third resin surface 83 is a surface facing the first side x1 in the second direction x. The fourth resin surface 84 is a surface facing the second side x2 in the second direction x. The fifth resin surface 85 is a surface facing the first side y1 in the third direction y. The sixth resin surface 86 is a surface facing the second side y2 in the third direction y.

[0048] The second main surface 31A is exposed from the first resin surface 81. The first resin surface 81 and the second main surface 31A may be flush with each other. The first back surface 21B is exposed from the second resin surface 82. The second resin surface 82 and the first back surface 21B may be flush with each other.

[0049] The sealing resin 8 may further include a plurality of recesses 801. Each of the plurality of recesses 801 is recessed from the sixth resin surface 86 toward the first side y1 in the third direction y, and is positioned spaced apart from each other in the second direction x.

[0050] The first terminal member 61 is conductive to the first conductive member 2. The first terminal member 61 may include, for example, a metal such as Cu (copper), Ni (nickel), Fe (iron), or an alloy thereof. The first terminal member 61 may include a first terminal portion 611 and a first covering portion 612.

[0051] The first terminal portion 611 protrudes from the sixth resin surface 86 toward the second side y2 in the third direction y. The first terminal portion 611 may have a shape extending along the third direction y, or may have a bent shape. The first covering portion 612 is covered by the sealing resin 8.

[0052] In the present embodiment, the first covering portion 612 is connected to the first plate-shaped portion 21. That is, the first terminal member 61 and the first conductive member 2 form an integral component. Further, in the present embodiment, the semiconductor device A1 may include two first terminal members 61. The two first terminal members 61 are positioned spaced apart in the second direction x.

[0053] The first terminal member 61 is conductive to the first electrode 11, and is used, for example, as a drain sense terminal.

[0054] The second terminal member 62 is electrically connected to the third conductive member 4. The second terminal member 62 may include metals such as Cu (copper), Ni (nickel), Fe (iron), or alloys thereof. The second terminal member 62 may include a second terminal portion 621 and a second covering portion 622.

[0055] The second terminal portion 621 protrudes from the sixth resin surface 86 toward the second side y2 in the third direction y. The second terminal portion 621 may have a shape that extends along the third direction y, or it may have a bent shape. The second covering portion 622 is covered with sealing resin 8. The third terminal joint portion 43 is electrically connected to the second covering portion 622.

[0056] In this embodiment, the semiconductor device A1 may include two second terminal members 62. The two second terminal members 62 are located apart in the second direction x. The two second terminal members 62 are located separately on the outside of the two first terminal members 61 in the second direction x.

[0057] The second terminal member 62 is electrically connected to the third electrode 13 and is used, for example, as a gate terminal.

[0058] The third terminal member 63 is electrically connected to the fourth conductive member 5. The third terminal member 63 may include metals such as Cu (copper), Ni (nickel), Fe (iron), or alloys thereof. The third terminal member 63 may include a third terminal portion 631 and a third covering portion 632.

[0059] The third terminal portion 631 protrudes from the sixth resin surface 86 toward the second side y2 in the third direction y. The third terminal portion 631 may have a shape that extends along the third direction y, or it may have a bent shape. The third covering portion 632 is covered with sealing resin 8. The fourth terminal joint portion 53 is electrically connected to the third covering portion 632.

[0060] In this embodiment, the semiconductor device A1 may include two third terminal members 63. The two third terminal members 63 are located apart in the second direction x. Each third terminal member 63 is located between the first terminal member 61 and the second terminal member 62 in the second direction x.

[0061] The third terminal member 63 is electrically connected to the fourth electrode 14 and is used, for example, as a source sense terminal.

[0062] The fourth terminal member 64 may include metals such as Cu (copper), Ni (nickel), Fe (iron), or alloys thereof. The fourth terminal member 64 may include a fourth terminal portion 641 and a fourth covering portion 642.

[0063] The fourth terminal portion 641 protrudes from the sixth resin surface 86 toward the second side y2 in the third direction y. The fourth terminal portion 641 may have a shape that extends along the third direction y, or it may have a bent shape. The fourth covering portion 642 is covered with the sealing resin 8.

[0064] In this embodiment, the fourth terminal member 64 may be located between the two first terminal members 61 in the second direction x.

[0065] In this embodiment, the fourth terminal member 64 is not electrically connected to any of the first conductive member 2, the second conductive member 3, the third conductive member 4, and the fourth conductive member 5, and is insulated from them. That is, the fourth terminal member 64 is not electrically connected to any of the multiple semiconductor elements 1, and is insulated from them. The fourth terminal member 64 may be a terminal member that does not have an electrical function. In this case, the fourth terminal member 64 may, for example, contribute to improving the mounting strength of the semiconductor device A1. Alternatively, the fourth terminal member 64 may be connected to a temperature measuring element or the like (not shown).

[0066] Each of the multiple recesses 801 may be located, for example, between the fourth terminal member 64 and the first terminal member 61, between the first terminal member 61 and the third terminal member 63, or between the third terminal member 63 and the second terminal member 62.

[0067] Next, the operation of semiconductor device A1 will be explained.

[0068] In this embodiment, the first conductive member 2 having a first plate-shaped portion 21 is electrically connected to the first electrode 11, the second conductive member 3 having a second plate-shaped portion 31 is electrically connected to the second electrode 12, the third conductive member 4 having a third plate-shaped portion 41 is electrically connected to the third electrode 13, and the fourth conductive member 5 having a fourth plate-shaped portion 51 is electrically connected to the fourth electrode 14. These members are preferable to, for example, wires that do not have a plate shape, in order to achieve low resistance and low inductance. The second main surface 31A and the first back surface 21B are exposed from the sealing resin 8. Therefore, it is possible to electrically utilize the second main surface 31A as the source terminal surface and the first back surface 21B as the drain terminal surface, while also utilizing the second main surface 31A and the first back surface 21B as heat dissipation surfaces. Thus, heat dissipation from multiple semiconductor elements 1 can be promoted.

[0069] By positioning the third plate-like portion 41 and the third element bonding portion 42 between the first plate-like portion 21 and the second plate-like portion 31 in the first direction z, it is possible to avoid the semiconductor device A1 becoming too large in plan view.

[0070] The second conductive member 3 includes a plurality of second element junctions 32. As shown in Figure 11, the plurality of second element junctions 32 reach from the second plate-like portion 31 to each of the second electrodes 12 of the plurality of semiconductor elements 1. The plurality of second element junctions 32 are positioned to avoid the third conductive member 4 and the fourth conductive member 5 when viewed in the first direction z. This makes it possible to properly conduct electricity between the second conductive member 3 and the first plate-like portion 21 of the plurality of semiconductor elements 1 while avoiding interference between the second conductive member 3 and the third conductive member 4 and the fourth conductive member 5. By having the plurality of second element junctions 32 located on both sides of the first portion 411 and the fifth portion 511 in the third direction y, a more rational three-dimensional structure becomes possible, which is advantageous for miniaturizing the semiconductor device A1.

[0071] As shown in Figures 9 and 10, the first part 411 and the fifth part 511 overlap each other when viewed in the first direction z. Therefore, this is advantageous for miniaturizing the semiconductor device A1 when viewed in the first direction z.

[0072] Multiple third element junctions 42 extend from a first portion 411 that extends in the second direction x to both sides in the third direction y. This makes it possible to make the first portion 411 a relatively thin member. Furthermore, because the third element junction 42 has a curved or bent shape in which a portion of it protrudes to the second side z2 in the first direction z when viewed in the second direction x, the third element junction 42 is easily elastically deformed. This makes it possible to press the third element junction 42 more strongly against the third electrode 13, and to ensure more reliable electrical contact between the third element junction 42 and the third electrode 13.

[0073] The multiple fourth element junctions 52 protrude from the fifth portion 511 extending in the second direction x toward the second side z2 in the first direction z, and are located on both sides of the first portion 411 in the third direction y. Therefore, it is possible to avoid the multiple fourth element junctions 52 interfering with the third conductive member 4.

[0074] The third plate-shaped portion 41 has a first portion 411 and two second portions 412, which allows for proper electrical connection between the two second terminal members 62 and the third conductive member 4, which are located apart on either side of the second direction x. Furthermore, the two second portions 412 are located on either side of the plurality of second element junctions 32 in the second direction x, which helps to avoid interference between the two second portions 412 and the plurality of second element junctions 32.

[0075] The fourth plate-shaped portion 51 has a fifth portion 511, two sixth portions 512, and two seventh portions 513, which allows for proper electrical connection between the two third terminal members 63 and the fourth conductive member 5, which are located spaced apart on either side of the second direction x. Furthermore, the two sixth portions 512 are located on either side of the plurality of second element junctions 32 in the second direction x, which helps to avoid interference between the two sixth portions 512 and the plurality of second element junctions 32. The inclusion of two seventh portions 513 in the fourth plate-shaped portion 51 allows for proper electrical connection between the third terminal member 63, which is located next to the second terminal member 62 in the second direction x, and the fourth conductive member 5.

[0076] The configuration, which includes two second parts 412 and two sixth parts 512, is preferable for reducing resistance and inductance in the conduction path formed by the third conduction member 4 and the fourth conduction member 5. It also reduces the occurrence of imbalances in the conduction paths between the multiple semiconductor elements 1 and the outside.

[0077] By including the first terminal member 61, the semiconductor device A1 can more appropriately control multiple semiconductor elements 1.

[0078] Figures 16 to 37 show other embodiments of the present disclosure. In these figures, elements that are the same or similar as those in the above embodiments are denoted by the same reference numerals. Furthermore, the configurations of each part in each modification and each embodiment can be appropriately combined with each other to the extent that no technical inconsistencies arise.

[0079] First Embodiment, First Modification: Figure 16 shows a first modification of semiconductor device A1. This modified semiconductor device A11 differs from the semiconductor device A1 described above in that it does not have a fourth terminal member 64.

[0080] This modified example makes it possible to reduce the resistance of the conductive path connecting the multiple semiconductor elements 1 and to promote heat generation from the multiple semiconductor elements 1. Furthermore, as can be seen from this modified example, the semiconductor device of this disclosure may be configured without the fourth terminal member 64.

[0081] Second Embodiment: Figures 17 to 21 show a semiconductor device according to the second embodiment of the present disclosure. The semiconductor device A2 of this embodiment differs from the embodiment described above in that the third plate-shaped portion 41 is located on the first side z1 in the first direction z with respect to the fourth plate-shaped portion 51, and the third plate-shaped portion 41 is located between the second plate-shaped portion 31 and the fourth plate-shaped portion 51.

[0082] In this embodiment, the plurality of third element junctions 42 are located on both sides of the fifth portion 511 in the third direction y. The plurality of third element junctions 42 are, for example, columnar in shape extending in the first direction z. The plurality of fourth element junctions 52 protrude from the fifth portion 511 on both sides in the third direction y. Each fourth element junction 52 has a curved or bent shape, etc., with a portion of it protruding to the second side z2 in the first direction z when viewed in the second direction x.

[0083] This embodiment makes it possible to reduce the resistance of the conductive path connected to the multiple semiconductor elements 1 and to promote heat generation from the multiple semiconductor elements 1. Furthermore, as can be understood from this embodiment, the positional relationship between the third plate-shaped portion 41 and the fourth plate-shaped portion 51 in the first direction z is not limited in any way. One of them may be located on either the first side z1 or the second side z2 in the first direction z relative to the other. Also, the third plate-shaped portion 41 and the fourth plate-shaped portion 51 may be at the same height in the first direction z.

[0084] Second Embodiment, First Modification: Figure 22 shows a first modification of semiconductor device A2. This modification of semiconductor device A21 differs from the above-described semiconductor device A2 in that it does not have a fourth terminal member 64.

[0085] This modified example makes it possible to reduce the resistance of the conductive path connecting the multiple semiconductor elements 1 and to promote heat generation from the multiple semiconductor elements 1. Furthermore, as can be seen from this modified example, the semiconductor device of this disclosure may be configured without the fourth terminal member 64.

[0086] Third Embodiment: Figures 23 to 28 show a semiconductor device according to the third embodiment of the present disclosure. The semiconductor device A3 of this embodiment differs from the embodiment described above in the shape of the third plate-shaped portion 41 and the fourth plate-shaped portion 51.

[0087] In this embodiment, the third plate-like portion 41 includes a first portion 411, two second portions 412, and a third portion 413. The two second portions 412 are connected to both ends of the first portion 411 in the second direction x and extend to the second side y2 in the third direction y. The third portion 413 is connected to the ends of the two second portions 412 on the second side y2 in the third direction y, and connects them. The third portion 413 may have a shape that extends in x. The third plate-like portion 41 may be rectangular and annular when viewed in the first direction z. The third terminal joint portion 43 is connected to the third portion 413.

[0088] In this embodiment, the fourth plate-like portion 51 includes a fifth portion 511, two sixth portions 512, and a seventh portion 513. The two sixth portions 512 are connected to both ends of the fifth portion 511 in the second direction x and extend to the second side y2 in the third direction y. The seventh portion 513 is connected to the ends of the two sixth portions 512 on the second side y2 in the third direction y, and connects them. The seventh portion 513 may have a shape that extends in x. The fourth plate-like portion 51 may be rectangular and annular when viewed in the first direction z. The fourth terminal joint portion 53 is connected to the seventh portion 513. The position of the fourth terminal joint portion 53 in the second direction x is different from that of the third terminal joint portion 43. In addition, in the semiconductor device A3, the fourth plate-like portion 51 is located on the first side z1 in the first direction z relative to the third plate-like portion 41.

[0089] In this embodiment, the semiconductor device A3 may include only one second terminal member 62 and only one third terminal member 63.

[0090] This embodiment makes it possible to reduce the resistance of the conductive paths connecting the multiple semiconductor elements 1 and to promote heat generation from the multiple semiconductor elements 1. Furthermore, because the third plate-shaped portion 41 and the fourth plate-shaped portion 51 are rectangular annular in shape, it is possible to reduce the occurrence of imbalance in the conductive paths between the multiple semiconductor elements 1 and the second terminal member 62 and the third terminal member 63.

[0091] Third Embodiment, First Modification: Figures 29 and 30 show a first modification of semiconductor device A3. In this modification, the semiconductor device A31 is located on the first side z1 of the first direction z relative to the fourth plate-shaped portion 51. The configuration of the plurality of third element junctions 42 and the plurality of fourth element junctions 52 may be the same as, for example, the plurality of third element junctions 42 and the plurality of fourth element junctions 52 of the semiconductor device A2 described above.

[0092] This modification makes it possible to reduce the resistance of the conductive path connected to the multiple semiconductor elements 1 and to promote heat generation from the multiple semiconductor elements 1. Furthermore, as can be understood from this embodiment, the positional relationship of the third plate-shaped portion 41 and the fourth plate-shaped portion 51 in the first direction z is not limited in any way.

[0093] Fourth Embodiment: Figures 31 to 34 show a semiconductor device according to the fourth embodiment of the present disclosure. The semiconductor device A4 of this embodiment differs from the embodiment described above in the shape of the third plate-shaped portion 41 and the fourth plate-shaped portion 51. Furthermore, the semiconductor device A4 has only one first terminal member 61, only one second terminal member 62, and only one third terminal member 63, and does not have the fourth terminal member 64 in the embodiment described above.

[0094] In this embodiment, the third plate-like portion 41 includes a first portion 411, one second portion 412, and one third portion 413. The second portion 412 is connected to the portion between the two ends of the first portion 411 in the second direction x. In the illustrated example, the second portion 412 may be connected to the central portion of the first portion 411 in the second direction x. The third portion 413 is connected to the end of the second side y2 in the third direction y of the second portion 412 and extends to the second side x2 in the second direction x. The third plate-like portion 41 may be, for example, T-shaped when viewed in the first direction z.

[0095] The fourth plate-like portion 51 includes a fifth portion 511, a sixth portion 512, and a seventh portion 513. The sixth portion 512 is connected to the portion between the two ends of the fifth portion 511 in the second direction x. In the illustrated example, the sixth portion 512 may be connected to the central portion of the fifth portion 511 in the second direction x. The seventh portion 513 is connected to the second side y2 of the sixth portion 512 in the third direction y and extends to the first side x1 in the second direction x. The fourth plate-like portion 51 may be, for example, T-shaped when viewed in the first direction z.

[0096] The first part 411 and the fifth part 511 may overlap in parts when viewed in the first direction z. In this example, the fourth plate-like part 51 is located on the first side z1 in the first direction z with respect to the third plate-like part 41.

[0097] The first terminal member 61 is located between the second terminal member 62 and the third terminal member 63 in the second direction x.

[0098] This embodiment makes it possible to reduce the resistance of the conductive path connected to the multiple semiconductor elements 1 and to promote heat generation from the multiple semiconductor elements 1. Furthermore, as can be understood from this embodiment, the number of first terminal members 61, second terminal members 62, and third terminal members 63 is not limited in any way. The shapes of the third plate-shaped portion 41 and the fourth plate-shaped portion 51 can be set in various ways.

[0099] Fourth Embodiment, First Modification: Figures 35 and 36 show a first modification of semiconductor device A4. In this modification, the semiconductor device A41 is located on the first side z1 of the first direction z relative to the fourth plate-shaped portion 51. The configuration of the plurality of third element junctions 42 and the plurality of fourth element junctions 52 may be the same as, for example, the plurality of third element junctions 42 and the plurality of fourth element junctions 52 of the semiconductor device A2 or semiconductor device A31 described above.

[0100] This modified configuration makes it possible to reduce the resistance of the conductive path connecting the multiple semiconductor elements 1 and to promote heat generation from the multiple semiconductor elements 1. Furthermore, as can be seen from this modified configuration, the positional relationship between the third plate-shaped portion 41 and the fourth plate-shaped portion 51 in the first direction z is not limited in any way.

[0101] Fifth Embodiment: Figure 37 shows a semiconductor device A5 according to the fifth embodiment of the present disclosure. In this embodiment, each terminal portion (first terminal portion 611, second terminal portion 621, third terminal portion 631, fourth terminal portion 641) of A5 has a bent shape.

[0102] Specifically, taking the second terminal portion 621 shown in the figure as an example, the tip portion on the second side y2 in the third direction y is bent relative to the root portion located on the sixth resin surface 86 side, so that it is located on the second side z2 in the first direction z. As a result, the semiconductor device A5 has a package structure that can be mounted by surface mounting on a circuit board (not shown) located on the second side z2 in the first direction z and aligned with the xy plane.

[0103] Furthermore, the first conductive member 2 may have, for example, a first plate-shaped portion 21 protruding from the fifth resin surface 85 toward the first side y1 in the third direction y.

[0104] This embodiment makes it possible to reduce the resistance of the conductive path connecting the multiple semiconductor elements 1 and to promote heat generation from the multiple semiconductor elements 1. Furthermore, as can be understood from this embodiment, the package structure of the semiconductor device according to this disclosure is not limited in any way. The semiconductor device according to this disclosure may have a configuration in which each terminal portion is mounted on a circuit board by insertion, or a configuration in which each terminal portion is surface-mounted on a circuit board, or any other configuration.

[0105] The semiconductor device relating to this disclosure is not limited to the embodiments described above. The specific configuration of each part of the semiconductor device relating to this disclosure can be modified in various ways.

[0106] Note 1. The semiconductor element (1) comprises a plurality of semiconductor elements (1) each having a first electrode (11), a second electrode (12), a third electrode (13), and a fourth electrode (14); a first conductive member (2) which is conductive to the first electrode (11) and includes a first plate-like portion (21); a second conductive member (3) which is conductive to the second electrode (12) and includes a second plate-like portion (31); a third conductive member (4) which is conductive to the third electrode (13) and includes a third plate-like portion (41); a fourth conductive member (5) which is conductive to the fourth electrode (14) and includes a fourth plate-like portion (51); and a sealing resin (8) which has a first resin surface (81) facing a first side (z1) in a first direction (z) and a second resin surface (82) facing a second side (z2). In each of the semiconductor elements (1), the second electrode (12), the third electrode (13), and the fourth electrode (14) are located on the first side (z1) of the first direction (z), the first electrode (11) is located on the second side (z2) of the first direction (z), the third electrode (13) receives a signal to control the conductivity between the first electrode (11) and the second electrode (12), the fourth electrode (14) is at the same potential as the second electrode (12), and the first conductive member (2) is located on the second side (z2) of the first direction (z) with respect to the semiconductor element (1). The first plate-like portion (21) includes a first main surface (21A) on which the plurality of semiconductor elements (1) are mounted and facing the first side (z1) in the first direction (z), and a first back surface (21B) facing the second side (z2) in the first direction (z) and exposed from the second resin surface (82), the second conductive member (3) is located on the first side (z1) in the first direction (z) with respect to the semiconductor elements (1), the second plate-like portion (31) includes a second main surface (31A) facing the first side (z1) in the first direction (z) and exposed from the first resin surface (81), and a second back surface (31B) facing the second side (z2) in the first direction (z), The semiconductor device (A1) is located between the first plate-like portion (21) and the second plate-like portion (31) in the first direction (z), wherein the third plate-like portion (41) and the fourth plate-like portion (51) are located in the first direction (z).Note 2. The semiconductor device (A1) according to Note 1, wherein the second conductive member (3) includes a plurality of second element junctions (32) electrically joined to the second electrodes (12) of the plurality of semiconductor elements (1), the third plate-shaped portion (41) includes a plurality of third element junctions (42) electrically joined to the third electrodes (13) of the plurality of semiconductor elements (1), and the fourth plate-shaped portion (51) includes a plurality of fourth element junctions (52) electrically joined to the fourth electrodes (14) of the plurality of semiconductor elements (1). Note 3. The semiconductor device (A1) according to Note 2, wherein the plurality of semiconductor elements (1) are arranged along a second direction (x) intersecting the first direction (z). Note 4. The semiconductor element (1) further comprises a second terminal member (62) that is conductive to the third conductive member (4) and a third terminal member (63) that is conductive to the fourth conductive member (5), wherein the plurality of semiconductor elements (1) are located on the first side (y1) of a third direction (y) that intersects the first direction (z) and the second direction (x) with respect to the second terminal member (62) and the third terminal member (63), the second terminal member (62) includes a second terminal portion (621) that protrudes from the sealing resin (8) to the second side (y2) of the third direction (y) and a second covering portion (622) covered by the sealing resin (8), the third terminal member (63) includes a third terminal portion (631) that protrudes from the sealing resin (8) to the second side (y2) of the third direction (y) and a third covering portion (632) covered by the sealing resin (8), The semiconductor device (A1) according to Appendix 3, wherein the third conductive member (4) includes a third terminal joint (43) electrically connected to the second covering portion (622), and the fourth conductive member (5) includes a fourth terminal joint (53) electrically connected to the third covering portion (632). Appendix 5. The semiconductor device (A1) according to Appendix 4, further comprising a first terminal member (61) electrically connected to the first conductive member (2), wherein the first terminal member (61) includes a first terminal portion (611) protruding from the sealing resin (8) toward the second side (y2) in the third direction (y).Note 6. The semiconductor device (A1 to A41) according to Note 4 or 5, wherein the plurality of semiconductor elements (1) are arranged to include two rows along the second direction (x), and the plurality of semiconductor elements (1) forming the two rows are arranged in the third direction (y), with the third electrode (13) and the fourth electrode (14) being adjacent to each other. Note 7. The semiconductor device (A1) according to Note 5, wherein the fourth plate-like portion (51) is located on the first side (z1) of the first direction (z) with respect to the third plate-like portion (41). Note 8. The semiconductor device (A2) according to Note 5, wherein the third plate-like portion (41) is located on the first side (z1) of the first direction (z) with respect to the fourth plate-like portion (51). Note 9. The semiconductor device (A1, A3, A4) described in Appendix 7, wherein the third plate-like portion (41) includes a first portion (411) extending in the second direction (x) and connected to the plurality of third element junctions (42), the fourth plate-like portion (51) includes a fifth portion (511) extending in the second direction (x) and connected to the plurality of fourth element junctions (52), at least a portion of the first portion (411) and the fifth portion (511) overlap when viewed in the first direction (z), and the plurality of fourth element junctions (52) include two fourth element junctions (52) located on both sides of the first portion (411) in the third direction (y). Appendix 10. The semiconductor device (A2, A31, A41) according to Appendix 8, wherein the third plate-like portion (41) includes a first portion (411) extending in the second direction (x) and connected to the plurality of third element junctions (42), the fourth plate-like portion (51) includes a fifth portion (511) extending in the second direction (x) and connected to the plurality of fourth element junctions (52), at least a portion of the first portion (411) and the fifth portion (511) overlap when viewed in the first direction (z), and the plurality of third element junctions (42) include two third element junctions (42) located on both sides of the fifth portion (511) in the third direction (y).Note 11. The semiconductor device (A1 to A41) according to Note 7 or 8, wherein the third plate-like portion (41) includes a first portion (411) extending in the second direction (x) and connected to the plurality of third element junctions (42), and a second portion (412) extending in the third direction (y) and interposed between the first portion (411) and the third terminal junction (43); the fourth plate-like portion (51) includes a fifth portion (511) extending in the second direction (x) and connected to the plurality of fourth element junctions (52), and a sixth portion (512) extending in the third direction (y) and interposed between the fifth portion (511) and the fourth terminal junction (53); and the plurality of fourth element junctions (52) include two fourth element junctions (52) located on both sides of the first portion (411) in the third direction (y). Note 12. The semiconductor device (A1 to A21) according to Note 11, comprising two second terminal members (62) separated in the second direction (x), the third conductive member (4) including two third terminal joints (43), and the third plate-like portion (41) including two second portions (412) connected to both ends of the first portion (411) in the second direction (x). Note 12-1. The semiconductor device (A1 to A21) according to Note 12, comprising two third terminal members (63) separated in the second direction (x), the fourth conductive member (5) including two fourth terminal joints (53), and the fourth plate-like portion (51) including two sixth portions (512) connected to both ends of the fifth portion (511) in the second direction (x). Note 13. The semiconductor device (A3, A31) according to Appendix 11, wherein the third plate-like portion (41) includes two second portions (412) connected to both ends of the first portion (411) in the second direction (x), and a third portion (413) connecting the ends of the two second portions (412) in the third direction (y). Appendix 13-1. The semiconductor device (A3, A31) according to Appendix 13, wherein the fourth plate-like portion (51) includes two sixth portions (512) connected to both ends of the fifth portion (511) in the second direction (x), and a seventh portion (513) connecting the ends of the two sixth portions (512) in the third direction (y).Note 14. The semiconductor device (A4, A41) according to Note 11, wherein the second part (412) is connected to the portion of the first part (411) between the ends in the second direction (x), and the third plate-like portion (41) includes a third part (413) interposed between the end of the second part (412) in the third direction (y) and the third terminal joint (43) and extending in the second direction (x). Note 14-1. The semiconductor device (A4, A41) according to Note 11, wherein the sixth part (512) is connected to the portion of the fifth part (511) between the ends in the second direction (x), and the fourth plate-like portion (51) includes a seventh part (513) interposed between the end of the sixth part (512) in the third direction (y) and the fourth terminal joint (53) and extending in the second direction (x). Note 15. The first terminal member (61) and the first conductive member (2) form an integrated component, the semiconductor device (A1 to A41) described in Appendix 5.

[0107] A1, A11, A2, A21, A3, A31, A4, A41: Semiconductor device, 1: Semiconductor element, 2: First conductive member, 3: Second conductive member, 4: Third conductive member, 5: Fourth conductive member, 8: Sealing resin, 11: First electrode, 12: Second electrode, 13: Third electrode, 14: Fourth electrode, 21: First plate-shaped part, 21A: First main surface, 21B: First back surface, 31: Second plate-shaped part, 31A: Second main surface, 31B: Second back surface, 32: Second element joint, 41: Third plate-shaped part, 42: Third element joint, 43: Third terminal joint, 51: Fourth plate-shaped part, 52: Fourth element joint, 53: Fourth terminal joint, 61: First terminal member, 62: Second terminal member, 63: Third terminal part Material, 64: Fourth terminal member, 81: First resin surface, 82: Second resin surface, 83: Third resin surface, 84: Fourth resin surface, 85: Fifth resin surface, 86: Sixth resin surface, 91: Conductive bonding material, 411: First part, 412: Second part, 413: Third part, 511: Fifth part, 512: Sixth part, 513: Seventh part, 611: First terminal part, 61 2: First covering portion, 621: Second terminal portion, 622: Second covering portion, 631: Third terminal portion, 632: Third covering portion, 641: Fourth terminal portion, 642: Fourth covering portion, 801: Recess, x: Second direction, x1: First side, x2: Second side, y: Third direction, y1: First side, y2: Second side, z: First direction, z1: ​​First side, z2: Second side

Claims

1. A plurality of semiconductor elements, each having a first electrode, a second electrode, a third electrode, and a fourth electrode; a first conductive member that is conductive to the first electrode and includes a first plate-shaped portion; a second conductive member that is conductive to the second electrode and includes a second plate-shaped portion; a third conductive member that is conductive to the third electrode and includes a third plate-shaped portion; a fourth conductive member that is conductive to the fourth electrode and includes a fourth plate-shaped portion; and a sealing resin having a first resin surface facing a first side in a first direction and a second resin surface facing a second side, wherein in each of the semiconductor elements, the second electrode, the third electrode, and the fourth electrode are located on the first side in the first direction, the first electrode is located on the second side in the first direction, the third electrode receives a signal to control the conductivity between the first electrode and the second electrode, the fourth electrode is at the same potential as the second electrode, and the first conductive member is located on the second side in the first direction relative to the semiconductor element. The semiconductor device comprises a first plate-like portion on which the plurality of semiconductor elements are mounted and which faces the first side in the first direction and a first back surface facing the second side in the first direction and exposed from the second resin surface, the second conductive member located on the first side in the first direction with respect to the semiconductor elements, the second plate-like portion comprising a second main surface facing the first side in the first direction and exposed from the first resin surface and a second back surface facing the second side in the first direction, and the third plate-like portion and the fourth plate-like portion located between the first plate-like portion and the second plate-like portion in the first direction.

2. The semiconductor device according to claim 1, wherein the second conductive member includes a plurality of second element junctions electrically bonded to the second electrodes of the plurality of semiconductor elements, the third plate-shaped portion includes a plurality of third element junctions electrically bonded to the third electrodes of the plurality of semiconductor elements, and the fourth plate-shaped portion includes a plurality of fourth element junctions electrically bonded to the fourth electrodes of the plurality of semiconductor elements.

3. The semiconductor device according to claim 2, wherein the plurality of semiconductor elements are arranged along a second direction intersecting the first direction.

4. The semiconductor device according to claim 3, further comprising a second terminal member that is conductive to the third conductive member and a third terminal member that is conductive to the fourth conductive member, wherein the plurality of semiconductor elements are located on the first side of a third direction intersecting the first direction and the second direction with respect to the second terminal member and the third terminal member, the second terminal member includes a second terminal portion that protrudes from the sealing resin to the second side in the third direction and a second covering portion covered by the sealing resin, the third terminal member includes a third terminal portion that protrudes from the sealing resin to the second side in the third direction and a third covering portion covered by the sealing resin, the third conductive member includes a third terminal joint portion electrically bonded to the second covering portion, and the fourth conductive member includes a fourth terminal joint portion electrically bonded to the third covering portion.

5. The semiconductor device according to claim 4, further comprising a first terminal member that is electrically conductive to the first conductive member, wherein the first terminal member includes a first terminal portion that protrudes from the sealing resin toward the second side in the third direction.

6. The semiconductor device according to claim 4 or 5, wherein the plurality of semiconductor elements are arranged to include two rows along the second direction, and the plurality of semiconductor elements forming the two rows are arranged in the third direction, with the third electrode and the fourth electrode adjacent to each other.

7. The semiconductor device according to claim 5, wherein the fourth plate-like portion is located on the first side in the first direction relative to the third plate-like portion.

8. The semiconductor device according to claim 5, wherein the third plate-like portion is located on the first side in the first direction relative to the fourth plate-like portion.

9. The semiconductor device according to claim 7, wherein the third plate-like portion includes a first portion extending in the second direction and connected to the plurality of third element junctions, the fourth plate-like portion includes a fifth portion extending in the second direction and connected to the plurality of fourth element junctions, at least a portion of the first portion and the fifth portion overlap when viewed in the first direction, and the plurality of fourth element junctions include two fourth element junctions located on both sides of the first portion in the third direction.

10. The semiconductor device according to claim 8, wherein the third plate-like portion includes a first portion extending in the second direction and connected to the plurality of third element junctions, the fourth plate-like portion includes a fifth portion extending in the second direction and connected to the plurality of fourth element junctions, at least a portion of the first portion and the fifth portion overlap when viewed in the first direction, and the plurality of third element junctions include two third element junctions located on both sides of the fifth portion in the third direction.

11. The semiconductor device according to claim 7 or 8, wherein the third plate-like portion includes a first portion extending in the second direction and connected to the plurality of third element junctions, and a second portion extending in the third direction and interposed between the first portion and the third terminal junction; the fourth plate-like portion includes a fifth portion extending in the second direction and connected to the plurality of fourth element junctions, and a sixth portion extending in the third direction and interposed between the fifth portion and the fourth terminal junction; and the plurality of fourth element junctions include two fourth element junctions located on both sides of the first portion in the third direction.

12. The semiconductor device according to claim 11, comprising two second terminal members separated in the second direction, the third conductive member including two third terminal joints, and the third plate-like portion including two second portions connected to both ends of the first portion in the second direction.

13. The semiconductor device according to claim 11, wherein the third plate-like portion includes two second portions connected to both ends of the first portion in the second direction, and a third portion connecting the ends of the two second portions in the third direction.

14. The semiconductor device according to claim 11, wherein the second part is connected to the portion between the two ends of the first part in the second direction, and the third plate-like portion includes a third part interposed between the end of the second part in the third direction and the third terminal joint and extending in the second direction.

15. The semiconductor device according to claim 5, wherein the first terminal member and the first conductive member form an integrated component.

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