Carrier, inspection system, and inspection method

Abstract

A carrier according to the present invention supports a plurality of separate electronic devices together. The carrier includes a flat base, and a plurality of base dies which is provided on one surface of the base and to which the plurality of electronic devices are detachably fixed. The base and the plurality of base dies are formed from a material containing at least one of silicon and carbon. Thus, the carrier can stably fix the plurality of separate electronic devices. Thus, the carrier can stably fix the plurality of separate electronic devices.

Description

Carrier, Inspection System, and Inspection Method

[0001] The present disclosure relates to a carrier, an inspection system, and an inspection method.

[0002] Patent Document 1 discloses an inspection system (characteristic measurement system) that inspects a plurality of divided (singulated) electronic devices (semiconductor chips). This inspection system performs inspection in a state where each electronic device is attached to a dicing tape fixed to a film frame. Specifically, the inspection system images each electronic device on the dicing tape with a camera, drives a driving mechanism based on the recognized positions to align each electronic device, and then brings each probe into contact with each electronic device to perform inspection.

[0003] Japanese Patent Laid-Open No. 2012-122847

[0004] The present disclosure provides a technique capable of stably fixing a plurality of divided electronic devices.

[0005] According to one aspect of the present disclosure, there is provided a carrier that collectively supports a plurality of divided electronic devices, comprising: a flat plate-shaped base; and a plurality of base dies provided on one surface of the base, to which the plurality of electronic devices are releasably fixed, wherein the base and the plurality of base dies are formed of a material containing at least one of silicon and carbon.

[0006] According to one aspect, a plurality of divided electronic devices can be stably fixed.

[0007] This is a flowchart showing the processing flow of an inspection method according to an embodiment. This is a flowchart showing the processing flow of an inspection method according to a reference example. This is a schematic longitudinal cross-sectional view showing a part of a device support according to the first embodiment. This is a schematic longitudinal cross-sectional view showing a part of a device support according to a modified example. This is a perspective view showing an enlarged view of a base die. This is a perspective view showing the state in which each base die is arranged on a base wafer. This is a plan view illustrating the arrangement relationship of each electronic device and each base die on a device support. This is a diagram showing a schematic processing flow of an inspection method using a device support. This is a schematic partial cross-sectional view showing the inspection state of an inspection system according to the second embodiment. This is a schematic partial cross-sectional view showing the inspection state of an inspection system according to the third embodiment. This is a schematic partial cross-sectional view showing the inspection state of an inspection system according to the fourth embodiment. This is a schematic partial cross-sectional view showing the inspection state of an inspection system according to the fifth embodiment. This is a schematic partial cross-sectional view showing the inspection state of an inspection system according to the sixth embodiment. This is a schematic partial cross-sectional view showing the inspection state of an inspection system according to the seventh embodiment. This is a schematic partial cross-sectional view showing the inspection state of an inspection system according to the eighth embodiment. This is a schematic partial cross-sectional view showing the inspection state of an inspection system according to the ninth embodiment. This is a perspective view showing the positioning of the carrier and the stage. This is a plan view showing a part of the base wafer and each base die according to a modified example. This is a plan view showing the entire base wafer according to a modified example.

[0008] The following describes embodiments for implementing this disclosure with reference to the drawings. In each drawing, the same reference numerals are used for identical components, and redundant explanations may be omitted.

[0009] In semiconductor manufacturing, for example, multiple electronic devices are formed on a wafer by applying substrate processing to a disc-shaped wafer. The base material wafer may be a silicon semiconductor or another compound semiconductor. Furthermore, in semiconductor manufacturing, each electronic device formed on the wafer is diced to form smaller electronic devices. Each electronic device is then mounted in an electronic circuit along with other devices, and thus electrically driven in the electronic circuit.

[0010] An example of an electronic device formed by the above manufacturing process is a volatile semiconductor memory called DRAM (Dynamic Random Access Memory). In particular, the following embodiment will explain using HBM (High Bandwidth Memory), which is a DRAM in which multiple DRAM dies (device dies) are stacked by 3D stacking, as an example. Multiple DRAM dies are stacked on a logic wafer on which cores having appropriate internal wiring are mounted or stacked, thereby forming an electronic device having electrode pads or bumps. The HBM formed in this way can have a high data transfer rate (bandwidth). It should be noted that the electronic device according to this embodiment is not limited to HBM, but can of course be applied to various elements that are used in electronic circuits.

[0011] Figure 1A is a flowchart showing the processing flow of the inspection method according to the embodiment. Figure 1B is a flowchart showing the processing flow of the inspection method according to a reference example. The inspection method according to the embodiment is a method for inspecting the electrical characteristics, including normal / abnormal, of the above-mentioned electronic device, and has a plurality of test steps performed in the manufacturing process of the electronic device. To facilitate understanding of the inspection method according to the embodiment, the inspection method according to the reference example shown in Figure 1B will be explained first. The inspection method according to the reference example is one that has been conventionally performed in the manufacturing process of DRAM (HBM) electronic devices.

[0012] In the inspection method described in the reference example, the first step is to provide a core wafer (step S1001). The provided core wafer has multiple device cores (DRAM cores) formed on it by prior substrate processing, which form the core of the electronic device. Examples of substrate processing for the core wafer include film deposition, etching, and ashing. This core wafer is a disc-shaped manufactured product in which each device core is arranged without being divided.

[0013] In the reference example inspection method, the next step is to test each device core in the form of a core wafer (step S1002). In the core wafer test, an inspection device (not shown) is used to bring multiple probes of a probe card into contact with the electrode pads or bumps of each device core, and an electrical test is performed using a tester connected to the probe card. For example, the inspection device performs a burn-in test in which a predetermined electrical signal is continuously supplied to each device core, a behavior test in which the temperature of each device core is changed, and determines whether each device core is normal or abnormal.

[0014] Subsequently, the core wafer is diced to form multiple device cores, and these fragmented device cores are then stacked onto a logic wafer (step S1003). For example, multiple logic dies are pre-formed on the logic wafer to stack multiple device cores. Each logic die has electrodes or bumps, and logic circuits (internal wiring) connected to them. By stacking multiple device cores onto these logic dies, an electronic device is formed. Before each device core is stacked, the logic wafer undergoes logic inspection using another inspection device (not shown) to ensure that good device cores are stacked onto normal logic dies. However, the manufacturing process of stacking each device core involves handling the wafer, molding, back polishing, etc. These processes in the manufacturing process subject each device core to mechanical or chemical stress. Mechanical stress includes handling or thermal stress during stacking. Chemical stress includes reactions with processing liquids used for cleaning or coating during the manufacturing process.

[0015] Therefore, in the inspection method for the reference example, a step is performed to test each electronic device formed as described above while maintaining the wafer shape (step S1004). Examples of tests for each electronic device include burn-in tests, behavior tests at different temperatures, and data transfer tests.

[0016] After testing each electronic device, the inspection method in the reference example involves dicing the logic wafer and providing (shipping) the divided electronic devices (step S1005). The provided electronic devices are then mounted on an electronic circuit (such as an insulating substrate) that has an expensive chip, such as a GPU (Graphics Processing Unit). In other words, each electronic device that has been diced after testing the logic wafer is directly assembled into an actual electronic circuit.

[0017] Incidentally, when wafers are diced into smaller pieces, mechanical and chemical stresses are applied to the electronic devices formed on the wafer, as described above. Therefore, for example, a device core that was judged to be a good product in the core wafer state may become a defective product during the subsequent manufacturing process. If a defective electronic device is assembled into the electronic circuit of a GPU, it may have to be discarded along with the GPU, which is a high-end device.

[0018] Therefore, in the inspection of electronic devices, it is desirable to perform tests on the electronic devices after they have been diced (after stress has been applied) and before they are mounted on an electronic circuit. However, if each electronic device is attached to a dicing tape for inspection, there are challenges such as the tendency for the electronic devices to shift position due to changes in the stress of the tape, and the difficulty in accurately controlling the temperature.

[0019] Therefore, in the inspection method according to this embodiment, each fragmented electronic device is fixed to a flat carrier to form a device support, and the inspection of each electronic device is performed in this device support state. The inspection method according to this embodiment will be described in detail below with reference to Figure 1A.

[0020] In the inspection method according to the embodiment, steps S101 to S103 perform the same processing as steps S1001 to S1003 of the inspection method according to the above-described reference example. Therefore, the explanation of steps S101 to S103 is omitted.

[0021] In step S104, the inspection method according to the embodiment dices a logic wafer having multiple electronic devices, dividing it into multiple electronic devices (fragmenting it). That is, instead of testing each electronic device in the form of the logic wafer, as in the inspection method according to the reference example, each fragmented electronic device is formed. Each diced electronic device has a stacked structure in which a logic die and multiple device cores are stacked. However, even in the inspection method according to the embodiment, testing may be performed in the form of the wafer before dicing the logic wafer. This makes it possible to recognize in advance whether each electronic device on the logic wafer is good or bad, and to remove defective electronic devices.

[0022] Next, in the inspection method according to the embodiment, a step of forming a device support is performed by fixing each fragmented electronic device to a carrier (step S105). The carrier is a support substrate that detachably fixes each fragmented electronic device and makes each electronic device immobile in the fixed state. The structure of the device support including this carrier will be described in detail later.

[0023] Furthermore, in the inspection method according to the embodiment, a step of testing each electronic device is performed in the state of the device support formed in step S105 (step S106). For this testing of each electronic device, it is possible to use a general inspection device for inspecting wafers. Therefore, the inspection method according to the embodiment does not require the introduction of a new dedicated inspection device for inspecting each fragmented electronic device.

[0024] After step S106, in the inspection method according to the embodiment, each electronic device is detached from the carrier and the electronic devices recognized as good are provided (step S107). The provided electronic devices are assembled, for example, into an electronic circuit having a GPU as described above. Since these electronic devices have been determined to be good in the test after being cut into small pieces by dicing, they are devices that did not become defective due to mechanical stress during dicing, etc. With the mounting of these electronic devices, the electronic circuit having a GPU will have a significant reduction in waste due to defective electronic devices after assembly.

[0025] <First Embodiment> Next, the configuration of the carrier 2 (device support 1) according to the first embodiment, which supports each of the above-mentioned electronic devices 10, will be described in detail with reference to Figure 2A. Figure 2A is a schematic longitudinal cross-sectional view showing a part of the device support 1 according to the first embodiment. Figure 2B is a schematic longitudinal cross-sectional view showing a part of the device support 1α according to a modified example.

[0026] The device support 1 enables inspection of each electronic device 10 by fixing a plurality of electronic devices 10, such as DRAM (HBM), to a rigid carrier 2. The device support 1 according to this embodiment is a disc-shaped wafer (perfectly circular in plan view). However, the shape of the device support 1 is not particularly limited, and may be formed in a rectangular shape (square, rectangle) or other polygonal shape in plan view, for example.

[0027] The carrier 2 includes a base wafer 20 and a plurality of base dies 30 bonded to the base wafer 20 and capable of individually supporting each electronic device 10. The electronic devices 10 fixed to the carrier 2 are formed by stacking a plurality of device cores on a logic die as described above. The electronic device 10 has a first surface 10a facing vertically upward on the side opposite to the carrier 2, and a second surface 10b formed on the side opposite to the first surface 10a.

[0028] The electronic device 10 has a logic die on the first surface 10a and a device core on the second surface 10b. Therefore, the first surface 10a is provided with electrode pads or bumps that can be contacted by each probe of a probe card of an inspection device (not shown). On the other hand, the second surface 10b is the surface that is joined to each base die 30 of the carrier 2.

[0029] The base wafer 20 of carrier 2 has a flat base capable of supporting each base die 30 together. In the first embodiment, the base wafer 20 is formed in a disc shape, but as described above, it may be formed in a rectangular shape (square, rectangle) or other polygonal shape. The diameter of the base wafer 20 is not particularly limited, but for example, it may be set to around 300 mm, similar to a typical wafer. By matching the diameter to that of a typical wafer, the carrier 2 can be transported accurately using conventional transport equipment.

[0030] The base wafer 20 extends in the planar direction with a substantially constant thickness and has rigidity that allows it to maintain its extended position even when multiple base dies 30 and electronic devices 10 are mounted on it. The thickness of the base wafer 20 may be greater than or less than the thickness of the electronic devices 10.

[0031] The base wafer 20 has a first surface 20a (one surface) to which multiple base dies 30 are joined, and a second surface 20b (the other surface) which is the surface opposite to the first surface 20a. In the base wafer 20, through holes 21 are formed at the joining locations of each base die 30, penetrating between the first surface 20a and the second surface 20b. The diameter of each through hole 21 is set to a range of, for example, 0.5 mm to 2 mm. By forming each through hole 21 with a small diameter in this way, the mechanical strength of the base wafer 20 can be prevented from being significantly reduced.

[0032] The base wafer 20 is preferably formed from a hard material with a low coefficient of thermal expansion and high thermal conductivity. Specific materials for the base wafer 20 include materials containing silicon (Si) and / or carbon (C). For example, the base wafer 20 can be a silicon semiconductor substrate. Alternatively, the base wafer 20 may be formed from silicon carbide, quartz glass, industrial diamond, etc.

[0033] The base die 30 forms a seat on the base wafer 20 that directly supports the electronic device 10. Each base die 30 is formed in a rectangular shape (square or rectangle) corresponding to the planar shape of the electronic device 10 it supports (see also Figure 3A). In plan view, each base die 30 has a larger area than the area of ​​the electronic device 10.

[0034] Each base die 30 has a first surface 30a to which the electronic device 10 is fixed, and a second surface 30b on the opposite side of the first surface 30a that is fixed to the base wafer 20. The thickness of each base die 30 may be set to be, for example, thicker than the thickness of the electronic device 10 and thinner than the thickness of the base wafer 20, or it may be set to be thicker than the thickness of the base wafer 20.

[0035] Furthermore, each base die 30 is provided with a through hole 31 that penetrates between the first surface 30a and the second surface 30b. For example, the through hole 31 is formed at the center of the base die 30. The diameter of the through hole 31 is set to be approximately the same as the diameter of each through hole 21 in the base wafer 20. Each base die 30 is fixed to the base wafer 20 such that the through hole 31 overlaps with (communicates with) the through hole 21.

[0036] The base die 30 is preferably made of a hard material with a low coefficient of thermal expansion and high thermal conductivity. Specific examples of base die 30 materials include silicon-containing materials and / or carbon-containing materials. The base die 30 material may be the same as that of the base wafer 20, or it may be a different material. By using the same material for both the base wafer 20 and each base die 30, their respective coefficients of thermal expansion can be matched, thereby suppressing positional displacement between the base wafer 20 and each base die 30 during heating. Furthermore, if the base die 30 is made of the same material as the base wafer 20, the carrier 2 may be provided (manufactured) in a form in which the base wafer 20 and each base die 30 are pre-molded together.

[0037] When the base wafer 20 and each base die 30 are made of separate components, a first bonding layer 41 is provided between the base wafer 20 and each base die 30 to firmly fix them together. The first bonding layer 41 can employ bonding means such as adhesive bonding, welding, or diffusion bonding. For example, when bonding the base wafer 20 and each base die 30, a thermosetting resin can be applied. In this case, the adhesive can be applied to the second surface 30b of each base die 30 and placed on the base wafer 20, and then annealed to firmly fix each base die 30 to the base wafer 20.

[0038] Figure 3A is a magnified perspective view of the base die 30. Figure 3B is a perspective view showing each base die 30 arranged on the base wafer 20. Figure 4 is a plan view illustrating the arrangement of each electronic device 10 and each base die 30 on the device support 1. Note that in Figure 3B, each base die 30 is exaggerated and depicted as large for ease of understanding. In reality, each base die 30 is formed to be sufficiently small according to the size of each electronic device 10, and more of them (for example, about 300) are arranged on the base wafer 20 than shown in Figure 3B.

[0039] As shown in Figure 3A, the first surface 30a of the base die 30 has a plurality of grooves 32 that extend radially from the through hole 31. The plurality of grooves 32 communicate with the central through hole 31, allowing gas to be introduced from the through hole 31. The position of the extending end of each groove 32 is preferably set to be inside the outer edge of the electronic device 10 to which it is fixed. The device support 1 can supply gas between the second surface 10b of the electronic device 10 and the first surface 30a of the base die 30 via the through hole 21 of the base wafer 20, the through hole 31 of the base die 30, and each groove 32. As a result, the device support 1 can promote the delamination of the electronic device 10.

[0040] As shown in Figure 3B, each base die 30 is bonded to the flat first surface 20a of the base wafer 20, so that one side of the carrier 2 has an uneven surface. Each base die 30 is arranged in a matrix on the first surface 20a of the base wafer 20.

[0041] As shown in Figure 4, the width 30w of each base die 30 is preferably set to an appropriate dimension according to the width 10w of the electronic device 10 fixed to the first surface 30a. For example, if the width 10w of each electronic device 10 is 10 mm, the width 30w of each base die 30 is preferably set to a range of about 11 mm to 15 mm. In this embodiment, the width 30w of each base die 30 is 12 mm.

[0042] Furthermore, it is preferable to provide a certain clearance between adjacent base dies. As described above, if the width 30w of each base die 30 is 12 mm, the distance D1 between the centers of each base die 30 can be set to a range of, for example, 12 mm to 18 mm. In this embodiment, the distance D1 is 13 mm. As a result, the distance between the centers of the electronic devices 10 fixed on each base die 30 is also 13 mm. In addition, the distance D2 (clearance width) between adjacent base dies 30 can be set to a range of 0 mm to 3 mm. In this embodiment, the distance D2 is 1 mm.

[0043] Returning to FIG. 2, the second surface 10b of each electronic device 10 is fixed to the first surface 30a of each base die 30 via the second bonding layer 42. The second bonding layer 42 bonds the electronic device 10 and the base die 30 with a smaller bonding force than the first bonding layer 41. Examples of the bonding method for the second bonding layer 42 include hydrogen bonding (bonding by intermolecular force) or adhesion with suppressed bonding force. In hydrogen bonding, the second surface 10b of the electronic device 10 and the first surface 30a of the base die 30 are hydrophilized, and the electronic device 10 and the base die 30 are bonded to each other via their respective hydrophilic groups (OH groups). Such a second bonding layer 42 fixes each electronic device 10 immovably on each base die 30, and allows each electronic device 10 to be easily detached from each base die 30 by a peeling operation.

[0044] The device support 1 according to the first embodiment is basically configured as described above. Hereinafter, a processing flow of forming and inspecting the device support 1 will be described with reference to FIG. 5. FIG. 5 is a diagram schematically showing a processing flow of an inspection method using the device support 1.

[0045] The wafer providing step shown in FIG. 5 corresponds to step S103 of the inspection method according to the first embodiment in FIG. 1A. That is, by laminating singulated device cores on each logic die of a logic wafer in the manufacturing process, a logic wafer 100 having a plurality of electronic devices 10 formed on one surface thereof is provided. Each electronic device 10 on the logic wafer 100 has the device core side exposed at an upper portion.

[0046] Next, in the inspection method, the logic wafer 100 is conveyed to a cleaning apparatus 300, and a wafer cleaning step of cleaning each electronic device 10 on the logic wafer 100 is performed. For example, the cleaning apparatus 300 has a nozzle 301 disposed above the logic wafer 100, and discharges a processing liquid from the nozzle 301 while rotating the logic wafer 100, thereby spreading the processing liquid over the entire surface of the logic wafer 100. As a result, the second surface 10b (device core) side of each electronic device 10 is subjected to hydrophilic treatment. As another example of the hydrophilic treatment, it is also possible to convey the logic wafer 100 into a plasma space and perform the treatment by plasma processing.

[0047] Further, in the inspection method, a dicing step (step S104 in FIG. 1) of dicing each electronic device 10 of the logic wafer 100 is performed. In the dicing step, for example, the divided electronic devices 10 are placed and attached to a holding jig 200 having a dicing tape 201 and a dicing frame 202. Note that in the manufacturing process, the order of the wafer cleaning step and the dicing step may be reversed.

[0048] Thereafter, in the inspection method, a device bonding step (step S105 in FIG. 1A) of bonding each singulated electronic device 10 to the carrier 2 is performed. The carrier 2 used in this device bonding step is prepared in a step separate from the above steps.

[0049] Specifically, the inspection method includes a carrier providing step of providing a base wafer 20. Note that each through hole 21 provided in the base wafer 20 may be pre-formed in the base wafer 20 before the carrier providing step, or may be formed together with the through holes 31 after bonding the base dies 30.

[0050] Then, in the inspection method, after the carrier providing step, a base die bonding step of bonding each base die 30 to the first surface 20a of the base wafer 20 is performed. In the base die bonding step, each base die 30 is arranged in a matrix at designed intervals, and is firmly fixed to the first surface 20a of the base wafer 20 by the first bonding layer 41. Thereby, the carrier 2 is formed.

[0051] Subsequently, the inspection method involves transporting the carrier 2 to a cleaning device 300 and performing a carrier cleaning process to clean the carrier 2. The cleaning device 300 may be the same as the device used for cleaning the logic wafer 100, or it may be a different device. This process hydrophilizes the first surface 30a of each base die 30 of the carrier 2. The carrier 2 that has undergone this carrier cleaning process is then used in the device bonding process.

[0052] In the device bonding process, each piece of electronic device 10 held in the holding jig 200 is transferred to each base die 30 of the carrier 2, and each electronic device 10 is bonded to each base die 30. As described above, the second surface 10b of the electronic device 10 is hydrophilized in the wafer cleaning process, and the first surface 30a of the base die 30 is hydrophilized in the carrier cleaning process, so that each electronic device 10 and each base die 30 can be bonded by hydrogen bonding. For example, a device support 1 is formed by bonding an electronic device 10 to each of the base dies 30. However, the device support 1 may be in a form in which some of the base dies 30 do not have electronic devices 10 bonded to them.

[0053] The inspection method involves transporting the device support 1 formed in the device bonding process to the inspection device 400, and performing an inspection process (step S106 in Figure 1A) in which each electronic device 10 is inspected by the inspection device 400. The inspection device 400 includes a probe card 401 connected to a tester (not shown). The probe card 401 also has a plurality of probes 402 that protrude vertically downward. The inspection device 400 moves the device support 1 using a stage (not shown) and performs an electrical inspection of each electronic device 10 by bringing the electrode pads or bumps of each electronic device 10 on the device support 1 into contact with each probe 402.

[0054] In the inspection of the device support 1, each electronic device 10 is immovably fixed to a rigid carrier 2 made of a material containing at least one of silicon and carbon. This allows the inspection device 400 to suppress displacement of each electronic device 10 and stably inspect each electronic device 10. Furthermore, when adjusting the temperature during inspection, the carrier 2 reduces thermal resistance and smoothly transfers the heat adjusted on the stage to each electronic device 10. Therefore, the carrier 2 can improve the efficiency and accuracy of the inspection of each electronic device 10. In other words, by combining both the carrier 2 and the inspection device 400 according to the first embodiment, an inspection system 500 for inspecting each electronic device 10 is formed.

[0055] After the inspection process is performed in the inspection system 500, the inspection method according to the first embodiment performs a peeling process (step S107 in Figure 1A) to peel each electronic device 10 from the carrier 2. In this peeling process, for example, a peeling device (not shown) is used to supply gas (air, inert gas, etc.) from the second surface 20b side of the base wafer 20 through through holes 21 and 31 to promote the peeling of each electronic device 10 from each base die 30. In addition, peeling pins may be inserted into the through holes 21 and 31 to push the electronic device 10 out from the base die 30 during the peeling of the electronic device 10.

[0056] Each electronic device 10, peeled off from each base die 30, is transferred, for example, to a dicing tape 201 on a holding jig 200. Then, each electronic device 10 held in the holding jig 200 is provided to an electronic circuit having a GPU and mounted on the electronic circuit.

[0057] On the other hand, after each electronic device 10 has been detached in the detachment process, the carrier 2 is transported to, for example, a cleaning device 300 and subjected to a cleaning process. As a result, particles and other debris are removed from the carrier 2, and the first surface 30a of each base die 30 is treated to become hydrophilic. Therefore, the carrier 2 can be reused for inspection of the electronic devices 10.

[0058] As described above, the inspection method according to the first embodiment adopts a configuration in which multiple electronic devices 10, which have been fragmented by the carrier 2, are supported, making it possible to inspect each electronic device 10 well before it is mounted on an electronic circuit. For example, if the inspection is performed in a configuration in which the devices are held on a dicing tape 201 and a dicing frame 202, there is a problem in that it is difficult to accurately position each electronic device 10 relative to each probe 402. In contrast, by applying the carrier 2, the position of each electronic device 10 can be accurately positioned.

[0059] Furthermore, the carrier 2, inspection system 500, and inspection method relating to this disclosure are not limited to the first embodiment described above, and can be modified in various ways. For example, the carrier 2 may not only be used for inspection, but may also be configured to hold each electronic device 10 for other substrate processing. Other substrate processing methods include liquid treatment, heat treatment, cleaning treatment, etc.

[0060] For example, if the carrier 2 can detach the electronic device 10 from the base die 30 by a lateral or longitudinal load, the base wafer 20 and each base die 30 do not need to have through holes 21 and 31. Also, if the electronic device 10 can be detached using the through holes 21 and 31, the base die 30 does not need to have grooves 32.

[0061] Furthermore, the carrier 2 is not limited to a configuration in which each of the multiple base dies 30 supports one electronic device 10; it may also adopt a configuration in which multiple base dies 30 support one electronic device 10. For example, the peripheral areas of the four corners of one electronic device 10 may be supported by four base dies 30. Moreover, the multiple base dies 30 are not limited to being placed at separate positions with clearances between them; they may also be placed side by side so as to be in contact with each other. This makes it possible to increase the number of electronic devices 10 that can be installed and to perform inspections efficiently.

[0062] Furthermore, the modified device support 1α shown in Figure 2B differs from the above-described device support 1 in that it vacuum-adsorbs each electronic device 10 placed on each base die 30 by stacking a sealing wafer 45 on the base wafer 20 to block the through holes 21 and 31. Specifically, the device bonding process (see Figure 5) in which each electronic device 10 is bonded to each base die 30 is performed in a vacuum atmosphere. As a result, with each electronic device 10 placed on each base die 30, the through holes 21 and 31 of the carrier 2 become a vacuum atmosphere. In this state, when the sealing wafer 45 is stacked on the second surface 20b of the base wafer 20 to block the through holes 21 and 31, the device support 1α can vacuum-adsorb each electronic device 10 with appropriate pressure due to the vacuum pressure in each through hole 21 and 31.

[0063] Therefore, in the inspection process (inspection apparatus 400) of the inspection method, it becomes possible to inspect each electronic device 10 while it is more securely fixed. Furthermore, in the peeling process after inspection, by removing the sealing wafer 45 from the base wafer 20, each through-hole 21, 31 becomes an atmospheric environment, and the adsorption of each electronic device 10 can be eliminated. In addition, in the peeling process, gas may be supplied to each through-hole 21, 31 that has been opened by removing the sealing wafer 45 to promote the peeling of each electronic device 10. This makes it possible to smoothly peel off each electronic device 10 even if each electronic device 10 is in close contact with the base die 30.

[0064] <Second Embodiment> Figure 6 is a schematic partial cross-sectional view showing the inspection state of the inspection system 500A according to the second embodiment. As shown in Figure 6, the inspection system 500A according to the second embodiment differs from the inspection system 500 according to the first embodiment in that the temperature of each electronic device 10 can be adjusted by the base die 30A of the carrier 2. In other words, the base die 30A has a circuit that can be used for substrate processing such as inspection.

[0065] Specifically, the base die 30A includes a temperature control mechanism 50. The temperature control mechanism 50 comprises a heater wire 51, a switch 52 for switching the supply of power to the heater wire 51 on and off, and a temperature sensor 53 for detecting the temperature of the electronic device 10. The heater wire 51, the switch 52, and the temperature sensor 53 are wired to electrode pads individually provided on the first surface 30a of the base die 30A. Each electrode pad of the base die 30A is exposed around the electronic device 10 so as to face each probe 402 of the inspection device 400.

[0066] The inspection device 400 of the inspection system 500A is configured such that each probe 402 protruding from the probe card 401 not only contacts each electronic device 10 of the device support 1, but also contacts the electrode pads exposed on the base die 30A. That is, each probe 402 is composed of a device probe 403 that contacts each electronic device 10 and a die probe 404 that contacts each base die 30A.

[0067] In the case of multiple die probes 404, the die probe 404 connected to one end of the heater wire 51 is connected to a power module 411 located inside the tester 410 of the inspection device 400. The power module 411 can supply power to the heater wire 51 for temperature control. The power module 411 may be located outside the inspection device 400. On the other hand, the die probe 404 connected to the other end of the heater wire 51, the switch 52, and the temperature sensor 53 is connected to a controller 401a located inside the probe card 401.

[0068] The controller 401a detects the actual temperature using the temperature sensor 53 during inspection of the electronic device 10 and controls the on / off state of the switch 52 so that the actual temperature is maintained at the target temperature. This allows the base die 30A to adjust the temperature of the electronic device 10 to the target temperature at a position close to the electronic device 10. The inspection device 400 can adjust the temperature for each of the multiple electronic devices 10. The controller 401a may also be connected to a device probe 403 that contacts the electronic device 10 and controls the inspection of the electronic device 10. Alternatively, the controller 401a may be located inside the tester 410 instead of on the probe card 401.

[0069] For example, the inspection apparatus 400 can also adjust the temperature of the electronic device 10 by providing a flow path 420a in the stage 420 that supports the device support 1 and circulating a temperature control medium through the flow path 420a. However, when using the stage 420, there is a distance between the electronic device 10 and the stage 420, and the temperature adjustment is performed via multiple components, which can lead to a time lag in adjusting the temperature of each electronic device 10 and a decrease in the accuracy of the temperature adjustment. In contrast, the inspection system 500A can efficiently and accurately adjust the temperature of each electronic device 10 by providing a temperature adjustment mechanism 50 in the base die 30A on which each electronic device 10 is mounted. The inspection system 500A may also adjust the temperature of each electronic device 10 using the temperature adjustment mechanism 50 while circulating a temperature control medium through the flow path 420a.

[0070] <Third Embodiment> Figure 7 is a schematic partial cross-sectional view showing the inspection state of the inspection system 500B according to the third embodiment. As shown in Figure 7, the inspection system 500B according to the third embodiment differs from the inspection systems 500 and 500A described above in that the electronic device 10 to be inspected is a silicon photonic device.

[0071] In this case, the electronic device 10 is provided with a light-receiving port on its second surface 10b for receiving light into the silicon photonics device. Alternatively, the electronic device 10 may be provided with a light-emitting port on its second surface 10b that can emit light from the silicon photonics device.

[0072] On the other hand, the base die 30B of the device support 1 is equipped with an internal light transmission mechanism 60 that guides light to the light receiving port of the electronic device 10, or guides light from the light emitting port to the outside. The light transmission mechanism 60 has an optical path 61 that runs from the first surface 30a of the base die 30B through the interior and connects to another location on the first surface 30a. An opening at one end of the optical path 61 faces the light receiving port or light emitting port on the back surface (second surface 10b) of the electronic device 10, and an opening at the other end of the optical path 61 is provided on the exposed surface around the electronic device 10.

[0073] The inspection device 400 includes a plurality of probes 402, along with the device probes 403 described above, and a light guide probe 405 connected to the optical path 61 of the base die 30B. The light guide probe 405 has an internal light guide path that allows light to pass through without attenuation. The light guide probe 405 is connected to an irradiation device 412 (or light receiving device) located inside the tester 410 via a light guide path provided on the probe card 401.

[0074] For example, the irradiation device 412 directs light into the light-receiving port of the electronic device 10 via the optical path 61 of the light-guiding probe 405 and the base die 30B. The inspection device 400 can inspect the electronic device 10, which is a silicon photonics device, by receiving the signal when light is directed into the electronic device 10 with the probe card 401 and the tester 410. Alternatively, the light-receiving device receives the light emitted from the light-emitting port of the electronic device 10 via the optical path 61 of the light-guiding probe 405 and the base die 30B. The inspection device 400 can inspect the electronic device 10, which is a silicon photonics device, by transmitting an electrical signal to the electronic device 10 and receiving the light emitted by the electronic device 10 with the light-receiving device.

[0075] <Fourth Embodiment> Figure 8 is a schematic partial cross-sectional view showing the inspection state of the inspection system 500C according to the fourth embodiment. As shown in Figure 8, the inspection system 500C according to the fourth embodiment also uses a silicon photonic device as the electronic device 10 to be inspected. However, the inspection system 500C differs from the third embodiment in that it is possible to input or output light from the side of the electronic device 10.

[0076] Specifically, the probe 402 of the inspection device 400 has a light guide probe 406 that protrudes from the probe card 401, curves at an intermediate position, and extends laterally. The light guide probe 406 is capable of transmitting light without attenuation even in this curved portion. The tip of the light guide probe 406 contacts the second bonding layer 42 between the second surface 10b of the electronic device 10 and the first surface 30a of the base die 30C. Alternatively, the light guide probe 406 may be configured to transmit light between the second surface 10b and the first surface 30a (the second bonding layer 42) using a grating coupler or the like, either in place of or together with the curved portion. For example, the grating coupler is formed as a diffraction grating element capable of efficiently inputting, outputting, or coupling light in the waveguide within the light guide probe 406, and is connected to the tip of the light guide probe 406 at an appropriate angle between the second surface 10b and the first surface 30a. Even in this case, the light guide probe 406 can adequately guide light to the electronic device 10 while refracting the light.

[0077] A light guide groove 62 (optical path) may be formed on the first surface 30a of the base die 30C, which allows light from the light guide probe 406 to be guided. The light guide groove 62 allows light to be transmitted from the side to the light receiving or light emitting port of the electronic device 10 when, for example, the light guide probe 406 is positioned and its tip is in contact with the second bonding layer 42. Therefore, the electronic device 10, which is a silicon photonics device, can also be inspected well by the inspection system 500C.

[0078] <Fifth Embodiment> Figure 9 is a schematic partial cross-sectional view showing the inspection state of the inspection system 500D according to the fifth embodiment. The inspection system 500D according to the fifth embodiment differs from the inspection systems 500, 500A to 500C described above in that a reference device 70 of the device to be assembled with the electronic device 10 (for example, a high-level processor such as a GPU) is mounted on the device support 1. The inspection system 500D is capable of sending and receiving signals between this reference device 70 and each electronic device 10.

[0079] Specifically, the reference device 70 is the actual device to be combined, and is fixed to the base wafer 20, capable of properly inputting and outputting signals. Furthermore, the installation position of the reference device 70 is adjusted so that each electrode pad faces each probe 402 of the inspection device 400. Although Figure 9 shows an example in which the reference device 70 is bonded to a base die 30D for the reference device 70, the reference device 70 may also be fixed directly to the base wafer 20 without the base die 30D.

[0080] The probe card 401 of the inspection device 400 has a plurality of device probes 403 and a plurality of reference device probes 407 that contact each electrode pad of the reference device 70. Some of the device probes 403 are connected to the power module 414 in the tester 410. Also, some of the reference device probes 407 are connected to the remote controller 413 in the tester 410. The remote controller 413 has the function of supplying power for driving the reference device 70 and outputting drive commands for the reference device 70.

[0081] Furthermore, the probes 403 for each device and the probes 407 for each reference device are interconnected within the probe card 401. This allows, for example, a signal output from the reference device 70 via the reference device probe 407 to be transmitted to the electronic device 10 via the probe card 401 and the device probes 403, and the behavior of the electronic device 10 at this time can be confirmed.

[0082] In this way, the inspection system 500D can check for incompatible combinations between the electronic device 10 and the device to be actually assembled by using the same reference device 70 as the device to be assembled. As a result, when mounting the electronic device 10 into an electronic circuit containing the device, it is possible to assemble only the electronic device 10 that is free of defects, excluding the electronic device 10 with incompatible combinations.

[0083] <Sixth Embodiment> Figure 10 is a schematic partial cross-sectional view showing the inspection state of the inspection system 500E according to the sixth embodiment. The inspection system 500E according to the sixth embodiment differs from the above inspection systems 500, 500A to 500D in that, similar to the fifth embodiment, it transmits and receives signals between the reference device 70 of the device support 1 and each electronic device 10, and is equipped with temperature control mechanisms 50 and 55.

[0084] In this case, the temperature control mechanism 50 is configured in the same way as in the first embodiment, by installing a heater wire 51, a switch 52, and a temperature sensor 53 inside the base die 30A, and adjusts the temperature of each electronic device 10. On the other hand, the temperature control mechanism 55 is provided inside the base die 30E for the reference device 70 and adjusts the temperature of the reference device 70. The temperature control mechanism 55 has a heater wire 51, a switch 52, and a temperature sensor 53, similar to the temperature control mechanism 50. The reference device 70 according to this embodiment may be configured to be detachably fixed to the base die 30E. In this case, the reference device 70 may be a device (GPU) that is actually mounted in the electronic circuit together with the electronic devices 10. In short, in the sixth embodiment, the device that is actually mounted in the electronic circuit and the electronic devices 10 can be temporarily connected by the inspection system 500E to inspect for compatibility issues. After the inspection is completed, both the device and the electronic devices 10 can be detached from the carrier 2 and mounted in the same electronic circuit, thereby enabling the electronic circuit to operate more reliably.

[0085] Each probe 402 of the inspection device 400 includes a device probe 403, a die probe 404, a reference device probe 407, and a die probe 408. The die probe 408 is connected to the heater wire 51, switch 52, and temperature sensor 53 of the temperature control mechanism 50. The die probe 408 is also connected to a controller 401b located inside the tester 410. The temperature control mechanism 55 can adjust the temperature of the reference device 70 based on the control of the controller 401b.

[0086] The inspection system 500E described above can perform inspections while adjusting both the temperature of the electronic device 10 and the temperature of the reference device 70. This allows the inspection system 500E to pre-check for compatibility issues between the device and the electronic device 10 while changing the temperature.

[0087] <Seventh Embodiment> Figure 11 is a schematic partial cross-sectional view showing the inspection state of the inspection system 500F according to the seventh embodiment. The inspection system 500F according to the seventh embodiment differs from the inspection systems 500, 500A to 500E described above in that it has a function to acquire log information during the inspection of the electronic device 10.

[0088] Specifically, the inspection system 500F includes a log recording device 80 that stores information from the tester 410, information from the electronic device 10, information from sensors installed in the base die 30F, and so on. The probe 402 of the inspection device 400 includes a device probe 403, a die probe 404, and a carrier probe 409 that contacts the base wafer 20.

[0089] The carrier probe 409 is connected to the power module 414 of the tester 410 and also to the log recording device 80 via wiring 81 in the base wafer 20 to which it makes contact. The base wafer 20 and the base die 30F are also connected via bonding wire 82 to enable information communication. The die probe 404 to which this bonding wire 82 is connected may be connected to the electronic device 10, for example, via wiring in the probe card 401 and a device probe 403. As a result, the log recording device 80 can acquire information from the electronic device 10 via the base die 30F and the base wafer 20.

[0090] Figure 11 shows an example in which an I / F connection port is provided in the stage 420 that is electrically connected to the wiring 81 in the base wafer 20, and is connected through the stage 420 to a log recording device 80 provided in a prober device (not shown). However, the connection between the device support 1 and the log recording device 80 is not limited to this and can take various forms. For example, the log recording device 80 may be directly connected to the base wafer 20 to transmit data. The means for transmitting data to the log recording device 80 is not particularly limited, and I2C communication, CAN communication, etc. may be applied.

[0091] The log information read by the log recording device 80 includes not only inspection information of the electronic device 10, but also temperature information, the operating rate of the heater wire 51 of the temperature control mechanism 50, and power (current, voltage, etc.) information sensed by the power module 414 or probe card 401. By storing various log information from the inspection in the log recording device 80 in this way, the state of the electronic device 10 or the state of the base die 30 can be recognized. This makes it possible to appropriately determine the timing of maintenance or replacement of the carrier 2.

[0092] <Eighth Embodiment> Figure 12 is a schematic partial cross-sectional view showing the inspection state of the inspection system 500G according to the eighth embodiment. The inspection system 500G according to the eighth embodiment differs from the inspection systems 500, 500A to 500F described above in that it is configured to perform contactless communication and / or contactless power supply between the electronic device 10 and the base die 30. In Figure 12, a structure for performing contactless communication between the electronic device 10 and the base die 30 is illustrated.

[0093] In this case, a communication antenna module 36 for contactless communication is provided inside the base die 30G and in close proximity to the first surface 30a. For example, the communication antenna module 36 is positioned opposite a communication antenna module 16 provided inside the electronic device 10 and is configured to perform short-range wireless communication. Note that the communication antenna modules 16 and 36 do not need to be positioned opposite each other as long as they can perform short-range wireless communication. The communication antenna module 36 is connected to electrode pads provided on the first surface 30a of the base die 30G via wiring that passes through the base die 30G.

[0094] The die probe 404 of the inspection device 400 is connected to the electrode pads of the base die 30G and also to the communication information processing unit 415 located in the tester 410. This allows the inspection device 400 to easily obtain information transmitted from the communication antenna module 16 of the electronic device 10 via the communication antenna module 36 of the base die 30G and the die probe 404. Cleanliness is particularly important at the junction of the electronic device 10 and the base die 30, and this non-contact communication method can enhance cleanliness.

[0095] In Figure 12, the power supply module 411 is configured to supply power to the electronic device 10 via the device probe 403. However, the inspection system 500G can also perform contactless power supply to the electronic device 10 by installing a power supply antenna module, similar to the communication antenna modules 16 and 36.

[0096] <Ninth Embodiment> Figure 13A is a schematic partial cross-sectional view showing the inspection state of the inspection system 500H according to the ninth embodiment. Figure 13B is a perspective view showing the positioning of the carrier 2 and the stage 420. The inspection system 500H according to the ninth embodiment differs from the above-described inspection systems 500, 500A to 500G in that it has a positioning structure that positions the base wafer 20 of the carrier 2 when it is placed on the stage 420.

[0097] One example of a positioning structure is to provide mutually engaging protrusions and recesses on the second surface 20b of the base wafer 20 and the upper surface of the stage 420. In Figures 13A and 13B, a protrusion 22 is formed on the base wafer 20, while a recess 421 is formed on the stage 420. Note that the positioning structure (protrusion 22, recess 421) is not limited to one, but may be provided in multiples. Alternatively, a recess may be formed on the base wafer 20 while a protrusion is formed on the stage 420. When providing multiple positioning structures, the stage 420 may be provided with both a recess and a protrusion, and the base wafer 20 may be provided with a protrusion and a recess opposite to it.

[0098] The protrusion 22 is formed, for example, in an L-shape in plan view and protrudes low from the second surface 20b. The protrusion 22 may be cut from a silicon wafer. In this case, the protrusion 22 may be joined to the base wafer 20 using bonding techniques such as fusion bonding, or it may be joined using an adhesive. Furthermore, the protrusion 22 is not limited to an L-shape; triangular, circular, cross-shaped, or other shapes may be applied. The same applies to the recess 421.

[0099] By applying this positioning structure, the base wafer 20 can be easily positioned by inserting the protrusion 22 of the base wafer 20 into the recess 421 of the stage 420. As a result, the inspection system 500H can make contact with each electronic device 10 and each base die 30 on the base wafer 20 and each probe 402 with greater precision.

[0100] <Modified Versions> Figure 14A is a plan view showing a part of the base wafer 20 and each base die 30 according to a modified version. Figure 14B is a plan view showing the entire base wafer 20 according to a modified version. Furthermore, as shown in the modified versions in Figures 14A and 14B, the carrier 2A may be provided with one or more alignment marks to improve the positional accuracy in the installation of the electronic device 10, base die 30, etc. That is, when each probe 402 of the probe card 401 is made contact with the fragmented electronic device 10 and base die 30 all at once, the electronic device 10 and base die 30 need to be fixed with appropriate positional accuracy (error of ±1 μm relative to the reference position).

[0101] Therefore, the carrier 2A can improve its positional accuracy when fixed by applying alignment marks to the base wafer 20 and each base die 30. The alignment marks are printed using, for example, a laser or photolithography. Examples of alignment marks include multiple carrier local alignment marks 23 printed near each base die 30 on the base wafer 20, and multiple base die local alignment marks 33 printed on the base die 30. In addition, carrier global alignment marks 24 indicating the position of all multiple base dies 30 on the base wafer 20 may also be printed. Note that a portion of the carrier local alignment marks 23 may be used as carrier global alignment marks 24. The size, shape, quantity, etc. of the various alignment marks may be arbitrarily defined according to the alignment mechanism, the magnification of the camera lens, the available space, and the required accuracy.

[0102] The carrier global alignment mark 24 is a rough alignment mark used to locate each carrier local alignment mark 23. The carrier local alignment mark 23 is used as a position target mark when mounting each base die 30. Furthermore, the base die local alignment mark 33 is a mark used to confirm the positional relationship with the carrier local alignment mark 23 when bonding each base die 30 to the base wafer 20. For example, a transport device that transports each base die 30 individually and bonds them to the base wafer 20 recognizes the positional relationship of the base die local alignment mark 33 with respect to the carrier local alignment mark 23. Figure 14A shows an example in which the base dies 30 are individually bonded so that each base die local alignment mark 33 is positioned at a 45° angle to each carrier local alignment mark 23 with the symbol +. Also, for example, the base die local alignment mark 33 is used to recognize the positional relationship of the electronic device 10 with respect to the base die 30. As an example, the electronic device 10 is positioned and bonded such that its corner is at a 45° angle to the base die local alignment mark 33.

[0103] By applying alignment marks in this way, each electronic device 10 and each base die 30 can be precisely positioned. This allows the inspection system to make more precise contact between each electronic device 10 and each base die 30 on the base wafer 20 and each probe 402.

[0104] <Note> The technical concept and effects of this disclosure described in the embodiments above are described below.

[0105] A first aspect of the present disclosure is a carrier 2 for supporting a plurality of divided electronic devices 10 together, comprising a flat base (base wafer 20) and a plurality of base dies 30 provided on one side of the base, to which the plurality of electronic devices 10 are detachably fixed, wherein the base and the plurality of base dies 30 are formed of a material containing at least one of silicon and carbon.

[0106] As described above, the carrier 2 can stably fix the divided electronic devices 10 using a base (base wafer 20) and a plurality of base dies 30 formed from a material containing at least one of silicon and carbon. This makes it possible to accurately bring the plurality of electronic devices 10 supported by the carrier 2 into contact with the plurality of probes 402 when inspecting the plurality of electronic devices 10, and to perform the inspection appropriately. Moreover, the base and each base die 30, formed from a material containing at least one of silicon and carbon, can smoothly transfer heat to each electronic device 10, allowing for efficient heating and cooling of each electronic device 10.

[0107] Furthermore, the base (base wafer 20) and the plurality of base dies 30 have through holes 21 and 31 that can communicate with the back surfaces of the plurality of electronic devices 10 fixed to the plurality of base dies 30. As a result, the carrier 2 can supply gas to the back surface of each electronic device 10 through the through holes 21 and 31, thereby promoting the separation of each electronic device 10 from each base die 30.

[0108] Furthermore, each of the multiple base dies 30 has grooves 32 on the surface where the multiple electronic devices 10 are fixed, which communicate with the through holes 31. This allows the carrier 2 to allow the gas supplied through the through holes 21 and 31 to flow into the grooves 32 as well, further promoting the detachment of each electronic device 10.

[0109] Furthermore, a blocking member (blocking wafer 45) is laminated on the other side of the base (base wafer 20) that is opposite to one side of the base (base wafer 20) to block the through-holes 21 and 31 of the vacuum atmosphere. As a result, the carrier 2 vacuum-adsorbs and fixes each electronic device 10 through the through-holes 21 and 31 of the vacuum atmosphere, while removing the blocking member releases the vacuum atmosphere and allows each electronic device 10 to be detached.

[0110] Furthermore, each of the multiple base dies 30 can be fixed with one of the multiple electronic devices 10. This allows the carrier 2 to firmly fix the electronic devices 10 to each of the multiple base dies 30, enabling stable execution of inspections and other operations.

[0111] Furthermore, the multiple base dies 30 are arranged in a matrix on one side, and clearances are provided between adjacent base dies 30. This allows the carrier 2 to fix each electronic device 10 with spacing between them, thereby suppressing the thermal effects between each electronic device 10 and enabling inspection and other operations to be performed.

[0112] Furthermore, the base (base wafer 20) and the multiple base dies 30 are formed from separate materials and fixed to each other via a first bonding layer 41. The multiple base dies 30 and the multiple electronic devices 10 are fixed to each other via a second bonding layer 42, and the bonding force of the second bonding layer 42 is smaller than the bonding force of the first bonding layer 41. As a result, the carrier 2 can firmly integrate the base and each base die 30 while allowing each electronic device 10 to be detachably fixed.

[0113] Furthermore, the base die 30 has an internal temperature control mechanism 50 for adjusting the temperature of the fixed electronic device 10. This temperature control mechanism 50 allows the carrier 2 to adjust the temperature of the electronic device 10 at a position close to the electronic device 10. For example, the temperature of the electronic device 10 can be easily adjusted during inspection.

[0114] Furthermore, the base die 30 has an internal optical path 61 that can transmit light to the fixed electronic device 10. This allows the carrier 2 to guide light to the electronic device 10, which is a photonic device, through the optical path 61 of the base die 30.

[0115] Furthermore, one of the base (base wafer 20) and the multiple base dies 30 includes a reference device 70 that has the same function as the device on which the electronic device 10 is assembled. This allows the carrier 2 to confirm any mismatches or other issues with the device on which the electronic device 10 is actually assembled.

[0116] Furthermore, the base (base wafer 20) and the multiple base dies 30 have wiring 81 that conducts electrical signals with the probe 402 of the inspection device 400 upon contact with the probe 402. This allows the carrier 2 to perform various operations on each electronic device 10 through the inside of the base and each base die 30.

[0117] Furthermore, each of the multiple base dies 30 has an antenna (communication antenna module 36) that communicates with or supplies power to the fixed electronic device 10 without contact. As a result, the carrier 2 can suppress the generation of particles at the fixing points between each base die 30 and each electronic device 10, thereby improving cleanliness and enabling each electronic device 10 to be fixed more stably.

[0118] Furthermore, a second aspect of the present disclosure is an inspection system 500, 500A to 500H for inspecting a plurality of electronic devices 10, comprising a carrier 2 that collectively supports a plurality of divided electronic devices 10, and a probe card 401 having a plurality of probes 402 that contact the plurality of electronic devices 10 supported by the carrier 2, wherein the carrier 2 comprises a flat base (base wafer 20) and a plurality of base dies 30 provided on one side of the base, to which the plurality of electronic devices 10 are detachably fixed, and the base and the plurality of base dies 30 are formed of a material containing at least one of silicon and carbon. In this case as well, the inspection system 500, 500A to 500H can stably fix the plurality of divided electronic devices 10 by the carrier 2, thereby enabling appropriate inspection of each electronic device 10.

[0119] Furthermore, the multiple probes 402 include a device probe 403 that contacts the electronic device 10 and a die probe 404 that contacts the base die 30. This allows the inspection systems 500, 500A to 500H to access the base die 30 via the die probe 404 and perform various processes.

[0120] Furthermore, the multiple probes 402 have different heights: the device probe 403 that contacts the electronic device 10 and the die probe 404 that contacts the base die 30. This allows the inspection systems 500, 500A to 500H to stably contact each probe 402 with each electrode pad while appropriately distributing the contact pressure of each probe 402.

[0121] Furthermore, a third aspect of the present disclosure is an inspection method for inspecting a plurality of electronic devices 10 in a carrier 2 that collectively supports a plurality of divided electronic devices 10, wherein the carrier 2 comprises a flat base (base wafer 20) and a plurality of base dies 30 provided on one side of the base to which the plurality of electronic devices 10 are detachably fixed, and the base and the plurality of base dies 30 are formed of a material containing at least one of silicon and carbon, and the inspection method comprises the steps of fixing each of the plurality of electronic devices 10 to the plurality of base dies 30 and inspecting the plurality of electronic devices 10 supported on the carrier 2 by bringing a plurality of probes 402 of a probe card 401 into contact with the plurality of electronic devices 10.

[0122] Even in this case, the inspection method allows the carrier 2 to stably fix the multiple divided electronic devices 10, thereby enabling proper inspection of each electronic device 10.

[0123] The carrier 2, inspection systems 500, 500A to 500H, and inspection methods according to the embodiments disclosed herein are illustrative and not restrictive in all respects. The embodiments can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The matters described in the above embodiments can be configured in other ways and combined in a non-consistent manner.

[0124] This application claims priority to US63 / 764668, provisionally filed with the United States Patent and Trademark Office on 28 February 2025, and to Japanese Patent Application No. 2026-014615, a domestic priority application filed with the Japan Patent Office on 30 January 2026, the full contents of which are incorporated herein by reference.

[0125] 2 Carriers 10 Electronic Devices 20 Base Wafers 30 Base Dies 500, 500A-500H Inspection Systems

Claims

1. A carrier for collectively supporting a plurality of divided electronic devices, comprising: a plate-shaped base; and a plurality of base dies provided on one side of the base, to which the plurality of electronic devices are detachably fixed, wherein the base and the plurality of base dies are formed of a material containing at least one of silicon and carbon.

2. The carrier according to claim 1, wherein the base and the plurality of base dies have through holes that can communicate with the back surfaces of the plurality of electronic devices fixed to the plurality of base dies.

3. The carrier according to claim 2, wherein the plurality of base dies have grooves on the surface on which the plurality of electronic devices are fixed that communicate with the through holes.

4. The carrier according to claim 2, wherein a blocking member is laminated on the other side of the base opposite to the one side of the base, to block the through hole in a vacuum atmosphere.

5. The carrier according to any one of claims 1 to 4, wherein each of the plurality of base dies is capable of fixing one of the plurality of electronic devices.

6. The carrier according to any one of claims 1 to 4, wherein the plurality of base dies are arranged in a matrix on the one surface, and clearances are provided between adjacent base dies.

7. The carrier according to any one of claims 1 to 4, wherein the base and the plurality of base dies are formed from separate materials and fixed to each other via a first bonding layer, the plurality of base dies and the plurality of electronic devices are fixed to each other via a second bonding layer, and the bonding force of the second bonding layer is less than the bonding force of the first bonding layer.

8. The carrier according to any one of claims 1 to 4, wherein the base die has an internal temperature control mechanism for adjusting the temperature of the fixed electronic device.

9. The carrier according to any one of claims 1 to 4, wherein the base die has an internal optical path capable of transmitting light to and from the fixed electronic device.

10. The carrier according to any one of claims 1 to 4, wherein one of the base and the plurality of base dies comprises a device on which the electronic device is assembled or a reference device having the same function as the device.

11. The carrier according to any one of claims 1 to 4, wherein the base and the plurality of base dies have wiring that conducts with the probe of the inspection device upon contact with the probe.

12. The carrier according to any one of claims 1 to 4, wherein the plurality of base dies have antennas that communicate with or supply power to the fixed electronic device in a non-contact manner.

13. An inspection system for inspecting a plurality of electronic devices, comprising: a carrier for supporting a plurality of divided electronic devices together; and a probe card having a plurality of probes that contact the plurality of electronic devices supported by the carrier, wherein the carrier comprises: a flat base; and a plurality of base dies provided on one side of the base, to which the plurality of electronic devices are detachably fixed, and the base and the plurality of base dies are formed of a material containing at least one of silicon and carbon.

14. The inspection system according to claim 13, wherein the plurality of probes include a device probe that contacts the electronic device and a die probe that contacts the base die.

15. The inspection system according to claim 13, wherein the plurality of probes have different heights: a device probe that contacts the electronic device and a die probe that contacts the base die.

16. An inspection method for inspecting a plurality of electronic devices in a carrier that collectively supports a plurality of divided electronic devices, wherein the carrier comprises a flat base and a plurality of base dies provided on one side of the base, the plurality of electronic devices being detachably fixed to each of the base and the base and the plurality of base dies being formed from a material containing at least one of silicon and carbon, and the inspection method comprising the steps of fixing each of the plurality of electronic devices to the plurality of base dies and inspecting the plurality of electronic devices supported on the carrier by bringing a plurality of probes of a probe card into contact with the plurality of electronic devices.

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