Substrate processing apparatus

Abstract

According to an embodiment, the substrate processing apparatus comprises: a process chamber including a chamber body providing a processing space including first and second process areas and a top lid covering an upper open surface of the chamber body; a gas injection unit including a source gas injection unit and a reaction gas injection unit for injecting a source gas and a reaction gas to the first and second process areas, respectively, and a separation gas injection unit for injecting a separation gas for spatially separating the processing space; a substrate support unit on which a plurality of substrates are mounted; a temperature control unit including a first process temperature control unit for controlling the temperature of the source gas injection unit, a second process temperature control unit for controlling the temperature of the reaction gas injection unit, and a separation temperature control unit for controlling the temperature of the separation gas injection unit; and a control unit. The control unit may control the driving of the separation temperature control unit so that the temperature (T1) of the separation gas injection unit for injecting the separation gas to separate the first and second process regions reaches a temperature between the temperature (T2) of the source gas injection unit and the temperature (T3) of the reaction gas injection unit.

Description

Substrate processing device

[0001] The present invention relates to a substrate processing device.

[0002] Recently, substrate processing devices capable of processing multiple substrates are being utilized in the semiconductor device manufacturing process to improve productivity.

[0003] The substrate processing device may have a structure comprising: a process chamber including a processing space in which a plurality of process areas are sequentially formed along a circumferential direction; a substrate support installed inside the processing space and on which a plurality of substrates are placed; a gas injection unit including a plurality of first injection units installed opposite the substrate support inside the processing space and each injecting process gas onto a plurality of substrates; and a second injection unit formed between the plurality of first injection units and injecting separation gas. The substrate processing device may be utilized to perform an atomic layer deposition process, etc., by grouping a plurality of process areas.

[0004] Specifically, the substrate processing device may divide the processing space by grouping it into a first process area for injecting a source gas and a second process area for injecting a reaction gas. Additionally, the substrate processing device performs a substrate processing step in the first process area, transfers the substrate to the second process area, and then performs the next substrate processing step in the second process area.

[0005] However, the substrate processing device described above performs different substrate processing steps in a first process area and a second process area. Since there is a problem where the yield of the substrate processing process decreases and quality deteriorates if there is a large deviation between the process temperature of the step performed in the first process area and the process temperature performed in the second process area, research is needed on a method to compensate for this.

[0006] According to one embodiment, the invention aims to provide technical details regarding a substrate processing apparatus capable of improving the yield and quality of a substrate processing process even when there is a large variation in substrate processing temperature between multiple process regions.

[0007] A substrate processing apparatus according to an embodiment comprises: a process chamber including a chamber body providing a processing space including first and second process areas for depositing thin films on a plurality of substrates, and a top lid covering an upper open surface of the chamber body; a gas injection unit installed on the top lid and including a plurality of source gas injection units and a plurality of reaction gas injection units for injecting source gas and reaction gas, respectively into the first and second process areas, and a plurality of separation gas injection units disposed between the plurality of source gas injection units and the plurality of reaction gas injection units for injecting separation gas to spatially separate the processing space; a substrate support unit installed opposite to the gas injection unit, having the plurality of substrates placed on its upper surface, and rotatably installed in the process chamber; and a temperature control unit including a first process temperature control unit for controlling the temperature of the plurality of source gas injection units, a second process temperature control unit for controlling the temperature of the plurality of reaction gas injection units, and a separation temperature control unit for controlling the temperature of the plurality of separation gas injection units. The apparatus includes a control unit that controls the operation of the gas injection unit, the substrate support unit, and the temperature control unit, wherein the control unit can control the operation of the separation temperature control unit such that the temperature (T1) of the separation gas injection unit, which injects separation gas to separate the first process area and the second process area, is a temperature between the temperature (T2) of the source gas injection unit and the temperature (T3) of the reaction gas injection unit.

[0008] A substrate processing device according to an embodiment can improve the yield of a substrate processing process and improve quality by utilizing a separation gas in a separation area formed between a plurality of process areas during the process of transferring a substrate between a plurality of process areas for performing substrate processing steps with different process temperatures, thereby buffering the temperature difference between the process areas.

[0009] FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment.

[0010] FIG. 2 is a bottom view showing the top lead and gas injection section of a substrate processing apparatus according to an embodiment.

[0011] FIG. 3 is a cross-sectional view showing a substrate processing device equipped with a cartridge heater unit of Example 1, cut along the center line (C-C') in FIG. 2.

[0012] FIG. 4 is a perspective view showing a substrate support provided in a substrate processing device according to an embodiment.

[0013] FIG. 5 is a top view showing a top lead and a gas injection unit equipped with a process temperature control unit in a substrate processing apparatus according to one embodiment.

[0014] FIG. 6 is a cross-sectional view showing a substrate processing apparatus equipped with a heat exchange unit of Example 2, cut along the centerline (C-C') in FIG. 2.

[0015] FIG. 7 is a cross-sectional view showing a substrate processing apparatus equipped with a gas heating unit of Example 3, cut along the center line (C-C') in FIG. 2.

[0016] FIG. 8 is a process diagram showing a substrate processing method performed using a substrate processing device according to an embodiment.

[0017] Hereinafter, a substrate processing apparatus according to an embodiment will be described in detail.

[0018] FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment. FIG. 2 is a bottom view showing a top lead and a gas injection unit in a substrate processing apparatus according to an embodiment. FIG. 3 is a cross-sectional view showing a substrate processing apparatus equipped with a cartridge heater unit of Example 1, cut along the center line (C-C') in FIG. 2. FIG. 4 is a perspective view showing a substrate support unit provided in a substrate processing apparatus according to an embodiment. FIG. 5 is a top view showing a top lead and a gas injection unit equipped with a process temperature control unit in a substrate processing apparatus according to an embodiment.

[0019] Referring to FIGS. 1 and FIGS. 3, a substrate processing device according to an embodiment may include a process chamber (100), a gas injection unit (200), a substrate support unit (300), a temperature control unit, and a control unit (500).

[0020] Hereinafter, for convenience, a substrate processing device structured such that the processing space of the process chamber (100) is divided into four parts, and two of the divided spaces are grouped into a first process area (A1) and a second process area (A2) will be described in detail as an example. The structure of the substrate processing device shown in the drawing is merely an example to aid understanding, and the number of processing spaces and process areas (A1, A2) can be selectively adjusted as needed.

[0021]

[0022] The process chamber (100) may provide a processing space for performing a substrate processing process inside. A plurality of partitioned process areas (A1, A2) may each be formed in the processing space. Each of the process areas (A1, A2) may include a plurality of sub-process areas.

[0023] For example, the process area (A1, A2) may include a first process area (A1) that supplies source gas and a second process area (A2) that supplies reaction gas. The first process area (A1) may include two first sub-process areas, and the second process area (A2) may include two second sub-process areas. The number of the first and second sub-process areas may be selectively adjusted as needed.

[0024] The process chamber (100) may include a chamber body (110) that defines the processing space and a top lid (130) located at the top of the chamber body (110).

[0025] The above chamber body (110) has a structure in the shape of a container with an open top and can form a sealed processing space together with the top lid (130).

[0026] The top lid (130) is positioned to cover the open upper portion of the chamber body (110). The top lid (130) may have a structure in which a plurality of through holes are formed. Each of the plurality of through holes may be coupled to a spray unit, which will be described later.

[0027] The process chamber (100) may include a gate (G) installed on the side wall of the chamber body (110) to form a passage for the substrate (S) to flow in and out.

[0028] Additionally, the process chamber (100) may be connected to a pumping port (P1, P2) and a vacuum pump (not shown) connected to the pumping port (P1, P2) to form a vacuum environment in the processing space. The pumping port (P1, P2) may be formed on one side of the chamber body (110) to form a passage for discharging source gas, reaction gas, and purge gas used in the substrate processing process to the outside of the processing space. The pumping port (P1, P2) may have a structure in which at least one is formed for each process area (A1, A2).

[0029]

[0030] Referring to FIGS. 1 to 3, the gas injection unit (200) can supply a plurality of gases to the substrate (S) and the substrate support (300), respectively.

[0031] Specifically, the gas injection unit (200) may have a structure including a source gas injection unit (210a, 210b), a reaction gas injection unit (210c, 210d), and a separation gas injection unit (230a, 230b, 230c, 230d, 250), respectively.

[0032] The source gas injection unit (210a, 210b) can inject source gas onto a substrate (S) disposed in a first process area (A1). At least one source gas injection unit (210a, 210b) may be formed in the first process area (A1).

[0033] The above reaction gas injection unit (210c, 210d) can inject a reaction gas onto a substrate (S1, S2) placed in a second process area (A2). At least one reaction gas injection unit (210c, 210d) may be formed in the second process area (A2).

[0034] For example, the source gas injection units (210a, 210b) may be installed one by one in each of the two first sub-process areas to inject source gas. The reaction gas injection units (210c, 210d) may be installed one by one in each of the two second sub-process areas to inject reaction gas.

[0035] In addition, the source gas injection units (210a, 210b) can alternately inject one or more types of source gases. Accordingly, the substrate processing device according to the embodiment can form a multilayer stack by alternately depositing thin films of the same composition or heterogeneous thin films of different compositions on the substrates (S1, S2).

[0036] To explain using the first substrate (S1) among the plurality of substrates (S1, S2) above as an example, the source gas injection unit (210a, 210b) can inject a first source gas onto the substrate (S1) placed in the first process area (A1). After adsorbing the first source gas onto the substrate, the substrate (S1) can be transferred and placed in the second process area (A2). In the second process area (A2), the substrate (S1) on which the first source gas has been adsorbed can be reacted with a reaction gas to form a first thin film on the substrate. Subsequently, the substrate (S1) on which the first thin film has been formed can be transferred from the second process area (A2) to the first process area (A1) and placed therein. In addition, the source gas injection unit (210a, 210b) can inject a second source gas onto the substrate (S1) on which the first thin film is formed, and subsequently, the first thin film and the second thin film can be formed on the substrate (S1) by reacting with the reaction gas through the reaction gas injection unit (210c, 210d). That is, the source gas injection unit (210a, 210b) can alternately supply the first source gas and the second source gas. At this time, the first source gas and the second source gas may have different compositions.

[0037] The source gas may include various conventional gases used to form a thin film on substrates (S1, S2). The source gas may each be sprayed with at least one of hafnium (Hf) precursor gas, zirconium (Zr) precursor gas, aluminum (Al) precursor gas, silicon (Si) precursor gas, titanium (Ti) precursor gas, gadolinium (Gd) precursor gas, germanium (Ge) precursor gas, and yttrium (Y) precursor gas. When the source gas is sprayed onto the substrate (S), the source gas may be adsorbed onto the substrate (S).

[0038] The reaction gas injection unit (210c, 210d) can inject a reaction gas onto a substrate (S1, S2) placed in a second process area (A2). When the reaction gas is injected onto the substrate (S1, S2) through the reaction gas injection unit (210c, 210d), the reaction gas reacts with a source adsorbed on the substrate (S1, S2) to form a thin film.

[0039] The above reaction gas can be exemplified by an oxygen-containing gas. The above oxygen-containing gas may include at least one of oxygen (O2) gas, ozone (O3) gas, water vapor (H2O), hydrogen peroxide (H2O2) gas, nitrogen dioxide (NO2) gas, nitrous oxide (N2O) gas, nitric oxide (NO) gas, and carbon dioxide (CO2) gas.

[0040] The source gas injection unit (210a, 210b) and the reaction gas injection unit (210c, 210d) can be configured to each inject the source gas and the reaction gas, respectively, and then inject a purge gas onto the process area (A1, A2) to perform a purge step.

[0041] The above source gas injection units (210a, 210b) and reaction gas injection units (210c, 210d) can each be implemented by introducing shower heads of various conventional shapes used for gas injection in a substrate processing device.

[0042] In the foregoing description, a structure in which a source gas injection unit (210a, 210b) is installed in a first process area and a reaction gas injection unit (210c, 210d) is installed in a second process area was described as an example. However, the structure is not limited thereto, and a structure in which a reaction gas injection unit is installed in the first process area and a source gas injection unit is installed in the second process area may also be provided. Additionally, the substrate processing device according to the embodiment may selectively change the type of gas injected from the source gas injection unit (210c, 210d) and the reaction gas injection unit (10c, 210d) as needed.

[0043]

[0044] The above-mentioned separation gas injection units (230a, 230b, 230c, 230d, 250) can each inject separation gas to spatially separate a process area (A1, A2) and a plurality of sub-process areas formed by dividing the process area (A1, A2).

[0045] To this end, the separation gas injection units (230a, 230b, 230c, 230d, 250) may include first to fourth separation gas injection units (230a, 230b, 230c, 230d) and a central separation gas injection unit (250). The first to fourth separation gas injection units (230a, 230b, 230c, 230d) may be formed on the separation regions (SA1~SA4) of the top lead (130) formed between the first to fourth process gas injection units (210a, 210b, 210c, 210d). The separation regions (SA1~SA4) of the top lead (130) refer to positions corresponding to the separation regions (SA1~SA4) of the substrate support (300).

[0046] In this way, the first to fourth separation gas injection units (230a, 230b, 230c, 230d) can each inject separation gas onto the separation areas (SA1~SA4) of the substrate support (300). Accordingly, the processing space is separated into a plurality of partitioned spaces, and mixing of the source gas and reaction gas within the process areas (A1, A2) is prevented. The plurality of substrates (S1, S2) are transported while passing through the separation areas (SA1~SA4) and are exposed to the separation gas when the process areas (A1, A2) change, and unreacted gas and particles can be removed by the separation gas and temperature deviation can be improved.

[0047] Each of the above-mentioned separation gas injection units (230a, 230b, 230c, 230d, 250) has a gas supply port (SP) formed therein to receive separation gas and inject the separation gas into the processing space.

[0048] Specifically, in the first to fourth separation gas injection units (230a, 230b, 230c, 230d), the first separation gas injection unit (230a) and the third separation gas injection unit (230c) each serve as sub-separation gas injection units (sub-SG1, sub-SG2) that divide the first process area (A1) and the second process area (A2) into two spaces, respectively.

[0049] In the first to fourth separation gas injection units (230a, 230b, 230c, 230d) above, the second separation gas injection unit (230b) and the fourth separation gas injection unit (230d) serve as main separation gas injection units (main-SG1, main-SG2) that divide the first process area (A1) and the second process area (A2) into independent spaces, respectively.

[0050] In the substrate processing apparatus according to the embodiment, the temperature of the separation gas injected from the sub-separation gas injection unit (sub-SG1, sub-SG2) and the main separation gas injection unit (main-SG1, main-SG2) can be controlled differently from one another to improve the yield and quality of the substrate processing process, and this will be explained in more detail below.

[0051] The central separation gas injection unit (250) may be installed in the central region (C) of the top lead (130). The central region of the top lead (130) refers to a position corresponding to the central region (C) of the substrate support (300).

[0052] The central separation gas injection unit (250) above serves to inject central separation gas into the central region (C) of the mounting plate (310) so as to prevent the source gas and reaction gas injected from the first to fourth process gas injection units (210a, 210b, 210c, 210d), respectively, from meeting and mixing with each other.

[0053] The purge gas, central separation gas, and separation gas may each include an inert gas. Representative examples of the inert gas include argon (Ar) gas, nitrogen (N2) gas, and helium (He) gas. The purge gas, central separation gas, and separation gas may use the same gas or different gases.

[0054] In the above gas injection unit (200), the source gas injection unit (210a, 210b) and the reaction gas injection unit (210c, 210d), and the first to fourth separation gas injection units (230a, 230b, 230c, 230d) can each be arranged in a circumferential direction on the top lead (130) and can be spaced apart from each other radially.

[0055] In the above gas injection unit (200), the source gas injection unit (210a, 210b) and the reaction gas injection unit (210c, 210d) and the first to fourth separation gas injection units (230a, 230b, 230c, 230d) can each spatially separate substrates (S) mounted on a rotating substrate support (300) so as to perform adsorption and reaction steps on the first process area (A1) and the second process area (A2), respectively. Additionally, the central separation gas injection unit (250) injects a central separation gas into the central area. Accordingly, the substrate processing device according to the embodiment can form a thin film on a substrate using a space-time division method of atomic layer deposition. Furthermore, a thin film can also be formed on a substrate using a space-time division method of atomic layer deposition.

[0056] Specifically, a substrate processing device according to one embodiment supplies source gas and reaction gas to process areas (A1, A2), respectively, for a certain period of time through source gas injection units (210a, 210b) and reaction gas injection units (210c, 210d), then stops the supply of the source gas and reaction gas, and supplies a purge gas to remove unreacted source gas or reaction gas and reaction by-products to perform a first substrate processing step. Then, the substrate support member (300) is rotated to transfer the substrate to the next process area, and then a second substrate processing step is performed by supplying source gas and reaction gas to the substrate (S), respectively, and supplying a purge gas to remove reaction by-products to deposit a thin film on the substrate (S) by an atomic layer deposition process. At this time, during the process of performing the first substrate processing step, the second substrate processing step, and the substrate transfer step for transferring the substrate, a separation gas and a central separation gas are each injected to separate the space.

[0057]

[0058] Meanwhile, referring to FIGS. 1, 3, and 4, the substrate support member (300) forms a mounting space for mounting the plurality of substrates (S1, S2). The substrate support member (300) is installed in a rotatable structure on the processing space of the chamber body (110). The plurality of substrates (S1, S2) can be mounted radially along the rotational direction on the substrate support member (300). For example, the substrate support member (300) can be installed on the chamber body (110) in a structure capable of rotating in both directions with respect to the central axis of the process chamber (100). To this end, the substrate support member (300) may have a structure including a mounting plate (310), a driving shaft (330), and a heater unit (350).

[0059] The above-mentioned mounting plate (310) has a flat plate-shaped structure on which the plurality of substrates (S1, S2) are mounted on its upper surface. The mounting plate (310) is sealedly coupled from the outside to the inside of the chamber body (110) and can rotate in both directions by receiving rotational power transmitted from the drive shaft (330). The mounting plate (310) may have a plurality of mounting grooves (not shown) formed therein, each capable of mounting a plurality of substrates (S). The mounting grooves may be formed in a number corresponding to the divided spaces of the processing space. Additionally, the mounting grooves may have a shape corresponding to the shape of the substrates (S1, S2).

[0060] One side of the drive shaft (330) is connected to the lower part of the mounting plate (310), and the other side may be connected to a drive motor that provides driving force for moving up and down or rotating in both directions.

[0061] The heater unit (350) is installed at the bottom of the mounting plate (310) and serves to heat a plurality of substrates (S1, S2) mounted on the mounting plate (310). The heater unit (350) can be implemented using a heater of various conventional structures that are installed in a substrate processing device and utilized to heat the substrates.

[0062] For example, the heater unit (350) may include a heater having a two-dimensional spiral structure. The heater unit (350) may include a heater housing that encloses and accommodates the heater. The heater may have a single two-dimensional spiral structure connected to a heater power source, but is not limited thereto. The heater unit (350) may include a plurality of two-dimensional spiral structure heaters grouped in a direction from the central region of the mounting plate (310) toward the edge region with respect to the mounting plate (310). Accordingly, the heater unit (350) can heat the central region and the edge region of the mounting plate (310) to different temperatures.

[0063] However, the heater unit (350) has a structure in which the heater is connected along the circumferential direction of the mounting plate in a two-dimensional spiral structure, so the temperature of the first process area (A1) and the second process area (A2) cannot be controlled separately. Accordingly, the substrate processing device according to the embodiment can improve the yield and quality of the substrate processing process by utilizing the temperature control unit to be described later, and this will be explained in more detail below.

[0064]

[0065] The above temperature control unit controls the temperature of the source gas injection unit (210a, 210b) and the reaction gas injection unit (210c, 210d) and the temperature of the top lid (130), respectively.

[0066] In addition, the temperature control unit can control the temperature of the separation gas injection unit (230a, 230b, 230c, 230d, 250).

[0067] First, the temperature control unit may each include process temperature control units (410a, 410b, 410c).

[0068] Referring to FIG. 5, the process temperature control units (410a, 410b, 410c) each control the temperature of the process gas injection units (210a, 210b, 210c, 210d) and the top lid (130).

[0069] Specifically, the process temperature control unit (410a, 410b, 410c) may include the first to third process temperature control units (410a, 410b, 410c).

[0070] The first process temperature control unit (410a) is connected to the source gas injection unit (210a, 210b) and can control the temperature of the source gas injection unit (210a, 210b). The second process temperature control unit (410b) is connected to the reaction gas injection unit (210c, 210d) and serves to control the temperature of the reaction gas injection unit (210c, 210d). The third process temperature control unit (410c) can perform the role of controlling the temperature of the top lid (130).

[0071] The first to third process temperature control units (410a, 410b, 410c) can each be implemented using a heat exchange means utilized for temperature control, but are not limited thereto, and can also be implemented using a cartridge heater, a heating wire coil, etc.

[0072] For example, the first to third process temperature control units (410a, 410b, 410c) may have a structure including a temperature control means capable of controlling the temperature of a heat exchange fluid, a first inlet / outlet port (P1), and a first heat exchange channel (HEC1).

[0073] The above temperature control means serves to control the temperature of the heat exchange fluid supplied to control the temperature of the source gas injection unit (210a, 210b), reaction gas injection unit (210c, 210d), and top lid (130).

[0074] The first inlet / outlet port (P1) is formed on the source gas injection unit (210a, 210b) and the reaction gas injection unit (210c, 210d) to provide a passage for heat exchange fluid to flow in and out through the first heat exchange channel (HEC1). The first inlet / outlet port (P1) may also be formed on the top lid (130) to provide a passage for heat exchange fluid to flow in and out through the first heat exchange channel (HEC1).

[0075] The first inlet / outlet port (P1) can be connected to the temperature control means and the distribution line, respectively.

[0076] The first heat exchange channel (HEC1) is formed inside the source gas injection unit (210a, 210b), reaction gas injection unit (210c, 210d), and top lid (130), respectively, to form a flow space for the heat exchange fluid to flow through, and the heat exchange fluid comes into contact with the source gas injection unit (210a, 210b), reaction gas injection unit (210c, 210d), and top lid (130), respectively, so that the temperatures of the source gas injection unit (210a, 210b), reaction gas injection unit (210c, 210d), and top lid (130), respectively, can be controlled.

[0077] Accordingly, the temperature of the entire area of ​​the top lead (130) in the above substrate processing device can be controlled by three process temperature control units (410a, 410b, 410c).

[0078] The above process temperature control units (410a, 410b, 410c) are controlled by a control unit (500) to be described later, and can be controlled so that the first process area (A1), the second process area (A2), and the top lead (130) maintain different temperatures from each other.

[0079]

[0080] The above temperature control unit serves to control the temperature of the separated gas injected from the separated gas injection unit (230a, 230b, 230c, 230d, 250). To this end, the above temperature control unit may each include a separated temperature control unit (430a, 430b, 430c) and a central separated temperature control unit (450a, 450b, 450c).

[0081] The above separation temperature control units (430a, 430b, 430c) serve to control the temperature of the separation gas injected from the first to fourth separation gas injection units (230a, 230b, 230c, 230d). The above central separation temperature control units (450a, 450b, 450c) serve to control the temperature of the separation gas injected from the central separation gas injection unit (250).

[0082] Specifically, the separation temperature control unit (430a, 430b, 430c) can control the temperatures of the plurality of separation gas injection units (230a, 230b, 230c, 230d) differently for each separation area. The separation temperature control unit (430a, 430b, 430c) causes the temperatures of the separation gas injection units (230a, 230b, 230c, 230d) to be different for each area, and thereby causes separation gas with different temperatures to be injected for each separation area, thereby buffering the temperature difference between process areas (A1, A2) and improving the yield and quality of the substrate processing process.

[0083] The above separation temperature control units (430a, 430b, 430c) can each be implemented using one of a cartridge heater, a heat exchange unit, and a gas heating unit. The above separation temperature control units (430a, 430b, 430c) may use the same means or different temperature control means.

[0084] In addition, the central separation temperature control unit (450a, 450b, 450c) can adjust the temperature of the central separation gas injected from the central separation gas injection unit (250) to be different from the temperature of the separation gas.

[0085] The above central separation temperature control units (450a, 450b, 450c) can also be implemented using any one of a cartridge heater, a heat exchange unit, and a gas heating unit, respectively.

[0086] Referring again to FIG. 3, the substrate processing device according to Example 1 may include a first separation temperature control unit (430a) and a first central separation temperature control unit (450a). At this time, the first separation temperature control unit (430a) and the first central separation temperature control unit (450a) may each be implemented by introducing a cartridge heater.

[0087] Specifically, the first separation temperature control unit (430a) can be inserted and installed in each of the plurality of separation gas injection units (230a, 230b, 230c, 230d), and at least one can be installed for each separation gas injection unit (230a, 230b, 230c, 230d).

[0088] The first central separation temperature control unit (450a) can be installed in each of the central separation gas injection units (250), and multiple units may be provided.

[0089] The first separation temperature control unit (430a) and the first central separation temperature control unit (450a) are separately connected to a power source and can heat the separation gas injection units (230a, 230b, 230c, 230d) and the central separation gas injection unit (250), respectively. The first separation temperature control unit (430a) and the first central separation temperature control unit (450a) can heat the plurality of separation gas injection units (230a, 230b, 230c, 230d) and the central separation gas injection unit (250) to different temperatures, respectively. Accordingly, the temperatures of the separation gas injection units (230a, 230b, 230c, 230d) and the central separation gas injection unit (250) can be controlled to be different from each other. As a result, separation gas at different temperatures can be injected for each separation area.

[0090] The heating temperature of the first separation temperature control unit (430a) and the first central separation temperature control unit (450a) can each be controlled by a control unit (500) to be described later. The control unit (500) enables the heating temperature of the first separation temperature control unit (430a) and the first central separation temperature control unit (450a) to be controlled, respectively. The cartridge heater can control the temperature of the separation gas injection unit (230a, 230b, 230c, 230d) and the central separation gas injection unit (250) regardless of the external shape, and can heat not only the surface but also the interior. The above cartridge heater can heat the separation gas injection units (230a, 230b, 230c, 230d) and the central separation gas injection unit (250) in a short time, and can respond quickly to temperature changes compared to methods such as heat jackets, and can be easily applied to narrow areas with a small installation area, and has the advantage of relatively easy installation costs and maintenance.

[0091]

[0092] According to one embodiment, the second separation temperature control unit (430b) and the second central separation temperature control unit (450b) can be implemented using a heat exchange means.

[0093] FIG. 6 is a cross-sectional view showing a substrate processing apparatus equipped with a heat exchange unit of Example 2, cut along the centerline (C-C') in FIG. 2.

[0094] Referring to FIG. 6, the substrate processing device according to Example 2 may include a heat exchange unit. To this end, the second separation temperature control unit (430b) and the second central separation temperature control unit (450b) may each have a structure including a temperature control means, a third inlet / outlet port (P3), and a third heat exchange channel (HEC3).

[0095] The above temperature control means serves to control the temperature of the heat exchange fluid. The third inlet / outlet port (P3) is formed on each of the separation gas injection units (230a, 230b, 230c, 230d, 250) and provides a passage so that the heat exchange fluid can flow in and out through the heat exchange channel (HEC3) to be described later. The third inlet / outlet port (P3) can be connected to the temperature control means through a distribution line. The third heat exchange channel (HEC3) is formed inside each of the first to fourth separation gas injection units (230a, 230b, 230c, 230d) to form a flow space for the heat exchange fluid to flow through, and the heat exchange fluid comes into contact with the second separation gas injection unit (230a, 230b, 230c, 230d) and the central separation gas injection unit (250), respectively, to control the temperature of the separation gas and the central separation gas.

[0096] According to one embodiment, the third separation temperature control unit (430c) and the third central separation temperature control unit (450c) can each be implemented using a gas heating unit.

[0097] FIG. 7 is a cross-sectional view showing a substrate processing apparatus equipped with a gas heating unit of Example 3, cut along the center line (C-C') in FIG. 2.

[0098] Referring to FIG. 7, the third separation temperature control unit (430c) and the third central separation temperature control unit (450c) are each installed on a supply pipe for supplying the separation gas to the plurality of separation gas injection units (230a, 230b, 230c, 230d) respectively, and can heat the separation gas supplied through the supply pipe. The gas heating unit can be implemented using various conventional forms of gas heating means that are installed on the supply pipe for supplying gas and utilized to selectively control the temperature of the supplied gas. The gas heating unit may have various conventional shapes used to heat gas, such as a heating coil, a heating vessel, etc.

[0099] The third separation temperature control unit (430c) may be installed on each of a plurality of supply pipes connected to each of the separation gas injection units (230a, 230b, 230c, 230d). Additionally, the third central separation temperature control unit (450c) may be installed on a supply pipe connected to the central separation gas injection unit (250). The plurality of supply pipes may each have a structure in which a mass flow controller (MFC) is formed to individually control the supply amount of the separation gas and the central separation gas, respectively, under the control of the control unit (500).

[0100]

[0101] The above temperature control unit may include a temperature measuring unit (470). The temperature measuring unit (470) is installed in each of the separation gas injection units (230a, 230b, 230c, 230d, 250) to measure the temperature of each of the separation gas injection units (230a, 230b, 230c, 230d) and the central separation gas injection unit (250), and can transmit the measurement results to the control unit (500).

[0102] The control unit (500) receives the temperature measurement result measured by the temperature measurement unit (470) and can control the operation of the first to third separation temperature control units (430a, 430b, 430c) and the first to third central separation temperature control units (450a, 450b, 450c) to maintain a temperature suitable for the substrate processing process.

[0103] Additionally, the substrate processing device according to the embodiment may include a gas supply unit (not shown). The gas supply unit may supply gas to the process gas injection unit (210), the separation gas injection unit (230), and the central separation gas injection unit (250), respectively. The gas supply unit may be connected to the process gas injection unit (210), the separation gas injection unit (230), and the central separation gas injection unit (250), respectively, through a gas supply pipe.

[0104]

[0105] The above control unit (500) controls the operation of the gas injection unit (200), the substrate support unit (300), and the temperature control unit.

[0106] The control unit (500) can control the operation of the temperature control unit to control the temperature of the plurality of separation gas injection units (230a, 230b, 230c, 230d) differently for each of the separation areas (SA1, SA2, SA3, SA4). In addition, the control unit (500) can control the temperature of the central separation gas injection unit (250) differently from the plurality of separation gas injection units (230a, 230b, 230c, 230d).

[0107] Referring again to FIG. 2, the control unit (500) can receive temperature measurement results of the separation gas injection units (230a, 230b, 230c, 230d) and the central separation gas injection unit (250) from the temperature measurement unit (470). The control unit (500) receives the temperature measurement results transmitted from the temperature measurement unit (470) and controls the operation of the first to third separation temperature control units (430a, 430b, 430c) and the first to third central separation temperature control units (450a, 450b, 450c), respectively, so that the temperatures of the separation gas injection units (230a, 230b, 230c, 230d) and the central separation gas injection unit (250) can be controlled differently.

[0108] For example, the control unit (500) can check the temperature of the plurality of separation gas injection units (230a, 230b, 230c, 230d, 250) through the temperature measuring unit (470) until the temperature of each of the plurality of separation gas injection units (230a, 230b, 230c, 230d, 250) reaches a preset temperature, and control the operation of the cartridge heater to maintain the temperature of the plurality of separation gas injection units (230a, 230b, 230c, 230d, 250) at a preset temperature by controlling the applied power. That is, the control unit (500) can check the temperature of the plurality of separating gas injection units (230a, 230b, 230c, 230d, 250) through the temperature measuring unit (470), and can directly control the temperature of the plurality of separating gas injection units (230a, 230b, 230c, 230d, 250) using a cartridge heater.

[0109] As another example, the control unit (500) receives a temperature measurement result in which the temperature of the heat exchange fluid supplied to the plurality of separation gas injection units is measured through the temperature measurement unit (470). Then, the control unit (500) can control the operation of the heat exchange units so that the temperature of the plurality of separation gas injection units (230a, 230b, 230c, 230d, 250) maintains a preset temperature.

[0110] That is, the control unit (500) can check the temperature of the heat exchange fluid supplied to the plurality of separation gas injection units (230a, 230b, 230c, 230d, 250) through the temperature measuring unit (470) and control the temperature of the plurality of separation gas injection units (230a, 230b, 230c, 230d, 250) indirectly using the heat exchange unit.

[0111] In addition, the control unit (500) may receive the temperature measurement results of the separation gas injection units (230a, 230b, 230c, 230d, 250) through the temperature measurement unit (470) and control the operation of the gas heating unit so that the temperature of the separation gas injection units (230a, 230b, 230c, 230d, 250) maintains a preset temperature.

[0112] That is, the control unit (500) can check the temperature of the separation gas supplied to each of the plurality of separation gas injection units (230a, 230b, 230c, 230d, 250) through the temperature measuring unit (470) and control the temperature of the plurality of separation gas injection units (230a, 230b, 230c, 230d, 250) indirectly using a gas heating unit.

[0113] In addition, the control unit (500) can control the operation of the first to third process temperature control units (410a, 410b, 410c) of the temperature control unit so that the temperatures of the process gas injection unit (210a, 210b, 210c, 210d) and the top lead (130) can also be controlled differently from each other.

[0114] The substrate processing device according to the embodiment can have its temperature controlled in the following way.

[0115] FIG. 8 is a process diagram showing a substrate processing method performed using a substrate processing device according to an embodiment.

[0116] Referring to FIG. 8, a substrate processing device according to one embodiment can perform a substrate processing process in the following order.

[0117] First, the first substrate and the second substrate are placed on the substrate support (200) so that the first substrate and the second substrate are positioned in the first process area (A1) and the second process area (A2), respectively (step S100).

[0118] Next, a source gas is injected into the first process area (A1) to adsorb the source gas onto the first substrate, and at the same time, a reaction gas is injected into the second process area (A2). Then, the supply of the source gas and the reaction gas is stopped, and a purge gas is injected into the first process area (A1) and the second process area (A2) to perform a purge treatment (step S200).

[0119] Next, the substrate support (200) is rotated 180° so that the first substrate and the second substrate are positioned in the second process area (A2) and the first process area (A1), respectively, thereby transferring the first substrate and the second substrate (step S300).

[0120] Then, a source gas is injected into the first process area (A1) to adsorb the source gas onto the second substrate, and at the same time, a reaction gas is injected into the second process area (A2) to react the source gas adsorbed on the first substrate with the reaction gas. Then, the supply of the source gas and the reaction gas is stopped, and a purge gas is injected into the first process area (A1) and the second process area (A2) to perform a purge treatment (step S400).

[0121] In addition, in the substrate processing apparatus according to the embodiment, an atomic layer deposition process including a unit cycle of source gas adsorption, reaction gas reaction, and substrate transfer steps as described above is performed n times to deposit a thin film on the substrate. At this time, n may mean a natural number greater than or equal to 1.

[0122] During the process of performing the substrate processing process as described above, the source gas injected in the first process area (A1) of the substrate processing device according to the embodiment has its temperature controlled by the first process temperature control unit (410a), and the reaction gas injected in the second process area (A2) has its temperature controlled by the second process temperature control unit (410b). Also, the top lead (130) has its temperature controlled by the third process temperature control unit (410c). The first to third process temperature control units (410a, 410b, 410c) can be controlled to maintain different temperatures from each other.

[0123] And, in the substrate processing device according to the embodiment, the heater unit (350) heats the substrates located in the first process area (A1) and the second process area (A2) to a single temperature.

[0124] In this state, the temperatures of the first and second process regions (A1, A2) may differ by the temperature difference of the first and second process temperature control units (410a, 410b).

[0125] For example, the control unit (500) can control the first process temperature control unit (410a) to adjust the temperature (T2) of the source gas injection unit (210a, 210b) placed in the first process area (A1) to 140 ℃. The control unit (500) can control the second process temperature control unit (410b) to adjust the temperature (T3) of the reaction gas injection unit (210c, 210d) placed in the second process area (A2) to 180 ℃. The control unit (500) can control the third process temperature control unit (410c) to adjust the temperature of the top lid (130) to 160 ℃.

[0126] As described above, when the process temperature of the heater unit (350) is set to 320 ℃ while the first to third process temperature control units (410a, 410b, 410c) are controlled by the control unit (500) to have different temperatures, the temperature of the first process area (A1) can be controlled to a temperature between 140 ℃ and 320 ℃, and the temperature of the second process area (A2) can be controlled to a temperature between 180 ℃ and 320 ℃. In particular, the temperature difference between the first process area (A1) and the second process area (A2) can be 10 to 40 ℃.

[0127] If the temperature difference between the first process area (A1) and the second process area (A1) is large, such as 10 ℃, the yield of the substrate processing process may decrease and the quality may deteriorate.

[0128] The substrate processing device according to the embodiment can improve problems caused by temperature deviations between process areas by controlling the temperatures of the first to fourth separation gas injection units (230a, 230b, 230c, 230d) and the central separation gas injection unit (250), respectively.

[0129] Referring again to FIG. 2, in the first to fourth separation gas injection units (230a, 230b, 230c, 230d), the first separation gas injection unit (230a) and the third separation gas injection unit (230c) each function as sub-separation gas injection units (sub-SG1, sub-SG2) that divide the first process area (A1) and the second process area (A2) into two spaces. The second separation gas injection unit (230b) and the fourth separation gas injection unit (230d) each function as main separation gas injection units (main-SG1, main-SG2) that divide the first process area (A1) and the second process area (A2) into independent spaces.

[0130] The above control unit (500) can control the operation of the temperature control unit so that the temperature (T1) of the separation gas injected from the second separation gas injection unit (230b) and the fourth separation gas injection unit (230d), which are the main separation gas injection units (main-SG1, main-SG2), is a temperature between the temperature (T2) of the first process temperature control unit (410a) and the temperature (T3) of the second process temperature control unit (410b).

[0131] Additionally, the control unit (500) can control the operation of the separation temperature control units (430a, 430b, 430c) so that the temperature (T4) of the first separation gas injection unit (230a), which is the sub-separation gas injection unit (sub-SG1, sub-SG2), is the same as or similar to the temperature of the first process temperature control unit (410a). The control unit can also control the operation of the separation temperature control units (430a, 430b, 430c) so that the temperature (T5) of the third separation gas injection unit (230c), which is the sub-separation gas injection unit (sub-SG1, sub-SG2), is the same as or similar to the temperature of the second process temperature control unit (410b). The above similar temperature may mean a temperature with a temperature deviation of ± 0.1 to 5 ℃ relative to the temperature of the first and second process temperature control units (410a, 410b).

[0132] And, the control unit (500) can control the operation of the central separation temperature control units (450a, 450b, 450c) so that the temperature of the central separation gas injection unit (250) is equal to or lower than the temperature of the third process temperature control unit (410c).

[0133]

[0134] In the substrate processing apparatus according to the embodiment described above, the temperature can be controlled differently for each separation area (SA1 to SA4), and in particular, the temperature of the main separation gas injection unit (230b, 230d) that separates the process area can be controlled to improve the yield of the substrate processing process and improve quality by preventing rapid temperature changes. That is, the substrate processing apparatus according to the embodiment can buffer the processing temperature by preheating or precooling the substrate to a temperature between the substrate processing temperature of the previous process area and the next process area.

[0135] [Explanation of the symbol]

[0136] 100: Process chamber

[0137] 110: Chamber body

[0138] 130: Top Lead

[0139] 200: Gas injection unit

[0140] 210a, 210b, 210c, 210d: Process gas injection unit

[0141] 230a, 230b, 230c, 230d: 1st to 4th separating gas injection units

[0142] 250: Central separator gas injection unit

[0143] 300: Substrate support

[0144] 310: Seating plate

[0145] 330: Drive shaft

[0146] 350: Heater unit

[0147] 410a, 410b, 410c: 1st to 3rd process temperature control units

[0148] 430a, 430b, 430c: Separate temperature control unit

[0149] 450a, 450b, 450c: Central temperature control unit

[0150] 470: Temperature measuring unit

[0151] 500: Control unit

[0152] A1, A2: 1st and 2nd process areas

[0153] C: Central area

[0154] IP1, IP3: Inflow / Outflow Ports

[0155] HEC1, HEC3: Heat exchange channels

[0156] S1, S2: Substrate

[0157] SP: Gas supply port

[0158] SA1~SA4: 1st to 4th separation regions

[0159] G: Gate

Claims

1. A process chamber comprising a chamber body providing a processing space including first and second process areas for depositing thin films on each of a plurality of substrates, and a top lid covering the upper open surface of the chamber body; a gas injection unit installed on the top lid and comprising a plurality of source gas injection units and a plurality of reaction gas injection units for injecting source gas and reaction gas, respectively, into the first and second process areas, and a plurality of separation gas injection units disposed between the plurality of source gas injection units and the plurality of reaction gas injection units for injecting separation gas to spatially separate the processing space; a substrate support unit installed opposite to the gas injection unit, having the plurality of substrates placed on its upper surface, and rotatably installed in the process chamber; and a temperature control unit comprising a first process temperature control unit for controlling the temperature of the plurality of source gas injection units, a second process temperature control unit for controlling the temperature of the plurality of reaction gas injection units, and a separation temperature control unit for controlling the temperature of the plurality of separation gas injection units. and includes a control unit that controls the operation of the gas injection unit, substrate support unit, and temperature control unit, The above control unit is, A substrate processing apparatus that controls the operation of a separation temperature control unit so that the temperature (T1) of a separation gas injection unit, which injects a separation gas to separate the first process area and the second process area, becomes a temperature between the temperature (T2) of the source gas injection unit and the temperature (T3) of the reaction gas injection unit.

2. In Paragraph 1, The above-mentioned first process area includes a plurality of first sub-process areas, and The above-mentioned second process area includes a plurality of second sub-process areas, and The above gas injection unit is, A plurality of source gas injection units formed in a number corresponding to the plurality of first sub-process areas to inject the source gas into each of the plurality of first sub-process areas, and A substrate processing apparatus comprising a plurality of reaction gas injection units formed in a number corresponding to the plurality of second sub-process areas to inject the reaction gas into each of the plurality of second sub-process areas.

3. In Paragraph 2, The above plurality of separation gas injection units are, Two main separation gas injection units for separating the first process area and the second process area, At least one first sub-separation gas injection unit disposed between the plurality of source gas injection units above, At least one second sub-separation gas injection unit disposed between the plurality of reaction gas injection units and A substrate processing apparatus comprising a central separation gas injection unit disposed at the portion where the main separation gas injection unit, the first sub-separation gas injection unit, and the second sub-separation gas injection unit extend and intersect.

4. In Paragraph 3, The above control unit is, A substrate processing apparatus characterized by controlling the operation of the separation temperature control unit so that the temperature (T4) of the first sub-separation gas injection unit is the same as the temperature (T2) of the source gas injection unit or has a temperature deviation of ± 0.1 to 5 ℃.

5. In Paragraph 3, The above control unit is, A substrate processing apparatus characterized by controlling the operation of the separation temperature control unit so that the temperature (T5) of the second sub-separation gas injection unit is the same as the temperature (T3) of the reaction gas injection unit, or has a temperature deviation of ± 0.1 to 5 ℃.

6. In Paragraph 3, The above control unit is, A substrate processing apparatus characterized by controlling the operation of the separation temperature control unit so that the temperature (T6) of the central separation gas injection unit is lower than the temperature (T1) of the main separation gas injection unit and the temperatures (T4, T5) of the first and second sub-separation gas injection units.

7. In Paragraph 1, The above temperature control unit is, A substrate processing device comprising a third process temperature control unit for controlling the temperature of the top lead.

8. In Paragraph 1, The above substrate support is, A substrate processing device further comprising a heater unit formed at the lower part of the mounting plate of the substrate support portion and heating the plurality of substrates.

9. In Paragraph 1, The above temperature control unit is, A substrate processing device comprising a temperature measuring unit that measures the temperature of each of the plurality of separation gas injection units.

10. In Paragraph 9, The above-mentioned separate temperature control unit is, It includes a cartridge heater installed in each of the plurality of separation gas injection units to heat each of the plurality of separation gas injection units, and The above control unit is, A substrate processing device that checks the temperature of the plurality of separation gas injection units through the temperature measuring unit until the temperature of each of the plurality of separation gas injection units reaches a preset temperature, and controls the operation of the cartridge heater to maintain the temperature of the plurality of separation gas injection units at the preset temperature by controlling the applied power.

11. In Paragraph 1, The above-mentioned separate temperature control unit is, A substrate processing apparatus comprising a heat exchange unit that supplies a heat exchange fluid to a plurality of separation gas injection units and controls the temperature of the heat exchange fluid to control the plurality of separation gas injection units to different temperatures.

12. In Paragraph 11, The above temperature control unit is, It includes a temperature measuring unit for measuring the temperature of a heat exchange fluid supplied to the plurality of separation gas injection units, and The above control unit is, A substrate processing device that receives the temperature measurement result of the heat exchange fluid supplied to the plurality of separation gas injection units through the temperature measuring unit and controls the operation of the heat exchange unit so that the temperature of the plurality of separation gas injection units maintains a preset temperature.

13. In Paragraph 1, The above-mentioned separate temperature control unit is, A substrate processing apparatus comprising a gas heating unit installed on a supply pipe that supplies separation gas to each of the plurality of separation gas injection units and heating the separation gas supplied to each of the plurality of separation gas injection units.

14. In Paragraph 13, The above temperature control unit is, Each of the above plurality of separation gas injection units includes a temperature measuring unit for measuring temperature, and The above control unit is, A substrate processing device that receives a temperature measurement result of the separation gas injection unit through the temperature measurement unit and controls the operation of the gas heating unit so that the temperature of the separation gas injection unit maintains a preset temperature.

15. In Paragraph 1, The above control unit is, With the first and second substrates positioned in the first and second process areas, respectively, the operation of the gas injection unit is controlled to inject the source gas onto the first substrate and inject the reaction gas onto the second substrate for a preset time. The first and second substrates located in the first and second process areas are respectively transferred, and the operation of the substrate support is controlled so that the second substrate is located in the first process area and the first substrate is located in the second process area. The operation of the gas injection unit is controlled to inject the source gas onto the second substrate located in the first process area and to inject the reaction gas onto the first substrate located in the second process area for a preset time. A substrate processing apparatus characterized by controlling the first substrate and the second substrate to alternately move in the first process area and the second process area, respectively, to deposit a thin film on the first substrate and the second substrate.

16. In Paragraph 15, The above control unit is, A substrate processing apparatus that controls the operation of a gas injection unit to inject a source gas and a reaction gas, respectively, onto a first and second substrate located in the first and second process areas, respectively, and then inject a purge gas onto the first and second substrates after the injection of the source gas and the reaction gas is terminated.

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