Nanostructure-based pressure sensor and method for manufacturing same

Abstract

A nanostructure-based pressure sensor and a method for manufacturing same, according to one embodiment of the present disclosure, are provided. In particular, the nanostructure-based pressure sensor comprises: a substrate; and a sensing unit formed on the substrate and having nanostructures arranged thereon, wherein the sensing unit may include: an insulating layer; a sensing layer formed on the insulating layer and deformed as external pressure is applied; and a doped layer formed by doping an upper portion of the sensing layer with a specific impurity.

Description

Nanostructure-based pressure sensor and method for manufacturing the same

[0001] The present disclosure relates to a nanostructure-based pressure sensor and a method for manufacturing the same.

[0002] Pressure sensors are devices that detect changes in externally applied pressure and convert them into electrical signals, and they are utilized in various fields such as industry, medicine, automotive, and aerospace. Depending on the conversion method, these pressure sensors are classified into several types, including piezoresistive, capacitive, piezoelectric, and optical types.

[0003] The most common semiconductor-based pressure sensors form a pressure-sensing diaphragm using microfabrication technology after a silicon oxide (SiO₂) layer is formed on a silicon (Si) substrate. When this diaphragm is deformed by external pressure, the internal resistance, capacitance, or piezoelectric effect of the sensor changes, thereby detecting pressure.

[0004] These pressure sensors are utilized in various fields, such as the automotive and medical industries, and research to improve their performance is also actively underway.

[0005] The background art is provided to facilitate understanding of the present disclosure. It should not be understood as an acknowledgment that the matters described in the background art exist as prior art.

[0006] Conventional pressure sensors have the following limitations.

[0007] First, it is difficult to improve sensitivity due to the limited sensing area. Silicon-based pressure sensors generally have a planar structure, so there are limitations to increasing sensitivity while reducing the size of the sensor. If the size of the sensor is increased to expand the sensing area, problems such as reduced resolution and increased semiconductor manufacturing costs may occur.

[0008] Second, a decrease in sensitivity may occur at low pressures. While conventional pressure sensors can perform precise measurements in a relatively high pressure range, there is a problem in that it is difficult to secure sensitivity in a low pressure range because the deformation of the diaphragm is minute.

[0009] Third, miniaturization and integration are not easy. While advancements in semiconductor process technology have made it possible to fabricate small sensors, existing silicon-based pressure sensors may experience a decrease in sensitivity when their size is reduced. Additionally, even when implementing a multi-sensor array, interference between individual sensors can occur, making integration difficult.

[0010] We have invented a pressure sensor with improved sensitivity compared to existing pressure sensors, and a method for manufacturing said pressure sensor.

[0011] Accordingly, the problem to be solved by the present disclosure is to provide a nanostructure-based pressure sensor and a method for manufacturing the same, which can detect changes in pressure more quickly and accurately by expanding the sensing surface three-dimensionally based on the nanostructure to increase the detectable area within the same area.

[0012] The problems that this disclosure aims to solve are not limited to those mentioned above, and other unmentioned problems will be clearly understood by a person skilled in the art from the description below.

[0013] To solve the problem described above, a nanostructure-based pressure sensor according to an example of the present disclosure is provided. The nanostructure-based pressure sensor comprises: a substrate; a sensing portion formed on the substrate and having nanostructures arranged therein, wherein the sensing portion may include: an insulating layer; a sensing layer formed on the insulating layer and deformed when external pressure is applied; and a doping layer formed by doping a specific impurity on the upper portion of the sensing layer.

[0014] According to the features of the present disclosure, the sensor may further include a protective layer that protects the sensor.

[0015] According to the features of the present disclosure, the nanostructure may be formed to protrude along the surface of the sensing layer.

[0016] According to the features of the present disclosure, the nanostructure may be formed in the form of a nanowire or a nanopillar.

[0017] According to the features of the present disclosure, the nanowires are formed in a continuous pattern on the sensing layer, and the nanopillars can be arranged independently at regular intervals on the sensing layer.

[0018] According to the features of the present disclosure, the nanofilament has a diameter of 50 nm to 1000 nm and a height of 0.1 μm to 2 μm, and the spacing may be 0.2 μm to 2 μm.

[0019] According to the features of the present disclosure, an electrode portion may be further formed between the substrate and the sensing portion, or on the upper part of the sensing portion.

[0020] According to the features of the present disclosure, the specific impurity is doped through an ion implantation or thermal diffusion process and may include at least one of boron, boron, phosphorus, arsenic, or antimony.

[0021] According to the features of the present disclosure, the insulating layer may be formed based on at least one material selected from silicon oxide (SiO2), silicon nitride (Si3N4), aluminum oxide (Al2O3), titanium oxide (TiO2), magnesium oxide (MgO), germanium oxide (GeO2), or polyimide.

[0022] To solve the problem described above, a method for manufacturing a nanostructure-based pressure sensor according to an example of the present disclosure is provided. The method for manufacturing a nanostructure-based pressure sensor comprises the steps of: forming a sensing portion including a nanostructure on a provided substrate; and forming an electrode portion between the substrate and the sensing portion or on top of the sensing portion. The step of forming the sensing portion may include: forming an insulating layer; forming a curved sensing layer by stacking it on the insulating layer; and doping a specific impurity on the sensing layer.

[0023] Specific details of other embodiments are included in the detailed description and drawings.

[0024] According to one example of the present disclosure, by extending the sensing surface three-dimensionally based on a nanostructure to increase the detectable area within the same area, it is possible to detect changes in pressure more quickly and accurately.

[0025] The effects of the present disclosure are not limited to those mentioned above, and other unmentioned effects will be clearly understood by a person skilled in the art from the description below.

[0026] FIG. 1 is a schematic diagram showing a nanostructure-based pressure sensor according to one embodiment of the present disclosure.

[0027] FIG. 2 is a diagram schematically showing the structure of a nanostructure based on a cross-section of a nanostructure-based pressure sensor according to one embodiment of the present disclosure.

[0028] FIGS. 3 to 5 are perspective views of various examples of the configuration of a nanostructure formed in a nanostructure-based pressure sensor according to one embodiment of the present disclosure.

[0029] FIG. 6 is a flowchart schematically illustrating a method for manufacturing a nanostructure-based pressure sensor according to one embodiment of the present disclosure.

[0030] The advantages and features of the present disclosure and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present disclosure is not limited to the embodiments disclosed below but may be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure is complete and to fully inform those skilled in the art of the scope of the invention, and the present disclosure is defined only by the scope of the claims. In connection with the description of the drawings, similar reference numerals may be used for similar components.

[0031] In this document, expressions such as "have," "can have," "include," or "can include" refer to the existence of the relevant feature (e.g., numerical values, functions, actions, or components, etc.) and do not exclude the existence of additional features.

[0032] In this document, expressions such as “A or B,” “at least one of A or / and B,” or “one or more of A or / and B” may include all possible combinations of items listed together. For example, “A or B,” “at least one of A and B,” or “at least one of A or B” may refer to cases including (1) at least one A, (2) at least one B, or (3) both at least one A and at least one B.

[0033] Expressions such as "first," "second," "first," or "second" used in this document may modify various components regardless of order and / or importance, and are used merely to distinguish one component from another without limiting such components. For example, the first user device and the second user device may represent different user devices regardless of order or importance. For example, without departing from the scope of rights set forth in this document, the first component may be named the second component, and similarly, the second component may be renamed the first component.

[0034] Where it is stated that a certain component (e.g., a first component) is "(operatively or communicatively) coupled with" or "connected to" another component (e.g., a second component), it should be understood that the said certain component may be directly connected to the said other component or connected through another component (e.g., a third component). On the other hand, where it is stated that a certain component (e.g., a first component) is "directly connected" or "directly connected" to another component (e.g., a second component), it may be understood that no other component (e.g., a third component) exists between the said certain component and the said other component.

[0035] As used in this document, the expression “configured to” may be replaced, depending on the context, with, for example, “suitable for,” “having the capacity to,” “designed to,” “adapted to,” “made to,” or “capable of.” The term “configured to” does not necessarily mean “specifically designed to” in hardware. Instead, in some situations, the expression “device configured to” may mean that the device is “capable of” in conjunction with other devices or components. For example, the phrase “processor configured to perform A, B, and C” may mean a dedicated processor for performing those operations (e.g., an embedded processor) or a generic-purpose processor (e.g., a CPU or application processor) capable of performing those operations by executing one or more software programs stored in a memory device.

[0036] The terms used in this document are used merely to describe specific embodiments and are not intended to limit the scope of other embodiments. Singular expressions may include plural expressions unless the context clearly indicates otherwise. Terms used herein, including technical or scientific terms, may have the same meaning as generally understood by those skilled in the art described in this document. Terms used in this document that are defined in general dictionaries may be interpreted as having the same or similar meaning as they have in the context of the relevant technology, and are not to be interpreted in an ideal or overly formal sense unless explicitly defined in this document. In some cases, even terms defined in this document may not be interpreted to exclude the embodiments of this document.

[0037] The features of each of the various embodiments of the present disclosure may be combined or combined with one another, either partially or wholly, and as will be fully understood by those skilled in the art, various technical interlocking and operation are possible, and each embodiment may be implemented independently of one another or together in an interlocking relationship.

[0038] For clarity in the interpretation of this specification, the terms used in this specification are defined below.

[0039] As used in this specification, the term "substrate" may refer to a plate on which an electrode or sensing part for detecting pressure is formed. The substrate disclosed in this specification may be a flexible substrate, or a fixed or rigid substrate. That is, a substrate of a more suitable form may be applied depending on the environment in which the temperature is to be measured.

[0040] At this time, the substrate may be formed from any one of glass, ceramic, polyimide, stainless steel, or synthetic polymer. Among these, the synthetic polymer may include, for example, at least one of polyethyleneterephthalate (PET), poly(methyl methacrylate) (PMMA), polyimide (PI), polystyrene (PS), polyethylenenaphthalate (PEN), or polycarbonate (PC).

[0041] However, the material of the substrate is not limited to this, and can be made of various other materials in addition to the synthetic polymers listed above.

[0042] As used in this specification, the term "electrode" means a conductive electrode having electrical conductivity.

[0043] At this time, the electrode disclosed in the present specification may mean an electrode pattern in which a conductive material is printed on a substrate in various ways.

[0044] For example, the electrode may be a conductive electrode formed by printing at least one organic material selected from carbon black, carbon graphite, graphene, fullerene, and carbides onto a substrate. Additionally, the electrode may be a conductive electrode formed by printing at least one metal selected from Au, Ni, Cu, Zn, Fe, Al, Ti, Pt, Hg, Ag, Pb, and alloys thereof onto a substrate.

[0045] As used in this specification, the term "nano-pillar" may be a polymer of nano-sized structure formed on a substrate. In this case, "nano-pillar" may be interpreted as having the same meaning as "nano-pillar array" or "pillar-shaped polymer structure" within this specification.

[0046] According to the features of the present disclosure, the nano-pillar may be composed of a blend (PUNO) of PU and a NOA-based adhesive such as trade name NOA 68. In this case, the content of each of PU and NOA-based adhesive in the blend may be 20 to 80 weight %, preferably 30 to 70 weight %, and more preferably 40 to 60 weight %.

[0047] However, nanofilaments are not limited to this and can be made of a wider variety of polymers as long as they are flexible.

[0048] Hereinafter, the present disclosure will be described in detail by explaining preferred embodiments of the present disclosure with reference to the attached drawings.

[0049] FIG. 1 is a diagram schematically showing the structure of a nanostructure based on a cross-section of a nanostructure-based pressure sensor according to one embodiment of the present disclosure. Hereinafter, the structure of FIG. 1 will be described in more detail with reference to FIG. 2.

[0050] Referring to FIG. 1, a pressure sensor (100) according to one embodiment of the present disclosure may be configured to include a substrate (110) and a sensing unit (120).

[0051] First, the substrate (110) performs the function of reinforcing the durability of the pressure sensor (100) and can be formed in a plate shape. At this time, the substrate (110) can be composed of, for example, a silicon wafer.

[0052] This sensing part (120) can be formed on the substrate (110) with a certain pattern (e.g., a zigzag pattern, a wave pattern, etc.). This allows the gauge factor to increase as the surface area for receiving pressure increases. In other words, through this configuration, the pressure sensing sensitivity is improved as the resistance change increases even with small deformations, thereby increasing sensitivity.

[0053] At this time, the sensing part (120) may be composed of an insulating layer (1211), a sensing layer (1212), and a doping layer (1213). As a nanostructure (121) is arranged and formed on the sensing part (120), the surface area is further increased, thereby further improving the pressure sensing sensitivity.

[0054] If this nanostructure (121) is arranged in a straight line, there is a possibility that pressure changes may be concentrated in a specific area, but if it is formed in a zigzag pattern or a wave pattern, the pressure is evenly distributed throughout the sensing part (120) and the response of the entire pressure sensor (100) can be maintained constant, and the electrical path within the same area is lengthened, which can be advantageous for adjusting the resistance value. In addition, this shape provides greater flexibility regarding physical deformation (e.g., expansion, contraction, etc.), thereby increasing the durability of the pressure sensor (100).

[0055] Meanwhile, the nanostructure (121) can be formed in the form of a nanowire or a nanopillar.

[0056] For example, in the case of a nanowire form, nanowires can be formed in a continuous pattern on the sensing layer (1212), and in the case of a nanopillar form, they can be formed by being independently spaced apart at regular intervals on the sensing layer (1212). However, for convenience of explanation, the present disclosure will be described below based on nanopillars.

[0057] That is, the nanostructure (121) may include a plurality of nanopillars (1210), the nanopillars (1210) are formed protruding along the surface of the sensing layer (1212), and impurities may be doped into the upper surface of the nanostructure (121).

[0058] First, the insulating layer (1211) adjusts reactivity to pressure and prevents unnecessary charge transfer. Here, the insulating layer (1211) can be formed by applying a thermal oxidation process that oxidizes a silicon substrate under an oxygen atmosphere at a high temperature (900 to 1100°C). For example, the insulating layer (1211) is composed of silicon oxide (SiO₂) to serve as an electrical insulation layer, and its thickness can be controlled to 500 nm to 2 μm. Additionally, if necessary, a SiO₂ layer may be additionally deposited using a Plasma Enhanced Chemical Vapor Deposition (PECVD) process.

[0059] Additionally, the insulating layer (1211) may be formed based on at least one material among silicon nitride (Si3N4), aluminum oxide (Al2O3), titanium oxide (TiO2), magnesium oxide (MgO), germanium oxide (GeO2), or polyimide, in addition to silicon oxide (SiO2).

[0060] However, each insulating layer (2212) is not limited to the materials listed above and may be formed from other materials or a mixture of those materials.

[0061] Meanwhile, the sensing layer (1212) deforms as external pressure is applied, thereby changing the electrical characteristics (resistance, voltage, etc.) of the pressure sensor (100) to detect pressure information. To this end, the sensing layer (1212) is designed with a thin and flexible structure so as to be sensitive to even minute changes in pressure.

[0062] For example, the sensing layer (1212) can be formed by placing a silicon thin film on the insulating layer (1211) using a Silicon-On-Insulator (SOI) wafer. If it is not an SOI wafer, a polysilicon thin film (Poly-Si) can be deposited using a Low Pressure Chemical Vapor Deposition (LPCVD) process. The thickness of this sensing layer (1212) is controlled to be about 1 to 10 μm, and it can be manufactured with a fine thickness so as to be sensitive to pressure.

[0063] As previously explained, a doping layer (1213) may be formed on the upper surface of the sensing layer (1212) as specific impurities are doped onto the upper surface of the nanostructure (121). This involves injecting specific impurities, thereby allowing for the adjustment of resistance values ​​or the optimization of semiconductor characteristics. For example, the doping layer (1213) may be formed by being composed of boron, phosphorus, arsenic, antimony, etc. In this case, the doping layer (1213) may be formed through an ion implantation or thermal diffusion process. This doping layer (1213) may function as a protective layer or an electrode layer. That is, the doping layer (1213) may be an electrode that transmits electrical signals or may perform the function of protecting the sensor from the external environment.

[0064] Meanwhile, although not shown in FIG. 1, an electrode portion including at least one electrode may be disposed and formed between the substrate (110) and the sensing portion (120) or on the upper part of the sensing portion (120). In this case, the electrode portion may be electrically connected to the sensing portion (120) to detect changing pressure.

[0065] FIGS. 3 to 5 are perspective views of various examples of the configuration of a nanostructure formed in a nanostructure-based pressure sensor according to one embodiment of the present disclosure.

[0066] First, FIG. 3 is an exemplary perspective view of a nanostructure (121) according to one embodiment of the present disclosure. FIG. 3 is illustrated as each nanopillar (1210) having a cylindrical shape with an upper portion formed in a curved shape. However, in various embodiments of the present disclosure, the shape of each nanopillar (1210) is not limited thereto and can be formed in various shapes such as a cone, cylinder, square prism, pyramid, porous prism, branching, etc. These various shapes may be referred to as nanowires, nanorods, nanoneedles, nanocones, nanotrones, etc.

[0067] FIG. 4 shows an exemplary cross-sectional view of a nanostructure according to one embodiment of the present disclosure, and for convenience of explanation, it will be described with reference to FIG. 5.

[0068] Specifically, the nanostructure (121) may include a plurality of nanofillers (1210), and the shape of the nanostructure (121) may be determined by the plurality of nanofillers (1210).

[0069] At this time, each nano filler (1210) is formed by protruding from the surface of a curved sensing layer (1212) formed on an insulating layer (1211), and may be in an integral form with the surface (F) of the sensing layer (1212), or may be an attached type configuration independent of the surface (F) that is disposed on the surface (F). However, it is not limited thereto, and the nano filler (1210) may be used in a mixed integral or attached form.

[0070] Additionally, each nano filler (1210) may be made of an elastic polymer. Since the elastic polymer has elasticity, when a plurality of nano fillers (1210) are deformed, the plurality of nano fillers (1210) may have a restoring force. Due to the elasticity and restoring force of these nano fillers (1210), bacteria attached to the nanostructure (1221) can be ruptured, reduced, and removed.

[0071] Additionally, a plurality of nano fillers (1210) may have a suitable diameter, height, and arranged spacing to reduce or eliminate bacteria. More specifically, the diameter (W1) of each nano filler (1210) may be 50 nm to 1,000 nm, preferably 200 nm to 500 nm. Additionally, the height (H1) of each nano filler (1210) may be 0.1 μm to 2 μm, preferably 0.5 μm to 1.5 μm. Meanwhile, the spacing (W2) between each nano filler (1210) may be 0.2 μm to 2 μm.

[0072] Each of these nano-fillers (1210) may be arranged with the same diameter and height, but may also be formed and arranged with different diameters or heights. For example, as shown in FIG. 5 (a), a plurality of nano-fillers (1210) may be formed and arranged to have a height that increases in a specific direction in one cross-section. Also, as shown in FIG. 5 (b), the height of the nano-fillers arranged on the outer side of a cross-section of a plurality of nano-fillers (1210) may be formed lower than the height of the nano-fillers arranged on the inner side. Meanwhile, as shown in FIG. 5 (c), the height of the nano-fillers arranged on the inner side of a cross-section of a plurality of nano-fillers (1210) may be formed lower than the height of the nano-fillers arranged on the outer side.

[0073] In another embodiment, a functional layer (not shown) may be further formed on the impurity-doped nanostructure (121). However, since pressure sensing performance may be impaired by this functional layer, the functional layer may not be formed at all, or if formed, it may be formed thinly (at the nanometer level) to minimize the effect on temperature sensing. This functional layer may impart a bacterial adhesion effect to the nanostructure (121). In this case, the functional layer may refer to a layer consisting of some or all of an ionic polymer disposed on the nanopillar (1210). Here, the ionic polymer can be produced by polymerizing a cationic monomer and an anionic monomer by chemical vapor deposition using an initiator, and the cationic monomer may include at least one of dimethylaminoethyl methacrylate (DMAEMA), 2-dimethylaminomethyl styrene (DMAMAS), n-vinylimidazole (VIDZ), and 4-vinyl pyridine (4VP), but is not limited thereto. In addition, the anionic monomer may include at least one of vinylbenzyl chloride (VBC), maleic anhydride (MA), glycidyl methacrylate (GMA), and 2-chloroethyl acrylate (CEA), but is not limited thereto.

[0074] Through the polymerization of such cationic monomers and anionic monomers, ionic polymers p(VBC-co-DMAEMA), p(VBC-co-DMAMAS), p(VBC-co-VIDZ), p(VBC-co-4VP), p(MA-co-DMAEMA), p(MA-co-DMAMAS), p(MA-co-VIDZ), p(MA-co-4VP), p(GMA-co-DMAEMA), p(GMA-co-DMAMAS), p(GMA-co-VIDZ), p(GMA-co-4VP), p(CEA-co-DMAEMA), p(CEA-co-DMAMAS), p(CEA-co-VIDZ), and p(CEA-co-4VP) can be formed.

[0075] In the formed ionomer polymer p(VBC-co-DMAEMA), the ratio of VBC to DMAEMA can be 1:1 to 1:10, preferably 1:2 to 1:6, and more preferably 1:4.

[0076] Furthermore, the functional layer may have a thickness suitable for effectively removing or reducing bacteria. For example, the thickness (H3) of the functional layer may be 10 nm to 100 nm. Accordingly, the height (H1) of the nanopillar (1210) may be a height that includes the thickness (H2) of the insulating layer (1211), the thickness (H3) of the protective layer (1213), and the thickness (H3) of the functional layer.

[0077] Due to the configuration of the nanostructure (121) including the above nanopillars and functional layer, the shape in which the functional layer to be disposed on the plurality of nanopillars (1210) is arranged can be varied, thereby facilitating the attachment of the ends of bacteria or bacterial colonies of various sizes to the functional layer. At the same time, since the shape in which the plurality of nanopillars (1210) are arranged can be varied, bacteria fixed to the functional layer formed on the plurality of nanopillars (1210) can be modified in various ways. Accordingly, fixation and significant modification can be caused for bacteria or bacterial colonies of various sizes, thereby improving the antibacterial properties of the nanostructure.

[0078] However, as explained above, since a doping layer (1213) can be formed on the nanostructure (121), when forming a functional layer in the presence of the doping layer (1213), the components and characteristics of the two materials should be considered. For example, whether the two materials chemically react, whether they interfere with each other's operation, or whether the two materials can be formed stably and uniformly can be considered.

[0079] FIG. 6 is a flowchart schematically illustrating a method for manufacturing a nanostructure-based pressure sensor according to one embodiment of the present disclosure, wherein each step can be performed by an apparatus.

[0080] Referring to FIG. 6, the device forms a sensing portion (120) including a nanostructure on a provided substrate (110) (S110). At this time, the device can improve pressure sensing sensitivity by forming the sensing portion (120) in a zigzag pattern or a wave pattern. Additionally, the pressure sensing sensitivity can be improved by forming a nanostructure (121) on the sensing portion (120) in the form of a nanowire or a nanopillar.

[0081] Specifically, in step S110, the device forms an insulating layer (1211) on a substrate (110), forms a curved sensing layer (1212) by laminating it on the insulating layer (1211), and then can dope it with a specific impurity.

[0082] Next, the device forms an electrode portion for detecting pressure changes between the substrate (110) and the sensing portion (120), or on top of the sensing portion (120) (S120). At this time, the electrode can be formed at a desired location using a patterning and deposition process, and, for example, gold (Au), silver (Ag), ITO (Indium Tin Oxide), etc., can be used as the electrode material.

[0083] Meanwhile, although not illustrated in FIG. 2, after step S120, the device may perform additional etching and patterning processes as needed to optimize the structure of the pressure sensor. In addition, the durability of the pressure sensor (100) may be increased by further forming a protective layer or passivation layer to protect the sensing part (120).

[0084] As described above, according to the present disclosure, by expanding the sensing surface three-dimensionally based on a nanostructure to increase the detectable area within the same area, the limitations of existing silicon-based pressure sensors can be overcome, and the sensor can be designed to enable high sensitivity and high precision pressure measurement, and is expected to be utilized in various industrial and medical fields.

[0085] The examples of the present disclosure disclosed in this specification and drawings are provided merely to facilitate the explanation of the technical content of the present disclosure and to aid in understanding the present disclosure, and are not intended to limit the scope of the present name. It is obvious to those skilled in the art that other variations based on the technical concept of the invention are possible in addition to the examples disclosed herein.

[0086] [National R&D projects that supported this invention]

[0087] [Project ID] 2410012178

[0088] [Assignment No.] 00508418

[0089] [Ministry Name] Ministry of Trade, Industry and Energy

[0090] [Project Management (Specialized) Agency Name] Korea Institute of Industrial Technology Planning and Evaluation

[0091] [Research Project Name] Materials and Components Technology Development (R&D)

[0092] [Project Title] (Sub-project 3) Development of High-Quality Antibody-Drug Conjugate (ADC) Smart Production Components and Equipment

[0093] [Name of Project Performing Organization] Nexa Co., Ltd.

[0094] [Research Period] 2024.10.01 ~ 2028.12.31

[0095] [National R&D projects that supported this invention]

[0096] [Project ID] 2410009758

[0097] [Assignment No.] 00438660

[0098] [Ministry Name] Ministry of Trade, Industry and Energy

[0099] [Project Management (Specialized) Agency Name] Korea Institute of Industrial Technology Planning and Evaluation

[0100] [Research Project Name] Materials and Components Technology Development (R&D)

[0101] [Project Title] Development of Key Components for Real-time Process Analysis of Freeze-Drying Nucleic Acid Therapeutics

[0102] [Name of Project Implementing Organization] Osong Advanced Medical Industry Promotion Foundation

[0103] [Research Period] July 1, 2024 ~ December 31, 2028

[0104] [National R&D projects that supported this invention]

[0105] [Project Unique ID] Not Assigned

[0106] [Assignment No.] PCP25019M

[0107] [Ministry Name] Ministry of Science and ICT

[0108] [Project Management (Specialized) Agency Name] National Nanotechnology Center

[0109] [Research Project Name] Nano Open Innovation Lab Collaboration Project / Support Project for Mass Production Prototype Development for Innovative Companies

[0110] [Project Title] [OI] Development of Bio-MEMS-based Sensor and System Technology for Detecting Radiation-Resistant Biomarkers in Colorectal Cancer

[0111] [Name of Project Performing Organization] National Nanotechnology Center

[0112] [Research Period] 2025.01.01 ~ 2026.12.31

[0113] [National R&D projects that supported this invention]

[0114] [Project Unique ID] Not Assigned

[0115] [Assignment No.] PCP25017M

[0116] [Ministry Name] Ministry of Science and ICT

[0117] [Project Management (Specialized) Agency Name] National Nanotechnology Center

[0118] [Research Project Name] Testbed Materials, Parts, and Equipment Joint Technology Development Project / Demand-Linked Mass Production Technology Development Project

[0119] [Project Title] [SBID] Development of Mass Production Technology for High-Sensitivity Pressure Sensors Using Semiconductor Process Technology

[0120] [Name of Project Performing Organization] National Nanotechnology Center

[0121] [Research Period] 2025.01.01 ~ 2026.12.31

[0122] [National R&D projects that supported this invention]

[0123] [Project Unique ID] Not Assigned

[0124] [Project No.] PNP25004M

[0125] [Ministry Name] Ministry of Science and ICT

[0126] [Project Management (Specialized) Agency Name] National Nanotechnology Center

[0127] [Research Project Name] Support for Nanotechnology Center Operation Expenses (Major Project Cost) / Development of Semiconductor Process-Based Nanomedical Devices

[0128] [Research Project Title] Platform-Linked Product Commercialization Project

[0129] [Name of Project Performing Organization] National Nanotechnology Center

[0130] [Research Period] 2025.01.01 ~ 2025.12.31

[0131] [National R&D projects that supported this invention]

[0132] [Project ID] 2710090724

[0133] [Project No.] CP24011M

[0134] [Ministry Name] Ministry of Science and ICT

[0135] [Project Management (Specialized) Agency Name] National Nanotechnology Center

[0136] [Research Project Name] Support for National Nanotechnology Center Operating Expenses (Major Project Funding) / Nano Open Innovation Lab Collaboration Project

[0137] [Project Title] Development of Bio-MEMS-based Osmotic Pressure Sensor and Portable System Technology for Dry Eye Diagnosis

[0138] [Name of Project Performing Organization] National Nanotechnology Center

[0139] [Research Period] 2023.01.01 ~ 2025.12.31

[0140] [National R&D projects that supported this invention]

[0141] [Project ID] 2460002622

[0142] [Assignment No.] KH140543

[0143] [Ministry Name] Ministry of Health and Welfare

[0144] [Name of Project Management (Specialized) Agency] Korea Health Industry Development Institute

[0145] [Project Name] Inter-Ministerial Infectious Disease Control System Advancement Project (R&D)

[0146] [Project Title] Development of a Digital Diagnostic Device Based on a Sub-500nm Nano-Well Structure for On-Site Detection of Three Types of Respiratory Viruses

[0147] [Name of Project Performing Organization] National Nanotechnology Center

[0148] [Research Period] June 1, 2023 ~ December 31, 2026

Claims

1. Substrate; It includes a sensing part formed on the above substrate and having a nanostructure arranged thereon, The above-mentioned sensing unit is, Insulating layer; A sensing layer formed on the insulating layer and deformed as external pressure is applied; and A doping layer formed by doping specific impurities on the upper surface of the above sensing layer, comprising Nanostructure-based pressure sensor.

2. In Paragraph 1, A protective layer further comprising a protective layer that protects the above-mentioned sensing part, Nanostructure-based pressure sensor.

3. In Paragraph 1, The above nanostructure is, Protruding along the surface of the above-mentioned sensing layer, Nanostructure-based pressure sensor.

4. In Paragraph 3, The above nanostructure is, Formed in the form of nanowires or nanopillars, Nanostructure-based pressure sensor.

5. In Paragraph 4, The above nanowire is, Formed in a continuous pattern on the above sensing layer, The above nanofilament is, independently spaced apart at regular intervals on the above sensing layer, Nanostructure-based pressure sensor.

6. In Paragraph 5, The above nanofilament is, The diameter is 50 nm to 1000 nm, and the height is 0.1 μm to 2 μm, and The above interval is, 0.2 μm to 2 μm, Nanostructure-based pressure sensor.

7. In Paragraph 1, An electrode portion is further formed between the above substrate and the above sensing portion, or on the upper part of the above sensing portion. Nanostructure-based pressure sensor.

8. In Paragraph 1, The aforementioned specific impurities are, Doped via an ion implantation or thermal diffusion process and comprising at least one of boron, boron, phosphorus, arsenic, or antimony, Nanostructure-based pressure sensor.

9. In Paragraph 1, The above insulating layer is, Formed based on at least one material selected from silicon oxide (SiO2), silicon nitride (Si3N4), aluminum oxide (Al2O3), titanium oxide (TiO2), magnesium oxide (MgO), germanium oxide (GeO2), or polyimide, Nanostructure-based pressure sensor.

10. A method for manufacturing a nanostructure-based pressure sensor performed by a device, A step of forming a sensing portion including a nanostructure on a provided substrate; and The method includes the step of forming an electrode portion between the substrate and the sensing portion, or on the upper part of the sensing portion. The step of forming the above-mentioned sensing part is, Step of forming an insulating layer; A step of forming a curved sensing layer by laminating it on the insulating layer; and A step comprising doping specific impurities on the above-mentioned sensing layer, Method for manufacturing a nanostructure-based pressure sensor.

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