P-type group IIIA metal oxide semiconductor thin film and preparation method therefor

Abstract

The present application belongs to the technical field of semiconductor materials. Provided in the present application are a p-type group IIIA metal oxide semiconductor thin film and a preparation method therefor. In the preparation method, an MOCVD method is used, and a group IIIA metal source, an oxygen source, a group VIA non-oxygen precursor and a p-type doping precursor are used as raw materials, and are subjected to a deposition reaction so as to obtain a p-type group IIIA metal oxide semiconductor thin film. By using two specific impurities to co-dope a group IIIA metal oxide in the process of MOCVD, the p-type group IIIA metal oxide semiconductor thin film is directly obtained, and the energy levels of acceptor and donor doping are effectively reduced, thereby increasing the number of carriers generated by each doping. In addition, the preparation method facilitates the implementation of epitaxial growth on a group IIIA metal oxide substrate to form a single-layer or multi-layer structure, is simple and convenient to operate, has low costs, and is therefore suitable for large-scale preparation.

Description

A p-type group IIIA metal oxide semiconductor thin film and its preparation method Technical Field

[0001] This application belongs to the field of semiconductor materials technology, and relates to a p-type IIIA group metal oxide semiconductor thin film and its preparation method. Background Technology

[0002] Compact, high-power systems, such as high-efficiency power switches, RF devices, and converters capable of handling high power densities, require wide-bandgap (WBG) and ultra-wide-bandgap (UWBG) semiconductors and devices with vertical architectures. To achieve high efficiency, these devices need to utilize pn junctions and selectively doped structural designs.

[0003] Taking gallium nitride (GaN) as an example, although sufficient p-type doping or n-type doping can currently be achieved, there are some problems in forming highly reliable and high-performance selective lateral region pn junctions, which limits its application in fields such as vertical power transistors. Only by first achieving selective region doping in GaN to obtain sufficiently high-quality materials to form defect-free pn junctions can the advantages of vertical power devices be fully realized. Meanwhile, although GaN and its alloys still have some room for development, to meet higher requirements in terms of power handling capacity and cost and achieve the next level of improvement, it is necessary to further develop new ultra-wide bandgap semiconductor materials, such as gallium oxide (Ga2O3), cubic boron nitride (c-BN), and diamond.

[0004] Gallium oxide (GaO) possesses a bandgap of 4.9 eV, making it a promising ultra-wide bandgap semiconductor. The Baliga figure of merit (BFOM) measures the power loss of a semiconductor; a higher BFOM value indicates lower losses, and it is often used to evaluate the suitability of semiconductor materials for power electronics. Among the materials studied in the current literature, Ga2O3 has a theoretical breakdown voltage of 8 MV / cm, and its BFOM value is 4 times that of GaN and 14 times that of 4H-SiC. Therefore, compared to 4H-SiC and GaN, Ga2O3 is expected to have lower resistive and switching losses. Moreover, due to its higher dielectric constant, Ga2O3 has a higher critical field strength than silicon at the same doping level. Therefore, at the same doping level, the drift region thickness of Ga2O3 is only 1 / 27th that of silicon, giving Ga2O3 higher power density capabilities. In terms of Johnson's figure of merit, which measures the suitability of semiconductor materials for high-frequency operation, Ga2O3 is 6 times and 15 times higher than GaN and SiC, respectively, making it highly attractive for higher-power radio frequency applications. Therefore, Ga2O3 is a strong material candidate for next-generation power device technology.

[0005] However, while these novel ultra-wide bandgap semiconductors have made some progress in n-type doping, many doping problems remain to be solved. For example, the n-type conductivity of Ga₂O₃ can be easily tuned over multiple orders of magnitude, but achieving p-type Ga₂O₃ is key to further expanding its applications. Although theoretically p-type doping can be achieved by replacing Ga sites with group IIB (Zn) elements or O sites with group VA elements (N, P, and As), reports of successful shallow acceptor doping and hole conduction in Ga₂O₃ are still very limited.

[0006] Therefore, it is still necessary to study schemes for forming p-type ultrawide wide-bandgap semiconductor materials to support the application and development of high-power electronic components. Summary of the Invention

[0007] This application provides a p-type group IIIA metal oxide semiconductor thin film and its preparation method. The preparation method employs MOCVD (Metal-Organic Chemical Vapor Deposition) using a group IIIA metal source, an oxygen source, a group VIA non-oxygen precursor, and a p-type doped precursor as raw materials to perform a deposition reaction, thereby obtaining a p-type group IIIA metal oxide semiconductor thin film. By using two specific impurities to co-dopat the group IIIA metal oxide during the MOCVD deposition process, a p-type group IIIA metal oxide semiconductor thin film is directly obtained, effectively reducing the energy levels of acceptor and donor doping, increasing the number of charge carriers generated by each dopant, and facilitating epitaxial growth to form single-layer or multi-layer structures on group IIIA metal oxide substrates. The method is simple, convenient, and low-cost, making it suitable for large-scale fabrication.

[0008] In a first aspect, this application provides a method for preparing p-type group IIIA metal oxide semiconductor thin films, which employs MOCVD method, using group IIIA metal source, oxygen source, group VIA non-oxygen precursor and p-type doped precursor as raw materials to carry out deposition reaction to obtain p-type group IIIA metal oxide semiconductor thin films.

[0009] The preparation method described in this application directly obtains p-type IIIA metal oxide semiconductor thin films by co-doping IIIA metal oxides with two specific impurities during the MOCVD deposition process. This effectively reduces the energy levels of acceptor and donor doping, increases the number of charge carriers generated by each dopant, and reduces the resistivity of the thin film without significantly affecting the bandgap of the thin film material itself. Furthermore, this preparation method facilitates epitaxial growth on IIIA metal oxide substrates to form single-layer or multi-layer structures, is simple and convenient to operate, has low cost, and is suitable for large-scale fabrication.

[0010] The following are preferred technical solutions of this application, but are not intended to limit the technical solutions provided in this application. The technical objectives and beneficial effects of this application can be better achieved through the following technical solutions.

[0011] As a preferred technical solution of this application, the group IIIA elements in the group IIIA metal source include gallium and / or aluminum.

[0012] Preferably, the group IIIA metal source includes organometallic compounds containing group IIIA elements.

[0013] Preferably, the organometallic compound containing a Group IIIA metal includes at least one of trimethylgallium, triethylgallium, trimethylaluminum, or triethylaluminum.

[0014] As a preferred technical solution of this application, the oxygen source includes at least one of oxygen (O2), water (H2O) or nitrous oxide (N2O).

[0015] Preferably, the molar ratio of oxygen in the oxygen source to group IIIA elements in the group IIIA metal source is (100-500):1, for example, 100:1, 150:1, 200:1, 250:1, 300:1, 350:1, 400:1, 450:1 or 500:1, etc.

[0016] Preferably, when the oxygen source contains oxygen, the molar ratio of oxygen in the oxygen to the group IIIA element in the group IIIA metal source is (350-500):1; when the oxygen source contains nitrous oxide, the molar ratio of oxygen in the nitrous oxide to the group IIIA element in the group IIIA metal source is (200-350):1; when the oxygen source contains water, the molar ratio of oxygen in the water to the group IIIA element in the group IIIA metal source is (100-200):1.

[0017] As a preferred technical solution of this application, the group VIA elements in the group VIA non-oxygen precursor include at least one of sulfur, selenium, or tellurium.

[0018] Preferably, the group VIA non-oxygen precursor comprises an organic compound containing a group VIA element.

[0019] Preferably, the organic compound containing a Group VIA element includes at least one of thiols, dimethyl sulfide, diethyl sulfide, selenool, dimethyl selenide, diethyl selenide, tellurol, dimethyl telluride, or diethyl telluride.

[0020] Preferably, the molar ratio of the Group IIIA element in the Group IIIA metal source to the Group VIA element in the Group VIA non-oxygen precursor is (3-30):1, for example, 3:1, 3.3:1, 3.5:1, 3.8:1, 4:1, 4.2:1, 4.5:1, 4.8:1, 5:1, 8:1, 10:1, 13:1, 15:1, 18:1, 20:1, 23:1, 25:1, 28:1 or 30:1, but it is not limited to the listed values. Other unlisted values ​​within the above range are also applicable.

[0021] It should be noted that the amount of Group VIA elements incorporated into the Group VIA non-oxygen precursor affects the carrier concentration of the resulting p-type Group IIIA metal-oxide-semiconductor thin film. When the molar ratio of Group IIIA elements in the Group IIIA metal source to Group VIA elements in the Group VIA non-oxygen precursor is 30:1, the carrier concentration of the resulting p-type Group IIIA metal-oxide-semiconductor thin film should still be ≥1.0 × 10⁻⁶. 13 cm -3 .

[0022] As a preferred technical solution of this application, the p-type doped precursor contains at least one doping element selected from lithium, beryllium, or magnesium.

[0023] Preferably, the p-type doped precursor comprises an organometallic compound containing a dopant element.

[0024] Preferably, the organometallic compound containing the dopant element includes at least one of lithium acetylacetonate, beryllium acetylacetonate, magnesium thiocene, or diethylmagnesium.

[0025] Preferably, the molar ratio of the dopant element in the p-type doped precursor to the group IIIA element in the group IIIA metal source is (0-10):1000, for example, 0:1000 (i.e., no p-type doped precursor is used), 0.1:1000, 0.2:1000, 0.3:1000, 0.4:1000, 0.5:1000, 0.6:1000, 0.7:1000, 0.8:1000, 0.9:1000, 1:1000, 2:1000, 3:1000, 4:1000, 5:1000, 6:1000, 7:1000, 8:1000, 9:1000, or 10:1000, etc., preferably (0.001-8):1000, but not limited to the listed values, other unlisted values ​​within the above range are also applicable.

[0026] It should be noted that when the molar ratio of the dopant element in the p-type doped precursor to the group IIIA element in the group IIIA metal source is 0:1000, the resulting p-type group IIIA metal-oxide-semiconductor thin film corresponds to the lowest hole concentration (≥1.0×10⁻⁶). 13 cm -3 When the molar ratio is 10:1000, the highest hole concentration is ≤5×10⁻⁶. 20 cm -3 ).

[0027] As a preferred technical solution of this application, the group IIIA metal source, oxygen source, group VIA non-oxygen precursor and p-type doped precursor are transported by a carrier gas.

[0028] Preferably, the carrier gas includes nitrogen and / or argon.

[0029] As a preferred technical solution of this application, the temperature of the deposition reaction is 500 to 1000°C, such as 500°C, 600°C, 700°C, 800°C, 900°C or 1000°C, but is not limited to the listed values. Other unlisted values ​​within the above range are also applicable.

[0030] Preferably, the pressure of the deposition reaction is 30 to 100 mbar, such as 30 mbar, 40 mbar, 50 mbar, 60 mbar, 70 mbar, 80 mbar, 90 mbar or 100 mbar, but is not limited to the listed values. Other unlisted values ​​within the above range are also applicable.

[0031] As a preferred technical solution of this application, the deposition reaction is carried out on a substrate.

[0032] Preferably, the substrate material comprises a group IIIA metal oxide to achieve epitaxial deposition. Further, the group IIIA elements in the substrate material are the same as those in the p-type group IIIA metal oxide semiconductor thin film.

[0033] Preferably, the group IIIA metal oxide includes at least one of gallium oxide, aluminum oxide, or aluminum gallium oxide.

[0034] Preferably, the group IIIA metal oxide is n-type doped.

[0035] As a preferred technical solution of this application, after the deposition reaction is completed, annealing is performed to obtain the p-type IIIA group metal oxide semiconductor thin film.

[0036] Preferably, the annealing temperature is 600–1200°C, such as 600°C, 650°C, 700°C, 750°C, 800°C, 850°C, 900°C, 950°C, 1000°C, 1050°C, 1100°C, 1150°C, or 1200°C, and the time is 0.5–5 min, such as 0.5 min, 1 min, 1.5 min, 2 min, 2.5 min, 3 min, 3.5 min, 4 min, 4.5 min, or 5 min, but it is not limited to the listed values. Other unlisted values ​​within the above range are also applicable.

[0037] Preferably, the thickness of the p-type IIIA group metal oxide semiconductor thin film is 50nm to 10μm, such as 50nm, 80nm, 100nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, 1μm, 2μm, 3μm, 4μm, 5μm, 6μm, 7μm, 8μm, 9μm, or 10μm, but is not limited to the listed values. Other unlisted values ​​within the above range are also applicable.

[0038] Secondly, this application provides a p-type group IIIA metal oxide semiconductor thin film, obtained according to the preparation method described in the first aspect.

[0039] As a preferred embodiment of this application, the carrier concentration of the p-type IIIA group metal-oxide-semiconductor thin film is 1.0 × 10⁻⁶. 13 ~5×10 20 cm -3 For example, 1.0×10 13 cm -3 5×10 13 cm -3 8×10 13 cm -3 1×10 14 cm -3 5×10 14 cm -3 8×10 14 cm -3 1×10 15 cm -3 5×10 15 cm -3 8×10 15 cm -3 1×10 16 cm -3 5×10 16 cm -3 8×10 16 cm -31×10 17 cm -3 5×10 17 cm -3 8×10 17 cm -3 1×10 18 cm -3 5×10 18 cm -3 8×10 18 cm -3 1×10 19 cm -3 5×10 19 cm -3 8×10 19 cm -3 1×10 20 cm -3 Or 5×10 20 cm -3 Resistivity ≤2500Ω·cm, such as 2500Ω·cm, 2400Ω·cm, 2300Ω·cm, 2200Ω·cm, 2100Ω·cm, 2000Ω·cm, 1800Ω·cm, 1600Ω·cm, 1400Ω·cm, 1200Ω·cm, 1000Ω·cm, 800Ω·cm, 500Ω·cm, 300Ω·cm, 100Ω·cm, 80Ω·cm, 60Ω·cm, 40Ω·cm, 20Ω·cm, 10Ω·cm, 8Ω·cm, or 5Ω·cm, etc., further preferably ≤2000Ω·cm, but not limited to the listed values, other unlisted values ​​within the above range are also applicable.

[0040] Thirdly, this application provides an application of the p-type group IIIA metal-oxide-semiconductor thin film described in the second aspect, the application including its use in power devices such as PN junction diodes, avalanche breakdown diodes, or field-effect transistors.

[0041] Compared with existing technical solutions, this application has at least the following beneficial effects:

[0042] The preparation method described in this application directly obtains p-type IIIA metal oxide semiconductor thin films by co-doping IIIA metal oxides with two specific impurities during the MOCVD deposition process. This effectively reduces the energy levels of acceptor and donor doping, increases the number of charge carriers generated by each dopant, and reduces the resistivity of the thin film without significantly affecting the bandgap of the thin film material itself. Furthermore, this preparation method facilitates epitaxial growth on IIIA metal oxide substrates to form single-layer or multi-layer structures, is simple and convenient to operate, has low cost, and is suitable for large-scale fabrication. Attached Figure Description

[0043] Figure 1 is a resistivity test diagram of the p-type IIIA group metal oxide semiconductor thin film obtained in Example 1. Detailed Implementation

[0044] The technical solution of this application will be further described below through specific implementation methods.

[0045] Those skilled in the art should understand that the embodiments described are merely illustrative of this application and should not be construed as specific limitations on this application.

[0046] Example 1

[0047] This embodiment provides a method for preparing a p-type group IIIA metal-oxide-semiconductor thin film, the method comprising:

[0048] (1) The cleaned iron-doped semi-insulating gallium oxide wafer is placed in the chemical vapor deposition reaction chamber as a substrate. After the reaction chamber is evacuated, nitrogen and oxygen are introduced while heating at 1000°C for 10 minutes to remove surface contaminants.

[0049] (2) Next, the temperature is lowered to 800℃ and maintained, and the pressure is reduced to 30 mbar and maintained, while 9.6 × 10⁻⁶ mbar is introduced. -5 Triethylgallium at a flow rate of 0.25 mol / min is introduced with O2, and 3.2 × 10⁻⁶ mol / min is introduced. -5 Diethylselenium at a flow rate of mol / min, 1×10 -8 Magnesium thiocene (Mg) was subjected to MOCVD deposition for 2 hours to obtain a p-type doped epitaxial layer with a thickness of 1.5 μm, namely a p-type group IIIA metal oxide semiconductor thin film. In the p-type group IIIA metal oxide semiconductor thin film, the molar ratio of Se to Ga atoms is 1:30, and the ratio of Mg to Ga is 1:96000.

[0050] (3) After cooling, the grown wafer is removed from the chemical vapor deposition reaction chamber.

[0051] Example 2

[0052] This embodiment provides a method for preparing a p-type group IIIA metal oxide semiconductor thin film. In step (2) of the preparation method, diethylselenium is replaced with diethyltellurium, and its dosage is changed from 3.2 × 10⁻⁶. -5 The mol / min was adjusted to 3.2 × 10⁻⁶. -4 The molar ratio of Te to Ga atoms was 1:3, and all other conditions were exactly the same as in Example 1.

[0053] Example 3

[0054] This embodiment provides a method for preparing a p-type group IIIA metal oxide semiconductor thin film. In step (2) of the preparation method, diethylselenium is replaced with diethyltellurium, and its dosage is changed from 3.2 × 10⁻⁶. -5 The mol / min was adjusted to 1.92 × 10⁻⁶. -4 The molar ratio of Te to Ga atoms was 1:5, and all other conditions were exactly the same as in Example 1.

[0055] Example 4

[0056] This embodiment provides a method for preparing a p-type group IIIA metal oxide semiconductor thin film. In step (2) of the preparation method, diethylselenium is replaced with diethyltellurium, and its dosage is changed from 3.2 × 10⁻⁶. -5 The mol / min was adjusted to 5.33 × 10⁻⁶. -5 The molar ratio of Te to Ga atoms was 1:18, and all other conditions were exactly the same as in Example 1.

[0057] Example 5

[0058] This embodiment provides a method for preparing a p-type group IIIA metal oxide semiconductor thin film. In step (2) of the preparation method, the amount of diethylselenium is reduced from 3.2 × 10⁻⁶. -5 The mol / min was adjusted to 3.2 × 10⁻⁶. -5 The molar ratio of Te to Ga atoms was 1:30, and all other conditions were exactly the same as in Example 1.

[0059] Comparative Example 1

[0060] This comparative example provides a method for preparing a group IIIA metal oxide semiconductor thin film. In step (2) of the preparation method, the amount of diethylselenium used is increased from 3.2 × 10⁻⁶. -5 The flow rate was adjusted to 0 mol / min, meaning diethylselenium was not used. Apart from the above, the other conditions were exactly the same as in Example 1.

[0061] Comparative Example 2

[0062] This comparative example provides a method for preparing a p-type group IIIA metal oxide semiconductor thin film. In step (2) of the preparation method, the amount of magnesium bis(oxocero) used is reduced from 1×10⁻⁶. -8 The flow rate was adjusted to 0 mol / min, meaning that magnesium pyrocene was not used. Apart from the above, the other conditions were exactly the same as in Example 1.

[0063] Characterization and testing:

[0064] Metal contact layers, such as nickel and / or gold (for example, the thickness of nickel is 20 nm and the thickness of gold is 80 nm), were deposited on the p-type group IIIA metal oxide semiconductor thin films obtained in the examples and comparative examples, and rapid thermal annealing was performed in a nitrogen atmosphere at 470 °C; the conductivity type and electrical properties of p-type gallium oxide were evaluated by the van der Bauer method and Hall test (the Hall magnetic field strength in this paper is 1.5 T).

[0065] Figure 1 shows the resistivity of the p-type group IIIA metal oxide semiconductor thin film obtained in Example 1. As can be seen from the figure, its resistivity at room temperature (288.15K to 308.15K) is 30Ω·cm, and its trend is consistent with the trend of semiconductor material resistivity changing with temperature.

[0066] Other data are listed in Table 1.

[0067] Table 1

[0068] As can be seen from Table 1:

[0069] Example 1: Se (Group VIA) and Mg (p-type dopant) were co-doped into a gallium oxide system using MOCVD. A 1.5 μm thick p-type semiconductor film was deposited at 800 °C and 30 mbar, with a room temperature resistivity of 32.86 Ω·cm and a carrier concentration of 8 × 10⁻⁶. 17 cm -3 This verifies that the dual-doping strategy significantly improves hole conductivity.

[0070] Examples 2-5 show that the amount of Group VIA non-oxygen element doping determines the upper limit of carrier concentration and the subsequent resistivity. A comparison of Examples 3-6 shows that when the Te to Ga doping ratio increases from 1:30 to 1:3, the carrier concentration increases from 5.88 × 10⁻⁶. 15 cm -3 Jump to 5×10 18 cm -3 The resistivity decreased by three orders of magnitude, while Comparative Example 1, which completely abandoned Group VIA doping, could not form effective conductivity (resistivity > 2 × 10⁻⁶). 5 The results (Ω·cm) directly confirm the crucial role of donor compensation in p-type conductivity of group VIA elements.

[0071] The test results of Comparative Example 2 clearly demonstrate that single doping with a Group VIA non-oxygen element (such as selenium or tellurium) alone is insufficient to form enough effective p-type charge carriers. In this comparative example, no p-type dopant (magnesium) was introduced; only Group VIA selenium was introduced through diethylselenoselenium. The results show that the upper limit of the charge carrier concentration is only 5.7 × 10⁻⁶. 14 cm -3The resistivity is as high as 5865 Ω·cm, which is far inferior to that of Example 1 (carrier concentration of 8 × 10⁻⁶ when magnesium is doped). 17 cm -3 (Resistivity 32.86 Ω·cm).

[0072] This phenomenon can be explained by semiconductor band theory and defect chemistry mechanisms: Group VIA elements (such as Se) replace oxygen sites (O). 2- When providing donor electronic (Se) 4+ →O 2- (forming a +2 charge state), but simple donor doping increases n-type conductivity and cannot directly induce hole formation. However, in the dual-doped system of this application, p-type dopants (such as Mg) 2+ ) Replacement Al 3+ / Ga 3+ The formation of acceptor states (generating -1 charge states) at the sites, combined with group VIA donor doping, creates a charge compensation effect, thereby suppressing donor-acceptor self-compensation and reducing the ionization energy of magnesium acceptors. For example, theoretically, in a group IIIA metal oxide semiconductor with mono-doped Mg, the Mg acceptor level depth is approximately 1.1 eV. However, in a Se / Mg co-doped system, the composite defect center formed by the Se donor level (shallow level) and the Mg acceptor can reduce the ionization energy to below 0.8 eV, significantly improving the hole ionization efficiency at room temperature. The low carrier concentration in Comparative Example 2 is precisely due to the lack of synergistic effect from acceptor doping. Mono-doped group VIA donors not only fail to provide hole conduction channels but may also exacerbate carrier scattering due to excessive free electrons, leading to resistivity deterioration. Therefore, co-doping of group VIA non-oxygen elements with p-type dopants is a key innovation for overcoming the conductivity bottleneck of p-type group IIIA metal oxide semiconductors.

[0073] In summary, the preparation method described in this application directly obtains p-type IIIA metal oxide semiconductor thin films by co-doping IIIA metal oxides with two specific impurities during the MOCVD deposition process. This effectively reduces the energy levels of acceptor and donor doping, increases the number of charge carriers generated by each dopant, and lowers the resistivity of the thin film without significantly affecting the bandgap of the thin film material itself. Furthermore, this preparation method facilitates epitaxial growth on IIIA metal oxide substrates to form single-layer or multi-layer structures, is simple and convenient to operate, has low cost, and is suitable for large-scale fabrication.

[0074] The preferred embodiments of this application have been described in detail above. However, this application is not limited to the specific details of the above embodiments. Within the scope of the technical concept of this application, various simple modifications can be made to the technical solution of this application, and these simple modifications all fall within the protection scope of this application.

[0075] It should also be noted that the various specific technical features described in the above embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, this application will not describe the various possible combinations separately.

[0076] Furthermore, various different implementations of this application can be combined in any way, as long as they do not violate the spirit of this application, they should also be regarded as the content disclosed in this application.

Claims

1. A method for preparing a p-type group IIIA metal oxide semiconductor thin film, comprising using MOCVD method, employing a group IIIA metal source, an oxygen source, a group VIA non-oxygen precursor and a p-type doped precursor as raw materials, and performing a deposition reaction to obtain a p-type group IIIA metal oxide semiconductor thin film.

2. The method for preparing p-type IIIA group metal oxide semiconductor thin films according to claim 1, wherein, The group IIIA elements in the group IIIA metal source include gallium and / or aluminum.

3. The method for preparing p-type group IIIA metal oxide semiconductor thin films according to claim 1 or 2, wherein the group IIIA metal source includes organometallic compounds containing group IIIA elements; Preferably, the organometallic compound containing a Group IIIA metal includes at least one of trimethylgallium, triethylgallium, trimethylaluminum, or triethylaluminum.

4. The method for preparing p-type IIIA group metal oxide semiconductor thin films according to claims 1-3, wherein, The oxygen source includes at least one of oxygen, water, or nitrous oxide; Preferably, the molar ratio of oxygen in the oxygen source to group IIIA elements in the group IIIA metal source is (100-500):

1.

5. The method for preparing a p-type group IIIA metal-oxide-semiconductor thin film according to any one of claims 1-4, wherein, The group VIA non-oxygen precursor includes at least one of sulfur, selenium, or tellurium. Preferably, the group VIA non-oxygen precursor comprises an organic compound containing a group VIA element; Preferably, the organic compound containing a Group VIA element includes at least one of thiols, dimethyl sulfide, diethyl sulfide, selenool, dimethyl selenide, diethyl selenide, tellurol, dimethyl telluride, or diethyl telluride. Preferably, the molar ratio of Group IIIA elements in the Group IIIA metal source to Group VIA elements in the Group VIA non-oxygen precursor is (3-30):

1.

6. The method for preparing a p-type group IIIA metal-oxide-semiconductor thin film according to any one of claims 1-5, wherein, The p-type doped precursor contains at least one doping element selected from lithium, beryllium, or magnesium. Preferably, the p-type doped precursor comprises an organometallic compound containing a dopant element; Preferably, the organometallic compound containing the doped element includes at least one of lithium acetylacetonate, beryllium acetylacetonate, magnesium thiocene, or diethylmagnesium. Preferably, the molar ratio of the dopant element in the p-type doped precursor to the group IIIA element in the group IIIA metal source is (0-10):1000.

7. The method for preparing a p-type group IIIA metal-oxide-semiconductor thin film according to any one of claims 1-6, wherein, The deposition reaction temperature is 500–1000℃; Preferably, the pressure of the deposition reaction is 30 to 100 mbar.

8. The method for preparing a p-type group IIIA metal-oxide-semiconductor thin film according to any one of claims 1-7, wherein, The deposition reaction takes place on a substrate; Preferably, the substrate material comprises a group IIIA metal oxide; Preferably, the group IIIA metal oxide includes at least one of gallium oxide, aluminum oxide, or aluminum gallium oxide; Preferably, the group IIIA metal oxide is n-type doped.

9. The method for preparing a p-type group IIIA metal-oxide-semiconductor thin film according to any one of claims 1-8, wherein, After the deposition reaction is completed, annealing is performed to obtain the p-type IIIA group metal oxide semiconductor thin film; Preferably, the annealing temperature is 600–1200°C, and the time is 0.5–5 min; Preferably, the thickness of the p-type IIIA group metal oxide semiconductor thin film is 50 nm to 10 μm.

10. A p-type group IIIA metal oxide semiconductor thin film, obtained by the preparation method according to any one of claims 1-9.

11. The p-type IIIA group metal-oxide-semiconductor thin film according to claim 10, wherein, The carrier concentration of the p-type group IIIA metal-oxide-semiconductor thin film is 1.0 × 10⁻⁶. 13 ~5×10 20 cm -3 The resistivity at -50℃ to 200℃ is ≤2500Ω·cm.

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