Vibration absorber, decoupling assembly, and installation for semiconductor technology
Patent Information
- Application Number
- PCT/EP2026/056505
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-03-11
- Filing Date
- 2026-03-10
- Publication Date
- 2026-09-17
Smart Images
Figure EP2026056505_17092026_PF_FP_ABST
Abstract
Description
[0001] Vibration damper, decoupling arrangement and system for semiconductor technology
[0002] The present application claims priority over German patent application DE 102025 109296.6 dated 11.03.2025, the contents of which are hereby incorporated in full by reference.
[0003] The invention relates to a vibration damper, a decoupling arrangement provided with the vibration damper and a system for semiconductor technology.
[0004] In order to achieve the desired high accuracies in the manufacturing of semiconductor components (usually in the sub-nanometer range), it is necessary to position the optical elements used in semiconductor lithography with the highest precision, or to maintain a position of the optical elements as accurately as possible once it has been set.
[0005] It is common practice to mechanically mount the optical elements on a support frame. The sensors required for controlling the position of the optical elements, however, are located, at least in part, on a sensor frame that is mechanically decoupled from the support frame.
[0006] To improve the image quality of such a system, the two frames are mounted in a vibration-isolated manner relative to the fixed environment, such as the floor of a production hall. This is achieved, for example, by using intermediate masses mounted on springs, which are connected via a spring to both the fixed environment and the respective frame of the system. If a vibration occurs, for example, due to a vibration in the hall floor, the intermediate mass is initially set into vibration. It is desirable to effectively dampen this vibration. According to current technology, so-called tuned mass dampers, i.e., vibration dampers whose natural frequencies can be adjusted, are used for this purpose.Typically, such vibration dampers comprise a solid element, a so-called damper mass, which is connected to a typically elastic or viscoelastic damping element and is deformed by a vibration of the damper mass, leading to a dissipation of the kinetic energy of the vibration and thus to a damping of the vibration.
[0007] An example of such a vibration damper can be found in German patent application DE 102019219208 A1. This document discloses a vibration damper comprising a hollow sphere or spherical damping element. However, the solution known from this document is not optimized with regard to the required installation space and the directional dependence of the damping effect.
[0008] The object of the present invention is to provide a vibration damper that is improved compared to the prior art. A further object of the invention is to provide an improved decoupling arrangement for a semiconductor technology system and a corresponding system.
[0009] This problem is solved by a device having the features of independent claim 1. The dependent claims relate to advantageous further developments and variants of the invention.
[0010] A vibration damper according to the invention for a semiconductor technology system comprises at least one damper mass and at least one damping element connected to the damper mass, which is designed as an elastomer body.
[0011] The elastomer body is designed in such a way that it has different stiffnesses in at least two orthogonal spatial directions.
[0012] According to the invention, the different stiffnesses are achieved by the elastomer body having a plurality of recesses. In other words, the desired anisotropy of the elastomer body's stiffness is achieved by a suitable choice of its internal geometric structure.
[0013] Accordingly, the direction-dependent stiffnesses do not depend, or only to a small extent, on the external geometry of the elastomer body. This makes it possible to adapt the elastomer body to the available installation space requirements much better than previously known in the prior art. In particular, the external geometry of the elastomer body can first be designed to fit the available installation space.
[0014] The desired direction-dependent stiffnesses can then be adjusted by selecting the internal geometry, i.e., the recesses of the elastomer body, accordingly. As a result, it is possible to design a vibration damper with respect to its direction-dependent damping effect over a wide range without having to make compromises due to space constraints.
[0015] The outer geometry of the elastomer body can be cuboidal. In this case, integration into a larger system is usually particularly easy. The flat faces of a cuboid can then advantageously serve as mechanical interfaces to elements connected to the elastomer body, such as a damping compound or a damping element. Of course, other outer geometries, such as a trapezoidal cross-section, are also conceivable.
[0016] In a first embodiment of the invention, the elastomer body can be formed in one piece, for example as a cast or injection-molded body. The recesses can be created, in particular, by subtractive processes, such as milling or drilling. Alternatively, a suitable (injection) mold can be used. Advantageously, the elastomer body can also be manufactured by an additive process, such as 3D printing.
[0017] Alternatively, the elastomer body can also be composed of several sub-bodies. In this case, it is conceivable to first manufacture the appropriate sub-bodies, for example using one or more of the methods mentioned above, and then join them together, for example by gluing, fusing or welding.
[0018] In an advantageous embodiment of the invention, at least a portion of the recesses are channel-shaped and run parallel to each other. In this way, a desired directional selectivity of the frequency-dependent damping effect of the associated vibration damper can be achieved in a particularly simple manner.
[0019] Because the elastomer body is PFAS-free, the versatile applicability of the vibration damper according to the invention can be ensured for the future. The elastomer body can, in particular, contain one or more of the following materials: polynorbornene rubber (PNR), copolymers of ethene and vinyl acetate (EVM), hydrogenated NBR rubber (HNBR), butyl rubber and derivatives, chloroprene rubbers (CR), thermoplastic polymers (TPE), especially those based on polyurethane (TPU), and thermoplastic vulcanizates (TPV).
[0020] Another advantageous choice for the elastomer body material is fluoroelastomer (FKM) or perfluoroelastomer (FFKM). Because the vibration damper comprises two elastomer bodies connected to the damper mass, further degrees of freedom for a desired direction-dependent damping characteristic can be achieved, depending on the orientation of the elastomer bodies and their internal geometry.
[0021] In particular, the two elastomer bodies can be arranged on opposite sides of the damper mass; the damper mass can, for example, be designed as a plate-shaped element.
[0022] It is also conceivable, especially when using large damping masses, to use more than two, in particular four or even more elastomer bodies.
[0023] The arrangement on opposite sides reduces the generation of rotations due to eccentric behavior. Designing the damper mass as a plate-shaped element also improves its center of gravity position relative to the center, namely inwards, which in turn leads to lower parasitic rotational moments.
[0024] Furthermore, the center of mass of the vibration damper is also located closer to its center of stiffness. Overall, the described embodiment reduces the complexity of the design and construction of the damper mass. The solution according to the invention allows for independent modification of mass (damper mass) and damping behavior (geometry of the elastomer bodies).
[0025] In a further embodiment of the invention, the vibration damper according to the invention is used in a mechanical decoupling arrangement for a semiconductor technology system. Such a decoupling arrangement comprises a mass element and at least one first elastic element mechanically connected to the mass element. The first elastic element includes an interface for mechanical connection with a first component of the system.
[0026] Furthermore, the decoupling arrangement comprises at least one second elastic element mechanically connected to the mass element, wherein the second elastic element includes an interface for mechanical connection with a second component of the system.
[0027] The mass element is mechanically connected to at least one vibration damper according to one of the preceding claims. This allows direction-dependent damping properties to be adjusted over a wide range by appropriately designing the elastomer body.
[0028] In particular, the mass element can be connected to four vibration dampers, which are arranged in pairs on opposite faces of an imaginary cuboid, especially a cube. The use of more than four vibration dampers is also conceivable.
[0029] An inventive system for semiconductor technology, for example a mask inspection system, a wafer inspection system, a mask repair system, or a projection exposure system, can be improved with regard to its robustness against external disturbances by including a vibration damper or a mechanical decoupling arrangement according to one of the preceding claims. In particular, the mechanical decoupling arrangement can be connected to a first component of the system designed as a base frame and a second component of the system designed as a sensor frame.
[0030] Exemplary embodiments and variants of the invention are explained in more detail below with reference to the drawing. The drawing shows
[0031] Figure 1 schematically shows a projection exposure system for EUV projection lithography in meridional section.
[0032] Figure 2 schematically shows a projection exposure system for DUV projection lithography in meridional section.
[0033] Figure 3 shows a perspective view of a first embodiment of a mechanical decoupling arrangement according to the invention.
[0034] Figure 4 shows a sectional view of the arrangement shown in Figure 3, and
[0035] Figure 5 shows a detailed illustration of the invention.
[0036] The following section describes, with reference to Figure 1, the essential components of a projection exposure system 1 for microlithography. The description of the basic structure of the projection exposure system 1 and its components is not intended to be restrictive.
[0037] One embodiment of a lighting system 2 of the projection exposure system 1 has, in addition to a radiation source 3, a lighting optic 4 for illuminating an object field 5 in an object plane 6. In an alternative embodiment, the light source 3 can also be provided as a separate module from the rest of the lighting system. In this case, the lighting system does not include the light source 3.
[0038] A reticle 7 arranged in the object field 5 is illuminated. The reticle 7 is held by a reticle holder 8. The reticle holder 8 can be moved, particularly in a scanning direction, via a reticle displacement drive 9. Figure 1 shows a Cartesian xyz coordinate system for illustration. The x-direction runs perpendicular to the plane of the drawing. The y-direction runs horizontally, and the z-direction runs vertically. In Figure 1, the scanning direction runs along the y-direction. The z-direction runs perpendicular to the object plane 6. The projection exposure system 1 comprises a projection optic 10. The projection optic 10 serves to image the object field 5 onto an image field 11 in an image plane 12. The image plane 12 runs parallel to the object plane 6. Alternatively, an angle other than 0° between the object plane 6 and the image plane 12 is also possible.
[0039] A structure on the reticulum 7 is imaged onto a photosensitive layer of a wafer 13 located in the image plane 12 within the image field 11. The wafer 13 is held by a wafer holder 14. The wafer holder 14 can be moved, particularly along the y-direction, via a wafer transfer drive 15. The movement of the reticulum 7 via the reticulum transfer drive 9 and of the wafer 13 via the wafer transfer drive 15 can be synchronized.
[0040] Radiation source 3 is an EUV radiation source. Specifically, radiation source 3 emits EUV radiation 16, which is also referred to below as useful radiation, illumination radiation, or illumination light. The useful radiation has a wavelength in the range between 5 nm and 30 nm. Radiation source 3 can be a plasma source, for example, an LPP source (laser-produced plasma) or a DPP source (gas-discharged produced plasma). It can also be a synchrotron-based radiation source. Radiation source 3 can be a free-electron laser (FEL).
[0041] The illumination radiation 16 emanating from the radiation source 3 is focused by a collector 17. The collector 17 can be a collector with one or more ellipsoidal and / or hyperboloid reflective surfaces. The at least one reflective surface of the collector 17 can be illuminated with the illumination radiation 16 at grazing incidence (Gl), i.e., with angles of incidence greater than 45° relative to the normal direction of the mirror surface, or at normal incidence (NI), i.e., with angles of incidence less than 45°. The collector 17 can be structured and / or coated to optimize its reflectivity for the useful radiation and to suppress stray light.
[0042] After the collector 17, the illumination radiation 16 propagates through an intermediate focus in an intermediate focal plane 18. The intermediate focal plane 18 can represent a separation between a radiation source module, comprising the radiation source 3 and the collector 17, and the illumination optics 4.
[0043] The illumination optics 4 comprise a deflecting mirror 19 and, downstream in the beam path, a first faceted mirror 20. The deflecting mirror 19 can be a planar deflecting mirror or, alternatively, a mirror with an effect that influences the beam beyond the mere deflection effect. Alternatively or additionally, the deflecting mirror 19 can be designed as a spectral filter that separates a useful wavelength of the illumination radiation 16 from stray light of a different wavelength. If the first faceted mirror 20 is arranged in a plane of the illumination optics 4 that is optically conjugate to the object plane 6 as the field plane, it is also referred to as a field faceted mirror. The first faceted mirror 20 comprises a plurality of individual first facets 21, which are hereinafter also referred to as field facets. Only a few of these facets 21 are shown in Fig. 1 as examples.
[0044] The first facets 21 can be designed as macroscopic facets, in particular as rectangular facets or as facets with an arcuate or semicircular border contour. The first facets 21 can be designed as planar facets or alternatively as convexly or concavely curved facets.
[0045] As is known, for example, from DE 102008009600 A1, the first facets 21 themselves can each be composed of a plurality of individual mirrors, in particular a plurality of micromirrors. The first facet mirror 20 can in particular be designed as a microelectromechanical system (MEMS system). For details, reference is made to DE 102008009600 A1.
[0046] Between the collector 17 and the deflecting mirror 19, the illumination radiation 16 runs horizontally, i.e. along the y-direction.
[0047] In the beam path of the illumination optics 4, a second faceted mirror 22 is arranged downstream of the first faceted mirror 20. If the second faceted mirror 22 is arranged in a pupil plane of the illumination optics 4, it is also referred to as a pupil faceted mirror. The second faceted mirror 22 can also be arranged at a distance from a pupil plane of the illumination optics 4. In this case, the combination of the first faceted mirror 20 and the second faceted mirror 22 is also referred to as a specular reflector. Specular reflectors are known from US 2006 / 0132747 A1, EP 1 614008 B1, and US 6,573,978.
[0048] The second facet mirror 22 comprises a plurality of second facets 23. In the case of a pupil facet mirror, the second facets 23 are also referred to as pupil facets.
[0049] The second facets 23 can also be macroscopic facets, which may, for example, have round, rectangular, or hexagonal edges, or alternatively, facets composed of micromirrors. Reference is also made to DE 102008009600 A1 in this regard.
[0050] The second facets 23 can have planar or alternatively convex or concave curved reflective surfaces.
[0051] The illumination optics 4 thus form a double-faceted system. This basic principle is also known as a honeycomb condenser (fly's eye integrator). It can be advantageous not to arrange the second facet mirror 22 exactly in a plane that is optically conjugate to a pupil plane of the projection optics 10. In particular, the pupil facet mirror 22 can be tilted relative to a pupil plane of the projection optics 10, as described, for example, in DE 102017220586 A1. With the help of the second facet mirror 22, the individual first facets 21 are imaged into the object field 5. The second facet mirror 22 is the last beam-shaping, or indeed the last, mirror for the illumination radiation 16 in the beam path before the object field 5.
[0052] In another embodiment of the illumination optics 4, not shown, a transmission optic can be arranged in the beam path between the second facet mirror 22 and the object field 5, which contributes in particular to imaging the first facets 21 into the object field 5. The transmission optic can have exactly one mirror, or alternatively two or more mirrors, which are arranged one behind the other in the beam path of the illumination optics 4. The transmission optic can in particular comprise one or two mirrors for normal incidence (Nl mirrors, normal incidence mirrors) and / or one or two mirrors for grazing incidence (Gl mirrors, grazing incidence mirrors).
[0053] In the embodiment shown in Fig. 1, the lighting optics 4 has exactly three mirrors after the collector 17, namely the deflecting mirror 19, the field facet mirror 20 and the pupil facet mirror 22.
[0054] In a further embodiment of the lighting optics 4, the deflecting mirror 19 can also be omitted, so that the lighting optics 4 after the collector 17 can then have exactly two mirrors, namely the first faceted mirror 20 and the second faceted mirror 22.
[0055] The mapping of the first facets 21 by means of the second facets 23 or with the second facets 23 and a transmission optic into the object plane 6 is regularly only an approximate mapping.
[0056] The projection optics 10 comprise a plurality of mirrors Mi, which are numbered according to their arrangement in the beam path of the projection exposure system 1.
[0057] In the example shown in Figure 1, the projection optics 10 comprises six mirrors M1 to M6. Alternatives with four, eight, ten, twelve, or any other number of mirrors Mi are also possible. The penultimate mirror M5 and the last mirror M6 each have an aperture for the illumination radiation 16. The projection optics 10 is a double-obscured optic. The projection optics 10 has an image-side numerical aperture greater than 0.5, and which can also be greater than 0.6, for example, 0.7 or 0.75.
[0058] The reflective surfaces of the mirrors Mi can be designed as freeform surfaces without an axis of rotational symmetry. Alternatively, the reflective surfaces of the mirrors Mi can be designed as aspherical surfaces with exactly one axis of rotational symmetry of the reflective surface shape. The mirrors Mi, like the mirrors of the illumination optics 4, can have highly reflective coatings for the illumination radiation 16. These coatings can be designed as multilayer coatings, in particular with alternating layers of molybdenum and silicon.
[0059] The projection optics 10 has a large object-image offset in the y-direction between a y-coordinate of a center of the object field 5 and a y-coordinate of the center of the image field 11. This object-image offset in the y-direction can be approximately as large as a z-distance between the object plane 6 and the image plane 12.
[0060] The projection optics 10 can be anamorphic. In particular, they have different image scales βx, βy in the x and y directions. The two image scales βx, βy of the projection optics 10 are preferably (βx, βy) = (+ / - 0.25, + / - 0.125). A positive image scale β indicates an image without image inversion. A negative value for the image scale β indicates an image with image inversion.
[0061] The projection optics 10 thus lead to a reduction in the x-direction, that is, in the direction perpendicular to the scan direction, in a ratio of 4:1.
[0062] The projection optics 10 lead to a reduction of 8:1 in the y-direction, that is, in the scan direction.
[0063] Other magnification ratios are also possible. Magnification ratios with the same sign and absolute values in the x and y directions, for example with absolute values of 0.125 or 0.25, are also possible. The number of intermediate image planes in the x and y directions in the beam path between the object field 5 and the image field 11 can be the same or, depending on the design of the projection optics 10, can be different. Examples of projection optics with different numbers of such intermediate images in the x and y directions are known from US 2018 / 0074303 A1.
[0064] Each pupil facet 23 is assigned to exactly one of the field facets 21 to form an illumination channel for illuminating the object field 5. This can result, in particular, in illumination according to Köhler's principle. The far field is divided into a multitude of object fields 5 by means of the field facets 21. The field facets 21 generate a plurality of images of the intermediate focus on the pupil facets 23 assigned to each of them.
[0065] The field facets 21 are each superimposed on the reticulum 7 by an associated pupil facet 23 to illuminate the object field 5. The illumination of the object field 5 is particularly homogeneous. It preferably exhibits a uniformity error of less than 2%. Field uniformity can be achieved by superimposing different illumination channels.
[0066] The illumination of the entrance pupil of the projection optics 10 can be geometrically defined by the arrangement of the pupil facets. By selecting the illumination channels, in particular the subset of pupil facets that guide light, the intensity distribution in the entrance pupil of the projection optics 10 can be adjusted. This intensity distribution is also referred to as the illumination setting.
[0067] Another preferred pupil uniformity in the area of defined illuminated sections of an illumination pupil of the illumination optics 4 can be achieved by a redistribution of the illumination channels.
[0068] Further aspects and details of the illumination of the object field 5 and, in particular, the entrance pupil of the projection optics 10 are described below.
[0069] The projection optics 10 can, in particular, have a homocentric entrance pupil. This pupil can be accessible or inaccessible. The entrance pupil of the projection optics 10 cannot usually be illuminated exactly by the pupil facet mirror 22. When the projection optics 10 image the center of the pupil facet mirror 22 telecentrically onto the wafer 13, the aperture rays often do not intersect at a single point. However, a surface can be found where the pairwise determined separation of the aperture rays is minimized. This surface represents the entrance pupil or a surface conjugate to it in real space. In particular, this surface exhibits a finite curvature.
[0070] The projection optics 10 may have different entrance pupil positions for the tangential and sagittal beam paths. In this case, an imaging element, in particular an optical component of the transmission optics, should be provided between the second faceted mirror 22 and the reticle 7. This optical element allows the different positions of the tangential and sagittal entrance pupils to be taken into account. In the arrangement of the components of the illumination optics 4 shown in Figure 1, the pupil faceted mirror 22 is arranged in a plane conjugate to the entrance pupil of the projection optics 10. The field faceted mirror 20 is tilted relative to the object plane 6. The first faceted mirror 20 is tilted relative to an arrangement plane defined by the deflecting mirror 19.
[0071] The first faceted mirror 20 is arranged at an angle to an arrangement plane defined by the second faceted mirror 22.
[0072] Figure 2 schematically shows in meridional section another projection exposure system 101 for DUV projection lithography, in which the invention can also be applied.
[0073] The construction of the projection exposure system 101 and the principle of its operation are comparable to the construction and procedure described in Figure 1. Identical components are designated with a reference numeral increased by 100 compared to Figure 1; thus, the reference numerals in Figure 2 begin with 101. In contrast to an EUV projection exposure system 1 as described in Figure 1, due to the longer wavelength of the DUV radiation 116 used as useful light in the range of 100 nm to 300 nm, particularly 193 nm, refractive, diffractive, and / or reflective optical elements 117, such as lenses, mirrors, prisms, end plates, and the like, can be used for imaging or illumination in the DUV projection exposure system 101.The projection exposure system 101 essentially comprises a lighting system 102, a reticule holder 108 for receiving and precisely positioning a reticule 107 provided with a structure, by which the subsequent structures on a wafer 113 are determined, a wafer holder 114 for holding, moving and precisely positioning this wafer 113 and a projection lens 110, with several optical elements 117, which are held in a lens housing 119 of the projection lens 110 via mounts 118.
[0074] The illumination system 102 provides DUV radiation 116 required for imaging the reticulum 107 on the wafer 113. A laser, a plasma source, or the like can be used as the source for this radiation 116. In the illumination system 102, the radiation 116 is shaped by optical elements such that, upon striking the reticulum 107, the DUV radiation 116 exhibits the desired properties with respect to diameter, polarization, wavefront shape, and the like.
[0075] The construction of the following projection optics 101 with the lens housing 119 differs in principle from the construction described in Figure 1, except for the additional use of refractive optical elements 117 such as lenses, prisms, end plates, and is therefore not described further.
[0076] Figure 3 shows a perspective view of a first embodiment of a mechanical decoupling arrangement 30 according to the invention. The mechanical decoupling arrangement 30 has a first and a second interface 31 and 32 for mechanical connection with surrounding components. These surrounding components can be, for example, a sensor frame and a base frame of a projection exposure system for semiconductor lithography 1 and 101, respectively, as shown in Figures 1 and 2.
[0077] In the example shown in the figure, the mechanical decoupling arrangement 30 comprises a mass element 33 having an approximately cube-shaped outer geometry. The interfaces 31 and 32 mentioned previously are located on the top and bottom surfaces of the imaginary cube in the example shown. Four vibration dampers 34 are arranged on the side faces of the cube, two of which are visible in the figure.
[0078] The vibration dampers 34 each comprise a damping mass 35, which is mechanically connected to the mass element 33 via two damping elements 36, designed as elastomer bodies in the present example, thus enabling relative movement of the damping mass 35 with respect to the mass element 33, resulting in deformation of the elastomer bodies 36. In this way, the desired damping effect of the arrangement according to the invention is achieved. In the example shown, the two elastomer bodies 36 are arranged on opposite sides of the plate-shaped damping mass 35.
[0079] The mechanical connection between the elastomer body 36 and the damper mass 35 or the mass element 33 is formed by two connecting plates 37 and 33, respectively.
[0080] 38 ensures this. The connection plate 37 is screwed to the damping mass 35, whereas the connection plate 38 is screwed to the mass element 33. Of course, other connection types such as clamps, material connections, or positive-locking connections are also conceivable.
[0081] Figure 4 shows a side-parallel vertical section of the arrangement shown in Figure 3. Clearly visible in the figure is the mass element 33, which, as a relatively complex body, is geometrically optimized to accommodate two elastic elements 40 and 41 as well as the vibration dampers 34. The two elastic elements 40 and 41 are each mechanically connected at their end sections to the first interface 31 and the second interface 32, respectively, and are connected centrally to the mass element 33, for example, by screws (not shown in the figure). The elastic elements 40 and 41 can be solid bodies, for example, manufactured by milling or electrical discharge machining (EDM), particularly from stainless steel. As a simplified alternative, prefabricated coil springs, leaf springs, or combinations of different types can also be used for spring action.
[0082] Figure 5 shows a detailed view of the elastomer body 36 and the connecting plates 37 and 38 connected to it.
[0083] The connecting plates 37 and 38 can, for example, be materially bonded to the elastomer body 36, which is easily achievable due to its simple geometry. Of course, other joining methods are also conceivable.
[0084] The trough-shaped recesses 39, which run parallel to each other, are clearly visible in the figure. In the example shown, the elastomer body 36 thus exhibits noticeably different stiffnesses in the spatial directions x, y, and z, which are also shown in the figure. It is immediately apparent that during relative movement between the elastomer body 36 and the mass element 33 in the x-direction, the elastomer body 36 exhibits the lowest stiffness with respect to the associated shear. The elastomer body 36 also exhibits different stiffnesses for deformations in the y- and z-directions.
[0085] This makes it possible, on the one hand, by a suitable design of the elastomer body 36, and on the other hand, by a corresponding arrangement of the elastomer bodies 36 in the decoupling arrangement 30, to set a desired directional sensitivity of the frequency-dependent damping. Reference numeral list
[0086] 1 Projection exposure system 2 Lighting system
[0087] 3. Radiation source
[0088] 4 Lighting optics
[0089] 5 object field
[0090] 6 Object level
[0091] 7 reticles
[0092] 8 label holders
[0093] 9 Reticle displacement drive 10 Projection optics
[0094] 11 Image field
[0095] 12 Image plane
[0096] 13 wafers
[0097] 14 wafer holders
[0098] 15 Wafer transfer drive 16 EUV radiation
[0099] 17 Collector
[0100] 18 Intermediate focus plane
[0101] 19 deflecting mirrors
[0102] 20 faceted mirrors
[0103] 21 facets
[0104] 22 faceted mirrors
[0105] 23 facets
[0106] 30 Decoupling arrangement 31 Interface
[0107] 32 interface
[0108] 33 Mass element
[0109] 34 Vibration damper 5 Damper mass
[0110] 6 elastomer bodies
[0111] 7 Connection plate
[0112] 8 Connection plate
[0113] 9 Exclusion
[0114] 0.41 Elastic element
[0115] 101 Projection exposure system 102 Lighting system
[0116] 107 reticles
[0117] 108 label holders
[0118] 110 Projection optics
[0119] 113 wafers
[0120] 114 wafer holders
[0121] 116 DUV radiation
[0122] 117 optical element
[0123] 118 versions
[0124] 119 lens bodies
[0125] M1-M6 mirrors
Claims
Patent claims 1. Vibration damper (34) for a semiconductor technology system (1,101), comprising - at least one retarder mass (35) - at least one damping element (36) connected to the damping mass (35) - wherein the damping element (36) is designed as an elastomeric body - and wherein the elastomeric body (36) is designed such that it has different stiffnesses in at least two orthogonal spatial directions characterized by the fact that The different stiffnesses are achieved by the fact that the elastomer body (36) has a plurality of recesses (39).
2. Vibration damper (34) according to one of the preceding claims, characterized in that the elastomer body (36) has a cuboid outer geometry.
3. Vibration damper (34) according to claim 1 or 2, characterized by the fact that the elastomer body (36) is formed in one piece.
4. Vibration damper (34) according to claim 1 or 2, characterized by the fact that the elastomer body (36) is composed of several sub-bodies.
5. Vibration damper (34) according to one of the preceding claims, characterized in that at least part of the recesses (39) is channel-shaped and runs parallel to each other.
6. Vibration damper (34) according to one of the preceding claims, characterized in that the elastomer body (36) is PFAS-free, in particular containing one or more of the following substances: polynorbornene rubber (PNR), copolymers of ethene and vinyl acetate (EVM), hydrogenated NBR rubber (HNBR), butyl rubber and derivatives, chloroprene rubbers (CR), thermoplastic polymers (TPE), in particular based on polyurethane (TPU), thermoplastic vulcanizates (TPV).
7. Vibration damper (34) according to one of the preceding claims 1-5, characterized in that the elastomer body (36) contains a fluorocarbon rubber (FKM) or a perfluorocarbon rubber (FFKM).
8. Vibration damper (34) according to one of the preceding claims, characterized in that the vibration damper (34) comprises two elastomer bodies (36) connected to the damper mass (35).
9. Vibration damper (34) according to claim 8, characterized by the fact that the two elastomer bodies (36) are arranged on opposite sides of the damper mass (35).
10. Vibration damper (34) according to one of the preceding claims, characterized in that the damping mass (35) is designed as a plate-shaped element.
11. Mechanical decoupling arrangement (30) for a semiconductor technology system (1,101), comprising - a mass element (33) - at least one first elastic element (41) mechanically connected to the mass element (33), wherein the first elastic element (41) comprises a first interface (31) for mechanical connection with a first component of the system (1,101) - - at least one second elastic element (42) mechanically connected to the mass element (33), wherein the second elastic element (42) comprises a second interface (32) for mechanical connection with a second component of the system (1,101) characterized by the fact that the mass element (33) is mechanically connected to at least one vibration damper (34) according to one of the preceding claims.
12. Mechanical decoupling arrangement (30) according to claim 11, characterized by the fact that the mass element (33) is connected to four vibration dampers (34), which are arranged in pairs on opposite sides of an imaginary cuboid.
13. Mechanical decoupling arrangement (30) according to claim 12, characterized by the fact that The imagined cuboid is actually a cube.
14. Semiconductor technology plant (1,101), characterized by the fact that it comprises a vibration damper (34) or a mechanical decoupling arrangement (30) according to one of the preceding claims.
15. Annex (1,101) according to claim 14, characterized by the fact that the mechanical decoupling arrangement (30) is connected to a first component of the system (1,101) designed as a base frame and a second component of the system (1,101) designed as a sensor frame.
16. Annex (1,101) according to claim 14 or 15, characterized by that the system (1,101) is a mask inspection system, a wafer inspection system, a mask repair system or a projection exposure system.