Laminated substrate, wiring board, method for manufacturing laminated substrate, method for manufacturing wiring board, and semiconductor package

Abstract

Provided are a laminated substrate, a wiring board, a method for manufacturing the laminated substrate, a method for manufacturing the wiring board, and a semiconductor package, wherein it is possible to reduce the occurrence of cracks. According to one embodiment, a laminated substrate (100) includes a plurality of wiring boards (110) each having: an inorganic substrate (10) containing glass; one or more insulating resin layers (2) arranged so as to cover at least a part of the inorganic substrate (10) containing glass; and a wiring part (3) arranged on the surface of at least one of the inorganic substrate (10) containing glass and the insulating resin layer (2). At least one of a first surface of the inorganic substrate (10) containing glass and a second surface opposite to the first surface is chemically strengthened.

Description

Multilayer substrate, wiring substrate, method for manufacturing a multilayer substrate, method for manufacturing a wiring substrate, and semiconductor package

[0001] This disclosure relates to a multilayer substrate, a wiring substrate, a method for manufacturing a multilayer substrate, a method for manufacturing a wiring substrate, and a semiconductor package.

[0002] In recent years, interposers using glass or glass ceramics as the substrate for printed circuit boards have been developed as a method for increasing the density of semiconductor devices. In a typical interposer manufacturing process, via holes are formed through an inorganic substrate containing glass, and plating layers are formed inside the via holes and on both sides of the substrate to form through electrodes and wiring. Subsequently, insulating resin layers, vias for interlayer connection, and wiring layers are formed on both sides of the inorganic substrate, and the lamination process is repeated until the desired number of wiring layers are reached. Through vias enable high-density mounting (see, for example, Patent Document 1). Furthermore, substrates with vias formed on them may be used as substrates for passive elements or probe cards.

[0003] Patent No. 5798155

[0004] Inorganic substrates containing glass can be used as substrate materials for through-holes in semiconductor devices. However, such inorganic substrates for through-holes in semiconductor devices may have problems such as cracks and fissures easily occurring at the outer periphery of the opening of through-holes on the surface of the inorganic substrate (i.e., at the interface between the through-hole and the non-opening).

[0005] One embodiment of this disclosure aims to provide a laminated substrate, a wiring substrate, a method for manufacturing a laminated substrate, a method for manufacturing a wiring substrate, and a semiconductor package that can reduce the occurrence of cracks in an inorganic substrate including glass.

[0006] A laminated substrate according to one embodiment of the present disclosure is a laminated substrate having a plurality of wiring substrates, each having an inorganic substrate containing glass, one or more insulating resin layers arranged to cover at least a portion of the inorganic substrate containing glass, and wiring portions arranged on at least one surface of the inorganic substrate containing glass and the insulating resin layers, wherein at least one of the first surface and the second surface opposite the first surface of the inorganic substrate containing glass is chemically strengthened.

[0007] According to one embodiment of this disclosure, it is possible to provide a laminated substrate, a wiring substrate, a method for manufacturing a laminated substrate, a method for manufacturing a wiring substrate, and a semiconductor package that can reduce the occurrence of cracks in an inorganic substrate including glass.

[0008] Figure 1 is a cross-sectional view showing an example of a laminated substrate according to the first embodiment. Figure 2 is a cross-sectional view showing an example of a laminated substrate according to the first embodiment. Figure 3 is a plan view showing an example of a laminated substrate according to the first embodiment. Figure 4 is a cross-sectional view showing an example of a laminated substrate according to the second embodiment. Figure 5 is a cross-sectional view showing an example of a laminated substrate according to the second embodiment. Figure 6 is a cross-sectional view showing an example of a wiring board according to the first embodiment. Figure 7 is a cross-sectional view showing an example of a wiring board according to the first embodiment. Figure 8 is a cross-sectional view showing an example of a wiring board according to the second embodiment. Figure 9 is a cross-sectional view showing an example of a wiring board according to the second embodiment. Figure 10 is a diagram illustrating the procedure for measuring the peel strength of an inorganic substrate containing glass and an insulating resin layer. Figure 11 is a flowchart showing an example of a method for manufacturing a laminated substrate according to the first embodiment. Figure 12 is a flowchart showing an example of a method for forming a laminated portion in the method for manufacturing a laminated substrate according to the first embodiment. Figure 13 is a flowchart showing an example of a method for forming a laminated portion in the method for manufacturing a laminated substrate according to the first embodiment. Figure 14 is a flowchart showing an example of a method for manufacturing a wiring board according to the first embodiment.

[0009] The embodiments for implementing this disclosure will be described below with reference to the drawings. In each drawing, identical or similar components will be denoted by the same reference numeral, and their descriptions may be omitted. In the specification, the "~" indicating a numerical range means that the numbers before and after it are included as the lower and upper limits. Numerical ranges include rounded ranges. Some reference numerals may be omitted to avoid making the drawings cluttered. Also, hatching may be omitted to avoid making the drawings cluttered.

[0010] (Laminated Substrate) The laminated substrate of this embodiment is a laminated substrate having a plurality of wiring substrates, each having an inorganic substrate containing glass, one or more insulating resin layers arranged to cover at least a portion of the inorganic substrate containing glass, and wiring portions arranged on at least one surface of the inorganic substrate containing glass and the insulating resin layers. The laminated substrate further includes other members such as a cover layer as necessary.

[0011] At least one of the first surface and the second surface opposite the first surface of the inorganic substrate containing the glass is chemically strengthened. At least one of the first surface and the second surface of the inorganic substrate containing the glass may include an exposed portion. The thickness of the chemically strengthened layer in the exposed portion may differ from the thickness of the chemically strengthened layer in the insulating resin layer or the portion where the wiring is located. The thickness of the chemically strengthened layer in the exposed portion may be less than or greater than the thickness of the chemically strengthened layer in the insulating resin layer or the portion where the wiring is located.

[0012] (Wiring board) The wiring board of this embodiment is a wiring board having an inorganic substrate containing glass, one or more insulating resin layers arranged to cover at least a part of the inorganic substrate containing glass, and wiring portions arranged on at least one surface of the inorganic substrate containing glass and the insulating resin layer. The wiring board is a wiring board made by forming individual pieces of the laminated substrate, and further includes other members such as a cover layer as necessary.

[0013] At least one of the first surface and the second surface opposite the first surface of the inorganic substrate containing the glass is chemically strengthened. At least one of the first surface and the second surface may include an exposed portion. The thickness of the chemically strengthened layer in the exposed portion is different from the thickness of the chemically strengthened layer in the insulating resin layer or the portion where the wiring is located. The thickness of the chemically strengthened layer in the exposed portion may be less than or greater than the thickness of the chemically strengthened layer in the insulating resin layer or the portion where the wiring is located.

[0014] When manufacturing laminated substrates such as glass interposers, stress may be generated inside the inorganic substrate containing glass due to the difference in thermal expansion coefficients between the inorganic substrate containing glass and the insulating resin layer and wiring. If chipping occurs in the insulating resin layer during subsequent dicing, mechanical fracture such as dicing may cause cracks, such as microcracks, to originate within the insulating resin layer, between insulating resin layers, or at the interface between the insulating resin layer and the inorganic substrate containing glass. These cracks may then propagate to the insulating resin layer, wiring, and the inorganic substrate containing glass. Even if cracks do not occur during dicing, cracks may be generated for the first time in the individual wiring substrates after dicing, under conditions such as thermal cycling or high temperature and humidity, originating within the insulating resin layer, between insulating resin layers, or at the interface between the insulating resin layer and the inorganic substrate containing glass, and these cracks may propagate to the inorganic substrate containing glass.

[0015] As a result of diligent research to solve the above-mentioned problems and issues, the present inventors have found that in a laminated substrate having a plurality of wiring boards, each having an inorganic substrate containing glass, one or more insulating resin layers arranged to cover at least a part of the inorganic substrate containing glass, and wiring portions arranged on at least one of the surfaces of the inorganic substrate containing glass and the insulating resin layer, stress is relieved by chemically strengthening at least one of the first and second surfaces of the inorganic substrate containing glass. Furthermore, the present inventors have found that the occurrence of cracks can be reduced in the inorganic substrate containing glass.

[0016] Referring to Figure 1, a laminated substrate 100 according to one embodiment will be described. As shown in Figure 1, the laminated substrate 100 has one insulating resin layer 2 on a first surface and a second surface in the thickness direction of an inorganic substrate 10 containing glass. The second surface is the surface opposite to the first surface. The first surface and the second surface are the main surfaces of the inorganic substrate 10 containing glass. The laminated substrate 100 has an inorganic substrate 10 containing glass, an insulating resin layer 2, a wiring section 3, and a connection terminal 4. The insulating resin layer 2, the wiring section 3, and the connection terminal 4 are called the laminated section 6. Then, the laminated section 6 is arranged on at least one of the first surface and the second surface of the inorganic substrate 10 containing glass. The insulating resin layer 2 includes an insulating resin layer 21 and an insulating resin layer 22.

[0017] The inorganic substrate 10 containing glass has a first surface and a second surface. Here, for the convenience of describing each component in this specification, an XYZ Cartesian coordinate system is introduced. The direction perpendicular to the first surface is defined as the Z-axis direction, and the surfaces parallel to the first surface are defined as the XY planes. The first surface is the surface on the +Z-axis side, and the second surface is the surface on the -Z-axis side.

[0018] The insulating resin layer 21 in the insulating resin layer 2 is arranged to cover at least a portion of the first surface of the inorganic substrate 10 containing glass. The insulating resin layer 22 in the insulating resin layer 2 is arranged to cover at least a portion of the second surface of the inorganic substrate 10 containing glass. The wiring portion 3 is arranged on at least one surface of the inorganic substrate 10 containing glass and the insulating resin layer 2. For example, the wiring portion 3 may include a portion arranged on the inorganic substrate 10 containing glass, a portion arranged on the insulating resin layer 2, and a portion embedded in the insulating resin layer 2. The connection terminal 4 is a terminal for electrically connecting to an external semiconductor chip or substrate.

[0019] At least one of the first and second surfaces of the inorganic substrate 10 containing glass is chemically strengthened. The chemically strengthened surface layer is called the chemically strengthened layer 7. In the figure, the chemically strengthened layer 7 is formed on both the first and second surfaces. The chemically strengthened layer 7 may also be formed on only the first surface or only the second surface.

[0020] Referring to Figure 2, a laminated substrate 101 according to one embodiment will be described. As shown in Figure 2, in the laminated substrate 101, at least one of the first and second surfaces of the inorganic substrate 10 containing glass is chemically strengthened. At least one of the first and second surfaces of the inorganic substrate 10 containing glass may include exposed portions 5. As shown in Figure 2, the first and second surfaces of the inorganic substrate 10 containing glass may each include exposed portions 5. Note that the exposed portions 5 may be formed on only one of the first and second surfaces. The exposed portions 5 expose at least one of the first and second surfaces of the inorganic substrate 10 containing glass. The exposed portions 5 expose at least one of the first and second surfaces from the insulating resin layer 2 and the wiring portion 3. As shown in Figure 3, the exposed portions 5 may be formed in a grid pattern in a plan view.

[0021] When the exposed portion 5 is formed on the first surface and the second surface, the position of the exposed portion 5 on the first surface and the position of the exposed portion 5 on the second surface overlap in a plan view. However, the positions of the exposed portion 5 on the first surface and the position of the exposed portion 5 on the second surface may include portions that do not overlap.

[0022] The exposed portion 5 is located between the laminated portions 6. The end face 6e of the laminated portion 6 on the exposed portion 5 side may include the end face 2e of the insulating resin layer 2. The end face 6e of the laminated portion 6 on the exposed portion 5 side may also include the end face 3e of the wiring portion 3. For example, at the end face 6e of the laminated portion 6, the end face 3e of the wiring portion 3 may be located closer to the inorganic substrate 10 containing glass than the end face 2e of the insulating resin layer 2. Note that the end face 6e of the laminated portion 6 on the exposed portion 5 side may include portions that do not include the end face 3e of the wiring portion 3, and may also include portions that do not include the end face 2e of the insulating resin layer 2.

[0023] The end face 6e of the laminated portion 6 may be perpendicular to the plane parallel to the exposed portion 5, or it may be inclined to the plane parallel to the exposed portion 5. The connection between the end face 6e of the laminated portion 6 and the upper surface of the laminated portion 6 may be chamfered.

[0024] Multiple wiring boards are formed by separating the laminated substrates 100 and 101 into individual pieces. Therefore, the laminated substrates 100 and 101 have multiple wiring boards. The laminated substrate 101 may be separated into individual pieces by dicing along the exposed portion 5.

[0025] Referring to Figure 4, a laminated substrate 200 according to one embodiment will be described. As shown in Figure 4, the laminated substrate 200 has two or more insulating resin layers 2 on the first and second surfaces in the thickness direction of an inorganic substrate 10 containing glass. The laminated substrate 200 has an inorganic substrate 10 containing glass, insulating resin layers 2, wiring sections 3 and connection terminals 4. In the laminated substrate 200, as in the laminated substrate 100, the insulating resin layers 2, wiring sections 3 and connection terminals 4 are referred to as the laminated section 6. The laminated section 6 is arranged on at least one of the first and second surfaces of the inorganic substrate 10 containing glass. The insulating resin layers 2 include insulating resin layers 211, 212, 221 and 222.

[0026] The insulating resin layers 211 and 212 in the insulating resin layer 2 are arranged to cover at least a portion of the first surface of the inorganic substrate 10 containing glass. The insulating resin layers 221 and 222 in the insulating resin layer 2 are arranged to cover at least a portion of the second surface of the inorganic substrate 10 containing glass. The wiring portion 3 is arranged on at least one surface of the inorganic substrate 10 containing glass and the insulating resin layer 2. The wiring portion 3 may include a portion arranged on the inorganic substrate 10 containing glass, a portion arranged on the insulating resin layer 2, and a portion embedded in the insulating resin layer 2. The connection terminal 4 is a terminal for electrically connecting to an external semiconductor chip or substrate.

[0027] At least one of the first and second surfaces of the inorganic substrate 10 containing glass has a chemically strengthened layer 7. In the figure, the chemically strengthened layer 7 is formed on both the first and second surfaces. The chemically strengthened layer 7 may be formed on only the first surface or only the second surface.

[0028] Referring to Figure 5, a laminated substrate 201 according to one embodiment will be described. As shown in Figure 5, in the laminated substrate 201, at least one of the first and second surfaces of the inorganic substrate 10 containing glass has a chemically strengthened layer 7. In addition, at least one of the first and second surfaces of the inorganic substrate 10 containing glass includes an exposed portion 5. As shown in Figure 5, the first and second surfaces of the inorganic substrate 10 containing glass may each include an exposed portion 5. Note that the exposed portion 5 may be formed on only one of the first and second surfaces. The shape and positional relationship of the exposed portion 5 in plan view, and the configuration of the end face 6e of the laminated portion 6 are the same as those of the laminated substrate 101 described above.

[0029] A wiring board according to one embodiment will be described with reference to Figures 6 to 9. The wiring board 110 shown in Figure 6 is a wiring board obtained by dicing the laminated substrate 100 shown in Figure 1. The wiring board 120 shown in Figure 7 is a wiring board obtained by dicing the laminated substrate 101 shown in Figure 2. The wiring board 210 shown in Figure 8 is a wiring board obtained by dicing the laminated substrate 200 shown in Figure 4. The wiring board 220 shown in Figure 9 is a wiring board obtained by dicing the laminated substrate 201 shown in Figure 5. Dividing may be performed by dicing the laminated substrates 100 and 200 in a region that has an inorganic substrate 10 containing glass and an insulating resin layer 2 when viewed from above, but does not have wiring sections 3 and connection terminals 4.

[0030] Furthermore, if the laminated substrates 101 and 201 have exposed portions 5, the individualization can be performed by dicing the exposed portions 5 located on at least one of the first and second surfaces when the laminated substrates 101 and 201 are viewed from above. Individual wiring boards 110, 120, 210, and 220 can be obtained by individualization. Even if the exposed portions 5 are on only one of the first and second surfaces, individualization is performed by dicing the exposed portions 5. In that case, it is preferable that the portion opposite to the exposed portion 5 is a region having an inorganic substrate 10 including glass and an insulating resin layer 2, and is a region without wiring portions 3 and connection terminals 4.

[0031] Of the wiring boards 110, 120, 210, and 220, the wiring board 110 may be used as an example for explanation. Unless otherwise specified, the matters described for wiring board 110 also apply to the other wiring boards 120, 210, and 220. Of the laminated substrates 100, 101, 200, and 201, the laminated substrate 100 may be used as an example for explanation. Unless otherwise specified, the matters described for laminated substrate 100 also apply to the other laminated substrates 101, 200, and 201. The wiring board 110, which is a piece made from the laminated substrate 100, also has an inorganic substrate 10 containing glass and a laminated portion 6. The laminated portion 6 is arranged on at least one of the first and second surfaces of the inorganic substrate 10 containing glass.

[0032] In the wiring boards 120 and 220, the exposed portion 5 is located at at least one end of the first and second surfaces of the inorganic substrate 10 containing glass in the wiring boards 120 and 220. In the wiring boards 120 and 220, the first and second surfaces may include the exposed portion 5. On the other hand, the first surface may include the exposed portion 5, and the second surface opposite the exposed portion 5 may be covered by the laminated portion 6. The end face 6e of the laminated portion 6 on the exposed portion 5 side may include the end face 3e of the wiring portion 3. The end face 10e of the inorganic substrate 10 containing glass may be etched.

[0033] The configurations of the laminated substrate 100 and the wiring substrate 110 will be described below.

[0034] <Inorganic Substrate Containing Glass> The inorganic substrate 10 containing glass has a first surface and a second surface as its main surfaces. The inorganic substrate 10 containing glass mainly consists of a material (hereinafter also referred to as "inorganic material containing glass") whose coefficient of thermal expansion at 0°C to 400°C is 0.1 ppm / K or more and 12 ppm / K or less. Here, "main component" means a component that is contained in an amount of 90% by mass or more.

[0035] Examples of inorganic materials containing glass include alkali glass, crystallized glass, borosilicate glass, and other types of glass, as well as ceramics such as glass ceramics and alumina ceramics. In this embodiment, since a chemically strengthened layer 7 is formed on an inorganic substrate 10 containing glass, it is preferable that the material does not contain quartz glass or alkali-free glass.

[0036] The average thickness of the inorganic substrate 10 containing glass may be in the range of 10 µm (0.01 mm) to 5000 µm (5 mm). The average thickness of the inorganic substrate 10 containing glass is preferably 100 µm or more, more preferably 200 µm or more. Further, the average thickness of the inorganic substrate 10 containing glass is preferably 2000 µm or less, more preferably 1500 µm or less, and still more preferably 1100 µm or less. When the average thickness is 100 µm or more, sufficient strength of the inorganic substrate 10 containing glass can be obtained. When the average thickness is 2000 µm or less, it is necessary to reduce the stress acting on the inorganic substrate 10 containing glass. The laminated substrate 100 and the wiring substrate 110 of the present embodiment can sufficiently obtain the stress reduction effect. The average thickness is obtained by measuring the thickness at 10 or more arbitrary points and calculating the average value thereof.

[0037] As shown in FIGS. 1 to 2 and FIGS. 4 to 5, the inorganic substrate 10 containing glass is provided with one or more through holes penetrating the inorganic substrate 10 containing glass in the thickness direction. The inside of the through hole is filled with a conductor. Thereby, the wiring portion 3 electrically connects the first surface and the second surface of the inorganic substrate 10 containing glass. Further, in the wiring substrate 110 shown in FIGS. 6 to 9, the inorganic substrate 10 containing glass has an end face 10e. The end face 10e of the inorganic substrate 10 containing glass corresponds to a cut surface obtained when the laminated substrate 100 is singulated to manufacture the wiring substrate 110.

[0038] [Chemically Strengthened Layer] The inorganic substrate 10 containing glass may include a chemically strengthened layer 7. The chemically strengthened layer 7 includes a layer whose strength is improved by changing the composition of the surface layer of the inorganic substrate 10 containing glass through a chemical strengthening treatment. Specifically, the chemical strengthening treatment refers to a treatment in which, on the surface of the inorganic substrate 10 containing glass, alkali metals or alkaline earth metals constituting the surface of the inorganic substrate 10 containing glass are ion-exchanged with another alkali metal or alkaline earth metal having a larger atomic number, thereby imparting compressive stress to the surface of the inorganic substrate 10 containing glass.

[0039] The thickness of the chemically strengthened layer 7 is, for example, in the range of 1 µm to 30 µm, preferably in the range of 5 µm to 25 µm. Note that the thickness of the chemically strengthened layer 7 is not limited to these thicknesses. In a conventional chemical strengthening treatment, it is required to deepen the chemically strengthened layer 7 in order to impart large surface compressive stress. However, in the inorganic substrate 10 including thin glass having a plurality of through-holes formed therein, when the chemical strengthening treatment is performed to a great depth, the entire glass undergoes ion exchange. In this case, the surface compressive stress does not increase. For this reason, it is preferable that the chemically strengthened layer 7 is not too deep.

[0040] In addition, when the chemically strengthened layer 7 becomes too thick, the internal tensile stress becomes excessively large. This may possibly deteriorate the brittleness of the inorganic substrate 10 including glass. Conversely, when the chemically strengthened layer 7 is too thin, the effect of the chemical strengthening treatment may not be sufficiently obtained in some cases. In the inorganic substrate 10 including glass according to the present embodiment, the surface compressive stress on the chemically strengthened surface is preferably 500 MPa or more, particularly 650 MPa or more. When the surface compressive stress is less than 500 MPa, a sufficient effect of the chemical strengthening treatment may not be obtained in some cases.

[0041] The surface compressive stress of the inorganic substrate 10 including glass and the thickness of the chemically strengthened layer 7 can be easily measured, for example, by a surface stress meter such as a surface stress meter FSM-6000 manufactured by Orihara Seisakusho Co., Ltd. As described above, in a normal case, the inorganic substrate 10 including glass according to the present embodiment has a thickness in the range of 10 µm (0.01 mm) to 5000 µm (5 mm). When the thickness of the inorganic substrate 10 including glass is larger than 5 mm, it takes time to form the through-holes. In addition, when the thickness of the inorganic substrate 10 including glass is less than 0.01 mm, problems such as cracking occur during processing. In consideration of the aspects of the through-holes and the chemically strengthened layer 7, the thickness of the inorganic substrate 10 including glass according to the present embodiment is more preferably 20 µm (0.02 mm) to 3000 µm (3 mm), and still more preferably 20 µm (0.02 mm) to 1000 µm (1 mm). In particular, the thickness of the inorganic substrate 10 including glass according to the present embodiment is preferably 50 µm (0.05 mm) to 400 µm (0.4 mm).

[0042] The thickness of the chemically strengthened layer 7 in the exposed portion 5 may differ from the thickness of the chemically strengthened layer 7 in the portion where the insulating resin layer 2 or wiring portion 3 is located. For example, the thickness of the chemically strengthened layer 7 in the exposed portion 5 may be less than the thickness of the chemically strengthened layer 7 in the portion of the laminated portion 6 where the insulating resin layer 2 or wiring portion 3 is located. For example, the thickness of the chemically strengthened layer 7 in the exposed portion 5 may be zero. That is, the portion of the inorganic substrate 10 containing glass where the laminated portion 6 is located may be chemically strengthened, while the exposed portion 5 may not be chemically strengthened. For example, the inorganic substrate 10 containing glass may be chemically strengthened while the exposed portion 5 is masked.

[0043] On the other hand, the thickness of the chemically strengthened layer 7 in the exposed portion 5 may be greater than the thickness of the chemically strengthened layer 7 in the portion where the laminated portion 6 is located. For example, the thickness of the chemically strengthened layer 7 in the portion where the laminated portion 6 is located may be zero. In other words, the exposed portion 5 may be chemically strengthened, while the portion of the inorganic substrate 10 containing glass where the laminated portion 6 is located may not be chemically strengthened. For example, the inorganic substrate 10 containing glass may be chemically strengthened while the portion where the laminated portion 6 is located is masked.

[0044] Furthermore, the thickness of the chemically strengthened layer 7 in the exposed portion 5 may differ from the thickness of the chemically strengthened layer 7 on the inner surface of the through hole. For example, the thickness of the chemically strengthened layer 7 in the exposed portion 5 may be less than the thickness of the chemically strengthened layer 7 on the inner surface of the through hole. The thickness of the chemically strengthened layer 7 in the exposed portion 5 may be less than at least one of the thickness of the chemically strengthened layer 7 in the portion where the laminated portion 6 is located and the thickness of the chemically strengthened layer 7 on the inner surface of the through hole. The thickness of the chemically strengthened layer 7 in the exposed portion 5 may be the same as at least one of the thickness of the chemically strengthened layer 7 in the portion where the laminated portion 6 is located and the thickness of the chemically strengthened layer 7 on the inner surface of the through hole.

[0045] On the other hand, the thickness of the chemically strengthened layer 7 in the exposed portion 5 may be greater than the thickness of the chemically strengthened layer 7 on the inner surface of the through hole. Furthermore, the thickness of the chemically strengthened layer 7 in the exposed portion 5 may be greater than at least one of the thickness of the chemically strengthened layer 7 in the portion where the laminated portion 6 is arranged and the thickness of the chemically strengthened layer 7 on the inner surface of the through hole.

[0046] When the thickness of the chemically strengthened layer 7 is X and the thickness of the inorganic substrate 10 containing glass is Y, it is preferable that the following equation (1) holds true.

[0047] Y=A×X (1)

[0048] Here, A is between 2 and 5000.

[0049] <Insulating Resin Layer> The insulating resin layer 2 is arranged to cover at least a portion of the first and second surfaces of the inorganic substrate 10 containing glass. Depending on the desired configuration, such as a wiring pattern, the insulating resin layer 2 may be provided as one layer or as two or more layers on the first and second surfaces of the inorganic substrate 10 containing glass.

[0050] When the insulating resin layer 2 is provided in one layer on the first and second surfaces of the inorganic substrate 10 containing glass, as shown in Figures 1-2 and 6-7, the insulating resin layer 21 is positioned to cover the portion of the first surface of the inorganic substrate 10 containing glass where the wiring portion 3 is not provided, and the wiring portion 3 that is arranged on the first surface. The insulating resin layer 22 is positioned to cover the portion of the second surface of the inorganic substrate 10 containing glass where the wiring portion 3 is not provided, and the wiring portion 3 that is arranged on the second surface.

[0051] As shown in Figures 2 and 6-7, the insulating resin layer 21 has an end face 2e. As shown in Figures 2 and 6-7, the insulating resin layer 22 has an end face 2e. The end face 2e of the insulating resin layer 2 in the wiring board 110 in Figure 6 corresponds to the cut surface when the laminated substrate 100 is separated into individual pieces to manufacture the wiring board 110. The end face 2e of the insulating resin layer 2 in the laminated substrate 101 in Figure 2 and the end face 2e of the insulating resin layer 2 in the wiring board 120 in Figure 7 are created by the mask used to form the exposed portion 5.

[0052] When two or more insulating resin layers 2 are provided on the first and second surfaces of the inorganic substrate 10 containing glass, as shown in Figures 4-5 and 8-9, the insulating resin layer 211 is arranged to cover the portion of the first surface of the inorganic substrate 10 containing glass where the wiring portion 3 is not provided, and the wiring portion 3 provided on the first surface. The insulating resin layer 212 is arranged to cover the portion of the insulating resin layer 211 where the wiring portion 3 is not provided, and the wiring portion 3 provided on the insulating resin layer 211. The insulating resin layer 221 is arranged to cover the portion of the second surface of the inorganic substrate 10 containing glass where the wiring portion 3 is not provided, and the wiring portion 3 provided on the second surface. The insulating resin layer 222 is arranged to cover the portion of the insulating resin layer 221 where the wiring portion 3 is not provided, and the wiring portion 3 provided on the insulating resin layer 221.

[0053] As shown in Figures 5 and 8-9, the insulating resin layers 211 and 212 have end faces 2e. As shown in Figures 5 and 8-9, the insulating resin layers 221 and 222 have end faces 2e. In the wiring board 210 of Figure 8, the end face 2e of the insulating resin layer 2 corresponds to the cut surface when the laminated substrate 200 is separated into individual pieces to manufacture the wiring board 210. The end face 2e of the insulating resin layer 2 in the laminated substrate 201 of Figure 5 and the end face 2e of the insulating resin layer 2 in the wiring board 220 of Figure 9 are created by the mask used to form the exposed portion 5.

[0054] The insulating resin layer 2 contains an insulating resin. The insulating resin layer 2 may also contain an inorganic filler, or it may be a composite material of resin and fibers. The insulating resin layer 2 may further contain other components such as a curing agent and a solvent as needed. Furthermore, the insulating resin layer 2 is preferably in sheet form for ease of manufacture.

[0055] -Resins- Examples of resins include epoxy resins, thermosetting modified polyphenylene ether resins, thermosetting polyimide resins, urea resins, allyl resins, silicon resins, benzoxazine resins, phenolic resins, unsaturated polyester resins, bismaleimidotriazine resins, alkyd resins, furan resins, melamine resins, polyurethane resins, aniline resins, maleimide resins, silicone resins, polycarbonate resins, acrylic resins, polyacetal resins, and polypropylene resins. These may be used individually or in combination of two or more. Among these, epoxy resins are preferred because they have high mechanical strength, heat resistance, and electrical insulation properties, as well as excellent water resistance, chemical resistance, and adhesion.

[0056] Examples of epoxy resins include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol AF type epoxy resin, phenol novolac type epoxy resin, tert-butyl-catechol type epoxy resin, naphthol type epoxy resin, naphthalene type epoxy resin, naphthylene ether type epoxy resin, glycidylamine type epoxy resin, glycidyl ester type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, anthracene type epoxy resin, linear aliphatic epoxy resin, epoxy resin having a butadiene structure, alicyclic epoxy resin, heterocyclic epoxy resin, spiroring-containing epoxy resin, cyclohexanedimethanol type epoxy resin, trimethylol type epoxy resin, and halogenated epoxy resins.

[0057] Among these, bisphenol A type epoxy resin, bisphenol F type epoxy resin, naphthol type epoxy resin, naphthalene type epoxy resin, biphenyl type epoxy resin, naphthylene ether type epoxy resin, glycidyl ester type epoxy resin, anthracene type epoxy resin, and epoxy resins having a butadiene structure are preferred for their superior heat resistance and electrical insulation properties.

[0058] - Inorganic Fillers - Examples of inorganic fillers include silica, barium sulfate, silicon dioxide, calcined talc, zinc molybdenum-treated talc, barium titanate, titanium dioxide, clay, alumina, mica, boehmite, zinc borate, zinc stannate, other metal oxides or metal hydrates, aluminum hydroxide, calcium carbonate, magnesium hydroxide, magnesium silicate, glass fibers, aluminum borate whiskers, and silicon carbonate whiskers. These may be used individually or in combination of two or more. Among these inorganic fillers, those with silica as the main component are preferred.

[0059] Examples of silica include amorphous silica, fused silica, crystalline silica, synthetic silica, hollow silica, and spherical silica. Among these, spherical silica and fused silica are preferred.

[0060] Regarding the median diameter of silica, from the viewpoint of electrical insulation and surface smoothness, it is preferably 2 μm or less, more preferably 1 μm or less, even more preferably 0.8 μm or less, and particularly preferably 0.6 μm or less. Furthermore, from the viewpoint of improving the dispersibility of silica, it is preferably 0.01 μm or more, more preferably 0.05 μm or more, and even more preferably 0.1 μm or more.

[0061] The median diameter of silica can be measured by laser diffraction and scattering, based on Mie scattering theory. Specifically, it can be measured using a laser diffraction scattering particle size distribution analyzer (for example, the LA-950, manufactured by Horiba, Ltd.).

[0062] When the insulating resin layer 2 contains an inorganic filler, the inorganic filler content is preferably 30 parts by mass or more and 80 parts by mass or less per 100 parts by mass of resin. If the content is 30 parts by mass or more, a sufficient effect of reducing the coefficient of thermal expansion can be obtained. If the content is 80 parts by mass or less, sufficient moldability of the insulating resin layer 2 can be obtained.

[0063] - Composite Materials - Examples of composite materials of resins and fibers include composite materials of one or more types of resins and fibers such as inorganic fibers like glass fibers, or organic fibers such as polyamide fibers (e.g., woven fabrics, nonwoven fabrics, etc.).

[0064] —Curing Agent— Examples of the curing agent include phenolic curing agents, active ester curing agents, cyanate ester curing agents, benzoxazine curing agents, and acid anhydride curing agents. Among these, phenolic curing agents, active ester curing agents, and cyanate ester curing agents are preferable. These may be used alone, or two or more of them may be used in combination.

[0065] [Average Thickness of Each Layer of the Insulating Resin Layer] The average thickness of each layer of the insulating resin layer 2 may be 2 μm to 200 μm, is preferably 2 μm to 30 μm, more preferably 2 μm to 28 μm, still more preferably 2 μm to 25 μm, and even more preferably 2 μm to 10 μm, from the viewpoint of relaxing stress on the inorganic substrate 10 containing glass and reducing the occurrence of cracks in the inorganic substrate 10 containing glass.

[0066] The average thickness of each layer of the insulating resin layer 2 can be calculated by, for a region that does not have the wiring portion 3 on the inorganic substrate 10 containing glass and has only the insulating resin layer 2, measuring the thickness of each layer of the insulating resin layer 2 at any three or more points using a film thickness meter (e.g., Smart Film Thickness Meter SM-100S, manufactured by Otsuka Electronics Co., Ltd.) or a laser microscope (e.g., VK-X3000, manufactured by Keyence Corporation), and then obtaining the average value of the measured thicknesses.

[0067] The area of the inorganic substrate 10 containing glass is 10000 mm ２ As for the volume of each layer of the insulating resin layer 2 per unit, from the viewpoint of relaxing stress on the inorganic substrate 10 containing glass and reducing the occurrence of cracks in the inorganic substrate 10 containing glass, the volume is 20 mm ３ or more and 300 mm ３ or less, preferably less than 20 mm ３ or more and 280 mm ３ or less, more preferably 20 mm ３ or more and 250 mm ３ or less, still more preferably 20 mm ３ or more and 100 mm ３ or less is particularly preferable. Here, the "area of the inorganic substrate 10 containing glass" may include a portion where the insulating resin layer 2 is not provided, specifically, the wiring portion 3.

[0068] The area of the inorganic substrate 10 containing glass is 10000 mm ２The volume of each insulating resin layer 2 is equal to the area of ​​the inorganic substrate 10 containing glass, which is 10,000 mm². ２ For any region having the above characteristics, the thickness of each layer of the insulating resin layer 2 is measured using a laser microscope (e.g., VK-X3000, manufactured by Keyence Corporation), and the volume is calculated by summing the thicknesses within the region. Alternatively, the volume can be calculated by measuring the length of the region with a JIS Class 1 stainless steel ruler, multiplying the lengths of the two sides to obtain the area, and then multiplying the thickness by the area. The size of the inorganic substrate 10 containing glass is 10,000 mm². ２ If it is smaller than this, the volume of each layer of the insulating resin layer 2 is measured over the entire area of ​​the inorganic substrate 10 including glass, and the area of ​​the inorganic substrate 10 including glass is 10,000 mm². ２ It can be calculated by converting it to a volume per unit area.

[0069] [Arithmetic surface roughness Sa of the end face of the wiring board] In the wiring board 110, the arithmetic surface roughness Sa of the end face 2e of at least one layer of the insulating resin layer 2 is preferably 0.01 μm or more and 1.00 μm or less, more preferably 0.05 μm or more and 0.50 μm or less, and even more preferably 0.05 μm or more and 0.20 μm or less. When the arithmetic surface roughness Sa is 0.01 μm or more and 1.00 μm or less, the occurrence of crack initiation points in the insulating resin layer 2, between multiple insulating resin layers 2, and at the interface between the insulating resin layer 2 and the inorganic substrate 10 containing glass can be reduced during dicing, thereby reducing the occurrence of cracks in the insulating resin layer 2.

[0070] In the wiring board 110, the arithmetic surface roughness Sa of the end face 10e of the inorganic substrate 10 containing glass is preferably 0.01 μm or more and 2.00 μm or less, and more preferably 0.05 μm or more and 1.00 μm or less. When the arithmetic surface roughness Sa is 0.01 μm or more and 2.00 μm or less, the occurrence of crack initiations within the inorganic substrate 10 containing glass during dicing, or at the interface between the inorganic substrate 10 containing glass and the insulating resin layer 2, can be reduced, thereby reducing the occurrence of cracks in the inorganic substrate 10 containing glass.

[0071] In the wiring board 110, the percentage (%) of the arithmetic surface roughness Sa of the end face 2e of at least one layer of the insulating resin layer 2 is preferably 1% to 1000%, more preferably 2% to 500%, and even more preferably 5% to 400% of the arithmetic surface roughness Sa of the end face 10e of the inorganic substrate 10 containing glass. When the percentage of the arithmetic surface roughness Sa is 1% to 1000%, the occurrence of crack initiations in the insulating resin layer 2, between multiple insulating resin layers 2, and at the interface between the insulating resin layer 2 and the inorganic substrate 10 containing glass can be reduced during dicing, thereby reducing the occurrence of cracks in the inorganic substrate 10 containing glass.

[0072] The arithmetic surface roughness Sa of at least one end face 2e of the insulating resin layer 2, and the arithmetic surface roughness Sa of the end face 10e of the inorganic substrate 10 containing glass, can be measured based on ISO 25178 Surface properties (surface roughness measurement), and specifically, can be measured using a laser microscope (e.g., VK-X3000, manufactured by Keyence Corporation). The arithmetic surface roughness Sa is a parameter that extends the arithmetic mean height Ra of a line to a surface, and is also referred to as the arithmetic mean height Sa.

[0073] [Tensile modulus of the insulating resin layer] The tensile modulus of the insulating resin layer 2 is preferably 1.0 GPa or more and 30 GPa or less, more preferably 1.0 GPa or more and 20 GPa or less, and even more preferably 1.0 GPa or more and 15 GPa or less. When the tensile modulus is 1.0 GPa or more and 30 GPa or less, the occurrence of crack initiations in the insulating resin layer 2, between multiple insulating resin layers 2, and at the interface between the insulating resin layer 2 and the inorganic substrate 10 containing glass can be reduced during dicing, and the occurrence of cracks in the inorganic substrate 10 containing glass can be reduced.

[0074] [Tensile strength of insulating resin layer] The tensile strength of the insulating resin layer 2 is preferably 25 MPa or more and 200 MPa or less, more preferably 25 MPa or more and 150 MPa or less, and even more preferably 25 MPa or more and 90 MPa or less. When the tensile strength is 25 MPa or more and 200 MPa or less, the occurrence of crack initiations in the insulating resin layer 2, between multiple insulating resin layers 2, and at the interface between the insulating resin layer 2 and the inorganic substrate 10 containing glass can be reduced during dicing, and the occurrence of cracks in the inorganic substrate 10 containing glass can be reduced.

[0075] [Flexural modulus of the insulating resin layer] The flexural modulus of the insulating resin layer 2 is preferably 1.0 GPa or more and 50 GPa or less, more preferably 1.0 GPa or more and 30 GPa or less, and even more preferably 1.0 GPa or more and 15 GPa or less. When the flexural modulus is 1.0 GPa or more and 50 GPa or less, the occurrence of crack initiations in the insulating resin layer 2, between multiple insulating resin layers 2, and at the interface between the insulating resin layer 2 and the inorganic substrate 10 containing glass can be reduced during dicing, and the occurrence of cracks in the inorganic substrate 10 containing glass can be reduced.

[0076] [Bending strength of insulating resin layer] The bending strength of the insulating resin layer 2 is preferably 50 MPa to 150 MPa, more preferably 65 MPa to 150 MPa, and even more preferably 85 MPa to 145 MPa. When the bending strength is 50 MPa to 150 MPa, the occurrence of crack initiations during dicing can be reduced within the insulating resin layer 2, between multiple insulating resin layers 2, and at the interface between the insulating resin layer 2 and the inorganic substrate 10 containing glass, thereby reducing the occurrence of cracks in the inorganic substrate 10 containing glass.

[0077] Tensile modulus, tensile strength, flexural modulus, and flexural strength can be measured according to JIS K7161-1:2014 Method for determining the tensile properties of plastics, and specifically, they can be measured using a tensile testing device (for example, device name: AGS-X, manufactured by Shimadzu Corporation).

[0078] Here, the tensile modulus, tensile strength, flexural modulus, and / or flexural strength are affected by the material and thickness of the test specimen. Therefore, when two or more insulating resin layers 2 are arranged on each main surface of the inorganic substrate 10 containing glass, these measurements are performed using the number of insulating resin layers 2 laminated on each main surface of the inorganic substrate 10 containing glass as test specimens.

[0079] [Peel strength between the glass-containing inorganic substrate and the insulating resin layer] In one embodiment, the peel strength between the glass-containing inorganic substrate 10 and the insulating resin layer 2 is preferably 4.9 N / cm or more and 49 N / cm or less, more preferably 9.8 N / cm or more and 49 N / cm or less, and even more preferably 19.6 N / cm or more and 49 N / cm or less. When the peel strength is 4.9 N / cm or more and 49 N / cm or less, the occurrence of crack initiation points due to poor adhesion at the interface between the insulating resin layer 2 and the glass-containing inorganic substrate 10 can be reduced in the event of mechanical fracture such as dicing or thermal shock such as refrigeration cycles, thereby reducing the occurrence of cracks in the glass-containing inorganic substrate 10.

[0080] In one embodiment, the peel strength between the inorganic substrate 10 containing glass and the insulating resin layer 2 is preferably 0.0098 N / cm or more and less than 4.9 N / cm, more preferably 0.098 N / cm or more and less than 4.9 N / cm, and even more preferably 0.98 N / cm or more and less than 4.9 N / cm. When the peel strength is 0.0098 N / cm or more and less than 4.9 N / cm, the adhesion at the interface between the insulating resin layer 2 and the inorganic substrate 10 containing glass is too strong, which reduces the occurrence of cracks that originate from cohesive failure of the substrate or resin due to mechanical failure such as dicing or thermal shock such as refrigeration cycles, thereby reducing the occurrence of cracks in the inorganic substrate 10 containing glass.

[0081] The peel strength between the inorganic substrate containing glass and the insulating resin layer can be measured according to JIS C6481 Test Method for Copper-Clad Laminates for Printed Wiring Boards. Specifically, an evaluation substrate B is prepared by placing an insulating resin layer 2 on an inorganic substrate 10 containing glass without vias, and making cuts around a 10 mm wide x 100 mm long area of ​​the insulating resin layer 2 (see Figure 10). Figure 10 is a diagram illustrating the procedure for measuring the peel strength between the inorganic substrate 10 containing glass and the insulating resin layer 2. In Figure 10, the inorganic substrate 10 containing glass is approximately 25 mm wide x 100 mm long, and the insulating resin layer 2 is 10 mm wide x 100 mm long. As shown in Figure 10, the peel strength can be determined by measuring the load (N / cm) when one end of the insulating resin layer 2 is peeled off, grasped with a gripper, and pulled vertically 35 mm at a speed of 50 mm / min at room temperature. The peel strength can be measured using a tensile testing machine (for example, machine name: Tensilon Universal Tester, manufactured by A&D Co., Ltd.). If two or more insulating resin layers 2 are arranged on each main surface of the inorganic substrate 10 containing glass, the peel strength is measured using the number of insulating resin layers 2 stacked on each main surface of the inorganic substrate 10 containing glass as the evaluation substrate B. Alternatively, the evaluation substrate B can be prepared by arranging the insulating resin layers 2 on an inorganic substrate 10 containing glass that does not have vias.

[0082] <Wiring Section> In the laminated substrates 100, 101 and wiring substrates 110, 120 shown in Figures 1-2 and 6-7, the wiring section 3 has a first wiring area, a second wiring area, and a through-hole area. The first wiring area is located on the surface of the first face of the inorganic substrate 10 containing glass and on the surface of the insulating resin layer 21. The second wiring area is located on the surface of the second face of the inorganic substrate 10 containing glass and on the surface of the insulating resin layer 22. The through-hole area is located inside a through-hole that penetrates the inorganic substrate 10 containing glass in the thickness direction. The through-hole area electrically connects the first wiring area and the second wiring area.

[0083] In the laminated substrates 200, 201 and wiring substrates 210, 220 shown in Figures 4-5 and 8-9, the wiring section 3 has a first wiring region, a second wiring region, and a through region. The first wiring region is located on the surface of the first face of the inorganic substrate 10 containing glass, and on the surfaces of the insulating resin layers 211 and 212. The second wiring region is located on the surface of the second face of the inorganic substrate 10 containing glass, and on the surfaces of the insulating resin layers 221 and 222. The through region is located inside a through hole that penetrates the inorganic substrate 10 containing glass in the thickness direction. The through region electrically connects the first wiring region and the second wiring region.

[0084] The wiring section 3 is conductive. The wiring section 3 contains a metal as its main component. Examples of metals include copper, silver, gold, platinum, nickel, titanium, aluminum, chromium, and alloys thereof. Among these, copper is preferred from the viewpoint of cost and conductivity.

[0085] The average thickness of the wiring section 3 is not particularly limited as long as it is smaller than the average thickness of each layer of the insulating resin layer 2, and can be appropriately selected according to the purpose, but 1 μm to 28 μm is preferred, 2 μm to 25 μm is more preferred, and 2 μm to 10 μm is even more preferred. If the average thickness of the wiring section 3 is 1 μm or more, conductivity can be obtained, and if it is smaller than the average thickness of each layer of the insulating resin layer 2 and 28 μm or less, insulation from other wiring sections 3 can be ensured.

[0086] The average thickness of each layer of the insulating resin layer 2 (T ２ ) the average thickness of the wiring section 3 (T ３ ) proportion (T ３ / T ２ There are no particular restrictions on the ratio, and it can be selected as appropriate depending on the purpose, but 1 / 10 to 9 / 10 is preferred, 2 / 10 to 8 / 10 is more preferred, and 4 / 10 to 6 / 10 is even more preferred.

[0087] <Connection Terminals> The connection terminals 4 are arranged on the surface of the insulating resin layer 2. When the laminated substrate 100 and the wiring board 110 have a cover layer, the connection terminals 4 are exposed to the outside of the laminated substrate 100 and the wiring board 110 through an opening provided in the cover layer. The connection terminals 4 are electrically conductive. The connection terminals 4 mainly contain metal. Examples of metals include copper, silver, gold, platinum, nickel, titanium, aluminum, chromium, and alloys thereof. Among these, copper is preferred from the viewpoint of cost and conductivity.

[0088] <Cover Layer> The laminated substrate 100 and the wiring substrate 110 of this embodiment may have a cover layer disposed on the surface of the insulating resin layer 2. The cover layer has openings in the thickness direction of the cover layer so that the connection terminals 4 disposed on the surface of the insulating resin layer 2 are exposed. The cover layer may be mainly composed of a resin such as solder resist, or it may be formed from an inorganic material containing glass, similar to the inorganic substrate 10 containing glass.

[0089] (Semiconductor Package) The semiconductor package of this embodiment is not particularly limited as long as it has the wiring board 110 of this embodiment described above, and can be appropriately selected according to the purpose. Specifically, it further has one or more integrated circuits (ICs), and the wiring board 110 and the integrated circuits are electrically connected via each connection terminal 4.

[0090] (Method for manufacturing a laminated substrate) As shown in Figure 11, the method for manufacturing the laminated substrate 100 of this embodiment comprises forming a chemically strengthened layer on an inorganic substrate 10 containing glass (step S1), and arranging the laminated portion 6 on the inorganic substrate 10 containing glass (step S2). The method for manufacturing the laminated substrate 100 may further include other steps as needed, such as arranging connection terminals 4 (step S3) and arranging a cover layer (step S4).

[0091] As shown in Figure 12, step S2 includes arranging the patterned wiring portion 3 on at least one of the first and second surfaces of the inorganic substrate 10 containing glass (step S22), and arranging one or more insulating resin layers 2 so as to cover at least a portion of the inorganic substrate 10 containing glass (step S23).

[0092] As shown in Figure 13, step S2 may further include masking the exposed portion 5 before step S22 (step S21) and exposing the exposed portion 5 after step S23 (step S24).

[0093] (Method for manufacturing a wiring board) As shown in Figure 14, the method for manufacturing the wiring board 110 of this embodiment includes manufacturing a laminated substrate 100 using the method for manufacturing a laminated substrate 100 of this embodiment described above (steps S1 to S4), and dicing the obtained laminated substrate 100 (step S5). The method for manufacturing the wiring board 110 may further include other steps as necessary.

[0094] A method for manufacturing a laminated substrate 100 according to one embodiment will be described. The method for manufacturing the laminated substrate 100 includes, for example, steps S1 to S4. In step S1, a chemically strengthened layer 7 is formed by chemically strengthening at least one of the first and second surfaces of an inorganic substrate 10 containing glass. In step S2, a laminated portion 6 is placed on the inorganic substrate 10 containing glass. In step S3, connection terminals 4 are placed on the surface of the insulating resin layer 2. In step S4, a cover layer is placed so as to cover at least a part of the insulating resin layer 2 and expose the connection terminals 4.

[0095] Step S2 may include steps S22 to S23. In step S22, a patterned wiring portion 3 is placed on at least one of the first and second surfaces of the inorganic substrate 10 containing glass. In step 23, one or more insulating resin layers 2 are placed so as to cover at least a portion of the inorganic substrate 10 containing glass. Step S2 may further include steps S21 and S24. In step S21, the exposed portion 5 is masked. In step S22, a patterned wiring portion 3 is placed on at least one surface of the masked inorganic substrate 10 containing glass. In step 23, one or more insulating resin layers 2 are placed so as to cover at least a portion of the masked inorganic substrate 10 containing glass. In step S24, the exposed portion 5 is exposed. The laminated substrate 100 is manufactured by the above steps.

[0096] A method for manufacturing a wiring board 110 according to one embodiment will be described. The method for manufacturing the wiring board 110 includes, for example, steps S1 to S5. Steps S1 to S4 are the same as the method for manufacturing the laminated substrate 100 described above. In step S5, the obtained laminated substrate 100 is diced to form individual pieces. The wiring board 110 is manufactured in this way.

[0097] <Step S1> In step S1, a chemically strengthened layer 7 is formed on the inorganic substrate 10 containing glass. First, the inorganic substrate 10 containing glass is prepared. As the inorganic substrate 10 containing glass, the items described in the laminated substrate 100 and wiring substrate 110 of this embodiment can be appropriately selected. Step S1 may also include forming through holes in the inorganic substrate 10 containing glass. After that, step S1 forms a chemically strengthened layer 7 on the inorganic substrate 10 containing glass. Step S1 may also include forming a mask for forming exposed portions 5 on at least one of the first surface and the second surface of the inorganic substrate 10 containing glass. After that, step S1 forms a chemically strengthened layer 7 on the inorganic substrate 10 containing glass. Step S1 controls the placement of the mask, the immersion time of the chemical strengthening solution, and the flow rate of the chemical strengthening solution so that the thickness of the chemically strengthened layer 7 formed on the first surface, the second surface, the inner surface of the through holes, and the exposed portions 5 is adjusted.

[0098] <Step S2> In step S2, as shown in Figures 1-2 and 4-5, the laminated portion 6 is placed on the inorganic substrate 10 containing glass. The insulating resin layer 2 and wiring portion 3 in the laminated portion 6 can be appropriately selected from those described in the laminated substrate 100 and wiring substrate 110 of this embodiment. Step S2 includes steps S22 to S23.

[0099] Step S22 involves arranging the patterned wiring portion 3 on at least one surface of the inorganic substrate 10 containing glass. The wiring portion 3 can be appropriately selected from those described in the laminated substrate 100 and wiring substrate 110 of this embodiment.

[0100] There are no particular restrictions on the method of arranging the wiring section 3, and known methods can be appropriately selected depending on the purpose. Examples include copper foil sputtering, chemical vapor deposition (CVD), electroless copper plating, electrolytic copper plating, etching, and printing of conductive paste. Furthermore, subtractive methods, semi-additive methods, fully additive methods, etc., can be appropriately selected. Specifically, the wiring section 3 can be formed by electrolytic copper plating on a seed layer formed on an inorganic substrate 10 containing glass, and then performing photolithography and etching in a patterned manner. Examples of methods for forming the through-region of the wiring section 3 include electroless copper plating and electrolytic copper plating.

[0101] Step S23 involves arranging one or more insulating resin layers 2 so as to cover at least a portion of the inorganic substrate 10 containing glass. The insulating resin layers 2 can be appropriately selected from those described in the laminated substrate 100 and wiring substrate 110 of this embodiment.

[0102] As shown in Figures 4 and 5, if the laminated substrates 200 and 201 have two or more (multilayer) insulating resin layers 2 and a pattern of multilayer wiring portions 3, steps S22 and S23 are repeated alternately. In this way, a build-up method is used in which the formation of wiring portions 3 and the formation of insulating resin layers 2 are performed alternately to form a pattern of multilayer insulating resin layers 2 and wiring portions 3. This makes it possible to form a laminated portion 6 that includes two or more insulating resin layers 2 arranged to cover at least a part of the inorganic substrate 10 containing glass, and wiring portions 3 arranged on at least one surface of the inorganic substrate 10 containing glass and the insulating resin layers 2.

[0103] There are no particular restrictions on the method of arranging the insulating resin layer 2, and a known method can be appropriately selected depending on the purpose. Examples include vacuum bonding, and a method of heat-curing the insulating resin layer 2 by heating after vacuum bonding.

[0104] In step S2, as shown in Figures 2 and 5, the laminated portion 6 may be arranged on the inorganic substrate 10 containing glass such that at least one of the first and second surfaces of the inorganic substrate 10 containing glass has an exposed portion 5. In that case, step S2 may include steps S21 and S24 in addition to steps S22 and S23.

[0105] Step S21 involves masking the exposed portion 5 formed on at least one of the first and second surfaces of the inorganic substrate 10 containing glass. The method for masking the exposed portion 5 is not particularly limited and may include, for example, laminating a masking material onto the exposed portion 5. The masking material includes, for example, masking tape.

[0106] Furthermore, a photomask may be used to mask the exposed portion 5. Specifically, this includes a first mask used when arranging the wiring portion 3 which masks the exposed portion 5, and a second mask used when arranging the insulating resin layer 2 which masks the exposed portion 5.

[0107] Step S22 involves placing the patterned wiring portion 3 on at least one surface of the inorganic substrate 10, which includes the masked glass.

[0108] Step S23 involves placing one or more insulating resin layers 2 so as to cover at least a portion of the inorganic substrate 10 containing the masked glass.

[0109] Step S24 exposes the exposed portion 5. Specifically, step S24 removes the masking material from the inorganic substrate 10 including the glass. Step S24 also includes removing the first mask used when arranging the wiring portion 3 and removing the second mask used when arranging the insulating resin layer 2.

[0110] <Step S3> Step S3 involves placing the connection terminals 4 on the surface of the insulating resin layer 2. The connection terminals 4 can be appropriately selected from those described in the laminated substrate 100 and wiring substrate 110 of this embodiment.

[0111] There are no particular restrictions on the method of arranging the connection terminals 4, and a known method can be appropriately selected depending on the purpose. For example, one method is to form a resist pattern by photolithography, masking the area other than the connection terminal 4 formation area at the end of the wiring section 3, forming the connection terminals 4 inside the resist pattern, and then removing the resist pattern.

[0112] Furthermore, it is preferable to apply a surface plating of nickel, palladium, gold, or the like to the surface of the connector terminal 4 after the cover layer has been formed. It is also preferable to roughen the surface of the connector terminal 4 by, for example, plasma treatment. In addition, a reflow solder layer may be formed on the surface of the connector terminal 4. The solder layer is reflowed during component mounting to electrically connect the connector terminal 4 to the component terminal.

[0113] <Step S4> Step S4 involves arranging a cover layer so as to cover at least a portion of the insulating resin layer 2 and expose the connection terminals 4. The cover layer can be appropriately selected from those described in the laminated substrate 100 and wiring substrate 110 of this embodiment.

[0114] As described above, a laminated substrate 100 can be manufactured as a multi-cavity substrate (so-called mother substrate) containing multiple wiring boards 110, as shown in Figures 1-2 and 4-5.

[0115] <Step S5> Next, in step S5, the obtained laminated substrate 100 is diced (divided into individual pieces). By cutting the laminated substrate 100 in the stacking direction, individual wiring boards 110 can be manufactured as shown in Figures 6 to 9. Alternatively, as shown in Figures 7 and 9, individual wiring boards 110 can be manufactured by cutting the laminated substrates 101 and 201 along the exposed portions 5 of the laminated substrates 101 and 201 in the stacking direction, as shown in Figures 7 and 9.

[0116] There are no particular restrictions on the dicing method, and a known method can be appropriately selected depending on the purpose. Examples include blade dicing, laser ablation, and laser stealth. Among these, the blade dicing method is preferred in the laminated substrate 100 of this embodiment because it can effectively reduce the generation of stress during dicing and reduce the occurrence of cracks in the inorganic substrate containing glass.

[0117] Step S5 may include etching the end face 10e of the inorganic substrate 10 containing glass. The etching may result in the end face 10e of the inorganic substrate 10 containing glass being convex or concave outwards. When etching the end face 10e of the inorganic substrate 10 containing glass, the first and second surfaces are protected by covering them with a protective film.

[0118] According to this embodiment, at least one of the first and second surfaces of the inorganic substrate 10 containing glass is chemically strengthened. This reduces the occurrence of cracks due to the difference in thermal expansion coefficients between the inorganic substrate 10 containing glass and each component of the laminated portion 6. Therefore, it is possible to reduce the occurrence of cracks during dicing, and under cold cycles, high-temperature and high-humidity environments, etc.

[0119] Furthermore, the thickness of the inorganic substrate 10 containing glass is in the range of 0.01 mm to 5 mm, and the thickness of the chemically strengthened layer 7 is in the range of 1 μm to 30 μm. This makes it possible to suppress excessive tensile stress that occurs when the chemically strengthened layer 7 is too thick, and to suppress the reduction of surface compressive stress when the chemically strengthened layer 7 is too thin.

[0120] Furthermore, in this embodiment, when the thickness of the chemically strengthened layer 7 is X and the thickness of the inorganic substrate 10 containing glass is Y, the thickness of the chemically strengthened layer 7 and the inorganic substrate 10 containing glass is controlled by the formula Y = A × X. Therefore, crack occurrence can be controlled with high precision.

[0121] Furthermore, at least one of the first and second surfaces of the inorganic substrate 10 containing glass may include an exposed portion 5. Since the insulating resin layer 2 and the wiring portion 3 are not arranged in the exposed portion 5, the occurrence of cracks due to the difference in thermal expansion coefficient with the inorganic substrate 10 containing glass can be reduced. Therefore, the occurrence of cracks during dicing and the occurrence of cracks under cold cycles, high-temperature and high-humidity environments, etc. can be reduced.

[0122] By making the thickness of the chemically strengthened layer 7 in the exposed portion 5 smaller than the thickness of the chemically strengthened layer 7 in the portions other than the exposed portion 5, dicing can be made easier and the occurrence of cracks during dicing can be reduced.

[0123] On the other hand, if a higher strength of the inorganic substrate 10 including glass can reduce the occurrence of cracks, the thickness of the chemically strengthened layer 7 in the exposed portion 5 is made greater than the thickness of the chemically strengthened layer 7 in the portion other than the exposed portion.

[0124] The end face 6e of the laminated portion 6 on the exposed portion 5 side includes the end face 3e of the wiring portion 3. Therefore, the thermal expansion of the insulating resin layer 2 and the wiring portion 3 is not restricted at the end of the laminated portion 6 on the exposed portion 5 side. This makes it possible to alleviate the stress generated by the difference in thermal expansion coefficients between the insulating resin layer 2 and the wiring portion 3.

[0125] Furthermore, the exposed portion 5 is positioned between the laminated portions 6. Therefore, adjacent laminated portions 6 are spaced apart. This allows for the mitigation of compressive stress caused by the difference in thermal expansion between the laminated portions 6 of adjacent wiring boards 110.

[0126] The exposed portion 5 may be formed on the first and second surfaces. This facilitates dicing and reduces the occurrence of cracks during dicing. Furthermore, because it is formed on both the first and second surfaces, it is possible to balance the stress generated on the first surface and the stress generated on the second surface.

[0127] The exposed portion 5 may be formed on either the first surface or the second surface. If the stress generated by the laminated portion 6 on the first surface and the stress generated by the laminated portion 6 on the second surface are different, the exposed portion 5 can be formed on either the first surface or the second surface to adjust the balance between the stress generated on the first surface and the stress generated on the second surface.

[0128] By etching the edge face 10e of the inorganic substrate 10 containing glass, microcracks that could be sources of cracks at the edge face 10e can be reduced, thereby reducing the occurrence of cracks under thermal cycling and high-temperature, high-humidity environments.

[0129] The experimental data is described below. Examples 1 to 5 below are examples, and examples 6 to 8 below are comparative examples.

[0130] [Example 1] <Manufacturing of a laminated substrate> As the inorganic substrate 10 containing glass, alkali glass with dimensions of 510 mm x 515 mm, an average thickness of 0.5 mm, and an alkali content of 4.0% was used. The first and second surfaces of the inorganic substrate 10 containing alkali glass were chemically strengthened. The thickness of the chemically strengthened layer 7 was 10 μm. If the thickness of the chemically strengthened layer 7 is X and the thickness of the inorganic substrate 10 containing glass is Y, then Y = 50X.

[0131] Next, to form the patterned wiring section 3, electrolytic copper plating was applied to a seed layer formed on the inorganic substrate 10 containing glass. Subsequently, the wiring section 3 with an average thickness of 1.0 μm was formed by photolithography and etching in a patterned manner. An insulating resin film with an average thickness of 200.0 μm was used as the insulating resin layer 2. The insulating resin film was placed to cover the first and second surfaces of the inorganic substrate 10 containing glass, forming one insulating resin layer. Subsequently, a cover layer was formed by placing a solder resist with an average thickness of 25 μm so that the connection terminals 4 are exposed and the remaining portion of the wiring section 3 and the insulating resin layer 2 are covered. The laminated substrate 100 was thus manufactured. The laminated substrate 100 has one insulating resin layer 2 on the first and second surfaces. That is, one insulating resin film is placed on each of the first and second surfaces of the inorganic substrate 10 containing glass.

[0132] <Manufacturing of Wiring Boards> The obtained laminated substrate 100 was divided into individual pieces by dicing with a blade to manufacture the wiring board 110 of Example 1. No defects such as cracks were found in the wiring board 110 after dicing.

[0133] <Evaluation: Thermal Shock Test> A thermal shock test will be performed on the individual circuit boards for 500 cycles, with the temperature rising and falling from -65°C to 150°C at a rate of 60°C per minute, including a 1-minute period of residence. This test will follow the detailed procedures outlined in JEDEC standard 020D.1, JESD22-A113F, and JEDEC standard JESD22-A104D regarding temperature cycling.

[0134] [Example 2] <Manufacturing of a laminated substrate> As the inorganic substrate 10 containing glass, an alkali glass with a size of 510 mm x 515 mm, an average thickness of 0.5 mm, and an alkali content of 7.5% was used. The first and second surfaces of the inorganic substrate 10 containing alkali glass were chemically strengthened. The thickness of the chemically strengthened layer 7 was 20 μm. If the thickness of the chemically strengthened layer 7 is X and the thickness of the inorganic substrate 10 containing glass is Y, then Y = 25X.

[0135] Next, to form the patterned wiring section 3, electrolytic copper plating was applied to a seed layer formed on the inorganic substrate 10 containing glass. Subsequently, the wiring section 3 with an average thickness of 1.0 μm was formed by photolithography and etching in a patterned manner. An insulating resin film with an average thickness of 100.0 μm was used as the insulating resin layer 2. The insulating resin film was placed to cover the first and second surfaces of the inorganic substrate 10 containing glass, forming one insulating resin layer. Subsequently, a cover layer was formed by placing a solder resist with an average thickness of 25 μm so that the connection terminals 4 are exposed and the remaining portion of the wiring section 3 and the insulating resin layer 2 are covered. The laminated substrate 100 was thus manufactured. The laminated substrate 100 has one insulating resin layer 2 on the first and second surfaces. That is, one insulating resin film is placed on each of the first and second surfaces of the inorganic substrate 10 containing glass.

[0136] <Manufacturing of Wiring Boards> The obtained laminated substrate 100 was divided into individual pieces by dicing with a blade to manufacture the wiring board 110 of Example 2. No defects such as cracks were found in the wiring board 110 after dicing.

[0137] <Evaluation: Thermal shock test> Same as Example 1 above.

[0138] [Example 3] <Manufacturing of a laminated substrate> As the inorganic substrate 10 containing glass, an alkali glass with dimensions of 510 mm x 515 mm, an average thickness of 0.5 mm, and an alkali content of 18.0% was used. The first and second surfaces of the inorganic substrate 10 containing alkali glass were chemically strengthened. The thickness of the chemically strengthened layer 7 was 5 μm. If the thickness of the chemically strengthened layer 7 is X and the thickness of the inorganic substrate 10 containing glass is Y, then Y = 100X.

[0139] Next, in order to form the patterned wiring section 3, electrolytic copper plating was applied to a seed layer formed on the inorganic substrate 10 containing glass. Then, by applying photolithography and etching in a patterned manner, the wiring section 3 with an average thickness of 1.0 μm was formed. As the insulating resin layer 2, an insulating resin film with an average thickness of 200.0 μm per layer was used. The insulating resin film was arranged to cover the first and second surfaces of the inorganic substrate 10 containing glass, forming one insulating resin layer at a time. Subsequently, a cover layer was formed by arranging a solder resist with an average thickness of 25 μm so that the connection terminals 4 are exposed and the remaining portion of the wiring section 3 and the insulating resin layer 2 are covered. As a result, the laminated substrate 100 was manufactured. The laminated substrate 100 has three insulating resin layers 2 on the first and second surfaces.

[0140] <Manufacturing of Wiring Boards> The obtained laminated substrate 100 was divided into individual pieces by dicing with a blade to manufacture the wiring board 110 of Example 3. No defects such as cracks were found in the wiring board 110 after dicing.

[0141] <Evaluation: Thermal shock test> Same as Example 1 above.

[0142] [Example 4] <Manufacturing of a laminated substrate> As the inorganic substrate 10 containing glass, an alkali glass with a size of 510 mm x 515 mm, an average thickness of 0.5 mm, and an alkali content of 11.5% was used. The first and second surfaces of the inorganic substrate 10 containing alkali glass were chemically strengthened. The thickness of the chemically strengthened layer 7 was 30 μm. If the thickness of the chemically strengthened layer 7 is X and the thickness of the inorganic substrate 10 containing glass is Y, then Y = 16.7X.

[0143] Next, in order to form the patterned wiring section 3, electrolytic copper plating was applied to a seed layer formed on the inorganic substrate 10 containing glass. Then, by applying photolithography and etching in a patterned manner, the wiring section 3 with an average thickness of 1.0 μm was formed. As the insulating resin layer 2, an insulating resin film with an average thickness of 100.0 μm per layer was used. The insulating resin film was arranged to cover the first and second surfaces of the inorganic substrate 10 containing glass, forming one insulating resin layer at a time. Subsequently, a cover layer was formed by arranging a solder resist with an average thickness of 25 μm so that the connection terminals 4 are exposed and the remaining portion of the wiring section 3 and the insulating resin layer 2 are covered. The laminated substrate 100 was thus manufactured. The laminated substrate 100 has two insulating resin layers 2 on the first and second surfaces.

[0144] <Manufacturing of Wiring Boards> The obtained laminated substrate 100 was divided into individual pieces by dicing with a blade to manufacture the wiring board 110 of Example 4. No defects such as cracks were found in the wiring board 110 after dicing.

[0145] <Evaluation: Thermal shock test> Same as Example 1 above.

[0146] [Example 5] <Manufacturing of a laminated substrate> As the inorganic substrate 10 containing glass, alkali glass with dimensions of 510 mm x 515 mm, an average thickness of 0.5 mm, and an alkali content of 20.0% was used. The first and second surfaces of the inorganic substrate 10 containing alkali glass were chemically strengthened. The thickness of the chemically strengthened layer 7 was 1 μm. If the thickness of the chemically strengthened layer 7 is X and the thickness of the inorganic substrate 10 containing glass is Y, then Y = 500X.

[0147] Next, to form the patterned wiring section 3, electrolytic copper plating was applied to a seed layer formed on the inorganic substrate 10 containing glass. Then, by applying photolithography and etching in a patterned manner, the wiring section 3 with an average thickness of 1.0 μm was formed. As the insulating resin layer 2, an insulating resin film with an average thickness of 200.0 μm per layer was used. The insulating resin film was arranged to cover the first and second surfaces of the inorganic substrate 10 containing glass, forming one insulating resin layer at a time. Subsequently, a cover layer was formed by arranging a solder resist with an average thickness of 25 μm so that the connection terminals 4 are exposed and the remaining portion of the wiring section 3 and the insulating resin layer 2 are covered. The laminated substrate 100 was thus manufactured. The laminated substrate 100 has two insulating resin layers 2 on the first and second surfaces.

[0148] <Manufacturing of Wiring Boards> The obtained laminated substrate 100 was divided into individual pieces by dicing with a blade to manufacture the wiring board 110 of Example 5. No defects such as cracks were found in the wiring board 110 after dicing.

[0149] <Evaluation: Thermal shock test> Same as Example 1 above.

[0150] [Example 6] <Manufacturing of a laminated substrate> As the inorganic substrate 10 containing glass, alkali glass with a size of 550 mm x 650 mm, an average thickness of 0.5 mm, and an alkali content of 4.0% was used. The first and second surfaces of the inorganic substrate 10 containing alkali glass were chemically strengthened. The thickness of the chemically strengthened layer 7 was 0.8 μm. If the thickness of the chemically strengthened layer 7 is X and the thickness of the inorganic substrate 10 containing glass is Y, then Y = 625X.

[0151] Next, to form the patterned wiring section 3, electrolytic copper plating was applied to a seed layer formed on the inorganic substrate 10 containing glass. Subsequently, the wiring section 3 with an average thickness of 1.0 μm was formed by photolithography and etching in a patterned manner. An insulating resin film with an average thickness of 200.0 μm was used as the insulating resin layer 2. The insulating resin film was arranged to cover the first and second surfaces of the inorganic substrate 10 containing glass, forming one insulating resin layer. Subsequently, a cover layer was formed by arranging a solder resist with an average thickness of 25 μm so that the connection terminals 4 are exposed and the remaining portion of the wiring section 3 and the insulating resin layer 2 are covered. The laminated substrate 100 was thus manufactured. The laminated substrate 100 has one insulating resin layer 2 on the first and second surfaces. That is, one insulating resin film is arranged on each of the first and second surfaces of the inorganic substrate 10 containing glass.

[0152] <Manufacturing of Wiring Boards> The obtained laminated substrate 100 was divided into individual pieces by dicing with a blade to manufacture the wiring board 110 of Example 6. No defects such as cracks were found in the wiring board 110 after dicing.

[0153] <Evaluation: Thermal Shock Test> A thermal shock test was performed on the individualized wiring boards, raising and lowering the temperature from -65°C to 150°C, including a 1-minute period of residence, at a rate of 60°C per minute. Cracks occurred in the inorganic substrate 10 containing glass at the 50th cycle. This test followed the detailed procedures outlined in JEDEC standard 020D.1, JESD22-A113F, and JEDEC standard JESD22-A104D regarding temperature cycling.

[0154] [Example 7] <Manufacturing of a laminated substrate> As the inorganic substrate 10 containing glass, alkali glass with a size of 550 mm x 650 mm, an average thickness of 0.5 mm, and an alkali content of 4.0% was used. The first and second surfaces of the inorganic substrate 10 containing alkali glass were chemically strengthened. The thickness of the chemically strengthened layer 7 was 0.5 μm. If the thickness of the chemically strengthened layer 7 is X and the thickness of the inorganic substrate 10 containing glass is Y, then Y = 1000X.

[0155] Next, to form the patterned wiring section 3, electrolytic copper plating was applied to a seed layer formed on the inorganic substrate 10 containing glass. Subsequently, the wiring section 3 with an average thickness of 1.0 μm was formed by photolithography and etching in a patterned manner. As the insulating resin layer 2, an insulating resin film with an average thickness of 200.0 μm per layer was used. The insulating resin film was arranged to cover the first and second surfaces of the inorganic substrate 10 containing glass, forming one insulating resin layer at a time. Subsequently, a cover layer was formed by arranging a solder resist with an average thickness of 25 μm so that the connection terminals 4 are exposed and the remaining portion of the wiring section 3 and the insulating resin layer 2 are covered. The laminated substrate 100 was thus manufactured. The laminated substrate 100 has two insulating resin layers 2 on the first and second surfaces. That is, two layers of insulating resin film are arranged on the first and second surfaces of the inorganic substrate 10 containing glass.

[0156] <Manufacturing of Wiring Board> The obtained laminated substrate 100 was divided into individual pieces by dicing with a blade to manufacture the wiring board 110 of Example 7. Cracks occurred in the wiring board 110 due to the dicing.

[0157] <Evaluation: Thermal shock test> This test was not performed because cracks occurred during the individualization process.

[0158] [Example 8] <Manufacturing of a laminated substrate> As the inorganic substrate 10 containing glass, a size of 550 mm x 650 mm, an average thickness of 0.5 mm, and alkali-free glass was used. The first and second surfaces of the inorganic substrate 10 containing glass were not chemically strengthened.

[0159] Next, to form the patterned wiring section 3, electrolytic copper plating was applied to a seed layer formed on the inorganic substrate 10 containing glass. Then, by performing photolithography and etching in a patterned manner, the wiring section 3 with an average thickness of 1.0 μm was formed. An insulating resin film with an average thickness of 200.0 μm was used as the insulating resin layer 2. The insulating resin film was arranged to cover the first and second surfaces of the inorganic substrate 10 containing glass, forming one insulating resin layer at a time. Subsequently, a cover layer was formed by arranging a solder resist with an average thickness of 25 μm so that the connection terminals 4 are exposed and the remaining portion of the wiring section 3 and the insulating resin layer 2 are covered. The laminated substrate 100 was thus manufactured. The laminated substrate 100 has two insulating resin layers 2 on the first and second surfaces. That is, two layers of insulating resin film are arranged on the first and second surfaces of the inorganic substrate 10 containing glass.

[0160] <Manufacturing of Wiring Board> The obtained laminated substrate 100 was divided into individual pieces by dicing with a blade to manufacture the wiring board 110 of Example 8. Cracks occurred in the wiring board 110 due to the dicing.

[0161] <Evaluation: Thermal shock test> This test was not performed because cracks occurred during the individualization process.

[0162]

[0163] The results for Examples 1 to 5 are shown in Table 1. The results for Examples 6 to 8 are shown in Table 2. From these results, it was found that by including a chemically strengthened layer 7 on at least one of the first and second surfaces of the inorganic substrate 10 containing glass, it is possible to provide a laminated substrate 100 and a wiring substrate 110 that can suppress the occurrence of cracks.

[0164] The above describes the laminated substrate, wiring substrate, method for manufacturing the laminated substrate, method for manufacturing the wiring substrate, and semiconductor package related to this disclosure. However, this disclosure is not limited to the embodiments described above. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope described in the claims. These also naturally fall within the technical scope of this disclosure. For example, combinations of the configurations of Embodiments 1 and 2, Examples 1 to 5, and Comparative Examples 1 to 3 are also within the scope of the technical concept of the embodiments. Furthermore, the following configurations are also within the scope of the technical concept of the embodiments.

[0165] (Note 1) A laminated substrate having a plurality of wiring boards, each having an inorganic substrate containing glass, one or more insulating resin layers arranged to cover at least a portion of the inorganic substrate containing glass, and wiring portions arranged on at least one surface of the inorganic substrate containing glass and the insulating resin layers, wherein at least one of the first surface and the second surface opposite the first surface includes an exposed portion, the inorganic substrate containing glass has a through hole penetrating from the first surface to the second surface, at least one of the first surface and the second surface, and the inner surface of the through hole includes a chemically strengthened layer, and the thickness of the chemically strengthened layer in the exposed portion, the thickness of the chemically strengthened layer on at least one of the first surface and the second surface other than the exposed portion, and the thickness of the chemically strengthened layer on the inner surface of the through hole are different from the thickness of the other chemically strengthened layers.

[0166] This application claims priority based on Japanese Patent Application No. 2025-039395, filed on 12 March 2025, and incorporates all of its disclosures herein.

[0167] 2, 21, 22, 211, 212, 221, 222 Insulating resin layer 3 Wiring section 3e End face 4 Connection terminal 5 Exposed section 6 Laminated section 6e End face 7 Chemically strengthened layer 10 Inorganic substrate containing glass 10e End face 100, 101 Laminated substrate 110, 120 Wiring board 200, 201 Laminated substrate 210, 220 Wiring board

Claims

1. A laminated substrate having a plurality of wiring boards, each having an inorganic substrate containing glass, one or more insulating resin layers arranged to cover at least a portion of the inorganic substrate containing glass, and wiring portions arranged on at least one surface of the inorganic substrate containing glass and the insulating resin layers, wherein at least one of the first surface and the second surface opposite the first surface of the inorganic substrate containing glass is chemically strengthened.

2. The laminated substrate according to claim 1, wherein at least one of the first surface and the second surface includes an exposed portion, and the thickness of the chemically strengthened layer in the exposed portion is different from the thickness of the chemically strengthened layer in the portion where the insulating resin layer or the wiring portion is located.

3. A wiring board comprising: an inorganic substrate containing glass; one or more insulating resin layers disposed to cover at least a portion of the inorganic substrate containing glass; and wiring portions disposed on at least one surface of the inorganic substrate containing glass and the insulating resin layers, wherein at least one of the first surface and the second surface opposite the first surface of the inorganic substrate containing glass is chemically strengthened.

4. The wiring substrate according to claim 3, wherein at least one of the first surface and the second surface includes an exposed portion, and the thickness of the chemically strengthened layer in the exposed portion is different from the thickness of the insulating resin layer or the chemically strengthened layer in the portion where the wiring portion is arranged.

5. The wiring substrate according to claim 3, wherein the thickness of the inorganic substrate is in the range of 0.01 mm to 5 mm, and the thickness of the chemically strengthened layer is in the range of 1 μm to 30 μm.

6. The wiring board according to claim 3, wherein when the thickness of the chemically strengthened layer is X and the thickness of the inorganic substrate containing the glass is Y, Y = A × X, where A is 2 or more and 5000 or less.

7. A method for manufacturing a laminated substrate, comprising: chemically strengthening at least one of a first surface and a second surface opposite to the first surface of an inorganic substrate containing glass; arranging patterned wiring portions on at least one of the first surface and the second surface of the inorganic substrate containing glass; and arranging one or more insulating resin layers so as to cover at least a portion of the inorganic substrate containing glass.

8. A method for manufacturing a wiring board, comprising: manufacturing a laminated substrate by the method for manufacturing a laminated substrate described in claim 7; and dicing the obtained laminated substrate.

9. The method for manufacturing a wiring substrate according to claim 8, wherein at least one of the first surface and the second surface includes an exposed portion, and in the process of chemical strengthening, the thickness of the chemically strengthened layer in the exposed portion is different from the thickness of the chemically strengthened layer in the portion where the insulating resin layer or the wiring portion is arranged.

10. The method for manufacturing a wiring substrate according to claim 8 or 9, wherein the thickness of the inorganic substrate is in the range of 0.01 mm to 5 mm, and the thickness of the chemically strengthened layer is in the range of 1 μm to 30 μm.

11. A method for manufacturing a wiring board according to claim 8 or 9, wherein, when the thickness of the chemically strengthened layer is X and the thickness of the inorganic substrate containing the glass is Y, Y = A × X, where A is 2 or more and 5000 or less.

12. A semiconductor package having a wiring board as described in any one of claims 3 to 6.

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