Micro-pixel display device and method for manufacturing meta-absorber-based black matrix of micro-pixel display device

Abstract

The present invention relates to a micro-pixel display device and a method for manufacturing a meta-absorber-based black matrix of a micro-pixel display device. The micro-pixel display device according to the present invention is characterized by comprising a meta-absorber-based black matrix, which includes: a light-reflecting metal layer formed of a metal material that reflects light; a light-transmitting non-metal insulation layer composed of a light-transmitting non-metal insulating material and formed on the light-reflecting metal layer; and a metal nano structure layer, which is composed of a light-reflecting metal material and formed in a black matrix region that separates sub-pixels from each other on the light-transmitting non-metal insulation layer and in which nano structures of different sizes and having different resonant wavelengths in the broadband of visible light are arranged and spaced apart from each other.

Description

Micropixel display device and method for fabricating a metaabsorber-based black matrix of a micropixel display device

[0001] The present invention relates to a micropixel display device and a method for manufacturing a black matrix based on a meta-absorber of the micropixel display device.

[0002] More specifically, the present invention relates to a micropixel display device having high resolution with several micropixels, wherein a metaabsorber-based black matrix operating broadband in the visible light band without polarization dependence is positioned between subpixels to reduce optical interference, thereby increasing color purity and luminous efficiency, and a method for fabricating a metaabsorber-based black matrix of a micropixel display device.

[0003] Micro-OLEDs for Near-Eye Displays require high resolution to reduce the screen door effect, which causes eye strain and dizziness. To achieve high resolution, it is necessary to fabricate micro-driving circuits using CMOS processes, and for this purpose, technology is evolving into OLED on Silicon (OLEDoS) using silicon substrates. Accordingly, a top-emission display method has been adopted, which is also a choice made to compensate for the decrease in brightness that occurs in proportion to the miniaturization of pixel size.

[0004] As shown in Fig. 1, OLEDoS displays can be broadly classified into White OLEDoS, which applies color filters, and Direct RGB OLEDoS, which consists of RGB subpixels. The basic structure of White-OLEDoS and RGB-OLEDoS is manufactured by placing an annode electrode on a CMOS backplane (OLED driving transistor) on a silicon substrate and then depositing each of the illustrated layers. At this time, conventionally, a barrier separating the subpixels, called a PDL (Pattern Definition Layer), i.e., a barrier with a black matrix function, is formed before the deposition of the light-emitting layer to prevent light interference between pixels.

[0005] Meanwhile, there are limitations to compensating for the decrease in brightness caused by the pixel area becoming smaller due to the high resolution of Micro OLEDs and OLEDoS using the Top-emission method. To address this, methods to increase brightness by inducing resonance in the cavity space are being studied (Non-patent literature 1, 2, Patent literature 1, 2).

[0006] However, as illustrated in Fig. 2, this method inevitably results in step differences between subpixels due to differences in cavity lengths according to visible light wavelengths. As a solution to this, a White-OLEDoS research paper has been published that applies a metasurface with different nanostructure designs for RGB subpixels (Non-patent Literature 3).

[0007] The technology disclosed in Non-Patent Literature 3 is a technology that enables color realization without color filters and the implementation of ultra-high resolution (over 10,000 ppi) full-color OLED displays without Fine Metal Masks (FMMs) by designing and fabricating an RGB micro-cavity resonance structure with the same thickness in a structure with maximized light efficiency. Furthermore, the technology of Non-Patent Literature 3 is characterized by inducing horizontal Ag-low refractive index material-Ag nanogap resonance between Ag pillars and the low refractive index material filling the space between the Ag pillars. However, this structure has a potential disadvantage in that it requires an additional process, as a planarization layer is essential to flatten the nanogap height during the display fabrication process. Additionally, since most of the near-field is exposed to the outside, there is a problem that the resonance wavelength is vulnerable to changes in the external refractive index (changes in the refractive index of the planarization layer). Moreover, in implementing the nanogap, there is a problem that the resonance wavelength is sensitive to changes in the angle of incidence of light, and it is also technically difficult to implement a minimum nanogap width of 100 nm or less. Even if a nanogap width of 100 nm or less can be obtained, there is a limitation in that it is difficult to fabricate subpixels with a size of 1.2 µm or less due to weak localization and confinement of the near field.

[0008] Therefore, a Metal-Insulator-Metal (MIM) metastructure that is less sensitive to changes in the angle of incidence of light can be used (Non-patent literature 4, 5, 6). It is known that applying a MIM metastructure has the advantage of overcoming the aforementioned problem of horizontal gap resonance and facilitating the application of ultra-high resolution meta-displays. However, when fabricating high-resolution ultra-high resolution OLED displays using conventional metastructures that include horizontal resonance in the form of nano-dots and vertical resonance in the form of MIM, a problem may arise where colors mix because the spacing between subpixels is too close.

[0009] Meanwhile, in order to achieve high resolution in a display using a structure with a PDL as shown in Fig. 1, a method is required to minimize the width of the PDL (Pattern Defined Layer) to increase luminous efficiency while simultaneously solving the problem of reduced color reproduction rate and contrast ratio caused by optical interference between subpixels (Patent Document 3). However, conventional PDLs are implemented through a photolithography process on black matrix materials, but there are limitations in reducing the width of the PDL due to light absorption and diffraction by the photomask (Non-patent Documents 7, 8, 9), and the thickness of the PDL is several micrometers, which is relatively thick compared to organic and inorganic light-emitting layers with a thickness of several hundred to tens of nanometers. In addition, since the subpixel size of a Micro-OLED for achieving ultra-high resolution is required to be about 1 µm, it is necessary to reduce the thickness of the PDL to the level of several hundred nanometers. At this time, even if it is possible to fabricate a PDL with a thickness of several hundred nanometers, a thinner PDL thickness causes light leakage, leading to optical interference problems between subpixels. Therefore, when following conventional structures and process methods, there are difficulties in implementing the ultra-fine PDL barriers between subpixels required for ultra-high resolution Micro-OLEDs.

[0010] As a method to minimize optical interference between subpixels, it has been reported that optical interference can be reduced by increasing optical straightness through the application of the metasurface and cavity described above (Non-patent literature 10, 11, 12).

[0011] Non-patent document 10, based on Micro-LED research, revealed that the above metasurface structure can enhance linearity or control the angle of refraction by cohering coherent light, but in the case of non-coherent light emission, linearity can be enhanced by forming light emission coherence under resonant conditions in the cavity space. Non-patent document 11 presented the characteristics of the Top-mirror and Bottom-mirror forming the resonant cavity space in Micro-LEDs, as well as material selection and design directions. The Bottom-mirror must fully reflect the light energy emerging from the light-emitting layer to reduce light loss, while the Top-mirror must possess appropriate reflection characteristics to transmit some of the light and return some to the Bottom-mirror. By strengthening this resonant mechanism, coherence and phase control by the metasurface structure, and consequently, optical linearity, can be enhanced. In Non-patent Literature 12, the bottom mirror was replaced with a lattice-matched dispersion Bragg mirror (DBR) composed of 11 pairs of nanoporous GaN and undoped GaN to reduce light leakage from the substrate, and as a result, a high external quantum efficiency of 9% and a full width at half maximum of 25 nm were achieved in the 500 nm band. In Non-patent Literature 13, an FP Cavity was introduced into the Micro-LED and the bottom mirror was configured with a DBR formed by alternating deposition of SiO2 / TiO2 to increase optical directionality and secure a dispersion angle of 78.7°.

[0012] However, in order to minimize optical interference that can be amplified in ultra-high resolution Micro-OLEDs and OLEDoS, it will be necessary to take active measures such as installing a black matrix that more directly blocks optical interference in the boundary areas between subpixels.

[0013] In this patent, we intend to disclose technical details regarding a micropixel display device having a structure of a new inter-subpixel partition (i.e., a black matrix) applicable to a meta-cavity-based Micro-OLED in a manner different from the prior art, and a method for manufacturing the black matrix constituting the micropixel display.

[0014] [Prior Art Literature]

[0015] [Patent Literature]

[0016] (Patent Document 1) <Patent Document 1> Republic of Korea Published Patent No. 10-2022-0046596, Common RGB Resonant Layer for OLED Display

[0017] (Patent Document 2) <Patent Document 2> Republic of Korea Published Patent No. 10-2014-0089260, Organic Light Emitting Diode Micro-Cavity Structure and Method for Manufacturing the Same

[0018] (Patent Document 3) <Patent Document 3> Republic of Korea Published Patent No. 10-2023-0112668, Selective Filler Patterning by Lithography for OLED Light Extraction

[0019] [Non-patent literature]

[0020] (Non-patent document 1) <Non-patent document 1> Marcus Ossiander, et al, “Metasurface-stabilized optical microcavities” Nature Communications 14, 1114 (2023)

[0021] (Non-patent Document 2) <Non-patent Document 2> Jing-Qi Wang, et al, “Micro-resonant cavity organic light-emitting diode with high refractive index contrast dielectric metasurfaces for naked-eye 3D display” Optics Communications 532, 129251 (2023)

[0022] (비특허문헌 3)<비특허문헌 3> Won-Jae Joo, et al,“Metasurface-driven OLED displays beyond 10,000 pixels per inch” Science 370, 459-463 (2020)

[0023] (비특허문헌 4)<비특허문헌 4> Kaizhu Liu, et al., “High efficiency design of metal-insulator-metal metasurface by ResNets-10”, Appl. Phys. Lett. 123, 211705 (2023)

[0024] (비특허문헌 5)<비특허문헌 5> Jiaqi Zhang, et al., “Electrical tuning of metal-insulator-metal metasurface with electro-optic polymer”, Appl. Phys. Lett. 113, 231102 (2018)

[0025] (비특허문헌 6)<비특허문헌 6> Alexander Dorodnyy, et al., “Design of CMOS-compatible metal&-insulator-metal metasurfaces via extended equivalent-circuit analysis”, Scientific Reports volume 10, Article number: 17941 (2020)

[0026] (비특허문헌 7)<비특허문헌 7> Wei-Kai Lee et al,“Three-dimensional pixel configurations for optical outcoupling of OLED displays―optical simulation”J Soc Inf Display. 2019; 27:273-284.

[0027] (비특허문헌 8)<비특허문헌 8> Genggongwo Shi et al,“Black Photoresist for Patterning Pixel Define Layer of Organic Light Emitting Diode with Polyimide as Thermal Stabilizer”Materials Sciences and Applications, 2018, 9, 554-564

[0028] (비특허문헌 9)<비특허문헌 9> Linya Chen et al, “Optical modeling and analysis of pixel organic light-emitting diode using a mixed-level algorithm considering light leakage effects”Thin Solid Films 769 (2023) 139741

[0029] (비특허문헌 10)<비특허문헌 10> Zhou, L.M.; Ren, B.C.; Zheng, Z.W.; Ying, L.Y.; Long, H.; Zhang, B.P. “Fabrication and Characterization of GaN-Based Resonant-Cavity Light-Emitting Diodes with Dielectric and Metal Mirrors”. ECS. J. Solid State Sci. Technol. 2018, 7, 34-37

[0030] (비특허문헌 11)<비특허문헌 11> Delbeke, D.; Bockstaele, R.; Bienstman, P.; Baets, R.; Benisty, H.“High-Efciency Semiconductor Resonant-Cavity Light-Emitting Diodes”, A Review. IEEE J. Sel. Top. Quantum Electron. 2002, 8, 189-206

[0031] (Non-patent Document 12) <Non-patent Document 12> Bai, J.; Cai, Y.; Feng, P.; Fletcher, P.; Zhu, C.; Tian, ​​Y.; Wang, T. Ultrasmall, “ultracompact and ultrahigh efcient InGaN micro light emitting diodes (μLEDs) with narrow spectral line width”. ACS Nano 2020, 14, 6906-6911.

[0032] (Non-patent Literature 13) <Non-patent Literature 13> Huang, J.; Tang, M.; Zhou, B.; Liu, Z.; Yi, X.; Wang, J.; Li, J.; Pan, A.; Wang, L. “GaN-based resonant cavity micro-LEDs for AR application”. Appl. Phys. Lett. 2022, 121, 201104.

[0033] The problem that the present invention aims to solve is to provide a micropixel display device capable of increasing color purity and luminous efficiency by lowering optical interference, in an ultrathin film microdisplay device having high resolution with several micropixels, by positioning a metaabsorber-based black matrix that operates broadband in the visible light band without polarization dependence in the inter-subpixel region.

[0034] In addition, the present invention aims to provide a method for fabricating a metaabsorber-based black matrix applied to the micropixel display device.

[0035] The problems that the present invention aims to solve are not limited to those mentioned above, and other unmentioned problems will be clearly understood by those skilled in the art to which the present invention belongs from the description below.

[0036] The above objective can be achieved by a micropixel display device characterized by comprising, according to the present invention, a light-reflecting metal layer formed of a light-reflecting metallic material; a light-transmitting nonmetal insulating layer formed on the light-reflecting metal layer using a light-transmitting nonmetal insulating material; and a metal nanostructure layer formed in a black matrix region separating subpixels on the light-transmitting nonmetal insulating layer, wherein nanostructures of different sizes having different resonant wavelengths in a broadband of visible light are spaced apart and arranged using a light-reflecting metallic material.

[0037] Here, the metal nanostructure layer may have nanostructures of different sizes arranged periodically.

[0038] Here, the metal nanostructure layer may have nanostructures of different sizes spaced apart at equal intervals.

[0039] Here, the metal nanostructure layer may additionally have nanostructures of a certain size arranged at equal intervals in the space between nanostructures of different sizes that are spaced apart at equal intervals.

[0040] Here, the light-reflecting metal layer and the metal nanostructure layer can be formed from any one of silver (Ag), aluminum (Al), and gold (Au).

[0041] Here, the light-transmitting non-metallic insulating layer can be formed of silicon dioxide (SiO2).

[0042] Here, it is preferable that the light-reflecting metal layer be formed with a thickness that blocks visible light transmission.

[0043] Here, the nanostructure may have a shape protruding in any one of a circular, square, or cross shape.

[0044] Here, the metaabsorber-based black matrix may further include a planarization layer covering the metal nanostructure layer with a loss dielectric material.

[0045] In addition, the above objective can be achieved by a method for fabricating a metaabsorber-based black matrix of a micropixel display device according to the present invention, comprising the steps of: depositing a light-reflecting metal layer on a base substrate using a light-reflecting metal material; depositing a light-transmitting nonmetal insulating layer on the light-reflecting metal layer using a light-transmitting nonmetal insulating material; and forming a metal nanostructure layer in which nanostructures of different sizes having different resonant wavelengths in a broadband of visible light are spaced apart and arranged using a light-reflecting metal material in a black matrix region separating subpixels on the light-transmitting nonmetal insulating layer.

[0046] Here, the step of forming the metal nanostructure layer may include: coating a lift-off layer on the light-transmitting non-metal insulating layer; forming a metal thin film layer on the surface of a nanoimprint mold in which the pattern of the metal nanostructure layer is formed as an intaglio, thereby transferring the metal thin film layer to the lift-off layer; etching the lift-off layer using the transferred metal thin film layer as a mask; depositing a metal material that forms the metal nanostructure layer; and lifting off the lift-off layer.

[0047] Here, the nanoimprint mold can be fabricated as an intaglio by replicating a relief pattern corresponding to the nanostructure using an acrylate-based UV-curable mold resin.

[0048] Here, the method may further include the step of forming a flattened layer by covering the metal nanostructure layer with a loss dielectric material.

[0049] In addition, the above objective can be achieved by a micropixel display device characterized by comprising, according to the present invention, a light-reflecting metal layer formed of a light-reflecting metal material; a light-transmitting nonmetal insulating layer formed on the light-reflecting metal layer with a light-transmitting nonmetal insulating material; and a metal nanostructure layer formed in a black matrix region separating subpixels on the light-transmitting nonmetal insulating layer, wherein nanostructures are arranged in a random size and at random intervals using a light-reflecting metal material.

[0050] Here, the light-reflecting metal layer and the metal nanostructure layer can be formed from any one of silver (Ag), aluminum (Al), and gold (Au).

[0051] Here, the light-transmitting non-metallic insulating layer can be formed of silicon dioxide (SiO2).

[0052] Here, the light-reflecting metal layer can be formed with a thickness that blocks visible light transmission.

[0053] Here, the metaabsorber-based black matrix may further include a planarization layer covering the metal nanostructure layer with a loss dielectric material.

[0054] In addition, the above objective can be achieved by a method for fabricating a meta-absorber-based black matrix of a micropixel display device according to the present invention, comprising the steps of: depositing a light-reflecting metal layer with a light-reflecting metal material on a base substrate; depositing a light-transmitting non-metal insulating layer with a light-transmitting non-metal insulating material on the light-reflecting metal layer; and forming a metal nanostructure layer in which nanostructures are spaced apart at random sizes and random intervals, wherein the step of forming the metal nanostructure layer comprises: forming a metal thin film layer with a metal material on the light-transmitting non-metal insulating layer; and forming the metal nanostructure layer by self-assembling the metal thin film layer using a local heating technique using a Focused Ion Beam (FIB) or a laser.

[0055] Here, the method may further include the step of forming a flattened layer by covering the metal nanostructure layer with a loss dielectric material.

[0056] In addition, the above objective can be achieved by a micropixel display device characterized by comprising, according to the present invention, a light-reflecting metal layer formed of a light-reflecting metal material; a loss dielectric layer formed on the light-reflecting metal layer with a loss dielectric material; and a light-transmitting nonmetal insulating layer formed on the loss dielectric layer with a light-transmitting nonmetal insulating material.

[0057] In addition, the above objective can be achieved by a micropixel display device characterized by comprising, according to the present invention, a light-reflecting metal layer formed of a light-reflecting metal material; and a loss dielectric barrier formed of a loss dielectric material in a black matrix region separating subpixels on the light-reflecting metal layer.

[0058] Here, the structure may further include a metal nanostructure layer formed on the loss dielectric barrier and made of a light-reflecting metal material, wherein nanostructures are spaced apart and arranged.

[0059] Here, the above-mentioned loss dielectric material may be germanium (Ge).

[0060] Here, the light-reflecting metal layer can be formed from any one of silver (Ag), aluminum (Al), or gold (Au).

[0061] Here, the light-transmitting non-metallic insulating layer can be formed of silicon dioxide (SiO2).

[0062] Here, it is preferable that the light-reflecting metal layer be formed with a thickness that blocks visible light transmission.

[0063] In addition, the above objective can be achieved by a method for fabricating a metaabsorber-based black matrix of a micropixel display device, characterized in that, according to the present invention, the method comprises the steps of: depositing a light-reflecting metal layer on a base substrate using a light-reflecting metal material; forming a loss dielectric barrier in a black matrix region separating subpixels on the light-transmitting metal layer using a loss dielectric material; and forming a metal nanostructure layer on the loss dielectric barrier, wherein nanostructures are spaced apart using a light-reflecting metal material.

[0064] Here, the step of forming the loss dielectric barrier can be performed by a Deep UV exposure and development process.

[0065] Here, the step of forming the loss dielectric barrier can be performed through a nanoimprint process using a mask having a barrier pattern formed thereon.

[0066] Here, the step of forming the metal nanostructure layer may include: a step of exposing only the loss dielectric barrier with a mask; a step of forming a metal thin film layer with a metal material that forms the metal nanostructure layer on the loss dielectric barrier using an E-beam evaporation deposition process; and a step of forming the metal nanostructure layer by self-assembling the metal thin film layer using a local heating technique using a Focused Ion Beam (FIB) or a laser.

[0067] As described above, according to the present invention, in an ultra-high resolution ultra-thin micro-display device having a micro-sized pixel array, a meta-absorber-based black matrix that operates broadly in the visible light band without polarization dependence is positioned between subpixels, thereby reducing optical interference, increasing color purity, and increasing luminous efficiency, which is an advantage.

[0068] The effects of the present invention are not limited to the effects described above, and should be understood to include all effects that can be inferred from the configuration of the invention described in the detailed description of the invention or the claims.

[0069] Figure 1 is a diagram schematically illustrating the structure of White-OLEDoS and RGB-OLEDoS with conventional PDL partitions.

[0070] Figure 2 is a schematic diagram illustrating the structure of an RGB-OLEDDoS that increases brightness by inducing resonance in the existing cavity space.

[0071] FIG. 3 illustrates a plan view of a micropixel display device and a cross-sectional view of a metaabsorber-based black matrix according to a first embodiment of the present invention.

[0072] Figure 4 shows the FDTD simulation results of the visible band reflection and absorption spectra of a metaabsorber-based black matrix according to the arrangement of nanostructures in Figure 3.

[0073] Figure 5 illustrates a modified example of Figure 3 and the FDTD simulation results of the visible light band reflection and absorption spectra of the metaabsorber-based black matrix according to the same.

[0074] Figure 6 shows a schematic diagram of a micropixel display with the metaabsorber-based black matrix of Figure 3 applied, and the results of FDTD simulation of the electric field intensity distribution at xz.

[0075] Figure 7 shows a schematic diagram of a micropixel display with the metaabsorber-based black matrix of Figure 3 applied, and the results of FDTD simulation of the electric field intensity distribution in xy.

[0076] Figure 8 shows the results of FDTD simulation of the reflection spectrum according to x and y polarization and incident angle of the metaabsorber-based black matrix of Figure 3.

[0077] Figure 9 shows the results of FDTD simulation of the electric field intensity distribution when the meta-absorber-based black matrix of Figure 3 is applied to square and pentile diamond pixel structures.

[0078] Figure 10 is a diagram illustrating a method for manufacturing a metaabsorber-based black matrix in Figures 3 and 4.

[0079] FIG. 11 illustrates a plan view of a micropixel display device and a cross-sectional view of a metaabsorber-based black matrix according to a second embodiment of the present invention.

[0080] Figure 12 is a diagram illustrating a method for manufacturing a metaabsorber-based black matrix in Figure 11.

[0081] FIG. 13 illustrates a plan view of a micropixel display device and a cross-sectional view of a metaabsorber-based black matrix according to a third embodiment of the present invention.

[0082] Figure 14 shows the FDTD simulation results of the visible light band reflection and absorption spectra of the metaabsorber-based black matrix in Figure 13.

[0083] FIGS. 15 and FIGS. 16 respectively show a plan view of a micropixel display device and a cross-sectional view of a metaabsorber-based black matrix according to a modified example of FIG. 13.

[0084] FIG. 17 is a diagram illustrating a method for manufacturing a metaabsorber-based black matrix in FIG. 15 and FIG. 16.

[0085] Specific details of the embodiments are included in the detailed description and drawings.

[0086] The advantages and features of the present invention and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Throughout the specification, like reference numerals refer to like components.

[0087] Hereinafter, the present invention will be described with reference to the drawings illustrating a micropixel display device and a method for fabricating a metaabsorber-based black matrix of a micropixel display device according to embodiments of the present invention.

[0088] FIG. 3 illustrates a plan view of a micropixel display device and a cross-sectional view of a meta-absorber-based black matrix according to a first embodiment of the present invention; FIG. 4 illustrates the FDTD simulation results of the visible light band reflection and absorption spectra of the meta-absorber-based black matrix according to the arrangement of nanostructures in FIG. 3; FIG. 5 illustrates a modified example of FIG. 3 and the FDTD simulation results of the visible light band reflection and absorption spectra of the meta-absorber-based black matrix according to the same; FIG. 6 illustrates a schematic diagram of a micropixel display to which the meta-absorber-based black matrix of FIG. 3 is applied and the FDTD simulation results of the electric field intensity distribution at xz; FIG. 7 illustrates a schematic diagram of a micropixel display to which the meta-absorber-based black matrix of FIG. 3 is applied and the FDTD simulation results of the electric field intensity distribution at xy; FIG. 8 illustrates the FDTD simulation results of the reflection spectrum according to the x and y polarization and incident angle of the meta-absorber-based black matrix of FIG. 3; and FIG. 9 illustrates that the meta-absorber-based black matrix of FIG. 3 The results of FDTD simulation of the electric field strength distribution when applied to square and pentile diamond pixel structures are shown.

[0089] The micropixel display device according to the present invention relates to an ultra-high resolution display device in which a pixel array of several micrometers in size is formed, and in particular, the size of the subpixel is 1 μm or less, but the size of the pixel is not necessarily limited thereto.

[0090] A micropixel display device according to the first embodiment of the present invention may include a metaabsorber-based black matrix comprising a light-reflecting metal layer (110), a light-transmitting non-metal insulating layer (120), and a metal nanostructure layer (130).

[0091] The left side of FIG. 3 illustrates an arbitrary pixel structure shape in a micropixel display device comprising R, G, and B, with four subpixels arranged in a 2x2 matrix, and the right side of FIG. 3 illustrates a cross-sectional view of a black matrix based on a meta-absorption layer in a black matrix region that separates the subpixels.

[0092] The light-reflecting metal layer (110) can be formed as a thin film on a substrate. The light-reflecting metal layer (110) is formed from a metal material that reflects light. In this embodiment, it is formed from silver (Ag). The light-reflecting metal layer (110) may also be formed from aluminum (Al) or gold (Au). At this time, it is preferable that the light-reflecting metal layer (110) be formed with a thickness that blocks visible light transmission. In this embodiment, it is formed with a thickness of 100 nm.

[0093] A light-transmitting non-metallic insulating layer (120) is formed on a light-reflecting metal layer (110). It is preferable that the light-transmitting non-metallic insulating layer (120) be formed from a light-transmitting non-metallic insulating material. The light-transmitting non-metallic insulating layer (120) may be formed from an oxide-based insulating material. In this embodiment, it is formed from silicon dioxide (SiO2). Additionally, in this embodiment, the thickness of the light-transmitting non-metallic insulating layer (120) is formed to a thickness of 30 nm.

[0094] A metal nanostructure layer (130) is formed on a light-transmitting non-metal insulating layer (120) in a black matrix region separating the subpixels. The light-reflecting metal layer (110) and the light-transmitting non-metal insulating layer (120) can be formed over the entire pixel array region including the black matrix region between the subpixels, and the metal nanostructure layer (130) is fabricated with a design capable of implementing a black matrix and is positioned in the black matrix region between the subpixels.

[0095] The metal nanostructure layer (130) is formed from a metal material that reflects light. Like the light-reflecting metal layer (110), it can be formed from any one of silver (Ag), aluminum (Al), or gold (Au). In this embodiment, it is formed from silver (Ag), and the nanostructures constituting the metal nanostructure layer (130) can be formed with a thickness of 50 nm.

[0096] At this time, the metal nanostructure layer (130) may be formed in a form in which nanostructures of different sizes are spaced apart, as shown in FIG. 4. Each nanostructure of different sizes, formed from a light-reflecting metal material, has a different resonant wavelength in the broadband of visible light. At this time, the sizes of the nanostructures of different sizes may be designed sizes. Furthermore, as described below, the nanostructures may be spaced apart at random intervals with random sizes.

[0097] In this embodiment, the nanostructure may be in the shape of a circularly protruding disk, but is not limited thereto and may be in the shape of a square or cross-shaped protrusion.

[0098] As shown in (2) of FIG. 4, when nanodiscs with a diameter of 100 nm are arranged with a period of 200 nm in the x direction and 1 μm in the y direction, the absorption is high only in a specific wavelength range of the visible light region. However, as shown in (3) of FIG. 4, when nanodiscs with diameters of 70, 80, 100, 110, and 130 nm are additionally arranged in a line with a center of a 100 nm nanodisc at an equal interval of 200 nm, it is possible to absorb light of a wider range of wavelengths compared to arranging nanodiscs with the same diameter.

[0099] That is, the metal nanostructure layer (130) may be in the form of nanostructures of different sizes arranged periodically spaced apart. Additionally, the metal nanostructure layer (130) may be in the form of nanostructures of different sizes arranged at equal intervals spaced apart.

[0100] Furthermore, as illustrated in (4) of FIG. 4, nanostructures of a certain size can be additionally arranged at equal intervals in the space between nanostructures of different sizes that are spaced apart at equal intervals in (3) of FIG. 4. That is, nanostructures of a certain size can be additionally placed at the center of the square space formed by the center points of four adjacent nanostructures. In this embodiment, nanodisks having a diameter of 55 nm are additionally arranged. At this time, compared to (3) of FIG. 4, the absorption rate in the short wavelength band of 450 to 550 nm is increased, allowing light with a wider wavelength to be absorbed with high efficiency, thereby forming a metaabsorber-based black matrix having an average absorption rate of about 95% in the visible light band (400 to 750 nm).

[0101] In particular, for ultra-high resolution display devices with subpixel sizes of 1㎛ or less, the width of the black matrix region is 200 to 400nm. By forming a black matrix based on the aforementioned structure, which operates broadly in the visible light band and has a nano-sized thickness, in the black matrix region between subpixels, light interference can be reduced to increase color purity and increase luminous efficiency.

[0102] FIG. 5 illustrates a metaabsorber-based black matrix designed with a different material than FIG. 4. In FIG. 5, a light-reflecting metal layer (110) and a metal nanostructure layer (130) are formed with aluminum (Al) and a light-transmitting non-metal insulating layer (120) is formed with silicon dioxide (SiO2), respectively, with the thicknesses shown. At this time, similar to FIG. 4, nanodisks with diameters of 80, 90, 100, 130, and 150 nm are arranged in a line in a unit grid having a period of 200 nm in the x direction and 1 μm in the y direction, and nanodisks with a diameter of 75 nm are additionally arranged between these nanodisks with a period of 200 nm in the x and y directions, thereby forming a metaabsorber-based black matrix having an average absorption of about 91% in the visible light band.

[0103] At this time, a flattening layer (160) can be additionally formed by depositing a thin film of a lossy dielectric material to cover and flatten the metal nanostructure layer (130). Ge can be used as the lossy dielectric material.

[0104] In the subpixel area, light-emitting structures such as an anode electrode, a cathode electrode, a HIL layer, an HTL layer, an EML layer, and an ETL layer constituting the White-OLEDoS or RGB-OLEDoS shown in FIG. 1 may be formed.

[0105] The resonant wavelength of the above-described structure can be determined by the effective refractive index of the metal-nonmetal-metal waveguide mode formed by three layers of a light-reflecting metal layer (110), a light-transmitting nonmetal insulating layer (120), and a metal nanostructure layer (130), and the diameter (size) of the metal structure forming the metal nanostructure layer (130). Therefore, when metal nanodisks of different diameters are mixed, various resonant wavelengths and the resulting reflectance and absorption can be obtained. Since the absorption of light energy is determined by the gap surface plasmon polariton resonance phenomenon of the metal-nonmetal-metal waveguide mode, the absorption resonant wavelength is affected by the thickness of each layer and the diameter of the top metal nanodisk.

[0106] Figures 6 and 7 illustrate a schematic diagram of a micropixel display with a metaabsorber-based black matrix according to the present invention and the results of FDTD simulation of the electric field intensity distribution.

[0107] As shown in Fig. 6, the thickness of the OLED, ITO, and planarization layer is designed under micro-resonance effect conditions based on the blue light wavelength (450 nm), so that light is reflected multiple times from the upper cathode electrode and the lower metal substrate, and an electric field distribution is formed due to the micro-resonance effect.

[0108] At this time, when looking at the electric field intensity distribution in the xz plane, it can be seen that standing waves are generated in the pixel area due to high reflectivity, and light is absorbed in the area where the meta-absorber-based black matrix according to the present invention is applied, showing a weak electric field intensity distribution. In addition, as shown in Fig. 7, when the meta-absorber-based black matrix according to the present invention is periodically distributed to distinguish between pixels in the xy plane, when looking at the electric field intensity distribution of one period, it can be seen that the black matrix area shows a weak electric field intensity, while the pixel area shows a strong electric field intensity.

[0109] When light is incident on a metal-nonmetal-metal resonator, gap surface plasmon polaritons are generated at the interface between the metal and the nonmetal, and they resonate by being reflected several times at the horizontal end of the metal-nonmetal-metal waveguide mode according to the polarization direction, thus having polarization dependency. However, as in the present invention, when the upper metal layer is formed in the shape of a nanodisk, the gap surface plasmon polaritons formed in the nonmetal layer in the polarization direction are reflected at the end of the nanodisk, reducing light energy attenuation by the metal, increasing resonance efficiency, and becoming polarization-independent.

[0110] Figure 8 illustrates the results of FDTD simulation of the reflection spectrum under conditions where x and y polarizations are incident at various angles on a meta-absorber-based black matrix according to the present invention. It can be confirmed that there is no significant difference in the reflection spectrum when x and y polarizations are incident perpendicularly, and that there is no dependence on oblique incidence when each polarization is incident obliquely in the x and y directions, except for y polarization incident at a high angle in the y direction. According to the present invention, the meta-absorber-based black matrix of the aforementioned structure has an anisotropic structure in the y direction, so there is a variation in the reflection spectrum when y polarization is incident obliquely at a high angle in the y direction, but no variation is observed at each RGB wavelength (450, 520, 620 nm).

[0111] Reflecting the effects of resonance wavelength and polarization independence, the present invention combines nanodiscs of different diameters and selects the diameters to maximize light absorption across the broadband of the visible light range. At this time, nanodiscs with different diameters are arranged in a line at regular intervals to achieve broadband absorption resonance wavelengths. Additionally, to increase absorption in the short-wavelength visible light range (450–550 nm), metal nanodiscs having resonance wavelengths in that range may be additionally placed between the metal nanodiscs arranged in a line. Furthermore, to minimize interference between the metal nanodiscs designed with the selected diameters, the metal nanodiscs are arranged in a line at equal intervals.

[0112] Meanwhile, as shown in FIG. 9, FDTD simulations were performed to obtain an xy-plane electric field intensity distribution by applying the meta-absorber-based black matrix according to the present invention to square and pentile diamond pixel structures, and it was confirmed that the meta-absorber-based black matrix according to the present invention can operate in various micro-display RGB pixel structures.

[0113] Hereinafter, a method for manufacturing a metaabsorber-based black matrix of a micropixel display device according to the first embodiment of the present invention, described with reference to FIGS. 3 to 9, will be described.

[0114] Figure 10 is a diagram illustrating a method for manufacturing a metaabsorber-based black matrix in Figures 3 and 4.

[0115] A method for fabricating a metaabsorber-based black matrix of a micropixel display device according to one embodiment of the present invention may include the steps of: depositing a light-reflecting metal layer (110) on a base substrate using a light-reflecting metal material; depositing a light-transmitting non-metal insulating layer (120) on the light-reflecting metal layer (110) using a light-transmitting non-metal insulating material; and forming a metal nanostructure layer in which nanostructures of different sizes having different resonant wavelengths in a wide visible light band are spaced apart and arranged using a light-reflecting metal material in a black matrix region that separates subpixels on the light-transmitting non-metal insulating layer (120).

[0116] As shown in (1) of FIG. 10, a light-transmitting metal material is deposited on a substrate to form a light-reflecting metal layer (110), and then a light-transmitting non-metal insulating material is deposited on the light-reflecting metal layer (110) to form a light-transmitting non-metal insulating layer (120). At this time, the light-reflecting metal layer (110) and the light-transmitting non-metal insulating layer (120) can be formed over the entire pixel array area including a subpixel area and a black matrix area between subpixels.

[0117] At this time, the light-reflecting metal material forming the light-reflecting metal layer (110) may be any one of silver (Ag), aluminum (Al), or gold (Au). In addition, it is preferable to deposit the light-reflecting metal layer (110) to have a thickness of 100 nm or more so that visible light transmission can be completely blocked.

[0118] The light-transmitting non-metallic insulating layer (120) can be formed from an oxide-based insulating material, and in this embodiment, it is formed from silicon dioxide (SiO2). At this time, the deposition thickness of the light-transmitting non-metallic insulating layer (120) may vary depending on the visible light broadband absorption design.

[0119] Next, steps (2) to (7) of FIG. 10 illustrate the step of forming a metal nanostructure layer (130). First, a lift-off layer (140) is coated on a light-transmitting non-metal insulating layer (120) (Fig. 10 (2)). The lift-off layer (140) facilitates lift-off later.

[0120] Next, a metal thin film layer (152) is formed on the surface of a nanoimprint mold (150), and the metal thin film layer (152) is transferred onto a lift-off layer (140) ((3) of FIG. 10).

[0121] As illustrated in the square box of FIG. 10, a pattern of the metal nanostructure layer (130) to be formed is formed in intaglio on the nanoimprint mold (150). That is, a pattern according to the size (diameter) and arrangement of the metal nanostructures of different sizes spaced apart as described above can be formed in intaglio on the nanoimprint mold (150). The nanoimprint mold (150) can be manufactured by replicating the pattern on an acrylate-based UV-curable mold resin (151) using a nano-pattern mask produced on a silicon substrate by semiconductor lithography as a mother substrate.

[0122] A metal thin film layer (152) is formed on the surface of the nanoimprint mold (150) using an E-Beam evaporation deposition method, and a release film (not shown) can be additionally formed on the surface of the nanoimprint mold (150) by vapor deposition so that the deposited metal thin film layer (152) can be easily released during transfer. The nanoimprint mold (150) on which the metal thin film layer (152) is formed can be pressed onto the lift-off layer (140) to transfer the metal thin film layer (152) onto the lift-off layer (140) ((4) of FIG. 10).

[0123] At this time, the transferred metal thin film layer (152) serves as an etching mask during the etching of the lift-off layer (140) ((5) of FIG. 10).

[0124] Next, a metal material forming a nanostructure is deposited (6 of FIG. 10), and the lift-off layer (140) is lifted off to remove the lift-off layer (140), thereby forming a metal nanostructure layer (130) formed with a predetermined pattern of nanostructures on a light-transmitting non-metal insulating layer (120) as in FIG. 10 (7).

[0125]

[0126] Hereinafter, a micropixel display device according to a second embodiment of the present invention and a method for manufacturing a metaabsorber-based black matrix included therein will be described.

[0127] FIG. 11 illustrates a plan view of a micropixel display device and a cross-sectional view of a metaabsorber-based black matrix according to a second embodiment of the present invention.

[0128] In the following description, the differences from the first embodiment described above will be explained with reference to FIGS. 3 to 9.

[0129] A micropixel display device according to a second embodiment of the present invention may include a metaabsorber-based black matrix comprising a light-reflecting metal layer (110), a light-transmitting non-metal insulating layer (120), and a metal nanostructure layer (130).

[0130] The light-reflecting metal layer (110) and the light-transmitting non-metallic insulating layer (120) are the same as described above. That is, the light-reflecting metal layer (110) can be formed from any one of silver (Ag), aluminum (Al), or gold (Au), which are metal materials that reflect light. At this time, it is preferable that the light-reflecting metal layer (110) be formed with a thickness that blocks the transmission of visible light. In addition, the light-transmitting non-metallic insulating layer (120) is formed on the light-reflecting metal layer (110) and can be formed from a light-transmitting non-metallic insulating material such as silicon dioxide (SiO2).

[0131] In this embodiment, the metal nanostructure layer (130) may have nanostructures spaced apart at random sizes and random intervals. In the previously described embodiment, nanostructures of different designed sizes are arranged at regular intervals, but in this embodiment, nanostructures of randomly manufactured sizes are arranged at random intervals. The metal nanostructure layer (130) may be formed from any one of silver (Ag), aluminum (Al), or gold (Au), just as in the previously described first embodiment.

[0132] In addition, similar to the first embodiment described above, a flattening layer (160) can be additionally formed to flatten the metal nanostructure layer (130) by depositing a thin film of a loss dielectric material.

[0133] FIG. 12 is a diagram illustrating a method for manufacturing a metaabsorber-based black matrix in FIG. 11. The present embodiment differs in that, rather than forming nanostructures of designed size and spacing as in FIG. 10, nanostructures of random size are arranged at random intervals. Accordingly, the steps of depositing a light-reflecting metal layer (110) with a light-reflecting metal material on a base substrate and depositing a light-transmitting non-metal insulating layer (120) with a light-transmitting non-metal insulating material on the light-reflecting metal layer (110) are identical to those described above with reference to FIG. 10.

[0134] After forming the light-reflecting metal layer (110) and the light-transmitting non-metal insulating layer (120) as described above with reference to FIG. 10, a metal thin film layer is formed with a metal material to form a metal nanostructure layer (130) on the light-transmitting non-metal insulating layer (120) as shown in (1) of FIG. 12. At this time, the metal thin film layer can be formed from any one of silver (Ag), aluminum (Al), or gold (Au). At this time, it is preferable that the metal thin film layer is formed only in the black matrix region, rather than in all regions on the light-transmitting non-metal insulating layer (120).

[0135] Next, when the metal thin film layer is annealed using a local heating technique with a FIB (Focused Ion Beam) or a laser, the metal thin film layer can be self-assembled into clusters by the surface tension of the material to form metal nanostructures randomly distributed in random sizes (2 of FIG. 12).

[0136] Furthermore, a flattening layer (160) can be additionally formed to flatten the metal nanostructure layer (130) by depositing a thin film of a loss dielectric material. The loss dielectric material may be germanium (Ge) ((3) of FIG. 12).

[0137]

[0138] Hereinafter, a micropixel display device according to the third embodiment of the present invention and a method for manufacturing a metaabsorber-based black matrix included therein will be described.

[0139] FIG. 13 illustrates a plan view of a micropixel display device and a cross-sectional view of a metaabsorber-based black matrix according to a third embodiment of the present invention, FIG. 14 illustrates the FDTD simulation results of the visible light band reflection and absorption spectra of the metaabsorber-based black matrix in FIG. 13, and FIG. 15 and FIG. 16 illustrate a plan view of a micropixel display device and a cross-sectional view of a metaabsorber-based black matrix according to a modified example of FIG. 13, respectively.

[0140] In this embodiment, a loss dielectric layer (220) or a loss dielectric barrier (320) made of a loss dielectric material may be formed in a metaabsorber-based black matrix.

[0141] As illustrated in FIG. 13, a micropixel display device according to a third embodiment of the present invention may be configured to include a metaabsorber-based black matrix comprising a light-reflecting metal layer (210), a loss dielectric layer (220), and a light-transmitting non-metal insulating layer (230).

[0142] The light-reflecting metal layer (210) is formed as a thin film on a substrate. The light-reflecting metal layer (210) is formed from a metal material that reflects light. The light-reflecting metal layer (210) can be formed as a thin film by deposition. In this embodiment, it is formed from aluminum (Al). The light-reflecting metal layer (210) may also be formed from silver (Ag) or gold (Au). At this time, it is preferable that the light-reflecting metal layer (210) be formed with a thickness that blocks visible light transmission.

[0143] The loss dielectric layer (220) may be formed with a loss dielectric material on the light-reflecting metal layer (210). In this embodiment, the loss dielectric material may be germanium (Ge). The loss dielectric layer (220) may be formed by depositing a thin film of a designed thickness.

[0144] The light-transmitting non-metallic insulating layer (230) is formed as a thin film of designed thickness on the loss dielectric layer (220). The light-transmitting non-metallic insulating layer (230) is preferably formed of a light-transmitting and non-metallic insulating material. The light-transmitting non-metallic insulating layer (230) may be formed of an oxide-based insulating material. In this embodiment, it is formed of silicon dioxide (SiO2).

[0145] Figure 14 illustrates the visible light band reflection and absorption FDTD simulation results of the metaabsorber-based black matrix of the multilayer nanofilm described above with reference to Figure 13. It can be confirmed that it has high absorption across a broadband in the visible light band.

[0146] Next, with reference to FIGS. 15 to 17, a micropixel display device according to a modified example of FIG. 13 and a method for fabricating a metaabsorber-based black matrix of the micropixel display device will be described.

[0147] FIGS. 15 and FIGS. 16 respectively illustrate a plan view of a micropixel display device and a cross-sectional view of a metaabsorber-based black matrix according to a modified example of FIG. 13, and FIG. 17 illustrates a method for manufacturing the metaabsorber-based black matrix in FIGS. 15 and FIG. 16.

[0148] As illustrated in FIG. 15, the micropixel display device according to the present embodiment may be configured to include a metaabsorber-based black matrix comprising a light-reflecting metal layer (310) and a loss dielectric barrier (320).

[0149] The light-reflecting metal layer (310) is formed as a thin film on a substrate. The light-reflecting metal layer (310) may be formed from a metal material that reflects light. The light-reflecting metal layer (310) may be formed as a thin film by deposition. In this embodiment, it is formed from aluminum (Al). The light-reflecting metal layer (310) may also be formed from silver (Ag) or gold (Au). At this time, it is preferable that the light-reflecting metal layer (310) blocks visible light transmission with a thickness of 100 nm or more.

[0150] A loss dielectric barrier (320) is formed in the black matrix region with a loss dielectric material. The loss dielectric material may be germanium (Ge). The size of the loss dielectric barrier (320) may be formed to be several hundred nanometers, corresponding to the width of the black matrix region.

[0151] Furthermore, as illustrated in FIG. 16, the structure of FIG. 15 may further include a metal nanostructure layer (330).

[0152] The metal nanostructure layer (330) can be formed of a light-reflecting metal material on the loss dielectric barrier (320). The metal nanostructure layer (330) can be formed in a form in which metal nanostructures are spaced apart. For example, the metal nanostructure layer (330) can be formed in a form in which random nano-sized nanostructures are randomly spaced apart in an island shape on the loss dielectric barrier (320). The metal material forming the light-reflecting metal layer (310) can be any one of silver (Ag), aluminum (Al), or gold (Au).

[0153] In this embodiment, the loss dielectric barrier (320) absorbs light energy in a wavelength range of approximately 600 nm or more, and the metal nanostructure formed on the loss dielectric barrier (320) absorbs light energy in a wavelength range lower than that, so that light can be absorbed with high efficiency in a broadband range in the visible light band.

[0154] A method for fabricating a metaabsorber-based black matrix of a micropixel display device illustrated in FIG. 17 may be configured to include the steps of: depositing a light-reflecting metal layer (310) on a base substrate using a light-reflecting metal material; and forming a loss dielectric barrier (320) in a black matrix region separating subpixels on the light-transmitting metal layer (310) using a loss dielectric material. Additionally, the method may further include the step of forming a metal nanostructure layer (330) on the loss dielectric barrier (320) using a light-reflecting metal material in which nanostructures are spaced apart.

[0155] First, as illustrated in FIG. 17 (a), a light-reflecting metal layer (310) is formed by depositing a light-reflecting metal material on a substrate. The light-reflecting metal layer (310) can be formed over the entire pixel array area, including the black matrix area between subpixels. At this time, the metal material forming the light-reflecting metal layer (310) may be any one of silver (Ag), aluminum (Al), or gold (Au). Additionally, it is preferable to deposit the light-reflecting metal layer (310) with a thickness such that visible light transmission is completely blocked. In this embodiment, the light-reflecting metal layer (310) is aluminum (Al).

[0156] Next, as shown in FIG. 17 (b), a loss dielectric barrier (320) is formed with a loss dielectric material in a black matrix region on a light-transmitting metal layer (310). Although the drawing shows a Red subpixel region and a Blue subpixel region to help explain the region where the loss dielectric barrier (320) is formed, light-emitting structures such as an anode electrode, a cathode electrode, a HIL layer, an HTL layer, an EML layer, and an ETL layer in the corresponding region can be formed after the entire meta-absorber-based black matrix according to the present invention is fabricated.

[0157] The loss dielectric barrier (320) can be formed by a Deep UV exposure and development process. Alternatively, a substrate mask with a barrier pattern formed on a silicon wafer can be fabricated using Deep UV exposure, development, and etching processes, and then mass production can be achieved through a nanoimprint process and an etching process using the same.

[0158] A metaabsorber-based black matrix illustrated in Fig. 15 can be fabricated according to steps (a) and (b) of Fig. 17.

[0159] Furthermore, as illustrated in (c) of FIG. 17, if the step of forming a metal nanostructure layer (330) using a light-reflecting metal material on a loss dielectric barrier (320) is further included, a metaabsorber-based black matrix illustrated in FIG. 16 can be fabricated.

[0160] To explain the process of forming the metal nanostructure layer (330) in more detail, first, a Deep UV exposure and development process is performed using a mask that masks the subpixel area, thereby exposing only the barrier. Next, a metal thin film layer is formed using a metal material that forms the metal nanostructure layer (330) by an evaporative deposition method using an E-Beam deposition process. Next, the metal thin film layer can be self-assembled into clusters using a local heating technique with a Focused Ion Beam (FIB) or a laser to form the metal nanostructure layer (330) composed of metal islands randomly arranged in random sizes.

[0161] Although embodiments of the present invention have been described above with reference to the attached drawings, those skilled in the art will understand that the present invention may be implemented in other specific forms without changing its technical concept or essential features. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive.

Claims

A light-reflecting metal layer formed of a light-reflecting metallic material; A light-transmitting non-metallic insulating layer formed on the light-reflecting metal layer using a light-transmitting non-metallic insulating material; and A micropixel display device characterized by comprising a metaabsorber-based black matrix, wherein the black matrix region separating subpixels on the light-transmitting nonmetal insulating layer comprises a metal nanostructure layer in which nanostructures of different sizes having different resonant wavelengths in a broadband of visible light are spacedly arranged as a light-reflecting metal material. In Article 1, A micropixel display device characterized by the metal nanostructure layer having nanostructures of different sizes arranged periodically. In Article 2, A micropixel display device characterized by the above-mentioned metal nanostructure layer having nanostructures of different sizes arranged at equal intervals. In Paragraph 3, A micropixel display device characterized by the fact that the metal nanostructure layer has additional nanostructures of a certain size arranged at equal intervals in the space between nanostructures of different sizes arranged at equal intervals. In Article 1, A micropixel display device characterized in that the light-reflecting metal layer and the metal nanostructure layer are formed from any one of silver (Ag), aluminum (Al), and gold (Au). In Article 1, A micropixel display device characterized in that the light-transmitting non-metallic insulating layer is formed of silicon dioxide (SiO2). In Article 1, A micropixel display device characterized by the light-reflecting metal layer being formed with a thickness that blocks visible light transmission. In Article 1, A micropixel display device characterized by the above-mentioned nanostructure having a shape protruding in one of a circular, square, or cross shape. In Article 1, A micropixel display device characterized in that the above metaabsorber-based black matrix further comprises a planarization layer covering the metal nanostructure layer with a loss dielectric material. A step of depositing a light-reflecting metal layer on a base substrate using a light-reflecting metal material; A step of depositing a light-transmitting non-metallic insulating layer on the light-reflecting metal layer using a light-transmitting non-metallic insulating material; and A method for fabricating a metaabsorber-based black matrix of a micropixel display device, characterized by including the step of forming a metal nanostructure layer in which nanostructures of different sizes having different resonant wavelengths in a broadband of visible light are spacedly arranged in a black matrix region separating subpixels on the light-transmitting nonmetal insulating layer. In Article 10, The step of forming the metal nanostructure layer above A step of coating a lift-off layer on the light-transmitting non-metallic insulating layer; A step of forming a metal thin film layer on the surface of a nanoimprint mold in which the pattern of the metal nanostructure layer is formed as an intaglio, and transferring the metal thin film layer to the lift-off layer; A step of etching the lift-off layer using the transferred metal thin film layer as a mask; A step of depositing a metal material to form the metal nanostructure layer; and A method for fabricating a metaabsorber-based black matrix of a micropixel display device, characterized by including the step of lifting off the above-mentioned lift-off layer. In Article 11, A method for fabricating a metaabsorber-based black matrix of a micropixel display device, characterized in that the above-described nanoimprint mold is fabricated as an intaglio by replicating a relief pattern corresponding to the above-described nanostructure using an acrylate-based UV-curable mold resin. In Article 11, A method for fabricating a metaabsorber-based black matrix of a micropixel display device, characterized by further including the step of forming a flattened layer by covering the metal nanostructure layer with a loss dielectric material.

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