Substrate processing apparatus and method

Abstract

A substrate processing apparatus is disclosed. The substrate processing apparatus, according to one embodiment of the present disclosure, comprises: a laser for radiating laser light on the upper portion of a substrate; a fluid supply line for spraying fluid particles; a suction line for suctioning in particles separated from the substrate and discharging the particles to an exhaust port; and a controller for controlling the fluid supply line so that the fluid particles are sprayed on a multilayer film of the substrate so as to remove the particles generated on the substrate in a laser processing process.

Description

Substrate processing apparatus and method

[0001] The present invention relates to a substrate processing apparatus and a method of operation thereof, and more specifically, to an apparatus and a method of operation thereof for removing particles generated on a substrate during laser processing using fluid particle jetting.

[0002] During the laser processing of substrates, a large amount of particles are generated on the wafer surface and within the substrate. Since these particles can cause problems such as wafer surface contamination, circuit damage, and bonding defects in subsequent processes, it is important to effectively remove them. Conventionally, particles were removed using wet cleaning methods; however, there was a problem in that it was difficult to remove thermally fused particles—that is, particles fused to the substrate surface due to laser irradiation. In particular, wet cleaning was often difficult to apply to substrates with multilayer structures (including inorganic films and metal layers).

[0003] Therefore, there is a need for technology capable of effectively removing particles thermally attached to a substrate after laser processing.

[0004] The present invention is derived from research conducted as part of the Ministry of Science and ICT’s Core Technology Development for Advanced Semiconductor Packaging (Project No.: 2710006590, Project No.: 00423802, Project Management Agency: National Research Foundation of Korea, Research Project Title: Development of Core Technology for Ultra-thin Wafer Dicing Process Equipment Using Ultra Short Pulse Laser Grooving and Plasma Dry Etch, Project Performing Agency: PSK Holdings Co., Ltd., Research Period: 2024.04.01 ~ 2024.12.31).

[0005] Meanwhile, the Korean government, the provider of the problem, has no property interest in all aspects of the present invention.

[0006] The present invention aims to effectively remove particles that have been thermally fused to the surface of a substrate due to laser processing by spraying fluid particles.

[0007] In addition, the purpose is to optimize particle removal methods, such as fluid injection pressure, flow rate, and injection direction, depending on the type of laser processing process.

[0008] A substrate processing apparatus according to one embodiment of the present disclosure may include: a laser that irradiates laser light onto the upper surface of a substrate; a fluid supply line that sprays fluid particles; a suction line that sucks in particles separated from the substrate and discharges them through an exhaust port; and a controller that controls the fluid supply line so that fluid particles are sprayed onto a multilayer film of the substrate to remove particles generated on the substrate during a laser processing process.

[0009] In some embodiments, the fluid supply line can convert liquid carbon dioxide into solid carbon dioxide particles using compressed air and spray the solid carbon dioxide particles under the control of a controller.

[0010] In some embodiments, the controller can adjust at least one of the flow rate of liquid carbon dioxide, the pressure of compressed air, and the flow rate of compressed air depending on the type of laser processing process.

[0011] In some embodiments, the controller can detect particles occurring on the substrate and control the fluid supply line so that fluid particles are sprayed toward the particles.

[0012] In some embodiments, to prevent particles from adhering to the surface of the substrate, an air injection unit that injects air in a direction set by a controller may be further included.

[0013] In some embodiments, the substrate may include an inorganic film layer formed on top of a silicon wafer; and a metal layer formed on top of the inorganic film layer.

[0014] In some embodiments, for particle removal, a stage for moving the substrate in the direction in which fluid particles are ejected may be further included.

[0015] A substrate processing method according to one embodiment of the present disclosure may include: a step of irradiating a laser light onto the upper surface of a substrate; a step of spraying fluid particles onto the upper surface of a substrate to remove particles generated on the substrate during a laser processing process; and a step of sucking in particles separated from the substrate and discharging them through an exhaust port, wherein the step of spraying fluid particles onto the upper surface of a substrate may include a step of converting liquid carbon dioxide into solid carbon dioxide particles using compressed air; and a step of spraying solid carbon dioxide particles.

[0016] In some embodiments, the step of spraying fluid particles onto the upper surface of the substrate may further include the step of controlling at least one of the flow rate of liquid carbon dioxide, the pressure of compressed air, and the flow rate of compressed air according to the type of laser processing process.

[0017] In some embodiments, the method may further include the step of detecting particles occurring on a substrate; and the step of spraying fluid particles toward the detected particles.

[0018] In some embodiments, to prevent particles from adhering to the surface of the substrate, the step of blowing air in a direction set by the controller may be further included.

[0019] In some embodiments, the substrate may include an inorganic film layer formed on top of a silicon wafer; and a metal layer formed on top of the inorganic film layer.

[0020] In some embodiments, to remove particles, the step of moving the substrate in the direction in which fluid particles are ejected may be further included.

[0021] According to the disclosed embodiment, by spraying fluid particles, particles that have been heat-fused to the surface of a substrate due to laser processing can be effectively removed.

[0022] In addition, depending on the type of laser processing process, particle removal methods such as fluid injection pressure, flow rate, and injection direction can be optimized.

[0023] FIG. 1 is a drawing showing a substrate processing apparatus according to one embodiment of the present invention.

[0024] FIG. 2 is a flowchart illustrating the operation method of a substrate processing device according to one embodiment of the present invention.

[0025] FIG. 3 is a flowchart illustrating a method of spraying carbon dioxide particles onto the upper surface of a substrate according to one embodiment of the present invention.

[0026] FIG. 4 is a diagram showing the operation of a substrate processing device removing particles according to one embodiment of the present invention.

[0027] FIG. 5 is a diagram showing the operation of particle generation in a substrate processing device according to a comparative example of the present invention.

[0028] FIG. 6 is a diagram showing the structure of a substrate processing device according to one embodiment of the present invention.

[0029] FIG. 7 is a drawing showing a nozzle of a substrate processing device according to one embodiment of the present invention.

[0030] FIG. 8 is a diagram showing the particle removal rate according to one embodiment of the present invention.

[0031] Hereinafter, exemplary embodiments according to the present invention will be described in detail with reference to the contents described in the attached drawings. However, the present invention is not limited or restricted by exemplary embodiments. Unless otherwise defined, all terms used in this specification (including technical and scientific terms) shall be used in a meaning that is commonly understood by those skilled in the art to which this disclosure belongs, but this may vary depending on the intent of those skilled in the art, case law, the emergence of new technology, etc.

[0032] Furthermore, terms defined in commonly used dictionaries are not to be interpreted ideally or excessively unless explicitly and specifically defined otherwise. In certain cases, terms have been selected at the applicant's discretion, and in such cases, their meanings will be described in detail in the relevant explanatory sections. Accordingly, terms used in this disclosure should be defined not merely by their names, but based on their meanings and the content throughout this disclosure.

[0033] Throughout this specification, when a part is described as "comprising" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components. Furthermore, the singular form used in this specification includes the plural form unless specifically stated otherwise. Additionally, the expression "at least one of a, b, and / or c" as used throughout this specification may encompass 'a alone', 'b alone', 'c alone', 'a and b', 'a and c', 'b and c', or 'a, b, and c all'.

[0034] Meanwhile, terms such as "first and / or second" used in this specification may be used to describe various components, but they are used solely for the purpose of distinguishing one component from another and are not intended to limit the scope to the components referred to by such terms. For example, without departing from the scope of the present invention, the first component may be named the second component, and the second component may also be named the first component.

[0035] Additionally, terms such as “…part,” “…module,” etc., as described in this specification refer to a unit that processes at least one function or operation, which may be implemented in hardware or software, or a combination of hardware and software. Furthermore, embodiments of this disclosure may be represented in this specification by functional block configurations and various processing steps. These functional blocks may be implemented by various numbers of hardware and / or software configurations that execute specific functions. For example, embodiments of this disclosure may employ integrated circuit configurations such as memory, processing, logic, look-up tables, etc., which can execute various functions under the control of one or more microprocessors or other control devices.

[0036] Hereinafter, various embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In describing the embodiments, technical details that are well known in the art to which the present invention pertains and are not directly related to the present invention will be omitted. This is to ensure that the essence of the present invention is conveyed more clearly without obscuring it by omitting unnecessary explanations. For the same reason, some components in the accompanying drawings may be exaggerated, omitted, or schematically depicted. Furthermore, the size of each component does not entirely reflect its actual size. Throughout this specification, the same reference numerals may refer to the same or corresponding components.

[0037] FIG. 1 is a drawing showing a substrate processing device according to an embodiment of the present invention. Referring to FIG. 1, the substrate processing device (100) may include a laser (110), a fluid supply line (120), a suction line (130), and a controller (140). Additionally, a substrate (W) to be laser processed may be provided to the substrate processing device (100).

[0038] The substrate processing device (100) may be a device for effectively removing particles generated during a laser processing process. In the present disclosure, particles may refer to fine particles generated from a substrate (W) during laser processing.

[0039] The laser (110) can perform the function of cutting a multilayer film of the substrate or forming a specific pattern by irradiating laser light onto the upper surface of the substrate (W). The laser (110) may include a high-power laser module and an optical device (e.g., a microscope, a focusing lens, a beam adjusting device, etc.). The laser (110) can process the substrate by selectively using a laser of a specific wavelength.

[0040] During laser irradiation, particles may be generated on the surface and inside the substrate by heat, and a fluid supply line (120) and a suction line (130) may be operated to remove these particles.

[0041] The fluid supply line (120) can perform the function of spraying fluid particles onto the processing area of ​​the substrate (W) to remove particles generated during laser processing. Here, fluid particles may refer to particles in a fluid (gaseous or liquid) state, such as carbon dioxide, nitrogen, helium, or argon. However, in the present disclosure, fluid particles may be used in a sense that includes cases where particles in a solid or liquid state are converted into a solid state, as described below.

[0042] In some embodiments, the fluid supply line (120) may include a spray nozzle for spraying fluid particles, as shown in FIG. 6, and may be connected via a hose to a fluid tank (a carbon dioxide tank in FIG. 6), a CDA (Clean Dry Air) generator, etc.

[0043] In some embodiments, the fluid supply line (120) can convert liquid carbon dioxide into solid particles as shown in FIG. 7 and then spray solid carbon dioxide particles to remove particles attached to the substrate surface through physical impact and rapid cooling effects.

[0044] The fluid supply line (120) may spray solid carbon dioxide particles together with compressed air (CDA) or independently spray solid carbon dioxide particles. Here, CDA may refer to clean air from which moisture and contaminants have been removed, and may include inert gases such as N2, He, and Ar.

[0045] The fluid supply line (120) can spray fluid particles immediately after laser irradiation or during processing, and can effectively remove particles, and in the case of solid carbon dioxide particles, can lower the temperature of the substrate surface to improve the quality of laser processing.

[0046] The suction line (130) can prevent particles removed after fluid injection from spreading into the process environment and collect them to discharge through the exhaust port. To this end, the suction line (130) can be connected to the exhaust port through a hose. The suction line (130) can keep the substrate surface clean by sucking in particles along with the injected fluid particles.

[0047] The controller (140) can control the fluid supply line (120) and the suction line (130) to optimize particle removal performance. In some embodiments, the controller (140) can adjust the pressure, flow rate, and injection angle of the fluid injection depending on the type of laser processing process.

[0048] In some embodiments, the controller (140) may control the fluid supply line (120) in conjunction with a sensor that detects particles generated on the surface of the substrate so that when a large amount of particles are generated in a specific area, the fluid is sprayed intensively in that area.

[0049] The substrate (W) may be a substrate of various forms, such as a semiconductor wafer, a display panel, a MEMS substrate, or a ceramic substrate. In some embodiments, the substrate (W) may include an inorganic film (oxide film, nitride film, etc.) and a metal layer formed on top of a silicon wafer.

[0050] As described above, the substrate processing device (100) of the present invention can effectively remove particles that have been heat-fused to the surface of a substrate due to laser processing by spraying fluid particles.

[0051] In addition, the substrate processing device (100) of the present invention can optimize particle removal methods such as pressure, flow rate, and direction of injection of fluid injection according to the type of laser processing process.

[0052] FIG. 2 is a flowchart illustrating the operation method of a substrate processing device according to one embodiment of the present invention.

[0053] FIG. 2 can be described with reference to FIG. 1. Referring to FIG. 2, a method of operation (S100) of a substrate processing device according to one embodiment of the present invention may include the step of irradiating a laser light onto the upper surface of a substrate (S110), the step of spraying fluid particles onto the upper surface of a substrate to remove particles generated on the substrate during a laser processing process (S120), and the step of sucking in particles separated from the substrate and discharging them through an exhaust port (S130).

[0054] Figure 2 illustrates steps S110 to S130 being performed sequentially, but is not limited thereto; some steps may be merged and performed simultaneously, some steps may be omitted, or new steps may be added.

[0055] In step S110, a laser beam may be irradiated onto the upper surface of the substrate. For example, the laser (110) may irradiate a laser beam in a specific pattern or line to cut the multilayer film (including an inorganic film and a metal layer) of the substrate or form a specific shape. The output of the laser beam, the irradiation method (continuous / pulsed), the wavelength, etc., may be set according to the material of the substrate and the purpose of processing.

[0056] During the laser irradiation process, fine particles may be generated on the surface of the substrate and the cut edges, and if these particles are not treated separately, they may adhere to the substrate surface or diffuse into the surrounding environment.

[0057] In step S120, fluid particles may be sprayed onto the substrate to remove particles generated on the substrate during the laser processing process. For example, the fluid supply line (120) may spray fluid particles together with compressed air (CDA) to remove particles more effectively.

[0058] In the case of solid carbon dioxide particles, the particles can be separated by physical impact while simultaneously providing a rapid cooling effect to prevent thermal fusion caused by laser processing.

[0059] Fluid injection can be synchronized with laser processing, and depending on the embodiment, if a specific particle is detected, it may be injected intensively at that location.

[0060] In step S130, particles separated from the substrate can be sucked in and discharged through an exhaust port. For example, the suction line (130) can quickly collect particles that have fallen off the substrate after fluid injection and discharge them through an exhaust port. The suction line (130) can prevent particles from spreading into the surrounding environment and maintain the cleanliness of the substrate surface. In some embodiments, the suction speed can be automatically adjusted according to the flow rate of the injected fluid and the laser processing intensity.

[0061] FIG. 3 is a flowchart illustrating a method of spraying carbon dioxide particles onto the upper surface of a substrate according to an embodiment of the present invention. FIG. 3 can be described with reference to FIG. 1 and FIG. 2 described above. Referring to FIG. 3, a method (S200) of spraying carbon dioxide particles onto the upper surface of a substrate according to an embodiment of the present invention may include a step (S210) of controlling at least one of the flow rate of liquid carbon dioxide, the pressure of compressed air, and the flow rate of compressed air, a step (S220) of converting liquid carbon dioxide into solid carbon dioxide particles using compressed air, and a step (S230) of spraying solid carbon dioxide particles. For example, the method (S200) of FIG. 3 may correspond to step S120 of FIG. 2.

[0062] In step S210, at least one of the flow rate of liquid carbon dioxide, the pressure of compressed air, and the flow rate of compressed air can be adjusted according to the type of laser processing process. For example, the controller (140) can adjust the particle removal performance by increasing or decreasing the flow rate of carbon dioxide according to the characteristics of the laser processing process (processing depth, material type, etc.).

[0063] In some embodiments, the controller (140) can control the pressure and flow rate of the compressed air, thereby controlling the size and injection speed of the carbon dioxide particles.

[0064] In some embodiments, the controller (140) can analyze the laser processing conditions and automatically set the optimal control value.

[0065] In step S220, liquid carbon dioxide can be converted into solid carbon dioxide particles using compressed air (CDA). As shown in FIG. 7, when liquid carbon dioxide comes into contact with compressed air (CDA), it undergoes a rapid temperature drop during the high-speed expansion process and can be converted into fine solid particles.

[0066] The size of the converted solid carbon dioxide particles can be adjusted to correspond to a particle size (several micrometers to tens of micrometers), and the size of the solid carbon dioxide particles can be optimized through the control of injection pressure and flow rate.

[0067] In step S230, solid carbon dioxide particles may be sprayed. The carbon dioxide particles may provide a physical impact effect that removes particles by colliding with particles attached to the substrate surface. Additionally, by lowering the temperature of the substrate surface through a rapid cooling effect, they may serve to separate thermally fused particles. In some embodiments, the solid carbon dioxide particles may be sprayed together with compressed air (CDA), thereby separating the particles more efficiently.

[0068] In addition, carbon dioxide particle spraying can be synchronized with the laser processing process, and if specific particles are detected, they can be sprayed intensively at that location.

[0069] FIG. 4 is a diagram showing the operation of a substrate processing device removing particles according to an embodiment of the present invention. FIG. 4 can be described with reference to FIG. 1 to FIG. 3 described above. The laser (210), fluid supply line (220), and suction line (230) shown in FIG. 4 may correspond to the laser (110), fluid supply line (120), and suction line (130) of FIG. 1, respectively.

[0070] Referring to FIG. 4, the substrate (W) may be a multilayer film structure including a silicon layer (SI), an inorganic film layer (IO), and a metal layer (M).

[0071] The silicon layer (SI) is the basic layer of the semiconductor device, and an inorganic film layer (IO), a metal layer (M), etc. can be formed on top of the silicon layer (SI).

[0072] The inorganic film layer (IO) can be composed of insulating films such as oxide films (SiO2) or nitride films (Si3N), and can perform circuit protection and insulation functions.

[0073] The metal layer (M) can be formed of a conductive material such as copper (Cu) or aluminum (Al) and can serve as an electrode and wiring.

[0074] The laser (210) can irradiate laser light (L) onto the upper surface of the substrate (W) for a laser processing process. When laser light (L) is irradiated onto the substrate (W), particles (P) may be formed on the metal layer (M) and the inorganic film layer (IO). In particular, the particles (P) generated on the laser processing side (S) may be heat-fused and difficult to remove by conventional wet cleaning methods.

[0075] Therefore, to remove particles (P) generated on the laser processing surface, the fluid supply line (220) can spray fluid particles in the direction of the laser processing surface.

[0076] The suction line (230) can suck in particles (P) separated from the substrate (W) by fluid particles and fluid particles and discharge them through the exhaust port. The suction line (230) can perform the function of collecting particles that have fallen off the substrate surface so that they do not spread into the process environment.

[0077] In some embodiments, the fluid particles may be particles that have undergone a phase transition from liquid carbon dioxide particles to solid carbon dioxide particles. In this case, the sprayed solid carbon dioxide particles can provide a physical impact to the particles to separate the thermally fused particles from the substrate surface. Additionally, through a rapid cooling effect, the high temperature of the substrate surface generated during laser processing can be cooled, and the reattachment of particles can be prevented. In some embodiments, the solid carbon dioxide particles are sprayed together with compressed air (CDA) to further improve particle removal performance.

[0078] Furthermore, solid carbon dioxide particles that sublimate at -78.5°C can shrink through the heat of sublimation (thermal shock). When particles are rapidly cooled, they shrink due to differences in thermal expansion, which can generate internal stress and lead to the formation of cracks. Through this process, the particles can be transformed into a state that is easy to remove.

[0079] Solid carbon dioxide particles that penetrate into the gaps of particles can vaporize and expand to about 800 times their size, thereby detaching the particles. This expansion can detach the particles from the inside, making them easy to remove from the surface.

[0080] FIG. 5 is a diagram showing the operation of particle generation in a substrate processing apparatus according to a comparative example of the present invention. FIG. 5 can be described in contrast to the substrate processing apparatus of the present invention described in FIG. 4.

[0081] Referring to FIG. 5, the laser (310) can irradiate laser light (L) onto the upper surface of the substrate (W) for a laser processing process. When laser light (L) is irradiated onto the substrate (W), particles (P) may be formed on the metal layer (M) and the inorganic film layer (IO).

[0082] Unlike in the case of Fig. 4, if particles (P) are not removed during the laser processing process as in Fig. 5, the particles (P) may be thermally fused to the laser processing side (S), causing the patterned circuit to short or resulting in bonding defects in subsequent processes. If such contamination accumulates, the yield of semiconductor and display manufacturing may decrease.

[0083] FIG. 6 is a diagram showing the structure of a substrate processing apparatus according to an embodiment of the present invention. FIG. 6 can be explained with reference to FIG. 1 to FIG. 5 described above.

[0084] Referring to FIG. 6, a substrate processing device according to one embodiment of the present invention may include a laser (410), a fluid supply line (420), a suction line (430), a controller (440), a microscope (450), a first moving member (460), a second moving member (470), an exhaust port (480), a CDA generator (490), a stage (ST), a first hose (H1), a second hose (H2), and a third hose (H3).

[0085] The laser (410) may be configured to process by irradiating laser light onto a specific area of ​​the substrate (W), and particles may be generated when the laser is irradiated.

[0086] The fluid supply line (420) may be configured to spray fluid particles to remove particles from the surface of the substrate during or after laser processing. FIG. 6 illustrates, for example, the case of spraying carbon dioxide particles.

[0087] The suction line (430) may be configured to suck in particles and fluid particles separated from the substrate (W) after fluid injection and discharge them to the exhaust port (480). The suction line (430) may suck in particles and fluid particles sucked from the substrate (W) and discharge them to the exhaust port (480) through the third hose (H3).

[0088] The controller (440) can control the operation of the fluid supply line (420) and the suction line (430) to optimize particle removal performance.

[0089] The microscope (450) may be configured to observe the laser processing state and whether particles are formed.

[0090] The first moving member (460) may be configured to move in the direction of a first axis and a second axis perpendicular to the first axis for laser irradiation.

[0091] The second moving member (470) may be configured to move in a third axis direction perpendicular to the first axis and the second axis for laser irradiation.

[0092] The exhaust port (480) may be configured to discharge particles and fluid particles removed through the suction line (430) to the outside.

[0093] The CDA generator (490) can generate compressed air for use in the fluid injection process. Additionally, the CDA generator (490) can receive liquid carbon dioxide from a carbon dioxide tank.

[0094] The stage (ST) may be configured to fix the substrate (W) and perform precise position control during processing.

[0095] The first hose (H1) and the second hose (H1) may each include a CO2 hose and a CDA hose. Liquid carbon dioxide provided from the carbon dioxide tank may be supplied to the fluid supply line (420) via the CDA generator, the CO2 hose in the first hose, the controller (440), and the CO2 hose in the second hose (H2).

[0096] Additionally, the CDA generated from the CDA generator can be supplied to the fluid supply line (420) via the CDA hose in the first hose, the controller (440), and the CDA hose in the second hose (H2).

[0097] FIG. 7 is a drawing showing a nozzle of a substrate processing apparatus according to an embodiment of the present invention. FIG. 7 can be described with reference to FIG. 1 to 6 described above.

[0098] Referring to FIG. 7, the nozzle (520) of the substrate processing device may correspond, for example, to the fluid supply line (420) of FIG. 6.

[0099] The nozzle (520) is carbon dioxide as shown in FIG. 7 It may include a hose and a CDA hose. Liquid carbon dioxide may be supplied through the carbon dioxide hose, and compressed air (CDA) may be supplied through the CDA hose.

[0100] When liquefied carbon dioxide comes into contact with compressed air (CDA), it undergoes a rapid temperature drop during the high-speed expansion process and can be converted into fine solid particles. The carbon dioxide converted into solid particles can be used for particle removal.

[0101] FIG. 8 is a diagram showing the particle removal rate according to an embodiment of the present invention. In FIG. 8, the removal rate (%) for particle size is shown for each of the cleaning methods using solid carbon dioxide, cleaning through air jetting, and cleaning using vacuum adsorption.

[0102] As shown in Fig. 8, when the particle size is 20 µm or larger, the cleaning method using solid carbon dioxide shows a removal rate of about 100%, whereas cleaning by air jet shows a removal rate of about 50%, and vacuum cleaning shows a removal rate of about 0%.

[0103] The above descriptions are specific embodiments for carrying out the present disclosure. The present disclosure will include not only the embodiments described above, but also embodiments that are simply modified or can be easily modified. Furthermore, the present disclosure will include technologies that can be easily modified and implemented using the embodiments described above. Accordingly, the scope of the present disclosure should not be limited to the embodiments described above, but should be defined by the claims set forth below as well as equivalents to the claims of the present disclosure.

Claims

1. A laser that irradiates laser light onto the upper surface of a substrate; Fluid supply line for spraying fluid particles; A suction line that sucks in particles separated from the above substrate and discharges them to an exhaust port; and A controller comprising a fluid supply line that controls the fluid particles to be sprayed onto a multilayer film of the substrate in order to remove the particles generated on the substrate, Substrate processing device.

2. In Claim 1, The above fluid supply line is, Converting liquid carbon dioxide into solid carbon dioxide particles using compressed air, and spraying solid carbon dioxide particles according to the control of the controller, Substrate processing device.

3. In Claim 2, The above controller is, Adjusting at least one of the flow rate of liquid carbon dioxide, the pressure of compressed air, and the flow rate of compressed air according to the type of the laser processing process above, Substrate processing device.

4. In Claim 1, The above controller is, Detecting the particles occurring on the substrate and controlling the fluid supply line so that the fluid particles are sprayed toward the particles, Substrate processing device.

5. In Claim 1, To prevent the above particles from adhering to the surface of the substrate, the air injection unit further includes an air injection unit that injects air in a direction set by the controller. Substrate processing device.

6. In Claim 1, The above substrate is, An inorganic film layer formed on top of a silicon wafer; and A metal layer formed on top of the above-mentioned inorganic film layer, comprising Substrate processing device.

7. In Claim 1, To remove the above particles, the method further includes a stage for moving the substrate in the direction in which the fluid particles are sprayed. Substrate processing device.

8. Step of irradiating the upper surface of the substrate with laser light; A step of spraying fluid particles onto the upper surface of the substrate to remove particles generated on the substrate; and It includes the step of sucking in particles separated from the substrate and discharging them through an exhaust port, The step of spraying the fluid particles onto the upper surface of the substrate is, A step of converting liquid carbon dioxide into solid carbon dioxide particles using compressed air; and A step comprising spraying the above-mentioned solid carbon dioxide particles, Method of operation of a substrate processing device.

9. In Claim 8, The step of spraying the fluid particles onto the upper surface of the substrate is, A method further comprising the step of controlling at least one of the flow rate of liquid carbon dioxide, the pressure of compressed air, and the flow rate of compressed air according to the type of the laser processing process described above. Method of operation of a substrate processing device.

10. In Claim 8, A step of detecting the particles occurring on the substrate; and A method further comprising the step of spraying the fluid particles toward the detected particles. Method of operation of a substrate processing device.

11. In Claim 8, To prevent the above particles from adhering to the surface of the substrate, the method further includes the step of blowing air in a direction set by a controller. Method of operation of a substrate processing device.

12. In claim 8, The above substrate is, An inorganic film layer formed on top of a silicon wafer; and A metal layer formed on top of the above-mentioned inorganic film layer, comprising Method of operation of a substrate processing device.

13. In claim 8, To remove the above particles, the method further includes the step of moving the substrate in the direction in which the fluid particles are sprayed. Method of operation of a substrate processing device.

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