Capacitively coupled plasma system and ETCH process with enhanced substrate performance

Abstract

A substrate processing system includes a substrate support arranged in a processing chamber and a first electrode. A gas distribution device supplies a gas mixture. A second electrode is arranged above the substrate support. An RF bias generator selectively supplies an RF bias to the first electrode. An RF plasma generator selectively supplies RF plasma power to the second electrode. A controller evacuates the processing chamber to a predetermined pressure. During each etching cycle, the controller supplies RF plasma power to the second electrode to at least one of strike and maintain plasma in the processing chamber, supplies an RF bias to the first electrode during one of a first period and a second period of the etching cycle, and does not supply the RF bias to the first electrode during the other of the first period and the second period of the etching cycle.

Description

Attorney Docket No. 12100-1 WOHDP Ref. No. 15545-001318-WO-POACAPACITIVELY COUPLED PLASMA SYSTEM AND ETCH PROCESS WITH ENHANCED SUBSTRATE PERFORMANCECROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of U.S. Provisional Application No.63 / 771,330, filed on March 13, 2025. The entire disclosure of the above application is incorporated herein by reference.FIELD

[0002] The present disclosure relates to substrate processing systems, and more particularly to a capacitively coupled plasma processing systems with decoupled RF plasma and RF bias sources.BACKGROUND

[0003] The background description provided here is for the purpose of generally presenting the context of the disclosure. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.

[0004] Substrate processing systems may be used to treat substrates such as semiconductor wafers. The substrate treatments may include deposition, etching, cleaning, and / or other treatments. During processing, a substrate is arranged on a substrate support in a processing chamber of the substrate processing system. Gas mixtures are introduced into the processing chamber using a gas delivery device such as a showerhead. In some processes, radio frequency (RF) plasma may be used to initiate chemical reactions.SUMMARY

[0005] A substrate processing system includes a substrate support arranged in a processing chamber, configured to support a substrate, and including a first electrode. A gas distribution device supplies a gas mixture. A second electrode is arranged above the substrate support. An RF bias generator is configured to selectively supply an RF bias to the first electrode. An RF plasma generator is configured to selectively supply RF plasmaAttorney Docket No. 12100-1 WOHDP Ref. No. 15545-001318-WO-POApower to the second electrode. A controller is configured to evacuate the processing chamber to a predetermined pressure. During each etching cycle, the controller is configured to supply RF plasma power to the second electrode to at least one of strike and maintain plasma in the processing chamber, supply an RF bias to the first electrode during one of a first period and a second period of the etching cycle, and not supply the RF bias to the first electrode during the other of the first period and the second period of the etching cycle.

[0006] In other features, the predetermined pressure is in a range from 2 m illiTorr (mT) to 2000 mT. The predetermined pressure is in a range from 10 mT to 100mT. The gas distribution device includes the second electrode.

[0007] In other features, the substrate support comprises an electrostatic chuck and the second electrode comprises a baseplate of the electrostatic chuck. A frequency of the RF plasma power supplied by the RF plasma generator is in a range from 40 MHz to 100MHz. The RF plasma power supplied by the RF plasma generator is in a range from 10W to 2500W. The RF plasma power supplied by the RF plasma generator is in a range from 50W to 500W.

[0008] In other features, a frequency of the RF bias supplied by the RF bias generator is in a range from 400 kHz to 14MHz. Power of the RF bias supplied by the RF bias generator is in a range from 10W to 2500W. Power of the RF bias supplied by the RF bias generator is in a range from 10W to 200W. The RF plasma generator generates ions having an ion energy in a range from 20eV to 60eV. The RF bias generator generates ions having an ion energy in a range from 60eV to 2000eV.

[0009] In other features, the controller performs RF pulsing by turning the RF bias on during the first period of the etching cycle and turning the RF bias off during the second period of the etching cycle. The controller performs atomic layer etch (ALE) by turning the RF bias off during the first period of the etching cycle and turning the RF bias on during the second period of the etching cycle.

[0010] In other features, the gas distribution device supplies a gas mixture to the processing chamber including a first gas selected from a group consisting of hydrogen fluoride (HF), CxFy, CHxFy, COx, and combinations thereof, where x and y are integers and a second gas selected from a group consisting of argon (Ar), helium (He), neon (Ne), molecular oxygen (O2), molecular nitrogen (N2), and combinations thereof.Attorney Docket No. 12100-1 WOHDP Ref. No. 15545-001318-WO-POA

[0011] In other features, the first period and the second period have a duration in a range from 1 second to 20 seconds.

[0012] A method for processing a substrate includes arranging a substrate on a substrate support in a processing chamber, wherein the substrate support includes a first electrode; evacuating the processing chamber to a predetermined pressure; supplying a gas mixture to the processing chamber; and during each etching cycle: supplying RF plasma power to a second electrode arranged above the substrate support to at least one of strike and maintain plasma in the processing chamber; supplying an RF bias to the first electrode during one of a first period and a second period of the etching cycle; and not supplying the RF bias to the first electrode during the other of the first period and the second period of the etching cycle.

[0013] In other features, the predetermined pressure is in a range from 2 m illiTorr (mT) to 2000 mT. The predetermined pressure is in a range from 10 mT to 10OmT. The second electrode is arranged in a gas distribution device. The substrate support comprises an electrostatic chuck and the second electrode comprises a baseplate of the electrostatic chuck. A frequency of the RF plasma power is in a range from 40 MHz to 100MHz. The RF plasma power is in a range from 10W to 2500W.

[0014] In other features, the RF plasma power is in a range from 50W to 500W. A frequency of the RF bias is in a range from 400 kHz to 14MHz. Power of the RF bias is in a range from 10W to 2500W. Power of the RF bias is in a range from 10W to 200W. The RF plasma power generates ions having an ion energy in a range from 20eV to 60eV. The RF bias generates ions having an ion energy in a range from 60eV to 2000eV.

[0015] In other features, the method includes performing RF pulsing by turning the RF bias on during the first period of the etching cycle and turning the RF bias off during the second period of the etching cycle. The method includes performing atomic layer etch (ALE) by turning the RF bias off during the first period of the etching cycle and turning the RF bias on during the second period of the etching cycle.

[0016] In other features, the gas mixture includes a first gas selected from a group consisting of a group consisting of hydrogen fluoride (HF), CxFy, CHxFy, COx, and combinations thereof, where x and y are integers and a second gas selected from a group consisting of argon (Ar), helium (He), neon (Ne), molecular oxygen (O2), molecular nitrogen (N2), and combinations thereof.Attorney Docket No. 12100-1 WOHDP Ref. No. 15545-001318-WO-POA

[0017] In other features, the first period and the second period have a duration in a range from 1 second to 20 seconds.

[0018] A substrate processing system includes a substrate support arranged in a processing chamber, configured to support a substrate, and including a first electrode. A gas distribution device is configured to supply a gas mixture. A second electrode is arranged in a plasma processing chamber above the substrate support. An RF plasma generator is configured to selectively supply RF plasma power to the second electrode. An RF bias generator is configured to selectively supply an RF bias to the first electrode. A controller is configured to evacuate the processing chamber to a predetermined pressure; and during each etching cycle: supply the RF plasma power at a frequency in a range from 40 MHz to 100MHz to the second electrode to strike and maintain plasma; supply the RF bias at a frequency in a range from 400kHz to 14 MHz to the first electrode during one of a first period and a second period of the etching cycle; and not supply the RF bias to the first electrode during the other of the first period and the second period of the etching cycle.

[0019] A substrate processing system includes a substrate support arranged in a processing chamber, configured to support a substrate, and including a first electrode. A gas distribution device is configured to supply a gas mixture. A second electrode is arranged above the substrate support. An RF bias generator is configured to selectively supply an RF bias to the first electrode. An RF plasma generator is configured to selectively supply RF plasma power to the second electrode. A controller is configured to evacuate the processing chamber to a predetermined pressure; and during each etching cycle: supply the RF plasma power to the second electrode to strike and maintain plasma in the processing chamber, wherein the RF plasma power generates ions having an ion energy in a range from 20eV to 60 eV; and supply the RF bias to the first electrode during one of a first period and a second period of the etching cycle, wherein the RF bias generates ions having an ion energy in a range from 60 eV to 2000eV; and not supply the RF bias to the first electrode during the other of the first period and the second period of the etching cycle.

[0020] Further areas of applicability of the present disclosure will become apparent from the detailed description, the claims, and the drawings. The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure.Attorney Docket No. 12100-1 WOHDP Ref. No. 15545-001318-WO-POABRIEF DESCRIPTION OF THE DRAWINGS

[0021] The present disclosure will become more fully understood from the detailed description and the accompanying drawings, wherein:

[0022] FIG. 1 is functional block diagram of an example of a substrate processing system with RF plasma power supplied to an upper electrode and an RF bias supplied to the lower electrode according to the present disclosure;

[0023] FIG. 2A illustrates an example of etching using both RF plasma power and RF bias power supplied to the lower electrode with the upper electrode grounded;

[0024] FIG. 2B illustrates an example of atomic layer etching of a substrate with decoupled RF plasma power supplied to the upper electrode and RF bias power supplied to the lower electrode according to the present disclosure;

[0025] FIG. 2C illustrates another example of rapid pulsing to etch a substrate with decoupled RF plasma power supplied to the upper electrode and RF bias power supplied to the lower electrode according to the present disclosure;

[0026] FIG. 3 illustrate an example RF pulsing where the decoupled RF plasma power is supplied to the upper electrode and the RF bias power is selectively supplied to the lower electrode according to the present disclosure;

[0027] FIG. 4 illustrate an example of atomic layer etching where the decoupled RF plasma power is supplied to the upper electrode and the RF bias power is selectively supplied to the lower electrode according to the present disclosure;

[0028] FIG. 5 illustrates an example a method for RF pulsing according to the present disclosure;

[0029] FIG. 6 illustrates an example of a method for atomic layer etch (ALE) according to the present disclosure;

[0030] FIG. 7 is a graph illustrating an example of hard mask loss as a function of profile angle during etching with the decoupled RF plasma source according to the present disclosure; and

[0031] FIG. 8 is a graph illustrating an example of ion density as a function of ion energy during etching with the decoupled RF plasma source according to the present disclosure.

[0032] In the drawings, reference numbers may be reused to identify similar and / or identical elements.Attorney Docket No. 12100-1 WOHDP Ref. No. 15545-001318-WO-POADETAILED DESCRIPTION

[0033] The present disclosure relates to a plasma processing system that decouples ion flux and ion energy to enable high plasma density and maintain low ion energy on the substrate. In a capacitively coupled plasma (CCP) substrate processing system, radio frequency (RF) plasma power is supplied to an upper electrode and RF bias power is suppled to a lower electrode (e.g., a baseplate of an electrostatic chuck). The RF plasma processes described further below provide improved etch performance (selectivity and corner loss) while remaining above minimum power settings of the RF plasma generator and not exceeding low ion energy values that prevent or limit damage to logic structures of the substrate. Decoupled control of ion energy and ion flux / dissociation enables increased polymer deposition while maintaining low ion energy.

[0034] Referring now to FIG. 1, a substrate processing system 100 includes a processing chamber 102 including a gas distribution device 104 and a substrate support 106. In some examples, the gas distribution device 104 includes a showerhead. In some examples, the substrate support 106 includes an electrostatic chuck (ESC). During operation, a substrate 108 is arranged on the substrate support 106.

[0035] If an ESC is used, the substrate support 106 includes a baseplate 110 that acts as a lower electrode. In some examples, the baseplate 110 is made of a conducting material such as aluminum. The baseplate 110 supports a top plate 112, which may be made of ceramic or another material resistant to plasma. A bond layer 114 bonds the top plate 112 and the baseplate 110. The baseplate 110 may include one or more coolant channels 116 for flowing coolant through the baseplate 110. In some examples, an edge ring 118 is arranged around the substrate support 106 to shape the plasma. In some examples, a height of the edge ring can be increased in response to erosion to maintain a uniform plasma sheath from one substrate to the next.

[0036] A gas delivery system 130 includes one or more gas sources 132. The gas sources 132 supply one or more process gas mixtures. For an etching process, the process gas mixture may include carrier gas, inert gases, etching gas, etc. For a deposition process, the process gas mixture may include carrier gas, inert gases, deposition precursor gases, etc. The gas sources 132 are connected by flow metering devices 134 (e.g., mass flow controllers and valves) to a manifold 140. An output of the manifold 140 is fed to the gas distribution device 104. In some examples, a vapor delivery system 170 includes one or more vapor delivery sources that supply vapor to the manifoldAttorney Docket No. 12100-1 WOHDP Ref. No. 15545-001318-WO-POA140 or connect to the gas distribution device 104 downstream from the manifold 140. In some examples, the vapor delivery system 170 includes one or more ampoules 174, vaporizers 176, and flow metering devices 178 to controllably supply the vapor to the processing chamber.

[0037] In some examples, a temperature controller 142 is connected to heating elements 144 (e.g., thermal control elements (TCEs) or resistive heaters) arranged in the top plate 112. The temperature controller 142 may be used to supply power to the heating elements 144 to control a temperature of the substrate support 106 and the substrate 108 during processing. The temperature controller 142 also operates a coolant assembly 146 that controls coolant flow through the coolant channels 116. For example, the coolant assembly 146 may include a coolant pump and coolant reservoir (not shown). The temperature controller 142 operates the coolant assembly 146 to selectively flow the coolant through the coolant channels 116 to cool the substrate support 106 and the substrate 108. A valve 150 and a pump 152 are connected to a gas line 148 (e.g., an exhaust gas line) and are used to control pressure within the processing chamber 102 to a predetermined pressure and / or to evacuate reactants from the processing chamber 102.

[0038] A plasma generator 154 supplies power to an upper electrode associated with the gas distribution device 104. The plasma generator 154 includes a radio frequency (RF) plasma source 156 to output RF voltage / power to a matching network 158. The matching network 158 matches the impedance of the RF plasma source 156 to the impedance of the load including the processing chamber and plasma. Plasma generator 154 may include multiple RF generators and match networks.

[0039] A controller 160 may be used to monitor system parameters and to control components of the substrate processing system 100 based on a recipe. One or more robots 161 may be used to deliver substrates onto, and remove substrates from, the substrate support 106.

[0040] A RF bias generator 164 supplies power to the baseplate or other electrode associated with the substrate support. The RF bias generator 164 includes a radio frequency (RF) bias source 166 to output RF voltage / power to a matching network 168. The matching network 168 matches the impedance of the RF bias source 166 to the impedance of the load. The RF bias generator 164 may include multiple RF generators and match networks.Attorney Docket No. 12100-1 WOHDP Ref. No. 15545-001318-WO-POA

[0041] The gas distribution device 104 includes a gas plenum 182 that distributes gas from the gas delivery system 130 and / or vapor from the vapor delivery system 170 to gas through holes 184 passing through a plate or electrode 186 that is biased by the plasma generator 154. Thermal chokes 190 may be arranged between a cooling plate 192 and a surface of the gas distribution device 104. The thermal chokes 190 control the location and amount of heat transfer between the cooling plate 192 and the gas distribution device 104 (e.g., a showerhead). In other examples, the upper electrode is separate from the gas distribution device.

[0042] Referring now to FIG. 2A, a substrate includes a mask layer 210 (e.g., a hard mask material such as titanium nitride (TiN) or tungsten containing hard mask), a silicon oxide (SiO2) layer 214, a metal layer 226 (including an upper edge 227 exposed in a trench 228), a silicon nitride layer 218, and a silicon oxide layer 222. The goal of the etch process is to etch the silicon oxide layer 214 in the trench 228 (to 246) while minimizing etching of the upper edge 227 of the metal layer 226, side walls of the trench 228, and the mask layer 210. However, using a substrate processing system with the RF plasma power and RF bias supplied to the lower electrode results in undesirable etching of the mask layer 210 at 240 and undesirable etching of the upper edge 227 of the metal layer at 244.

[0043] Referring now to FIG. 2B, one or more ALE cycles may be used to etch the substrate. During a first period of a cycle, a monolayer is deposited. During a second period of the cycle, the monolayer is activated. Using ALE as described herein allows etching of the silicon oxide (SiC ) layer 214 in the trench (at 246) while minimizing or avoiding etching of the mask layer 210 (at 250) and undesirable etching of the upper edge 227 of the metal layer (at 254). The extremely low ion energy of the process disclosed herein controls etch selectivity against mask and in-hole features such as inhole corner loss.

[0044] Referring now to FIG. 2C, RF pulsing may be used to etch the substrate. During a first period of RF pulsing, one or more layers are deposited and etching is performed during the second period. Using RF pulsing as described herein, a polymer layer is deposited with increased thickness on the mask layer 210 and the upper edge 227 of the metal layer 226. The increased thickness of the polymer layer allows etching of the silicon oxide (SiO2) layer 214 in the trench (at 246) while minimizing or avoiding etching of the mask layer 210 (at 250) and undesirable etching of the upper edge 227 of the metal layerAttorney Docket No. 12100-1 WOHDP Ref. No. 15545-001318-WO-POA(at 254). The low ion energy of the process disclosed herein controls etch selectivity relative to mask and in-hole features such as in-hole corner loss.

[0045] Referring now to FIG. 3, an example illustrating RF plasma power supplied to the electrode of the gas distribution device 104 and RF bias power supplied to the electrode in the substrate support during RF pulsing is shown. During a first period or Statel of a cycle, the RF plasma power is supplied to the electrode of the gas distribution device 104 and RF bias power is supplied to the electrode in the substrate support. During a second period or StateO of the cycle, the RF plasma power is supplied to the electrode of the gas distribution device 104 and RF bias power is not supplied to the electrode in the substrate support. The process includes one or more cycles.

[0046] Referring now to FIG. 4, an example illustrating RF plasma power supplied to the electrode of the gas distribution device 104 and RF bias power supplied to the electrode in the substrate support during atomic layer etching is shown. During a first period or a deposition step, the RF plasma power is supplied to the electrode of the gas distribution device 104 and RF bias power is not supplied to the electrode in the substrate support. During a second period or an activation step, the RF plasma power is supplied to the electrode of the gas distribution device 104 and RF bias power is supplied to the electrode in the substrate support. The process includes one or more cycles.

[0047] In some examples, the processing chamber is evacuated to a predetermined vacuum pressure in a range from 5mT to 2000mT during etching. In some examples, the processing chamber is evacuated to a predetermined vacuum pressure in a range from 10mT to 100mT during etching.

[0048] In some examples, the RF plasma source 156 supplying the RF plasma power to the upper electrode operates at a higher frequency than the RF bias source 166 supplying the RF bias. In some examples, the RF plasma source 156 supplying the RF plasma power to the upper electrode operates in a frequency range from 40 MHz to 100 MHz. In some examples, the RF bias source 166 supplying the RF bias to the lower electrode operates in a frequency range from 400 kHz to 14 MHz. In some examples, the RF plasma source 156 supplying the RF plasma power to the upper electrode operates at 60MHz and the RF bias source 166 supplying the RF bias to the lower electrode operates at 2MHz.

[0049] In some examples, the RF plasma source 156 supplying the RF plasma power to the upper electrode supplies power in a range from 10W to 2500W (corresponding toAttorney Docket No. 12100-1 WOHDP Ref. No. 15545-001318-WO-POAion energy in a range from 20eV to 60eV). In other examples, the RF plasma source 156 supplying the RF plasma power to the upper electrode supplies power in a range from 10Wto 1000W. In other examples, the RF plasma source 156 supplying the RF plasma power to the upper electrode supplies power in a range from 50W to 500W.

[0050] In some examples, the RF bias source 166 supplying the RF bias to the lower electrode supplies power in a range from 10W to 2500W (corresponding to ion energy in a range from 60eV to 2000eV). In some examples, the RF bias source 166 supplying the RF bias to the lower electrode supplies power in a range from 10W to 1000W. In some examples, the RF bias source 166 supplying the RF bias to the lower electrode supplies power in a range from 10W to 200W.

[0051] In some examples, the process gas mixture is selected from a group consisting of hydrogen fluoride (HF), CxFy(e.g., hexafluoro-1,3-butadiene C4F6, octafluorocyclobutane (C4F8)), CHxFy (e.g., fluoromethane (CH3F), difluoromethane (CH2F2), trifluormethane (CHF3), COx (carbon monoxide (CO), carbon dioxide (CO2), argon (Ar), helium (He), neon (Ne), molecular oxygen (O2), and molecular nitrogen (N2).

[0052] In some examples, the process gas mixture includes a gas mixture including a first gas selected from a group consisting of hydrogen fluoride (HF), CxFy (e.g., hexafluoro-1 ,3-butadiene C4F6, octafluorocyclobutane (C4F8)), CHxFy(e.g., fluoromethane (CH3F), difluoromethane (CH2F2), trifluormethane (CHF3), COx (carbon monoxide (CO), carbon dioxide (CO2) and a second gas selected from a group consisting of argon (Ar), helium (He), neon (Ne), molecular oxygen (O2), and molecular nitrogen (N2).

[0053] In some examples, silicon dioxide (SiO2) is selectively etched relative to a metalbased material (such as tungsten-doped silicon carbide (WDC), tungsten (W), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), hafnium oxide (HfOx), hafnium (Hf), zirconium oxide (ZrOx)), and / or silicon nitride (SiN). In other examples, silicon nitride (SiN) is etched relative to a metal-related material (such as tungsten-doped silicon Carbide (WDC), tungsten (W), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), hafnium oxide (HfOx), hafnium (Hf), zirconium oxide (ZrOx)) and / or silicon dioxide (SiO2).

[0054] Referring now to FIG. 5, a method for performing etching using RF pulsing is shown. At 310, the substrate is loaded into the processing chamber and the processing chamber is evacuated to a vacuum pressure in a range from 5 mT to 2000mT. At 314, NAttorney Docket No. 12100-1 WOHDP Ref. No. 15545-001318-WO-POAis set to 1. At 318, the process gas mixture is supplied. At 322, the RF plasma power (frequency 40MHz to 100 MHz; power 10 to 2500W) and the RF bias (frequency 400kHz to 14 MHz; power 10 to 2500W) are supplied for first period (e.g., in a range from 1 second (s) to 20s). At 326, after the first period, the RF plasma power is supplied and the RF bias is turned off for a second period (e.g., in a range from 1 second (s) to 20s). At 330, after the second period, the method determines whether N = M, where N and M are integers, M is the total number of etch cycles, and M > N. If 330 is false, the method increments N at 334 and returns to 322 to perform the next RF pulsing cycle.

[0055] Referring now to FIG. 6, a method for performing atomic layer etching using RF pulsing is shown. At 410, the substrate is loaded into the processing chamber and the processing chamber is evacuated in a range from 5 mT to 2000mT. At 414, N is set to 1. At 318, the process gas mixture is supplied. At 422, the RF plasma power is supplied (frequency 40MHz to 100 MHz; power 10 to 2500W) and the RF bias is not supplied for first period (e.g., in a range from 1 second (s) to 20s). At 426, after the first period, the RF plasma power and the RF bias (frequency 400kHz to 14 MHz; power 10 to 2500W) are supplied for a second period (e.g., in a range from 1 second (s) to 20s). At 430, after the second period, the method determines whether N = M, where N and M are integers, M is the total number of ALE cycles, and M > N. If 430 is false, the method increments N at 334 and returns to 322 to perform the next ALE cycle.

[0056] Referring now FIG. 7, an example of hard mask loss as a function of profile angle (a) during etching with the RF plasma source and the RF bias are connected to the lower electrode and (b) during etching with the RF plasma source decoupled from the RF bias as described herein. As can appreciated, the hard mask loss was reduced by over 1 nm.

[0057] Referring now FIG. 8, ion density is shown as a function of ion energy (a) during etching with the RF plasma source and the RF bias are connected to the lower electrode (below the line) and (b) during etching with the decoupled RF plasma source (above the line) as described herein. By decoupling the RF plasma power from the RF bias, processing at lower ion energy and higher ion flux can be achieved.

[0058] The foregoing description is merely illustrative in nature and is in no way intended to limit the disclosure, its application, or uses. The broad teachings of the disclosure can be implemented in a variety of forms. Therefore, while this disclosure includes particular examples, the true scope of the disclosure should not be so limited since other modifications will become apparent upon a study of the drawings, the specification, andAttorney Docket No. 12100-1 WOHDP Ref. No. 15545-001318-WO-POAthe following claims. It should be understood that one or more steps within a method may be executed in different order (or concurrently) without altering the principles of the present disclosure. Further, although each of the embodiments is described above as having certain features, any one or more of those features described with respect to any embodiment of the disclosure can be implemented in and / or combined with features of any of the other embodiments, even if that combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and permutations of one or more embodiments with one another remain within the scope of this disclosure.

[0059] Spatial and functional relationships between elements (for example, between modules, circuit elements, semiconductor layers, etc.) are described using various terms, including “connected,” “engaged,” “coupled,” “adjacent,” “next to,” “on top of,” “above,” “below,” and “disposed.” Unless explicitly described as being “direct,” when a relationship between first and second elements is described in the above disclosure, that relationship can be a direct relationship where no other intervening elements are present between the first and second elements, but can also be an indirect relationship where one or more intervening elements are present (either spatially or functionally) between the first and second elements. As used herein, the phrase at least one of A, B, and C should be construed to mean a logical (A OR B OR C), using a non-exclusive logical OR, and should not be construed to mean “at least one of A, at least one of B, and at least one of C.”

[0060] In some implementations, a controller is part of a system, which may be part of the above-described examples. Such systems can comprise semiconductor processing equipment, including a processing tool or tools, chamber or chambers, a platform, or platforms for processing, and / or specific processing components (a wafer pedestal, a gas flow system, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate. The electronics may be referred to as the “controller,” which may control various components or subparts of the system or systems. The controller, depending on the processing requirements and / or the type of system, may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and / or load locks connected to or interfaced with a specific system.Attorney Docket No. 12100-1 WOHDP Ref. No. 15545-001318-WO-POA

[0061] Broadly speaking, the controller may be defined as electronics having various integrated circuits, logic, non-transitory memory, and / or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system. The operational parameters may, in some embodiments, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0062] The controller, in some implementations, may be a part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the “cloud” or all or a part of a fab host computer system, which can allow for remote access of the wafer processing. The computer may enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to a system over a network, which may include a local network or the Internet. The remote computer may include a user interface that enables entry or programming of parameters and / or settings, which are then communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, such as by comprising one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber inAttorney Docket No. 12100-1 WOHDP Ref. No. 15545-001318-WO-POAcommunication with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) that combine to control a process on the processing chamber.

[0063] Without limitation, example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that may be associated or used in the fabrication and / or manufacturing of semiconductor wafers.

[0064] As noted above, depending on the process step or steps to be performed by the tool, the controller might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and / or load ports in a semiconductor manufacturing factory.

Claims

Attorney Docket No. 12100-1 WOHDP Ref. No. 15545-001318-WO-POACLAIMSWhat is claimed is:

1. A substrate processing system, comprising:a substrate support arranged in a processing chamber, configured to support a substrate, and including a first electrode;a gas distribution device configured to supply a gas mixture;a second electrode arranged above the substrate support;an RF bias generator configured to selectively supply an RF bias to the first electrode;an RF plasma generator configured to selectively supply RF plasma power to the second electrode; anda controller configured to:evacuate the processing chamber to a predetermined pressure; during each etching cycle:supply RF plasma power to the second electrode to at least one of strike and maintain plasma in the processing chamber;supply an RF bias to the first electrode during one of a first period and a second period of the etching cycle; andnot supply the RF bias to the first electrode during the other of the first period and the second period of the etching cycle.

2. The substrate processing system of claim 1 , wherein the predetermined pressure is in a range from 2 m illiTorr (mT) to 2000 mT.

3. The substrate processing system of claim 2, wherein the predetermined pressure is in a range from 10 mT to 100mT.

4. The substrate processing system of claim 1 , wherein the gas distribution device includes the second electrode.

5. The substrate processing system of claim 1, wherein the substrate support comprises an electrostatic chuck and the second electrode comprises a baseplate of the electrostatic chuck.Attorney Docket No. 12100-1 WOHDP Ref. No. 15545-001318-WO-POA6. The substrate processing system of claim 1 , wherein a frequency of the RF plasma power supplied by the RF plasma generator is in a range from 40 MHz to 100MHz.

7. The substrate processing system of claim 1, wherein the RF plasma power supplied by the RF plasma generator is in a range from 10W to 2500W.

8. The substrate processing system of claim 1, wherein the RF plasma power supplied by the RF plasma generator is in a range from 50W to 500W.

9. The substrate processing system of claim 1 , wherein a frequency of the RF bias supplied by the RF bias generator is in a range from 400 kHz to 14MHz.

10. The substrate processing system of claim 9, wherein a power of the RF bias supplied by the RF bias generator is in a range from 10W to 2500W.

11. The substrate processing system of claim 9, wherein a power of the RF bias supplied by the RF bias generator is in a range from 10W to 200W.

12. The substrate processing system of claim 1, wherein the RF plasma generator generates ions having an ion energy in a range from 20eV to 60eV.

13. The substrate processing system of claim 1, wherein the RF bias generator generates ions having an ion energy in a range from 60eV to 2000eV.

14. The substrate processing system of claim 1, wherein the controller performs RF pulsing by turning the RF bias on during the first period of the etching cycle and turning the RF bias off during the second period of the etching cycle.

15. The substrate processing system of claim 1, wherein the controller performs atomic layer etch (ALE) by turning the RF bias off during the first period of the etching cycle and turning the RF bias on during the second period of the etching cycle.

16. The substrate processing system of claim 1, wherein the gas distribution device supplies a gas mixture to the processing chamber including:Attorney Docket No. 12100-1 WOHDP Ref. No. 15545-001318-WO-POAa first gas selected from a group consisting of hydrogen fluoride (HF), CxFy, CHxFy, COx, and combinations thereof, where x and y are integers; anda second gas selected from a group consisting of argon (Ar), helium (He), neon (Ne), molecular oxygen (O2), molecular nitrogen (N2), and combinations thereof.

17. The substrate processing system of claim 1, wherein the first period and the second period have a duration in a range from 1 second to 20 seconds.

18. A method for processing a substrate, comprising:arranging a substrate on a substrate support in a processing chamber, wherein the substrate support includes a first electrode;evacuating the processing chamber to a predetermined pressure;supplying a gas mixture to the processing chamber; andduring each etching cycle:supplying RF plasma power to a second electrode arranged above the substrate support to at least one of strike and maintain plasma in the processing chamber;supplying an RF bias to the first electrode during one of a first period and a second period of the etching cycle; andnot supplying the RF bias to the first electrode during the other of the first period and the second period of the etching cycle.

19. The method of claim 18, wherein the predetermined pressure is in a range from 2 m illiTorr (mT) to 2000 mT.

20. The method of claim 18, wherein the predetermined pressure is in a range from 10 mT to 100mT.

21. The method of claim 18, wherein the second electrode is arranged in a gas distribution device.

22. The method of claim 18, wherein the substrate support comprises an electrostatic chuck and the second electrode comprises a baseplate of the electrostatic chuck.Attorney Docket No. 12100-1 WOHDP Ref. No. 15545-001318-WO-POA23. The method of claim 18, wherein a frequency of the RF plasma power is in a range from 40 MHz to 100MHz.

24. The method of claim 18, wherein the RF plasma power is in a range from 10W to 2500W.

25. The method of claim 18, wherein the RF plasma power is in a range from 50W to 500W.

26. The method of claim 18, wherein a frequency of the RF bias is in a range from 400 kHz to 14MHz.

27. The method of claim 18, wherein a power of the RF bias is in a range from 10W to 2500W.

28. The method of claim 18, wherein a power of the RF bias is in a range from 10W to 200W.

29. The method of claim 18, wherein the RF plasma power generates ions having an ion energy in a range from 20eV to 60eV.

30. The method of claim 18, wherein the RF bias generates ions having an ion energy in a range from 60eV to 2000eV.

31. The method of claim 18, further comprising performing RF pulsing by turning the RF bias on during the first period of the etching cycle and turning the RF bias off during the second period of the etching cycle.

32. The method of claim 18, further comprising performing atomic layer etch (ALE) by turning the RF bias off during the first period of the etching cycle and turning the RF bias on during the second period of the etching cycle.Attorney Docket No. 12100-1 WOHDP Ref. No. 15545-001318-WO-POA33. The method of claim 18, wherein the gas mixture includes:a first gas selected from a group consisting of hydrogen fluoride (HF), CxFy, CHxFy, COx, and combinations thereof, where x and y are integers; anda second gas selected from a group consisting of argon (Ar), helium (He), neon (Ne), molecular oxygen (O2), molecular nitrogen (N2), and combinations thereof.

34. The method of claim 18, wherein the first period and the second period have a duration in a range from 1 second to 20 seconds.

35. A substrate processing system, comprising:a substrate support arranged in a processing chamber, configured to support a substrate, and including a first electrode;a gas distribution device configured to supply a gas mixture;a second electrode arranged in a plasma processing chamber above the substrate support;an RF plasma generator configured to selectively supply RF plasma power to the second electrode;an RF bias generator configured to selectively supply an RF bias to the first electrode; anda controller configured to:evacuate the processing chamber to a predetermined pressure; and during each etching cycle:supply the RF plasma power at a frequency in a range from 40 MHz to 100MHz to the second electrode to strike and maintain plasma;supply the RF bias at a frequency in a range from 400kHz to 14 MHz to the first electrode during one of a first period and a second period of the etching cycle; andnot supply the RF bias to the first electrode during the other of the first period and the second period of the etching cycle.Attorney Docket No. 12100-1 WOHDP Ref. No. 15545-001318-WO-POA36. A substrate processing system, comprising:a substrate support arranged in a processing chamber, configured to support a substrate, and including a first electrode;a gas distribution device configured to supply a gas mixture;a second electrode arranged above the substrate support;an RF bias generator configured to selectively supply an RF bias to the first electrode;an RF plasma generator configured to selectively supply RF plasma power to the second electrode; anda controller configured to:evacuate the processing chamber to a predetermined pressure; and during each etching cycle:supply the RF plasma power to the second electrode to strike and maintain plasma in the processing chamber, wherein the RF plasma power generates ions having an ion energy in a range from 20eV to 60 eV; andsupply the RF bias to the first electrode during one of a first period and a second period of the etching cycle, wherein the RF bias generates ions having an ion energy in a range from 60 eV to 2000eV; andnot supply the RF bias to the first electrode during the other of the first period and the second period of the etching cycle.

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