Wafer spin-drying mechanism

Abstract

Disclosed in the present invention is a wafer spin-drying mechanism, comprising: a rotating platform; and a plurality of jaws, which are connected to the rotating platform and are circumferentially distributed at intervals, wherein each jaw has a support surface and a clamping surface on the side thereof facing a wafer, or each jaw and the rotating platform cooperate to form a support surface and a clamping surface, the support surface and the clamping surface being configured to jointly clamp the wafer; and a centrifugal liquid guide and discharge groove is provided between the support surface and the clamping surface. When the support surface and the clamping surface clamp the wafer, at least a portion of the centrifugal liquid guide and discharge groove is located at the height of the lower surface of the wafer or below; and when the wafer rotates, liquid that remains on the back face of the wafer enters the centrifugal liquid guide and discharge groove under the action of a centrifugal force, and is discharged outwards by means of the centrifugal force. The present invention designs the centrifugal liquid guide and discharge groove, which can provide, during centrifugal spin-drying, a guide and discharge space for the liquid flowing radially across the support surface and its vicinity to leave the wafer, such that the residual liquid can be smoothly discharged.

Description

A wafer rotary drying mechanism Technical Field

[0001] This invention belongs to the field of semiconductor integrated circuit chip manufacturing technology, and in particular relates to a wafer rotation drying mechanism. Background Technology

[0002] In semiconductor wafer manufacturing, wafer cleaning and drying are critical steps throughout the entire process, primarily used to remove contaminants, improve yield, and ensure the stability of subsequent processes. Cleaning and drying are integrated into six core stages of wafer manufacturing: photolithography, ion implantation, CMP, etching, polishing, and packaging, directly impacting device performance and yield. The future trend is the combination of wet and dry cleaning technologies, and the development of low-energy, highly uniform automated cleaning solutions.

[0003] With the continuous advancement of semiconductor manufacturing technology, the requirements for cleanliness and drying in Chemical Mechanical Planarization (CMP) equipment are becoming increasingly stringent. During the wet wafer processing, ensuring thorough drying of the wafer and preventing particles from the solution from re-adhering to its surface is crucial. If the wafer is not sufficiently dried, particles in the solution may affect the performance of semiconductor devices, leading to equipment malfunction. Therefore, effectively removing liquid from the wafer plays a key role in ensuring the normal operation of the equipment. CMP equipment must employ appropriate methods to achieve efficient wafer drying to ensure production quality and equipment stability.

[0004] In most CMP equipment, wafer drying typically employs a centrifugal spin-drying method. Structurally, this method mainly includes a clamping device and a support device. The wafer exists in three stages and three states within the drying mechanism: ① Before drying, it is placed on the support device, with both the front and back sides of the wafer wet; ② During centrifugal spin-drying, the clamping device holds the wafer and rotates it. Due to centrifugal force, the liquid on both sides of the wafer must be completely spun out during this process, achieving drying; ③ After drying, the wafer rotation stops, the clamping device releases the wafer, and the wafer is completely dry. The drying mechanism has completed its drying work, and the wafer can proceed to the next process. Whether the wafer can achieve a completely dry state is crucial in stage ②, the centrifugal spin-drying process. The success of wafer drying depends on whether the wafer can be completely spun out during this stage. The working principle of wafer drying is as follows: During stage ②, the clamping device, placed on the support device, can passively drive and fix the wafer through centrifugal force or actively through cylinders, magnets, etc., to achieve this. A rotary motor drives the clamping device to rotate, thereby rotating the wafer. Centrifugal force throws the liquid off the wafer, achieving drying.

[0005] However, a difficult problem exists in practical use: during wafer rotation, the back side remains in contact with the support device, creating a small angle and water storage space between them. During the spin-drying stage, as the liquid wetting the back side of the wafer radially flows away from the center to the circumference, the liquid flowing radially through and near the support device is easily drawn into this space due to capillary action, as shown in Figures 23 and 24. This means that although most of the front and back sides of the wafer can be dried, the liquid at the contact point between the back side and the support device, and in its vicinity (the space where liquid is drawn in due to capillary action), is difficult to dry. When the centrifugal spin-drying process ends and the wafer stops rotating, water droplets and stains remain at the contact point between the back side and the support device, which is unacceptable (normally, no water droplets or stains should remain on the entire back side of the wafer). For high-standard, high-process CMP equipment, the dryness and cleanliness of the wafer's back side are crucial indicators for evaluating the process. These residual water droplets and stains will severely affect the overall quality and efficiency of the CMP process. Summary of the Invention

[0006] To overcome the shortcomings of existing technologies, this invention provides a wafer rotary drying mechanism. It solves the problem that water droplets and stains are easily left behind and difficult to remove at the contact point between the back side of the wafer and the support surface during centrifugal rotary drying.

[0007] The technical solution adopted by this invention to solve its technical problem is: a wafer rotary drying mechanism, comprising,

[0008] Rotating platform;

[0009] The chucks are connected to the rotating platform, and there are multiple chucks that are circumferentially spaced.

[0010] The jaws have a support surface and a clamping surface facing the wafer, or the jaws and the rotating platform cooperate to form a support surface and a clamping surface, which are used to clamp the wafer together;

[0011] There is a centrifugal draining tank between the support surface and the clamping surface. When the support surface and the clamping surface clamp the wafer, at least a part of the centrifugal draining tank is located below the height of the lower surface of the wafer. When the wafer rotates, the liquid that remains on the back side of the wafer enters the centrifugal draining tank under the action of centrifugal force and is discharged outward by centrifugal force.

[0012] Furthermore, there is a gap between the back side of the wafer and the support surface, and some liquid remains in the gap due to capillary effect.

[0013] Furthermore, at least a portion of the centrifugal drain tank is parallel to the tangential direction of the wafer placed on the rotating platform.

[0014] Furthermore, the centrifugal drain tank is arc-shaped, and the circle fitted by the centrifugal drain tank of multiple claws is concentric with the wafer placed on the rotating platform.

[0015] Furthermore, at least a portion of the centrifugal drain tank is located below the height of the lower surface of the wafer, including both a state where the wafer is stationary on the rotating platform and a state where the wafer and the rotating platform are rotating at high speed.

[0016] Furthermore, both ends of the centrifugal drainage tank are open.

[0017] Furthermore, the wafer side has at least a lower rounded corner section and a straight section, and the centrifugal drain tank has an opening with a width less than or equal to the width of the lower rounded corner section.

[0018] Furthermore, the wafer side has at least a lower rounded corner segment and a straight segment, and the clamping surface abuts against the straight segment.

[0019] Furthermore, the centrifugal drain tank has an opening, the height of which is less than or equal to the height of the lower rounded corner section.

[0020] Furthermore, the wafer side has an upper rounded corner section; the chuck is provided with a limiting surface to prevent the wafer from detaching upwards, the limiting surface being located above the clamping surface and abutting against the upper rounded corner section.

[0021] Furthermore, the center of the centrifugal drain tank is located below the highest point of the support surface.

[0022] Furthermore, the inner wall of the centrifugal drain tank is an arc surface.

[0023] Furthermore, the support surface includes a horizontal placement surface and a climbing surface located on the outer periphery of the horizontal placement surface, and the centrifugal drain tank is located between the clamping surface and the climbing surface.

[0024] Furthermore, the climbing surface is an arc-shaped climbing surface.

[0025] Furthermore, the number of rotating platforms is one, and the number of chucks is three or more, which are evenly spaced along the circumference of the rotating platform. When the rotating platform rotates, the upper part of the chucks rotates inward and downward, and the support surface and the clamping surface together clamp the wafer.

[0026] or,

[0027] Multiple rotating platforms are connected to a rotating base, and chucks are eccentrically connected to the rotating platforms. When the rotating platforms rotate, the chucks move closer to the wafer as the rotating platforms rotate.

[0028] The beneficial effects of this invention are: 1) During centrifugal rotation, the tiny gap between the back side of the wafer and the support surface easily stores liquid. This liquid is difficult to remove due to capillary effect and surface tension, resulting in water droplets and stains remaining at and near the contact point between the back side of the wafer and the support surface after drying. This invention designs a centrifugal drainage tank that provides a guiding and discharge space for liquid flowing radially across the support surface and its vicinity during centrifugal rotation drying, allowing residual liquid to drain smoothly; 2) The centrifugal drainage tank can be parallel to the tangential direction of the wafer, allowing the liquid accumulated inside to drain quickly; 3) The design of the centrifugal drainage tank can simultaneously achieve drainage and venting effects; 4) The centrifugal drainage tank does not affect the stable clamping of the wafer during centrifugal rotation drying—there is sufficient contact area between the clamping surface and the straight section of the wafer to provide sufficient friction, ensuring the wafer is firmly clamped, and the support surface contacts the lower rounded corner section of the wafer, avoiding scratches on the back side of the wafer; 5) Centrifugal... The ingenious structural design of the centrifugal drain tank ensures that at least part of it is located below the height of the wafer's lower surface, preventing residual liquid from splashing back onto the wafer's back side and forming water stains. 6) The limiting surface abuts against the rounded corners of the wafer, creating a restraining effect and preventing wafer detachment. 7) Under centrifugal force, residual liquid at the contact point between the wafer's back side and the support surface is smoothly drained through the centrifugal drain tank, thus preventing water stain formation. This improvement not only solves a major drawback of the original structure but also requires no major modifications to the original structure, exhibiting high practicality and compatibility. 8) It not only improves work efficiency and level but also promotes the development of existing equipment towards higher processes, while further enhancing the cleaning effect of the wafer back side, providing a more reliable guarantee for high-process applications of CMP equipment. 9) The centrifugal drain tank structure can adapt to different chuck structures and is suitable for post-cleaning in different stages of semiconductor processes, demonstrating high adaptability. Attached Figure Description

[0029] Figure 1 is a side view of the wafer in this invention.

[0030] Figure 2 is a perspective view of the first type of wafer rotary drying mechanism and wafer assembly in this invention.

[0031] Figure 3 is a partial perspective view of the first type of wafer rotary drying mechanism in this invention.

[0032] Figure 4 is an enlarged view of the structure at point A in Figure 3.

[0033] Figure 5 is a partial perspective view of the first type of wafer rotary drying mechanism in this invention.

[0034] Figure 6 is an enlarged view of the structure at point B in Figure 5.

[0035] Figure 7 is a schematic diagram of the structure of the jaws of the first type of wafer rotary drying mechanism in this invention.

[0036] Figure 8 is a partial schematic diagram of the wafer rotary drying mechanism and wafer assembly in the first structure of the present invention.

[0037] Figure 9 is a schematic diagram of the centrifugal drain tank of the first type of wafer rotary drying mechanism in this invention.

[0038] Figure 10 is a perspective view of the second type of wafer rotary drying mechanism in this invention.

[0039] Figure 11 is an enlarged view of the structure at point C in Figure 10.

[0040] Figure 12 is a side view of the part of the wafer rotary drying mechanism of the second structure in this invention where the chucks are located.

[0041] Figure 13 is a partial schematic diagram of the wafer rotary drying mechanism and wafer assembly in the second structure of the present invention.

[0042] Figure 14 is a schematic diagram of the centrifugal drain tank of the second type of wafer rotary drying mechanism in this invention.

[0043] Figure 15 is a schematic diagram of the jaws and rotating platform of the third type of wafer rotary drying mechanism in this invention.

[0044] Figure 16 is a side view of the jaws and rotating platform of the third type of wafer rotary drying mechanism in this invention.

[0045] Figure 17 is a partial schematic diagram of the wafer rotary drying mechanism and wafer assembly in the third structure of the present invention.

[0046] Figure 18 is a schematic diagram of the centrifugal drain tank of the third type of wafer rotary drying mechanism in this invention.

[0047] Figure 19 is a top view of the centrifugal drain tank and the wafer placed on the rotating platform in this invention.

[0048] Figure 20 is an enlarged view of the structure at point D in Figure 19.

[0049] Figure 21 is a top view of the centrifugal drain tank and the wafer placed on the rotating platform according to the present invention.

[0050] Figure 22 is an enlarged view of the structure at point E in Figure 21.

[0051] Figure 23 is a partial schematic diagram of the cooperation between the wafer and the support device in the prior art.

[0052] Figure 24 is an enlarged view of the structure at point F in Figure 23. The space where liquid is drawn in due to capillary effect is labeled 6.

[0053] Among them, 1-rotating platform, 2-claw, 21-limiting surface, 3-wafer, 31-lower rounded corner section, 32-straight section, 33-upper rounded corner section, 41-supporting surface, 411-horizontal placement surface, 412-climbing surface, 42-clamping surface, 5-centrifugal drain tank, 51-opening, 6-space for liquid to be drawn in due to capillary effect. Detailed Implementation

[0054] To enable those skilled in the art to better understand the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0055] A wafer rotary drying mechanism includes one or more rotary platforms 1 and multiple chucks 2 connected to the rotary platforms 1. The chucks 2 are distributed circumferentially, either along the circumference of the wafer 3 or along the circumference of the rotary platform 1; the specific direction is not limited. Specifically, one chuck 2 can be mounted on one rotary platform 1, in which case there are multiple chucks 2 and multiple rotary platforms 1, all connected to the same rotary base (not shown in the figure); alternatively, multiple chucks 2 can be mounted on one rotary platform 1, in which case there are multiple chucks 2 and one rotary platform 1.

[0056] The jaw 2 has a support surface 41 and a clamping surface 42 on the side facing the wafer 3. In other words, the jaw 2 and the rotating platform 1 cooperate to form the support surface 41 and the clamping surface 42, which are used to clamp the wafer 3 together.

[0057] A centrifugal drain trough 5 is provided between the support surface 41 and the clamping surface 42. When the support surface 41 and the clamping surface 42 clamp the wafer 3, i.e., during the centrifugal rotary drying process (②), at least a portion of the centrifugal drain trough 5 is located below the height of the lower surface of the wafer 3. This allows the liquid that has radially flowed through the support device and its vicinity during the centrifugal rotary drying process (②) to be smoothly discharged through the centrifugal drain trough 5. In particular, the liquid will not accumulate in the narrow gap between the back side of the wafer 3 and the support surface 41. The liquid on the back side of the wafer 3 can be discharged through the centrifugal drain trough 5. That is, the liquid drawn into the space between the back side of the wafer 3 and the support surface 41 due to capillary effect is discharged through the centrifugal drain trough 5 under the action of centrifugal force, avoiding the formation of water stains on the surface of the wafer 3. Of course, the centrifugal drain trough 5 not only serves to drain water but also to vent air, effectively reducing the surface tension of the liquid, which is beneficial for the liquid to be discharged through the centrifugal drain trough 5.

[0058] In this embodiment, the centrifugal drain tank 5 is open at both ends, so that when the rotating platform 1 and the jaws 2 rotate the wafer 3, the liquid remaining on the back of the wafer 3 enters the centrifugal drain tank 5 under the action of centrifugal force. Furthermore, under the action of centrifugal force, the liquid in the centrifugal drain tank 5 is discharged directly to the outside through the open ports at both ends, effectively preventing the liquid from flowing back to the back of the wafer 3, resulting in a better drying effect.

[0059] As shown in Figures 19 and 20, at least a portion of the centrifugal drain tank 5 is parallel to the tangential direction of the wafer 3 placed on the rotating platform 1. Under the action of centrifugal force, the direction in which the liquid is thrown off the wafer 3 is approximately the tangential direction of the wafer. By designing the centrifugal drain tank 5 to be parallel to the tangential direction of the wafer, the liquid thrown off the surface of the wafer 3 can be discharged to the two open ends of the centrifugal drain tank 5 more quickly.

[0060] As shown in Figures 21 and 22, the centrifugal drain tank 5 can also be arc-shaped, and the circle fitted by the centrifugal drain tank 5 of the multiple claws 2 is concentric with the wafer 3 placed on the rotating platform 1. In other words, the centrifugal drain tank 5 and the outer periphery of the wafer 3 are parallel to each other.

[0061] Since the length of the centrifugal drain tank 5 is very small compared to the outer perimeter of the wafer 3, and its arc-shaped central angle is also relatively small, it will not cause the liquid to fall back onto the surface of the wafer 3 when it is thrown out of the centrifugal drain tank 5.

[0062] As shown in Figures 2-9, there is one rotating platform 1 and three chucks 2, which are evenly spaced around the rotating platform 1 and rotate in conjunction with it. Of course, there can be more than three chucks 2. The support surface 41 is set on the rotating platform 1, and the support surface 41 is a sloping structure that slopes from bottom to top and from inside to outside (taking the direction shown in Figure 8 as an example, here "inside" refers to the inner side where the center of wafer 3 is located). The clamping surface 42 is set on the chucks 2.

[0063] When the rotating platform 1 rotates, under the action of centrifugal force, the upper part of the chuck 2 rotates inward and downward, and the support surface 41 and the clamping surface 42 jointly clamp the wafer 3. At this time, the centrifugal drain tank 5 is formed by the cooperation of the chuck 2 and the rotating platform 1, that is, part of the centrifugal drain tank 5 is located on the chuck 2, and part of the centrifugal drain tank 5 is located on the rotating platform 1.

[0064] As shown in Figures 1 and 9, the side of wafer 3 has a lower rounded corner segment 31, a straight segment 32, and an upper rounded corner segment 33. The clamping surface 42 abuts against the straight segment 32. In other words, in this embodiment, the clamping surface 42 is a vertical plane, or at least when the wafer 3 is clamped, the clamping surface 42 is a vertical plane.

[0065] As shown in Figure 9, the centrifugal drain tank 5 has an opening 51, the width of which is less than or equal to the width of the lower rounded corner segment 31. Here, the width of the opening 51 is L1, specifically referring to the width of the opening 51 of the centrifugal drain tank 5 when the chuck 2 forms an arc groove below the clamping surface 42, and the supporting surface 41 of the rotating platform 1 also forms an arc groove, with the two arc grooves combined to form the opening 51 of the centrifugal drain tank 5 in the state of clamping the wafer 3. The width of the lower rounded corner segment 31 refers to the horizontal distance between the two endpoints of the lower rounded corner segment 31, i.e., L2 in Figure 1. L1 ≤ L2, thus ensuring that throughout the entire process of the wafer 3 being placed flat on the supporting surface 41 and clamped by the supported surface 41 and the clamping surface 42, the supporting surface 41 always contacts the lower rounded corner segment 31 of the wafer 3, and the flat portion on the back of the wafer 3 avoids contact with the supporting surface 41 as much as possible, preventing scratches on the back of the wafer 3.

[0066] The height of the opening 51 of the centrifugal drain tank 5 is less than or equal to the height of the lower rounded corner section 31. Here, the height of the lower rounded corner section 31 refers to the vertical distance between the two endpoints of the lower rounded corner section 31, i.e., S in Figure 1. The height of the opening 51 of the centrifugal drain tank 5 is H in Figure 9. Therefore, H≤S, which ensures that when clamping the wafer 3, the clamping surface 42 can abut against the straight section 32 on the side of the wafer 3 as much as possible, ensuring that there is sufficient contact area between the clamping surface 42 and the wafer 3 to provide sufficient friction force, ensuring that the wafer 3 is firmly clamped and preventing the wafer 3 from flying out.

[0067] To prevent the wafer 3 from detaching upwards during high-speed rotation, as shown in Figure 9, the chuck 2 is provided with a limiting surface 21 to prevent the wafer 3 from detaching upwards. The limiting surface 21 is located above the clamping surface 42 and extends inclinedly from top to bottom and from inside to outside. Thus, when the wafer 3 is clamped, the limiting surface 21 can abut against the upper rounded corner segment 33, thereby the limiting surface 21 forms a downward and inward force on the wafer 3.

[0068] The center of the centrifugal drain tank 5 is located below the height of the support surface 41, specifically referring to the maximum height of the support surface 41. This ensures that the liquid ejected from the rotating dryer of wafer 3 will not flow back to wafer 3, or in other words, as little liquid as possible will splash back onto the back of wafer 3.

[0069] As described above, the centrifugal drain tank 5 is formed by the combination of the support surface 41 and the arc groove of the claw 2, thus the inner wall of the centrifugal drain tank 5 is an arc surface. Combining the arc shape of the centrifugal drain tank 5 and the fact that its center is located below the height of the support surface 41, it can prevent residual liquid from splashing back onto the back side of the wafer 3 after entering the centrifugal drain tank 5. Water droplets enter from the opening 51 of the centrifugal drain tank 5, hit the inner wall of the arc surface of the centrifugal drain tank 5, and bounce. After bouncing, most water droplets entering from any angle of the opening 51 of the centrifugal drain tank 5 will move towards the center of the centrifugal drain tank 5. Since the center of the centrifugal drain tank 5 is located below the back side of the wafer 3, it can effectively guide the liquid entering the centrifugal drain tank 5 to a position below the back side of the wafer 3, thereby preventing it from splashing back onto the back side of the wafer 3 and preventing water stains from forming on the back side of the wafer 3. Of course, in other embodiments, the specific shape of the centrifugal drain tank 5 is not limited.

[0070] Unlike the structure formed by the above-mentioned jaw 2 and rotating platform 1 to form a support surface 41 and a clamping surface 42, as shown in Figures 10-14, the support surface 41 and the clamping surface 42 are both set on the jaw 2, and the centrifugal drain tank 5 is opened on the jaw 2 and is located between the support surface 41 and the clamping surface 42.

[0071] At this point, the centrifugal drain tank 5 is not formed by assembling two parts; it has a fixed shape. However, when the chuck 2 is not clamping the wafer 3, the opening 51 of the centrifugal drain tank 5 faces upwards. When the chuck 2 is clamping the wafer 3, the opening 51 of the centrifugal drain tank 5 faces the lower rounded corner 31 of the wafer 3. The width and height of the opening 51 of the centrifugal drain tank 5, and the center of the centrifugal drain tank 5, are the same as those of the wafer rotary drying mechanism in the first structure, and will not be described further.

[0072] As shown in Figure 11, the support surface 41 includes a horizontal placement surface 411, which is a climbing surface 412 located on the outer periphery of the horizontal placement surface 411. The centrifugal drain tank 5 is located between the clamping surface 41 and the climbing surface 412, and the climbing surface 412 is an arc-shaped climbing surface. The wafer 3 is first placed on the horizontal placement surface 411. After the rotating platform 1 rotates, under the action of centrifugal force, the upper part of the chuck 2 rotates inward and downward, and the wafer 3 moves along the climbing surface 412. Finally, the climbing surface 412 and the clamping surface 42 together clamp the wafer 3.

[0073] The center of the centrifugal drain tank 5 is located below the highest height of the climbing surface 412. In other words, the center of the arc-shaped centrifugal drain tank 5 is located at the outer and lower side of the wafer.

[0074] The other structures of the second type of wafer rotary drying mechanism are the same as those of the first type, and will not be described again.

[0075] As shown in Figures 15-18, in the third type of wafer rotary drying mechanism, the lower cylindrical body with a larger outer diameter is the rotary platform 1, and the upper eccentrically connected structure is the chuck 2. The rotary base (not shown in the figure) connects multiple rotary platforms 1 into one unit. The rotary platform 1 can rotate relative to the rotary base. The rotary base drives multiple rotary platforms 1, multiple chucks 2 and wafer 3 to rotate at high speed together, realizing the centrifugal rotary drying of wafer 3.

[0076] The wafer 3 is first placed on the support surface 41 of the chuck 2. In this embodiment, the support surface 41 is a sloping structure that is inclined from bottom to top and from inside to outside (taking the direction shown in Figure 16 as an example, the inside here refers to the inner side where the center of the wafer 3 is located). At this time, the wafer 3 is not in contact with the clamping surface 42. Then, the chuck 2 rotates relative to the rotating base with the rotating platform 1, so that the chuck 2 moves closer to the wafer 3, so that the clamping surface 42 contacts the straight section 32 of the wafer 3, thereby realizing the clamping of the wafer 3 by the support surface 41 and the clamping surface 42.

[0077] The other structures of this third type of wafer rotary drying mechanism are the same as those of the second type mentioned above, and will not be described again.

[0078] The aforementioned wafer rotary drying mechanism can be applied to the photolithography process, the ion implantation process, the CMP process, the etching process, the grinding process, or the packaging process in wafer manufacturing, without any specific limitations.

[0079] The above specific embodiments are used to explain and illustrate the present invention, but not to limit the present invention. Any modifications and changes made to the present invention within the spirit and scope of the claims shall fall within the protection scope of the present invention.

Claims

1. A wafer rotary drying mechanism, comprising, Rotating platform (1); The claws (2) are connected to the rotating platform (1), and there are multiple claws that are circumferentially spaced. The jaw (2) has a support surface (41) and a clamping surface (42) on the side facing the wafer (3), or the jaw (2) and the rotating platform (1) cooperate to form a support surface (41) and a clamping surface (42), and the support surface (41) and the clamping surface (42) are used to clamp the wafer (3) together. characterized in that There is a centrifugal drain tank (5) between the support surface (41) and the clamping surface (42). When the support surface (41) and the clamping surface (42) clamp the wafer (3), at least part of the centrifugal drain tank (5) is located below the height of the lower surface of the wafer (3). When the wafer (3) rotates, the liquid that remains on the back side of the wafer (3) enters the centrifugal drain tank (5) under the action of centrifugal force and is discharged outward by centrifugal force.

2. The wafer spin-drying mechanism according to claim 1, characterized by: There is a gap between the back side of the wafer (3) and the support surface (41), and some liquid is retained in the gap due to capillary effect.

3. The wafer spin-drying mechanism according to claim 1, characterized by: At least a portion of the centrifugal drain tank (5) is parallel to the tangential direction of the wafer (3) placed on the rotating platform (1).

4. The wafer spin-drying mechanism according to claim 1, characterized by: The centrifugal drain tank (5) is arc-shaped, and the circle fitted by the centrifugal drain tank (5) of the multiple claws (2) is concentric with the wafer (3) placed on the rotating platform (1).

5. The wafer spin-drying mechanism according to claim 1, characterized by: At least a portion of the centrifugal drain tank (5) is located below the height of the lower surface of the wafer (3), including the state in which the wafer (3) is stationary on the rotating platform (1), and also the state in which the wafer (3) and the rotating platform (1) are rotating at high speed.

6. The wafer spin-drying mechanism according to claim 1 or 3, characterized by: The centrifugal drain tank (5) is open at both ends.

7. The wafer spin-drying mechanism according to claim 1, characterized by: The wafer (3) has at least a lower rounded corner section (31) and a straight section (32) on its side, and the centrifugal drain tank (5) has an opening (51) with a width less than or equal to the width of the lower rounded corner section (31).

8. The wafer spin-drying mechanism according to claim 1, characterized by: The wafer (3) has at least a lower rounded corner segment (31) and a straight segment (32) on its side, and the clamping surface (42) abuts against the straight segment (32).

9. The wafer spin-drying mechanism according to claim 8, characterized by: The centrifugal drain tank (5) has an opening (51) whose height is less than or equal to the height of the lower rounded corner section (31).

10. The wafer spin-drying mechanism according to claim 8, characterized by: The wafer (3) has an upper rounded corner section (33) on its side; the chuck (2) is provided with a limiting surface (21) to prevent the wafer (3) from detaching upwards. The limiting surface (21) is located above the clamping surface (42) and can abut against the upper rounded corner section (33).

11. The wafer spin-drying mechanism according to claim 1, characterized by: The center of the centrifugal drain tank (5) is located below the highest height of the support surface (41).

12. The wafer spin-drying mechanism according to claim 1 or 11, characterized by: The inner wall of the centrifugal drain tank (5) is an arc surface.

13. The wafer spin-drying mechanism according to claim 1, characterized by: The support surface (41) includes a horizontal placement surface (411) and a climbing surface (412) located on the outer periphery of the horizontal placement surface (411). The centrifugal drain tank (5) is located between the clamping surface (41) and the climbing surface (412).

14. The wafer spin-drying mechanism according to claim 13, characterized by: The climbing surface (412) is an arc-shaped climbing surface.

15. The wafer rotary drying mechanism according to claim 1, characterized in that: The number of the rotating platforms (1) is one, and the number of the claws (2) is three or more than three, which are uniformly arranged along the circumference of the rotating platform (1), when the rotating platform (1) rotates, the upper part of the claw (2) rotates to the inner side and downward, and the supporting surface (41) and the clamping surface (42) jointly clamp the wafer (3); Or, A plurality of rotating platforms (1) are connected to a rotating base, and the claws (2) are eccentrically connected to the rotating platforms (1), when the rotating platform (1) rotates, the claw (2) rotates to approach the wafer (3) along with the rotating platform (1).

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