Micro light emitting diode substrate, micro light emitting diode display, and xr glass

Abstract

A micro light emitting diode substrate (100) has: a micro light emitting diode array in which a red light emitting AlGaInN micro light emitting diode (30), a green light emitting AlGaInN micro light emitting diode (40), and a blue light emitting AlGaInN micro light emitting diode (50) are arranged per pixel on an n-type GaN layer (11); and a transparent insulating film (21) on the micro light emitting diode array. A p-side electrode extraction electrode (22) that is connected to each of a plurality of p-side electrodes (19) which are provided for each diode through a contact hole (21a) of the transparent insulating film and an n-side electrode extraction electrode that is connected to an n-side electrode through another contact hole are provided. P-side wiring lines (24-26) are provided along the plurality of p-side electrodes of each diode.

Description

Micro light-emitting diode substrate, micro light-emitting diode display and XR glasses

[0001] The present invention relates to a micro light-emitting diode substrate, a micro light-emitting diode display and XR (Cross Reality) glasses.

[0002] In a GaN-based light-emitting diode (LED) manufactured by growing a gallium nitride (GaN)-based semiconductor on a sapphire substrate, a very large number of threading dislocations exist in the crystal. Threading dislocations include edge dislocations, screw dislocations, and mixed dislocations formed by mixing edge dislocations and screw dislocations. Current leakage occurs in LED chips due to threading dislocations. In most cases, the leakage current is at a negligible level, but depending on the type of dislocations and the concentration state of dislocations, there are a very small number (usually less than 1%) of defects caused by non-negligible leakage current (leakage defects). It is extremely difficult to reduce this leakage defect rate to 0%.

[0003] In the manufacturing of conventional micro light-emitting diode displays, a process of transferring LED chips to a secondary substrate is used. In addition, molten solder is generally used to firmly and electrically connect the LED chips to the secondary substrate. When a display with an ultra-high pixel density of thousands of ppi is manufactured with micro LEDs, one pixel size is several μm square, so the LED chip size is miniaturized to be smaller than that.

[0004] When a micro LED chip is used as a light source for a display, chips with leakage defects must be removed. However, since the chip size is extremely small, it is very difficult to pass current through each chip for measurement and sort out defective chips. Even if measurement can be performed, measuring tens of millions of LED chips requires an enormous amount of time, and the process cost is also enormous.

[0005] In the manufacturing of micro light-emitting diode displays, a mass transfer process has been proposed to transfer a large number of LED chips to a secondary substrate all at once. However, when the chip size of LED chips reaches the sub-micrometer order, extremely high-precision alignment is required. In addition, when solder is used for connecting the LED chips to the wiring of the secondary substrate, the risk of defects occurring due to problems such as solder bleeding also increases.

[0006] It is possible to omit the total inspection of all LED chips, connect the wiring on the secondary substrate to the LED chips with each other, and then apply current to the wiring to identify defective chips. However, depending on the number of pixels of the panel, the number of LED chips ranges from millions to tens of millions, and the number of leakage defect locations ranges from tens of thousands to hundreds of thousands. Replacing the defective LED chips is extremely difficult because both the pixels and the LED chips are very small. Even if replacing the LED chips themselves is possible, the replacement work (repair work) for all defective locations requires an enormous amount of time.

[0007] Even for conventional micro light-emitting diode displays (pixel size of several hundreds of micrometers square: tens to one hundred and tens of ppi), the current manufacturing yield is low, the manufacturing difficulty and manufacturing cost are high, resulting in a very high price, and they have not yet been popularized as consumer products. To reduce the manufacturing cost of micro light-emitting diode displays with ultra-high pixel density (pixel size of several micrometers square: thousands of ppi), it is necessary to solve the above problems.

[0008] If a see-through ultra-high pixel density micro light-emitting diode display can be manufactured at low cost, it can be used as an optical engine or display for XR glasses, and XR glasses with sufficient brightness that enable clear image recognition even in bright daylight can be realized.

[0009] Against the above background, the present inventor has proposed a micro light-emitting diode chip that is capable of emitting RGB light in a single chip and can achieve high luminous efficiency even when miniaturized, a micro light-emitting diode display using this micro light-emitting diode chip, and XR glasses using this micro light-emitting diode display (see Patent Document 1). The micro light-emitting diode chip of Patent Document 1 has, on an n-type GaN layer, at least one blue-emitting AlGaInN-based light-emitting diode structure, at least one green-emitting AlGaInN-based light-emitting diode structure, and at least one red-emitting AlGaInN-based light-emitting diode structure. The blue-emitting AlGaInN-based light-emitting diode structure, the green-emitting AlGaInN-based light-emitting diode structure, and the red-emitting AlGaInN-based light-emitting diode structure each comprise: an insulating film having at least one opening provided on the n-type GaN layer; a truncated polygonal pyramid-shaped GaN layer provided on the n-type GaN layer in the opening portion of the insulating film; a light-emitting layer provided along the top surface and side surfaces of the truncated polygonal pyramid-shaped GaN layer; a p-type GaN layer provided so as to cover the light-emitting layer; one or a plurality of mutually separated p-side electrodes provided on the top surface of the p-type GaN layer; and at least one n-side electrode provided on the n-type GaN layer in a portion where the truncated polygonal pyramid-shaped GaN layer is not provided. Let the number of each of the blue-emitting AlGaInN-based light-emitting diode structure, the green-emitting AlGaInN-based light-emitting diode structure, and the red-emitting AlGaInN-based light-emitting diode structure included in the entire micro light-emitting diode chip be N b , N g and N r , and let the number of said p-side electrodes provided on the top surface of said p-type GaN layer for each of the blue-emitting AlGaInN-based light-emitting diode structure, the green-emitting AlGaInN-based light-emitting diode structure, and the red-emitting AlGaInN-based light-emitting diode structure be N p , then N p ×N b ≧2, N p ×N g ≧2, N p ×N r ≧2.

[0010] Patent No. 7406292 Patent No. 5547076 Patent No. 5687731 Patent No. 7475751 Patent No. 7549932

[0011] [Searched March 14, 2025], Internet <URL: https: / / iopscience.iop.org / article / 10.35848 / 1882-0786 / aced7c / pdf> [Searched March 14, 2025], Internet <URL: https: / / www.wavefront.co.jp / CAE / MOVPE-database / exp5.html>

[0012] However, in the microlight-emitting diode display using microlight-emitting diode chips described in Patent Document 1, and in the XR glasses using this microlight-emitting diode display, the wiring between the substrate on which a large number of microlight-emitting diode chips are mounted in a two-dimensional array and the drive circuit board is complicated because it is necessary to connect the tiny p-side and n-side electrodes of the microlight-emitting diode chips to the wiring on the drive circuit board. Therefore, there was room for improvement in this respect.

[0013] Therefore, the problem that this invention aims to solve is to provide a microlight-emitting diode substrate on which microlight-emitting diodes are arranged and an external circuit, such as a drive circuit board, that can be easily wired between the substrate and the external circuit, such as a drive circuit board; a high-performance microlight-emitting diode display using this microlight-emitting diode substrate; and high-performance XR glasses using this microlight-emitting diode display.

[0014] To solve the above problems, this invention provides a microlight-emitting diode array in which at least one red-emitting AlGaInN-based microlight-emitting diode, at least one green-emitting AlGaInN-based microlight-emitting diode, and at least one blue-emitting AlGaInN-based microlight-emitting diode are arranged on an n-type GaN layer per pixel, and a transparent insulating film is provided to cover the microlight-emitting diode array, wherein the red-emitting AlGaInN-based microlight-emitting diode, the green-emitting AlGaInN-based microlight-emitting diode, and the blue-emitting AlGaInN-based microlight-emitting diode each have an insulating film having at least one opening provided on the n-type GaN layer, a light-emitting layer provided on the n-type GaN layer in the portion of the opening of the insulating film, a p-type GaN layer provided on the light-emitting layer, a plurality of p-side electrodes provided separately from each other on the upper surface of the p-type GaN layer, and an n-side electrode provided on the n-type GaN layer in the portion where the light-emitting layer is not provided. The microlight-emitting diode substrate is provided on the transparent insulating film, with p-side electrode extraction electrodes electrically connected to each of the p-side electrodes through contact holes provided in the transparent insulating film, a first p-side wiring, a second p-side wiring, and a third p-side wiring are provided on the transparent insulating film along the plurality of p-side electrodes of the red light-emitting AlGaInN-based microlight-emitting diode, the green light-emitting AlGaInN-based microlight-emitting diode, and the blue light-emitting AlGaInN-based microlight-emitting diode, respectively, with the first p-side wiring and each of the p-side electrode extraction electrodes of the red light-emitting AlGaInN-based microlight-emitting diode, the second p-side wiring and each of the p-side electrode extraction electrodes of the green light-emitting AlGaInN-based microlight-emitting diode, and the third p-side wiring and each of the p-side electrode extraction electrodes of the blue light-emitting AlGaInN-based microlight-emitting diode, respectively, being electrically connected to each other via thin film fuses, and an n-side electrode extraction electrode electrically connected to the n-side electrode through contact holes provided in the transparent insulating film, being provided on the transparent insulating film.

[0015] Red-emitting AlGaInN-based microlight-emitting diodes, green-emitting AlGaInN-based microlight-emitting diodes, and blue-emitting AlGaInN-based microlight-emitting diodes typically have an InGaN-based light-emitting layer, but by controlling the growth conditions of the light-emitting layer, blue emission (e.g., wavelengths of 440 nm to 470 nm), green emission (e.g., wavelengths of 515 nm to 545 nm), and red emission (e.g., wavelengths of 605 nm to 655 nm) are all possible.

[0016] The structures of the red-emitting AlGaInN-based microlight-emitting diode, the green-emitting AlGaInN-based microlight-emitting diode, and the blue-emitting AlGaInN-based microlight-emitting diode are not particularly limited as long as the light-emitting layer has a structure sandwiched between an n-type GaN layer and a p-type GaN layer, and can be selected as needed.

[0017] The transparent insulating film can be any material that is transparent to visible light and is selected as needed, but from the viewpoint of ease of formation, polydimethylsiloxane (PDMS), a type of silicone, is used as an example.

[0018] The shape of the apertures in the insulating film provided on the n-type GaN layer can be selected as needed. These may be polygons similar to or analogous to the frustoconical GaN layer, or other shapes, such as circles. The arrangement of the apertures in the insulating film can also be selected as needed. The insulating film can be selected as needed, for example, an oxide film (SiO₂). 2 (Such as films), nitride films (Si 3 N 4 (films, etc.), oxynitride films (SiO2 films, etc.), titanium oxide films (TiO2 2 A membrane or similar object is used.

[0019] In a typical example, a red-emitting AlGaInN-based microlight-emitting diode, a green-emitting AlGaInN-based microlight-emitting diode, and a blue-emitting AlGaInN-based microlight-emitting diode have an insulating film having at least one opening provided on an n-type GaN layer, a frustoconical GaN layer provided on the n-type GaN layer in the portion of the insulating film with the opening, an emitting layer provided along the upper and side surfaces of the frustoconical GaN layer, a p-type GaN layer provided to cover the emitting layer, a plurality of p-side electrodes provided separately from each other on the upper surface of the p-type GaN layer, and at least one n-side electrode provided on the n-type GaN layer in the portion where the frustoconical GaN layer is not provided. Preferably, a portion of the n-type GaN layer is formed by lateral growth, and the opening of the insulating film is formed on the portion of the n-type GaN layer formed by that lateral growth. This significantly reduces the penetration dislocation density of the frustoconical GaN layer provided on the n-type GaN layer at the opening of the insulating film. This suppresses the decrease in luminescence efficiency due to non-luminescent recombination in the penetration dislocation portion propagating from the frustoconical GaN layer to the light-emitting layer, as well as the leakage current caused by the penetration dislocations. The shape of the frustoconical GaN layer can be various and is not particularly limited. Examples of frustoconical GaN layers include hexagonal frustoconicals, hexagonal frustoconicals or octagonal frustoconicals stretched in one direction, etc. This GaN layer may be undoped or n-type. For example, the thickness of the p-type GaN layer above the top surface of the frustoconical GaN layer may be selected to be smaller than the thickness of the p-type GaN layer above the side surface of the frustoconical GaN layer (thickness measured along a direction perpendicular to the top surface of the frustoconical GaN layer), so that light is mainly emitted from the light-emitting layer on the top surface of the frustoconical GaN layer. Conversely, the thickness of the p-type GaN layer above the side surface of the frustoconical GaN layer may be selected to be smaller than the thickness of the p-type GaN layer above the top surface of the frustoconical GaN layer, so that light is mainly emitted from the light-emitting layer on the side surface of the frustoconical GaN layer. When light from the light-emitting layer is extracted through this p-side electrode, at least a portion of it is made transparent, and the light from the light-emitting layer is extracted to the outside through this transparent portion.In contrast, when light from the light-emitting layer is mainly extracted to the outside from the n-side, the p-side electrode is made of a material containing a highly reflective metal layer such as Ag.

[0020] As red-emitting AlGaInN-based microlight-emitting diodes, green-emitting AlGaInN-based microlight-emitting diodes, and blue-emitting AlGaInN-based microlight-emitting diodes may be RGB three-color microLEDs formed on the same substrate by growing GaN-based nanorods (see, for example, Patent Documents 2 and 3), or RGB three-color microLEDs fabricated by stacking GaN-based semiconductor layers containing RGB three-color light-emitting layers and then processing them (see, for example, Non-Patent Document 1). For red-emitting AlGaInN-based microlight-emitting diodes, high-efficiency ones have been obtained using an InGaN-based light-emitting layer grown on flat C-plane GaN (see, for example, Non-Patent Document 2).

[0021] The n-type GaN layer is typically provided on a sapphire substrate. In a microlight-emitting diode substrate, typically, a pad wider than the wiring portion is provided at one end of each of the first p-side wiring, the second p-side wiring, and the third p-side wiring. By utilizing these pads, the electrical connection of external wiring to each of the first p-side wiring, the second p-side wiring, and the third p-side wiring can be facilitated.

[0022] Thin-film fuses that electrically connect the first p-side wiring to the p-side electrode extraction electrodes of the red-emitting AlGaInN-based micro-light-emitting diodes, the second p-side wiring to the p-side electrode extraction electrodes of the green-emitting AlGaInN-based micro-light-emitting diodes, and the third p-side wiring to the p-side electrode extraction electrodes of the blue-emitting AlGaInN-based micro-light-emitting diodes are selected in terms of material, width, thickness, and shape so that they can be melted and cut by applying a repair voltage and flowing a predetermined current between them. If too much current is required to cut the thin-film fuse, the Joule heating generated may cause thermal damage to the surrounding circuit. Considering the thermal impact on the surrounding circuit, it is desirable that the thin-film fuse be cut with a current of several hundred μA to several mA. As a condition for this, the minimum cross-sectional area (width × thickness) of the thin-film fuse is 0.5 μm. 2 The following is preferable, but not limited to: Thin-film fuses are typically made of a metal having a melting point of 350°C or less, and typically a melting point of 150°C or more. Examples of such metals include, but are not limited to, elemental metals such as In and Sn, and alloys (eutectic alloys) such as InSn, InSnAg, AgSn, and AgSn.

[0023] Furthermore, this invention comprises a microlight-emitting diode substrate and a drive circuit substrate on which a plurality of drive circuits that can be independently controlled and driven are arranged in a two-dimensional array, wherein the microlight-emitting diode substrate comprises a microlight-emitting diode array on which at least one red-emitting AlGaInN-based microlight-emitting diode, at least one green-emitting AlGaInN-based microlight-emitting diode and at least one blue-emitting AlGaInN-based microlight-emitting diode are arranged per pixel on an n-type GaN layer, and a transparent insulating film is provided to cover the microlight-emitting diode array. The red-emitting AlGaInN-based microlight-emitting diode, the green-emitting AlGaInN-based microlight-emitting diode, and the blue-emitting AlGaInN-based microlight-emitting diode each have an insulating film having at least one opening provided on the n-type GaN layer, a light-emitting layer provided on the n-type GaN layer in the portion of the opening in the insulating film, a p-type GaN layer provided on the light-emitting layer, a plurality of p-side electrodes provided separately from each other on the upper surface of the p-type GaN layer, and an n-side electrode provided on the n-type GaN layer in the portion where the light-emitting layer is not provided, and p-side electrode extraction electrodes electrically connected to each of the p-side electrodes are provided on the transparent insulating film, and a first p-side wiring, a second p-side wiring, and a third p-side wiring are provided on the transparent insulating film along the plurality of p-side electrodes of each of the red-emitting AlGaInN-based microlight-emitting diode, the green-emitting AlGaInN-based microlight-emitting diode, and the blue-emitting AlGaInN-based microlight-emitting diode. The first p-side wiring and the respective p-side electrode extraction electrodes of the red light-emitting AlGaInN-based microlight-emitting diodes, the second p-side wiring and the respective p-side electrode extraction electrodes of the green light-emitting AlGaInN-based microlight-emitting diodes, and the third p-side wiring and the respective p-side electrode extraction electrodes of the blue light-emitting AlGaInN-based microlight-emitting diodes are each electrically connected to each other via thin-film fuses.Extraction electrodes for the n-side electrodes are provided on the transparent insulating film, electrically connected to each of the n-side electrodes through contact holes provided in the transparent insulating film, the drive circuit board includes a first drive circuit, a second drive circuit, and a third drive circuit for driving the red light-emitting AlGaInN-based microlight-emitting diode, the green light-emitting AlGaInN-based microlight-emitting diode, and the blue light-emitting AlGaInN-based microlight-emitting diode, which constitute one pixel of the microlight-emitting diode substrate, respectively, a first extraction electrode connected to the terminal of the first drive circuit that is electrically connected to the first p-side wiring of the red light-emitting AlGaInN-based microlight-emitting diode, a second extraction electrode connected to the terminal of the second drive circuit that is electrically connected to the second p-side wiring of the green light-emitting AlGaInN-based microlight-emitting diode, and a third extraction electrode connected to the terminal of the third drive circuit that is electrically connected to the third p-side wiring of the blue light-emitting AlGaInN-based microlight-emitting diode, The microlight-emitting diode display comprises: a wiring for setting the potential of the n-side electrode of the red-emitting AlGaInN-based microlight-emitting diode, the green-emitting AlGaInN-based microlight-emitting diode, and the blue-emitting AlGaInN-based microlight-emitting diode; and a fourth extraction electrode electrically connected to the wiring, wherein the first extraction electrode, the second extraction electrode, the third extraction electrode, and the fourth extraction electrode are electrically connected to the first p-side wiring, the second p-side wiring, the third p-side wiring, and the extraction electrode for the n-side electrode, respectively.

[0024] In this microlight-emitting diode display, the microlight-emitting diode substrate and the driver circuit board may be superimposed on each other, or they may be connected to each other via a flexible printed circuit or the like. In a typical example, the microlight-emitting diode substrate and the driver circuit board are superimposed so that the first extraction electrode, second extraction electrode, third extraction electrode, and fourth extraction electrode and the first p-side wiring, second p-side wiring, third p-side wiring, and n-side electrode extraction electrode face each other, and the first extraction electrode, second extraction electrode, third extraction electrode, and fourth extraction electrode are electrically connected to the first p-side wiring, second p-side wiring, third p-side wiring, and n-side electrode extraction electrode, respectively. The electrical connection between the first extraction electrode, second extraction electrode, third extraction electrode, and fourth extraction electrode and the first p-side wiring, second p-side wiring, third p-side wiring, and n-side electrode extraction electrode can be made using, for example, solder. In a typical example, the drive circuit board comprises a substrate, a drive circuit section provided on the substrate, and an insulating film provided on the drive circuit section. The first, second, third, and fourth extraction electrodes are provided in the first, second, third, and fourth contact holes provided in the insulating film, respectively. In this structure, even if the number of p-electrodes on the microlight-emitting diode substrate increases due to the division of the p-side electrode of each microlight-emitting diode, connection to the drive circuit board can be made with the minimum number of wires or contacts, thereby reducing the risk of failure during connection.

[0025] This micro light-emitting diode display can emit light in three colors: red (R), green (G), and blue (B), and can therefore be used as a color display. This micro light-emitting diode display may use any of the following methods: passive matrix drive, active matrix drive, or pulse width modulation (PWM) drive. In the case of a PWM-driven color display, for example, a drive circuit board having a PWM drive circuit may be used.

[0026] In this invention of a microlight-emitting diode display, the matters described above in relation to the invention of the microlight-emitting diode substrate apply, unless otherwise stated, in particular, as they do not contradict its properties.

[0027] Furthermore, this invention has a display, the display having a display section using a microlight-emitting diode substrate, a drive circuit board having a plurality of drive circuits that can be independently controlled and driven arranged in a two-dimensional array, and a flexible printed circuit that wires the display section and the drive circuit board, the microlight-emitting diode substrate having a microlight-emitting diode array in which at least one red-emitting AlGaInN-based microlight-emitting diode, at least one green-emitting AlGaInN-based microlight-emitting diode and at least one blue-emitting AlGaInN-based microlight-emitting diode are arranged on an n-type GaN layer per pixel, and a transparent insulating film provided to cover the microlight-emitting diode array. The red-emitting AlGaInN-based microlight-emitting diode, the green-emitting AlGaInN-based microlight-emitting diode, and the blue-emitting AlGaInN-based microlight-emitting diode each have an insulating film having at least one opening provided on the n-type GaN layer, a light-emitting layer provided on the n-type GaN layer in the portion of the opening in the insulating film, a p-type GaN layer provided on the light-emitting layer, a plurality of p-side electrodes provided separately from each other on the upper surface of the p-type GaN layer, and an n-side electrode provided on the n-type GaN layer in the portion where the light-emitting layer is not provided, and p-side electrode extraction electrodes electrically connected to each of the p-side electrodes are provided on the transparent insulating film, and a first p-side wiring, a second p-side wiring, and a third p-side wiring are provided on the transparent insulating film along the plurality of p-side electrodes of each of the red-emitting AlGaInN-based microlight-emitting diode, the green-emitting AlGaInN-based microlight-emitting diode, and the blue-emitting AlGaInN-based microlight-emitting diode.The first p-side wiring and the respective p-side electrode extraction electrodes of the red light-emitting AlGaInN-based microlight-emitting diodes, the second p-side wiring and the respective p-side electrode extraction electrodes of the green light-emitting AlGaInN-based microlight-emitting diodes, and the third p-side wiring and the respective p-side electrode extraction electrodes of the blue light-emitting AlGaInN-based microlight-emitting diodes are electrically connected to each other via thin film fuses, and the n-side electrode extraction electrodes, electrically connected to the n-side electrodes through contact holes provided in the transparent insulating film, are provided on the transparent insulating film, and the drive circuit board includes a first drive circuit, a second drive circuit, and a third drive circuit for driving the red light-emitting AlGaInN-based microlight-emitting diode, the green light-emitting AlGaInN-based microlight-emitting diode, and the blue light-emitting AlGaInN-based microlight-emitting diode, which constitute one pixel of the microlight-emitting diode substrate, respectively. The first drive circuit has a first extraction electrode connected to a terminal electrically connected to the first p-side wiring of the red light-emitting AlGaInN microlight-emitting diode, the second drive circuit has a second extraction electrode connected to a terminal electrically connected to the second p-side wiring of the green light-emitting AlGaInN microlight-emitting diode, and the third drive circuit has a third extraction electrode connected to a terminal electrically connected to the third p-side wiring of the blue light-emitting AlGaInN microlight-emitting diode, the wiring for setting the potential of the n-side electrodes of the red light-emitting AlGaInN microlight-emitting diode, the green light-emitting AlGaInN microlight-emitting diode, and the blue light-emitting AlGaInN microlight-emitting diode, and a fourth extraction electrode electrically connected to the wiring. The XR glass is such that the first extraction electrode, the second extraction electrode, the third extraction electrode, and the fourth extraction electrode are electrically connected to the first p-side wiring, the second p-side wiring, the third p-side wiring, and the extraction electrode for the n-side electrode, respectively.

[0028] In these XR glasses, the mounting locations for the display unit, drive circuit board, and flexible printed circuit board are selected as needed and are not particularly limited. For example, the display unit may be mounted on the inner surface of the windshield, the drive circuit board on the ear hook portion of the frame, and the flexible printed circuit board on the frame. XR (Cross Reality) glasses are a general term for glasses that use technologies such as VR (Virtual Reality), AR (Augmented Reality), MR (Mixed Reality), and SR (Substitutional Reality), technologies that combine these (for example, technologies that fuse VR and AR), and technologies that are intermediate between these technologies (for example, technologies positioned between AR and MR). They are image display devices that create a space that provides a simulated experience by fusing the real and virtual worlds. VR is a technology that allows you to experience a virtual world as if it were the real world; AR is a technology that overlays a virtual world onto real space; MR is a technology that merges real and virtual spaces; and SR is a technology that overlays past footage onto real space, making past events appear as if they are happening right now.

[0029] In the invention of these XR glasses, matters other than those mentioned above are governed by the provisions described above in relation to the invention of the micro light-emitting diode substrate and the invention of the micro light-emitting diode display, unless they contradict the nature of the device.

[0030] Furthermore, this invention comprises a microlight-emitting diode array in which at least one first AlGaInN-based microlight-emitting diode, a second AlGaInN-based microlight-emitting diode, and a third AlGaInN-based microlight-emitting diode are arranged on an n-type GaN layer, each having an emission wavelength of 390 nm or more and 470 nm or less per pixel, and a transparent insulating film provided to cover the microlight-emitting diode array, wherein the first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode each comprises an insulating film having at least one opening provided on the n-type GaN layer, an emission-emitting layer provided on the n-type GaN layer in the portion of the insulating film with the opening, a p-type GaN layer provided on the emission-emitting layer, a plurality of p-side electrodes provided separately from each other on the upper surface of the p-type GaN layer, and an n-side electrode provided on the n-type GaN layer in the portion where the emission-emitting layer is not provided. A p-side electrode extraction electrode is provided on the transparent insulating film, electrically connected to each of the p-side electrodes through contact holes provided in the transparent insulating film. A first p-side wiring, a second p-side wiring, and a third p-side wiring are provided on the transparent insulating film along the plurality of p-side electrodes of the first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode. The first p-side wiring is electrically connected to each of the p-side electrode extraction electrodes of the first AlGaInN-based microlight-emitting diode, the second p-side wiring is connected to each of the p-side electrode extraction electrodes of the second AlGaInN-based microlight-emitting diode, and the third p-side wiring is electrically connected to each of the p-side electrode extraction electrodes of the third AlGaInN-based microlight-emitting diode via a thin-film fuse. This microlight-emitting diode substrate has an n-side electrode extraction electrode provided on the transparent insulating film, which is electrically connected to the n-side electrode through a contact hole provided in the transparent insulating film.

[0031] The first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode typically have an InGaN-based light-emitting layer. The structure of the first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode is not particularly limited as long as the light-emitting layer has a structure sandwiched between an n-type GaN layer and a p-type GaN layer, and can be selected as needed.

[0032] When this microlight-emitting diode substrate is used in a color microlight-emitting diode display, a wavelength conversion layer is provided on the back surface of the n-type GaN layer for extracting red light, green light, and blue light from the first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode, respectively, or for extracting red light and green light from any two of the first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode, respectively.

[0033] In this invention of the micro light-emitting diode substrate, the matters described above in relation to the invention of the micro light-emitting diode substrate shall apply, unless otherwise stated, in particular, in relation to its properties.

[0034] Furthermore, this invention comprises a microlight-emitting diode substrate and a drive circuit substrate on which a plurality of drive circuits that can be independently controlled and driven are arranged in a two-dimensional array, wherein the microlight-emitting diode substrate comprises a microlight-emitting diode array on an n-type GaN layer in which at least one AlGaInN-based microlight-emitting diode, a second AlGaInN-based microlight-emitting diode, and a third AlGaInN-based microlight-emitting diode are arranged per pixel, each having an emission wavelength of 390 nm or more and 470 nm or less, and a transparent insulating film provided to cover the microlight-emitting diode array. The first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode each have an insulating film having at least one opening provided on the n-type GaN layer, a light-emitting layer provided on the n-type GaN layer in the portion of the opening in the insulating film, a p-type GaN layer provided on the light-emitting layer, a plurality of p-side electrodes provided separately from each other on the upper surface of the p-type GaN layer, and an n-side electrode provided on the n-type GaN layer in the portion where the light-emitting layer is not provided, and p-side electrode extraction electrodes electrically connected to each of the p-side electrodes are provided on the transparent insulating film, and a first p-side wiring, a second p-side wiring, and a third p-side wiring are provided on the transparent insulating film along the plurality of p-side electrodes of the first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode, respectively. The first p-side wiring and the respective p-side electrode extraction electrodes of the first AlGaInN-based microlight-emitting diodes, the second p-side wiring and the respective p-side electrode extraction electrodes of the second AlGaInN-based microlight-emitting diodes, and the third p-side wiring and the respective p-side electrode extraction electrodes of the third AlGaInN-based microlight-emitting diodes are each electrically connected to each other via thin-film fuses, and the n-side electrode extraction electrodes, which are electrically connected to the n-side electrodes through contact holes provided in the transparent insulating film, are provided on the transparent insulating film.The above-mentioned drive circuit board includes a first drive circuit, a second drive circuit, and a third drive circuit for driving the first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode, which constitute one pixel of the above-mentioned microlight-emitting diode board, respectively; a first extraction electrode connected to the terminal of the first AlGaInN-based microlight-emitting diode that is electrically connected to the first p-side wiring of the first AlGaInN-based microlight-emitting diode of the first drive circuit; a second extraction electrode connected to the terminal of the second AlGaInN-based microlight-emitting diode that is electrically connected to the second p-side wiring of the second AlGaInN-based microlight-emitting diode of the second drive circuit; and a third extraction electrode connected to the terminal of the third AlGaInN-based microlight-emitting diode that is electrically connected to the third p-side wiring of the third AlGaInN-based microlight-emitting diode of the third drive circuit. The first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode have wiring for setting the potential of the n-side electrode, and a fourth extraction electrode is electrically connected to the wiring, wherein the first extraction electrode, the second extraction electrode, the third extraction electrode, and the fourth extraction electrode are electrically connected to the first p-side wiring, the second p-side wiring, the third p-side wiring, and the extraction electrode for the n-side electrode, respectively. This is a microlight-emitting diode display in which a wavelength conversion layer for extracting red light, green light, and blue light from the first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode, respectively, or a wavelength conversion layer for extracting red light and green light from any two of the first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode, respectively, is provided on the back surface of the n-type GaN layer.

[0035] In this microlight-emitting diode display, when a wavelength conversion layer is provided on the back surface of the n-type GaN layer for extracting red light, green light, and blue light from a first AlGaInN-based microlight-emitting diode, a second AlGaInN-based microlight-emitting diode, and a third AlGaInN-based microlight-emitting diode, respectively, this wavelength conversion layer typically consists of red phosphors, green phosphors, and blue phosphors provided on the back surface of the n-type GaN layer corresponding to the first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode, respectively, and filters provided on these red, green, and blue phosphors that transmit red light, green light, and blue light, respectively. Furthermore, when a wavelength conversion layer is provided on the back surface of the n-type GaN layer for extracting red light and green light from any two of the first AlGaInN-based microlight-emitting diodes, the second AlGaInN-based microlight-emitting diodes, and the third AlGaInN-based microlight-emitting diodes, respectively, this wavelength conversion layer is typically composed of a red phosphor and a green phosphor provided on the back surface of the n-type GaN layer, corresponding to each of the two of the first AlGaInN-based microlight-emitting diodes, the second AlGaInN-based microlight-emitting diodes, and the third AlGaInN-based microlight-emitting diodes, and a filter provided on these red and green phosphors that transmits red light and green light, respectively.

[0036] In this invention of the microlight-emitting diode display, matters other than those described above are governed by the provisions described above in relation to the invention of the microlight-emitting diode substrate and the invention of the microlight-emitting diode display, unless they contradict the properties of the microlight-emitting diode.

[0037] Furthermore, this invention has a display, the display having a display section using a microlight-emitting diode substrate, a drive circuit board having a plurality of drive circuits that can be independently controlled and driven arranged in a two-dimensional array, and a flexible printed circuit for wiring the display section and the drive circuit board, the microlight-emitting diode substrate having a microlight-emitting diode array in which at least one AlGaInN-based microlight-emitting diode, a second AlGaInN-based microlight-emitting diode, and a third AlGaInN-based microlight-emitting diode are arranged on an n-type GaN layer, with each pixel having an emission wavelength of 390 nm or more and 470 nm or less, and a transparent insulating film provided to cover the microlight-emitting diode array. The first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode each have an insulating film having at least one opening provided on the n-type GaN layer, a light-emitting layer provided on the n-type GaN layer in the portion of the opening in the insulating film, a p-type GaN layer provided on the light-emitting layer, a plurality of p-side electrodes provided separately from each other on the upper surface of the p-type GaN layer, and an n-side electrode provided on the n-type GaN layer in the portion where the light-emitting layer is not provided, and p-side electrode extraction electrodes electrically connected to each of the p-side electrodes are provided on the transparent insulating film, and a first p-side wiring, a second p-side wiring, and a third p-side wiring are provided on the transparent insulating film along the plurality of p-side electrodes of the first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode, respectively. The first p-side wiring and the respective p-side electrode extraction electrodes of the first AlGaInN-based microlight-emitting diodes, the second p-side wiring and the respective p-side electrode extraction electrodes of the second AlGaInN-based microlight-emitting diodes, and the third p-side wiring and the respective p-side electrode extraction electrodes of the third AlGaInN-based microlight-emitting diodes are each electrically connected to each other via thin-film fuses.An extraction electrode for the n-side electrode, electrically connected to the n-side electrode through a contact hole provided in the transparent insulating film, is provided on the transparent insulating film, the drive circuit board comprises a first drive circuit, a second drive circuit, and a third drive circuit for driving the first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode, which constitute one pixel of the microlight-emitting diode substrate, respectively, a first extraction electrode connected to the terminal of the first AlGaInN-based microlight-emitting diode electrically connected to the first p-side wiring, a second extraction electrode connected to the terminal of the second AlGaInN-based microlight-emitting diode electrically connected to the second p-side wiring, and a third extraction electrode connected to the terminal of the third AlGaInN-based microlight-emitting diode electrically connected to the third p-side wiring, The first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode have wiring for setting the potential of the n-side electrode, and a fourth extraction electrode is electrically connected to the wiring, wherein the first extraction electrode, the second extraction electrode, the third extraction electrode, and the fourth extraction electrode are electrically connected to the first p-side wiring, the second p-side wiring, the third p-side wiring, and the extraction electrode for the n-side electrode, respectively. The XR glasses are provided on the back surface of the n-type GaN layer with a wavelength conversion layer for extracting red light, green light, and blue light from the first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode, respectively, or a wavelength conversion layer for extracting red light and green light from any two of the first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode, respectively.

[0038] In this invention of XR glasses, the matters described above in relation to the invention of the micro light-emitting diode substrate, the invention of the micro light-emitting diode display, and the invention of XR glasses are valid, insofar as they do not contradict the nature of the XR glasses.

[0039] According to this invention, the microlight-emitting diode substrate has a first p-side wiring, a second p-side wiring, a third p-side wiring, and an n-side electrode extraction electrode provided on a transparent insulating film that covers a red-emitting AlGaInN-based microlight-emitting diode, a green-emitting AlGaInN-based microlight-emitting diode, and a blue-emitting AlGaInN-based microlight-emitting diode or a first AlGaInN-based microlight-emitting diode, a second AlGaInN-based microlight-emitting diode, and a third AlGaInN-based microlight-emitting diode, so as to be covered by these, and these can be used to easily connect to an external circuit, such as a drive circuit board.

[0040] Furthermore, this micro-light-emitting diode substrate can be used to realize a high-performance micro-LED display, and this micro-LED display can be used to realize high-performance XR glasses.

[0041] This is a cross-sectional view showing a micro-LED substrate according to the first embodiment of this invention. This is a plan view showing a micro-LED substrate according to the first embodiment of this invention. This is a cross-sectional view illustrating an example of a method for manufacturing a micro-LED substrate according to the first embodiment of this invention. This is a plan view illustrating an example of a method for manufacturing This is a plan view illustrating an example of a method for manufacturing a microLED substrate according to the first embodiment of this invention. This is a cross-sectional view illustrating an example of a method for manufacturing a microLED substrate according to the first embodiment of this invention. This is a plan view illustrating an example of a method for manufacturing a microLED substrate according to the first embodiment of this invention. This is a cross-sectional view showing a drive circuit board constituting a microLED display according to the second embodiment of this invention. This is a plan view showing a drive circuit board constituting a microLED display according to the second embodiment of this invention. This is a cross-sectional view showing a portion of one pixel of a microLED display according to the second embodiment of this invention.This is a plan view showing a portion of one pixel of a microLED display according to a second embodiment of the present invention. This is a cross-sectional view showing a microLED display according to a second embodiment of the present invention. This is a plan view showing a microLED display according to a second embodiment of the present invention. This is a cross-sectional view showing a microLED substrate according to a third embodiment of the present invention. This is a cross-sectional view showing a microLED display according to a fourth embodiment of the present invention before a color filter or the like is provided. This is a cross-sectional view showing a microLED display according to a fourth embodiment of the present invention. This is a perspective view showing XR glasses according to a fifth embodiment of the present invention.

[0042] The following describes embodiments for carrying out the invention.

[0043] <First Embodiment> [Micro LED Substrate] Figures 1A and 1B show a micro LED substrate 100 according to the first embodiment, where Figure 1A is a cross-sectional view and Figure 1B is a plan view, and Figure 1A is a cross-sectional view along A-A in Figure 1B. Pixels are arranged in a two-dimensional array on this micro LED substrate 100, but Figures 1A and 1B show a portion of one pixel. As shown in Figures 1A and 1B, in this micro LED substrate 100, a stripe-shaped n-type GaN layer 11 is provided on a sapphire substrate 10 with a C-plane orientation, extending in the direction of pixel arrangement. Note that the sapphire substrate 10 is optional. Red-emitting AlGaInN-based micro LEDs 30, green-emitting AlGaInN-based LEDs 40, and blue-emitting AlGaInN-based LEDs 50 are provided adjacent to each other in this order on the n-type GaN layer 11. These red-emitting AlGaInN-based micro-LEDs 30, green-emitting AlGaInN-based LEDs 40, and blue-emitting AlGaInN-based LEDs 50 have the same structure as each other except for the light-emitting layer. The n-type GaN layer 11 is generally grown on a sapphire substrate via a low-temperature buffer layer, but usually has a very large number of through-transitions (10 8 ~10 10 pieces / cm 2 It has a degree of luminescence. Penetrating dislocations can cause a decrease in luminescence efficiency and electrical leakage. Therefore, preferably it is grown laterally by the conventionally known ELO (Epitaxial Lateral Overgrowth) method and has a partially low penetrating dislocation density region (not shown). The region of the n-type GaN layer 11 corresponding to the seed (seed crystal) when growing laterally and the region where layers grown laterally from adjacent seeds meet (meeting region) are in a high dislocation density region (10 8 ~10 10 pieces / cm 2 (to a certain extent), and the lateral growth region between the two regions is a low dislocation density region (10 6 ~10 7 pieces / cm 2 (To the extent)

[0044] An insulating film 12 is provided on the n-type GaN layer 11. As already mentioned, the insulating film 12 is SiO 2 This is a film, etc. The thickness of the insulating film 12 is selected as needed, but is for example 10 to 30 nm. The insulating film 12 has three elongated rectangular openings 12a having the same planar shape as each other, arranged parallel to each other and at equal intervals on the low dislocation density region of the n-type GaN layer 11. The size of the openings 12a is selected as needed, but is for example (100 to 2000 nm) × (1 to 10 μm). On the n-type GaN layer 11 in the portion of each opening 12a, an island-like GaN layer 13 is provided that is elongated in the longitudinal direction of the opening 12a and extends on the insulating film 12, separated from each other. In this case, this GaN layer 13 has an octagonal truncated pyramidal shape that extends in the longitudinal direction of the opening 12a. This GaN layer 13 may be undoped or n-type. In Figures 1A and 1B, a red light-emitting layer 14 is provided in an island-like manner along the top and side (slope) surfaces of the GaN layer 13 at the leftmost opening 12a, a green light-emitting layer 15 is provided in an island-like manner along the top and side (slope) surfaces of the GaN layer 13 at the central opening 12a, and a blue light-emitting layer 16 is provided in an island-like manner along the top and side (slope) surfaces of the GaN layer 13 at the rightmost opening 12a. P-type GaN layers 17 are provided separately from each other so as to cover each of the light-emitting layers 14, 15, and 16. By appropriately selecting conditions such as temperature, growth rate, and pressure during the crystal growth of the p-type GaN layer 17, the growth of the p-type GaN layer 17 in the lateral (horizontal) direction relative to the vertical (perpendicular) direction is promoted, and part or all of the p-type GaN layer 17 above the top surface and above the side (slope) surfaces of the GaN layer 13 is flattened. Therefore, the thickness of the p-type GaN layer 17 above the upper surface of the GaN layer 13 is smaller than the thickness of the p-type GaN layer 17 above the side surface (slope) of the GaN layer 13. Note that p-type AlGaN layers are often inserted between the light-emitting layers 14, 15, and 16 and the p-type GaN layer 17, but their illustration and explanation are omitted.

[0045] The light-emitting layers 14, 15, and 16 are, for example, made of In as a barrier layer. x Ga 1-x N layer and In as a well layer y Ga 1-y In layers are stacked alternately with N layers. x Ga 1-x N / In y Ga 1-y It has an N multiple quantum well (MQW) structure (x < y, 0 ≤ x < 1, 0 ≤ y < 1). The light-emitting layer 14 is composed of In x Ga 1-x N / In y Ga 1-y The In composition ratios x and y of the N MQW structure are selected according to the emission wavelength of red light, and the In that constitute the light-emitting layer 15 x Ga 1-x N / In y Ga 1-y The In composition ratios x and y of the N MQW structure are selected according to the emission wavelength of green light, and the In that constitute the light-emitting layer 16 x Ga 1-x N / In y Ga 1-y The In composition ratios x and y of the N MQW structure are selected according to the emission wavelength of blue light. These In composition ratios x and y are In x Ga 1-x N layer and In y Ga 1-y The In composition also varies depending on the growth conditions of the N layer. The In composition of the luminescent layers 14, 15, and 16, which are formed in an octagonal truncated pyramidal shape following the octagonal truncated pyramidal GaN layer 13, is greater in the portion on the upper surface of the GaN layer 13 than in the portion on the side surface of the GaN layer 13. This is because, compared to InGaN growth on the polar C-plane, InGaN growth on non-polar and semi-polar surfaces results in a lower In composition at the same temperature. Therefore, the band gap of the portion of the luminescent layers 14, 15, and 16 on the side surface of the GaN layer 13 is larger than the band gap of the portion on the upper surface of the GaN layer 13.

[0046] An insulating film 18 is provided so as to cover each p-type GaN layer 17. Multiple (four in this example) circular openings 18a are provided in a row and at equal intervals on the longitudinal centerline of each p-type GaN layer 17 in the insulating film 18. The diameter of the openings 18a is selected as needed, but is typically about the width of the opening 12a (100 to 2000 nm). Multiple (four in this example) p-side electrodes 19 are provided on the p-type GaN layer 17 through each opening 18a, on the longitudinal centerline, in a row separated from each other at positions corresponding to each light-emitting layer 14, 15, and 16. The p-side electrode 19 is configured to increase the reflectivity of light when light is extracted from the n-type GaN layer 11 side in each of the red-emitting AlGaInN-based micro-LEDs 30, green-emitting AlGaInN-based LED 40, and blue-emitting AlGaInN-based LED 50, and is composed of a multilayer film such as an ITO / Ag / Ti / Au film. However, when light is extracted from the opposite side of the n-type GaN layer 11 through the p-side electrode 19, it is composed of a transparent material such as an ITO film. In the ITO / Ag / Ti / Au film, the thicknesses of the ITO film, Ag film, Ti film, and Au film are, for example, 50 nm, 100 nm, 20 nm, and 50 nm, respectively.

[0047] The red-emitting AlGaInN-based micro-LED 30, the green-emitting AlGaInN-based LED 40, and the blue-emitting AlGaInN-based LED 50 are positioned to one side of the n-type GaN layer 11. As a result, the insulating film 12 is not provided on the other side of the n-type GaN layer 11 where a space has been created, and the n-type GaN layer 11 is exposed. The n-side electrode 20 is provided on this exposed n-type GaN layer 11 parallel to the arrangement direction of the red-emitting AlGaInN-based micro-LED 30, the green-emitting AlGaInN-based LED 40, and the blue-emitting AlGaInN-based LED 50. The n-side electrode 20 is made of a laminated or multi-layered film such as an Al / Au film or a Ti / Al / Ti / Ni / Au film.

[0048] A transparent insulating film 21 is provided over the entire surface of the red-emitting AlGaInN-based micro-LED 30, the green-emitting AlGaInN-based LED 40, and the blue-emitting AlGaInN-based LED 50. The transparent insulating film 21 is made of, for example, PDMS. Contact holes 21a are provided in the transparent insulating film 21 in the portions corresponding to the p-side electrodes 19 of the red-emitting AlGaInN-based micro-LED 30, the green-emitting AlGaInN-based LED 40, and the blue-emitting AlGaInN-based LED 50, and a p-side electrode extraction electrode 22 is provided in contact with the p-side electrode 19 through these contact holes 21a. The p-side electrode extraction electrode 22 is made of, for example, ITO, Al, Cu, etc. On the other hand, a contact hole 21b is provided in the transparent insulating film 21 in the portions corresponding to one of the positions of the n-side electrode 20 within one pixel (for example, one side of the green-emitting AlGaInN-based LED 40), and an n-side electrode extraction electrode 23 is provided in contact with the n-side electrode 20 through these contact holes 21b.

[0049] P-side wirings 24, 25, and 26 are provided on a transparent insulating film 21 along multiple p-side electrodes 19 of each of the red-emitting AlGaInN-based micro-LEDs 30, green-emitting AlGaInN-based micro-LEDs 40, and blue-emitting AlGaInN-based micro-LEDs 50. Circular pad portions 24a, 25a, and 26a are provided at one end of each of these p-side wirings 24, 25, and 26. These pad portions 24a, 25a, and 26a are provided on the transparent insulating film 21 in a region separate from the n-type GaN layer 11. The p-side wiring 24 and the respective p-side electrode extraction electrodes 22 of the red-emitting AlGaInN-based micro-LED 30 are connected to each other via a thin-film fuse 27. The p-side wiring 25 and the respective p-side electrode extraction electrodes 22 of the green-emitting AlGaInN-based micro-LED 40 are connected to each other via a thin-film fuse 27. The p-side wiring 26 and the respective p-side electrode extraction electrodes 22 of the blue-emitting AlGaInN-based micro-LED 50 are connected to each other via a thin-film fuse 27. When excessive current flows due to a leakage failure in the p-side electrode 19, the thin-film fuse 27 melts, thereby interrupting the electrical connection between the p-side electrode 19 and the p-side electrode extraction electrodes 22. The pad portions 24a, 25a, and 26a of the p-side wirings 24, 25, and 26 are provided on the transparent insulating film 21, but in Figure 1A, for convenience, they are shown as being on the thin-film fuse 27.

[0050] The n-type GaN layer 11, the light-emitting layers 14, 15, 16, and the p-type GaN layer 17 typically have a C-plane orientation. The resistivity of the n-type GaN layer 11 and the GaN layer 13 is, for example, about 0.01 Ωcm, but is not limited thereto. The resistivity of the light-emitting layers 14, 15, 16 is, for example, about 0.1 to 0.3 Ωcm, but is not limited thereto. The resistivity of the p-type GaN layer 17 is, for example, about 1 to 3 Ωcm, but is not limited thereto. The thickness of the n-type GaN layer 11 is, for example, 1 to 5 μm, the thickness of the GaN layer 13 is, for example, 100 to 1500 nm, the thickness of the light-emitting layers 14, 15, 16 is, for example, 30 to 100 nm, and the thickness of the upper part of the upper surface of the GaN layer 13 of the p-type GaN layer 17 is, for example, 100 to 200 nm, but is not limited thereto. The total thickness of the n-type GaN layer 11, GaN layer 13, light-emitting layers 14, 15, 16, and p-type GaN layer 17 is, for example, 1.2 to 6.8 μm, but is not limited to this.

[0051] [Operation of the Micro LED Substrate] In this micro LED substrate 100, red light emission can be produced by applying a forward bias between the p-side electrode 19 and the n-side electrode 20 of the red-emitting AlGaInN-based LED 30, green light emission can be produced by applying a forward bias between the p-side electrode 19 and the n-side electrode 20 of the green-emitting AlGaInN-based LED 40, and blue light emission can be produced by applying a forward bias between the p-side electrode 19 and the n-side electrode 20 of the blue-emitting AlGaInN-based LED 50, thereby obtaining full-color light emission. In this case, since the n-type GaN layer 11 and the p-type GaN layer 17 are separated by an insulating film 12 in parts other than the opening 12a, leakage current during operation can be effectively suppressed. Furthermore, since the thickness of the p-type GaN layer 17, which has high resistivity, is smaller in the upper part of the top surface of the GaN layer 13 than in the upper part of the side surface (slope) of the GaN layer 13, the current flowing between the p-side electrode 19 and the n-side electrode 20 mainly passes through the p-type GaN layer 17 in the upper part of the top surface of the GaN layer 13, which has lower resistance, and less current passes through the p-type GaN layer 17 in the upper part of the side surface of the GaN layer 13. Furthermore, the In composition ratios x and y of the MQW structure of the light-emitting layers 14, 15, and 16 are smaller in the upper part of the side surface of the GaN layer 13 than in the upper part of the upper surface of the GaN layer 13. Therefore, the band gap of the light-emitting layers 14, 15, and 16 is smaller in the upper part of the upper surface of the GaN layer 13 than in the upper part of the side surface of the GaN layer 13. However, carriers (electrons, holes) tend to accumulate in the light-emitting layers 14, 15, and 16 in the upper part of the upper surface of the GaN layer 13 where the band gap is smaller. Thus, when a current flows between the p-side electrode 19 and the n-side electrode 20, light emission occurs in the light-emitting layers 14, 15, and 16, and light is mainly emitted from the light-emitting layers 14, 15, and 16 in the upper part of the upper surface of the GaN layer 13. This light is then extracted to the outside through the p-side electrode 19 or the n-type GaN layer 11.

[0052] [Method for Manufacturing Micro LED Substrates] An example of a method for manufacturing a micro LED substrate 100 is described below. The method for forming the red-emitting AlGaInN-based LED 30, the green-emitting AlGaInN-based LED 40, and the blue-emitting AlGaInN-based LED 50 is the same as the method for manufacturing a micro LED chip described in Patent Document 1.

[0053] First, as shown in Figures 2A and 2B, a red-emitting AlGaInN-based LED 30 including an emitting layer 14, a green-emitting AlGaInN-based LED 40 including an emitting layer 15, and a blue-emitting AlGaInN-based LED 50 including an emitting layer 16 are formed in the same manner as in Patent Document 1. The main points of this formation method are as follows. That is, an n-type GaN layer 11 is grown on a C-plane oriented sapphire substrate 30, and SiO is grown on the n-type GaN layer 11. 2 After forming an insulating film 12 such as a film, the insulating film 12 is patterned to form an elongated rectangular opening 12a in the area where the blue light-emitting AlGaInN-based LED 50 will be formed. Next, a GaN layer 13 is grown in the shape of an octagonal truncated island in each opening 12a, and then In x Ga 1-x N / In y Ga 1-y An N-MQW structured light-emitting layer 16 is epitaxially grown. The growth of these GaN layers 13, light-emitting layer 16, and p-type GaN layer 17 is carried out continuously in a MOCVD furnace. Next, SiO is added to cover the p-type GaN layer 17. 2 After forming an insulating film (not shown), the insulating film 12 is patterned to form an elongated rectangular opening 12a in the area where the green light-emitting AlGaInN LED 40 will be formed. Next, a GaN layer 13 and In are applied to the n-type GaN layer 11 exposed in the newly formed opening 12a. x Ga 1-x N / In y Ga 1-y A light-emitting layer 15 having an N MQW structure and a p-type GaN layer 17 are grown sequentially. Next, SiO is grown to cover the p-type GaN layer 17. 2 After forming an insulating film (not shown), the insulating film 12 is patterned to form an elongated rectangular opening 12a in the area where the red light-emitting AlGaInN LED 30 will be formed. Next, a GaN layer 13 and In are applied to the n-type GaN layer 11 exposed in the newly formed opening 12a. x Ga 1-x N / In y Ga 1-y A light-emitting layer 14 having an N MQW structure and a p-type GaN layer 17 are grown sequentially. Subsequently, SiO is grown to cover the p-type GaN layer 17. 2 An insulating film (not shown), such as a film, is formed. Next, circular contact holes 18a are formed in the insulating film 18 on the upper portion of each of the red-emitting AlGaInN-based LED 30, green-emitting AlGaInN-based LED 40, and blue-emitting AlGaInN-based LED 50, and the p-type GaN layer 17 is exposed inside these contact holes 18a. Next, a p-side electrode 19 is formed that contacts the p-type GaN layer 17 through the contact holes 18a.

[0054] Next, as shown in Figures 3A and 3B, the insulating film 12 is patterned in a stripe pattern, leaving the portions for the red-emitting AlGaInN-based LED 30, green-emitting AlGaInN-based LED 40, and blue-emitting AlGaInN-based LED 50. Then, the n-type GaN layer 11 is etched away, leaving the stripe-shaped region along one edge of the insulating film 12 in the direction of the arrangement of the red-emitting AlGaInN-based LED 30, green-emitting AlGaInN-based LED 40, and blue-emitting AlGaInN-based LED 50, thereby exposing the sapphire substrate 10. The patterning of the insulating film 12 is performed, for example, by wet etching. The etching of the n-type GaN layer 11 is performed, for example, by reactive ion etching (RIE).

[0055] Next, as shown in Figures 4A and 4B, an n-side electrode 20 is formed on a striped n-type GaN layer 11 exposed along one edge of the insulating film 12, for example, by a vacuum deposition method.

[0056] Next, as shown in Figures 5A and 5B, a transparent insulating film 21 is formed over the entire surface so as to cover the red-emitting AlGaInN-based LED 30, the green-emitting AlGaInN-based LED 40, the blue-emitting AlGaInN-based LED 50, and so on.

[0057] Next, as shown in Figures 6A and 6B, contact holes 21a and 21b are formed by etching away the portions on the p-side electrode 19 and the n-side electrode 20 of the red-emitting AlGaInN-based LED 30, the green-emitting AlGaInN-based LED 40, and the blue-emitting AlGaInN-based LED 50, respectively.

[0058] Next, as shown in Figures 7A and 7B, a p-side electrode extraction electrode 22 is formed in the contact hole 21a formed on the p-side electrode 19 of each of the red-emitting AlGaInN-based LED 30, green-emitting AlGaInN-based LED 40, and blue-emitting AlGaInN-based LED 50.

[0059] Next, as shown in Figures 8A and 8B, p-side wirings 24, 25, and 26 are formed on the transparent insulating film 21, and an extraction electrode 23 for the n-side electrode is formed in the contact hole 21b.

[0060] Next, as shown in Figures 9A and 9B, a thin-film fuse 27 is formed to connect the p-side wiring 24 to the respective p-side electrode extraction electrodes 22 of the red-emitting AlGaInN-based micro-LED 30, the p-side wiring 25 to the respective p-side electrode extraction electrodes 22 of the green-emitting AlGaInN-based micro-LED 40, and the p-side wiring 26 to the respective p-side electrode extraction electrodes 22 of the blue-emitting AlGaInN-based micro-LED 50.

[0061] Based on the above, the target micro LED substrate 100 shown in Figures 1A and 1B is manufactured.

[0062] As described above, according to this first embodiment, p-side wiring 24, 25, 26 having pad portions 24a, 25a, 26a and n-side electrode extraction electrode 23 are provided on a transparent insulating film 21 that covers the red-emitting AlGaInN-based LED 30, green-emitting AlGaInN-based LED 40, and blue-emitting AlGaInN-based LED 50 of the micro-LED substrate 100. This allows for easy wiring between the micro-LED substrate 100 and an external circuit, such as a drive circuit board, using these pad portions 24a, 25a, 26a and n-side electrode extraction electrode 23. Furthermore, the current flowing between the p-side electrode 19 and the n-side electrode 20 is concentrated in the light-emitting layers 14, 15, and 16 on the upper surface of the GaN layer 13 due to the shape of the p-type GaN layer 17. This allows for maintaining a high electron-hole recombination probability in the light-emitting layers 14, 15, and 16 on the upper surface of the GaN layer 13, thereby achieving high luminous efficiency. Furthermore, this micro-LED substrate 100 can be manufactured easily and at low cost using conventionally known technologies. Using this high-performance micro-light-emitting LED substrate 100, a high-performance micro-LED display can be realized, and using this micro-LED display, high-performance XR glasses can be realized. Furthermore, in this micro-LED substrate 100, the p-side wiring 24 and the p-side electrode extraction electrodes 22 of the red-emitting AlGaInN-based micro-LED 30 are connected to each other via a thin-film fuse 27, the p-side wiring 25 and the p-side electrode extraction electrodes 22 of the green-emitting AlGaInN-based micro-LED 40 are connected to each other via a thin-film fuse 27, and the p-side wiring 26 and the p-side electrode extraction electrodes 22 of the blue-emitting AlGaInN-based micro-LED 50 are connected to each other via a thin-film fuse 27. Therefore, by applying a repair voltage between the p-side wirings 24, 25, and 26 and the p-side electrode extraction electrodes 22 to allow current to flow, if a defect such as leakage occurs in any part of the p-side electrode 19, the thin-film fuse 27 connected to it will melt, thereby interrupting the electrical connection between that p-side electrode 19 and the p-side wirings 24, 25, and 26.Therefore, the micro-LED board 100 can be easily repaired, and consequently, the yield rate of the micro-LED board 100 can be increased. The micro-LED board 100 is transparent as a whole.

[0063] <Second Embodiment> [Micro LED Display] The micro LED display according to the second embodiment is constructed by stacking the micro LED substrate 100 and the drive circuit board according to the first embodiment.

[0064] Figures 10A and 10B show the drive circuit board 200, specifically the drive circuit portion for one pixel. The drive circuit board 200 as a whole has the pixel drive circuits arranged in a two-dimensional matrix. As shown in Figures 10A and 10B, the drive circuit portion 220 is provided on a glass substrate 210 that is transparent to visible light, and an insulating film 230 is provided to cover this drive circuit portion 220. Because a glass substrate 210 is used, the drive circuit board 200 is see-through. The drive circuit portion 220 includes a drive circuit 221 for a red-emitting AlGaInN-based LED 30, a drive circuit 222 for a green-emitting AlGaInN-based LED 40, and a drive circuit 223 for a blue-emitting AlGaInN-based LED 50. The drive circuits 221, 222, and 223 are typically composed of CMOS circuits, particularly Si-CMOS ICs. These drive circuits 221, 222, and 223 constitute the drive circuit for one pixel. Each of the drive circuits 221, 222, and 223 is provided with power lines 240 and data lines 250 extending in the column direction, as well as scan lines 260 extending in the row direction. An active drive circuit is provided between each data line 250 and each light-emitting region of each pixel, and this active drive circuit allows for the selection of each light-emitting region of each pixel. The active drive circuit uses a transistor T 1 , T 2 and a capacitor C. Transistor T 1 , T 2 Generally, a transistor is composed of thin-film transistors using semiconductor thin films such as polycrystalline Si thin films, and a capacitor C is constructed by stacking a lower electrode, an insulating film, and an upper electrode. Transistor T 1 The source is connected to data line 250, and the drain is connected to transistor T 2 It is connected to the gate of transistor T, and the gate is connected to scan line 260. 2 The source is connected to the power line 240, and the drain is connected to one of the pad portions 24a, 25a, or 26a of the p-side wiring 24, 25, or 26 of the micro-LED board 100 when the drive circuit board 200 is superimposed on the micro-LED board 100. For this purpose, as shown in Figure 10A, contact holes 230a, 230b, and 230c are provided on the drive circuits 221, 222, and 223, respectively, and extraction electrodes 271, 272, and 273 are provided through these contact holes 230a, 230b, and 230c, respectively. Extraction electrode 271 is connected to transistor T of the drive circuit 221. 2 The drain is electrically connected to the output electrode 272, and the output electrode 272 is connected to the transistor T of the drive circuit 222. 2 The drain is electrically connected to the output electrode 273, and the output electrode 273 is connected to the transistor T of the drive circuit 223. 2 It is electrically connected to the drain of the transistor T. 1 It is connected between the drain and the power line 260. The light-emitting area of ​​each pixel is selected by selecting between the scan line 260 and the data line 250. On the other hand, the drive circuit section 220 is provided with a common wiring 280 parallel to the scan line 260. The common wiring 280 is used to determine the potential of the n-side electrode 22 of the red light-emitting AlGaInN-based LED 30, green light-emitting AlGaInN-based LED 40, and blue light-emitting AlGaInN-based LED 50 that constitute the micro LED substrate 100. A contact hole 230d is provided on the common wiring 280 in the insulating film 230, and an extraction electrode 274 is provided through this contact hole 230d.

[0065] Figures 11A and 11B show a microLED display according to a second embodiment, which is constructed by stacking a microLED substrate 100 and a driving circuit board 200. The extraction electrodes 271, 272, and 273 of the driving circuit board 200 and the pad portions 24a, 25a, and 26a of the p-side wiring 24, 25, and 26 of the microLED substrate 100 are electrically connected to each other via solder or the like (not shown), and the extraction electrode 274 of the driving circuit board 200 and the extraction electrode 23 for the n-side electrode of the microLED substrate 100 are electrically connected via solder or the like (not shown).

[0066] Figures 12A and 12B show regions containing multiple pixels in a microLED display.

[0067] According to this second embodiment, a high-performance see-through micro-LED display can be easily realized by superimposing a see-through micro-LED substrate 100 and a see-through drive circuit board 200, electrically connecting the extraction electrodes 271, 272, and 273 of the drive circuit board 200 to the pad portions 24a, 25a, and 26a of the p-side wiring 24, 25, and 26 of the micro-LED substrate 100, and electrically connecting the extraction electrode 274 of the drive circuit board 200 to the extraction electrode 23 for the n-side electrode of the micro-LED substrate 100.

[0068] <Third Embodiment> [Micro LED Substrate] Figure 13 is a cross-sectional view showing a micro LED substrate 100 according to the third embodiment. Figure 13 shows a portion of one pixel in the micro LED substrate 100. The plan view of this micro LED substrate 100 is the same as that of Figure 1B. As shown in Figure 13, this micro LED substrate 100 differs from the micro LED substrate 100 according to the first embodiment in that it does not have a sapphire substrate 10, that instead of red-emitting AlGaInN-based micro LED 30, green-emitting AlGaInN-based LED 40, and blue-emitting AlGaInN-based LED 50, it is provided with AlGaInN-based LEDs 60, 70, and 80 with emission wavelengths of 390 nm to 470 nm, and that the thickness of the n-type GaN layer 11 is thin, for example, 1 to 2 μm. Other than that, it is the same as the micro LED substrate 100 according to the first embodiment. The light-emitting layers 61, 71, and 81 of the AlGaInN-based LEDs 60, 70, and 80 are similar to the light-emitting layers 14 to 16, for example, In as a barrier layer. x Ga 1-x N layer and In as a well layer y Ga 1-y In layers are stacked alternately with N layers. x Ga 1-x N / In y Ga 1-y The micro-LED substrate 100 has an N-MQW structure (x < y, 0 ≤ x < 1, 0 ≤ y < 1). When RGB light is emitted from this micro-LED substrate 100, a red phosphor, a green phosphor, and a blue phosphor are provided above the AlGaInN-based LEDs 60, 70, and 80, respectively. Alternatively, if the emission wavelength of the light-emitting layers 61, 71, and 81 of the AlGaInN-based LEDs 60, 70, and 80 is in the blue light emission wavelength range (for example, 440 nm to 470 nm), a red phosphor and a green phosphor are provided above any two of the AlGaInN-based LEDs 60, 70, and 80, respectively.

[0069] [Method for Manufacturing a Micro LED Substrate] This micro LED substrate 100 can be manufactured as follows. That is, AlGaInN-based LEDs 60, 70, and 80 are formed by a method similar to the method for forming the blue light-emitting AlGaInN-based LED 50 in the manufacturing method of the micro LED substrate 100 according to the first embodiment. Next, in the same manner as the manufacturing method of the micro LED substrate 100 according to the first embodiment, steps such as forming a transparent insulating film 21, forming contact holes 21a, 21b, 21c, and 21d, forming a p-side electrode extraction electrode 22 and an n-side electrode extraction electrode 23, and forming a thin film fuse 27 are carried out. Next, the sapphire substrate 10 is separated from the n-type GaN layer 11 by a laser lift method or the like, and the n-type GaN layer 11 is further etched by a RIE method or the like to a thickness of, for example, 1 to 2 μm.

[0070] According to the third embodiment, the same advantages as the first embodiment can be obtained.

[0071] <Fourth Embodiment> [Micro LED Display] In the micro LED display according to the fourth embodiment, as shown in Figure 14, the micro LED substrate 100 according to the third embodiment and the driving circuit board 200 according to the second embodiment are superimposed. Then, as shown in Figure 15, an insulating film 300 is provided on the n-type GaN layer 11 of the micro LED substrate 100, and openings 301, 302, and 303 are provided in the insulating film 300 in the parts corresponding to the regions that emit red light, the regions that emit green light, and the regions that emit blue light, respectively, and these openings 301, 302, and 303 are filled with a red-emitting phosphor 310, a green-emitting phosphor 320, and a blue-emitting phosphor 330, respectively. A color filter layer 400 is provided on the insulating film 300, a filter 410 that transmits only red light is provided on the red-emitting phosphor 310, a filter 420 that transmits only green light is provided on the green-emitting phosphor 320, and a filter 430 that transmits only blue light is provided on the blue-emitting phosphor 330. The emission wavelengths of the AlGaInN-based LEDs 60, 70, and 80 are 390 nm to 470 nm, so red light, green light, and blue light can be obtained by exciting the phosphors 310, 320, and 330, respectively. A transparent substrate 500 is provided on the color filter layer 400. For example, a flexible film is used as the transparent substrate 500. Other aspects are the same as those of the microLED display according to the second embodiment.

[0072] According to the fourth embodiment, the same advantages as the second embodiment can be obtained.

[0073] <Fifth Embodiment> [XR Glasses] Figure 16 shows XR glasses according to the fifth embodiment. As shown in Figure 16, in these XR glasses, a see-through display unit 700 consisting of a see-through micro-LED display according to the first or third embodiment is attached to the inner surface of the portion of the windshield units 601 and 602 that faces the pupils of the user's eyes when the user wears these XR glasses. The material of the windshield units 601 and 602 is generally glass or plastic, but depending on the case, it may have a prescription as a lens for nearsightedness or farsightedness. Since the distance between the display unit 700 and the pupils of the user's eyes when the user wears these XR glasses is short, about 10-15 mm, a lens or a transparent column assembly (see, for example, Patent Documents 4 and 5) (not shown) for adjusting the focal length is attached between the pupil and the light-emitting surface of the display unit 700, and is adjusted so that each pixel is in focus without straining the eyes. The display unit 700 is connected to a drive circuit board 200 according to the second or fourth embodiment via a flexible printed circuit 800. The flexible printed circuit 800 and the drive circuit board 200 are mounted on a frame 603. The drive circuit board 200 is mounted on the ear-hook portion of the frame 603.

[0074] According to the fifth embodiment, the following advantages can be obtained. That is, since the display unit 700 for XR glasses is composed of a microLED substrate 100 in which red-emitting AlGaInN-based microLEDs 30, green-emitting AlGaInN-based microLEDs 40, and blue-emitting AlGaInN-based microLEDs 50 are arranged in a two-dimensional array per pixel, the area of ​​the microLED chip 10 per pixel of the display unit 700 can be made extremely small, and the aperture ratio of one pixel can be greatly increased. A pixel density of several thousand PPIs can also be achieved. Furthermore, in these XR glasses, the printed circuit board 500 on which the drive circuit board 550 is mounted and the display unit 300 are connected to each other by a flexible printed circuit 400, so the degree of freedom when manufacturing the array of the drive circuit 560 of the drive circuit board 550 is improved. As a result, high-performance XR glasses can be easily realized.

[0075] Although embodiments of this invention have been described in detail above, this invention is not limited to the embodiments described above, and various modifications based on the technical idea of ​​this invention are possible.

[0076] For example, the numerical values, configurations, shapes, materials, and methods mentioned in the above-described embodiments are merely examples, and different numerical values, configurations, shapes, materials, and methods may be used as needed.

[0077] For example, in the fourth embodiment, if the emission wavelength of the light-emitting layers 61, 71, and 81 of the AlGaInN-based LEDs 60, 70, and 80 is in the blue light emission wavelength range (for example, 440 nm to 470 nm), instead of filling the aperture 303 of the insulating film 300 with a blue light-emitting phosphor 330, a transparent material without wavelength conversion (for example, PDMS) may be filled.

[0078] 10 Sapphire substrate 11 n-type GaN layer 12 Insulating film 12a Aperture 13 GaN layer 14, 15, 16 Light-emitting layer 17 p-type GaN layer 18 Insulating film 18a Contact hole 19 p-side electrode 20 n-side electrode 21 Transparent insulating film 22 Lead electrode for p-side electrode 23 Lead electrode for n-side electrode 24, 25, 26 p-side wiring 24a, 25a, 26a Pad section 27 Thin film fuse 30 Red-emitting AlGaInN-based microLED 40 Green-emitting AlGaInN-based microLED 50 Blue-emitting AlGaInN-based microLED 60 AlGaInN-based microLED 100 MicroLED substrate 200 Drive circuit board 210 Glass substrate 220 Drive circuit section 230 Insulating film 230a, 230b, 230c Contact holes 271, 272, 273 Extraction electrodes

Claims

1. A microlight-emitting diode array having at least one red-emitting AlGaInN-based microlight-emitting diode, at least one green-emitting AlGaInN-based microlight-emitting diode, and at least one blue-emitting AlGaInN-based microlight-emitting diode arranged on an n-type GaN layer per pixel, and a transparent insulating film provided to cover the microlight-emitting diode array, wherein the red-emitting AlGaInN-based microlight-emitting diode, the green-emitting AlGaInN-based microlight-emitting diode, and the blue-emitting AlGaInN-based microlight-emitting diode each have an insulating film having at least one opening provided on the n-type GaN layer, an emitting layer provided on the n-type GaN layer in the portion of the opening of the insulating film, a p-type GaN layer provided on the emitting layer, a plurality of p-side electrodes provided separately from each other on the upper surface of the p-type GaN layer, and an n-side electrode provided on the n-type GaN layer in the portion where the emitting layer is not provided, and p-side electrode extraction electrodes electrically connected to each of the p-side electrodes through contact holes provided in the transparent insulating film are provided on the transparent insulating film. A microlight-emitting diode substrate is provided on the transparent insulating film, with a first p-side wiring, a second p-side wiring, and a third p-side wiring provided on the transparent insulating film along the plurality of p-side electrodes of the red light-emitting AlGaInN-based microlight-emitting diode, the green light-emitting AlGaInN-based microlight-emitting diode, and the blue light-emitting AlGaInN-based microlight-emitting diode, respectively, and the first p-side wiring and the p-side electrode extraction electrodes of the red light-emitting AlGaInN-based microlight-emitting diode, the second p-side wiring and the p-side electrode extraction electrodes of the green light-emitting AlGaInN-based microlight-emitting diode, and the third p-side wiring and the p-side electrode extraction electrodes of the blue light-emitting AlGaInN-based microlight-emitting diode, respectively, being electrically connected to each other via a thin film fuse, and an n-side electrode extraction electrode provided on the transparent insulating film that is electrically connected to the n-side electrode through a contact hole provided in the transparent insulating film.

2. The micro light-emitting diode substrate according to claim 1, wherein a pad portion is provided at one end of each of the first p-side wiring, the second p-side wiring, and the third p-side wiring.

3. The microlight-emitting diode substrate according to claim 1, wherein the n-type GaN layer is provided on a sapphire substrate.

4. The microlight-emitting diode substrate and a drive circuit substrate having a plurality of drive circuits that can be independently controlled and driven arranged in a two-dimensional array, wherein the microlight-emitting diode substrate has a microlight-emitting diode array in which at least one red-emitting AlGaInN-based microlight-emitting diode, at least one green-emitting AlGaInN-based microlight-emitting diode and at least one blue-emitting AlGaInN-based microlight-emitting diode are arranged on an n-type GaN layer per pixel, and a transparent insulating film is provided to cover the microlight-emitting diode array. The red-emitting AlGaInN-based microlight-emitting diode, the green-emitting AlGaInN-based microlight-emitting diode, and the blue-emitting AlGaInN-based microlight-emitting diode each have an insulating film having at least one opening provided on the n-type GaN layer, a light-emitting layer provided on the n-type GaN layer in the portion of the opening in the insulating film, a p-type GaN layer provided on the light-emitting layer, a plurality of p-side electrodes provided separately from each other on the upper surface of the p-type GaN layer, and an n-side electrode provided on the n-type GaN layer in the portion where the light-emitting layer is not provided, and p-side electrode extraction electrodes electrically connected to each of the p-side electrodes are provided on the transparent insulating film, and a first p-side wiring, a second p-side wiring, and a third p-side wiring are provided on the transparent insulating film along the plurality of p-side electrodes of each of the red-emitting AlGaInN-based microlight-emitting diode, the green-emitting AlGaInN-based microlight-emitting diode, and the blue-emitting AlGaInN-based microlight-emitting diode. The first p-side wiring and the respective p-side electrode extraction electrodes of the red light-emitting AlGaInN-based microlight-emitting diodes, the second p-side wiring and the respective p-side electrode extraction electrodes of the green light-emitting AlGaInN-based microlight-emitting diodes, and the third p-side wiring and the respective p-side electrode extraction electrodes of the blue light-emitting AlGaInN-based microlight-emitting diodes are each electrically connected to each other via thin film fuses, and the n-side electrode extraction electrodes, which are electrically connected to the respective n-side electrodes through contact holes provided in the transparent insulating film, are provided on the transparent insulating film.The above-mentioned drive circuit board includes a first drive circuit, a second drive circuit, and a third drive circuit for driving the red light-emitting AlGaInN-based microlight-emitting diode, the green light-emitting AlGaInN-based microlight-emitting diode, and the blue light-emitting AlGaInN-based microlight-emitting diode, which constitute one pixel of the above-mentioned microlight-emitting diode board; a first extraction electrode connected to the terminal of the first drive circuit that is electrically connected to the first p-side wiring of the red light-emitting AlGaInN-based microlight-emitting diode; a second extraction electrode connected to the terminal of the second drive circuit that is electrically connected to the second p-side wiring of the green light-emitting AlGaInN-based microlight-emitting diode; and a third extraction electrode connected to the terminal of the third drive circuit that is electrically connected to the third p-side wiring of the blue light-emitting AlGaInN-based microlight-emitting diode; and wiring for setting the potential of the n-side electrodes of the red light-emitting AlGaInN-based microlight-emitting diode, the green light-emitting AlGaInN-based microlight-emitting diode, and the blue light-emitting AlGaInN-based microlight-emitting diode. A microlight-emitting diode display having a fourth extraction electrode electrically connected to the above wiring, wherein the first extraction electrode, the second extraction electrode, the third extraction electrode, and the fourth extraction electrode are electrically connected to the first p-side wiring, the second p-side wiring, the third p-side wiring, and the n-side electrode extraction electrode, respectively.

5. The microlight-emitting diode display according to claim 4, wherein the microlight-emitting diode substrate and the drive circuit board are superimposed so that the first extraction electrode, the second extraction electrode, the third extraction electrode, and the fourth extraction electrode are facing each other, and the first extraction electrode, the second extraction electrode, the third extraction electrode, and the n-side electrode extraction electrode are electrically connected to the first extraction electrode, the second extraction electrode, the third extraction electrode, and the n-side electrode extraction electrode, respectively.

6. The microlight-emitting diode display according to claim 4, wherein the drive circuit board comprises a substrate, a drive circuit section provided on the substrate, and an insulating film provided on the drive circuit section, and the first extraction electrode, the second extraction electrode, the third extraction electrode, and the fourth extraction electrode are provided in the first contact hole, the second contact hole, the third contact hole, and the fourth contact hole, respectively, provided in the insulating film.

7. The microlight-emitting diode display according to claim 4, wherein the microlight-emitting diode display is driven by an active matrix or a passive matrix.

8. A display comprising: a display section using a microlight-emitting diode substrate; a drive circuit board having a plurality of drive circuits that can be independently controlled and driven arranged in a two-dimensional array; and a flexible printed circuit for wiring the display section and the drive circuit board, wherein the microlight-emitting diode substrate comprises a microlight-emitting diode array in which at least one red-emitting AlGaInN-based microlight-emitting diode, at least one green-emitting AlGaInN-based microlight-emitting diode and at least one blue-emitting AlGaInN-based microlight-emitting diode are arranged on an n-type GaN layer per pixel; and a transparent insulating film provided to cover the microlight-emitting diode array. The red-emitting AlGaInN-based microlight-emitting diode, the green-emitting AlGaInN-based microlight-emitting diode, and the blue-emitting AlGaInN-based microlight-emitting diode each have an insulating film having at least one opening provided on the n-type GaN layer, a light-emitting layer provided on the n-type GaN layer in the portion of the opening in the insulating film, a p-type GaN layer provided on the light-emitting layer, a plurality of p-side electrodes provided separately from each other on the upper surface of the p-type GaN layer, and an n-side electrode provided on the n-type GaN layer in the portion where the light-emitting layer is not provided, and p-side electrode extraction electrodes electrically connected to each of the p-side electrodes are provided on the transparent insulating film, and a first p-side wiring, a second p-side wiring, and a third p-side wiring are provided on the transparent insulating film along the plurality of p-side electrodes of each of the red-emitting AlGaInN-based microlight-emitting diode, the green-emitting AlGaInN-based microlight-emitting diode, and the blue-emitting AlGaInN-based microlight-emitting diode. The first p-side wiring and the respective p-side electrode extraction electrodes of the red light-emitting AlGaInN-based microlight-emitting diodes, the second p-side wiring and the respective p-side electrode extraction electrodes of the green light-emitting AlGaInN-based microlight-emitting diodes, and the third p-side wiring and the respective p-side electrode extraction electrodes of the blue light-emitting AlGaInN-based microlight-emitting diodes are each electrically connected to each other via thin-film fuses.An extraction electrode for the n-side electrode, electrically connected to the n-side electrode through a contact hole provided in the transparent insulating film, is provided on the transparent insulating film, the drive circuit board comprises a first drive circuit, a second drive circuit, and a third drive circuit for driving the red light-emitting AlGaInN-based microlight-emitting diode, the green light-emitting AlGaInN-based microlight-emitting diode, and the blue light-emitting AlGaInN-based microlight-emitting diode, which constitute one pixel of the microlight-emitting diode substrate, respectively, a first extraction electrode connected to the terminal of the first drive circuit that is electrically connected to the first p-side wiring of the red light-emitting AlGaInN-based microlight-emitting diode, a second extraction electrode connected to the terminal of the second drive circuit that is electrically connected to the second p-side wiring of the green light-emitting AlGaInN-based microlight-emitting diode, and a third extraction electrode connected to the terminal of the third drive circuit that is electrically connected to the third p-side wiring of the blue light-emitting AlGaInN-based microlight-emitting diode, XR glasses comprising: wiring for setting the potential of the n-side electrode of the red-emitting AlGaInN-based microlight-emitting diode, the green-emitting AlGaInN-based microlight-emitting diode, and the blue-emitting AlGaInN-based microlight-emitting diode; and a fourth extraction electrode electrically connected to the wiring, wherein the first extraction electrode, the second extraction electrode, the third extraction electrode, and the fourth extraction electrode are electrically connected to the first p-side wiring, the second p-side wiring, the third p-side wiring, and the extraction electrode for the n-side electrode, respectively.

9. A microlight-emitting diode array having at least one first AlGaInN-based microlight-emitting diode, a second AlGaInN-based microlight-emitting diode, and a third AlGaInN-based microlight-emitting diode arranged on an n-type GaN layer, each pixel having an emission wavelength of 390 nm or more and 470 nm or less; and a transparent insulating film provided to cover the microlight-emitting diode array, wherein the first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode each have an insulating film having at least one opening provided on the n-type GaN layer, an emission-emitting layer provided on the n-type GaN layer in the portion of the insulating film with the opening, a p-type GaN layer provided on the emission-emitting layer, a plurality of p-side electrodes provided separately from each other on the upper surface of the p-type GaN layer, and an n-side electrode provided on the n-type GaN layer in the portion where the emission-emitting layer is not provided. A p-side electrode extraction electrode is provided on the transparent insulating film, electrically connected to each of the p-side electrodes through contact holes provided in the transparent insulating film. A first p-side wiring, a second p-side wiring, and a third p-side wiring are provided on the transparent insulating film along the plurality of p-side electrodes of the first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode. The first p-side wiring is electrically connected to each of the p-side electrode extraction electrodes of the first AlGaInN-based microlight-emitting diode, the second p-side wiring is connected to each of the p-side electrode extraction electrodes of the second AlGaInN-based microlight-emitting diode, and the third p-side wiring is electrically connected to each of the p-side electrode extraction electrodes of the third AlGaInN-based microlight-emitting diode via a thin-film fuse. A microlight-emitting diode substrate is provided on the transparent insulating film, wherein an extraction electrode for the n-side electrode, electrically connected to the n-side electrode through a contact hole provided in the transparent insulating film, is provided on the transparent insulating film.

10. The microlight-emitting diode substrate and a drive circuit substrate having a plurality of drive circuits that can be independently controlled and driven arranged in a two-dimensional array, wherein the microlight-emitting diode substrate has a microlight-emitting diode array in which at least one first AlGaInN-based microlight-emitting diode, a second AlGaInN-based microlight-emitting diode, and a third AlGaInN-based microlight-emitting diode are arranged on an n-type GaN layer, with each pixel having an emission wavelength of 390 nm or more and 470 nm or less, and a transparent insulating film provided to cover the microlight-emitting diode array. The first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode each have an insulating film having at least one opening provided on the n-type GaN layer, a light-emitting layer provided on the n-type GaN layer in the portion of the opening in the insulating film, a p-type GaN layer provided on the light-emitting layer, a plurality of p-side electrodes provided separately from each other on the upper surface of the p-type GaN layer, and an n-side electrode provided on the n-type GaN layer in the portion where the light-emitting layer is not provided, and p-side electrode extraction electrodes electrically connected to each of the p-side electrodes are provided on the transparent insulating film, and a first p-side wiring, a second p-side wiring, and a third p-side wiring are provided on the transparent insulating film along the plurality of p-side electrodes of the first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode, respectively. The first p-side wiring and the respective p-side electrode extraction electrodes of the first AlGaInN-based microlight-emitting diode, the second p-side wiring and the respective p-side electrode extraction electrodes of the second AlGaInN-based microlight-emitting diode, and the third p-side wiring and the respective p-side electrode extraction electrodes of the third AlGaInN-based microlight-emitting diode are each electrically connected to each other via thin-film fuses, and the n-side electrode extraction electrodes, electrically connected to the n-side electrode through contact holes provided in the transparent insulating film, are provided on the transparent insulating film, and the drive circuit board is,A first drive circuit, a second drive circuit, and a third drive circuit for driving the first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode, which constitute one pixel of the above-mentioned microlight-emitting diode substrate; a first extraction electrode connected to the terminal of the first AlGaInN-based microlight-emitting diode that is electrically connected to the first p-side wiring of the first AlGaInN-based microlight-emitting diode of the first drive circuit; a second extraction electrode connected to the terminal of the second AlGaInN-based microlight-emitting diode that is electrically connected to the second p-side wiring of the second AlGaInN-based microlight-emitting diode of the second drive circuit; and a third extraction electrode connected to the terminal of the third AlGaInN-based microlight-emitting diode that is electrically connected to the third p-side wiring of the third AlGaInN-based microlight-emitting diode of the third AlGaInN-based microlight-emitting diode of the first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and A microlight-emitting diode display comprising: a fourth extraction electrode electrically connected to the above wiring, wherein the first extraction electrode, the second extraction electrode, the third extraction electrode, and the fourth extraction electrode are electrically connected to the first p-side wiring, the second p-side wiring, the third p-side wiring, and the n-side electrode extraction electrode, respectively, and a wavelength conversion layer for extracting red light, green light, and blue light from the first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode, respectively, or a wavelength conversion layer for extracting red light and green light from any two of the first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode, respectively.

11. A display comprising: a display section using a microlight-emitting diode substrate; a drive circuit board having a plurality of drive circuits that can be independently controlled and driven arranged in a two-dimensional array; and a flexible printed circuit for wiring the display section and the drive circuit board, wherein the microlight-emitting diode substrate comprises: a microlight-emitting diode array in which at least one first AlGaInN-based microlight-emitting diode, a second AlGaInN-based microlight-emitting diode, and a third AlGaInN-based microlight-emitting diode are arranged on an n-type GaN layer, with each pixel having an emission wavelength of 390 nm or more and 470 nm or less; and a transparent insulating film provided to cover the microlight-emitting diode array. The first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode each have an insulating film having at least one opening provided on the n-type GaN layer, a light-emitting layer provided on the n-type GaN layer in the portion of the opening in the insulating film, a p-type GaN layer provided on the light-emitting layer, a plurality of p-side electrodes provided separately from each other on the upper surface of the p-type GaN layer, and an n-side electrode provided on the n-type GaN layer in the portion where the light-emitting layer is not provided, and p-side electrode extraction electrodes electrically connected to each of the p-side electrodes are provided on the transparent insulating film, and a first p-side wiring, a second p-side wiring, and a third p-side wiring are provided on the transparent insulating film along the plurality of p-side electrodes of the first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode, respectively. The first p-side wiring and the respective p-side electrode extraction electrodes of the first AlGaInN-based microlight-emitting diodes, the second p-side wiring and the respective p-side electrode extraction electrodes of the second AlGaInN-based microlight-emitting diodes, and the third p-side wiring and the respective p-side electrode extraction electrodes of the third AlGaInN-based microlight-emitting diodes are each electrically connected to each other via thin-film fuses.An extraction electrode for the n-side electrode, electrically connected to the n-side electrode through a contact hole provided in the transparent insulating film, is provided on the transparent insulating film, the drive circuit board comprises a first drive circuit, a second drive circuit, and a third drive circuit for driving the first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode, which constitute one pixel of the microlight-emitting diode substrate, respectively, a first extraction electrode connected to the terminal of the first AlGaInN-based microlight-emitting diode electrically connected to the first p-side wiring, a second extraction electrode connected to the terminal of the second AlGaInN-based microlight-emitting diode electrically connected to the second p-side wiring, and a third extraction electrode connected to the terminal of the third AlGaInN-based microlight-emitting diode electrically connected to the third p-side wiring, The first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode have wiring for setting the potential of the n-side electrode, and a fourth extraction electrode is electrically connected to the wiring, wherein the first extraction electrode, the second extraction electrode, the third extraction electrode, and the fourth extraction electrode are electrically connected to the first p-side wiring, the second p-side wiring, the third p-side wiring, and the extraction electrode for the n-side electrode, respectively. XR glasses having a wavelength conversion layer on the back surface of the n-type GaN layer for extracting red light, green light, and blue light from the first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode, respectively, or for extracting red light and green light from any two of the first AlGaInN-based microlight-emitting diode, the second AlGaInN-based microlight-emitting diode, and the third AlGaInN-based microlight-emitting diode, respectively.

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