Substrate processing apparatus

Abstract

The present invention addresses the problem of forming a thin and high-quality interfacial layer (IL). A substrate processing apparatus (100) is provided with a plurality of processing units (20) each of which performs predetermined processing on a substrate (W), a first transport robot that transports the substrate (W) between a container (P) held on a load port (LP) and a delivery unit, and a second transport robot that transports the substrate (W) between the delivery unit and the processing units (20). The processing units (20) are provided with a WET device (30), an FLA device (60), and a CL (50).

Description

Substrate processing equipment

[0001] This disclosure relates to a substrate processing apparatus. Substrates to be surface-treated include, for example, semiconductor wafers, substrates for flat panel displays (FPDs) such as liquid crystal displays and organic electroluminescence (EL) displays, substrates for optical discs, substrates for magnetic discs, substrates for magneto-optical discs, substrates for photomasks, ceramic substrates, and substrates for solar cells.

[0002] For example, Patent Document 1 describes a single-wafer substrate processing apparatus that processes substrates one at a time. In the substrate processing apparatus of Patent Document 1, an indexer robot loads and unloads substrates into and out of a container held in a holding unit, and places the substrates on a first mounting unit located in the transport path. A first main transport robot transfers substrates between itself and the indexer robot at the first mounting unit, and transfers substrates W between itself and the second main transport robot at the second mounting unit. The first main transport robot is located between the first processing unit and the second processing unit, and the second main transport robot is located between the second processing unit and the third processing unit. Any of the transport robots can access the first processing unit, the second processing unit, and the third processing unit.

[0003] Japanese Patent Application Publication No. 2021-048358

[0004] Incidentally, in recent years, there has been a demand for higher performance in logic devices, and the size of logic devices has been miniaturized. With the miniaturization of logic devices, the interfacial layer (IL) located between the gate and channel of a field-effect transistor (FET) needs to be made even thinner and of higher quality in order to improve device performance.

[0005] Therefore, the substrate processing apparatus must be equipped with processing units necessary to form thin and high-quality IL (Iron Isolate). Furthermore, during the substrate transport process within the substrate processing apparatus, it is necessary to reduce the risk of a native oxide film forming on the substrate surface and altering the silicon oxide film formed on the substrate.

[0006] One aspect of this disclosure aims to provide a substrate processing apparatus capable of forming a thin and high-quality interfacial layer (IL).

[0007] To solve the above problems, a substrate processing apparatus according to one aspect of the present disclosure comprises: a holding unit that holds a container for housing a substrate; a plurality of processing units that each perform predetermined processing on the substrate; a first transport robot that transports the substrate between the container held by the holding unit and a transfer unit; and a second transport robot that transports the substrate between the transfer unit and the processing unit, wherein the processing unit comprises: a processing liquid supply unit that supplies an oxidizing processing liquid to the surface of the substrate; a heating unit that heats the substrate that has been processed by the processing liquid supply unit with a flash lamp; and a cooling unit that cools the substrate that has been heated by the heating unit.

[0008] According to one aspect of this disclosure, a substrate processing apparatus capable of forming a thin and high-quality interfacial layer (IL) can be provided.

[0009] This is a schematic plan view showing the schematic configuration of a substrate processing apparatus according to Embodiment 1. This is a schematic side view showing the schematic configuration of a substrate processing apparatus according to Embodiment 1. This is a schematic side view showing the schematic configuration of a substrate processing apparatus according to Embodiment 1. This is a schematic side view showing an example of the configuration of a WET apparatus. This is a schematic side view showing an example of the configuration of an FLA apparatus. This is a block diagram showing the configuration of a substrate processing apparatus. This is a diagram showing a first modified example of the second center robot. This is a diagram showing a second modified example of the second center robot. This is a schematic plan view showing the schematic configuration of a substrate processing apparatus according to Embodiment 2. This is a schematic side view showing the schematic configuration of a substrate processing apparatus according to Embodiment 2. This is a diagram showing the change in the thickness of the silicon oxide film on the substrate before and after heat treatment by flash lamp annealing. This is a graph showing the thickness of the silicon oxide film and silicon strength after heat treatment under each heat treatment condition. This is a graph showing the thickness of the silicon oxide film and silicon strength after heat treatment under each heat treatment condition. This is a graph showing the thickness of the silicon oxide film and silicon strength after heat treatment under each heat treatment condition.

[0010] [Embodiment 1] Hereinafter, an embodiment of the present disclosure will be described in detail. For the sake of convenience of explanation, the front-to-back direction, left-to-right direction, and up-and-down direction of the substrate processing apparatus 100 will be defined as shown in Figure 1, etc. The up-and-down direction is based on the state in which the substrate processing apparatus 100 is installed on the floor. In addition, unless otherwise specified in this specification, "A to B" representing a numerical range means "A or more and B or less".

[0011] [Outline Configuration of Substrate Processing Equipment] An example of the configuration of the substrate processing equipment 100 will be described with reference to Figures 1 to 3. Figure 1 is a schematic plan view showing the schematic configuration of the substrate processing equipment 100 according to Embodiment 1. Figures 2 and 3 are schematic side views showing the schematic configuration of the substrate processing equipment 100 according to Embodiment 1.

[0012] The substrate processing apparatus 100 is an apparatus that performs various processes on a substrate W. The substrate W is a semiconductor substrate on which a silicon layer is formed, for example, a silicon wafer. The substrate processing apparatus 100 forms an interfacial layer (IL) located between the gate and channel of a field-effect transistor (FET). The IL is a layer that constitutes part of the gate oxide film. In this embodiment, the substrate processing apparatus 100 forms an IL on the substrate W between the Si channel and the High-K metal of the metal gate portion of a MOSFET (metal-oxide-semiconductor field-effect transistor), for example. The substrate processing apparatus 100 is a single-wafer type apparatus that processes substrates W one at a time.

[0013] As shown in Figure 1, the substrate processing apparatus 100 comprises an indexer unit 1, a processing unit 2, and a transport unit 3. The substrate processing apparatus 100 may also include a processing liquid supply device 7, an inert gas supply device 8, and a controller 9.

[0014] [Indexer Section] The indexer section 1 includes a load port LP and an indexer robot 10. The load port LP holds a container P that accommodates a substrate W. The load port LP is an example of a holding unit. The container P is, for example, a FOUP (front opening unified pod). Note that the container P is not limited to a FOUP, and may be a SMIF (Standard Mechanical Inter Face).

[0015] A plurality of the load ports LP are provided on the front surface of the substrate processing apparatus 100. The load port LP holds the container P, for example, when the container P is placed on a placement portion of the load port. The load port LP is preferably filled with an inert gas to make it difficult for a natural oxide film to form on the substrate W. In the present specification, the inert gas is a gas that makes it difficult for the substrate W to cause an oxidation reaction. As the inert gas, for example, nitrogen gas (N ２ ) and argon gas (Ar) are included.

[0016] The indexer robot 10 transports the substrate W between the container P held by the load port LP and the first transfer unit DP1. The indexer robot 10 is an example of a first transport robot. More specifically, the indexer robot 10 transports a substrate W that has not been processed in the processing section 2 from the container P to the first transfer unit DP1. Further, the indexer robot 10 transports the substrate W processed in the processing section 2 from the first transfer unit DP1 to the container P. The indexer section 1 is a space in which the indexer robot 10 is installed, and may include a chemical filter that purifies air fed into a transport space for transporting the substrate W. The chemical filter may be disposed, for example, above the transport space where the indexer robot 10 is installed.

[0017] As shown in FIG. 3, the indexer robot 10 includes a support column 11, a drive unit 12, a movable arm 13, and a hand 15. The support column 11 is a member extending in the vertical direction. The support column 11 is installed on the floor of the substrate processing apparatus 100. In the present embodiment, the support column 11 is installed so as not to be movable in the front-rear direction. Note that the support column 11 may be movable in the left-right direction. The drive unit 12 is pivotably attached to the upper end of the support column 11. For example, when a drive motor (not shown) is driven, the drive unit 12 pivots with respect to the support column 11. The drive unit 12 drives the movable arm 13. The drive unit 12 includes, for example, a drive motor (not shown) that drives the movable arm 13. The movable arm 13 is an arm that can expand and contract in the front-rear direction. The hand 15 is attached to the movable arm 13. When a driving force is applied from the drive unit 12, the hand 15 moves in the front-rear direction along with the expansion and contraction operation of the movable arm 13 in the front-rear direction.

[0018] The hand 15 is a hand for transferring a substrate W. The hand 15 includes a connecting portion 16 and a pair of claw portions 17. The connecting portion 16 is a portion that connects the pair of claw portions 17. The pair of claw portions 17 holds the substrate W to be transferred in a horizontal posture. The claw portions 17 are made of, for example, a material such as ceramic or quartz.

[0019] [Processing Unit] The processing unit 2 includes a plurality of processing units 20 that each perform predetermined processing on a substrate. The processing unit 20 includes a WET apparatus 30, a flash lamp annealing (FLA) apparatus 60, and a cooling unit (CL) 50. The WET apparatus 30 is an example of a processing liquid supply unit. CL 50 is an example of a cooling unit. The FLA apparatus 60 is an example of a heating unit. In the present embodiment, the WET apparatus 30 includes a first WET apparatus 30A and a second WET apparatus 30B. The processing unit 20 may include a notch aligner (AL) 40. The processing unit 20 is a unit for performing processing for forming IL on the substrate W and modifying the formed IL. The detailed configuration of the processing unit 20 will be described later.

[0020] The processing unit 2 may include a plurality of towers 21 to 23 capable of stacking and holding processing units 20 vertically. Towers 21 to 23 are an example of a unit holding structure. Towers 21 to 23 are arranged in parallel in the front-to-back direction to form a single tower group 25. In the front-to-back direction, the first tower 21, the second tower 22, and the third tower 23 are arranged in order from front to back. That is, the first tower 21 is the tower located furthest forward of the substrate processing device 100, and the third tower 23 is the tower located furthest rear of the substrate processing device 100. Note that a tower with multiple stacked chambers may be arranged behind the third tower 23.

[0021] Towers 21 to 23 are provided on both sides of the transport space 3S of the transport unit 3 in the left-right direction. In this specification, towers 21 to 23 located on the right side of the transport unit 3 are sometimes described with the letter "R" at the end of their reference numeral, and towers 21 to 23 located on the left side of the transport unit 3 are sometimes described with the letter "L" at the end of their reference numeral. Furthermore, the tower group 25 composed of towers 21R to 23R is referred to as tower group 25R, and the tower group 25 composed of towers 21L to 23L is referred to as tower group 25L.

[0022] Each of the towers 21 to 23 has multiple chambers stacked vertically, in which various processing units 20 are installed. That is, by installing the various processing units 20 in any of the chambers of towers 21 to 23, the various processing units 20 are held in any of the towers 21 to 23. As shown in Figure 2, the first tower 21 and the second tower 22 each have four chambers. The third tower 23 has two chambers.

[0023] Tower groups 25R and 25L each include a WET device 30, an FLA device 60, and a CL 50. The general configuration of the processing units 20 held by towers 21 to 23 constituting tower group 25, and the arrangement configuration of the processing units 20 in each tower 21 to 23 will be described below. In this embodiment, the arrangement configuration of the processing units 20 in each tower 21R to 23R of tower group 25R is the same as the arrangement configuration of the processing units 20 in each tower 21L to 23L of tower group 25L. For example, the arrangement configuration of the processing units 20 held by the first tower 21R is the same as the arrangement configuration of the processing units 20 held by the first tower 21L.

[0024] Referring to Figures 2 to 4, the processing units 20 held in each chamber of each tower 21 to 23 will be described. Figure 2 shows an example of a processing unit 20 installed in each chamber of each tower 21 to 23.

[0025] The first tower 21 holds a plurality of first wet devices 30A. In this embodiment, the first tower 21 holds three first wet devices 30A. More specifically, the first wet devices 30A are installed in each of the chambers 211 to 213 of the first tower 21. That is, the first wet devices 30A are installed in the three chambers from the bottom of the first tower 21.

[0026] The first tower 21 may hold the AL 40. More specifically, the AL 40 is installed in the chamber 214, which is the uppermost layer of the first tower 21. The AL 40 is a unit for rotating the substrate W and adjusting the position of the substrate W so that the position of the notches on the substrate W in the circumferential direction of the substrate W is at a specific position. The AL 40 adjusts the position of the substrate W, for example, before heat treatment is performed by the FLA apparatus 60. The AL 40 also adjusts the position of the substrate W after treatment before it is placed in the container P.

[0027] The second tower 22 holds a plurality of second wet devices 30B. In this embodiment, the second tower 22 holds three second wet devices 30B. More specifically, a second wet device 30B is installed in each of the chambers 221 to 223 of the second tower 22. That is, a second wet device 30B is installed in the three chambers from the bottom of the second tower 22.

[0028] The second tower 22 houses the CL50. More specifically, the CL50 is installed in the chamber 224, which is the uppermost layer of the second tower 22. The CL50 is a unit for cooling the substrate W heated in the FLA apparatus 60. The CL50 includes, for example, a metal cool plate for cooling the substrate W.

[0029] The WET apparatus 30, held in the first tower 21 and the second tower 22, is a device that supplies an oxidizing treatment solution to the surface of the substrate W. The WET apparatus 30 supplies the oxidizing treatment solution as a treatment solution to the surface of the silicon layer formed on the substrate W, thereby forming a silicon oxide film (SiO₂) on the surface of the silicon layer. ２ This is a device for forming a silicon oxide film. The silicon oxide film is formed as IL. As an oxidizing treatment solution, for example, ozonated deionized water (DIO) ３ ), ammonia hydrogen peroxide solution (SC-1), sulfuric acid hydrogen peroxide solution (SPM), hydrochloric acid hydrogen peroxide solution (SC-2), ozonated water (ozone (O ３ (Water in which ) is dissolved, and diluted hydrogen peroxide solution (dH ２ O ２ It is preferable that at least one of the above is used. By using the above-mentioned oxidizing treatment solution, a silicon oxide film can be efficiently and sufficiently produced.

[0030] The WET apparatus 30 may also supply a treatment solution other than an oxidizing treatment solution to the surface of the substrate W. For example, the WET apparatus 30 may supply a cleaning solution to the surface of the substrate W to clean the surface of the substrate W. Examples of cleaning solutions include ammonia-hydrogen peroxide solution (SC-1) and hydrochloric acid-hydrogen peroxide solution (SC-2). The WET apparatus 30 may also supply an etching solution to the surface of the substrate W to etch the silicon oxide film formed on the surface of the substrate W. Examples of etching solutions include ammonia-hydrogen peroxide solution (SC-1) and diluted hydrogen fluoride solution (dHF).

[0031] The first WET apparatus 30A is an apparatus for supplying an oxidizing treatment solution to the surface of a silicon layer formed on a substrate W before it is heated by the FLA apparatus 60, thereby forming a silicon oxide film on the surface of the silicon layer. The second WET apparatus 30B is an apparatus for supplying an oxidizing treatment solution again to the surface of the silicon oxide film on the substrate W that has been heated by the FLA apparatus 60. That is, in this embodiment, there is a tower (first tower 21) that holds a plurality of first WET apparatuses 30A and a tower (second tower 22) that holds a plurality of second WET apparatuses 30B. The configuration of the first WET apparatus 30A and the configuration of the second WET apparatus 30B are the same.

[0032] Next, an example of the configuration of the WET device 30 held in the first tower 21 and the second tower 22 will be described with reference to Figure 4. Figure 4 is a schematic side view showing an example of the configuration of the WET device 30.

[0033] As shown in Figure 4, the WET apparatus 30 comprises a processing liquid nozzle 31, a cup 34, and a spin chuck 35. The processing liquid nozzle 31 is connected to a processing liquid supply pipe 32. The processing liquid nozzle 31 discharges the oxidizing processing liquid supplied via the processing liquid supply pipe 32 toward the substrate W held in the spin chuck 35. The processing liquid supply pipe 32 is connected to a processing liquid supply device 7 (Figure 1), which is the source of the oxidizing processing liquid. The processing liquid supply pipe 32 is provided with an on-off valve 33. When the on-off valve 33 is open, the oxidizing processing liquid supplied from the processing liquid supply device 7 is supplied from the processing liquid supply pipe 32 to the processing liquid nozzle 31. The processing liquid nozzle 31 may be movable relative to the substrate W held in the spin chuck 35, or it may be fixed so as not to move relative to the substrate W held in the spin chuck 35.

[0034] The cup 34 catches the oxidizing treatment liquid that is scattered from the substrate W as the substrate W, which is held in the spin chuck 35, rotates. The cup 34 is cylindrical and is positioned to surround the spin chuck 35.

[0035] The spin chuck 35 rotates a single substrate W that is held horizontally. The spin chuck 35 is located inside the cup 34. The spin chuck 35 includes a rotating member 36, which is a disc-shaped member. The substrate W is fixed to the rotating member 36 by fixing pins (not shown). The rotating member 36 holds the substrate W, which is fixed by the fixing pins, horizontally. When a driving force is applied to the rotating member 36 from a drive motor (not shown), the rotating member 36 rotates around a rotation center that is in the vertical direction. The substrate W on the rotating member 36 may also be fixed to the rotating member 36 by being attracted to the upper surface of the rotating member 36.

[0036] As shown in Figure 2, the third tower 23 houses the FLA device 60. More specifically, the FLA device 60 is installed in the second-to-last chamber 232 of the third tower 23. The lowest chamber 231 of the third tower 23 is an unused, empty chamber. The FLA device 60 is housed in the third tower 23, which is separate from the first tower 21 and the second tower 22 that house the WET device 30.

[0037] The FLA apparatus 60 is an apparatus that heats a substrate W processed by the first WET apparatus 30A by means of a flash lamp 67. An example configuration of the FLA apparatus 60 will be described with reference to FIG. 5. FIG. 5 is a schematic side view showing an example configuration of the FLA apparatus 60. As shown in FIG. 5, the FLA apparatus 60 includes a halogen unit 61, a holding unit 62, and a flash unit 63.

[0038] The halogen unit 61 includes a halogen lamp 64 and a reflection plate 65. A plurality of halogen lamps 64 are provided. The halogen lamps 64 heat the substrate W held by the holding unit 62 from the lower side. The reflection plate 65 reflects light emitted from the plurality of halogen lamps 64 toward the holding unit 62. The holding unit 62 includes a susceptor 66 that holds the substrate W. The flash unit 63 includes a flash lamp 67 and a reflection plate 68. A plurality of flash lamps 67 are provided. Examples of the flash lamp 67 include a xenon flash lamp and a krypton flash lamp. The flash lamp 67 heats the substrate W held by the holding unit 62 by irradiating flash light onto the substrate W from the upper side. The reflection plate 68 reflects flash light emitted from the plurality of flash lamps 67 toward the holding unit 62. By heating the substrate W on which a silicon oxide film has been formed with the plurality of flash lamps 67, it is possible to rapidly heat the silicon oxide film on the substrate W in a short time. The plurality of flash lamps 67 may heat the substrate W within 5 ms, and may heat the substrate W such that the temperature of the substrate W becomes 600°C or higher. The lower limit of the temperature of the substrate W heated by the plurality of flash lamps 67 is preferably 600°C to 800°C.

[0039] The chamber 232 of the third tower 23 is, for example, N ２ or other inert gas, or oxygen (O ２ ) is filled therein. The holding unit 62 is filled with an inert gas or O ２ is filled therein. When filling the chamber 232 that holds the FLA apparatus 60 with an inert gas, the proportion of the inert gas is preferably 80% to 100%. In addition, in the chamber 232, N ２Other inert gases may be used to fill the chamber 232. ２ When O is filled, ２ The proportion is preferably between 80% and 100%.

[0040] The number of WET devices 30 in the substrate processing apparatus 100 is greater than the number of FLA devices 60. In this embodiment, there are 12 WET devices 30 and 2 FLA devices 60. More specifically, in the tower group 25R, there are 3 first WET devices 30A, 3 second WET devices 30B, and 1 FLA device 60.

[0041] The second tower 22, where the CL50 is provided, is positioned so that the substrate W processed by the FLA device 60 can be transported by the second center robot 80, and is located closest to the FLA device 60. That is, the second tower 22, where the CL50 is provided, is positioned next to the third tower 23, where the FLA device 60 is provided, in the front-to-back direction. More specifically, the substrate W heated in the FLA device 60 of the third tower 23R is transported to the CL50 of the second tower 22R, and the substrate W heated in the FLA device 60 of the third tower 23L is transported to the CL50 of the second tower 22L.

[0042] [Transportation Unit] The transport unit 3 transports the substrate W. The transport unit 3 comprises a first center robot 70 and a second center robot 80. The first center robot 70 and the second center robot 80 are examples of second transport robots. Tower groups 25 are provided on both sides of the first center robot 70 and the second center robot 80 in the left-right direction. That is, the first center robot 70 and the second center robot 80 are positioned between tower group 25R and tower group 25L. The first center robot 70 and the second center robot 80 are positioned in the transport space 3S. The transport space 3S forms a different space from the space where the indexer robot 10 is positioned. The first handover unit DP1 is located at the boundary between the transport space 3S and the space where the indexer robot 10 is positioned. The second handover unit DP2 is located inside the transport space 3S.

[0043] The first center robot 70 is a robot that transports substrates W. The first center robot 70 is a robot that transports substrates W between the first transfer unit DP1 and the processing unit 20. The first center robot 70 also transports substrates W between the second transfer unit DP2 and the processing unit 20. More specifically, the first center robot 70 transports substrates W that have not been processed from the first transfer unit DP1 to the first wet device 30A. The first center robot 70 transports processed substrates W from the first wet device 30A to the second transfer unit DP2. The first center robot 70 may also transport processed substrates W from AL40 to the second transfer unit DP2. Furthermore, the first center robot 70 transports substrates between the processing units 20 held by the first tower 21. That is, the first center robot 70 transports substrates W from the first wet device 30A to AL40.

[0044] The second center robot 80 is a robot that transports the substrate W. The second center robot 80 transports the substrate W between the second transfer unit DP2 and the processing unit 20. More specifically, the second center robot 80 transports the processed substrate W from the second transfer unit DP2 to the FLA device 60. The second center robot 80 transports the processed substrate W from the second WET device 30B to the second transfer unit DP2. The second center robot 80 also transports the substrate W between the processing units 20 held by the second tower 22, and between the processing units 20 held by the second tower 22 and the processing units 20 held by the third tower 23. For example, the second center robot 80 transports the substrate W from the FLA device 60 to CL 50, or from CL 50 to the second WET device 30B.

[0045] As shown in Figure 3, the first center robot 70 comprises a support column 71, a drive unit 72, a movable arm 73, and a hand 75. The support column 71 is a member that extends in the vertical direction. The support column 71 is installed on the floor of the transport space 3S of the substrate processing apparatus 100. The support column 71 is extendable and retractable in the vertical direction. When a drive motor (not shown) is driven, the support column 71 extends and retracts. In this embodiment, the support column 71 is immovable in the front-rear direction and the left-right direction.

[0046] The drive unit 72 is pivotably mounted on the upper end of the support column 71. When a drive motor (not shown) is driven, for example, the drive unit 72 pivots relative to the support column 71. The drive unit 72 drives the movable arm 73. The drive unit 72 includes, for example, a drive motor (not shown) that drives the movable arm 73. The movable arm 73 is an arm that can extend and retract in the front-rear direction. A hand 75 is attached to the movable arm 73. When a driving force is applied from the drive unit 72, the hand 75 moves in the front-rear direction in accordance with the extension and retraction movement of the movable arm 73 in the front-rear direction.

[0047] The hand 75 is a hand for transporting the substrate W. The hand 75 transports the substrate W between the first transfer unit DP1, the first wet device 30A, AL40, and the second transfer unit DP2. More specifically, the hand 75 transports the substrate W from the first transfer unit DP1 to the first wet device 30A, from the first wet device 30A to AL40, from AL40 to the second transfer unit DP2, and from the second transfer unit DP2 to the first transfer unit DP1. The hand 75 comprises a connecting part 76 and a pair of claw parts 77. The connecting part 76 is the part that connects the pair of claw parts 77. The pair of claw parts 77 hold the substrate W to be transported in a horizontal position. The claw parts 77 are made of a material such as ceramic or quartz.

[0048] The second center robot 80 comprises a support column 81, a drive unit 82, a movable arm 83, a hand support member 84, a hand 85, and a hand 88. The support column 81 is a member that extends in the vertical direction. The support column 81 is mounted on a rail 4 that extends in the front-rear direction and is installed on the floor of the transport space 3S of the substrate processing apparatus 100. The support column 81 is movable in the front-rear direction and moves along the rail 4. The support column 81 is extendable and retractable in the vertical direction. When a drive motor (not shown) is driven, the support column 81 moves in the front-rear direction or extends and retracts in the vertical direction. The support column 81 is not movable in the left-right direction.

[0049] The drive unit 82 is pivotably mounted on the upper end of the support column 81. When a drive motor (not shown) is driven, for example, the drive unit 82 pivots relative to the support column 81. The drive unit 82 drives the movable arm 83. The drive unit 82 includes, for example, a drive motor (not shown) that drives the movable arm 83. The movable arm 83 is an arm that can extend and retract in the front-rear direction. A hand support member 84 is attached to the movable arm 83. When a driving force is applied from the drive unit 82, the hand support member 84 moves in the front-rear direction in accordance with the extension and retraction movement of the movable arm 83. A hand 85 and a hand 88 are provided on the hand support member 84.

[0050] Hands 85 and 88 are hands for transporting the substrate W. Hand 85 is an example of a second hand. Hand 88 is an example of a first hand. Hand 85 transports the substrate W between the second transfer unit DP2, the second wet device 30B, and CL50. More specifically, hand 85 transports the substrate W from CL50 to the second wet device 30B, and from the second wet device 30B to the second transfer unit DP2. Hand 88 loads and unloads the substrate W to and from the FLA device 60. More specifically, hand 88 transports the substrate W from the second transfer unit DP2 to the FLA device 60, and from the FLA device 60 to CL50.

[0051] The hand 85 comprises a connecting member 86 and a pair of claw portions 87. The connecting member 86 is the part that connects the pair of claw portions 87. The pair of claw portions 87 hold the substrate W to be transported in a horizontal position. The claw portions 87 are made of a material such as ceramic or quartz.

[0052] The hand 88 comprises a connecting member 86 and a pair of claw portions 89. The connecting member 86 is the part that connects the pair of claw portions 89. The pair of claw portions 89 hold the substrate W to be transported in a horizontal position. The claw portions 89 are made of a heat-resistant material such as quartz. The hand 88 is located above the hand 85 in the vertical direction. That is, the hand 88 is provided above the hand 85 with respect to the hand support member 84.

[0053] [Processing Liquid Supply Device] As shown in Figure 1, a processing liquid supply device 7 is installed outside the substrate processing device 100. The processing liquid supply device 7 may also be installed inside the substrate processing device 100. The processing liquid supply device 7 is a device for supplying processing liquid to each of the WET devices 30 of towers 21 and 22. The processing liquid supply device 7 comprises a processing liquid tank (not shown) for containing the processing liquid and a processing liquid pump (not shown) for supplying the processing liquid to the processing liquid supply pipe 32. The processing liquid supply pipe 32 is connected to the processing liquid tank of the processing liquid supply device 7. When the processing liquid pump of the processing liquid supply device 7 is driven, processing liquid is supplied from the processing liquid tank to the processing liquid supply pipe 32. The processing liquid supply device 7 may be equipped with a valve (not shown) for adjusting the flow rate of the processing liquid supplied to the WET device 30. The processing liquid supply device 7 may also be equipped with a flow sensor for measuring the flow rate of the processing liquid flowing through the processing liquid supply pipe 32.

[0054] The processing liquid supply device 7 supplies an oxidizing processing liquid to each WET device 30. The processing liquid supply device 7 may supply the same type and the same mixing ratio of oxidizing processing liquid to the first WET device 30A and the second WET device 30B. The processing liquid supply device 7 may also be equipped with processing liquid tanks for storing processing liquids other than the oxidizing processing liquid. For example, the processing liquid supply device 7 may be equipped with at least one of the following: a processing liquid tank for storing a cleaning liquid and a processing liquid tank for storing an etching liquid. In this case, the processing liquid supply device 7 may supply different types or different mixing ratios of processing liquids to the first WET device 30A and the second WET device 30B.

[0055] [Inert Gas Supply Device] An inert gas supply device 8 is installed outside the substrate processing device 100. The inert gas supply device 8 may also be installed inside the substrate processing device 100. The inert gas supply device 8 is a device that creates an inert gas atmosphere on at least the substrate surface of the substrate W that has been treated with the oxidizing treatment solution during the period when the first center robot 70 and the second center robot 80 transport the substrate W from the WET device 30 to the FLA device 60. The inert gas supply device 8 is an example of an inert gas supply unit. In this embodiment, the inert gas supply device 8 supplies inert gas to the transport space 3S in the transport unit 3 where the substrate W is transported. In the transport space 3S, it is preferable that the proportion of inert gas is 80% to 100%. The inert gas supply device 8 may also supply inert gas to the transport space of the substrate W in the indexer unit 1 and to the chambers 211 to 213 and 221 to 223 that hold the WET device 30.

[0056] The inert gas supply device 8 comprises a gas tank (not shown) for containing inert gas and a pump (not shown) for supplying the inert gas contained in the gas tank to a gas supply pipe 800. The gas supply pipe 800 is connected to the target space to which the inert gas is supplied. The inert gas supply device 8 may also include a valve for adjusting the flow rate of the inert gas flowing through the gas supply pipe 800, and a filter for purifying the gas supplied to the target space. The inert gas supply device 8 may supply different types of inert gas or different mixing ratios depending on the space to which it is supplied. The inert gas supply device 8 may adjust the air pressure of the target space by adjusting the flow rate of the inert gas for each target space to which the inert gas is supplied.

[0057] [Controller] The controller 9 controls each part of the substrate processing apparatus 100. The internal configuration of the controller 9 will be described with reference to Figure 6. Figure 6 is a block diagram showing the configuration of the substrate processing apparatus 100. As shown in Figure 6, the controller 9 includes a processor 91 and a memory 92.

[0058] The processor 91 performs various processes in cooperation with the memory 92. The memory 92 stores information indicating control operations in the processor 91. The processor 91 performs various processes according to a program, which is information indicating control operations in the processor 91 and is stored in the memory 92. The processor 91 includes, for example, a CPU (Central Processing Unit), a DSP (Digital Signal Processor), a GPU (Graphic Processing Unit), and an MPU (Micro Processing Unit). The memory 92 includes, for example, a ROM (Read Only Memory), RAM (Random Access Memory), flash memory, and an HDD (Hard Disk Drive).

[0059] The processor 91 controls the indexer robot 10, the on / off valve 33, the spin chuck 35, AL40, CL50, the halogen lamp 64, the flash lamp 67, the first center robot 70, the second center robot 80, the processing liquid supply device 7, and the inert gas supply device 8.

[0060] [Transport operation of substrates by substrate processing equipment] An example of the transport operation of substrates W by the substrate processing equipment 100 will be described below.

[0061] First, the processor 91 controls the indexer robot 10 to transport the substrate W from the storage unit P to the first transfer unit DP1.

[0062] Next, the processor 91 controls the first center robot 70 to transport the substrate W from the first transfer unit DP1 to the first WET device 30A held in the first tower 21. After that, the processor 91 controls the first center robot 70 to transport the substrate W that has been processed in the first WET device 30A from the first WET device 30A to the AL 40 held in the first tower 21. More specifically, the processor 91 controls the first center robot 70 to transport the substrate W from the first WET device 30A to the AL 40 within the same first tower 21. For example, the substrate W that has been processed in the first WET device 30A in the first tower 21R is transported to the AL 40 in the first tower 21R.

[0063] Next, the processor 91 controls the first center robot 70 to transport the substrate W processed in AL40 from AL40 to the second transfer unit DP2. If the substrate processing apparatus 100 is not equipped with AL40, the processor 91 controls the first center robot 70 to transport the substrate W processed in the first WET device 30A from the first WET device 30A to the second transfer unit DP2.

[0064] Next, the processor 91 controls the second center robot 80 to transport the substrate W from the second transfer unit DP2 to the FLA device 60 held in the third tower 23 using the hand 88. The processor 91 may also control the first center robot 70 to transport the substrate W to the FLA device 60 in the third tower 23, which belongs to the same tower group 25 as the first tower 21 that holds the first WET device 30A that processed the substrate W. For example, a substrate W that has been processed by the first WET device 30A held in the first tower 21R of the tower group 25R may be transported to the FLA device 60 in the third tower 23R of the tower group 25R.

[0065] Next, the processor 91 controls the second center robot 80 to transport the substrate W processed by the FLA device 60 from the FLA device 60 to the CL 50 held in the second tower 22 using the hand 88. The processor 91 controls the first center robot 70 to transport the substrate W to the CL 50 of the second tower 22, which belongs to the same tower group 25 as the third tower 23, which holds the FLA device 60 that processed the substrate W. For example, a substrate W processed by the FLA device 60 held in the third tower 23R of tower group 25R is transported to the CL 50 of the second tower 22R of tower group 25R.

[0066] Next, the processor 91 controls the second center robot 80 to transport the substrate W processed in CL50 from CL50 to the second WET device 30B held in the second tower 22 using the hand 85. More specifically, the processor 91 controls the second center robot 80 to transport the substrate W from CL50 to the second WET device 30B within the same second tower 22. For example, the substrate W processed in CL50 of the second tower 22R is transported to the second WET device 30B of the second tower 22R. After that, the processor 91 controls the second center robot 80 to transport the substrate W processed in the second WET device 30B from the second WET device 30B to the second transfer unit DP2 using the hand 85.

[0067] Next, the processor 91 controls the first center robot 70 to transport the substrate W from the second transfer unit DP2 to the first transfer unit DP1. After that, the processor 91 controls the indexer robot 10 to transport the substrate W from the first transfer unit DP1 to the container P.

[0068] The above-described substrate processing apparatus 100 makes it possible to perform a formation process in which a silicon oxide film is formed on the surface of the silicon layer of the substrate W using an oxidizing treatment solution, a heating process in which the substrate W on which the silicon oxide film has been formed is heated with a flash lamp, and a cooling process in which the heated substrate W is cooled. Therefore, it is possible to cool the heated substrate W after the heating process. The quality of the silicon oxide film can be improved. In addition, in order to improve the quality of the silicon oxide film, it is necessary to shorten the transport time of the substrate W before and after the heating process. The above-described substrate processing apparatus 100 makes it possible to reduce the time required for transporting the substrate W between the formation process and the heating process, and between the heating process and the cooling process. Therefore, it is possible to prevent, as much as possible, the formation of a native oxide film on the IL surface and the alteration of the silicon oxide film during the transport of the substrate W. Thus, it is possible to provide a substrate processing apparatus that can form a thin and high-quality IL, for example, between the Si channel of the metal gate portion of a MOSFET and the High-K metal.

[0069] Furthermore, in the second center robot 80, by separating the hand 88 that loads and transports the substrate W into the FLA device 60 from the hand 85 that unloads the substrate W from the CL 50, the hand 85 does not accumulate heat. This reduces the possibility of deterioration of the silicon oxide film formed on the substrate W after cooling.

[0070] Furthermore, generally, the processing time for substrates W performed in the WET device 30 is longer than the processing time for substrates W performed in the FLA device 60. Therefore, the processing time of the WET device 30 becomes the rate-limiting factor in the throughput of the substrate processing device 100 (the number of substrates W that can be processed per unit of time). However, by increasing the number of WET devices 30 to more than the number of FLA devices 60, it becomes possible to perform the time-consuming processing in the WET devices 30 and the processing in the FLA devices 60 in parallel. This makes it possible to improve the throughput of the substrate processing device 100.

[0071] Furthermore, since the substrate processing apparatus 100 is equipped with a first WET apparatus 30A and a second WET apparatus 30B, it is possible to supply an oxidizing treatment solution again to the surface of the silicon oxide film on the heated substrate W. As a result, a film terminated with OH groups is formed on the surface of the silicon oxide film. This makes it possible to improve the adhesion between the silicon oxide film and the High-K metal when, for example, High-K metal is laminated on the silicon oxide film of the substrate W.

[0072] Furthermore, the substrate processing apparatus 100 is divided into a tower (first tower 21) that holds only the first WET apparatus 30A and a tower (second tower 22) that holds only the second WET apparatus 30B. Therefore, for example, if the types of processing liquids used in the first WET apparatus 30A and the second WET apparatus 30B are different, it is possible to use a common processing liquid supply pipe 32 arranged in the first tower 21 and the second tower 22 without having to separate them according to the type of processing liquid. This makes it easier to adjust the supply of processing liquid to the WET apparatus 30 held by each tower 21 and 22.

[0073] Furthermore, during the period when the substrate W is transported from the WET apparatus 30 to the FLA apparatus 60, by creating an inert gas atmosphere on at least the substrate surface of the substrate W that has been treated with the oxidizing treatment solution, the risk of spontaneous oxidation of the silicon oxide film formed on the surface of the substrate W can be reduced. This makes it possible to improve the quality of the silicon oxide film on the substrate W.

[0074] Furthermore, by holding CL50 in the second tower 22, which is closest to the third tower that holds the FLA device 60, the time required to transport CL50 from the FLA device 60 can be reduced. This reduces the temperature rise of the hand 88 of the second center robot 80 that transports the heated substrate W.

[0075] Furthermore, tower groups 25 are provided on both sides of the first center robot 70 and the second center robot 80 in the left-right direction. Therefore, compared to the case where tower groups 25 are provided on only one side of the first center robot 70 and the second center robot 80 in the left-right direction, the number of processing units 20 provided in the substrate processing apparatus 100 can be increased. This makes it possible to improve the processing performance of the substrate W by the substrate processing apparatus 100.

[0076] [First Modification] A first modification of the second center robot 80 will be described with reference to Figure 7. Figure 7 is a diagram showing the first modification of the second center robot 80. For the sake of explanation, the same reference numerals are used for components that have the same function as those described in the above embodiment, and their descriptions will not be repeated.

[0077] As shown in Figure 7, the second center robot 80, which loads and unloads substrates W to and from the FLA apparatus 60, may be configured to supply inert gas to the substrates W held by the claw portion 89 of the hand 88. That is, in this modified example, during the period when the second center robot 80 transports the substrates W processed in the first WET apparatus 30A to the FLA apparatus 60, it supplies inert gas supplied from the inert gas supply device 8 toward the substrate surface of the substrate W held by the claw portion 89 of the hand 88 that has been treated with the oxidizing treatment solution. As a result, at least the substrate surface of the substrate W that has been treated with the oxidizing treatment solution is in an inert gas atmosphere.

[0078] As shown in Figure 7, the second center robot 80 is equipped with an inert gas discharge unit 810. The inert gas discharge unit 810 comprises an inert gas discharge plate 811 having a plurality of gas discharge nozzles 812. The inert gas discharge plate 811 is positioned above the hand 88 relative to the hand support member 84. A plurality of gas discharge nozzles 812 are provided on the lower surface of the inert gas discharge plate 811. Each gas discharge nozzle 812 is connected to a gas supply pipe 800 and discharges inert gas supplied from the inert gas supply device 8. The gas discharge nozzles 812 discharge the inert gas toward the hand 88, i.e., downwards. With the configuration of the second center robot 80 equipped with the inert gas discharge unit 810, the substrate surface of the substrate W on the side treated with the oxidizing treatment liquid can be subjected to an inert gas atmosphere.

[0079] [Second Modification] A second modification of the second center robot 80 will be described with reference to Figure 8. Figure 8 is a diagram showing the second modification of the second center robot 80. For the sake of explanation, the same reference numerals are used for components that have the same function as those described in the above embodiment, and their descriptions will not be repeated.

[0080] As shown in Figure 8, the second center robot 80, which loads and unloads the substrate W to and from the FLA apparatus 60, may be configured to include a hand 89A. That is, in this modified example, during the period when the second center robot 80 transports the substrate W processed in the first WET apparatus 30A to the FLA apparatus 60, it supplies inert gas from the inert gas supply device 8 toward the substrate surface of the substrate W held by the hand 89A that has been treated with the oxidizing treatment solution. As a result, at least the substrate surface of the substrate W that has been treated with the oxidizing treatment solution is in an inert gas atmosphere.

[0081] Furthermore, as shown in Figure 8, the second center robot 80 is equipped with a hand 89A that uses Bernoulli's principle to suck and hold the substrate W. The hand 89A is equipped with a pair of claw portions 890 on which a plurality of suction pads 891 are provided. The pair of claw portions 890 may be U-shaped in plan view. The pair of claw portions 890 are attached to a connecting member 86 of the hand 89A. Note that the claw portions 890 are not limited to a U-shape in plan view, but may be Y-shaped, I-shaped, or the like.

[0082] Multiple suction pads 891 are provided on the lower surface of each claw portion 890 at intervals from each other. Each suction pad 891 is circular in shape when viewed from above. Each suction pad 891 is connected to a gas supply pipe 800 and blows out inert gas supplied from an inert gas supply device 8 upward. With a pair of claw portions 890 positioned directly below the substrate W, each suction pad 891 blows out inert gas toward the lower surface of the substrate W. That is, each suction pad 891 blows out inert gas toward the back surface of the substrate W on the side that has been treated with the oxidizing treatment solution. Each suction pad 891 causes the inert gas to flow along the lower surface of the substrate W. As the inert gas flows along the lower surface of the substrate W, a negative pressure is formed. That is, the air pressure on the lower surface of the substrate W is less than the air pressure on the upper surface of the substrate W. According to Bernoulli's principle, a downward force acts on the substrate W, and the substrate W is sucked toward each claw portion 890 (downwards). In other words, the substrate W is attracted by each suction pad 891. As a result, the suction pads 891 attract the substrate W without making contact with it. The pair of claw portions 890 may be provided with guide walls to restrict the movement of the substrate W held by the hand 89A.

[0083] Before the inert gas is blown out from each suction pad 891 toward the substrate W, a swirling flow of inert gas may be formed inside each suction pad 891, swirling around the central axis of the suction pad 891. Each suction pad 891 may then blow out the swirling flow of inert gas formed inside toward the substrate W.

[0084] With the configuration in which the second center robot 80 is equipped with a hand 89A, the substrate surface of the substrate W on the side treated with the oxidizing treatment solution can be subjected to an inert gas atmosphere.

[0085] [Embodiment 2] Another embodiment of the present disclosure will be described below with reference to Figures 9 to 11. Figure 9 is a schematic plan view showing the schematic configuration of the substrate processing apparatus 100A according to Embodiment 2. Figures 10 and 11 are schematic side views showing the schematic configuration of the substrate processing apparatus 100A according to Embodiment 2. For the sake of convenience of explanation, the same reference numerals are used for members having the same function as those described in the above embodiments, and their descriptions will not be repeated. The substrate processing apparatus 100A differs from the substrate processing apparatus 100 according to Embodiment 1 in that it has an upper transport space 3SU and a lower transport space 3SL.

[0086] The processing unit 2A of the substrate processing apparatus 100A includes two first towers 21A and second towers 22A capable of stacking and holding processing units 20 vertically. The first tower 21A is the tower located at the very front of the substrate processing apparatus 100A, and the second tower 22A is the tower located at the very rear of the substrate processing apparatus 100A. The first tower 21A and the second tower 22A are arranged in parallel in the front-to-back direction, forming a single tower group 25A.

[0087] In the left-right direction, the tower group 25A is provided on both sides of the second center robot 80A of the conveying unit 3A. In this specification, the first tower 21A and the second tower 22A located on the right side of the conveying unit 3A are sometimes described with the letter "R" at the end of their reference numerals, and the first tower 21A and the second tower 22A located on the left side of the conveying unit 3A are sometimes described with the letter "L" at the end of their reference numerals. Furthermore, the tower group 25A composed of the first tower 21AR and the second tower 22AR is referred to as tower group 25AR, and the tower group 25A composed of the first tower 21AL and the second tower 22AL is referred to as tower group 25AL.

[0088] As shown in Figure 10, the first tower 21A and the second tower 22A have multiple chambers stacked vertically, each containing various processing units 20. As shown in Figure 10, the first tower 21A has six chambers, and the second tower 22A has four chambers. In Figure 10, reference numeral 1000 indicates the arrangement of processing units 20 in the first tower 21AR and the second tower 22AR that constitute the tower group 25AR, and reference numeral 1001 indicates the arrangement of processing units 20 in the first tower 21AL and the second tower 22AL that constitute the tower group 25AL.

[0089] In this embodiment, the arrangement configuration of the processing units 20 in the first tower 21AR and the second tower 22AR of the tower group 25AR is different from the arrangement configuration of the processing units 20 in the first tower 21AL and the second tower 22AL of the tower group 25AL. For example, the arrangement configuration of the processing units 20 held by the second tower 22AR is different from the arrangement configuration of the processing units 20 held by the second tower 22AL.

[0090] As shown by reference numeral 1000 in Figure 10, the first tower 21AR holds three first wet devices 30A and three second wet devices 30B. More specifically, each of the chambers 211 to 213 located in the lower transport space 3SL of the first tower 21AR is equipped with a second wet device 30B. Each of the chambers 214 to 216 located in the upper transport space 3SU of the first tower 21AR is equipped with a first wet device 30A.

[0091] The second tower 22AR houses AL40, CL50, and FLA device 60. More specifically, CL50 is installed in chamber 221AR located in the lower transport space 3SL of the second tower 22AR. CL50 is installed in chamber 222AR located in the lower transport space 3SL of the second tower 22AR. Chamber 223AR located in the lower transport space 3SL of the second tower 22AR is an empty chamber. FLA device 60 is installed in chamber 224AR located in the upper transport space 3SU of the second tower 22AR.

[0092] As shown by reference numeral 1001 in Figure 10, the first tower 21AL houses three first wet devices 30A and three second wet devices 30B. More specifically, each of the chambers 211 to 213 located in the lower transport space 3SL of the first tower 21AL is equipped with a first wet device 30A. Each of the chambers 214 to 216 located in the upper transport space 3SU of the first tower 21AL is equipped with a second wet device 30B.

[0093] The second tower 22AL houses AL40, CL50, and FLA device 60. More specifically, the FLA device 60 is installed in chamber 221AL, located in the lower transport space 3SL of the second tower 22AL. Chamber 222AL, located in the upper transport space 3SU of the second tower 22AL, is an empty chamber. CL50 is installed in chamber 223AL, located in the upper transport space 3SU of the second tower 22AL. AL40 is installed in chamber 224AL, located in the upper transport space 3SU of the second tower 22AL.

[0094] As shown in Figure 10, CL50 is held in the second tower 22A that is opposite the second tower 22A that holds the FLA device 60, with the transport spaces 3SU and 3SL in between. In this embodiment as well, the FLA device 60 is held in the second tower 22A, which is different from the first tower 21A that holds the WET device 30.

[0095] As shown in Figure 11, in the transport section 3 of the substrate processing apparatus 100A, the transport space for transporting the substrate W is divided by a partition wall 300 into an upper transport space 3SU and a lower transport space 3SL. The upper transport space 3SU and the lower transport space 3SL form different spaces. The upper transport space 3SU forms a different space from the space where the indexer robot 10A is positioned. The lower transport space 3SL forms a different space from the space where the indexer robot 10A is positioned. The inert gas supply device 8 supplies inert gas to the upper transport space 3SU and the lower transport space 3SL in the transport section 3A.

[0096] A second center robot 80A is positioned in the upper transport space 3SU and the lower transport space 3SL, respectively. In this specification, the second center robot 80A positioned in the upper transport space 3SU may be referred to as the second center robot 80AU, and the second center robot 80A positioned in the lower transport space 3SL may be referred to as the second center robot 80AL.

[0097] The lower part of the support column 81A of the second center robot 80A is attached to the horizontal movement mechanism 5. The horizontal movement mechanism 5 allows the second center robot 80A to move in the forward and backward directions. As the support column 81A moves in the forward and backward directions driven by the horizontal movement mechanism 5, the hands 85 and 88 of the second center robot 80A move in the forward and backward directions.

[0098] Both ends of the horizontal movement mechanism 5 in the front-to-back direction are connected to the vertical movement mechanism 6. When the vertical movement mechanism 6 is driven, it moves the horizontal movement mechanism 5 in the vertical direction. As a result, the support column 81A moves in the vertical direction, and the hands 85 and 88 of the second center robot 80A move in the vertical direction.

[0099] An upper first transfer section DP1U is provided at the boundary between the upper transport space 3SU and the space where the indexer robot 10A is located. A lower first transfer section DP1L is provided at the boundary between the lower transport space 3SL and the space where the indexer robot 10A is located. In this embodiment, the substrate processing apparatus 100A does not include a first center robot 70 and a second transfer section DP2.

[0100] The indexer robot 10A of the substrate processing apparatus 100A moves in the vertical direction. More specifically, the support column 11A of the indexer robot 10A is extendable and retractable in the vertical direction. When a drive motor (not shown) is driven, the support column 11A extends and retracts in the vertical direction. The indexer robot 10A transports the substrate W between the container P held in the load port LP and the upper first transfer section DP1U, and between the container P held in the load port LP and the lower first transfer section DP1L.

[0101] [Transport operation of substrates by substrate processing equipment] An example of the transport operation of substrates W by substrate processing equipment 100A will be described below.

[0102] First, the processor 91 controls the indexer robot 10A to transport the substrate W from the container P to the upper first transfer section DP1U or the lower first transfer section DP1L.

[0103] Next, the processor 91 controls the second center robot 80A to transport the substrate W from the first transfer units DP1U and DP1L to the first WET device 30A held in the first tower 21A. More specifically, when the substrate W is placed on the upper first transfer unit DP1U, the processor 91 controls the second center robot 80AU to transport the substrate W from the upper first transfer unit DP1U to the first WET device 30A in the first tower 21AR using the hand 85. When the substrate W is placed on the lower first transfer unit DP1L, the processor 91 controls the second center robot 80AL to transport the substrate W from the lower first transfer unit DP1L to the first WET device 30A in the first tower 21AL using the hand 85.

[0104] Next, the processor 91 controls the second center robot 80A to transport the substrate W, which has been processed in the first WET device 30A, from the first WET device 30A to the AL40 held in the second tower 22A. More specifically, the processor 91 controls the second center robot 80AU to transport the substrate W from the first WET device 30A in the first tower 21AR to the AL40 in the second tower 22AL using the hand 85. Alternatively, the processor 91 controls the second center robot 80AL to transport the substrate W from the first WET device 30A in the first tower 21AL to the AL40 in the second tower 22AR using the hand 85.

[0105] Next, the processor 91 controls the second center robot 80A to transport the substrate W, which has undergone alignment processing in AL40, from AL40 to the FLA device 60. More specifically, the processor 91 controls the second center robot 80AU to transport the substrate W from AL40 in the second tower 22AL to the FLA device 60 in the second tower 22AR using the hand 88. Alternatively, the processor 91 controls the second center robot 80AL to transport the substrate W from AL40 in the second tower 22AR to the FLA device 60 in the second tower 22AL using the hand 88.

[0106] Next, the processor 91 controls the second center robot 80A to transport the substrate W processed by the FLA device 60 from the FLA device 60 to the CL 50. More specifically, the processor 91 controls the second center robot 80AU to use the hand 88 to transport the substrate W from the FLA device 60 in the second tower 22AR to the CL 50 in the second tower 22AL. Alternatively, the processor 91 controls the second center robot 80AL to use the hand 88 to transport the substrate W from the FLA device 60 in the second tower 22AL to the CL 50 in the second tower 22AR. In this embodiment, the second center robot 80A transports the substrate W processed by the FLA device 60 to the CL 50 held in the second tower 22A, which is opposite the second tower 22A that holds the FLA device 60, with the transport spaces 3SU and 3SL in between.

[0107] Next, the processor 91 controls the second center robot 80A to transport the substrate W processed at CL50 from CL50 to the second WET device 30B held in the first tower 21. More specifically, the processor 91 controls the second center robot 80AU to transport the substrate W from CL50 in the second tower 22AL to the second WET device 30B in the first tower 21AL using the hand 85. Alternatively, the processor 91 controls the second center robot 80AL to transport the substrate W from CL50 in the second tower 22AR to the second WET device 30B in the first tower 21AR using the hand 85.

[0108] Next, the processor 91 controls the second center robot 80A to transport the substrate W from the second WET device 30B of the first tower 21A to the first transfer sections DP1U and DP1L. More specifically, the processor 91 controls the second center robot 80AU and uses the hand 85 to transport the substrate W from the second WET device 30B of the first tower 21AL to the upper first transfer section DP1U. Alternatively, the processor 91 controls the second center robot 80AL and uses the hand 85 to transport the substrate W from the second WET device 30B of the first tower 21AR to the lower first transfer section DP1L.

[0109] Next, the processor 91 controls the indexer robot 10A to transport the substrate W from the upper first transfer section DP1U or the lower first transfer section DP1L to the container P.

[0110] The above-described substrate processing apparatus 100A provides the same effects as the substrate processing apparatus 100 according to Embodiment 1.

[0111] Next, referring to Figures 12 to 15, we will describe the experimental results regarding the thickness and quality of the silicon oxide film after a heat treatment in which a substrate W on which a silicon oxide film has been formed is heated by a plurality of flash lamps 67. First, referring to Figure 12, we will describe the change in the thickness of the silicon oxide film on the substrate W before and after heat treatment under each heat treatment condition. Figure 12 is a diagram showing the change in the thickness of the silicon oxide film on the substrate W before and after heat treatment by flash lamp annealing. The experiment shown in Figure 12 was performed using the substrate processing apparatus 100 according to Embodiment 1.

[0112] As shown in Figure 12, the change in the thickness of the silicon oxide film on the substrate W subjected to heat treatment under each heat treatment condition is shown by a bar graph. In the table shown in Figure 12, the vertical axis represents the thickness of the silicon oxide film, and the unit of thickness is angstroms (Å). The thickness of the silicon oxide film under each heat treatment condition is shown by two bar graphs (a plain bar graph and a shaded bar graph). The plain bar graph shows the thickness of the silicon oxide film after heat treatment. The shaded bar graph shows the increase or decrease in the thickness of the silicon oxide film before and after heat treatment, that is, the value obtained by subtracting the thickness of the silicon oxide film before heat treatment from the thickness of the silicon oxide film after heat treatment.

[0113] Figure 12 shows O ２ The changes in silicon oxide film thickness before and after heat treatment, measured by varying the heat treatment conditions for concentration and peak temperature, are shown. ２ The concentration is determined by the O2 in the chamber 232 of the FLA apparatus 60 where the substrate W undergoing heat treatment is located. ２ This refers to the concentration. Note that other heat treatment conditions (assist temperature, heating time, etc.) are the same, as are the conditions for the silicon oxide film formation process. ２ The concentration is O in the chamber 232 where the substrate W to be heat-treated is located. ２ It is concentration. ２ The concentration is N ２ Concentration 100%, O ２ Concentration 25%, O ２ Concentration 50%, and O ２ Four conditions were set with a concentration of 100%. ２ A concentration of 100% is O ２ This means a concentration of 0%. The peak temperature is the highest temperature that the surface of the substrate W is expected to reach due to heating by multiple flash lamps 67, and is the target temperature for heating the surface of the substrate W. Two conditions were set for the peak temperature: 950°C and 1150°C.

[0114] As shown in the plain bar graph in Figure 12, the thickness of the silicon oxide film after heat treatment is O ２ The thickness increased as the concentration increased. That is, N ２The silicon oxide film thickness of substrate W was thinnest when heat-treated under conditions of 100% concentration. ２ The silicon oxide film thickness of substrate W was thickest when heat-treated under conditions of 100% concentration. As shown in the shaded bar graph in Figure 12, N ２ Under conditions of 100% concentration, the increase or decrease in the thickness of the silicon oxide film before and after heat treatment was negative. That is, N ２ Under conditions of 100% concentration, the thickness of the silicon oxide film after heat treatment was thinner than the thickness of the silicon oxide film before heat treatment. ２ Under heat treatment conditions ranging from 25% to 100% concentration, the increase or decrease in silicon oxide film thickness before and after heat treatment was positive in all cases, resulting in a thicker silicon oxide film after heat treatment than before. Furthermore, the silicon oxide film thickness after heat treatment was thicker when the peak temperature was 1150°C than when the peak temperature was 950°C.

[0115] From the above results, in terms of the thickness of the silicon oxide film after heat treatment, O ２ Under heat treatment conditions that reduce concentration, especially N ２ It is thought that the thickness of the silicon oxide film after heat treatment can be reduced under heat treatment conditions of 100% concentration. ２ Even when the substrate W is heat-treated under heat treatment conditions of a concentration of 25% to 100%, it is considered possible to reduce the increase in the thickness of the silicon oxide film after heat treatment by adjusting the temperature at which the substrate W is heated by at least one of the multiple flash lamps 67 and halogen lamps 64 of the FLA apparatus 60. The experimental results shown in Figure 12 are O ２ Because the heat treatment conditions other than concentration and peak temperature are the same, O ２ Under heat treatment conditions of concentrations from 25% to 100%, the silicon oxide film thickness increased after heat treatment. However, by adjusting various heat treatment conditions (assist temperature, heating time, etc.), O ２ Even under heat treatment conditions of a concentration of 25% to 100%, the N shown in Figure 12 ２It is possible to adjust the film thickness to be equivalent to that of a silicon oxide film under heat treatment conditions at 100% concentration.

[0116] Next, with reference to Figures 13 to 15, the silicon strength of the silicon oxide film on the substrate W after heat treatment will be explained. Figures 13 to 15 are graphs showing the film thickness and silicon strength of the silicon oxide film after heat treatment under each heat treatment condition. In the graphs shown in Figures 13 to 15, the horizontal axis represents the film thickness (Å) of the silicon oxide film after heat treatment, and the vertical axis represents the silicon strength after heat treatment. The silicon strength was measured by measuring the amount of silicon (Si4+) present on the surface of the silicon oxide film using X-ray photoelectron spectroscopy (XPS).

[0117] Figure 13 shows N ２ This graph shows the relationship between the thickness of the silicon oxide film and the silicon strength under heat treatment conditions at a concentration of 100%. Reference line R1 in Figure 13 shows the relationship between the thickness of the silicon oxide film and the silicon strength in the untreated state. Plot A1 shows the thickness of the silicon oxide film and the silicon strength in the untreated state. Plot A2 shows N ２ This plot shows the thickness of the silicon oxide film and the silicon strength when heat-treated at a concentration of 100% and a peak temperature of 1150°C. Plot A3 is N ２ This plot shows the film thickness and silicon strength of the silicon oxide film after heat treatment at a concentration of 100% and a peak temperature of 950°C.

[0118] As shown in plots A2 and A3, N ２The silicon oxide film subjected to heat treatment under conditions of 100% concentration showed a decrease in film thickness and an increase in silicon strength compared to before heat treatment. In other words, by performing heat treatment after forming a silicon oxide film on the substrate W, a silicon oxide film with a thin film thickness and high film quality was formed on the substrate W. The other heat treatment conditions in plots A2 and A3 were assist temperature: 700°C, heating time: 1.4 ms, and atmospheric pressure: 100 kPa. The assist temperature is the maximum temperature that the lower surface of the substrate W is expected to reach by heating with multiple halogen lamps 64 of the FLA apparatus 60, and is the target temperature for heating the lower surface of the substrate W. The heating time is the time for heating with multiple flash lamps 67 of the FLA apparatus 60. The atmospheric pressure is the pressure inside the chamber 232 of the FLA apparatus 60 where the substrate W being heat-treated is located.

[0119] Next, referring to Figure 14, O ２ Concentration 25% and O ２ This section describes the relationship between the thickness of the silicon oxide film and the silicon strength under 100% concentration heat treatment conditions. The reference line R2 shown in Figure 14 represents the relationship between the thickness of the silicon oxide film and the silicon strength in the untreated state. Plots B1 and B2 in Figure 14 show the thickness of the silicon oxide film and the silicon strength in the untreated state. In plot B1, the time for supplying the oxidizing treatment solution to the substrate W (hereinafter referred to as the supply time of the oxidizing treatment solution) is 20 s (seconds), and in plot B2, the supply time of the oxidizing treatment solution is 60 s (seconds).

[0120] Plots B3 to B7 in Figure 14 show the relationship between the thickness of the silicon oxide film and the silicon strength under the following heat treatment conditions. Plot B8 is shown as a comparative example, and N ２ This shows the relationship between the thickness of the silicon oxide film and the silicon strength under 100% concentration heat treatment conditions. In plots B3 to B8, the supply time of the oxidizing treatment solution was set to 20 s, and a silicon oxide film was formed on the substrate W. B3: Assist temperature 700°C, peak temperature 950°C, heating time 1.4 ms, atmospheric pressure 100 kPa, O ２Concentration 100% B4: Assist temperature 700°C, peak temperature 950°C, heating time 1.4 ms, atmospheric pressure 100 kPa, O ２ Concentration 25% B5: Assist temperature 550°C, peak temperature 950°C, heating time 1.4 ms, atmospheric pressure 100 kPa, O ２ Concentration 100% B6: Assist temperature 550°C, peak temperature 950°C, heating time 1.4 ms, atmospheric pressure 100 kPa, O ２ Concentration 25% B7: Assist temperature 550°C, peak temperature 950°C, heating time 1.4 ms, atmospheric pressure 5 kPa, O ２ Concentration 25%

[0121] As shown in plots B3 to B7 of Figure 14, the strength of the silicon oxide film increased after heat treatment, i.e., the quality of the silicon oxide film improved. As shown in plots B3 to B6, the thickness of the silicon oxide film increased after heat treatment compared to the thickness of the silicon oxide film without heat treatment. From these results, O ２ Even under heat treatment conditions of 25% and 100% concentrations, the quality of the silicon oxide film is high. Therefore, it was found that by performing the etch-back treatment shown in the modified example described later after the heat treatment, it is possible to improve the quality of the silicon oxide film while reducing its thickness.

[0122] Also, as shown in plot B7, O ２ Even under heat treatment conditions of a concentration of 25%, by setting the atmospheric pressure inside the chamber 232 of the FLA apparatus 60 where the substrate W is located to 5 kPa, N ２ It was found that the same results could be obtained as under heat treatment conditions at a concentration of 100%. That is, O ２ Even under heat treatment conditions of a concentration of 25%, O ２ It was found that the thickness of the silicon oxide film and the silicon strength can be adjusted by adjusting the heat treatment conditions other than the concentration.

[0123] Next, referring to Figure 15, the relationship between the film thickness and silicon strength of the silicon oxide film after a process in which the oxidizing treatment solution is supplied again to the surface of the heat-treated silicon oxide film will be explained. The reference line R3 shown in Figure 15 is a line that shows the relationship between the film thickness and silicon strength of the silicon oxide film in the state before heat treatment. Plots C1 and C2 show the film thickness and silicon strength of the silicon oxide film in the state before heat treatment, and the supply time of the oxidizing treatment solution is different between plot C1 and plot C2.

[0124] Plot C3 is a comparative example, N ２ This plot shows the relationship between the thickness of the silicon oxide film and the silicon strength after heat treatment under 100% concentration heat treatment conditions, i.e., the relationship between the thickness of the silicon oxide film and the silicon strength when no further oxidizing treatment solution is supplied after heat treatment. In plots C4 and C5, the type of oxidizing treatment solution supplied again to the substrate after heat treatment is different. In plot C4, ozone (O) is used as the oxidizing treatment solution supplied again. ３ A mixture of ) and SC-1 (a mixture of ammonia water, hydrogen peroxide water, and water) is used. In plot C5, ozone (O) is used as the oxidizing treatment solution supplied again. ３ Only ) is used. Note that in plots C3 to C5, N ２ The concentration is 100%, and all other heat treatment conditions are the same.

[0125] As shown in plot C4 of Figure 15, ozone (O) is present on the surface of the heat-treated silicon oxide film. ３ When a mixture of ) and SC-1 (a mixed solution of ammonia water, hydrogen peroxide water, and water) is supplied, the silicon oxide film is shown in plot C3. ２ Under the heat treatment conditions of 100% concentration, the thickness of the silicon oxide film was thinner than that of the silicon oxide film that had only been heat-treated, and the silicon strength was also almost the same. As shown in plot C5, ozone (O) was applied to the surface of the heat-treated silicon oxide film. ３ When only ) was supplied, the silicon oxide film was thicker than the silicon oxide film thickness shown in plot C3.

[0126] From the above results, when heating with the flash lamp 67 is performed in an FLA apparatus 60 filled with inert gas, the quality of the silicon oxide film can be improved without increasing the thickness of the silicon oxide film formed by the oxidizing treatment solution. Therefore, a thinner silicon oxide film can be formed. Furthermore, when heating with the flash lamp 67 is performed in an FLA apparatus 60 filled with oxygen, the quality of the silicon oxide film can be improved.

[0127] [Summary] A substrate processing apparatus according to one aspect of the present disclosure comprises a holding unit for holding a container for housing a substrate, a plurality of processing units for performing predetermined processing on the substrate, a first transport robot for transporting the substrate between the container held by the holding unit and a transfer unit, and a second transport robot for transporting the substrate between the transfer unit and the processing unit, wherein the processing unit comprises a processing liquid supply unit for supplying an oxidizing processing liquid to the surface of the substrate, a heating unit for heating the substrate that has been processed by the processing liquid supply unit with a flash lamp, and a cooling unit for cooling the substrate that has been heated by the heating unit.

[0128] In a substrate processing apparatus according to one aspect of the present disclosure, the second transport robot may include a first hand for loading and unloading the substrate to and from the heating unit, and a second hand for transporting the substrate between the transfer unit, the processing liquid supply unit, and the cooling unit.

[0129] In a substrate processing apparatus according to one aspect of the present disclosure, the number of processing liquid supply units may be greater than the number of heating units.

[0130] In a substrate processing apparatus according to one aspect of the present disclosure, the processing liquid supply unit may include a first processing liquid supply unit that supplies the oxidizing processing liquid to the surface of a silicon layer formed on the substrate before it is heated by the heating unit to form a silicon oxide film on the surface of the silicon layer, and a second processing liquid supply unit that supplies the oxidizing processing liquid again to the surface of the silicon oxide film on the substrate after it has been heated by the heating unit.

[0131] A substrate processing apparatus according to one aspect of the present disclosure may include a plurality of unit holding structures capable of stacking and holding the processing units vertically, and the unit holding structure may include a first unit holding structure for holding a plurality of the first processing liquid supply units, and a second unit holding structure for holding a plurality of the second processing liquid supply units.

[0132] In a substrate processing apparatus according to one aspect of the present disclosure, an inert gas supply unit may be provided to create an inert gas atmosphere on at least the substrate surface of the substrate on the side that has been treated with the oxidizing processing liquid during the period when the second transport robot transports the substrate from the processing liquid supply unit to the heating unit.

[0133] In a substrate processing apparatus according to one aspect of the present disclosure, a plurality of unit holding structures capable of stacking and holding the processing units vertically are provided, and the unit holding structures are arranged in a position from which the substrates processed by the heating unit can be transported by the second transport robot, wherein the cooling unit may be provided in the unit holding structure located closest to the heating unit.

[0134] In a substrate processing apparatus according to one aspect of the present disclosure, a plurality of unit holding structures capable of stacking and holding the processing units vertically are provided, and a group of unit holding structures in which the unit holding structures are arranged in parallel is provided on both sides of the second transport robot, and each of the group of unit holding structures may include the processing liquid supply unit, the heating unit, and the cooling unit.

[0135] This disclosure is not limited to the embodiments described above, and various modifications are possible within the scope of the claims. Embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included in the technical scope of this disclosure.

[0136] 8 Inert gas supply device (inert gas supply unit) 10 Indexer robot (first transport robot) 20 Processing unit 21 First tower (first unit holding structure) 22 Second tower (second unit holding structure) 23 Third tower 25 Tower group (unit holding structure group) 30 WET device (processing liquid supply unit) 30A First WET device (first processing liquid supply unit) 30B Second WET device (second processing liquid supply unit) 40 AL 50 CL (cooling unit) 60 FLA device (heating unit) 70 First center robot (second transport robot) 80 Second center robot (second transport robot) 85 Hand (second hand) 88 Hand (first hand) 100 Substrate processing device DP1 First transfer unit DP2 Second transfer unit LP Load port (holding unit)

Claims

1. A substrate processing apparatus comprising: a holding unit for holding a container for housing substrates; a plurality of processing units for performing predetermined processing on the substrates; a first transport robot for transporting the substrates between the container held by the holding unit and a transfer unit; and a second transport robot for transporting the substrates between the transfer unit and the processing units, wherein each processing unit comprises: a processing liquid supply unit for supplying an oxidizing processing liquid to the surface of the substrate; a heating unit for heating the substrates that have been processed by the processing liquid supply unit with a flash lamp; and a cooling unit for cooling the substrates that have been heated by the heating unit.

2. The substrate processing apparatus according to claim 1, wherein the second transport robot comprises a first hand for loading and unloading the substrate to and from the heating unit, and a second hand for transporting the substrate between the transfer unit, the processing liquid supply unit, and the cooling unit.

3. The substrate processing apparatus according to claim 1, wherein the number of processing liquid supply units is greater than the number of heating units.

4. The substrate processing apparatus according to claim 1, comprising: a first processing liquid supply unit that supplies the oxidizing processing liquid to the surface of the silicon layer formed on the substrate before it is heated by the heating unit to form a silicon oxide film on the surface of the silicon layer; and a second processing liquid supply unit that supplies the oxidizing processing liquid again to the surface of the silicon oxide film on the substrate after it has been heated by the heating unit.

5. The substrate processing apparatus according to claim 4, comprising a plurality of unit holding structures capable of stacking and holding the processing units vertically, wherein the unit holding structure comprises a first unit holding structure for holding a plurality of the first processing liquid supply units, and a second unit holding structure for holding a plurality of the second processing liquid supply units.

6. The substrate processing apparatus according to claim 1, further comprising an inert gas supply unit that, during the period when the second transport robot transports the substrate from the processing liquid supply unit to the heating unit, provides an inert gas atmosphere to at least the substrate surface of the substrate on the side that has been treated with the oxidizing processing liquid.

7. The substrate processing apparatus according to claim 1, comprising a plurality of unit holding structures capable of stacking and holding the processing units vertically, wherein the unit holding structures are positioned so as to be transportable by the second transport robot for substrates processed by the heating unit, and the cooling unit is provided in the unit holding structure positioned closest to the heating unit.

8. The substrate processing apparatus according to claim 1, comprising a plurality of unit holding structures capable of stacking and holding the processing units vertically, a group of unit holding structures arranged in parallel on both sides of the second transport robot, and each of the group of unit holding structures comprising the processing liquid supply unit, the heating unit, and the cooling unit.

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