Method for manufacturing device, and drive device

Abstract

In this method for manufacturing a vibration element 100, a protective film formation step includes: an insulation layer formation step for forming a TEOS layer 30 having insulation properties so as to cover wiring 20; and a metal layer formation step for forming a Cr layer 31 and an Au layer 32 on the upper surface of the TEOS layer 30, the Cr layer 31 and the Au layer 32 each containing a metal different from a metal contained in the wiring 20 and protecting the wiring 20 from an etching solution during wet etching of the substrate 1.

Description

Device manufacturing method and drive device

[0001] This invention relates to a method for manufacturing a device and a driving device, and more particularly to a method for manufacturing a device and a driving device for wet etching a substrate.

[0002] Conventionally, a method for manufacturing a device that wet-etches a substrate is known (see, for example, Patent Document 1).

[0003] Patent Document 1 discloses a method for manufacturing a droplet ejection head (device) in which two cavity plates are bonded together between two electrode glass substrates. This method for manufacturing a droplet ejection head includes a step of wet etching while a gold-chromium alloy film is formed on the glass substrate.

[0004] Japanese Patent Publication No. 2008-265013

[0005] However, although not explicitly stated in Patent Document 1, wiring for supplying power to electrodes and the like may be formed on a glass substrate that is wet-etched. In that case, the gold-chromium alloy film described above is formed in contact with the wiring so as to cover it, and one of the two, the wiring or the gold-chromium alloy film, which has a higher ionization tendency, is corroded by galvanic corrosion through the etching solution. Here, not only is the wiring corroded by galvanic corrosion, but when the gold-chromium alloy film is corroded by galvanic corrosion, the wiring exposed by the corrosion of the gold-chromium alloy film is etched (corroded) by the etching solution. Therefore, there is a need for a device manufacturing method that can protect the wiring formed on the substrate when the substrate is wet-etched.

[0006] This invention was made to solve the above-mentioned problems, and one of its objectives is to provide a method for manufacturing a device and a driving device that can protect the wiring formed on a substrate when wet etching the substrate.

[0007] To achieve the above objective, a method for manufacturing a device according to the first aspect of this invention comprises a substrate preparation step of preparing a substrate, a wiring formation step of forming wiring containing metal on the substrate, a protective film formation step of forming a protective film so as to cover the wiring, and a wet etching step of removing a part of the substrate without removing the wiring and protective film by wet etching the substrate on which the protective film has been formed, wherein the protective film formation step includes an insulating layer formation step of forming an insulating layer having insulating properties so as to cover the wiring, and a metal layer formation step of forming a metal layer on the upper surface of the insulating layer that contains a metal different from the metal contained in the wiring and protects the wiring from the etching solution when wet etching the substrate.

[0008] In the device manufacturing method according to the first aspect of this invention, as described above, the protective film formation step includes an insulating layer formation step of forming an insulating layer having insulating properties so as to cover the wiring, and a metal layer formation step of forming a metal layer on the upper surface of the insulating layer, which contains a metal different from the metal contained in the wiring and protects the wiring from the etching solution when wet etching the substrate. As a result, the wiring and the metal layer are insulated by the insulating layer, so that galvanic metal contact corrosion between the wiring and the metal layer can be suppressed. Consequently, the wiring formed on the substrate can be protected when wet etching the substrate.

[0009] In the device manufacturing method according to the first aspect described above, preferably the insulating layer is SiO ｘ layer, SiN ｘ layer, AlO ｘ It is formed from at least one of the following: a layer, a BeO layer, a parylene layer, and a polyimide layer. With this configuration, SiO ｘ layer, SiN ｘ layer, AlO ｘ The insulating layer, formed from at least one of the layers, BeO layer, parylene layer, and polyimide layer, can easily insulate the wiring from the metal layer. ｘ " is a variable.

[0010] In this case, preferably, the insulating layer is formed from a TEOS layer. With this configuration, the insulating layer formed from the TEOS layer can easily insulate the wiring from the metal layer.

[0011] In the device manufacturing method according to the first aspect described above, preferably, the metal layer formation step includes an adhesion layer formation step of forming an adhesion layer on the upper surface of the insulating layer, and a resistance layer formation step of forming a resistance layer having resistance to etching solution on the upper surface of the adhesion layer so as to be in close contact with the insulating layer via the adhesion layer. With this configuration, the insulating layer and the resistance layer can be brought into close contact by the adhesion layer, so that etching solution does not penetrate through the gap between the insulating layer and the resistance layer and etch the insulating layer and wiring can be effectively suppressed.

[0012] In the device manufacturing method according to the first aspect described above, preferably, the wet etching step includes a step of removing modified portions of the substrate that have been modified to be easily removed by the etching solution. With this configuration, the substrate can be easily etched into a desired shape due to the difference in the degree of ease of removal by the etching solution between the modified portions of the substrate and the portions other than the modified portions. Furthermore, by removing the modified portions that are relatively easy to remove by the etching solution, the wet etching step can be completed in a relatively short time, thereby suppressing etching of wiring due to prolonged wet etching.

[0013] In this case, preferably, the substrate is formed from glass, and the substrate preparation step includes a substrate modification step in which a portion of the substrate is modified into a modified portion by irradiating the substrate with laser light. With this configuration, by irradiating the glass with laser light, a modified portion can be formed that is easily removed by an etching solution.

[0014] In the device manufacturing method according to the first aspect described above, preferably, a metal layer removal step is further provided after the wet etching step to remove the metal layer. With this configuration, it is possible to suppress adverse effects on the performance of the device caused by the remaining metal layer on the manufactured device. These adverse effects include deterioration of the insulation resistance between wirings and the formation of current leakage paths.

[0015] In a device manufacturing method in which the above metal layer formation step includes an adhesion layer formation step of forming an adhesion layer on the upper surface of an insulating layer, and a resistance layer formation step of forming a resistance layer having resistance to etching solution on the upper surface of the adhesion layer so as to be in close contact with the insulating layer via the adhesion layer, preferably the resistance layer is formed from at least one of the following: Mg layer, Ti layer, Zr layer, Hf layer, V layer, Ta layer, Cr layer, Mo layer, W layer, Mn layer, Tc layer, Re layer, Fe layer, Co layer, Ni layer, Ru layer, Os layer, Rh layer, Ir layer, Pd layer, Pt layer, Cu layer, Ag layer, Au layer, and Ge layer. With this configuration, the wiring can be easily protected from etching solutions by a resistant layer formed from at least one of the following: Mg layer, Ti layer, Zr layer, Hf layer, V layer, Ta layer, Cr layer, Mo layer, W layer, Mn layer, Tc layer, Re layer, Fe layer, Co layer, Ni layer, Ru layer, Os layer, Rh layer, Ir layer, Pd layer, Pt layer, Cu layer, Ag layer, Au layer, and Ge layer.

[0016] In a device manufacturing method in which the above metal layer formation step includes an adhesion layer formation step of forming an adhesion layer on the upper surface of an insulating layer, and a resistance layer formation step of forming a resistance layer having resistance to etching solution on the upper surface of the adhesion layer so as to be in close contact with the insulating layer via the adhesion layer, preferably, the adhesion layer is formed from at least one of a Cr layer and a Ti layer. With this configuration, the resistance layer and the insulating layer can be easily brought into close contact by the adhesion layer formed from at least one of a Cr layer and a Ti layer.

[0017] In a device manufacturing method further comprising a metal layer removal step after the wet etching step described above, preferably, the method further comprises a step after the metal layer removal step to remove at least the portion of the insulating layer corresponding to the area where wiring to the outside of the substrate is to be formed. With this configuration, the wiring can be easily exposed at the area where wiring to the outside of the substrate is to be formed.

[0018] A drive device according to a second aspect of this invention comprises a substrate formed from glass and having through holes and a drive unit in the portion other than the through holes, metal wiring provided on the substrate, and an insulating layer provided on the metal wiring which is insulating.

[0019] In the second aspect of this invention, the drive device comprises, as described above, metal wiring provided on a substrate and an insulating layer provided on the metal wiring, which is insulating. As a result, even when a metal layer is provided above the metal wiring to protect it during wet etching, the insulating layer provided on the metal wiring insulates the metal wiring from the metal layer, thereby suppressing dissimilar metal contact corrosion between the metal wiring and the metal layer. Consequently, a drive device is provided that can protect the (metal) wiring formed on the substrate when the substrate is wet etched.

[0020] According to the present invention, as described above, the wiring formed on the substrate can be protected when wet etching the substrate.

[0021] This figure shows the overall configuration of a vibrating element according to one embodiment of the present invention. This is an enlarged view of part A in Figure 1. This is a cross-sectional view of the vibrating element along line III-III in Figure 2 to explain the vibration operation of the drive unit. This is a flowchart showing a method for manufacturing a vibrating element according to one embodiment of the present invention. This is a cross-sectional view of the vibrating element along line V-V in Figure 2, corresponding to the flowchart in Figure 4 ((a): step S1, (b): step S2, (c): step S3, (d): step S4, (e): step S5, (f): step S6, (g): step S7, (h): step S8, (i): step S9). This figure explains the area to which laser light is irradiated according to one embodiment of the present invention. This is a flowchart showing a method for manufacturing a vibrating element according to a modified example of one embodiment of the present invention. A cross-sectional view of the vibrating element along the V-V line in Figure 2, corresponding to the flowchart in Figure 7 ((a): step S21, (b): step S22, (c): step S23, (d): step S24, (e): step S25, (f): step S26, (g): step S27, (h): step S28, (i): step S29, (j): step S30).

[0022] Hereinafter, an embodiment of the present invention will be described based on the drawings.

[0023] The configuration of the vibration element 100 according to this embodiment will be described with reference to Figures 1 to 3. Note that the vibration element 100 is an example of the "device" and "driving device" in the claims.

[0024] (Configuration of the Vibration Element) As shown in Figures 1 to 3, the vibration element 100 comprises a drive unit 10, a leg unit 11, a fixing unit 12, wiring 20, and a TEOS layer 30. Note that the wiring 20 and the TEOS layer 30 are omitted from Figure 1. Also, the TEOS layer 30 is omitted from Figure 2. Furthermore, elements that are not necessary to explain the present invention are omitted from the drawings as a whole. The vibration element 100 is, for example, a gyroscope (gyro sensor) that detects angular velocity using vibration phenomena. The vibration element 100 is also a so-called MEMS (Micro Electro Mechanical Systems). Note that in the drawings, the thickness direction of the vibration element 100 is the Z direction. Note that in Figure 1, the direction towards the front of the paper is the Z1 direction, and the direction towards the back of the paper is the Z2 direction. The TEOS layer 30 is an example of an "insulating layer" within the scope of the claims. The wiring 20 is an example of "wiring" and "metal wiring" within the scope of the claims.

[0025] As shown in Figure 1, the drive unit 10 has an annular shape when viewed from the thickness direction (Z direction) of the vibrating element 100. The leg portion 11 connects the drive unit 10 and the fixed portion 12 and supports the drive unit 10. The drive unit 10 vibrates while undergoing elastic deformation when vibration is applied. The leg portion 11 also moves in accordance with the vibration of the drive unit 10. The detailed vibration operation of the drive unit 10 will be described later.

[0026] As shown in Figure 1, the fixing portion 12 fixes the end of the leg portion 11 opposite to the side connected to the drive portion 10. As shown in Figure 1, the fixing portion 12 includes a pad portion 12a. The pad portion 12a is connected to wiring 20 (see Figure 2), which will be described later, and a bonding wire (not shown), which electrically connects the wiring 20 and the bonding wire. Wiring from the vibration element 100 to the outside of the vibration element 100 may be formed on the pad portion 12a, or wiring from the vibration element 100 to another location inside the vibration element 100 may be formed. Although only one pad portion 12a is shown in Figure 1, there may be multiple pad portions 12a. The pad portion 12a is an example of a "location for forming wiring to the outside of the substrate" as described in the claims.

[0027] Multiple leg portions 11 exist. In this embodiment, there are eight pairs of leg portions 11, each adjacent to the other in the circumferential direction of the drive unit 10, and spaced at equal angles. Furthermore, the leg portions 11 do not extend linearly from the drive unit 10 toward the fixed portion 12, but are bent twice. This double bending of the leg portions 11 allows them to support the vibrating drive unit 10. As shown in Figure 3, the drive unit 10 has a thickness t. Although not shown in the figure, the leg portions 11 and the fixed portion 12 also have a thickness t, similar to the drive unit 10.

[0028] In this embodiment, the drive unit 10, leg unit 11, and fixing unit 12 are formed by processing a substrate 1 (see Figure 5), which will be described later, and are made of glass. Also, as shown in Figure 1, the vibrating element 100 includes a through-hole 40. The drive unit 10, leg unit 11, and fixing unit 12 are located in the parts of the vibrating element 100 other than the through-hole 40. In this embodiment, there are multiple through-holes 40.

[0029] As shown in Figures 2 and 3, the wiring 20 is present on the upper surface (Z1 side surface) of the drive unit 10 and the leg unit 11. Although not shown in the figures, the wiring 20 is also present on the upper surface (Z1 side surface) of the fixing unit 12. In this embodiment, the wiring 20 exists in pairs on the leg unit 11, along the direction in which the leg unit 11 extends. Although not shown in Figure 2, the wiring 20 is present on all leg units 11 and around the entire circumference of the drive unit 10. Also, as shown in Figure 2, the wiring 20 on the leg unit 11 changes direction in the vicinity of the connection point between the leg unit 11 and the drive unit 10, extending along the circumferential direction of the drive unit 10. The wiring 20 extending on the drive unit 10 connects with the wiring 20 present on another leg unit 11 (not shown). The wiring 20 is made of metal. The wiring 20 is made of, for example, AlSi (aluminum silicon alloy).

[0030] As shown in Figure 3, the TEOS layer 30 is present so as to cover the wiring 20 on the drive unit 10. Although not shown in Figure 3, the TEOS layer 30 is also present so as to cover the wiring 20 on the leg portion 11 and the fixing portion 12. The TEOS layer 30 is present so as to cover the entire drive unit 10, the leg portion 11 and the fixing portion 12.

[0031] As shown in Figure 3, the wiring 20 on the drive unit 10 is affected by the magnetic field generated between a pair of yokes 110a and 110b, which are located separately from the vibrating element 100. A Lorentz force F acts on the drive unit 10 due to this magnetic field and the current flowing through the wiring 20. The pair of yokes 110a and 110b are connected to magnets (not shown). As shown in Figure 3, the Lorentz force F acts in a direction perpendicular to the thickness direction (Z direction) of the drive unit 10, and either radially inward or radially outward of the drive unit 10. The direction in which the Lorentz force F acts changes based on the direction of the current flowing through the wiring 20. Due to this Lorentz force F, the drive unit 10 vibrates while undergoing elastic deformation. When the drive unit 10 vibrates, the leg portion 11 supports the drive unit 10 while undergoing elastic deformation to follow the vibration of the drive unit 10. Furthermore, when angular velocity is applied to the drive unit 10, the vibration element 100 outputs a signal to apply vibrations that cancel out the secondary vibrations caused by the angular velocity. The magnitude of the angular velocity can then be determined from the magnitude of the above signal. In other words, in this embodiment, the vibration element 100 is an electromagnetic gyroscope (gyro sensor).

[0032] (Manufacturing Method for Vibration Element) Next, the manufacturing method for the vibration element 100 according to this embodiment will be described with reference to Figures 1 and 4 to 6.

[0033] As shown in Figures 4 and 5(a), in step S1, a substrate 1 formed from glass is prepared. The substrate 1 is, for example, fused silica having a flat plate shape.

[0034] Next, as shown in FIG. 4 and FIG. 5(b), in step S2, the substrate 1 is irradiated with a laser beam, whereby a portion of the substrate 1 is modified into a modified portion 13 that is easily etched (removed) by an etching solution (potassium hydroxide aqueous solution) described later. Here, the region where the substrate 1 is irradiated with the laser beam (where the modified portion 13 is formed) is the region shown by the hatched portion surrounded by the broken line in FIG. 6. This region (modified portion 13) is a portion that becomes the through-hole portion 40 (see FIG. 1) in the vibration element 100. Note that step S2 is an example of the "substrate modifying step" in the claims. Further, steps S1 and S2 are an example of the "substrate preparing step" in the claims.

[0035] Next, as shown in FIG. 4 and FIG. 5(c), in step S3, a metal-containing wiring 20 is formed on the substrate 1. Specifically, the wiring 20 is formed on the upper surface (surface on the Z1 side) of a portion of the substrate 1 other than the modified portion 13. Note that step S3 is an example of the "wiring forming step" in the claims.

[0036] Next, as shown in FIG. 4 and FIG. 5(d), in step S4, an insulating TEOS layer 30 is formed so as to cover the wiring 20. Specifically, the TEOS layer 30 is formed over the entire substrate 1 so as to cover the wiring 20 formed in step S3. Here, the TEOS layer 30 is a silicon oxide layer formed by PECVD (Plasma Enhanced Chemical Vapor Deposition). TEOS refers to tetraethyl orthosilicate. Note that step S4 is an example of the "insulating layer forming step" in the claims.

[0037] Next, as shown in FIG. 4 and FIG. 5(e), in step S5, a Cr layer 31 is formed on the upper surface (surface on the Z1 side) of the TEOS layer 30. Specifically, the Cr layer 31 is formed by sputtering on the upper surface of the TEOS layer 30 formed in step S4. This Cr layer 31 is a layer for bringing the TEOS layer 30 and an Au layer 32 described later into close contact. Note that the Cr layer 31 is an example of the "adhesion layer" in the claims. Further, step S5 is an example of the "adhesion layer forming step" in the claims.

[0038] Next, as shown in FIG. 4 and FIG. 5(f), in step S6, an Au layer 32 is formed on the upper surface (the surface on the Z1 side) of the Cr layer 31. Specifically, the Au layer 32 is formed on the upper surface of the Cr layer 31 by sputtering so that the Au layer 32 is in close contact with the TEOS layer 30 via the Cr layer 31. This Au layer 32 has resistance against an etchant (potassium hydroxide aqueous solution) used in wet etching described later. Note that the Au layer 32 is an example of the "resistance layer" in the claims. Further, step S6 is an example of the "resistance layer forming step" in the claims.

[0039] Note that, as shown in FIG. 5(f), hereinafter, a stacked body of the TEOS layer 30, the Cr layer 31, and the Au layer 32 formed in steps S4 to S6 is referred to as a protective film 33. That is, in steps S4 to S6, the protective film 33 is formed so as to cover the wiring 20. In a planar portion of the protective film 33 (a portion not located on the wiring 20), the thicknesses of the TEOS layer 30, the Cr layer 31, and the Au layer 32 are, for example, about 1000 nm, about 150 nm, and about 500 nm, respectively. Note that the layer including the Cr layer 31 and the Au layer 32 is an example of the "metal layer" in the claims. Further, steps S5 and S6 are an example of the "metal layer forming step" in the claims.

[0040] Next, as shown in FIG. 4 and FIG. 5(g), in step S7, a part of the protective film 33 is removed by IBE (Ion Beam Etching) or the like. Specifically, the protective film 33 corresponding to the outer edge of the modified portion 13 is removed. As shown in FIG. 5(g), a first recess 34 is formed in the portion from which the protective film 33 has been removed. Note that although FIG. 5(g) illustrates that only the protective film 33 is removed, in addition to a part of the protective film 33, the outer edge of the modified portion 13 (a part of the modified portion 13) may also be removed. Here, the TEOS layer 30 is exposed on the side surface of the first recess 34 on the wiring 20 side.

[0041] Next, as shown in Figures 4 and 5(h), in step S8, the modified portion 13 is removed by wet etching. Specifically, the substrate 1 on which the protective film 33 is formed after step S7 is immersed in a potassium hydroxide aqueous solution and wet-etched to remove the modified portion 13 without removing the wiring 20 and the protective film 33. At this time, the concentration and temperature of the potassium hydroxide aqueous solution are, for example, 33.7 W% and 80°C. In step S8, some parts of the substrate 1 other than the modified portion 13 are also removed (etched), but the degree is extremely small compared to the modified portion 13, so it does not pose a problem. Also, as mentioned above, the TEOS layer 30 is exposed on the side of the first recess 34 on the wiring 20 side, but the exposed area is extremely small, and the wiring 20 is not etched by the potassium hydroxide aqueous solution through the TEOS layer 30. The portion from which the modified portion 13 was removed in step S8 becomes the through-hole portion 40 (see Figure 1).

[0042] Furthermore, in step S8, the protective film 33 present on the modified portion 13 is separated from the substrate 1 by wet etching the substrate 1. Specifically, in this embodiment, in step S8, the protective film 33 surrounded by the portion removed in step S7 (first recess 34) is separated from the substrate 1 on which the wiring 20 is present by wet etching the substrate 1 through the outer edge of the modified portion 13 from which the protective film 33 was removed in step S7. Note that step S8 is an example of a "wet etching process" within the scope of the claims.

[0043] Next, as shown in Figures 4 and 5(i), in step S9, the Au layer 32 and the Cr layer 31 are removed. Specifically, the Au layer 32 is first removed with a gold etchant, and then the exposed Cr layer 31 is removed with a chromium etchant. Note that step S9 is an example of the "metal layer removal process" of the claims.

[0044] Next, as shown in Figure 4, in step S10, individual vibrating elements 100 are formed by cutting the substrate 1 after step S9 into smaller pieces. The above is the method for manufacturing the vibrating element 100 according to this embodiment.

[0045] (Effects of the Embodiment) Next, the effects of this embodiment will be described.

[0046] In this embodiment, as described above, the protective film formation step (steps S4 to S6) includes an insulating layer formation step (step S4) in which an insulating TEOS layer 30 is formed to cover the wiring 20, and a metal layer formation step (steps S5 and S6) in which a Cr layer 31 and an Au layer 32 containing a metal different from the metal contained in the wiring 20 are formed on the upper surface of the TEOS layer 30 to protect the wiring 20 from the etching solution (potassium hydroxide aqueous solution) used when wet etching the substrate 1. As a result, the wiring 20 is insulated from the Cr layer 31 and Au layer 32 by the TEOS layer 30, thereby suppressing dissimilar metal contact corrosion between the wiring 20 and the Cr layer 31 and Au layer 32. As a result, the wiring 20 formed on the substrate 1 can be protected when wet etching the substrate 1.

[0047] Furthermore, in this embodiment, as described above, steps S5 and S6 (metal layer formation step) include step S5 (adhesion layer formation step) in which a Cr layer 31 is formed on the upper surface of the TEOS layer 30, and step S6 (resistance layer formation step) in which an Au layer 32 having resistance to etching solution (potassium hydroxide aqueous solution) is formed on the upper surface of the Cr layer 31 so as to be in close contact with the TEOS layer 30 via the Cr layer 31. As a result, the TEOS layer 30 and the Au layer 32 can be brought into close contact by the Cr layer 31, so that etching solution (potassium hydroxide aqueous solution) can penetrate through the gap between the TEOS layer 30 and the Au layer 32 and etch the TEOS layer 30 and the wiring 20 can be effectively suppressed.

[0048] Furthermore, in this embodiment, as described above, step S8 (wet etching step) includes a step of removing the modified portion 13 on the substrate 1, which has been modified to be easily removed by the etching solution (potassium hydroxide aqueous solution). As a result, the substrate 1 can be easily etched into the desired shape due to the difference in the degree of ease of removal by the etching solution (potassium hydroxide aqueous solution) between the modified portion 13 and the portion other than the modified portion 13 on the substrate 1. In addition, by removing the modified portion 13, which is relatively easy to remove by the etching solution (potassium hydroxide aqueous solution), step S8 (wet etching step) can be completed in a relatively short time, thereby suppressing etching of the wiring 20 due to prolonged wet etching.

[0049] Furthermore, in this embodiment, as described above, the substrate 1 is formed from glass, and steps S1 and S2 (substrate preparation steps) include step S2 (substrate modification step) in which a part of the substrate 1 is modified into a modified portion 13 by irradiating the substrate 1 with laser light. As a result, by irradiating the glass with laser light, a modified portion 13 can be formed that is easily removed by an etching solution.

[0050] Furthermore, in this embodiment, as described above, a step S9 (metal layer removal step) is further included after step S8 (wet etching step) to remove the Cr layer 31 and the Au layer 32. This makes it possible to suppress adverse effects on the performance of the vibrating element 100 caused by the remaining Cr layer 31 and Au layer 32 on the manufactured vibrating element 100.

[0051] Furthermore, in this embodiment, as described above, the "resistance layer" of the claim is formed from the Au layer 32, and the "adhesion layer" of the claim is formed from the Cr layer 31. As a result, the Au layer 32 easily protects the wiring 20 and the substrate 1 from the etching solution (potassium hydroxide aqueous solution), and the Cr layer 31 easily brings the Au layer 32 and the TEOS layer 30 into close contact.

[0052] [Modifications] It should be noted that the embodiments disclosed herein are illustrative and not restrictive in all respects. The scope of the present invention is indicated by the claims rather than the description of the embodiments above, and further includes all modifications (modifications) within the meaning and scope equivalent to the claims.

[0053] In the above embodiment, an example was shown in which the TEOS layer 30 is exposed on the side of the first recess 34 on the wiring 20 side, but the present invention is not limited to this. For example, as shown in the modified examples in Figures 7 and 8, the TEOS layer 30 does not need to be exposed on the side of the recess corresponding to the first recess 34 (the third recess 36, which will be described later) on the wiring 20 side. The manufacturing method of the vibration element 200 in that case will be described with reference to Figures 7 and 8.

[0054] First, as shown in Figures 7 and 8(a), in step S21, a substrate 1 formed from glass is prepared.

[0055] Next, as shown in Figures 7 and 8(b), in step S22, a portion of the substrate 1 is modified into a modified portion 13 that is easily etched (removed) with a potassium hydroxide aqueous solution by irradiating the substrate 1 with laser light. Step S22 is an example of the "substrate modification step" in the claims. Steps S21 and S22 are examples of the "substrate preparation steps" in the claims.

[0056] Next, as shown in Figures 7 and 8(c), in step S23, wiring 20 is formed on the substrate 1. Specifically, wiring 20 is formed on the upper surface (Z1 side surface) of the substrate 1 other than the modified portion 13. Note that step S23 is an example of the "wiring formation process" within the claims.

[0057] Next, as shown in Figures 7 and 8(d), in step S24, a TEOS layer 30 is formed to cover the wiring 20. Specifically, a TEOS layer 30 is formed over the entire substrate 1 to cover the wiring 20 formed in step S23. Step S24 is an example of the "insulating layer formation step" within the claims.

[0058] Next, as shown in Figures 7 and 8(e), in step S25, a portion of the TEOS layer 30 is removed by IBE (Ion Beam Etting) or the like. As shown in Figure 8(e), a second recess 35 exists in the portion where the TEOS layer 30 was removed. Here, the side of the second recess 35 on the wiring 20 side is located above the portion of the substrate 1 other than the modified portion 13.

[0059] Next, as shown in Figures 7 and 8(f), in step S26, a Cr layer 31 is formed on the upper surface (Z1 side surface) of the TEOS layer 30. Specifically, the Cr layer 31 is formed by sputtering on the upper surface of the TEOS layer 30 formed in step S25 and the second recess 35. Step S26 is an example of the "adhesion layer formation step" within the claims.

[0060] Next, as shown in Figures 7 and 8(g), in step S27, an Au layer 32 is formed on the upper surface (Z1 side surface) of the Cr layer 31. Specifically, the Au layer 32 is formed on the upper surface of the Cr layer 31 formed in step S26 by sputtering. Step S27 is an example of the "resistance layer formation step" within the claims. As shown in Figure 5(g), in this case, the protective film 33 has a portion where the TEOS layer 30 is absent due to the second recess 35.

[0061] Next, as shown in Figures 7 and 8(h), in step S28, a portion of the protective film 33 is removed by IBE (Ion Beam Etting) or the like. Specifically, the protective film 33 corresponding to the outer edge of the modified portion 13 is removed. As shown in Figure 8(h), a third recess 36 exists in the portion where the protective film 33 has been removed. Although Figure 8(h) shows only the removal of the protective film 33, the outer edge of the modified portion 13 (part of the modified portion 13) may also be removed in addition to a portion of the protective film 33. Here, the TEOS layer 30 is not exposed on the side of the third recess 36 on the wiring 20 side. This is because the TEOS layer 30 covering the wiring 20 is covered on its top and sides by the Cr layer 31 and the Au layer 32.

[0062] Next, as shown in Figures 7 and 8(i), in step S29, the modified portion 13 is removed by wet etching. Specifically, the modified portion 13 is removed by wet etching the substrate 1 after step S28 by immersing it in an aqueous potassium hydroxide solution. Here, since the TEOS layer 30 is not exposed on the side of the third recess 36 on the wiring 20 side, etching of the wiring 20 by the aqueous potassium hydroxide solution through the TEOS layer 30 can be more effectively suppressed. Note that step S29 is an example of the "wet etching process" of the claims.

[0063] Next, as shown in Figures 7 and 8(j), in step S30, the Au layer 32 and the Cr layer 31 are removed. Specifically, the Au layer 32 is first removed with a gold etchant, and then the exposed Cr layer 31 is removed with a chromium etchant. Note that step S30 is an example of the "metal layer removal process" of the claims.

[0064] Next, as shown in Figure 7, in step S31, individual vibrating elements 200 are formed by cutting the substrate 1 after step S30 into smaller pieces. The above is a modified method for manufacturing the vibrating elements 200.

[0065] Furthermore, although the above embodiment shows the vibration element 100 as a gyroscope, the present invention is not limited to this. For example, the vibration element 100 may be a sensor other than a gyroscope, or an actuator, mirror, microphone, etc.

[0066] Furthermore, although the above embodiment shows an example in which the substrate 1 is formed from glass, the present invention is not limited to this. For example, the substrate 1 may be formed from both silicon and glass, as long as the areas where the through-holes 40 are formed are made of glass. Also, the glass may be silicon oxide, not just fused silica.

[0067] Furthermore, although the above embodiment shows an example in which an adhesion layer (Cr layer 31) is formed between the insulating layer (TEOS layer 30) and the resistance layer (Au layer 32), the present invention is not limited thereto. For example, if the insulating layer and the resistance layer are in sufficient adhesion, an adhesion layer may not be formed. Also, if the adhesion layer has sufficient resistance to the etching solution used in wet etching, a resistance layer may not be formed.

[0068] Furthermore, although the above embodiment shows an example where the etching solution used in wet etching is an aqueous potassium hydroxide solution, the present invention is not limited to this. For example, the etching solution may be an aqueous solution of hydrofluoric acid and sodium hydroxide. In that case, the laser irradiation conditions for forming the modified portion 13, the adhesion layer and the resistance layer should be selected to be appropriate for that etching solution.

[0069] Furthermore, although the above embodiment shows an example in which a part of the substrate 1 is modified into a modified portion 13 by irradiating the substrate 1 with laser light, the present invention is not limited to this. For example, the modified portion 13 may be formed by means other than laser light. Also, it is not necessary to form a modified portion 13.

[0070] Furthermore, although the above embodiment shows an example in which the Au layer 32 and Cr layer 31 are removed after wet etching, and the TEOS layer 30 is not removed, the present invention is not limited thereto. For example, the Au layer 32 and Cr layer 31 may not be removed after wet etching, or the TEOS layer 30 may be removed after wet etching. When removing the TEOS layer 30, the entire TEOS layer 30 may be removed, or only a part of the TEOS layer 30 may be removed. When removing only a part of the TEOS layer 30, the part corresponding to the pad portion 12a (the part that forms wiring to the outside of the substrate) may be removed in order to expose the metal wiring, or the parts corresponding to the drive unit 10 and the leg portion 11 may be removed in order to improve the Q value.

[0071] Furthermore, although the above embodiment shows an example where the vibration element 100 is electromagnetic, the present invention is not limited to this. For example, the vibration element 100 may be electrostatic or piezoelectric.

[0072] Furthermore, in the above embodiment, an example is shown in which the step of forming the wiring 20 (step S3) is performed after the step of forming the modified portion 13 (step S2), but the present invention is not limited thereto. For example, the modified portion 13 may be formed after the wiring 20 is formed, or the modified portion 13 may be formed after the protective film 33 is formed. That is, the modified portion 13 may be formed at any time as long as it is before step S8.

[0073] Furthermore, in the above embodiment, an example is shown in which the through-hole portion 40 is formed by a wet etching step (step S8), but the present invention is not limited thereto. For example, a non-penetrating recess opened to one side (for example, the Z1 side) may be formed. Further, in wet etching, a non-penetrating recess opened to one side (for example, the Z1 side) may be formed, and then the substrate 1 is polished from the other side (for example, the Z2 side) in a subsequent polishing step to form the through-hole portion 40. In that case, the substrate 1 prepared in step S1 may have a thickness larger than the thickness t of the vibration element 100 (see FIG. 3).

[0074] Furthermore, in the above embodiment, an example is shown in which the through-hole portion 40 is formed in order to form vibrating portions (the driving portion 10 and the leg portion 11) from the substrate 1, but the present invention is not limited thereto. For example, the portion formed by the through-hole portion 40 does not need to vibrate.

[0075] Furthermore, in the above embodiment, an example is shown in which the wiring 20 is formed of AlSi (aluminum silicon alloy), but the present invention is not limited thereto. For example, the wiring 20 may be formed of Al, or may be formed of other metals.

[0076] Furthermore, in the above embodiment, an example is shown in which the TEOS layer 30 is applied as the "insulating layer" in the claims, but the present invention is not limited thereto. For example, a layer other than the TEOS layer may be applied as the "insulating layer" in the claims. Other than the TEOS layer, SiO other than the TEOS layer ｘ layer, SiN ｘ layer, AlO ｘ layer, BeO layer, parylene layer, polyimide layer, and the like are applicable. Note that " ｘ " is a variable. SiOｘ The layer is, for example, SiO ２ Layers, etc. SiN ｘ The layers are, for example, Si ３ N ４ These are layers, etc. AlO ｘ The layers are, for example, Al ２ O ３ These are layers, etc.

[0077] Furthermore, although the above embodiment shows an example in which a Cr layer 31 is applied as the "adhesion layer" of the claim, the present invention is not limited thereto. For example, a layer other than a Cr layer may be applied as the "adhesion layer" of the claim. A Ti layer or the like can be applied instead of a Cr layer.

[0078] Furthermore, although the above embodiment shows an example in which the Au layer 32 is applied as the "resistance layer" of the claims, the present invention is not limited thereto. For example, a layer other than the Au layer may be applied as the "resistance layer" of the claims. Other than the Au layer, Mg layer, Ti layer, Zr layer, Hf layer, V layer, Ta layer, Cr layer, Mo layer, W layer, Mn layer, Tc layer, Re layer, Fe layer, Co layer, Ni layer, Ru layer, Os layer, Rh layer, Ir layer, Pd layer, Pt layer, Cu layer, Ag layer, and Ge layer can be applied.

[0079] Furthermore, in the above embodiment, an example was shown in which a portion of the protective film 33 is removed in step S7 by IBE (Ion Beam Etching) or the like, but the present invention is not limited thereto. For example, a portion of the protective film 33 may be removed by wet etching, or by dry etching such as gas etching or sputter etching.

[0080] 1 Substrate 10 Drive unit 12a Pad unit (area for forming wiring to the outside of the substrate) 13 Modified unit 20 Wiring (wiring, metal wiring) 30 TEOS layer (insulating layer) 31 Cr layer (adhesion layer) 32 Au layer (resistance layer) 33 Protective film 40 Through-holes 100, 200 Vibration element (device, drive device)

Claims

1. A method for manufacturing a device, comprising: a substrate preparation step of preparing a substrate; a wiring formation step of forming wiring containing metal on the substrate; a protective film formation step of forming a protective film so as to cover the wiring; and a wet etching step of removing a part of the substrate without removing the wiring and the protective film by wet etching the substrate on which the protective film has been formed, wherein the protective film formation step includes an insulating layer formation step of forming an insulating layer having insulating properties so as to cover the wiring, and a metal layer formation step of forming a metal layer on the upper surface of the insulating layer, which contains a metal different from the metal contained in the wiring and protects the wiring from the etching solution when wet etching the substrate.

2. The insulating layer is SiO ｘ layer, SiN ｘ layer, AlO ｘ A method for manufacturing the device according to claim 1, comprising at least one of a layer, a BeO layer, a parylene layer, and a polyimide layer.

3. The method for manufacturing the device according to claim 2, wherein the insulating layer is formed from a TEOS layer.

4. The method for manufacturing a device according to claim 1, wherein the metal layer formation step includes an adhesion layer formation step of forming an adhesion layer on the upper surface of the insulating layer, and a resistance layer formation step of forming a resistance layer having resistance to the etching solution on the upper surface of the adhesion layer such that it is in close contact with the insulating layer via the adhesion layer.

5. The method for manufacturing the device according to claim 1, wherein the wet etching step includes a step of removing a modified portion of the substrate that has been modified to be easily removed by the etching solution.

6. The method for manufacturing the device according to claim 5, wherein the substrate is formed from glass, and the substrate preparation step includes a substrate modification step of modifying a part of the substrate to the modified portion by irradiating the substrate with laser light.

7. The method for manufacturing a device according to claim 1, further comprising a metal layer removal step of removing the metal layer after the wet etching step.

8. The method for manufacturing the device according to claim 4, wherein the resistant layer is formed from at least one of the following: Mg layer, Ti layer, Zr layer, Hf layer, V layer, Ta layer, Cr layer, Mo layer, W layer, Mn layer, Tc layer, Re layer, Fe layer, Co layer, Ni layer, Ru layer, Os layer, Rh layer, Ir layer, Pd layer, Pt layer, Cu layer, Ag layer, Au layer, and Ge layer.

9. The method for manufacturing the device according to claim 4, wherein the adhesion layer is formed from at least one of a Cr layer and a Ti layer.

10. The method for manufacturing the device according to claim 7, further comprising the step of removing at least a portion of the insulating layer corresponding to a portion where wiring to the outside of the substrate is to be formed, after the metal layer removal step.

11. A drive device comprising: a substrate formed from glass and having through holes and a drive unit in the portion other than the through holes; metal wiring provided on the substrate; and an insulating layer provided on the metal wiring, which is insulating.

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