Thin film deposition system

Abstract

The present invention provides a thin film deposition system. The thin film deposition system comprises a first gas source, a first gas pipe, and a second gas pipe. The first gas source is used for providing a first gas for forming a stress thin film. A first end of the first gas pipe is connected to the first gas source, and a second end of the first gas pipe is aligned with a first region and a second region on the back surface of a wafer, wherein the first region and the second region are symmetrically distributed with respect to a first radial direction of the wafer. A first end of the second gas pipe is connected to the first gas source, and a second end of the second gas pipe is aligned with a third region and a fourth region of the back surface of the wafer, wherein the third region and the fourth region are symmetrically distributed with respect to a second radial direction of the wafer.

Description

A thin film deposition system Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and more particularly to a thin film deposition system. Background Technology

[0002] In modern semiconductor manufacturing processes, the design of client chips is becoming increasingly complex, especially at the wafer level. The physical layout and structural symmetry of the chip have a more and more significant impact on subsequent process steps. During the manufacturing process, wafers are prone to bending due to factors such as material stress and temperature changes, and this deformation may differ in the X and Y directions.

[0003] In critical wafer manufacturing processes, such as bonding, wafer alignment accuracy and bonding strength are crucial factors determining the performance of the final product. However, due to inconsistent wafer curvature in the X and Y directions, achieving high-precision alignment (ART < 100nm) during bonding is difficult, thus affecting the accuracy and yield of subsequent process steps.

[0004] In order to overcome the above-mentioned defects in the existing technology, there is an urgent need in the field for a thin film deposition system to eliminate wafer bending, so that the wafer can maintain a stable physical morphology during the bonding process, thereby improving the manufacturing precision and yield of the product. Summary of the Invention

[0005] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0006] To overcome the aforementioned defects in the prior art, the present invention provides a thin film deposition system for eliminating wafer bending, enabling the wafer to maintain a stable physical morphology during the bonding process, thereby improving the manufacturing precision and yield of the product.

[0007] Specifically, the thin film deposition system provided according to a first aspect of the present invention includes: a first gas source for providing a first gas for forming a stress thin film; a first gas conduit having a first end connected to the first gas source and a second end aligned with a first region and a second region on the back side of a wafer, wherein the first region and the second region are symmetrically distributed about a first radial direction about the wafer; and a second gas conduit having a first end connected to the first gas source and a second end aligned with a third region and a fourth region on the back side of the wafer, wherein the third region and the fourth region are symmetrically distributed about a second radial direction about the wafer.

[0008] Furthermore, in some embodiments of the present invention, the first gas source provides a first gas of a first component to the first region and the second region via the first gas pipeline to form a first stress film in the first region and the second region, and / or the first gas source provides a first gas of a second component to the third region and the fourth region via the second gas pipeline to form a second stress film in the third region and the fourth region.

[0009] Furthermore, in some embodiments of the present invention, the first stress film generates a first deformation ΔxBow1 in a first radial direction of the wafer and a second deformation ΔyBow1 in a second radial direction of the wafer; the second stress film generates a third deformation ΔxBow2 in the first radial direction of the wafer and a fourth deformation ΔyBow2 in the second radial direction of the wafer; wherein the vector sum of the first deformation ΔxBow1, the third deformation ΔxBow2, and the first warping deformation of the wafer in its first radial direction is equal to 0; and the vector sum of the second deformation ΔyBow1, the fourth deformation ΔyBow2, and the second warping deformation of the wafer in its second radial direction is equal to 0.

[0010] Furthermore, in some embodiments of the present invention, the first gas source is composed of a silane source unit, an ammonia source unit, and a carrier gas source unit, and the thin film deposition system further includes a radio frequency module and a vacuum module, used to cooperate with the first gas source to form the first stress film and / or the second stress film.

[0011] Furthermore, in some embodiments of the present invention, at least one of the first stress film and the second stress film is a tensile stress film, and its formation conditions are as follows: silane flow rate between 50 sccm and 200 sccm, ammonia flow rate between 100 sccm and 500 sccm, carrier gas flow rate between 1000 sccm and 30000 sccm, radio frequency electric field frequency of 13.56 MHz or 27 MHz, radio frequency power of 100 W to 500 W, reaction chamber pressure of 2 torr to 4 torr, and film thickness of [missing information].

[0012] Furthermore, in some embodiments of the present invention, at least one of the first stress film and the second stress film is a compressive stress film, and its formation conditions are as follows: silane flow rate between 50 sccm and 200 sccm, ammonia flow rate between 100 sccm and 800 sccm, carrier gas flow rate between 1000 sccm and 30000 sccm, radio frequency electric field frequency of 13.56 MHz or 27 MHz, radio frequency power of 800 W to 1500 W, reaction chamber pressure of 1.5 torr to 4 torr, and film thickness of [missing information].

[0013] Furthermore, in some embodiments of the present invention, the silane flow rate, ammonia flow rate, and carrier gas flow rate provided by the first gas source to each of the regions are proportional to the area of ​​the corresponding region.

[0014] Furthermore, in some embodiments of the present invention, a switching valve is provided between the first gas pipeline and the second gas pipeline. The thin film deposition system first connects the silane source unit, the reducing gas source unit, and the oxidizing gas source unit of the first gas source to the first gas pipeline via the switching valve, and connects the carrier gas source unit of the first gas source to the second gas pipeline to form the first stress film in the first region and the second region. Then, the silane source unit, the reducing gas source unit, and the oxidizing gas source unit of the first gas source are switched to the second gas pipeline, and the carrier gas source unit of the first gas source is switched to the first gas pipeline to form the second stress film in the third region and the fourth region.

[0015] Furthermore, in some embodiments of the present invention, the first radial direction is perpendicular to the second radial direction, wherein the first region and the second region are symmetrical about the second radial direction, the third region and the fourth region are symmetrical about the first radial direction, and / or the first region, the second region, the third region and the fourth region are centrally symmetrical.

[0016] Furthermore, in some embodiments of the present invention, the first region and the second region respectively have a first boundary and a second boundary located on both sides of the second radial direction, and the vertical distance from the center of the wafer to the first boundary and the second boundary is 1 / 4 to 1 / 2 of the radius of the wafer; and / or the third region and the fourth region respectively have a third boundary and a fourth boundary located on both sides of the first radial direction, and the vertical distance from the center of the wafer to the third boundary and the fourth boundary is 1 / 4 to 1 / 2 of the radius of the wafer.

[0017] Furthermore, in some embodiments of the present invention, the thin film deposition system further includes: a second gas source for providing a second gas for forming a stress film; and a third gas conduit, the first end of which is connected to the second gas source, and the second end of which is aligned with a plurality of fifth regions on the back side of the wafer to deposit a third stress film thereon, wherein the plurality of fifth regions are respectively located between the first region and the third region, between the first region and the fourth region, between the second region and the third region, and between the second region and the fourth region.

[0018] Furthermore, in some embodiments of the present invention, the thin film deposition system connects the first gas source to both the first gas pipeline and the second gas pipeline, and connects the second gas source to the third gas pipeline, so as to simultaneously form an annular first combined stress film in the first region, the second region, the third region, the fourth region and the plurality of fifth regions.

[0019] Furthermore, in some embodiments of the present invention, the thin film deposition system further includes: a third gas source for providing a third gas for forming a stress film; and a fourth gas conduit, the first end of which is connected to the gas source and the second end of which is aligned with a sixth region on the back side of the wafer to deposit a fourth stress film thereon, wherein the sixth region is located at the center of the back side of the wafer and is located between the first region, the second region, the third region and the fourth region.

[0020] Furthermore, in some embodiments of the present invention, the thin film deposition system connects the first gas source to the first gas pipeline and simultaneously connects the third gas source to the fourth gas pipeline to simultaneously form a second combined stress film perpendicular to the first radial direction in the first region, the second region, and the sixth region, wherein the second combined stress film is composed of the first stress film and the fourth stress film; and / or the thin film deposition system connects the first gas source to the second gas pipeline and simultaneously connects the third gas source to the fourth gas pipeline to simultaneously form a third combined stress film perpendicular to the second radial direction in the third region, the fourth region, and the sixth region, wherein the third combined stress film is composed of the second stress film and the fourth stress film; and / or the thin film deposition system connects the first gas source to both the first gas pipeline and the second gas pipeline, and connects the second gas source to the third gas pipeline and simultaneously connects the third gas source to the fourth gas pipeline to simultaneously form a fourth combined stress film in all regions on the back side of the wafer, wherein the fourth combined stress film is composed of the first stress film, the second stress film, the third stress film, and the fourth stress film.

[0021] Furthermore, in some embodiments of the present invention, the thin film deposition system further includes: a reaction chamber for accommodating the wafer and performing a back-side thin film deposition process on it, wherein the thin film deposition system also connects the first gas source to the first gas pipeline and the second gas pipeline simultaneously, connects the second gas source to the third gas pipeline, and connects the third gas source to the fourth gas pipeline before the wafer enters the reaction chamber, so as to form a pre-film in the reaction chamber.

[0022] Furthermore, in some embodiments of the present invention, the pre-film includes a silicon oxide film and / or a silicon oxynitride film, and the first gas source is composed of a silane source unit, a nitrous oxide source unit, and a carrier gas source unit. The formation conditions for the silicon oxide film are: silane flow rate between 50 sccm and 1000 sccm, nitrous oxide flow rate between 500 sccm and 25000 sccm, and carrier gas flow rate between 0 sccm and 30000 sccm. The formation conditions for the silicon oxynitride film are: silane flow rate between 50 sccm and 1000 sccm, nitrous oxide flow rate between 50 sccm and 5000 sccm, and carrier gas flow rate between 0 sccm and 30000 sccm.

[0023] Furthermore, in some embodiments of the present invention, the pre-film includes a silicon nitride film, and the first gas source is composed of a silane source unit, an ammonia source unit, and a carrier gas source unit. The formation conditions of the silicon nitride film are as follows: the silane flow rate is between 50 sccm and 2000 sccm, the ammonia flow rate is between 50 sccm and 2000 sccm, and the carrier gas flow rate is between 0 sccm and 30000 sccm.

[0024] Furthermore, in some embodiments of the present invention, the thickness of the pre-film is between Its formation conditions include: a first electric field with a frequency of 13.56MHz or 27MHz and a power of 100W to 1500W.

[0025] Furthermore, in some embodiments of the present invention, the formation conditions of the pre-film also include a second electric field with a frequency of 350kHz to 450kHz and a power of 0W to 500W. Attached Figure Description

[0026] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0027] Figure 1 shows a schematic diagram of various regions of a wafer provided according to some embodiments of the invention.

[0028] Figure 2 shows a schematic diagram of a gas pipeline provided according to some embodiments of the invention.

[0029] Figure 3 shows a schematic diagram of the principle of stress film warping correction according to some embodiments of the present invention.

[0030] Figure reference numerals: 11 First region; 12 Second region; 13 Third region; 14 Fourth region; 15 Fifth region; 16 Sixth region; 20 First gas source; 21 First gas pipeline; 22 Second gas pipeline; 30 Second gas source; 31 Third gas pipeline; 40 Third gas source.

[0031] 41 Fourth gas pipeline Detailed Implementation

[0032] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0033] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0034] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0035] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0036] As mentioned above, in modern semiconductor manufacturing processes, the design of client chips is becoming increasingly complex, especially in wafer-level manufacturing, where the physical layout and structural symmetry of the chip have a more and more significant impact on subsequent process steps. During the manufacturing process, wafers are prone to bending due to factors such as material stress and temperature changes, and this deformation may differ in the X and Y directions.

[0037] In critical wafer manufacturing processes, such as bonding, wafer alignment accuracy and bonding strength are crucial factors determining the performance of the final product. However, due to inconsistent wafer curvature in the X and Y directions, achieving high-precision alignment (e.g., less than 100nm) during bonding is difficult, thus affecting the accuracy and yield of subsequent process steps.

[0038] To overcome the aforementioned defects in the prior art, the present invention provides a thin film deposition system for eliminating wafer bending, enabling the wafer to maintain a stable physical morphology during the bonding process, thereby improving the manufacturing precision and yield of the product.

[0039] Please refer to Figures 1 and 2 for details. Figure 1 shows a schematic diagram of various regions of a wafer according to some embodiments of the invention. Figure 2 shows a schematic diagram of a gas pipeline according to some embodiments of the invention.

[0040] As shown in Figures 1 and 2, the thin film deposition system provided in the first aspect includes a first gas source 20, a first gas conduit 21, and a second gas conduit 22. The first gas source 20 provides a first gas for forming a stress thin film. The first gas conduit 21 has a first end connected to the first gas source 20, and its second end aligned with a first region 11 and a second region 12 on the back side of the wafer. The second gas conduit 22 has a first end connected to the first gas source 20, and its second end aligned with a third region 13 and a fourth region 14 on the back side of the wafer. Here, the first region 11 and the second region 12 are symmetrically distributed about a first radial direction of the wafer. The third region 13 and the fourth region 14 are symmetrically distributed about a second radial direction of the wafer.

[0041] Therefore, this thin film deposition system can eliminate wafer bending, enabling the wafer to maintain a stable physical morphology during bonding, thereby improving product manufacturing precision and yield. Furthermore, this thin film deposition system eliminates the need for transfer, alignment, 90° rotation, or other complex rotation designs, allowing the wafer to be bent in situ, reducing the demand for reactive gas and the time required for lifting, lowering, and preheating, thus improving deposition efficiency.

[0042] Furthermore, the first gas source 20 supplies a first gas of a first component to the first region 11 and the second region 12 via the first gas pipeline 21 to form a first stress film in the first region 11 and the second region 12. Correspondingly, the first gas source 20 supplies a first gas of a second component to the third region 13 and the fourth region 14 via the second gas pipeline 22 to form a second stress film in the third region 13 and the fourth region 14.

[0043] In some embodiments, the first gas source 20 is composed of a silane source unit, an ammonia source unit, and a carrier gas source unit. The thin film deposition system also includes a radio frequency module and a vacuum module, which are used to cooperate with the first gas source 20 to form a first stress film and / or a second stress film.

[0044] Furthermore, the flow rates of silane, ammonia, and carrier gas provided by the first gas source 20 to each region are proportional to the area of ​​the corresponding region.

[0045] In some embodiments, a switching valve is provided between the first gas line 21 and the second gas line 22. The thin film deposition system first connects the silane source unit, reducing gas source unit, and oxidizing gas source unit of the first gas source 20 to the first gas line 21 via the switching valve, and connects the carrier gas source unit of the first gas source 20 to the second gas line 22, to form a first stress film in the first region 11 and the second region 12. The thin film deposition system then switches the silane source unit, reducing gas source unit, and oxidizing gas source unit of the first gas source 20 to the second gas line 22, and switches the carrier gas source unit of the first gas source 20 back to the first gas line 21, to form a second stress film in the third region 13 and the fourth region 14.

[0046] In addition, the thin film deposition system also includes a second gas source 30 and a third gas conduit 31. The second gas source 30 may consist of a silane source unit, a reducing gas source unit, an oxidizing gas source unit, and a carrier gas source unit, and is used to provide a second gas for forming a stress film. The first end of the third gas conduit 31 is connected to the second gas source 30, and its second end is aligned with a plurality of fifth regions 15 on the back side of the wafer to deposit a third stress film thereon. The plurality of fifth regions 15 are respectively located between the first region 11 and the third region 13, between the first region 11 and the fourth region 14, between the second region 12 and the third region 13, and between the second region 12 and the fourth region 14.

[0047] Here, the thin film deposition system connects the first gas source 20 to the first gas line 21 and the second gas line 22 simultaneously, and connects the second gas source 30 to the third gas line 31, so as to simultaneously form an annular first combined stress film in the first region 11, the second region 12, the third region 13, the fourth region 14 and multiple fifth regions 15.

[0048] In addition, the thin film deposition system also includes a third gas source 40 and a fourth gas pipeline 41. The third gas source 40 consists of a silane source unit, a reducing gas source unit, an oxidizing gas source unit, and a carrier gas source unit, and is used to provide a third gas for forming a stress film. The first end of the fourth gas pipeline 41 is connected to the gas source, and its second end is aligned with the sixth region 16 on the back side of the wafer to deposit a fourth stress film thereon. Here, the sixth region 16 is located at the center of the back side of the wafer and is situated between the first region 11, the second region 12, the third region 13, and the fourth region 14.

[0049] Therefore, by using a combination of multiple zones and switching valves to control the airflow direction, the amount of mass flow meters and gas pipelines required can be reduced, thereby lowering equipment costs.

[0050] Please refer to Figure 3, which shows a schematic diagram of the principle of stress film warping correction according to some embodiments of the present invention.

[0051] As shown in Figure 3, the first stress film and the second stress film have opposite stress directions. The first stress film generates a first deformation ΔxBow1 in the first radial direction (e.g., the x direction) of the wafer and a second deformation ΔyBow1 in the second radial direction (e.g., the y direction) of the wafer. The second stress film generates a third deformation ΔxBow2 in the first radial direction of the wafer and a fourth deformation ΔyBow2 in the second radial direction of the wafer. The vector sum of the first deformation ΔxBow1, the third deformation ΔxBow2 and the first warping deformation of the wafer in its first radial direction is equal to 0, and the vector sum of the second deformation ΔyBow1, the fourth deformation ΔyBow2 and the second warping deformation of the wafer in its second radial direction is equal to 0.

[0052] Specifically, at least one of the first stress film and the second stress film is a tensile stress film, and its formation conditions are as follows: silane flow rate between 50 sccm and 200 sccm, ammonia flow rate between 100 sccm and 500 sccm, carrier gas flow rate between 1000 sccm and 30000 sccm, radio frequency electric field frequency of 13.56 MHz or 27 MHz, radio frequency power of 100 W to 500 W, reaction chamber pressure of 2 torr to 4 torr, and film thickness of [missing information].

[0053] Accordingly, at least one of the first stress film and the second stress film is a compressive stress film, and its formation conditions are as follows: silane flow rate between 50 sccm and 200 sccm, ammonia flow rate between 100 sccm and 800 sccm, carrier gas flow rate between 1000 sccm and 30000 sccm, radio frequency electric field frequency of 13.56 MHz or 27 MHz, radio frequency power of 800 W to 1500 W, reaction chamber pressure of 1.5 torr to 4 torr, and film thickness of [missing information].

[0054] Please continue to refer to Figures 1 and 2. The first radial direction is perpendicular to the second radial direction. The first region 11 and the second region 12 are symmetrical about the second radial direction, and the third region 13 and the fourth region 14 are symmetrical about the first radial direction.

[0055] In some embodiments, the first region 11, the second region 12, the third region 13, and the fourth region 14 are centrally symmetrical.

[0056] Furthermore, the first region 11 and the second region 12 each have a first boundary and a second boundary located on both sides of the second radial direction, and the perpendicular distance from the center of the wafer to the first boundary and the second boundary is 1 / 4 to 1 / 2 of the radius of the wafer. Correspondingly, the third region 13 and the fourth region 14 each have a third boundary and a fourth boundary located on both sides of the first radial direction, and the perpendicular distance from the center of the wafer to the third boundary and the fourth boundary is 1 / 4 to 1 / 2 of the radius of the wafer.

[0057] In some embodiments, the thin film deposition system connects a first gas source 20 to a first gas line 21 and a third gas source 40 to a fourth gas line 41 simultaneously, so as to form a second combined stress film perpendicular to the first radial direction in the first region 11, the second region 12, and the sixth region 16. Here, the second combined stress film consists of the first stress film and the fourth stress film.

[0058] In some embodiments, the thin film deposition system connects a first gas source 20 to a second gas line 22 while simultaneously connecting a third gas source 40 to a fourth gas line 41, so as to simultaneously form a third combined stress film perpendicular to the second radial direction in the third region 13, the fourth region 14, and the sixth region 16. Here, the third combined stress film is composed of the second stress film and the fourth stress film.

[0059] In some embodiments, the thin film deposition system simultaneously connects the first gas source 20 to the first gas line 21 and the second gas line 22, and the second gas source 30 to the third gas line 31, while simultaneously connecting the third gas source 40 to the fourth gas line 41, to simultaneously form a fourth combined stress film in all areas on the back side of the wafer. Here, the fourth combined stress film consists of the first stress film, the second stress film, the third stress film, and the fourth stress film.

[0060] In addition, the thin film deposition system also includes a reaction chamber for accommodating the wafer and performing back-side thin film deposition processes on it. Here, before the wafer enters the reaction chamber, the thin film deposition system simultaneously connects a first gas source 20 to a first gas line 21 and a second gas line 22, a second gas source 30 to a third gas line 31, and a third gas source 40 to a fourth gas line 41, to form a pre-film in the reaction chamber.

[0061] In some embodiments, the pre-film includes a silicon oxide film and / or a silicon oxynitride film. Here, the first gas source 20 comprises a silane source unit, a nitrous oxide source unit, and a carrier gas source unit. The formation conditions for the silicon oxide film are: silane flow rate between 50 sccm and 1000 sccm, nitrous oxide flow rate between 500 sccm and 25000 sccm, and carrier gas flow rate between 0 sccm and 30000 sccm. The formation conditions for the silicon oxynitride film are: silane flow rate between 50 sccm and 1000 sccm, nitrous oxide flow rate between 50 sccm and 5000 sccm, and carrier gas flow rate between 0 sccm and 30000 sccm.

[0062] In some embodiments, the pre-film includes a silicon nitride film, and the first gas source 20 consists of a silane source unit, an ammonia source unit, and a carrier gas source unit. Here, the formation conditions of the silicon nitride film are: silane flow rate between 50 sccm and 2000 sccm, ammonia flow rate between 50 sccm and 2000 sccm, and carrier gas flow rate between 0 sccm and 30000 sccm.

[0063] Furthermore, the thickness of the pre-film is between Its formation conditions include: a first electric field with a frequency of 13.56MHz or 27MHz and a power of 100W to 1500W.

[0064] Furthermore, the formation conditions of the pre-film also include a second electric field with a frequency of 350kHz to 450kHz and a power of 0 to 500W.

[0065] Here, the thin film deposition system forms a protective film within the reaction chamber by depositing a pre-film on the surface of the reaction chamber, thus shielding the interior of the reaction chamber from dust. This pre-film can be the same as or similar to the composition of the subsequent thin film deposition within the reaction chamber; for example, both can be silicon oxide, silicon nitride, or silicon oxynitride.

[0066] In summary, the thin film deposition system provided by this invention can be used to eliminate wafer bending, enabling the wafer to maintain a stable physical morphology during the bonding process, thereby improving the manufacturing precision and yield of the product.

[0067] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0068] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A thin film deposition system, characterized in that, include: The first gas source is used to provide the first gas for forming the stress film; A first gas conduit, having a first end connected to a first gas source and a second end aligned with a first region and a second region on the back side of the wafer, wherein the first region and the second region are symmetrically distributed about a first radial direction of the wafer; and The second gas pipeline has a first end connected to the first gas source, and a second end aligned with the third and fourth regions on the back side of the wafer, wherein the third and fourth regions are symmetrically distributed about the second radial direction of the wafer.

2. The thin film deposition system as described in claim 1, characterized in that, The first gas source, via the first gas pipeline, supplies a first gas of a first component to the first region and the second region to form a first stress film in the first region and the second region, and / or The first gas source supplies a first gas of a second component to the third region and the fourth region via the second gas pipeline to form a second stress film in the third region and the fourth region.

3. The thin film deposition system as described in claim 2, characterized in that, The first stress film generates a first deformation ΔxBow1 in a first radial direction of the wafer and a second deformation ΔyBow1 in a second radial direction of the wafer. The second stress film generates a third deformation ΔxBow2 in the first radial direction of the wafer and a fourth deformation ΔyBow2 in the second radial direction of the wafer, wherein the vector sum of the first deformation ΔxBow1, the third deformation ΔxBow2 and the first warping deformation of the wafer in its first radial direction is equal to 0, and the vector sum of the second deformation ΔyBow1, the fourth deformation ΔyBow2 and the second warping deformation of the wafer in its second radial direction is equal to 0.

4. The thin film deposition system as described in claim 2, characterized in that, The first gas source consists of a silane source unit, an ammonia source unit, and a carrier gas source unit. The thin film deposition system further includes a radio frequency module and a vacuum module, which are used in conjunction with the first gas source to form the first stress film and / or the second stress film.

5. The thin film deposition system as described in claim 4, characterized in that, At least one of the first stress film and the second stress film is a tensile stress film, and its formation conditions are as follows: silane flow rate between 50 sccm and 200 sccm, ammonia flow rate between 100 sccm and 500 sccm, carrier gas flow rate between 1000 sccm and 30000 sccm, radio frequency electric field frequency of 13.56 MHz or 27 MHz, radio frequency power of 100 W to 500 W, reaction chamber pressure of 2 torr to 4 torr, and film thickness of [missing information].

6. The thin film deposition system as described in claim 4, characterized in that, At least one of the first stress film and the second stress film is a compressive stress film, and its formation conditions are as follows: silane flow rate between 50 sccm and 200 sccm, ammonia flow rate between 100 sccm and 800 sccm, carrier gas flow rate between 1000 sccm and 30000 sccm, radio frequency electric field frequency of 13.56 MHz or 27 MHz, radio frequency power of 800 W to 1500 W, reaction chamber pressure of 1.5 torr to 4 torr, and film thickness of [missing information].

7. The thin film deposition system as described in claim 5 or 6, characterized in that, The flow rates of silane, ammonia, and carrier gas provided by the first gas source to each of the aforementioned regions are proportional to the area of ​​the corresponding region.

8. The thin film deposition system as described in claim 4, characterized in that, A switching valve is provided between the first gas pipeline and the second gas pipeline, wherein, The thin film deposition system first connects the silane source unit, reducing gas source unit, and oxidizing gas source unit of the first gas source to the first gas pipeline via the switching valve, and connects the carrier gas source unit of the first gas source to the second gas pipeline to form the first stress film in the first region and the second region. Then, the silane source unit, reducing gas source unit, and oxidizing gas source unit of the first gas source are switched to the second gas pipeline, and the carrier gas source unit of the first gas source is switched to the first gas pipeline to form the second stress film in the third region and the fourth region.

9. The thin film deposition system as claimed in claim 1, characterized in that, The first radial direction is perpendicular to the second radial direction, wherein, The first region and the second region are respectively symmetrical about the second radial direction, and the third region and the fourth region are respectively symmetrical about the first radial direction, and / or The first region, the second region, the third region, and the fourth region are centrally symmetrical.

10. The thin film deposition system as claimed in claim 9, characterized in that, The first region and the second region each have a first boundary and a second boundary located on both sides of the second radial direction. The perpendicular distance from the center of the wafer to the first boundary and the second boundary is 1 / 4 to 1 / 2 of the radius of the wafer, and / or The third region and the fourth region have a third boundary and a fourth boundary located on both sides of the first radial direction, respectively. The vertical distance from the center of the wafer to the third boundary and the fourth boundary is 1 / 4 to 1 / 2 of the radius of the wafer.

11. The thin film deposition system as claimed in claim 1, characterized in that, Also includes: The second gas source is used to provide the second gas for forming the stress film; as well as A third gas pipeline has a first end connected to the second gas source and a second end aligned with a plurality of fifth regions on the back side of the wafer to deposit a third stress film thereon, wherein the plurality of fifth regions are respectively located between the first region and the third region, between the first region and the fourth region, between the second region and the third region, and between the second region and the fourth region.

12. The thin film deposition system as claimed in claim 11, characterized in that, The thin film deposition system connects the first gas source to both the first gas pipeline and the second gas pipeline, and connects the second gas source to the third gas pipeline, so as to simultaneously form an annular first combined stress film in the first region, the second region, the third region, the fourth region and the plurality of fifth regions.

13. The thin film deposition system as claimed in claim 11, characterized in that, Also includes: The third gas source is used to provide the third gas for forming the stress film; as well as A fourth gas line, the first end of which is connected to the gas source, and the second end of which is aligned with the sixth region on the back side of the wafer to deposit a fourth stress film thereon, wherein the sixth region is located at the center of the back side of the wafer and is located between the first region, the second region, the third region and the fourth region.

14. The thin film deposition system as claimed in claim 13, characterized in that, The thin film deposition system connects the first gas source to the first gas pipeline and simultaneously connects the third gas source to the fourth gas pipeline to simultaneously form a second combined stress film perpendicular to the first radial direction in the first region, the second region, and the sixth region. The second combined stress film is composed of the first stress film and the fourth stress film, and / or... The thin film deposition system connects the first gas source to the second gas pipeline and simultaneously connects the third gas source to the fourth gas pipeline to simultaneously form a third combined stress film perpendicular to the second radial direction in the third region, the fourth region, and the sixth region. The third combined stress film is composed of the second stress film and the fourth stress film, and / or The thin film deposition system simultaneously connects the first gas source to the first gas pipeline and the second gas pipeline, connects the second gas source to the third gas pipeline, and connects the third gas source to the fourth gas pipeline, so as to simultaneously form a fourth combined stress film in all areas on the back side of the wafer, wherein the fourth combined stress film is composed of the first stress film, the second stress film, the third stress film, and the fourth stress film.

15. The thin film deposition system as claimed in claim 13, characterized in that, Also includes: A reaction chamber is used to contain the wafer and perform a back-side thin film deposition process on it. The thin film deposition system also connects the first gas source to the first gas pipeline and the second gas pipeline simultaneously, connects the second gas source to the third gas pipeline, and connects the third gas source to the fourth gas pipeline before the wafer enters the reaction chamber, so as to form a pre-film in the reaction chamber.

16. The thin film deposition system as claimed in claim 15, characterized in that, The pre-film includes a silicon oxide film and / or a silicon oxynitride film, and the first gas source consists of a silane source unit, a nitrous oxide source unit, and a carrier gas source unit, wherein... The formation conditions for the silicon oxide thin film are as follows: silane flow rate between 50 sccm and 1000 sccm, nitrous oxide flow rate between 500 sccm and 25000 sccm, and carrier gas flow rate between 0 sccm and 30000 sccm. The conditions for forming the silicon oxynitride thin film are as follows: silane flow rate is between 50 sccm and 1000 sccm, nitrous oxide flow rate is between 50 sccm and 5000 sccm, and carrier gas flow rate is between 0 sccm and 30000 sccm.

17. The thin film deposition system as claimed in claim 15, characterized in that, The pre-film includes a silicon nitride film. The first gas source consists of a silane source unit, an ammonia source unit, and a carrier gas source unit. The formation conditions of the silicon nitride film are: silane flow rate between 50 sccm and 2000 sccm, ammonia flow rate between 50 sccm and 2000 sccm, and carrier gas flow rate between 0 sccm and 30000 sccm.

18. The thin film deposition system as described in claim 16 or 17, characterized in that, The thickness of the pre-film is between Its formation conditions include: a first electric field with a frequency of 13.56MHz or 27MHz and a power of 100W to 1500W.

19. The thin film deposition system as claimed in claim 18, characterized in that, The formation conditions of the pre-film also include a second electric field with a frequency of 350kHz to 450kHz and a power of 0W to 500W.

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