Electron-beam direct writing system and chip production system

Abstract

The present application relates to the technical field of electron-beam direct writing, and particularly relates to an electron-beam direct writing system and a chip production system. The electron-beam direct writing system comprises: a positioning module (10), which is configured to determine an alignment point on a surface to be processed; and a first multi-electron-beam direct writing module (20) and at least one second multi-electron-beam direct writing module (30), which are located in a target chamber, wherein the first multi-electron-beam direct writing module (20) is configured to generate a first multi-electron beam and write a preset pattern onto said surface by means of the first multi-electron beam and on the basis of the alignment point, and the second multi-electron-beam direct writing module (30) is configured to generate a second multi-electron beam after the first multi-electron-beam direct writing module has written the preset pattern onto said surface or during the process of the first multi-electron-beam direct writing module writing the preset pattern onto said surface, and repeatedly write the preset pattern onto said surface by means of the second multi-electron beam and on the basis of the alignment point, so as to complete a direct writing operation on said surface.

Description

Electron beam direct writing system and chip manufacturing system

[0001] Cross-references to related applications

[0002] This disclosure claims priority to Chinese patent application No. 2025103851704, filed on March 28, 2025, entitled "Electron Beam Direct Writing System and Chip Manufacturing System", the entire contents of which are incorporated herein by reference. Technical Field

[0003] This application relates to the field of electron beam direct writing technology, and more particularly to an electron beam direct writing system and a chip manufacturing system. Background Technology

[0004] Electron Beam Direct Writing (EBDW) is a technique that uses a high-energy electron beam to directly write patterns onto a resist, thereby achieving nanoscale fine patterning.

[0005] In related technologies, a single electron beam is generated using an electron source and controlled to directly engrave the desired pattern or structure on the photoresist surface. However, this technique has a slow engraving speed, and the high-energy electron beam in the excited state exhibits flickering, which can easily cause breaks in the lines and reduce the quality of the pattern writing.

[0006] Public content

[0007] This application aims to at least partially solve one of the technical problems in the related art. To this end, the first objective of this application is to propose an electron beam direct writing system that improves the writing speed by applying multiple electron beams, and at the same time improves the direct writing quality by repeatedly writing a preset pattern with at least one second multiple electron beam to compensate for writing defects caused by the flickering phenomenon of the first multiple electron beam.

[0008] The second objective of this application is to propose a chip manufacturing system.

[0009] To achieve the above objectives, a first aspect of this application proposes an electron beam direct writing system. The system includes: a positioning module for determining alignment points on a surface to be processed; a first multiple electron beam direct writing module and at least one second multiple electron beam direct writing module located within a target cavity; the first multiple electron beam direct writing module generates a first multiple electron beam and writes a preset pattern onto the surface to be processed based on the alignment points using the first multiple electron beam; the second multiple electron beam direct writing module generates a second multiple electron beam after or during the writing of the preset pattern onto the surface by the first multiple electron beam direct writing module, and repeatedly writes the preset pattern onto the surface to be processed based on the alignment points using the second multiple electron beam, thereby completing the direct writing operation on the surface to be processed.

[0010] According to the electron beam direct writing system of this application embodiment, the alignment point of the surface to be processed is determined by the positioning module. A first multiple electron beam direct writing module generates a first multiple electron beam and writes a preset pattern onto the surface to be processed based on the alignment point using the first multiple electron beam. After or during the writing of the preset pattern onto the surface by the first multiple electron beam direct writing module, a second multiple electron beam direct writing module generates a second multiple electron beam and repeatedly writes the preset pattern onto the surface to be processed based on the alignment point using the second multiple electron beam, thereby completing the direct writing operation on the surface to be processed. Thus, this system improves the writing speed through the application of multiple electron beams, and at the same time, through the repeated writing of at least one second multiple electron beam, corrects writing defects caused by the flickering phenomenon of the first multiple electron beam, ensuring writing quality.

[0011] In addition, the electron beam direct writing system according to the above embodiments of this application may also have the following additional technical features:

[0012] According to one embodiment of this application, the number of second multiple electron beam direct writing modules is one. The second multiple electron beam direct writing module is used to generate a second multiple electron beam during the process of the first multiple electron beam direct writing module writing a preset pattern to the surface to be processed, and to repeatedly write the preset pattern by following the writing path of the first multiple electron beam through the second multiple electron beam based on the alignment point.

[0013] According to one embodiment of this application, the positioning module is located inside the target cavity. The positioning module is used to generate a first electron beam and determine the alignment point of the surface to be processed based on the first electron beam.

[0014] According to one embodiment of this application, the number of second multiple electron beam direct writing modules is one. The second multiple electron beam direct writing module is used to generate a second multiple electron beam during the process of the first multiple electron beam direct writing module writing a preset pattern to the surface to be processed, and to repeatedly write the preset pattern by following the writing path of the first multiple electron beam through the second multiple electron beam based on the alignment point.

[0015] According to one embodiment of this application, the positioning module is located inside the target cavity. The positioning module is used to generate a first electron beam and determine the alignment point of the surface to be processed based on the first electron beam.

[0016] According to one embodiment of this application, determining the alignment point of a surface to be processed based on a first electron beam includes: traversing the surface to be processed by the first electron beam; receiving a first reflection signal from the surface to be processed to determine an identification mark based on the first reflection signal, wherein the first reflection signal is generated by the reflection of the first electron beam by the surface to be processed; and determining the alignment point of the surface to be processed based on the identification mark when the identification mark is determined to be a target mark.

[0017] According to one embodiment of this application, when there is only one target mark, the positioning module is used to use the identification mark as the alignment point of the surface to be processed when it is determined that the identification mark is the target mark; when there are multiple target marks, the positioning module is used to determine the alignment point of the surface to be processed based on the positions of the multiple identification marks according to a preset positioning rule when it is determined that the identification mark is the target mark.

[0018] According to one embodiment of this application, the electron beam direct writing system further includes a defect detection module, used to acquire the actual pattern of the surface to be processed, and to perform defect detection on the surface to be processed after the direct writing operation is completed based on the alignment point, the preset pattern and the actual pattern.

[0019] According to one embodiment of this application, a defect detection module is located inside the target cavity. The defect detection module is used to generate a second electron beam and traverse the surface to be processed after the direct writing operation is completed by the second electron beam. The actual pattern of the surface to be processed is determined based on the received second reflection signal, wherein the second reflection signal is generated by the reflection of the second electron beam by the surface to be processed after the direct writing operation is completed.

[0020] According to one embodiment of this application, defect detection is performed on the surface to be processed after a direct write operation based on alignment points, a preset graphic, and an actual graphic. The method includes: aligning the actual graphic with the preset graphic based on the alignment points, and comparing the actual graphic with the preset graphic after alignment; and determining that the surface to be processed after a direct write operation does not have a writing defect when the comparison result meets a preset condition.

[0021] According to one embodiment of this application, the defect detection module is further configured to determine that the surface to be processed after the direct write operation has a write defect when the comparison result does not meet the preset conditions, and to determine the defect type based on the comparison result.

[0022] To achieve the above objectives, a second aspect of this application provides a chip manufacturing system including the electron beam direct writing system described above.

[0023] According to the chip manufacturing system of the present application embodiment, based on the above-mentioned electron beam direct writing system, the writing speed is improved. At the same time, by repeatedly writing the preset pattern with at least one second multiple electron beam, the writing defects caused by the flickering phenomenon of the first multiple electron beam are corrected, thereby improving the direct writing quality and ensuring the chip production qualification rate and production efficiency.

[0024] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0025] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, wherein:

[0026] Figure 1 is a connection diagram of an electron beam direct writing system according to an embodiment of this application;

[0027] Figure 2 is a schematic diagram of the architecture of an electron beam direct writing system according to a specific embodiment of this application;

[0028] Figure 3 is a block diagram of a chip manufacturing system according to an embodiment of this application. Detailed Implementation

[0029] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this application, and should not be construed as limiting this application.

[0030] The electron beam direct writing system and chip manufacturing system proposed in this application are described below with reference to the accompanying drawings.

[0031] Electron beam direct writing technology generates a high-energy electron beam using an electron gun, which is then focused by a lens and directly exposed onto a photoresist to form the desired pattern. This technology offers extremely high resolution and flexibility, making it suitable for fields requiring high-precision pattern fabrication, such as semiconductor manufacturing and micro-electro-mechanical systems (MEMS) manufacturing.

[0032] However, the single electron beam direct writing scheme used in related technologies has a slow writing speed. In addition, due to the working principle, the electron beam will flicker, causing the lines to break. It is necessary to scan and check again after the electron beam is written, which prolongs the writing cycle and reduces the output capacity.

[0033] To address at least one of the aforementioned technical problems, this application proposes an electron beam direct writing system. This system first performs direct writing based on alignment points using a first multiple electron beam, and then repeatedly writes the preset pattern onto the surface to be processed using at least one second multiple electron beam based on the alignment points. This system improves the writing speed by utilizing multiple electron beams, and at the same time, the repeated writing of the preset pattern using at least one second multiple electron beam corrects writing defects caused by the flickering phenomenon of the first multiple electron beam, thus ensuring writing quality.

[0034] Figure 1 is a connection diagram of an electron beam direct writing system according to an embodiment of this application.

[0035] As shown in Figure 1, the electron beam direct writing system of this application embodiment includes: a positioning module 10, a first multiple electron beam direct writing module 20 located in the target cavity, and at least one second multiple electron beam direct writing module 30.

[0036] The positioning module 10 is used to determine the alignment points of the surface to be processed; the first multiple electron beam direct writing module 20 is used to generate the first multiple electron beam and write the preset pattern onto the surface to be processed based on the alignment points; the second multiple electron beam direct writing module 30 is used to generate the second multiple electron beam after or during the first multiple electron beam direct writing module has written the preset pattern onto the surface to be processed, and repeatedly write the preset pattern onto the surface to be processed based on the alignment points, so as to complete the direct writing operation on the surface to be processed.

[0037] Specifically, the alignment point is a preset position. During direct operation, the alignment point on the surface to be processed can serve as the origin position for the first multiple electron beam writing module 20 to write the preset pattern, and as the origin position for at least one second multiple electron beam module 30 to repeatedly write the preset pattern. This ensures that the preset pattern written by the first multiple electron beam direct writing module 20 and the preset pattern written by at least one second multiple electron beam direct writing module 30 are consistent, facilitating accurate writing. The alignment point can be the center coordinates of the surface to be processed, a pre-set mark position on the surface, or a protocol position of the first multiple electron beam writing module 20 and at least one second multiple electron beam writing module 30; there are no specific limitations. For example, the positioning module 10 can determine the alignment point by image acquisition or by identifying the mark position on the surface to be processed based on infrared detection; there are no specific limitations.

[0038] Since an electron beam needs to be formed in a high vacuum or ultra-high vacuum environment, the target cavity is a cavity with a high vacuum or ultra-high vacuum environment determined based on the electron beam generation conditions, so as to facilitate direct electron beam writing.

[0039] The first multiple electron beam direct writing module 20 and the second multiple electron beam direct writing module 30 are used to generate corresponding multiple electron beams. Specifically, a high-energy electron beam can be generated by an electron gun using thermal field emission or field emission. Then, an aperture array splits the single electron beam into thousands or even tens of thousands of independent electron beams. An electron beam blocking array controls the switching of each electron beam through electrodes to achieve precise exposure control. A focusing lens array focuses the split electron beams onto the surface to be processed. A projection lens array further adjusts the focus and position of the electron beams so that the high-energy electron beams can directly act on the surface to be processed, achieving direct writing. For example, if the surface to be processed is a photoresist surface, the chemical properties of the photoresist are changed through the interaction between electrons and photoresist molecules, thereby achieving pattern exposure and writing. Multiple electron beams significantly improve throughput and writing speed by exposing multiple electron beams simultaneously. In addition, the number of second multiple electron beam modules 30 can be selected according to actual needs and is not limited. They are used to re-describe the written pattern of the first multiple electron beam module 20, thereby correcting any missing points in the writing process of the first multiple electron beam module 20.

[0040] During the direct write operation, a first multiple electron beam is first generated by the first multiple electron beam direct write module 20 to write a preset pattern onto the surface to be processed based on the alignment points. It can be understood that the preset pattern includes line width, pattern style, etc. Then, at least one second multiple electron beam direct write module 20 repeatedly writes the preset pattern onto the surface to be processed based on the alignment points to supplement the etching of line breaks caused by the flickering phenomenon of the first multiple electron beam, thereby improving the writing quality.

[0041] Understandably, the second multiple electron beam direct writing module 20 can initiate repeated writing after the first multiple electron beam direct writing module 20 has finished writing, or it can initiate repeated writing during the writing process of the first multiple electron beam direct writing module 20, in order to accelerate the writing rate. Furthermore, the writing path of the second multiple electron beam can follow the writing path of the first multiple electron beam, or it can be planned independently, as long as the writing order of any region is first the first multiple electron beam, then the second multiple electron beam; there are no specific restrictions. Further, the second multiple electron beam can be the same as or different from the first multiple electron beam; for example, the beam diameter of the second multiple electron beam may be smaller than that of the first multiple electron beam.

[0042] This embodiment uses an electron beam as the light source, with a beam size of only a few nanometers (even as small as 1.6 nm). This allows for the writing of nanoscale patterns on the surface to be processed, and even fine structures below 10 nm, perfectly enabling the development and fabrication of large-area, high-precision nanodevices. Furthermore, the application of multiple electron beams improves writing efficiency. For example, multiple electron beams can be used to complete the writing of lines of a preset linewidth in one pass, or multiple electron beams can be grouped to complete the writing of different lines separately. Additionally, the repeated writing of the preset pattern by at least one second multiple electron beam can supplement and correct any defects in the writing by the first multiple electron beam, ensuring accurate writing of the preset pattern and improving writing quality.

[0043] In one embodiment of this application, the number of second multiple electron beam direct writing modules 30 is one. The second multiple electron beam direct writing module 30 is used to generate a second multiple electron beam during the process of the first multiple electron beam direct writing module 20 writing a preset pattern to the surface to be processed, and to repeatedly write the preset pattern by following the writing path of the first multiple electron beam through the second multiple electron beam based on the alignment point.

[0044] In other words, the second multiple electron beam direct writing module 30 is activated after the first multiple electron beam direct writing module 20 starts the direct writing operation. The second multiple electron beam follows the movement path of the first multiple electron beam to write, thereby shortening the writing cycle and improving the writing speed while ensuring writing quality.

[0045] Referring to Figure 2, in one embodiment of this application, the positioning module 10 is located inside the target cavity. The positioning module 10 is used to generate a first electron beam and determine the alignment point of the surface to be processed based on the first electron beam.

[0046] Specifically, the first electron beam is a single electron beam. The positioning module 10 can traverse the surface to be processed based on the single electron beam, thereby identifying and determining the alignment point based on the secondary electron signal emitted by the surface to be processed. The high resolution of the secondary electron signal enables the identification accuracy of the alignment point to reach the nanometer level, thereby achieving high-precision alignment and coverage measurement.

[0047] Meanwhile, since the target cavity is a high vacuum or ultra-high vacuum environment, the conditions for electron beam generation have been met. Therefore, the positioning module 10 is integrated into the target cavity to reduce application costs, avoid vacuum breaking and re-vacuuming processes, and improve work efficiency.

[0048] In one embodiment of this application, determining the alignment point of the surface to be processed based on the first electron beam includes: traversing the surface to be processed by the first electron beam; receiving a first reflection signal from the surface to be processed to determine an identification mark based on the first reflection signal, wherein the first reflection signal is generated by the reflection of the first electron beam by the surface to be processed; and determining the alignment point of the surface to be processed based on the identification mark when the identification mark is determined to be a target mark.

[0049] Specifically, the positioning module 10 emits a first electron beam via an electron gun. This first electron beam is accelerated under high voltage and then focused into a high-precision fine beam by a magnetic and electric lens system, collimated to point towards the surface to be processed. The first electron beam scans the surface via deflection coils and moves along a predetermined path. Alternatively, a vector-scanning mode can be used, where the first electron beam only stays in the area requiring exposure or measurement before moving to the next area.

[0050] When the first electron beam scans the surface to be processed, the surface will reflect the first electron beam to generate a first reflected signal, i.e., emit secondary electrons (SE). The first reflected signal can be used for high-resolution imaging to detect surface features.

[0051] Upon receiving the first reflected signal, the system identifies and analyzes the markings on the surface to be processed. If the identified marking is determined to be the target marking, the alignment points on the surface to be processed are determined based on the identified marking. For example, the alignment points on the surface to be processed can be marked by special geometric patterns pre-set on the surface, such as crosses, circles, or squares. These markings can be prepared using photolithography and deposition processes, such as covering a substrate with photoresist, exposing and developing it to form a predetermined pattern, and then depositing a metal material (such as Ti / Au, Ti / Pd, etc.) to enhance the secondary electron signal. These markings are used for precise positioning of the alignment points during subsequent electron beam scanning.

[0052] When the identified marker is a target marker, it is considered that the marker can be used to determine the alignment point of the surface to be processed for subsequent writing operations.

[0053] In one embodiment of this application, when there is only one target mark, the positioning module 10 is used to use the identification mark as the alignment point of the surface to be processed when the identification mark is determined to be the target mark; when there are multiple target marks, the positioning module 10 is used to determine the alignment point of the surface to be processed based on the positions of the multiple identification marks according to a preset positioning rule when the identification mark is determined to be the target mark.

[0054] Specifically, the alignment point can be determined based on a single target mark on the surface to be processed, or it can be determined based on multiple target marks on the surface to be processed. For example, when there is a single target mark on the surface to be processed, the location of the target mark is used as the alignment point of the surface to be processed upon identification of the target mark. When there are multiple target marks on the surface to be processed, the global position of the surface to be processed can be determined through multiple target marks, thereby determining the alignment point, so as to adjust the scanning path of the multiple electron beams to match the design pattern. The preset rule can be a preset graphic. Multiple identification marks are matched with the preset graphic to determine the graphic orientation, thus obtaining the alignment point.

[0055] In one embodiment of this application, the electron beam direct writing system further includes a defect detection module 40, which is used to acquire the actual pattern of the surface to be processed, and to perform defect detection on the surface to be processed after the direct writing operation is completed based on the alignment point, the preset pattern and the actual pattern.

[0056] In other words, to further ensure writing quality, after repeated writing is completed by the second multiple electron beam module 30, the defect detection module 40 inspects the surface to be processed to evaluate the writing quality. Specifically, this can be done by acquiring an image of the surface to be processed to obtain the actual pattern on the surface, and then comparing it with a preset pattern to determine whether there are writing defects. Writing defects may include breakpoints, inconsistent line widths, etc.

[0057] In one embodiment of this application, the defect detection module 40 is located inside the target cavity. The defect detection module 40 is used to generate a second electron beam and traverse the surface to be processed after the direct writing operation is completed by the second electron beam. The actual pattern of the surface to be processed is determined according to the received second reflection signal. The second reflection signal is generated by the reflection of the second electron beam by the surface to be processed after the direct writing operation is completed.

[0058] In other words, the second electron beam is a single electron beam. The defect detection module 40 traverses the surface to be processed using this single electron beam. When the second electron beam interacts with the surface, secondary electrons and backscattered electrons are generated. The secondary electrons have lower energy and mainly reflect the surface morphology of the sample, while the backscattered electrons have higher energy and can penetrate the sample surface, reflecting the internal structure. Thus, the defect detection module 40 can receive the second reflection signal from the surface to be processed based on the reflection of the second electron beam. The second reflection signal then determines the actual pattern of the surface to be processed, and the actual pattern is compared with a preset pattern to identify writing deviations and determine whether a writing defect exists.

[0059] This embodiment enables high-precision image acquisition through the second electron beam, thereby improving the accuracy of defect detection. At the same time, since the target cavity is a high vacuum or ultra-vacuum environment, the conditions for electron beam generation have been met. Therefore, the positioning module 10 is integrated into the target cavity, reducing application costs and minimizing the vacuum breaking and re-vacuuming processes, thus improving work efficiency.

[0060] In one embodiment of this application, defect detection is performed on the surface to be processed after the direct write operation is completed based on the alignment point, the preset graphic, and the actual graphic. This includes: aligning the actual graphic with the preset graphic according to the alignment point, and comparing the actual graphic with the preset graphic after alignment; and determining that the surface to be processed after the direct write operation does not have any writing defects when the comparison result meets the preset conditions.

[0061] Specifically, after determining the actual graphic based on the second reflection information, the actual graphic is first aligned with the preset graphic based on the alignment point, and then the information is compared to ensure the accuracy of defect detection.

[0062] The preset conditions can be set based on actual accuracy requirements, such as the actual graphic and the preset graphic being completely identical, or the deviation between the actual graphic and the preset graphic being less than the preset value. When the comparison result meets the preset conditions, it is considered that the actual graphic and the preset graphic are consistent, and the writing of the surface to be processed after the direct writing operation is qualified, with no writing defects; otherwise, it is considered that there are writing defects.

[0063] In one embodiment of this application, the defect detection module 40 is further configured to determine that the surface to be processed after the direct write operation has a write defect when the comparison result does not meet the preset conditions, and to determine the defect type based on the comparison result.

[0064] In other words, when a writing defect is detected on the surface to be processed, it is identified according to the defect type to facilitate targeted treatment. For example, in cases of insufficient line width or breakpoints, a repair machine can be used to repair the defect based on the defect detection information. If localized stains are detected, cleaning or acid stone cleaning actions are performed. Furthermore, if the defect type is determined to be caused by deviations in the direct writing operation, such as positional deviations or large-area missing patterns, the direct writing module is stopped to promptly monitor and repair the fault.

[0065] As a specific embodiment of this application, the structure of the electron beam direct writing system is shown in Figure 2, including a positioning module 10, a first multiple electron beam direct writing module 20, a second multiple electron beam direct writing module 30, and a defect detection module 40 located within a vacuum chamber. During operation, firstly, the surface to be processed is scanned by a first electron beam under high or ultra-high vacuum conditions to identify alignment points and confirm correct positioning. Then, the first multiple electron beam direct writing module 20 is activated to write a preset pattern using the first multiple electron beam, followed by the second multiple electron beam direct writing module 30. The defect detection module 40 then scans for defects using the second electron beam. If a defect is detected, it is relayed to another machine for repair. The entire process does not require rewriting; instead, a safety mechanism ensures quality. The following technical advantages are achieved:

[0066] 1. The double electron beam direct writing method can ensure that no write loss event will occur and can completely remove the exposed material by the electron beam, reducing the generation of defects.

[0067] 2. The positioning module 10 based on the first electron beam is located before the first multi-electron beam direct writing module 20 and the second multi-electron beam direct writing module 30 to ensure the quality of direct writing without any movement or tiling problems, effectively eliminating errors caused by mechanical moving parts.

[0068] 3. The defect detection module 40 based on the second electron beam can simultaneously ensure that there are no write defects during the direct writing process, and force the first multi-electron beam direct writing module 20 and the second multi-electron beam direct writing module 30 to stop working when a write failure occurs, so as to carry out further inspection.

[0069] 4. Improve direct write speed and enhance write quality.

[0070] In summary, the electron beam direct writing system according to the embodiments of this application determines the alignment points of the surface to be processed of the target unit through a positioning module. First, a first multiple electron beam is generated by a first multiple electron beam direct writing module, and a preset pattern is written to the surface to be processed based on the alignment points using the first multiple electron beam. Then, a second multiple electron beam direct writing module generates a second multiple electron beam, and the preset pattern is repeatedly written to the surface to be processed along the writing path of the first multiple electron beam using the second multiple electron beam, thereby completing the direct writing operation on the surface to be processed. Thus, this system improves the writing speed through the application of multiple electron beams, and simultaneously improves the direct writing quality by repeatedly writing the preset pattern using at least one second multiple electron beam to compensate for writing defects caused by the flickering phenomenon of the first multiple electron beam.

[0071] Corresponding to the above embodiments, this application also proposes a chip manufacturing system.

[0072] As shown in Figure 3, the chip manufacturing system 100 of this application embodiment includes the electron beam direct writing system 110 described above. In this case, the positioning module 10 is used to identify the origin or a specific position on the wafer as an alignment point.

[0073] According to the chip manufacturing system of the present application embodiment, based on the above-mentioned electron beam direct writing system, the writing speed is improved. At the same time, by repeatedly writing the preset pattern with at least one second multiple electron beam, the writing defects caused by the flickering phenomenon of the first multiple electron beam are corrected, thereby improving the direct writing quality and ensuring the chip production qualification rate and production efficiency.

[0074] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0075] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0076] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0077] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application.

Claims

1. An electron beam direct writing system, the system comprising: The positioning module is used to determine the alignment points of the surface to be processed; The system comprises a first multiple electron beam direct writing module and at least one second multiple electron beam direct writing module located within the target cavity. The first multiple electron beam direct writing module generates a first multiple electron beam and writes a preset pattern onto the surface to be processed using the first multiple electron beam based on the alignment points. The second multiple electron beam direct writing module generates a second multiple electron beam after or during the process of the first multiple electron beam direct writing module writing the preset pattern onto the surface to be processed, and repeatedly writes the preset pattern onto the surface to be processed using the second multiple electron beam based on the alignment points, thereby completing the direct writing operation on the surface to be processed.

2. The electron beam direct writing system according to claim 1, wherein, The second multiple electron beam direct writing module is one in number. The second multiple electron beam direct writing module is used to generate a second multiple electron beam during the process of the first multiple electron beam direct writing module writing the preset pattern to the surface to be processed, and to repeatedly write the preset pattern by following the writing path of the first multiple electron beam through the second multiple electron beam based on the alignment point.

3. The electron beam direct writing system according to claim 1 or 2, wherein, The positioning module is located inside the target cavity. The positioning module is used to generate a first electron beam and determine the alignment point of the surface to be processed based on the first electron beam.

4. The electron beam direct writing system according to claim 3, wherein, The step of determining the alignment points of the surface to be processed based on the first electron beam includes: The surface to be processed is traversed by the first electron beam; A first reflected signal from the surface to be processed is received to determine an identification mark based on the first reflected signal, wherein the first reflected signal is generated by the reflection of the first electron beam by the surface to be processed; When the identification mark is determined to be the target mark, the alignment point of the surface to be processed is determined based on the identification mark.

5. The electron beam direct writing system according to claim 4, wherein, When there is only one target marker, the positioning module is used to use the identification marker as the alignment point of the surface to be processed when it determines that the identification marker is the target marker; When there are multiple target markers, the positioning module is used to determine the alignment point of the surface to be processed based on the positions of the multiple identification markers according to a preset positioning rule when the identification marker is determined to be a target marker.

6. The electron beam direct writing system according to any one of claims 1-5, characterized in that, The system also includes: The defect detection module is used to acquire the actual graphic of the surface to be processed, and to perform defect detection on the surface to be processed after the direct writing operation is completed based on the alignment point, the preset graphic, and the actual graphic.

7. The electron beam direct writing system according to claim 6, wherein, The defect detection module is located inside the target cavity. The defect detection module is used to generate a second electron beam and traverse the surface to be processed after the direct writing operation is completed through the second electron beam. The actual pattern of the surface to be processed is determined based on the received second reflection signal, wherein the second reflection signal is generated by the reflection of the second electron beam by the surface to be processed after the direct writing operation is completed.

8. The electron beam direct writing system according to claim 6 or 7, wherein, The defect detection of the surface to be processed after the direct writing operation is performed based on the alignment points, the preset graphic, and the actual graphic includes: The actual graphic is aligned with the preset graphic according to the alignment point, and the actual graphic is compared with the preset graphic after alignment. When the comparison results meet the preset conditions, it is determined that the surface to be processed after the direct write operation has no writing defects.

9. The electron beam direct writing system according to claim 8, wherein, The defect detection module is also used for, If the comparison result does not meet the preset conditions, it is determined that the surface to be processed after completing the direct write operation has a writing defect, and the defect type is determined based on the comparison result.

10. A chip manufacturing system comprising an electron beam direct writing system according to any one of claims 1-9.

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