Method for buried interface passivation of perovskite thin film, and solar cell

Abstract

The present application provides a method for buried interface passivation of a vacuum-deposited perovskite thin film, and a solar cell. The method comprises the following steps: providing a solar cell substrate, preparing a hole transport layer on a surface of the solar cell substrate, preparing an SAM layer on the surface of the hole transport layer, preparing a buried layer on the surface of the SAM layer, and preparing a perovskite layer on the surface of the buried layer. In the method, an aminovaleric acid hydrohalide material is used on the surface of the SAM layer, and is prepared on the surface of the SAM layer by means of a soaking method or a vacuum deposition method, thereby effectively protecting the SAM layer and reducing damage; and the material can coordinate with Pb2+ to passivate grain boundary defects and lower the defect density, thereby improving the photoelectric conversion efficiency of a device.

Description

A method for buried passivation of perovskite thin films and solar cells

[0001] This application claims priority to Chinese Patent Application No. 2025103491696, filed on March 24, 2025, entitled "A Method for Buried Passivation of Perovskite Thin Film and Solar Cell", the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application belongs to the field of battery technology, and more specifically, relates to a method for preparing a passivation layer for a perovskite solar cell, as well as a single-junction perovskite solar cell and a crystalline silicon perovskite tandem solar cell prepared by the method. Background Technology

[0003] The statements herein are provided only as background information in connection with this application and do not necessarily constitute prior art.

[0004] In recent years, perovskite solar cells (PSCs) have attracted widespread attention in the optoelectronic field due to their unique physical and chemical properties. Perovskite materials possess advantages such as tunable bandgap, low defect state density, high light absorption coefficient, and long carrier diffusion length, making them ideal candidate materials for next-generation high-efficiency photovoltaic technologies. These properties not only endow perovskite solar cells with excellent photoelectric performance but also provide a solid foundation for their potential in practical applications. Since their first report in 2009, the photoelectric conversion efficiency (PCE) of perovskite solar cells has experienced rapid growth. As of 2024, the highest certified PCE has reached an astonishing 26.1%, a figure comparable to traditional crystalline silicon solar cells, and is expected to improve further in the future.

[0005] The structural design of perovskite solar cells has a crucial impact on their performance. Based on the arrangement of functional layers and the different charge transport mechanisms, common perovskite solar cells can be divided into two main structures: the nip structure and the pin structure. The nip structure generally consists of five parts from bottom to top: a transparent electrode, an electron transport layer, a perovskite layer, a hole transport layer, and a metal electrode. While the nip structure has high process maturity, its electron transport layer typically requires high-temperature annealing, which may limit the choice of substrate material and increase fabrication costs.

[0006] In comparison, the inverted structure is a relatively novel and more innovative device structure in perovskite solar cells. It generally consists of five parts from bottom to top: a transparent electrode, a hole transport layer, a perovskite layer, an electron transport layer, and a metal electrode. Perovskite solar cells have high energy level compatibility with crystalline silicon cells, making the fabrication of crystalline silicon / perovskite tandem solar cells very promising.

[0007] There are many common methods for preparing perovskite thin films. Among them, the two-step method has the following advantages over the one-step method: 1. Better uniformity and coverage: By preparing the lead halide layer and the organic cation salt layer stepwise, the two-step method allows for better control of the uniformity and coverage of each step; 2. Controllable film thickness: It can obtain perovskite thin films with controllable and uniform thickness; 3. No organic solvents are used, making it more environmentally friendly. In industrial applications, it prevents the inhomogeneity and incomplete coverage problems commonly found in the one-step method.

[0008] However, current two-step methods have certain limitations. Compared to one-step methods, the perovskite films prepared using this method exhibit lower photoelectric performance. In the fabrication of inverted perovskite solar cells, SAMs layers are commonly used to modify the hole transport layer, which can improve the adhesion of the perovskite precursor solution and passivate interface defects in the transport layer. However, in two-step perovskite films, the higher temperatures required for preparing the lead halide layer can easily cause irreversible damage to the SAM layer, reducing its modification capability. Furthermore, in the two-step perovskite film preparation, lead (Pb) residue can easily remain at the lower interface during the preparation of the second organic cation salt layer, reducing the quality of the perovskite film and consequently lowering the photoelectric conversion efficiency of the solar cell. Summary of the Invention

[0009] The purpose of this application is to provide a buried passivation vacuum deposition method for perovskite thin films, using aminovaleric acid hydrohalides, such as 5-aminovaleric acid, 5-aminovaleric acid hydroiodate, and 5-aminovaleric acid hydrobromide, to prepare a buried layer on the surface of SAMs layers via immersion or vacuum deposition, thereby effectively protecting the SAM layer and reducing damage in a two-step process, and enabling it to interact with Pb. 2+ Coordination passesivates grain boundary defects, reduces defect density, and thus improves the photoelectric conversion efficiency of the device.

[0010] To achieve the above objectives, the technical solution adopted in the embodiments of this application is as follows:

[0011] This invention provides a method for buried passivation vacuum deposition of perovskite thin films, comprising the steps of: providing a battery substrate, preparing a hole transport layer on the surface of the battery substrate, preparing a SAMs layer on the surface of the hole transport layer, preparing a buried layer on the surface of the SAMs layer by immersion or vacuum deposition, and preparing a perovskite layer on the surface of the buried layer.

[0012] In one embodiment, the buried substrate is composed of at least one material of 5-aminovaleric acid, 5-aminovaleric acid hydroiodate, and 5-aminovaleric acid hydrobromide.

[0013] Specifically, the preparation of the buried substrate by immersion includes: dissolving the buried substrate material in methanol solvent, heating and stirring to obtain a buried substrate solution, then immersing all the samples with the prepared SAMs layer in the obtained buried substrate solution for a certain period of time, and then removing the samples with tweezers and performing annealing treatment. The stirring and heating temperature is 0~80℃, the stirring time is 15~80min, the immersion time is 1~30min, the annealing temperature is 60~100℃, and the annealing time is 1~20min.

[0014] Specifically, the vacuum deposition method for preparing the buried substrate includes: placing the buried substrate material in a crucible, closing the chamber door of the vapor deposition machine, and after the vacuum level drops to the required value, slowly increasing the temperature to begin preparing the buried substrate. The buried substrate material is 0.5~3g, the vapor deposition temperature range is 100℃~200℃, and the vapor deposition vacuum level range is 3×10⁻⁶. -3 Pa ~ 1×10 -4 Pa, with a vapor deposition rate ranging from 0.05 Å / S to 3 Å / S.

[0015] In one embodiment, a hole transport layer is prepared on the surface of the battery substrate, and the hole transport layer is prepared by at least one of spin coating and magnetron sputtering.

[0016] Specifically, the hole transport layer is prepared by spin coating, which includes: uniformly coating the hole transport layer dispersion onto the surface of the substrate sample, with a spin coating speed of 1000~5000 rpm and a spin coating time of 10~100 s; after spin coating, annealing is performed at a temperature of 300~600℃ and an annealing time of 10~50 min.

[0017] Specifically, the hole transport layer can also be produced by magnetron sputtering. The substrate sample is placed sequentially on the magnetron sputtering substrate, the surface dust is blown away with a bulb syringe, the substrate sample is placed in the magnetron sputtering chamber, the program is started, and the substrate sample is taken out after the program ends.

[0018] In one embodiment, a SAMs layer is prepared on the surface of the hole transport layer, and the SAMs layer is prepared by at least one of spin coating and vacuum deposition.

[0019] Specifically, the SAMs layer is prepared by spin coating, including: dissolving the SAMs material in a solvent and stirring for 10-120 min at a temperature of 10-120°C; uniformly coating the solvent onto the surface of the hole transport layer at a spin coating speed of 1000-5000 rpm for 10-100 s; and performing an annealing operation at a temperature of 300-600°C for 10-50 min.

[0020] Specifically, the SAMs layer is prepared using a vacuum deposition method, including: placing the SAM layer material in a crucible and performing vapor deposition, with a vapor deposition vacuum degree ranging from 1×10⁻⁶. -4 ~3×10 -4 Pa, the evaporation temperature range is 100℃~250℃, the evaporation rate range is 0.1Å / S~2Å / S. After evaporation, the sample is taken out and annealed at a temperature of 80℃~150℃ for a time of 1min~45min.

[0021] In one embodiment, the preparation of the perovskite layer includes: weighing perovskite precursor materials, placing them in crucibles, and performing vapor deposition with a vacuum degree ranging from 1×10⁻⁶. -4 ~3×10 -4 Pa, the evaporation temperature range is 200℃~700℃, the evaporation rate range is 0.1Å / S~10Å / S, after the evaporation is completed, the sample is taken out and annealed at a temperature of 100℃~300℃ for a time of 1min~45min.

[0022] The perovskite precursor material includes at least one or more of lead iodide (PbI2), lead chloride (PbCl2), lead bromide (PbBr2), cesium iodide (CsI), cesium bromide (CsBr), cesium chloride (CsCl), rubidium iodide (RbI), rubidium bromide (RbBr), rubidium chloride (RbCl), guanidine iodide (GAI), guanidine bromide (GABr), and guanidine chloride (GACl).

[0023] In one embodiment, when the above-described perovskite thin film passivation method is applied to a perovskite single-junction solar cell, the cell substrate includes a glass substrate and a conductive substrate, wherein the conductive substrate is one of fluorine-doped tin oxide (FTO) and indium tin oxide (ITO).

[0024] In one embodiment, the perovskite single-junction solar cell structure, from bottom to top, comprises a cell substrate, a hole transport layer, a SAMs layer, a buried substrate, a perovskite layer, an electron transport layer, and an electrode layer. The cell substrate includes a glass substrate and a conductive substrate thereon.

[0025] In another embodiment, when the above-described perovskite thin film passivation method is applied to a perovskite-silicon tandem solar cell, the solar cell structure, from bottom to top, includes: a solar cell substrate, a hole transport layer, a SAMs layer, a buried substrate, a perovskite layer, an electron transport layer, a transparent electrode layer, a metal top electrode layer, and an anti-reflection layer. The solar cell substrate, from bottom to top, includes a silicon wafer substrate and a tunnel junction. The silicon wafer substrate includes, from bottom to top, a metal bottom electrode layer, a first transparent electrode layer, a P-type substrate doped layer, a substrate passivation layer, a silicon substrate, a substrate surface passivation layer, and an N-type substrate doped layer.

[0026] Specifically, the tunnel junction is prepared by at least one of atomic layer deposition, magnetron sputtering or wet chemical methods, and has a thickness of 1~500 nm.

[0027] In one embodiment, the perovskite thin film passivation method further includes forming an electron transport layer on the perovskite layer, wherein the electron transport layer is prepared by at least one of spin coating, spray coating or vacuum deposition, and has a thickness of 20 nm.

[0028] Specifically, the electron transport layer is coated using a spin coating method, in which the electron transport layer dispersion is uniformly coated on the surface of the perovskite layer, with a spin coating speed of 500~4000 rpm and a spin coating time of 10~80 s.

[0029] Specifically, the electron transport layer is prepared by spraying. The electron transport layer liquid is prepared and placed in the spraying box. The program is started, the spraying height is 1~20mm, the spraying speed is 0.1~3cm / s, and the substrate is removed after spraying is completed.

[0030] Specifically, the electron transport layer is deposited using a vacuum deposition method, in which the electron transport layer material is evaporated onto the surface of the perovskite layer, with a evaporation vacuum of 5×10⁻⁵ to 5×10⁻⁴ Pa, a evaporation temperature of 100 to 400 °C, and an evaporation rate of 0.05 to 1 Å / S.

[0031] In one embodiment, the perovskite thin film passivation method further includes preparing an electrode layer on the electron transport layer, wherein the electrode layer is prepared by vacuum deposition and has a thickness of 1~3000 nm;

[0032] Specifically, the electrode layer is obtained by vacuum deposition, where the prepared sample is placed on a mask for evaporation. The evaporation vacuum is 5×10-5~2×10-4 Pa, the evaporation temperature is 500~2000℃, and the evaporation rate is 0.1~5 Å / S.

[0033] The electrode layer can also be prepared by screen printing, where metal grid lines with a thickness of 0~3000 μm are prepared on the substrate sample prepared in the above steps.

[0034] In another embodiment, when applied to a perovskite-silicon tandem solar cell structure, the perovskite thin film passivation method includes sequentially forming a transparent electrode layer, a metal top electrode layer, and an antireflection layer on the electron transport layer.

[0035] Specifically, the transparent electrode layer is prepared by magnetron sputtering or vacuum deposition, and the film thickness is 0~500nm;

[0036] Specifically, the transparent electrode layer is produced by magnetron sputtering, in which transparent electrode material is sputtered onto the surface of the electron transport layer, with a controlled power of 30~200W.

[0037] Specifically, the transparent electrode layer is produced by vacuum deposition, in which transparent electrode material is evaporated onto the surface of the electron transport layer. The vacuum degree of the evaporation is 1×10-5~5×10-4 Pa, the evaporation temperature is 1000~2000℃, and the evaporation rate is 0.05~3 Å / S.

[0038] A metal top electrode layer is prepared on the transparent electrode layer. The metal electrode layer is prepared by vacuum deposition and has a thickness of 0~3000 nm.

[0039] Specifically, the preparation of the metal top electrode layer includes: placing the substrate sample prepared in the above steps on a mask for vapor deposition, with a vapor deposition vacuum of 5×10-5~2×10-4 Pa, a vapor deposition temperature of 500~2000℃, and an evaporation rate of 0.1~5 Å / S, to obtain the metal electrode layer.

[0040] The antireflection layer is prepared by magnetron sputtering or vacuum deposition, and has a thickness of 0~500nm.

[0041] Specifically, the antireflection layer is produced by magnetron sputtering, whereby the antireflection material is sputtered onto the surface of the metal electrode layer, with a controlled power of 30~200W.

[0042] Specifically, the antireflection layer is constructed using a vacuum deposition method, in which the antireflection material is evaporated onto the surface of the aforementioned metal electrode layer. The evaporation vacuum is 5×10⁻⁵ to 5×10⁻⁴ Pa, the evaporation temperature is 1000 to 2000 °C, and the evaporation rate is 0 to 5 Å / s.

[0043] The present invention also provides a perovskite solar cell prepared by the above method. In one embodiment, the perovskite single-junction solar cell structure from bottom to top consists of a cell substrate, a hole transport layer, a SAMs layer, a buried layer, a perovskite layer, an electron transport layer, and an electrode layer.

[0044] Specifically, the battery substrate is a combination of a glass substrate and a conductive substrate;

[0045] The conductive substrate is one of fluorine-doped tin oxide (FTO) and indium tin oxide (ITO);

[0046] The hole transport layer is nickel oxide (NiO). x Molybdenum disulfide (MoS2) and molybdenum oxide (MoO) x At least one of the components in );

[0047] The perovskite layer has an ABX3 structure, where A is an organic cation, including CH3NH4+. 3+ (MA + ), NH2CH=NH2 + (FA + ), cesium ions (Cs) + ), rubidium ions (Rb + ), potassium ions (K) + ) or sodium ions (Na + At least one of the following;

[0048] B represents a metal cation, including lead ions (Pb). 2+ ), tin ions (Sn) 2+ ), cadmium ions (Cd) 2+ ), calcium ions (Ca 2+ At least one of the following;

[0049] C represents a halide anion, including F. - Cl - ,Br - I - At least one of them;

[0050] The buried layer is composed of at least one of 5-aminovaleric acid, 5-aminovaleric acid hydroiodate, and 5-aminovaleric acid hydrobromide.

[0051] The electron transport layer is composed of zinc oxide (ZnO), tin dioxide (SnO2), titanium dioxide (TiO2), and [6,6]-phenyl C61-butyrate methyl ester (PC). 61 BM), C60 (C 60 At least one of the following;

[0052] The electrode layer is at least one of gold (Au), silver (Ag), and copper (Cu).

[0053] The present invention also provides a crystalline silicon perovskite tandem solar cell prepared by the above method, wherein the cell structure from bottom to top consists of a cell substrate, a hole transport layer, a SAMs layer, a buried layer, a perovskite layer, an electron transport layer, a transparent electrode layer, a metal top electrode layer, and an antireflection layer.

[0054] The battery substrate is composed of a silicon wafer substrate and a tunnel junction;

[0055] The silicon substrate comprises a metal bottom electrode layer, a first transparent electrode layer, a P-type substrate doped layer, a substrate passivation layer, a silicon substrate, a substrate surface passivation layer, and an N-type substrate doped layer;

[0056] In one embodiment, the tunnel junction is composed of at least one of transparent conductive oxide and polycrystalline silicon.

[0057] The hole transport layer is nickel oxide (NiO). x Molybdenum disulfide (MoS2) and molybdenum oxide (MoO) x At least one of the components in );

[0058] The perovskite layer has an ABX3 structure, where A is an organic cation, including CH3NH4+. 3+ (MA + ), NH2CH=NH 2+ (FA + ), cesium ions (Cs) + ), rubidium ions (Rb + ), potassium ions (K) + ) or sodium ions (Na + At least one of the following;

[0059] B represents a metal cation, including lead ions (Pb). 2+ ), tin ions (Sn) 2+ ), cadmium ions (Cd) 2+ ), calcium ions (Ca 2+ At least one of the following;

[0060] C represents a halide anion, including F. - Cl - ,Br - I - At least one of them;

[0061] The buried layer is composed of at least one of 5-aminovaleric acid, 5-aminovaleric acid hydroiodate, and 5-aminovaleric acid hydrobromide.

[0062] The electron transport layer is composed of zinc oxide (ZnO), tin dioxide (SnO2), titanium dioxide (TiO2), and [6,6]-phenyl C61-butyrate methyl ester (PC). 61 BM), C60 (C 60 At least one of the following;

[0063] The transparent electrode layer is made of at least one of indium tin oxide (ITO), indium zinc oxide (IZO), and aluminum zinc oxide (AZO).

[0064] The metal top electrode layer is composed of at least one of gold (Au), silver (Ag), and copper (Cu).

[0065] The antireflective layer is made of magnesium fluoride (MgF). x Lithium fluoride (LiF) x It is one of the components of ).

[0066] The method for fabricating perovskite solar cells provided in this application has at least the following beneficial effects:

[0067] This method prepares a buried substrate on the SAM layer. When preparing the perovskite layer using the two-step method, inorganic halide molecules such as lead iodide (PbI2) need to be deposited onto the SAM layer at high temperature, which causes partial decomposition or degradation of the SAM layer and reduces the uniformity of the SAM layer. This method can effectively protect the SAM layer from direct contact with high temperature and ensure the integrity and uniform coverage of the SAM layer.

[0068] This method prepares a buried substrate on a SAM layer, which increases the adhesion sites during the deposition of inorganic halide molecules. Furthermore, the carboxyl groups of the buried substrate material can interact with Pb. 2+ Coordination: The amino group can coordinate with a halogen atom, such as a bromide ion (Br). - This reduces interface defects in the perovskite layer and improves the photoelectric conversion efficiency of the device. Attached Figure Description

[0069] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or exemplary technologies will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0070] Figure 1 is a flowchart of an embodiment of the present invention;

[0071] Figure 2 is a schematic diagram of the single-junction perovskite solar cell structure provided in an embodiment of the present invention;

[0072] Figure 3 is a schematic diagram of the stacked perovskite solar cell structure provided in an embodiment of the present invention;

[0073] Figure 4 is a JV curve diagram of Embodiment 1 and Comparative Example 1 of the present invention.

[0074] S001, Hole transport layer; S002, SAMs layer; S020, Buried layer; S003, Perovskite layer; S004, Electron transport layer;

[0075] S051, Glass substrate; S052, Conductive substrate; S006, Electrode layer;

[0076] S0070, silicon substrate; S080, tunnel junction; S009, transparent electrode layer; S010, metal electrode layer; S011, antireflection layer. Detailed Implementation

[0077] To make the technical problems, technical solutions, and beneficial effects to be solved by this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and are not intended to limit the scope of this application.

[0078] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.

[0079] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise expressly specified. "Several" means one or more, unless otherwise expressly specified.

[0080] In the description of this application, it should be understood that the terms "center", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0081] Throughout this specification, reference to "an embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment is included in at least one embodiment of this application. Therefore, the phrase "in one embodiment" or "in some embodiments" appears in various places throughout the specification, and not all references are to the same embodiment. Furthermore, in one or more embodiments, particular features, structures, or characteristics may be combined in any suitable manner.

[0082] This invention provides a method for buried passivation vacuum deposition of perovskite thin films, comprising: providing a battery substrate; preparing a hole transport layer S001 on the surface of the battery substrate; preparing a SAMs layer S002 on the surface of the hole transport layer S001; preparing a buried layer S020 on the surface of the SAMs layer S002 using an immersion method or a vacuum deposition method; and preparing a perovskite layer S003 on the surface of the buried layer S020 using a two-step method. The buried layer material is composed of at least one of 5-aminovaleric acid, 5-aminovaleric acid hydroiodate, and 5-aminovaleric acid hydrobromide.

[0083] In one embodiment, 5-aminovaleric acid can effectively protect the SAMs layer from direct contact with high temperatures, ensuring the integrity and uniform coverage of the SAMs layer.

[0084] In one embodiment, an appropriate amount of the embedded SO20 material is weighed and placed in a crucible, ensuring the crucible is clean and free of impurities. The crucible is then placed in a vapor deposition machine, and the temperature is slowly increased to 150°C for vapor deposition, with a vacuum degree of 3×10⁻⁶. -3 Pa, with a evaporation rate in the range of 0.1 Å / S, forms a buried substrate on the surface of the SAMs layer.

[0085] Please refer to Figure 1. An embodiment of the present invention provides a perovskite solar cell, including a glass substrate S051, a conductive substrate S052, a hole transport layer S001, a SAMs layer S002, a buried layer S020, a perovskite layer S003, an electron transport layer S004, and an electrode layer S006.

[0086] The fabrication steps of the perovskite solar cell are as follows: a conductive substrate S052 is provided; a hole transport layer S001 is fabricated on the surface of the conductive substrate S052; a SAMs layer S002 is fabricated on the surface of the hole transport layer S001; a buried layer S020 is fabricated on the surface of the SAMs layer S002; a perovskite layer S003 is fabricated on the surface of the buried layer S020; an electron transport layer S004 is fabricated on the surface of the perovskite layer S003; and an electrode layer S006 is fabricated on the surface of the electron transport layer S003.

[0087] The specific fabrication steps of this perovskite solar cell are as follows:

[0088] S11: Provide a conductive substrate S052 and clean it by cleaning with ethanol, methanol and acetone for 15 min respectively, drying for 30 min, and then performing ultraviolet treatment for 10 min.

[0089] S12: A hole transport layer S001 is prepared on the surface of the conductive substrate S052;

[0090] Preferably, the hole transport layer S001 is applied by spin coating, in which the hole transport layer dispersion is uniformly coated on the surface of the conductive substrate. The spin coating speed is 1000~5000 rpm and the spin coating time is 10~100s. After spin coating, an annealing operation is performed at a temperature of 300~600℃ for 10~50 min.

[0091] Preferably, the hole transport layer S001 is constructed using magnetron sputtering. The conductive substrate S052 is placed sequentially on the magnetron sputtering substrate, the surface dust is blown away with a syringe, the magnetron sputtering substrate is placed in the magnetron sputtering chamber, the program is started, and the substrate is removed after the program ends.

[0092] S13: Prepare a SAMs layer S002 on the hole transport layer S001.

[0093] Preferably, the SAMs layer SO02 is prepared by spin coating. The SAMs material is dissolved in a solvent and stirred for a certain period of time. The solvent is then uniformly coated onto the surface of the hole transport layer. The spin coating speed is 1000~5000 rpm and the spin coating time is 10~100s. After spin coating, an annealing operation is performed. The annealing temperature is 300~600℃ and the annealing time is 10~50 min.

[0094] Preferably, the SAMs layer SO02 is deposited using a vacuum deposition method, in which the SAM layer material is placed in a crucible and vapor-deposited, with a vapor deposition vacuum degree ranging from 1×10⁻⁶. -4 ~3×10 -4 The evaporation temperature range is 100℃~250℃, and the evaporation rate ranges from 0.1Å / S to 2Å / S. After evaporation, the sample is removed and annealed at a temperature of 80℃~150℃ for a time of 0 min~45 min.

[0095] S14: Prepare a buried substrate SO20 on the surface of the SAMs layer SO02;

[0096] Preferably, the buried layer SO20 uses an immersion method, in which an appropriate amount of aminovaleric acid hydrogen halide material is weighed and placed in a beaker, dissolved in a solvent, and stirred with a stirrer for a certain period of time. Then, the prepared SAMs layer sample is placed on a sample holder in the beaker and left for a certain period of time. Subsequently, the sample is removed with tweezers and annealed. The solvent is methanol, the stirring and heating temperature is 0~80℃, the stirring time is 15~80 min, and the sample placement time is 1~30 min. The annealing temperature is 60~100℃, and the annealing time is 1~20 min.

[0097] Preferably, the buried SO20 substrate is prepared using a vacuum deposition method. An appropriate amount of aminovaleric acid hydrogen halide material is weighed using a balance and placed in a crucible. The chamber door of the vapor deposition machine is closed, and after the vacuum level drops to the required value, the temperature is slowly increased to begin preparing the buried SO20 substrate. The material weighing amount is 0.5~3g, the vapor deposition temperature range is 100℃~200℃, and the vapor deposition vacuum level range is 3×10⁻⁶. -3 Pa ~ 1×10 -4 Pa, with a vapor deposition rate ranging from 0.05 Å / S to 3 Å / S.

[0098] S15: A perovskite layer S003 is prepared on the surface of the buried substrate S020. The perovskite layer S003 is prepared by vacuum deposition and has a thickness of 0~1500nm.

[0099] Specifically, the perovskite layer S003 is deposited using a vacuum deposition method. An appropriate amount of perovskite precursor material is weighed and placed in a crucible for vapor deposition. The vacuum degree of the vapor deposition is within the range of 1×10⁻⁶. -4 ~3×10 -4 Pa, the evaporation temperature range is 200℃-700℃, the evaporation rate range is 0.1Å / S~10Å / S, after the evaporation is completed, the sample is taken out and annealed at a temperature of 100℃~300℃ for a time of 0min-45min.

[0100] S16: An electron transport layer S004 is prepared on the surface of the perovskite layer S003. The electron transport layer S004 is prepared by at least one of spin coating, spray coating or vacuum deposition, and has a thickness of 20 nm.

[0101] Specifically, the electron transport layer S004 is coated by spin coating, in which the electron transport layer dispersion is uniformly coated on the surface of the perovskite layer, with a spin coating speed of 500~4000 rpm and a spin coating time of 10~80 s.

[0102] Specifically, the electron transport layer S004 is prepared by spraying. The electron transport layer liquid is prepared and placed in the spraying box. The program is started, the spraying height is 1~20mm, the spraying speed is 0.1~3cm / s, and the substrate is removed after spraying is completed.

[0103] Specifically, the electron transport layer S004 is deposited using a vacuum deposition method, in which the electron transport layer material is evaporated onto the surface of the perovskite layer S003, with a deposition vacuum degree of 5 × 10⁻⁶. -5 ~5×10 -4 Pa, evaporation temperature is 100~400℃, evaporation rate is 0.05~1 Å / S;

[0104] S17: An electrode layer S006 is prepared on the electron transport layer S004. The electrode layer S006 is prepared by vacuum deposition and has a thickness of 0~3000 nm.

[0105] Specifically, the electrode layer S006 is deposited using a vacuum deposition method. The substrate sample prepared in step S16 is placed on a mask for vapor deposition, and the vapor deposition vacuum degree is 5×10⁻⁶. -5 ~2×10 -4 Pa, the evaporation temperature is 500~2000℃, the evaporation rate is 0.1~5 Å / S, and the electrode layer S006 is obtained;

[0106] The electrode layer can also be prepared by screen printing, with a metal grid line thickness of 0~3000 μm on the sample prepared in step S16.

[0107] Referring to Figure 2, this embodiment of the invention also provides a crystalline silicon perovskite tandem solar cell, including...

[0108] Silicon substrate S070, tunnel junction S080, hole transport layer S001, SAMs layer S002, buried layer S020, perovskite layer S003, electron transport layer S004, transparent electrode layer S090, metal top electrode layer S091, antireflection layer S092.

[0109] The method for fabricating the crystalline silicon perovskite tandem solar cell is as follows: a silicon substrate S070 is provided; a tunneling junction S080 is fabricated on the surface of the silicon substrate S070; a hole transport layer S001 is fabricated on the surface of the tunneling junction S080; a SAMs layer S002 is fabricated on the surface of the hole transport layer S001; a buried layer S020 is fabricated on the surface of the SAMs layer S002; a perovskite layer S003 is fabricated on the surface of the buried layer S020; an electron transport layer S004 is fabricated on the surface of the perovskite layer S003; a transparent electrode layer S090 is fabricated on the surface of the electron transport layer S004; a metal top electrode layer S091 is fabricated on the surface of the transparent electrode layer S090; and an anti-reflection layer S092 is fabricated on the surface of the metal top electrode layer S091.

[0110] The specific preparation steps are as follows:

[0111] S21: A silicon substrate S070 is provided, wherein the silicon substrate S070 is composed of a metal bottom electrode layer S071, a first transparent electrode layer S072, a P-type substrate doped layer S073, a substrate passivation layer S074, a silicon substrate S075, a substrate surface passivation layer S076, and an N-type substrate doped layer S077.

[0112] S22: A tunnel junction S080 is prepared on the surface of a silicon substrate S070 by atomic layer deposition, magnetron sputtering or wet chemical method, with a thickness of 0~500nm.

[0113] S23: A hole transport layer S001 with a thickness of 0~500nm is prepared on the surface of the tunnel junction S080;

[0114] Preferably, the hole transport layer S001 is coated by spin coating, in which the hole transport layer dispersion is uniformly coated on the surface of the tunnel junction 32, the spin coating speed is 1000~5000 rpm, and the spin coating time is 10~100s; after spin coating, annealing is performed, the annealing temperature is 300~600℃, and the annealing time is 10~50 min.

[0115] S24: Prepare a SAMs layer S002 on the hole transport layer S001.

[0116] Preferably, the SAMs layer SO02 is prepared by spin coating. The SAMs material is dissolved in a solvent and stirred for a certain period of time. The solvent is then uniformly coated onto the surface of the hole transport layer. The spin coating speed is 1000~5000 rpm and the spin coating time is 10~100s. After spin coating, an annealing operation is performed. The annealing temperature is 300~600℃ and the annealing time is 10~50 min.

[0117] Preferably, the SAMs layer SO02 is deposited using a vacuum deposition method, in which the SAM layer material is placed in a crucible and vapor-deposited, with a vapor deposition vacuum degree ranging from 1×10⁻⁶. -4 ~3×10 -4 The evaporation temperature range is 100℃~250℃, and the evaporation rate ranges from 0.1Å / S to 2Å / S. After evaporation, the sample is removed and annealed at a temperature of 80℃~150℃ for a time of 0 min~45 min.

[0118] S25: Prepare a buried substrate SO20 on the surface of the SAMs layer SO02;

[0119] Preferably, the buried layer SO20 uses an immersion method, in which an appropriate amount of aminovaleric acid hydrogen halide material is weighed and placed in a beaker, dissolved in a solvent, and stirred with a stirrer for a certain period of time. Then, the prepared SAMs layer sample is placed on a sample holder in the beaker and left for a certain period of time. Subsequently, the sample is removed with tweezers and annealed. The solvent is methanol, the stirring and heating temperature is 0~80℃, the stirring time is 15~80 min, and the sample placement time is 1~30 min. The annealing temperature is 60~100℃, and the annealing time is 1~20 min.

[0120] Preferably, the buried substrate S020 employs a vacuum deposition method. An appropriate amount of aminovaleric acid hydrogen halide material is weighed using a balance and placed in a crucible. The chamber door of the vapor deposition machine is closed, and after the vacuum level drops to the required value, the temperature is slowly increased to begin preparing the buried substrate. The material weighing amount is 0.5~3g, the vapor deposition temperature range is 100℃~200℃, and the vapor deposition vacuum level range is 3×10⁻⁶. -3 Pa ~ 1×10 -4 Pa, with a vapor deposition rate ranging from 0.05 Å / S to 3 Å / S.

[0121] S26: A perovskite layer S003 is prepared on the surface of the buried substrate S020. The perovskite layer S003 is prepared by vacuum deposition and has a thickness of 0~1500nm.

[0122] Specifically, the perovskite layer S003 is deposited using a vacuum deposition method. An appropriate amount of perovskite precursor material is weighed and placed in a crucible for vapor deposition. The vacuum degree of the vapor deposition is within the range of 1×10⁻⁶. -4 ~3×10 -4 Pa, the evaporation temperature range is 200℃-700℃, the evaporation rate range is 0.1Å / S~10Å / S, after the evaporation is completed, the sample is taken out and annealed at a temperature of 100℃~300℃ for a time of 0min-45min.

[0123] S27: An electron transport layer S004 is prepared on the surface of the perovskite layer S003. The electron transport layer S004 is prepared by at least one of spin coating, spray coating or vacuum deposition, and has a thickness of 20 nm.

[0124] Specifically, the electron transport layer S004 is coated by spin coating, in which the electron transport layer dispersion is uniformly coated on the surface of the perovskite layer, with a spin coating speed of 500~4000 rpm and a spin coating time of 10~80 s.

[0125] Specifically, the electron transport layer S004 is prepared by spraying. The electron transport layer liquid is prepared and placed in the spraying box. The program is started, the spraying height is 1~20mm, the spraying speed is 0.1~3cm / s, and the substrate is removed after spraying is completed.

[0126] Specifically, the electron transport layer S004 is deposited using a vacuum deposition method, in which the electron transport layer material is evaporated onto the surface of the perovskite layer S003, with a deposition vacuum degree of 5 × 10⁻⁶. -5 ~5×10 -4 Pa, evaporation temperature is 100~400℃, evaporation rate is 0.05~1 Å / S;

[0127] S28: A transparent electrode layer S090 is prepared on the surface of the electron transport layer S004. The transparent electrode layer S090 is prepared by magnetron sputtering or vacuum deposition and the thickness of the layer is 0~500nm.

[0128] Specifically, the transparent electrode layer S090 uses magnetron sputtering to sputter transparent electrode material onto the surface of the electron transport layer, with a controlled power of 30~200W;

[0129] Specifically, the transparent electrode layer S090 is constructed using a vacuum deposition method, in which transparent electrode material is evaporated onto the surface of the electron transport layer S004. The evaporation vacuum is 1×10⁻⁵ to 5×10⁻⁴ Pa, the evaporation temperature is 1000 to 2000 °C, and the evaporation rate is 0.05 to 3 Å / S.

[0130] S29: A metal top electrode layer S091 is prepared on the transparent electrode layer S090. The metal electrode layer 34 is prepared by vacuum deposition and has a thickness of 0~3000 nm.

[0131] Specifically, the metal top electrode layer S091 is deposited using a vacuum deposition method. The substrate sample prepared in the above steps is placed on a mask for vapor deposition, and the vapor deposition vacuum degree is 5×10⁻⁶. -5 ~2×10 -4 Pa, the evaporation temperature is 500~2000℃, the evaporation rate is 0.1~5 Å / S, to obtain the metal electrode layer 34;

[0132] S30: An anti-reflection layer S092 is prepared on the metal top electrode layer S091. The anti-reflection layer S092 is prepared by magnetron sputtering or vacuum deposition and has a thickness of 0~500nm.

[0133] Specifically, the antireflection layer S092 is constructed using magnetron sputtering, whereby the antireflection material is sputtered onto the surface of the metal top electrode layer S091, with a controlled power of 30~200W.

[0134] Specifically, the antireflection layer S092 is deposited using a vacuum deposition method, in which the antireflection material is evaporated onto the surface of the aforementioned metal top electrode layer S091, with a deposition vacuum degree of 5 × 10⁻⁶. -5 ~5×10 -4 Pa, evaporation temperature is 1000~2000℃, evaporation rate is 0~5 Å / S.

[0135] The following specific embodiments clearly and completely describe the technical solution of the present invention. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.

[0136] Example 1

[0137] This embodiment provides a method for fabricating a perovskite solar cell with a buried substrate, comprising the following steps:

[0138] S11: Provide a conductive substrate S052 and clean it by washing with ethanol, methanol, and acetone for 15 min each, and then drying for 30 min;

[0139] S12: A hole transport layer S001 is prepared on the surface of the conductive substrate S052; a spin-coating method is used, and the substrate is treated with a UV-Ozone generator for 15 min before preparation. A hole transport layer dispersion is prepared by weighing 0.05 mol NiO. x The powder was dissolved in 1 ml of ultrapure water and ultrasonically vibrated for 20 min. The hole transport layer dispersion was uniformly coated onto the sample surface. The spin coating speed was set to 2000 rpm, the spin coating time was 40 s, and the solution volume was 100 μL. After spin coating, annealing was performed at 450 °C for 30 min to obtain the hole transport layer S001.

[0140] S13: Preparation of SAMs layer S002; using spin coating, 0.5 mg of [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphoric acid (MeO-2PACz) was weighed and dissolved in 1 ml of methanol, heated to 40℃ and stirred for 30 min; 100 μL of this solution was uniformly coated onto the sample surface, the spin coating speed was set to 3000 rpm and the spin coating time was 40 s, and the spin was started; after spin coating, annealing was performed at 100℃ for 10 min to obtain SAMs layer S002;

[0141] S14: Preparation of the buried substrate SO20; using vacuum deposition, weigh 2g of 5-aminovaleric acid, place it in a crucible, close the chamber door of the vapor deposition machine, and wait for the vacuum degree to drop to the required value before slowly raising the temperature to begin preparing the buried substrate. The vapor deposition vacuum degree is 23 × 10⁻⁶. -4 Pa, the evaporation temperature is between 100℃ and 100℃, the initial evaporation rate is set to 0.1 Å / S, the evaporation thickness is 1 nm, and the sample is taken out after the evaporation is completed.

[0142] S15: Prepare the perovskite layer S003 using vacuum deposition, with a thickness of 400 nm; weigh appropriate amounts of perovskite precursor materials PbI2 (lead iodide) and CsBr (cesium bromide), place them in two crucibles respectively, and perform vapor deposition at a vacuum degree of 2 × 10⁻⁶. -4 The deposition temperature was between 400℃ and 600℃, and the evaporation rates of PbI2 and CsBr were set to 0.1 Å / s and 1 Å / s, respectively. After deposition, the sample was annealed at 100℃ for 1 min. The solution required for the second step was weighed, and 82 mg FAI, 10 mg MABr, and 9 mg MACl were dissolved in 1 ml of ethanol. The spin-coating speed was set to 4000 rpm, the spin-coating time to 30 s, and the solution volume to 100 μL. After spin-coating, air annealing was performed at 150℃ for 30 min to obtain the perovskite layer SO03.

[0143] S16: The electron transport layer S004 was prepared by vacuum deposition, with a thickness of 20 nm; the electron transport layer S004 material C... 60 Evaporation to the surface of the aforementioned perovskite layer S003, with a deposition vacuum of 5 × 10⁻⁶. -4 Pa, evaporation rate at 0.1 Å / s;

[0144] S17: An electrode layer S006 is prepared on the electron transport layer S004 using vacuum deposition. The electrode layer has a thickness of 200 nm. Cu is selected as the electrode layer material. The substrate sample prepared in step S16 is placed on a photomask for vapor deposition. The vapor deposition vacuum degree is 2 × 10⁻⁶. -4 Pa, the evaporation temperature is around 2000℃, the evaporation rate is 1 Å / S, and the electrode layer S006 is obtained;

[0145] Example 2

[0146] This embodiment provides a method for preparing a perovskite solar cell with a buried substrate. Except for step S14 in Embodiment 1, all other steps are the same.

[0147] S14: Preparation of the buried substrate SO20; using vacuum deposition, weigh 2g of 5-aminovaleric acid hydroiodate and place it in a crucible. Close the chamber door of the vapor deposition machine. After the vacuum level drops to the required value, slowly increase the temperature to begin preparing the buried substrate. The vapor deposition vacuum level is 23 × 10⁻⁶. -4 Pa, the evaporation temperature is between 100℃ and 100℃, the initial evaporation rate is set to 0.1 Å / S, the evaporation thickness is 1 nm, and the sample is taken out after the evaporation is completed.

[0148] Example 3

[0149] This embodiment provides a method for preparing a perovskite solar cell with a buried substrate. Except for step S14 in Embodiment 1, all other steps are the same.

[0150] S14: Preparation of the buried substrate SO20; using vacuum deposition, weigh 2g of 5-aminovaleric acid hydrobromide and place it in a crucible. Close the chamber door of the vapor deposition machine. After the vacuum level drops to the required value, slowly increase the temperature to begin preparing the buried substrate. The vapor deposition vacuum level is 23 × 10⁻⁶. -4 Pa, the evaporation temperature is between 100℃ and 100℃, the initial evaporation rate is set to 0.1 Å / S, the evaporation thickness is 1 nm, and the sample is taken out after the evaporation is completed.

[0151] Example 4

[0152] This embodiment provides a crystalline silicon tandem perovskite solar cell with a buried substrate and its fabrication method, including the following steps:

[0153] S21: A silicon substrate S070 is provided, wherein the silicon substrate S070 is composed of a metal bottom electrode layer S071, a first transparent electrode layer S072, a P-type substrate doped layer S073, a substrate passivation layer S074, a silicon substrate S075, a substrate surface passivation layer S076, and an N-type substrate doped layer S077.

[0154] S22: A tunnel junction S080 is prepared on the surface of a silicon substrate S070 by magnetron sputtering with a thickness of 100 nm.

[0155] S23: A hole transport layer S001 with a thickness of 20 nm is prepared on the surface of the tunnel junction S080; the preparation is carried out by spin coating, and the surface is treated with a UV-Ozone generator for 15 min before preparation. A hole transport layer dispersion is prepared by weighing 0.05 mol NiO. x The powder was dissolved in 1 ml of ultrapure water and ultrasonically vibrated for 20 min. The hole transport layer dispersion was uniformly coated onto the sample surface. The spin coating speed was set to 2000 rpm, the spin coating time was 40 s, and the solution volume was 100 μL. After spin coating, annealing was performed at 450 °C for 30 min to obtain the hole transport layer S001.

[0156] S24: Preparation of SAMs layer S002; using spin coating, 0.5 mg of [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphoric acid (MeO-2PACz) was weighed and dissolved in 1 ml of methanol, heated to 40℃ and stirred for 30 min; 100 μL of this solution was uniformly coated onto the sample surface, the spin coating speed was set to 3000 rpm and the spin coating time was 40 s, and the spin coating was started; after spin coating, annealing was performed at 100℃ for 10 min to obtain the SAMs layer;

[0157] S25: Preparation of the buried substrate SO20; using vacuum deposition, weigh 2g of 5-aminovaleric acid and place it in a crucible. Close the chamber door of the vapor deposition machine. After the vacuum level drops to the required value, slowly increase the temperature to begin preparing the buried substrate. The vapor deposition vacuum level is 23 × 10⁻⁶. -4 Pa, the evaporation temperature is between 100℃ and 100℃, the initial evaporation rate is set to 0.1 Å / S, the evaporation thickness is 1 nm, and the sample is taken out after the evaporation is completed.

[0158] S26: Prepare a perovskite layer S003, which is prepared by vacuum deposition and has a thickness of 400 nm; weigh appropriate amounts of perovskite precursor materials PbI2 and CsBr, place them in two crucibles respectively, and perform vapor deposition at a vacuum degree of 2 × 10⁻⁶. -4 The vapor deposition temperature was set between 400℃ and 600℃, and the evaporation rates of PbI2 and CsBr were set to 0.1 Å / s and 1 Å / s, respectively. After vapor deposition, the sample was removed and annealed at 100℃ for 1 min. The solution required for the second step was weighed, and 82 mg FAI, 10 mg MABr, and 9 mg MACl were dissolved in 1 ml of ethanol. The spin coating speed was set to 4000 rpm, the spin coating time to 30 s, and the solution volume to 100 μL. After spin coating, air annealing was performed at 150℃ for 30 min to obtain the perovskite layer SO03.

[0159] S27: An electron transport layer S004 is prepared on the surface of the perovskite layer S003, with a thickness of 20 nm prepared by vacuum deposition; the electron transport layer material C... 60 Evaporation to the surface of the aforementioned perovskite layer S003, with a deposition vacuum of 5 × 10⁻⁶. -4 Pa, evaporation rate at 0.1 Å / s;

[0160] S28: A transparent electrode layer S090 is prepared on the electron transport layer S004 by magnetron sputtering with a thickness of 150 nm. The transparent electrode material is sputtered onto the surface of the electron transport layer S004 with a controlled power of 40 W.

[0161] S29: A metal top electrode layer S091 is prepared on the transparent electrode layer S090 using vacuum deposition. The thickness is 500 nm, and Ag material is selected. The substrate sample prepared in the above steps is placed on a mask for vapor deposition. The vapor deposition vacuum degree is 2 × 10⁻⁶. -4 Pa, the evaporation temperature is 1500℃, the evaporation rate is 2 Å / S, and the metal top electrode layer S091 is obtained;

[0162] S30: An antireflection layer S092 is prepared on the metal top electrode layer S091 using vacuum deposition, with a thickness of 100 nm. The antireflection material is evaporated onto the surface of the metal top electrode layer S091, with a deposition vacuum degree of 5 × 10⁻⁶. -4 Pa, evaporation temperature at 1500℃, evaporation rate at 1 Å / s.

[0163] Comparative Example 1

[0164] This comparative example provides a method for fabricating a perovskite solar cell without a buried substrate. Except for step S14 in Example 1, all other steps are the same.

[0165] A standard solar intensity calibration (AM1.5) was performed using a solar simulator, and the area of ​​Comparative Example 1 and Example 2 was 0.09 cm². 2 The area of ​​Example 3 is 1 cm². 2 The devices obtained from the above embodiments and comparative examples were subjected to IV tests, including photoelectric conversion efficiency (PCE), fill factor (FF), open-circuit voltage (Voc), and short-circuit current (Jsc). Specifically, the energy conversion efficiency of the perovskite solar cells in each embodiment and comparative example was measured. Under atmospheric conditions, an AM1.5G standard light source was used as the simulated sunlight source. A four-channel digital source meter (Keithley 2440) was used to measure the current-voltage characteristic curve of the cell under the illumination of the light source, obtaining the open-circuit voltage Voc, short-circuit current density Jsc, and fill factor FF of the cell. The energy conversion efficiency Eff of the cell was then calculated. Eff = Pout / Popt = Voc × Jsc × (Vmpp × Jmpp) / (Voc × Jsc) = Voc × Jsc × FF, where Pout, Popp, Vmpp, and Jmpp are the cell's operating output power, incident light power, maximum power point voltage, and maximum power point current, respectively.

[0166] The starting voltage for Comparative Example 1, Example 1, Example 2, and Example 3 was set to 1.15V, and the cutoff voltage to 0V. The starting voltage for Comparative Example 3 and Example 4 was set to 1.86V, and the cutoff voltage to 0V. The measurement range was 100 mA. The results were rounded to two decimal places. The test results are shown in the table below:

[0167] Device Voc(V)Jsc(mA / cm) 2 FF (%) EFF (%) Example 1 1.12 20.67 80.78 18.71 Example 2 1.11 20.20 79.23 17.77 Example 3 1.11 20.15 79.85 17.85 Example 4 1.82 20.23 72.36 26.65 Comparative Example 1 1.09 19.92 77.96 17.07

[0168] The above embodiments are merely preferred embodiments of the present invention. It should be noted that, for those skilled in the art, various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principle of the present invention. All technical solutions after making equivalent substitutions to the claims of the present invention fall within the protection scope of the present invention, which is defined by the appended claims and their equivalents.

Claims

1. A method for vacuum deposition of perovskite thin films with buried passivation, characterized in that, The steps include: providing a battery substrate, preparing a hole transport layer on the surface of the battery substrate, preparing a SAMs layer on the surface of the hole transport layer, preparing a buried layer on the surface of the SAMs layer by immersion or vacuum deposition, and preparing a perovskite layer on the surface of the buried layer.

2. The method for buried passivation vacuum deposition of perovskite thin films according to claim 1, characterized in that, The buried layer is composed of at least one of the following materials: 5-aminovaleric acid, 5-aminovaleric acid hydroiodide, and 5-aminovaleric acid hydrobromide.

3. The method for buried passivation vacuum deposition of perovskite thin films according to claim 1, characterized in that, The preparation of the buried substrate by immersion includes: dissolving the buried substrate material in methanol solvent, heating and stirring to obtain a buried substrate solution, then immersing all the samples with prepared SAMs layers in the above-obtained buried substrate solution, and then taking out the samples and performing annealing treatment; wherein, the stirring and heating temperature is 0~80℃, the stirring time is 15~80min, the immersion time is 1~30min, the annealing temperature is 60~100℃, and the annealing time is 1~20min.

4. The method for buried passivation vacuum deposition of perovskite thin films according to claim 1, characterized in that, The vacuum deposition method for preparing the buried substrate includes: weighing 0.5~3g of the buried substrate material and placing it in a crucible; closing the chamber door of the vapor deposition machine; waiting for the vacuum degree to drop to the required value; and then slowly raising the temperature to begin preparing the buried substrate. The vapor deposition temperature range is 100℃~200℃, and the vapor deposition vacuum degree range is 3×10⁻⁶. -3 Pa ~ 1×10 -4 Pa, with a vapor deposition rate ranging from 0.05 Å / S to 3 Å / S.

5. The method for buried passivation vacuum deposition of perovskite thin films according to claim 1, characterized in that, The hole transport layer is prepared by at least one of spin coating and magnetron sputtering.

6. The method for buried passivation vacuum deposition of perovskite thin films according to claim 1, characterized in that, The SAMs layer is prepared by at least one of spin coating and vacuum deposition.

7. The method for buried passivation vacuum deposition of perovskite thin films according to claim 1, characterized in that, The preparation of the perovskite layer includes: placing the perovskite precursor material in a crucible for vapor deposition, with a vapor deposition vacuum degree ranging from 1×10⁻⁶. -4 ~3×10 -4 Pa, the evaporation temperature range is 200℃~700℃, the evaporation rate range is 0.1Å / S~10Å / S, after the evaporation is completed, the sample is taken out and annealed at a temperature of 100℃~300℃ for a time of 1min~45min.

8. The method for buried passivation vacuum deposition of perovskite thin films according to claim 1, characterized in that, It also includes the preparation of an electron transport layer on the perovskite layer, wherein the electron transport layer is prepared by one of spin coating, spray coating or vacuum deposition.

9. A perovskite single-junction solar cell, prepared using the buried passivation vacuum deposition perovskite thin film method according to any one of claims 1-8, characterized in that, The structure from bottom to top consists of: a battery substrate, a hole transport layer, a SAMs layer, a buried substrate, a perovskite layer, an electron transport layer, and an electrode layer. The battery substrate includes a glass substrate and a conductive substrate thereon.

10. A crystalline silicon perovskite tandem solar cell, prepared using the buried passivation vacuum deposition perovskite thin film method according to any one of claims 1-8, characterized in that, The battery structure, from bottom to top, consists of a battery substrate, a hole transport layer, a SAMs layer, a buried substrate, a perovskite layer, an electron transport layer, a transparent electrode layer, a metal top electrode layer, and an anti-reflection layer. The battery substrate, from bottom to top, includes a silicon wafer substrate and a tunnel junction.

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