Power conversion device

WO2026199845A1PCT designated stage Publication Date: 2026-10-01SUNGROW POWER SUPPLY CO LTD
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
PCT/CN2025/120873
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-28
Filing Date
2025-09-12
Publication Date
2026-10-01

Smart Images

  • Figure CN2025120873_01102026_PF_FP_ABST
    Figure CN2025120873_01102026_PF_FP_ABST
Patent Text Reader

Abstract

A power conversion device. At least one power semiconductor device (101) is embedded in a first PCB (1), and the power semiconductor device (101) is connected to circuit traces on at least one conductive layer (110) in the first PCB (1), so as to form a power conversion circuit by means of the first PCB (1). Moreover, a branch carrying a current to be measured in the power conversion circuit passes through a magnetic ring (2), and at least a portion of a magnetic field sensor (4) is arranged at an opening of the magnetic ring (2). Furthermore, the magnetic ring (2) is disposed on a surface of the first PCB (1) or above the first PCB (1), or a portion of the magnetic ring (2) is disposed inside the first PCB (1), while the magnetic field sensor (4) is disposed on the surface of the first PCB (1). Accordingly, the magnetic field sensor (4) and the magnetic ring (2) are integrated with the power conversion circuit on the same PCB.
Need to check novelty before this filing date? Find Prior Art

Description

A power conversion device

[0001] This disclosure claims priority to Chinese Patent Application No. 202510403145.4, filed on March 28, 2025, entitled "A Power Conversion Device", the entire contents of which are incorporated herein by reference. Technical Field

[0002] This disclosure relates to a power conversion device. Background Technology

[0003] Power conversion devices typically require current sampling to control their output, monitor their operating status, and provide protection and early warning functions. Common sampling methods for large currents in power conversion devices include resistance sampling, shunt sampling, and magnetic field sensor sampling. Among these, magnetic field sensor sampling is widely used in many fields due to its advantages of high accuracy, acceptable cost, and high efficiency. However, traditional magnetic field sensor sampling schemes suffer from problems such as large size, complex assembly, and high assembly costs. Summary of the Invention

[0004] The following is an overview of the detailed description of this disclosure. This overview is not intended to limit the scope of the claims. This disclosure provides a power conversion device, which adopts the following technical solution:

[0005] This disclosure provides a power conversion device, comprising: a first printed circuit board (PCB), at least one power semiconductor device, a magnetic field sensor, and a magnetic ring; wherein...

[0006] The power semiconductor device is embedded in the first PCB and connected to the circuit traces on at least one conductive layer of the first PCB to form the power conversion circuit of the power conversion device through the first PCB.

[0007] In the power conversion circuit, the branch of the current to be measured is run through the magnetic ring;

[0008] The magnetic ring is disposed on or above the surface of the first PCB, or the magnetic ring may be partially disposed inside the first PCB;

[0009] A magnetic field sensor is disposed on the surface of the first PCB, and the magnetic field sensor is located at least partially at the opening of the magnetic ring.

[0010] In one possible implementation, the branch through which the current to be measured flows includes: the target branch through which the current to be measured flows in each circuit trace;

[0011] The target branch is laid through the magnetic ring.

[0012] In one possible implementation, the opening of the magnetic ring is located on or above the surface of the first PCB, and the two sides of the opening of the magnetic ring pass through the slots of the first PCB and are inserted into the interior of the first PCB. The bottom surface of the magnetic ring opposite to the opening is located on the bottom surface of the first PCB opposite to the surface.

[0013] In one possible implementation, the size of the slot is larger than the size of the side of the magnetic ring, while still meeting the insulation requirements of the circuit traces.

[0014] In one possible implementation, the power conversion device further includes: a heat sink;

[0015] The heat sink is fixed to the bottom surface of the first PCB;

[0016] The heat sink has slots to accommodate the bottom surface of the magnetic ring.

[0017] In one possible implementation, the power conversion device further includes: a second PCB, and at least one power pin disposed between the first PCB and the second PCB;

[0018] The branches through which the current to be measured flows include: the target branch through which the current to be measured flows in each circuit trace, and the power pin; one end of the power pin is connected to the target branch, and the other end of the power pin is connected to the circuit trace on the second PCB.

[0019] The power pins are threaded through the magnetic ring.

[0020] In one possible implementation, all magnetic rings are disposed on or above the surface of the first PCB.

[0021] In one possible implementation, the power conversion circuit is connected to the external interface circuit via circuitry on a second PCB.

[0022] In one possible implementation, the power conversion device further includes: a heat sink;

[0023] The heat sink is fixed to the bottom surface of the first PCB, and the bottom surface of the first PCB is opposite to the surface.

[0024] In one possible implementation, the magnetic field sensor is either a Hall sensor or a magnetoresistive sensor.

[0025] In one possible implementation, the first PCB includes: at least two conductive layers, and an insulating layer between adjacent conductive layers.

[0026] In one possible implementation, at least one first via is provided in the insulating layer on one side of the power semiconductor device, and the power semiconductor device is connected to the corresponding circuit trace through the conductive material in the first via.

[0027] In one possible implementation, the power conversion device also includes: at least one copper base;

[0028] The copper base is embedded in the first PCB;

[0029] The wafer of the power semiconductor device is disposed on one side of the corresponding copper substrate;

[0030] At least one second through hole is provided in the insulating layer on the other side of the copper base, and the copper base is connected to the corresponding conductive layer through the conductive material in the second through hole.

[0031] In one possible implementation, the power conversion device further includes: a control circuit;

[0032] The control circuit is located in the first PCB or the third PCB;

[0033] The control circuit is connected to the control terminal of the power semiconductor device.

[0034] In one possible implementation, the power conversion device further includes: a current sampling circuit;

[0035] The input terminal of the current sampling circuit is connected to the output terminal of the magnetic field sensor;

[0036] The current sampling circuit is at least partially disposed on the surface of the first PCB.

[0037] After reading and understanding the accompanying diagrams and detailed descriptions, the other aspects can be understood.

[0038] Brief description of the attached figures

[0039] The above and other features, advantages, and aspects of the embodiments of this disclosure will become more apparent from the accompanying drawings and the following detailed description. Throughout the drawings, the same or similar reference numerals denote the same or similar elements. It should be understood that the drawings are schematic, and the originals and elements are not necessarily drawn to scale.

[0040] Figure 1 is a schematic diagram of a power conversion device provided by a conventional scheme; the top left corner shows the top view, the bottom left corner shows the front view, and the bottom right corner shows the left view.

[0041] Figure 2 is a three-dimensional schematic diagram of the power conversion device shown in Figure 1;

[0042] Figure 3 is a schematic diagram of a power conversion device provided in an embodiment of this disclosure; wherein, the upper left corner shows a top view, the lower left corner shows a front view, and the lower right corner shows a left view;

[0043] Figure 4 is a three-dimensional schematic diagram of the power conversion device shown in Figure 3;

[0044] Figure 5 is another structural schematic diagram of the power conversion device provided in the embodiment of this disclosure; wherein, the upper left corner shows a top view, the lower left corner shows a front view, and the lower right corner shows a left view;

[0045] Figure 6 is a three-dimensional schematic diagram of the power conversion device shown in Figure 5;

[0046] Figure 7 is a schematic diagram of the assembly of the two PCBs in the power conversion device shown in Figure 5. Detailed Implementation

[0047] The embodiments of this disclosure are described below with reference to the accompanying drawings. The terminology used in the Description of Embodiments section of this disclosure is for illustrative purposes only and is not intended to limit the scope of this disclosure.

[0048] The embodiments of this disclosure are described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this disclosure, and not all of them. Based on the embodiments of this disclosure, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this disclosure. It will be understood by those skilled in the art that, with the development of technology and the emergence of new scenarios, the technical solutions provided by the embodiments of this disclosure are also applicable to similar technical problems.

[0049] The terms “first,” “second,” etc., used in this disclosure are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such terms are interchangeable where appropriate; this is merely a way of distinguishing objects with the same attributes in the description of embodiments of this disclosure. Furthermore, the terms “comprising” and “having,” and any variations thereof, are intended to cover non-exclusive inclusion, so that a process, method, system, product, or apparatus that comprises a series of units is not necessarily limited to those units, but may include other units not expressly listed or inherent to those processes, methods, products, or apparatuses.

[0050] Figure 1 shows a three-view diagram of a common power conversion device based on a Hall sensor for current sampling, and Figure 2 shows a three-dimensional schematic diagram of the power conversion device. As shown in the figures, a heat sink 15 is usually installed below the power module 11; the output current of the power module 11, which is also the output current of the power conversion device, is led out as the current to be measured through the power pin bus 13; the Hall sensor 14 is used to measure the current to be measured flowing through the power pin bus 13, and the Hall sensor 14 is placed above the power pin bus 13; a U-shaped magnetic ring 12 wraps around the power pin bus 13 through which the current to be measured flows, and the Hall sensor 14 is placed at the opening above the magnetic ring 12, and the output terminal of the Hall sensor 14 is connected to the circuit board 16; the circuit board 16 is provided with part or all of the current acquisition circuit to complete the transmission and conversion of the current detection signal.

[0051] When current flows through the power pin busbar 13, a ring-shaped magnetic field is generated around it. The magnetic ring 12 causes most of the magnetic field lines to flow through its opening, passing through the Hall sensor 14. The magnetic flux density is proportional to the current magnitude. The Hall sensor 14 collects the magnetic flux density at its location and converts it into an electrical signal to measure the current. In this power conversion device, the power module 11, Hall sensor 14, and magnetic ring 12 are all independent assemblies, resulting in a large size, complex assembly, and the need for multiple wiring harnesses and structural components for connection and positioning, leading to high assembly costs.

[0052] Therefore, this disclosure provides a power conversion device to reduce size, assembly complexity, and assembly cost. The specific solution is as follows:

[0053] The three-view diagram of the power conversion device can be seen in Figure 3, which includes: a first printed circuit board PCB 1, at least one power semiconductor device 101, a magnetic field sensor 4, and a magnetic ring 2; wherein:

[0054] The power semiconductor device 101 is embedded in the first PCB 1 and connected to the circuit traces on at least one conductive layer 110 of the first PCB 1 to form the power conversion circuit of the power conversion device through the first PCB 1.

[0055] In practical applications, the first PCB 1 may include at least two conductive layers 110 and an insulating layer 111 between adjacent conductive layers 110. This embodiment does not limit the number of conductive layers 110; Figure 3 shows only one possible example. Furthermore, in Figure 3, 104 is the core board of the first PCB 1, 103 is also an insulating layer of the first PCB 1, and 112 is a conductive layer below the insulating layer 103. Both conductive layers 110 and 112 can be copper layers. As shown in Figure 3, at least one first via 105 is provided in the insulating layer 111 on one side of the power semiconductor device 101. The first via 105 may be filled with conductive material. The power semiconductor device 101 connects to the corresponding circuit traces (circuit traces on the conductive layer 110 above the insulating layer 111 where the first via 105 is located, as shown in Figure 3) through the conductive material in the first via 105.

[0056] In addition, the power semiconductor device 101 can also be disposed on a corresponding copper base 102; the copper base 102 is also embedded in the first PCB 1, and the wafer of the power semiconductor device 101 is disposed on one side of the corresponding copper base 102. At least one second through hole 106 is disposed in the insulating layer 111 on the other side of the copper base 102. The second through hole 106 can also be filled with conductive material. The copper base 102 is connected to the corresponding conductive layer 110 (the conductive layer 110 below the insulating layer 111 where the second through hole 106 is located, as shown in Figure 3) through the conductive material in the second through hole 106.

[0057] The power semiconductor device 101 is embedded in the first PCB 1 and connected to the circuit traces on the corresponding conductive layer 110. This eliminates the need for the power pin busbar 13 shown in Figures 1 and 2, and also eliminates the corresponding assembly process, thereby reducing the overall size of the power conversion device.

[0058] Figure 3 illustrates only one power semiconductor device 101 as an example. In practical applications, this is not the only possibility; the number can be determined based on the specific needs of the power conversion circuit. For instance, if the power conversion circuit uses a BOOST topology, the number of power semiconductor devices 101 can be one, or at least two power semiconductor devices 101 can be connected in parallel to increase the transmission power. If the power conversion circuit uses an inverter topology, the number of power semiconductor devices 101 can be greater than one. When the number of power semiconductor devices 101 is greater than one, not only can the power pin busbar 13 shown in Figures 1 and 2 be omitted, but the connections between different power semiconductor devices 101 can also be omitted, along with the independent packaging of each power semiconductor device 101, further reducing size and cost.

[0059] In practical applications, the power conversion circuit can be a DC / DC conversion circuit such as a BOOST topology, or a DC / AC conversion circuit such as a half-bridge inverter topology, an ANPC (Active Neutral Point Clamped) topology, or a three-phase full-bridge inverter topology. It can also be an AC / AC conversion circuit, and may even include two-stage conversion circuits. No limitation is made here; the choice depends on the specific application environment, and all are within the scope of this disclosure. When the power conversion circuit includes a DC / AC conversion circuit, the power conversion device can be used as a photovoltaic inverter, an automotive drive inverter, or an energy storage converter, etc. No limitation is made here; the choice depends on the specific application environment.

[0060] In this power conversion circuit, there is at least one current that is the current to be measured, such as the AC side current of the DC / AC conversion circuit. It is necessary to set up a corresponding current detection device, such as a magnetic field sensor 4. At this time, a branch that carries the current to be measured can be set to pass through the magnetic ring 2, and the magnetic field sensor 4 can be set to be located at least partially at the opening of the magnetic ring 2, so that the magnetic field gathered by the magnetic ring 2 can pass through the magnetic field sensor 4, thereby realizing the measurement of the current to be measured.

[0061] Furthermore, the magnetic ring 2 can be partially disposed inside the first PCB 1, as shown in Figure 3; alternatively, the magnetic ring 2 can be entirely disposed within a preset distance of the first PCB 1. The value of this preset distance is not limited, as long as it indicates that the distance between the magnetic ring 2 and the surface of the first PCB 1 is small. That is, the magnetic ring 2 can also be disposed on the surface or above the first PCB 1. Regardless of the arrangement of the magnetic ring 2, it will be highly integrated with the first PCB 1. Moreover, the magnetic field sensor 4 is disposed on the surface of the first PCB 1, making the magnetic field sensor 4 also highly integrated with the first PCB 1. Therefore, the space occupied by the magnetic ring 2 and the magnetic field sensor 4 can be reduced, thereby reducing the overall volume of the power conversion device. The assembly process and assembly cost of the power module 11, magnetic field sensor 14, and magnetic ring 12 shown in Figures 1 and 2 can also be omitted.

[0062] The power conversion device provided in this embodiment, based on the above principle, can integrate the magnetic field sensor 4 and its magnetic ring 2 with the power conversion circuit on the same PCB 1, making the entire power conversion device highly integrated and small in size, and eliminating the need for additional wiring harness connections, thereby reducing assembly complexity and assembly costs.

[0063] When there are at least two currents to be measured in the power conversion circuit, corresponding magnetic rings 2 and magnetic field sensors 4 can be set for them respectively. Compared with the traditional solutions shown in Figures 1 and 2, the size, assembly complexity and assembly cost can also be reduced by highly integrated devices.

[0064] In practical applications, the magnetic field sensor 4 can be a Hall sensor, or a magnetoresistive sensor such as AMR (Anisotropic Magnetoresistance Sensor), GMR (Giant Magnetoresistance Sensor), or TMR (Tunnel Magnetoresistance Sensor). When the magnetic field sensor 4 is a Hall sensor, a corresponding Hall chip can be used, and the power semiconductor device 101 can also use a corresponding power chip. By integrating both with the power conversion circuit, the power conversion device has significant advantages in terms of small size, high integration, and low cost.

[0065] In addition, the power conversion device may also include a control circuit (not shown in the figure). If the control circuit integrates a current sampling function, it can be directly connected to the output terminal of the magnetic field sensor 4 to perform analog-to-digital conversion on the current detection signal measured by the magnetic field sensor 4. If the control circuit does not have a current sampling function, the power conversion device may also include a current sampling circuit 5, so that the output terminal of the magnetic field sensor 4 is connected to the control circuit through the current sampling circuit 5. The current sampling circuit 5 performs analog-to-digital conversion on the current detection signal measured by the magnetic field sensor 4 and transmits it to the control circuit for use. The following description uses this method as an example. The control circuit can further use the digital signal of the current detection signal by processing and judging it to realize the operation control, monitoring and protection functions of the power conversion circuit. The control circuit is also connected to the control terminal of the power semiconductor device 101, so the operation control of the power conversion circuit can be realized by controlling the on and off state of the power semiconductor device 101.

[0066] In practical applications, the control circuit can be located in the first PCB 1 or in other PCBs, such as the third PCB (not shown). The current sampling circuit 5 can be entirely located on the surface of the first PCB 1, thus eliminating the need for the circuit board 16 with the current sampling circuit shown in Figures 1 and 2, further reducing size and assembly costs. Alternatively, the current sampling circuit 5 can be partially located on the surface of the first PCB 1, for example, its input wiring can be located on the first PCB 1. In this case, the other parts of the current sampling circuit 5 will not be far from the first PCB 1, for example, both can be located on the third PCB. Therefore, compared to the solutions shown in Figures 1 and 2, it also has the advantages of small size, easy assembly, and low cost. No limitation is made here; the specific application environment is considered, and all are within the scope of this disclosure.

[0067] Based on the previous embodiment, this embodiment provides an exemplary description of the specific structure of the power conversion device. As shown in FIG3, the branch through which the current to be measured flows may specifically include: the target branch 107 through which the current to be measured flows in each circuit trace; at this time, the target branch 107 passes through the magnetic ring 2.

[0068] As shown in Figure 3, the magnetic ring 2 can adopt a U-shaped structure, specifically including four surfaces: the surface where its opening is located can be called the top surface; the surface opposite to the top surface can be called the bottom surface; and the two side surfaces between the top and bottom surfaces. In practical applications, the structure of the magnetic ring 2 can also be in other forms, such as the corners between adjacent surfaces being arc-shaped, or even the entire magnetic ring 2 being elliptical in the left view, as long as it can wrap around the target branch 107. Regardless of the specific structure of the magnetic ring 2, the opening of the magnetic ring 2 can be located on the surface of the first PCB 1, and the two side surfaces on both sides of the opening of the magnetic ring 2 can pass through the slots 3 in the first PCB 1 and be inserted into the interior of the first PCB 1. The bottom surface of the magnetic ring 2 opposite to the opening is located on the bottom surface of the first PCB 1 opposite to the surface. In practical applications, for ease of installation, the magnetic ring 2 can be divided into two symmetrical halves, which pass through the first PCB 1 respectively and meet on the bottom surface of the first PCB 1, forming an opening on the surface of the first PCB 1. In addition, the size of the slot 3 must not only be larger than the size of the side of the magnetic ring 2 to accommodate the side of the magnetic ring 2, but also the size of the slot 3 must meet the insulation requirements of each circuit trace so that the distance between the magnetic ring 2 and each circuit trace meets the safety requirements.

[0069] As can be seen from Figure 3, the opening of the magnetic ring 2 can also be located above the surface of the first PCB 1, that is, there can be a certain distance between it and the surface of the first PCB 1.

[0070] In addition, the power conversion device may also include the heat sink 6 shown in FIG3; the heat sink 6 is fixed to the bottom surface of the first PCB 1 to realize the heat dissipation function of the first PCB 1; moreover, the heat sink 6 may also be provided with a slot 601 to accommodate the bottom surface of the magnetic ring 2.

[0071] Specifically, a target branch 107 can be etched on the conductive layer 110 above the power semiconductor device 101. The target branch 107 and the wafer of the first PCB 1 are connected through the conductive material in the first through-hole 105, and the corresponding current to be measured flows through the target branch 107. The magnetic field sensor 4 is arranged on the surface of the first PCB 1, and the current sampling circuit 5 is partially or completely etched on the surface of the first PCB 1. The magnetic ring 2 passes through the first PCB 1 through the slot 3 and completely encloses the target branch 107 in the magnetic ring 2. The first PCB 1 is fixed above the heat sink 6 by welding or pressing. The heat sink 6 is provided with a slot 601 to accommodate the lower surface, i.e., the bottom surface, of the magnetic ring 2, so that the bottom surface of the magnetic ring 2 is located on the other side of the target branch 107 and encloses the target branch 107.

[0072] When the power conversion device is operating, the current to be measured flows through the target branch 107, generating a magnetic field around the target branch 107. The magnetic ring 2 surrounding the target branch 107 concentrates the magnetic field, and the magnetic field sensor 4 measures the magnetic induction intensity at the opening of the magnetic ring 2. The magnetic induction intensity at this point is proportional to the magnitude of the current to be measured. The magnetic field sensor 4 converts the measured magnetic induction intensity signal into an electrical signal, which is transmitted to the control circuit through the current sampling circuit 5 to complete the current sampling.

[0073] The three-dimensional schematic diagram of the power conversion device provided in this embodiment is shown in Figure 4. In addition, the thickness of the first PCB 1 is enlarged in Figure 3 to show the intermediate layer structure of the first PCB 1 with embedded wafer. Its actual thickness should be less than that of the heat sink 6, as shown in Figure 4.

[0074] The power conversion device provided in this embodiment is suitable for PCB embedded module design with side-outlet wiring. The magnetic field sensor 4 and the power conversion circuit are located on the same PCB, which has obvious advantages such as high system integration, small size, no need for additional wiring harness connection, and low cost.

[0075] Another embodiment of this disclosure provides another exemplary description of the specific structure of the power conversion device, as shown in FIG5. It includes not only the first printed circuit board PCB 1, at least one power semiconductor device 101, magnetic field sensor 4, magnetic ring 2 and current sampling circuit 5 in the above embodiment, but also: a second PCB 7, and at least one power pin 108 disposed between the first PCB 1 and the second PCB 7.

[0076] At this time, the branch through which the current to be measured flows includes: the target branch 107 through which the current to be measured flows in each circuit trace, and the power pin 108; as shown in Figure 5, one end of the power pin 108 is connected to the target branch 107, and the other end of the power pin 108 is connected to the circuit trace on the second PCB 7.

[0077] Since the current to be measured flows through both the target branch 107 and the power pin 108, the measurement of the current to be measured can be achieved by having one of the target branch 107 and the power pin 108 pass through the magnetic ring 2. Since the power pin 108 is located on the outside of the first PCB 1, it can be placed through the magnetic ring 2, allowing the magnetic ring 2 to be entirely disposed on the surface of the first PCB 1 (as shown in Figure 5) or suspended within a predetermined distance from the surface of the first PCB 1 (i.e., above the surface of the first PCB 1, not shown in the figure). This is suitable for PCB embedded module designs with top-outgoing leads. The structure and shape of the magnetic ring 2 can be found in the previous embodiment and will not be repeated here.

[0078] In practical applications, the second PCB 7 can be equipped with a transfer circuit or a filter circuit, so that the power conversion circuit can be connected to the external interface circuit through the circuit on the second PCB 7, thereby realizing the external connection of the power conversion circuit, such as realizing the external connection of the AC side of the inverter topology.

[0079] In addition, the second PCB 7 can be disposed on the outer side of the surface of the first PCB 1, and the larger the overlapping area of ​​their projections, the more beneficial it is to reduce the size of the power conversion device; furthermore, the distance between the first PCB 1 and the second PCB 7 is only required to meet the setting requirements of the magnetic ring 2, thereby making the size of the power conversion device still relatively small.

[0080] Furthermore, the power conversion device may also include the heat sink 6 shown in Figure 5; the heat sink 6 is fixed to the bottom surface of the first PCB 1, with the bottom surface of the first PCB 1 facing the surface, to achieve the heat dissipation function for the first PCB 1. Since the magnetic ring 2 is entirely disposed on or above the surface of the first PCB 1, there is no need to provide the slot 301 shown in Figure 3 for the heat sink 6.

[0081] Similar to the structure shown in Figure 3, 104 is the core board of the first PCB 1, 103 is also an insulating layer of the first PCB 1, and 112 is the conductive layer under the insulating layer 103; both conductive layers 110 and 112 can be copper layers.

[0082] Specifically, a target branch 107 can be etched on the conductive layer 110 above the power semiconductor device 101. The target branch 107 and the wafer of the first PCB 1 are connected through the conductive material in the first through-hole 105. The corresponding current to be measured flows entirely through the target branch 107 and also flows to the second PCB 7 through the power pin 108. The magnetic field sensor 4 is arranged on the surface of the first PCB 1, and the current sampling circuit 5 is partially or entirely etched on the surface of the first PCB 1. The magnetic ring 2 is located on the surface of the first PCB 1 and completely encloses the power pin 108 in the magnetic ring 2. The opening of the magnetic ring 2 cooperates with the magnetic field sensor 4, so that the magnetic field sensor 4 is partially or entirely located in the opening of the magnetic ring 2. The first PCB 1 is fixed above the heat sink 6 by means of soldering or pressing.

[0083] When the power conversion device is operating, the current to be measured flows through the power pin 108, generating a magnetic field around the power pin 108. A magnetic ring 2 surrounding the power pin 108 concentrates this magnetic field, and a magnetic field sensor 4 measures the magnetic flux density at the opening of the magnetic ring 2. The magnetic flux density at this point is proportional to the magnitude of the current to be measured. The magnetic field sensor 4 converts the measured magnetic flux density signal into an electrical signal, which is then transmitted to the control circuit via the current sampling circuit 5 to complete the current sampling.

[0084] A three-dimensional schematic diagram of the power conversion device provided in this embodiment is shown in Figure 6. Additionally, in Figure 5, the thickness of the first PCB 1 is enlarged to show the intermediate layers of the embedded wafer; its actual thickness should be less than that of the heat sink 6, as shown in Figure 6. Figure 7 shows an assembly schematic diagram between the first PCB 1 and the second PCB 7 in this power conversion device.

[0085] The power conversion device provided in this embodiment has the magnetic field sensor 4 and the power conversion circuit located on the same PCB. Compared with the traditional solution with multiple PCBs, it has obvious advantages such as high system integration, small size, no need for additional wiring harness connection and low cost.

[0086] In practical applications, the power conversion device can also adopt other structural settings. As long as the magnetic field sensor 4 and the power conversion circuit are highly integrated on a PCB based on the technology of embedded power semiconductor device 101 in the PCB, and the arrangement of the magnetic ring 2 is adjusted in conjunction with the position setting of the magnetic field sensor 4, the sampling of the current to be measured can be realized. Moreover, through the routing design of different layers of the PCB, the current conversion and current sampling functions can be realized separately, giving the power conversion device significant advantages of small size, high integration and low cost.

[0087] Similar or identical parts between the various embodiments in this specification can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, for system or system embodiments, since they are basically similar to method embodiments, the description is relatively simple, and relevant parts can be referred to the description of the method embodiments. The systems and system embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of this embodiment solution according to actual needs. Those skilled in the art can understand and implement this without creative effort.

[0088] Those skilled in the art will further recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, computer software, or a combination of both. To clearly illustrate the interchangeability of hardware and software, the components and steps of the various examples have been generally described in terms of functionality in the foregoing description. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this disclosure.

[0089] The features described above regarding the disclosed embodiments can be substituted or combined with each other to enable those skilled in the art to implement or use this disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A power conversion device, comprising: The first printed circuit board (PCB) comprises at least one power semiconductor device (101), a magnetic field sensor (4), and a magnetic ring (2); wherein, The power semiconductor device (101) is embedded in the first PCB (1) and connected to the circuit traces on at least one conductive layer (110) in the first PCB (1) to form the power conversion circuit of the power conversion device through the first PCB (1); The branch through which the current to be measured flows in the power conversion circuit passes through the magnetic ring (2); The magnetic ring (2) is disposed on the surface of or above the first PCB (1), or the magnetic ring (2) may be partially disposed inside the first PCB (1); The magnetic field sensor (4) is disposed on the surface of the first PCB (1), and the magnetic field sensor (4) is located at least partially at the opening of the magnetic ring (2).

2. The power conversion device according to claim 1, wherein, The branch through which the current to be measured flows includes: the target branch (107) through which the current to be measured flows in each of the circuit traces; The target branch (107) is inserted into the magnetic ring (2).

3. The power conversion device according to claim 2, wherein, The opening of the magnetic ring (2) is located on the surface of the first PCB (1) or above it. The two sides of the opening of the magnetic ring (2) pass through the slot (3) of the first PCB (1) and are inserted into the interior of the first PCB (1). The bottom surface of the magnetic ring (2) opposite to the opening is located on the bottom surface of the first PCB (1) opposite to the surface.

4. The power conversion device according to claim 3, wherein, The size of the slot (3) is larger than the size of the side of the magnetic ring (2) and meets the insulation requirements of the circuit trace.

5. The power conversion device according to claim 3 or 4, wherein, The power conversion device further includes: a heat sink (6); The heat sink (6) is fixed to the bottom surface of the first PCB (1); The radiator (6) is provided with a slot (601) to accommodate the bottom surface of the magnetic ring (2).

6. The power conversion device according to claim 1, wherein, The power conversion device further includes: a second PCB (7), and at least one power pin (108) disposed between the first PCB (1) and the second PCB (7); The branch through which the current to be measured flows includes: the target branch (107) through which the current to be measured flows in each of the circuit traces, and the power pin (108); one end of the power pin (108) is connected to the target branch (107), and the other end of the power pin (108) is connected to the circuit trace on the second PCB (7); The power pin (108) passes through the magnetic ring (2).

7. The power conversion device according to claim 6, wherein, All of the magnetic rings (2) are disposed on the surface of or above the first PCB (1).

8. The power conversion device according to claim 6 or 7, wherein, The power conversion circuit is connected to the external interface circuit through the circuit on the second PCB (7).

9. The power conversion device according to any one of claims 6 to 8, wherein, The power conversion device further includes: a heat sink (6); The heat sink (6) is fixed to the bottom surface of the first PCB (1), and the bottom surface of the first PCB (1) is opposite to the surface.

10. The power conversion device according to any one of claims 1 to 9, wherein, The magnetic field sensor is either a Hall sensor or a magnetoresistive sensor.

11. The power conversion device according to any one of claims 1 to 9, wherein, The first PCB (1) includes at least two of the conductive layers (110) and an insulating layer (111) between adjacent conductive layers (110).

12. The power conversion device according to claim 11, wherein, At least one first through-hole (105) is provided in the insulating layer (111) located on one side of the power semiconductor device (101), and the power semiconductor device (101) is connected to the corresponding circuit trace through the conductive material in the first through-hole (105).

13. The power conversion device according to claim 11 or 12, wherein, The power conversion device further includes: at least one copper base (102); The copper base (102) is embedded in the first PCB (1); The wafer of the power semiconductor device (101) is disposed on one side of the corresponding copper substrate (102); At least one second through hole (106) is provided in the insulating layer (111) located on the other side of the copper base (102), and the copper base (102) is connected to the corresponding conductive layer (110) through the conductive material in the second through hole (106).

14. The power conversion device according to any one of claims 1 to 13, wherein, The power conversion device further includes: a control circuit; The control circuit is located in the first PCB (1) or the third PCB; The control circuit is connected to the control terminal of the power semiconductor device (101).

15. The power conversion device according to any one of claims 1 to 14, wherein, The power conversion device further includes: a current sampling circuit (5); The input terminal of the current sampling circuit (5) is connected to the output terminal of the magnetic field sensor (4); The current sampling circuit (5) is at least partially disposed on the surface of the first PCB (1).