Power module, preparation method, power conversion apparatus, and electrical device

Abstract

Embodiments of the present disclosure provide a power module, a preparation method, a power conversion apparatus, and an electrical device. The power module comprises: a power chip, a temperature sensor support layer covering the power chip, a temperature measurement channel located in the temperature sensor support layer, and a temperature sensor provided on the temperature sensor support layer, wherein the temperature sensor is configured to measure the temperature of the power chip by means of the temperature measurement channel. The power module, the preparation method, the power conversion apparatus, and the electrical device enable accurate measurement of the temperature of a power chip.

Description

Power modules, manufacturing methods, power conversion devices and electrical equipment

[0001] This disclosure claims priority to Chinese Patent Application No. 202510378236.7, filed on March 27, 2025, entitled "Power Module, Preparation Method, Power Conversion Device and Electrical Equipment", the entire contents of which are incorporated herein by reference. Technical Field

[0002] This disclosure relates to a power module, a manufacturing method, a power conversion device, and electrical equipment. Background Technology

[0003] During operation, the power chips in electrical equipment generate a significant amount of heat, raising the internal temperature of the equipment. When the temperature of the power chip exceeds its normal operating temperature, the power chip may fail.

[0004] Therefore, it is necessary to monitor the temperature of the power chip in order to provide appropriate over-temperature protection. Summary of the Invention

[0005] The following is an overview of the detailed description of this disclosure. This overview is not intended to limit the scope of the claims. This disclosure provides a power module, a method for manufacturing the power module, a power conversion device, and an electrical device. The technical solutions adopted in this disclosure are as follows:

[0006] In a first aspect, embodiments of this disclosure provide a power module, including: a power chip; a temperature-sensing support layer covering the power chip; a temperature measurement channel located on the temperature-sensing support layer; and a temperature sensor disposed on the temperature-sensing support layer for detecting the temperature of the power chip through the temperature measurement channel.

[0007] In some embodiments, the temperature-sensing support layer has a surface layer adjacent to the temperature sensor; the temperature measurement channel extends from the surface of the power chip to the surface layer of the temperature-sensing support layer.

[0008] In some embodiments, the surface layer is a conductive layer, and a temperature measurement circuit is formed on the conductive layer; the temperature measurement circuit is used to receive an electrical signal generated by a temperature sensor that characterizes the temperature of the power chip.

[0009] In some embodiments, the temperature-sensing support layer includes an insulating layer located between the surface layer and the surface of the power chip, and the temperature sensing channel penetrates the insulating layer.

[0010] In some embodiments, a thermally conductive material is disposed within the temperature measurement channel and configured to transfer the heat of the power chip to the target area on the surface; the temperature sensor is a contact temperature sensor, wherein the temperature-sensitive element of the contact temperature sensor is in contact with the target area.

[0011] In some embodiments, the temperature measurement channel penetrates the temperature-sensing support layer and has a light propagation medium within it; the temperature sensor is an optical temperature sensor; the optical temperature sensor receives light signals through the light propagation medium and measures the temperature of the power chip.

[0012] In some embodiments, the temperature measurement channel penetrates the temperature-sensing support layer and has an electromagnetic wave propagation medium within the temperature measurement channel; the temperature sensor is a radio frequency (RF) temperature sensor; the RF temperature sensor is configured to receive electromagnetic waves through the electromagnetic wave propagation medium and measure the temperature of the power chip.

[0013] In some embodiments, the power module further includes a core layer located on the side of the temperature-sensing support layer near the power chip; the power chip is embedded in the core layer.

[0014] Secondly, embodiments of this disclosure provide a method for fabricating a power module, comprising: providing a power chip; covering the power chip with a temperature-sensitive support layer; forming a temperature measurement channel in the temperature-sensitive support layer; and disposing a temperature sensor on the temperature-sensitive support layer, wherein the temperature sensor is configured to detect the temperature of the power chip through the temperature measurement channel.

[0015] Thirdly, embodiments of this disclosure provide a power conversion device, including any of the aforementioned power modules.

[0016] Fourthly, embodiments of this disclosure provide an electrical device including any of the aforementioned power-to-mode converters.

[0017] In several embodiments provided in this disclosure, by covering the power chip with a temperature-sensing support layer for supporting the temperature sensor and setting a temperature measurement channel in the temperature-sensing support layer, the temperature sensor can detect the temperature of the power chip through the temperature measurement channel, thereby achieving a more accurate detection of the power chip's temperature.

[0018] Brief description of the attached figures

[0019] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0020] Figure 1 is a cross-sectional structural diagram of a power module provided in some embodiments of this disclosure.

[0021] Figure 2 is a cross-sectional structural diagram of a power module provided in some embodiments of this disclosure.

[0022] Figure 3 is a top view of the power module provided in some embodiments of this disclosure.

[0023] Figure 4 is a schematic diagram of the power module temperature measurement signal flow provided in some embodiments of this disclosure.

[0024] Figure 5 is a cross-sectional structural diagram of a power module provided in some embodiments of this disclosure.

[0025] Figure 6 is a top view of the power module provided in some embodiments of this disclosure.

[0026] Figure 7 is a schematic flowchart of the power module fabrication method provided in some embodiments of this disclosure. Detailed Implementation

[0027] The technical solutions in some embodiments of this specification will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this specification, and not all embodiments. Based on the embodiments in this specification, all other embodiments obtained by those skilled in the art without creative effort are within the scope of this specification.

[0028] It should be noted that when an element is referred to as being "fixed to" another element, it can be directly on the other element or there may be an intervening element. When an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. The terms "...above," "...around," "...below," and similar expressions in this disclosure are based on the orientation or positional relationships shown in the accompanying drawings and are only for the convenience of describing embodiments of this disclosure and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this disclosure.

[0029] A power module contains a power chip, on which power devices are fabricated. For example, power devices are fabricated on a semiconductor wafer to form a power chip. The power devices can be fully controllable power electronic switching devices, such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), IGBTs (Insulated Gate Bipolar Transistors), or novel gallium nitride and silicon carbide power devices.

[0030] The temperature of a power chip can refer to the actual operating temperature of the power device. In some cases, it can also refer to the junction temperature. Specifically, the junction temperature refers to the actual operating temperature of the PN junction within the power device, which is higher than the temperature of the power device's package. During operation, the junction temperature of a power chip needs to be controlled within a specified range; exceeding this range may damage the power device. Therefore, the junction temperature of the power chip is the basis for determining whether over-temperature protection of the power module is necessary. Accurately obtaining the junction temperature of the power chip is crucial to the reliability of the power module. Therefore, a temperature sensor is required to accurately detect the junction temperature of the power chip.

[0031] Integrating temperature sensors onto power chips allows for accurate detection of junction temperature, but it increases the chip's area. The more devices integrated onto a power chip, the larger its area, leading to increased manufacturing complexity, higher production costs, and lower reliability. To avoid increasing the chip's area while placing the temperature sensor closer to the chip for accurate junction temperature detection, one approach is to encapsulate the power chip and then drill holes in the package to embed the temperature sensor. However, this method of embedding the temperature sensor within the chip's package disrupts the original package structure, significantly reducing the device's reliability. It is typically used for laboratory testing and is difficult to apply to real-world products.

[0032] Besides the two junction temperature detection methods mentioned above, junction temperature can also be indirectly detected by measuring the heat-sensitive electrical parameters of power devices, such as on-state voltage drop. However, this method based on heat-sensitive electrical parameters requires adding additional test circuitry to the power module, increasing cost and reducing reliability. Another indirect method for detecting junction temperature involves detecting the temperature of components surrounding the power chip, such as the temperature of the substrate on which the power chip is located or the temperature of the plastic encapsulation shell used to package the power chip, and then using an electrothermal model to estimate the junction temperature of the power chip based on the temperature of the surrounding components. However, this indirect method for detecting the junction temperature of power chips places high demands on the thermoelectric model and is difficult to handle the result errors caused by the dispersion of batch parameters, thus failing to obtain a highly accurate junction temperature.

[0033] Based on the problems existing in the above-mentioned junction temperature detection methods, this disclosure provides a technical solution that can detect the junction temperature of power chips more accurately.

[0034] As shown in Figure 1, in some embodiments, the power module 100 provided in this disclosure includes a power chip 101, a temperature-sensing support layer 102, a temperature measurement channel 104, and a temperature sensor 106. The temperature-sensing support layer 102 covers the power chip 101; the temperature measurement channel 104 is located within the temperature-sensing support layer 102; and the temperature sensor 106 is disposed on the temperature-sensing support layer 102 for detecting the temperature of the power chip 101 through the temperature measurement channel 104.

[0035] The power chip 101 may have a first surface and a second surface facing away from each other. The first surface may be provided with power devices, i.e., the first surface may be an active surface. A temperature-sensing support layer 102 covers the first surface of the power chip 101, used to limit the relative position of the temperature sensor 106 and the power chip 101, thereby integrating the temperature sensor 106 and the power chip 101 into the same power module 100, so that the temperature of the power chip 101 can be detected by the temperature sensor 106. In this embodiment, the temperature sensor 106 (temperature transducer) refers to a sensor that receives a physical signal characterizing temperature and outputs an electrical signal characterizing temperature.

[0036] The temperature sensing channel 104 is located within the temperature-sensing support layer 102 and is configured to transmit a physical signal characterizing the temperature of the power chip 101. This allows the temperature sensor 106 to obtain the physical signal and generate an electrical signal characterizing the temperature of the power chip 101 based on it. The physical signal can be energy used to characterize the temperature of the power chip 101. For example, the physical signal can be the heat generated when the power chip 101 is operating or the thermal radiation energy of the power chip 101 (such as infrared radiation energy). The more heat generated by the power chip 101, the higher its temperature and the higher its thermal radiation energy. Therefore, the temperature sensor 106 can obtain a physical signal characterizing the temperature of the power chip 101 (such as the junction temperature) through the temperature sensing channel 104, thereby achieving accurate detection of the temperature of the power chip 101.

[0037] In this embodiment, by covering the power chip 101 with a temperature-sensing support layer 102 for supporting the temperature sensor 106, and setting a temperature measurement channel 104 in the temperature-sensing support layer 102, the temperature sensor 106 can detect the temperature of the power chip 101 through the temperature measurement channel 104. This allows for accurate detection of the junction temperature of the power chip 101 without increasing the area of ​​the power chip 101, effectively reducing the manufacturing cost of the power module 100 and improving the reliability of the power module 100.

[0038] Please refer to Figures 1 and 2 together. In some embodiments, the temperature-sensing support layer 102 has a surface layer 110 adjacent to the temperature sensor 106; the temperature measurement channel 104 extends from the surface of the power chip 101 to the surface layer 110 of the temperature-sensing support layer 102.

[0039] In this embodiment, the temperature-sensing support layer 102 can be a multi-layer structure. Specifically, the temperature-sensing support layer 102 can have a surface layer 110 adjacent to the temperature sensor 106. The temperature sensor 106 can be disposed on the surface layer 110, so that the temperature sensor 106 and the power chip 101 have a relatively fixed positional relationship.

[0040] In this embodiment, the temperature sensing channel 104 extends from the surface of the power chip 101 to the surface layer 110, allowing the physical signal characterizing the temperature of the power chip 101 to reach the surface layer 110 of the temperature-sensing support layer 102 via the temperature sensing channel 104. This enables the temperature sensor 106, disposed on the surface layer 110, to obtain this physical signal and generate an electrical signal characterizing the temperature of the power chip 101 based on it. It is understood that the material in the temperature sensing channel 104 can be configured according to the temperature sensing principle of the temperature sensor 106, enabling the temperature sensing channel 104 to transmit the physical signal required by the temperature sensor 106.

[0041] In some embodiments, the surface layer 110 is a conductive layer 110, and the conductive layer 110 forms a temperature measurement circuit 138; the temperature measurement circuit 138 is used to receive an electrical signal generated by the temperature sensor 106 that characterizes the temperature of the power chip 101.

[0042] In this embodiment, the temperature measurement circuit 138 is formed on the conductive layer 110 of the temperature-sensing support layer 102 and is used to receive the electrical signal generated by the temperature sensor 106. Furthermore, the temperature measurement circuit 138 can be electrically connected to the control circuit 118 through the signal pin 120 and output an electrical signal representing the temperature of the power chip 101 to the control circuit 118.

[0043] In some embodiments, as shown in FIG4, after receiving the electrical signal V1, the temperature measuring circuit 138 can process the electrical signal V1 into an electrical signal V2 that is easy for the control circuit 118 to use. Then, the temperature measuring circuit 138 transmits the electrical signal V2 to the control circuit 118 through the signal pin 120. The control circuit 118 determines the temperature of the power chip 101 based on the electrical signal V2 and performs corresponding over-temperature protection control accordingly.

[0044] Please refer to Figures 2 and 3. In some embodiments, the electrical connection terminals of the power chip 101 are led out to the surface layer 110 of the temperature-sensing support layer 102 through a conductive channel 114, and a temperature measurement circuit 138 is disposed on the surface layer 110. Thus, the electrical connection terminals of both the power chip 101 and the temperature measurement circuit 138 are located on the surface layer 110 of the temperature-sensing support layer 102, facilitating external connection via pins disposed on the surface layer 110. This design effectively improves the integration and electrical connection flexibility of the power module 100.

[0045] In this embodiment, at least a portion of the temperature measurement circuit 138 is located on the temperature sensing support layer 102, eliminating the need for additional power module 100 structure. This helps to reduce the size of power module 100, improve integration, and reduce manufacturing costs.

[0046] In some embodiments, a functional circuit 116 corresponding to the power module 100 is provided on the conductive layer 110 of the temperature-sensing support layer 102. The electrical connection terminals of the power chip 101 are led out to the conductive layer 110 of the temperature-sensing support layer 102 through the conductive channel 114, so as to facilitate electrical connection between the power chip 101 and the electrical connection terminals of the functional circuit 116.

[0047] The conductive layer 110 of the temperature-sensing support layer 102 is connected to pins, which can be used to electrically connect the conductive layer of the power chip 101 to the outside world, thereby realizing the electrical connection between the power chip 101, the functional circuit 116, and the temperature measurement circuit 138 and other circuits and / or modules. The functional circuit 116 is a circuit that works in conjunction with the power chip 101 to perform a certain function. For example, when the power module 100 is used in a power conversion device, the functional circuit 116 can be a circuit that performs the power conversion function.

[0048] In this embodiment, the electrical connection terminals of the power chip 101 can be led to the conductive layer 110 of the temperature-sensing support layer 102 through the conductive channel 114, and the physical signal characterizing the temperature of the power chip 101 can be transmitted to the conductive layer 110 of the temperature-sensing support layer 102 through the temperature measurement channel 104. Thus, a temperature sensor 106, a functional circuit 116, and a temperature measurement circuit 138 can be set on the conductive layer 110 of the temperature-sensing support layer 102, and electrically connected to other circuits and / or modules through the conductive layer 110 on the surface of the temperature-sensing support layer 102. This enables accurate detection of the temperature of the power chip 101 and also improves the integration of the power module 100.

[0049] In some embodiments, the power module 100 may further include a control circuit 118, and the conductive layer 110 of the temperature-sensing support layer 102 is electrically connected to the control circuit 118 via pins. The control circuit 118 is used to perform over-temperature protection on the power chip 101 based on the received electrical signal characterizing the temperature of the power chip 101. The aforementioned pins include signal pins 120 for transmitting control signals and / or detection signals and power pins 122 for transmitting energy. When the power module 100 is applied to a power conversion device, the control circuit 118 is also used to control the switching operation of the power devices in the power chip 101 to achieve power conversion.

[0050] In some embodiments, the temperature-sensing support layer 102 includes an insulating layer 108 located between the surface layer 110 and the power chip 101, and the temperature sensing channel 104 penetrates the insulating layer 108.

[0051] In this embodiment, the insulating layer 108 and the conductive layer 110 are stacked to form a temperature-sensing support layer 102. The insulating layer 108 and the conductive layer 110 can have a certain stress strength as a whole, so that the temperature-sensing support layer 108 can stably define the relative position of the temperature sensor 106 and the power chip 101. Furthermore, the insulating layer 108 electrically isolates the active surface of the power chip 101 from the conductive layer 110, reducing interference between them. The temperature sensing channel 104 penetrates the insulating layer 108, so that the physical signal characterizing the temperature of the power chip 101 can be received by the temperature sensor 106 through the temperature sensing channel 104.

[0052] In this embodiment, the conductive channel 114 is electrically connected to the power chip 101 and extends through the insulating layer 108 to the conductive layer 110 on the surface of the temperature-sensing support layer 102, thereby leading out the electrical connection terminals of the power chip 101 to the conductive layer 110 on the surface of the temperature-sensing support layer 102 for electrical connection with other circuits or modules.

[0053] In some embodiments, the temperature-sensing support layer 102 may also include multiple layers of insulating and conductive layers spaced apart. Different conductive layers can each perform a corresponding function, or multiple conductive layers can be electrically connected to achieve a specified function.

[0054] In some embodiments, the temperature sensing channel 104 has a thermally conductive material and is used to transfer the heat of the power chip 101 to the target area of ​​the surface layer 110; the temperature sensor 106 can be a contact temperature sensor, which measures the temperature of the power chip 101 by contacting the target area.

[0055] In this embodiment, the temperature sensor 106 is a contact temperature sensor. For example, the temperature sensor 106 can be a thermocouple or an NTC (Negative Temperature Coefficient) thermistor. The temperature-sensitive element of the temperature sensor 106 contacts the target area of ​​the temperature-sensing support layer 102 to obtain the heat in the target area. In this embodiment, the heat in the target area is the physical signal transmitted by the temperature measurement channel 104, and the heat in the target area can characterize the temperature of the power chip 101.

[0056] In some embodiments, the temperature sensing channel 104 may be located around the temperature sensor 106 to form a target area in the area of ​​the temperature-sensing support layer 102 corresponding to the temperature sensor 106. The temperature sensing channel 104 may include a thermally conductive via (not shown) and a thermally conductive material filled within the thermally conductive via to transfer the heat generated by the power chip 101 to the target area of ​​the temperature-sensing support layer 102 based on the thermally conductive material.

[0057] In one specific embodiment, a thermally conductive via extends from the first surface of the power chip 101 in a direction away from the power chip 101, penetrates the insulating layer 108, and extends to the conductive layer 110 of the temperature-sensing support layer 102. The thermally conductive material filling the thermally conductive via can be the same as the material of the conductive layer 110. For example, the thermally conductive material can be metallic copper or metallic silver. Of course, in some embodiments, the thermally conductive material is not limited to metallic materials, but can also be organic or inorganic materials with good thermal conductivity.

[0058] By filling the thermally conductive through-hole with a thermally conductive material with high thermal conductivity, the temperature sensing channel 104 can form a thermally conductive channel between the surface of the power chip 101 and the surface layer 110 of the temperature-sensing support layer 102, so that the heat of the power chip 101 can be transferred to the target area of ​​the temperature-sensing support layer 102 in the form of heat transfer. Thus, the temperature sensor 106 can detect the temperature of the power chip 101 by obtaining the heat of the target area of ​​the temperature-sensing support layer 102.

[0059] In one specific embodiment, the temperature sensing channel 104 and the conductive channel 114 of the temperature-sensing support layer 102 can have the same structure and forming material, and they can be formed in the same process step, which helps to simplify the fabrication process of the power module 100 and reduce the fabrication cost. In some embodiments, the conductive layer 110, the conductive channel 114, and the temperature sensing channel 104 can be formed using the same material, such as copper, which simplifies the process flow of the power module and improves the thermal conductivity of the temperature sensing channel 104, thereby improving the temperature detection accuracy of the power chip 101.

[0060] Please refer to Figures 5 and 6 together. In some embodiments, the temperature sensing channel 104 extends through the temperature-sensing support layer 102, and the temperature sensing channel 104 has a light propagation medium; the temperature sensor 106 is an optical temperature sensor; the optical temperature sensor receives light signals through the light propagation medium and measures the temperature of the power chip 101.

[0061] In this embodiment, the temperature sensor 106 can be an optical temperature sensor. The physical signal transmitted by the temperature measurement channel 104 can be a light signal. Corresponding to the temperature measurement principle of the optical temperature sensor, the physical signal transmitted by the temperature measurement channel 104 can be an infrared light signal or a laser signal, etc. For example, the temperature sensor 106 can be an infrared temperature sensor. The power chip 101 generates heat during operation, which will generate infrared light radiation. This infrared light can reach the infrared temperature sensor through the temperature measurement channel 104. Alternatively, the temperature sensor 106 can be a laser temperature sensor. This laser temperature sensor emits a laser beam to the first surface of the power chip 101 through the temperature measurement channel 104, and receives the laser signal reflected from the first surface of the power chip 104 through the temperature measurement channel 104 to obtain an electrical signal characterizing the temperature of the power chip 101.

[0062] In this embodiment, the light propagation medium can transmit light signals, and the specific material of the light propagation medium can vary depending on the optical temperature sensor. For example, if temperature sensor 106 is an infrared temperature sensor, the light propagation medium can be a material with good conductivity for infrared light. The light propagation medium can be air, nitrogen, or a transparent gel, etc. Alternatively, if temperature sensor 106 is a laser temperature sensor, the corresponding light propagation medium can be a material that can effectively conduct laser light. For example, the light propagation medium can be air, nitrogen, argon, transparent optical glass (such as quartz or sapphire), transparent gel, or optical fiber materials, etc.

[0063] Of course, in some embodiments, the optical temperature sensor includes, but is not limited to, infrared temperature sensors and laser temperature sensors, and can also be other sensors that use light signals to measure temperature. For example, the optical temperature sensor can also be a fiber optic temperature sensor. Naturally, those skilled in the art will select the specific material of the light propagation medium according to the actual situation, which will not be elaborated further.

[0064] In some embodiments, the temperature measuring channel 104 penetrates the temperature-sensing support layer 102, and the temperature measuring channel 104 contains an electromagnetic wave propagation medium; the temperature sensor 106 is a radio frequency temperature sensor; the radio frequency temperature sensor receives electromagnetic waves through the electromagnetic wave propagation medium and measures the temperature of the power chip 101.

[0065] In this embodiment, the temperature sensor 106 can be a radio frequency (RF) temperature sensor. The physical signal transmitted through the temperature measurement channel 104 can be an electromagnetic wave signal. Corresponding to the temperature measurement principle of the RF temperature sensor, the electromagnetic wave signal transmitted through the temperature measurement channel 104 can be a microwave signal, a millimeter-wave signal, etc. For example, the temperature sensor 106 can be a microwave radiometer. During operation, the power chip 101 generates heat, and its surface emits electromagnetic waves, including microwave or millimeter-wave frequencies, in the form of thermal radiation. These electromagnetic waves can reach the RF temperature sensor through the temperature measurement channel 104, thereby enabling the RF temperature sensor to receive the electromagnetic wave signal and generate an electrical signal reflecting the temperature of the power chip 101. Alternatively, the temperature sensor 106 can be an RF temperature sensor based on active emission and reflection characteristics. This sensor emits an RF signal to the first surface of the power chip 101 through the temperature measurement channel 104 and receives the RF signal reflected or scattered from the first surface of the power chip 101 through the temperature measurement channel 104. Based on the amplitude, phase, or frequency changes of the received signal, combined with the correlation between the RF signal reflection characteristics and temperature, the temperature of the power chip 101 is calculated.

[0066] In this embodiment, the electromagnetic wave propagation medium can be used to propagate radio frequency signals, and the specific material of the electromagnetic wave propagation medium can vary depending on the type of radio frequency temperature sensor. For example, if the temperature sensor 106 is a microwave radiometer, the electromagnetic wave propagation medium can be air, nitrogen, or other low-loss medium materials that have good transmission performance for microwave signals. Alternatively, if the temperature sensor 106 is a millimeter-wave temperature sensor, the electromagnetic wave propagation medium can be a gaseous medium or solid window material with low absorption and attenuation of millimeter waves, such as air, nitrogen, polytetrafluoroethylene (PTFE), high-density polyethylene (HDPE), engineering plastics with stable dielectric constants, or specialized wave-transparent materials used for millimeter-wave windows.

[0067] Of course, in some embodiments, the radio frequency temperature sensor includes, but is not limited to, microwave radiometers and millimeter-wave temperature detectors. It can also be other sensors that measure temperature based on electromagnetic waves, such as temperature measuring devices based on passive radio frequency resonance, surface acoustic wave radio frequency temperature sensors, or temperature tags with radio frequency readout capabilities. Those skilled in the art can select electromagnetic wave propagation medium materials with corresponding wave transmission properties according to the specific application scenario and the requirements of the radio frequency transmission path; specific details will not be elaborated further.

[0068] Please refer to Figures 2 and 3 together. In some embodiments, the power module 100 includes a circuit board 141. The circuit board 141 includes a temperature-sensitive support layer 102 and a core layer 126; the power chip 101 is embedded in the core layer 126 of the circuit board 141.

[0069] In this embodiment, the core layer 126 and the temperature-sensing support layer 102 can be integrally formed into a circuit board 141, and the power chip 101 can be embedded within the circuit board 141. Specifically, the core layer 126 can be provided with a groove, and the power chip 101 is embedded in the groove. The temperature-sensing support layer 102 covers the core layer 126, thereby enabling the power chip 101 to be embedded within the circuit board 141. Placing the power chip 101 within the groove on the core layer 126 makes the overall layout of the power module 100 more flexible and suitable for various needs.

[0070] In some embodiments, the core layer 126 may include an intermediate insulating layer 130 and central conductive layers 136 respectively disposed on both sides of the intermediate insulating layer 130. A temperature-sensitive support layer 102 can be covered on the core layer 126 using a multilayer wiring printing process. In some embodiments, the side of the core layer 126 away from the temperature-sensitive support layer 102 may be provided with insulating and conductive layers at intervals as needed. In some embodiments, the circuit board 141 may further include more insulating or conductive layers, forming a certain functional circuit. Those skilled in the art can configure it according to actual needs, and further details are omitted.

[0071] In some embodiments, the power module 100 may further include a base 128, on which the power chip 101 is first fixed, and then embedded together with the base 128 within the core layer 126. The base 128 may be made of a material with good thermal conductivity to accelerate the heat dissipation of the power chip 101. The power chip 101 may be fixed to the base 128 by means including but not limited to soldering, so as to achieve good heat transfer efficiency between the power chip 101 and the base 128.

[0072] In some embodiments, the power module 100 further includes a heat sink 134 located on the side of the core layer 126 away from the temperature-sensing support layer 102. The power module 100 also includes a thermally conductive medium 140 adjacent to the heat sink 134. The thermally conductive medium 140 can accelerate the heat conduction speed to the heat sink 134, which is beneficial to improving the overall heat dissipation speed of the power module 100.

[0073] In some embodiments, the control circuit 118 may be disposed on the control circuit board 119, which is located on the side of the temperature-sensing support layer 102 away from the power chip 100. The electrical connection terminals of the power module 100 are located on the conductive layer 110 of the temperature-sensing support layer 102 and are electrically connected to the control circuit 118 on the control circuit board 119 through signal pins 120 and / or power pins 122.

[0074] In some embodiments, signal pin 120 and / or power pin 122 are pin-type pins that pass through sockets on the control board 119 and are electrically connected to other circuits or modules other than the power module 100, thereby enabling the external connection of the power module 100.

[0075] Please refer to Figure 7. The fabrication method of the power module provided in some embodiments of this disclosure includes the following steps. It should be noted that the fabrication method provided in the embodiments of this disclosure can, but is not limited to, fabricating the power module provided in any embodiment of this disclosure. For ease of description, the steps have been numbered as described above, but the numbering does not limit the order of the corresponding process steps due to the numerical order. That is, unless otherwise specified, the order of the steps is not limited.

[0076] Step S02: Provide the power chip.

[0077] Step S04: Cover the power chip with a temperature-sensing support layer.

[0078] Step S06: Form a temperature measurement channel in the temperature-sensing support layer.

[0079] Step S08: Place the temperature sensor on the temperature-sensing support layer. The temperature sensor is used to detect the temperature of the power chip through the temperature measurement channel.

[0080] Taking the power module provided in this embodiment of the present disclosure as an example, the method for preparing the power module involves covering a temperature-sensitive support layer on a power chip and forming a temperature measurement channel within the support layer to transmit physical signals characterizing the temperature of the power chip to the surface of the support layer. After a temperature sensor is placed on the support layer, the temperature of the power chip can be detected through the temperature measurement channel.

[0081] In some embodiments, the power module can be applied in a power conversion device to realize the flow and conversion of current in the power conversion device. The power module can also serve as a switching device in the power conversion device.

[0082] The junction temperature of the power chip in a power module is often among the highest temperatures in the entire power conversion device, and it can easily become a heat dissipation bottleneck. Therefore, accurate temperature detection of the power chip is necessary to reduce the risk of damage through appropriate control. In this embodiment, a reasonable structural design can improve the accuracy of power chip temperature detection, thereby providing a basis for further control.

[0083] In some embodiments, this disclosure also provides a power conversion device, which includes a power module provided according to any embodiment of this disclosure or a power module prepared according to a method for preparing a power module provided according to any embodiment of this disclosure.

[0084] In some embodiments, the power conversion device may include, but is not limited to, a DC-DC converter, a DC-AC converter, and an AC-DC converter.

[0085] In this embodiment, the functions and effects achieved by the power conversion device can be explained by referring to the foregoing embodiments, and will not be repeated here.

[0086] In some embodiments, this disclosure also provides an electrical device including the power conversion device provided in the embodiments of this disclosure. The electrical device provided in the embodiments of this disclosure can accurately detect the junction temperature of its internal power chip during operation, and has low manufacturing cost and high reliability.

[0087] In this embodiment, the electrical equipment may include, but is not limited to, on-board chargers (OBC), inverters, transformers, rectifiers, and frequency converters.

[0088] In this embodiment, the functions and effects achieved by the electrical equipment can be explained by referring to the foregoing embodiments, and will not be repeated here.

[0089] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this invention should be determined by the scope of the claims.

Claims

1. A power module, comprising: Power chip; A temperature-sensitive support layer covers the power chip; The temperature measurement channel is located in the temperature-sensing support layer; A temperature sensor, located on the temperature-sensing support layer, is used to detect the temperature of the power chip through the temperature measurement channel.

2. The power module according to claim 1, wherein, The temperature-sensing support layer has a surface layer adjacent to the temperature sensor; The temperature measurement channel extends from the surface of the power chip to the surface of the temperature-sensing support layer.

3. The power module according to claim 2, wherein, The temperature measurement channel has a thermally conductive material and is used to transfer the heat of the power chip to the target area on the surface. The temperature sensor is a contact temperature sensor, which measures the temperature of the power chip by contacting the target area.

4. The power module according to claim 3, wherein, The temperature measurement channel is provided in multiple ways, and the multiple temperature measurement channels are arranged around the temperature sensor to form the target area around the temperature sensor.

5. The power module according to any one of claims 1 to 4, wherein, The surface layer of the temperature-sensing support layer adjacent to the temperature sensor is a conductive layer, and a temperature measurement circuit is formed on the conductive layer; the temperature measurement circuit is used to receive the electrical signal generated by the temperature sensor that characterizes the temperature of the power chip.

6. The power module according to claim 5, wherein, The temperature-sensing support layer includes an insulating layer located between the surface layer and the power chip, and the temperature sensing channel penetrates the insulating layer.

7. The power module according to claim 5, wherein, The power module further includes a control circuit, which receives an electrical signal characterizing the temperature of the power chip from the temperature measurement circuit and performs over-temperature protection control on the power chip based on the electrical signal.

8. The power module according to claim 5, wherein, The temperature-sensing support layer also includes a conductive channel, through which the electrical connection terminals of the power chip are connected to the conductive layer.

9. The power module according to claim 8, wherein, The conductive channel has the same structure as the temperature measuring channel; and / or, the material in the conductive channel is the same as the material in the temperature measuring channel.

10. The power module according to claim 9, wherein, The material of the conductive layer is the same as the material in the conductive channel.

11. The power module according to claim 1, wherein, The temperature measuring channel penetrates the temperature-sensing support layer, and the temperature measuring channel contains a light propagation medium; The temperature sensor is an optical temperature sensor; the optical temperature sensor receives light signals through the light propagation medium and measures the temperature of the power chip.

12. The power module according to claim 1, wherein, The temperature measuring channel penetrates the temperature-sensing support layer, and the temperature measuring channel contains an electromagnetic wave propagation medium; The temperature sensor is a radio frequency (RF) temperature sensor; the RF temperature sensor receives electromagnetic waves through the electromagnetic wave propagation medium and measures the temperature of the power chip.

13. The power module according to any one of claims 1 to 12, wherein, The power module includes a circuit board, which includes the temperature-sensing support layer and a core layer; the power chip is embedded in the core layer of the circuit board.

14. The power module according to claim 13, wherein, The power module also includes a heat-conducting base, the power chip is fixed on the base, and the base is embedded in the core layer.

15. A method for fabricating a power module, used to fabricate the power module as described in claim 1; the method comprising: Provide power chips; A temperature-sensitive support layer is applied to the power chip. A temperature measurement channel is formed in the temperature-sensing support layer; A temperature sensor is placed on the temperature-sensing support layer, and the temperature sensor is used to detect the temperature of the power chip through the temperature measurement channel.

16. A power conversion device, wherein, Includes the power module as described in any one of claims 1 to 14.

17. An electrical device, wherein, Includes the power conversion device as described in claim 16.

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