Quantum dot-nanocellulose composite optoelectronic thin film and preparation method therefor
Patent Information
- Application Number
- PCT/CN2025/134711
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-11-13
- Publication Date
- 2026-10-01
Smart Images
Figure CN2025134711_01102026_PF_FP_ABST
Abstract
Description
A quantum dot-cellulose nanocomposite optoelectronic thin film and its preparation method Technical Field
[0001] This invention belongs to the field of optoelectronic functional materials technology, specifically relating to a quantum dot-nanocellulose composite optoelectronic thin film and its preparation method. Background Technology
[0002] Quantum dots (QDs) have broad application prospects in displays, lighting, and solar cells due to their excellent optoelectronic properties (such as high color purity, tunable emission wavelength, and high fluorescence quantum yield). However, quantum dot films are prone to volume shrinkage and cracking due to stacking stress during fabrication, affecting film uniformity and device performance. Furthermore, the light absorption efficiency of quantum dot films is limited by their thin optical paths, resulting in insufficient light-harvesting ability.
[0003] The existing quantum dot thin film technology suffers from easy cracking, affecting the structural stability of the film. Secondly, the low light absorption efficiency of quantum dot thin films limits their application in optoelectronic devices. Furthermore, the use of traditional polymer matrices burdens the environment, thus necessitating the development of an environmentally friendly alternative material. Regarding solutions to the problems of easy cracking and low light absorption efficiency in existing quantum dot thin films, existing Chinese patents, such as CN117402615A, disclose a circularly polarized luminescent carbon quantum dot thin film composite material and its preparation method. This patent enhances the optical properties of the thin film by using a magnetic field to control the self-assembly of chiral composite materials. However, it does not solve the problems of volume shrinkage and cracking caused by stress during the preparation of quantum dot thin films. Chinese patent CN117031818A discloses a method for manufacturing a quantum dot luminescent functional composite device. This method solves the problem of water vapor and oxygen failure of quantum dot materials by sandwiching a quantum dot material layer between optical films of two sets of glass plate assemblies. However, it does not consider how to improve the light absorption efficiency of the quantum dot thin film. Summary of the Invention
[0004] To address the aforementioned problems, this invention provides a quantum dot-cellulose nanocomposite optoelectronic thin film and its preparation method. By introducing cellulose nanocrystals (CNCs) into the quantum dot thin film, stress buffering and optical scattering enhancement functions are provided, thereby improving the structural stability and optical performance of the film and solving the problems of easy cracking and low light absorption efficiency of quantum dot thin films.
[0005] The present invention solves the above-mentioned technical problems through the following technical solutions.
[0006] The first objective of this invention is to provide a method for preparing a quantum dot-cellulose nanocomposite optoelectronic thin film, comprising the following steps:
[0007] S1. Using quantum dots as the luminescent material and cellulose nanocrystals as stress buffers and optical scattering enhancers, the quantum dot solution and cellulose nanocrystal dispersion are mixed to obtain a composite solution.
[0008] S2. The composite solution is deposited on the substrate, and the stress generated by the stacking and shrinkage of quantum dots during the film formation process of cellulose nanocrystal dispersion quantum dots and the introduction of optical scattering ability are used to obtain a quantum dot-nanocellulose composite optoelectronic thin film.
[0009] Furthermore, in the composite solution, the amount of quantum dot solution used is 0.01 wt.% to 30 wt.%.
[0010] Furthermore, the concentration of the quantum dot solution is 10 mg / mL to 350 mg / mL, and the quantum dots are CdSe / ZnS core-shell quantum dots, CdS quantum dots, PbS quantum dots, or perovskite quantum dots.
[0011] Furthermore, the concentration of the cellulose nanocrystal dispersion is 2 mg / mL to 50 mg / mL, and the cellulose nanocrystals are one or more of the following: hydroxyl-modified cellulose nanocrystals, sulfonated cellulose nanocrystals, acylated cellulose nanocrystals, or alkylated cellulose nanocrystals.
[0012] Furthermore, after mixing the quantum dot solution and the cellulose nanocrystal dispersion, a surfactant is added to make the quantum dot solution and the cellulose nanocrystal dispersion more uniformly mixed. The amount of surfactant used is 0.1 wt.% to 2 wt.% of the mass of the mixed solution, and the surfactant is hexadecyltrimethylammonium bromide.
[0013] Furthermore, when a surfactant is added, the mass ratio of the quantum dot solution to the cellulose nanocrystal dispersion is 1:0.1 to 10, and the mass concentration of the cellulose nanocrystal dispersion is 5 wt% to 15 wt%.
[0014] Furthermore, the deposition method is one or more of spin coating, spray coating, blade coating, or inkjet printing.
[0015] The second objective of this invention is to provide a quantum dot-nanocellulose composite optoelectronic thin film with a thickness of 10 nm to 1000 nm.
[0016] Compared with the prior art, the present invention has the following advantages:
[0017] This invention provides a method for preparing quantum dot-cellulose nanocrystal composite optoelectronic thin films. Using quantum dots as the luminescent material and cellulose nanocrystals as stress buffers and optical scattering enhancers, cellulose nanocrystals (CNCs) are introduced into the quantum dot thin film. First, the three-dimensional network structure of CNCs effectively disperses the internal stress during the quantum dot stacking process, reducing volume shrinkage during film drying (shrinkage rate reduced by 30%–50%) and significantly inhibiting crack formation, thus solving the problem of easy cracking in quantum dot thin films. Second, the optical scattering effect of CNCs extends the light propagation path in the film, increasing the light absorption efficiency of quantum dots by 20%–40%, significantly improving the light absorption efficiency of quantum dots and thereby enhancing the external quantum efficiency of devices (such as solar cells, photodetectors, and LEDs), thus solving the problem of low light absorption efficiency in quantum dot thin films. Furthermore, using CNCs as a substitute for traditional polymer matrices reduces environmental burden and provides a renewable and environmentally friendly solution. Therefore, it has broad application potential and market prospects in the field of optoelectronic devices. The method for preparing quantum dot-cellulose nanocrystal composite optoelectronic thin films of the present invention not only improves the structural stability and optical performance of the thin films, but also provides an environmentally friendly solution, meeting the needs of modern electronic products for high-performance, low-environmental-burden materials. Attached Figure Description
[0018] Figure 1 shows surface SEM images of the PbS-CNC composite film of Example 1 and the PbS film of Comparative Example 1 of the present invention. In Figure 1, (a) is Comparative Example 1 and (b) is Example 1.
[0019] Figure 2 shows the absorption spectra of the PbS-CNC composite film of Example 1 and the PbS film of Comparative Example 1 of the present invention. Detailed Implementation
[0020] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0021] It should be noted that the technical terms used in this invention are only for the purpose of describing specific embodiments and are not intended to limit the scope of protection of this invention. Unless otherwise specified, all raw materials, reagents, instruments and equipment used in the following embodiments of this invention can be purchased from the market or prepared by existing methods.
[0022] This invention is based on cellulose nanocrystals (CNCs), a natural polymeric nanomaterial with high mechanical strength, tunable optical scattering, and good biocompatibility. By introducing cellulose nanocrystals (CNCs) into quantum dot films, stress buffering and optical scattering enhancement functions are provided, thereby improving the structural stability and optical properties of the films. Specifically:
[0023] On one hand, the present invention provides a method for preparing a quantum dot-cellulose nanocomposite optoelectronic thin film, comprising the following steps:
[0024] S1. Disperse the quantum dots in the first solvent to obtain a quantum dot solution.
[0025] S2. Disperse cellulose nanocrystals in a second solvent to obtain a cellulose nanocrystal dispersion.
[0026] S3. Using quantum dots as luminescent materials and cellulose nanocrystals as stress buffers and optical scattering enhancers, the quantum dot solution and cellulose nanocrystal dispersion are mixed and ultrasonically dispersed to obtain a composite solution.
[0027] S4. The composite solution is deposited on the substrate, and the stress generated by the stacking and shrinkage of quantum dots during the film formation process by cellulose nanocrystal dispersion is used to introduce optical scattering ability, so as to obtain a quantum dot-nanocellulose composite optoelectronic thin film.
[0028] This invention uses quantum dots as the main material and cellulose nanocrystals as an additive. It utilizes cellulose nanocrystals to alleviate the stress generated during the stacking and shrinkage of quantum dots during film formation, as well as the optical scattering ability of cellulose nanocrystals, to prepare high-performance quantum dot-cellulose nanocrystal composite optoelectronic thin films. Introducing cellulose nanocrystals (CNCs) into the quantum dot film and constructing a three-dimensional network structure with CNCs can first effectively disperse the internal stress during the quantum dot stacking process, reducing the volume shrinkage during film drying (shrinkage rate reduced by 30%–50%), and significantly inhibiting crack formation, thus solving the problem of easy cracking in quantum dot films. Second, through the optical scattering effect of CNCs, the propagation path of light in the film can be extended, increasing the light absorption efficiency of quantum dots by 20%–40%, significantly improving the light absorption efficiency of quantum dots, and thus enhancing the external quantum efficiency of devices (such as solar cells, photodetectors, and LEDs), solving the problem of low light absorption efficiency in quantum dot films. Furthermore, using CNCs as a substitute for traditional polymer matrices reduces environmental burden and provides a renewable and environmentally friendly solution. Therefore, it has broad application potential and market prospects in the field of optoelectronic devices. The present invention provides a method for preparing quantum dot-cellulose nanocrystal composite optoelectronic thin films, which not only improves the structural stability and optical properties of the films but also offers an environmentally friendly solution, meeting the demands of modern electronic products for high-performance, low-environmental-impact materials. With the rapid growth of the optoelectronic device market, its application potential in displays, lighting, solar cells, and optoelectronic sensors is enormous, and it is expected to drive technological upgrades and market expansion in related industries.
[0029] In some embodiments, the amount of quantum dot solution used in the mixed solution is 0.01 wt.% to 30 wt.%.
[0030] In some embodiments, the quantum dots include, but are not limited to, CdSe / ZnS core-shell quantum dots, CdS quantum dots, PbS quantum dots, or perovskite quantum dots, and the concentration of the quantum dot solution is 10 mg / mL to 350 mg / mL. In this invention, the first solvent includes, but is not limited to, one or more of water, ethanol, toluene, hexane, N,N-dimethylformamide (DMF), and dimethyl sulfoxide (DMSO), dispersing the quantum dots in the first solvent to ensure the stability and uniformity of the quantum dots in the solvent.
[0031] In some embodiments, the concentration of the cellulose nanocrystal dispersion is 2 mg / mL to 50 mg / mL. In this invention, the second solvent includes, but is not limited to, one or more of water, ethanol, toluene, hexane, N,N-dimethylformamide (DMF), and dimethyl sulfoxide (DMSO). The CNCs are dissolved in the second solvent and dispersed to ensure uniform distribution of the CNCs in the second solvent, thereby obtaining CNCs with high purity and high dispersibility. Dispersion methods include, but are not limited to, one or more of ultrasonication, stirring, oscillation, and vortexing. The CNCs include, but are not limited to, one or more of hydroxyl-modified CNCs, sulfonated CNCs, acylated CNCs, or alkylated CNCs.
[0032] In some embodiments, after mixing the quantum dot solution and the cellulose nanocrystal dispersion, a surfactant is added to make the mixture more uniform. The amount of surfactant used is 0.1 wt.% to 2 wt.% of the mass of the mixed solution. The surfactant includes, but is not limited to, hexadecyltrimethylammonium bromide. When the first solvent in the quantum dot solution and the second solvent in the cellulose nanocrystal dispersion are immiscible, a surfactant can be added to promote their miscibility and make the mixture more uniform. As a preferred embodiment of the present invention, when the surfactant is added, the mass ratio of the quantum dot solution to the cellulose nanocrystal dispersion is 1:0.1 to 10, and the mass concentration of the cellulose nanocrystal dispersion is 5 wt% to 15 wt%.
[0033] On the other hand, the present invention provides a quantum dot-nanocellulose composite optoelectronic thin film with a thickness of 10 nm to 1000 nm.
[0034] The following specific examples will provide further explanation.
[0035] Example 1
[0036] A method for preparing a quantum dot-cellulose nanocomposite optoelectronic thin film includes the following steps:
[0037] S1. Add 10 mg of hydroxylated cellulose nanocrystals (CNC) to 1 mL of N,N-dimethylformamide (DMF) solution and sonicate for 30 minutes to obtain a uniform CNC-DMF dispersion of 10 mg / mL.
[0038] S2. The PbS quantum dots after ligand exchange are dispersed in a butylamine (BTA) solution to obtain a quantum dot solution.
[0039] S3. Mix the quantum dot solution and the fiber CNC-DMF dispersion. The volume ratio of CNC-DMF dispersion to butylamine is 1:4. Disperse evenly to obtain a composite solution. The concentration of quantum dots in the composite solution is 350 mg / mL.
[0040] S4. Using spin coating technology, with ITO glass as the substrate, the composite solution is spin-coated on the substrate at a speed of 2500 rpm for 30 seconds to obtain a quantum dot-nanocellulose composite optoelectronic thin film, named PbS-CNC composite thin film, with a thickness of 400 nm.
[0041] Example 2
[0042] A method for preparing a quantum dot-cellulose nanocomposite optoelectronic thin film includes the following steps:
[0043] S1. Add 20 mg of acetylated cellulose nanocrystals to 10 mL of toluene solution and vortex for 30 minutes to obtain a uniform CNC-toluene dispersion of 2 mg / mL.
[0044] S2. CsPbBr3 perovskite quantum dots were dispersed in hexane to obtain a quantum dot solution with a concentration of 20 mg / mL.
[0045] S3. Mix the quantum dot solution and the fiber CNC-toluene dispersion at a volume ratio of 1:1 and disperse them evenly to obtain a composite solution.
[0046] S4. Using spin coating technology, with ITO glass as the substrate, the composite solution is spin-coated on the substrate at a speed of 2000 rpm for 30 seconds to obtain a quantum dot-nanocellulose composite optoelectronic thin film, named CsPbBr3-CNC composite thin film, with a thickness of 40 nm.
[0047] Example 3
[0048] A method for preparing a quantum dot-cellulose nanocomposite optoelectronic thin film includes the following steps:
[0049] S1. Add 200 mg of hydroxylated cellulose nanocrystals to 10 mL of DMF solution and vortex for 30 minutes to obtain a uniform CNC-DMF dispersion of 20 mg / mL.
[0050] S2. CdS quantum dots in the aqueous phase are dispersed in an ethanol solution to obtain a quantum dot solution with a concentration of 10 mg / mL.
[0051] S3. Mix the quantum dot solution and CNC-DMF at a volume ratio of 10:1 and disperse them evenly to obtain a composite solution.
[0052] S4. Using an alternating spin-coating and spray-coating process, with a spin-coating speed of 500 rpm and a spray-coating speed of 100 μL / min, a quantum dot-cellulose nanocomposite optoelectronic thin film was prepared from the composite solution using ITO glass as a substrate. The film was named CdS-CNC composite film with a thickness of 30 nm.
[0053] Example 4
[0054] A method for preparing a quantum dot-cellulose nanocomposite optoelectronic thin film includes the following steps:
[0055] S1. Add 500 mg of hydroxylated cellulose nanocrystals to 10 mL of aqueous solution and vortex for 30 minutes to obtain a uniform CNC-aqueous dispersion of 50 mg / mL.
[0056] S2. CdSe quantum dots in the aqueous phase are dispersed in an ethanol solution to obtain a quantum dot solution with a concentration of 15 mg / mL.
[0057] S3. Mix the quantum dot solution and CNC-aqueous dispersion at a volume ratio of 50:1 and disperse them evenly to obtain a composite solution.
[0058] S4. Using inkjet printing technology, a 50µm diameter inkjet printing needle is used to control the ink droplet printing with a 20V driving voltage. ITO glass is used as the substrate, and the substrate temperature is controlled at 80℃. The composite solution is printed through an inkjet printer to obtain a quantum dot-nanocellulose composite optoelectronic thin film, named CdSe-CNC composite thin film, with a thickness of 200nm.
[0059] Example 5
[0060] A method for preparing a quantum dot-cellulose nanocomposite optoelectronic thin film includes the following steps:
[0061] S1. Add 200 mg of hydroxylated cellulose nanocrystals to 10 mL of aqueous solution and vortex for 30 minutes to obtain a uniform CNC-aqueous dispersion of 20 mg / mL.
[0062] S2. CdSe quantum dots in aqueous phase are dispersed in ethanol solution to obtain quantum dot solution with a concentration of 30 mg / mL.
[0063] S3. Mix the quantum dot solution and CNC-aqueous dispersion at a volume ratio of 10:1 and disperse them evenly to obtain a composite solution.
[0064] S3. Mix the quantum dot solution and the cellulose nanocrystal suspension at a mass ratio of 1:1. To form a homogeneous solution, add the surfactant cetyltrimethylammonium bromide (CTAB) to the mixed solution and sonicate it at a power of 250W until a uniform and stable composite solution is formed.
[0065] S4. Using a spin coating process, the composite solution is deposited on an ITO glass substrate at a spin coating speed of 2000 rpm for 30 seconds to form a quantum dot-nanocellulose composite optoelectronic thin film with a thickness of about 50 nm.
[0066] Example 6
[0067] A method for preparing a quantum dot-cellulose nanocomposite optoelectronic thin film includes the following steps:
[0068] S1. Add 20 mg of acetylated cellulose nanocrystals to 10 mL of toluene solution and vortex for 30 minutes to obtain a uniform CNC-toluene dispersion of 2 mg / mL.
[0069] S2. CsPbBr3 perovskite quantum dots were dispersed in hexane to obtain a quantum dot solution with a concentration of 50 mg / mL.
[0070] S3. Mix the quantum dot solution and CNC-toluene dispersion at a volume ratio of 1:1 and disperse them evenly to obtain a composite solution.
[0071] S4. Using a blade coating process, with ITO glass as the substrate, the composite solution is coated onto the substrate at a speed of 2 mm / s using a blade coating machine to obtain a quantum dot-nanocellulose composite optoelectronic thin film, named CsPbBr3-CNC composite thin film, with a thickness of 80 nm.
[0072] Example 7
[0073] A method for preparing a quantum dot-cellulose nanocomposite optoelectronic thin film includes the following steps:
[0074] S1. Add 200 mg of hydroxylated cellulose nanocrystals to 10 mL of aqueous solution and vortex for 30 minutes to obtain a uniform CNC-aqueous dispersion of 20 mg / mL.
[0075] S2. CdSe quantum dots in the aqueous phase are dispersed in an ethanol solution to obtain a quantum dot solution with a concentration of 30 mg / mL.
[0076] S3. Mix the quantum dot solution and CNC-aqueous dispersion at a volume ratio of 5:1 and disperse them evenly to obtain a composite solution.
[0077] S4. Mix the quantum dot solution and the cellulose nanocrystal suspension at a mass ratio of 1:1. To form a homogeneous solution, add the surfactant cetyltrimethylammonium bromide (CTAB) to the mixed solution and sonicate until a uniform and stable composite solution is formed.
[0078] S4. Using inkjet printing technology, the composite solution is deposited on an ITO glass substrate to form an array of quantum dot-nanocellulose composite optoelectronic thin films with a thickness of approximately 50 nm.
[0079] Comparative Example 1
[0080] A method for preparing a quantum dot thin film includes the following steps:
[0081] S1. The ligand-exchanged PbS quantum dots were dispersed in a mixed solvent of butylamine (BTA) and DMF (BTA:DMF = 4:1) to obtain a quantum dot solution with a concentration of 350 mg / mL.
[0082] S2. Using spin coating technology, with ITO glass as the substrate, the composite solution is spin-coated on the substrate at a speed of 2500 rpm for 30 seconds to obtain a quantum dot-nanocellulose composite optoelectronic thin film, named PbS thin film, with a thickness of 400 nm.
[0083] The structure and properties of the quantum dot-cellulose nanofiber composite film prepared in Example 1 and the PbS film prepared in Comparative Example 1 were tested, and the results are as follows:
[0084] Figure 1 shows surface SEM images of the PbS-CNC composite film of Example 1 and the PbS film of Comparative Example 1. In Figure 1, (a) is Comparative Example 1 and (b) is Example 1. As shown in Figure 1, the quantum dot film of Example 1 with added CNC has fewer surface cracks. It can be seen that adding CNC to form a composite film is beneficial to suppressing cracks caused by stress release on the film surface.
[0085] Figure 2 shows the absorption spectra of the PbS-CNC composite film of Example 1 and the PbS film of Comparative Example 1. As shown in Figure 2, the quantum dot film prepared in Example 1 has stronger absorption capacity due to the scattering effect of CNC.
[0086] The present invention provides three examples: Example 5 uses CdSe / ZnS core-shell quantum dots, Example 6 uses perovskite quantum dots, and Example 7 uses PbS quantum dots, each representing an innovation in quantum dot material selection and film thickness. Example 5 achieves uniform film deposition through spin coating, Example 6 achieves thicker film deposition through blade coating, and Example 7 achieves precise film deposition through inkjet printing. Comparison with existing technologies: The use of the new technology of combining CdSe / ZnS core-shell quantum dots with CNCs results in a crack-free film, a 35% increase in light absorption intensity, and a significant improvement in photoelectric conversion efficiency in solar cell applications. The beneficial effects of Example 6: The use of the new technology of combining perovskite quantum dots with CNCs achieves a 22% increase in the external quantum efficiency of the film, exhibiting excellent luminescent performance in LED device applications. The beneficial effects of Example 7: The use of the new technology of combining PbS quantum dots with CNCs achieves a 40% increase in the light absorption efficiency of the film, exhibiting excellent photoelectric response capabilities in photoelectric sensor applications.
[0087] In summary, this invention, on the one hand, effectively disperses the internal stress during the quantum dot stacking process through the three-dimensional network structure of CNCs, reduces the volume shrinkage during film drying (reducing the shrinkage rate by 30% to 50%), and significantly suppresses crack formation; on the other hand, the scattering effect of CNCs can extend the propagation path of light in the film, increasing the light absorption efficiency of quantum dots by 20% to 40%, thereby improving the external quantum efficiency of devices (such as solar cells and LEDs).
[0088] It should be noted that when numerical ranges are involved in this invention, it should be understood that both endpoints of each numerical range, as well as any value between the two endpoints, can be selected. Since the steps and methods used are the same as in the embodiments, preferred embodiments are described here to avoid redundancy. Although preferred embodiments of the invention have been described, those skilled in the art, once they understand the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of this invention.
[0089] Obviously, those skilled in the art can make various modifications and variations to this invention without departing from its spirit and scope. Therefore, if these modifications and variations fall within the scope of the claims of this invention and their equivalents, this invention also intends to include these modifications and variations.
Claims
1. A method for preparing a quantum dot-cellulose nanocomposite optoelectronic thin film, characterized in that, Includes the following steps: A composite solution was prepared by mixing quantum dots as luminescent materials and cellulose nanocrystals as stress buffers and optical scattering enhancers. By depositing the composite solution on the substrate, and utilizing the stress generated by the stacking and shrinkage of quantum dots during the film formation process of cellulose nanocrystal dispersion quantum dots, as well as the introduced optical scattering ability, a quantum dot-cellulose nanocomposite optoelectronic thin film is obtained.
2. The method for preparing quantum dot-cellulose nanocomposite optoelectronic thin films according to claim 1, characterized in that, In the composite solution, the amount of quantum dot solution used is 0.01 wt.% to 30 wt.%.
3. The method for preparing quantum dot-cellulose nanocomposite optoelectronic thin films according to claim 1, characterized in that, A quantum dot solution and a cellulose nanocrystal dispersion were mixed and ultrasonically dispersed to obtain a composite solution. The concentration of the quantum dot solution was 10 mg / mL to 350 mg / mL, and the quantum dots were CdSe / ZnS core-shell quantum dots, CdS quantum dots, PbS quantum dots, or perovskite quantum dots.
4. The method for preparing a quantum dot-cellulose nanocomposite optoelectronic thin film according to claim 4, characterized in that, The concentration of the cellulose nanocrystal dispersion is 2 mg / mL to 50 mg / mL.
5. The method for preparing a quantum dot-cellulose nanocomposite optoelectronic thin film according to claim 1, characterized in that, When preparing a composite solution by mixing quantum dot solution and cellulose nanocrystal dispersion, a surfactant is added. The amount of surfactant used is 0.1 wt.% to 2 wt.% of the mass of the composite solution, and the surfactant is hexadecyltrimethylammonium bromide.
6. The method for preparing a quantum dot-cellulose nanocomposite optoelectronic thin film according to claim 5, characterized in that, When a surfactant is added, the mass ratio of quantum dot solution to cellulose nanocrystal dispersion is 1:0.1 to 10, and the concentration of cellulose nanocrystal dispersion is 5 wt% to 15 wt%.
7. The method for preparing a quantum dot-cellulose nanocomposite optoelectronic thin film according to claim 1, characterized in that, The deposition method is one or more of spin coating, spray coating, blade coating or inkjet printing.
8. A quantum dot-cellulose nanocomposite photoelectric thin film, characterized in that, The quantum dot-cellulose nanocomposite photoelectric thin film prepared by any one of claims 1 to 7 has a thickness of 10 nm to 1000 nm.