Transfer substrate, transfer method for light-emitting units, and light-emitting substrate

Abstract

The present application relates to the technical field of display, and discloses a transfer substrate, a transfer method for light-emitting units, and a light-emitting substrate. The transfer substrate comprises: a base, a release layer, and a plurality of light-emitting units, wherein the release layer is located on one side of the base, and the release layer is an inorganic layer comprising silicon. The transfer substrate further comprises: a first connection layer, located on the side of the release layer away from the base, and configured to connect the plurality of light-emitting units; and / or a second connection layer, located between the release layer and the base, the second connection layer being configured to connect the release layer and the base. In the present application, the inorganic layer comprising silicon is used as the release layer, and when the light-emitting units need to be transferred, the release layer in the transfer substrate is irradiated with laser light, so that the light-emitting units can be separated from the base. Because the inorganic release layer has lower cost, and after the inorganic release layer is dissociated by the laser light, no residue such as carbon black is generated, and subsequently, no additional process is required to remove the residue, thereby reducing the cost of a laser light-based massive transfer process.

Description

Transfer substrate, transfer method of light-emitting unit, and light-emitting substrate Technical Field

[0001] This application relates to the field of display technology, and in particular to a transfer substrate, a method for transferring light-emitting units, and a light-emitting substrate. Background Technology

[0002] In the field of display technology, display panels formed by light-emitting diodes (LEDs) are becoming increasingly widely used.

[0003] An LED display panel typically includes a driver backplane and multiple light-emitting units (LED chips) arranged in an array on one side of the driver backplane. Besides die bonding, laser mass transfer technology is also used to connect the light-emitting units to the driver backplane.

[0004] Currently, laser mass transfer technology utilizes a high-energy laser to irradiate a release layer between a transparent transfer substrate and an LED chip, causing a photochemical reaction that allows the chip to peel off. However, the release layer is often made of organic materials. After laser dissociation, residues of the release layer remain on the LED chip, affecting subsequent processes. Furthermore, organic release layers are relatively expensive. Summary of the Invention

[0005] This application provides a method for transferring a transfer substrate, a light-emitting unit, and a light-emitting substrate. This solves the problem of high cost in existing laser mass transfer processes. The technical solution is as follows:

[0006] On the one hand, a transfer substrate is provided for transferring multiple light-emitting units, including: a substrate and a release layer;

[0007] The release layer is located on one side of the substrate;

[0008] The release layer is an inorganic layer containing silicon.

[0009] The transfer substrate further includes:

[0010] A first connecting layer, located on the side of the release layer away from the substrate, is used to connect the plurality of light-emitting units;

[0011] And / or,

[0012] A second connecting layer is located between the release layer and the substrate; the second connecting layer is used to connect the release layer and the substrate.

[0013] In some embodiments, the release layer comprises: an amorphous silicon substrate and hydrogen elements doped in the amorphous silicon substrate.

[0014] In some embodiments, the hydrogen content is in the range of 1% to 35%.

[0015] In some embodiments, the transmittance of the substrate to the preset light is greater than or equal to 50%, and / or the transmittance of the release layer to the preset light is less than or equal to 10%.

[0016] The wavelength of the preset light is in the range of 300nm to 400nm.

[0017] In some embodiments, the release layer includes: a plurality of main release portions, each main release portion corresponding to at least one of the light-emitting units;

[0018] The orthographic projection of the light-emitting unit on the substrate overlaps with the orthographic projection of the corresponding main release part on the substrate.

[0019] In some embodiments, the plurality of main release sections are divided into at least two groups of main release sections, and the plurality of light-emitting units are divided into at least two groups of light-emitting units, wherein the at least two groups of main release sections correspond to the at least two groups of light-emitting units;

[0020] The release layer contains hydrogen, and for the two different main release sections, the hydrogen content in one main release section is different from that in the other main release section.

[0021] In some embodiments, the at least two sets of main release sections include a first set of main release sections and a second set of main release sections, wherein the hydrogen content in the first set of main release sections is different from the hydrogen content in the second set of main release sections.

[0022] The release layer further includes a plurality of sub-release portions, each sub-release portion corresponding to at least one of the light-emitting units. The sub-release portion is located on the side of the main release portion in the first group of main release portions that is away from the substrate, and the hydrogen content in the sub-release portion is the same as that in the main release portion in the second group of main release portions. The thickness of the sub-release portion is the same as that in the main release portion in the second group of main release portions.

[0023] In some embodiments, the transfer substrate includes a first interconnect layer;

[0024] Wherein, the thickness of the first connecting layer between the release layer corresponding to the first group of main release parts and the light-emitting unit is less than the thickness of the first connecting layer between the release layer corresponding to the second group of main release parts and the light-emitting unit.

[0025] In some embodiments, the transfer substrate includes a second interconnect layer and a first interconnect layer;

[0026] Wherein, the thickness of the second connecting layer between the release layer corresponding to the first group of main release parts and the substrate is less than the thickness of the second connecting layer between the release layer corresponding to the second group of main release parts and the substrate;

[0027] The thickness of the first connecting layer between the release layer corresponding to the first group of main release parts and the substrate is equal to the thickness of the first connecting layer between the release layer corresponding to the second group of main release parts and the substrate.

[0028] In some embodiments, the thickness ratio of the secondary release portion to the main release portion corresponding to the same light-emitting unit is 0.8–1.2.

[0029] In some embodiments, for two different sets of main release sections, the difference between the hydrogen content in one set of main release sections and the hydrogen content in the other set of main release sections is greater than or equal to 3%.

[0030] In some embodiments, the main release portion is strip-shaped, one main release portion corresponds to at least two light-emitting units, and the extending direction of the main release portion is parallel to the arrangement direction of the corresponding at least two light-emitting units;

[0031] Alternatively, the main release portion is block-shaped, and the orthographic projection of the main release portion onto the substrate covers the orthographic projection of at least one corresponding light-emitting unit onto the substrate.

[0032] In some embodiments, when one of the main release portions corresponds to at least two of the light-emitting units, the main release portion includes: at least two release blocks, and an auxiliary connection portion for connecting the at least two release blocks;

[0033] The at least two release blocks correspond one-to-one with the at least two light-emitting units, and the orthographic projection of the light-emitting unit on the substrate is located within the orthographic projection of the corresponding release block on the substrate;

[0034] The release layer contains hydrogen, and in the same main release section, the hydrogen content of each release block is the same as the hydrogen content of the auxiliary connection section.

[0035] In some embodiments, the thickness of the auxiliary connection portion is not greater than the thickness of the release block.

[0036] In some embodiments, the first connection layer includes a plurality of first connection blocks, which are used to connect one-to-one with the plurality of light-emitting units.

[0037] In some embodiments, the second connection layer includes a plurality of second connection blocks, which are used to connect one-to-one with the plurality of main release parts.

[0038] In some embodiments, the thickness of the main release portion is in the range of 100 nanometers to 150 nanometers in a direction perpendicular to the substrate.

[0039] In some embodiments, the transfer substrate includes a second interconnect layer, the second interconnect layer comprising:

[0040] The first part, wherein the orthographic projection of the first part on the substrate is located outside the orthographic projection of the light-emitting unit on the substrate;

[0041] The second part is located between the surface of the light-emitting unit near the substrate and the substrate;

[0042] The thickness of the first part is greater than the thickness of the second part.

[0043] In some embodiments, the surface of the release layer away from the substrate is configured to be flush with the surface of the light-emitting unit away from the substrate.

[0044] This disclosure also provides a method for transferring light-emitting units, including:

[0045] A transfer substrate and a receiving substrate are provided; the transfer substrate is any one of the transfer substrates described above, and the transfer substrate is connected to a plurality of light-emitting units;

[0046] The transfer substrate is placed on one side of the receiving substrate, so that the target light-emitting unit connected to the transfer substrate is aligned with the target position of the receiving substrate, and the target light-emitting unit is the light-emitting unit to be transferred;

[0047] Laser dissociation is performed on the portion of the release layer corresponding to the target light-emitting unit, so that the target light-emitting unit is separated from the transfer substrate and transferred to the receiving substrate.

[0048] In some embodiments, laser dissociation is performed on the portion of the release layer corresponding to the target light-emitting unit, including:

[0049] A mask structure is disposed on the side of the transfer substrate opposite to the receiving substrate, and the mask structure has a light-transmitting area;

[0050] Under the cover of the mask structure, the entire surface of the transfer substrate is irradiated with laser to dissociate the portion of the release layer corresponding to the target light-emitting unit;

[0051] In this embodiment, the orthographic projection of the portion of the release layer corresponding to the target light-emitting unit onto the substrate overlaps with the orthographic projection of the light-transmitting area onto the substrate.

[0052] In some embodiments, the plurality of main release portions of the release layer includes at least two sets of main release portions, the plurality of light-emitting units includes at least two sets of light-emitting units, and the at least two sets of main release portions correspond one-to-one with the at least two sets of light-emitting units;

[0053] Among them, the energy density threshold of the laser when the main release part of different groups is dissociated is different. The energy density threshold of the laser when dissociated is the minimum energy density of the laser required for the main release part to be dissociated.

[0054] In some embodiments, the main release section contains hydrogen, and the hydrogen content of different groups of main release sections is different; the at least two groups of main release sections include a first group of main release sections and a second group of main release sections, wherein the hydrogen content of the first group of main release sections is greater than the hydrogen content of the second group of main release sections.

[0055] Laser dissociation is performed on the portion of the release layer corresponding to the target light-emitting unit, including:

[0056] First, the transfer substrate is irradiated with a laser of the first energy density to dissociate the first group of main release parts and transfer the target light-emitting unit corresponding to the first group of main release parts;

[0057] The transfer substrate is then irradiated with a laser of the second energy density to dissociate the second set of main release parts and transfer the target light-emitting unit corresponding to the second set of main release parts.

[0058] Wherein, the first energy density is not less than the energy density threshold of the laser when the first group of main release parts is dissociated, and the first energy density is less than the energy density threshold of the laser when the second group of main release parts is dissociated, and the second energy density is not less than the energy density threshold of the laser when the second group of main release parts is dissociated.

[0059] In some embodiments, each light-emitting unit in the same group of light-emitting units is used to emit light of the same color; for two different groups of light-emitting units, the color of the light emitted by one group of light-emitting units is different from the color of the light emitted by the other group of light-emitting units.

[0060] or,

[0061] The transfer substrate has at least two partitions, and each main release part in the same group of main release parts is located in the same partition. Each main release part in the same group of main release parts is disposed in the same layer and has the same material and the same hydrogen content.

[0062] or,

[0063] Each light-emitting unit in the same group has the same size. For two different groups of light-emitting units, the size of one group of light-emitting units is different from that of the other group of light-emitting units.

[0064] In some embodiments, the transfer substrate includes: a first transfer substrate, a second transfer substrate, and a third transfer substrate; for each of the transfer substrates, the light-emitting units on the transfer substrate are used to emit light of the same color, and the light emitted by the light-emitting units on the first transfer substrate, the second transfer substrate, and the third transfer substrate are different colors;

[0065] The first transfer substrate, the second transfer substrate, and the third transfer substrate all include the at least two sets of main release portions;

[0066] The process includes placing the transfer substrate on one side of the receiving substrate, aligning the target light-emitting unit in the transfer substrate with the target position on the receiving substrate, and performing laser dissociation on the portion of the release layer corresponding to the target light-emitting unit to separate the target light-emitting unit from the transfer substrate and transfer it to the receiving substrate. This includes a first transfer process, which comprises:

[0067] The target light-emitting units corresponding to a group of main release parts on the first transfer substrate, the target light-emitting units corresponding to a group of main release parts on the second transfer substrate, and the target light-emitting units corresponding to a group of main release parts on the third transfer substrate are respectively transferred to the receiving substrate. After the first group transfer process, the light-emitting units corresponding to other groups of main release parts on the first transfer substrate are still retained on the first transfer substrate, the light-emitting units corresponding to other groups of main release parts on the second transfer substrate are still retained on the second transfer substrate, and the light-emitting units corresponding to other groups of main release parts on the third transfer substrate are still retained on the third transfer substrate.

[0068] In some embodiments, the transfer substrate is placed on one side of the receiving substrate, and the target light-emitting unit in the transfer substrate is aligned with the target position of the receiving substrate. The portion of the release layer corresponding to the target light-emitting unit is laser-dissociated to separate the target light-emitting unit from the transfer substrate and transfer it to the receiving substrate. This includes a second transfer process, which is performed after the first transfer process.

[0069] The second transfer process includes:

[0070] The target light-emitting unit corresponding to another set of main release parts on the first transfer substrate is transferred to another receiving substrate;

[0071] The target light-emitting unit corresponding to another set of main release sections on the second transfer substrate is transferred to another receiving substrate;

[0072] The target light-emitting unit corresponding to another set of main release portions on the third transfer substrate is transferred to another receiving substrate. This disclosure also provides a light-emitting substrate, comprising:

[0073] Receiving substrate;

[0074] Multiple light-emitting units located on one side of the receiving substrate;

[0075] The first connecting layer is located on the side of the light-emitting unit away from the receiving substrate.

[0076] In some embodiments, the light-emitting substrate further includes at least one secondary release portion located on the side of the first connecting layer away from the receiving substrate, the secondary release portion comprising hydrogen element;

[0077] When there are multiple secondary release parts corresponding to the same light-emitting unit, the multiple secondary release parts are stacked along the thickness direction of the light-emitting substrate, and the hydrogen content of the multiple secondary release parts corresponding to the same light-emitting unit is different, while the hydrogen content of the secondary release parts that are at the same distance from different light-emitting units is the same.

[0078] This disclosure also provides another light-emitting substrate, including:

[0079] Receiving substrate;

[0080] Multiple light-emitting units located on one side of the receiving substrate;

[0081] An adhesion layer is attached to the surface of the light-emitting unit away from the receiving substrate, and the adhesion layer comprises silicon.

[0082] In some embodiments, the receiving substrate is a color conversion substrate, used to convert the light emitted by the light-emitting unit into light of another color;

[0083] The adhesion layer is attached to the electrode surface of the light-emitting unit, and the adhesion layer also includes at least one of metal nanoparticles and doped semiconductors, wherein the doped semiconductors include N-type doped semiconductors and P-type doped semiconductors. Attached Figure Description

[0084] The accompanying drawings are provided to further illustrate the present disclosure and form part of the specification. They are used together with the following detailed description to explain the present disclosure, but do not constitute a limitation thereof. In the drawings:

[0085] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0086] Figure 1 is a schematic diagram of a laser mass transfer process;

[0087] Figure 2 is a schematic diagram of the structure of the transfer substrate provided in an embodiment of this application;

[0088] Figure 3 is a top view of Figure 2;

[0089] Figure 4 is a schematic diagram of another transfer substrate provided in an embodiment of this application;

[0090] Figure 5 is a top view of Figure 4;

[0091] Figure 6 is a schematic diagram of the grouping of the release layer provided in an embodiment of this application;

[0092] Figure 7 is a schematic diagram of another grouping of the release layer provided in an embodiment of this application;

[0093] Figure 8 is a schematic diagram of another grouping of release layers provided in an embodiment of this application;

[0094] Figure 9 is a schematic diagram of another grouping of release layers provided in an embodiment of this application;

[0095] Figure 10 is a schematic diagram of the partitioning of the release layer provided in an embodiment of this application;

[0096] Figure 11A is a schematic planar structure diagram of the auxiliary connection part provided in an embodiment of this application;

[0097] Figure 11B is a cross-sectional structural diagram of the auxiliary connection part provided in an embodiment of this application;

[0098] Figure 12 is a cross-sectional view of another transfer substrate provided in an embodiment of this application;

[0099] Figure 13 is a cross-sectional view of another transfer substrate provided in an embodiment of this application;

[0100] Figure 14 is a cross-sectional view of another transfer substrate provided in an embodiment of this application;

[0101] Figure 15 is a flowchart illustrating the method for transferring the light-emitting unit provided in an embodiment of this application;

[0102] Figure 16 is a schematic diagram of the effect of the transfer substrate with organic release layer after transfer;

[0103] Figure 17 is a schematic diagram of the effect of the transfer substrate after transfer according to the embodiment of this application;

[0104] Figure 18 is a schematic diagram of the manufacturing process of the transfer substrate provided in the embodiment of this application;

[0105] Figure 19 is a schematic diagram of a process for transferring a light-emitting unit according to an embodiment of this application;

[0106] Figure 20 is a schematic diagram of another process of the light-emitting unit transfer method provided in the embodiment of this application;

[0107] Figure 21 is a schematic diagram of another method for transferring light-emitting units provided in an embodiment of this application;

[0108] Figure 22 is a schematic diagram of another process of a method for transferring a light-emitting unit provided in an embodiment of this application;

[0109] Figure 23 is a schematic diagram of another method for transferring a light-emitting unit provided in an embodiment of this application;

[0110] Figure 24 is a schematic diagram of another process of a method for transferring a light-emitting unit provided in an embodiment of this application;

[0111] Figure 25 is a schematic diagram of another process of a method for transferring a light-emitting unit provided in an embodiment of this application.

[0112] Figures 26A, 26B, 26C, 26D, 26E, 26F, 26G, 26H, 26I, and 26J are schematic flowcharts illustrating the steps involved in fabricating a transfer substrate assembly according to this application.

[0113] Figures 27A, 27B, 27C, 27D, 27E, 27F, 27G, 27H, 27I, 27J and 27K are schematic flowcharts of another step in preparing a transfer substrate assembly provided in this application;

[0114] Figures 28A, 28B, 28C and 28D are schematic flowcharts of another step in preparing a transfer substrate assembly provided in this application;

[0115] Figure 28E shows the transmittance curve of amorphous silicon with a hydrogen content of 31%.

[0116] Figure 29 is a schematic diagram of a light-emitting unit transfer process provided in this application;

[0117] Figure 30 is a schematic diagram of another light-emitting unit transfer process provided in this application;

[0118] Figure 31 is a schematic diagram of another light-emitting unit transfer process provided in this application;

[0119] Figure 32 is a schematic diagram of another light-emitting unit transfer process provided in this application;

[0120] Figure 33 is a cross-sectional structural diagram of a chip substrate provided in an embodiment of this application;

[0121] Figures 34 and 35 are schematic diagrams of a transfer substrate assembly fabrication process provided in some embodiments;

[0122] Figures 36 and 37 are schematic diagrams of a light-emitting unit transfer process provided in some embodiments;

[0123] Figures 38 and 39 are schematic diagrams of a light-emitting unit transfer process provided in an embodiment of this application. Detailed Implementation

[0124] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in further detail below with reference to the accompanying drawings.

[0125] Please refer to Figure 1, which is a schematic diagram of a laser mass transfer process. The laser mass transfer process may include chip manufacturing, a first transfer, and a second transfer. Chip manufacturing refers to manufacturing light-emitting units 02 on the original substrate 01; the first transfer refers to transferring the light-emitting units 02 from the original substrate 01 to the substrate 03 of the transfer substrate; the second transfer refers to transferring the light-emitting units 02 from the transfer substrate to the target substrate or receiving substrate (such as a driving backplane 05 or a mid-mount substrate). Generally, a mask 07 is required, and the mask 07 has corresponding cutout areas 08. The laser irradiates the release layer 04 through the cutout areas 08. The target substrate may have electrical connection structures corresponding to the light-emitting units 02, such as pads 06.

[0126] The transfer substrate includes a substrate 03 and a release layer 04, which are used to transfer the light-emitting unit 02. The entire transfer substrate after receiving the light-emitting unit 02 can be referred to as a transfer substrate assembly.

[0127] The structure of a transfer substrate assembly generally includes a substrate 03, a release layer 04, and a light-emitting unit 02. The release layer 04 is made of an organic photosensitive material, such as a fluorine coating, silicone resin, water-soluble adhesive (e.g., polyvinyl alcohol), or polyimide. The release layer 04 also serves to connect the light-emitting unit 02. When a laser beam irradiates the release layer 04 at the location corresponding to the light-emitting unit 02 to be transferred, the corresponding portion of the release layer 04 loses its adhesiveness or vaporizes directly, thereby transferring the light-emitting unit 02 onto the target substrate (e.g., a driving backplate 05).

[0128] Currently, commonly used photosensitive materials are relatively expensive. The high cost of photosensitive materials, such as photosensitizers and photoresponsive polymers, is due to the complex synthesis process of their photosensitive groups (e.g., o-nitrobenzyl) and the need for light-protective storage.

[0129] Furthermore, when organic photosensitive materials are dissociated by laser irradiation, carbon elements in the organic materials will be deposited into the light-emitting unit O2, resulting in carbon black residue on the surface of the light-emitting unit O2. This affects subsequent manufacturing processes and requires additional processes to remove the carbon black residue, leading to increased costs and reduced transfer efficiency.

[0130] This application provides a transfer substrate for transferring multiple light-emitting units. The transfer substrate includes a substrate 001, a release layer 002, and a first connecting layer 003. The first connecting layer 003 is located on the side of the release layer 002 away from the substrate 001 and is used to connect the multiple light-emitting units 004. Optionally, the first connecting layer 003 can be an adhesive to achieve interconnection with the light-emitting units 004. Optionally, the first connecting layer 003 is a material transparent to the wavelength of the dissociation laser to allow the dissociation laser to pass through. Optionally, the first connecting layer 003 can include transparent adhesive materials such as epoxy resin and acrylic adhesive.

[0131] This application provides a transfer substrate assembly. Please refer to Figures 2 to 5. Figure 2 is a structural schematic diagram of the transfer substrate assembly provided in this application embodiment, Figure 3 is a top view of Figure 2, Figure 4 is a structural schematic diagram of another transfer substrate assembly provided in this application embodiment, and Figure 5 is a top view of Figure 4. The transfer substrate assembly 000 may include: a substrate 001, a release layer 002, a first connection layer 003, and a plurality of light-emitting units 004.

[0132] Release layer 002 is located on one side of substrate 001.

[0133] The first connecting layer 003 is located on the side of the release layer 002 away from the substrate 001.

[0134] Multiple light-emitting units 004 are located on the side of the first connecting layer 003 away from the substrate 001, and the light-emitting side of the light-emitting unit 004 faces the substrate 001.

[0135] The release layer 002 is an inorganic layer that may include silicon, and the release layer 002 is an inorganic layer that will dissociate under the irradiation of a laser of a preset wavelength.

[0136] In this embodiment, the release layer is an inorganic layer that may include silicon. The light-emitting unit is bonded together by the first connecting layer. When the inorganic release layer is detached by laser, it does not produce carbon, meaning there is no carbon black residue. Furthermore, the inorganic release layer is less expensive, and since it does not produce carbon black residue after laser detachment, no additional processing is required to remove the residue, thus reducing the cost of mass transfer processes.

[0137] For example, amorphous silicon can be dissociated by a laser of a specific wavelength with a certain energy density and can be used as the aforementioned release layer 002.

[0138] For example, polycrystalline silicon can be transformed into amorphous silicon through laser processing, and the transformed amorphous silicon can be dissociated by laser. In the process of laser processing to transform into amorphous silicon, the energy density of the laser is low, while in the process of amorphous silicon dissociation, the energy density of the laser is high.

[0139] Both amorphous silicon and polycrystalline silicon can be formed on substrate 001 using plasma-enhanced chemical vapor deposition (PECVD). PECVD of silicon is a very mature process, and the material cost of depositing amorphous silicon or polycrystalline silicon on a 4-inch substrate is less than 1 yuan per piece. Therefore, the cost of the transfer substrate assembly 000 provided in this embodiment is lower than the cost of transfer substrate assemblies using organic photosensitive materials currently employed.

[0140] In some possible implementations, the release layer 002 may include an amorphous silicon substrate and non-metallic elements doped within the amorphous silicon substrate. The amorphous silicon has a high absorption coefficient for light with wavelengths below 400 nanometers, and at a given thickness, its transmittance is less than 1%. For example, the laser wavelength could be 248 nanometers, 308 nanometers, or 343 nanometers.

[0141] For example, the non-metallic element can be at least one of hydrogen, oxygen, nitrogen and carbon. The embodiments of this application use hydrogen as an example, but it is not excluded that other non-metallic elements may also have the same technical effects as hydrogen.

[0142] In this embodiment, the release layer 002 can be made of amorphous silicon doped with non-metallic elements. The doping with non-metallic elements can affect the energy density required for laser dissociation of amorphous silicon. As shown in the table below, the laser energy density required for dissociating amorphous silicon is negatively correlated with the doping content of different amounts of hydrogen.

[0143] Thus, by doping with non-metallic elements, the laser energy density required for the dissociation and release layer 002 can be adjusted, thereby reducing the requirements for equipment hardware.

[0144] It should be noted that, in the embodiments of this application, the hydrogen content refers to the mass percentage of hydrogen in the release layer 002, which can be measured using an X-ray diffractometer or the like.

[0145] For example, in the embodiments of this application, the hydrogen content can be in the range of 1% to 35%. Currently, hydrogen doping achieved using semiconductor devices can achieve a hydrogen content of less than 35%.

[0146] In some possible implementations, please refer to Figures 6 to 9. Figure 6 is a schematic diagram of the grouping of the release layer provided in the embodiment of this application. Figure 7 is a schematic diagram of another grouping of the release layer provided in the embodiment of this application. Figure 8 is a schematic diagram of yet another grouping of the release layer provided in the embodiment of this application. Figure 9 is a schematic diagram of yet another grouping of the release layer provided in the embodiment of this application. The release layer 002 may include: a plurality of main release parts 0021, and one main release part 0021 corresponds to at least one light-emitting unit 004.

[0147] The orthographic projection of the light-emitting unit 004 onto the substrate 001 overlaps with the orthographic projection of the corresponding main release part 0021 onto the substrate 001.

[0148] For example, as shown in FIG6, one main release unit 0021 corresponds to one light-emitting unit 004; as shown in FIG7 to FIG9, one main release unit 0021 corresponds to multiple light-emitting units 004.

[0149] In some possible implementations, multiple main release units 0021 are divided into at least two groups of main release units, and multiple light-emitting units 004 are divided into at least two groups of light-emitting units, with at least two groups of main release units corresponding to at least two groups of light-emitting units.

[0150] The release layer 002 contains hydrogen. For the two different main release sections 0021, the hydrogen content in one main release section differs from that in the other. For different main release sections 0021 within the same transfer substrate assembly 000, for any one set of main release sections 0021, an amorphous silicon layer with the corresponding hydrogen content can be deposited on the substrate 001 via PECVD. Subsequently, the corresponding amorphous silicon layer is patterned to form the main release section 0021. By repeating the above process steps, multiple sets of main release sections 0021 can be formed on the substrate 001.

[0151] For example, when laser dissociation is performed on a main release section 0021 with a certain hydrogen content, in order to prevent other main release sections 0021 from not being dissociated, for two different sets of main release sections, as shown in the table above, the difference between the hydrogen content in one set of main release sections and the hydrogen content in the other set of main release sections is greater than or equal to 3%.

[0152] For ease of description, in the embodiments of this application, the different hydrogen content in the main release section 0021 is illustrated in Figures 6 to 9 with different filling methods.

[0153] As shown in Figures 6 to 9, taking the division of multiple main release sections 0021 into three groups as an example, the main release sections 002a, 002b, and 002c can be included. Each group of main release sections can include at least two main release sections 0021. The at least two main release sections 0021 within the same group can be arranged in the same layer, made of the same material, and have the same hydrogen content. Furthermore, the at least two main release sections 0021 can be connected together.

[0154] For example, each light-emitting unit 004 in the same group of light-emitting units is used to emit light of the same color; for two different groups of light-emitting units 004, the color of the light emitted by one group of light-emitting units is different from the color of the light emitted by the other group of light-emitting units.

[0155] For example, the group of light-emitting units corresponding to the third group of main release units 002a is red light-emitting units, the group of light-emitting units corresponding to the fourth group of main release units 002b is green light-emitting units, and the group of light-emitting units corresponding to the fifth group of main release units 002c is blue light-emitting units.

[0156] Another example is Figure 10, which is a schematic diagram of the partitioning of the release layer provided in the embodiment of this application. The transfer substrate assembly 000 has at least two partitions. Each main release part 0021 in the same group of main release parts is located in the same partition. Each main release part 0021 in the same group of main release parts is disposed in the same layer and has the same material and the same hydrogen content.

[0157] For example, the transfer substrate assembly 000 has two partitions, namely a first partition 020a and a second partition 020b, wherein the first partition 020a is located in the middle of the second partition 020b. For example, in Figure 10, the area corresponding to the four light-emitting units 004 in the middle is the first partition 020a, and the area corresponding to the light-emitting units 004 outside the first partition 020a is the second partition 020b. In semiconductor manufacturing, the chip quality is relatively high in the central part. In some products with high quality requirements, the light-emitting units in the middle area of ​​multiple transfer substrate assemblies 000 can be transferred to the same target substrate.

[0158] Alternatively, if the number of light-emitting units 004 on the transfer substrate assembly 000 is greater than the number of light-emitting units 004 required on the target substrate, then some of the light-emitting units 004 on the transfer substrate assembly 000 can be transferred to the target substrate.

[0159] Another example is that each light-emitting unit 004 in the same group of light-emitting units 004 has the same size, while for two different groups of light-emitting units 004, the size of one group of light-emitting units 004 is different from the size of the other group of light-emitting units 004.

[0160] Optionally, the size can be a specific size or a size range. For example, the size of each light-emitting unit 004 in the same group of light-emitting units 004 is 10 μm, or the size of each light-emitting unit 004 in the same group of light-emitting units 004 belongs to a small size range. The small size range is 3-10 μm. That is, the embodiments of this application can transfer different light-emitting units 004 in different batches according to the size of the light-emitting unit 004.

[0161] Optionally, the size of the light-emitting unit 004 can refer to the diameter of the light-emitting unit 004 or the diameter of the circle in which the light-emitting unit 004 is located.

[0162] In some possible implementations, as shown in Figures 8 and 9, the main release part 0021 can be strip-shaped, with one main release part 0021 corresponding to at least two light-emitting units 004, and the extension direction of the main release part 0021 is parallel to the arrangement direction of the corresponding at least two light-emitting units 004.

[0163] For example, the light-emitting units 004 on the same strip-shaped main release section 0021 can have the same light-emitting color. In this way, at least one row or at least one column of light-emitting units 004 can be transferred to the target substrate in one transfer.

[0164] In some possible implementations, as shown in Figures 6 and 7, the main release portion 0021 can be block-shaped, and the orthographic projection of the main release portion 0021 onto the substrate 001 covers the orthographic projection of at least one corresponding light-emitting unit 004 onto the substrate 001. That is, one or more light-emitting units 004 can be corresponding to the block-shaped main release portion 0021.

[0165] In some possible implementations, please refer to Figures 11A and 11B. Figure 11A is a planar structural schematic diagram of the auxiliary connection part provided in the embodiment of this application, and Figure 11B is a cross-sectional structural schematic diagram of the auxiliary connection part provided in the embodiment of this application. When a main release part 0021 corresponds to at least two light-emitting units 004, the main release part 0021 may include: at least two release blocks 0023, and an auxiliary connection part 0022 for connecting the at least two release blocks 0023.

[0166] At least two release blocks 0023 correspond one-to-one with at least two light-emitting units 004, and the orthogonal projection of the light-emitting unit 004 on the substrate 001 is located within the orthogonal projection of the corresponding release block 0023 on the substrate 001.

[0167] The release layer 002 contains hydrogen, and in the same main release section 0021, the hydrogen content of each release block 0023 is the same as the hydrogen content of the auxiliary connection section 0022.

[0168] In some possible implementations, referring to Figure 11B, the thickness of the auxiliary connecting portion 0022 is no greater than the thickness of the release block 0023. Optionally, the thickness of the auxiliary connecting portion 0022 is equal to the thickness of the release block 0023. Optionally, the thickness of the auxiliary connecting portion 0022 is less than the thickness of the release block 0023.

[0169] As shown in Figure 11B, the first connecting layer 003 can be patterned, for example, by an etching process. During the etching process of the first connecting layer 003 located between the light-emitting units 004, the thickness of the auxiliary connecting portion 0022 located between the light-emitting units 004 may become thinner due to over-etching or other reasons. Therefore, the thickness of the auxiliary connecting portion 0022 may be less than the thickness of the release block 0023.

[0170] In some possible implementations, referring to Figures 2 and 3, the release layer 002 can be a continuously distributed film structure. That is, the release layer 002 can be a whole layer, and the light-emitting unit 004 can be selectively released using a mask or mask layer, or it can be a whole layer of release.

[0171] In some possible implementations, referring to Figures 2 and 4, the first connection layer 003 may include: a plurality of first connection blocks 003a, and a plurality of light-emitting units 004 corresponding to the plurality of first connection blocks 003a. The first connection blocks 003a are used to connect one-to-one with the plurality of light-emitting units.

[0172] The side of the light-emitting unit 004 facing the substrate 001 is connected to the corresponding first connecting block 003a.

[0173] For example, for any light-emitting unit 004, the light-emitting unit 004 has a first electrode and a second electrode, one of which is a positive electrode and the other is a negative electrode; the first electrode and the second electrode of the light-emitting unit 004 are both located on the side of the light-emitting unit 004 away from the substrate 001, and a corresponding first connecting block 003a is attached to the side of the light-emitting unit 004 facing the substrate 001.

[0174] In some possible implementations, the thickness of the release layer 002 in the direction perpendicular to the substrate 001 is in the range of 100 nanometers to 150 nanometers.

[0175] Since the transmittance of the film to laser light is related to the thickness of the film, an excessively thin release layer 002 has high transmittance to laser light, which is not conducive to absorbing laser energy. An excessively thick release layer 002 may not be able to fully dissociate, requiring longer laser irradiation or leaving some residue on the first connecting layer 003, affecting the subsequent process of removing the first connecting layer 003.

[0176] In some possible implementations, the transmittance of the substrate 001 to the preset light is greater than or equal to 50%, and / or the transmittance of the release layer 002 to the preset light is less than or equal to 10%.

[0177] The wavelength of the preset light is in the range of 300nm to 400nm.

[0178] For example, the substrate 001 can be a quartz glass substrate. Compared with silicate glass substrates, quartz glass substrates have higher transmittance to ultraviolet light. In this way, the laser can pass through the substrate 001 and irradiate the release layer 002, which is beneficial to improve the utilization rate of the laser and also avoids the substrate 001 being damaged by the laser.

[0179] For example, when the release layer 002 includes an amorphous silicon substrate and has a thickness in the range of 100 nanometers to 150 nanometers, it has very low ultraviolet transmittance, with an absorption coefficient of 10. 5 cm -1 Amorphous silicon has a transmittance of less than 10% for ultraviolet light and an absorption coefficient of 10. 6 cm -1 The amorphous silicon has a UV transmittance of less than 1%.

[0180] In this way, by using a high-transmittance substrate 001 and a low-transmittance release layer 002, the utilization rate of the laser can be improved, the dissociation rate can be increased, and ultimately the transfer efficiency of the transfer substrate assembly 000 to the light-emitting unit 004 can be improved.

[0181] In summary, the transfer substrate assembly provided in this application includes a substrate, a release layer, a first connecting layer, and multiple light-emitting units. An inorganic layer containing silicon is used as the release layer, and the light-emitting units are bonded to the release layer using the first connecting layer. When it is necessary to transfer the light-emitting units, the release layer in the transfer substrate assembly is irradiated with a laser to separate the light-emitting units from the substrate. Since the inorganic release layer has lower cost, and after the inorganic release layer is separated by laser, it does not produce residues like carbon black, eliminating the need for additional processes to remove residues and reducing the cost of laser mass transfer processes.

[0182] Please refer to Figure 12, which is a cross-sectional structural diagram of another transfer substrate provided in an embodiment of this application. In the other transfer substrate provided in this embodiment, at least two sets of main release portions include a first set of main release portions and a second set of main release portions. The hydrogen content in the first set of main release portions is different from the hydrogen content in the second set of main release portions.

[0183] The release layer 002 also includes a plurality of sub-release parts 0022, each sub-release part 0022 corresponding to at least one light-emitting unit 004. Optionally, this embodiment of the present disclosure is illustrated by taking the example of one sub-release part 0022 corresponding to one light-emitting unit 004.

[0184] The secondary release section 0022 is located on the side of the first group of main release sections away from the substrate 001, and the secondary release section 0022 has the same hydrogen content as the second group of main release sections, and the secondary release section 0022 has the same thickness as the second group of main release sections.

[0185] It is understood that in the embodiments of this application, the first group of main release units and the second group of main release units refer to any two groups of main release units. For example, in FIG9, the first group of main release units and the second group of main release units can be the third group of main release units 002a and the fourth group of main release units 002b, or the first group of main release units and the second group of main release units can be the third group of main release units 002a and the fifth group of main release units 002c, or the first group of main release units and the second group of main release units can be the fourth group of main release units 002b and the fifth group of main release units 002c.

[0186] When the first and second main release sections are the third main release section 002a and the fourth main release section 002b, the release layer 002 further includes a first secondary release section 0122 located on the side of the third main release section 002a away from the substrate 001. The first secondary release section 0122 has the same hydrogen content as the fourth main release section 002b. The first secondary release section 0122 can be formed simultaneously with the fourth main release section 002b using the same process. In this case, the material of the first secondary release section 0122 is the same as the material of the fourth main release section 002b, and the thickness of the first secondary release section 0122 is the same as the thickness of the fourth main release section 002b.

[0187] When the first and second main release sections are the third main release section 002a and the fifth main release section 002c, the release layer 002 further includes a second secondary release section 0222 located on the side of the third main release section 002a away from the substrate. This second secondary release section 0222 has the same hydrogen content as the fifth main release section 002c. The second secondary release section 0222 can be formed simultaneously with the fifth main release section 002c using the same process. In this case, the material of the second secondary release section 0222 is the same as the material of the fifth main release section 002c, and the thickness of the second secondary release section 0222 is the same as the thickness of the fifth main release section 002c.

[0188] When the first and second main release sections are the fourth main release section 002b and the fifth main release section 002c, the release layer 002 further includes a third secondary release section 0322 located on the side of the fourth main release section 002b away from the substrate. This third secondary release section 0322 has the same hydrogen content as the fifth main release section 002c. This third secondary release section 0322 can be formed simultaneously with the fifth main release section 002c using the same process. In this case, the material of the third secondary release section 0322 is the same as the material of the fifth main release section 002c, and the thickness of the third secondary release section 0322 is the same as the thickness of the fifth main release section 002c.

[0189] In this embodiment of the application, when forming the main release section in the fourth main release section 002b, a first secondary release section 0122 may be formed simultaneously on the upper side of the third main release section 002a. When forming the fifth main release section 002c, a second secondary release section 0222 may be formed simultaneously on the upper side of the third main release section 002a, and a third secondary release section 0322 may be formed simultaneously on the upper side of the fourth main release section 002b.

[0190] It is understood that in the embodiments of this application, the hydrogen content in the main release part 0021 and the secondary release part 0222 corresponding to the same light-emitting unit 004 is different.

[0191] In some possible implementations, the thickness of the first connecting layer 003 between the release layer 002 corresponding to the first group of main release parts and the light-emitting unit 004 is less than the thickness of the first connecting layer 003 between the release layer 002 corresponding to the second group of main release parts and the light-emitting unit 004.

[0192] Optionally, when the first connection layer 003 includes a plurality of first connection blocks 003a, the thickness of the first connection block 003a corresponding to the first group of main release parts is less than the thickness of the first connection block 003a corresponding to the second group of main release parts.

[0193] For example, when the first group of main release parts and the second group of main release parts are the third group of main release parts 002a and the fourth group of main release parts 002b, the thickness of the first connecting block 003a corresponding to the third group of main release parts 002 is less than the thickness of the first connecting block 003a corresponding to the fourth group of main release parts 002b.

[0194] When the first group of main release parts and the second group of main release parts are the third group of main release parts 002a and the fifth group of main release parts 002c, the thickness of the first connecting block 003a corresponding to the third group of main release parts 002 is less than the thickness of the first connecting block 003a corresponding to the fifth group of main release parts 002c.

[0195] When the first group of main release parts and the second group of main release parts are the fourth group of main release parts 002b and the fifth group of main release parts 002c, the thickness of the first connecting block 003a corresponding to the fourth group of main release parts 002b is less than the thickness of the first connecting block 003a corresponding to the fifth group of main release parts 002c.

[0196] Optionally, the difference between the thickness of the first connecting block 003a corresponding to the first group of main release parts and the thickness of the first connecting block 003a corresponding to the second group of main release parts is equal to the thickness of the first group of main release parts.

[0197] For example, when the first group of main release parts and the second group of main release parts are the third group of main release parts 002a and the fourth group of main release parts 002b, the difference between the thickness of the first connecting block 003a corresponding to the third group of main release parts 002a and the thickness of the first connecting block 003a corresponding to the fourth group of main release parts 002b is the thickness of the third group of main release parts 002a.

[0198] When the first group of main release parts and the second group of main release parts are the third group of main release parts 002a and the fifth group of main release parts 002c, the difference between the thickness of the first connecting block 003a corresponding to the third group of main release parts 002a and the thickness of the first connecting block 003a corresponding to the fifth group of main release parts 002c is the thickness of the third group of main release parts 002a.

[0199] When the first group of main release parts and the second group of main release parts are the fourth group of main release parts 002b and the fifth group of main release parts 002c, the difference between the thickness of the first connecting block 003a corresponding to the fourth group of main release parts 002b and the thickness of the first connecting block 003a corresponding to the fifth group of main release parts 002c is the thickness of the fourth group of main release parts 002b.

[0200] In some possible implementations, the thickness ratio of the secondary release portion 0022 to the main release portion 0021 corresponding to the same light-emitting unit 004 is 0.8–1.2. That is, the thickness ratio of the main release portions 0021 between different light-emitting units 004 is 0.8–1.2. Optionally, the thickness ratio of the secondary release portion 0022 to the main release portion 0021 corresponding to the same light-emitting unit 004 is 1 or close to 1, that is, the secondary release portion 0022 and the main release portion 0021 corresponding to the same light-emitting unit 004 have the same thickness, and the thickness of the main release portions 0021 between different light-emitting units 004 is the same.

[0201] In some possible implementations, the thickness of the main release portion 0021 in the direction perpendicular to the substrate 001 is in the range of 100 nanometers to 150 nanometers.

[0202] It is understood that, in the embodiments of this application, the thickness of both the main release part 0021 and the secondary release part 0022 is in the range of 100 nanometers to 150 nanometers.

[0203] Please refer to Figure 13, which is a cross-sectional structural diagram of another transfer substrate provided in an embodiment of this application. As shown in Figure 13, the other transfer substrate provided in this embodiment further includes a second connecting layer 005. The second connecting layer 005 is located between the release layer 002 and the substrate 001, and is used to connect to the release layer 002 and the substrate 001 respectively. Optionally, the second connecting layer 005 can be an adhesive, thereby achieving connection to the release layer 002 and the substrate 001 respectively. Optionally, the second connecting layer 005 is a material transparent to the wavelength of the dissociation laser, so that the dissociation laser can pass through. Optionally, the second connecting layer 005 may include transparent adhesive materials such as epoxy resin and acrylic glue.

[0204] In some possible implementations, as shown in Figure 13, the second connection layer 005 includes a plurality of second connection blocks 005a, which are used to connect one-to-one with a plurality of main release parts 0021. That is, the second connection blocks 005a are connected to the main release parts 0021 and the substrate 001 respectively.

[0205] In some possible implementations, the thickness of the second connecting layer 005 between the release layer 002 corresponding to the first group of main release sections and the substrate 001 is less than the thickness of the second connecting layer 005 between the release layer 002 corresponding to the second group of main release sections and the substrate 001. The thickness of the first connecting layer 003 between the release layer 002 corresponding to the first group of main release sections and the substrate 001 is equal to the thickness of the first connecting layer 003 between the release layer 002 corresponding to the second group of main release sections and the substrate 001.

[0206] For example, when the first group of main release parts and the second group of main release parts are the third group of main release parts 002a and the fourth group of main release parts 002b, the thickness of the second connecting block 005a corresponding to the third group of main release parts 002a is less than the thickness of the second connecting block 005a corresponding to the fourth group of main release parts 002b. The thickness of the first connecting block 003a corresponding to the third group of main release parts 002a is equal to the thickness of the first connecting block 003a corresponding to the fourth group of main release parts 002b.

[0207] When the first and second main release units are the third main release unit 002a and the fifth main release unit 002c, respectively, the thickness of the second connecting block 005a corresponding to the third main release unit 002a is less than the thickness of the second connecting block 005a corresponding to the fifth main release unit 002c. The thickness of the first connecting block 003a corresponding to the third main release unit 002a is equal to the thickness of the first connecting block 003a corresponding to the fifth main release unit 002c.

[0208] When the first and second main release units are the fourth main release unit 002b and the fifth main release unit 002c, respectively, the thickness of the second connecting block 005a corresponding to the fourth main release unit 002b is less than the thickness of the second connecting block 005a corresponding to the fifth main release unit 002c. The thickness of the first connecting block 003a corresponding to the fourth main release unit 002b is equal to the thickness of the first connecting block 003a corresponding to the fourth main release unit 002b and the fifth main release unit 002c.

[0209] Please refer to Figure 14, which is a cross-sectional view of another transfer substrate provided in an embodiment of this application. As shown in Figure 14, the other transfer substrate in this embodiment includes a second connecting layer 005, which is located between the release layer 002 and the substrate 001. The release layer 002 is used to connect the light-emitting unit, that is, the release layer can be directly connected to the light-emitting unit 004. Optionally, the second connecting layer 005 can be connected to the light-emitting unit 004 using adhesive.

[0210] In this case, after the release layer 002 is released, the second connecting layer 005 also detaches from the light-emitting unit 002 along with the substrate 001. The light-emitting unit 002 is no longer connected to the adhesive, which eliminates the need for the process step of removing the adhesive on one side of the light-emitting unit 002.

[0211] In some possible implementations, the second connection layer 005 includes: a first part 0051 and a second part 0052.

[0212] The orthographic projection of the first part 0051 onto the substrate 001 is located outside the orthographic projection of the light-emitting unit 004 onto the substrate 001.

[0213] The second part 0052 is located between the surface of the light-emitting unit 004 near the substrate 001 and the substrate 001.

[0214] The thickness of the first part 0051 is greater than the thickness of the second part 0052.

[0215] In this embodiment, a release layer 002 can be formed directly on the upper side of the light-emitting unit 004 on the chip substrate, and an adhesive can be bonded to the release layer 002 to form a second connection layer, which facilitates the formation of a transfer substrate assembly.

[0216] In some possible implementations, as shown in Figure 14, the surface of the release layer 002 away from the substrate 001 is configured to be flush with the surface of the light-emitting unit 004 away from the substrate 001.

[0217] In the transfer substrate assembly of this application embodiment, since a portion of the surface of the release layer and the light-emitting unit are in direct contact with the original substrate 110, after removing the original substrate 110, the surface of the release layer 002 away from the substrate 001 is flush with the surface of the light-emitting unit 004 away from the substrate 001. It should be noted that the original substrate 110 can be, for example, a sapphire substrate, which can be removed by laser irradiation. Therefore, the surfaces of the release layer 002 and the sapphire substrate in contact, as well as the surfaces of the light-emitting unit 004 and the sapphire substrate in contact, may exhibit some undulations or uneven roughness due to process variations. Considering the impact of process variations on the surface, the surfaces of the release layer 002 and the light-emitting unit 004 away from the substrate 001 can still be considered as planes. It is understood that the release layer 002 is not dissociated during the laser irradiation process of removing the sapphire substrate.

[0218] This application embodiment also provides a method for transferring a light-emitting unit. Please refer to Figure 15, which is a schematic flowchart of the method for transferring a light-emitting unit provided in this application embodiment. The method for transferring a light-emitting unit may include:

[0219] Step S001: Provide at least one transfer substrate assembly and a receiving substrate. Alternatively, provide at least one transfer substrate and a receiving substrate. The transfer substrate can be any of the transfer substrates described in the above embodiments. The transfer substrate is connected to multiple light-emitting units. That is, the multiple light-emitting units are bonded to the release layer through a first connecting layer, or the multiple light-emitting units are connected to the release layer.

[0220] The transfer substrate assembly can be the transfer substrate assembly 000 described in any of the above embodiments, and the receiving substrate can be the driving backplane 100 or the intermediate substrate.

[0221] Step S002: Place the transfer substrate assembly on one side of the receiving substrate, so that the target light-emitting unit in the transfer substrate assembly is aligned with the target position of the receiving substrate. The target light-emitting unit is the light-emitting unit to be transferred.

[0222] For example, in this embodiment of the application, taking the receiving substrate as a driving backplate 100 as an example, the driving backplate 100 has pads 101, and solder or conductive adhesive layers can be disposed on the pads 101. The first electrode and the second electrode of the target light-emitting unit 004a can be electrically connected to the pads 101 of the driving backplate 100 through the solder or conductive adhesive layers. At this time, the target position is the pad 101 of the driving backplate 100, and the target position alignment can be the alignment of the electrode of the target light-emitting unit 004a with the pad 101. As another example, both the transfer substrate assembly 000 and the receiving substrate can be provided with alignment marks, and the target position alignment can be the alignment of the alignment marks.

[0223] Step S003: Perform laser dissociation on the portion of the release layer corresponding to the target light-emitting unit, so that the target light-emitting unit is separated from the transfer substrate assembly and transferred to the receiving substrate.

[0224] The wavelength of the laser can be below 400 nanometers, such as 248 nanometers, 308 nanometers, or 343 nanometers. After the laser irradiates the portion of the release layer 002 corresponding to the target light-emitting unit 004a, the release layer 002 between the adhesive block 003a on the target light-emitting unit 004a and the substrate 001 is disintegrated, and the adhesive block 003a separates from the substrate 001. In this way, the target light-emitting unit 004a is separated from the substrate 001.

[0225] For example, the laser can selectively irradiate the portion of the release layer 002 corresponding to the target light-emitting unit 004a, thereby achieving selective dissociation of the release layer 002.

[0226] When there are multiple transfer substrate assemblies 000, after each transfer substrate assembly 000 performs steps S002 to S003, the next transfer substrate assembly 000 is replaced, and steps S002 to S003 are repeated.

[0227] By employing the aforementioned transfer substrate assembly and light-emitting unit transfer method, mass laser transfer based on an inorganic emission layer can be achieved, thereby reducing the cost of mass laser transfer, and no carbon black residue remains on the transferred light-emitting unit. Furthermore, the aforementioned light-emitting unit transfer method also possesses the technical advantages of the transfer substrate assembly, which will not be repeated here.

[0228] In some possible implementations, after step S003 above, the method for transferring the light-emitting unit may further include:

[0229] Step S004: On the side of the receiving substrate with the light-emitting unit, the first connecting layer on the light-emitting unit is ashed to remove the first connecting layer.

[0230] Please refer to Figures 16 and 17. Figure 16 is a schematic diagram showing the effect of the transfer substrate assembly with an organic release layer after transfer, and Figure 17 is a schematic diagram showing the effect of the transfer substrate assembly provided in this embodiment after transfer. It can be seen that after transfer using the transfer substrate assembly with an organic release layer, carbon black remains on the surface of the light-emitting unit 02. After transfer using the transfer substrate assembly 000 provided in this embodiment, the light-emitting unit 004 has no carbon black residue on its surface after the first connecting layer 003 is removed. Therefore, no additional process is needed to remove the carbon black residue, improving transfer efficiency.

[0231] The following describes each step of the manufacturing method described above.

[0232] This application also provides a method for manufacturing a transfer substrate assembly. Referring to Figure 18, which is a schematic diagram of the process of manufacturing the transfer substrate assembly provided in this application, the method may include:

[0233] Step S101: Provide two temporary substrates and one chip substrate.

[0234] The temporary substrate includes: a substrate 001, a release layer 002 located on one side of the substrate 001, and a first connection layer 003 located on the side of the release layer 002 facing away from the substrate 001. The chip substrate includes: a primary substrate 110 and a plurality of light-emitting diodes formed on one side of the primary substrate 110. The two temporary substrates include: a first temporary substrate 000a and a second temporary substrate 000b. The release layers 002 in the first temporary substrate 000a and the second temporary substrate 000b may be the same or different.

[0235] Furthermore, the temporary substrate release layer 002, having multiple different main release portions 0021, forms multiple main release portions 0021 with different dissociation energy densities on the substrate 001 through multiple PECVD and patterning processes.

[0236] Step S102: Place the first temporary substrate on one side of the chip substrate, so that the light-emitting unit in the chip substrate is connected to the first connection layer of the temporary substrate.

[0237] The first connecting layer 003 of the first temporary substrate 000a can be bonded to the side of the light-emitting unit 004 that has the first electrode and the second electrode.

[0238] Step S103: Remove the original substrate 110 from the chip substrate. Optionally, the original substrate 110 may be a sapphire substrate.

[0239] For example, in an LED chip, there is a silicon nitride buffer layer between the original substrate 110 and the light-emitting unit 004. The gallium nitride buffer layer can be dissociated by laser, thereby separating the original substrate 110 from the light-emitting unit 004.

[0240] Step S104: Place the second temporary substrate on the side of the first temporary substrate facing the light-emitting unit, so that the light-emitting unit in the first temporary substrate is connected to the first connection layer of the second temporary substrate.

[0241] In step S102, the side of the light-emitting unit 004 with the first electrode and the second electrode faces the substrate 001 of the first temporary substrate 000a, meaning the light-emitting surface of the light-emitting unit 004 faces the substrate 001 of the first temporary substrate 000a. Therefore, the light-emitting unit 004 cannot be directly transferred to the receiving substrate using the first temporary substrate 000a. Thus, in this embodiment, the light-emitting unit 004 is flipped in step S104. This way, the side of the light-emitting unit 004 with the first electrode and the second electrode faces away from the substrate 001 of the second temporary substrate 000b, meaning the light-emitting surface of the light-emitting unit 004 can face away from the receiving substrate.

[0242] Step S105: Remove the first temporary substrate and perform ashing treatment on the portion of the first connection layer of the second temporary substrate that is not covered by the light-emitting unit to obtain a transfer substrate assembly, wherein the transfer substrate assembly includes the second temporary substrate and the light-emitting unit connected to the second temporary substrate.

[0243] For example, the entire surface of the first temporary substrate 000a facing away from the second temporary substrate 000b can be irradiated with a laser. This allows the release layer 002 of the first temporary substrate 000a to be detached, thereby separating the substrate 001 of the first temporary substrate 000a from the light-emitting unit 004. Subsequently, by ashing the first connecting layer 003, the portion of the first connecting layer 003 of the first temporary substrate 000a and the portion of the first connecting layer 003 of the second temporary substrate 000b not covered by the light-emitting unit 004 is removed. Finally, the transfer substrate assembly 000 provided in this embodiment is obtained.

[0244] In other words, the above step S001 can be used to obtain the transfer substrate assembly 000 by the above manufacturing method of the transfer substrate assembly.

[0245] Among some possible implementation methods, please refer to Figures 19 and 20. Figure 19 is a schematic diagram of one process of the light-emitting unit transfer method provided in the embodiment of this application, and Figure 20 is a schematic diagram of another process of the light-emitting unit transfer method provided in the embodiment of this application. When the release layer 002 is a continuously distributed film structure, step S003 above, which involves laser dissociation of the portion of the release layer corresponding to the target light-emitting unit, may include:

[0246] Step S201: Set the mask structure on the side of the transfer substrate assembly away from the receiving substrate, and the mask structure has a light-transmitting area.

[0247] Step S202: Under the cover of the mask structure, the entire surface of the transfer substrate assembly is irradiated with laser to dissociate the portion of the release layer corresponding to the target light-emitting unit.

[0248] In this case, the orthographic projection of the portion of the release layer 002 corresponding to the target light-emitting unit 004a onto the substrate 001 overlaps with the orthographic projection of the light-transmitting area onto the substrate 001.

[0249] For example, the mask structure described above can be a mask 300 or a film 200 having the aforementioned light-transmitting area 201; it can also be a mask layer, such as a photoresist layer or a hard mask layer, formed on the side of the transfer substrate assembly 000 opposite to the driving backplate 100. By patterning the mask layer, a mask structure with a light-transmitting area is obtained. The portion of the release layer 002 corresponding to the target light-emitting unit 004a is covered by the orthogonal projection of the light-transmitting area onto the substrate 001, meaning that the portion of the release layer 002 corresponding to the target light-emitting unit 004a will be laser-dissociated.

[0250] As shown in Figures 19 and 20, since the release layer 002 provided in this embodiment is a single layer, when it is necessary to transfer the target light-emitting unit 004a, it can be masked by using a corresponding mask 200, thereby achieving selective transfer of the light-emitting unit 004. In the above steps S201 to S202, for the multiple portions corresponding to the multiple light-emitting units 004 in the release layer 002, each portion does not need to be doped with different amounts of hydrogen; the hydrogen content doped in the entire release layer 002 can be the same.

[0251] In some possible implementation methods, please refer to Figures 21 and 22. Figure 21 is a schematic diagram of another process of transferring a light-emitting unit provided in an embodiment of this application, and Figure 22 is a schematic diagram of another process of transferring a light-emitting unit provided in an embodiment of this application. A plurality of main release parts 0021 are divided into at least two groups of main release parts, and a plurality of light-emitting units 004 may include at least two groups of light-emitting units. The at least two groups of main release parts correspond to the at least two groups of light-emitting units, for example, in a one-to-one correspondence. Among them, the energy density threshold of the laser when the main release parts of different groups are dissociated is different from each other. The energy density threshold of the laser when the main release parts are dissociated is the minimum energy density of the laser required for the main release parts to be dissociated.

[0252] For example, the release layer 002 contains hydrogen, and the hydrogen content of different groups of main release parts 0021 is different; at least two groups of main release parts 0021 may include: a first group of main release parts 0021a and a second group of main release parts 0021b, wherein the hydrogen content of the first group of main release parts 0021a is greater than the hydrogen content of the second group of main release parts 0021b.

[0253] In step S003 above, laser dissociation of the portion of the release layer corresponding to the target light-emitting unit may include:

[0254] Step S301: First, use a laser with a first energy density to irradiate the transfer substrate assembly to dissociate the first group of main release parts and transfer the target light-emitting unit corresponding to the first group of main release parts.

[0255] Step S302: Then, a laser with a second energy density is used to irradiate the transfer substrate assembly to dissociate the second group of main release parts and transfer the target light-emitting unit corresponding to the first group of main release parts.

[0256] Specifically, the first energy density is less than the second energy density, and the receiving substrate to which the target light-emitting unit corresponding to the first group of main release units is transferred may be the same as or different from the receiving substrate to which the target light-emitting unit corresponding to the second group of main release units is transferred. Furthermore, the first energy density is not less than the laser energy density threshold when the first group of main release units is dissociated, and the first energy density is less than the laser energy density threshold when the second group of main release units is dissociated; the second energy density is not less than the laser energy density threshold when the second group of main release units is dissociated.

[0257] In other words, in this embodiment of the application, at least two sets of target light-emitting units 004a on a transfer substrate assembly 000 can be transferred to at least one receiving substrate.

[0258] For example, as shown in Figures 21 and 22, the plurality of main release units 0021 may include: a first group of main release units 0021a, a second group of main release units 0021b, and a third group of main release units 0021c. The transfer substrate assembly 000 is irradiated with a laser of a first energy density to dissociate the first group of main release units 0021a; a laser of a second energy density is irradiated with the transfer substrate assembly 000 to dissociate the second group of main release units 0021b; and a laser of a third energy density is irradiated with the transfer substrate assembly 000 to dissociate the third group of main release units 0021c. The first energy density is less than the second energy density, and the second energy density is less than the third energy density.

[0259] Thus, in steps S301 to S302 above, laser irradiation of the transfer substrate assembly 000 can be used to irradiate the entire surface of the transfer substrate assembly 000. When it is necessary to release the light-emitting unit corresponding to the first group of main release parts 0021a, laser irradiation of the transfer substrate assembly 000 with the first energy density can be used. In this way, the second group of main release parts 0021b and the third group of main release parts 0021c will not be dissociated, and the corresponding light-emitting units will not be separated.

[0260] After the first set of main release units 0021a is dissociated, the light-emitting units on the transfer substrate assembly 000 can be transferred to another receiving substrate or to other areas of the receiving substrate. At this time, the transfer substrate assembly 000 can be irradiated with a laser of the second energy density to dissociate the second set of main release units 0021b. In this way, the third set of main release units 0021c will not be dissociated, and the corresponding light-emitting units will not separate.

[0261] As can be seen, by setting multiple sets of different main release sections 0021, the entire surface of the transfer substrate assembly 000 can be irradiated with a laser of corresponding energy density without the need for a mask 200. This allows for the selective separation of the light-emitting units on the transfer substrate assembly 000, which can then be transferred to the corresponding receiving substrate. This eliminates the need for a mask structure or optical elements to adjust the laser irradiation range, making the process more convenient.

[0262] Furthermore, when performing laser dissociation on a main release section 0021 with a certain hydrogen content, to prevent other main release sections 0021 with different hydrogen contents from remaining undissociated, the hydrogen content of multiple main release sections 0021 with different hydrogen contents can be distributed in a stepped manner as much as possible. For example, as shown in the table above (12%, 21%, 31%), the multiple main release sections 0021 can include: a first group of main release sections 0021a, a second group of main release sections 0021b, and a third group of main release sections 0021c. The hydrogen content of the first group of main release sections 0021a is 31%, the hydrogen content of the second group of main release sections 0021b is 21%, and the hydrogen content of the third group of main release sections 0021c is 12%. In this way, the laser energy density required to dissociate the above multiple main release sections 0021 also differs significantly, corresponding to approximately 300 mJ / cm². 2 400mJ / cm 2 With 500mJ / cm 2 .

[0263] In some possible implementations, the first group of main release units 0021a, the second group of main release units 0021b and the third group of main release units 0021c can correspond to the main release units 0021 in the third group of main release units 002a, the fourth group of main release units 002b and the fifth group of main release units 002c in Figures 6 to 9.

[0264] The first group of main release units 0021a and the second group of main release units 0021b mentioned above can also be the main release units 0021 located in the second partition 020b of the first partition 020a in Figure 10.

[0265] In some possible implementations, a portion of the light-emitting units 004 from multiple transfer substrate assemblies 000 can be transferred to the same receiving substrate. Selective transfer can be achieved using the aforementioned mask structure, or by using main release portions 0021 with different hydrogen content.

[0266] For example, please refer to Figures 23 to 25. Figure 23 is a schematic diagram of another process of transferring a light-emitting unit according to an embodiment of this application. Figure 24 is a schematic diagram of another process of transferring a light-emitting unit according to an embodiment of this application. Figure 25 is a schematic diagram of yet another process of transferring a light-emitting unit according to an embodiment of this application. The number of transfer substrate assemblies 000 can be multiple, and the multiple transfer substrate assemblies 000 may include: a first transfer substrate assembly 000a, a second transfer substrate assembly 000b, and a third transfer substrate assembly 000c. For one transfer substrate assembly 000, the light-emitting units 004 on the transfer substrate assembly 000 are used to emit light of the same color. The light emitted by the light-emitting units 004 on the first transfer substrate assembly 000a, the second transfer substrate assembly 000b, and the third transfer substrate assembly 000c are of different colors. The target light-emitting unit 004 on the first transfer substrate assembly 000a is the first target light-emitting unit 0041, the target light-emitting unit 004 on the second transfer substrate assembly 000b is the second target light-emitting unit 0042, and the target light-emitting unit 004 on the third transfer substrate assembly 000c is the third target light-emitting unit 0043.

[0267] The first transfer substrate assembly 000a, the second transfer substrate assembly 000b, and the third transfer substrate assembly 000c each include at least two sets of main release portions 0021.

[0268] For ease of description, in Figures 23 to 25, letters are filled in the light-emitting units to indicate that the emitted light colors of the light-emitting units on the first transfer substrate assembly 000a, the second transfer substrate assembly 000b, and the third transfer substrate assembly 000c are different. For example, the light-emitting unit 004 of the first transfer substrate assembly 000a is a red light-emitting unit, the light-emitting unit 004 of the second transfer substrate assembly 000b is a green light-emitting unit, and the light-emitting unit 004 of the third transfer substrate assembly 000c is a blue light-emitting unit.

[0269] In steps S002-S003 above, placing the transfer substrate assembly on one side of the receiving substrate, aligning the target light-emitting unit in the transfer substrate assembly with the target position on the receiving substrate, and performing laser dissociation on the portion of the release layer corresponding to the target light-emitting unit, so that the target light-emitting unit is separated from the transfer substrate assembly and transferred to the receiving substrate, may include: a first set of transfer processes, which may include:

[0270] Step S401: Transfer the target light-emitting units corresponding to a group of main release parts on the first transfer substrate assembly, the target light-emitting units corresponding to a group of main release parts on the second transfer substrate assembly, and the target light-emitting units corresponding to a group of main release parts on the third transfer substrate assembly to the receiving substrate respectively. After the first group transfer process, the light-emitting units corresponding to other groups of main release parts on the first transfer substrate assembly remain on the first transfer substrate assembly, the light-emitting units corresponding to other groups of main release parts on the second transfer substrate assembly remain on the second transfer substrate assembly, and the light-emitting units corresponding to other groups of main release parts on the third transfer substrate assembly remain on the third transfer substrate assembly.

[0271] As shown in Figure 23, the first transfer substrate assembly 000a can be connected to the receiving substrate first, and the first target light-emitting unit 0041 in the first transfer substrate assembly 000a can be selectively transferred. Specifically, at least one row or at least one column of the first target light-emitting unit 0041 can be transferred to the receiving substrate at once.

[0272] As shown in Figure 24, the second transfer substrate assembly 000b can be connected to the receiving substrate to selectively transfer the second target light-emitting unit 0042 in the second transfer substrate assembly 000b. Specifically, at least one row or at least one column of the second target light-emitting units 0042 can be transferred to the receiving substrate at once.

[0273] As shown in Figure 25, the third transfer substrate assembly 000c can be connected to the receiving substrate last, and the third target light-emitting unit 0043 in the third transfer substrate assembly 000c can be selectively transferred. Specifically, at least one row or at least one column of the third target light-emitting unit 0043 can be transferred to the receiving substrate at once.

[0274] In this way, the light-emitting units 004 that need to be transferred on multiple transfer substrate assemblies 000 can be transferred to the same receiving substrate. Each transfer substrate assembly 000 can be equipped with only light-emitting units 004 of the same color, simplifying the process.

[0275] In some possible implementations, in steps S002-S003 above, the transfer substrate assembly is placed on one side of the receiving substrate, the target light-emitting unit in the transfer substrate assembly is aligned with the target position of the receiving substrate, and the portion of the release layer corresponding to the target light-emitting unit is laser-dissociated so that the target light-emitting unit is separated from the transfer substrate assembly and transferred to the receiving substrate. This may include a second transfer process, which is performed after the target light-emitting unit corresponding to a set of main release portions on the first transfer substrate assembly is transferred to the receiving substrate in step S4001 above.

[0276] The second transfer process may include:

[0277] Step S402: Transfer the target light-emitting unit corresponding to another set of main release parts on the first transfer substrate assembly to another receiving substrate.

[0278] Step S403: Transfer the target light-emitting unit corresponding to another set of main release parts on the second transfer substrate assembly to another receiving substrate.

[0279] Step S404: Transfer the target light-emitting unit corresponding to another set of main release parts on the third transfer substrate assembly to another receiving substrate.

[0280] In steps S402 to S404, the transfer to another receiving substrate in the three steps can be the same receiving substrate or a different receiving substrate.

[0281] In other words, step S402 can be performed immediately after step S401, where the first target light-emitting unit 0041 in the first transfer substrate assembly 000a is transferred, thereby transferring other light-emitting units in the first transfer substrate assembly 000a to another receiving substrate. During the execution of step S402, the transfer of target light-emitting units on the second transfer substrate assembly 000b and the third transfer substrate assembly 000c in step S401 will not be affected.

[0282] Similarly, step S403 can be performed immediately after step S401, where the second target light-emitting unit 0042 in the second transfer substrate assembly 000b is transferred, thereby transferring other light-emitting units in the second transfer substrate assembly 000b to another receiving substrate. During the execution of step S403, the transfer of the target light-emitting unit on the third transfer substrate assembly 000c in step S401 will not be affected.

[0283] Furthermore, in step S401 above, after the third target light-emitting unit 0043 on the third transfer substrate assembly 000c is transferred, other light-emitting units in the third transfer substrate assembly 000c can also be transferred to another receiving substrate.

[0284] In summary, the light-emitting unit transfer method provided in this application embodiment can achieve low-cost mass laser transfer by utilizing an inorganic release layer; on the other hand, it can form different main release sections by doping with different amounts of hydrogen, thereby selectively transferring target light-emitting units on the transfer substrate assembly without the need for a mask.

[0285] It should be noted that, in one example, after the light-emitting unit 004 on the chip substrate is transferred to the substrate 001, since the electrodes of the light-emitting unit 004 are away from the original substrate 110 of the chip substrate, in the transfer substrate assembly, the electrodes of the light-emitting unit 004 are away from the substrate 001, and the light-emitting side of the light-emitting unit 004 faces the substrate 001.

[0286] In another example, the light-emitting unit 004 on the chip substrate can be transferred to one side of an intermediate substrate. The intermediate substrate includes an intermediate substrate and a release layer 002 and a first connection layer 003 sequentially disposed on one side of the intermediate substrate in a direction away from the intermediate substrate. Then, the light-emitting unit on the intermediate substrate is transferred to a first temporary substrate using the above transfer method. The first temporary substrate includes a substrate 001 and a release layer 002 and a first connection layer 003 sequentially stacked on one side of the substrate 001 in a direction away from the substrate 001. In this case, the electrodes of the light-emitting unit 004 face the substrate 001, and the light-emitting side of the light-emitting unit faces away from the substrate 001.

[0287] As described above, the embodiments of this application can adjust the orientation of the electrodes or the light-emitting side of the light-emitting unit through multiple transfers, thereby enabling the light-emitting unit to be transferred to different receiving substrates. For example, when the receiving substrate is a color conversion substrate, the electrodes of the light-emitting unit 004 face away from the receiving substrate, and the light-emitting side faces the receiving substrate. When the receiving substrate is a driving backplate, the electrodes of the light-emitting unit 004 face the receiving substrate, and the light-emitting side faces away from the receiving substrate.

[0288] This application also provides a method for preparing a transfer substrate assembly.

[0289] In some possible implementations, please refer to Figures 26A, 26B, 26C, 26D, 26E, 26F, 26G, 26H, 26I, and 26J, which are schematic flowcharts of a step process for preparing a transfer substrate assembly provided in this application.

[0290] As shown in Figures 26A, 26B, 26C, 26D, 26E, 26F, 26G, 26H, 26I, and 26J, the method for preparing a transfer substrate assembly provided in this application includes the following steps:

[0291] Step S01: As shown in FIG26A, a first main release material layer 211 is formed on one side of the substrate 001, and the first main release material layer 211 is patterned as shown in FIG26B to form a main release part 0021, for example, forming a third set of main release parts 002a.

[0292] Step S02, as shown in FIG26C, a second main release material layer 212 is formed, and the second main release material layer 212 is patterned, as shown in FIG26D, to form a main release portion 0021, for example, forming a fourth group of main release portions 002b. Optionally, considering that the thickness of the main release portion 0021 or the second main release material layer 212 is relatively thin, during the patterning process, the first group of main release portions 002a in the lower layer may be etched due to over-etching, further resulting in the thickness of the first main release portion 002a being even thinner or even the first main release portion 002a being completely etched, thereby affecting the release effect. Therefore, in this embodiment of the application, while forming the fourth group of main release portions 002b, a secondary release portion 0022 can be retained on the upper side of the third group of main release portions 002a.

[0293] Step S03, as shown in FIG26E, forms a third main release material layer 213 and patterns the third main release material layer 213, as shown in FIG26F, to form a main release portion 0021, for example, forming a fifth group of main release portions 002c. Similarly, to avoid the lower main release portion 0021 or sub-release portion 0022 being etched due to over-etching, this embodiment of the application can form a fifth group of main release portions 002c while simultaneously forming a sub-release portion 0022 above the sub-release portion 0022 above the third group of main release portions 002a, and a sub-release portion 0022 above the fourth group of main release portions 002b. By repeating the above steps, multiple groups of main release portions 0021 and their corresponding sub-release portions 0022 can be obtained.

[0294] Step S04: As shown in Figure 26G, a chip substrate is obtained. The chip substrate includes: a raw substrate 110 and a plurality of light-emitting units 004 formed on one side of the raw substrate 110.

[0295] Step S05, as shown in Figure 26H, the substrate obtained in step S03 is fixedly connected to the chip substrate in step S04 through the first connecting material layer 031.

[0296] Step S06, as shown in Figure 26I, remove the original substrate 110 from the chip substrate.

[0297] Step S07, as shown in Figure 26J, the first connecting material layer 031 is etched to obtain the first connecting layer 003 or multiple first connecting blocks 003a, thereby obtaining the transfer substrate assembly.

[0298] In the transfer substrate assembly obtained in the embodiments of this application, the hydrogen content of different main release sections is different. For example, the hydrogen content in the first group of main release sections 002a, the second group of main release sections 002b, and the third group of main release sections 002c decreases from high to low, i.e., the hydrogen content of the first group of main release sections 002a is the highest, and the hydrogen content of the third group of main release sections 002c is the lowest. The dissociation energy corresponding to the first group of main release sections 002a is the lowest, and the dissociation energy corresponding to the third group of main release sections 002c is the highest. Therefore, during the whole-area scanning process, when the light-emitting unit 004 corresponding to the first group of main release sections 002a falls off, the light-emitting units 004 corresponding to the second group of main release sections 002b and the third group of main release sections 002c will not fall off. When the light-emitting unit 004 corresponding to the second group of main release sections 002b falls off, the light-emitting units 004 corresponding to the third group of main release sections 002c will not fall off. This method can handle whole-area scanning and improves the efficiency of transfer.

[0299] In some possible implementations, please refer to Figures 27A, 27B, 27C, 27D, 27E, 27F, 27G, 27H, 27I, 27J and 27K, which are schematic flowcharts of another step process for preparing a transfer substrate assembly provided in this application.

[0300] Another method for preparing a transfer substrate assembly provided in this application includes the following steps:

[0301] Step S11: Form a third temporary substrate, as shown in FIG27A. The third temporary substrate includes a first temporary substrate 006 and a first temporary release layer 214, a third main release material layer 213, a second main release material 212, and a first main release material layer 211, which are sequentially stacked on one side of the first temporary substrate 006 and in a direction away from the first temporary substrate 006. Step S12: As shown in FIG27B, fix the chip substrate to the third temporary substrate in step S11 through a first connecting material layer 031.

[0302] Step S13, as shown in Figure 27C, remove the original substrate 110 from the chip substrate.

[0303] Step S14: Form a fourth temporary substrate. As shown in FIG27D, the fourth temporary substrate includes a second temporary substrate 007 and a second temporary release layer 216 and a temporary connection layer 215 that are stacked sequentially on one side of the second temporary substrate 007 and in a direction away from the second temporary substrate 007.

[0304] Step S15, as shown in Figure 27E, the entire substrate after removing the original substrate 110 in step S13 is fixedly connected to the fourth temporary substrate in step S14.

[0305] Step S16, as shown in Figure 27F, remove the first temporary release layer 214 and the first temporary substrate 006.

[0306] Step S17: As shown in Figure 27G, the first main release material layer 211, the second main release material layer 212 and the third main release material layer 214 are graphically represented to obtain each main release part 0021 and sub-release part 0022.

[0307] Step S18: Form a fifth temporary substrate, as shown in FIG27H. The fifth temporary substrate includes a substrate 001 and a second connecting material layer 051 located on one side of the substrate 001.

[0308] Step S19, as shown in Figure 27I, fix the entire substrate from step S17 and the fifth temporary substrate from step S18 together.

[0309] Step S20, as shown in Figure 27J, remove the second temporary release layer 216 and the second temporary substrate 007.

[0310] Step S21, as shown in Figure 27K, the temporary connection layer 215, the first connection material layer 031 and the second connection material layer 051 are patterned to obtain the transfer substrate assembly.

[0311] Optionally, the first temporary release layer 214 can be amorphous silicon containing hydrogen. The second temporary release layer 216 can also be amorphous silicon containing hydrogen.

[0312] The hydrogen content in the first temporary release layer 214 is greater than that in the second temporary release layer 216, and the hydrogen content in the second temporary release layer 216 is greater than that in any one of the first main release material layer 211, the second main release material layer 212, and the third main release material layer 214.

[0313] In this case, the laser energy threshold required for the dissociation of the first temporary release layer 214 is less than the laser energy required for the dissociation of the second temporary release layer 216, and the laser energy required for the dissociation of the second temporary release layer 216 is less than the laser energy required for the dissociation of any one of the first main release material layer 211, the second main release material layer 212, and the third main release material layer 214.

[0314] In step S16, removing the first temporary release layer 214 and the first temporary substrate 006 includes: irradiating the first temporary release layer 214 with a laser of third energy density to dissociate the first temporary release layer 214, thereby removing the first temporary release layer 214 and the first temporary substrate 006.

[0315] In step S20, removing the second temporary release layer 216 and the second temporary substrate 007 includes: irradiating the second temporary release layer 216 with a laser of the fourth energy density to dissociate the second temporary release layer 216, thereby removing the second temporary release layer 216 and the second temporary substrate 007.

[0316] Among them, the third energy density is less than the fourth energy density, the fourth energy density is less than the energy density threshold, and the energy density threshold is the minimum energy density of the laser required for the main release part to be dissociated.

[0317] Furthermore, the hydrogen content in the first main release material layer 211, the second main release material layer 212, and the third main release material layer 214 is different. Optionally, the hydrogen content in the first main release material layer 211, the second main release material layer 212, and the third main release material layer 214 decreases sequentially, and the hydrogen content in the corresponding main release section 0021 decreases sequentially, thereby increasing the laser energy required to remove each main release section 0021 accordingly.

[0318] In this embodiment, by making the hydrogen content in the first temporary release layer 214 and the second temporary release layer 216 higher, the laser energy required for the first temporary release layer 214 and the second temporary release layer 216 to be dissociated is smaller, thereby avoiding the dissociation of the first main release material layer 211, the second main release material layer 212 and the third main release material layer 214 when the first temporary release layer 214 and the second temporary release layer 216 are dissociated.

[0319] Meanwhile, compared with Figure 26H, in the embodiment of this application, as shown in Figure 27B, the light-emitting unit 004 and the corresponding release layer can avoid alignment bonding when bonding, thus reducing the difficulty of the fabrication process.

[0320] The transfer substrate assembly provided in this application embodiment can also be used for full-area scanning, improving transfer efficiency and reducing process difficulty.

[0321] In some possible implementations, please refer to Figures 28A, 28B, 28C and 28D, which are schematic flowcharts of another step process for preparing a transfer substrate assembly provided in this application.

[0322] Another method for preparing a transfer substrate assembly provided in this application includes the following steps:

[0323] Step S31: As shown in Figure 28A, a chip substrate is obtained. The chip substrate includes a raw substrate 110 and a plurality of light-emitting units 004 located on one side of the raw substrate 110. A release layer 002 is formed on the side of the plurality of light-emitting units 004 away from the raw substrate 110.

[0324] Optionally, in step S31, a 100 nm thick layer of hydrogen-containing amorphous silicon can be deposited as the release layer 002 using PECVD (laser-enhanced chemical vapor deposition), wherein the hydrogen content is 31%. Refer to Figure 28E, which is a transmittance curve of amorphous silicon with a hydrogen content of 31%. The vertical axis represents transmittance (T%), and the horizontal axis represents the wavelength of light, in nanometers. As shown in Figure 28E, when the hydrogen content is 31%, the release layer 002 has high transmittance for light with wavelengths above 630 nm. Furthermore, the release layer 002 has high transmittance for light with wavelengths around 730 nm, exceeding 90%, for example, 95% or 99%. Moreover, when the hydrogen content is 31%, the transmittance of the release layer 002 for light with wavelengths below 430 nm is very low, far below 10%, for example, reaching 2% or 5%.

[0325] Step S32: Form a sixth temporary substrate, as shown in FIG28B. The sixth temporary substrate includes a substrate 001 and a second connecting material layer 051 located on one side of the substrate 001.

[0326] Step S33, as shown in Figure 28C, the entire substrate from step S31 is fixedly bonded to the sixth temporary substrate from step S32. Optionally, in a vacuum environment, the bonding between the entire substrate from step S31 and the sixth temporary substrate from step S32 is achieved by heating and pressurizing.

[0327] Step S34, as shown in Figure 28D, remove the original substrate 110 of the chip substrate to obtain the transfer substrate assembly. After the second connecting material layer 051 is cured, it becomes the second connecting layer 005.

[0328] Optionally, the original substrate 110 is removed by laser irradiation, acid washing, or other methods. Optionally, after removing the original substrate 110, the light-emitting surface of the light-emitting unit is exposed.

[0329] In the transfer substrate assembly obtained in the embodiments of this application, when the release layer is removed by laser irradiation, the second connection layer 005 is also removed simultaneously. This eliminates the need for subsequent ashing treatment to remove the second connection layer 005 and avoids the risk of damage to the light-emitting surface of the light-emitting unit after the adhesive removal process.

[0330] This disclosure also provides a light-emitting substrate.

[0331] In some possible implementations, please refer to Figure 29, which is a schematic diagram of a light-emitting unit transfer process provided in this application.

[0332] As shown in Figure 29, under laser irradiation, the release layer 200 dissociates, and the first connecting layer 003 and the light-emitting unit 004 fall onto the receiving substrate. In this embodiment, the receiving substrate is used as the driving backplate 100 for illustration.

[0333] The light-emitting substrate provided in this application is the entire substrate after the receiving substrate and the light-emitting units are fixedly connected. As shown in Figure 29, the light-emitting substrate includes: a receiving substrate, a plurality of light-emitting units 004, and a first connecting layer 003. The light-emitting units are located on one side of the receiving substrate, and the first connecting layer 003 is located on the side of the light-emitting units 004 away from the receiving substrate.

[0334] In some possible implementations, please refer to Figures 30 and 31. Figure 30 is a schematic diagram of another light-emitting unit transfer process provided by this application, and Figure 31 is a schematic diagram of another light-emitting unit transfer process provided by this application.

[0335] As shown in Figure 30, after the main release part 0021 is irradiated by the laser and dissociates, the secondary release part 0022 falls off onto the receiving substrate along with the first connecting layer 003. In this case, the light-emitting substrate also includes at least one secondary release part 0022 located on the side of the first connecting layer 003 away from the receiving substrate.

[0336] As shown in Figure 31, after the main release part 0021 is detached by laser irradiation, the second connecting layer 005 remains on the substrate 001 and does not detach along with the light-emitting unit 004. The secondary release part 0022, however, will detach along with the first connecting layer 003 and the light-emitting unit.

[0337] When there are multiple sub-release portions 0022 corresponding to the same light-emitting unit 004, the multiple sub-release portions 0022 are stacked along the thickness direction of the light-emitting substrate, and the hydrogen content of the multiple sub-release portions 0022 corresponding to the same light-emitting unit 004 is different. The hydrogen content of the sub-release portions 0022 that are equidistant from different light-emitting units 004 is the same.

[0338] For example, referring to Figures 30 and 31, after the laser dissociation release layer, the two sub-release sections 0022 closest to different light-emitting units 004 have the same hydrogen content. Multiple sub-release sections 0022 located above the same light-emitting unit 004 have different hydrogen contents.

[0339] In some possible implementations, please refer to Figure 32, which is a schematic diagram of another light-emitting unit transfer process provided in this application.

[0340] As shown in Figure 32, another light-emitting substrate provided in this embodiment includes: a receiving substrate, a plurality of light-emitting units 004, and an attachment layer. The plurality of light-emitting units are located on one side of the receiving substrate. The attachment layer is not shown in Figure 32. The attachment layer is attached to the surface of the light-emitting unit 004 away from the receiving substrate, and the attachment layer includes silicon. It is understood that, referring to Figure 32, before the release layer 002 is detached, since the surface of the light-emitting unit 004 near the substrate 001 is in contact with the release layer 002, some material will remain on the surface of the light-emitting unit near the substrate 001 after the release layer 002 is detached. After the light-emitting unit is transferred, the surface of the light-emitting unit 004 near the substrate 001 is the surface of the light-emitting unit 004 away from the receiving substrate.

[0341] In some possible implementations, the receiving substrate is a color conversion substrate used to convert the light emitted by the light-emitting unit into another color. In this case, the side of the light-emitting unit 004 away from the receiving substrate is the electrode of the light-emitting unit 004. Therefore, an adhesion layer is attached to the electrode surface of the light-emitting unit. Considering that the electrodes of the light-emitting unit 004 need to have good conductivity, but the silicon element in the adhesion layer is not conducive to conductivity, the electrode surface can be treated to make it have good conductivity.

[0342] Optionally, the adhesion layer may further include at least one of metal nanoparticles and doped semiconductors, wherein the doped semiconductors include N-type doped semiconductors and P-type doped semiconductors, thereby improving the conductivity of the adhesion layer.

[0343] In a specific example, the issue of potential a-Si (amorphous silicon) residue after dissociation arises because a-Si is an amorphous semiconductor with long-range atomic disorder, a wide band gap (approximately 1.7 eV), and extremely low carrier concentration at room temperature (electron and hole concentrations approximately 10). 9 cm -3 ), with extremely high resistivity (approximately 10). 10 With a density of Ω·cm, it is close to an insulator and almost non-conductive, therefore, surface modifications to the attached thin film are necessary to make it conductive. For example, the following approaches can be used to improve carrier mobility and reduce defect density:

[0344] 1. Annealing, such as high-temperature annealing (e.g., 300-500℃), can reduce dangling bond defects (e.g., unpaired silicon atoms) in amorphous silicon, reduce carrier scattering centers, and improve carrier mobility.

[0345] 2. Doping N-type and P-type semiconductors can be achieved by gradient doping or multilayer structure design. Specifically, carrier transport channels can be formed and conductivity can be improved by varying the doping concentration (such as gradient layers from p-type to n-type) or stacking amorphous silicon layers with different doping types.

[0346] 3. Doping with metal nanoparticles, for example, doping silver (Ag) or gold (Au) nanoparticles into amorphous silicon thin films to form quantum tunneling conductive channels or metal percolation networks, thereby realizing the conductor-making of amorphous silicon.

[0347] Please refer to Figures 33, 34, 35, 36, and 37. Figure 33 is a cross-sectional view of a chip substrate according to an embodiment of this application. Figures 34 and 35 are schematic diagrams of a transfer substrate assembly fabrication process according to some embodiments. Figures 36 and 37 are schematic diagrams of a light-emitting unit transfer process according to some embodiments.

[0348] As shown in Figure 34, a chip substrate according to this application includes a raw substrate 110 and a plurality of light-emitting units 004 located on one side of the raw substrate 110. Figure 34 shows a cross-sectional structure of one of the light-emitting units 004.

[0349] The light-emitting unit 004 includes a buffer layer 120 in contact with the original substrate 110, a semiconductor layer 130, a multiple quantum well 130, an electrode conductive portion 150, a first electrode 160, and a second electrode 170. The multiple quantum well 130 and the electrode conductive portion 150 are electrically connected to the semiconductor layer 130. The first electrode 160 is electrically connected to the multiple quantum well 130, and the second electrode 170 is electrically connected to the electrode conductive portion 150.

[0350] Optionally, the material of the buffer layer 120 may include gallium nitride. The material of the semiconductor layer 130 may include N-type gallium nitride. The second electrode 170 may be a cathode. The first electrode 160 may be an anode. A first temporary substrate is obtained, as shown in FIG34. The first temporary substrate includes a substrate 001 and a release layer 002 and a first connection layer 003 sequentially stacked on one side of the substrate 001 and in a direction away from the substrate. The chip substrate shown in FIG33 is bonded to the first temporary substrate to obtain the structure shown in FIG34.

[0351] As shown in Figure 35, by removing the original substrate 110, a transfer substrate assembly of this application can be obtained.

[0352] As shown in Figure 36, the transfer substrate assembly shown in Figure 35 is fixedly connected to the color conversion substrate 008, for example, by bonding adhesive 009 using a heating and pressurizing method.

[0353] Optionally, the color conversion substrate 008 includes a substrate 081 and a light-shielding layer 082, a color filter layer 083, a blocking dam 085, a color conversion layer 084, and an encapsulation layer 086 located on one side of the substrate 081. The light-shielding layer 082, the color filter layer 083, the blocking dam 085, and the color conversion layer 084 are encapsulated between the substrate 081 and the encapsulation layer 086.

[0354] Optionally, the light-shielding layer 082 has multiple light-transmitting openings, and the color filter layer 083 is located within the light-transmitting openings. The blocking dam 085 has multiple receiving openings, and the color conversion layer 084 is located within the receiving openings. The color conversion layer 084 can convert the light emitted from the light-emitting unit 004 into light of another color. The blocking dam 0082 is arranged opposite to the light-shielding layer 082, the color conversion layer 084 is arranged opposite to the color filter layer 083, and the light-transmitting openings and receiving openings are arranged opposite to each other.

[0355] As shown in Figure 37, the release layer 002 is irradiated with a laser to dissociate it, thereby removing the release layer 002 and the substrate 001 to obtain the light-emitting substrate. At this time, the first electrode 160 and the second electrode 170 of the light-emitting unit are exposed, and the next process can be carried out to realize the electrical connection with the driving backplane.

[0356] In this embodiment, after the release layer 002 is irradiated with a laser and dissociated, as shown in Figure 37, an adhesive layer remains between the light-emitting units. In other examples, adhesive is also present on the side of the light-emitting unit away from the bonding adhesive 009, and the first connecting layer 003 covers the light-emitting unit. Clearly, the first electrode 160 and the second electrode 170 of the light-emitting unit are covered by the adhesive, affecting their subsequent electrical connection with the driving backplane. Therefore, after removing the release layer 002, the adhesive first connecting layer 003 needs to be ashed and removed. This process may also affect the first electrode 160 and the second electrode 170 of the light-emitting unit.

[0357] In some possible implementations, please refer to Figures 38 and 39, which are schematic diagrams of a light-emitting unit transfer process provided in an embodiment of this application.

[0358] As shown in Figure 38, the release layer 002 is located between the light-emitting unit 004 and the first connecting layer 003. After the release layer 002 is irradiated by laser to cause it to dissociate, as shown in Figure 39, the first connecting layer 003 will detach along with the substrate 001. Therefore, this embodiment can reduce the process of removing the adhesive first connecting layer 003 in the previous embodiment. At the same time, considering that some silicon elements in the release layer 002 will remain on the surface of the first electrode 160 and the second electrode 170 and affect the conductivity of the first electrode 160 and the second electrode 170, the surfaces of the first electrode 160 and the second electrode 170 can be treated with high-temperature annealing to enhance their conductivity and avoid affecting the subsequent electrical connection with the driving backplane.

[0359] It should be noted that the dimensions of layers and regions may be exaggerated in the accompanying drawings for clarity. Furthermore, it is understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element, or there may be intermediate layers. Additionally, it is understood that when an element or layer is referred to as being "below" another element or layer, it can be directly below the other element, or there may be more than one intermediate layer or element. Furthermore, it is also understood that when a layer or element is referred to as being "between" two layers or two elements, it can be the only layer between the two layers or two elements, or there may be more than one intermediate layer or element. Similar reference numerals throughout indicate similar elements.

[0360] In this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. The term "multiple" refers to two or more unless otherwise expressly defined.

[0361] The above description is merely an optional embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A transfer substrate for transferring multiple light-emitting units, characterized in that, include: Substrate and release layer; The release layer is located on one side of the substrate; The release layer is an inorganic layer containing silicon. The transfer substrate further includes: A first connecting layer, located on the side of the release layer away from the substrate, is used to connect the plurality of light-emitting units; And / or, A second connecting layer is located between the release layer and the substrate; the second connecting layer is used to connect the release layer and the substrate.

2. The transfer substrate according to claim 1, characterized in that, The release layer comprises: an amorphous silicon substrate and hydrogen elements doped in the amorphous silicon substrate.

3. The transfer substrate according to claim 2, characterized in that, The hydrogen content is in the range of 1%-35%.

4. The transfer substrate according to claim 1, characterized in that, The substrate has a transmittance of 50% or more to the preset light, and / or the release layer has a transmittance of 10% or less to the preset light; The wavelength of the preset light is in the range of 300nm to 400nm.

5. The transfer substrate according to any one of claims 1 to 4, characterized in that, The release layer includes: a plurality of main release portions, each of the main release portions corresponding to at least one of the light-emitting units; The orthographic projection of the light-emitting unit on the substrate overlaps with the orthographic projection of the corresponding main release part on the substrate.

6. The transfer substrate according to claim 5, characterized in that, The plurality of main release sections are divided into at least two groups of main release sections, and the plurality of light-emitting units are divided into at least two groups of light-emitting units, with the at least two groups of main release sections corresponding to the at least two groups of light-emitting units; The release layer contains hydrogen, and for the two different main release sections, the hydrogen content in one main release section is different from that in the other main release section.

7. The transfer substrate according to claim 6, characterized in that, The at least two sets of main release sections include a first set of main release sections and a second set of main release sections, wherein the hydrogen content in the first set of main release sections is different from the hydrogen content in the second set of main release sections. The release layer further includes a plurality of sub-release portions, each sub-release portion corresponding to at least one of the light-emitting units. The sub-release portion is located on the side of the main release portion in the first group of main release portions that is away from the substrate, and the hydrogen content in the sub-release portion is the same as that in the main release portion in the second group of main release portions. The thickness of the sub-release portion is the same as that in the main release portion in the second group of main release portions.

8. The transfer substrate according to claim 7, characterized in that, The transfer substrate includes a first interconnect layer; Wherein, the thickness of the first connecting layer between the release layer corresponding to the first group of main release parts and the light-emitting unit is less than the thickness of the first connecting layer between the release layer corresponding to the second group of main release parts and the light-emitting unit.

9. The transfer substrate according to claim 7, characterized in that, The transfer substrate includes a second interconnect layer and a first interconnect layer; Wherein, the thickness of the second connecting layer between the release layer corresponding to the first group of main release parts and the substrate is less than the thickness of the second connecting layer between the release layer corresponding to the second group of main release parts and the substrate; The thickness of the first connecting layer between the release layer corresponding to the first group of main release parts and the substrate is equal to the thickness of the first connecting layer between the release layer corresponding to the second group of main release parts and the substrate.

10. The transfer substrate according to claim 7, characterized in that, The thickness ratio of the secondary release portion to the main release portion corresponding to the same light-emitting unit is 0.8–1.

2.

11. The transfer substrate according to any one of claims 5 to 10, characterized in that, For two different main release sections, the difference between the hydrogen content in one main release section and the hydrogen content in the other main release section is greater than or equal to 3%.

12. The transfer substrate according to any one of claims 5 to 10, characterized in that, The main release section is strip-shaped, and one main release section corresponds to at least two light-emitting units, and the extension direction of the main release section is parallel to the arrangement direction of the corresponding at least two light-emitting units; Alternatively, the main release portion is block-shaped, and the orthographic projection of the main release portion onto the substrate covers the orthographic projection of at least one corresponding light-emitting unit onto the substrate.

13. The transfer substrate according to any one of claims 5 to 10, characterized in that, When one of the main release portions corresponds to at least two of the light-emitting units, the main release portion includes: at least two release blocks, and an auxiliary connection portion for connecting the at least two release blocks; The at least two release blocks correspond one-to-one with the at least two light-emitting units, and the orthographic projection of the light-emitting unit on the substrate is located within the orthographic projection of the corresponding release block on the substrate; The release layer contains hydrogen, and in the same main release section, the hydrogen content of each release block is the same as the hydrogen content of the auxiliary connection section.

14. The transfer substrate according to claim 13, characterized in that, The thickness of the auxiliary connection is not greater than the thickness of the release block.

15. The transfer substrate according to any one of claims 5 to 10, characterized in that, The first connection layer includes a plurality of first connection blocks, which are used to connect one-to-one with the plurality of light-emitting units.

16. The transfer substrate according to claim 15, characterized in that, The second connection layer includes a plurality of second connection blocks, which are used to connect one-to-one with the plurality of main release parts.

17. The transfer substrate according to any one of claims 5 to 10, characterized in that, The thickness of the main release portion is in the range of 100 nanometers to 150 nanometers in the direction perpendicular to the substrate.

18. The transfer substrate according to any one of claims 1 to 4, characterized in that, The transfer substrate includes a second interconnect layer, the second interconnect layer comprising: The first part, wherein the orthographic projection of the first part on the substrate is located outside the orthographic projection of the light-emitting unit on the substrate; The second part is located between the surface of the light-emitting unit near the substrate and the substrate; The thickness of the first part is greater than the thickness of the second part.

19. The transfer substrate according to claim 18, characterized in that, The surface of the release layer away from the substrate is configured to be flush with the surface of the light-emitting unit away from the substrate.

20. A method for transferring light-emitting units, characterized in that, include: Provide a transfer substrate and a receiving substrate; The transfer substrate is the transfer substrate according to any one of claims 1-19, and the transfer substrate is connected to a plurality of light-emitting units; The transfer substrate is placed on one side of the receiving substrate, so that the target light-emitting unit connected to the transfer substrate is aligned with the target position of the receiving substrate, and the target light-emitting unit is the light-emitting unit to be transferred; Laser dissociation is performed on the portion of the release layer corresponding to the target light-emitting unit, so that the target light-emitting unit is separated from the transfer substrate and transferred to the receiving substrate.

21. The transfer method according to claim 20, characterized in that, Laser dissociation is performed on the portion of the release layer corresponding to the target light-emitting unit, including: A mask structure is disposed on the side of the transfer substrate opposite to the receiving substrate, and the mask structure has a light-transmitting area; Under the cover of the mask structure, the entire surface of the transfer substrate is irradiated with laser to dissociate the portion of the release layer corresponding to the target light-emitting unit; In this embodiment, the orthographic projection of the portion of the release layer corresponding to the target light-emitting unit onto the substrate overlaps with the orthographic projection of the light-transmitting area onto the substrate.

22. The transfer method according to claim 20, characterized in that, The multiple main release portions of the release layer include at least two sets of main release portions, and the multiple light-emitting units include at least two sets of light-emitting units. The at least two sets of main release portions correspond one-to-one with the at least two sets of light-emitting units. Among them, the energy density threshold of the laser when the main release part of different groups is dissociated is different. The energy density threshold of the laser when dissociated is the minimum energy density of the laser required for the main release part to be dissociated.

23. The transfer method according to claim 22, characterized in that, The main release section contains hydrogen, and the hydrogen content of different groups of main release sections is different; the at least two groups of main release sections include a first group of main release sections and a second group of main release sections, and the hydrogen content of the first group of main release sections is greater than the hydrogen content of the second group of main release sections. Laser dissociation is performed on the portion of the release layer corresponding to the target light-emitting unit, including: First, the transfer substrate is irradiated with a laser of the first energy density to dissociate the first group of main release parts and transfer the target light-emitting unit corresponding to the first group of main release parts; The transfer substrate is then irradiated with a laser of the second energy density to dissociate the second set of main release parts and transfer the target light-emitting unit corresponding to the second set of main release parts. Wherein, the first energy density is not less than the energy density threshold of the laser when the first group of main release parts is dissociated, and the first energy density is less than the energy density threshold of the laser when the second group of main release parts is dissociated, and the second energy density is not less than the energy density threshold of the laser when the second group of main release parts is dissociated.

24. The transfer method according to claim 22 or 23, characterized in that, Each light-emitting unit in the same group of light-emitting units is used to emit light of the same color; for two different groups of light-emitting units, the color of the light emitted by one group of light-emitting units is different from the color of the light emitted by the other group of light-emitting units; or, The transfer substrate has at least two partitions, and each main release part in the same group of main release parts is located in the same partition. Each main release part in the same group of main release parts is disposed in the same layer and has the same material and the same hydrogen content. or, Each light-emitting unit in the same group has the same size. For two different groups of light-emitting units, the size of one group of light-emitting units is different from that of the other group of light-emitting units.

25. The transfer method according to claim 22 or 23, characterized in that, The transfer substrate includes: a first transfer substrate, a second transfer substrate, and a third transfer substrate; for each of the transfer substrates, the light-emitting units on the transfer substrate are used to emit light of the same color, and the light emitted by the light-emitting units on the first transfer substrate, the second transfer substrate, and the third transfer substrate are different colors; The first transfer substrate, the second transfer substrate, and the third transfer substrate all include the at least two sets of main release portions; The process includes placing the transfer substrate on one side of the receiving substrate, aligning the target light-emitting unit in the transfer substrate with the target position on the receiving substrate, and performing laser dissociation on the portion of the release layer corresponding to the target light-emitting unit to separate the target light-emitting unit from the transfer substrate and transfer it to the receiving substrate. This includes a first transfer process, which comprises: The target light-emitting units corresponding to a group of main release parts on the first transfer substrate, the target light-emitting units corresponding to a group of main release parts on the second transfer substrate, and the target light-emitting units corresponding to a group of main release parts on the third transfer substrate are respectively transferred to the receiving substrate. After the first group transfer process, the light-emitting units corresponding to other groups of main release parts on the first transfer substrate are still retained on the first transfer substrate, the light-emitting units corresponding to other groups of main release parts on the second transfer substrate are still retained on the second transfer substrate, and the light-emitting units corresponding to other groups of main release parts on the third transfer substrate are still retained on the third transfer substrate.

26. The transfer method according to claim 25, characterized in that, The transfer substrate is placed on one side of the receiving substrate, and the target light-emitting unit in the transfer substrate is aligned with the target position of the receiving substrate. The portion of the release layer corresponding to the target light-emitting unit is laser-dissociated so that the target light-emitting unit is separated from the transfer substrate and transferred to the receiving substrate. This includes a second transfer process, which is after the first transfer process. The second transfer process includes: The target light-emitting unit corresponding to another set of main release parts on the first transfer substrate is transferred to another receiving substrate; The target light-emitting unit corresponding to another set of main release sections on the second transfer substrate is transferred to another receiving substrate; The target light-emitting unit corresponding to another set of main release sections on the third transfer substrate is transferred to another receiving substrate.

27. A light-emitting substrate, characterized in that, include: Receiving substrate; Multiple light-emitting units located on one side of the receiving substrate; The first connecting layer is located on the side of the light-emitting unit away from the receiving substrate.

28. The light-emitting substrate according to claim 27, characterized in that, The light-emitting substrate further includes at least one secondary release portion located on the side of the first connecting layer away from the receiving substrate, the secondary release portion including hydrogen element; When there are multiple secondary release parts corresponding to the same light-emitting unit, the multiple secondary release parts are stacked along the thickness direction of the light-emitting substrate, and the hydrogen content of the multiple secondary release parts corresponding to the same light-emitting unit is different, while the hydrogen content of the secondary release parts that are at the same distance from different light-emitting units is the same.

29. A light-emitting substrate, characterized in that, include: Receiving substrate; Multiple light-emitting units located on one side of the receiving substrate; An adhesion layer is attached to the surface of the light-emitting unit away from the receiving substrate, and the adhesion layer comprises silicon.

30. The light-emitting substrate according to claim 29, characterized in that, The receiving substrate is a color conversion substrate, used to convert the light emitted by the light-emitting unit into light of another color; The adhesion layer is attached to the electrode surface of the light-emitting unit, and the adhesion layer also includes at least one of metal nanoparticles and doped semiconductors, wherein the doped semiconductors include N-type doped semiconductors and P-type doped semiconductors.

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