Display panel and manufacturing method therefor, and display device

Abstract

Provided are a display panel, a manufacturing method therefor, and a display device. The display panel comprises: a base substrate, and an auxiliary electrode layer (10), a cathode layer (13), and a separation structure (14) disposed on the base substrate; the separation structure (14) is located on the side of the auxiliary electrode layer (10) facing away from the base substrate, the separation structure (14) comprises a first separation portion and a second separation portion (142) that are stacked, the first separation portion is located between the second separation portion (142) and the base substrate, the first separation portion comprises a single-layer first separation layer (141), and the separation structure (14) forms a notch on a side surface of the first separation layer (141); the cathode layer (13) is disconnected at the notch to form a first cathode portion (131) and a second cathode portion (132) that are independent of each other, the first cathode portion (131) is located on the side of the second separation portion (142) facing away from the base substrate, and the second cathode portion (132) is electrically connected to the auxiliary electrode layer (10) at the notch.

Description

Display panel and its manufacturing method, display device

[0001] Cross-references to related applications

[0002] This application claims priority to Chinese Patent Application No. 202510404053.8, filed in China on March 28, 2025, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This disclosure relates to the field of display technology, and in particular to a display panel, a method for manufacturing the same, and a display device. Background Technology

[0004] Top-emitting WOLED (White Organic Light-Emitting Diode) display panels have a structure where light is emitted above the EL layer (light-emitting layer). It generates white OLED backlight by combining light emitted from the blue OLED emitter with yellow phosphor, and then uses an RGB color filter array to form individual red, green, and blue sub-pixels. In this structure, the cathode layer above the EL layer must be a transparent cathode. However, the high resistance of a transparent cathode results in a large voltage drop (Vss IR Drop) on the voltage signal transmitted through the cathode layer. This leads to differences in brightness across different display areas of the panel, causing display defects. Summary of the Invention

[0005] The purpose of this disclosure is to provide a display panel, a method for manufacturing the same, and a display device.

[0006] To achieve the above objectives, this disclosure provides the following technical solution:

[0007] A first aspect of this disclosure provides a display panel, comprising: a substrate and an auxiliary electrode layer, a cathode layer and a partition structure disposed on the substrate;

[0008] The partition structure is located on the side of the auxiliary electrode layer facing away from the substrate. The partition structure includes a first partition portion and a second partition portion stacked together. The first partition portion is located between the second partition portion and the substrate. The first partition portion includes a single-layer first partition layer. The partition structure forms a notch on the side of the first partition layer.

[0009] The cathode layer is broken at the notch to form a first cathode portion and a second cathode portion that are independent of each other. The first cathode portion is located on the side of the second partition portion facing away from the substrate, and the second cathode portion is electrically connected to the auxiliary electrode layer at the notch.

[0010] Optionally, the display panel further includes a connecting electrode layer located between the first partition layer and the auxiliary electrode layer, wherein the second cathode portion is electrically connected to the auxiliary electrode layer at the notch via the connecting electrode layer.

[0011] Optionally, the connecting electrode layer comprises a single-layer film.

[0012] Optionally, the orthographic projection of the first partition layer on the substrate is located inside the orthographic projection of the second partition portion on the substrate, and the orthographic projection of the edge portion of the second partition portion on the substrate surrounds the orthographic projection of the first partition layer on the substrate.

[0013] The orthographic projection of the second partition portion on the substrate is located inside the orthographic projection of the connecting electrode layer on the substrate, and the orthographic projection of the edge portion of the connecting electrode layer on the substrate surrounds the orthographic projection of the second partition portion on the substrate.

[0014] Optionally, the first partition layer includes a columnar polycrystalline silicon nitride film.

[0015] Optionally, the second partition portion includes a single-layer second partition layer.

[0016] Optionally, the first partition layer includes a single layer of conductive metal.

[0017] Optionally, the second partition portion includes a columnar polycrystalline silicon nitride film and an indium tin oxide layer stacked together, wherein the columnar polycrystalline silicon nitride film is located between the indium tin oxide layer and the substrate; the orthographic projection of the columnar polycrystalline silicon nitride film on the substrate coincides with the orthographic projection of the indium tin oxide layer on the substrate.

[0018] Optionally, the display panel further includes a light-emitting functional layer, which is disconnected at the notch to form a first light-emitting functional portion and a second light-emitting functional portion that are independent of each other. The first light-emitting functional portion is located between the first cathode portion and the second partition portion, and at least a portion of the second light-emitting functional portion is located between the second cathode portion and the connecting electrode layer.

[0019] Optionally, the auxiliary electrode layer includes auxiliary electrode lines and a plurality of auxiliary electrode patterns respectively coupled to the auxiliary electrode lines, the plurality of auxiliary electrode patterns being arranged sequentially along the extension direction of the auxiliary electrode lines;

[0020] The partition structure is located on the side of the auxiliary electrode pattern facing away from the substrate, and the second cathode portion is electrically connected to the auxiliary electrode pattern at the notch.

[0021] Based on the above-described display panel technical solution, a second aspect of this disclosure provides a display device including the above-described display panel.

[0022] Based on the above-described technical solution for the display panel, a third aspect of this disclosure provides a method for manufacturing a display panel, used to manufacture the aforementioned display panel; the manufacturing method includes:

[0023] An auxiliary electrode layer is fabricated on a substrate.

[0024] A partition structure is formed on the side of the auxiliary electrode layer facing away from the substrate. The partition structure includes a first partition portion and a second partition portion stacked together. The first partition portion is located between the second partition portion and the substrate. The first partition portion includes a single layer of first partition layer. The partition structure forms a notch on the side of the first partition layer.

[0025] A cathode layer is fabricated, which is broken at the notch to form a first cathode portion and a second cathode portion that are independent of each other. The first cathode portion is located on the side of the second partition portion facing away from the substrate, and the second cathode portion is electrically connected to the auxiliary electrode layer at the notch.

[0026] Optionally, the steps for constructing the partition structure specifically include:

[0027] The first barrier material layer is formed by deposition;

[0028] A second partition material layer is deposited on the side of the first partition material layer facing away from the substrate.

[0029] An etching process is used to simultaneously pattern the material layer of the second partition portion and the material layer of the first partition portion to form the first partition layer and the second partition portion.

[0030] Optionally, the first partition layer includes a columnar polycrystalline silicon nitride film layer, and the second partition portion includes a single-layer second partition layer; the steps for fabricating the partition structure specifically include:

[0031] Columnar polycrystalline silicon nitride thin films are deposited to form them.

[0032] A second barrier material layer is deposited on the side of the columnar polycrystalline silicon nitride thin film facing away from the substrate.

[0033] An etching process is used to simultaneously pattern the second barrier material layer and the columnar polycrystalline silicon nitride thin film to form the columnar polycrystalline silicon nitride film layer and the second barrier layer.

[0034] Optionally, the first partition layer includes a single conductive metal layer, and the second partition portion includes a stacked columnar polycrystalline silicon nitride film layer and an indium tin oxide layer; the steps for fabricating the partition structure specifically include:

[0035] A conductive metallic material layer is deposited to form the layer.

[0036] A columnar polycrystalline silicon nitride thin film is deposited on the side of the conductive metal material layer facing away from the substrate.

[0037] An indium tin oxide layer is deposited on the side of the columnar polycrystalline silicon nitride thin film facing away from the substrate.

[0038] An etching process is used to simultaneously pattern the indium tin oxide material layer, the columnar polycrystalline silicon nitride thin film, and the conductive metal material layer to form the single-layer conductive metal layer, the columnar polycrystalline silicon nitride film layer, and the indium tin oxide layer; the orthographic projection of the columnar polycrystalline silicon nitride film layer on the substrate coincides with the orthographic projection of the indium tin oxide layer on the substrate.

[0039] Optionally, the step of depositing to form a columnar polycrystalline silicon nitride thin film specifically includes:

[0040] Using silane and nitrogen in a ratio of 1:30 to 1:100, columnar polycrystalline silicon nitride thin films are deposited at process temperatures below 230°C via plasma vapor deposition. Attached Figure Description

[0041] The accompanying drawings, which are included to provide a further understanding of this disclosure and form part of this disclosure, illustrate exemplary embodiments of the present disclosure and are used to explain the disclosure, but do not constitute an undue limitation of the disclosure. In the drawings:

[0042] Figure 1 is a cross-sectional schematic diagram of the display panel provided in an embodiment of this disclosure;

[0043] Figure 2 is a top view of the display panel provided in an embodiment of this disclosure;

[0044] Figure 3 is a schematic diagram of short circuits between adjacent sub-pixels in a display panel provided in an embodiment of this disclosure;

[0045] Figure 4 is a cross-sectional schematic diagram of the partition structure in the related technology;

[0046] Figure 5 is a schematic diagram of the first cross section of the partition structure provided in the embodiment of this disclosure;

[0047] Figure 6 is a schematic diagram of the second cross section of the partition structure provided in the embodiment of this disclosure. Detailed Implementation

[0048] To further illustrate the display panel, its manufacturing method, and the display device provided in the embodiments of this disclosure, a detailed description is provided below with reference to the accompanying drawings.

[0049] Please refer to Figures 5 and 6. This disclosure provides a display panel, including: a substrate and an auxiliary electrode layer 10, a cathode layer 13 and a partition structure 14 disposed on the substrate.

[0050] The partition structure 14 is located on the side of the auxiliary electrode layer 10 facing away from the substrate. The partition structure 14 includes a first partition portion and a second partition portion 142 stacked together. The first partition portion is located between the second partition portion 142 and the substrate. The first partition portion includes a single-layer first partition layer 141. The partition structure 14 forms a notch on the side of the first partition layer 141.

[0051] The cathode layer 13 is broken at the notch to form a first cathode portion 131 and a second cathode portion 132 that are independent of each other. The first cathode portion 131 is located on the side of the second partition portion 142 facing away from the substrate, and the second cathode portion 132 is electrically connected to the auxiliary electrode layer 10 at the notch.

[0052] As shown in Figure 1, the display panel further includes a substrate 30, a driving circuit layer 31, a pixel electrode layer 32, a light-emitting functional layer 12, a white color filter layer (CFW), a red color filter layer (CFR), a green color filter layer (CFG), and a blue color filter layer (CFB). The dashed arrows in Figure 1 represent the light emission direction of the display panel.

[0053] As shown in Figure 2, for example, the display panel includes an auxiliary electrode layer 10, a data signal transmission layer DA, a reference signal transmission layer Vref, and a power signal transmission layer Vdd; for example, the orthographic projection of the auxiliary electrode layer 10 on the substrate, the orthographic projection of the reference signal transmission layer Vref on the substrate, and the orthographic projection of the power signal transmission layer Vdd on the substrate are arranged sequentially and cyclically along a first direction.

[0054] For example, the display panel includes an array of sub-pixels (e.g., red sub-pixel R, green sub-pixel G, blue sub-pixel B, and white sub-pixel W). These sub-pixels are divided into multiple columns arranged along a first direction. Each column includes multiple sub-pixels arranged along a second direction, which intersects the first direction. For instance, each column has a data signal transmission layer DA on each side. The odd-numbered sub-pixel in the column is coupled to the data signal transmission layer DA on the first side, and the even-numbered sub-pixel in the column is coupled to the data signal transmission layer DA on the second side.

[0055] For example, the orthographic projection of the data signal transmission layer DA on the substrate is located between the orthographic projection of a column of sub-pixels coupled to it on the substrate and the orthographic projection of the adjacent power signal transmission layer Vdd on the substrate; or, it is located between the orthographic projection of a column of sub-pixels coupled to it on the substrate and the orthographic projection of the adjacent reference signal transmission layer Vref on the substrate; or, it is located between the orthographic projection of a column of sub-pixels coupled to it on the substrate and the orthographic projection of the adjacent auxiliary electrode layer 10 on the substrate.

[0056] For example, the display panel includes a plurality of partition structures 14. The auxiliary electrode layer 10 is formed first in the display panel, then the partition structures 14 are formed, and then the cathode layer 13 is formed. The partition structure 14 includes a first partition portion and a second partition portion 142 stacked together. Along a direction parallel to the substrate, the second partition portion 142 protrudes from the first partition portion, i.e., it has a tip structure protruding from the first partition portion, thereby forming a notch on the side of the first partition layer 141.

[0057] For example, the first partition portion includes a single-layer first partition layer 141, and the second partition portion 142 may include a single-layer structure or a double-layer structure, but is not limited thereto.

[0058] For example, due to the function of the above-mentioned Tip structure, the cathode layer 13 can be broken at the notch to form an independent first cathode portion 131 and a second cathode portion 132, and the second cathode portion 132 can be electrically connected to the auxiliary electrode layer 10 at the notch.

[0059] As can be seen from the structure of the display panel described above, the display panel provided in this embodiment includes the auxiliary electrode layer 10, the cathode layer 13, and the partition structure 14. The partition structure 14 is located on the side of the auxiliary electrode layer 10 facing away from the substrate, and the side of the partition structure 14 has a notch, so that the cathode layer 13 can be electrically connected to the auxiliary electrode layer 10 at the notch, thereby effectively reducing the resistance of the cathode layer 13, improving the problem of different display brightness differences in different display areas of the display panel caused by the large Vss IR Drop, and improving the brightness uniformity of the display panel.

[0060] Furthermore, as shown in Figure 4, if the partition structure 14 is configured as shown in Figure 3, including a second conductive layer 22, a third conductive layer 23, a fourth conductive layer 24, and a fifth conductive layer 25, then the fabrication of this partition structure 14 requires a process of depositing and etching four conductive layers. When performing so many processes, particle generation and process defects in the equipment reduce yield and increase process time. It should be noted that Figure 3 also illustrates the first conductive layer 21 and the tip structure 251 included in the fifth conductive connection portion 25.

[0061] In the display panel provided in this embodiment, the partition structure 14 includes a first partition portion and a second partition portion 142 stacked together. The first partition portion is located between the second partition portion 142 and the substrate. The first partition portion includes a single-layer first partition layer 141, and the partition structure 14 forms a notch on the side of the first partition layer 141. This arrangement helps to reduce the number of film layers included in the partition structure 14 as a whole. When the second partition portion 142 includes only one film layer, only a process of depositing and etching two film layers is required; when the second partition portion 142 includes two film layers, only a process of depositing and etching three film layers is required. Therefore, in the display panel provided in this embodiment, the manufacturing process of the partition structure 14 can be effectively simplified, the manufacturing process time can be shortened, and defects generated during deposition and etching can be reduced, thereby effectively improving the manufacturing yield and increasing production volume.

[0062] As shown in Figures 5 and 6, in some embodiments, the display panel further includes a connecting electrode layer 11 located between the first partition layer 141 and the auxiliary electrode layer 10, and the second cathode portion 132 is electrically connected to the auxiliary electrode layer 10 at the notch via the connecting electrode layer 11.

[0063] It should be noted that the passivation layer PVX is also shown in Figures 5 and 6.

[0064] For example, the connecting electrode layer 11 comprises a single-layer film. The connecting electrode layer 11 is made of a single material and formed through a single patterning process.

[0065] For example, the display panel further includes a pixel electrode layer, and the connecting electrode layer 11 is disposed in the same layer and made of the same material as the pixel electrode layer, but is not limited thereto. For example, the pixel electrode layer is made of indium tin oxide (ITO).

[0066] For example, at least a portion of the connecting electrode layer 11 is located on the surface of the auxiliary electrode layer 10 facing away from the substrate.

[0067] For example, the cross-section of the partition structure 14 and the connecting electrode layer 11 as a whole is formed in the shape of an I.

[0068] The above-mentioned arrangement of the second cathode portion 132 electrically connecting the auxiliary electrode layer 10 at the notch via the connecting electrode layer 11 not only ensures the connection performance but also reduces the connection difficulty between the second cathode portion 132 and the auxiliary electrode layer 10.

[0069] As shown in Figures 5 and 6, in some embodiments, the orthographic projection of the first partition layer 141 on the substrate is located inside the orthographic projection of the second partition portion 142 on the substrate, and the orthographic projection of the edge portion of the second partition portion 142 on the substrate surrounds the orthographic projection of the first partition layer 141 on the substrate.

[0070] The orthographic projection of the second partition portion 142 on the substrate is located inside the orthographic projection of the connecting electrode layer 11 on the substrate, and the orthographic projection of the edge portion of the connecting electrode layer 11 on the substrate surrounds the orthographic projection of the second partition portion 142 on the substrate.

[0071] For example, as shown in FIG2, the auxiliary electrode layer 10 includes an auxiliary electrode line 101 and a plurality of auxiliary electrode patterns 102 respectively coupled to the auxiliary electrode line 101, the plurality of auxiliary electrode patterns 102 being arranged sequentially along the extension direction of the auxiliary electrode line 101; the partition structure 14 is located on the side of the auxiliary electrode pattern 102 facing away from the substrate, and the second cathode portion 132 is electrically connected to the auxiliary electrode pattern 102 at the notch.

[0072] For example, the orthographic projection of the auxiliary electrode pattern 102 on the substrate is located inside the orthographic projection of the connecting electrode layer 11 on the substrate. Further, the orthographic projection of the boundary of the connecting electrode layer 11 on the substrate may be configured to surround the orthographic projection of the auxiliary electrode pattern 102 on the substrate.

[0073] The above-described configuration allows recesses to be formed around the partition portion, thereby enabling the second cathode portion 132 to achieve electrical connection with the connecting electrode layer 11 around the partition portion, further improving the connection performance.

[0074] As shown in Figure 5, in some embodiments, the first partition layer 141 includes a columnar polycrystalline silicon nitride film.

[0075] For example, the second partition portion 142 includes a single-layer second partition layer. For instance, the second partition layer is made of indium tin oxide.

[0076] It is worth noting that typical silicon nitride films are amorphous. If a large amount of ammonia and silane gas are directly deposited onto the ITO film during fabrication, it will lead to defects such as decreased transparency of the ITO film and ITO opening.

[0077] Fabrication of columnar polycrystalline SiN x In thin film engineering, NH3 is not used; instead, a small amount of SiH4 gas and a large amount of nitrogen are used to avoid undesirable phenomena such as ITO haze and ITO open. Meanwhile, due to the columnar polycrystalline SiN... x The thin film exhibits etching properties as the wet etching solution penetrates between the film layers, allowing for the etching of columnar polycrystalline SiN through wet etching. x Thin film patterning is used to form columnar polycrystalline silicon nitride film.

[0078] More specifically, the process for fabricating the partition structure 14 in the above embodiments includes: depositing a columnar polycrystalline silicon nitride thin film; depositing a second partition material layer on the side of the columnar polycrystalline silicon nitride thin film facing away from the substrate; and simultaneously patterning the second partition material layer and the columnar polycrystalline silicon nitride thin film using a wet etching process to form the columnar polycrystalline silicon nitride film layer and the second partition layer. The step of depositing the columnar polycrystalline silicon nitride thin film specifically includes: using a ratio of silane to nitrogen gas of 1:30 to 1:100, and employing plasma vapor deposition at a process temperature below 230°C to deposit the columnar polycrystalline silicon nitride thin film.

[0079] For example, when using a wet etching process, a metal etching solution can be used for etching, but it is not limited to this.

[0080] The above configuration only requires the deposition and etching of two film layers, which can effectively simplify the manufacturing process of the partition structure 14, shorten the manufacturing process time, and reduce the defects generated during deposition and etching, thereby effectively improving the manufacturing yield and increasing the output.

[0081] As shown in Figure 6, in some embodiments, the first partition layer 141 includes a single layer of conductive metal.

[0082] For example, the single-layer conductive metal layer is made of a metallic material, such as, but not limited to, the metal Mo.

[0083] For example, the second partition portion 142 includes a columnar polycrystalline silicon nitride film layer 1422 and an indium tin oxide layer 1421 stacked together, wherein the columnar polycrystalline silicon nitride film layer 1422 is located between the indium tin oxide layer 1421 and the substrate; the orthographic projection of the columnar polycrystalline silicon nitride film layer 1422 on the substrate coincides with the orthographic projection of the indium tin oxide layer 1421 on the substrate.

[0084] More specifically, the process for fabricating the partition structure 14 in the above embodiments includes: depositing a conductive metal material layer; depositing a columnar polycrystalline silicon nitride thin film on the side of the conductive metal material layer facing away from the substrate; depositing an indium tin oxide material layer on the side of the columnar polycrystalline silicon nitride thin film facing away from the substrate; and simultaneously patterning the indium tin oxide material layer, the columnar polycrystalline silicon nitride thin film, and the conductive metal material layer using an etching process to form the single-layer conductive metal layer, the columnar polycrystalline silicon nitride film layer, and the indium tin oxide layer; the orthographic projection of the columnar polycrystalline silicon nitride film layer on the substrate coincides with the orthographic projection of the indium tin oxide layer on the substrate. The step of depositing the columnar polycrystalline silicon nitride thin film specifically includes: using a ratio of silane and nitrogen of 1:30 to 1:100, and employing plasma vapor deposition, depositing the columnar polycrystalline silicon nitride thin film at a process temperature below 230°C.

[0085] For example, when using a wet etching process, a metal etching solution can be used for etching, but it is not limited to this.

[0086] The above configuration only requires the deposition and etching of three film layers, which can effectively simplify the manufacturing process of the partition structure 14, shorten the manufacturing process time, and reduce defects generated during deposition and etching, thereby effectively improving the manufacturing yield and increasing production.

[0087] It should be noted that, as shown in Figure 4, in the related technology, the partition structure 14 includes a second conductive layer 22, a third conductive layer 23, a fourth conductive layer 24, and a fifth conductive layer 25 stacked sequentially. The fifth conductive layer 25 includes a tip structure 251. When fabricating this structure, the four film layers are deposited sequentially, and then wet etching is performed sequentially starting from the top film layer to form the structure. This structure requires a complex process. During the O2 Plasma and cleaning process before the organic light-emitting layer is deposited, the tip structure 251 breaks, which can cause short circuits between adjacent sub-pixels. As shown in Figure 3, the black bars indicate short circuits between adjacent sub-pixels.

[0088] The second partition portion 142 is configured as described above, which includes a stacked columnar polycrystalline silicon nitride film layer and an indium tin oxide layer. This improves the problem that the tip structure is prone to breakage when the second partition portion 142 only includes an indium tin oxide layer. This avoids the problem of short circuit between adjacent sub-pixels caused by the breakage of the tip structure, improves the defect of simultaneous light emission of adjacent sub-pixels, and effectively improves the picture quality of the display panel.

[0089] As shown in Figures 5 and 6, in some embodiments, the display panel further includes a light-emitting functional layer 12, which is broken at the notch to form a first light-emitting functional portion 121 and a second light-emitting functional portion 122 that are independent of each other. The first light-emitting functional portion 121 is located between the first cathode portion 131 and the second partition portion 142, and at least a portion of the second light-emitting functional portion 122 is located between the second cathode portion 132 and the connecting electrode layer 11.

[0090] For example, the light-emitting functional layer 12 includes a white light-emitting functional layer 12, but is not limited to this.

[0091] The above configuration allows the second cathode portion 132 to be electrically connected to the connecting electrode layer 11 simultaneously through the second light-emitting functional portion 122, and then electrically connected to the auxiliary electrode through the connecting electrode layer 11. This method further enhances the reliability of the connection between the second cathode portion 132 and the auxiliary electrode.

[0092] As shown in FIG2, in some embodiments, the auxiliary electrode layer 10 includes an auxiliary electrode line 101 and a plurality of auxiliary electrode patterns 102 respectively coupled to the auxiliary electrode line 101, the plurality of auxiliary electrode patterns 102 being arranged sequentially along the extension direction of the auxiliary electrode line 101; the partition structure 14 is located on the side of the auxiliary electrode pattern 102 facing away from the substrate, and the second cathode portion 132 is electrically connected to the auxiliary electrode pattern 102 at the notch.

[0093] For example, the auxiliary electrode layer 10 includes an auxiliary electrode line 101 and a plurality of auxiliary electrode patterns 102 respectively coupled to the auxiliary electrode line 101; for example, the auxiliary electrode pattern 102 and the auxiliary electrode line 101 coupled thereto are formed as an integral structure.

[0094] For example, the extension direction of the auxiliary electrode line 101 is the same as the arrangement direction of the plurality of sub-pixels included in the sub-pixel column.

[0095] For example, the partition structure 14 corresponds one-to-one with the auxiliary electrode pattern 102, and the partition structure 14 is located on the side of the corresponding auxiliary electrode pattern 102 facing away from the substrate.

[0096] The above configuration ensures a full connection between the cathode layer 13 and the auxiliary electrode layer 10, thus better guaranteeing the reliability of the connection.

[0097] This disclosure also provides a display device, including the display panel provided in the above embodiments.

[0098] It should be noted that the display device can be any product or component with display function, such as a television, monitor, digital photo frame, mobile phone, or tablet computer. The display device also includes flexible circuit boards, printed circuit boards, and backplanes.

[0099] The display panel provided in the above embodiments includes the auxiliary electrode layer 10, the cathode layer 13, and the partition structure 14. The partition structure 14 is located on the side of the auxiliary electrode layer 10 facing away from the substrate, and the side of the partition structure 14 has a notch, so that the cathode layer 13 can be electrically connected to the auxiliary electrode layer 10 at the notch, thereby effectively reducing the resistance of the cathode layer 13, improving the problem of display brightness differences in different display areas of the display panel caused by a large Vss IR Drop, and improving the brightness uniformity of the display panel.

[0100] In the display panel provided in the above embodiments, the partition structure 14 includes a first partition portion and a second partition portion 142 stacked together. The first partition portion is located between the second partition portion 142 and the substrate. The first partition portion includes a single-layer first partition layer 141, and the partition structure 14 forms a notch on the side of the first partition layer 141. This arrangement helps to reduce the number of film layers included in the partition structure 14 as a whole. When the second partition portion 142 includes only one film layer, only a process of depositing and etching two film layers is required; when the second partition portion 142 includes two film layers, only a process of depositing and etching three film layers is required. Therefore, in the display panel provided in the above embodiments, the manufacturing process of the partition structure 14 can be effectively simplified, the manufacturing process time can be shortened, and defects generated during deposition and etching can be reduced, thereby effectively improving the manufacturing yield and increasing production volume.

[0101] The display device provided in this embodiment of the present disclosure, when including the above-described display panel, also has the above-described beneficial effects, which will not be repeated here.

[0102] This disclosure also provides a method for manufacturing a display panel, used to manufacture the display panel provided in the above embodiments; the manufacturing method includes:

[0103] An auxiliary electrode layer 10 is fabricated on a substrate.

[0104] A partition structure 14 is formed on the side of the auxiliary electrode layer 10 facing away from the substrate. The partition structure 14 includes a first partition portion and a second partition portion 142 stacked together. The first partition portion is located between the second partition portion 142 and the substrate. The first partition portion includes a single layer of first partition layer 141. The partition structure 14 forms a notch on the side of the first partition layer 141.

[0105] A cathode layer 13 is fabricated, which is broken at the notch to form a first cathode portion 131 and a second cathode portion 132 that are independent of each other. The first cathode portion 131 is located on the side of the second partition portion 142 facing away from the substrate, and the second cathode portion 132 is electrically connected to the auxiliary electrode layer 10 at the notch.

[0106] For example, the auxiliary electrode layer 10 can be disposed in the same layer and with the same material as the source and drain metal layer in the display panel, so that the auxiliary electrode and the source and drain metal layer can be formed simultaneously in the same patterning process, but it is not limited to this.

[0107] For example, the cathode layer 13 is made of a transparent conductive material, such as IZO (indium zinc oxide), but is not limited to this.

[0108] The display panel manufactured using the method provided in this embodiment includes the auxiliary electrode layer 10, the cathode layer 13, and the partition structure 14. The partition structure 14 is located on the side of the auxiliary electrode layer 10 facing away from the substrate, and the side of the partition structure 14 has a notch, so that the cathode layer 13 can be electrically connected to the auxiliary electrode layer 10 at the notch, thereby effectively reducing the resistance of the cathode layer 13, improving the problem of different display brightness differences in different display areas of the display panel caused by a large Vss IR Drop, and improving the brightness uniformity of the display panel.

[0109] In the display panel manufactured using the method provided in this embodiment, the partition structure 14 includes a first partition portion and a second partition portion 142 stacked together. The first partition portion is located between the second partition portion 142 and the substrate. The first partition portion includes a single-layer first partition layer 141, and the partition structure 14 forms a notch on the side of the first partition layer 141. This configuration helps to reduce the number of film layers included in the partition structure 14 as a whole. When the second partition portion 142 includes only one film layer, only a process of depositing and etching two film layers is required; when the second partition portion 142 includes two film layers, only a process of depositing and etching three film layers is required. Therefore, in the display panel manufactured using the method provided in this embodiment, the manufacturing process of the partition structure 14 can be effectively simplified, the manufacturing process time can be shortened, and defects generated during deposition and etching can be reduced, thereby effectively improving the manufacturing yield and increasing production volume.

[0110] In some embodiments, the steps of fabricating the partition structure 14 specifically include:

[0111] The first barrier material layer is formed by deposition;

[0112] A second partition portion 142 material layer is deposited on the side of the first partition material layer facing away from the substrate.

[0113] An etching process is used to simultaneously pattern the material layer of the second partition portion 142 and the first partition material layer to form the first partition layer 141 and the second partition portion 142.

[0114] For example, the deposition process may be selected as vapor deposition, chemical vapor deposition, etc., but is not limited to these.

[0115] For example, the etching process includes a wet etching process, which uses an etching solution for etching.

[0116] Using the above steps to manufacture the partition structure 14 can effectively simplify the manufacturing process of the partition structure 14 and reduce the manufacturing cost of the display panel.

[0117] In some embodiments, the first partition layer 141 includes a columnar polycrystalline silicon nitride film layer, and the second partition portion 142 includes a single-layer second partition layer; the steps of fabricating the partition structure 14 specifically include:

[0118] Columnar polycrystalline silicon nitride thin films are deposited to form them.

[0119] A second barrier material layer is deposited on the side of the columnar polycrystalline silicon nitride thin film facing away from the substrate.

[0120] An etching process is used to simultaneously pattern the second barrier material layer and the columnar polycrystalline silicon nitride thin film to form the columnar polycrystalline silicon nitride film layer and the second barrier layer.

[0121] For example, the step of depositing a columnar polycrystalline silicon nitride thin film specifically includes: using silane and nitrogen in a ratio of 1:30 to 1:100, and employing plasma vapor deposition, to deposit a columnar polycrystalline silicon nitride thin film at a process temperature below 230°C.

[0122] For example, the ratio of silane to nitrogen can be between 1:30 and 1:100, with endpoint values ​​being acceptable.

[0123] The above-described manufacturing method only requires the deposition and etching of two film layers, which can effectively simplify the manufacturing process of the partition structure 14, shorten the manufacturing process time, and reduce the defects generated during deposition and etching, thereby effectively improving the manufacturing yield and increasing the output.

[0124] In some embodiments, the first partition layer 141 includes a single conductive metal layer, and the second partition portion 142 includes a stacked columnar polycrystalline silicon nitride film and an indium tin oxide layer; the steps of fabricating the partition structure 14 specifically include:

[0125] A conductive metallic material layer is deposited to form the layer.

[0126] A columnar polycrystalline silicon nitride thin film is deposited on the side of the conductive metal material layer facing away from the substrate.

[0127] An indium tin oxide layer is deposited on the side of the columnar polycrystalline silicon nitride thin film facing away from the substrate.

[0128] An etching process is used to simultaneously pattern the indium tin oxide material layer, the columnar polycrystalline silicon nitride thin film, and the conductive metal material layer to form the single-layer conductive metal layer, the columnar polycrystalline silicon nitride film layer, and the indium tin oxide layer; the orthographic projection of the columnar polycrystalline silicon nitride film layer on the substrate coincides with the orthographic projection of the indium tin oxide layer on the substrate.

[0129] For example, the step of depositing a columnar polycrystalline silicon nitride thin film specifically includes: using silane and nitrogen in a ratio of 1:30 to 1:100, and employing plasma vapor deposition, to deposit a columnar polycrystalline silicon nitride thin film at a process temperature below 230°C.

[0130] The above-described manufacturing method only requires the deposition and etching of three film layers, which can effectively simplify the manufacturing process of the partition structure 14, shorten the manufacturing process time, and reduce defects generated during deposition and etching, thereby effectively improving the manufacturing yield and increasing production.

[0131] It should be noted that the signal line extending in a certain direction means that the signal line includes a main part and a secondary part connected to the main part. The main part is a line, line segment, or strip-shaped body. The main part extends in a certain direction, and the length of the main part extending in a certain direction is greater than the length of the secondary part extending in other directions.

[0132] It should be noted that, in the embodiments of this disclosure, "same layer" can refer to film layers located on the same structural layer. Alternatively, for example, film layers located on the same layer can be layer structures formed by using the same film deposition process to form a specific pattern, and then patterning the film layer using the same photomask through a single patterning process. Depending on the specific pattern, the single patterning process may include multiple exposure, development, or etching processes, and the specific pattern in the formed layer structure can be continuous or discontinuous. These specific patterns may also be at different heights or have different thicknesses.

[0133] In the various method embodiments of this disclosure, the sequence numbers of each step are not intended to limit the order of the steps. For those skilled in the art, any changes in the order of the steps are within the scope of protection of this disclosure without any creative effort.

[0134] It should be noted that the various embodiments in this specification are described in a progressive manner, and the same or similar parts between the various embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, the method embodiments are basically similar to the product embodiments, so the description is relatively simple, and the relevant parts can be referred to the description of the product embodiments.

[0135] Unless otherwise defined, the technical or scientific terms used in this disclosure shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” and similar terms used in this disclosure do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as “comprising” or “including” mean that the element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, without excluding other elements or objects. Terms such as “connection,” “coupled,” or “linked” are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. Terms such as “upper,” “lower,” “left,” and “right” are used only to indicate relative positional relationships, and these relative positional relationships may change accordingly when the absolute position of the described objects changes.

[0136] It is understandable that when a component such as a layer, film, region, or substrate is referred to as being "above" or "below" another component, the component may be "directly" located "above" or "below" the other component, or there may be intermediate components present.

[0137] In the description of the above embodiments, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0138] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A display panel, comprising: A substrate and an auxiliary electrode layer, a cathode layer, and a partition structure disposed on the substrate; The partition structure is located on the side of the auxiliary electrode layer facing away from the substrate. The partition structure includes a first partition portion and a second partition portion stacked together. The first partition portion is located between the second partition portion and the substrate. The first partition portion includes a single-layer first partition layer. The partition structure forms a notch on the side of the first partition layer. The cathode layer is broken at the notch to form a first cathode portion and a second cathode portion that are independent of each other. The first cathode portion is located on the side of the second partition portion facing away from the substrate, and the second cathode portion is electrically connected to the auxiliary electrode layer at the notch.

2. The display panel according to claim 1, wherein, The display panel further includes a connecting electrode layer, which is located between the first partition layer and the auxiliary electrode layer, and the second cathode portion is electrically connected to the auxiliary electrode layer at the notch through the connecting electrode layer.

3. The display panel according to claim 2, wherein, The connecting electrode layer comprises a single-layer film.

4. The display panel according to claim 2, wherein, The orthographic projection of the first partition layer on the substrate is located inside the orthographic projection of the second partition portion on the substrate, and the orthographic projection of the edge portion of the second partition portion on the substrate surrounds the orthographic projection of the first partition layer on the substrate. The orthographic projection of the second partition portion on the substrate is located inside the orthographic projection of the connecting electrode layer on the substrate, and the orthographic projection of the edge portion of the connecting electrode layer on the substrate surrounds the orthographic projection of the second partition portion on the substrate.

5. The display panel according to any one of claims 1 to 4, wherein, The first partition layer includes a columnar polycrystalline silicon nitride film.

6. The display panel according to claim 5, wherein, The second partition portion includes a single-layer second partition layer.

7. The display panel according to any one of claims 1 to 4, wherein, The first partition layer comprises a single layer of conductive metal.

8. The display panel according to claim 7, wherein, The second partition portion includes a columnar polycrystalline silicon nitride film and an indium tin oxide layer stacked together, wherein the columnar polycrystalline silicon nitride film is located between the indium tin oxide layer and the substrate; the orthographic projection of the columnar polycrystalline silicon nitride film on the substrate coincides with the orthographic projection of the indium tin oxide layer on the substrate.

9. The display panel according to any one of claims 2 to 4, wherein, The display panel further includes a light-emitting functional layer, which is broken at the notch to form a first light-emitting functional portion and a second light-emitting functional portion that are independent of each other. The first light-emitting functional portion is located between the first cathode portion and the second partition portion, and at least a portion of the second light-emitting functional portion is located between the second cathode portion and the connecting electrode layer.

10. The display panel according to claim 1, wherein, The auxiliary electrode layer includes auxiliary electrode lines and a plurality of auxiliary electrode patterns respectively coupled to the auxiliary electrode lines, the plurality of auxiliary electrode patterns being arranged sequentially along the extension direction of the auxiliary electrode lines; The partition structure is located on the side of the auxiliary electrode pattern facing away from the substrate, and the second cathode portion is electrically connected to the auxiliary electrode pattern at the notch.

11. A display device comprising a display panel as claimed in any one of claims 1 to 10.

12. A method for manufacturing a display panel, used to manufacture a display panel as described in any one of claims 1 to 10; the method comprising: An auxiliary electrode layer is fabricated on a substrate. A partition structure is formed on the side of the auxiliary electrode layer facing away from the substrate. The partition structure includes a first partition portion and a second partition portion stacked together. The first partition portion is located between the second partition portion and the substrate. The first partition portion includes a single layer of first partition layer. The partition structure forms a notch on the side of the first partition layer. A cathode layer is fabricated, which is broken at the notch to form a first cathode portion and a second cathode portion that are independent of each other. The first cathode portion is located on the side of the second partition portion facing away from the substrate, and the second cathode portion is electrically connected to the auxiliary electrode layer at the notch.

13. The method for manufacturing a display panel according to claim 12, wherein, The specific steps involved in constructing a partition structure include: The first barrier material layer is formed by deposition; A second partition material layer is deposited on the side of the first partition material layer facing away from the substrate. An etching process is used to simultaneously pattern the material layer of the second partition portion and the material layer of the first partition portion to form the first partition layer and the second partition portion.

14. The method for manufacturing a display panel according to claim 13, wherein, The first partition layer includes a columnar polycrystalline silicon nitride film layer, and the second partition portion includes a single-layer second partition layer; the steps for fabricating the partition structure specifically include: Columnar polycrystalline silicon nitride thin films are deposited to form them. A second barrier material layer is deposited on the side of the columnar polycrystalline silicon nitride thin film facing away from the substrate. An etching process is used to simultaneously pattern the second barrier material layer and the columnar polycrystalline silicon nitride thin film to form the columnar polycrystalline silicon nitride film layer and the second barrier layer.

15. The method for manufacturing a display panel according to claim 13, wherein, The first partition layer includes a single conductive metal layer, and the second partition portion includes a stacked columnar polycrystalline silicon nitride film layer and an indium tin oxide layer; the steps for fabricating the partition structure specifically include: A conductive metallic material layer is deposited to form the layer. A columnar polycrystalline silicon nitride thin film is deposited on the side of the conductive metal material layer facing away from the substrate. An indium tin oxide layer is deposited on the side of the columnar polycrystalline silicon nitride thin film facing away from the substrate. An etching process is used to simultaneously pattern the indium tin oxide material layer, the columnar polycrystalline silicon nitride thin film, and the conductive metal material layer to form the single-layer conductive metal layer, the columnar polycrystalline silicon nitride film layer, and the indium tin oxide layer; the orthographic projection of the columnar polycrystalline silicon nitride film layer on the substrate coincides with the orthographic projection of the indium tin oxide layer on the substrate.

16. The method for manufacturing a display panel according to claim 14 or 15, wherein, The specific steps involved in depositing columnar polycrystalline silicon nitride thin films include: Using silane and nitrogen in a ratio of 1:30 to 1:100, columnar polycrystalline silicon nitride thin films are deposited at process temperatures below 230°C via plasma vapor deposition.

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