Substrate support apparatus

Abstract

The present application provides a substrate support apparatus, comprising: a chuck, having a support surface, and configured to support a substrate; a plurality of Bernoulli holes, formed on the support surface to form a first annular region, wherein the plurality of Bernoulli holes are connected to a first flow regulating element, and the first flow regulating element is configured to regulate the flow rate of gas supplied from the Bernoulli holes; and a plurality of positioning pins, configured to clamp the substrate, wherein a group of cleaning holes are formed on the inner side of each positioning pin, the cleaning holes are connected to a second flow regulating element, and the second flow regulating element is configured to regulate the flow rate of gas supplied from the cleaning holes. In the present application, the flow rate of the gas supplied from the Bernoulli holes and the flow rate of the gas supplied from the cleaning holes are separately controlled, so that the flow rate of the gas supplied from the cleaning holes can be regulated without affecting the flow rate of the gas supplied from the Bernoulli holes, thereby optimizing the lateral etch dimensions in both the region of a substrate edge away from the positioning pins and the region near the positioning pins.

Description

Substrate support device Technical Field

[0001] This application relates to the field of semiconductor manufacturing equipment, and in particular to a substrate support device. Background Technology

[0002] In the back-side processing of a substrate, the substrate is placed on a Bernoulli chuck with the back side (non-device side) facing upwards and the front side (device side) facing downwards towards the Bernoulli chuck. The Bernoulli chuck holds and supports the substrate without direct contact. During back-side processing, a processing solution is sprayed onto the back side of the substrate. This process can lead to the processing solution overflowing onto the front side of the substrate and causing lateral etching at the edges. If the lateral etching is large, it can damage the pattern on the front side of the substrate.

[0003] Therefore, it is necessary to propose a substrate support device to improve the side etching problem on the front side of the substrate. Summary of the Invention

[0004] The purpose of this application is to provide a substrate support device to solve the problem in the prior art where the processing liquid on the back side of the substrate overflows to the front side of the substrate and causes side etching on the front side of the substrate.

[0005] To achieve the above and other related objectives, this application provides a substrate support device, comprising:

[0006] A chuck, having a support surface, is used to support a substrate;

[0007] Multiple Bernoulli orifices are disposed on the support surface to form a first annular region. The multiple Bernoulli orifices are connected to a first flow regulating element, which is used to adjust the flow rate of the gas supplied by the Bernoulli orifices.

[0008] Multiple positioning pins are used to clamp the substrate; each positioning pin has a set of cleaning holes on its inner side, the cleaning holes being connected to a second flow regulating element, the second flow regulating element being used to adjust the flow rate of the gas supplied by the cleaning holes.

[0009] Furthermore, it also includes a boss located on the periphery of the support surface and protruding upward on the support surface.

[0010] Furthermore, the boss has an inner sidewall near the center of the chuck, and the inner sidewall is perpendicular to the support surface.

[0011] Furthermore, the positioning pin has an inner wall near the center of the chuck, and the inner wall is provided with a positioning groove. The opening width of the positioning groove in the vertical direction is greater than the thickness of the substrate. The positioning groove is used to engage with the outer peripheral edge of the substrate to clamp the substrate.

[0012] Furthermore, it also includes a rotating mechanism disposed below the chuck for driving the chuck to rotate; the rotating mechanism includes a rotating shaft, which is fixedly connected to the chuck; wherein, multiple air intake pipes are provided inside the rotating shaft, and the air intake pipes are respectively connected to the Bernoulli orifice and the cleaning orifice.

[0013] Furthermore, the rotating mechanism also includes a fixing member and a driving member. The fixing member is sleeved outside the rotating shaft, and the driving member is used to drive the rotating shaft to rotate.

[0014] Furthermore, the chuck has multiple air passages inside, one end of each air passage is connected to the Bernoulli orifice or the cleaning orifice, and the other end of each air passage is connected to the air intake pipe.

[0015] Furthermore, the plurality of air intake pipes include a first air intake pipe and a second air intake pipe, which are axially arranged inside the rotating shaft; the rotating mechanism is provided with a first air inlet and a second air inlet; one end of the first air intake pipe is connected to the first air inlet, and the other end of the first air intake pipe is connected to the plurality of Bernoulli holes; one end of the second air intake pipe is connected to the second air inlet, and the other end of the second air intake pipe is connected to a plurality of sets of cleaning holes.

[0016] Furthermore, the first air inlet and / or the second air inlet are disposed on the side wall of the fixing member, and the inner side wall of the fixing member is provided with an annular groove, through which the air inlet pipe is connected to the corresponding air inlet.

[0017] Furthermore, the first air inlet and / or the second air inlet are located at the bottom end of the rotating shaft.

[0018] Furthermore, a plurality of lifting holes are disposed on the support surface, the plurality of lifting holes forming a second annular region, the plurality of lifting holes being used to supply gas to the substrate; the second annular region is concentric with the first annular region and is located inside the first annular region.

[0019] Furthermore, the lifting port and the cleaning port are connected to the same air passage.

[0020] Furthermore, it also includes a valve, the lift hole being connected to the valve, the valve being used to open or close the gas supplied by the lift hole.

[0021] As described above, this application provides a substrate support device with the following advantages: This application controls the flow rate of gas supplied by the Bernoulli orifice and the cleaning orifice separately, and can adjust the flow rate of gas supplied by the cleaning orifice without affecting the flow rate of gas supplied by the Bernoulli orifice, so as to improve the side etching size of the area of ​​the substrate edge far from the positioning pin and the side etching size of the area near the positioning pin.

[0022] Overview of the attached figures

[0023] Figure 1 shows a schematic diagram of the substrate support device in Embodiment 1 of this application;

[0024] Figure 2 shows a top view of the chuck of the substrate support device in Embodiment 1 of this application;

[0025] Figure 3 shows a cross-sectional view of the substrate support device in Embodiment 1 of this application;

[0026] Figure 4 shows a structural block diagram of the control part of the substrate support device in Embodiment 1 of this application;

[0027] Figure 5 shows a cross-sectional view of the substrate support device in Embodiment 2 of this application;

[0028] Figure 6 shows a cross-sectional view of the substrate support device in Embodiment 3 of this application;

[0029] Figure 7 shows a structural block diagram of the control part of the substrate support device in Embodiment 3 of this application.

[0030] Preferred embodiments of this application

[0031] The following specific examples illustrate the implementation of this application. Those skilled in the art can easily understand other advantages and effects of this application from the content disclosed in this specification. This application can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this application.

[0032] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of this application. Although the illustrations only show components relevant to this application and are not drawn according to the actual number, shape, and size of components in implementation, the shape, quantity, and proportion of each component in actual implementation can be arbitrarily changed, and the layout of the components may also be more complex. In addition, the same reference numerals in multiple figures represent the same or equivalent parts or components.

[0033] Example 1

[0034] Figure 1 is a cross-sectional view of the substrate support device according to Embodiment 1 of this application. Figure 2 is a top view of the chuck of the substrate support device according to Embodiment 1 of this application. Referring to Figures 1 and 2, this application proposes a substrate support device for back-side processing of a substrate. The substrate support device includes a chuck 11, a plurality of Bernoulli holes 12, and a plurality of positioning pins 13.

[0035] The chuck 11 has a support surface 111 for supporting the substrate w. A boss 112 is provided on the chuck 11, integrally formed with the chuck 11. The boss 112 protrudes upwards from the periphery of the support surface 111, forming a ring shape. The upper surface of the boss 112 is higher than the support surface 111, and the inner wall of the boss 112, together with the support surface 111, forms a groove for accommodating the substrate w. The inner wall of the boss 112 is perpendicular to the support surface 111, preventing the substrate w from contacting the inner wall of the boss 112 when it sinks, thus avoiding any impact on the front surface of the substrate w.

[0036] As shown in Figure 2, multiple Bernoulli holes 12 form a first annular region 113 on the support surface 111. The multiple Bernoulli holes 12 are used to supply gas to the substrate w to adjust the distance between the substrate w and the support surface 111. By adjusting the flow rate of the gas supplied through the Bernoulli holes 12, the lower surface of the substrate w is positioned below the upper surface of the boss 112, thus ensuring that the distance between the substrate w and the support surface 111 is less than the height of the boss 112. Optionally, the Bernoulli holes 12 are inclined, tilted towards the outer edge of the chuck 11, so that the gas outlet direction is towards the outer edge of the chuck 11.

[0037] When performing back-side processing on substrate w, if the lower surface of substrate w is higher than the upper surface of boss 112, the gap between boss 112 and the edge of substrate w will increase, resulting in a decrease in the exhaust pressure at the gap. Consequently, there is a risk of processing liquid overflowing onto the lower surface of substrate w. If substrate w is completely lower than the upper surface of boss 112, on the one hand, the processing liquid on the upper surface of substrate w will splash onto the inner wall of boss 112, causing splashing and affecting the normal back-side processing process. On the other hand, there is a risk that the lower surface of substrate w will come into contact with the support surface 111 of chuck 11. Therefore, preferably, as shown in FIG1, this application supplies gas to substrate w through Bernoulli hole 12, so that the lower surface of substrate w is lower than the upper surface of boss 112 and the upper surface of substrate w is higher than the upper surface of boss 112, and this position is maintained. This reduces the blowing height of substrate w, increases the exhaust pressure between the edge of substrate w and boss 112, and helps prevent the processing liquid on the upper surface of substrate w from overflowing onto the lower surface of substrate w.

[0038] Referring again to Figure 1, multiple positioning pins 13 are disposed on the edge of the support surface 111. Each positioning pin 13 has a positioning groove 131 on its inner wall for engaging with the outer peripheral edge of the substrate w to hold the substrate w in place. Specifically, the opening width of the positioning groove 131 is greater than the thickness of the substrate, which can limit the height of the substrate w being blown up by the gas, thus keeping the substrate w at a fixed height.

[0039] Referring to Figure 2, the substrate support device also includes multiple sets of cleaning holes 14, which are disposed on the support surface 111 of the chuck 11. Each set of cleaning holes 14 includes multiple cleaning air holes. A set of cleaning holes 14 is provided inside each positioning pin 13 to supply gas towards the edge of the substrate w, preventing chemical liquid on the back side of the substrate w from flowing down the positioning pin 13 to the front side of the substrate w. Due to the obstruction of the positioning pin 13, the gas supplied through the Bernoulli hole 12 cannot reach the area near the positioning pin 13 on the edge of the substrate w. Therefore, providing cleaning holes 14 inside the positioning pin 13 can compensate for the airflow in the area near the positioning pin 13. Optionally, the cleaning holes 14 are inclined, tilted towards the outer edge of the chuck 11, so that the gas is blown towards the positioning pin 13.

[0040] Referring to Figure 2, the substrate support device further includes a plurality of lifting holes 15, which are disposed on the support surface 111 of the chuck 11, forming a second annular region 114. The second annular region 114 is concentrically distributed with the first annular region 113 and is located inside the first annular region 113. The plurality of lifting holes 15 are used to supply gas to the substrate w to hold the substrate w at a position where the lower surface of the substrate w is higher than the upper surface of the boss 112, facilitating the robot arm to pick up and place the substrate w from the substrate support device. Optionally, the lifting holes 15 are vertically arranged.

[0041] In addition, the gas supplied through the Bernoulli orifice 12, the riser orifice 15, and the cleaning orifice 14 is typically an inert gas or nitrogen. The gases supplied through the Bernoulli orifice 12, the riser orifice 15, and the cleaning orifice 14 can be the same or different.

[0042] Referring to Figure 3, the substrate support device further includes a rotating mechanism disposed below the chuck 11 for driving the chuck 11 to rotate. The rotating mechanism includes a rotating shaft 16, a fixing member 17, and a driving member (not shown in the figure). The rotating shaft 16 is fixedly connected to the chuck 11. The fixing member 17 is sleeved on the rotating shaft 16. The rotating shaft 16 is connected to the driving member, which drives the rotating shaft 16 to rotate, thereby causing the chuck 11 to rotate.

[0043] The chuck 11 also has multiple air passages inside, which are connected to the Bernoulli orifice 12, the cleaning orifice 14, and the lift orifice 15, respectively. For example, all Bernoulli orifices 12 / cleaning orifices 14 / lift orifices 15 are connected to an annular air passage, which is connected to the air passages inside the chuck 11. The rotating mechanism has multiple air inlet pipes inside, which are connected to the corresponding air passages inside the chuck. The gas supply source supplies gas to the Bernoulli orifice 12, the cleaning orifice 14, and the lift orifice 15 through the air inlet pipes and air passages.

[0044] Figure 4 shows a structural block diagram of the control section in the substrate support device of this embodiment. In some embodiments, the substrate support device further includes a first flow regulating element 121 and a controller 10. The first flow regulating element 121 communicates with a plurality of Bernoulli orifices 12. The controller 10 is connected to the first flow regulating element 121. The controller 10 controls the first flow regulating element 121 to regulate the flow rate of gas supplied by the plurality of Bernoulli orifices 12. The first flow regulating element 121 may be an MFC (mass flow controller). The controller 10 is also connected to a plurality of positioning pins 13 to control the plurality of positioning pins 13 to clamp or release the substrate.

[0045] In Embodiment 1, referring to FIG4, the substrate support device further includes a second flow regulating element 141, which communicates with multiple sets of cleaning holes 14. A controller 10 is connected to the second flow regulating element 141, and the controller 10 controls the second flow regulating element 141 to regulate the flow rate of gas supplied by the multiple sets of cleaning holes 14. The second flow regulating element 141 may be an MFC (mass flow controller).

[0046] In Embodiment 1, as shown in Figures 1 to 4, the cleaning orifice 14 and the lifting orifice 15 are connected to the same air duct. Therefore, the flow rate of gas supplied by multiple sets of cleaning orifices 14 and lifting orifices 15 can be adjusted simultaneously by the second flow regulating element 141. The Bernoulli orifice 12 is connected to another air duct, and the flow rate of gas supplied by the Bernoulli orifice 12 is adjusted by the first flow regulating element 121. In existing substrate support devices, to reduce structural and operational complexity, the Bernoulli orifice and the cleaning orifice are typically connected to the same air duct, and the flow rate of gas supplied by both the Bernoulli orifice and the cleaning orifice is adjusted simultaneously by a single flow regulating element. The flow rate of gas supplied by the Bernoulli orifice affects the lateral etching result in the area of ​​the substrate edge far from the locating pin, while the flow rate of gas supplied by the cleaning orifice affects the lateral etching result in the area of ​​the substrate edge near the locating pin. If the lateral etching dimensions of both the area near and far from the locating pin are to meet the process requirements, a large gas flow rate is required, which can easily lead to excessive stress in the area of ​​the substrate edge near the locating pin, affecting the service life of the locating pin. Therefore, this application connects the Bernoulli orifice and the cleaning orifice to different gas channels to control the gas flow rate supplied by each separately.

[0047] Referring to Figure 3, in some embodiments, the fixing member 17 is provided with a first air inlet 122 and a second air inlet 142, and the rotating shaft 16 is correspondingly provided with a first air inlet pipe L1 and a second air inlet pipe L2. The fixing member 17 has a first annular groove 123 and a second annular groove 143 on its inner side for accommodating gas, and these grooves are respectively connected to the first air inlet 122 and the second air inlet 142. The first air inlet 122 and the second air inlet 142 are respectively connected to the gas supply sources of the Bernoulli orifice 12 and the cleaning orifice 14. One end of the first air inlet pipe L1 is connected to the first annular groove 123, and the other end is connected to the Bernoulli orifice 12 on the chuck 11. The first air inlet pipe L1 is also connected to the first flow regulating element 121. One end of the second air inlet pipe L2 is connected to the second annular groove 143, and the other end is connected to the cleaning orifice 14 and the lifting orifice 15 on the chuck 11. The second air inlet pipe L2 is also connected to the second flow regulating element 141.

[0048] Referring to Figure 3, in some embodiments, a seal 170 is provided between the rotating shaft 16 and the fixing member 17 to isolate gas and prevent gas leakage into the gap between the rotating shaft 16 and the fixing member 17. Exemplarily, the seal 170 is a labyrinth groove.

[0049] During the back-side processing of substrate w, gas is continuously supplied to Bernoulli holes 12 and cleaning holes 14. The flow rate of the gas supplied to Bernoulli holes 12 is adjusted by the first flow rate regulating element 121, thereby adjusting the lateral etching size of the area of ​​substrate w away from the positioning pin 13. The flow rate of the gas supplied to lifting holes 15 and cleaning holes 14 is adjusted by the second flow rate regulating element 141, thereby adjusting the lateral etching size of the area of ​​substrate w near the positioning pin 13. Furthermore, by placing the air inlet pipes of Bernoulli holes 12 and cleaning holes 14 inside the rotating shaft 16 below the chuck 11, the structure of the substrate support device is simplified, and the connection between Bernoulli holes 12 and cleaning holes 14 and the corresponding air inlet pipes is not affected when the chuck 11 rotates.

[0050] Furthermore, the gas supplied through the lift hole 15 can also flatten the warped substrate w. In existing substrate support devices, the lift hole is used to supply gas during the substrate transport stage. However, in Embodiment 1, the lift hole and the cleaning hole are connected to a single air channel. Therefore, gas can be continuously supplied to the substrate through the lift hole during the process, which not only maintains the position of the substrate but also flattens the warped substrate.

[0051] Example 2

[0052] Example 2 provides a substrate support device, which differs from Example 1 in that:

[0053] One or more of the first air inlet 122 and the second air inlet 242 are disposed at the bottom end of the rotating shaft 26. As shown in FIG5, the second air inlet pipe L21 is disposed inside the rotating shaft 26 along the axial direction of the rotating shaft 26. One end of the second air inlet pipe L21 is connected to the second air inlet 242, and the other end is connected to the cleaning hole 14 and the lifting hole 15 on the chuck 11. The arrangement of the first air inlet 122, the first annular groove 123 and the first air inlet pipe L1 is the same as in Embodiment 1. In this embodiment, the air inlet is disposed at the bottom end of the rotating shaft 26 to prevent gas leakage into the gap between the rotating shaft 26 and the fixing member 27.

[0054] The other settings in this embodiment are the same as in Embodiment 1, and will not be repeated here.

[0055] Example 3

[0056] Embodiment 3 provides a substrate support device, which differs from Embodiment 1 in that the cleaning hole 24 and the lifting hole 25 are connected to different air channels and supply gas to the substrate w through different air inlet pipes.

[0057] Referring to Figure 7, a structural block diagram of the control section in the substrate support device of this embodiment is shown. As shown in Figures 6 and 7, the fixing member 37 is provided with a first air inlet 122 and a second air inlet 242, and the bottom end of the rotating shaft 36 is provided with a third air inlet 251. The rotating shaft 36 is provided with a first air inlet pipe L1, a second air inlet pipe L22, and a third air inlet pipe L3. The fixing member 37 is provided with a first annular groove 123 and a second annular groove 243 on its inner side for accommodating gas, and is respectively connected to the first air inlet 122 and the second air inlet 242. One end of the first air inlet pipe L1 is connected to the first annular groove 123, and the other end is connected to the Bernoulli hole 12 on the chuck 21. The first air inlet pipe L1 is also connected to the first flow regulating element 121. One end of the second air inlet pipe L22 is connected to the second annular groove 243, and the other end is connected to the cleaning hole 24 on the chuck 21. The second air inlet pipe L22 is also connected to the second flow regulating element 241. The third intake pipe L3 is arranged axially inside the rotating shaft 36. One end of the third intake pipe L3 is connected to the third intake port 251, and the other end is connected to the lifting hole 25 on the chuck 21. The third intake pipe L3 is also connected to a valve 252, which is connected to the controller 20 and is used to open or close the gas supplied by the lifting hole 25.

[0058] During the back-side processing of substrate w, gas is continuously supplied to Bernoulli via 12 and cleaning via 24. The flow rate of gas supplied to Bernoulli via 12 is adjusted by the first flow rate regulating element 121, thereby adjusting the lateral etching size of the area of ​​substrate w away from positioning pin 13. The flow rate of gas supplied to cleaning via 24 is adjusted by the second flow rate regulating element 241, thereby adjusting the lateral etching size of the area of ​​substrate w near positioning pin 13. Additionally, during the substrate w transfer phase, controller 20 controls valve 252 to open, supplying gas to lifting via 25 to maintain the position of substrate w for loading and unloading.

[0059] The other settings in this embodiment are the same as in Embodiment 1, and will not be repeated here.

[0060] In the aforementioned embodiments one to three, a positioning pin driving mechanism is also included. This positioning pin driving mechanism is a cylinder, as shown in Figure 3. Gas is supplied to the cylinder through the air intake pipe L4 to control the positioning pin 13 to clamp and release the substrate w. The air intake pipe L4 is disposed inside the rotating shaft 16, and the corresponding air inlet can be disposed on the side wall of the fixing member 17 or the bottom end of the rotating shaft 16, referring to the aforementioned first air intake pipe L1 and second air intake pipe L2, which will not be described again here.

[0061] The above embodiments are merely illustrative of the principles and effects of this application and are not intended to limit this application. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this application. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this application should still be covered by the claims of this application.

Claims

1. A substrate support device, characterized in that, include: A chuck, having a support surface, is used to support a substrate; Multiple Bernoulli orifices are disposed on the support surface to form a first annular region. The multiple Bernoulli orifices are connected to a first flow regulating element, which is used to adjust the flow rate of the gas supplied by the Bernoulli orifices. Multiple positioning pins are used to clamp the substrate; each positioning pin has a set of cleaning holes on its inner side, the cleaning holes being connected to a second flow regulating element, the second flow regulating element being used to adjust the flow rate of the gas supplied by the cleaning holes.

2. The substrate support device according to claim 1, characterized in that, It also includes a boss located on the periphery of the support surface and protruding upward on the support surface.

3. The substrate support device according to claim 2, characterized in that, The boss has an inner wall near the center of the chuck, and the inner wall is perpendicular to the support surface.

4. The substrate support device according to claim 1, characterized in that, The positioning pin has an inner wall near the center of the chuck, and the inner wall is provided with a positioning groove. The opening width of the positioning groove in the vertical direction is greater than the thickness of the substrate. The positioning groove is used to engage with the outer peripheral edge of the substrate to hold the substrate.

5. The substrate support device according to claim 1, characterized in that, It also includes a rotating mechanism disposed below the chuck for driving the chuck to rotate; the rotating mechanism includes a rotating shaft, which is fixedly connected to the chuck; wherein, multiple air intake pipes are disposed inside the rotating shaft, and the air intake pipes are respectively connected to the Bernoulli orifice and the cleaning orifice.

6. The substrate support device according to claim 5, characterized in that, The rotating mechanism further includes a fixing component and a driving component. The fixing component is sleeved outside the rotating shaft, and the driving component is used to drive the rotating shaft to rotate.

7. The substrate support device according to claim 6, characterized in that, The chuck has multiple air passages inside, one end of each air passage is connected to the Bernoulli orifice or the cleaning orifice, and the other end of each air passage is connected to the air intake pipe.

8. The substrate support device according to claim 7, characterized in that, The plurality of air intake pipes include a first air intake pipe and a second air intake pipe, which are axially arranged inside the rotating shaft; the rotating mechanism is provided with a first air inlet and a second air inlet; one end of the first air intake pipe is connected to the first air inlet, and the other end of the first air intake pipe is connected to the plurality of Bernoulli holes; one end of the second air intake pipe is connected to the second air inlet, and the other end of the second air intake pipe is connected to a plurality of cleaning holes.

9. The substrate support device according to claim 8, characterized in that, The first air inlet and / or the second air inlet are disposed on the side wall of the fixing member, and the inner side wall of the fixing member is provided with an annular groove, through which the air inlet pipe is connected to the corresponding air inlet.

10. The substrate support device according to claim 8, characterized in that, The first air inlet and / or the second air inlet are located at the bottom end of the rotating shaft.

11. The substrate support device according to claim 7, characterized in that, Also includes: Multiple lifting holes are disposed on the support surface, the multiple lifting holes forming a second annular region, and the multiple lifting holes are used to supply gas to the substrate; The second annular region is concentric with the first annular region and is located inside the first annular region.

12. The substrate support device according to claim 11, characterized in that, The lifting port and the cleaning port are connected to the same air passage.

13. The substrate support device according to claim 11, characterized in that, It also includes a valve, the lift hole being connected to the valve, the valve being used to open or close the gas supplied by the lift hole.

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