Wafer state detection system and semiconductor process device

Abstract

Provided in the present disclosure are a wafer state detection system and a semiconductor process device. In the wafer state detection system, two first detection modules of a first detection apparatus are separately disposed on the outer side of a chamber wall of a process chamber; each first detection module comprises a first detection signal transmitting unit for transmitting a first detection signal in a first horizontal direction and a first detection signal receiving unit for receiving the first detection signal; and a controller is used for generating first detection information of a wafer on the basis of a transmission path of the first detection signal, and determining a wafer state of the wafer on the basis of the first detection information.

Description

Wafer condition inspection system and semiconductor process equipment Technical Field

[0001] This disclosure relates to the field of semiconductor manufacturing technology, and in particular to wafer condition inspection systems and semiconductor process equipment. Background Technology

[0002] Physical vapor deposition (PVD) refers to a technique that uses low-voltage, high-current arc discharge under vacuum conditions. The gas discharge evaporates the target material, causing both the evaporated material and the gas to ionize. The electric field then accelerates the ionization, causing the evaporated material and its reaction products to deposit onto a wafer. This technology is widely used in IC (Integrated Circuit), packaging, and LED (Light-Emitting Diode) industries.

[0003] In some cases, PVD process equipment uses a vacuum robot to transfer wafers to various process chambers for processing. During wafer transfer to the process chamber, a wafer centering calibration device detects the actual position of the wafer on the vacuum robot and calculates the deviation between this actual position and the pre-set transfer position in the process chamber for automatic compensation, achieving accurate wafer transfer to the process chamber. However, when the wafer is damaged and the damage location is outside the sensor optical path of the wafer centering calibration device, the damage cannot be detected. Furthermore, without a device to detect wafer damage, if a damaged wafer is transferred into the chamber, sputtering material will come into contact with the chamber base through the damaged area during processing, causing the chamber base to be sputtered with a film layer, resulting in chamber contamination. In addition, if the wafer is damaged after processing, the wafer removal process may cause secondary damage, resulting in wafer debris that will cause excessive particle counts in the chamber and make chamber recovery difficult. Summary of the Invention

[0004] In view of this, the purpose of this disclosure is to provide a wafer condition inspection system and semiconductor process equipment to alleviate the technical problem of process chamber contamination caused by wafer breakage.

[0005] In a first aspect, embodiments of this disclosure provide a wafer state inspection system applied to semiconductor process equipment, the semiconductor process equipment including at least one process chamber; the system includes a controller and at least one first detection device; wherein, the first detection device includes two first detection modules communicatively connected to the controller; the two first detection modules are respectively disposed on the outer side of the chamber wall of the process chamber; wherein, each first detection module includes a first detection signal transmitting unit and a first detection signal receiving unit, the first detection signal transmitting unit being used to transmit a first detection signal in a first horizontal direction; the first detection signal receiving unit being used to receive the first detection signal; the first horizontal direction is perpendicular to the wafer transport direction, and the transmission path of the first detection signal intersects with the wafer transport path, the transmission path of the first detection signal being a transmission path from the first detection signal transmitting unit to the wafer edge and from the wafer edge to the first detection signal receiving unit; the controller is used to generate first detection information of the wafer according to the transmission path of the first detection signal, and to determine the wafer state of the wafer according to the first detection information.

[0006] Secondly, embodiments of this disclosure also provide a semiconductor process apparatus, including at least one process chamber and the wafer condition detection system described in the first aspect.

[0007] The embodiments disclosed herein bring the following beneficial effects:

[0008] This disclosure provides a wafer condition detection system and a semiconductor process equipment wafer condition detection system. The wafer condition detection system uses a first detection device installed on the outer wall of the process chamber to detect whether the wafer is damaged. This prevents damaged wafers from being processed within the process chamber and causing contamination, thereby ensuring the service life of the semiconductor process equipment.

[0009] Other features and advantages of this disclosure will be set forth in the following description and will be apparent in part from the description or may be learned by practicing the disclosure. The objects and other advantages of this disclosure are realized and obtained through the structures particularly pointed out in the description and the drawings.

[0010] To make the above-mentioned objects, features and advantages of this disclosure more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0011] To more clearly illustrate the technical solutions in the specific embodiments or related technologies of this disclosure, the accompanying drawings used in the description of the specific embodiments or related technologies will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0012] Figure 1 is a schematic diagram of a typical PVD process equipment in related technologies;

[0013] Figure 2 is a schematic diagram of the structure of a TM transmission platform in the related technology;

[0014] Figure 3 is a schematic diagram of the detection output waveform of the transmission system in the related technology;

[0015] Figure 4 is a schematic diagram of the wafer center calibration device in the related technology;

[0016] Figure 5 is a schematic diagram of the process of vacuum robotic arm transferring and inspecting wafers in related technologies;

[0017] Figure 6 is a schematic diagram of a wafer condition detection system provided in an embodiment of this disclosure;

[0018] Figure 7 is a partial structural schematic diagram of a PVD chamber provided in an embodiment of this disclosure;

[0019] Figure 8 is a schematic diagram of the installation of a first detection device provided in an embodiment of this disclosure;

[0020] Figure 9 is a schematic diagram of the structure of a first detection module provided in an embodiment of this disclosure;

[0021] Figure 10 is a schematic diagram of wafer inspection using a first inspection device according to an embodiment of this disclosure;

[0022] Figure 11 is a schematic diagram of the working principle of a wafer condition detection system provided in an embodiment of this disclosure;

[0023] Figure 12 is a schematic diagram of another PVD chamber provided in an embodiment of this disclosure;

[0024] Figure 13 is a schematic diagram of the control principle of various motors in a PVD chamber provided in an embodiment of this disclosure;

[0025] Figure 14 is a schematic diagram of the results of the first detection information of a complete wafer provided in an embodiment of this disclosure;

[0026] Figure 15 is a schematic diagram of the results of the first detection information of a damaged wafer provided in an embodiment of this disclosure;

[0027] Figure 16 is a flowchart of a wafer condition detection system provided in an embodiment of this disclosure;

[0028] Figure 17 is a schematic diagram of the results of the first detection information when a wafer warps according to an embodiment of the present disclosure;

[0029] Figure 18 is a schematic diagram of the results of the first detection information when a wafer falls off, according to an embodiment of this disclosure.

[0030] Figure 19 is a schematic diagram of another wafer condition detection system provided in an embodiment of this disclosure;

[0031] Figure 20 is a schematic diagram of the installation of a second detection module provided in an embodiment of this disclosure;

[0032] Figure 21 is a cross-sectional view of a second detection module provided in an embodiment of this disclosure;

[0033] Figure 22 is a schematic diagram of the detection information of a complete wafer provided in an embodiment of this disclosure;

[0034] Figure 23 is a flowchart of another wafer condition detection system provided in an embodiment of this disclosure. Detailed Implementation

[0035] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, not all embodiments. Based on the embodiments of this disclosure, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this disclosure.

[0036] A typical PVD process equipment, as shown in Figure 1, includes: a loading module 1, an EFEM (Equipment Front End Module) atmospheric transport system 2, a Loadlock transition chamber 3, multiple process chambers, a TM (Transfer Module) transport platform 9, and a control system (not shown in Figure 1); among which, the multiple process chambers are: a Degas baking chamber 4, a Preclean etching chamber 5, and four different PVD reaction chambers (6-8 and 10).

[0037] In a typical PVD process, the wafer needs to go through at least the following three steps in sequence:

[0038] (1) Degassing process: Heating removes contaminants (water, volatile organic compounds, etc.) adsorbed on the wafer surface, increasing film adhesion;

[0039] (2) Preclean process: Remove oxides on the wafer to ensure high adhesion performance and low contact resistance;

[0040] (3) Sputtering deposition process (PVD): depositing metal thin films on wafer surfaces, deep hole walls, barrier layers, etc.

[0041] Therefore, during wafer transport, the wafer is first loaded into loading module 1, and then transferred to Loadlock transition chamber 3 by an atmospheric robot within the EFEM atmospheric transport system 2. After being evacuated in Loadlock transition chamber 3, the wafer is transferred to TM transport platform 9 by a vacuum robot within TM transport platform 9. Then, the wafer sequentially passes through Degas baking chamber 4 and Preclean etching chamber 5. Next, the wafer can enter one or more of PVD reaction chambers 6, 7, 8, and 10 for sputtering deposition processes, depending on process requirements. After the process is completed, the wafer is finally transferred back to loading module 1 for unloading. It should be noted that the control system can be used for equipment control, data acquisition, and processing. Different types of sputtering targets can be installed in the process chambers according to different process requirements.

[0042] Furthermore, PVD equipment can process various types of products depending on the requirements, such as pure silicon wafers, bonded wafers, resin wafers, and Takio wafers. After processing by the PVD equipment, the products undergo sputtering coating before flowing into the next processing step. With the diversification of market demands, the types of wafers will also increase, which in turn places higher demands on the stable transfer of wafers into PVD equipment. Therefore, ensuring the stable transfer of wafers to each process chamber, avoiding wafer breakage that could lead to substrate plating or excessive particle count, and reducing equipment failure rates are particularly important.

[0043] Currently, wafer transfer between process chambers is primarily accomplished by a vacuum robot within the TM transfer platform 9. Depending on the specific process, the vacuum robot transfers the wafer to a different process chamber for processing. Therefore, the TM transfer platform 9 interfaces with each process chamber, ensuring the wafer is placed at the correct position within each chamber. As shown in Figure 2, the TM transfer platform 9 includes: a vacuum platform 91, a vacuum robot 92, an amplifier 93, a sensor 94, and a reflector 95. The amplifier 93, sensor 94, and reflector 95 form an Active Wafer Centering (AWC) device, which is mounted on the vacuum platform 91.

[0044] Sensor 94 can be a retroreflective sensor that integrates the transmitter and receiver. Specifically, the transmitter of sensor 94 emits a light beam, which passes through reflector 95 and returns to the receiver. The receiver converts the received light signal into an electrical signal, which is then processed by amplifier 93. Amplifier 93 then outputs high and low levels to the controller of the wafer centering calibration device (not shown in Figure 2). The controller calculates the deviation using an internal algorithm and compensates for it to place the wafer in the correct transfer position.

[0045] In addition, during the operation of the sensor 94, when the light beam emitted by the transmitter is not blocked by the wafer, all the light returns through the reflector 95, and the amount of returned light is y1; when the light beam is blocked by the wafer, the amount of returned light is y2. The amplifier 93 is provided with a threshold x, which can be set to a reasonable value according to different wafer materials, and generally satisfies y2<x<y1. As shown in Figure 3, when the light beam of the sensor 94 is not blocked, the amplifier 93 outputs a high level 1; when the light beam of the sensor 94 is blocked, the amplifier 93 outputs a low level 0.

[0046] As shown in Figure 4, the wafer center calibration device (i.e., AWC device) further includes a controller 96. The wafer transfer position 98 is an accurate position in the process chamber that is preset for each process chamber during the equipment installation and commissioning stage or obtained through learning. When the vacuum manipulator 92 transfers the wafer 97 to the wafer transfer position 98 in the process chamber, as shown in (a) to (f) of Figure 5, the wafer 97 carried by the vacuum manipulator 92 will collide with the two sensors 94 four times in total. Specifically, first, one of the sensors 94 detects the right front edge of the wafer 97, and the other sensor 94 detects the left front edge of the wafer 97; then, both sensors 94 are blocked by the wafer 97 at the same time; next, as the vacuum manipulator 92 continues to move forward, one sensor 94 detects the right rear edge of the wafer 97, and the other sensor 94 detects the left rear edge of the wafer 97; finally, neither of the two sensors 94 is blocked by the wafer 97. Through the above process, the actual position of the wafer 97 on the vacuum manipulator 92 is measured and compared with the value preset or obtained through learning. The controller 96 calculates the deviation through its internal algorithm and performs automatic compensation until the wafer 97 is placed at the wafer transfer position 98 in the process chamber, so as to realize accurate transfer of the wafer 97.

[0047] However, when the wafer is damaged and the damaged position is outside the optical path of the sensor of the AWC device, the damage cannot be detected. Meanwhile, if there is no device for detecting wafer damage in the process chamber and a damaged wafer is transferred into the chamber, during the processing, the sputtering material will contact the chamber base through the damaged part of the wafer, which causes the chamber base to be sputtered with a film layer, resulting in chamber contamination. In addition, if the wafer is damaged after the processing, the wafer picking process may cause secondary damage to the wafer, and the resulting wafer debris will cause the particle level in the chamber to exceed the standard, and meanwhile make it difficult to restore the chamber. Therefore, how to accurately detect whether the wafer is damaged to avoid chamber contamination caused by wafer damage is an urgent problem to be solved.

[0048] Based on this, the present disclosure provides a wafer condition detection system and semiconductor process equipment. The wafer condition detection system detects whether the wafer is damaged by setting a first detection device on the outside of the process chamber wall, thereby avoiding contamination of the process chamber by the damaged wafer during the process processing and ensuring the service life of the semiconductor process equipment.

[0049] To facilitate understanding of this embodiment, the embodiments of this disclosure will be described in detail below.

[0050] This disclosure provides a wafer condition inspection system applied to semiconductor process equipment. The semiconductor process equipment includes at least one process chamber. The system includes a controller and at least one first inspection device. In practical applications, the number of first inspection devices is consistent with the number of process chambers. For ease of explanation, this disclosure uses one process chamber and one first inspection device as an example; the inspection processes of other process chambers and their corresponding first inspection devices can be referred to this disclosure.

[0051] Specifically, as shown in Figure 6, the wafer status inspection system includes a controller 61. The first inspection device includes two first inspection modules 62 communicatively connected to the controller 61. The two first inspection modules 62 are respectively disposed on the outer side of the process chamber 60. Each first inspection module 62 includes a first inspection signal transmitting unit and a first inspection signal receiving unit. The first inspection signal transmitting unit is used to transmit a first inspection signal in a first horizontal direction. The first inspection signal receiving unit is used to receive the first inspection signal. The first horizontal direction is perpendicular to the wafer transmission direction. The transmission path of the first inspection signal intersects with the wafer transmission path. The controller 61 is used to generate first inspection information for the wafer based on the transmission path of the first inspection signal. The controller 61 is also used to determine the wafer status based on the first inspection information. The wafer status includes a normal state and a damaged state. In other words, the controller 61 is also used to determine whether the wafer is damaged based on the first inspection information. A normal state refers to a wafer that is intact (especially with intact edges), without damage, warping, chipping, or other abnormalities, and whose outer contour is a standard wafer shape. A damaged state refers to a wafer that has physical damage (especially with edge damage). A damaged wafer is an anomaly, such as having at least one missing or broken edge that results in an incomplete outer contour.

[0052] For wafer breakage detection within process chambers (such as PVD chambers), the common technical solution involves installing a camera or sensor inside the chamber. However, this approach places extremely high demands on the camera or sensor probes. The probes must be protected from coatings, as this will affect image acquisition and lead to misjudgments. Furthermore, installing the detection device inside the chamber is challenging. Due to the limited volume of the PVD chamber, sufficient space must be reserved to ensure the probe's measurement angle; however, other process components (such as kits) are also installed within the chamber, potentially resulting in insufficient space for the probe to acquire images, thus affecting measurement results. Additionally, the connection cable between the probe and the controller requires high performance, needing to meet conditions such as high temperature resistance, interference prevention, and good vacuum sealing. These factors all contribute to the significant difficulties in installing the probe inside the chamber.

[0053] Based on this, in the system of this embodiment, the two first detection modules 62 of the first detection device are disposed on the outer side of the cavity wall, and the transmission path of the first detection signal intersects with the wafer transfer path. The transmission path of the first detection signal is the transmission path from the first detection signal transmitting unit to the wafer edge and from the wafer edge to the first detection signal receiving unit. The wafer transfer direction is the direction in which the wafer is transferred from the wafer transfer port into the process chamber to the wafer transfer position. The wafer transfer path is the path from the wafer transfer port to the wafer transfer position. Since the transmission path of the first detection signal intersects with the wafer transfer path, the first detection signal can reach the wafer edge. Based on this, the controller can easily generate the first detection information of the wafer according to the transmission path of the first detection signal, and determine whether the wafer is damaged according to the first detection information. Thus, by using the first detection device disposed on the outer side of the cavity wall, the detection of whether the wafer inside the process chamber is damaged is realized. At the same time, this wafer status detection system also avoids the problems of installation difficulties and detection limitations caused by the limited space inside the cavity, and improves the accuracy of wafer damage detection.

[0054] In some embodiments, two first detection modules 62 are symmetrically arranged on both sides of the wafer transmission path, and the transmission path of the first detection signal is orthogonal to the wafer transmission path.

[0055] Specifically, for the wafer in the process chamber, two first detection modules 62 are set on both sides of the wafer transport path to ensure that the portions of the same wafer on both sides of the wafer transport path are detected by the corresponding first detection module 62. At the same time, during the detection process, the transmission path of the first detection signal is also ensured to be orthogonal to the wafer transport path, thereby ensuring the detection accuracy of the first detection module 62 on the wafer and thus improving the wafer damage detection accuracy.

[0056] In some embodiments, the controller is further configured to determine the transmission path of the first detection signal based on the time difference between the first detection signal emitted by the first detection signal transmitting unit and the first detection signal received by the first detection signal receiving unit.

[0057] Specifically, for any first detection module 62, when the distance between the first detection module 62 and the wafer edge is different, the time difference between the first detection signal emitted by the first detection signal transmitting unit and the first detection signal received by the first detection signal receiving unit is also different. In practical applications, the transmission path of the first signal acquired by the controller changes with the time difference. Therefore, the controller can determine the transmission path of the first detection signal based on the time difference, so as to generate the first detection information of the wafer based on the transmission path of the first detection signal, thereby realizing wafer damage detection in the process cavity through the first detection device set on the outer side of the cavity wall.

[0058] In some embodiments, the first detection module can move relative to the wafer in the wafer transport path direction during the detection process. The controller is further configured to acquire the transmission path of the first detection signal multiple times during the relative movement. The controller is further configured to generate first detection information based on the multiple acquired transmission paths of the first detection signal. The first detection information is the outer contour information of the wafer.

[0059] Specifically, to achieve wafer breakage detection, each first detection module 62 needs to perform a complete inspection of its corresponding wafer portion. Considering that the wafer cannot rotate after being placed in the wafer transfer position, the movement of the first detection module 62 can be controlled during breakage detection. Since the wafer transfer path direction is from the wafer transfer port to the wafer transfer position, in this embodiment, by setting the first detection module 62 to move relative to the wafer in the wafer transfer path direction during the inspection process, a complete inspection of the wafer portion corresponding to the first detection module 62 can be achieved, thereby ensuring the wafer inspection accuracy and improving the wafer breakage detection accuracy.

[0060] During the movement of the first detection module 62, the controller 61 is also used to acquire the transmission path of the first detection signal multiple times during the relative movement, and generate first detection information based on the multiple acquired transmission paths of the first detection signal. For a single-sided first detection module 62, the detection of the corresponding wafer portion can be achieved from the start of the detection movement to the end of the detection. Therefore, based on the multiple acquired transmission paths of the first detection signals from the first detection modules 62 on both sides, the controller 61 can scan and form the outline of a complete wafer, that is, the first detection information is the outer contour information of the wafer.

[0061] Once the aforementioned first detection information is determined, the controller 61 can determine whether the wafer is damaged based on this information. For a wafer that is not damaged, the transmission path of the first detection signal from the start of detection by one first detection module 62 to the end of detection can be fitted into a semicircle, and the two semicircles fitted by two first detection modules 62 can be combined into a complete circle. Specifically, when the first detection information is a complete circle, it indicates that the wafer is not damaged; conversely, if the transmission paths of the first detection signals from two first detection modules 62 cannot be fitted into a complete circle, it indicates that the wafer is damaged. Therefore, wafer damage detection within the process chamber can be achieved through a first detection device located on the outside of the cavity wall.

[0062] In some embodiments, the process chamber includes at least one sidewall. The sidewall is provided with a wafer transfer port for wafer transfer.

[0063] In some embodiments, the process chamber includes four sidewalls, arranged in pairs opposite to each other. Each pair of opposite sidewalls is provided with an observation window. Two first detection modules are respectively mounted on the outside of the two observation windows on the two sidewalls. In other words, two first detection modules are respectively mounted on the outside of the two observation windows on the two sidewalls. Each first detection module transmits and receives a first detection signal through its corresponding observation window. One of the other pair of opposite sidewalls is provided with a wafer transfer port for wafer transport.

[0064] Specifically, taking a PVD chamber as an example, as shown in Figure 7, the PVD chamber 70 includes four sidewalls: a left sidewall, a right sidewall, a front sidewall, and a rear sidewall (the left, right, front, and rear directions defined here correspond to the left side, right side, the side closer to the observer, and the side farther from the observer in Figure 7, respectively). The left and right sidewalls are arranged opposite each other, and the front and rear sidewalls are arranged opposite each other. Observation windows 71 are provided on the front and rear sidewalls, respectively. The observation windows 71 have a rectangular structure. A wafer transfer port (not shown in Figure 7) is also provided on the left or right sidewall. The wafer 97 enters the PVD chamber 70 through the wafer transfer port.

[0065] In addition, the PVD chamber 70 also includes a support pin 72, a support pin lifting mechanism 73, and a support pin lifting motor 74. The support pin lifting mechanism 73 drives the support pin 72 to move up and down under the action of the support pin lifting motor 74. Its specific structure and working principle can be found in related technologies, and will not be described in detail here.

[0066] As shown in Figure 8, a first detection module 62 is also installed on the outside of each observation window 71 (not shown in Figure 8). A wafer 97 (not shown in Figure 8) is placed on a base 75. In practical applications, each first detection module 62 detects the wafer 97 through its corresponding observation window 71. Specifically, the first detection module 62 transmits and receives a first detection signal through its corresponding observation window 71. Thus, by having two first detection modules 62 simultaneously detect the wafer 97 on both sides of the PVD chamber 70, the detection accuracy of the wafer 97 is improved, thereby improving the defect detection accuracy of the wafer 97. In the embodiment shown in Figure 8, the first detection signal transmitted by the first detection module 62 is transmitted in the first horizontal direction (i.e., the Y direction in the figure); the wafer transmission direction is the X direction, and the first horizontal direction is perpendicular to the wafer transmission direction.

[0067] In some embodiments, each first detection module further includes a first moving mechanism and a second moving mechanism. The first moving mechanism drives the first detection module to move in a first vertical direction (i.e., the Z direction in the figure). The second moving mechanism drives the first detection module to move in a second horizontal direction (i.e., the X direction in the figure). The second horizontal direction is parallel to the wafer transfer direction. Both the first vertical direction and the second horizontal direction are perpendicular to the first horizontal direction, and the first vertical direction is perpendicular to the second horizontal direction. The length of the observation window in the second horizontal direction is not less than the movement range of the second moving mechanism, so that the detection signal emitted by the first detection module is not blocked.

[0068] Specifically, as shown in Figure 9, the first moving mechanism includes a first fixed block 622, a first motor 623, a first coupling 624, and a first guide rail screw 625. The second moving mechanism includes a second fixed block 626, a second motor 627, a second coupling 628, and a second guide rail screw 629. A first detection signal transmitting unit and a first detection signal receiving unit are mounted on the first fixed block 622.

[0069] In some embodiments, the first detection signal transmitting unit and the first detection signal receiving unit are combined into a laser probe 621 and mounted on the first fixing block 622.

[0070] In practical applications, the first motor 623 is connected to the first guide rail screw 625 via the first coupling 624. The first fixing block 622 is mounted on the first guide rail screw 625. The first guide rail screw 625 is also fixed to the second fixing block 626. The second motor 627 is connected to the second guide rail screw 629 via the second coupling 628. The second fixing block 626 is mounted on the second guide rail screw 629. Driven by the sub-mechanism composed of the first motor 623, the first coupling 624, and the first guide rail screw 625, the first fixing block 622 can drive the laser probe 621 to move in the first vertical direction (i.e., up and down, Z direction in the figure). Driven by the sub-mechanism composed of the second motor 627, the second coupling 628, and the second guide rail screw 629, the second fixing block 626 can drive the laser probe 621 to move in the second horizontal direction (i.e., left and right, X direction in the figure).

[0071] It should be noted that the second horizontal direction is used here to distinguish it from the first horizontal direction. In practical applications, the first horizontal direction, the second horizontal direction, and the first vertical direction form a three-dimensional coordinate system. For example, the first horizontal direction can be the Y-axis, the second horizontal direction can be the X-axis, and the first vertical direction can be the Z-axis. Through the first and second moving mechanisms, the first detection module can move in the XZ-axis direction of the observation window, avoiding partial missed detection of the wafer, thus ensuring the detection accuracy of the wafer and improving the wafer damage detection accuracy.

[0072] Specifically, as shown in Figure 10, for the wafer 97 in the PVD chamber, when the wafer transfer position is adjusted, or when the laser probe 621 (i.e., the first detection signal transmitting unit and the first detection signal receiving unit) cannot transmit the first detection signal emitted by the first detection signal transmitting unit to the wafer 97 at the wafer transfer position due to mechanical part installation errors, the laser probe 621 can be moved up and down by controlling the first motor 623 to move up and down, so that the first detection signal can be transmitted to the wafer 97, thereby ensuring the detection accuracy of the wafer.

[0073] As shown in Figure 9, the first motor 623 is connected to the first motor driver 6232 via a corresponding first cable 6231. The second motor 627 is connected to the second motor driver 6272 via a corresponding second cable 6271. In practical applications, both the first motor driver 6232 and the second motor driver 6272 are also communicatively connected to the controller 61 (not shown in Figure 9). The controller 61 controls the drive of the first motor 623 via the first motor driver 6232 and controls the drive of the second motor 627 via the second motor driver 6272, thereby enabling the first detection module to move in the XZ axis direction of the observation window, improving the alignment accuracy between the detection signal and the wafer, and thus improving the wafer breakage detection accuracy.

[0074] In some embodiments, the controller is further configured to control each second moving mechanism to move in a second horizontal direction after the wafer enters the process chamber and before the process is performed; acquire the transmission path of the first detection signal multiple times during the movement; generate first detection information of the wafer based on the multiple acquired transmission paths of the first detection signal; and determine the wafer state based on the first detection information.

[0075] In some embodiments, the controller is further configured to control each second moving mechanism to move in a second horizontal direction after the wafer has been processed and before it leaves the process chamber; acquire the transmission path of the first detection signal multiple times during the movement; generate first detection information of the wafer based on the multiple acquired transmission paths of the first detection signal; and determine the wafer state based on the first detection information.

[0076] Specifically, to prevent contamination of the process chamber during the processing of damaged wafers, after the wafer enters the process chamber but before processing, each second moving mechanism is controlled to move in the second horizontal direction. This allows the first detection module to move relative to the wafer along the wafer transport path during the detection process. The controller generates first detection information for the wafer based on the transmission paths of the multiple acquired first detection signals, and determines whether the wafer is damaged based on this information. This prevents damaged wafers from being processed within the process chamber and thus avoiding contamination.

[0077] Furthermore, if the wafer is not damaged, the first detection device performs a damage detection on the wafer after processing is completed and before it leaves the process chamber. This prevents secondary damage during wafer removal caused by wafer breakage, and avoids excessive particle counts in the chamber due to wafer debris. Therefore, by performing damage detection on the wafer after it enters the process chamber and before processing, and / or after processing and before it leaves the process chamber, the problem of process chamber contamination caused by wafer breakage is avoided, thus ensuring the service life of the semiconductor process equipment.

[0078] It should be noted that the above-described damage detection process can refer to the aforementioned embodiments. Furthermore, before controlling each second moving mechanism to move in the second horizontal direction, the first moving mechanism can also be controlled to move in the first vertical direction as needed. Thus, the first detection signal emitted by the first detection signal transmitting unit can be effectively transmitted to the wafer, avoiding partial missed detection on the wafer, thereby improving the alignment accuracy between the detection signal and the wafer, and consequently improving the wafer damage detection accuracy.

[0079] In some embodiments, the controller is further configured to generate a wafer anomaly result when wafer breakage occurs. The controller is also configured to send the wafer anomaly result. In some embodiments, the wafer anomaly result is a wafer breakage result.

[0080] In some embodiments, the semiconductor process equipment further includes a slave device. The slave device is communicatively connected to the controller. The slave device receives wafer anomaly results sent by the controller and issues an alarm based on the wafer anomaly results.

[0081] In some embodiments, the control system of the semiconductor process equipment receives a wafer anomaly result sent by the controller, and performs equipment control, data acquisition and processing based on the wafer anomaly result.

[0082] In some embodiments, the semiconductor process equipment further includes a host computer. The host computer is communicatively connected to the controller. The host computer receives wafer anomaly results sent by the controller and records them accordingly.

[0083] Specifically, as shown in Figure 11, the two first detection modules on either side of the wafer transmission path are connected to the controller via signal cables. The controller is connected to the lower-level machine via signal cables. In practical applications, the controller acquires the transmission path of the first detection signals from the two first detection modules and generates the first detection information of the wafer; and determines whether the wafer is damaged based on the first detection information. When the wafer is damaged, if the first detection information indicates an incomplete circle, the controller also generates a wafer damage result. Based on this, the controller also sends the wafer damage result, for example, to the lower-level machine. The lower-level machine receives the wafer damage result and issues an alarm based on it, prompting the operator to open the process chamber to confirm the wafer, thus avoiding contamination of the chamber and excessive particle levels caused by the damaged wafer.

[0084] In some embodiments, for the PVD chamber, with the wafer output path as the center, the observation windows on both sides of the output path are respectively called the left observation window and the right observation window. The first detection module at the left observation window is called the left detection module, the first detection signal transmitting unit and the first detection signal receiving unit in the left detection module are called the left laser probe, the first motor is called the left laser probe Y-axis motion motor, the first motor driver is called the left laser probe Y-axis motion motor driver, the second motor is called the left laser probe X-axis motion motor, and the first motor driver is called the left laser probe X-axis motion motor driver. Similarly, the first detection module at the right observation window is called the right detection module, the first detection signal transmitting unit and the first detection signal receiving unit in the right detection module are called the right laser probe, the first motor is called the right laser probe Y-axis motion motor, the first motor driver is called the right laser probe Y-axis motion motor driver, the second motor is called the right laser probe X-axis motion motor, and the first motor driver is called the right laser probe X-axis motion motor driver.

[0085] In addition, as shown in Figure 12, besides the support pin lifting motor 74, the PVD chamber also includes a wafer carrier lifting motor 76, a shielding disk rotation motor 77, and a magnetron rotation motor 78. The support pin lifting motor 74 is connected to a support pin lifting motor driver (not shown in Figure 12). The wafer carrier lifting motor 76 is connected to a wafer carrier lifting motor driver (not shown in Figure 12). The shielding disk rotation motor 77 is connected to a shielding disk rotation motor driver (not shown in Figure 12). The magnetron rotation motor 78 is connected to a magnetron rotation motor driver (not shown in Figure 12). The specific structure of the PVD chamber can be found in related technologies; the embodiments disclosed herein will not be described in detail here.

[0086] In semiconductor process equipment, the lower-level computer can also drive and control various motors. As shown in Figure 13, the lower-level computer controls the motor drivers corresponding to each motor to achieve drive control of various electrical appliances.

[0087] In some embodiments, for the X-axis motion motors of the left and right laser probes, the lower-level computer can pre-configure the axis group settings in the motor PLC (Programmable Logic Controller) and send these settings to the controller, so that the controller can control the X-axis motion motors of the left and right laser probes to move synchronously. It should be noted that the process of the lower-level computer controlling the other motors can be found in related technologies, and will not be described in detail here.

[0088] In summary, after the wafer is transferred to the process chamber and before processing, the lower-level computer first controls the movement of the second motors in the first detection modules on both sides of the process chamber. This causes the first detection modules to move at a constant speed from the wafer transfer port side to the disk garage side in a direction parallel to the rectangular observation window. As the movement time changes, the laser distance signal received by the controller changes with the distance between the first detection module and the wafer. The controller forms a two-dimensional model of the detected pattern (i.e., the first detection information) within the entire scanning range of the first detection module from the start to the end of the detection. For a complete wafer, the transmission paths of the first detection signals from the left and right first detection modules can each be fitted into a semicircle. Since the left and right first detection modules move synchronously, the two fitted semicircles can form a complete circle, as shown in Figure 14.

[0089] However, for a damaged wafer, as shown in Figure 15, the transmission paths of the first detection signals from the left and right first detection modules cannot be fitted into a complete circle. Therefore, the controller generates the first detection information of the wafer based on the transmission paths of the first detection signals from the left and right first detection modules, and determines whether the wafer is damaged based on the first detection information. When the wafer is damaged, the controller sends the wafer damage result to the lower-level machine. The lower-level machine issues an alarm, prompting the operator that the coating process cannot be performed, thus avoiding the problem of sputtering a film layer onto the chamber substrate and causing chamber contamination if the damaged wafer is subjected to the coating process.

[0090] After the wafer completes its process and is lowered from the process position to the transfer position, but before it leaves the process chamber, the left and right first detection modules move at a constant speed from the Disk garage towards the transfer port in a direction parallel to the rectangular observation window. Similar to the detection method used by the first detection modules when moving from the transfer port to the Disk garage, the wafer condition detection system completes the detection of the wafer's integrity or damage condition; this will not be described in detail in the embodiments disclosed herein.

[0091] It should be noted that the aforementioned disk garage can also be called a shielded disk garage or shielded disk storage, and the specific details can be found in the process chambers of related technologies. The embodiments disclosed herein will not be described in detail here.

[0092] In practical applications, the working principle of the wafer status detection system is shown in Figure 16, specifically as follows: (1) Before the process processing, the wafer is in the wafer transfer position; at this time, the wafer is in the wafer transfer position of the process chamber, and before the process processing is carried out; (2) The controller obtains the transmission path of the first detection signal of the two first detection modules to generate the first detection information of the wafer, and judges whether the wafer is damaged according to the first detection information; if it is judged that the wafer is damaged, the lower-level machine will alarm; if it is judged that the wafer is not damaged, it means that the wafer is a complete wafer, and the lower-level machine will alarm. (3) After the wafer is processed, it returns to the transfer position. At this time, the wafer has not yet been transferred out of the process chamber. (4) The controller obtains the transmission path of the first detection signal of the two first detection modules to generate the first detection information of the wafer, and judges whether the wafer is damaged according to the first detection information. If the wafer is judged to be damaged, the lower computer will issue an alarm. If the wafer is judged not to be damaged, it means that the wafer is a complete wafer, and the lower computer controls the vacuum robot to take the wafer out of the process chamber.

[0093] Therefore, for each process chamber, the first detection device installed on the outside of the chamber wall can not only detect wafer damage after entering the process chamber and before processing, thus preventing damaged wafers from being coated and causing the chamber substrate to be sputtered with a film layer, resulting in chamber contamination; it can also detect wafers after processing and before leaving the process chamber, thus preventing wafer damage after processing and direct wafer removal, which would lead to secondary wafer damage and wafer debris causing excessive particle size in the chamber.

[0094] Furthermore, in addition to detecting wafer breakage, the aforementioned wafer condition inspection system can also detect wafer detachment and warping within the process chamber. In other words, the wafer condition can also include detachment and warping.

[0095] In some embodiments, when the first detection information generated by the controller based on the transmission path of the first detection signals of the two first detection modules is elliptical, as shown in FIG17, it is determined that the wafer has warped in the process chamber.

[0096] In some embodiments, when the first detection information generated by the controller based on the transmission path of the first detection signals of the two first detection modules is a straight line, as shown in FIG18, it is determined that the wafer has dropped in the process chamber.

[0097] The wafer drop condition can include a partial drop where a portion of the wafer has fallen into the chamber while the remaining portion remains on the support pins. Wafers in the partial drop condition are tilted, with their tilted surface aligned with the X-axis of the motor; therefore, the fitted graph is a straight line. Furthermore, the tilted surface of a partially dropped wafer can also be detected along the wafer transfer port direction of the process chamber; in this case, the scan results in a very short straight line.

[0098] Furthermore, the wafer drop state can also include a complete wafer drop state where the wafer has completely fallen into the process chamber. In this case, the wafer status detection system controller cannot fit a pattern based on the transmission paths of the first detection signals from the two first detection modules, thus preventing the wafer status detection system from detecting the complete wafer drop state. Specifically, the controller cannot generate the first detection information.

[0099] Therefore, the first detection information generated by the controller based on the transmission path of the first detection signals from the two first detection modules can not only realize wafer damage detection, but also realize the detection of other abnormal states of the wafer in the process chamber, thereby ensuring the safe processing of the wafer in the process chamber.

[0100] In some embodiments, the system further includes a second detection device. The second detection device includes at least one second detection module communicatively connected to the controller. The second detection module includes a second detection signal transmitting unit and a second detection signal receiving unit. The second detection signal transmitting unit is disposed above the wafer transfer port. The second detection signal receiving unit is disposed below the wafer transfer port. The second detection signal transmitting unit and the second detection signal receiving unit are disposed opposite to each other. The second detection signal transmitting unit is used to transmit a second detection signal. The second detection signal receiving unit is used to receive the second detection signal. The second detection signal is a parallel light signal of fixed width, and the parallel light signal at least covers the wafer transfer path. The controller is further configured to, when the wafer enters the process chamber through the wafer transfer port, generate second detection information for the wafer based on the strength of the second detection signal received by the second detection signal receiving unit, and determine the wafer state based on the second detection information. The wafer state determined based on the second detection information includes a normal state and a damaged state, used to determine whether the wafer is damaged.

[0101] Specifically, as shown in Figure 19, the second detection device 20 includes multiple second detection modules. Each second detection module is located at the wafer transfer port of the process chamber, and all multiple second detection modules are communicatively connected to the controller 61.

[0102] In some embodiments, the second detection module is an ultra-high-speed, high-precision CCD (Charge Coupled Device) measurement probe, and multiple second detection modules (such as CCD measurement probe 1 to CCD measurement probe 8) are communicatively connected to the controller 61. In some embodiments, the controller 61 is a high-performance controller that can connect to a corresponding number of CCD measurement probes, such as eight CCD measurement probes, which are independent of each other and do not interfere with each other.

[0103] In some embodiments, the controller 61 is connected to the vacuum manipulator 92 via a communication cable.

[0104] In practical applications, the number of second detection modules is consistent with the number of process chambers. For ease of explanation, a single second detection module is used as an example. As shown in Figure 20, the second detection module includes a second detection signal transmitting unit 21 positioned above the wafer transfer port 99 for transmitting the second detection signal 26, and a second detection signal receiving unit 22 positioned below the wafer transfer port 99 for receiving the second detection signal 26.

[0105] In practical applications, the second detection signal transmitting unit 21 is fixed to the inner side of the platform above the transfer port 99 via the transmitter mounting plate 23. The second detection signal receiving unit 22 is fixed to the inner side of the platform below the transfer port 99 via the receiver mounting plate 24. The second detection signal transmitting unit 21 and the second detection signal receiving unit 22 are connected by a cable 25. The cable of the second detection signal transmitting unit 21 extends to the top of the platform. The cable of the second detection signal receiving unit 22 extends to the bottom of the platform. Furthermore, the second detection signal receiving unit 22 is connected to a channel of a high-performance controller 61 via a signal cable. The controller 61 is located below the vacuum platform 91 and is used to process the real-time signals from the second detection signal transmitting unit 21 and the second detection signal receiving unit 22.

[0106] Furthermore, as shown in Figure 21, the second detection signal transmitting unit 21 emits a second detection signal 26. The second detection signal 26 is a parallel light signal of fixed width, which at least covers the wafer transmission path. The second detection signal 26 is perpendicular to the transmission path of the wafer 97. Therefore, the controller 61 is used to obtain the duration for which the second detection signal is blocked by the wafer based on the strength of the second detection signal received by the second detection signal receiving unit 22 when the wafer is transferred into the process chamber through the wafer transfer port, thereby generating two-dimensional image information of the wafer (i.e., second detection information), and determining whether the wafer is damaged based on the second detection information.

[0107] Specifically, during the process of the vacuum robot 92 transferring the wafer to the process chamber, when the vacuum robot 92 carrying the wafer 97 moves at a constant speed from the vacuum platform to the process chamber along a direction perpendicular to the transfer port 99, the wafer 97 is perpendicular to the second detection signal during the movement, and will pass through the perpendicular second detection signal at a fixed position at a constant speed as the vacuum robot 92 moves. When the wafer passes through the transmission path of the second detection signal, the second detection signal is blocked by the wafer, so the second detection signal receiving unit stops receiving the second detection signal or the received second detection signal becomes weaker. Therefore, the controller determines the duration of the second detection signal being blocked by the wafer based on the strength of the second detection signal received by the second detection signal receiving unit.

[0108] However, when the wafer passes through the vertical second detection signal, the time it takes for a intact wafer and a damaged wafer to block the vertical second detection signal are not the same. During transmission, the wafer moves at a constant speed through the vertically positioned second detection signal. As the transmission time changes, the laser intensity signal received by the controller will vary due to the obstruction of the vertical second detection signal by the intact wafer and the damaged wafer.

[0109] Therefore, the controller 61 is also used to compare the second detection information with pre-stored complete wafer data to determine whether the wafer is damaged. Specifically, the controller 61 also pre-stores wafer target data. Wafer target data can also be understood as complete wafer data. In some embodiments, wafer target data can be the size data of a complete wafer. As shown in FIG22, in some embodiments, wafer target data may include, but is not limited to, the wafer size r and the Notch port size, etc. After generating the second detection information, the controller 61 also analyzes and compares the second detection information (i.e., the detected wafer two-dimensional image information) with the wafer target data (i.e., complete wafer data) to obtain the damage detection result of the transferred wafer. Thus, the controller 61 realizes the damage detection of the wafer before it enters the process chamber through the wafer transfer port through the second detection module, avoiding the entry of damaged wafers into the process chamber.

[0110] In some embodiments, the semiconductor process equipment further includes a vacuum robot. The vacuum robot is communicatively connected to a controller. The controller is also configured to stop the vacuum robot from transferring the wafer when wafer breakage occurs.

[0111] In some embodiments, the controller is also used to control the vacuum robot to transfer the wafer into the process chamber via the transfer port. Specifically, as shown in FIG4, the semiconductor process equipment also includes a vacuum transfer platform. The vacuum transfer platform includes a vacuum robot 92 for transferring the wafer into or out of the process chamber. In practical applications, the controller 61 controls the vacuum robot 92 to transfer the wafer 97 into the process chamber via the transfer port 99. During this process, the controller 61 generates second detection information based on the strength of the second detection signal received by the second detection signal receiving unit. The controller 61 also analyzes and compares the second detection information with the wafer target data to obtain the wafer breakage detection result. If the breakage detection result indicates that the wafer is broken, the controller 61 controls the vacuum robot 92 to stop transferring the wafer and sends the wafer breakage result to the lower-level machine. The lower-level machine issues an alarm, prompting the operator to confirm and handle the abnormal operating condition. If the breakage detection result indicates that the wafer is not broken, the controller 61 controls the vacuum robot 92 to continue transferring the wafer to the transfer position in the process chamber. Therefore, the second detection device can perform damage detection on the wafer before it enters the process chamber, thus preventing damaged wafers from entering the process chamber and causing chamber contamination.

[0112] Therefore, for the second detection device, the working principle of the wafer status detection system is shown in Figure 23, specifically as follows: (1) The vacuum robot starts to transfer the wafer; (2) The controller generates second detection information based on the strength of the second detection signal received by the second detection signal receiving unit, and judges whether the wafer is damaged based on the second detection information and the wafer target data. If so, the lower-level machine will issue an alarm; if not, the vacuum robot will transfer the wafer to the process chamber.

[0113] In summary, the wafer condition inspection system provided in this embodiment adds a second inspection device to the wafer transfer port of the vacuum platform for semiconductor process equipment, and installs a first inspection device on the outer wall of each process chamber. When a wafer is transferred from the vacuum platform to the process chamber by a vacuum robot, the second inspection device detects wafer damage. When wafer damage is detected, the vacuum robot stops transferring the wafer, and the semiconductor process equipment issues an alarm to remind the operator to check and handle the abnormal condition. Furthermore, the first inspection device performs damage detection on the wafers in the process chamber before and / or after processing. When wafer damage is detected before or after processing, the semiconductor process equipment issues an alarm to remind the operator to open the process chamber and manually check the wafer condition. Therefore, the wafer condition detection system provided in this embodiment can not only prevent damaged wafers from entering the process chamber for processing, resulting in the sputtering of a film layer onto the chamber substrate and contamination of the chamber, but also prevent wafers from being damaged after processing in the process chamber, resulting in secondary damage to the wafers during wafer removal and wafer debris causing excessive particle size in the chamber, requiring cleaning.

[0114] It should be noted that, in some embodiments of the wafer condition inspection system, the first inspection device and the second inspection device can be controlled by a single controller.

[0115] In other embodiments, the first detection device and the second detection device may each be equipped with a corresponding controller. For example, the controller that controls the operation of the first detection device is called the first controller, and the controller that controls the operation of the second detection device is called the second controller. Both the first controller and the second controller are also communicatively connected to a lower-level machine, etc., and the specifics can be adapted according to the actual situation.

[0116] Furthermore, this disclosure also provides a semiconductor process apparatus, including at least one process chamber and the aforementioned wafer condition detection system. The semiconductor process apparatus provided in this disclosure has the same technical features as the wafer condition detection system provided in the above embodiments, and therefore can solve the same technical problems and achieve the same technical effects.

[0117] Those skilled in the art will understand that, for the sake of convenience and brevity, the specific working process of the device described above can be referred to the corresponding process in the foregoing system embodiments, and will not be repeated here.

[0118] Furthermore, in the description of the embodiments of this disclosure, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this disclosure based on the specific circumstances.

[0119] If the aforementioned functions are implemented as software functional units and sold or used as independent products, they can be stored in a processor-executable, non-volatile, computer-readable storage medium. Based on this understanding, the technical solution of this disclosure, in essence, or the part that contributes to related technologies, or a portion of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this disclosure. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0120] In the description of this disclosure, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this disclosure. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0121] Finally, it should be noted that the above-described embodiments are merely specific implementations of this disclosure, used to illustrate the technical solutions of this disclosure, and not to limit it. The protection scope of this disclosure is not limited thereto. Although this disclosure has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that any person skilled in the art can still modify or easily conceive of changes to the technical solutions described in the foregoing embodiments, or make equivalent substitutions for some of the technical features, within the scope of the technology disclosed in this disclosure. Such modifications, changes, or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this disclosure, and should all be covered within the protection scope of this disclosure. Therefore, the protection scope of this disclosure should be determined by the protection scope of the claims.

Claims

1. A wafer condition inspection system, applied to semiconductor process equipment, said semiconductor process equipment including at least one process chamber; wherein, The wafer condition detection system includes: Controller; and At least one first detection device; wherein the first detection device includes two first detection modules communicatively connected to the controller; the two first detection modules are respectively disposed on the outer side of the cavity wall of the process chamber; Each of the first detection modules includes a first detection signal transmitting unit and a first detection signal receiving unit. The first detection signal transmitting unit is used to transmit a first detection signal in a first horizontal direction, and the first detection signal receiving unit is used to receive the first detection signal. Wherein, the first horizontal direction is perpendicular to the wafer transmission direction, and the transmission path of the first detection signal intersects with the wafer transmission path. The transmission path of the first detection signal is the transmission path from the first detection signal transmitting unit to the wafer edge and from the wafer edge to the first detection signal receiving unit. The controller is configured to generate first detection information of the wafer based on the transmission path of the first detection signal, and determine the wafer state of the wafer based on the first detection information.

2. The wafer condition detection system according to claim 1, wherein, The two first detection modules are symmetrically arranged on both sides of the wafer transmission path, and the transmission path of the first detection signal is orthogonal to the wafer transmission path.

3. The wafer condition detection system according to claim 1 or 2, wherein, The controller is further configured to determine the transmission path of the first detection signal based on the time difference between the first detection signal emitted by the first detection signal transmitting unit and the first detection signal received by the first detection signal receiving unit.

4. The wafer condition detection system according to claim 3, wherein, During the detection process, the first detection module can move relative to the wafer in the direction of the wafer transport path; The controller is further configured to acquire the transmission path of the first detection signal multiple times during the relative motion, and generate the first detection information based on the multiple acquired transmission paths of the first detection signal. The first detection information is the outer contour information of the wafer.

5. The wafer condition detection system according to any one of claims 1 to 4, wherein, The process chamber includes: At least one sidewall, the sidewall being provided with a wafer transfer port for wafer transfer.

6. The wafer condition inspection system according to any one of claims 1 to 4, wherein, The process chamber includes: Four side walls, which are arranged in pairs opposite to each other; Among them, one pair of oppositely arranged sidewalls of the four sidewalls are respectively provided with observation windows, and one of the other pair of oppositely arranged sidewalls of the process chamber is provided with a wafer transfer port for wafer transfer. The two first detection modules are respectively installed on the outside of the two observation windows, and transmit and receive the first detection signals through the observation windows.

7. The wafer condition detection system according to claim 6, wherein, Each of the first detection modules further includes: A first moving mechanism, the first moving mechanism being used to drive the first detection module to move in a first vertical direction; and The second moving mechanism is used to drive the first detection module to move in the second horizontal direction; Wherein, the second horizontal direction is parallel to the wafer transport direction, the first vertical direction and the second horizontal direction are both perpendicular to the first horizontal direction, and the first vertical direction is perpendicular to the second horizontal direction; Wherein, the length of the observation window in the second horizontal direction is not less than the movement range of the second moving mechanism.

8. The wafer condition detection system according to claim 7, wherein, The first moving mechanism includes: The first fixed block, the first detection signal transmitting unit and the first detection signal receiving unit are mounted on the first fixed block; The first guide rail screw, and the first fixing block is mounted on the first guide rail screw; First motor; and The first coupling connects the first motor to the first guide rail screw. The second moving mechanism includes: The second fixing block, the first guide rail screw is also fixed on the second fixing block; The second guide rail screw, and the second fixing block is mounted on the second guide rail screw; Second motor; and The second coupling connects the second motor to the second guide rail screw.

9. The wafer condition detection system according to claim 7 or 8, wherein, The controller is further configured to control each of the second moving mechanisms to move in the second horizontal direction after the wafer enters the process chamber and before the process is performed, and to acquire the transmission path of the first detection signal multiple times during the movement, and to generate the first detection information of the wafer based on the multiple acquired transmission paths of the first detection signal, and to determine the wafer state based on the first detection information.

10. The wafer condition detection system according to any one of claims 7 to 9, wherein, The controller is further configured to control each of the second moving mechanisms to move in the second horizontal direction after the wafer has been processed and before it leaves the process chamber, and to acquire the transmission path of the first detection signal multiple times during the movement, and to generate the first detection information of the wafer based on the multiple acquired transmission paths of the first detection signal, and to determine the wafer state based on the first detection information.

11. The wafer condition inspection system according to any one of claims 1 to 10, wherein, The controller is further configured to generate a wafer anomaly result when the wafer experiences an anomaly; and the controller is further configured to send the wafer anomaly result.

12. The wafer condition detection system according to claim 11, wherein, The semiconductor process equipment also includes: The lower-level machine is communicatively connected to the controller. The lower-level machine receives the abnormal result of the wafer and issues an alarm based on the abnormal result of the wafer.

13. The wafer condition inspection system according to any one of claims 5 to 10, wherein, The wafer condition detection system also includes: The second detection device includes at least one second detection module that is communicatively connected to the controller. The second detection module includes a second detection signal transmitting unit and a second detection signal receiving unit. The second detection signal transmitting unit is disposed above the wafer transfer port, and the second detection signal receiving unit is disposed below the wafer transfer port. The second detection signal transmitting unit and the second detection signal receiving unit are disposed opposite to each other. The second detection signal transmitting unit is used to transmit a second detection signal, and the second detection signal receiving unit is used to receive the second detection signal. The second detection signal is a parallel light signal of fixed width, and the parallel light signal at least covers the wafer transmission path. The controller is further configured to, when the wafer is transferred into the process chamber through the wafer transfer port, generate second detection information of the wafer based on the strength of the second detection signal received by the second detection signal receiving unit, and determine the wafer status of the wafer based on the second detection information.

14. The wafer condition detection system according to claim 13, wherein, The second detection information is a two-dimensional image of the wafer; The controller is also used to compare the second detection information with pre-stored complete wafer data to determine the wafer state.

15. The wafer condition detection system according to claim 13 or 14, wherein, The semiconductor process equipment also includes a vacuum robot, which is communicatively connected to the controller. The controller is also used to control the vacuum robot to transfer the wafer into the process chamber through the wafer transfer port; The controller is also used to control the vacuum robot to stop transferring the wafer when the wafer is damaged.

16. The wafer condition inspection system according to any one of claims 13 to 15, wherein, The wafer state determined based on the second detection information includes a normal state and a damaged state, which is used to determine whether the wafer is damaged.

17. The wafer condition inspection system according to any one of claims 1 to 16, wherein, The wafer state determined based on the first detection information includes a normal state and a damaged state, which is used to determine whether the wafer is damaged.

18. The wafer condition inspection system according to any one of claims 1 to 17, wherein, The wafer state determined based on the first detection information also includes a wafer drop status, used to determine whether the wafer has dropped.

19. The wafer condition inspection system according to any one of claims 1 to 18, wherein, The wafer state determined based on the first detection information also includes warpage state, used to determine whether the wafer has warped.

20. A semiconductor process apparatus, wherein, It includes at least one process chamber and the wafer condition detection system according to any one of claims 1 to 19.

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