Temperature control method and system for semiconductor chamber heater, and storage medium

Abstract

A temperature control method and system for a semiconductor chamber heater, and a storage medium. A heater (120) comprises a heating resistor (121), wherein the heating resistor (121) is electrically connected to a standard sampling module (130) configured with a standard measurement channel, and the standard measurement channel is provided with a plurality of voltage gain ranges. A candidate voltage calibration coefficient corresponding to a candidate voltage gain range is used to calculate an accurate measured voltage value of the heating resistor (121), a current calibration coefficient corresponding to a candidate current code value is used to calculate an accurate measured current value of the heating resistor (121), and an accurate reference resistance value of the heating resistor is calculated on the basis of the measured voltage value and the measured current value. Thus, an accurate reference temperature value of the heating resistor (121) can be obtained on the basis of the reference resistance value, and the heating power of the heating resistor (121) can thus be accurately regulated, thereby improving the accuracy and stability of temperature measurement for heating resistors, and realizing accurate temperature control of the heating resistors.

Description

A method, system, and storage medium for temperature control of a semiconductor chamber heater.

[0001] Cross-reference to related applications

[0002] This application claims priority to Chinese application filed on December 29, 2025, with patent application number 202512005324.5, entitled "A Temperature Control Method, System and Storage Medium for a Semiconductor Chamber Heater", the entire contents of which are incorporated herein by reference. Technical Field

[0003] This application relates to the field of temperature control technology, and in particular to a temperature control method, system, and storage medium for a semiconductor chamber heater. Background Technology

[0004] In the semiconductor field, temperature monitoring and control of semiconductor chamber heaters typically employs an ADC (Analog-to-Digital Converter)-based acquisition system to acquire voltage and current signals at the heating wire load. Because the heating wire has a positive temperature coefficient, its resistance can be calculated based on the measured voltage and current values, indirectly revealing the heating wire's temperature and enabling precise control of the heating process.

[0005] In related technologies, traditional single-gain ADC acquisition architectures are difficult to meet the accuracy requirements of different ranges in wide-range signal measurement. Due to the limitation of ADC resolution, the ADC output cannot effectively reflect the small changes of actual physical quantities (such as current and voltage), resulting in large fluctuations and inaccurate calculation of heating wire resistance values, which reduces the stability and accuracy of temperature measurement and is not conducive to achieving precise temperature control. Summary of the Invention

[0006] In view of this, one objective of the embodiments of this application is to provide a temperature control method, system and storage medium for a semiconductor chamber heater, so as to solve the technical problem of reduced temperature measurement stability and accuracy caused by the resolution limitation of analog-to-digital converters in the related art.

[0007] In a first aspect, embodiments of this application provide a temperature control method for a semiconductor chamber heater. The heater includes a heating resistor, which is electrically connected to a standard sampling module configured with a standard measurement channel. The standard measurement channel has multiple voltage gain ranges. The method includes: acquiring candidate voltage code values ​​and candidate current code values ​​of the heating resistor. The candidate voltage code value is obtained by the standard sampling module sampling the voltage of the heating resistor through the standard measurement channel at the candidate voltage gain range. The candidate current code value is obtained by the standard sampling module sampling the current of the heating resistor through the standard measurement channel. The candidate voltage gain range is any one of the multiple voltage gain ranges. Each voltage gain range corresponds to a voltage calibration coefficient. The voltage measurement value of the heating resistor is calculated based on the candidate voltage code value and the candidate voltage calibration coefficient corresponding to the candidate voltage gain range. The current measurement value of the heating resistor is calculated based on the candidate current code value and current calibration data; the current calibration data characterizes the current calibration coefficient corresponding to the candidate current code value. The voltage measurement value is divided by the current measurement value to obtain the reference resistance value of the heating resistor. Based on the reference resistance value and the temperature resistance curve of the heating resistor, the reference temperature value of the heating resistor is obtained; the temperature resistance curve characterizes the relationship between the resistance and temperature of the heating resistor. The heating power of the heating resistor is adjusted based on the reference temperature value.

[0008] Secondly, embodiments of this application provide a temperature control system, including a controller, a heater, and a standard sampling module. The heater includes a heating resistor. The controller is communicatively connected to the standard sampling module, and the standard sampling module is electrically connected to the heating resistor. The standard sampling module is configured with a standard measurement channel and a reference measurement channel. Both the standard measurement channel and the reference measurement channel are provided with multiple voltage gain ranges. The reference measurement channel is a measurement channel configured with measurement components whose measurement accuracy meets preset accuracy conditions and whose measurement values ​​meet preset stability conditions. The controller includes a processor and a memory communicatively connected to the processor. The memory stores computer program instructions executable by the processor. When the computer program instructions are executed by the processor, the controller performs any of the temperature control methods for semiconductor chamber heaters proposed in the first aspect.

[0009] Thirdly, embodiments of this application provide a computer-readable storage medium storing processor-executable computer program instructions, which, when executed by a processor, cause the computer to perform any of the temperature control methods for a semiconductor chamber heater proposed in the first aspect.

[0010] The embodiments of this application have the following beneficial effects: Unlike related technologies, the temperature control method for a semiconductor chamber heater provided in this application includes a heating resistor, which is electrically connected to a standard sampling module equipped with a standard measurement channel. The standard measurement channel has multiple voltage gain ranges. This application utilizes candidate voltage calibration coefficients corresponding to candidate voltage gain ranges to calibrate and calculate the precise voltage measurement value of the heating resistor, and utilizes current calibration coefficients corresponding to candidate current code values ​​to calibrate and calculate the precise current measurement value of the heating resistor. Thus, based on the voltage and current measurement values, a precise reference resistance value for the heating resistor is calculated. This allows for the precise acquisition of a precise reference temperature value for the heating resistor based on the reference resistance value, enabling accurate adjustment of the heating resistor's heating power. This improves the accuracy and stability of the heating resistor's temperature measurement, achieving precise temperature control of the heating resistor. Attached Figure Description

[0011] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the prior art or embodiments will be briefly introduced below. Obviously, the drawings described below only show some embodiments of this application and should not be considered as limiting the scope of protection. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0012] Figure 1a is a schematic diagram of the application scenario of the temperature control method of the semiconductor chamber heater in some embodiments of this application;

[0013] Figure 1b is a schematic diagram of the structure of a temperature control system provided in some embodiments of this application;

[0014] Figure 1c is a schematic diagram of the temperature control system provided in some other embodiments of this application;

[0015] Figure 1d is a schematic diagram of the structure of a standard sampling module in some embodiments of this application;

[0016] Figure 1e is a schematic diagram of the connection between the standard sampling module and the heating resistor in some embodiments of this application;

[0017] Figure 2a is a schematic diagram of the voltage sampling circuit in some embodiments of this application;

[0018] Figure 2b is a schematic diagram of the controller in a temperature control system provided in some embodiments of this application;

[0019] Figure 3 is a schematic flowchart of a temperature control method for a semiconductor chamber heater provided in some embodiments of this application;

[0020] Figure 4 is a schematic diagram of the temperature resistance curve of the heating resistor in some embodiments of this application. Embodiments of the present invention

[0021] To make the objectives and advantages of the embodiments of this application more readily understood, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. The detailed description of the embodiments of this application in the accompanying drawings is not intended to limit the scope of protection claimed by this application, but only represents selected embodiments of this application. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0022] It should be noted that, unless there is a conflict, the various technical features involved in the embodiments of this application described below can be combined with each other, and all are within the protection scope of this application. Furthermore, although functional modules are divided in the device or structural schematic diagram and a logical order is shown in the flowchart, in some cases, the steps shown or described may be performed in a different order than the module division in the device or the order in the flowchart. In addition, the terms "first," "second," "third," and other similar expressions used herein do not limit the data or execution order, but are only for illustrative purposes and to distinguish identical or similar items with substantially the same function and effect, and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features.

[0023] Unless otherwise defined, the technical and scientific terms used in this specification have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to limit the scope of this application. It should be understood that the term "and / or" as used in this specification includes any and all combinations of one or more of the listed items.

[0024] In the semiconductor field, temperature monitoring and control of semiconductor chamber heaters typically employs an ADC (Analog-to-Digital Converter)-based acquisition system to acquire voltage and current signals at the heating wire load. Because the heating wire has a positive temperature coefficient, its resistance can be calculated based on the measured voltage and current values, indirectly revealing the heating wire's temperature and enabling precise control of the heating process.

[0025] In related technologies, traditional single-gain ADC acquisition architectures are difficult to meet the accuracy requirements of different ranges in wide-range signal measurement. Due to the limitation of ADC resolution, the ADC output cannot effectively reflect the small changes of actual physical quantities (such as current and voltage), resulting in large fluctuations and inaccurate calculation of heating wire resistance values, which reduces the stability and accuracy of temperature measurement and is not conducive to achieving precise temperature control.

[0026] In view of this, embodiments of this application provide a temperature control method for a semiconductor chamber heater. By calibrating and calculating the precise voltage measurement value of the heating resistor using the candidate voltage calibration coefficient corresponding to the candidate voltage gain range, and calibrating and calculating the precise current measurement value of the heating resistor using the current calibration coefficient corresponding to the candidate current code value, a precise reference resistance value of the heating resistor can be calculated based on the voltage and current measurement values. This allows for the precise acquisition of a precise reference temperature value of the heating resistor based on the reference resistance value, enabling precise adjustment of the heating power of the heating resistor. This improves the accuracy and stability of the heating resistor temperature measurement and achieves precise temperature control of the heating resistor.

[0027] Understandably, heaters are crucial components of semiconductor thin film deposition equipment. Used within semiconductor process chambers, heaters directly contact the wafers to be processed, providing a stable and uniform process temperature and enabling high-precision reactions on the wafer surface to form thin films, ensuring consistency across different areas of the wafer. Ceramic heaters remain the mainstream choice for high-end semiconductor equipment. The temperature control method for semiconductor chamber heaters provided in this application can be applied to thin film deposition equipment, etching equipment, ion implantation equipment, and other processes in semiconductor process equipment. It is particularly suitable for processes that support and heat the wafer, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), and atomic layer deposition (ALD), which require heating reactions. This method ensures the purity, thickness uniformity, crystal quality, and interfacial bonding performance of the thin film.

[0028] Please refer to Figure 1a, which schematically illustrates an application scenario of the temperature control method for a semiconductor chamber heater provided in some embodiments of this application.

[0029] Referring to Figure 1a, a first temperature control system 10 and a second temperature control system 20 are provided within the semiconductor chamber 1000. The first heating resistor 14 of the first temperature control system 10 and the second heating resistor 24 of the second temperature control system 20 are respectively disposed on the inner and outer rings of the wafer 101. The first heating resistor 14 and the second heating resistor 24 form two heating regions, providing a stable and uniform process temperature for the wafer 101, enabling the wafer 101 to perform high-precision reactions and form thin films. It should be understood that the semiconductor chamber 1000 also includes other components, devices, or equipment required for the thin film deposition process on the wafer 101. Engineers can equip the wafer with the necessary components, devices, or equipment according to actual needs.

[0030] In this embodiment, the first temperature control system 10 includes a first controller 11, a first power supply 12, a first standard sampling module 13, and a first heater (not shown in the figure). The first heater includes a first heating resistor 14. The first controller 11 is communicatively connected to the first power supply 12 and the first standard sampling module 13, and both the first power supply 12 and the first standard sampling module 13 are electrically connected to the first heating resistor 14. The first power supply 12 is configured to be controlled by the first controller 11 to provide stable, controllable, and adjustable power to the first heating resistor 14. The first standard sampling module 13 is configured to detect and collect the voltage and current of the first heating resistor 14 and transmit the voltage and current of the first heating resistor 14 to the first controller 11. The first heating resistor 14 is bonded to the wafer 101 and forms a circuit with the first power supply 12 and the first standard sampling module 13. When power is applied, it generates heat, thereby providing a stable and uniform process temperature for the wafer 101. The first heating resistor 14 is a resistor with a positive temperature coefficient, meaning that the higher the temperature of the first heating resistor 14, the greater its resistance, and the lower the temperature of the first heating resistor 14, the smaller its resistance. The first heating resistor 14 can be attached to the wafer 101 in any suitable form, such as a coil, a surface mount, etc.

[0031] The first controller 11 is configured to adjust the operating mode of the first power supply 12, such as constant power and constant voltage, to regulate the output power of the first power supply 12, and is also configured to calculate the resistance value of the first heating resistor 14 and the power value of the first power supply 12 based on the voltage and current of the first heating resistor 14, thereby determining the temperature of the first heating resistor 14 based on the resistance value of the first heating resistor 14.

[0032] In this embodiment, the second temperature control system 20 includes a second controller 21, a second power supply 22, a second standard sampling module 23, and a second heater (not shown in the figure). The second heater includes a second heating resistor 24. The second controller 21 is communicatively connected to the second power supply 22 and the second standard sampling module 23, and both the second power supply 22 and the second standard sampling module 23 are electrically connected to the second heating resistor 24. The second power supply 22 is configured to be controlled by the second controller 21 to provide stable, controllable, and adjustable power to the second heating resistor 24. The second standard sampling module 23 is configured to detect and collect the voltage and current of the second heating resistor 24 and transmit the voltage and current of the second heating resistor 24 to the second controller 21. The second heating resistor 24 is bonded to the wafer 101 and forms a circuit with the second power supply 22 and the second standard sampling module 23. When power is applied, it generates heat, thereby providing a stable and uniform process temperature for the wafer 101. The second heating resistor 24 is a resistor with a positive temperature coefficient, meaning that the higher the temperature of the second heating resistor 24, the greater its resistance, and the lower the temperature of the second heating resistor 24, the smaller its resistance. The second heating resistor 24 can be attached to the wafer 101 in any suitable form, such as a coil, a surface mount, etc.

[0033] The second controller 21 is configured to adjust the operating mode of the second power supply 22, such as constant power and constant voltage, to regulate the output power of the second power supply 22, and is also configured to calculate the resistance value of the second heating resistor 24 and the power value of the second power supply 22 based on the voltage and current of the second heating resistor 24, thereby determining the temperature of the second heating resistor 24 based on the resistance value of the second heating resistor 24.

[0034] It is understood that the process of applying the temperature control method provided in the embodiments of this application to control the temperature of the first heater and the second heater is the same. The following is a brief description of the temperature control method provided in the embodiments of this application, taking the temperature control of the first heater as an example.

[0035] The general process of using the temperature control method provided in the embodiments of this application to control the temperature of the first heater is as follows.

[0036] First, the first controller 11 acquires the candidate current code value obtained by the first standard sampling module 13 through the standard measurement channel to sample the current of the first heating resistor 14, and acquires the candidate voltage code value obtained by the first standard sampling module 13 through the standard measurement channel to sample the voltage of the first heating resistor 14 under the candidate voltage gain range. The candidate voltage gain range is any one of the multiple voltage gain ranges of the standard measurement channel of the first standard sampling module 13, and each voltage gain range corresponds to a voltage calibration coefficient.

[0037] Next, the voltage measurement value of the first heating resistor 14 is calculated based on the candidate voltage code value and the candidate voltage calibration coefficient corresponding to the candidate voltage gain range. The current measurement value of the first heating resistor 14 is calculated based on the candidate current code value and the current calibration data. Here, the current calibration data represents the current calibration coefficient corresponding to the candidate current code value.

[0038] Next, the voltage measurement value is divided by the current measurement value to obtain the reference resistance value of the first heating resistor 14. Based on the reference resistance value and the temperature resistance curve of the first heating resistor 14, the reference temperature value of the first heating resistor 14 is determined. The temperature resistance curve is used to characterize the correspondence between the resistance value and temperature of the first heating resistor 14.

[0039] Finally, based on the reference temperature value, the heating power of the first heating resistor 14 is adjusted so that the first heating resistor 14 provides a suitable, stable and uniform process temperature to the wafer 101, thereby enabling the wafer 101 to perform high-precision reactions and generate thin films.

[0040] It should be understood that the application scenario shown in Figure 1a is merely an illustrative representation of one situation in which the temperature control method for the semiconductor chamber heater provided in this application is used to control the temperature of the first heater and the second heater. It does not impose any limitations on the structure, type, or quantity of the heater, power supply, and heating resistor in other application scenarios or embodiments. For example, in some other application scenarios or embodiments, the first temperature control system 10 and the second temperature control system 20 can also send heating data such as the current, voltage, resistance, and power of the first heating resistor 14 and the second heating resistor 24 to the host computer 30 via a network. The host computer 30 can clearly display the heating data using a display device, which can be a laptop computer, desktop computer, tablet computer, smartphone, or other suitable type of device.

[0041] Please refer to Figure 1b, which schematically illustrates the structure of a temperature control system provided in some embodiments of this application.

[0042] As shown in Figure 1b, the temperature control system 100 includes a controller 110, a heater 120, and a standard sampling module 130. The heater 120 includes a heating resistor 121. The controller 110 is communicatively connected to the standard sampling module 130, and the standard sampling module 130 is electrically connected to the heating resistor 121.

[0043] The standard sampling module 130 is configured with a standard measurement channel and a reference measurement channel. Both the standard and reference measurement channels have multiple voltage gain ranges. The reference measurement channel is configured with measurement components whose measurement accuracy meets preset accuracy conditions and whose measured values ​​meet preset stability conditions. The standard measurement channel is configured with measurement components whose measurement accuracy and measured value stability are of conventional level. It can be understood that the measurement accuracy and stability of the measurement components configured in the standard measurement channel are lower than those of the measurement components configured in the reference measurement channel. The preset accuracy conditions refer to voltage measurement accuracy being greater than or equal to a preset voltage accuracy threshold and current measurement accuracy being greater than or equal to a preset current accuracy threshold. For example, if the voltage accuracy threshold is 0.001V and the current accuracy threshold is 0.001A, then when the voltage measurement accuracy is greater than or equal to 0.001V and the current measurement accuracy is greater than or equal to 0.001A, the measurement accuracy meets the preset accuracy conditions. The preset stability condition refers to the fact that the fluctuation range of the voltage measurement value collected for a preset number of consecutive times is less than or equal to the preset voltage fluctuation threshold, and the fluctuation range of the current measurement value collected for a preset number of consecutive times is less than or equal to the preset current fluctuation threshold. For example, if the voltage fluctuation threshold is 0.0002V, the current fluctuation threshold is 0.0002A, and the preset number of times is 3, then when the fluctuation range of the voltage measurement value collected for 3 consecutive times is less than or equal to 0.0002V (that is, the difference between the maximum and minimum values ​​of the 3 voltage measurement values ​​collected is less than or equal to 0.0002V), and the fluctuation range of the current measurement value collected for 3 consecutive times is less than or equal to 0.0002A (that is, the difference between the maximum and minimum values ​​of the 3 current measurement values ​​collected is less than or equal to 0.0002A), it means that the measured value meets the preset stability condition.

[0044] It is easy to understand that the measurement components configured in the standard measurement channel or reference measurement channel include, but are not limited to, resistors, operational amplifiers, MCUs (Microcontroller Units), etc. That is, the standard sampling module 130 includes, but is not limited to, resistors, operational amplifiers, MCUs (Microcontroller Units), etc.

[0045] Please refer to Figure 1c, which schematically illustrates the structure of a temperature control system provided in some other embodiments of this application.

[0046] As shown in Figure 1c, in some embodiments, the temperature control system 100 further includes a backup sampling module 140, which is communicatively connected to the controller 110 and electrically connected to the heating resistor 121.

[0047] Both the standard sampling module 130 and the backup sampling module 140 are configured to sample the voltage and current of the heating resistor 121 to obtain voltage code values ​​and current code values. Specifically, the standard sampling module 130 can sample the voltage of the heating resistor 121 at different voltage gain ranges through a standard measurement channel and a reference measurement channel to obtain voltage code values, and it can also sample the current of the heating resistor 121 through the same standard and reference measurement channels to obtain current code values. In some embodiments, when the standard sampling module 130 malfunctions or the measurement error is too large, the backup sampling module 140 is activated to sample the voltage and current of the heating resistor 121 to obtain voltage code values ​​and current code values. It should be understood that the backup sampling module 140 is also configured with a standard measurement channel and a reference measurement channel, and both the standard and reference measurement channels have multiple voltage gain ranges.

[0048] It is worth noting that the voltage gain range refers to the voltage range detected by the standard sampling module 130 through the standard measurement channel or reference measurement channel. For example, in some embodiments, the voltage gain range can be 0-120V, 0-10V, 0-2V, 0-200mV, etc. Different voltage gain ranges correspond to different least significant bits of precision. For a standard sampling module 130 with the same number of bits (e.g., 12 bits), under a voltage gain range of 0-200mV, the precision of one least significant bit is approximately... Within the 0-2V voltage gain range, the accuracy of a single least significant bit is approximately... .

[0049] Referring to Figure 1d, in some embodiments, the standard sampling module 130 includes a voltage sampling circuit 131 and a current sampling resistor 132. The voltage sampling circuit 131 is configured to detect the voltage of the sampling heating resistor 121 to obtain a voltage code value, and the current sampling resistor 132 is configured to detect the current of the sampling heating resistor 121 to obtain a current code value.

[0050] In some embodiments, please refer to FIG1e, which shows a voltage sampling circuit 131 and a current sampling resistor 132 (i.e., a resistor). ) and heating resistor 121 (i.e., resistor) The connection relationship of the current sampling resistor 132 (i.e., resistor 132). ) and heating resistor 121 (i.e., resistor) The voltage sampling circuit 131 and the heating resistor 121 (i.e., resistor) are connected in series. The voltage sampling circuit 131 is connected in parallel with the heating resistor 121 (i.e., resistor 121). The two ends in parallel.

[0051] Please refer to Figure 2a, which schematically shows a structural diagram of a voltage sampling circuit in some embodiments of this application.

[0052] Specifically, as shown in Figure 2a, the voltage sampling circuit 131 includes a multiplexer 1311, a microcontroller 1312, multiple voltage gain branches (i.e., the first voltage gain branch A1, the second voltage gain branch A2, the third voltage gain branch A3 and the fourth voltage gain branch A4), a first resistor R1, a second resistor R2, a first operational amplifier 1313 and a second operational amplifier 1314.

[0053] The multiplexer 1311 includes a first control terminal B1, a second control terminal B2, an input terminal D, a first output terminal S1, a second output terminal S2, a third output terminal S3, and a fourth output terminal S4. The first control terminal B1 and the second control terminal B2 are electrically connected to the microcontroller 1312. The input terminal D is connected to the first end of the first resistor R1, and the second end of the first resistor R1 is grounded. The first output terminal S1 is connected to the first end of the first voltage gain branch A1, the second output terminal S2 is connected to the first end of the second voltage gain branch A2, the third output terminal S3 is connected to the first end of the third voltage gain branch A3, and the fourth output terminal S4 is connected to the first end of the fourth voltage gain branch A4. The second ends of the first voltage gain branch A1, the second voltage gain branch A2, the third voltage gain branch A3, and the fourth voltage gain branch A4 are all connected to the first end of the second resistor R2. The non-inverting input of the first operational amplifier 1313 is connected to the heating resistor 121, the inverting input of the first operational amplifier 1313 is connected to the first end of the first resistor R1, the output of the first operational amplifier 1313 is connected to the first end of the second resistor R2, the second end of the second resistor R2 is connected to the non-inverting input of the second operational amplifier 1314, and the inverting input of the second operational amplifier 1314 is connected to its output.

[0054] The working principle of voltage sampling circuit 131 is as follows.

[0055] The microcontroller 1312 outputs a combination of level signals from the first control terminal B1 and the second control terminal B2 to the multiplexer 1311. The multiplexer 1311 selects and connects the corresponding output terminal according to the combination of level signals, thereby connecting the corresponding voltage gain branch. For example, the level signal combination includes 00 (i.e., the level signals of the first control terminal B1 and the second control terminal B2 are both 0), 01 (i.e., the level signals of the first control terminal B1 and the second control terminal B2 are 0 and 1 respectively), and 10 (i.e., the level signals of the first control terminal B1 and the second control terminal B2 are 1 and 1 respectively). The signals are 1 and 0, and 11 (i.e., the level signals of the first control terminal B1 and the second control terminal B2 are both 1), respectively, indicating that the first output terminal S1, the second output terminal S2, the third output terminal S3, and the fourth output terminal S4 are selected to be turned on, thereby turning on the first voltage gain branch A1, the second voltage gain branch A2, the third voltage gain branch A3, and the fourth voltage gain branch A4. The corresponding voltage gain branches are connected to the feedback loop of the first-stage operational amplifier (i.e., the first operational amplifier 1313) to achieve different voltage gain adjustments. Each voltage gain branch represents a different feedback resistor configuration, corresponding to a different amplification factor.

[0056] In this circuit, the first resistor R1 is connected to the input terminal D of the multiplexer 1311. R1 works with the first operational amplifier 1313 to construct a feedback network for voltage gain adjustment. The multiplexer 1311 selects and connects the corresponding voltage gain branch based on the combination of level signals, inputting the voltage input signal to the inverting input terminal of the first operational amplifier 1313 to participate in the construction of the negative feedback network. The first operational amplifier 1313 is a programmable gain amplifier. The voltage input signal is input from the non-inverting input terminal (+). The multiplexer 1311 selects and connects the selected voltage gain branch to the inverting input terminal (-), forming a negative feedback network through the first resistor R1 to achieve programmable amplification factor control.

[0057] When the microcontroller 1312 selects to connect different voltage gain branches via the first control terminal B1 and the second control terminal B2, the equivalent resistance of the feedback network will change, thereby achieving different voltage gains. The gain formula can be referenced from the inverting amplifier: , This represents the gain resistor in the voltage gain branch selected by the multiplexer 1311. This represents the input circuit resistance at the inverting input terminal of the first operational amplifier 1313. and Together they determine the voltage gain of the first operational amplifier 1313, enabling signal amplification at different ratios.

[0058] The microcontroller 1312 is the control core of the entire voltage sampling circuit 131. By combining the level signals of the first control terminal B1 and the second control terminal B2, it controls the multiplexer 1311 to switch the voltage gain branch, thereby changing the voltage gain of the first-stage operational amplifier (i.e., the first operational amplifier 1313). The microcontroller 1312 can flexibly configure the voltage gain according to system requirements (such as the amplitude of the input signal and output requirements).

[0059] The voltage signal amplified by the first operational amplifier 1313 is input to the second operational amplifier 1314 through the second resistor R2. The second operational amplifier 1314 is configured as a voltage follower (i.e., a buffer). The voltage signal is input from the non-inverting input (+) of the second operational amplifier 1314, and the output of the second operational amplifier 1314 is directly fed back to the inverting input (-). Therefore, the voltage gain is approximately 1. The second operational amplifier 1314 is used to isolate the preceding circuit from the load, provide low output impedance, improve the system's load-driving capability, and no longer amplify the voltage, but only maintains the signal voltage, ensuring that the output signal is stable and unaffected by the load.

[0060] Please refer to Figure 2b, which schematically illustrates the structure of the controller in a temperature control system provided in some embodiments of this application.

[0061] As shown in Figure 2b, the controller 110 includes at least one processor 111 and a memory 112 connected in communication. Figure 2b uses a bus system 113 as an example, with one processor 111 connected. The various components in the controller 110 are coupled together via the bus system 113, which is used to achieve communication between the components. It is easy to understand that the bus system 113 may include not only a data bus but also a power bus, a control bus, and a status signal bus. However, for clarity and brevity, all buses are labeled as bus system 113 in Figure 2b. It is understood that the structure shown in the embodiment of Figure 2b is merely illustrative and does not limit the structure of the controller described above. For example, the controller may include more or fewer components than the structure shown in Figure 2b, or have a different configuration than the structure shown in Figure 2b.

[0062] For example, processor 111 is configured to provide computational and control capabilities to support controller 110 in executing corresponding business logic and functions, such as supporting controller 110 in executing any of the temperature control methods for semiconductor chamber heaters provided in the embodiments of this application, or executing the steps in any possible implementation of any of the temperature control methods for semiconductor chamber heaters provided in the embodiments of this application. It is understood that processor 111 can be a general-purpose processor, including a central processing unit (CPU), a network processor (NP), etc.; it can also be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components.

[0063] The memory 112, as a non-transitory computer-readable storage medium, can be used to store non-transitory software programs, non-transitory computer-executable programs, instructions, and modules, such as the program, instructions, and modules corresponding to the temperature control method for a semiconductor chamber heater in the embodiments of this application. In some embodiments, the memory 112 may include a program storage area and a data storage area. The program storage area may store an operating system, an application program required for at least one function, and the data storage area may store data created according to the use of the processor 111. The processor 111 executes various functional applications and data processing of the controller 110 by running the non-transitory software programs, instructions, and modules stored in the memory 112, so as to implement any of the temperature control methods for a semiconductor chamber heater provided in the embodiments of this application, or execute the steps in any possible implementation of any of the temperature control methods for a semiconductor chamber heater provided in the embodiments of this application. In some embodiments, the memory 112 may include high-speed random access memory and may also include non-transitory memory. For example, at least one disk storage device, flash memory device, or other non-transitory solid-state storage device. In some embodiments, the memory 112 may also include memory remotely located relative to the processor 111, and these remotely located memories may be connected to the processor 111 through a communication network. It is understood that examples of the aforementioned communication networks include, but are not limited to, the Internet, corporate intranets, local area networks, mobile communication networks, and combinations thereof.

[0064] As can be understood from the above, the implementing entity of any of the temperature control methods for semiconductor chamber heaters provided in the embodiments of this application can be any suitable type of controller with certain computing and control capabilities. For example, it can be implemented by the controller 110 of the temperature control system 100 described above. In some feasible implementations, the temperature control method for any of the semiconductor chamber heaters provided in the embodiments of this application can be implemented by a processor executing computer program instructions stored in a memory.

[0065] The temperature control method for a semiconductor chamber heater provided in this application will be described in detail below with reference to exemplary applications and implementations of the temperature control system provided in the embodiments of this application.

[0066] Please refer to Figure 3, which schematically illustrates a flow chart of a temperature control method for a semiconductor chamber heater provided in some embodiments of this application.

[0067] Those skilled in the art will understand that the temperature control method for the semiconductor chamber heater provided in this application embodiment can be applied to the controller of the above-mentioned temperature control system (e.g., the controller 110 of the temperature control system 100). Specifically, the execution entity of the temperature control method for the semiconductor chamber heater is one or at least two controllers of the temperature control system.

[0068] Specifically, referring to Figure 3, the temperature control method for the semiconductor chamber heater includes steps S31 to S36.

[0069] Step S31: Obtain the candidate voltage code value and candidate current code value of the heating resistor.

[0070] In this embodiment, the candidate voltage code value is obtained by the standard sampling module sampling the voltage of the heating resistor through the standard measurement channel at the candidate voltage gain range. The candidate voltage code value represents the voltage value of the heating resistor sampled by the standard sampling module through the standard measurement channel at the candidate voltage gain range. The candidate voltage gain range is any one of multiple voltage gain ranges, and each voltage gain range corresponds to a voltage calibration coefficient. The voltage calibration coefficient is used to calibrate the voltage value sampled at the corresponding voltage gain range to obtain the voltage measurement value of the heating resistor. For example, the voltage calibration coefficient corresponding to the candidate voltage gain range is used to calibrate the voltage value sampled at the candidate voltage gain range.

[0071] In this embodiment, after the system is powered on or reset, it is selected or switched to the lowest voltage gain range (that is, the voltage gain range with the largest sampling voltage range) by default. In this way, when the magnitude of the heating resistor voltage is unknown, the measuring components in the standard sampling module are protected from damage, and the equipment is ensured to be safe.

[0072] The candidate current code value is obtained by the standard sampling module through the standard measurement channel to sample the current of the heating resistor. The candidate current code value represents the current value of the heating resistor obtained by the standard sampling module through the standard measurement channel.

[0073] For example, in this application embodiment, candidate voltage code values ​​and candidate current code values ​​of the heating resistor are obtained from a standard sampling module.

[0074] Step S32: Calculate the voltage measurement value of the heating resistor based on the candidate voltage code value and the candidate voltage calibration coefficient corresponding to the candidate voltage gain range.

[0075] For example, the corresponding candidate voltage calibration coefficient is determined according to the candidate voltage gain range, the candidate voltage calibration coefficient is added to the first preset calibration value to obtain the target calibration coefficient, and the candidate voltage code value is multiplied by the target calibration coefficient to obtain the voltage measurement value of the heating resistor.

[0076] For another example, after determining the corresponding candidate voltage calibration coefficient based on the candidate voltage gain range, the difference between the candidate voltage calibration coefficient and the second preset calibration value is divided by the candidate voltage calibration coefficient to obtain the reference calibration coefficient. The candidate voltage code value is then multiplied by the reference calibration coefficient to obtain the voltage measurement value of the heating resistor.

[0077] It is easy to understand that any other suitable method can be used to calculate the voltage measurement value of the heating resistor based on the candidate voltage code value and the candidate voltage calibration coefficient corresponding to the candidate voltage gain range. This application embodiment does not limit this in any way.

[0078] Step S33: Calculate the measured current value of the heating resistor based on the candidate current code value and current calibration data.

[0079] In this embodiment, the current calibration data represents the current calibration coefficient corresponding to the candidate current code value.

[0080] For example, the corresponding current calibration coefficient is determined based on the candidate current code value, the current calibration coefficient is added to the preset first current calibration value to obtain the first calibration coefficient, and the candidate current code value is multiplied by the first calibration coefficient to obtain the current measurement value of the heating resistor.

[0081] For another example, after determining the corresponding current calibration coefficient based on the candidate current code value, the difference between the current calibration coefficient and the preset second current calibration value is divided by the current calibration coefficient to obtain the second calibration coefficient. The candidate current code value is then multiplied by the second calibration coefficient to obtain the current measurement value of the heating resistor.

[0082] It is easy to understand that any other suitable method can be used to calculate the current measurement value of the heating resistor based on the candidate current code value and the current calibration coefficient corresponding to the candidate current code value. This application embodiment does not limit this in any way.

[0083] Step S34: Divide the voltage measurement value by the current measurement value to obtain the reference resistance value of the heating resistor.

[0084] Step S35: Based on the reference resistance value and the temperature resistance curve of the heating resistor, obtain the reference temperature value of the heating resistor.

[0085] In some embodiments, a reference temperature value for the heating resistor is obtained based on a reference resistance value and a temperature resistance curve of the heating resistor, specifically including steps S351 to S352.

[0086] Step S351: Obtain the temperature resistance curve of the heating resistor.

[0087] Step S352: Determine the temperature value corresponding to the reference resistance value in the temperature resistance curve as the reference temperature value of the heating resistor.

[0088] The positive temperature coefficient (PTC) characteristic refers to the physical property that the resistance of a material increases with increasing temperature; the temperature and resistance of a material are positively correlated. In this embodiment, the heating resistor has a significant PTC characteristic. By calculating its resistance value, its temperature can be indirectly deduced, thereby achieving closed-loop control of the heating process of the heating resistor. Based on the PTC characteristic curve (i.e., the temperature-resistance curve) of the heating resistor, the accurate temperature value of the heating resistor is calculated by looking up a table or formula. In this embodiment, the temperature-resistance curve is used to characterize the correspondence between the resistance and temperature of the heating resistor.

[0089] For example, based on the type of heating resistor, its corresponding temperature resistance curve is obtained. Based on the reference resistance value of the heating resistor, the temperature corresponding to the reference resistance value is found in the temperature resistance curve, and the temperature corresponding to the reference resistance value is determined as the reference temperature value of the heating resistor.

[0090] For example, please refer to Figure 4, which schematically shows the temperature resistance curve of the heating resistor. The schematic diagram shows that the reference resistance value of the heating resistor is... In the temperature resistance curve Neutral and reference resistance value The corresponding temperature is Then determine the temperature This is the reference temperature value for the heating resistor.

[0091] It should be understood that other methods can also be used to characterize the relationship between the resistance and temperature of the heating resistor. For example, tables or formulas can be used to characterize the relationship between the resistance and temperature of the heating resistor. The temperature corresponding to the reference resistance value can be determined in the table as the reference temperature value of the heating resistor. Alternatively, the reference resistance value can be substituted into the formula to calculate the reference temperature value of the heating resistor.

[0092] Step S36: Adjust the heating power of the heating resistor based on the reference temperature value.

[0093] For example, a reference temperature value is output to a temperature controller (e.g., a PID controller). After receiving the reference temperature value, the temperature controller determines the power corresponding to the reference temperature value as the heating power of the heating resistor. This forms a closed-loop regulation control, which precisely regulates the heating power of the heating resistor. As a result, the temperature control system provides a stable and controllable thermodynamic environment for the thin film deposition process (such as physical vapor deposition, chemical vapor deposition, atomic layer deposition, etc.) by precisely controlling the heating temperature, atmosphere, and heating method of the heating resistor during the thin film preparation process. Ultimately, this ensures the purity, thickness uniformity, crystallinity, and interfacial bonding performance of the thin film.

[0094] In this embodiment, the precise voltage measurement value of the heating resistor is calculated by calibrating the candidate voltage gain range with the candidate voltage calibration coefficient, and the precise current measurement value of the heating resistor is calculated by calibrating the candidate current code value with the current calibration coefficient. Thus, the precise reference resistance value of the heating resistor is calculated based on the voltage and current measurement values. Therefore, the precise reference temperature value of the heating resistor can be obtained based on the reference resistance value, and the heating power of the heating resistor can be precisely adjusted, improving the accuracy and stability of the heating resistor temperature measurement and achieving precise control of the heating resistor temperature.

[0095] In some embodiments, the voltage measurement value of the heating resistor is calculated based on the candidate voltage code value and the candidate voltage calibration coefficient corresponding to the candidate voltage gain range, specifically including steps S321 to S322.

[0096] Step S321: Calculate the candidate voltage estimate of the heating resistor based on the candidate voltage code value and the candidate voltage calibration coefficient.

[0097] For example, the candidate voltage code value is multiplied by the candidate voltage calibration coefficient to obtain the candidate voltage estimate of the heating resistor. As another example, the candidate voltage calibration coefficient is added to the first coefficient value to obtain the standard voltage calibration coefficient, and the candidate voltage code value is multiplied by the standard voltage calibration coefficient to obtain the candidate voltage estimate of the heating resistor.

[0098] In some embodiments, the candidate voltage estimate of the heating resistor is calculated based on the candidate voltage code value and the candidate voltage calibration coefficient, specifically including steps S3211 to S3214.

[0099] Step S3211: Determine the unit voltage value of the candidate voltage gain range.

[0100] Step S3212: Multiply the candidate voltage code value by the unit voltage value to obtain the first voltage value.

[0101] Step S3213: Multiply the first voltage value by the voltage deviation ratio to obtain the second voltage value.

[0102] Step S3214: Add the second voltage value to the voltage bias parameter to obtain the candidate voltage estimate.

[0103] In this embodiment, the unit voltage value is the voltage value corresponding to one voltage code value of the standard sampling module under the candidate voltage gain range. That is, the voltage value / precision corresponding to one least significant bit of the standard sampling module under the candidate voltage gain range. For example, for a 12-bit standard sampling module, under the voltage gain range of 0-2V, the voltage value / precision corresponding to one least significant bit is calculated to be approximately... That is, the unit voltage value is The candidate voltage calibration coefficients include the voltage deviation ratio and the voltage bias parameter.

[0104] In this embodiment, the candidate voltage code value represents the number of least significant bits / voltage code values ​​of the standard sampling module within the candidate voltage gain range. For example, after determining the unit voltage value of the candidate voltage gain range, the candidate voltage code value (i.e., the number of least significant bits / voltage code values) is multiplied by the unit voltage value (i.e., the voltage value / precision corresponding to one least significant bit / voltage code value) to obtain a first voltage value. The first voltage value is then multiplied by the voltage deviation ratio to obtain a second voltage value. Finally, the second voltage value is added to the voltage bias parameter to obtain the candidate voltage estimate.

[0105] Step S322: When the predicted candidate voltage is greater than or equal to the first voltage threshold and less than or equal to the second voltage threshold, the predicted candidate voltage is filtered in steady-state filtering mode to obtain the voltage measurement value.

[0106] The first voltage threshold is the product of the upper limit of the candidate voltage gain range and a first preset value, and the second voltage threshold is the product of the upper limit of the candidate voltage gain range and a second preset value. For example, if the candidate voltage gain range is 0-2V, its upper limit is 2V, and the first and second preset values ​​are respectively... and Then the first voltage threshold is The second voltage threshold is In this embodiment, by limiting the candidate voltage estimate to between a first voltage threshold and a second voltage threshold, the standard sampling module measures the sampled voltage value within the most suitable voltage gain range, thereby improving the accuracy and stability of voltage sampling.

[0107] In this embodiment, the candidate voltage estimate is compared with the first voltage threshold and the second voltage threshold respectively. When the candidate voltage estimate is greater than or equal to the first voltage threshold and less than or equal to the second voltage threshold, the filtering mode is switched to the steady-state filtering mode, and the candidate voltage estimate is filtered in the steady-state filtering mode to obtain the voltage measurement value.

[0108] Understandably, steady-state filtering mode refers to using a Kalman filter for filtering in steady-state optimization mode, where the system state equation (with signal values ​​as states) is:

[0109]

[0110]

[0111] in, for The predicted value at that moment (i.e., the voltage measurement value), for Predicted value at time, for The measured value at time (i.e., the candidate voltage estimate). For process noise (i.e., following a mean of 0 and a covariance of ), normal distribution ), It is the measurement noise (i.e., it follows a mean of 0 and a covariance of ). normal distribution Process noise covariance It is not fixed, but dynamically adjusted according to the real-time rate of change of the signal, that is:

[0112]

[0113] In the above formula, Based on process noise, it represents the inherent dynamic uncertainty of the signal. The adjustment coefficient is used to control the rate of change of the signal. The extent of the impact It is the absolute value of the rate of change of the signal, reflecting the drastic degree of signal change.

[0114] When the signal changes drastically Enlargement, leading to As the value increases, the Kalman gain of the Kalman filter also increases, leading to greater confidence in the new measurement. This improves the tracking speed of rapidly changing signals and avoids losing signals due to over-reliance on lagging predictions.

[0115] When the signal is stable Reduced, leading to As the Kalman gain decreases, the previous predictions are trusted more. This optimizes steady-state accuracy and effectively suppresses measurement noise, thereby avoiding unnecessary fluctuations caused by measurement noise interference.

[0116] In some embodiments, the voltage measurement value of the heating resistor is calculated based on the candidate voltage code value and the candidate voltage calibration coefficient corresponding to the candidate voltage gain range, and the method further includes steps S323 to S325.

[0117] Step S323: In response to the candidate voltage estimate being less than the first voltage threshold, switch the standard sampling module to the first voltage gain range so that the standard sampling module performs voltage sampling on the heating resistor under the first voltage gain range to obtain the first voltage code value, and calculate the first voltage estimate of the heating resistor based on the first voltage code value and the first voltage calibration coefficient corresponding to the first voltage gain range.

[0118] In this embodiment, the accuracy of the least significant bit of the first voltage gain range is greater than the accuracy of the least significant bit of the candidate voltage gain range.

[0119] For example, when the estimated value of the candidate voltage is detected to be less than the first voltage threshold, it indicates that the candidate voltage code value only occupies a few least significant bits of the candidate voltage gain range, which may lead to a large error in the measured voltage value. In this case, the voltage gain range of the standard sampling module is switched to the first voltage gain range, so that the standard sampling module resamples the voltage of the heating resistor under the first voltage gain range to obtain the first voltage code value, and recalculates the first voltage estimated value of the heating resistor according to the first voltage code value and the first voltage calibration coefficient corresponding to the first voltage gain range.

[0120] Step S324: Switch to transient filtering mode, and filter the first voltage estimate in transient filtering mode to obtain the first voltage filtered value.

[0121] For example, the filtering mode is switched to transient filtering mode, and the first voltage estimate is filtered in transient filtering mode to obtain the first voltage filtered value.

[0122] It is understandable that transient filtering mode refers to using a high-order low-pass filter for filtering during transient switching. The system monitors switching command signals from the voltage gain channel control circuit or the current channel calibration logic in real time. When a valid switching event is detected, a time-configurable "transient suppression window" timer is immediately started. The duration of the transient suppression window is a value pre-calibrated experimentally based on the inherent characteristics of the hardware circuit (e.g., multiplexer switching time, op-amp setup time), typically ranging from 1 to 10 milliseconds. During the transient suppression window, the system determines that the signal is in an unstable state.

[0123] During the transient suppression window, the system activates a specially designed high-order low-pass filter (in transient filtering mode) to filter the first voltage estimate, powerfully and rapidly attenuating high-frequency noise and switching spikes to obtain the filtered first voltage value. Taking a second-order Butterworth low-pass filter as an example, its difference equation form in the discrete domain (Z-domain) is:

[0124]

[0125] in, It is the current moment. First voltage estimate, yes The first voltage estimate at time t, yes The first voltage estimate at time t, It is the current moment. The first filtered voltage value output after filtering. yes The first filtered voltage value output after time-lapse filtering. yes The first filtered voltage value output after time-lapse filtering. , , , as well as These are filter coefficients, determined by the cutoff frequency. Sampling frequency This is a joint decision. In transient filtering mode, It is set to a small value (e.g., 1-10Hz) to provide extremely strong noise suppression capabilities.

[0126] In this embodiment, when the "transient suppression window" timer expires, the system does not immediately switch the filtering mode, but first performs a steady-state determination. The determination condition is the rate of change of the signal over N consecutive sampling periods (e.g., N=5). All values ​​are below the preset stability threshold. Once a steady state is determined, the system seamlessly switches to steady-state filtering mode, using a Kalman filter for filtering.

[0127] Step S325: In response to the first voltage filter value being greater than or equal to the first voltage threshold and less than or equal to the second voltage threshold, switch to steady-state filtering mode, filter the first voltage filter value in steady-state filtering mode, and obtain the voltage measurement value of the heating resistor.

[0128] In this step, when the first voltage filter value is greater than or equal to the first voltage threshold and less than or equal to the second voltage threshold, the filtering mode is switched to the steady-state filtering mode, and the first voltage filter value is filtered in the steady-state filtering mode to obtain the voltage measurement value of the heating resistor.

[0129] In some embodiments, the voltage measurement value of the heating resistor is calculated based on the candidate voltage code value and the candidate voltage calibration coefficient corresponding to the candidate voltage gain range, and specifically includes steps S326 to S328.

[0130] Step S326: In response to the candidate voltage estimate being greater than the second voltage threshold, switch the standard sampling module to the second voltage gain range so that the standard sampling module performs voltage sampling on the heating resistor under the second voltage gain range to obtain the second voltage code value, and calculate the second voltage estimate of the heating resistor based on the second voltage code value and the second voltage calibration coefficient corresponding to the second voltage gain range.

[0131] In this embodiment, the accuracy of the least significant bit of the second voltage gain range is less than the accuracy of the least significant bit of the candidate voltage gain range.

[0132] For example, when the estimated value of the candidate voltage is detected to be greater than the second voltage threshold, it indicates that the candidate voltage code value occupies most of the least significant bits of the candidate voltage gain range, which may lead to a large error in the measured voltage value (e.g., "numerical overflow" or "measurement distortion" may occur due to signal oversaturation). In this case, the voltage gain range of the standard sampling module is switched to the second voltage gain range, so that the standard sampling module resamples the voltage of the heating resistor under the second voltage gain range to obtain the second voltage code value, and recalculates the second voltage estimated value of the heating resistor according to the second voltage code value and the second voltage calibration coefficient corresponding to the second voltage gain range.

[0133] Step S327: Switch to transient filtering mode, and filter the second voltage estimate in transient filtering mode to obtain the second voltage filtered value.

[0134] For example, the filtering mode is switched to transient filtering mode, and the second voltage estimate is filtered in transient filtering mode to obtain the second voltage filtered value. Step S327 is similar to the aforementioned step S324 in that a high-order low-pass filter is used to filter the second voltage estimate in transient switching mode to obtain the second voltage filtered value, which will not be described in detail here.

[0135] Step S328: In response to the second voltage filter value being greater than or equal to the first voltage threshold and less than or equal to the second voltage threshold, switch to steady-state filtering mode, filter the second voltage filter value in steady-state filtering mode, and obtain the voltage measurement value of the heating resistor.

[0136] In this step, when the second voltage filter value is greater than or equal to the first voltage threshold and less than or equal to the second voltage threshold, the filtering mode is switched to the steady-state filtering mode, and the second voltage filter value is filtered in the steady-state filtering mode to obtain the voltage measurement value of the heating resistor.

[0137] In this embodiment, the approximate voltage range of the actual voltage is determined based on the candidate voltage estimate, and the system automatically switches to the corresponding voltage gain range (such as a first voltage gain range with higher least significant bit accuracy or a second voltage gain range with lower least significant bit accuracy). This ensures that the voltage measurement signal (i.e., the voltage code value) is as close as possible to the full scale of the voltage gain range (i.e., occupying most of the least significant bits of the voltage gain range), improving resolution / accuracy. When the candidate voltage estimate is detected to exceed or equal to the upper limit of the voltage gain range, the system immediately switches back to the largest voltage gain range (e.g., 0-120V) and re-executes the voltage gain range determination process. In this way, adaptive adjustment and switching of the voltage gain range are achieved.

[0138] The "effective resolution" of the voltage gain range is strongly correlated with the proportion of the voltage signal filling the full range (i.e., the closer the voltage signal is to the full scale, the smaller the actual voltage represented by the least significant bit, and the higher the resolution). Through the aforementioned automatic voltage gain range switching mechanism, in low-voltage scenarios, it switches to a high-precision voltage gain range, ensuring the voltage signal fills the small range and maximizing resolution / accuracy. In high-voltage scenarios, it switches to a low-precision voltage gain range, adapting the voltage signal to the large range, preventing voltage signal saturation and ensuring the measurement range. Through this method, the input voltage signal amplitude dynamically approaches the full scale of the voltage gain range under all operating conditions, thus achieving an optimal balance between "high resolution at low voltages" and "wide measurement range at high voltages" in the measurement accuracy of the heating resistor voltage.

[0139] In some embodiments, the current measurement value of the heating resistor is calculated based on the candidate current code value and current calibration data, specifically including steps S331 to S334.

[0140] Step S331: Calculate the first current value of the heating resistor based on the candidate current code value.

[0141] Among them, the current value corresponding to one current code value of the standard sampling module is the unit current value, that is, the current value / precision corresponding to one least significant bit of the standard sampling module in the current measurement range.

[0142] In some embodiments, the first current value of the heating resistor is calculated based on the candidate current code value, specifically including step S3311.

[0143] Step S3311: Multiply the candidate current code value by the unit current value to obtain the first current value.

[0144] In this step, the candidate current code value represents the number of least significant bits / current code values ​​of the standard sampling module under the current measurement range. The candidate current code value (i.e., the number of least significant bits / current code values) is multiplied by the unit current value (the current value / precision corresponding to one least significant bit / current code value) to obtain the first current value of the heating resistor.

[0145] Step S332: Obtain the temperature value of the current sampling resistor.

[0146] Step S333: Determine the current calibration coefficients corresponding to the reference temperature range and reference current range in the current calibration data as the reference current calibration coefficients.

[0147] The reference temperature range is the temperature range in which the current sampling resistor's temperature value falls, and the reference current range is the current range in which the first current value falls. Understandably, since the current sampling resistor is connected in series with the heating resistor, the first current value of the heating resistor is the same as the first current value of the current sampling resistor.

[0148] In this embodiment, the current calibration data includes temperature range, current range, and current calibration coefficients corresponding to the temperature range and current range.

[0149] For example, the current calibration data is shown in Table 1 below.

[0150] Table 1:

[0151]

[0152] For example, the current sampling resistor is equipped with a temperature sensor configured to detect and acquire the temperature of the current sampling resistor. In this embodiment, the temperature value of the current sampling resistor detected by the temperature sensor is acquired. Based on the temperature value of the current sampling resistor and a first current value, the temperature range in which the temperature value falls within the current calibration data is determined to be a reference temperature range, and the current range in which the first current value falls is determined to be a reference current range. Therefore, the current calibration coefficients corresponding to the reference temperature range and the reference current range are reference current calibration coefficients.

[0153] In some embodiments, as shown in Table 1, when the reference temperature range is [25-50)℃ and the reference current range is [1-5)A, the corresponding current calibration coefficient is K22, that is, the current calibration coefficient K22 is the reference current calibration coefficient.

[0154] Step S334: Calibrate the first current value according to the reference current calibration coefficient to obtain the current measurement value.

[0155] In some embodiments, the first current value is multiplied by a reference current calibration factor to obtain the current measurement value of the heating resistor. In other embodiments, the reference current calibration factor is added to a preset reference factor to obtain a standard current calibration factor, and the first current value is multiplied by the standard current calibration factor to obtain the current measurement value of the heating resistor.

[0156] In some embodiments, the first current value is calibrated according to the reference current calibration coefficient to obtain the current measurement value, specifically including steps S3341 to S3342.

[0157] Step S3341: Multiply the first current value by the current deviation ratio to obtain the second current value.

[0158] Step S3342: Add the second current value to the current bias parameter to obtain the current measurement value.

[0159] In this step, the reference current calibration coefficient includes the current deviation ratio and the current bias parameter. The first current value is multiplied by the current deviation ratio to obtain the second current value. Then, the second current value is added to the current bias parameter to obtain the measured current value.

[0160] In some embodiments, the temperature control method for a semiconductor chamber heater further includes steps S91 to S95.

[0161] Step S91: Connect the standard measurement channel and the reference measurement channel to the reference voltage source, and connect the standard measurement channel and the reference measurement channel to the reference current source.

[0162] In this embodiment, the reference voltage source is an internal voltage source with ultra-low drift in the temperature control system to provide a long-term stable voltage signal with a known true value. The reference current source is an internal current source with ultra-low drift in the temperature control system to provide a long-term stable current signal with a known true value. Both the standard measurement channel and the reference measurement channel are electrically connected to the reference voltage source and the reference current source.

[0163] Step S92: Control the reference voltage source to output a reference voltage signal, and control the reference current source to output a reference current signal.

[0164] Step S93: Sample the reference voltage signal through the standard measurement channel and the reference measurement channel respectively to obtain the standard sampled voltage value and the reference sampled voltage value.

[0165] In this embodiment, the standard sampling voltage value is the voltage value obtained by calibrating the original voltage value sampled from the standard measurement channel based on the voltage calibration coefficient.

[0166] Specifically, the reference voltage signal is sampled through the standard measurement channel and the reference measurement channel under the reference voltage gain range to obtain the first original voltage value and the reference sampled voltage value. Based on the voltage calibration coefficient corresponding to the reference voltage gain range, the first original voltage value is calculated and calibrated to obtain the calibrated standard sampled voltage value.

[0167] Step S94: Sample the reference current signal through the standard measurement channel and the reference measurement channel respectively to obtain the standard sampled current value and the reference sampled current value.

[0168] In this embodiment, the standard sampling current value is the current value obtained by calibrating the original current value sampled from the standard measurement channel based on the current calibration coefficient.

[0169] Specifically, the reference current signal is sampled through the standard measurement channel and the reference measurement channel under the reference current measurement range to obtain the first original current value and the reference sampled current value. The first original current value is then calculated and calibrated based on the current calibration coefficient corresponding to the first original current value to obtain the calibrated standard sampled current value.

[0170] Step S95: Based on the standard sampling voltage value, reference sampling voltage value, standard sampling current value, and reference sampling current value, determine whether the standard measurement channel is working properly.

[0171] In some embodiments, it is determined whether the standard measurement channel is working properly based on the standard sampling voltage value, the reference sampling voltage value, the standard sampling current value, and the reference sampling current value, specifically including steps S951 to S954.

[0172] Step S951: Calculate the difference between the standard sampling voltage value and the reference sampling voltage value to obtain the sampling voltage deviation value.

[0173] Step S952: Calculate the difference between the standard sampling current value and the reference sampling current value to obtain the sampling current deviation value.

[0174] Step S953: If the sampled voltage deviation is less than the voltage error threshold and the sampled current deviation is less than the current error threshold, it is determined that the standard measurement channel is working normally.

[0175] Step S954: If the sampled voltage deviation is greater than or equal to the voltage error threshold, or the sampled current deviation is greater than or equal to the current error threshold, it is determined that the standard measurement channel is malfunctioning.

[0176] In this embodiment, the sampling voltage deviation is obtained by subtracting the reference sampling voltage value from the standard sampling voltage value, and the sampling current deviation is obtained by subtracting the reference sampling current value from the standard sampling current value. When the sampling voltage deviation is less than the voltage error threshold and the sampling current deviation is less than the current error threshold, it indicates that the current and voltage values ​​obtained by sampling through the standard measurement channel are within the preset error range, and the standard measurement channel is determined to be working normally. When the sampling voltage deviation is greater than or equal to the voltage error threshold, or the sampling current deviation is greater than or equal to the current error threshold, it indicates that the current and voltage values ​​obtained by sampling through the standard measurement channel are within the preset error range, and the standard measurement channel is determined to be malfunctioning.

[0177] In some embodiments, after determining that the standard measurement channel is malfunctioning, different measures can be taken depending on the magnitude of the sampling voltage deviation and sampling current deviation. For example, when the sampling voltage deviation and sampling current deviation are small, the voltage calibration coefficient and current calibration coefficient are adjusted so that the calibrated voltage and current measurements are within a preset error range. In some embodiments, when the sampling voltage deviation and sampling current deviation are small, the system switches to the reference measurement channel to measure the current and voltage values ​​of the heating resistor.

[0178] In some embodiments, after determining that the standard measurement channel is malfunctioning, the temperature control method for the semiconductor chamber heater further includes steps S11 to S18.

[0179] Step S11: Adjust the voltage calibration coefficient and the current calibration coefficient.

[0180] Adjust the voltage calibration coefficient according to the magnitude and direction of the sampled voltage deviation, and adjust the current calibration coefficient according to the magnitude and direction of the sampled current deviation.

[0181] Step S12: Sample the reference voltage signal again through the standard measurement channel and the reference measurement channel to obtain the first sampled voltage value and the second sampled voltage value.

[0182] In this embodiment, the first sampled voltage value is the voltage value obtained by calibrating the initial voltage value sampled from the standard measurement channel based on the adjusted voltage calibration coefficient.

[0183] Specifically, the reference voltage signal is sampled through the standard measurement channel and the reference measurement channel under the reference voltage gain range to obtain the first initial voltage value and the second sampled voltage value. Based on the adjusted voltage calibration coefficient corresponding to the reference voltage gain range, the first initial voltage value is calculated and calibrated to obtain the calibrated first sampled voltage value.

[0184] Step S13: Sample the reference current signal again through the standard measurement channel and the reference measurement channel to obtain the first sampled current value and the second sampled current value.

[0185] In this embodiment, the first sampling current value is the current value obtained by calibrating the initial current value of the standard measurement channel based on the adjusted current calibration coefficient.

[0186] Specifically, the reference current signal is sampled through the standard measurement channel and the reference measurement channel under the reference current measurement range to obtain the first initial current value and the second sampled current value. Based on the adjusted current calibration coefficient corresponding to the first initial current value, the first initial current value is calculated and calibrated to obtain the calibrated first sampled current value.

[0187] Step S14: Calculate the difference between the first sampled voltage value and the second sampled voltage value to obtain the sampled voltage error value.

[0188] Step S15: Calculate the difference between the first sampled current value and the second sampled current value to obtain the sampled current error value.

[0189] In this embodiment, the sampling voltage error value is obtained by subtracting the second sampling voltage value from the first sampling voltage value, and the sampling current error value is obtained by subtracting the second sampling current value from the first sampling current value.

[0190] Step S16: Compare the sampled voltage error value with the voltage error threshold and the sampled current error value with the current error threshold to obtain the comparison result.

[0191] Step S17: Based on the comparison results, determine whether the standard measurement channel is working properly.

[0192] Step S18: Repeat steps S11 to S17 until the sampled voltage error value is less than the voltage error threshold and the sampled current error value is less than the current error threshold, thus confirming that the standard measurement channel is working normally.

[0193] For example, the sampled voltage error value is compared with the voltage error threshold, and the sampled current error value is compared with the current error threshold. If the comparison result is that the sampled voltage error value is greater than or equal to the voltage error threshold, or the sampled current error value is greater than or equal to the current error threshold, it is determined that the standard measurement channel is malfunctioning. The voltage calibration coefficient and the current calibration coefficient are adjusted, and the voltage and current values ​​are obtained by sampling through the standard measurement on / off and the reference measurement channel. The sampled voltage error value and the sampled current error value are calculated, and the sampled voltage error value is compared with the voltage error threshold, and the sampled current error value is compared with the current error threshold, until the sampled voltage error value is less than the voltage error threshold and the sampled current error value is less than the current error threshold. At this point, it is determined that the standard measurement channel is working normally, and the adjustment of the voltage calibration coefficient and the current calibration coefficient is stopped. The voltage calibration coefficient and the current calibration coefficient after the last adjustment are taken as the voltage calibration coefficient of the standard test channel under the reference voltage gain range and the current calibration coefficient under the reference current measurement range.

[0194] In some embodiments, after determining that the standard measurement channel is malfunctioning, the temperature control method for the semiconductor chamber heater further includes step S101.

[0195] Step S101: If the sampled voltage deviation value is greater than or equal to the maximum voltage error threshold, and / or the sampled current deviation value is greater than or equal to the maximum current error threshold, enable the backup sampling module to perform voltage and current sampling on the heating resistor.

[0196] In this embodiment, the maximum voltage error threshold is greater than the voltage error threshold, and the maximum current error threshold is greater than the current error threshold.

[0197] In this step, when the sampled voltage deviation is greater than or equal to the maximum voltage error threshold, and / or the sampled current deviation is greater than or equal to the maximum current error threshold, it means that accurate voltage and current measurements cannot be obtained by adjusting the voltage and current calibration coefficients. In this case, the standard sampling module is abandoned or turned off, and the backup sampling module is enabled to sample the voltage and current of the heating resistor.

[0198] In summary, the temperature control method for a semiconductor chamber heater provided in this application includes a heating resistor electrically connected to a standard sampling module equipped with a standard measurement channel. The standard measurement channel has multiple voltage gain ranges. This application utilizes candidate voltage calibration coefficients corresponding to candidate voltage gain ranges to calibrate and calculate the precise voltage measurement value of the heating resistor, and utilizes current calibration coefficients corresponding to candidate current code values ​​to calibrate and calculate the precise current measurement value of the heating resistor. Thus, a precise reference resistance value of the heating resistor is calculated based on the voltage and current measurement values, thereby enabling the precise reference temperature value of the heating resistor to be obtained based on the reference resistance value. This allows for precise adjustment of the heating power of the heating resistor, improving the accuracy and stability of the heating resistor temperature measurement, and achieving precise temperature control of the heating resistor.

[0199] This application provides a computer-readable storage medium storing processor-executable computer program instructions. When executed by a processor, the computer program instructions cause the computer to perform any of the temperature control methods for semiconductor chamber heaters provided in this application, or to perform steps in any possible implementation of any of the temperature control methods for semiconductor chamber heaters provided in this application.

[0200] Those skilled in the art will understand that the embodiments provided in this application are merely illustrative. The order in which the steps in the methods of the embodiments are written does not imply a strict execution order and does not constitute any limitation on the implementation process. The order can be adjusted, merged, and deleted according to actual needs. Modules or sub-modules, units or sub-units in the apparatus or system of the embodiments can be merged, divided, and deleted according to actual needs. For example, the division of units is only a logical functional division, and there may be other division methods in actual implementation. For another example, multiple units or components can be combined or integrated into another device, or some features can be ignored or not executed.

[0201] Through the above description of the embodiments, those skilled in the art will clearly understand that each embodiment can be implemented using software plus a general-purpose hardware platform, and of course, it can also be implemented using hardware. Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. This computer program can be stored in a computer-readable storage medium, and when executed, it can include the processes of the embodiments of the above methods. It should be understood that the storage medium can be flash memory, hard disk, optical disk, register, magnetic surface memory, removable disk, CD-ROM, random access memory (RAM), read-only memory (ROM), electrically programmable ROM, and electrically erasable programmable ROM, etc.

[0202] It should be noted that the above embodiments are for illustrating the technical concept and features of this application, and are intended to enable those skilled in the art to understand the content of this application and implement it accordingly. They should not be construed as limiting the scope of protection of this application. Those skilled in the art can understand that all or part of the processes of the above embodiments can be implemented, modified according to the technical solutions described in the embodiments of this application, or equivalent substitutions can be made to some of the technical features. It is understood that these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application, and should be considered as equivalent changes and modifications made based on the embodiments of this application, all of which should fall within the scope of the claims of this application.

Claims

1. A temperature control method for a semiconductor chamber heater, characterized in that, The heater includes a heating resistor, which is electrically connected to a standard sampling module equipped with a standard measurement channel, the standard measurement channel having multiple voltage gain ranges; The method includes: The candidate voltage code value and candidate current code value of the heating resistor are obtained. The candidate voltage code value is obtained by the standard sampling module through the standard measurement channel to sample the voltage of the heating resistor under the candidate voltage gain range. The candidate current code value is obtained by the standard sampling module through the standard measurement channel to sample the current of the heating resistor. The candidate voltage gain range is any one of a plurality of voltage gain ranges, and each voltage gain range corresponds to a voltage calibration coefficient. The voltage measurement value of the heating resistor is calculated based on the candidate voltage code value and the candidate voltage calibration coefficient corresponding to the candidate voltage gain range. Based on the candidate current code value and the current calibration data, the current measurement value of the heating resistor is calculated, and the current calibration data represents the current calibration coefficient corresponding to the candidate current code value. Divide the voltage measurement value by the current measurement value to obtain the reference resistance value of the heating resistor; Based on the reference resistance value and the temperature resistance curve of the heating resistor, a reference temperature value of the heating resistor is obtained. The temperature resistance curve is used to characterize the relationship between the resistance and temperature of the heating resistor. The heating power of the heating resistor is adjusted based on the reference temperature value.

2. The method according to claim 1, characterized in that, The step of calculating the voltage measurement value of the heating resistor based on the candidate voltage code value and the candidate voltage calibration coefficient corresponding to the candidate voltage gain range includes: The candidate voltage estimate of the heating resistor is calculated based on the candidate voltage code value and the candidate voltage calibration coefficient. In response to the candidate voltage estimate being greater than or equal to a first voltage threshold and less than or equal to a second voltage threshold, the candidate voltage estimate is filtered in steady-state filtering mode to obtain the voltage measurement value. The first voltage threshold is the product of the upper limit of the candidate voltage gain range and a first preset value, and the second voltage threshold is the product of the upper limit of the candidate voltage gain range and a second preset value.

3. The method according to claim 2, characterized in that, The step of calculating the voltage measurement value of the heating resistor based on the candidate voltage code value and the candidate voltage calibration coefficient corresponding to the candidate voltage gain range further includes: In response to the candidate voltage estimate being less than the first voltage threshold, the standard sampling module is switched to the first voltage gain range, so that the standard sampling module performs voltage sampling on the heating resistor under the first voltage gain range to obtain the first voltage code value, and calculates the first voltage estimate of the heating resistor based on the first voltage code value and the first voltage calibration coefficient corresponding to the first voltage gain range. Switch to transient filtering mode, and filter the first voltage estimate in transient filtering mode to obtain the first voltage filtered value; In response to the first voltage filter value being greater than or equal to the first voltage threshold and less than or equal to the second voltage threshold, the system switches to the steady-state filtering mode, and filters the first voltage filter value in the steady-state filtering mode to obtain the voltage measurement value of the heating resistor. Wherein, the accuracy of the least significant bit of the first voltage gain range is greater than the accuracy of the least significant bit of the candidate voltage gain range.

4. The method according to claim 2, characterized in that, The step of calculating the voltage measurement value of the heating resistor based on the candidate voltage code value and the candidate voltage calibration coefficient corresponding to the candidate voltage gain range further includes: In response to the candidate voltage estimate being greater than the second voltage threshold, the standard sampling module is switched to the second voltage gain range, so that the standard sampling module performs voltage sampling on the heating resistor under the second voltage gain range to obtain the second voltage code value, and calculates the second voltage estimate of the heating resistor based on the second voltage code value and the second voltage calibration coefficient corresponding to the second voltage gain range. Switch to transient filtering mode, and filter the second voltage estimate in transient filtering mode to obtain the second voltage filtered value; In response to the second voltage filter value being greater than or equal to the first voltage threshold and less than or equal to the second voltage threshold, the system switches to the steady-state filtering mode, and filters the second voltage filter value in the steady-state filtering mode to obtain the voltage measurement value of the heating resistor. The accuracy of the least significant bit of the second voltage gain range is less than the accuracy of the least significant bit of the candidate voltage gain range.

5. The method according to any one of claims 2-4, characterized in that, The candidate voltage calibration coefficient includes a voltage deviation ratio and a voltage bias parameter. The step of calculating the candidate voltage estimate of the heating resistor based on the candidate voltage code value and the candidate voltage calibration coefficient includes: Determine the unit voltage value of the candidate voltage gain range, wherein the unit voltage value is the voltage value corresponding to a voltage code value of the standard sampling module under the candidate voltage gain range; Multiply the candidate voltage code value by the unit voltage value to obtain the first voltage value; Multiply the first voltage value by the voltage deviation ratio to obtain the second voltage value; The second voltage value is added to the voltage bias parameter to obtain the candidate voltage estimate.

6. The method according to claim 1, characterized in that, The current calibration data includes a temperature range, a current range, and current calibration coefficients corresponding to the temperature range and the current range. The standard sampling module includes a current sampling resistor. The calculation of the current measurement value of the heating resistor based on the candidate current code value and the current calibration data includes: Calculate the first current value of the heating resistor based on the candidate current code value; Obtain the temperature value of the current sampling resistor; The reference current calibration coefficients corresponding to the reference temperature range and reference current range in the current calibration data are determined as reference current calibration coefficients. The reference temperature range is the temperature range in which the temperature value of the current sampling resistor is located, and the reference current range is the current range in which the first current value is located. The first current value is calibrated according to the reference current calibration coefficient to obtain the current measurement value.

7. The method according to any one of claims 1-4, characterized in that, The standard sampling module is further configured with a reference measurement channel, which is a measurement channel equipped with measurement components whose measurement accuracy meets preset accuracy conditions and whose measurement values ​​meet preset stability conditions. The method further includes: The standard measurement channel and the reference measurement channel are electrically connected to a reference voltage source, and the standard measurement channel and the reference measurement channel are electrically connected to a reference current source; Control the reference voltage source to output a reference voltage signal, and control the reference current source to output a reference current signal; The reference voltage signal is sampled through the standard measurement channel and the reference measurement channel respectively to obtain a standard sampled voltage value and a reference sampled voltage value. The standard sampled voltage value is a voltage value obtained by calibrating the original voltage value sampled by the standard measurement channel based on the voltage calibration coefficient. The reference current signal is sampled through the standard measurement channel and the reference measurement channel respectively to obtain a standard sampled current value and a reference sampled current value. The standard sampled current value is a current value obtained by calibrating the original current value sampled by the standard measurement channel based on the current calibration coefficient. Based on the standard sampling voltage value, the reference sampling voltage value, the standard sampling current value, and the reference sampling current value, determine whether the standard measurement channel is working properly.

8. The method according to claim 7, characterized in that, The step of determining whether the standard measurement channel is working properly based on the standard sampling voltage value, the reference sampling voltage value, the standard sampling current value, and the reference sampling current value includes: The difference between the standard sampled voltage value and the reference sampled voltage value is calculated to obtain the sampled voltage deviation value; The difference between the standard sampling current value and the reference sampling current value is calculated to obtain the sampling current deviation value; If the sampled voltage deviation is less than the voltage error threshold and the sampled current deviation is less than the current error threshold, it is determined that the standard measurement channel is working normally. If the sampled voltage deviation is greater than or equal to the voltage error threshold, or if the sampled current deviation is greater than or equal to the current error threshold, it is determined that the standard measurement channel is malfunctioning.

9. A temperature control system, characterized in that, include: The system includes a controller, a heater, and a standard sampling module. The heater includes a heating resistor. The controller is communicatively connected to the standard sampling module, and the standard sampling module is electrically connected to the heating resistor. The standard sampling module is configured with a standard measurement channel and a reference measurement channel. Both the standard measurement channel and the reference measurement channel are equipped with multiple voltage gain ranges. The reference measurement channel is a measurement channel equipped with measurement components whose measurement accuracy meets preset accuracy conditions and whose measurement values ​​meet preset stability conditions. The controller includes: A processor and a memory communicatively connected to the processor; The memory stores computer program instructions executable by the processor, which, when executed by the processor, cause the controller to perform the temperature control method for a semiconductor chamber heater as described in any one of claims 1-8.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores processor-executable computer program instructions, which, when executed by the processor, cause the computer to perform the temperature control method for a semiconductor chamber heater as described in any one of claims 1-8.

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