Method for producing a MEMS assembly, in particular a micromirror assembly

Abstract

The invention relates to a method for producing a MEMS assembly, in particular a micromirror assembly (10) having a number of separate individual mirrors (20, 44, 46) that are movable relative to one another, the method comprising the following method steps: a) processing the micromirror assembly (10) as a functional structure arrangement such that, when structures (22, 32, 36, 52) in the material (24) of the functional structure arrangement are exposed, interrupter or shading structures (26) are produced in trenches (38) separating the individual mirrors (20, 44, 46), which interrupter or shading structures have regions (70) that are shaded against a deposition gas or deposition plasma (64) for depositing an electrically conductive mirror coating (14), b) providing the micromirror assembly (10) processed according to method step a) and depositing the electrically conductive mirror coating (14) as a Bragg stack (16) by means of an applied deposition gas or deposition plasma (64) on previously exposed mirror plates (32) of the individual mirrors (20, 44, 46) such that c) the shaded regions (70) of the interrupter or shading structures (26) produce an interruption in the electrically conductive deposited mirror coating (14) for potential separation (92). The invention further relates to the use of the method for producing a MEMS assembly, in particular a micromirror assembly (10).

Description

[0001] R.416727

[0002] - 1 -

[0003] Description

[0004] title

[0005] Method for manufacturing a MEMS assembly, in particular a micromirror assembly

[0006] Technical field

[0007] The invention relates to a method for manufacturing a MEMS assembly, in particular a micromirror assembly, comprising a number of separate, movable individual mirrors. Furthermore, the invention relates to a micromirror assembly with a base plate, at least one mirror plate, at least one electrode structure, and at least one optionally provided top plate, and to the use of the method for manufacturing a MEMS assembly, in particular a micromirror assembly.

[0008] State of the art

[0009] DE 102013 201 506 A1 relates to an optical component with a mirror pattern comprising a number of mirror elements, each of which has at least one degree of freedom and each of which is connected to at least one actuator for movement. It further comprises a number of local control devices for damping vibrations of the mirror elements. Each of the control devices has at least one capacitive sensor with at least one movable electrode and at least one electrode rigidly arranged relative to the support structure.

[0010] US 2022 / 204338 A1 relates to a device and a method for manufacturing MEMS structures that minimize deflection during temperature changes due to differing coefficients of thermal expansion of individual layers of the MEMS structures. The method shows how a compensating reflective coating on the underside of a suspended MEMS (R.416727) is applied.

[0011] - 2 -

[0012] A structure is formed to compensate for the deflection by means of a reflective coating on the top surface of the suspended MEMS structure. The reflective coating can be either reflective or non-reflective (antireflective). In the method proposed here, a cavity is formed on a first wafer, the compensating reflective layer is formed on a second wafer substrate, which is positioned relative to the suspended MEMS structure, the second wafer is flipped over, and the two wafers are joined together.

[0013] CA 2726409 A1 relates to a multi-layered hidden hinge and actuator structure for a biaxial MEMS mirror matrix with a high fill factor for a wavelength-selective switch based on a silicon-on-insulator process with wafer bonding and orthogonal, approximately aligned comb and / or parallel plate actuators.

[0014] In lithography systems, the shortest possible wavelength is used for exposure to achieve the highest possible resolution. The highest-resolution lithography systems now use light in the EUV range (EUV = extreme ultraviolet). In such EUV lithography systems, Bragg mirrors are used to deflect the EUV light.

[0015] Generating EUV radiation is a very costly process, and the throughput, i.e., the number of wafers exposed per unit of time, should be as high as possible. This necessitates the most efficient use of EUV light within the lithography system. Static EUV mirrors reach their limits in this regard. A more advantageous approach is to use adjustable EUV mirrors that deflect the EUV light to the most efficient location, depending on the application. One way to manufacture such adjustable EUV mirrors is by using adjacent micromirrors. In this case, each micromirror represents a pixel, and the entire EUV mirror consists of individual pixels, i.e., micromirrors, all of which can be controlled and tilted independently.

[0016] Micro Mirror Units (MMUs) comprise at least one Micro Mirror Array (MMA) on their surfaces. This MMA is a MEMS system, essentially made of silicon, which contains a multitude of small tiltable R.416727

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[0018] Micromirrors are included. Such micromirrors are coated on their surface with a Bragg layer stack so that they can reflect EUV light.

[0019] The integration of the EUV Bragg layer stack can be achieved in two ways: firstly, by integrating it during the MMA fabrication process, i.e., during the MEMS manufacturing process at the wafer level; and secondly, by depositing the EUV Bragg layer stack later, after the MMAs have already been integrated on the MMU, i.e., no longer at the wafer level, but within the MMU process. Both options have disadvantages. The first option has the disadvantage that, if the EUV Bragg layer stack is integrated during the MEMS manufacturing process, it must withstand the entire subsequent process without degradation. However, there is a risk that subsequent process influences, such as higher temperatures, mechanical contact, particles, chemical etching, physical etching, or inorganic or organic contamination, could reduce the quality of the Bragg mirroring.This would impair, as it would reduce, the final reflectivity of the finished MMU.

[0020] In the alternative design variant, where the Bragg layer stack is deposited during or at the end of the MMU process, it tends to be deposited across the entire surface of the already exposed, i.e., movable, MMA. In this case, the Bragg layer stack, or parts or material components thereof, end up not only on the micromirror surfaces intended for coating, but also unintentionally in areas adjacent to the micromirrors, i.e., in the gaps or grooves, particularly on the electrodes of the MEMS core. Since microelectromechanical structures (MEMS) are electrostatically driven micromirrors, this Bragg layer stack, or its material components, deposited parasitically in the individual gaps or grooves, could electrically connect or short-circuit the respective MEMS cores.In this process, both the potentials within a single micromirror and the neighboring micromirrors can be electrically connected or short-circuited. The Bragg layer stack typically comprises an electrically conductive multistack of molybdenum and silicon layers. (R.416727.)

[0021] - 4 -

[0022] If the electrodes in the ME MS core are electrically connected or short-circuited, the micromirror can no longer be tilted in a controlled manner and neighboring micromirrors can no longer be individually controlled, which would lead to the failure of the entire MMA and thus the entire MMU.

[0023] Disclosure of the invention

[0024] According to the invention, a method for manufacturing a MEMS assembly, in particular a micromirror assembly with a number of separate, relative-to-each-other movable individual mirrors, is proposed, comprising the following process steps:

[0025] a) Processing of the micromirror assembly as a functional structure arrangement such that, in the case of the release of structures in the material of the functional structure arrangement in structures or areas or trenches separating individual mirrors, interrupting or shading structures are provided which have shaded areas or with which shaded areas are created in which, at least in some areas, no material of the electrically conductive layer or electrically conductive layer stack is deposited during the deposition of an electrically conductive layer or an electrically conductive layer stack.

[0026] b) Provision of the micromirror assembly processed according to process step a) and deposition of an electrically conductive layer or an electrically conductive layer stack by applying one or more deposition processes to previously exposed and freely movable mirror plates of the individual mirrors such that

[0027] c) the shaded areas in the region of the interrupting or shading structures cause an interruption of the deposited electrically conductive layer or electrically conductive layer stack, and electrical insulation or electrical separation / potential separation between adjacent potentials or potential ranges and / or electrically conductive structures can be maintained even after the deposition of the electrically conductive layer or electrically conductive layer stack. R.416727

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[0029] The solution proposed according to the invention allows an EUV mirror coating to be deposited as a Bragg layer stack during the production of a micromirror assembly, without electrically connecting or short-circuiting different electrical potentials or potential ranges of adjacent micromirrors or adjacent individual mirrors.

[0030] In an advantageous further development of the method proposed according to the invention, it is provided that during the release of the structures according to process step a), a base plate, at least one mirror plate, at least one electrode structure and optionally at least one top plate are produced.

[0031] The method proposed according to the invention is further characterized in that at least one freestanding or undercut structure is formed on the interrupting or shading structures produced according to method step a).

[0032] In an advantageous further development of the method proposed according to the invention, it is provided that the shaded areas produced according to process step a) are formed at least in the area of ​​one side facing the base plate of a freestanding structure of an interrupter or shading structure.

[0033] Advantageously, the method proposed according to the invention provides that the EUV mirror coating comprising a multilayer arrangement of a Bragg layer stack is deposited by applying one or more PVD deposition processes, in particular sputtering processes.

[0034] In the method proposed according to the invention, it is further provided that the Bragg layer stack is formed as a plurality of molybdenum and silicon layers or molybdenum and silicon layers.

[0035] In a further development of the method proposed according to the invention, the interrupting or shading structures in a plane perpendicular to a surface having an EUV mirror coating have a cross-section in the shape of a T-beam and / or L-beam. R.416727

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[0037] Furthermore, the method proposed according to the invention offers the possibility of structuring the interrupting or shading structures in a plane and / or perpendicular to it in meandering, spiral or labyrinthine form.

[0038] The method proposed according to the invention advantageously enables the electrical separation of at least two adjacent potentials or potential ranges to be maintained even after the deposition of the electrically conductive EUV coating by means of the interrupter or shading structure(s) formed perpendicular to the surface having an EUV mirror coating in T-bar and / or L-bar shape, thereby ensuring, for example, that the first to fourth quadrant potentials Qi to Q4 and / or the first to fourth quadrant potentials Q'i to Q'4 within a first and / or a second individual mirror are reliably electrically separated from one another. This advantageously prevents short circuits within the individual mirrors.

[0039] Advantageously, the method proposed according to the invention can be implemented such that the interrupting or shading structures in T-bar and / or L-bar form can maintain electrical insulation or potential separation between adjacent first and second individual mirrors. This advantageously prevents the formation of electrically conductive connections or short circuits between them due to deposited electrically conductive material, so that each individual mirror can be electrically controlled and deflected in a defined manner and the micromirror assembly remains functional.

[0040] In the method proposed according to the invention, it is further provided that the interrupting or shading structures are formed in the material, in particular from electrically conductive silicon material of the micromirror assembly, and that electrical isolation or potential separation between adjacent individual mirrors is carried out by means of a first insulation, in particular SiO2, and / or a second insulation, in particular SiN. R.416727

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[0042] Furthermore, the method proposed according to the invention advantageously provides that the shaded areas on the interrupting or shading structures are enlarged by means of skirt-shaped shading structures. The further the skirt-shaped shading structures extend towards the base plate, the larger the shaded areas in the region of the interrupting or shading structures can be, so that at least locally an interruption of the electrically conductive, for example, EUV mirror coating applied by a sputtering process, can be achieved with the greatest possible certainty.

[0043] Furthermore, in the method proposed according to the invention, the interrupter or shading structures are made of electrically conductive silicon material in a widened T-shape with a potential separation that is essentially free of an insulating layer.

[0044] In a further development of the method proposed according to the invention, the interrupting or shading structures can be designed as partitions serving as electrostatic shielding. This allows for dual functionality.

[0045] In a further development of the method proposed according to the invention, it is provided that interrupter or shading structures, designed in T-bar and / or L-bar form, are implemented in the area of ​​the base plate of the micromirror assembly designed as a functional structure arrangement. This advantageously offers the possibility of arranging the interrupter or shading structures where they are as far away as possible from the deflection or tilting movements of the micromirrors and cannot influence them.

[0046] Furthermore, the method proposed according to the invention provides that the interrupting or shading structures, with respect to a central axis between potentials to be separated, in particular individual mirrors, are designed as first decentrally arranged interrupting or shading structures or as first and second decentralized interrupting or shading structures on the base plate. Such a design of the interrupting or shading structures saves installation space and also represents a R.416727

[0047] - 8 -

[0048] represents a safe alternative to interrupting the electrically conductive EUV mirror coating.

[0049] Furthermore, the method proposed according to the invention provides that the interrupting or shading structures, designed in T-bar shape and / or in L-bar shape, can be implemented in a stacked arrangement and / or in a side-by-side arrangement and / or in a serial arrangement in the material, in particular in the electrically conductive silicon material, of the micromirror assembly designed as a functional structure arrangement.

[0050] Furthermore, the invention relates to a micromirror assembly with a base plate having at least one mirror plate, at least one electrode structure and optionally at least one top plate, wherein the micromirror assembly comprises a number of individual mirrors separated from one another by structures, areas or trenches, the individual mirrors comprising an electrically conductive EUV mirror coating deposited, for example, by a PVD process, which is interrupted in the structures, areas or trenches separating the individual mirrors by interrupting or shading structures, wherein the interrupting or shading structures have at least partially shaded areas in the region of the side of freestanding structures facing the base plate, in which no material of the EUV mirror coating is deposited during the deposition of the electrically conductive EUV mirror coating.

[0051] Finally, the invention relates to the use of the method for manufacturing a MEMS assembly, in particular a micromirror assembly.

[0052] Advantages of the invention

[0053] The solution proposed according to the invention advantageously makes it possible to deposit the Bragg layer stack representing the EUV mirroring only after the movable MEMS structures have been isolated, ensuring that electrical isolation or electrical potential separation is maintained between at least two different electrical potentials or potential ranges in the area of ​​a single mirror structure and R.416727

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[0055] can be maintained between adjacent and relative movable individual mirrors without creating an electrically conductive connection and / or an electrical short circuit between adjacent potentials and individual mirrors.

[0056] In the manufacturing process proposed according to the invention, structures are integrated, in particular interrupting or shading structures, which can locally and precisely interrupt the EUV mirror coating deposited, for example, by a PVD process, especially the multilayer Bragg layer stack. By forming these precisely defined local interruptions within the sputtered, electrically conductive Bragg layer stack forming an EUV mirror coating, different electrical potentials can remain electrically separated from each other even after the deposition of the EUV mirror coating.Interruption or shading structures of all kinds can be used, as long as the following requirements are met: The interruption or shading structures have a shape in which at least in some areas at least a self-supporting sub-area is formed, aligned parallel to the surface of the base plate, which results in an electrically interrupted electrically conductive EUV mirror coating being applied at least on the surface of the self-supporting sub-area facing the base plate due to shading, so that even after the electrically conductive EUV mirror coating has been applied, an electrical separation of adjacent potentials can still be maintained.

[0057] Advantageously, for example, additional apron-like shading structures can be arranged between freestanding and parallel-to-the-surface sections of interrupting or shading structures and the base plate, and these apron-like structures are attached to cantilevered sections of interrupting or shading structures that are parallel to the surface of the base plate. This extension of the uncoated or shaded areas can thus achieve a larger interruption of the applied EUV mirror coating. R.416727

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[0059] The EUV mirror coating is a very complex and sensitive layer that must not be affected or even destroyed by subsequent processes after its application. If the mirror coating were integrated earlier in the process, for example in the MEMS process, the subsequent MEMS process and the MMU assembly process would pose a risk of damaging or even destroying the already integrated, sensitive EUV mirror coating. Therefore, it is desirable to integrate the layer relatively late, towards the end of the MMU process. However, in this case, the individual mirrors would already be exposed, and the problem would arise that the EUV layer could generate short circuits. The solution proposed according to the invention solves this problem by integrating the EUV layer at the end, thus preventing it from being destroyed by subsequent process steps.

[0060] Brief description of the drawings

[0061] Embodiments of the invention are explained in more detail with reference to the drawings and the following description.

[0062] They show:

[0063] Figure 1 shows a top view of a micromirror array with a number of individual mirrors,

[0064] Figure 2 is a top view of the representation according to Figure 1, i.e. a micromirror field with a cross-sectional profile.

[0065] Figure 3 shows a cross-sectional view of the functional structures of a MEMS assembly, including a gap or trench in which electrically conductive material of an EUV mirror coating can be deposited.

[0066] Figures 4 and 5 show a schematic representation of undercut edges with different gap or trench geometries.

[0067] Figure 6 shows a schematic representation of an interruption or shadowing structure in a cross-sectional view, arranged within an R.416727

[0068] - 11 -

[0069] Trench structure between two adjacent single mirrors,

[0070] Figures 6.1 and 6.2 show design variants of the interrupter in T-beam and L-beam shapes respectively in a cross-sectional view.

[0071] Figure 7 shows a top view of adjacent individual mirrors of a micromirror assembly with interruption or shading structures designed as T-bars.

[0072] Figure 8 shows a representation of an interruptor or shading structure in L-bar form with skirt-shaped shading structures in a cross-sectional view.

[0073] Figure 9 shows a variant embodiment of the interrupter or shading structure in T-beam form, in which a skirt-shaped shading structure is arranged on each of two free-standing areas of the T-shaped structure.

[0074] Figure 10 shows a cross-sectional view of a meandering interruption or shadowing structure.

[0075] Figure 11 shows a cross-sectional view of a variant of an interrupter or shading structure in spiral or labyrinth form.

[0076] Figure 12 shows a cross-sectional view of a variant of an interrupter or shading structure in a widened T-bar shape.

[0077] Figure 13 shows a cross-sectional view of a widened interrupter or shading structure for forming a wall-shaped electrostatic shielding structure.

[0078] Figure 14 shows a cross-sectional view of a T-shaped interrupter or shadowing structure within a trench structure between two adjacent single-mirror structures, R.416727

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[0080] Figure 15 shows the embodiment of an interrupter or shading structure, embedded in the base plate of the functional structure arrangement within a trench structure between two adjacent single mirror structures in a sectional view.

[0081] Figure 16 shows a breaker or shading structure, designed as two adjacent L-shaped beams with a centrally arranged breaker in the shape of a T-beam,

[0082] Figure 17 shows an interruption or shading structure, designed as an L-shaped interruption or shading structure arranged decentrally in edge areas.

[0083] Figure 18 shows a cross-sectional view of two oppositely arranged, decentralized interruption or shading structures flanking a trench structure, each designed in L-beam form.

[0084] Figure 19 shows a variant embodiment of the representation according to Figure 18 with two oppositely arranged, decentralized interruption or shading structures formed in edge areas, designed in L-beam form in conjunction with a deep and narrow gap structure separating the interruption or shading structures and provided at least in some areas, in a sectional view.

[0085] Figure 20 shows a variant embodiment with a combination of interrupter or shading structures arranged side by side and one above the other in a sectional view.

[0086] Figure 21 shows the embodiment variant of two opposing interrupter or shading structures in L-beam shape with an interrupter in T-beam shape arranged centrally between them in sectional view and R.416727

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[0088] Figure 22 shows a modification of the representation according to Figure 20 with electrical potential separation within the electrically conductive material of the base plate of the functional structure arrangement.

[0089] Embodiments of the invention

[0090] In the following description of embodiments of the invention, identical or similar elements are designated by the same reference numerals, and repeated descriptions of these elements are omitted in individual cases. The figures represent the subject matter of the invention only schematically.

[0091] Figure 1 schematically shows a micromirror assembly 10 comprising a number of adjacent and preferably identically constructed individual mirrors 20. These are arranged, for example, in arrays of 6 x 6 individual mirrors 20. An entire assembly can, for example, have the arrangement of individual mirrors 20 shown in Figure 1 in a grid of 24 x 24 individual mirrors 20.

[0092] After deposition of the EUV coating 14, the completed assemblies, which are produced in parallel on a substrate, for example on a silicon substrate or silicon wafer, are separated so that, as shown in Figure 1, individual assemblies with raster-arranged individual mirrors 20 are formed. The EUV coating 14 on the assemblies is applied, for example, by a PVD process, preferably by a sputtering process, to the micromirror assembly 10. The EUV coating 14 is a Bragg layer stack 16 whose reflection properties are tailored to the EUV radiation used.The Bragg layer stack 16 forming an EUV mirror coating 14 comprises the deposition of a multilayer arrangement 18 of molybdenum and silicon layers or tantalum / zirconium layers, wherein a cover layer may optionally be provided on the multilayer arrangement 18 and / or wherein an adhesive layer may optionally be provided between the multilayer arrangement 18 and a mirror plate 32. With the aid of such a Bragg layer stack 16, deposited within the framework of an EUV mirror coating 14, a particularly high reflectivity for radiation in the EUV range can be achieved. Since the EUV mirror coating 14 can be an electrically conductive coating, R.416727.

[0093] - 14 -

[0094] The resulting Bragg layer stack 16 can also be electrically conductive. If the Bragg layer stack 16 is deposited using a PVD sputtering process, material from the Bragg layer stack 16 is also deposited / applied / deposited in the area of ​​the trenches 38 arranged between individual mirrors 20. Since the individual mirrors 20, as shown in Figures 1 and 2, must be independently operable and tiltable for targeted beam shaping, the individual mirrors 20 are separated from each other by slits or trenches 38 to enable collision-free, independent movement of the individual mirrors 20.

[0095] This can also be seen in the illustration according to Figure 3, where a first single mirror 44 and a second single mirror 46 arranged next to it are shown schematically. The first single mirror 44 and the second single mirror 46 are separated from each other by a trench 38 extending into the plane of the drawing according to Figure 3.

[0096] As shown in Figure 3, the EUV mirror coating 14, which is applied by means of a PVD sputtering process (see reference numeral 64), is deposited not only on the mirror plates 32 of the first individual mirror 44 and the second individual mirror 46, but also at least on the bottom of the trench 38. Thus, when applied to the mirror plates 32, forming the Bragg layer stack 16, the EUV mirror coating 14 is deposited not only on these plates, but also in the trenches 38, particularly on their bottoms. If the EUV mirror coating 14 is electrically conductive, material of the Bragg layer stack 16 deposited in the trenches 38, for example the electrical potentials arranged next to each other in Figure 3, namely a second potential Gh 44.2 of the first single mirror 44 with the adjacent first potential Q'i 46.1 of the second single mirror 46, can electrically connect or short-circuit them.In the worst case, this leads to the failure of the micromirror assembly 10 shown in Figure 3. For the sake of completeness, it should be mentioned that the micromirror assembly 10 consists essentially of electrically conductive silicon material 24 and is formed into the shape shown in Figure 3 using various manufacturing processes. This results in mirror plates 32 separated by the groove 38 and to be coated with the EUV mirror coating 14, wherein the mirror plates 32 of the first individual mirror 44 and the second individual mirror 46 are joined at joints 34 on the upper side of a top plate R.416727, facing away from the base plate 22.

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[0098] 52 are mounted. Between the top plate 52 and the top of the base plate 22 extends an electrode structure 36, which is only shown schematically in the sectional view according to Figure 4 and in the further representations of the functional structure arrangement. On the side of the electrode structure 36 facing away from the mirror plate 32 is the base plate 22, in particular made of electrically conductive material, such as electrically conductive silicon 24.

[0099] On the side of the base plate 22 facing away from a mirror plate 32, or on the underside of the base plate 22 opposite the top surface, there is a second insulating layer 30, for example formed by a silicon nitride coating. A second insulating layer of silicon nitride also extends across the top surface of the base plate 22. Between this and the base plate 22, in or on the electrically conductive silicon material 24 of the base plate 22, there is a first insulating layer 28, formed of silicon oxide. As shown in Figure 3, the sputtering material 40, which has penetrated the groove 38 between two adjacent individual mirrors 20, causes an electrical connection or short circuit 50 between the individual mirrors 20.On the top side of the base plate 22 there is a first electrical insulation layer 28 made of SiO2, on which electrodes made of polysilicon are provided, on which in turn a second electrical insulation layer 30 made of SiN is provided.

[0100] Based on the schematic representations in Figures 4 and 5, a shading effect to prevent an electrical connection or short circuit between adjacent electrical potentials and between adjacent individual mirrors 20 is described in more detail. Since the formation of an EUV mirror coating 14 comprises the deposition of an electrically conductive multilayer arrangement 18 to produce a Bragg layer stack 16 on the upper surfaces of the mirror plates 32, wherein the individual layers of the Bragg layer stack 16 or the EUV mirror coating 14 are applied by means of a PVD deposition process 64, material from the Bragg layer stack 16 or EUV mirror coating material inevitably enters the gap 38 between two adjacent individual mirror elements 20.Figures 4 and 5 show that structures with freestanding or undercut edges 56 can be used to create shading areas. The area, R.416727.

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[0102] The amount of sputtered material, in this case the EUV mirror material applied by means of a sputtering process, deposited below freestanding or undercut edges 56 on, for example, the top surface of the electrically conductive material 24, depends on a gap width 58, a gap height 60 and a distance 62 between a freestanding or undercut edge 56 and the top surface of the electrically conductive material, in this case the electrically conductive silicon material 24.

[0103] While in the illustration according to Figure 4, sputtering material 40 is deposited in a larger area below freestanding or undercut edges 56 on the top surface of an electrically conductive material 24, which at least partially contains EUV mirror material, this area is significantly smaller in the illustration according to Figure 5, since the gap width 58 of the gap 38 is smaller and / or the gap height 60 of the gap 38 is larger compared to the embodiment shown in Figure 4. Conversely, if the gap width 58 of the gap 38 is increased and / or the gap height 60 of the gap 38 is decreased, an even larger area below freestanding or undercut edges 56 of the sputtering material 40 can be deposited on the top surface of an electrically conductive material 24 compared to the embodiment shown in Figure 5.Furthermore, the size of the area below a freestanding or undercut edge 56, in which sputtering material 40 is deposited on a top surface of an electrically conductive material 24, depends on the distance 62 between a freestanding or undercut edge 56 and the top surface of the electrically conductive material 24. A larger distance 62 results in a larger area and a smaller distance 62 in a smaller area in which sputtering material 40 is deposited below freestanding or undercut edges 56 on a top surface of an electrically conductive material 24.

[0104] If the edges 56 are formed in an electrically conductive material, such as silicon, and their distance 62 to the top surface of an electrically conductive material 24 is defined by the thickness of an electrically insulating layer of, for example, silicon oxide, then it is advantageous if the silicon oxide-free area, starting from the R.416727

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[0106] Edge 56 is chosen to be larger than the area in which sputtering material 40 can be deposited. In this way, it can be avoided that electrically conductive sputtering material 40 can bridge the dielectric layer and form an electrically conductive connection or a short circuit between the electrically conductive layers 24 separated by the dielectric layer.

[0107] Figure 6 shows a cross-sectional view through two adjacent single mirrors 20. The representation in Figure 6 shows that an interrupter or shading structure 26 is arranged in the trench 38. In the representation in Figure 6, the interrupter or shading structure 26 has a T-beam shape 66 and is made, for example, of insulating silicon oxide. The interrupter or shading structure 26 shown in Figure 6 is connected to the first insulating layer 28 on the top surface of the base plate 22, in particular silicon oxide. The representation in Figure 6 shows that below the T-beam-shaped interrupter or shading structure 26, on the side facing the base plate 22 of the freestanding areas, for example, horizontal parts 72, two adjacent or opposite shading areas 70 are formed.In these, the electrically conductive EUV mirror coating 14, applied by means of a sputtering process 64, is interrupted. That is, at these points there is an electrical break which prevents different electrical potentials from being electrically connected or short-circuited between adjacent or neighboring structures, namely the first single mirror 44 and the second single mirror 46 arranged adjacent to it, during the deposition of an electrically conductive Bragg layer stack 16 to produce an EUV mirror coating 14. Analogous to the representation in Figure 3, the MMA assembly 10 is designed as a functional structure arrangement and, in addition to the base plate 22 and the electrode structures 36 of the tiltable top plate 52, comprises a mirror plate 32 attached to each top plate 52.The EUV mirror coating 14 is applied to the upper side of the tiltable mirror plate 32 facing away from the base plate 22.

[0108] Figures 6.1 and 6.2 show various embodiments of the interrupter or shading structure 26. Figure 6.1 shows an interrupter or shading structure 26, for example, made of material R.416727.

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[0110] The first insulation 28, e.g., silicon oxide. The interrupter or shading structure 26 is essentially formed in the shape of a T-beam 66, wherein its freestanding areas 72 are attached to the top of the base plate 22 by means of an joining connection 34. On the underside of the freestanding areas 72 of the interrupter or shading structure 26 in the shape of a T-beam 66, facing the base plate 22, there are shaded areas 70 in which, at least in some areas, no sputtering material is deposited in a sputtering process 64.The shaded areas 70 cause a defined electrical interruption of the electrically conductive Bragg layer stack 16 to produce an EUV mirroring 14 in the area of ​​the interrupter or shading structure 26, thereby advantageously preventing the formation of electrically conductive connections or short circuits between adjacent electrical potentials and maintaining potential separation.

[0111] Figure 6.2 shows a variant embodiment of the interrupter or shading structure 26, also made of the material of the first insulation 28, i.e., silicon oxide. The interrupter 26 according to the variant in Figure 6.2 has an L-shaped beam 68. In contrast to the T-shaped beam 66 shown in Figure 6.1, here there is only a freestanding area designed as a horizontal part 72, on the underside of which, facing the base plate 22, there is a shaded area 70 in which, at least partially, no sputtering material 40 is deposited. This uncoated area interrupts the electrically conductive material of the EUV mirror coating 14 in precisely this shaded area 70.

[0112] Here too, the freestanding area designed as a horizontal part 72 of the interrupter or shading structure 26, which is designed in the shape of an L-beam 68, is attached to the top of the base plate 22 by means of a joining connection 34.

[0113] Figure 7 shows a top view of a micromirror assembly 10, in which two adjacent first and second individual mirrors 44 and 46 are depicted. Each of the individual mirrors comprises first to fourth potentials or potential ranges, Qi to Q444.1, 44.2, 44.3, 44.4 with respect to the first individual mirror 44, and first to fourth potentials or potential ranges Q'i to Q'446.1, 46.2, 46.3, 46.4 with respect to the second individual mirror 46. From R.416727

[0114] - 19 -

[0115] The top view according to Figure 7 shows that the trenches 38 enclosing the first and second individual mirrors 44, 46 are provided with interrupting or shading structures 26 in T-beam form 66.

[0116] The top view in Figure 7 shows that the freestanding, horizontally designed areas 72 of the interrupting or shading structures 26, in the shape of T-beams 66, are each attached to the top of the base plate 22 by means of connecting structures 74, shown in dashed lines and designed as vertically designed parts 74. The extension of the interrupting or shading structures 26 between the individual quadrants corresponding to the aforementioned potentials or potential ranges allows for the advantageous maintenance of electrical separation 76 of the quadrant potentials, or, with respect to the area between the first individual mirror 44 and the second individual mirror 46, electrical separation 78 from the individual mirror potentials assigned to the first and second individual mirrors 44, 46, even after the application of the EUV mirroring material 14.

[0117] The illustrations in Figures 9 and 10 show variations of the geometries of the proposed interrupter or shading structures 26 depicted in Figures 6.1 and 6.2. In the two embodiments shown in Figures 8 and 9, interrupter or shading structures 26 are depicted in T-beam form 66 and in L-beam form 68, respectively. In these structures, additional, skirt-shaped shading structures 80 are provided on the underside of the freestanding, horizontally formed areas 72 facing the base plate 22. These shading structures further enlarge the shaded areas 70, which remain uncoated when the electrically conductive EUV mirror coating is applied.With designs such as those shown in the embodiments of Figures 8 and 9, the formation of electrically conductive connections or short circuits between adjacent potentials or potential zones can be prevented even more effectively, even if the sputtering process 64 preferably used for depositing the EUV mirror coating 14 has a more pronounced isotropic deposition characteristic and material of the EUV mirror coating 14 can therefore be deposited at least partially in shaded areas 70. A comparison of the embodiments of the interrupter or shading structures 26 according to Figures 8 and 9 with denjeni-R.416727.

[0118] - 20 -

[0119] The equations shown in Figures 6.1 and 6.2 show that in the first-mentioned embodiment variants according to Figures 8 and 9, the shaded areas 70 can be made significantly larger, thus preventing the formation of electrically conductive connections or short circuits between adjacent potentials or potential areas even more effectively.

[0120] Figure 10 shows an embodiment of an interrupter or shading structure 26, in which the interrupter or shading structure 26 is formed in a meandering shape 82 in a cross-sectional area perpendicular to the surface of the base plate 22. Compared to the embodiments in Figures 8 and 9, the meandering shape 82 of the embodiment in Figure 10 allows for a further increase in the shaded or uncoated areas. This results in the nested beam structure shown in Figure 10, which is a special form of the L-beam shape 68.

[0121] Similarly, Figure 11 shows an embodiment of the interrupting or shading structure 26, in which the interrupting or shading structure 26 is formed in a spiral or labyrinth shape 84 in a cross-sectional area perpendicular to the surface of the base plate 22. In comparison to the aforementioned embodiment according to Figure 10, the numerous nested, self-supporting, beam-shaped structures result in a further increase in the size of the shaded areas 70 compared to the representation according to the embodiments in Figures 8, 9, and 10.

[0122] Figure 12 shows a variant embodiment of an electrically conductive interrupter or shading structure 26 in the form of a widened T-shape 86, compared to the embodiment shown and described in Figure 6.1. The upper surfaces of the T-shaped interrupter or shading structure 86 not facing the base plate 22, and parts or partial areas of the potential zones 88, 90, can also be coated with electrically conductive material of the EUV mirror coating 14. The structures of the T-shaped interrupter or shading structure 86, which are designed as horizontal parts 72 and are correspondingly large and freestanding, can be used to create electrical isolation zones 92 as potential separations between adjacent potentials Ox, Qy, or R.416727.

[0123] - 21 -

[0124] Potential areas 88, 90 and / or conductor tracks for electrical control / connection of the electrically conductive interrupter or shading structure 26 are to be protected from a bridging coating with electrically conductive material of the EUV mirror coating 14.

[0125] Figure 13 shows a further embodiment of an interrupter or shading structure 26, in which, with respect to the top of the base plate 22, the interrupter or shading structure 26 corresponds to an inverted and widened T-shape 86. By providing a connecting structure designed as a vertical part 74, freestanding structures designed as horizontal parts 72 can also be created for the inverted T-shaped interrupter or shading structure 86, in which the surfaces / sides facing the base plate 22 can have shaded areas 70 in which no material of the electrically conductive EUV mirror coating 14 is deposited when the EUV mirror coating 14 is applied, thus advantageously preventing the formation of electrically conductive connections or short circuits between adjacent potentials or potential areas.If the upside-down T-shaped interrupter or shading structure 86 is made of an electrically conductive material, e.g. silicon 24, it can be electrically controlled accordingly and serve as an electrostatic shield 96.

[0126] When implementing the electrical control / connection of the electrostatic shielding 96, for example using electrical conductors 75 (not in BZL), it must be ensured that these can be electrically isolated from adjacent potentials Qx, Qy or potential ranges 88, 90 by providing electrical isolation zones 92 (potential separations). To protect these electrical isolation zones 92 (potential separations) from being covered by material of the EUV mirror coating 14, they can be covered by correspondingly large and freestanding horizontal structures 72 of the interrupter or shading structures 26.By ensuring a sufficiently large distance between the electrical insulation areas 92 (potential separations) and an edge area of ​​the freestanding structures designed as horizontal parts 72, it can be ensured that no material of the EUV mirror coating 14, which is electrically conductive, is applied during the application of the EUV mirror coating 14.

[0127] - 22 -

[0128] Bridging insulation areas 92 (potential separations), and separating adjacent potentials Ox, Qy or potential areas 88, 90 and / or conductor tracks for electrical control / connection of the electrostatic shielding 96 in an electrically conductive manner.

[0129] In the embodiment shown in Figure 13, the interrupter or shading structure 26 therefore has a dual function, namely maintaining a potential separation 92 and providing electrostatic shielding 96, generated by said inverted, T-shaped interrupter or shading structure 26, wherein the electrostatic shielding structure 96 is essentially achieved by the part of the T-shaped interrupter or shading structure 26 that is arranged / aligned perpendicular to the surface of the base plate 22. Figures 12 and 13 further show that the upper surfaces or surfaces of the T-shaped interrupter or shading structures 26, which are spaced apart from the base plate 22 via the connecting structure designed as a vertical part 74, and parts or partial areas of the potential ranges 88, 90, are covered by the material of the EUV mirror coating 14.

[0130] The embodiments shown in Figures 12 and 13 have in common that, due to the design of the interrupting or shading structures 26, they do not require any additional insulation layers to reliably maintain or establish electrical separation from adjacent potentials or potential areas or electrically conductive structures, such as conductor tracks.

[0131] Figure 14 shows an embodiment of the MMA assembly 10 in which the interrupter or shading structure 26 is arranged in the T-beam shape 66 in the trench 38 that separates the first individual mirror 44 from the second individual mirror 46. The upper surfaces of the interrupter or shading structure 26, which do not face the base plate 22, are at least partially coated with the electrically conductive EUV mirror coating 14. As can be seen from the illustration in Figure 14, the shaded areas 70 on the underside of the interrupter or shading structure 26, which is designed as freestanding horizontal parts 72 and forms in the T-beam shape 66, enable the maintenance of the potential isolation.

[0132] - 23 -

[0133] The electrical isolation between potentials or potential ranges of the two adjacent individual mirrors, namely the first individual mirror 44 and the second individual mirror 46, and the possibility of a defined, independent electrical control of the mirror plates 32 coated with the EUV mirroring 14 and anchored to associated top plates 52, which are freely movable via a free-standing joining connection 34. On the underside of a top plate 52 facing the base plate 22 are structures of the electrode structure 36, with further structures of the electrode structure 36 being provided on the upper side of the base plate 22, which is made of electrically conductive silicon material 24 and facing the top plate 52.By means of the electrode structures 36 provided within the first and second individual mirrors 44, 46, a movement, in particular a tilting movement, of the top plate 52 and the mirror plate 32 attached to it of the first and second individual mirrors 44, 46 can be generated independently of each other. In the illustration according to Figure 14, the interrupter or shading structure 26 is arranged, for example, within the trench 38 in position 98 in / within a lower electrode plane of the electrode structure 36.

[0134] In contrast, Figure 15 shows an embodiment in which the interrupter or shading structure 26, formed in the shape of a T-beam 66, is formed by means of the layer system located between the lower electrode plane and the upper surface of the base plate 22. The second insulation 30 runs along its underside; a layer of the first insulation 28, here silicon oxide, extends across its upper surface. In both embodiments according to Figures 14 and 15, the interrupter or shading structure 26, here in each case formed in the shape of a T-beam 66, is made of the material of the first insulation 28, i.e., silicon oxide. With respect to Figures 14 and 15, only the lateral and vertical positions 98 and 100 of the interrupter 26 differ from each other. In the lower region, i.e.,In the area of ​​the lower electrode plane of the electrode structure 36 or the base plate 22, little or no free space is available for tilting the two adjacent individual mirrors 44, 46, which is why a particularly favorable position 100 results here for the arrangement of the interrupter or shading structure 26, especially in a layer system integrated on the base plate 22. R.416727.

[0135] - 24 -

[0136] In the embodiment shown in Figure 16, an arrangement of an interrupter or shading structure 26 is depicted, in which several interrupter or shading structures 26 are stacked on top of each other in T-beam shape 66 and / or in L-beam shape 68. If these are separated from each other, for example, by layers of secondary insulation, in particular SiN 30, such stacked arrangements of interrupter or shading structures 26 offer redundant protection.For example, if the shaded areas of an interrupter or shading structure 26 have been unintentionally sputtered with electrically conductive material, an additional, stacked interrupter or shading structure 26 within the stacked structure, as shown in Figure 16, can maintain electrical insulation or electrical separation / potential isolation from adjacent potentials or potential ranges and / or electrically conductive structures, such as conductor tracks, even after the deposition of the electrically conductive EUV mirror coating 14. In this embodiment as well, the stacked arrangement of interrupter or shading structures 26 is located within the trench 38 that separates the first individual mirror 44 from the second individual mirror 46.The stacked arrangement of the interrupting or shading structures 26 according to Figure 16 enables an even more reliable maintenance of a potential separation 92 through the use of a large number of shaded areas 70, due to the large number of interruptions of the Bragg layer stack 16 for producing an electrically conductive EUV mirror coating 14 in the area of ​​the shaded areas 70.

[0137] Analogous to the above embodiment variants, the embodiment variant according to Figure 16 comprises said micromirror assembly 10, designed as a functional structure arrangement, the base plate 22, comprising the two individual mirrors 44, 46, furthermore mirror plates 32, electrode structures 36 and top plates 52, isolated within a functional structure arrangement.

[0138] For the sake of completeness, it should be mentioned that the stacked arrangement of interrupting or shading structures 26 shown in Figure 16 and the resulting multitude of shaded areas 70 enable a potential separation 92 of the second potential Gb 44.2 of the first single mirror 44 from the first potential Q'i 46.1 of the second single mirror 46 to be maintained. R.416727

[0139] - 25 -

[0140] Figure 17 shows an embodiment in which a first decentralized interrupting or shading structure 106 is arranged on a micromirror assembly 10, essentially formed by said functional structure arrangement, at the bottom of the trench 38, which separates the first individual mirror 44 from the second individual mirror 46, in the area of ​​at least one wall of the trench 38.This is designed in L-beam form 68 to save installation space and allows an interruption of the applied electrically conductive EUV mirror coating 14 at least partially in the shaded area 70 of the structure designed as a freestanding horizontal part 72 and / or at least partially in the area shaded by the structure designed as a freestanding horizontal part 72 of a surface arranged between the structure designed as a freestanding horizontal part 72 and the base plate 22 and the structure designed as a freestanding horizontal part 72 directly opposite the surface arranged.

[0141] Similarly, in the embodiment shown in Figure 18, two opposing, separate, decentralized structures 106, 108 are arranged relative to the central axis 104, which extends between the first single mirror 44 and the second single mirror 46. Both structures are formed in the shape of L-beams 68. The two separate interrupters 106, 108, arranged decentrally with respect to the central axis as shown in Figure 18, interrupt the electrically conductive EUV mirror coating 14 above the parasitic sputtering material 40. Thus, the second potential Q244.2 of the first single mirror 44 is also separated from the first potential Q'i 46.1 of the second single mirror 46.

[0142] Figure 19 shows an embodiment of the micromirror assembly 10, which is also designed as a functional structure arrangement. At the bottom of the trench 38, which separates the first individual mirror 44 and the second individual mirror 46, a deep and narrow gap 110 is provided within the layer system separating the electrode planes or the electrode structures 36 and the base plate 22. This gap can optionally extend into the base plate 22. The width of the gap 110 should be chosen to be at least large enough to prevent any surface closure or electrically conductive bridging of the gap 110 by deposited material of the EUV mirror coating 14. The deep gap indicated in the illustration according to Figure 20 is shown in Figure 20.

[0143] - 26 -

[0144] The narrow slit 110 corresponds essentially to the representation in Figure 5 with regard to its geometry. In both variants, namely Figure 5 and Figure 19, suitably advantageous geometric dimensions with respect to the undercut or freestanding edges 76 shown can be used to ensure that only a relatively narrow area at the bottom of the deep and narrow slit 110 is coated with sputtering material 40 or EUV mirroring material 14. The representation in Figure 20 shows that here, too, electrical separation of the second potential Gh 44.2 of the first single mirror 44 from the first potential Q'i 46.1 of the second single mirror 46 can be maintained. Otherwise, the setup shown in Figure 20, apart from the configuration of the deep and narrow slit 110, is comparable to the embodiments already described above according to Figures 14, 15, 16, 17, and 18.

[0145] Figures 20, 21, and 22 each show various embodiments of interrupter or shading structures 26, in which different embodiments, in particular the design of the interrupter or shading structure 26 in T-beam shape 66 and / or in L-beam shape 68, are combined. This allows for an improvement in the reliability of electrical separation or isolation between potentials or potential ranges and / or electrically conductive structures such as conductor tracks. In the embodiments shown in Figures 20, 21, and 22, interrupter or shading structures 26 are shown in a stacked serial arrangement 112 or in adjacent arrangements 114, with reference to the trenches 38 that separate the first single mirror 44 and the second single mirror 46.The possibility of combining several optionally different geometries of interrupter or shading structures 26 allows a multitude of shaded areas 70 to be formed on the undersides of the freestanding horizontal structures 72 facing the base plate 22, through the large number of structures designed as freestanding horizontal parts 72. This ensures robust and reliable electrical separation or isolation between potentials or potential ranges and / or electrically conductive structures, such as conductor tracks. R.416727.

[0146] - 27 -

[0147] Furthermore, the invention relates to a micromirror assembly 10 with a base plate 22 comprising at least one mirror plate 32, at least one electrode structure 36, and a top plate 52. The micromirror assembly 10 has a number of individual mirrors (20, 44, 46) separated by grooves 38, wherein the individual mirrors 20, 44, 46 comprise an electrically conductive EUV mirror coating 14, for example, sputtered or deposited by a PVD process 64. This coating is electrically interrupted in the grooves 38 by interrupting or shading structures 26, wherein, at least in some areas, no material of the EUV mirror coating 14 is deposited on the upper surfaces or surfaces of freestanding horizontal parts 72 facing the base plate 22, thus creating coating-free areas.

[0148] This allows a local interruption of the electrically conductive EUV coating 14 to be achieved, so that an electrical separation or isolation between potentials or potential ranges and / or electrically conductive structures, such as conductor tracks, can be maintained.

[0149] Furthermore, the invention relates to the use of the method for manufacturing a MEMS assembly, in particular a micromirror assembly 10.

[0150] The invention is not limited to the embodiments described here and the aspects highlighted therein. Rather, within the scope specified by the claims, a multitude of modifications are possible that fall within the bounds of what is considered skilled in the art.

Claims

R.416727 - 28 - Claims 1. Method for manufacturing an ME MS assembly, in particular a micromirror assembly (10) with a number of separate, relative to each other movable individual mirrors (20, 44, 46) comprising the following process steps: a) Machining of the micromirror assembly (10) as a functional structure arrangement such that, when structures (32, 36, 52) are removed from the material (24) of the functional structure arrangement, interrupting or shadowing structures (26) are provided in the individual mirrors (20, 44, 46) separating structures, areas or trenches (38), which have shadowed areas (70) or with which shadowed areas are created, in which, at least in some areas, free areas are created from the electrically conductive layer or electrically conductive layer stack during the deposition of an electrically conductive layer or an electrically conductive layer stack as a conductive mirror coating.b) Provision of the micromirror assembly (10) processed according to process step a) and deposition of the electrically conductive layer or electrically conductive layer stack by applying one or more deposition processes to previously isolated and freely movable mirror plates (32) of the individual mirrors (20, 44, 46) such that, c) the shaded areas (70) in the area of ​​the interrupting or shading structures (26) locally cause an interruption of the deposited electrically conductive layer or electrically conductive layer stack and maintain electrical insulation or electrical separation / potential separation (92) between adjacent potentials or potential areas and / or electrically conductive structures after the deposition of the electrically conductive layer or electrically conductive layer stack. R.416727 - 29 - 2. Method according to claim 1, characterized in that the deposited electrically conductive layer or the deposited electrically conductive layer stack forms a Bragg layer stack (16) for producing / generating an EUV mirror coating (14).

3. Method according to claims 1 and 2, characterized in that, in the process of isolating the structures (32, 36, 52) according to process step a), a base plate (22), at least one mirror plate (32), at least one electrode structure (36) and at least one top plate (52) are produced.

4. Method according to claims 1 to 3, characterized in that at least one freestanding structure designed as a horizontal part (72) and at least one connecting structure connecting the freestanding structure designed as a horizontal part (72) to the base plate 22 as a vertical part (74) are formed on the interrupting or shading structures (26) according to method step a).

5. Method according to claims 1 to 4, characterized in that the shaded areas (70) produced according to method step a) are formed at least partially on a top surface / surface facing the base plate (22) of the freestanding structure (72) of the interrupter or shading structure (26) designed as a horizontal part (72).

6. Method according to claims 2 to 5 characterized in that the multilayer applied, electrically conductive EUV mirror coating (14) forming a Bragg layer stack (16) is deposited by means of a PVD deposition / deposition process (64).

7. Method according to claims 1 to 6, characterized in that the Bragg layer stack (16) comprises a plurality of molybdenum / silicon layers or tantalum / zirconium layers.

8. Method according to claims 1 to 6, characterized in that the interrupting or shading structures (26) are in a senk-R.416727 - 30 - The cross-sectional area oriented to the right towards the top of the base plate (22) may be formed having a T-beam shape (66) or an L-beam shape (68).

9. Method according to claims 1 to 8, characterized in that the interrupting or shading structures (26) are formed in a cross-sectional area oriented perpendicular to the top of the base plate (22) having a meander shape (82) or a spiral or labyrinth shape (84).

10. Method according to claims 1 to 9, characterized in that the interrupting or shading structures (26) are formed in T-bar shape (66) or in L-bar shape (68) to maintain an electrical separation or isolation between adjacent potentials or potential ranges and / or electrically conductive structures within a first and / or a second single mirror (44, 46).

11. Method according to claims 1 to 10, characterized in that the interrupting or shading structures (26) are formed in T-bar shape (66) or in L-bar shape (68) to maintain an electrical separation or isolation of potentials or potential ranges and / or electrically conductive structures between adjacent individual mirrors (44, 46).

12. Method according to claims 1 to 10, characterized in that the interrupting or shading structures (26) are formed in the material, in particular electrically conductive silicon (24), of the micromirror assembly (10) and an electrical separation or isolation and / or potential separation (92) to adjacent potentials, potential ranges and / or electrically conductive structures is carried out by means of a first isolation (28), in particular SiO2, and / or a second isolation (30), in particular SiN.

13. Method according to claims 1 to 12, characterized in that the shaded areas (70) are located at the interrupter or Ab-R.416727 - 31 - Shading structures (26) can be enlarged by means of skirt-shaped shading structures (80) adjacent potentials, potential areas and / or electrically conductive structures.

14. Method according to claims 1 to 13, characterized in that the interrupting or shading structures (26) are made of electrically conductive silicon material (24) in a widened T-shape (86) with a potential separation (92) free of an insulating layer.

15. Method according to claims 1 to 14, characterized in that the interrupting or shading structures (26) are designed as electrostatic shielding structures (96).

16. Method according to claims 1 to 15, characterized in that partial areas of the interrupting or shading structures (26), designed in T-bar shape (66) or in L-bar shape (68), are implemented in the base plate (22) of the micromirror assembly (10) designed as a functional structure arrangement.

17. Method according to claims 1 to 16, characterized in that the interrupting or shading structures (26), with respect to a central axis (104) between potentials to be separated, in particular individual mirrors (20, 44, 46), are designed as first decentralized interrupters (106) in edge areas or in the area of ​​the bottom of a trench structure or as first and second decentralized interrupters (106, 108) on the base plate (22).

18. Method according to claims 1 to 17, characterized in that the interrupting or shading structures (26) comprise a plurality of structures in T-beam shape (66) and / or in L-beam shape (68) arranged in a stacked arrangement (112) and / or side by side arrangement (114) are arranged and are made of material, in particular electrically conductive silicon (24). R.416727 - 32 - 19. Micromirror assembly (10) with a base plate (22), with at least one mirror plate (32), with at least one electrode structure (36) and at least one top plate (52), characterized in that the micromirror assembly (10) comprises a number of individual mirrors (20, 44, 46) separated by trenches (38), wherein the individual mirrors (20, 44, 46) comprise an electrically conductive mirror coating (14) sputtered by a PVD process (64), which is electrically interrupted in the trenches (38) by interrupting or shading structures (26) having coating-free areas (70), wherein the coating-free areas (70) are formed on the surface facing the base plate (22) or top side of structures designed as freestanding horizontal parts (72).

20. Use of the method according to any one of claims 1 to 18 for the manufacture of a MEMS assembly, in particular a micromirror assembly (10).

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