Slurry, polishing method, component production method, and semiconductor component production method

Abstract

A slurry comprising a water-soluble polymer, water, and abrasive grains that contain alumina particles, the average particle diameter of the alumina particles being 2000 nm or less, and the average aspect ratio of the alumina particles being 1.20 or more. A polishing method comprising a step for polishing a member to be polished by using the slurry. A component production method including a step for obtaining a component by using a member to be polished that has been polished by the polishing method. A semiconductor component production method including a step for obtaining a semiconductor component by using a member to be polished that has been polished by the polishing method.

Description

Slurry, polishing method, method for producing component, and method for producing semiconductor component

[0001] The present disclosure relates to a slurry, a polishing method, a method for producing a component, a method for producing a semiconductor component, and the like.

[0002] In the semiconductor field, with the improvement in performance of ultra-LSI devices, it has become increasingly difficult to achieve both higher integration and higher speed through miniaturization technologies that are extensions of conventional technologies. Accordingly, technologies for achieving higher integration in the vertical direction while advancing miniaturization of semiconductor elements (that is, technologies for forming multilayer wirings) have been developed.

[0003] As such a technology, hybrid bonding using a resin material may be used in some cases. In hybrid bonding, after a resin portion (a portion containing a resin material) on a metal portion (a portion containing a metal material: a metal pattern formed by photolithography, such as a copper pattern, a tin-silver alloy pattern, or the like) is removed by polishing (for example, CMP (Chemical Mechanical Polishing)), an exposed surface in which the metal portion and the resin portion are exposed is obtained, and then the exposed surface can be bonded to a bonding target. The resin portion can be obtained, for example, by supplying a curable resin material onto the metal portion and then curing the resin material.

[0004] CMP is usually performed using an apparatus capable of supplying a polishing liquid onto a polishing pad. The surface of the member to be polished is polished by pressing the member to be polished against the polishing pad while supplying the polishing liquid between the surface of the member to be polished and the polishing pad. As described above, in CMP technology, polishing liquid is one of the core technical elements, and various polishing liquids have been developed so far to obtain high-performance polishing liquids (see, for example, Patent Document 1 below).

[0005] Japanese Unexamined Patent Publication No. 2008-288537

[0006] According to studies by the present inventor, when a slurry contains alumina particles and a water-soluble polymer, it has been found that depending on the average particle diameter and average aspect ratio of the alumina particles, there are cases where the polishing rate is increased compared to a case where the slurry does not contain a water-soluble polymer, and cases where the polishing rate is not increased.

[0007] Therefore, one aspect of this disclosure aims to provide a slurry containing alumina particles and a water-soluble polymer that can achieve a higher polishing speed for resin materials compared to a slurry that does not contain a water-soluble polymer. Another aspect of this disclosure aims to provide a polishing method using said slurry. Another aspect of this disclosure aims to provide a method for manufacturing parts using said polishing method. Another aspect of this disclosure aims to provide a method for manufacturing semiconductor parts using said polishing method.

[0008] This disclosure includes, for example, the following aspects: [1] A slurry containing abrasive grains containing alumina particles, a water-soluble polymer, and water, wherein the average particle size of the alumina particles is 2000 nm or less, and the average aspect ratio of the alumina particles is 1.20 or more. [2] The slurry according to [1], wherein the average particle size is 500 nm or more. [3] The slurry according to [1] or [2], wherein the average aspect ratio is 2.00 or less. [4] The slurry according to any one of [1] to [3], wherein the water-soluble polymer contains polyvinylpyrrolidone. [5] The slurry according to any one of [1] to [4], wherein the content of the water-soluble polymer is 0.1 to 5% by mass. [6] The slurry according to any one of [1] to [5], further containing an organic acid component. [7] The slurry according to [6], wherein the organic acid component contains an amino acid component. [8] The slurry according to [6] or [7], wherein the content of the organic acid component is 0.1 to 5% by mass. [9] A slurry according to any one of [1] to [8], further containing an organic solvent.

[10] The slurry according to [9], wherein the organic solvent is 3-methoxy-3-methyl-1-butanol.

[11] A slurry according to any one of [1] to

[10] , wherein the pH is 1.0 to 7.0.

[12] A polishing method comprising the step of polishing a member to be polished using a slurry according to any one of [1] to

[11] .

[13] The polishing method according to

[12] , wherein the member to be polished contains a polyimide resin.

[14] A method for manufacturing a part, comprising the step of obtaining a part using the member to be polished by the polishing method according to

[12] or

[13] .

[15] A method for manufacturing a semiconductor part, comprising the step of obtaining a semiconductor part using the member to be polished by the polishing method according to

[12] or

[13] .

[0009] According to one aspect of this disclosure, a slurry containing alumina particles and a water-soluble polymer can be provided that can achieve a higher polishing speed for resin materials compared to a slurry that does not contain a water-soluble polymer. According to another aspect of this disclosure, a polishing method using the slurry can be provided. According to yet another aspect of this disclosure, a method for manufacturing parts using the polishing method can be provided. According to yet another aspect of this disclosure, a method for manufacturing semiconductor parts using the polishing method can be provided.

[0010] The embodiments of this disclosure will be described below.

[0011] In this specification, numerical ranges indicated using "~" represent a range that includes the numbers before and after "~" as the minimum and maximum values, respectively. "A or greater" in a numerical range means A and the range greater than A. "A or less" in a numerical range means A and the range less than A. In numerical ranges described stepwise in this specification, the upper or lower limit of a numerical range in one step can be arbitrarily combined with the upper or lower limit of a numerical range in another step. In numerical ranges described in this specification, the upper or lower limit of that numerical range may be replaced with the values ​​shown in the examples. "A or B" means that either A or B may be included, or both may be included. Unless otherwise specified, the materials exemplified in this specification can be used individually or in combination of two or more. The content of each component in a composition means the total amount of multiple substances present in the composition if there are multiple substances corresponding to each component in the composition, unless otherwise specified. The term "process" includes not only independent processes, but also any process that cannot be clearly distinguished from other processes, as long as its intended function is achieved.

[0012] <Slurry> The slurry according to this embodiment may be a slurry for polishing resin materials (slurry for resin materials), and can be used to polish a surface containing a resin material, and can be used as a CMP polishing solution. Examples of resin materials include polyimide resin, epoxy resin, acrylic resin (polymer having structural units derived from monomers having (meth)acryloyl groups), polybenzoxazole resin, phenol resin, etc. The resin material may include at least one selected from the group consisting of polyimide resin, epoxy resin, acrylic resin, polybenzoxazole resin, and phenol resin. The resin material may have carbon-carbon bonds. The resin material may be a photosensitive resin or a non-photosensitive resin (a resin that does not have photosensitivity).

[0013] Polyimide resins have excellent electrical insulation properties and can be used as insulating layers between different metal layers and between wiring. Methods for producing polyimide resin films include forming a thin film of polyimide solution by spin coating, dip coating, spray coating, etc., and then forming a polyimide resin film by heating and / or light irradiation.

[0014] The slurry according to this embodiment contains abrasive grains containing alumina particles, a water-soluble polymer, and water, wherein the average particle size of the alumina particles is 2000 nm or less, and the average aspect ratio of the alumina particles is 1.20 or more. According to the slurry according to this embodiment, resin materials can be polished at a higher polishing speed compared to when the slurry does not contain a water-soluble polymer. The phenomenon in which a higher polishing speed can be obtained when the slurry contains a water-soluble polymer than when the slurry does not contain a water-soluble polymer is called the boost effect. The boost effect can be confirmed by calculating the ratio of the polishing speed of the slurry containing a water-soluble polymer to the polishing speed of the slurry without a water-soluble polymer (polishing speed of the slurry containing a water-soluble polymer / polishing speed of the slurry without a water-soluble polymer; this ratio is also called the boost ratio), and if the boost ratio is greater than 1.00, it can be said that there is a boost effect.

[0015] According to the slurry of this embodiment, a boost multiplier of more than 1.00 (preferably 1.10 or more, 1.20 or more, 1.30 or more, 1.40 or more, 1.50 or more, 1.60 or more, 1.70 or more, 1.80 or more, 1.90 or more, 2.00 or more, 2.10 or more, 2.20 or more, 2.30 or more, 2.40 or more, 2.50 or more, 2.60 or more, 2.70 or more, 2.80 or more, 2.90 or more, or 3.00 or more) can be achieved in the evaluation described in the examples below.

[0016] According to one embodiment of the slurry of this embodiment, in the evaluation described in the examples below, a polishing speed of, for example, 600 nm / min or more (preferably 800 nm / min or more, 1000 nm / min or more, 1500 nm / min or more, 1800 nm / min or more, 2000 nm / min or more, 2200 nm / min or more, or 2300 nm / min or more) can be obtained for the resin material.

[0017] In a slurry containing alumina particles and a water-soluble polymer, the reason why a higher polishing speed of resin materials can be obtained compared to a slurry without a water-soluble polymer is not entirely clear, but the following reasons are given as examples. However, the reasons for obtaining the above effects are not limited to those listed below. Specifically, the water-soluble polymer adheres to the resin material, modifying it and weakening the cohesive force between the molecular chains of the resin material, thereby reducing the mechanical strength of the resin material. Also, since resin materials are water-insoluble and hydrophobic, fragments of resin material generated by polishing are generally difficult to disperse in water. However, the presence of a water-soluble polymer in the polishing solution causes the water-soluble polymer to adhere to the fragments of resin material, making the surface hydrophilic. Therefore, the fragments of resin material become easier to disperse in the liquid, promoting their removal from the polished surface. In addition, the water-soluble polymer adhering to the resin material on the polished surface and the water-soluble polymer adhering to the fragments of resin material repel each other, suppressing the re-adhesion of the fragments of resin material to the polished surface. Furthermore, because the average particle size of the alumina particles is relatively small, a sufficient number of abrasive grains per unit area in contact with the surface to be polished can be easily secured, allowing for efficient polishing of resin materials. In addition, because the average aspect ratio of the alumina particles is relatively large, the abrasive grains have an elongated shape. When the longitudinal tip of the abrasive grain contacts the surface to be polished, the sharp edge can efficiently polish the resin material. When the short-side tip of the abrasive grain contacts the surface to be polished, the contact area with the surface to be polished increases, allowing more resin to be adsorbed onto the alumina particles and polished together with the alumina particles from the surface to be polished.

[0018] The slurry according to this embodiment can be used, for example, for polishing in the wiring formation process of semiconductor devices. The slurry according to this embodiment can be suitably used for polishing resin materials used as constituent materials of hard masks, as well as for polishing interlayer insulating films using resin materials.

[0019] (Abrasive grains) The slurry according to this embodiment contains abrasive grains including alumina particles. Examples of abrasive grains include α-alumina particles (particles containing α-alumina) and γ-alumina particles (particles containing γ-alumina). The alumina particles may be α-alumina particles, or alumina particles whose surface is α-alumina, from the viewpoint of easily obtaining a high polishing speed for resin materials and easily obtaining a high boost effect. The alumina particles may include colloidal alumina from the viewpoint of easily obtaining a high polishing speed for resin materials, easily obtaining a high boost effect, and easily preventing defects such as scratches from occurring on the surface of the object to be polished after polishing, thus improving the flatness of the polished surface. The alumina particles may be surface-treated alumina particles from the viewpoint of improving the dispersibility of alumina particles, easily obtaining a high polishing speed for resin materials, easily obtaining a high boost effect, and easily preventing defects such as scratches from occurring on the surface of the object to be polished after polishing, thus improving the flatness of the polished surface.

[0020] The average particle size of the alumina particles is 2000 nm or less. The average particle size of the alumina particles may be 100 nm or more, 200 nm or more, 300 nm or more, 400 nm or more, 500 nm or more, greater than 500 nm, 550 nm or more, 600 nm or more, 650 nm or more, 700 nm or more, 750 nm or more, 800 nm or more, 850 nm or more, or 900 nm or more, as this ensures sufficient physical polishing ability per alumina particle and facilitates obtaining a high polishing speed for the resin material and a high boost effect. The average particle size of the alumina particles may be less than 2000 nm, 1900 nm or less, 1800 nm or less, 1700 nm or less, 1600 nm or less, 1500 nm or less, less than 1500 nm, 1450 nm or less, 1400 nm or less, 1300 nm or less, 1200 nm or less, 1100 nm or less, 1000 nm or less, less than 1000 nm, or 950 nm or less, as this makes it easier to ensure a sufficient number of alumina particles per unit area in contact with the surface to be polished, and from the viewpoint of easily obtaining a high polishing speed for resin materials and easily obtaining a high boost effect. From these perspectives, the average particle size of alumina particles may be 100-2000 nm, 100-1500 nm, 100-1000 nm, 500-2000 nm, 500-1500 nm, 500-1000 nm, 700-2000 nm, 700-1500 nm, 700-1000 nm, 900-2000 nm, 900-1500 nm, or 900-1000 nm. The average particle size of abrasive grains may be within the above range.

[0021] The "average particle size" is the secondary particle size of the abrasive grains and can be obtained by measuring the particle size of the abrasive grains in the slurry or the particle size of the abrasive grains before they are mixed into the slurry. The average particle size is the "volume average diameter" which can be measured using a light diffraction scattering particle size distribution analyzer, and a sample may be prepared by dispersing the abrasive grains in water and then measured. For example, it can be measured using a Microtrac MT3300EXII manufactured by Microtrac BEL Corp. Since colloidal particles are usually obtained in a dispersed state in water, they can also be measured after being appropriately diluted so that they fall within the scattering intensity range described above.

[0022] The average aspect ratio of the alumina particles is 1.20 or greater. In this specification, the aspect ratio of the alumina particles means the ratio of the maximum length in the longitudinal direction (the direction in which the longest length is located) to the maximum length in the short direction (the direction perpendicular to the longitudinal direction) (maximum length in the longitudinal direction / maximum length in the short direction).

[0023] The average aspect ratio of the alumina particles may be 1.22 or higher, 1.24 or higher, 1.25 or higher, 1.26 or higher, 1.28 or higher, 1.30 or higher, 1.32 or higher, 1.34 or higher, 1.35 or higher, 1.36 or higher, 1.38 or higher, 1.40 or higher, greater than 1.40, 1.41 or higher, 1.42 or higher, 1.43 or higher, 1.44 or higher, 1.45 or higher, 1.46 or higher, 1.47 or higher, 1.48 or higher, or 1.49 or higher, from the viewpoint of being able to efficiently polish the resin material with sharp edges, easily obtain a high polishing speed for the resin material by increasing the contact area with the surface to be polished, and easily obtain a high boost effect. The average aspect ratio of the alumina particles may be 2.00 or less, less than 2.00, 1.95 or less, 1.90 or less, less than 1.90, 1.85 or less, 1.80 or less, less than 1.80, 1.75 or less, 1.70 or less, less than 1.70, 1.65 or less, 1.60 or less, less than 1.60, 1.58 or less, 1.56 or less, 1.55 or less, 1.54 or less, 1.53 or less, 1.52 or less, 1.51 or less, 1.50 or less, less than 1.50, or 1.49 or less, from the viewpoint of easily obtaining a high polishing speed for the resin material and easily obtaining a high boost effect. From these perspectives, the average aspect ratio of alumina particles is 1.20–2.00, 1.20–1.90, 1.20–1.80, 1.20–1.70, 1.20–1.60, 1.20–1.55, 1.20–1.50, 1.30–2.00, 1.30–1.90, 1.30–1.80, 1.30–1.70, 1.30–1.60, 1.30–1.55, 1.30–1.50, 1.40–2.00, 1.40–1.90, 1.40–1. The average aspect ratio of the alumina particles may be 80, 1.40-1.70, 1.40-1.60, 1.40-1.55, 1.40-1.50, 1.44-2.00, 1.44-1.90, 1.44-1.80, 1.44-1.70, 1.44-1.60, 1.44-1.55, 1.44-1.50, 1.48-2.00, 1.48-1.90, 1.48-1.80, 1.48-1.70, 1.48-1.60, 1.48-1.55, or 1.48-1.50. The average aspect ratio of the alumina particles can be measured by the method described in the examples below.

[0024] Methods for adjusting the average particle size and average aspect ratio of alumina particles include changing the manufacturing conditions of the alumina particles, and changing the grinding method and conditions. These methods may be used individually or in combination.

[0025] The alumina particle content in the abrasive grains may be 50% by mass or more, more than 50% by mass, 60% by mass or more, 70% by mass or more, 80% by mass or more, 90% by mass or more, 95% by mass or more, 98% by mass or more, or 99% by mass or more, based on the total mass of the abrasive grains (the entire mass of abrasive grains contained in the slurry), from the viewpoint of easily obtaining a high polishing speed for the resin material and easily obtaining a high boost effect. The abrasive grains may be composed of alumina particles (substantially 100% by mass of the abrasive grains contained in the slurry are alumina particles).

[0026] The abrasive content may be within the following ranges based on the total mass of the slurry. The abrasive content may be 20% by mass or less, 15% by mass or less, 10% by mass or less, 8% by mass or less, 5% by mass or less, 3% by mass or less, 2% by mass or less, or 1% by mass or less, from the viewpoint of easily obtaining a high polishing speed for the resin material, easily obtaining a high boost effect, and easily suppressing the occurrence of scratches, as the amount of abrasive per unit area of ​​the surface to be polished is reduced, making it easier for the water-soluble polymer to preferentially contact the surface to be polished, thereby promoting the modification of the resin material. The abrasive content may be 0.01% by mass or more, 0.05% by mass or more, 0.1% by mass or more, 0.3% by mass or more, 0.5% by mass or more, 0.7% by mass or more, 0.9% by mass or more, or 1% by mass or more, from the viewpoint of easily obtaining a high polishing speed for the resin material, easily obtaining a high boost effect, and easily obtaining a high boost effect, as the number of times the abrasive comes into contact with the surface to be polished per unit time is increased. From these perspectives, the abrasive content may be 0.01 to 20% by mass, 0.01 to 10% by mass, 0.01 to 5% by mass, 0.01 to 2% by mass, 0.1 to 20% by mass, 0.1 to 10% by mass, 0.1 to 5% by mass, 0.1 to 2% by mass, 0.5 to 20% by mass, 0.5 to 10% by mass, 0.5 to 5% by mass, 0.5 to 2% by mass, 0.9 to 20% by mass, 0.9 to 10% by mass, 0.9 to 5% by mass, or 0.9 to 2% by mass.

[0027] (Additives) The slurry according to this embodiment contains additives. "Additives" refers to substances contained in the slurry other than abrasive grains and water.

[0028] [Water-soluble polymer] The slurry according to this embodiment contains a water-soluble polymer. A "water-soluble polymer" is defined as a polymer that dissolves in 0.1 g or more of water per 100 g. By containing abrasive grains having a specific average particle size and a specific average aspect ratio, and a water-soluble polymer in the slurry, it becomes easier to obtain a high polishing speed and a high boost effect on the resin material.

[0029] Examples of water-soluble polymers include glycerin-based polymers such as polyglycerin and polyglycerin derivatives; polycarboxylic acids such as polyacrylic acid and polymaleic acid; acrylic polymers such as polyacrylamide and polydimethylacrylamide; polysaccharides such as carboxymethylcellulose, hydroxyethylcellulose, hydroxypropylcellulose, agar, curdlan, dextrin, cyclodextrin, and pullulan; vinyl polymers such as polyvinyl alcohol, polyvinylpyrrolidone, polyacrolein, and poly-N-vinylacetamide; and oxazoline polymers such as polyoxazoline. The water-soluble polymer may contain vinyl polymers, and may contain at least one selected from the group consisting of polyvinyl alcohol, polyvinylpyrrolidone, and polyacrolein, and may contain polyvinylpyrrolidone. The inclusion of polyvinylpyrrolidone in the slurry makes it easier to obtain a high polishing speed and a high boost effect on the resin material.

[0030] Water-soluble polymers may contain surfactants. In this specification, a surfactant means a substance that has both hydrophilic and hydrophobic groups in its molecule, and includes ionic surfactants and nonionic surfactants. Examples of hydrophilic groups include hydroxyl groups, carboxyl groups, sulfone groups, amino groups, ether groups, and ester groups. Examples of hydrophobic groups include alkyl groups, phenyl groups, naphthyl groups, and alkenyl groups.

[0031] Examples of surfactants include ether-type surfactants such as polyglycerin, polyglycerin fatty acid esters, polyglycerin lauryl acid esters, polyglycerin derivatives, polyoxyethylene monostyrene-derived phenyl ether, polyoxyethylene distyrene-derived phenyl ether, polyoxyethylene tristyrene-derived phenyl ether, polyoxyethylene sorbitan monolaurate, polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene nonylphenyl ether, polyoxyethylene naphthyl ether, polyoxypropylene polyoxyethylene alkyl ether, polyoxyethylene polyoxypropylene alkyl ether, polyoxyethylene alkyl allyl ether, polyoxyethylene polyoxypropylene ether derivatives, polyoxypropylene glyceryl ether, polyethylene glycol, methoxypolyethylene glycol, acetylene glycol, and polyoxyethylene polyoxypropylene glycol; amino ether-type surfactants such as polyoxyethylene alkylamines; ether ester-type surfactants such as polyoxyethylene glycerol borate fatty acid esters and polyoxyethylene alkyl esters; and alkanolamide-type surfactants such as polyoxyethylene fatty acid alkanolamides.

[0032] When the resin material is a resin material containing nitrogen atoms (for example, polyimide resin), the water-soluble polymer may also contain a water-soluble polymer containing nitrogen atoms (nitrogen-containing water-soluble polymer) from the viewpoint of easily obtaining a high polishing speed of the resin material and easily obtaining a high boost effect. By including a nitrogen-containing water-soluble polymer in the water-soluble polymer, the affinity between the water-soluble polymer (nitrogen-containing water-soluble polymer) and the resin material containing nitrogen atoms is increased, making it easier to obtain a high polishing speed and a high boost effect of the resin material.

[0033] Examples of nitrogen-containing water-soluble polymers include polyacrylamide, polydimethylacrylamide, polyvinylpyrrolidone, poly-N-vinylacetamide, polyoxazoline, polyoxyethylene alkylamine, and polyoxyethylene fatty acid alkanolamide.

[0034] The water-soluble polymer may have a cyclic structure, from the viewpoint of easily obtaining a high polishing speed for the resin material and easily obtaining a high boost effect. When the water-soluble polymer has a cyclic structure, it becomes bulkier. When such a water-soluble polymer adheres to the fragments of resin material generated by polishing, the water-soluble polymer adhering to the resin material on the polished surface and the water-soluble polymer adhering to the fragments of resin material become more repelled, further suppressing the adhesion of the fragments of resin material to the polished surface, and making it easier to obtain a high polishing speed and a high boost effect for the resin material.

[0035] The weight-average molecular weight of the water-soluble polymer may be within the following ranges, from the viewpoint of easily obtaining a high polishing speed for the resin material and easily obtaining a high boost effect: The weight-average molecular weight of the water-soluble polymer may be 1000 or more, 3000 or more, 5000 or more, 6000 or more, 7000 or more, 8000 or more, or 9000 or more. The weight-average molecular weight of the water-soluble polymer may be 100000 or less, 50000 or less, 30000 or less, 20000 or less, 15000 or less, 12000 or less, or 11000 or less. From these perspectives, the weight-average molecular weight of water-soluble polymers may be 1,000 to 100,000, 1,000 to 30,000, 1,000 to 15,000, 1,000 to 11,000, 5,000 to 100,000, 5,000 to 30,000, 5,000 to 15,000, 5,000 to 11,000, 7,000 to 100,000, 7,000 to 30,000, 7,000 to 15,000, 7,000 to 11,000, 9,000 to 100,000, 9,000 to 30,000, 9,000 to 15,000, or 9,000 to 11,000. The weight-average molecular weight of vinyl polymers and polyvinylpyrrolidone may be within the above ranges.

[0036] The weight-average molecular weight can be measured, for example, using gel permeation chromatography (GPC) under the following conditions. Sample: 20 μL Standard polyethylene glycol: Polymer Laboratory Co., Ltd., standard polyethylene glycol (molecular weight: 106, 194, 440, 600, 1470, 4100, 7100, 10300, 12600, and 23000) Detector: Resona Corporation, RI-Monitor, product name "Shodex-RI SE-61" Pump: Hitachi, Ltd., product name "L-6000" Column: Resona Corporation product names "GS-220HQ" and "GS-620HQ" linked in this order Eluent: 0.4 mol / L sodium chloride aqueous solution Measurement temperature: 30°C Flow rate: 1.00 mL / min Measurement time: 45 min

[0037] The content of water-soluble polymers may be within the following ranges based on the total mass of the slurry, from the viewpoint of easily obtaining a high polishing speed for the resin material and easily obtaining a high boost effect: The content of water-soluble polymers may be 0.01% by mass or more, 0.05% by mass or more, 0.1% by mass or more, 0.2% by mass or more, 0.3% by mass or more, 0.4% by mass or more, or 0.5% by mass or more. The content of water-soluble polymers may be 5% by mass or less, 3% by mass or less, 1% by mass or less, 0.8% by mass or less, 0.7% by mass or less, 0.6% by mass or less, or 0.5% by mass or less. From these viewpoints, the content of water-soluble polymers may be 0.01 to 5% by mass, 0.01 to 1% by mass, 0.01 to 0.7% by mass, 0.1 to 5% by mass, 0.1 to 1% by mass, 0.1 to 0.7% by mass, 0.3 to 5% by mass, 0.3 to 1% by mass, or 0.3 to 0.7% by mass. The content of vinyl polymers and polyvinylpyrrolidone may be within the above ranges.

[0038] The mass ratio of the water-soluble polymer content to the abrasive content (water-soluble polymer content / abrasive content) may be within the following ranges from the viewpoint of easily obtaining a high polishing speed for the resin material and easily obtaining a high boost effect. The mass ratio may be 0.01 or more, 0.05 or more, 0.1 or more, 0.3 or more, 0.4 or more, or 0.5 or more. The mass ratio may be 20 or less, 10 or less, 5 or less, 1 or less, 0.7 or less, or 0.5 or less. From these viewpoints, the mass ratio may be 0.01 to 20, 0.01 to 5, 0.01 to 1, 0.01 to 0.7, 0.1 to 20, 0.1 to 5, 0.1 to 1, 0.1 to 0.7, 0.4 to 20, 0.4 to 5, 0.4 to 1, or 0.4 to 0.7. The mass ratio of the vinyl polymer content to the abrasive content (vinyl polymer content / abrasive content), and the mass ratio of the polyvinylpyrrolidone content to the abrasive content (polyvinylpyrrolidone content / abrasive content) may be within the ranges described above.

[0039] [Organic Acid Components] The slurry according to this embodiment may contain organic acid components. Examples of organic acid components include organic acids and their salts (for example, alkali metal salts such as sodium salts; alkaline earth metal salts such as calcium salts). By using organic acid components, the resin material is modified, making it easier to obtain a high polishing speed and a high boost effect for the resin material.

[0040] Examples of organic acids include saturated fatty acids such as formic acid, acetic acid, and propionic acid; dicarboxylic acids such as malonic acid, succinic acid, glutaric acid, and adipic acid; hydroxy acids such as malic acid and citric acid; and amino acids, which will be discussed later.

[0041] The slurry may contain at least one amino acid component selected from the group consisting of amino acids and amino acid derivatives, from the viewpoint of easily obtaining a high polishing speed for resin materials and easily obtaining a high boost effect. Amino acids are compounds that have both an amino group and a carboxyl group as functional groups. Examples of amino acid derivatives include amino acid esters, amino acid salts, peptides, etc. The amino acid component can be used as a pH adjuster to adjust the pH of the slurry.

[0042] The amino acid components include glycine, α-alanine, β-alanine (also known as 3-aminopropanoic acid), 2-aminobutyric acid, norvaline, valine, leucine, norleucine, isoleucine, alloisoleucine, phenylalanine, proline, sarcosine, ornithine, lysine, serine, threonine, allothreonine, homoserine, tyrosine, 3,5-diiodotyrosine, β-(3,4-dihydroxyphenyl)-alanine, thyroxine, 4-hydroxyproline, cysteine, methionine, ethionine, lanthionine, cystathionine, cystine, and cysteine. Examples include acids, aspartic acid, glutamic acid, S-(carboxymethyl)-cysteine, 4-aminobutyric acid, asparagine, glutamine, azacerin, arginine, canavanine, citrulline, δ-hydroxylysine, creatine, kynurenine, histidine, 1-methylhistidine, 3-methylhistidine, ergothioneine, tryptophan, glycylglycine, glycylglycylglycine, vasopressin, oxytocin, cassinin, eledoisin, glucagon, secretin, proopiomelanocortin, enkephalin, prodinorphine, etc. The amino acid component may include glycine from the viewpoint of easily obtaining a high polishing speed for resin materials and easily obtaining a high boost effect.

[0043] The glycine content in the organic acid component or amino acid may be 50% by mass or more, more than 50% by mass, 60% by mass or more, 70% by mass or more, 80% by mass or more, 90% by mass or more, 95% by mass or more, 98% by mass or more, or 99% by mass or more, based on the total mass of the organic acid component or amino acid (total amino acids contained in the slurry), from the viewpoint of easily obtaining a high polishing speed of the resin material and easily obtaining a high boost effect. The organic acid component or amino acid may consist of glycine (substantially 100% by mass of the organic acid component or amino acid contained in the slurry is glycine).

[0044] From the viewpoints of easily obtaining a high polishing rate for a resin material and easily obtaining a high boosting effect, the content of the organic acid component may fall within the following range based on the total mass of the slurry. The content of the organic acid component may be 0.001% by mass or more, 0.005% by mass or more, 0.01% by mass or more, 0.05% by mass or more, 0.1% by mass or more, 0.2% by mass or more, 0.3% by mass or more, 0.4% by mass or more, or 0.5% by mass or more. The content of the organic acid component may be 10% by mass or less, 5% by mass or less, 3% by mass or less, 1% by mass or less, 0.8% by mass or less, 0.7% by mass or less, 0.6% by mass or less, or 0.5% by mass or less. From these viewpoints, the content of the organic acid component may be 0.001 to 10% by mass, 0.005 to 5% by mass, 0.01 to 3% by mass, 0.1 to 1% by mass, or 0.3 to 0.8% by mass. The content of the amino acid component and the content of glycine may fall within the above ranges.

[0045] From the viewpoints of easily obtaining a high polishing rate for a resin material and easily obtaining a high boosting effect, the mass ratio of the content of the organic acid component to the content of abrasive grains (content of organic acid component / content of abrasive grains) may fall within the following range. The mass ratio may be 0.01 or more, 0.05 or more, 0.1 or more, 0.3 or more, 0.4 or more, or 0.5 or more. The mass ratio may be 20 or less, 10 or less, 5 or less, 1 or less, 0.7 or less, or 0.5 or less. From these viewpoints, the mass ratio may be 0.01 to 20, 0.01 to 5, 0.01 to 1, 0.01 to 0.7, 0.1 to 20, 0.1 to 5, 0.1 to 1, 0.1 to 0.7, 0.4 to 20, 0.4 to 5, 0.4 to 1, or 0.4 to 0.7. The mass ratio of the content of the amino acid component to the content of abrasive grains (content of amino acid component / content of abrasive grains) and the mass ratio of the content of glycine to the content of abrasive grains (content of glycine / content of abrasive grains) may fall within the above ranges.

[0046] The mass ratio of the content of the organic acid component to the content of the water-soluble polymer (content of organic acid component / content of water-soluble polymer) may fall within the following range from the viewpoints of easily obtaining a high polishing rate for a resin material and easily obtaining a high boosting effect. The mass ratio may be 0.01 or more, 0.05 or more, 0.1 or more, 0.5 or more, or 1 or more. The mass ratio may be 20 or less, 10 or less, 5 or less, 2 or less, or 1 or less. From these viewpoints, the mass ratio may be 0.01 to 20, 0.05 to 10, 0.1 to 5, or 0.5 to 2. The mass ratio of the content of the amino acid component to the content of the water-soluble polymer (content of amino acid / content of water-soluble polymer) and the mass ratio of the content of glycine to the content of abrasive grains (content of glycine / content of water-soluble polymer) may fall within the above-mentioned ranges.

[0047] [Organic Solvent] The slurry according to the present embodiment may contain an organic solvent (excluding compounds falling under the organic acid component). When the slurry contains an organic solvent, it becomes easier to obtain a high polishing rate for a resin material and a high boosting effect.

[0048] As the organic solvent, any solvent that can be mixed with water can be used. Examples of organic solvents include: carbonate esters such as ethylene carbonate, propylene carbonate, dimethyl carbonate, diethyl carbonate, and methyl ethyl carbonate; lactone compounds such as butyrolactone and propiolactone; glycol compounds such as ethylene glycol, propylene glycol, hexylene glycol, diethylene glycol, dipropylene glycol, triethylene glycol, and tripropylene glycol; and derivatives of glycol compounds such as ethylene glycol monomethyl ether, propylene glycol monomethyl ether, diethylene glycol monomethyl ether, dipropylene glycol monomethyl ether, triethylene glycol monomethyl ether, tripropylene glycol monomethyl ether, ethylene glycol monoethyl ether, and propylene glycol monoethyl ether. Glycol monoethers (e.g., glycol monoalkyl ethers) such as diethylene glycol monoethyl ether, dipropylene glycol monoethyl ether, triethylene glycol monoethyl ether, tripropylene glycol monoethyl ether, ethylene glycol monopropyl ether, propylene glycol monopropyl ether, diethylene glycol monopropyl ether, dipropylene glycol monopropyl ether, triethylene glycol monopropyl ether, tripropylene glycol monopropyl ether, ethylene glycol monobutyl ether, propylene glycol monobutyl ether, diethylene glycol monobutyl ether, dipropylene glycol monobutyl ether, triethylene glycol monobutyl ether, and tripropylene glycol monobutyl ether;Glycol diethers such as ethylene glycol dimethyl ether, propylene glycol dimethyl ether, diethylene glycol dimethyl ether, dipropylene glycol dimethyl ether, triethylene glycol dimethyl ether, tripropylene glycol dimethyl ether, ethylene glycol diethyl ether, propylene glycol diethyl ether, diethylene glycol diethyl ether, dipropylene glycol diethyl ether, triethylene glycol diethyl ether, tripropylene glycol diethyl ether, ethylene glycol dipropyl ether, propylene glycol dipropyl ether, diethylene glycol dipropyl ether, dipropylene glycol dipropyl ether, triethylene glycol dipropyl ether, tripropylene glycol dipropyl ether, ethylene glycol dibutyl ether, propylene glycol dibutyl ether, diethylene glycol dibutyl ether, dipropylene glycol dibutyl ether, triethylene glycol dibutyl ether, tripropylene glycol dibutyl ether, etc.; tetrahydrofuran, geo Ether compounds such as xane, dimethoxyethane, polyethylene oxide, ethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, and propylene glycol monomethyl ether acetate; alcohols such as methanol, ethanol, propanol, n-butanol, n-pentanol, n-hexanol, and isopropanol; 2-methoxyethanol, 2-ethoxyethanol, 2-(2-methoxy)ethoxyethanol, 2-(2-butoxyethoxy)ethanol, 2-propoxyethanol, and 2-butoxyethanol. Toxyethanol, 3-methoxy-3-methyl-1-butanol, 2-(methoxymethoxy)ethanol, 2-isopropoxyethanol, 2-butoxyethanol, 2-isopentyloxyethanol, 1-propoxy-2-propanol, 3-methoxy-3-methyl-1-butanol, 3-methoxy-1-butanol, 3-methoxy-3-methylbutanol, 1-methoxy-2-butanol, glycol monoethers and other alkoxy alcohols; acetone, methyl ethyl ketone and other ketones; phenol; dimethylformamide; N-methylpyrrolidone;Examples include ethyl acetate, ethyl lactate, and sulfolane.

[0049] The organic solvent may contain an alkoxy alcohol, and may also contain 3-methoxy-3-methyl-1-butanol, from the viewpoint of easily obtaining a high polishing speed for the resin material and easily obtaining a high boosting effect.

[0050] The content of the organic solvent may be within the following ranges based on the total mass of the slurry. The content of the organic solvent may be 0.001% by mass or more, 0.005% by mass or more, 0.01% by mass or more, 0.03% by mass or more, 0.05% by mass or more, 0.07% by mass or more, 0.08% by mass or more, 0.09% by mass or more, or 0.1% by mass or more, from the viewpoint of easily obtaining sufficient wettability of the slurry to the substrate, easily obtaining a high polishing speed of the resin material, and easily obtaining a high boost effect. The content of the organic solvent may be 10% by mass or less, 5% by mass or less, 3% by mass or less, 2% by mass or less, 1% by mass or less, 0.8% by mass or less, 0.5% by mass or less, 0.3% by mass or less, or 0.1% by mass or less, from the viewpoint of easily obtaining a high polishing speed of the resin material, easily obtaining a high boost effect, and easily reducing the possibility of ignition. From these perspectives, the content of the organic solvent may be 0.001 to 10% by mass, 0.01 to 3% by mass, 0.05 to 1% by mass, or 0.08 to 0.5% by mass. The content of 3-methoxy-3-methyl-1-butanol may be within the above range.

[0051] The mass ratio of the organic solvent content to the abrasive content (organic solvent content / abrasive content) may be within the following ranges from the viewpoint of easily obtaining a high polishing speed for the resin material and easily obtaining a high boost effect. The mass ratio may be 0.001 or more, 0.01 or more, 0.03 or more, 0.05 or more, 0.08 or more, or 0.1 or more. The mass ratio may be 5 or less, 2 or less, 1 or less, 0.5 or less, 0.3 or less, or 0.1 or less. From these viewpoints, the mass ratio may be 0.001 to 5, 0.001 to 1, 0.001 to 0.3, 0.03 to 5, 0.03 to 1, 0.03 to 0.3, 0.08 to 5, 0.08 to 1, or 0.08 to 0.3. The mass ratio of the 3-methoxy-3-methyl-1-butanol content to the abrasive grain content (3-methoxy-3-methyl-1-butanol content / abrasive grain content) may be within the range described above.

[0052] The mass ratio of the organic solvent content to the water-soluble polymer content (organic solvent content / water-soluble polymer content) may be within the following ranges from the viewpoint of easily obtaining a high polishing speed for the resin material and easily obtaining a high boost effect. The mass ratio may be 0.001 or more, 0.01 or more, 0.03 or more, 0.05 or more, 0.1 or more, or 0.2 or more. The mass ratio may be 5 or less, 2 or less, 1 or less, 0.5 or less, 0.3 or less, or 0.2 or less. From these viewpoints, the mass ratio may be 0.001 to 5, 0.001 to 1, 0.001 to 0.3, 0.03 to 5, 0.03 to 1, 0.03 to 0.3, 0.1 to 5, 0.1 to 1, or 0.1 to 0.3. The mass ratio of the content of 3-methoxy-3-methyl-1-butanol to the content of water-soluble polymers (content of 3-methoxy-3-methyl-1-butanol / content of water-soluble polymers) may be within the range described above.

[0053] The mass ratio of the organic solvent content to the organic acid content (organic solvent content / organic acid content) may be within the following ranges from the viewpoint of easily obtaining a high polishing speed for the resin material and easily obtaining a high boost effect. The mass ratio may be 0.001 or more, 0.01 or more, 0.03 or more, 0.05 or more, 0.1 or more, or 0.2 or more. The mass ratio may be 5 or less, 2 or less, 1 or less, 0.5 or less, 0.3 or less, or 0.2 or less. From these viewpoints, the mass ratio may be 0.001 to 5, 0.001 to 1, 0.001 to 0.3, 0.03 to 5, 0.03 to 1, 0.03 to 0.3, 0.1 to 5, 0.1 to 1, or 0.1 to 0.3. The mass ratio of the content of 3-methoxy-3-methyl-1-butanol to the content of organic acid components (content of 3-methoxy-3-methyl-1-butanol / content of organic acid components) may be within the range described above.

[0054] [Other Additives] The slurry according to this embodiment may contain additives other than the components described above. Examples of such additives include pH adjusters and polymer materials.

[0055] The slurry according to this embodiment may contain a basic component as a pH adjusting agent. Examples of basic components include sodium hydroxide, ammonia (e.g., aqueous ammonia), potassium hydroxide, calcium hydroxide, and the like.

[0056] The base component content may be within the following ranges based on the total mass of the slurry: The base component content may be greater than 0% by mass, 0.00001% by mass or more, 0.00005% by mass or more, 0.0001% by mass or more, 0.0005% by mass or more, 0.001% by mass or more, or 0.005% by mass or more. The base component content may be 10% by mass or less, 5% by mass or less, 1% by mass or less, 0.5% by mass or less, 0.1% by mass or less, or 0.05% by mass or less. The base component content may be greater than 0% by mass and less than or equal to 10% by mass, greater than 0% by mass and less than or equal to 1% by mass, greater than 0% by mass and less than or equal to 0.1% by mass, 0.00005 to 10% by mass, 0.00005 to 1% by mass, 0.00005 to 0.1% by mass, 0.001 to 10% by mass, 0.001 to 1% by mass, or 0.001 to 0.1% by mass.

[0057] (Water) The slurry according to this embodiment contains water. The water content in the slurry may be the remainder obtained by subtracting the content of other components from the total amount of slurry. The water content may be 50% by mass or more, 70% by mass or more, 80% by mass or more, or 90% by mass or more, based on the total mass of the slurry. The slurry according to this embodiment may be stored as a slurry storage liquid with a lower water content than that used during polishing. In this case, the slurry can be obtained by diluting the storage liquid with water during polishing.

[0058] (pH) The pH of the slurry according to this embodiment may be 7.0 or less, less than 7.0, 6.5 or less, 6.0 or less, less than 6.0, 5.5 or less, 5.3 or less, 5.2 or less, 5.1 or less, 5.0 or less, less than 5.0, 4.9 or less, 4.8 or less, 4.7 or less, or 4.6 or less, from the viewpoint of easily obtaining a high polishing speed of the resin material and easily obtaining a high boost effect. The pH of the slurry may be 1.0 or more, 1.2 or more, 1.5 or more, 2.0 or more, 2.5 or more, 3.0 or more, greater than 3.0, 3.5 or more, 4.0 or more, greater than 4.0, 4.1 or more, 4.2 or more, 4.3 or more, 4.4 or more, 4.5 or more, greater than 4.5, or 4.6 or more, from the viewpoint of easily obtaining a high polishing speed of the resin material and easily obtaining a high boost effect. From these perspectives, the pH of the slurry may be 1.0–7.0, 1.0–6.0, 1.0–5.0, 1.0–4.6, 2.0–7.0, 2.0–6.0, 2.0–5.0, 2.0–4.6, 3.0–7.0, 3.0–6.0, 3.0–5.0, 3.0–4.6, 4.0–7.0, 4.0–6.0, 4.0–5.0, or 4.0–4.6. The pH of the slurry is defined as the pH at a liquid temperature of 25°C.

[0059] The pH of the slurry according to this embodiment can be measured using a pH meter (for example, a Model (F-51) manufactured by Horiba, Ltd.). For example, the pH meter is calibrated at three points using phthalate pH standard solution (pH: 4.01), neutral phosphate pH standard solution (pH: 6.86), and borate pH standard solution (pH: 9.18) as calibration solutions. After that, the electrode of the pH meter is placed in the slurry, and the value is measured after it has stabilized for at least two minutes. At this time, the temperature of the calibration solution and the slurry should be 25°C.

[0060] <Polishing Method> The polishing method according to this embodiment comprises a polishing step of polishing a resin material using a slurry according to this embodiment. In the polishing step, the surface to be polished, including the resin material, may be polished using the slurry according to this embodiment, or the surface to be polished of a material to be polished, including the resin material, may be polished. In the polishing step, the surface to be polished of a hard mask, including the resin material, may be polished using the slurry according to this embodiment. In the polishing step, the surface to be polished, including the metal material, may be polished using the slurry according to this embodiment, or the surface to be polished of a material to be polished, including the metal material, may be polished. The slurry used in the polishing step may be a slurry obtained by diluting a storage liquid with water. The surface to be polished may have a layer containing at least one selected from the group consisting of resin material and metal material.

[0061] In the polishing process, for example, the surface to be polished of the substrate is pressed against the polishing cloth of the polishing platen, and while a predetermined pressure is applied to the substrate from the side opposite to the surface to be polished (the back side of the substrate), the slurry according to this embodiment is supplied between the surface to be polished of the substrate and the polishing cloth, and the surface to be polished can be polished by moving the substrate relative to the polishing platen.

[0062] As a polishing apparatus, for example, when polishing with an abrasive cloth, a general polishing apparatus can be used that has a holder capable of holding the substrate to be polished, and a polishing platen to which an abrasive cloth can be attached, connected to a motor with a changeable rotation speed. As for the abrasive cloth, general nonwoven fabrics, foamed polyurethane, porous fluororesin, etc. can be used, and there are no particular restrictions.

[0063] There are no restrictions on the polishing conditions, but the rotation speed of the polishing platen should be 200 rpm (rpm = min) to prevent the base material from flying off. －１ The rotation speed may be as low as ) or less. The pressure applied to the polishing cloth by the substrate (such as a semiconductor substrate) having the surface to be polished may be 1 to 100 kPa or 5 to 50 kPa, from the viewpoint of easily satisfying uniformity of polishing speed within the polished surface and flatness of the pattern. During polishing, slurry can be continuously supplied to the polishing cloth by a pump or the like. There is no limit to the amount supplied, but the surface of the polishing cloth may always be covered with slurry.

[0064] To ensure that the surface condition of the polishing cloth remains constant during polishing (CMP, etc.), a conditioning step for the polishing cloth may be performed before polishing. For example, the polishing cloth can be conditioned using a dresser with diamond particles and a liquid containing at least water. Subsequently, after performing the polishing method according to this embodiment, a substrate cleaning step may be further performed. After polishing, the substrate may be thoroughly washed in running water, and then dried after removing any water droplets adhering to the substrate using a spin dryer or the like. Alternatively, a known cleaning method (for example, a method in which a commercially available cleaning solution is poured onto the substrate surface while a polyurethane brush is rotated and pressed against the substrate with constant pressure to remove any adhering material) may be performed before drying.

[0065] The slurry and polishing method according to this embodiment may be applied not only to film-like objects to be polished, but also to various substrates made of glass, silicon, SiC, SiGe, Ge, GaN, GaP, GaAs, sapphire, plastic, etc.

[0066] The slurry and polishing method according to this embodiment can be used not only for the manufacture of semiconductor devices, but also for the manufacture of image display devices such as TFT liquid crystals and organic ELs; optical components such as photomasks, lenses, prisms, optical fibers, and single-crystal scintillators; optical elements such as optical switching elements and optical waveguides; light-emitting elements such as solid-state lasers and blue laser LEDs; and magnetic storage devices such as magnetic disks and magnetic heads.

[0067] <Manufacturing Method, etc.> The manufacturing method of the component according to this embodiment includes a component manufacturing step of obtaining a component using a substrate (a member to be polished) polished by the polishing method according to this embodiment. The component according to this embodiment is a component obtained by the manufacturing method of the component according to this embodiment. The component according to this embodiment is not particularly limited, but may be an electronic component (for example, a semiconductor component such as a semiconductor package), a wafer (for example, a semiconductor wafer), or a chip (for example, a semiconductor chip). As one embodiment of the manufacturing method of the component according to this embodiment, in the manufacturing method of an electronic component according to this embodiment, an electronic component is obtained using a substrate polished by the polishing method according to this embodiment. As one embodiment of the manufacturing method of the component according to this embodiment, in the manufacturing method of a semiconductor component according to this embodiment, a semiconductor component (for example, a semiconductor package) is obtained using a substrate polished by the polishing method according to this embodiment. The manufacturing method of the component according to this embodiment may include a polishing step of polishing the substrate by the polishing method according to this embodiment before the component manufacturing step.

[0068] The method for manufacturing a component according to this embodiment may include, as one aspect of the component manufacturing process, a piece-forming step of dividing the substrate (a member to be polished) polished by the polishing method according to this embodiment into individual pieces. The piece-forming step may be, for example, a step of dicing a wafer (e.g., a semiconductor wafer) polished by the polishing method according to this embodiment to obtain a chip (e.g., a semiconductor chip). As one aspect of the method for manufacturing a component according to this embodiment, the method for manufacturing an electronic component according to this embodiment may include a step of obtaining an electronic component (e.g., a semiconductor component) by dividing the substrate polished by the polishing method according to this embodiment into individual pieces. As one aspect of the method for manufacturing a component according to this embodiment, the method for manufacturing a semiconductor component according to this embodiment may include a step of obtaining a semiconductor component (e.g., a semiconductor package) by dividing the substrate polished by the polishing method according to this embodiment into individual pieces.

[0069] The method for manufacturing a part according to this embodiment may include, as one aspect of the part manufacturing process, a connection step of connecting (for example, electrically connecting) a substrate (a member to be polished) polished by the polishing method according to this embodiment to another connected body. The connected body connected to the substrate polished by the polishing method according to this embodiment is not particularly limited and may be the substrate polished by the polishing method according to this embodiment, or it may be a connected body different from the substrate polished by the polishing method according to this embodiment. In the connection step, the substrate and the connected body may be directly connected (connected in a state where the substrate and the connected body are in contact), or they may be connected via another member (such as a conductive member). The connection step can be performed before the individualization step, after the individualization step, or before and after the individualization step.

[0070] The connection step may be a step of connecting the polished surface of the base body, which has been polished by the polishing method according to this embodiment, with the connected body, or it may be a step of connecting the connecting surface of the base body, which has been polished by the polishing method according to this embodiment, with the connecting surface of the connected body. The connecting surface of the base body may be the polished surface, which has been polished by the polishing method according to this embodiment. A connected body comprising a base body and a connected body can be obtained by the connection step. In the connection step, if the connecting surface of the base body has a metal part, the connected body may be brought into contact with the metal part. In the connection step, if both the connecting surface of the base body and the connecting surface of the connected body have metal parts, the metal parts may be brought into contact with each other. The metal part may contain copper.

[0071] The device according to this embodiment (for example, an electronic device such as a semiconductor device) comprises a substrate polished by the polishing method according to this embodiment, and at least one selected from the group consisting of components according to this embodiment.

[0072] The present disclosure will be further described below with reference to examples, but the present disclosure is not limited to these examples without departing from the technical concept of the present disclosure.

[0073] <Preparation of Slurry> Abrasive particles (commercially available alumina particles, with average aspect ratio and average particle size as shown in Tables 1 and 2) were mixed with deionized water. Then, PVP (polyvinylpyrrolidone, K-17, weight-average molecular weight: 10000) was added as a water-soluble polymer, glycine as an organic acid component, and MMB (3-methoxy-3-methyl-1-butanol) as an organic solvent to obtain a slurry. Based on the total mass of the slurry, the abrasive particle content (content of alumina particles, which are the solid component) was 1% by mass, the PVP content was 0.5% by mass (content of water-soluble polymer: 0.5% by mass), the glycine content was 0.5% by mass, and the MMB content was 0.1% by mass.

[0074] <Measurement of the Average Aspect Ratio of Alumina Particles> The average aspect ratio of alumina particles was determined by FE-SEM observation. Alumina particles were placed on a 3 mm square silicon wafer piece that had been washed with ethanol, and the silicon wafer piece was fixed to the sample stage with conductive double-sided tape. The FE-SEM observation overvoltage was set to 2.0 kV, and observation was performed at a magnification such that approximately 50 alumina particles, both with their major and minor axes visible in one field of view, were observed, and observation images were obtained. Observation images were acquired in four arbitrary fields of view, and the major and minor axes of a total of 100 to 200 alumina particles were measured to calculate the aspect ratio of each alumina particle. The average aspect ratio was calculated by averaging the observed alumina particles.

[0075] <Measurement of average particle size of abrasive grains> The average particle size of the abrasive grains (alumina particles) in the slurry was measured using a laser diffraction / scattering particle size distribution analyzer (manufactured by Microtrac BEL Corp., product name: Microtrac MT3300EXII). The results showed that there was no change in the average particle size of the abrasive grains before and after slurry preparation in all examples.

[0076] <pH Measurement> The pH of the slurry described above was measured using a pH meter called "Model (F-51)" manufactured by Horiba, Ltd. Specifically, the pH meter was calibrated at three points using phthalate pH standard solution (pH: 4.01), neutral phosphate pH standard solution (pH: 6.86), and borate pH standard solution (pH: 9.18) as calibration solutions. After that, the pH meter electrode was placed in the slurry, and the value was measured after it had stabilized for more than two minutes. The temperature of the calibration solutions and slurry was 25°C. The results are shown in Tables 1 and 2.

[0077] <Measurement of Polishing Speed> A 12-inch diameter substrate was prepared as an evaluation test wafer, having a 10 μm thick polyimide resin layer (HD7000 series, manufactured by HD Microsystems) on a silicon substrate. The polyimide resin layer was polished (CMP) using the slurry described above under the following polishing conditions. The difference in thickness of the polyimide resin layer before and after polishing was measured using an optical film thickness gauge (Filmetrics, F54-UV), and the polishing speed of the polyimide resin was calculated based on the difference in thickness of the polyimide resin layer and the polishing time. The results are shown in Tables 1 and 2.

[0078] [Polishing Conditions] Polishing machine: F-REX300X (manufactured by Ebara Corporation) Polishing pad: IK4250H (manufactured by DuPont) Polishing pressure: 20.7 kPa (3 psi) Plate rotation speed: 87 rpm Head rotation speed: 93 rpm Slurry supply rate: 300 mL / min Polishing time: 30 seconds

[0079] <Evaluation of Boost Effect> An evaluation slurry was prepared by replacing the entire amount of water-soluble polymer in the slurry described above with water. Using the evaluation slurry, polyimide resin was polished under the polishing conditions described above, and the difference in the thickness of the polyimide resin layer before and after polishing was measured. The polishing speed of the polyimide resin was calculated based on the difference in the thickness of the polyimide resin layer and the polishing time. The ratio of the polishing speed of the slurry containing water-soluble polymer to the polishing speed of the evaluation slurry (polishing speed of the slurry containing water-soluble polymer / polishing speed of the evaluation slurry) was calculated as the boost ratio. A higher boost ratio indicates better compatibility between the specific abrasive grain and the specific water-soluble polymer, and a higher boost effect. The results are shown in Tables 1 and 2.

[0080]

[0081]

Claims

1. A slurry containing abrasive grains containing alumina particles, a water-soluble polymer, and water, wherein the average particle size of the alumina particles is 2000 nm or less, and the average aspect ratio of the alumina particles is 1.20 or more.

2. The slurry according to claim 1, wherein the average particle size is 500 nm or more.

3. The slurry according to claim 1, wherein the average aspect ratio is 2.00 or less.

4. The slurry according to claim 1, wherein the water-soluble polymer contains polyvinylpyrrolidone.

5. The slurry according to claim 1, wherein the content of the water-soluble polymer is 0.1 to 5% by mass.

6. The slurry according to claim 1, further containing an organic acid component.

7. The slurry according to claim 6, wherein the organic acid component includes an amino acid component.

8. The slurry according to claim 6, wherein the content of the organic acid component is 0.1 to 5% by mass.

9. The slurry according to claim 1, further comprising an organic solvent.

10. The slurry according to claim 9, wherein the organic solvent comprises 3-methoxy-3-methyl-1-butanol.

11. The slurry according to claim 1, wherein the pH is 1.0 to 7.

0.

12. A polishing method comprising the step of polishing a member to be polished using a slurry described in any one of claims 1 to 11.

13. The polishing method according to claim 12, wherein the member to be polished includes a polyimide resin.

14. A method for manufacturing a part, comprising the step of obtaining a part using the member to be polished by the polishing method described in claim 12.

15. A method for manufacturing a semiconductor component, comprising the step of obtaining a semiconductor component using the member to be polished by the polishing method described in claim 12.

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