Multilayer ceramic capacitor

Abstract

Provided is a highly reliable multilayer ceramic capacitor.　A laminate 10 has a first inner electrode 30A having one end exposed on a third surface F3, a second inner electrode 30B having one end exposed on a fourth surface F4, and a dielectric layer 20 containing at least one element of Mg and Mn. In a cross section which is parallel to the laminating direction T and a second direction W and in which an end part of the second inner electrode 30B in the second direction W is located on the fifth surface F5 side as compared to the first inner electrode 30A, the total contained amount of Mg and Mn in a region R15 located within a distance of 5 µm or less from an end part of the first inner electrode 30A on the fifth surface F5 side in the second direction W is more than the total contained amount of Mg and Mn in a region R2C located within a distance of 5 µm or less from the center of the first inner electrode 30A in the second direction W.

Description

Multilayer Ceramic Capacitor

[0001] The present invention relates to a multilayer ceramic capacitor.

[0002] Conventionally, in multilayer ceramic capacitors, internal electrodes have been formed into a shape (racket shape) in which the width of the lead portion is narrower than the width of the opposing portion. It is known that the racket-shaped internal electrode can lengthen the path for moisture intrusion from the outside to the internal electrode, thereby improving the moisture resistance of the multilayer ceramic capacitor (for example, Patent Document 1).

[0003] Japanese Patent Application Laid-Open No. 2012-94820

[0004] In a multilayer ceramic capacitor including a racket-shaped internal electrode, when viewed in the lamination direction, ends of the internal electrodes may be perpendicular to each other. In this case, in the vicinity where ends of the internal electrodes are perpendicular to each other when viewed in the lamination direction, there is a possibility that reliability may decrease due to electric field concentration.

[0005] An object of the present invention is to provide a multilayer ceramic capacitor with excellent reliability.

[0006] In order to solve the above problem, the multilayer ceramic capacitor of the present invention includes: a laminated body having a first surface and a second surface opposing each other in the lamination direction, a third surface and a fourth surface opposing each other in a first direction perpendicular to the lamination direction, and a fifth surface and a sixth surface opposing each other in a second direction perpendicular to both the lamination direction and the first direction; a first external electrode disposed on the third surface; and a second external electrode disposed on the fourth surface, wherein the laminated body includes a first internal electrode having one end exposed on the third surface, a second internal electrode having one end exposed on the fourth surface, and a dielectric layer containing at least one element selected from Mg and Mn; and in a cross section parallel to the lamination direction and the second direction, where an end of the second internal electrode in the second direction is located closer to the fifth surface than the first internal electrode, the total content of Mg and Mn in a region within 5 µm from the end of the first internal electrode on the fifth surface side is greater than the total content of Mg and Mn in a region within 5 µm from the center of the first internal electrode in the second direction.

[0007] This allows us to provide highly reliable multilayer ceramic capacitors.

[0008] This is a schematic perspective view of a multilayer ceramic capacitor according to an embodiment. This is a cross-sectional view taken along line II-II in Figure 1. This is a cross-sectional view taken along line III-III in Figure 1. This is a cross-sectional view taken along line IV-IV in Figure 1. This is a cross-sectional view taken along line V-V in Figure 1. This is a diagram corresponding to Figure 4, showing the overlap of the internal electrodes. This is a cross-sectional view taken along line VII-VII in Figures 1 and 6. This is a cross-sectional view taken along line VIII-VIII in Figures 1 and 6. This is a cross-sectional view taken along line XI-XI in Figures 1 and 6. This is a diagram corresponding to Figure 6, showing a modified example of the overlap of the internal electrodes.

[0009] The multilayer ceramic capacitor 1 according to an embodiment of the present invention will be described below with reference to Figures 1 to 6. As will be described in more detail later, the multilayer ceramic capacitor 1 is a multilayer ceramic capacitor equipped with racket-shaped internal electrodes (see Figures 4 to 6).

[0010] (Multilayer ceramic capacitor 1) As shown in Figures 1 to 3, the multilayer ceramic capacitor 1 comprises a substantially rectangular parallelepiped laminate 10 and a pair of external electrodes 40 provided at both ends of the laminate 10. The laminate 10 also includes an effective portion 11 which contains multiple sets of dielectric layers 20 and internal electrodes 30.

[0011] In the following description, the stacking direction T is used to describe the orientation of the multilayer ceramic capacitor 1, with the direction perpendicular to the mounting surface being defined as the stacking direction. In this embodiment, the stacking direction T is defined as the direction in which the internal electrodes 30 and the dielectric layer 20 are stacked.

[0012] Furthermore, the direction in which the pair of external electrodes 40 are provided is defined as the first direction L. The direction that intersects both the first direction L and the stacking direction T is defined as the second direction W. Within the first direction L, the direction that moves away from the center of the multilayer ceramic capacitor 1 in the first direction L is defined as the "outside of the first direction L," and within the first direction L, the direction that moves closer to the center of the multilayer ceramic capacitor 1 in the first direction L is defined as the "inside of the first direction L." In this embodiment, the first direction L, the second direction W, and the stacking direction T are orthogonal to each other. In this case, the direction in which the internal electrodes 30 and the dielectric layer 20 are stacked may be defined as the direction horizontal to the mounting surface, and the stacking direction T may be defined as the direction perpendicular to the direction in which the internal electrodes 30 and the dielectric layer 20 are stacked.

[0013] The cross-section of the multilayer ceramic capacitor 1 parallel to the stacking direction T and the first direction L is called the "LT cross-section". The cross-section in Figure 2 is the LT cross-section passing through the center of the multilayer ceramic capacitor 1 in the second direction W. The cross-section of the multilayer ceramic capacitor 1 parallel to the stacking direction T and the second direction W is called the "WT cross-section". The cross-section in Figure 3 is the WT cross-section passing through the center of the multilayer ceramic capacitor 1 in the first direction L. The cross-section of the multilayer ceramic capacitor 1 parallel to the first direction L and the second direction W is called the "LW cross-section". The cross-section in Figure 4 is the LW cross-section with the first internal electrode 30A exposed. The cross-section in Figure 5 is the LW cross-section with the second internal electrode 30B exposed.

[0014] The dimensions of the multilayer ceramic capacitor 1 in the first direction L are, for example, 0.2 mm to 5.6 mm, preferably 1.6 mm to 3.2 mm. The dimensions of the multilayer ceramic capacitor 1 in the second direction W are, for example, 0.1 mm to 5.0 mm, preferably 0.8 mm to 2.5 mm. The dimensions of the multilayer ceramic capacitor 1 in the stacking direction T are, for example, 0.1 mm to 2.5 mm, preferably 0.8 mm to 2.5 mm. The external dimensions of the multilayer ceramic capacitor 1 can be measured with a micrometer.

[0015] The configuration of the multilayer ceramic capacitor 1 is, for example, substantially symmetrical in the second direction W. For this reason, the description of one side of the multilayer ceramic capacitor 1 in the second direction W may be given, while the description of the other side of the multilayer ceramic capacitor 1 in the second direction W may be omitted.

[0016] (Laminate 10) The laminate 10 has a first surface F1 and a second surface F2 facing the lamination direction T, a third surface F3 and a fourth surface F4 facing the first direction L, and a fifth surface F5 and a sixth surface F6 facing the second direction W.

[0017] The portion where three outer surfaces of the laminate 10 intersect is called a "corner." The portion where two outer surfaces of the laminate 10 intersect is called a "ridge." It is preferable that the corners and ridges of the laminate 10 are rounded.

[0018] The laminate 10 has an effective portion 11 and an ineffective portion 12.

[0019] (Effective portion) The effective portion 11 is a region in which the dielectric layer 20 and the internal electrode 30 are stacked.

[0020] (Dielectric layer) The dielectric layer 20 preferably contains a perovskite-type compound such as BaTiO3, CaTiO3, SrTiO3, or CaZrO3 as its main component. The dielectric layer 20 contains Mg, Mn, Si, etc. as additives. The dielectric layer 20 may further contain Li, Na, etc.

[0021] The dielectric layer 20 contains dielectric grains. The dielectric grains include, for example, core-shell particles. Core-shell particles are particles that have a structure (core-shell structure) in which at least a portion of the minor components are solid-dissolved at a high concentration in the surface layer (shell layer) of the particle, and the minor components are solid-dissolved at a low concentration or not solid-dissolved in the central part (core) of the particle.

[0022] (Internal electrodes) The internal electrodes 30 have a plurality of first internal electrodes 30A and a plurality of second internal electrodes 30B.

[0023] The first internal electrode 30A and the second internal electrode 30B are arranged alternately, for example. The first internal electrode 30A and the second internal electrode 30B face each other in the stacking direction T, with the dielectric layer 20 in between. The first internal electrode 30A is exposed on the third surface F3. The first internal electrode 30A is electrically connected to the first external electrode 40A. The second internal electrode 30B is exposed on the fourth surface F4. The second internal electrode 30B is electrically connected to the second external electrode 40B. Charge accumulates between the opposing portions 52 of the first internal electrode 30A and the second internal electrode 30B that are adjacent in the stacking direction T, and they function as a capacitor.

[0024] The first internal electrode 30A and the second internal electrode 30B are sometimes collectively referred to as "internal electrode 30". Of the multiple internal electrodes 30, the one closest to the first surface F1 may be either the first internal electrode 30A or the second internal electrode 30B.

[0025] The internal electrode 30 is mainly composed of Ni, for example. However, it is not limited to this, and the internal electrode 30 may be formed from metallic materials such as Cu, Ag, Pd, Ag-Pd alloy, or Au. In addition, the internal electrode 30 may also contain BT particles (particles containing Ba and Ti) as a co-material.

[0026] The thickness of the internal electrode 30 is preferably 0.3 μm or more. The crystallite diameter of the Ni particles contained in the internal electrode 30 in the direction perpendicular to the stacking direction T is preferably 300 nm or more and 5000 nm or less.

[0027] The crystallite size is calculated, for example, by the crystallite size in the first direction L if the diameter in the direction perpendicular to the thickness in the stacking direction T (for example, the first direction L) is longer.

[0028] As shown in Figure 4, the first internal electrode 30A has a 1-1 region 31A and a 1-2 region 32A which is shorter in the second direction W than the 1-1 region 31A and is located on the third surface F3 side than the 1-1 region 31A. The shape of the first internal electrode 30A is racket-shaped.

[0029] The entirety of the first-first region 31A is spaced apart from the outer surface of the laminate 10. The shape of the first-first region 31A in view in the lamination direction T is, for example, approximately rectangular.

[0030] The dimension of the first-second region 32A in the second direction W decreases, for example, as you move from the fourth surface F4 side towards the third surface F3 side, and then remains constant. However, it is not limited to this, and the dimension of the first-second region 32A in the second direction W may be constant over the entire first-second region 32A, or it may decrease over the entire first-second region 32A as you move from the fourth surface F4 side towards the third surface F3 side.

[0031] The average dimension in the second direction W of the portion of the first-second region 32A exposed on the third surface F3 is shorter than the average dimension in the second direction W of the first-first region 31A, preferably 50% to 90% of the average dimension in the second direction W of the first-first region 31A. The average dimension in the second direction W of the portion of the first-second region 32A exposed on the third surface F3 is the average value of the second direction W of the first internal electrode 30A exposed on the same surface, and the average dimension in the second direction W of the first-first region 31A is the average value of the second direction W of the first internal electrode 30A located on the same plane parallel to the stacking direction T and the second direction W at a position halfway along the first direction L of the laminate 10.

[0032] It is preferable that the concentration of Sn in the first-second region 32A is higher than the concentration of Sn in the first-first region 31A. It is also preferable that an Sn layer is arranged in the first-second region 32A. The concentration of Sn in the first-second region 32A is the average peak intensity of TEM-EDX at three points in the first-second region 32A on a plane parallel to the stacking direction T and the second direction W at a position halfway along the first direction L of the first region 32A, and the concentration of Sn in the first-first region 31A is the average peak intensity of TEM-EDX at three points in the first-first region 32A on a plane parallel to the stacking direction T and the second direction W at a position halfway along the first direction L of the laminate 10.

[0033] When the end of the first-to-second region 32A in the second direction W and the second internal electrode 30B are perpendicular, it is thought that electric field concentration is likely to occur at the point where the end of the first-to-second region 32A in the second direction W and the second internal electrode 30B intersect, due to the overlap of internal electrodes 30 with different potentials. However, with this configuration, reliability can be improved at points where electric field concentration is likely to occur.

[0034] Furthermore, the Sn layer may also be placed in the first-1 region 31A. In that case, it is preferable that the thickness of the Sn layer placed in the first-2 region 32A is greater than the thickness of the Sn layer placed in the first-1 region 31A. If a large amount of Sn is included in the internal electrode 30 in order to increase the thickness of the Sn layer placed in the first-1 region 31A, the melting point of the internal electrode 30 will decrease, and in the firing process described later, the coverage of the internal electrode 30 will decrease due to oversintering of the internal electrode 30, which may cause the capacitance of the multilayer ceramic capacitor 1 to decrease excessively. By making the thickness of the Sn layer placed in the first-1 region 31A thinner than the thickness of the Sn layer placed in the first-2 region 32A, the influence of the Sn layer can be reduced in the first-1 region 31A, which is the region that mainly forms capacitance.

[0035] It is preferable that the coverage of the first-second region 32A is lower than the coverage of the first-first region 31A. It is preferable that the coverage of the first-second region 32A is 80% or more. This can suppress delamination. Coverage is calculated, for example, by dividing the area in which the first internal electrode 30A actually exists in the field of view in which the entire first internal electrode 30A is visible in the SEM on a plane parallel to the first direction L and the second direction W by the area enclosed by the contour of the first internal electrode 30A.

[0036] It is preferable that an Mg region is located at the end of the first-to-second region 32A in the second direction W. Specifically, it is preferable that the Mg region is located so as to extend from the first-to-second region 32A in the second direction W.

[0037] It is preferable that the thickness (dimension in the lamination direction T) of an Mg region arranged in a portion closer to the 1-1 region 31A among the end portions of the 1-2 region 32A in the second direction W is larger than the thickness of an Mg region arranged in a portion closer to the third surface F3 among the end portions of the 1-2 region 32A in the second direction W.

[0038] It is preferable that the area of an Mg region arranged in a portion closer to the 1-1 region 31A among the end portions of the 1-2 region 32A in the second direction W is larger than the area of an Mg region arranged in a portion closer to the third surface F3 among the end portions of the 1-2 region 32A in the second direction W. Specifically, when the 1-2 region 32A is equally divided into five parts in the first direction L, a cross section passing through the end portion in the second direction W of the 1-2 region 32A located at the most center in the first direction L, and a cross section passing through the end portion in the second direction W of the 1-2 region 32A located closer to the fourth surface F4 next to the region located closest to the third surface F3, each Mg region parallel to respective cross sections arranged on the internal electrode 30A is measured by SEM or the like, and the average value of the measurements is adopted.

[0039] It is preferable that the thickness of an Mg region arranged at the end portion of the 1-2 region 32A in the second direction W is larger than the thickness of an Mg region arranged at the end portion of the 1-1 region 31A in the second direction W.

[0040] It is preferable that the total number of Mg regions arranged at the end portion of the 1-2 region 32A in the second direction W is larger than the total number of Mg regions arranged at the end portion of the 1-1 region 31A in the second direction W.

[0041] With the above arrangement, when the end portion of the 1-2 region 32A in the second direction W and the second internal electrode 30B intersect perpendicularly, reliability can be improved at locations where electric field concentration is likely to occur.

[0042] The thickness of Mg regions arranged at the end portion of the 1-2 region 32A in the second direction W is an average value obtained when each Mg region is observed in an SEM image on a plane parallel to the lamination direction T and the second direction W at a position that is 1 / 2 of the 1-2 region 32A in the first direction L. In addition, the thickness of Mg regions arranged at the end portion of the 1-1 region 31A in the second direction W is an average value obtained when each Mg region is observed in an SEM image on a plane parallel to the lamination direction T and the second direction W at a position that is 1 / 2 of the laminate 10 in the first direction L.

[0043] More specifically, when the multilayer ceramic capacitor 1 is polished in the first direction L, first, the end portion in the second direction W of the first-second region 32A is exposed on the WT cross-section. On this WT cross-section at this time, the number of Mg regions relative to the number of first internal electrodes 30A, the thickness of each Mg region in the lamination direction T, the thickness of each Mg region in the second direction W, and the area at the end portion in the second direction W of the first-second region 32A are observed.

[0044] When polishing proceeds further, on the WT cross-section where the first-first region 31A is exposed, the number of Mg regions relative to the number of first internal electrodes 30A, the thickness of each Mg region in the lamination direction T, the thickness of each Mg region in the second direction W, and the area at the end portion in the second direction W of the first-first region 31A are observed.

[0045] In addition, for the thickness in the lamination direction T of Mg regions arranged in a certain range, the maximum value of the dimension in the lamination direction T of the Mg region is measured for each Mg region existing within the range, and the average value of the obtained values is taken. Further, for the thickness in the second direction W of Mg regions arranged in a certain range, the maximum value of the dimension in the second direction W of the Mg region is measured for each Mg region existing within the range, and the average value of the obtained values is taken.

[0046] It is preferable that the total content of Mg and Mn contained in the region between the first-second region 32A and the fifth surface F5 is higher than the total content of Mg and Mn contained in the region between the first-first region 31A and the fifth surface F5.

[0047] It is considered that sintering of the dielectric layers 20 is likely to be insufficient in the region between the first-second region 32A and the fifth surface F5, and the denseness of the dielectric layers 20 is likely to decrease. However, according to this configuration, the sinterability of the dielectric layers 20 can be improved and the denseness of the dielectric layers 20 can be enhanced in the region between the first-second region 32A and the fifth surface F5

[0048] The grain diameter D50 of the dielectric located in a region within 5 μm of the edge of the first-second region 32A in the second direction W is preferably smaller than the grain diameter D50 of the dielectric located in the central region when the region between the first-second region 32A and the second internal electrode 30B facing the stacking direction T is divided into five equal parts in the second direction W. To clarify the boundaries between grains, the grain diameter D50 was determined by heat treatment at 1000°C and observation of each region at 20,000x magnification using SEM. 100 grains were randomly extracted from the obtained SEM images, and the area of ​​the inner portion of the grain boundary of each grain was determined to calculate the equivalent circle diameter, from which the grain diameter D50 was calculated.

[0049] This improves reliability in locations where electric field concentration is likely to occur, when the end of the first-to-second region 32A in the second direction W and the second internal electrode 30B are approximately perpendicular to each other.

[0050] For example, in a WT cross-section, when the region sandwiched between the first-second region 32A and the second-first region 31B is divided into three equal parts in the second direction W, it is preferable that the grain diameter D50 of the dielectric grain located in the central region of the three regions is larger than the grain diameter D50 of the dielectric grain located in the region on the fifth surface F5 side of the three regions, or larger than the grain diameter D50 of the dielectric grain located in the region on the sixth surface F6 side of the three regions.

[0051] For example, in the LT cross section, when the region sandwiched between the first-second region 32A and the second-first region 31B is divided into three equal parts in the first direction L, it is preferable that at least one of the following conditions is met: the grain diameter D50 of the dielectric grain located in the central region of the three regions is greater than the grain diameter D50 of the dielectric grain located in the region on the third surface F3 side of the three regions, or the grain diameter D50 of the dielectric grain located in the region on the fourth surface F4 side of the three regions is greater than the grain diameter D50 of the dielectric grain located in the region on the third surface F3 side of the three regions.

[0052] This suppresses a decrease in capacitance in most of the area forming the capacitance when the end of the first-to-second region 32A in the second direction W and the second internal electrode 30B are approximately perpendicular, thereby improving reliability in areas where electric field concentration is likely to occur.

[0053] As shown in Figure 5, the second internal electrode 30B has a 2-1 region 31B and a 2-2 region 32B which is shorter in the second direction W than the 2-1 region 31B and is located on the fourth surface F4 side than the 2-1 region.

[0054] The entirety of the second-first region 31B is spaced apart from the outer surface of the laminate 10. The shape of the second-first region 31B in view in the stacking direction T is, for example, approximately rectangular. The second-first region 31B faces the first-first region 31A in the stacking direction T, with the dielectric layer 20 in between.

[0055] The dimension of the second direction W of the second-second region 32B decreases as you move from the third surface F3 side towards the fourth surface F4 side, and then remains constant. However, it is not limited to this, and the dimension of the second direction W of the second-second region 32B may be constant over the entire second-second region 32B, or it may decrease over the entire second-second region 32B as you move from the third surface F3 side towards the fourth surface F4 side.

[0056] The average dimension of the second direction W of the portion of the second-2 region 32B exposed on the fifth surface F5 is shorter than the average dimension of the second direction W of the second-1 region 31B, preferably 50% to 90% of the average dimension of the second direction W of the second-1 region 31B. The average dimension of the second direction W of the portion of the second-1 region 31B exposed on the fourth surface F4 is the average value of the second direction W of the second internal electrode 30B exposed on the same surface, and the average dimension of the second direction W of the second-1 region 31B is the average value of the second direction W of the second internal electrode 30B located on the same plane parallel to the stacking direction T and the second direction W at a position halfway along the first direction L of the laminate 10.

[0057] The configuration of the second internal electrode 30B generally corresponds to, for example, the configuration of the first internal electrode 30A inverted in the first direction L. The configuration of the second-first region 31B generally corresponds to, for example, the configuration of the first-first region 31A inverted in the first direction L, and the configuration of the second-second region 32B generally corresponds to, for example, the configuration of the first-second region 32A inverted in the first direction L. However, the configuration of the second internal electrode 30B does not necessarily have to correspond to the configuration of the first internal electrode 30A inverted in the first direction L.

[0058] It is preferable that the concentration of Sn in the second-second region 32B is higher than the concentration of Sn in the second-first region 31B. It is also preferable that an Sn layer is arranged in the second-second region 32B. The concentration of Sn in the second-second region 32B is the average peak intensity of TEM-EDX at three points in the second-second region 32B on a plane parallel to the stacking direction T and the second direction W at a position halfway along the first direction L of the second-second region 32B, and the concentration of Sn in the second-first region 31B is the average peak intensity of TEM-EDX at three points in the second-first region 32B on a plane parallel to the stacking direction T and the second direction W at a position halfway along the first direction L of the laminate 10.

[0059] When the end of the second direction W of the second-second region 32B and the first internal electrode 30A are perpendicular, it is thought that electric field concentration is likely to occur at the point where the end of the second direction W of the second-second region 32B and the first internal electrode 30A intersect, due to the overlap of internal electrodes 30 with different potentials. However, with this configuration, reliability can be improved at points where electric field concentration is likely to occur.

[0060] Furthermore, the Sn layer may also be placed in the second-first region 31B. In that case, it is preferable that the thickness of the Sn layer placed in the second-second region 32B is greater than the thickness of the Sn layer placed in the second-first region 31B. If a large amount of Sn is included in the internal electrode 30 in order to increase the thickness of the Sn layer placed in the second-first region 31B, the melting point of the internal electrode 30 will decrease, and in the firing process described later, the coverage of the internal electrode 30 will decrease due to oversintering of the internal electrode 30, which may cause the capacitance of the multilayer ceramic capacitor 1 to decrease excessively. By making the thickness of the Sn layer placed in the second-first region 31B thinner than the thickness of the Sn layer placed in the second-second region 32B, the influence of the Sn layer in the second-first region 31B, which is the region that mainly forms capacitance, can be reduced.

[0061] It is preferable that the coverage of region 2-2 32B is lower than the coverage of region 2-1 31B. It is preferable that the coverage of region 2-2 32B is 80% or more. This can suppress delamination. Coverage is calculated, for example, by dividing the area in which the second internal electrode 30B actually exists in the field of view in the SEM image where the entire second internal electrode 30B is visible in a plane parallel to the first direction L and the second direction W by the area enclosed by the contour of the second internal electrode 30B.

[0062] It is preferable that an Mg region is located at the end of the second-second region 32B in the second direction W. Specifically, it is preferable that the Mg region is located so as to extend from the second-second region 32B in the second direction W. The Mg region can be observed using an SEM or the like.

[0063] The thickness (dimension in the stacking direction T) of the Mg region located in the portion of the second-2 region 32B that is closer to the second-1 region 31B at the end in the second direction W is preferably greater than the thickness of the Mg region located in the portion of the second-2 region 32B that is closer to the fourth surface F4 at the end in the second direction W.

[0064] Preferably, the area of ​​the Mg region located in the portion of the second-2 region 32B that is closer to the second-1 region 31B at the end of the second direction W is larger than the area of ​​the Mg region located in the portion of the second-2 region 32B that is closer to the fourth plane F4 at the end of the second direction W. Specifically, when the second-2 region 32B is divided into five equal parts in the first direction L, the Mg regions parallel to each cross-section located in the second internal electrode 30B are measured using an SEM or the like in the cross-section passing through the end of the second direction W of the second-2 region 32B that is located closest to the third plane F3 after the region closest to the fourth plane F4, and their respective average values ​​are taken.

[0065] The thickness of the Mg region located at the end of the second direction W of the second-2 region 32B is preferably greater than the thickness of the Mg region located at the end of the second direction W of the second-1 region 31B.

[0066] It is preferable that the total number of Mg regions located at the end of the second direction W of the second-2 region 32B is greater than the total number of Mg regions located at the end of the second direction W of the second-1 region 31B.

[0067] These measures improve reliability in areas where electric field concentration is likely to occur when the end of the second-2 region 32B in the second direction W and the second internal electrode 30B are perpendicular to each other.

[0068] The thickness of the Mg region located at the end of the second direction W of region 2-2 32B was the average value obtained when each Mg region was observed in an SEM image on a plane parallel to the stacking direction T and the second direction W at a position halfway along the first direction L of region 2-2 32B. Similarly, the thickness of the Mg region located at the end of the second direction W of region 2-1 31B was the average value obtained when each Mg region was observed in an SEM image on a plane parallel to the stacking direction T and the second direction W at a position halfway along the first direction L of the laminate 10.

[0069] More specifically, when the multilayer ceramic capacitor 1 is polished in the first direction L, the end of the second-second region 32B in the second direction W is first exposed on the WT cross-section. At this point in the WT cross-section, the number of Mg regions relative to the number of second internal electrodes 30B, the thickness of each Mg region in the stacking direction T, the thickness of each Mg region in the second direction W, and the area can be observed at the end of the second-second region 32B in the second direction W.

[0070] As polishing progresses further, in the WT cross-section where the 2-1 region 31B is exposed, the number of Mg regions relative to the number of second internal electrodes 30B, the thickness of each Mg region in the stacking direction T, the thickness of each Mg region in the second direction W, and the area can be observed at the end of the 2-1 region 31B in the second direction W.

[0071] Furthermore, the thickness of the Mg regions arranged within a certain range in the stacking direction T is determined by measuring the maximum dimension of the Mg region in the stacking direction T for each Mg region within that range, and using the average of the obtained values. Similarly, the thickness of the Mg regions arranged within a certain range in the second direction W is determined by measuring the maximum dimension of the Mg region in the second direction W for each Mg region within that range, and using the average of the obtained values.

[0072] It is preferable that the total content of Mg and Mn in the region between region 2-2 32B and surface 5 F5 is greater than the total content of Mg and Mn in the region between region 2-1 31B and surface 5 F5.

[0073] In the region between the second-second region 32B and the fifth surface F5, the sintering of the dielectric layer 20 is likely to be insufficient, and the density of the dielectric layer 20 is likely to decrease. However, with this configuration, the sinterability of the dielectric layer 20 can be improved and the density of the dielectric layer 20 can be improved in the region between the second-second region 32B and the fifth surface F5.

[0074] The grain diameter D50 of the dielectric located in the region of the 2-2 region 32B that is within 5 μm of the end in the second direction W is preferably smaller than the grain diameter D50 of the dielectric located in the central region when the 2-1 region 31B is divided into five equal parts in the second direction W. To clarify the boundaries between grains, the grain diameter D50 was determined by heat treatment at 1000°C and observing each region at 20,000x magnification using an SEM. 100 grains were randomly extracted from the obtained SEM images, and the area of ​​the inner portion of the grain boundary of each grain was determined to calculate the equivalent circle diameter, from which the grain diameter D50 was calculated.

[0075] This improves reliability in areas where electric field concentration is likely to occur, when the end of the second direction W of the second-2 region 32B and the first internal electrode 30A are approximately perpendicular to each other.

[0076] For example, in a WT cross-section, when the region sandwiched between the second-second region 32B and the first-first region 31A is divided into three equal parts in the second direction W, it is preferable that the grain diameter D50 of the dielectric grain located in the central region of the three regions is larger than the grain diameter D50 of the dielectric grain located in the region on the fifth surface F5 side of the three regions, or larger than the grain diameter D50 of the dielectric grain located in the region on the sixth surface F6 side of the three regions.

[0077] For example, in the LT cross section, when the region sandwiched between the second-second region 32B and the first-first region 31A is divided into three equal parts in the first direction L, it is preferable that at least one of the following conditions is met: the grain diameter D50 of the dielectric grain located in the central region of the three regions is greater than the grain diameter D50 of the dielectric grain located in the region on the fourth surface F4 side of the three regions, or the grain diameter D50 of the dielectric grain located in the region on the third surface F3 side of the three regions is greater than the grain diameter D50 of the dielectric grain located in the region on the fourth surface F4 side of the three regions.

[0078] This makes it possible to suppress a decrease in capacitance over most of the area forming the capacitance when the end of the second region 32B in the second direction W and the first internal electrode 30A are approximately perpendicular, thereby improving reliability.

[0079] (Inactive portion) The inactive portion 12 is a region where the internal electrode 30 is not located. The inactive portion 12 has an outer layer portion 13 that sandwiches the active portion 11 from the stacking direction T, and a side gap portion 14 that sandwiches the active portion 11 from the second direction W.

[0080] (Outer layer) The outer layer 13 is arranged on the first surface F1 side and the second surface F2 side of the effective part 11, respectively. The material of the outer layer 13 may be the same as or different from the material of the dielectric layer 20 of the effective part 11. The additives added to the outer layer 13 may be different from the additives added to the dielectric layer 20 of the effective part 11.

[0081] (Side gap portion) The side gap portion 14 is located on the fifth surface F5 side and the sixth surface F6 side of the effective portion 11 in the laminate 10, respectively. The material of the side gap portion 14 may be the same as or different from the material of the dielectric layer 20 of the effective portion 11. The additive added to the side gap portion 14 may be different from the additive added to the dielectric layer 20 of the effective portion 11.

[0082] (External Electrodes) The external electrode 40 has a first external electrode 40A and a second external electrode 40B. The first external electrode 40A is positioned on the third surface F3 and extends from the third surface F3 onto the first surface F1, the second surface F2, the fifth surface F5, and the sixth surface F6. The second external electrode 40B is positioned on the fourth surface F4 and extends from the fourth surface F4 onto the first surface F1, the second surface F2, the fifth surface F5, and the sixth surface F6. When it is not necessary to explain the first external electrode 40A and the second external electrode 40B separately, they will be described together as "external electrode 40".

[0083] The external electrode 40 includes, for example, a base electrode 41 placed on the outer surface of the laminate 10 and a plating layer 43 placed on the base electrode 41.

[0084] The base electrode 41 is a fired layer containing, for example, a conductive metal and a glass component. The conductive metal is, for example, Cu.

[0085] The plating layer 43 preferably includes a lower plating layer 44 disposed on the base electrode 41 and an upper plating layer 45 disposed on the lower plating layer 44. In this embodiment, the lower plating layer 44 is a Ni plating layer 44, and the upper plating layer 45 is a Sn plating layer 45.

[0086] The Ni plating layer 44 prevents the base electrode 41 from being corroded by the solder when mounting ceramic electronic components. The Sn plating layer 45 improves the wettability of the solder when mounting the multilayer ceramic capacitor 1, making mounting easier.

[0087] The configuration of the external electrode 40 is not limited to the configuration described above.

[0088] For example, the conductive metal contained in the base electrode 41 is not limited to Cu, but may be Ni, Ag, Pd, Au, Ag-Pd alloy, etc. The base electrode 41 may also contain ceramic powder as a co-material. The external electrode 40 may have a base electrode 41 containing Ni and a co-material, for example. The base electrode 41 containing Ni and a co-material may be provided in place of the base electrode 41 containing Cu and a glass component in an external electrode 40 having a base electrode 41 containing Cu and a glass component, a Ni plating layer 44, and a Sn plating layer 45, or it may be provided in addition to the base electrode 41 containing Cu and a glass component.

[0089] The external electrode 40 may have a resin layer containing conductive particles and a thermosetting resin. The resin layer is formed by applying a conductive paste containing conductive particles and a thermosetting resin to the base electrode 41 or laminate 10 and then heat-treating it.

[0090] The external electrode 40 may include, for example, a base electrode 41 containing Cu and a glass component, a resin layer formed on the base electrode 41, a Ni plating layer 44 formed on the resin layer, and a Sn plating layer 45 formed on the Ni plating layer 44. The resin layer may be formed directly on the laminate 10, or it may be provided in place of the base electrode 41. There may be multiple resin layers.

[0091] The base electrode 41 may be a thin film layer of 1 μm or less in thickness, formed by a thin film formation method such as sputtering or vapor deposition, and in which metal particles are deposited.

[0092] The external electrode 40 may be a plated electrode formed only of a plating layer without providing an underlayer electrode 41. In that case, the plating layer is formed directly on the surface of the laminate 10 and is directly electrically connected to the internal electrode 30. When the external electrode 40 has such a structure, a catalyst may be placed on the surface of the laminate 10 as a pretreatment before the plating layer is formed.

[0093] The plating electrode, which is the plating layer, preferably includes a lower plating layer 44 formed on the surface of the laminate 10 and an upper plating layer 45 formed on the surface of the lower plating layer 44. The lower plating layer 44 is preferably formed using Ni, which has solder barrier properties. However, if the internal electrode 30 is formed using Ni, the lower plating layer 44 is preferably formed using Cu, which has good bonding properties with Ni. The upper plating layer 45 is preferably formed using Sn or Au, which has good solder wettability. The upper plating layer 45 may be formed as needed.

[0094] The configuration of the external electrode 40 is not limited to the configuration described above and can be changed as appropriate. The external electrode 40 may be a combination of two or more of the above-described configurations.

[0095] Here, as shown in Figure 6, the end of the second internal electrode 30B on the third surface F3 side intersects with the end of the first-to-second region 32A in the second direction W when viewed in the stacking direction T. The end of the second internal electrode 30B on the third surface F3 side intersects, for example, with a portion of the first-to-second region 32A where the dimension in the second direction W is approximately constant, in the stacking direction T.

[0096] (Configuration around the first internal electrode) (Configuration in the fifth-face side portion of the WT cross-section) As shown in Figure 7, in a cross-section that passes through the first internal electrode 30A and the second internal electrode 30B and is parallel to the stacking direction T and the second direction W, the end of the second internal electrode 30B on the fifth-face F5 side is located on the fifth-face F5 side of the first internal electrode 30A.

[0097] Furthermore, a cross-section parallel to the stacking direction T and the second direction W, where one end of the first internal electrode 30A in the second direction W is located further to the other side of the second direction W than one end of the second internal electrode 30B in the second direction W, is sometimes called the "intersection WT cross-section." A cross-section parallel to the stacking direction T and the second direction W, where the end of the second internal electrode 30B on the fifth surface F5 side is located further towards the fifth surface 5F than the end of the first internal electrode 30A on the fifth surface F5 side, is sometimes called the "first intersection WT cross-section." Figure 7 shows the first intersection WT cross-section. Figure 7 shows the entire stacking direction T of the multilayer ceramic capacitor 1.

[0098] Furthermore, within the portion of the end of the first-second region 32A in the second direction W that overlaps with the second internal electrode 30B in the stacking direction T, the range in which the cross-section of WT passing through the first-second region 32A is an intersecting cross-section of WT may be a part of the portion of the end of the first-second region 32A in the second direction W that overlaps with the second internal electrode 30B in the stacking direction T. The same applies to the second-second region 32B.

[0099] The dielectric layer 20 contains at least one of the elements Mg and Mn. In the cross-section of the intersection WT, the total content of Mg and Mn in the region within 5 μm of one end of the first internal electrode 30A in the second direction W is greater than the total content of Mg and Mn in the region within 5 μm of the center of the first internal electrode 30A in the second direction W.

[0100] For example, in the cross-section of the first intersection WT, the total content of Mg and Mn in region R15, which is within 5 μm of the end of the first internal electrode 30A on the fifth surface F5 side, is greater than the total content of Mg and Mn in region R1C2, which is within 5 μm of the center of the first internal electrode 30A in the second direction W. The total content of Mg and Mn may be a comparison of the area of ​​Mg and Mn present in each region in the SEM image. Alternatively, it may be a comparison of the intensity of Mg and Mn present in each region in WDX.

[0101] In the cross-section of the first intersection WT, the grain diameter D50 of the dielectric grain in region R15, where the distance from the end of the first internal electrode 30A on the fifth surface F5 side is within 5 μm, may be smaller than the grain diameter D50 of the dielectric grain in region R1C2, where the distance from the center of the first internal electrode 30A in the second direction W is within 5 μm.

[0102] In the cross-section of the first intersection WT, the dimension in the second direction W of the Mg region located at the end of the first internal electrode 30A on the fifth surface F5 side may be larger than the dimension in the second direction W of the Mg region located at the end of the second internal electrode 30B on the fifth surface F5 side.

[0103] In the cross-section of the first intersection WT, the region sandwiched between adjacent second internal electrodes 30B, the region on the fifth surface F5 side of the first internal electrode 30A sandwiched between the adjacent second internal electrodes 30B, is defined as "region A R1A5".

[0104] When region A R1A5 is divided into two equal parts in the second direction W, the grain diameter D50 of the dielectric grain in the inner region R1A5a in the second direction W may be smaller than the grain diameter D50 of the dielectric grain in the outer region R1A5b in the second direction W when region A R1A5 is divided into two equal parts in the second direction W. To clarify the boundaries between grains (grain boundaries), the grain diameter D50 was determined by heat treatment at 1000°C and observation of each region at 20000x magnification using SEM. 100 grains were randomly extracted from the obtained SEM images, and the area of ​​the inner portion of the grain boundary of each grain was determined to calculate the equivalent circle diameter, from which the grain diameter D50 was calculated.

[0105] (Configuration of the portion of the WT cross section on the sixth surface side) In the first intersection WT cross section, the end of the second internal electrode 30B on the sixth surface F6 side may be located on the sixth surface F6 side than the first internal electrode 30A.

[0106] In the cross-section of the first intersection WT, the total content of Mg and Mn in region R16, which is within 5 μm of the end of the first internal electrode 30A on the sixth surface F6 side, is greater than the total content of Mg and Mn in region R1C2, which is within 5 μm of the center of the first internal electrode 30A in the second direction W.

[0107] In the cross-section of the first intersection WT, the grain diameter D50 of the dielectric grain in region R16, where the distance from the end of the first internal electrode 30A on the sixth surface F6 side is within 5 μm, may be smaller than the grain diameter D50 of the dielectric grain in region R1C2, where the distance from the center of the first internal electrode 30A in the second direction W is within 5 μm.

[0108] In the cross-section of the first intersection WT, the dimension in the second direction W of the Mg region located at the end of the first internal electrode 30A on the sixth surface F6 side may be smaller than the dimension in the second direction W of the Mg region located at the end of the second internal electrode 30B on the sixth surface F6 side.

[0109] In the cross-section of the first intersection WT, the region sandwiched between adjacent second internal electrodes 30B, the region on the sixth surface F6 side of the first internal electrode 30A sandwiched between the adjacent second internal electrodes 30B, is defined as "region A R1A6".

[0110] When region A R1A6 is divided into two equal parts in the second direction W, the grain diameter D50 of the dielectric grain in the inner region R1A6a in the second direction W may be smaller than the grain diameter D50 of the dielectric grain in the outer region R1A6b in the second direction W when region A R1A6 is divided into two equal parts in the second direction W.

[0111] (Configuration in LT cross-section) As shown in Figure 8, in a cross-section that passes through the first internal electrode 30A and the second internal electrode 30B and is parallel to the stacking direction T and the first direction L, the end of the second internal electrode 30B on the third surface F3 side is located on the third surface F3 side than the first internal electrode 30A.

[0112] Furthermore, a cross-section parallel to the stacking direction T and the first direction L, where the end of the second internal electrode 30B on the third surface F3 side is located further toward the third surface F3 side than the end of the first internal electrode 30A on the third surface F3 side, is sometimes called the "intersection LT cross-section." Figure 8 shows the intersection LT cross-section. Figure 8 shows the entire stacking direction T of the multilayer ceramic capacitor 1.

[0113] Furthermore, within the portion of the end of the first-second region 32A in the second direction W that overlaps with the second internal electrode 30B in the stacking direction T, the range in which the LT cross-section passing through the first-second region 32A is an intersecting LT cross-section may be a part of the portion of the end of the first-second region 32A in the second direction W that overlaps with the second internal electrode 30B in the stacking direction T. The same applies to the second-second region 32B.

[0114] In the cross-section of the intersection LT, the total content of Mg and Mn in region R13, which is within 5 μm of the end of the first internal electrode 30A on the third surface F3 side, is greater than the total content of Mg and Mn in region R1C1, which is within 5 μm of the center of the first internal electrode 30A in the first direction L.

[0115] In the cross section LT of the intersection, the grain diameter D50 of the dielectric grain in region R13, where the distance from the end of the third surface side of the first internal electrode 30A is within 5 μm, is smaller than the grain diameter D50 of the dielectric grain contained in region R1C1, where the distance from the center of the first direction L of the first internal electrode 30A is within 5 μm.

[0116] In the cross section of the intersection LT, the region sandwiched between adjacent second internal electrodes 30B, the region on the third surface F3 side of the first internal electrode 30A sandwiched between the adjacent second internal electrodes 30B, is defined as "region B R1B".

[0117] The total content of Mg and Mn in region B R1B is greater than the total content of Mg and Mn in region R1C1, which is within 5 μm of the center of the first internal electrode 30A.

[0118] When region B R1B is divided into two equal parts in the first direction L, the total content of Mg and Mn in the region R1Bb outside the first direction L may be greater than the total content of Mg and Mn in the region R1Ba inside the first direction L when region B R1B is divided into two equal parts in the first direction L.

[0119] (Configuration around the second internal electrode) (Configuration in the fifth-face side portion of the WT cross-section) As shown in Figure 9, in a cross-section passing through the first internal electrode 30A and the second internal electrode 30B, and parallel to the stacking direction T and the second direction W, the end of the first internal electrode 30A on the fifth-face F5 side is located on the fifth-face F5 side of the end of the second internal electrode 30B on the fifth-face F5 side.

[0120] Furthermore, a cross-section parallel to the stacking direction T and the second direction W, in which the end of the first internal electrode 30A on the fifth surface F5 side is located closer to the fifth surface F5 than the second internal electrode 30B, is sometimes called the "second intersection WT cross-section." Figure 9 shows the second intersection WT cross-section. Figure 9 shows the entire stacking direction T of the multilayer ceramic capacitor 1.

[0121] In the cross-section of the second intersection WT, the total content of Mg and Mn in region R25, which is within 5 μm of the end of the second internal electrode 30B on the fifth surface F5 side, is greater than the total content of Mg and Mn in region R22C, which is within 5 μm of the center of the second internal electrode 30B in the second direction W.

[0122] The grain diameter D50 of the dielectric grain in region R25, where the distance from the end of the second internal electrode 30B on the fifth surface F5 side is within 5 μm, is smaller than the grain diameter D50 of the dielectric grain in region R22C, where the distance from the center of the second direction W of the second internal electrode 30B is within 5 μm.

[0123] In the cross-section of the second intersection WT, the dimension in the second direction W of the Mg region located at the end of the second internal electrode 30B on the fifth surface F5 side is thicker than the dimension in the second direction W of the Mg region located at the end of the first internal electrode 30A on the fifth surface F5 side.

[0124] In the cross-section of the second intersection WT, the region sandwiched between adjacent first internal electrodes 30A, the region on the fifth surface F5 side of the second internal electrode 30B sandwiched between the adjacent first internal electrodes 30A, is defined as "region A R2A5".

[0125] When region A R2A5 is divided into two equal parts in the second direction W, the grain diameter D50 of the dielectric grain in the inner region R2A5a in the second direction W may be smaller than the grain diameter D50 of the dielectric grain in the outer region R2A5b in the second direction W when region A R2A5 is divided into two equal parts in the second direction W.

[0126] (Configuration of the portion of the WT cross section on the sixth surface side) In the second intersection WT cross section, the end of the first internal electrode 30A on the sixth surface F6 side may be located on the sixth surface F6 side than the end of the second internal electrode 30B on the sixth surface F6 side.

[0127] In the cross-section of the second intersection WT, the total content of Mg and Mn in region R26, which is within 5 μm of the end of the second internal electrode 30B on the sixth surface F6 side, is greater than the total content of Mg and Mn in region R22C, which is within 5 μm of the center of the second internal electrode 30B in the second direction W.

[0128] The grain diameter D50 of the dielectric grain in region R26, where the distance from the end of the second internal electrode 30B on the sixth surface F6 side is within 5 μm, is smaller than the grain diameter D50 of the dielectric grain in region R22C, where the distance from the center of the second direction W of the second internal electrode 30B is within 5 μm.

[0129] In the cross-section of the second intersection WT, the dimension in the second direction W of the Mg region located at the end of the second internal electrode 30B on the sixth surface F6 side is larger than the dimension in the second direction W of the Mg region located at the end of the first internal electrode 30A on the sixth surface F6 side.

[0130] In the cross-section of the second intersection WT, the region sandwiched between adjacent first internal electrodes 30A, the region on the sixth surface F6 side of the second internal electrode 30B sandwiched between the adjacent first internal electrodes 30A, is defined as "region A R2A6".

[0131] When region A R2A6 is divided into two equal parts in the second direction W, the grain diameter D50 of the dielectric grain in the inner region R2A6a in the second direction W may be smaller than the grain diameter D50 of the dielectric grain in the outer region R2A6b in the second direction W when region A R2A6 is divided into two equal parts in the second direction W.

[0132] (Configuration in LT section) As shown in Figure 8, in a cross section (intersecting LT section) that is parallel to the stacking direction T and the first direction L, and in which the end of the second internal electrode 30B on the third surface F3 side is located further toward the third surface F3 side than the end of the first internal electrode 30A on the third surface F3 side, the end of the second internal electrode 30B on the fourth surface F4 side is located further toward the third surface F3 side than the end of the first internal electrode 30A on the fourth surface F4 side.

[0133] In the cross-section of the intersection LT, the total content of Mg and Mn in region R14, which is within 5 μm of the end of the second internal electrode 30B on the fourth surface F4 side, is greater than the total content of Mg and Mn in region R2C1, which is within 5 μm of the center of the second internal electrode 30B in the first direction L.

[0134] The grain diameter D50 of the dielectric grain in region R14, where the distance from the end of the second internal electrode 30B on the fourth surface F4 side is within 5 μm, is smaller than the grain diameter D50 of the dielectric grain contained in region R2C1, where the distance from the center of the second internal electrode 30B in the first direction L is within 5 μm.

[0135] In the cross-section of the intersection LT, the region sandwiched between adjacent first internal electrodes 30A, the region on the fourth surface F4 side of the second internal electrode 30B sandwiched between the adjacent first internal electrodes 30A, is defined as "region B R2B".

[0136] The total content of Mg and Mn in region B R2B is greater than the total content of Mg and Mn in region R2C1, which is within 5 μm of the center of the second internal electrode 30B.

[0137] When region B R2B is divided into two equal parts in the first direction L, the total content of Mg and Mn in the region R2Bb outside the first direction L is greater than the total content of Mg and Mn in the region R2Ba inside the first direction L when region B R2B is divided into two equal parts in the first direction L.

[0138] (Method for manufacturing a multilayer ceramic capacitor) Next, the method for manufacturing the multilayer ceramic capacitor 1 of the embodiment will be described.

[0139] (Dielectric Sheet Preparation Process) A ceramic slurry containing ceramic raw materials including dielectric ceramic material, a binder, a solvent, etc., is prepared. Additives such as rare earth elements and sintering aids are added to the ceramic slurry. Next, the ceramic slurry is formed into a sheet to form a dielectric sheet. Dielectric sheets for the inner layer and dielectric sheets for the outer layer are prepared. The dielectric sheets for the inner layer and the dielectric sheets for the outer layer may contain different components.

[0140] (Internal electrode pattern formation process) A pattern of the internal electrode 30 (sometimes simply called the "internal electrode pattern") is printed on the dielectric sheet using a conductive paste. The internal electrode pattern is printed so that the portion that becomes the 1-1 region 31A and the portion that becomes the 1-2 region 32A are each in the desired shape. The internal electrode pattern is formed by printing, for example, screen printing, gravure printing, or letterpress printing.

[0141] (Step-absorbing paste placement process) Step-absorbing paste is placed on the dielectric sheet. The step-absorbing paste is placed in the first-second region 32A and the region aligned in the first direction L on the dielectric sheet. The step-absorbing paste is also placed in the second-second region 32B and the region aligned in the first direction L on the dielectric sheet in the same manner. The following describes, as an example, the case in which step-absorbing paste is placed around the first internal electrode 30A. In Figure 4, the region aligned in the first-second region 32A and the region aligned in the first direction L on the dielectric sheet is shown as "region R31", and in Figure 5, the region aligned in the second-second region 32B and the region aligned in the first direction L on the dielectric sheet is shown as "region R32".

[0142] By making the concentration of a specific element in the step-absorbing paste higher than the concentration of that element in the dielectric sheet for the inner layer, the concentration of the element can be locally adjusted in the laminate 10. Furthermore, the element in the step-absorbing paste diffuses into the internal electrode pattern and the dielectric sheet. Therefore, the concentration of the element in the part of the internal electrode pattern that is close to the step-absorbing paste can be made higher than the concentration of the element in the part of the internal electrode pattern that is farther away from the step-absorbing paste.

[0143] For example, by making the concentration of Mg in the step-absorbing paste higher than the concentration of Mg in the dielectric sheet for the inner layer, the concentration of Mg in the portion of the internal electrode pattern that is close to the step-absorbing paste (for example, the end of the first internal electrode 30A on the third surface F3 side in the cross-section LT) can be made higher than the concentration of Mg in the portion of the internal electrode pattern that is far from the step-absorbing paste (for example, the central portion of the first internal electrode 30A in the first direction L in the cross-section LT). The same applies to Mn.

[0144] The step-absorbing paste may contain a binder component that easily repels the internal electrode paste. In this case, excessive overlap between the internal electrode paste and the step-absorbing paste can be suppressed. This helps to prevent internal defects from occurring during pressing due to partial increases in the thickness of the laminate.

[0145] After printing the internal electrode paste, a water-repellent film may be formed on the portion of the internal electrode pattern that becomes the first-second region 32A. In this case, when the step-absorbing paste rides up onto the internal electrode pattern, the step-absorbing paste can be made to flow to the outside of the internal electrode pattern. At this time, the first-second region 32A may contain F (fluorine) or Si, and the dielectric layer near the first-second region 32A may contain F.

[0146] The step-absorbing paste contains sintering aids such as Al and V as other additives. It is preferable that the amount of sintering aid in the step-absorbing paste is greater than the amount of sintering aid in the inner dielectric layer paste. In this case, the sinterability near the region where the step-absorbing paste is placed can be improved, thereby improving density and suppressing a decrease in moisture resistance.

[0147] The step-absorbing paste may contain rare earth elements. Examples of rare earth elements include Dy, Tb, Ho, and Gd. If the amount of rare earth elements in the step-absorbing paste is insufficient compared to the amount of rare earth elements in the dielectric layer paste, the rare earth elements in the inner dielectric layer paste may diffuse excessively into the region where the step-absorbing paste is placed, potentially causing abnormal grain growth at the ends of the internal electrodes. In that case, reliability may be reduced. Conversely, if the amount of rare earth elements in the step-absorbing paste is excessive compared to the amount of rare earth elements in the dielectric layer paste, the sinterability near the region where the step-absorbing paste is placed may decrease, potentially reducing density. Therefore, for example, it is preferable that the amount of Dy in the step-absorbing paste be between 110% and 400% of the amount of Dy in the ceramic slurry that forms the dielectric layer.

[0148] Furthermore, it is preferable that the step absorption layer paste contains Si. The amount of Si contained in the step absorption layer paste is preferably adjusted appropriately according to the desired sinterability of the dielectric layer paste and the type and amount of rare earth elements contained in the step absorption layer paste. By increasing the amount of Si contained in the step absorption layer paste, the density near the region where the step absorption layer paste is placed can be improved. It is preferable that the amount of Si contained in the step absorption layer paste be 110% to 200% of the amount of Si contained in the dielectric layer paste. In addition, the step absorption paste may also contain Li and Na. In that case, the amount of Li contained in the step absorption layer paste may be greater than the amount of Li contained in the dielectric layer paste, and the amount of Na contained in the step absorption layer paste may be greater than the amount of Na contained in the dielectric layer paste.

[0149] The amount of Sn contained in the step absorption layer paste is preferably greater than the amount of Sn contained in the dielectric layer paste. The amount of Sn contained in the step absorption layer paste is preferably 0.1 mol% to 3.0 mol% relative to 100 mol of Ti contained in the step absorption paste. This makes it possible to easily form an Sn layer in the first-second region 32A while suppressing a decrease in the melting point of the internal electrodes.

[0150] The dielectric layer paste and the step absorption layer paste may each contain Ca, Sr, and Zr, respectively. For example, if the amount of Ca in the step absorption layer paste is insufficient compared to the amount of Ca in the dielectric layer paste, the Ca in the dielectric layer paste may diffuse excessively into the region where the step absorption layer paste is placed, which may easily lead to a decrease in reliability due to non-uniformity at the edges of the internal electrodes. The same applies to Sr and Zr. Also, Ca may be CaTiO ３ Ya Ba １－Ｘ Ca Ｘ TiO ３ It may be included in the paste for the step absorption layer in this state. However, in order to suppress variations in the particle size of dielectric grains, Ca may be CaCO ３ It is preferable that it be added to the step-absorbing layer paste in this state.

[0151] The order in which the internal electrode pattern formation process and the step-absorbing paste placement process are performed is not particularly limited.

[0152] (Lamination Process) Dielectric sheets for the inner layer are laminated. The dielectric sheets for the inner layer are laminated such that the internal electrode patterns are offset by half a pitch in the first direction L between adjacent sheets. Next, dielectric sheets for the outer layer are laminated on both sides of the laminated dielectric sheets in the lamination direction T. The dielectric sheets for the outer layer are thermocompressed onto the dielectric sheets. This gives rise to the mother block. Each outer layer 13 may be composed of multiple dielectric sheets or of a single dielectric sheet.

[0153] (Pressing process) The mother block is pressed in the stacking direction T by means of hydrostatic pressing or other means.

[0154] In this case, if the internal electrode pattern is a racket-shaped internal electrode pattern, then areas where the internal electrode pattern does not exist tend to form near the region that becomes the first-second region 32A of the internal electrode pattern. When the mother block is pressed, there is a risk that relatively large distortion will occur in the areas where the internal electrode pattern does not exist.

[0155] However, by placing a step-absorbing paste in the area near the first-second region 32A where no internal electrodes exist, the step difference caused by the presence or absence of the first internal electrode 30A is reduced. As a result, the occurrence of localized strain is suppressed in the mother block having a racket-shaped internal electrode pattern.

[0156] Furthermore, the composition of the step-absorbing paste can be adjusted independently of the composition of the dielectric sheet for the inner layer. Therefore, the composition of the dielectric layer 20 located near the first-second region 32A can be made different from the composition of the dielectric layer 20 located at other positions. Moreover, by moving elements in the dielectric layer 20 into the first-second region 32A, the elements contained in the first-second region 32A can be made different from those contained in the first-first region 31A. Additionally, the composition of the dielectric material near the first-second region 32A can be made different.

[0157] (Mother Block Cutting Process) The mother block is divided along cutting lines corresponding to the dimensions of the laminate. The mother block is cut using, for example, a cutting device having a cutting blade. The mother block is cut, for example, along a first direction L in the lamination direction T, and along a second direction W in the lamination direction T. This yields multiple rectangular blocks ("laminated chips"). It is preferable that the corners and edges of the laminated chips be rounded, for example, by barrel polishing.

[0158] (Side gap formation process) A ceramic slurry for the side gap is prepared. The composition of the ceramic slurry for the side gap may be the same as or different from the composition of the ceramic slurry for the inner layer. Different additives may be added to the ceramic slurry for the side gap than those added to the ceramic slurry for the inner layer. For example, the ceramic slurry for the side gap may contain Sn. For example, the ceramic slurry for the side gap may contain Ca.

[0159] The ceramic slurry for the side gap is applied onto a resin film and dried. This creates a dielectric sheet for the side gap. The dielectric sheet for the side gap is attached to the surface where the internal electrodes 30 of the laminated chip are exposed. This forms a layer that will become the side gap 14 on the laminated chip. Each side gap 14 may be composed of multiple dielectric sheets or a single dielectric sheet. The side gap formation step is not necessarily required and may be shortened, for example, if the side gap is formed by arranging the internal electrode pattern with gaps in the second direction W. Even in this case, the paste for the step absorption layer is placed in the area near the first-second region 32A where no internal electrodes exist.

[0160] (Laminate firing process) The laminated chips are heated in a nitrogen atmosphere at a predetermined firing temperature for a predetermined time. This yields the laminate 10.

[0161] (Underlay electrode formation process) Underlay electrodes 31 are formed on the third surface F3 and the fourth surface F4, respectively. A conductive paste containing glass components and metal is prepared as the conductive paste that will become the underlay electrodes 31. The conductive paste that will become the underlay electrodes 31 is applied to the third surface F3 and the fourth surface F4, respectively. The conductive paste applied to the third surface F3 is applied so as to cover the entire third surface F3, a part of the first surface F1, a part of the second surface F2, a part of the fifth surface F5, and a part of the sixth surface F6. The conductive paste applied to the fourth surface F4 is applied so as to cover the entire fourth surface F4, a part of the first surface F1, a part of the second surface F2, a part of the fifth surface F5, and a part of the sixth surface F6.

[0162] (Underlay electrode baking process) The laminate 10 on which the underlay electrode 31 is formed is heated in a nitrogen atmosphere at a predetermined firing temperature for a predetermined time. This causes the underlay electrode 31 to be baked onto the laminate 10. The laminate firing process may be performed simultaneously with the underlay electrode baking process.

[0163] (Plating process) A plating layer 43 is formed on the base electrode 41. A lower plating layer 44 is formed on the base electrode 41. Next, an upper plating layer 45 is formed on the lower plating layer 44. The lower plating layer 44 is formed by, for example, Ni plating. The upper plating layer 45 is formed by, for example, Sn plating. The lower plating layer 44 and the upper plating layer 45 are formed sequentially by, for example, an electroplating method. This forms the external electrode 40.

[0164] As a result of the above steps, the multilayer ceramic capacitor 1 shown in Figure 1 is obtained.

[0165] <Effects according to the embodiment> The multilayer ceramic capacitor 1 of the above embodiment can be obtained as follows.

[0166] According to the above embodiment, the laminate 10 has a first internal electrode 30A with one end exposed on a third surface F3, a second internal electrode 30B with one end exposed on a fourth surface F4, and a dielectric layer 20 containing at least one of the elements Mg and Mn. In a cross-section parallel to the lamination direction T and the second direction W, where the end of the second internal electrode 30B on the fifth surface F5 side is located further toward the fifth surface F5 side than the end of the first internal electrode 30A on the fifth surface F5 side, the total content of Mg and Mn in region R15 within 5 μm of the end of the first internal electrode 30A on the fifth surface F5 side is greater than the total content of Mg and Mn in region R1C2 within 5 μm of the center of the first internal electrode 30A in the second direction W.

[0167] If the shape of the first internal electrode 30A is such that the dimension in the second direction W decreases from the fourth surface F4 to the third surface F3, then there are areas where the first internal electrode 30A does not exist due to the reduced dimension in the second direction W, which can lead to poor sinterability of the dielectric and a decrease in density. However, with this configuration, by making the total content of Mg and Mn in the region R15, which is within 5 μm of the end of the first internal electrode 30A on the fifth surface F5 side, greater than the total content of Mg and Mn in the region R1C2, which is within 5 μm of the center of the first internal electrode 30A in the second direction W, sinterability can be improved and the density of the dielectric can be improved.

[0168] Furthermore, by forming the first internal electrode 30A in a racket shape, the path for moisture from outside the laminate 10 to reach the first internal electrode 30A can be lengthened. This improves the moisture resistance reliability of the multilayer ceramic capacitor 1.

[0169] If certain elements (e.g., Mg, Mn, etc.) are present in excess, the reaction between these elements and the internal electrodes 30 may locally reduce the thickness of the dielectric layer 20 located between the internal electrodes 30, potentially leading to a decrease in reliability. Furthermore, in the region near the center of the second direction W of the first internal electrode 30A, which is the effective region of the capacitor, excessive amounts of Mg and Mn can suppress the grain growth of excess dielectric grains.

[0170] According to the above embodiment, in the cross section of the intersection WT, the grain diameter D50 of the dielectric grain in region R15, where the distance from the end of the first internal electrode 30A on the fifth surface F5 side is within 5 μm, is smaller than the grain diameter D50 of the dielectric grain in region R1C2, where the distance from the center of the first internal electrode 30A in the second direction W is within 5 μm. The grain diameter D50 of the dielectric grain is preferably made smaller, for example, by making the dielectric grain in the step-absorbing paste smaller than the dielectric grain in the dielectric paste for the inner layer, and then arranging it near the internal electrode pattern. In this case, the step-absorbing paste is preferably arranged so that it is between -30 μm and 100 μm from the edge of the internal electrode pattern, depending on the width of the second direction W of the internal electrode. "-" indicates that it is spaced away from the internal electrode, and "+" indicates that it overlaps with the internal electrode. In this case, for example, if the shape of the internal electrode pattern is racket-shaped, a step-absorbing paste is partially placed on the slanted area, and then an additional rectangular printing mask or printing plate is used to overlap the partially placed step-absorbing paste.

[0171] In the cross-section of the first intersection WT, the grain diameter D50 of the dielectric grain near region R15, which is within 5 μm of the end of the first internal electrode 30A on the fifth surface F5 side, can be made smaller than the grain diameter D50 of the dielectric grain near region R1C2, which is within 5 μm of the center of the first internal electrode 30A in the second direction. As a result, capacitance reduction can be suppressed in most of the area that forms the capacitance, and reliability can be improved in areas where electric field concentration is likely to occur.

[0172] With this configuration, the dielectric grains contained in the dielectric layer 20 can be reduced around the electric field concentration points, thereby increasing the electrical resistance.

[0173] According to the above embodiment, in the cross-section of the first intersection WT, the dimension in the second direction W of the Mg region located at the end of the first internal electrode 30A on the fifth surface F5 side may be larger than the dimension in the second direction W of the Mg region located at the end of the second internal electrode 30B on the fifth surface F5 side.

[0174] According to the above embodiment, in the cross section of the first intersection WT, when the region sandwiched between adjacent second internal electrodes 30B, the region on one side of the second direction W (for example, the fifth surface F5 side) of the first internal electrode 30A sandwiched between the adjacent second internal electrodes 30B is defined as region A (for example, region A R1A5), the grain diameter D50 of the dielectric grain in the region on the other side of the second direction W (for example, the sixth surface F6 side) when region A R1A5 is divided in two equal parts in the second direction W, may be smaller than the grain diameter D50 of the dielectric grain in the region on one side of the second direction W (for example, the fifth surface F5 side) when region A R1A5 is divided in two equal parts in the second direction W.

[0175] With this configuration, the dielectric grains contained in the dielectric layer 20 surrounding the electric field concentration point can be reduced, thereby increasing the electrical resistance.

[0176] According to the above embodiment, in a cross-section parallel to the stacking direction T and the first direction L, and where the end of the second internal electrode 30B on the third surface F3 side is located further toward the third surface F3 side than the end of the first internal electrode 30A on the third surface F3 side, the total content of Mg and Mn in region R13, which is within 5 μm of the end of the first internal electrode 30A on the third surface F3 side, is greater than the total content of Mg and Mn in region R1C1, which is within 5 μm of the center of the first internal electrode 30A.

[0177] If the shape of the first internal electrode 30A is such that the dimension in the second direction W decreases from the fourth surface F4 to the third surface F3, then there are areas where the first internal electrode 30A does not exist due to the reduced dimension in the second direction W, which can lead to poor sinterability of the dielectric and a decrease in density. However, with this configuration, by making the total content of Mg and Mn in the region R15, which is within 5 μm of the end of the first internal electrode 30A on the fifth surface F5 side, greater than the total content of Mg and Mn in the region R1C2, which is within 5 μm of the center of the first internal electrode 30A in the second direction W, sinterability can be improved and the density of the dielectric can be improved.

[0178] If certain elements (e.g., Mg, Mn, etc.) are present in excess, the reaction between these elements and the internal electrodes 30 may locally reduce the thickness of the dielectric layer 20 located between the internal electrodes 30, potentially leading to a decrease in reliability. Furthermore, in the region near the center of the first direction L of the first internal electrode 30A, which is the effective region of the capacitor, excessive amounts of Mg and Mn can suppress the grain growth of excess dielectric grains.

[0179] According to the above embodiment, in the cross section of the intersection LT, the grain diameter D50 of the dielectric grain in region R13, where the distance from the end of the first internal electrode 30A on the third surface F3 side is within 5 μm, is smaller than the grain diameter D50 of the dielectric grain in region R1C1, where the distance from the center of the first internal electrode 30A in the first direction L is within 5 μm.

[0180] In the cross-section of the intersection LT, the grain diameter D50 of the dielectric grain near region R13, which is within 5 μm of the end of the first internal electrode 30A on the third surface F3 side, can be made smaller than the grain diameter D50 of the dielectric grain near region R1C1, which is within 5 μm of the center of the first internal electrode 30A in the second direction. As a result, capacitance reduction can be suppressed in most of the area that forms the capacitance, and reliability can be improved in areas where electric field concentration is likely to occur.

[0181] With this configuration, the dielectric grains contained in the dielectric layer 20 can be reduced around the electric field concentration points, thereby increasing the electrical resistance.

[0182] According to the above embodiment, in the cross section of the intersection LT, when the region sandwiched between adjacent second internal electrodes 30B, and the region on the third surface F3 side of the first internal electrode 30A sandwiched between the adjacent second internal electrodes 30B, is defined as region B R1B, the total content of Mg and Mn in region B R1B may be greater than the total content of Mg and Mn in region R1C1, which is within 5 μm of the center of the first internal electrode 30A.

[0183] With this configuration, the dielectric layer 20 surrounding the electric field concentration point can be densified, thereby improving reliability at the electric field concentration point.

[0184] According to the above embodiment, in the cross section of the intersection LT, the total content of Mg and Mn in the region R1Bb outside the first direction L when region R1B is divided into two equal parts in the first direction L may be greater than the total content of Mg and Mn in the region R1Ba inside the first direction L when region R1B is divided into two equal parts in the first direction L.

[0185] With this configuration, by increasing the total content of Mg and Mn in the region far from the internal electrode 30, the sinterability in the region with poorer sinterability can be improved, resulting in better density.

[0186] (Modified form) For example, in the cross section of the first intersection WT, when region A R1A5 is divided into two equal parts in the second direction W, the Mn content in the region R1A5b on the outside of the second direction W may be greater than the Mn content in the region R1A5a on the inside of the second direction W when region A R1A5 is divided into two equal parts in the second direction W.

[0187] The Mn content in the outer region R1A6b when region A R1A6 is divided into two equal parts in the second direction W may be greater than the Mn content in the inner region R1A5a in the second direction W when region A R1A6 is divided into two equal parts in the second direction W.

[0188] In the cross-section of the second intersection WT, the Mn content in the region R2A5b outside the second direction W when region A R2A5 is divided into two equal parts in the second direction W may be greater than the Mn content in the region R2A5a inside the second direction W when region A R2A5 is divided into two equal parts in the second direction W.

[0189] When region A R2A6 is divided into two equal parts in the second direction W, the Mn content in the region R2A6b outside the second direction W may be greater than the Mn content in the region R2A5a inside the second direction W when region A R2A6 is divided into two equal parts in the second direction W.

[0190] According to at least one of these configurations, in the dielectric layer 20, the density of a region close to the surface of the laminate 10 can be improved by increasing the Mn content in that region. Furthermore, since the excessive grain growth suppression effect caused by Mn not diffusing too much in the second direction W can be reduced, an excessive decrease in capacitance can be suppressed.

[0191] The present invention is not limited to the configuration of the above embodiments, and can be modified and applied as appropriate without altering the essence of the invention. Furthermore, a combination of two or more of the individual desirable configurations described in the above embodiments also constitutes the present invention.

[0192] For example, in the above embodiment, in view in the stacking direction T, the end of the first internal electrode 30A on the fourth surface F4 side intersects with a portion of the 2-2 region 32B where the dimension in the second direction W is constant, and the end of the second internal electrode 30B on the third surface F3 side intersects with a portion of the 1-2 region 32A where the dimension in the second direction W is constant, but the embodiment is not limited to these. As shown in Figure 10, in view in the stacking direction T, the end of the first internal electrode 30A on the fourth surface F4 side may intersect with a portion of the 2-2 region 32B where the dimension in the second direction W decreases as it moves from the third surface F3 side to the fourth surface F4 side, and the end of the second internal electrode 30B on the third surface F3 side may intersect with a portion of the 1-2 region 32A where the dimension in the second direction W decreases as it moves from the fourth surface F4 side to the third surface F3 side.

[0193] 1 Multilayer ceramic capacitor 10 Laminate 20 Dielectric layer 30A First internal electrode 30B Second internal electrode 40A First external electrode 40B Second external electrode F1 First surface F2 Second surface F3 Third surface F4 Fourth surface F5 Fifth surface F6 Sixth surface R15 Region within 5 μm of the end of the first internal electrode on the fifth surface side R1C2 Region within 5 μm of the center of the first internal electrode in the second direction R1A5 Region A R1A5a Inner region in the second direction when Region A is divided into two equal parts in the second direction R1A5b Inner region in the second direction when Region A is divided into two equal parts in the second direction R13 Region within 5 μm of the end of the first internal electrode on the third surface side R1C1 Region within 5 μm of the center of the first internal electrode R1B Region B R1Ba The inner region in the first direction when region B is divided into two equal parts in the first direction: R1Bb The outer region in the first direction when region B is divided into two equal parts in the first direction:

Claims

1. A laminate having first and second surfaces facing each other in the stacking direction, third and fourth surfaces facing each other in a first direction perpendicular to the stacking direction, and fifth and sixth surfaces facing each other in a second direction perpendicular to the stacking direction and the first direction; a first external electrode disposed on the third surface; and a second external electrode disposed on the fourth surface, wherein the laminate has a first internal electrode with one end exposed on the third surface, a second internal electrode with one end exposed on the fourth surface, and a dielectric layer containing at least one element of Mg and Mn, and in a cross-section parallel to the stacking direction and the second direction, and where the end of the second internal electrode in the second direction is located closer to the fifth surface than the first internal electrode, A multilayer ceramic capacitor in which the total content of Mg and Mn in a region of the first internal electrode within 5 μm of the end on the fifth surface is greater than the total content of Mg and Mn in a region of the first internal electrode within 5 μm of the center in the second direction.

2. The multilayer ceramic capacitor according to claim 1, wherein the grain diameter D50 of the dielectric grain in the region where the distance from the end of the first internal electrode on the fifth surface side is within 5 μm is smaller than the grain diameter D50 of the dielectric grain in the region where the distance from the center of the first internal electrode in the second direction is within 5 μm.

3. The multilayer ceramic capacitor according to claim 1 or 2, wherein the dimension in the second direction of the Mg layer disposed at the end of the first internal electrode in the second direction is thicker than the dimension in the second direction of the Mg layer disposed at the end of the second internal electrode in the second direction.

4. When the region sandwiched between adjacent second internal electrodes, the region on the fifth surface side of the first internal electrode sandwiched between the adjacent second internal electrodes is defined as region A, the grain diameter D50 of the dielectric grain in the inner region in the second direction when region A is divided into two equal parts in the second direction is smaller than the grain diameter D50 in the outer region in the second direction when region A is divided into two equal parts in the second direction, according to any one of claims 1 to 3.

5. The multilayer ceramic capacitor according to claim 1 or 2, wherein, among the regions sandwiched between adjacent second internal electrodes, the region on the fifth surface side of the first internal electrode sandwiched between the adjacent second internal electrodes is defined as region A, and when region A is divided into two equal parts in the second direction, the Mn content in the outer region in the second direction is greater than the Mn content in the inner region in the second direction when region A is divided into two equal parts in the second direction.

6. A laminate having first and second surfaces facing each other in the stacking direction, third and fourth surfaces facing each other in a first direction perpendicular to the stacking direction, and fifth and sixth surfaces facing each other in a second direction perpendicular to the stacking direction and the first direction; a first external electrode disposed on the third surface; and a second external electrode disposed on the fourth surface, wherein the laminate has a first internal electrode with one end exposed on the third surface, a second internal electrode with one end exposed on the fourth surface, and a dielectric layer containing at least one element of Mg and Mn, and in a cross-section parallel to the stacking direction and the first direction, where the end of the second internal electrode on the third surface side is located further towards the third surface than the end of the first internal electrode on the third surface side, A multilayer ceramic capacitor in which the total content of Mg and Mn in a region of the first internal electrode that is within 5 μm of the end on the third surface is greater than the total content of Mg and Mn in a region of the first internal electrode that is within 5 μm of the center in the first direction.

7. The multilayer ceramic capacitor according to claim 6, wherein the grain diameter D50 of the dielectric grain in a region within 5 μm of the end of the first internal electrode on the third surface is smaller than the grain diameter D50 of the dielectric grain included in a region within 5 μm of the center of the first internal electrode in the first direction.

8. The multilayer ceramic capacitor according to claim 6 or 7, wherein, among the regions sandwiched between adjacent second internal electrodes, the region on the third surface side of the first internal electrode sandwiched between the adjacent second internal electrodes is defined as region B, and the total content of Mg and Mn in region B is greater than the total content of Mg and Mn in the region within 5 μm of the center of the first internal electrode.

9. The multilayer ceramic capacitor according to claim 8, wherein the total content of Mg and Mn in the inner region in the first direction when the B region is divided into two equal parts in the first direction is greater than the total content of Mg and Mn in the outer region in the first direction when the B region is divided into two equal parts in the first direction.

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