Sensor substrate and detection device

Abstract

Provided are a sensor substrate and a detection device capable of achieving higher sensitivity than a conventional multi-supported-beam structure. A sensor substrate 10a is provided with a plurality of cut portions 31a as a deflection-forming part for promoting deflection of a pressure-receiving part 17a due to a differential pressure between the front and rear surfaces, the plurality of cut portions 31a penetrating the thickness of the pressure-receiving part 17a. Since the physical strength of the sensor substrate 10a decreases by the provision of the plurality of cut portions 31a in the pressure-receiving part 17a, deflection of the pressure-receiving part 17a due to the differential pressure between the front and rear surfaces is promoted more than by conventional structures, and a corresponding increase in sensitivity can be achieved over that of a conventional multi-supported-beam structure.

Description

Sensor board and detection device

[0001] This invention relates to a sensor substrate and a detection device using the same.

[0002] Conventionally, a sensor for measuring pressure fluctuations is known in which a pressure-receiving part, which is a cantilevered beam structure, is installed in an opening of an air chamber formed inside a box-shaped housing so as to close the opening, and the pressure fluctuation is detected from the tilt state of the pressure-receiving part (see, for example, Patent Document 1).

[0003] Patent No. 5674167

[0004] However, if the thickness of the cantilevered pressure-receiving section is less than a few hundred nanometers, the warping due to residual stress during the fabrication of the pressure-receiving section becomes significant, potentially making it impossible to obtain the practically necessary yield. While a configuration with a multi-supported pressure-receiving section can significantly suppress the warping of the pressure-receiving section during fabrication, on the other hand, the sensitivity may be significantly reduced because the pressure-receiving section is supported in a multi-supported structure.

[0005] This invention has been made in consideration of the above points, and aims to provide a sensor substrate and detection device that can achieve higher sensitivity than conventional multi-beam structures.

[0006] The sensor substrate according to the present invention comprises a frame, a pressure-receiving portion provided in the frame in the shape of a double-supported beam, and a deflection-forming portion that promotes deflection caused by the differential pressure between the front and back surfaces of the pressure-receiving portion, wherein the electrical resistance changes in accordance with the change in the pressure-receiving portion.

[0007] The detection device according to the present invention is a detection device for detecting differential pressure, comprising a sensor substrate and a circuit unit that obtains a predetermined measurement result based on the electrical resistance generated on the sensor substrate, wherein the sensor substrate comprises a frame, a pressure-receiving part supported by the frame in a cantilevered beam-like manner, and a deflection-forming part that promotes deflection caused by the differential pressure on the front and back surfaces of the pressure-receiving part, and the electrical resistance changes in accordance with the change in the pressure-receiving part.

[0008] According to the present invention, the deflection caused by the differential pressure between the front and back surfaces of the pressure-receiving part is promoted more than in conventional designs, thereby achieving a higher sensitivity than conventional multi-beam structures.

[0009] This is a schematic diagram showing the configuration of the detection device according to the present invention. This is a schematic diagram showing the configuration of the sensor unit according to the first embodiment. This is an exploded perspective view showing the configuration of the sensor unit according to the first embodiment. This is a cross-sectional view showing the cross-sectional configuration of the sensor substrate in portion A-A' in Figure 3. This is a schematic diagram showing the configuration of the sensor unit according to the second embodiment. This is a schematic diagram showing the configuration of the sensor unit according to the third embodiment. This is a schematic diagram showing the configuration of the sensor unit according to the fourth embodiment. This is a schematic diagram showing the configuration of the sensor unit according to the fifth embodiment. This is a schematic diagram showing the configuration of the sensor unit according to the sixth embodiment. This is a schematic diagram showing the configuration of the sensor unit according to the seventh embodiment. This is a schematic diagram showing the configuration of the sensor unit according to the eighth embodiment. This is a schematic diagram showing the configuration of the sensor unit according to another embodiment of the eighth embodiment. This is a schematic diagram showing the configuration of the sensor unit according to the ninth embodiment. This is a schematic diagram showing the configuration of the sensor unit according to the tenth embodiment. This is a schematic diagram showing the configuration of the sensor unit according to the eleventh embodiment. This is a schematic diagram showing the configuration of the sensor unit according to the twelfth embodiment.

[0010] An embodiment of the present invention will be described in detail below with reference to the drawings. In the following description, the same reference numerals are used for identical components, and redundant descriptions are omitted.

[0011] 1. First Embodiment (1-1) Overall Configuration Diagram 1 of the detection device is a schematic diagram showing the configuration of the detection device 1a according to the first embodiment. The detection device 1a detects, for example, sound waves or vibration waves emitted from inside the object to be detected 100 as the target wave W, and presents the obtained detection result as predetermined data such as a waveform.

[0012] The detection target 100 is not particularly limited as long as it emits sound waves or vibration waves that propagate through space. For example, it may include living organisms such as people, animals other than humans, and plants, as well as structures such as building columns, interior and exterior walls of buildings, roads, bridges, dams, embankments, and tunnels.

[0013] When the object to be detected 100 is a living organism, the detection device 1a can detect various sound waves and vibration waves generated within the body, such as blood flow in blood vessels and the heart, and airflow in the trachea and lungs, as the target wave W. In addition, it can detect photoacoustic waves (elastic waves) emitted from within the living organism when infrared or far-infrared rays are irradiated onto the living organism from a wave source (not shown), as the target wave W.

[0014] Furthermore, when the object to be detected 100 is a structure, the detection device 1a can detect various sound waves and vibration waves generated within the structure, such as fracture sounds, vibrations, and operating sounds, as the target wave W.

[0015] The detection device 1a includes a sensor unit 2a that detects a target wave W emitted by the object to be detected 100, and a circuit unit 3 that performs signal processing and calculation processing on the target wave W obtained from the sensor unit 2a. The sensor unit 2a is displaced by the pressure difference generated when it receives the target wave W on the sensor substrate 10a, which will be described later, and its electrical resistance changes according to this displacement.

[0016] Furthermore, the sensor unit 2a does not have a sealed space between the sensor substrate 10a and the object to be detected 100, and an open space ER1 that is in communication with the external environment is provided. In addition, the sensor unit 2a also has an open space ER2 that is in communication with the external environment on the back side of the sensor substrate 10a, which is located on the side opposite to the object to be detected 100, and no sealed space is provided there.

[0017] The sensor unit 2a receives the target wave W generated from the object to be detected 100 via the open space ER1, and outputs the change in electrical resistance on the sensor substrate 10a resulting from the change in differential pressure on the front and back surfaces of the sensor substrate 10a to the circuit unit 3. The circuit unit 3 generates data showing a predetermined measurement result (change in the intensity of the target wave W) based on the change in electrical resistance generated by the sensor substrate 10a.

[0018] In the first embodiment, the method of positioning the sensor unit 2a on the detection target 100 is not particularly limited, and an open space ER1 communicating with the external environment is provided between the sensor substrate 10a and the detection target 100 without providing a sealed space. For example, the sensor unit 2a may be provided on a support part (not shown), and the sensor unit 2a may be positioned by the support part, which provides an open space ER1 between it and the detection target 100. Alternatively, the user may hold the sensor unit 2a and position it by providing an open space ER1 between it and the detection target 100.

[0019] The circuit unit 3 comprises a control unit 4, a detection circuit 5, and a calculation unit 6, with the control unit 4 providing overall control of the circuit unit 3. The detection circuit 5 measures the change in electrical resistance obtained from the sensor substrate 10a and outputs the obtained measurement result as the detection result from the sensor unit 2a to the calculation unit 6. The calculation unit 6 uses the measurement result obtained from the detection circuit 5 to calculate data indicating the intensity change of the detection target wave W, and data indicating the state of the detection target 100 by converting the intensity change of the detection target wave W into other indicators.

[0020] For example, the calculation unit 6 can convert the intensity change of the detected wave W detected by the sensor unit 2a into other indicators using a data table that pre-associates the relationship between the intensity change of the detected wave W and a predetermined indicator, or a learning model that has learned the relationship between the intensity change of the detected wave W and a predetermined indicator.

[0021] (1-2) Sensor Unit Configuration Next, the configuration of the sensor unit 2a will be described. Figure 2 is a schematic diagram showing the configuration of the sensor unit 2a according to the first embodiment, and Figure 3 is an exploded perspective view showing the configuration of the sensor unit 2a according to the first embodiment. In Figures 2 and 3, the z-axis direction indicates the thickness direction of the sensor unit 2a, the x-axis direction perpendicular to the z-axis direction indicates the length direction of the sensor unit 2a, and the y-axis direction perpendicular to the x-axis direction and the z-axis direction indicates the width direction of the sensor unit 2a.

[0022] As shown in Figures 2 and 3, the sensor unit 2a consists of a sensor substrate 10a and a fixing member 11 on which the sensor substrate 10a is mounted. The fixing member 11 is made of silicon or the like and has an opening 11a that penetrates through its thickness. In this embodiment, the fixing member 11 has a frame portion 11b formed in an annular shape, and the opening 11a surrounded by the frame portion 11b is formed in a quadrilateral shape.

[0023] The sensor substrate 10a has a frame 15 and a pressure-receiving portion forming portion 16. The sensor substrate 10a has a frame 15 formed so as to surround the quadrilateral pressure-receiving portion forming portion 16. The sensor substrate 10a is positioned on the fixing member 11 such that the annular frame 15 is fixed to the frame portion 11b of the fixing member 11 and the pressure-receiving portion forming portion 16 is located in the opening 11a of the fixing member 11.

[0024] The pressure receiving section forming section 16 includes a ladder-shaped pressure receiving section 17a and a pressure receiving side section 18a １ , 18a ２ It has a pressure-receiving beam section 20a and a pressure-receiving side section 18a. １ , 18a ２ These are arranged in series on the side (width direction side (y-axis direction side)) of the pressure receiving section 17a. Pressure receiving side section 18a according to this embodiment １ , 18a ２ Each of these is formed in a quadrilateral shape, with two perpendicularly adjacent sides integrally formed with the frame 15, and the remaining side separated from the pressure receiving portion 17a by a notch 49 that penetrates the thickness.

[0025] The notch 49 is formed in a straight line, and its longitudinal direction extends in the x-axis direction along the longitudinal direction of the pressure receiving portion 17a. The gap dimension in the width direction (y-axis direction) perpendicular to the longitudinal direction of the notch 49 is preferably 0.02 [μm] to 10 [μm], and more preferably 1 [μm] or less. By narrowing the gap dimension of the notch 49, it is possible to easily generate a differential pressure on the front and back surfaces of the pressure receiving portion 17a when it receives the wave W to be detected.

[0026] The pressure-receiving sides 18a facing each other １ , 18a ２ Between them, a notch 47 is formed that penetrates the thickness. Adjacent pressure-receiving side portion 18a１ , 18a ２ , one side opposite to each other is separated and insulated by the notch 47. It should be noted that the gap dimension of the notch 47 in the x-axis direction is preferably 0.02 [μm] to 10 [μm], and more preferably 1 [μm] or less. By reducing the gap dimension of the notch 47, it is easy to generate a differential pressure on the front and back surfaces of the pressure receiving portion 17a when receiving the detection target wave W.

[0027] For the pressure receiving portion 17a, one side and the opposite other side are each integrally formed with the frame 15 to serve as fixed ends. Accordingly, the pressure receiving portion 17a has a multi-supported beam structure provided on the frame 15 in a doubly supported beam shape. The pressure receiving portion 17a includes a pressure receiving plate portion 19a and a plurality of beam portions 23a connecting the pressure receiving plate portion 19a and the frame 15 １ , 23a ２ . When there is no need to distinguish each of the beam portions 23a １ , 23a ２ , they are simply referred to as the beam portion 23a.

[0028] In the pressure receiving portion 17a, one side of the pressure receiving plate portion 19a is fixed to the frame 15 by one pair of beam portions 23a １ . In addition, in the pressure receiving portion 17a, the other side opposite to the one side of the pressure receiving plate portion 19a is fixed to the frame 15 by the other pair of beam portions 23a ２ . The plurality of beam portions 23a serving as fixed ends of the pressure receiving portion 17a are each strip-shaped, one end is integrally formed with the pressure receiving plate portion 19a, and the other end is integrally formed with the frame 15.

[0029] The length dimension of the beam portion 23a in the longitudinal direction is preferably 5 [μm] to 100 [μm], and more preferably 10 [μm] or more. The width dimension of the beam portion 23a is preferably 1 [μm] to 50 [μm], and more preferably 10 [μm] or less. By making the beam portion 23a long and thin, the beam portion 23a can be easily deformed by the differential pressure generated between the front and back surfaces of the pressure receiving portion 17a.

[0030] Between the pair of beam portions 23a located on one side of the pressure receiving portion 17a １ and the pair of beam portions 23a located on the other side of the pressure receiving portion 17a２ A pressure-receiving beam section 20a is provided in each of the spaces between them. In this embodiment, the pressure-receiving beam section 20a is formed in a quadrilateral shape, with one side integrally formed with the frame 15, and the remaining three sides separated from the pressure-receiving plate section 19a and beam section 23a by a U-shaped cutout 48.

[0031] The gap dimensions of the notches 48 between the pressure-receiving beam section 20a and the beam section 23a, and between the pressure-receiving beam section 20a and the pressure-receiving plate section 19a, are preferably 0.02 [μm] to 10 [μm], and more preferably 1 [μm] or less. By narrowing the gap dimensions of the notches 48, it is possible to easily generate a differential pressure on the front and back surfaces of the pressure-receiving section 17a when it receives the wave W to be detected.

[0032] The pressure-receiving plate portion 19a is provided with pressure-receiving frame portions 29a and 29b arranged in a rectangular ring shape, and a plurality of long plate portions 30 extending in the width direction (y-axis direction) within the pressure-receiving frame portions 29a and 29b. The pressure-receiving frame portion 29a is one of the beam portions 23a １ From the end of the other beam portion 23a on the opposite side ２ They are arranged to connect in a straight line to the ends. The pressure receiving frame portion 29a has a strip-shaped metal layer 54a on its surface. The pressure receiving frame portion 29b is integrally formed with the ends of the pair of parallel pressure receiving frame portions 29a and extends in the width direction of the pressure receiving frame portion 29a to connect the ends of the pressure receiving frame portions 29a.

[0033] The long plate portion 30 is formed in a strip shape and is arranged at predetermined intervals within the pressure receiving frame portions 29a and 29b. The long plate portion 30 is arranged parallel to the pressure receiving frame portion 29b in its longitudinal direction, and its end is integrally formed with the pressure receiving frame portion 29a. The width dimension of the long plate portion 30 (dimension in the x-axis direction, which is the shorter direction) is preferably 0.02 [μm] to 10 [μm], and more preferably 1 [μm] or less. By narrowing the width dimension of the long plate portion 30, it is possible to easily deform the long plate portion 30 due to the differential pressure generated on the front and back surfaces of the pressure receiving portion 17a.

[0034] A notched portion 31 is provided between adjacent long plate portions 30. In the notched portion 31, a strip-shaped notch 31a is formed throughout the entire area of ​​the notched portion 31, penetrating the thickness. The gap dimension (dimension in the x-axis direction) between the notches 31a between adjacent long plate portions 30 is preferably 0.02 [μm] to 10 [μm], and more preferably 1 [μm] or less. By narrowing the gap dimension of the notches 31a, it is possible to easily generate a differential pressure on the front and back surfaces of the pressure receiving portion 17a when it receives the wave W to be detected.

[0035] Figure 4 is a cross-sectional view showing the cross-sectional configuration of the sensor substrate 10a in the A-A' section of Figure 3. The frame 15 consists of a silicon substrate 50, an insulating layer 51, a silicon layer 52, a piezoresistive layer 53, and a metal layer 54, all of which are laminated together. The silicon layer 52 and the piezoresistive layer 53 of the frame 15 are fixed in place by being sandwiched between the insulating layer 51 and the metal layer 54.

[0036] The silicon layer 52 may be doped with impurities to be conductive or non-conductive. In this embodiment, even if the silicon layer 52 is conductive, metal layers 54 and 54a are provided in the region where current is to be passed. Therefore, when current is passed, current does not easily flow through the silicon layer 52, and current flows through the metal layers 54 and 54a.

[0037] As shown in Figure 3, an insulating groove 9 is provided in the frame 15. The insulating groove 9 is formed continuously with the cut portion 47. The insulating groove 9 has a structure in which the metal layer 54 and the piezoresistive layer 53 have been removed, and the silicon layer 52, insulating layer 51 and silicon substrate 50 are laminated. The insulating groove 9 electrically insulates the metal layer 54 and the piezoresistive layer 53, and one of the beam portions 23a １ The electrode 15a connected to the other beam portion 23a ２ An electrode 15b connected to the frame 15 is formed on the frame 15 (Figure 3). In this embodiment, one electrode 15a is connected to one beam portion 23a １ The two are electrically connected, and the other electrode 15b is connected to the other beam portion 23a ２These are electrically connected. Electrodes 15a and 15b are each formed in a "U" shape, and their opposing tip edges are separated by an insulating groove 9.

[0038] Pressure receiving portion 17a and pressure receiving side portion 18a of pressure receiving portion forming portion 16 １ , 18a ２ The pressure-receiving beam section 20a each has a structure in which a piezoresistive layer 53 is laminated on a silicon layer 52. Pressure-receiving section 17a, pressure-receiving side section 18a １ , 18a ２ The silicon layer 52 and the piezoresistive layer 53, respectively, located in the pressure-receiving beam section 20a, are integrally formed with the silicon layer 52 and the piezoresistive layer 53 of the frame 15. The silicon layer 52 and the piezoresistive layer 53 extend from one electrode 15a to one beam section 23a １ , pressure plate portion 19a and the other beam portion 23a ２ The other electrode 15b is integrally formed through this process.

[0039] Here, the pressure receiving section 17a is the beam section 23a １ ,23a ２ With the fixed end as the base point, beam portion 23a １ ,23a ２ The pressure-receiving plate portion 19a is elastically curved and deformable in the direction normal to the surface (up and down direction in Figure 4). The pressure-receiving portion 17a is the beam portion 23a １ ,23a ２ By deforming with respect to the fixed end, the electrical resistance of the piezoresistive layer 53 increases or decreases. The pressure receiving section 17a receives the differential pressure between its front and back surfaces from the detection target wave W from the detection target 100, and deforms according to the strength of the differential pressure caused by the detection target wave W.

[0040] In this embodiment, the pressure receiving portion 17a has a double-supported beam-like structure, so the beam portion 23a １ ,23a ２ The expansion and contraction that occur in the pressure receiving frame 29a, which connects these in a straight line, may cancel each other out. For this reason, it is preferable to provide a metal layer 54a in the pressure receiving frame 29a of the pressure receiving section 17a, and to allow current to flow actively through the metal layer 54a in the pressure receiving frame 29a. As a result, the pressure receiving section 17a is connected to the beam section 23a １ ,23a ２Based on the increase or decrease in the electrical resistance of the piezoresistive layer 53 due to deformation, changes in the differential pressure between the front and back surfaces can be accurately detected.

[0041] Although the pressure-receiving portion 17a has multiple notches 31a formed in the pressure-receiving plate portion 19a, the gap size between these notches 31a is selected to be narrow. As a result, when the detection target wave W is received, a differential pressure is easily generated on the front and back surfaces of the pressure-receiving portion 17a, and the electrical resistance of the piezoresistive layer 53 can be increased or decreased in accordance with the strength of the detection target wave W. The sensor substrate 10a can detect the strength of the detection target wave W by measuring the resistance between electrodes 15a and 15b, as the resistance changes based on the change in the pressure-receiving portion 17a caused by the strength of the detection target wave W.

[0042] In this embodiment, the sensor substrate 10a is positioned so that its side faces the object to be detected 100. However, the sensor substrate 10a may also be positioned so that the fixing member 11 located on the back surface of the sensor substrate 10a faces the object to be detected 100. In this case as well, the object to be detected wave W can be detected by the pressure receiving unit 17a.

[0043] (1-3) Method for Manufacturing the Sensor The method for manufacturing the sensor substrate 10a is as follows. First, an SOI (Silicon On Insulator) substrate is prepared in which a silicon substrate 50, an insulating layer 51, and a silicon layer 52 are laminated. The thicknesses of the silicon substrate 50, insulating layer 51, and silicon layer 52 are, for example, 300 [μm], 0.4 [μm], and 0.08 [μm] in that order. The silicon layer 52 of this SOI substrate is doped to form a piezoresistive layer 53 on the surface of the silicon layer 52. On the piezoresistive layer 53, the metal layer 54 of the frame 15 and the metal layer 54a of the pressure receiving part 17a are formed. After that, the piezoresistive layer 53 and the silicon layer 52 in the pressure receiving part forming part 16 are sequentially etched to form notches 31a, 47, 48, and 49.

[0044] Furthermore, electrodes 15a and 15b are formed on the frame 15 by etching the metal layer 54 and the piezoresistive layer 53 of the frame 15 to form insulating grooves 9 on the frame 15. Finally, the silicon substrate 50 and the insulating layer 51 are etched from the opposite side to form a pressure receiving portion 17a and a pressure receiving side portion 18a within the pressure receiving portion forming portion 16. １ , 18a ２ This forms a pressure-receiving beam section 20a. In this way, a sensor substrate 10a having a double-supported beam-shaped pressure-receiving section 17a is formed.

[0045] (1-4) Function and Effects As described above, the sensor substrate 10a according to the first embodiment comprises a frame 15 and a pressure-receiving portion 17a having a piezoresistive layer 53, which is provided in a cantilevered beam shape within the frame 15. Furthermore, the sensor substrate 10a is provided with a plurality of notches 31a that penetrate the thickness of the pressure-receiving portion 17a as a deflection-forming portion that promotes deflection caused by the differential pressure between the front and back surfaces of the pressure-receiving portion 17a. The plurality of notches 31a according to this embodiment each extend in the width direction (y-axis direction) perpendicular to the longitudinal direction of the pressure-receiving portion 17a.

[0046] Because the pressure-receiving section 17a of the sensor substrate 10a has a multi-supported beam structure, warping that occurs during manufacturing in a cantilevered beam structure of the pressure-receiving section can be significantly suppressed, and the yield required for practical use can be obtained. In addition, because the physical strength of the sensor substrate 10a is reduced by the amount of multiple notches 31a provided in the pressure-receiving section 17a, the deflection of the pressure-receiving section 17a is promoted more than in conventional designs due to the differential pressure between the front and back surfaces, and as a result, a higher sensitivity can be achieved than in conventional multi-supported beam structures.

[0047] Furthermore, the sensor substrate 10a has a notched portion 31a formed in a notched portion 31a and a long plate portion 30 without a notched portion 31a, which are alternately arranged on the pressure receiving plate portion 19a along the longitudinal direction of the pressure receiving portion 17a. As a result, the sensor substrate 10a can have multiple notches 31a regularly formed on the pressure receiving plate portion 19a, thereby improving the aesthetic appearance while reducing physical strength and achieving high sensitivity.

[0048] In the sensor unit 2a, in order to prevent a pressure difference from occurring between the front and back surfaces of the pressure-receiving section 17a and the external environment, both the front and back surfaces of the pressure-receiving section 17a are exposed (open) to the external environment (visible from the outside). Because the sensor unit 2a does not have a sealed space, it can be made into a simpler structure.

[0049] 2. Second Embodiment In the first embodiment described above, a configuration in which a notch 31a is formed over the entire area of ​​the notch forming portion 31 was described. However, the present invention is not limited to this, and as shown in Figure 5, a configuration in which a notch 31b is formed only over a part of the area of ​​the notch forming portion 31 is also possible.

[0050] The sensor unit 2b according to the second embodiment shown in Figure 5 differs from the sensor unit 2a described above in the shape of the notch 31b of the pressure-receiving plate portion 19b on the sensor substrate 10b, but otherwise has the same configuration as the first embodiment. Other configurations, such as the configuration including the piezoresistive layer 53, are the same as those of the first embodiment described above, so their explanation will be omitted here, and the following explanation will mainly focus on the configuration of the pressure-receiving plate portion 19b, which is the main difference from the first embodiment.

[0051] In the second embodiment as well, the pressure receiving plate portion 19b is provided with pressure receiving frame portions 29a and 29b arranged in a rectangular ring shape, and a plurality of long plate portions 30 extending in the width direction (y-axis direction) within the pressure receiving frame portions 29a and 29b. A notch forming portion 31 is provided between adjacent long plate portions 30. One or more elliptical notches 31b are formed in each notch forming portion 31.

[0052] In this embodiment, the multiple notch-forming sections 31 include a notch-forming section 31 in which multiple notches 31b of different longitudinal lengths are arranged spaced apart, and a notch-forming section 31 in which only one notch 31b is formed.

[0053] The gap dimension (dimension in the x-axis direction) of the notched portion 31b is preferably 0.02 [μm] to 10 [μm], and more preferably 1 [μm] or less. By narrowing the gap dimension of the notched portion 31b, it is possible to easily generate a differential pressure on the front and back surfaces of the pressure receiving portion 17b when the detection target wave W is received.

[0054] As described above, the sensor substrate 10b according to the second embodiment can achieve the same effects as the first embodiment, and the notch 31b promotes the deflection of the pressure receiving portion 17b due to the differential pressure between the front and back surfaces more than in the conventional design, thereby enabling a higher sensitivity than the conventional multi-beam structure.

[0055] In the second embodiment described above, the case in which an elliptical notch 31b is provided was described, but the present invention is not limited to this, and may also include a bell-shaped notch in which the end of the notch is cut out to the outer side and communicates with the outside.

[0056] 3. Third Embodiment In the first embodiment described above, the case in which a pressure receiving plate portion 19a provided with pressure receiving frame portions 29a and 29b arranged in a rectangular ring shape was applied was described, but the present invention is not limited to this, and as shown in Figure 6, a pressure receiving plate portion 19c without a pressure receiving frame portion may also be applied.

[0057] The sensor unit 2c according to the third embodiment shown in Figure 6 differs from the sensor unit 2a described above in the configuration of the pressure-receiving plate portion 19c on the sensor substrate 10c, but otherwise has the same configuration as the first embodiment. Other configurations, such as the inclusion of the piezoresistive layer 53, are the same as those of the first embodiment described above, so their explanation will be omitted here. The following explanation will focus mainly on the configuration of the pressure-receiving plate portion 19c, which is the main difference from the first embodiment.

[0058] The pressure-receiving plate portion 19c according to the third embodiment is provided with a short plate portion 29c, a long plate portion 32c, a long plate portion 33c, and a pressure-receiving surface portion 34c. The short plate portion 29c is formed in the shape of a strip or the like, and has a pair of beam portions 23a １ (Pair of beam sections 23a ２ It is provided to connect the ends of the ). The longitudinal plate portion 32c is formed in a strip shape and extends from each of the short plate portions 29c toward the pressure receiving surface portion 34c, connecting the short plate portions 29c and the pressure receiving surface portion 34c. In this embodiment, the longitudinal plate portion 32c is provided along the center line of the pressure receiving portion 17c.

[0059] The long plate portions 33c extend from both sides of the long plate portion 32c toward the width direction of the pressure receiving portion 17c. A notch forming portion 31 is provided between adjacent long plate portions 33c. Each notch forming portion 31 has a notched notch portion 31c formed therein, with its end cut out to the outer side and communicating with the outside.

[0060] In this embodiment, the formation position of the long plate portion 33c extending from one side of the long plate portion 32c is offset from the formation position of the long plate portion 33c extending from the other side of the long plate portion 32c. Therefore, at the position where the long plate portion 33c is formed on one side of the long plate portion 32c, a notch portion 31c is formed on the other side of the long plate portion 32c.

[0061] The gap dimension (dimension in the x-axis direction) of the notched portion 31c is preferably 0.02 [μm] to 10 [μm], and more preferably 1 [μm] or less. By narrowing the gap dimension of the notched portion 31c, it is possible to easily generate a differential pressure on the front and back surfaces of the pressure receiving portion 17c when the detection target wave W is received.

[0062] The pressure-receiving surface portion 34c is formed in a quadrilateral shape and is located in the central region of the pressure-receiving plate portion 19c. The pressure-receiving surface portion 34c has longitudinal plate portions 32c extending from the center toward the transverse plate portions 29c. The pressure-receiving plate portion 19c is selected so that the area in which the pressure-receiving surface portion 34c is formed is smaller than the area in which the longitudinal plate portions 33c and the notched portions 31c are arranged alternately. In this embodiment, 1 / 3 of the area of ​​the pressure-receiving plate portion 19c is the pressure-receiving surface portion 34c, and the remaining 2 / 3 of the area of ​​the pressure-receiving plate portion 19c is the area in which the longitudinal plate portions 33c and the notched portions 31c are arranged alternately.

[0063] As described above, the sensor substrate 10c according to the third embodiment can achieve the same effects as the first embodiment, and the notch 31c promotes the deflection of the pressure-receiving portion 17c due to the differential pressure between the front and back surfaces more than in the conventional design, thereby enabling a higher sensitivity than the conventional multi-beam structure.

[0064] 4. Fourth Embodiment In the first embodiment described above, a sensor substrate 10a was described in which identically shaped notches 31a were provided within the pressure receiving frame portions 29a and 29b arranged in a rectangular ring shape. However, the present invention is not limited to this, and as shown in Figure 7, a plurality of notches 31d with different shapes are provided within the pressure receiving frame portions 29a and 29b. １ The end of the cut-out portion 31d is cut out to the outer side, allowing it to communicate with the outside. ２ A sensor substrate 10d may be provided with a mixture of these materials.

[0065] The sensor unit 2d according to the fourth embodiment shown in Figure 7 differs from the sensor unit 2a described above in the configuration of the pressure-receiving plate portion 19d on the sensor substrate 10d, but has the same configuration as the first embodiment in other respects. Furthermore, the configuration including the piezoresistive layer 53 is the same as that of the first embodiment described above, so its explanation will be omitted here. The following explanation will focus mainly on the configuration of the pressure-receiving plate portion 19d, which is the main difference from the first embodiment.

[0066] The pressure-receiving plate portion 19d is provided with notches 31 between adjacent long plate portions 30. The notches 31 consist of (i) multiple notches 31d with different lengths in the longitudinal direction. １ (ii) a cut-forming portion 31 which is spaced apart from (ii) one cut-forming portion 31d １ (iii) A notched portion 31 formed only by (iii) a notched portion 31d whose end is cut out to the outer side and communicates with the outside. ２ A notched portion 31 is formed, and (iv) the end of the notched portion 31d is cut out to the outer side and communicates with the outside. ２ and cut portion 31d １ A notch forming section 31 of two types is provided, and either of the following is provided.

[0067] Cut portion 31d １ ,31d ２ The gap dimension (dimension in the x-axis direction) is preferably 0.02 [μm] to 10 [μm], and more preferably 1 [μm] or less. Cut portion 31d １ ,31d ２By narrowing the gap dimension, it becomes easier to generate a differential pressure on the front and back surfaces of the pressure receiving section 17d when it receives the target wave W.

[0068] As described above, the sensor substrate 10d according to the fourth embodiment can achieve the same effects as the first embodiment, and the notched portion 31d １ ,31d ２ This promotes greater deflection of the pressure-receiving section 17d due to the differential pressure between the front and back surfaces compared to conventional designs, thereby achieving higher sensitivity than conventional multi-beam structures.

[0069] 5. Fifth Embodiment In the first embodiment described above, a case was described in which a notch 31a was provided as a deflection-forming portion that promotes deflection caused by the differential pressure between the front and back surfaces of the pressure-receiving portion 17a. However, the present invention is not limited to this, and the shape of the beam portion may be made to promote deflection of the pressure-receiving portion, and the beam portion may be used as a deflection-forming portion. In the fifth embodiment, a configuration in which the beam portion is provided as a deflection-forming portion will be described.

[0070] The sensor unit 2e according to the fifth embodiment shown in Figure 8 differs from the sensor unit 2a described above in the configuration of the pressure-receiving portion forming section 16e on the sensor substrate 10e, but otherwise has the same configuration as the first embodiment. Other configurations, such as the configuration including the piezoresistive layer 53, are the same as those of the first embodiment described above, so their explanation will be omitted here, and the following explanation will mainly focus on the configuration of the pressure-receiving portion forming section 16e, which is the main difference from the first embodiment.

[0071] The pressure-receiving portion forming portion 16e consists of a pressure-receiving portion 17e and a pressure-receiving side portion 18e １ , 18e ２ It has a pressure-receiving beam section 20e. The pressure-receiving section 17e has one side and the other side of the opposite side that are integrally formed with the frame 15 and are fixed ends. As a result, the pressure-receiving section 17e has a multi-supported beam structure that is provided on the frame 15 in a double-supported beam shape. The pressure-receiving section 17e has a quadrilateral pressure-receiving plate section 19e and a plurality of beam sections 23e that connect the pressure-receiving plate section 19e and the frame 15. １ ,23e ２ It is equipped with the beam section 23e １ ,23e ２When there is no need to distinguish between them, they are simply referred to as beam section 23e.

[0072] In the fifth embodiment, the beam portion 23e is formed to be long and slender. The length of the beam portion 23e is formed to be longer than the length of the four sides (longitudinal direction) of the pressure receiving plate portion 19e. The beam portion 23e extends linearly from the corners of the four-sided pressure receiving plate portion 19e toward the corners of the frame 15, and the formation position is selected so that the length of the beam portion 23e is maximized within the limited frame 15. By making the beam portion 23e long and slender, it is possible to easily deform the beam portion 23e due to the differential pressure generated on the front and back surfaces of the pressure receiving portion 17e.

[0073] The longitudinal length of the beam portion 23e is preferably 1 μm to 100 μm, and more preferably 10 μm or more. The width of the beam portion 23e is preferably 1 μm to 50 μm, and more preferably 20 μm or less. By making the beam portion 23e long and slender, it is possible to easily deform the beam portion 23e due to the differential pressure generated on the front and back surfaces of the pressure receiving portion 17e.

[0074] Pressure-receiving side portion 18e １ , 18e ２ This is the pressure-receiving side portion 18a of the first embodiment described above. １ , 18a ２ The only difference is the shape, and each is formed in a trapezoidal shape. Pressure-receiving side portion 18e １ , 18e ２ One side is integrally formed with the frame 15, and one side has a notch 49e that penetrates the thickness, forming the beam portion 23e １ ,23e ２ It is spaced apart, and one side is spaced apart from the pressure receiving plate portion 19e by the cut portion 49e. The cut portion 49e is on one of the beam portions 23e １ From there, via the pressure receiving plate portion 19e to the other beam portion 23e ２ It is formed along each side up to that point.

[0075] Mutually opposing pressure-receiving sides 18e １ , 18e ２The two sides are insulated from each other by a notch 47 that penetrates the thickness, separating one side from the other. The pressure-receiving beam section 20e is formed in a trapezoidal shape, with one side integrally formed with the frame 15, and the remaining three sides separated from the pressure-receiving plate section 19e and beam section 23e by a notch 48e that penetrates the thickness.

[0076] The gap dimensions between the notches 47, 48e, and 49e are preferably 0.02 [μm] to 10 [μm], and more preferably 1 [μm] or less. By narrowing the gap dimensions between the notches 47, 48e, and 49e, it is possible to easily generate a differential pressure on the front and back surfaces of the pressure receiving section 17e when it receives the wave W to be detected.

[0077] In the sensor substrate 10e according to the fifth embodiment, a plurality of beam portions 23e extend radially from the pressure receiving plate portion 19e to promote the deflection caused by the differential pressure between the front and back surfaces of the pressure receiving portion 17e. １ ,23e ２ The sensor substrate 10e can achieve the same effects as the first embodiment described above, and has a linearly slender and long beam portion 23e. １ ,23e ２ This promotes greater deflection of the pressure-receiving section 17e due to the differential pressure between the front and back surfaces compared to conventional designs, thereby achieving higher sensitivity than conventional multi-beam structures.

[0078] 6. Sixth Embodiment In the fifth embodiment described above, a configuration was used in which a plurality of linearly slender and elongated beam portions 23e were provided as a deflection-forming portion that promotes deflection caused by the differential pressure between the front and back surfaces of the pressure-receiving portion 17e. However, the present invention is not limited to this, and for example, as shown in Figure 9, a plurality of spirally curved beam portions (hereinafter simply referred to as spiral beam portions) 23f １ ,23f ２ ,23f ３ ,23f ４ The spiral beam portion 23f may be provided as a bending-forming portion. １ ,23f ２ ,23f ３ ,23f ４ When there is no need to distinguish between them, they are simply referred to as the spiral beam section 23f.

[0079] A sensor unit 2f according to the sixth embodiment shown in Fig. 9 differs from the sensor unit 2e according to the fifth embodiment described above in the configuration of the pressure receiving portion forming portion 16f on the sensor substrate 10f. Other configurations, such as the configuration including the piezoresistive layer 53, are the same as those of the first embodiment described above, so description thereof is omitted here, and the following description will mainly focus on the configuration of the pressure receiving portion forming portion 16f, which is the difference from the fifth embodiment.

[0080] The pressure receiving portion forming portion 16f includes a pressure receiving portion 17f and a plurality of pressure receiving side portions 18f. The pressure receiving portion 17f is formed in a circular shape, and there are four fixed ends arranged at equal intervals on the outer circumference of the pressure receiving portion 17f, each of which is integrally formed with the frame 15. The pressure receiving portion 17f is provided on the frame 15 in the form of a doubly supported beam in the x-axis direction and the y-axis direction respectively, and has a multi-supported beam structure. The pressure receiving portion 17f includes a circular pressure receiving plate portion 19f, and a plurality of spiral beam portions 23f connecting the pressure receiving plate portion 19f and the frame 15 １ , 23f ２ , 23f ３ , 23f ４ .

[0081] The spiral beam portion 23f according to the sixth embodiment is formed so as to spiral from the frame 15 toward the pressure receiving plate portion 19f at the center portion, approaching while gradually decreasing in diameter. By being wound in a spiral shape, the spiral beam portion 23f can be easily deformed toward the front and back surface sides by the differential pressure generated between the front and back surfaces of the pressure receiving portion 17f.

[0082] The spiral length dimension of the spiral beam portion 23f is preferably 50 [μm] to 5000 [μm], and more preferably 200 [μm] or more. The width dimension of the spiral beam portion 23f is preferably 1 [μm] to 50 [μm], and more preferably 20 [μm] or less. By making the spiral beam portion 23f longer to allow more spirals and making it thinner, the spiral beam portion 23f can be easily deformed by the differential pressure generated between the front and back surfaces of the pressure receiving portion 17f.

[0083] Spiral beam portions 23f adjacent in the radial direction １ , 23f ２ , 23f ３ , 23f４ notches 31f penetrating through the thickness are provided between each of the. According to the present embodiment, the plurality of notches 31f are respectively provided on the spiral beam portions 23f １ , 23f ２ , 23f ３ , 23f ４ are formed in a spiral shape along and space adjacent spiral beam portions 23f １ , 23f ２ , 23f ３ , 23f ４ apart from each other.

[0084] The gap dimension (dimension in the x-axis direction) of the notches 31f is preferably 0.02 [μm] to 10 [μm], and more preferably 1 [μm] or less. By narrowing the gap dimension of the notches 31f, it is possible to easily generate a differential pressure between the front and back surfaces of the pressure receiving portion 17f when receiving the detection target wave W.

[0085] The pressure receiving side portion 18f is different only in shape from the pressure receiving side portion 18a of the first embodiment described above １ , 18a ２ , and each is formed in a substantially triangular shape. In the pressure receiving side portion 18f, two sides arranged at right angles are integrally formed with the frame 15, and the remaining one side is spaced apart from the spiral beam portion 23f by a notch 49f penetrating through the thickness. The side of the pressure receiving side portion 18f facing the spiral beam portion 23f is respectively curved along the curved spiral beam portion 23f.

[0086] The gap dimension (dimension in the x-axis direction) of the notches 31f and 49f is preferably 0.02 [μm] to 10 [μm], and more preferably 1 [μm] or less. By narrowing the gap dimension of the notches 31f, it is possible to easily generate a differential pressure between the front and back surfaces of the pressure receiving portion 17f when receiving the detection target wave W.

[0087] In the present embodiment, one spiral beam portion 23f is provided on one electrode 15a １ , 23f ４ is connected, and the other spiral beam portion 23f is connected to the other electrode 15b ２ , 23f ３ is connected. The pressure receiving portion 17f extends from one electrode 15a to the one spiral beam portion 23f１ ,23f ４ , pressure receiving plate portion 19f and the other spiral beam portion 23f ２ ,23f ３ Current flows through to the other electrode 15b. The pressure-receiving section 17f is elastically deformable in the direction normal to the surface (up and down in Figure 9), with the fixed end of the spiral beam section 23f as the starting point, and the spiral beam section 23f and the pressure-receiving plate section 19f. By deforming the pressure-receiving section 17f with the fixed end of the beam section 23f as the starting point, the electrical resistance of the piezoresistive layer 53 increases or decreases.

[0088] In the sensor substrate 10f according to the sixth embodiment, a plurality of spiral-shaped beam portions 23f are provided, which are formed in a spiral shape and gradually approach the pressure-receiving plate portion 19f along the outer circumference of the frame 15. As a result, the sensor substrate 10f can achieve the same effects as the first embodiment described above, and the deflection of the pressure-receiving portion 17f due to the differential pressure between the front and back surfaces is promoted more than in the conventional design by the spiral-shaped beam portions 23f, thereby achieving a higher sensitivity than the conventional multi-beam structure.

[0089] In the sixth embodiment, four spiral beam sections 23f are located along the outer circumference of the pressure-receiving plate section 19f. １ ,23f ２ ,23f ３ ,23f ４ Although a configuration with the above has been described, the present invention is not limited to this, and for example, a configuration in which three or more spiral beam sections are provided along the outer circumference of the pressure receiving plate section 19f may also be used. For example, in a configuration with three spiral beam sections, two spiral beam sections may be connected to one electrode 15a, and the remaining spiral beam section may be connected to the other electrode 15b. Furthermore, regarding the shape of the spiral, it is sufficient to increase the length of the beam section, so it goes without saying that various spiral shapes are acceptable, such as a square spiral shape, not just a circular spiral shape like the spiral beam section 23f.

[0090] 7. Seventh Embodiment Next, a sensor unit according to the seventh embodiment will be described. Figure 10 is a schematic diagram showing the configuration of the sensor unit 2g according to the seventh embodiment. The sensor unit 2g of the seventh embodiment is characterized by the provision of a serpentine beam portion (hereinafter also simply referred to as a serpentine beam portion) 23g that promotes deflection caused by the differential pressure between the front and back surfaces of the pressure-receiving portion 17g. Other configurations, such as the provision of a piezoresistive layer 53, are the same as those of the first embodiment described above, so their explanation will be omitted here, and the following description will mainly focus on the differences from the first embodiment.

[0091] Within the frame 15 of the sensor unit 2g, the pressure receiving portion forming portion 16g has a pair of beam portions 23a on one side. １ An asymmetrical shape is created by providing one side and a meandering beam section 23g on the other side. These beam sections 23a are provided in the pressure receiving section forming section 16g. １ Furthermore, a pressure-receiving section 17g is provided on the frame 15 by the meandering beam section 23g, which supports the pressure-receiving plate section 19g in a cantilevered beam-like manner.

[0092] The pressure receiving section 17g has one side of the pressure receiving plate section 19g that is one of a pair of beam sections 23a １ The pressure plate portion 19g is fixed to the frame 15 by a pair of beam portions 23a. １ This configuration is the same as that of the first embodiment described above, so its explanation will be omitted here. The meandering beam portion 23g has one end integrally formed with the pressure receiving plate portion 19g and the other end integrally formed with the frame 15. In this embodiment, one end of the meandering beam portion 23g is integrally formed with the center of the other side of the pressure receiving plate portion 19g, and the other side of the pressure receiving plate portion 19g is supported by the frame 15 with one meandering beam portion 23g.

[0093] The pressure-receiving portion forming portion 16g has pressure-receiving side portions 18a on the side (width direction side (y-axis direction side)) of the pressure-receiving portion 17g. １ , 18g is provided. Pressure receiving side portion 18a １ Two adjacent sides formed perpendicular to the frame 15 are integrally formed with the frame 15, while the remaining side is separated from the pressure-receiving portion 17g by a notch 49 that penetrates the thickness.

[0094] The pressure-receiving side portion 18g has two adjacent sides formed perpendicular to the frame 15 and integrally formed with the frame 15. The remaining side of the pressure-receiving side portion 18g is separated from the pressure-receiving portion 17g by the notch 49 and separated from the meandering beam portion 23g by the notch 49g which penetrates the thickness. The notch 49g is formed in a roughly quadrilateral shape, and the meandering beam portion 23g is formed in the opening region which penetrates the thickness.

[0095] The pressure-receiving sides 18a facing each other １ Between the 18g, a notch 47 is formed that penetrates the thickness. Adjacent pressure-receiving side portion 18a １ , 18g are insulated from each other by a notch 47 on one side opposite each other. The pressure receiving beam section 20a is formed in a quadrilateral shape, with one side integrally formed with the frame 15, and the remaining three sides are separated by a U-shaped notch 48 into the pressure receiving plate section 19g and the beam section 23a １ They are drifting apart.

[0096] The pressure-receiving section 17g extends from one electrode 15a to one beam section 23a １ The current flows through the pressure-receiving plate portion 19g and the other meandering beam portion 23g to the other electrode 15b. Because the meandering beam portion 23g is meandering and its length is increased, the physical strength of the meandering beam portion 23g can be reduced, and as a result the pressure-receiving portion 17g can be more elastically deformable in the direction normal to the surface (up and down direction in Figure 9). The pressure-receiving portion 17g is connected to the beam portion 23a １ Furthermore, by deforming the serpentine beam section 23g with respect to its fixed end, the electrical resistance of the piezoresistive layer 53 increases or decreases.

[0097] In the sensor substrate 10g according to the seventh embodiment, the pressure receiving plate portion 19g is supported by the frame 15 by the meandering beam portion 23g. As a result, the sensor substrate 10g can achieve the same effects as the first embodiment described above, and the meandering beam portion 23g promotes the deflection of the pressure receiving portion 17g due to the differential pressure between the front and back surfaces more than in the conventional design, thereby enabling a higher sensitivity than the conventional multi-beam structure.

[0098] 8. Eighth Embodiment In the seventh embodiment described above, a configuration was described in which the pressure receiving plate portion 19g is supported on the frame 15 by a single meandering beam portion 23g. However, the present invention is not limited to this, and as shown in Figure 11A, a configuration in which the pressure receiving plate portion 19h is supported on the frame 15 by a plurality of meandering beam portions 23h may also be used.

[0099] The sensor unit 2h according to the eighth embodiment shown in Figure 11A differs from the sensor unit 2g of the seventh embodiment described above in the configuration of the pressure-receiving portion forming portion 16h on the sensor substrate 10h, and is characterized by the provision of multiple serpentine beam portions 23h. Other configurations, such as the provision of the piezoresistive layer 53, are the same as those of the first embodiment described above, so their explanation will be omitted here, and the following description will mainly focus on the differences from the seventh embodiment.

[0100] In this embodiment, one end of one meandering beam portion 23h is integrally formed with one corner of the other side of the pressure-receiving plate portion 19h, and the other end of the meandering beam portion 23h is integrally formed with the frame 15. Furthermore, one end of the other meandering beam portion 23h is integrally formed with the other corner of the other side of the pressure-receiving plate portion 19h, and the other end of the meandering beam portion 23h is integrally formed with the frame 15. In this way, the other side of the pressure-receiving plate portion 19h is supported by the frame 15 by the two meandering beam portions 23h.

[0101] A pressure-receiving beam section 20h is provided between adjacent pairs of meandering beam sections 23h. One side of the pressure-receiving beam section 20h is integrally formed with the frame 15, and the remaining side is separated from the pressure-receiving plate section 19h and the meandering beam section 23h by a notch 48h.

[0102] The pressure-receiving portion forming portion 16h has pressure-receiving side portions 18a on the sides (width direction side (y-axis direction side)) of the pressure-receiving portion 17h. １ A pressure-receiving side portion 18h is provided. Two adjacent sides of the pressure-receiving side portion 18h, which are formed perpendicular to the frame 15, are integrally formed with the frame 15. The remaining side of the pressure-receiving side portion 18h is separated from the pressure-receiving plate portion 19h by the cut portion 49, and separated from the meandering beam portion 23h by the cut portion 49 that penetrates the thickness.

[0103] As described above, in the sensor substrate 10h according to the eighth embodiment, the pressure receiving plate portion 19h is supported by the frame 15 with a plurality of meandering beam portions 23h. As a result, the sensor substrate 10h can achieve the same effects as the first embodiment described above, and the deflection of the pressure receiving portion 17h due to the differential pressure between the front and back surfaces is promoted more than in the conventional design by the plurality of meandering beam portions 23h, thereby achieving a higher sensitivity than the conventional multi-beam structure.

[0104] In the eighth embodiment described above, a configuration was described in which multiple meandering beam sections 23h are arranged at predetermined intervals in the y-axis direction, but the present invention is not limited to this. For example, as shown in Figure 11B, one of the meandering beam sections 23h ３ Within the curved portion, the other meandering beam portion 23h ４ The curved section is positioned, and one of the meandering beam sections 23h ３ The curved section and the other meandering beam section 23h ４ A configuration in which curved sections are arranged alternately is also possible. In this case, multiple meandering beam sections 23h ３ , 23h ４ The number of meandering beam sections 23h is determined by the amount by which they are alternately arranged along the x-axis. ３ , 23h ４ Even with this feature, the size in the y-axis direction can be reduced, allowing for miniaturization.

[0105] 9. Ninth Embodiment In the sensor substrate 10e according to the fifth embodiment described above, a plurality of beam portions 23e extend radially from one side of the pressure receiving plate portion 19e to promote the deflection of the pressure receiving portion 17e caused by the differential pressure between the front and back surfaces. １ In addition, multiple beam sections 23e are provided, extending radially from the other side of the pressure-receiving plate section 19e. ２ Although the present invention has described the case in which such a feature is provided, it is not limited to this, and for example, as shown in Figure 12, a beam portion 23i extending radially from the pressure-receiving plate portion 19i may be provided on only one of the sides of the pressure-receiving plate portion 19i.

[0106] Figure 12 is a schematic diagram showing the configuration of the sensor unit 2i according to the ninth embodiment. The sensor unit 2i of the ninth embodiment has a plurality of beam portions 23i extending radially from the pressure receiving plate portion 19i in order to promote the deflection of the pressure receiving portion 17i caused by the differential pressure between the front and back surfaces. １A distinctive feature is that it is provided only on the other side of the pressure-receiving plate portion 19i.

[0107] In this case, one side of the pressure-receiving plate portion 19i has a pair of beam portions 23a, similar to the first embodiment. １ A beam section 23a is provided. １ The configuration is the same as in the first embodiment, so its explanation will be omitted here. In the ninth embodiment, as in the fifth embodiment, the beam portion 23i is made thin and its length is made longer than the length of the four sides (longitudinal direction) of the pressure receiving plate portion 19i. The beam portion 23i extends linearly from the corners of the quadrilateral pressure receiving plate portion 19i toward the corners of the frame 15, and the formation position is selected so that the length of the beam portion 23i is maximized within the limited frame 15. By making the beam portion 23i thin and long, it is possible to easily deform the beam portion 23i due to the differential pressure generated on the front and back surfaces.

[0108] As described above, in the sensor substrate 10i according to the ninth embodiment, a plurality of beam portions 23i are provided that extend radially from the pressure receiving plate portion 19i to promote the deflection of the pressure receiving portion 17i caused by the differential pressure between the front and back surfaces. The sensor substrate 10i can achieve the same effects as the first embodiment described above, and the linearly slender and long beam portions 23i promote the deflection of the pressure receiving portion 17i due to the differential pressure between the front and back surfaces more than in the conventional design, thereby achieving a higher sensitivity than the conventional multi-beam structure.

[0109] 10. Tenth Embodiment Next, a sensor unit according to the tenth embodiment will be described. Figure 13 is a schematic diagram showing the configuration of the sensor unit 2j according to the tenth embodiment. In the sensor unit 2j of the tenth embodiment, a beam portion 23j is provided to promote the deflection of the pressure receiving portion 17j caused by the differential pressure between the front and back surfaces. １ ,23j ２ A key feature is that the thickness of the pressure-receiving plate portion 19j is thinner than the thickness of the pressure-receiving plate portion 19j. Other aspects, such as the configuration including the piezoresistive layer 53, are the same as those of the first embodiment described above, so their explanation will be omitted here. The following explanation will focus mainly on the differences from the first embodiment. Note that the beam portion 23j １ ,23j ２ When there is no need to distinguish between them, they are simply referred to as beam section 23j.

[0110] In this case, the sensor substrate 10j is provided with a plurality of beam portions 23j in the pressure receiving portion forming portion 16j, which are formed to have a thickness smaller than the thickness of the pressure receiving plate portion 19j, as a deflection forming portion. The plurality of beam portions 23j that serve as the fixed ends of the pressure receiving portion 17j are each strip-shaped, with one end integrally formed with the pressure receiving plate portion 19j and the other end integrally formed with the frame 15. The thickness of the beam portions 23j is preferably 0.02 [μm] to 10 [μm], and more preferably 1 [μm] or less.

[0111] The pressure-receiving plate portion 19j is formed in a quadrilateral shape, with one beam portion 23j on one side. １ The two halves are integrally formed, and the other beam portion 23j is attached to the opposite side of the one side. ２ The pressure plate portion 19j is preferably 0.1 [μm] to 50 [μm], and more preferably 5 [μm] or more.

[0112] In this embodiment, the pressure receiving portion 17j has a double-supported beam structure, but the pressure receiving plate portion 19j is formed to be thicker than the beam portion 23j. Therefore, the degree of deformation differs between the pressure receiving plate portion 19j and the beam portion 23j, and the beam portion 23j １ ,23j ２ The expansion and contraction at the base and the pressure-receiving frame do not cancel each other out. Therefore, the metal layer 54a as in the first embodiment described above is unnecessary.

[0113] As described above, the sensor substrate 10j according to the tenth embodiment can achieve the same effects as the first embodiment described above. The thinner beam portion 23j promotes the deflection of the pressure receiving portion 17j more than in the conventional design due to the differential pressure between the front and back surfaces, thereby achieving a higher sensitivity than the conventional multi-beam structure.

[0114] 11. Eleventh Embodiment Next, a sensor unit according to the eleventh embodiment will be described. Figure 14 is a schematic diagram showing the configuration of the sensor unit 2k according to the eleventh embodiment. The sensor unit 2k of the eleventh embodiment has a plurality of pressure receiving parts 17k １ ~17k ４A sensor substrate 10k is provided. The sensor substrate 10k has a frame 15k and a pressure receiving portion forming portion 16k. The sensor substrate 10k has an annular frame 15k that surrounds the quadrilateral pressure receiving portion forming portion 16k. The sensor substrate 10k is positioned on the fixing member 11 such that the frame 15k is fixed to the annular frame portion 11b of the fixing member 11 and the pressure receiving portion forming portion 16k is located in the opening 11a (see Figure 3) of the fixing member 11.

[0115] In this embodiment, the frame 15k does not have the metal layer 54 shown in Figure 4 on its surface, and instead has a structure in which the silicon substrate 50, insulating layer 51, silicon layer 52, and piezoresistive layer 53 shown in Figure 4 are laminated. The pressure receiving section forming section 16k has a plurality of pressure receiving sections 17k １ ~17k ４ A pressure receiving section 17k is provided. In this embodiment, a pressure receiving section 17k １ ~17k ４ Since all of them have the same configuration, here we will mainly focus on one pressure-receiving section 17k １ The following explanation will focus on this point. Also, the pressure receiving section 17k １ ~17k ４ When there is no need to distinguish between them, they are simply referred to as the pressure-receiving section 17k. The pressure-receiving section 17k consists of a structure in which the silicon layer 52 and the piezoresistive layer 53 shown in Figure 4 are laminated.

[0116] Frame 15k has a beam section 23k provided in the pressure receiving section 17k. １ ,23k ２ Each (described later) is provided with a pair of insulating grooves 9k. The insulating grooves 9k have a structure in which the piezoresistive layer 53 is removed and a silicon layer 52, an insulating layer 51, and a silicon substrate 50 (see Figure 4) are laminated. Between the pairs of insulating grooves 9k of the frame 15k are beam sections 23k １ ,23k ２ Each has a base end 57 which is integrally formed with the end of the part.

[0117] The pressure-receiving section 17k is a pair of beam sections 23k １ ,23k ２The structure includes a pressure-receiving plate portion 19k and a plurality of beam portions (hereinafter simply referred to as connecting beam portions) 59 that connect the pressure-receiving plate portion 19k and other adjacent pressure-receiving plate portions 19k. １ ,23k ２ Unless otherwise specified, it is simply referred to as beam section 23k.

[0118] The pressure-receiving plate portion 19k has notches 61 formed along both opposing sides of the beam portion 23k, each penetrating through its thickness. The beam portion 23k is formed in a beam shape with both sides separated from the pressure-receiving plate portion 19k by a pair of parallel notches 61. One end of the beam portion 23k is integrally formed with the base end 57 of the frame 15k, and only the other end is integrally formed with the pressure-receiving plate portion 19k, thereby supporting the pressure-receiving plate portion 19k on the frame 15k.

[0119] The pressure-receiving plate portion 19k is formed in a roughly triangular shape, and the pair of beam portions 23k １ ,23k ２ A beam portion 23k is provided on one side and is supported by the frame 15k. On the surface of the pressure-receiving plate portion 19k (the surface of the piezoresistive layer 53), a pair of beam portions 23k １ ,23k ２ A strip-shaped metal layer 54k is provided to connect one end of the structure. One side of the pressure-receiving plate portion 19k and the frame 15k are separated by a notch 62.

[0120] Each pressure-receiving plate portion 19k has two adjacent ends arranged in a "V" shape, with a vertex where the ends are joined. Each end of the pressure-receiving plate portion 19k is positioned opposite the end of another adjacent pressure-receiving plate portion 19k. Multiple pressure-receiving plate portions 19k are positioned so that they close the pressure-receiving portion forming portion 16k within the frame 15k, with the vertices of their respective end ends positioned at the center of the pressure-receiving portion forming portion 16k. A notch 63 is provided between the end ends of adjacent pressure-receiving plate portions 19k, penetrating through the thickness. The adjacent end ends are separated by the notch 63.

[0121] The gap dimensions between the notches 61, 62, and 63 are preferably 0.02 [μm] to 10 [μm], and more preferably 1 [μm] or less. By narrowing the gap dimensions between the notches 61, 62, and 63, it is possible to easily generate a differential pressure on the front and back surfaces of the pressure receiving section 17k when it receives the wave W to be detected.

[0122] A pair of connecting beams 59 are integrally formed at the tip of each pressure-receiving plate 19k, serving as deflection-forming sections. The pair of connecting beams 59 connect the tip of one pressure-receiving plate 19k to the tip of another adjacent pressure-receiving plate 19k. The connecting beams 59 are formed to be thinner and shorter than the beams 23k.

[0123] The length dimension of the connecting beam portion 59 is the same as the gap dimension of the cut portion 63, preferably 0.02 [μm] to 10 [μm], and more preferably 1 [μm] or less. The width dimension of the connecting beam portion 59 is preferably 0.1 [μm] to 50 [μm], and more preferably 5 [μm] or less. By making the connecting beam portion 59 thinner than the beam portion 23k, the pressure receiving portion 17k can be deformed even more easily by the differential pressure between the front and back surfaces.

[0124] Here, one of the beam sections 23k １ One of the integrally formed base portions 57k is connected to one electrode (not shown), and the other beam portion 23k ２ The other base end portion 57k, which is integrally formed, has another electrode (not shown) connected to it. The sensor substrate 10k has a pair of beam portions 23k １ ,23k ２ A metal layer 54k is provided so as to connect one end. Therefore, from one electrode to the other base end 57k １ After passing through one beam section 23k １ The current that flows through one section flows through the metal layer 54k with low resistance, and through the other beam section 23k ２ The current flows through the other base end 57k to the other electrode. In the pressure-receiving section 17k, the electrical resistance of the piezoresistive layer 53 (Figure 4) increases or decreases as the beam section 23k deforms.

[0125] In the sensor substrate 10k according to the 11th embodiment, the frame 15k is provided with a plurality of beam portions 23k that support one side of the pressure receiving plate portion, and connecting beam portions 59 that connect the other sides (tip edges) of adjacent pressure receiving plate portions 19k, thereby supporting each of the pressure receiving plate portions 19k in a double-supported beam manner. Thus, in the sensor substrate 10k, the pressure receiving plate portion 19k is not supported in a double-supported beam manner by the beam portions 23k, but rather the other side (tip edge) of the pressure receiving plate portion 19k is supported by the connecting beam portions 59, which are thinner than the beam portions 23k.

[0126] Furthermore, since the connecting beam portion 59 is connected to an adjacent pressure-receiving plate portion 19k that is easily affected by the differential pressure between the front and back surfaces, the connecting beam portion 59 changes in conjunction with the changes in the pressure-receiving plate portion 19k, and consequently, the beam portion 23k also changes more easily. As a result, the deflection of the pressure-receiving portion 17k is promoted more than in the conventional design. Therefore, the sensor substrate 10k can achieve the same effects as in the first embodiment described above, and the connecting beam portion 59, which is thinner than the beam portion 23k, promotes the deflection of the pressure-receiving portion 17k more than in the conventional design due to the differential pressure between the front and back surfaces, thereby achieving a higher sensitivity than the conventional multi-beam structure.

[0127] 12. Twelfth Embodiment In the first to eleventh embodiments described above, a configuration in which two electrodes 15a and 15b are provided was described. However, the present invention is not limited to this, and a configuration in which multiple electrodes, such as three or more, are provided, or a configuration in which an electrode is provided for each beam section, may also be used. For example, in the first embodiment, a pair of insulating grooves 9a are formed in the frame 15 and two electrodes 15a and 15b are provided in the frame 15, and one electrode 15a is connected to one of the pair of beam sections 23a １ Connect the other electrode 15b to the other pair of beams 23a ２ The configuration involves connecting the following:

[0128] Figure 15 shows the beam section 23m １ ,23m ２ ,23m ３ ,23m ４ Each corresponding electrode is 15m １ , 15m ２ , 15m ３ , 15m ４ This is a perspective view showing the configuration of the sensor unit 2m, which is provided with each of the following: １ ,9a２ ,9a ３ ,9a ４ Four electrodes 15m １ , 15m ２ , 15m ３ , 15m ４ The frame 15 has four notches 47a １ , 47a ２ , 47a ３ , 47a ４ The difference from the first embodiment is that the pressure receiving portion forming portion 16 is provided therein. The following explanation will focus on the differences from the first embodiment.

[0129] Insulating groove 9a １ ,9a ２ ,9a ３ ,9a ４ Unless otherwise specified, it is simply referred to as the insulating groove 9a, and electrode 15m １ , 15m ２ , 15m ３ , 15m ４ Unless otherwise specified, it is simply referred to as electrode 15m. Also, the notched portion 47a １ , 47a ２ , 47a ３ , 47a ４ Unless otherwise specified, it is simply referred to as the notched portion 47a.

[0130] In this case, there are four insulating grooves 9a １ ,9a ２ ,9a ３ ,9a ４ The frame 15 is formed to be divided into four sections. Of these, the insulating groove 9a １ ,9a ２ An insulating groove 9a is formed in the frame 15 so as to face each other in the y-axis direction. ３ ,9a ４ The groove is formed so as to face the x-axis direction. The insulating groove 9a has been constructed by removing the metal layer 54 and the piezoresistive layer 53 shown in Figure 4, and laminating the silicon layer 52, insulating layer 51, and silicon substrate 50.

[0131] Adjacent electrodes 15m are insulated by insulating grooves 9a. In this embodiment, insulating grooves 9a １ ,9a ３The area demarcated by the electrode is 15m １ The insulating groove 9a ２ ,9a ３ The area demarcated by the electrode is 15m ２ The insulating groove 9a １ ,9a ４ The area demarcated by the electrode is 15m ３ The insulating groove 9a ２ ,9a ４ The area demarcated by the electrode is 15m ４ The adjacent electrodes 15m are separated and insulated by an insulating groove 9a.

[0132] The pressure receiving section forming section 16 has four beam sections 23m, similar to the first embodiment described above. １ ,23m ２ ,23m ３ ,23m ４ A pressure-receiving section 17a is formed having the following: Beam section 23m １ ,23m ２ ,23m ３ ,23m ４ Unless otherwise specified, these are simply referred to as beam sections 23m. Each beam section 23m has a structure in which a silicon layer 52 and a piezoresistive layer 53, as shown in Figure 4, are laminated. Each beam section 23m is integrally formed with the silicon layer 52 and piezoresistive layer 53 located beneath the corresponding electrode 15m.

[0133] As a result, the beam section is 23m １ The electrode is 15m １ Connect only to the other electrodes 15m ２ , 15m ３ , 15m ４ This configuration is insulated from the other. Similarly, the beam section 23m ２ The electrode is 15m ２ It connects only to the beam section 23m ３ The electrode is 15m ３ It connects only to the beam section 23m ４ The electrode is 15m ４ Connects only to [this].

[0134] The pressure-receiving portion forming portion 16 has pressure-receiving side portions 18a that face each other. １ , 18a ２ Between them, a notch 47a that penetrates the thickness.１ , 47a ２ A notch 47a is formed. １ , 47a ２ This is the insulating groove 9a １ ,9a ２ It is formed in a continuous manner with the adjacent pressure-receiving side portion 18a １ , 18a ２ This is the notched portion 47a １ , 47a ２ They are separated and isolated by this.

[0135] Furthermore, the pressure receiving section forming section 16 has insulating cutouts 47a that penetrate the thickness between the opposing pressure receiving beam sections 20a. ３ , 47a ４ A notch 47a is formed. ３ , 47a ４ This is the insulating groove 9a ３ ,9a ４ It is formed in a continuous manner. The adjacent pressure-receiving beam section 20a has a notched section 47a ３ , 47a ４ They are separated and isolated by this.

[0136] The pressure receiving frame portion 29b of the pressure receiving plate portion 19a is a pair of beam portions 23m １ ,23m ２ (and the other pair of beam sections 23m) ３ ,23m ４ The end of the pressure receiving frame portion 29b is an integrally formed edge, and a strip-shaped metal layer 54m is provided on the surface of the pressure receiving frame portion 29b.

[0137] In the pressure receiving section 17m, a metal layer 54m is provided on one of the pressure receiving frame sections 29b, thereby enabling one of the electrodes 15m １ From there, one of the paired beam sections, 23m １ , metal layer 54m, other beam section 23m ２ After that, the other electrode 15m ２ Current flows up to this point. Also, in the pressure receiving section 17m, a metal layer 54m is similarly provided on the other pressure receiving frame section 29b which is on the opposite side, so that one electrode 15m ３ From there, one of the paired beam sections, 23m ３ , metal layer 54m, other beam section 23m ４ After that, the other electrode 15m ４ The current flows up to this point.

[0138] The pressure-receiving section 17m is elastically deformable in the direction normal to the surface (up and down in Figure 15), with the fixed end of the beam section 23m as the pivot point, due to the differential pressure between its front and back surfaces. By deforming the pressure-receiving section 17m with the fixed end of the beam section 23m as the pivot point, the electrical resistance of the piezoresistive layer 53 increases or decreases. Therefore, in the sensor substrate 10m, one electrode 15m １ , 15m ２ The beam section is 23m long. １ ,23m ２ The electrical resistance of the piezoresistive layer 53 caused by deformation is measured, and the other electrode 15m ３ , 15m ４ Similarly, the beam section is 23m ３ ,23m ４ The electrical resistance of the piezoresistive layer 53 caused by deformation can be measured. As a result, the sensor substrate 10m can detect changes in differential pressure between the front and back surfaces based on the obtained measurement results.

[0139] As described above, in the sensor substrate 10m according to the 12th embodiment, the physical strength is reduced by the amount of multiple notches 31a provided in the pressure-receiving portion 17m, similar to the first embodiment described above. Therefore, the deflection of the pressure-receiving portion 17m caused by the differential pressure between the front and back surfaces is promoted more than in the conventional structure, and as a result, a higher sensitivity can be achieved than in the conventional multi-beam structure. In addition to this, in the sensor substrate 10m, one electrode 15m １ , 15m ２ Between them, and the other electrode 15m ３ , 15m ４ Since the electrical resistance due to the deformation of the 23m beam can be measured at both points, the change in differential pressure between the front and back surfaces can be reliably detected.

[0140] 13. In the embodiments described above, the sensor units 2a to 2m are each placed in the atmosphere to detect the target wave W from the target object 100, but the present invention is not limited to this. For example, the sensor units 2a to 2m may be placed in other gases or fluids such as water, in addition to the atmosphere, and structures or living organisms placed in the fluid may be used as the target objects. Sound waves or vibration waves generated from the target objects and propagating through the fluid may be detected as the target wave W by the sensor units 2a to 2m placed in the fluid.

[0141] Furthermore, a sensor board may be formed by appropriately combining the configurations of the sensor boards 10a to 10m of each embodiment described above. Examples of combinations of each embodiment include the notched portion 31a shown in Figure 2, the notched portion 31b shown in Figure 5, the notched portion 31c shown in Figure 6, and the notched portion 31d shown in Figure 7. １ ,31d ２ The pressure receiving plate may have a mixture of various shapes of cutouts.

[0142] Furthermore, as combinations of each embodiment, for example, the pressure receiving plate portion 19e shown in Figure 8, the pressure receiving plate portion 19f shown in Figure 9, the pressure receiving plate portion 19g shown in Figure 10, the pressure receiving plate portion 19h shown in Figures 11A and 11B, the pressure receiving plate portion 19i shown in Figure 12, the pressure receiving plate portion 19j shown in Figure 13, and the pressure receiving plate portion 19k shown in Figure 14, along with the notched portion 31a shown in Figure 2, the notched portion 31b shown in Figure 5, the notched portion 31c shown in Figure 6, and the notched portion 31d shown in Figure 7. １ ,31d ２ Various shapes of notches may be provided.

[0143] Furthermore, combinations of each embodiment include, for example, the beam section 23e shown in Figure 8, and the serpentine beam sections 23g, 23h, 23h shown in Figures 10, 11A, and 11B. ３ , 23h ４ The pressure receiving section may also consist of a mixture of beam sections of various shapes, such as the beam section 23i shown in Figure 12. For example, in the ninth embodiment, a strip-shaped beam section 23a is attached to one side of the pressure receiving plate section 19i. １In this configuration, a serpentine beam portion 23h (Figure 11) is provided on one side of the pressure-receiving plate portion 19i, and a beam portion 23i extending radially is provided on the other side of the pressure-receiving plate portion 19i. However, the present invention is not limited to this configuration. For example, a serpentine beam portion 23h (Figure 11) may be provided on one side of the pressure-receiving plate portion 19i, and a beam portion 23i extending radially may be provided on the other side of the pressure-receiving plate portion 19i. Alternatively, a serpentine beam portion 23h and a radially extending beam portion 23i may be provided in pairs on one side of the pressure-receiving plate portion 19i, or a serpentine beam portion 23h may be provided that extends radially. Furthermore, the serpentine beam portion 23g shown in Figure 10 may be provided on both the opposing side and the other side of the pressure-receiving plate portion 19g, so that the pressure-receiving plate portion 19g can also be deformed in the planar direction of the pressure-receiving plate portion 19g.

[0144] Furthermore, the notched portion may have notches extending in the width direction perpendicular to the longitudinal direction of the pressure-receiving plate, as well as notches extending in the longitudinal direction and other directions of the pressure-receiving plate. Also, the long plate portion formed on the pressure-receiving plate together with the notched portion may not only be a long plate portion 30 extending in the width direction perpendicular to the longitudinal direction of the pressure-receiving plate, but may also be a long plate portion extending in the longitudinal direction and other directions of the pressure-receiving plate. In addition, although the beam portion provided as the deflection-forming portion has been described as one or more beam portions formed to be longer than the longitudinal length of the pressure-receiving plate, if the pressure-receiving plate is circular, elliptical, etc., one or more beam portions formed to be longer than the diameter of the pressure-receiving portion may also be used.

[0145] 1a Detection device 3 Circuit section 10a-10m Sensor substrate 15 Frame 17a-17m Pressure receiving section 19a-19k Pressure receiving plate section 23e, 23i Beam section 23f １ ,23f ２ ,23f ３ ,23f ４ Spiral beam section (flexible section, beam section) 23g, 23h, 23h ３ , 23h ４ Serpentine beam section (flexure-forming section, beam section) 31a, 31b, 31c, 31d １ ,31d ２ Cut section (flexible section) 59 Connecting beam section (flexible section, beam section)

Claims

Frame and, A pressure-receiving section is provided in the frame in the form of a double-supported beam, A deflection-forming section that promotes deflection caused by the differential pressure between the front and back surfaces of the pressure-receiving section, Equipped with, A sensor board in which the electrical resistance changes in response to a change in the pressure-receiving portion. 　 The pressure receiving section is The frame is equipped with a pressure-receiving plate portion that is supported in a cantilevered beam-like manner by the beam portion, The deflection-forming portion is one or more notches that penetrate the thickness of the pressure-receiving plate portion. The sensor substrate according to claim 1. 　 The aforementioned cut portion extends in the width direction perpendicular to the longitudinal direction of the pressure receiving plate portion. The sensor substrate according to claim 2. 　 The pressure-receiving plate portion has a notched portion in which one or more of the notches are formed, and a long plate portion in which the notches are not formed. The sensor substrate according to claim 2 or 3. 　 The pressure receiving section includes a pressure receiving plate section, The deflection forming portion is one or more beam portions that support the pressure receiving plate portion on the frame and are formed to be longer than the longitudinal length of the pressure receiving plate portion or the diameter of the pressure receiving plate portion. The sensor substrate according to claim 1. 　 The pressure receiving section includes a pressure receiving plate section, The deflection-forming portion is a plurality of beam portions extending radially from the pressure-receiving plate portion. The sensor substrate according to claim 1. 　 The pressure receiving section includes a pressure receiving plate section, The deflection forming portion is a plurality of beams that support the pressure receiving plate portion in a cantilevered beam manner on the frame, The plurality of beam sections are formed in a spiral shape so as to gradually approach the pressure-receiving plate section from the frame along the outer circumference of the pressure-receiving plate section. The sensor substrate according to claim 1. 　 The pressure receiving section includes a pressure receiving plate section, The aforementioned deflection-forming portion is a serpentine beam portion that supports the pressure-receiving portion within the frame. The sensor substrate according to claim 1. 　 The pressure receiving section includes a pressure receiving plate section, The deflection forming portion is a plurality of beams that support the pressure receiving plate portion in a cantilevered beam manner on the frame, The plurality of beam sections are formed with a thickness thinner than the thickness of the pressure-receiving plate section. The sensor substrate according to claim 1. 　 The pressure receiving section is Pressure plate section, The frame comprises a plurality of beams that support one side of the pressure-receiving plate portion, Multiple pressure-receiving plates are provided within the frame. The deflection-forming portion is a connecting beam portion that connects the other sides of adjacent pressure-receiving plate portions. The sensor substrate according to claim 1. 　 A detection device for detecting differential pressure, Sensor board and A circuit unit that obtains a predetermined measurement result based on the electrical resistance generated in the sensor substrate, Equipped with, The aforementioned sensor board is Frame and, The frame has a pressure-receiving section supported in a double-supported beam manner, A deflection-forming section that promotes deflection caused by the differential pressure between the front and back surfaces of the pressure-receiving section, Equipped with, A detection device in which the electrical resistance changes in response to a change in the pressure-receiving part.

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