Substrate processing device, matching device, substrate processing method, semiconductor device production method, and program

Abstract

Provided is a technology that enables rapid processing of a substrate even when a plurality of types of plasma are used. The technology provided comprises: a processing chamber for processing a substrate; a plasma generation unit that is supplied with high-frequency power from a high-frequency power source and that generates plasma in the processing chamber; a matching unit provided with a first capacitor, a second capacitor, and a switching unit connected to the second capacitor; and a control unit configured so as to be capable of switching the switching unit in accordance with the type of gas to be turned into plasma by the plasma generation unit.

Description

Substrate processing apparatus, matching unit, substrate processing method, semiconductor device manufacturing method and program

[0001] This disclosure relates to a substrate processing apparatus, a matching device, a substrate processing method, a semiconductor device manufacturing method, and a program.

[0002] As part of the manufacturing process for semiconductor devices, substrate processing is sometimes performed in which a substrate is brought into a processing chamber of a substrate processing apparatus, and raw material gases and reaction gases are supplied into the processing chamber to form various films such as insulating films, semiconductor films, and conductive films on the substrate, or to remove various films.

[0003] In mass-produced devices requiring low-temperature processing, such as during fine pattern formation, it is necessary to supply a significantly larger amount of activated reaction gas than usual to prevent the surface reaction of the wafer processing from becoming rate-limiting.

[0004] Japanese Patent Publication No. 2007-324477

[0005] To solve these problems, it is common practice to process substrates using multiple types of plasma, but because high-frequency impedance matching takes time, it can be difficult to process films in a short amount of time.

[0006] The purpose of this disclosure is to provide a technology that enables substrate processing in a short time, even when using multiple types of plasma.

[0007] The technology provided includes: a processing chamber for processing a substrate; a plasma generation unit to which high-frequency power is supplied from a high-frequency power supply to generate plasma in the processing chamber; a matching unit comprising a first capacitor, a second capacitor, and a switching unit connected to the second capacitor; and a control unit configured to switch the switching unit according to the type of gas to be plasmaized by the plasma generation unit.

[0008] According to this disclosure, it is possible to process substrates in a short time even when using multiple types of plasma.

[0009] This is a schematic diagram of a vertical processing furnace of a substrate processing apparatus preferably used in the first embodiment of this disclosure, showing the processing furnace portion in a vertical cross-section. This is a cross-sectional view taken along line A-A in the substrate processing apparatus shown in Figure 1. This is a diagram showing an example of the equivalent electrical circuit of a matching device in the first embodiment of this disclosure. This is a diagram showing a modified example of the equivalent electrical circuit of a matching device in the second embodiment of this disclosure. This is a matrix diagram showing the relationship between the combined electrical capacitance obtained from the ON / OFF combination of a plurality of switches, the impedance matching range, and the first and second type reaction gas plasmas that can achieve impedance matching. This is a Smith chart showing the relationship between the combined electrical capacitance obtained from the ON / OFF combination of a plurality of switches, the impedance matching range, and the first and second type reaction gas plasmas that can achieve impedance matching. This is a schematic diagram of the controller in the substrate processing apparatus shown in Figure 1, and is a block diagram showing an example of the controller's control system. This is a flowchart showing an example of a substrate processing process using the substrate processing apparatus shown in Figure 1.

[0010] The following description will explain one form of this disclosure, primarily with reference to Figures 1 to 4. It should be noted that the drawings used in the following description are schematic, and the dimensional relationships and proportions of the elements shown in the drawings do not necessarily correspond to reality. Furthermore, the dimensional relationships and proportions of the elements do not necessarily correspond between multiple drawings.

[0011] (First Embodiment) (1) Configuration of Substrate Processing Apparatus (Heating Device) (Heating Device) As shown in Figure 1, the processing furnace 202 has a heater 207 as a heating device (heating mechanism, heating unit) for heating the substrate (wafer) 200. The heater 207 is cylindrical and is mounted vertically by being supported by a heater base (not shown) as a holding plate. The heater 207 is also provided on the outside of an electrode fixing device 301, which will be described later as an electrode fixing jig. The heater 207 also functions as an activation mechanism (excitation unit) that activates (excites) gas with heat, as will be described later.

[0012] (Processing Chamber) Inside the heater 207, an electrode fixing device 301, which will be described later as an electrode fixing jig, is arranged, and inside the electrode fixing device 301, the electrode 300 of the plasma generation section, which will be described later, is arranged. Furthermore, inside the electrode 300, a reaction tube 203 is arranged concentrically with the heater 207. The reaction tube 203 is made of, for example, quartz (SiO ２ The reaction tube 203 is made of a heat-resistant material such as silicon carbide (SiC) or silicon nitride (SiN), and is formed in a cylindrical shape with a closed upper end and an open lower end. Below the reaction tube 203, a manifold 209 is arranged concentrically with the reaction tube 203. The manifold 209 is made of a metal such as stainless steel (SUS), and is formed in a cylindrical shape with open upper and lower ends. The upper end of the manifold 209 engages with the lower end of the reaction tube 203 and is configured to support the reaction tube 203. An O-ring 220a is provided between the manifold 209 and the reaction tube 203 as a sealing member. The manifold 209 is supported by a heater base, so that the reaction tube 203 is installed vertically. The reaction vessel (reaction vessel) is mainly composed of the reaction tube 203 and the manifold 209. A processing chamber 201 is formed in the hollow cylindrical part of the processing vessel. The processing chamber 201 is configured to accommodate multiple wafers 200 as substrates. The reaction tube 203 forms the processing chamber 201 for processing the wafers 200. Note that the processing container is not limited to the above configuration, and the reaction tube 203 alone may also be referred to as the processing container.

[0013] (Gas Supply Section) Inside the processing chamber 201, nozzles 249a and 249b, which serve as the first and second supply sections, are provided so as to penetrate the side walls of the manifold 209. Nozzles 249a and 249b are also referred to as the first and second nozzles, respectively. Nozzles 249a and 249b are made of a heat-resistant material such as quartz or SiC. Gas supply pipes 232a and 232b are connected to nozzles 249a and 249b, respectively. In this way, the processing vessel is provided with two nozzles 249a and 249b and two gas supply pipes 232a and 232b, making it possible to supply multiple types of gas into the processing chamber 201. Note that if only the reaction pipe 203 is used as the processing vessel, the nozzles 249a and 249b may be provided so as to penetrate the side walls of the reaction pipe 203.

[0014] Gas supply pipes 232a and 232b are equipped with, in order from the upstream side of the gas flow, mass flow controllers (MFCs) 241a and 241b, which are flow control devices (flow control units), and valves 243a and 243b, which are on-off valves. Downstream of valves 243a and 243b in gas supply pipes 232a and 232b, gas supply pipes 232c and 232d, which supply inert gas, are connected, respectively. Gas supply pipes 232c and 232d are equipped with, in order from the upstream side, MFCs 241c and 241d and valves 243c and 243d, respectively.

[0015] As shown in Figures 1 and 2, nozzles 249a and 249b are provided in an annular space in plan view between the inner wall of the reaction tube 203 and the wafer 200, extending from the lower to the upper part of the inner wall of the reaction tube 203, rising upward in the direction of wafer 200 stacking. That is, nozzles 249a and 249b are provided perpendicular to the surface (flat surface) of each wafer 200 that has been brought into the processing chamber 201, on the side of the edge (periphery) of the wafer 200. Gas supply holes 250a and 250b are provided on the sides of nozzles 249a and 249b, respectively, for supplying gas. Gas supply hole 250a opens towards the center of the reaction tube 203, making it possible to supply gas toward the wafer 200. Multiple gas supply holes 250a and 250b are provided, extending from the lower to the upper part of the reaction tube 203.

[0016] In this embodiment, gas is transported via nozzles 249a and 249b, which are positioned in a cylindrical space, i.e., within an annular, vertically elongated space in plan view, defined by the inner wall of the side wall of the reaction tube 203 and the edges (periphery) of the multiple wafers 200 arranged inside the reaction tube 203. Gas is then ejected into the reaction tube 203 for the first time near the wafers 200 from gas supply holes 250a and 250b, respectively, which are opened in the nozzles 249a and 249b. The main flow of gas inside the reaction tube 203 is in a direction parallel to the surface of the wafers 200, i.e., horizontally. With this configuration, gas can be supplied uniformly to each wafer 200, making it possible to improve the uniformity of the film thickness formed on each wafer 200. The gas that has flowed over the surface of the wafers 200, i.e., the residual gas after the reaction, flows toward the exhaust port, i.e., the exhaust pipe 231, which will be described later. However, the direction of this residual gas flow is determined appropriately by the location of the exhaust port and is not limited to the vertical direction.

[0017] From the gas supply pipe 232a, the raw material (raw material gas) is supplied into the processing chamber 201 via the MFC 241a, valve 243a, and nozzle 249a.

[0018] From the gas supply pipe 232b, the reactant (reaction gas) is supplied into the processing chamber 201 via the MFC 241b, valve 243b, and nozzle 249b.

[0019] Inert gas is supplied from gas supply pipes 232c and 232d into the processing chamber 201 via MFCs 241c and 241d, valves 243c and 243d, and nozzles 249a and 249b, respectively.

[0020] The raw material supply system, which serves as the first gas supply system, is mainly composed of gas supply pipes 232a, MFC 241a, and valve 243a. The reactant supply system (reaction gas supply system), which serves as the second gas supply system, is mainly composed of gas supply pipes 232b, MFC 241b, and valve 243b. The inert gas supply system is mainly composed of gas supply pipes 232c, 232d, MFC 241c, 241d, and valves 243c, 243d. The raw material supply system, reactant supply system, and inert gas supply system are also simply referred to as the gas supply system (gas supply section).

[0021] (Substrate Support) As shown in Figure 1, the boat 217, which serves as a substrate support, is configured to support multiple wafers 200, for example 25 to 200 wafers 200, in a horizontal position and aligned vertically with their centers aligned, in multiple stages, that is, arranged with spacing between them. The boat 217 is made of a heat-resistant material such as quartz or SiC. At the bottom of the boat 217, a heat-insulating plate 218, made of a heat-resistant material such as quartz or SiC, is supported in multiple stages. This configuration makes it difficult for heat from the heater 207 to be transferred to the seal cap 219 side. However, this embodiment is not limited to this configuration. For example, instead of providing a heat-insulating plate 218 at the bottom of the boat 217, a heat-insulating cylinder, which is a cylindrical member made of a heat-resistant material such as quartz or SiC, may be provided.

[0022] (Plasma generation section) Next, the plasma generation section will be explained using Figures 1 to 5.

[0023] Outside the reaction tube 203, that is, outside the processing vessel (processing chamber 201), an electrode 300 for plasma generation is provided as a plasma generation unit. By applying power to the electrode 300, it is possible to excite the gas inside the reaction tube 203, that is, inside the processing vessel (processing chamber 201), that is, to excite the gas into a plasma state. Hereinafter, by simply applying power to excite the gas into a plasma state, the system is configured to generate capacitively coupled plasma (CCP) inside the reaction tube 203, that is, inside the processing vessel (processing chamber 201).

[0024] Specifically, as shown in Figure 2, an electrode 300 and an electrode fixing device 301 for fixing the electrode 300 are arranged between the heater 207 and the reaction tube 203. The electrode fixing device 301 is arranged inside the heater 207, the electrode 300 is arranged inside the electrode fixing device 301, and the reaction tube 203 is arranged inside the electrode 300.

[0025] Furthermore, as shown in Figures 1 and 2, the electrode 300 and electrode holder 301 are provided in an annular space in plan view between the inner wall of the heater 207 and the outer wall of the reaction tube 203, extending along the upper part of the outer wall of the reaction tube 203 from the lower part, in the direction of wafer 200 arrangement. The electrode 300 is provided parallel to the nozzles 249a and 249b. In plan view, the electrode 300 and electrode holder 301 are arranged and positioned concentrically with the reaction tube 203 and the heater 207, and not in contact with the heater 207. The electrode holder 301 is made of an insulating material (insulator) and is provided to cover at least a part of the electrode 300 and the reaction tube 203. Therefore, the electrode holder 301 can also be referred to as a cover (quartz cover, insulating wall, insulating plate), or a cross-sectional arc cover (cross-sectional arc body, cross-sectional arc wall).

[0026] As shown in Figure 2, multiple electrodes 300 are provided, and these multiple electrodes 300 are fixed and installed on the inner wall of the electrode fixing device 301. More specifically, the inner wall surface of the electrode fixing device 301 is provided with projections (hooks) on which the electrodes 300 can be hooked, and the electrodes 300 are provided with openings, which are through holes, through which the projections can be inserted. By hooking the electrodes 300 onto the projections provided on the inner wall surface of the electrode fixing device 301 through the openings, the electrodes 300 can be fixed to the electrode fixing device 301. Figure 2 shows an example in which nine electrodes 300 are fixed to one electrode fixing device 301, and the configuration (unit) consists of two sets.

[0027] Here, the electrode fixing device 301 and the electrode 300 can also be referred to as an electrode unit. Preferably, the electrode unit is positioned to avoid the nozzles 249a, 249b and the exhaust pipe 231, as shown in Figure 2. Figure 2 shows an example in which two electrode units are positioned opposite each other across the center of the wafer 200 (reaction tube 203), avoiding the nozzles 249a, 249b and the exhaust pipe 231. Note that Figure 2 also shows an example in which the two electrode units are positioned symmetrically with respect to the line L as the axis of symmetry in a plan view. By arranging the electrode unit in this way, it becomes possible to position the nozzles 249a, 249b, the temperature sensor 263 and the exhaust pipe 231 outside the plasma generation region within the processing chamber 201, thereby suppressing plasma damage to these components, wear and tear on these components, and the generation of particles from these components. In this disclosure, unless otherwise specified, the electrode 300 will be used in the description.

[0028] A high frequency of, for example, 25 MHz to 35 MHz, more specifically 27.12 MHz, is input to the electrode 300 from the high-frequency power supply 320 via the matching unit 325, thereby generating plasma (active species) 302 in the reaction tube 203. This generated plasma makes it possible to supply plasma 302 for substrate processing to the surface of the wafer 200 from around the wafer 200. The high-frequency power is configured to be supplied from the lower side (lower end) of the electrode 300. The plasma generation unit mainly consists of the electrode 300 and the high-frequency power supply 320. The plasma generation unit may also be considered to include the matching unit (impedance matching unit) 325 and the electrode fixing fixture 301, which will be described later, as electrode fixing jigs.

[0029] Primarily, the plasma generation unit (plasma excitation unit, plasma activation mechanism) that excites (activates) the gas into a plasma state is composed of electrodes 300, namely, a first-type electrode 300-1, a second-type electrode 300-2, a third-type electrode 300-3, and a zero-type electrode 300-0. The electrode fixing device 301, the matching unit 325, and the RF power supply 320 may also be considered as part of the plasma generation unit. The matching unit 325 is provided between the high-frequency power supply 320 that outputs a high frequency and the plasma generation unit. Furthermore, as shown in Figure 2, the vertical substrate processing apparatus is provided with multiple high-frequency power supplies 320 and plasma generation units, and the matching unit 325 is provided between each of the multiple high-frequency power supplies 320 and multiple plasma generation units.

[0030] The electrode 300 is preferably constructed with a thickness of 0.1 mm or more and 1 mm or less, and a width of 5 mm or more and 30 mm or less, so as to have sufficient strength and not significantly reduce the efficiency of wafer heating by the heat source. It is also preferable to have a bending structure as a deformation suppression part to prevent deformation due to heating by the heater 207. In this case, since the electrode 300 is placed between the quartz reaction tube 03 and the heater 207, a bending angle of 90° to 175° is appropriate due to space constraints. The electrode surface has a coating formed by thermal oxidation, and since this coating may peel off due to thermal stress and generate particles, care must be taken not to bend it too much.

[0031] (Matching Array) As shown in Figure 3, the matching array 325A of the first embodiment consists of a first matching unit (load matching unit, load unit) 331 connected in parallel to the line (wiring) from the high-frequency power input port (also called an input terminal) 2 to the output port (also called an output terminal) 3, and a second matching unit (phase matching unit, phase unit) 333A connected in series to the line (wiring) from the high-frequency power input port 2 to the output 3. The first matching unit (load unit) 331 has a variable capacitor 332 connected in parallel so as to be located between the high-frequency power input port 2 and the grounding housing. The variable capacitor 332 is varied by a motor drive control (not shown) to an electrical capacitance between approximately 10 and 500 pF.

[0032] The input port 2 can be described as an input section for inputting high-frequency power. The input port 2 is connected to a high-frequency power supply 320. The output port 3 can be described as an output section for outputting high-frequency power. The first matching unit 331 (load unit) and the second matching unit (phase unit) 333 are connected by a connection section (also called a connection terminal) 4. The second matching unit 333 is also connected to the output terminal 3 on the output side. In other words, the matching unit 325 has an input 2, an output 3, a connection section 4, a first matching unit 331 connected between the connection section 4 and ground (GND), and a second matching unit 333 connected between the connection section 4 and the output 3. The output 3, which is the output section, is connected to an electrode 300 provided in a plasma generation section that generates plasma. The second matching unit (phase unit) 333 is also connected to ground (GND). In the first embodiment, the first matching unit 331 is composed of a variable capacitor (load variable capacitor) 332 with a variable capacitance amount.

[0033] The second matching unit (phase unit) 333 has a variable coil 334 and a first capacitor 335 connected in series between the high-frequency input port 2 and the output port 3. Furthermore, it includes a series circuit in which a second capacitor 336 and a switch (relay switch, SW1) 337 acting as the first switching unit are connected in series in parallel with the second capacitor 335. The variable coil 334 is manually controlled by a gear mechanism (not shown) to vary its inductance to approximately 200 to 600 nH.

[0034] Furthermore, the first capacitor 335 has a capacitance of 40 to 80 pH (first capacitance), and the second capacitor 336 has a capacitance of 5 to 10 pH (second capacitance). In other words, the capacitances of the first capacitor 335 and the second capacitor 336 are different, with the capacitance of the first capacitor being greater than that of the second capacitor. The first switch 337 can be independently set to ON or OFF by a control signal (R1) and a relay coil (not shown). By turning the first switch 337 ON and OFF, the combined capacitance in the phase unit 333A can be changed to two different values. Note that the black dots on the circuit indicate connections.

[0035] The first switch 337 is switched ON and OFF by a control signal (R1) from the controller 121, which is a control unit (control device) described later. Specifically, the switch 337 is switched ON / OFF according to the type of gas to be plasma-generated, as described later. For example, in the case of the first gas, the switch 337 is OFF, and in the case of the second gas, the switch 337 is controlled to be ON. In other words, the capacitances of the first capacitor 335 and the second capacitor 336 are appropriately selected and adjusted according to the type of gas to be plasma-generated. In this way, the impedance matching range can be changed by changing the capacitances of the first capacitor 335 and the second capacitor 336 by switching the switching unit (switch) ON / OFF.

[0036] Figure 4 shows the configuration of the matching circuit 325B of the second embodiment. Components identical to those of the matching circuit 325A of the first embodiment are denoted by the same reference numerals, and their descriptions are omitted. As shown in Figure 4, the matching circuit 325B of the second embodiment, similar to the first embodiment, is composed of a first matching unit (load matching unit) 331 connected in parallel to the line from the high-frequency power input port 2 to the output port 3, and a second matching unit (phase matching unit) 333B connected in series to the line from the high-frequency power input port 2 to the output 3.

[0037] The second matching unit (phase unit) 333B of the second embodiment has a variable coil 334 and a first capacitor 335 connected in series between the high-frequency input port 2 and the output port 3. Furthermore, it includes a first series circuit in which a second capacitor 336-1 and a switch 337-1 as a first switching unit are connected in series in parallel with the first capacitor 335, a second series circuit in which a third capacitor 337-2 and a switch 337-2 as a second switching unit are connected in series, and a third series circuit in which a fourth capacitor 337-3 and a switch 337-3 as a third switching unit are connected in series. Furthermore, the first capacitor 335 has a capacitance of 40 to 80 pH (first capacitance), the second capacitor 336-1 has a capacitance of 5 to 10 pH (second capacitance), the third capacitor 336-2 has a capacitance of 10 to 15 pH (third capacitance), and the fourth capacitor 336-3 has a capacitance of 15 to 30 pH (fourth capacitance). In other words, the capacitances of the first capacitor 335, the second capacitor 336-1, the third capacitor 336-2, and the third capacitor 337-3 are different. In this embodiment, an example in which three series circuits are provided has been described, but it is sufficient to provide at least two series circuits.

[0038] The first switching unit (first relay switch, SW1) 337-1 can be set to ON or OFF using a control signal (R1) and a relay coil (not shown). The second switching unit (second relay switch, SW2) 337-2 can be set to ON or OFF using a control signal (R2) and a relay coil (not shown). The third switching unit (third relay switch, SW3) 337-3 can be set to ON or OFF using a control signal (R3) and a relay coil (not shown).

[0039] Figures 5A and 5B show the relationship between the combined capacitance obtained from the ON / OFF combinations of the first switch 337-1, second switch 337-2, and third switch 337-3, and the impedance matching range, and the relationship between the first and second type gas (reaction gas) plasmas for which impedance matching can be achieved, with the capacitances of the first capacitor 335, second capacitor 336-1, third capacitor 336-2, and fourth capacitor 336-3 being o, a, b, and c, respectively. Figure 5A is summarized in a matrix table, and Figure 5B is summarized in a Smith chart. If the impedance (load impedance) of the target reaction gas plasma is known, the impedance matching range can be narrowed to correspond to it, and the number of relay switches and capacitors in the switching section can be reduced. In this second embodiment, the impedance matching ranges A to D corresponding to the impedance of the first gas type (first reaction gas) plasma are targeted as the first impedance group, and the impedance matching ranges E to H corresponding to the impedance of the second gas type (second reaction gas) plasma are targeted as the second impedance matching range group. Therefore, even if the impedance of the plasma of the first gas and the plasma of the second gas are far apart, impedance matching can be achieved by switching the first switch 337-1 to the second switch 337-3, making it possible to achieve impedance matching in a short time. Note that switching between the impedance matching range groups A to D (first impedance matching range group) and the impedance matching range groups E to H (second impedance matching range group) for each gas type can be done, for example, by setting the third capacitance of capacitor 336-3 to a relatively large value compared to the first capacitance of second capacitor 336-1 and the second capacitance of second capacitor 336-2, and then switching the third switch 337-3. When impedance matching is performed automatically, the variable capacitor 332 of the impedance matching unit 325 and the high-frequency power frequency supplied from the high-frequency power supply 320 are changed, and the algorithm of the high-frequency power supply 320 controls the reflected wave to zero.

[0040] The first switch 337-1, the second switch 337-2, and the third switch 337-3 are each switched ON and OFF by control signals (R1), (R2), and (R3) from the controller 121, which is a control unit (control device) described later. Specifically, the first switch 337-1, the second switch 337-2, and the third switch 337-3 are switched ON / OFF depending on the type of gas to be plasma-generated. For example, when the first gas type is excited to a plasma state within impedance matching range A, the control signals (R1), (R2), and (R3) from the controller 121 switch the switching units 337-1, 337-2, and 337-3 all to the OFF position. Furthermore, for example, when a second gas species is excited into a plasma state within impedance matching range E, the first switch 337-1, the second switch 337-2, and the third switch 337-3 are all switched ON by control signals (R1), (R2), and (R3) from the controller 121. In this way, the capacitances of the first capacitor 335, the second capacitor 336-1, the third capacitor 336-2, and the fourth capacitor 336-3 are appropriately selected and adjusted according to the gas species being plasma-generated. This configuration makes it possible to broaden the matching range according to the gas species, thereby stabilizing the generation of plasma. In this way, by changing the capacitances of the first capacitor 335, the second capacitor 336-1, the third capacitor 336-2, and the fourth capacitor 336-2 by turning the first to third switching units (first to second switches) ON / OFF, the impedance matching range groups A to D and E to H can be changed.

[0041] (Exhaust Section) As shown in Figure 1, the reaction tube 203 is provided with an exhaust pipe 231 for exhausting the atmosphere inside the processing chamber 201. The exhaust pipe 231 is connected to a vacuum pump 246, which is a vacuum evacuation device, via a pressure sensor 245, which is a pressure detector (pressure detection unit) for detecting the pressure inside the processing chamber 201, and an APC (Auto Pressure Controller) valve 244, which is an exhaust valve (pressure adjustment unit). The APC valve 244 is configured to allow vacuum evacuation and stopping of vacuum evacuation inside the processing chamber 201 by opening and closing the valve while the vacuum pump 246 is operating, and further, to allow adjustment of the pressure inside the processing chamber 201 by adjusting the valve opening based on the pressure information detected by the pressure sensor 245 while the vacuum pump 246 is operating. The exhaust system mainly consists of the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. The vacuum pump 246 may also be considered as part of the exhaust system. The exhaust pipe 231 is not limited to being provided in the reaction tube 203; it may also be provided in the manifold 209, similar to the nozzles 249a and 249b.

[0042] (Peripheral equipment) Below the manifold 209, a seal cap 219 is provided as a furnace opening cover that can airtightly close the lower end opening of the manifold 209. The seal cap 219 is configured to abut the lower end of the manifold 209 from below in a vertical direction. The seal cap 219 is made of a metal such as SUS and is formed in a disc shape. An O-ring 220b is provided on the upper surface of the seal cap 219 as a sealing member that abuts the lower end of the manifold 209.

[0043] On the side of the seal cap 219 opposite the processing chamber 201, a rotating mechanism 267 for rotating the boat 217 is installed. The rotating shaft 255 of the rotating mechanism 267 passes through the seal cap 219 and is connected to the boat 217. The rotating mechanism 267 is configured to rotate the wafer 200 by rotating the boat 217. The seal cap 219 is configured to be raised and lowered vertically by a boat elevator 115, which is installed vertically outside the reaction tube 203 as a lifting mechanism. The boat elevator 115 is configured to move the boat 217 in and out of the processing chamber 201 by raising and lowering the seal cap 219.

[0044] The boat elevator 115 is configured as a transport device (transport mechanism) for transporting the boat 217, i.e., the wafer 200, to and from the processing chamber 201. Below the manifold 209, a shutter 219s is provided as a furnace opening cover that can airtightly close the lower end opening of the manifold 209 while the seal cap 219 is being lowered by the boat elevator 115. The shutter 219s is made of a metal such as SUS and is formed in a disc shape. An O-ring 220c is provided on the upper surface of the shutter 219s as a sealing member that contacts the lower end of the manifold 209. The opening and closing operation of the shutter 219s (lifting and lowering operation, rotation operation, etc.) is controlled by the shutter opening and closing mechanism 115s.

[0045] A temperature sensor 263 is installed inside the reaction tube 203 as a temperature detector. By adjusting the amount of power supplied to the heater 207 based on the temperature information detected by the temperature sensor 263, the temperature inside the processing chamber 201 is adjusted to the desired temperature distribution. The temperature sensor 263 is installed along the inner wall of the reaction tube 203, similar to the nozzles 249a and 249b.

[0046] (Control Device) Next, the control device will be explained using Figure 4. As shown in Figure 4, the controller 121, which is the control unit (control device), is configured as a computer equipped with a CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, storage device 121c, and I / O port 121d. The RAM 121b, storage device 121c, and I / O port 121d are configured to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122, configured as, for example, a touch panel, is connected to the controller 121.

[0047] The storage device 121c is composed of, for example, flash memory, HDD (Hard Disk Drive), SSD (Solid State Drive), etc. The storage device 121c contains, in a readable format, control programs that control the operation of the substrate processing device, and process recipes that describe the procedures and conditions for the film deposition process described later. The process recipe is a combination of steps in various processes (film deposition processes) described later, which are executed by the controller 121 in the substrate processing device to obtain predetermined results, and functions as a program. Hereinafter, process recipes and control programs will be collectively referred to simply as "programs." Similarly, process recipes will be simply referred to as "recipes." In this specification, the term "program" may include only recipes, only control programs, or both. The RAM 121b is configured as a memory area (work area) where programs and data read by the CPU 121a are temporarily held.

[0048] The I / O port 121d is connected to the MFCs 241a to 241d, valves 243a to 243d, pressure sensor 245, APC valve 244, vacuum pump 246, heater 207, temperature sensor 263, rotary mechanism 267, boat elevator 115, shutter opening / closing mechanism 115s, high-frequency power supply 320, etc.

[0049] The CPU 121a is configured to read and execute a control program from the storage device 121c, and to read a recipe from the storage device 121c in response to input of operation commands from the input / output device 122. The CPU 121a is configured to control the rotation mechanism 267, the flow rate adjustment operation of various gases by the MFCs 241a to 241d, the opening and closing operation of valves 243a to 243d, the opening and closing operation of the APC valve 244 and the pressure adjustment operation of the APC valve 244 based on the pressure sensor 245, the starting and stopping of the vacuum pump 246, the temperature adjustment operation of the heater 207 based on the temperature sensor 263, the forward and reverse rotation of the boat 217 by the rotation mechanism 267, the rotation angle and rotation speed adjustment operation, the raising and lowering operation of the boat 217 by the boat elevator 115, the ON / OFF switching operation of the switching unit 337 of the matching unit 325, the power supply of the high-frequency power supply 320, etc., in accordance with the contents of the read recipe.

[0050] The controller 121 can be configured by installing the above-mentioned program, stored in an external storage device (for example, a magnetic disk such as a hard disk, an optical disk such as a CD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory) 123, onto a computer. The storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these will be collectively referred to simply as recording media. In this specification, the term recording media may include only the storage device 121c, only the external storage device 123, or both. Note that the program may be provided to the computer using communication means such as the Internet or a dedicated line, without using the external storage device 123.

[0051] (2) Substrate Processing Process Using the substrate processing apparatus described above, a manufacturing method for a process in which a film is formed on a substrate as one step in the manufacturing process of a semiconductor device will be explained with reference to Figure 6. Figure 6 is a flowchart showing an example of a substrate processing process using the substrate processing apparatus shown in Figure 1. In the following explanation, the operation of each part constituting the substrate processing apparatus is controlled by the controller 121.

[0052] In this specification, the film deposition sequence shown in Figure 7 may also be shown as follows for convenience.

[0053] (Raw material gas → Type 1 reaction gas → Type 2 reaction gas) × n In this specification, the term "wafer" may refer to the wafer itself or to a laminate of a wafer and a predetermined layer or film formed on its surface. In this specification, the term "surface of the wafer" may refer to the surface of the wafer itself or to the surface of a predetermined layer formed on the wafer. In this specification, the phrase "form a predetermined layer on the wafer" may refer to directly forming a predetermined layer on the surface of the wafer itself or to forming a predetermined layer on top of a layer formed on the wafer. In this specification, the term "substrate" is used in the same sense as the term "wafer".

[0054] (Loading step: S1) When multiple wafers 200 are loaded into the boat 217 (wafer charging), the shutter 219s is moved by the shutter opening / closing mechanism 115s, and the lower end opening of the manifold 209 is opened (shutter open). Then, as shown in Figure 1, the boat 217 supporting the multiple wafers 200 is lifted by the boat elevator 115 and loaded into the processing chamber 201 (boat loading). In this state, the seal cap 219 seals the lower end of the manifold 209 via the O-ring 220b.

[0055] (Pressure and temperature adjustment step: S2) The processing chamber 201 is evacuated (reduced pressure exhaust) by the vacuum pump 246 so that the inside reaches the desired pressure (vacuum level). At this time, the pressure inside the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 244 is feedback controlled based on this measured pressure information (pressure adjustment). The vacuum pump 246 is kept running at all times, at least until the film deposition step described later is completed.

[0056] Furthermore, the processing chamber 201 is heated by the heater 207 to reach a desired temperature. At this time, the amount of power supplied to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 to ensure that the processing chamber 201 has a desired temperature distribution (temperature adjustment). Heating of the processing chamber 201 by the heater 207 is continued at least until the film deposition step described later is completed. However, if the film deposition step is performed under temperature conditions below room temperature, heating of the processing chamber 201 by the heater 207 is not required. In addition, if processing is performed only at such temperatures, the heater 207 is not necessary, and it is not necessary to install the heater 207 in the substrate processing apparatus. In this case, the configuration of the substrate processing apparatus can be simplified.

[0057] Next, the rotation of the boat 217 and wafer 200 by the rotating mechanism 267 is started. The rotation of the boat 217 and wafer 200 by the rotating mechanism 267 is continued at least until the film deposition step described later is completed.

[0058] (Film deposition steps: S3, S4, S5a, S6a, S5b, S6b) Subsequently, the film deposition steps are carried out by sequentially executing steps S3, S4, S5a, S6a, S5b, and S6b.

[0059] (Raw material gas supply step: S3, S4) In step S3, raw material gas is supplied to the wafer 200 in the processing chamber 201.

[0060] Valve 243a is opened to allow the raw material gas to flow into the gas supply pipe 232a. The raw material gas flow rate is regulated by the MFC 241a and supplied to the processing chamber 201 through the gas supply hole 250a via the nozzle 249a, and exhausted through the exhaust pipe 231. At this time, the raw material gas is supplied to the wafer 200. At the same time, valve 243c may be opened to allow inert gas to flow into the gas supply pipe 232c. The inert gas flow rate is regulated by the MFC 241c and supplied to the processing chamber 201 together with the raw material gas, and exhausted through the exhaust pipe 231.

[0061] Furthermore, to prevent raw material gas from entering the nozzle 249b, valve 243d may be opened to allow inert gas to flow into the gas supply pipe 232d. The inert gas is supplied into the processing chamber 201 via the gas supply pipe 232d and nozzle 249b, and exhausted from the exhaust pipe 231.

[0062] Examples of processing conditions in this step include: Processing temperature: room temperature (25°C) to 550°C, preferably 400 to 500°C; Processing pressure: 1 to 4000 Pa, preferably 100 to 1000 Pa; Raw material gas supply flow rate: 0.1 to 3 slm; Raw material gas supply time: 1 to 100 seconds, preferably 1 to 50 seconds; Inert gas supply flow rate (per gas supply pipe): 0 to 10 slm.

[0063] In this specification, numerical ranges such as "25 to 550°C" mean that the lower and upper limits are included within that range. For example, "25 to 550°C" means "25°C or more and 550°C or less." The same applies to other numerical ranges. In this specification, processing temperature refers to the temperature of the wafer 200 or the temperature inside the processing chamber 201, and processing pressure refers to the pressure inside the processing chamber 201. Also, gas supply flow rate: 0 slm means the case in which the gas is not supplied. These also apply in the following explanations.

[0064] Under the conditions described above, a first layer is formed on the wafer 200 (the underlying film on the surface) by supplying the raw material gas to the wafer 200. For example, when a silicon (Si)-containing gas, as described later, is used as the raw material gas, a Si-containing layer is formed as the first layer.

[0065] After the first layer is formed, valve 243a is closed to stop the supply of raw material gas into the processing chamber 201. At this time, APC valve 244 is left open, and the processing chamber 201 is evacuated using vacuum pump 246 to remove any unreacted raw material gas or reaction by-products that have contributed to the formation of the first layer remaining in the processing chamber 201 (S4). Valves 243c and 243d are also opened to supply inert gas into the processing chamber 201. The inert gas acts as a purge gas.

[0066] As the raw material gas, for example, tetrakis(dimethylamino)silane (Si[N(CH ３ ) ２ ４ , abbreviation: 4DMAS) gas, tris(dimethylamino)silane (Si[N(CH ３ ) ２ ３ H, abbreviation: 3DMAS) gas, bis(dimethylamino)silane (Si[N(CH ３ ) ２ ２ H ２ , abbreviation: BDMAS) gas, bisdi(ethylamino)silane (Si[N(C ２ H ５ ) ２ ２ H ２ , abbreviation: BDEAS) gas, bis(tertiary-butyl)aminosilane (SiH ２ [NH(C ４ H ９ )] ２ , abbreviation: BTBAS) gas, (diisopropylamino)silane (SiH ３ [N(C ３ H ７ ) ２ , abbreviation: DIPAS) gas, and other aminosilane-based gases can be used; one or more of these can be used as the raw material gas.

[0067] In addition, as the raw material, for example, monochlorosilane (SiH ３ Cl, abbreviation: MCS) gas, dichlorosilane (SiH ２ Cl ２ , abbreviation: DCS) gas, trichlorosilane (SiHCl ３ , abbreviation: TCS) gas, tetrachlorosilane (SiCl ４ , abbreviation: STC) gas, hexachlorodisilane (Si ２ Cl ６ , abbreviation: HCDS) gas, octachlorotrisilane (Si ３ Cl ８ , abbreviation: OCTS) gas and other chlorosilane-based gases, tetrafluorosilane (SiF ４ ) gas, difluorosilane (SiH ２ F ２ ​​​​Fluorosilane gases such as ) gas, and tetrabromosilane (SiBr ４ ) gas, dibromosilane (SiH ２ Br ２ Bromosilane-based gases such as ) gas, and tetraiodosilane (SiI ４ ) gas, diiodosilane (SiH ２ I ２ Iodosilane-based gases such as ) can also be used. In other words, halosilane-based gases can be used as raw material gases. One or more of these can be used as raw material gases.

[0068] In addition, as a raw material gas, for example, monosilane (SiH) ４ (Abbreviation: MS) gas, disilane (Si ２ H ６ (Abbreviation: DS) gas, trisilane (Si ３ H ８ Silicon hydride gases such as (abbreviated as TS) gas can be used. One or more of these can be used as the raw material gas.

[0069] Examples of inert gases include nitrogen (N ２ ) gases, as well as noble gases such as argon (Ar) gas, helium (He) gas, neon (Ne) gas, and xenon (Xe) gas, can be used. This also applies to each of the steps described later.

[0070] (Type 1 reaction gas supply step: S5a, S6a) After the film deposition process is completed, the plasma-excited Type 1 reaction gas is supplied to the wafer 200 in the processing chamber 201 (S5a).

[0071] In this step, the opening and closing of valves 243b to 243d is controlled using the same procedure as the opening and closing of valves 243a, 243c, and 243d in step S3. The flow rate of the first reaction gas is adjusted by the MFC 241b and supplied into the processing chamber 201 from the gas supply hole 250b via the nozzle 249b. At this time, high-frequency power (RF power) is supplied (applied) to the electrode 300 from the high-frequency power supply 320. The first reaction gas supplied into the processing chamber 201 is excited into a plasma state inside the processing chamber 201, supplied to the wafer 200 as an active species, and exhausted from the exhaust pipe 231. The switching between the first and second reaction gases is performed by a valve (not shown) located upstream of the gas supply pipe 232b. Furthermore, when supplying high-frequency power, before supplying the first type reaction gas, switches 337-1 to 337-3 are switched by control signals (R1 to R3) from the controller 121 so that the capacitances of the second capacitor 336-1, the third capacitor 336-2, and the fourth capacitor 336-3 are in the desired combination, thereby performing impedance matching. For example, when using impedance matching range A, switches 337-1, 337-1, and 337-3 are turned OFF, as shown in Figure 5A.

[0072] Examples of processing conditions in this step include: Processing temperature: Room temperature (25°C) to 550°C, preferably 400 to 500°C; Processing pressure: 1 to 300 Pa, preferably 10 to 100 Pa; First reaction gas supply flow rate: 0.1 to 10 slm; First reaction gas supply time: 1 to 100 seconds, preferably 1 to 50 seconds; Inert gas supply flow rate (per gas supply pipe): 0 to 10 slm; RF power: 50 to 500 W; RF frequency: 27 MHz to 27.25 MHz; Impedance matching range: A.

[0073] Under the conditions described above, by supplying a first type reaction gas to the wafer 200 in an excited plasma state, the first layer formed on the surface of the wafer 200 is modified by the action of ions generated in the plasma and electrically neutral active species, and the first layer is modified into a second layer.

[0074] When a nitriding gas (nitriding agent), such as a nitrogen (N) and hydrogen (H)-containing gas, is used as the first reaction gas, the N and H-containing gas is excited into a plasma state, generating N and H-containing active species, which are then supplied to the wafer 200. In this case, the N and H-containing active species act to perform a nitriding treatment as a modification treatment on the first layer formed on the surface of the wafer 200. In this case, if the first layer is, for example, a Si-containing layer, the Si-containing layer as the first layer is modified into a silicon nitride layer (SiN layer) as the second layer.

[0075] After the first layer has been modified into the second layer, valve 243b is closed to stop the supply of the first reaction gas. The supply of RF power to electrode 300 is also stopped. Then, using the same processing procedure and conditions as in step S4, the first reaction gas and reaction by-products remaining in the processing chamber 201 are removed from the processing chamber 201 (S6a).

[0076] As the first reaction gas, for example, an oxygen-containing gas or a gas containing nitrogen and hydrogen can be used. As an oxygen-containing gas, for example, oxygen (O) ２ ) gas, nitrous oxide (N ２ O) gas, nitric oxide (NO) gas, nitrogen dioxide (NO) ２ ) gas, ozone (O ３ ) gas, hydrogen peroxide (H ２ O ２ ) Gas, water vapor (H ２ O), ammonium hydroxide (NH ４ (OH) gas, carbon monoxide (CO) gas, carbon dioxide (CO) ２ Gases such as ) can be used. Examples of N and H-containing gases include ammonia (NH ３ ) gas, diazene (N ２ H ２ ) gas, hydrazine (N ２ H ４ ) Gas, N ３ H ８ Hydrogen nitride-based gases such as gases can be used. One or more of these can be used as the Type 1 reaction gas.

[0077] As the inert gas, for example, the various gases exemplified in step S4 can be used.

[0078] (Second type reaction gas supply step: S5b, S6b) After the film deposition process is completed, the plasma-excited second type reaction gas is supplied to the wafer 200 in the processing chamber 201 (S5b).

[0079] In this step, the opening and closing of valves 243b to 243d is controlled using the same procedure as the opening and closing of valves 243a, 243c, and 243d in step S3. The flow rate of the second reaction gas is adjusted by the MFC 241b and supplied into the processing chamber 201 from the gas supply hole 250b via the nozzle 249b. At this time, high-frequency power (RF power) is supplied (applied) to the electrode 300 from the high-frequency power supply 320. The second reaction gas supplied into the processing chamber 201 is excited into a plasma state inside the processing chamber 201, supplied to the wafer 200 as an active species, and exhausted from the exhaust pipe 231. Furthermore, when supplying high-frequency power, before supplying the first type reaction gas, switches 337-1 to 337-3 are switched by control signals (R1 to R3) from the controller 121 so that the capacitances of the second capacitor 336-1, the third capacitor 336-2, and the fourth capacitor 336-3 are in the desired combination, thereby performing impedance matching. For example, when using impedance matching range E, as shown in Figure 5A, switch 337-1 is turned ON, and switches 337-2 and 337-3 are turned OFF.

[0080] Examples of processing conditions in this step include: Processing temperature: room temperature (25°) to 550°C, preferably 400 to 500°C; Processing pressure: 1 to 300 Pa, preferably 10 to 100 Pa; Second reaction gas supply flow rate: 0.1 to 10 slm; Second reaction gas supply time: 1 to 100 seconds, preferably 1 to 50 seconds; Inert gas supply flow rate (per gas supply pipe): 0 to 10 slm; RF power: 50 to 500 W; RF frequency: 27 MHz to 27.25 MHz; Impedance matching range: E.

[0081] Under the conditions described above, by supplying a second type reaction gas to the wafer 200 in a plasma state, the first layer formed on the surface of the wafer 200 is modified by the action of ions generated in the plasma and electrically neutral active species, and the second layer is modified into a third layer.

[0082] When an oxidizing gas (oxidizing agent), such as an oxygen (O)-containing gas, is used as the second type of reaction gas, the O-containing gas is excited into a plasma state, generating O-containing active species, which are then supplied to the wafer 200. In this case, the O-containing active species cause an oxidation treatment as a modification treatment to be performed on the first layer formed on the surface of the wafer 200. In this case, if the first layer is, for example, a Si-containing layer, the Si-containing layer as the first layer is modified into a silicon oxide layer (SiO layer) as the second layer.

[0083] After the second layer has been modified into the third layer, valve 243b is closed to stop the supply of the second type reaction gas. The supply of RF power to electrode 300 is also stopped. Then, using the same processing procedure and conditions as in step S4, the remaining second type reaction gas and reaction by-products in the processing chamber 201 are removed from the processing chamber 201 (S6b).

[0084] As the second reaction gas, as mentioned above, for example, an oxygen-containing gas or a gas containing nitrogen and hydrogen can be used. For example, an oxygen-containing gas is (O ２ ) gas, nitrous oxide (N ２ O) gas, nitric oxide (NO) gas, nitrogen dioxide (NO) ２ ) gas, ozone (O ３ ) gas, hydrogen peroxide (H ２ O ２ ) Gas, water vapor (H ２ O), ammonium hydroxide (NH ４ (OH) gas, carbon monoxide (CO) gas, carbon dioxide (CO) ２ Gases such as ) can be used. Examples of N and H-containing gases include ammonia (NH ３ ) gas, diazene (N ２ H ２ ) gas, hydrazine (N ２ H ４) Gas, N ３ H ８ Hydrogen nitride-based gases such as gases can be used. One or more of these can be used as the Type 2 reaction gas.

[0085] As the inert gas, for example, the various gases exemplified in step S4 can be used.

[0086] (Performed a predetermined number of times: S7) Performing the above steps S3, S4, S5a, S6a, S5b, and S6b in this order non-simultaneously, that is, without synchronization, constitutes one cycle. By performing this cycle a predetermined number of times (n times, where n is an integer of 1 or more), that is, one or more times, a film of a predetermined composition and predetermined thickness can be formed on the wafer 200. It is preferable to repeat the above cycle multiple times. That is, it is preferable to make the thickness of the first layer formed per cycle smaller than the desired thickness, and to repeat the above cycle multiple times until the thickness of the film formed by stacking the second layer reaches the desired thickness. When, for example, a Si-containing layer is formed as the first layer and for example, an SiO layer is formed as the second layer, a silicon oxide film (SiO film) will be formed as the film. Also, when, for example, a Si-containing layer is formed as the first layer and for example, a SiN layer is formed as the second layer, a silicon nitride film (SiN film) will be formed as the film.

[0087] (Atmospheric pressure return step: S8) Once the above-described film formation process is complete, inert gas is supplied into the processing chamber 201 from gas supply pipes 232c and 232d, respectively, and exhausted from exhaust pipe 231. This purges the processing chamber 201 with inert gas, removing any remaining reaction gases from the processing chamber 201 (inert gas purging). Subsequently, the atmosphere inside the processing chamber 201 is replaced with inert gas (inert gas replacement), and the pressure inside the processing chamber 201 is returned to atmospheric pressure (atmospheric pressure return: S8).

[0088] (Removal step: S9) Subsequently, the seal cap 219 is lowered by the boat elevator 115, opening the lower end of the manifold 209, and the processed wafers 200, supported by the boat 217, are removed from the manifold 209 to the outside of the reaction tube 203 (boat unloading). After boat unloading, the shutter 219s is moved, and the lower end opening of the manifold 209 is sealed by the shutter 219s via the O-ring 220c (shutter close). After the processed wafers 200 have been removed from the outside of the reaction tube 203, they are taken out of the boat 217 (wafer discharge). After wafer discharge, the empty boat 217 may be brought into the processing chamber 201.

[0089] Here, it is preferable to control the furnace pressure during substrate processing within a range of 2 Pa or more and 300 Pa or less. This is because if the furnace pressure is lower than 2 Pa, the mean free path of the gas molecules becomes longer than the Debye length of the plasma, and the plasma that directly strikes the furnace wall becomes more pronounced, making it difficult to suppress particle generation. Also, if the furnace pressure is higher than 300 Pa, the plasma generation efficiency saturates, so even if reaction gas is supplied, the amount of plasma generated does not change, resulting in the wasteful consumption of reaction gas. At the same time, the mean free path of the gas molecules becomes shorter, which reduces the efficiency of transporting plasma active species to the wafer.

[0090] (3) Effects of this embodiment By using a matching device with multiple impedance matching ranges, impedance matching can be achieved in a short time for multiple load impedances of the plasma. As a result, substrate processing can be performed in a short time even when using multiple types of plasma.

[0091] The embodiments of this disclosure have been described in detail above. However, this disclosure is not limited to the embodiments described above, and can be modified in various ways without departing from its essence.

[0092] Furthermore, in the embodiments described above, for example, an example was described in which the reactants were supplied after the raw materials. This disclosure is not limited to such embodiments, and the supply order of the raw materials and reactants may be reversed. That is, the raw materials may be supplied after the reactants. By changing the supply order, it is possible to change the film quality and composition ratio of the formed film.

[0093] This disclosure is suitably applicable not only when forming SiO films, SiN films, or SiON films on a wafer 200, but also when forming Si-based insulating films such as silicon carbide films (SiOC films), silicon carbide carbonitride films (SiOCN films), and silicon carbonitride films (SiCN films) on a wafer 200.

[0094] For example, in addition to the gases mentioned above, or in addition to these gases, ammonia (NH ３ ) Nitrogen (N)-containing gases such as gases, propylene (C) ３ H ６ ) Carbon (C)-containing gases such as gases, boron trichloride (BCl ３ Using boron (B)-containing gases such as ) gas, for example, SiN films, SiON films, SiOCN films, SiOC films, SiCN films, SiBN films, SiBCN films, BCN films, etc., can be formed. The order in which each gas is flowed can be changed as appropriate. When forming these films, the same processing conditions as in the above-described embodiments can be used, and the same effects as in the above-described embodiments can be obtained. In these cases, the above-described reaction gases can be used as the oxidizing agent for the reaction gas.

[0095] Furthermore, in this disclosure, by replacing the first or second type of reaction gas with a noble gas or H2, it is possible to change the film quality without changing the constituent elements. For example, if the second type of reaction gas in the above embodiment is replaced with O ２ By changing from He to He, it is possible to form a film with higher etching resistance compared to a normal SiN film.

[0096] Furthermore, the present disclosure can also be suitably applied when forming a metal-based oxide film or a metal-based nitride film containing a metal element such as titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), aluminum (Al), molybdenum (Mo), or tungsten (W) on a wafer 200. That is, the present disclosure can also be suitably applied when forming, for example, a TiO film, a TiOC film, a TiOCN film, a TiON film, a TiN film, a TiSiN film, a TiBN film, a TiBCN film, a ZrO film, a ZrOC film, a ZrOCN film, a ZrON film, a ZrN film, a ZrSiN film, a ZrBN film, a ZrBCN film, a HfO film, a HfOC film, a HfOCN film, a HfON film, a HfN film, a HfSiN film, a HfBN film, a HfBCN film, a TaO film, a TaOC film, a TaOCN film, a TaON film, a TaN film, a TaSiN film, a TaBN film, a TaBCN film, a NbO film, a NbOC film, a NbOCN film, a NbON film, a NbN film, a NbSiN film, a NbBN film, a NbBCN film, an AlO film, an AlOC film, an AlOCN film, an AlON film, an AlN film, an AlSiN film, an AlBN film, an AlBCN film, a MoO film, a MoOC film, a MoOCN film, a MoON film, a MoN film, a MoSiN film, a MoBN film, a MoBCN film, a WO film, a WOC film, a WOCN film, a WON film, a WN film, a WSiN film, a WBN film, or a WBCN film on a wafer 200.

[0097] In these cases, for example, as a source gas, tetrakis(dimethylamino)titanium (Ti[N(CH ３ ) ２ ４ , abbreviation: TDMAT) gas, tetrakis(ethylmethylamino)hafnium (Hf[N(C ２ H ５ ) (CH ３ )] ４ , abbreviation: TEMAH) gas, tetrakis(ethylmethylamino)zirconium (Zr[N(C ２ H ５ ) (CH ３ )] ４ , abbreviation: TEMAZ) gas, trimethylaluminum (Al(CH ３ ) ３ , abbreviation: TMA) gas, titanium tetrachloride (TiCl ４) gas, hafnium tetrachloride (HfCl ４ ) Gas, etc. can be used.

[0098] In other words, this disclosure can be suitably applied when forming metalloid films containing metalloid elements or metallic films containing metallic elements. The processing procedures and conditions for these film formation processes can be the same as those for the film formation processes shown in the embodiments and modifications described above. In these cases as well, the same effects as those of the embodiments described above can be obtained.

[0099] It is preferable that the recipes used for the film deposition process be prepared individually according to the processing content and stored in the storage device 121c via an telecommunications line or external storage device 123. When starting various processes, it is preferable that the CPU 121a appropriately selects the appropriate recipe from among the multiple recipes stored in the storage device 121c according to the processing content. This makes it possible to form thin films of various film types, composition ratios, film quality, and film thickness in a general-purpose manner and with good reproducibility using a single substrate processing device. Furthermore, it is possible to reduce the burden on the operator and start various processes quickly while avoiding operational errors.

[0100] The above-mentioned recipes are not limited to newly created ones; they may also be prepared, for example, by modifying existing recipes already installed in the board processing device. When modifying a recipe, the modified recipe may be installed in the board processing device via a telecommunications line or a recording medium containing the recipe. Alternatively, existing recipes already installed in the board processing device may be directly modified by operating the input / output device 122 provided in the existing board processing device.

[0101] 121...Control unit (controller) 200...Substrate (wafer) 201...Processing chamber 300...Plasma generation unit 335...First capacitor 336...Second capacitor 337...First switching unit

Claims

1. A substrate processing apparatus comprising: a processing chamber for processing a substrate; a plasma generation unit to which high-frequency power is supplied from a high-frequency power supply and to generate plasma in the processing chamber; a matching unit comprising a first capacitor, a second capacitor, and a first switching unit connected to the second capacitor; and a control unit configured to switch the first switching unit according to the type of gas to be plasmaized by the plasma generation unit.

2. The substrate processing apparatus according to claim 1, wherein the matching unit changes the impedance matching range using the first switching unit.

3. The substrate processing apparatus according to claim 1, wherein the gas type comprises a first gas and a second gas, and the control unit controls the first switching unit to be OFF when the first gas is supplied to the processing chamber, and to be ON when the second gas is supplied to the processing chamber.

4. The substrate processing apparatus according to claim 1, wherein the first capacitor has a first capacitance and the second capacitor has a second capacitance different from the first capacitance.

5. The substrate processing apparatus according to claim 1, wherein the capacitance of the first capacitor is greater than that of the second capacitor.

6. The substrate processing apparatus according to claim 1, wherein the first switching unit and the second capacitor are connected in series.

7. The substrate processing apparatus according to claim 1, wherein the first capacitor and the second capacitor are connected in parallel.

8. The substrate processing apparatus according to claim 1, wherein the matching unit is provided between the high-frequency power supply and the plasma generation unit.

9. The substrate processing apparatus according to claim 1, wherein the matching unit comprises an input unit and an output unit, the input unit being connected to the high-frequency power supply, and the output unit being connected to an electrode provided in the plasma generation unit.

10. The substrate processing apparatus according to claim 1, further comprising a third capacitor and a second switching unit connected to the third capacitor in the matching unit.

11. The substrate processing apparatus according to claim 10, wherein the gas type comprises a first gas and a second gas, and the control unit controls the first switching unit to be OFF and the second switching unit to be ON or OFF when the first gas is supplied to the processing chamber, and the switching unit to be ON and the second switching unit to be ON or OFF when the second gas is supplied to the processing chamber.

12. The substrate processing apparatus according to claim 10, further comprising a fourth capacitor and a third switching unit connected to the fourth capacitor in the matching unit.

13. The substrate processing apparatus according to claim 12, wherein the gas type comprises a first gas and a second gas, and the control unit controls the first switching unit, the second switching unit, and the third switching unit to turn OFF when the first gas is supplied to the processing chamber, and to turn ON at least the third switching unit when the first gas is supplied to the processing chamber.

14. The substrate processing apparatus according to claim 13, wherein the impedance matching range group is switched by turning the third switching unit ON / OFF.

15. The substrate processing apparatus according to claim 12, wherein the capacitance of the fourth capacitor is greater than the capacitance of the first capacitor, the capacitance of the second capacitor, and the capacitance of the third capacitor.

16. The substrate processing apparatus according to claim 2, wherein the first gas and the second gas are reaction gases.

17. A matching circuit comprising: a first capacitor; a second capacitor; and a switching unit connected to the second capacitor; wherein the control unit is configured to switch the switching unit according to the type of gas to be plasma-generated by the plasma generation unit.

18. A substrate processing apparatus comprising: a step of loading a substrate into the processing chamber of a substrate processing apparatus having a processing chamber for processing a substrate; a step of processing the matching a matching unit having a first capacitor, a second capacitor, and a switching unit connected to the second capacitor; and a step of processing the substrate.

19. A method for manufacturing a semiconductor device, comprising: a step of loading a substrate into the processing chamber of a substrate processing apparatus, which has a processing chamber for processing a substrate; a plasma generation unit to which high-frequency power is supplied from a high-frequency power supply and which generates plasma in the processing chamber; a matching unit comprising a first capacitor, a second capacitor, and a switching unit connected to the second capacitor; and a control unit configured to switch the switching unit according to the type of gas to be plasmaized by the plasma generation unit; and a step of processing the substrate.

20. A program that causes a computer to cause the substrate processing apparatus to execute the following steps for a substrate processing apparatus, which has a processing chamber for processing a substrate, a plasma generation unit to which high-frequency power is supplied from a high-frequency power supply and which generates plasma in the processing chamber, a matching unit comprising a first capacitor, a second capacitor, and a switching unit connected to the second capacitor, and a control unit configured to switch the switching unit according to the type of gas to be plasmaized by the plasma generation unit: a procedure for loading the substrate into the processing chamber, and a procedure for processing the substrate.

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