Polishing method, polishing device, polishing system, imaging module, and imaging method

Abstract

A polishing method for polishing a lateral surface of a multilayer chip including a plurality of semiconductor chips that are stacked, the method comprising: an insertion step for inserting the multilayer chip into a through opening of a retainer ring; an attachment step for attaching the retainer ring and the multilayer chip to a polishing head in a state where the multilayer chip is inserted into the through opening; and a polishing step for polishing the lateral surface of the multilayer chip attached to the polishing head.

Description

Polishing method, polishing apparatus, polishing system, imaging module and imaging method

[0001] The present invention relates to a polishing method, a polishing apparatus, a polishing system, an imaging module, and an imaging method.

[0002] For improving functions or reducing power consumption, a stacked chip including a plurality of stacked semiconductor chips has been proposed (see Patent Document 1). In the manufacture of stacked chips, the side surfaces of the chip are polished by chemical mechanical polishing (CMP) or the like.

[0003] Patent Document 1 discloses that a memory cube in which a plurality of memory chips are stacked includes markers for adjusting the polishing amount of each memory chip during polishing and detecting the position between each memory chip.

[0004] International Publication No. 2024 / 135670

[0005] Polishing of a stacked chip can be performed by a polishing apparatus provided with a polishing head. In this case, polishing is performed by bringing the stacked chip attached to the polishing head so as to be surrounded by a retainer ring into contact with a polishing tool. It is desirable to propose a method or apparatus that enables polishing to obtain expected results more precisely, more efficiently, or more reliably. More specifically, it is desirable to facilitate attachment of the stacked chip and the retainer ring to the polishing head. It is desirable for the stacked chip to be transported more safely. It is desirable to polish a plurality of side surfaces of a stacked chip more quickly or efficiently. It is desirable to suppress adverse effects caused by contact between the stacked chip and the retainer ring during polishing. It is desirable to adjust the moment generated in the stacked chip during polishing to achieve more precise polishing. It is desirable that markers on the stacked chip indicating the polishing state can be detected more reliably or more efficiently.

[0006] The present invention has been made in view of the above-mentioned circumstances, and the present invention has been made to solve or alleviate at least part of the above-mentioned problems.

[0007] According to one embodiment of the present invention, a polishing method is a polishing method for polishing the side surface of a stacked chip including a plurality of stacked semiconductor chips, comprising: an insertion step of inserting the stacked chip into a through-opening of a retainer ring; an attachment step of attaching the retainer ring and the stacked chip to a polishing head while the stacked chip is inserted into the through-opening; and a polishing step of polishing the side surface of the stacked chip attached to the polishing head.

[0008] According to another embodiment of the present invention, the polishing apparatus is a polishing apparatus for polishing the sides of a stacked chip including a plurality of stacked semiconductor chips, comprising a polishing head for holding the stacked chip, a retainer ring, a transport device for transporting the stacked chip, and a control device, wherein the control device controls the transport device to insert the stacked chip into the through-opening of the retainer ring, controls the polishing head to attach the retainer ring and the stacked chip to the polishing head with the stacked chip inserted into the through-opening, and polishes the sides of the stacked chip attached to the polishing head.

[0009] According to another embodiment of the present invention, a polishing method is a polishing method for polishing the side surface of a stacked chip comprising a plurality of stacked semiconductor chips, comprising: a first wet polishing step of wet polishing a first side surface of the stacked chip; a rotation step, after the first wet polishing step, of rotating the stacked chip while it is wet, so that the stacked chip is positioned on a support so that it is supported via a second side surface different from the first side surface; and a second wet polishing step of wet polishing a second side surface of the stacked chip that is different from the first side surface.

[0010] According to another embodiment of the present invention, the polishing apparatus is a polishing apparatus for polishing the side surface of a stacked chip including a plurality of stacked semiconductor chips, comprising a polishing head for holding the stacked chip, a transport device for transporting the stacked chip, a posture changing device for rotating the stacked chip, and a control device, wherein the control device is configured to control the polishing head and perform a first wet polishing step of wet polishing the first side surface of the stacked chip, and after the first wet polishing step, while the stacked chip is wet, control the posture changing device to rotate the stacked chip, control the posture changing device or the transport device to position the stacked chip on a support so that it is supported via a second side surface different from the first side surface, and after the rotation, control the polishing head and perform a second wet polishing step of wet polishing the second side surface of the stacked chip, which is different from the first side surface.

[0011] According to another embodiment of the present invention, the polishing method is a polishing method for polishing the side surface of a stacked chip comprising a plurality of stacked semiconductor chips, wherein the side surface extends along the stacking direction of the stacked chips, and the method includes a first polishing step of bringing the polishing tool into contact with the side surface of the stacked chip and moving the polishing tool relative to the side surface along the side surface while supporting the stacked chip so that it faces a predetermined direction, and a second polishing step of polishing the side surface while rotating the stacked chip with respect to the polishing tool about an axis extending in a direction perpendicular to the side surface polished in the first polishing step.

[0012] According to another embodiment of the present invention, the polishing apparatus is a polishing apparatus for polishing the side surface of a stacked chip including a plurality of stacked semiconductor chips, comprising a polishing head for holding the stacked chip, a polishing tool support module for supporting a polishing tool, and a control device, wherein the side surface extends along the stacking direction of the stacked chip, and the control device is configured to perform a first polishing step in which the polishing tool is moved relative to the stacked chip along the side surface while controlling the polishing head and the polishing tool support module to bring the side surface of the stacked chip into contact with the polishing tool and supporting the stacked chip so that it faces a predetermined direction, and a second polishing step in which the polishing head and the polishing tool support module are controlled to polish the side surface while rotating the stacked chip relative to the polishing tool around an axis extending in a direction perpendicular to the side surface polished in the first polishing step.

[0013] According to another embodiment of the present invention, a polishing apparatus is for polishing the side surface of a stacked chip including a plurality of stacked semiconductor chips, comprising a retainer ring and a polishing head for holding the stacked chip and the retainer ring, wherein the retainer ring comprises a through-opening into which the stacked chip is inserted, an inner wall surface defining the through-opening and a supply port formed on the inner wall surface for supplying liquid to the through-opening.

[0014] According to another embodiment of the present invention, the polishing method is a polishing method for polishing the sides of a stacked chip, which includes a plurality of stacked semiconductor chips, using a polishing apparatus, wherein the polishing apparatus comprises a retainer ring and a polishing head for holding the stacked chip and the retainer ring, and includes supplying a liquid between the retainer ring and the stacked chip while polishing the sides.

[0015] According to another embodiment of the present invention, the polishing apparatus is for polishing the side surface of a stacked chip including a plurality of stacked semiconductor chips, and comprises a polishing head for holding the stacked chip and a control device for controlling the polishing head, wherein the polishing head comprises a chip mounting surface on which the stacked chip is attached, a head central axis extending perpendicular to the chip mounting surface, an actuator for applying force to the stacked chip and a moment measuring device for measuring the moment acting on the stacked chip, and the control device is configured to control the moment applied to the stacked chip by the actuator based on measurement data obtained by measurement by the moment measuring device.

[0016] According to another embodiment of the present invention, a polishing method is a polishing method for polishing the side surface of a stacked chip including a plurality of stacked semiconductor chips using a polishing apparatus, wherein the polishing apparatus comprises a polishing head for holding the stacked chip, the polishing head comprises an actuator for applying force to the stacked chip and a moment measuring device for measuring the moment acting on the stacked chip, and the method comprises controlling the moment applied to the stacked chip by the actuator based on measurement data obtained by measurement by the moment measuring device.

[0017] According to another embodiment of the present invention, the polishing apparatus is a polishing apparatus that polishes the side surface of a stacked chip, which includes a plurality of stacked semiconductor chips, by bringing the side surface of the stacked chip into contact with a polishing tool, and comprises a polishing head for holding the stacked chip, a polishing tool support module for supporting the polishing tool, and a control device, wherein the polishing tool is in the shape of a sheet, has a sheet width in a first sheet direction, and has at least one transparent portion formed continuously or intermittently along a second sheet direction perpendicular to the first sheet direction and the thickness direction of the polishing tool, the polishing tool support module is configured to move the polishing tool along the second sheet direction, and includes an imaging device capable of imaging the side surface while the side surface is in contact with the transparent portion during polishing.

[0018] According to another embodiment of the present invention, the polishing method is a polishing method in which a polishing device polishes the side surface of a stacked chip, which includes a plurality of stacked semiconductor chips, by bringing the side surface of the stacked chip into contact with a polishing tool, wherein the polishing device comprises a polishing head for holding the stacked chip and a polishing tool support module for supporting the polishing tool, the polishing tool is in the shape of a sheet, has a sheet width in a first sheet direction, and has at least one transparent portion formed continuously or intermittently along a second sheet direction perpendicular to the first sheet direction and the thickness direction of the polishing tool, the polishing tool support module is configured to move the polishing tool along the second sheet direction, and the method includes taking an image of the side surface while the polishing is being performed and the side surface is in contact with the transparent portion.

[0019] According to another embodiment of the present invention, the imaging module is for imaging the side surface of a stacked chip comprising a plurality of stacked semiconductor chips, and comprises a tank for holding a liquid and an imaging device, wherein the tank comprises a bottom surface defining a space in which the liquid is held, an inner surface connected to the bottom surface and surrounding the space, a window defining at least a portion of the bottom surface, and a positioning portion for positioning a retainer ring into which the stacked chip is inserted along the bottom surface such that the window and the side surface of the stacked chip overlap, and the imaging device is configured to be positioned on the side opposite to the space with respect to the window.

[0020] According to another embodiment of the present invention, the imaging method is an imaging method for imaging the side surface of a stacked chip including a plurality of stacked semiconductor chips, comprising arranging the stacked chip and retainer ring in a tank holding a liquid, wherein the tank comprises a bottom surface defining a space in which the liquid is held, an inner surface connected to the bottom wall and surrounding the space, a window defining at least a portion of the bottom surface, and a positioning portion along the bottom surface for positioning the retainer ring into which the stacked chip is inserted such that the window and the side surface of the stacked chip overlap, and imaging the side surface with an imaging device positioned on the opposite side of the space from the window.

[0021] This is a schematic diagram showing the overall configuration of the polishing apparatus according to the first embodiment. This is a schematic perspective view showing the configuration of the laminated chip according to the first embodiment. This is a schematic perspective view showing the configuration of the laminated chip according to the first embodiment. This is a schematic plan view showing the retainer ring according to the first embodiment. This is a schematic cross-sectional view showing the retainer ring according to the first embodiment. This is a schematic cross-sectional view showing the transport pallet according to the first embodiment. This is a schematic diagram showing the transport of the laminated chip from the transport pallet. This is a schematic cross-sectional view showing the retainer ring support base according to the first embodiment. This is a schematic cross-sectional view showing the retainer ring placed on the retainer ring support base. This is a schematic diagram showing the insertion of the laminated chip into the retainer ring. This is a schematic cross-sectional view showing the laminated chip placed on the retainer ring. This is a schematic diagram showing the orientation change module and the laminated chip. This is a schematic diagram showing the rotation of the laminated chip by the orientation change module. This is a schematic diagram showing the placement of the rotated laminated chip on the retainer ring support base. This is a schematic cross-sectional view showing the attachment of the laminated chip and retainer ring to the polishing head. This is a schematic cross-sectional view showing the polishing head that holds the laminated chip and retainer ring. This is a schematic diagram showing the 14-14 cross-section of the polishing head in Figure 13. This is a schematic plan view showing the polishing module according to the first embodiment. This is a schematic side view showing a polishing module according to the first embodiment. This is a schematic diagram for explaining the moment generated in the laminated chip during polishing. This is a schematic diagram for explaining the formation of a curved portion in the laminated chip. This is a schematic diagram for explaining the formation of a dome-like shape in the laminated chip. This is a schematic diagram for explaining the inclination of the surface to be polished. This is a schematic diagram for explaining the control of the shape of the surface to be polished. This is a schematic diagram showing the pressure of the laminated chip when moment control is not performed. This is a schematic diagram showing the pressure of the laminated chip when moment control is performed. This is a graph showing an example of the temporal change in the moment of the laminated chip when moment control is performed and when it is not performed during rotary polishing. This is a schematic diagram showing the pressure of the laminated chip when moment control is performed during rotary polishing. This is a graph showing an example of the temporal change in the moment of the laminated chip when moment control is performed and when it is not performed during rotary polishing.This is a schematic diagram illustrating the inclination of the surface to be polished in rotary polishing. This is a graph showing an example of the temporal change of moment in rotary polishing, with and without moment control to inclinate the surface to be polished. This is a schematic front view of a laminated chip showing a marker set. This is a partially enlarged cross-sectional view of a laminated chip showing the configuration of a marker set. This is a schematic cross-sectional view showing the 28-28 section of Figure 27. This is a schematic diagram illustrating an example of marker information. This is a schematic cross-sectional view showing an imaging module according to the first embodiment. This is a schematic cross-sectional view illustrating the arrangement of a retainer ring to the imaging module. This is a schematic cross-sectional view showing a laminated chip and retainer ring arranged in the imaging module. This is a flowchart showing the flow of the polishing method according to the first embodiment. This is a flowchart showing the flow of the polishing method according to the first embodiment. This is a flowchart showing the flow of the imaging method according to the first embodiment. This is a schematic diagram showing a polishing method according to Modification 1. This is a flowchart showing the flow of the polishing method according to Modification 1. This is a schematic cross-sectional view showing a polishing head and retainer ring according to Modification 2. This is a schematic cross-sectional view showing an example of the arrangement of the supply port in the retainer ring. This is a flowchart showing the flow of the polishing method according to Modification 2. This is a schematic diagram showing an imaging method according to Modification 3. This is a schematic diagram showing a posture change module according to Modification 4. This is a flowchart showing the flow of the polishing method according to Modification 4. This is a schematic diagram showing a posture change module according to Modification 5. This is a schematic diagram showing the rotation of the laminated chip in Modification 5. This is a schematic diagram showing the placement of the rotated laminated chip on the support. This is a schematic plan view showing a polishing apparatus according to the second embodiment. This is a schematic side view showing a polishing apparatus according to the second embodiment. This is a flowchart showing the flow of the polishing method according to the second embodiment.

[0022] Embodiments of the present invention will be described below with reference to the accompanying drawings. In the accompanying drawings, identical or similar elements are denoted by identical or similar reference numerals, and redundant descriptions of identical or similar elements may be omitted in the description of each embodiment. Furthermore, the features shown in each embodiment are applicable to other embodiments insofar as they do not contradict each other.

[0023] Figure 1 of the first embodiment is a schematic plan view showing the polishing apparatus 1000 of the first embodiment. The polishing apparatus 1000 is a device for polishing the sides of a laminated chip 70. The polishing apparatus 1000 includes a transport device 20 for transporting the laminated chip 70 from a transport pallet 10, a retainer ring support base 30, a chip holding device 4 including a polishing head 40, a posture changing module 50, an imaging module 60 including an imaging device 621, and a polishing tool support module 200. The polishing tool support module 200 includes a polishing platen 210. The chip holding device 4 and the polishing tool support module 200 constitute a polishing module 2. The polishing apparatus 1000 may also include a retainer ring 80. In this embodiment, the polishing apparatus 1000 is configured to polish the sides of the laminated chip 70 by bringing the laminated chip 70 into contact with a polishing tool 100 supported by the polishing tool support module 200, with the laminated chip 70 and retainer ring 80 attached to the polishing head 40. The polishing system 1100 comprises a polishing device 1000 and a polishing tool 100.

[0024] The polishing apparatus 1000 includes a control device 900 for controlling each part of the polishing apparatus 1000. The control device 900 includes at least one information processing device, such as a general-purpose computer or a dedicated computer. At least a portion of the data processed by the control device 900 may be stored on a remote server or the like. The control device 900 includes an arithmetic unit 910, a memory 920, and a storage device 930. The arithmetic unit 910 includes a processor such as a central processing unit (CPU). The storage device 930 includes a non-volatile storage medium such as a solid-state drive and can store programs for controlling the transport device 20, the polishing head 40, the attitude change module 50, the imaging module 60, and the polishing tool support module 200. These programs may be obtained from a recording medium such as a DVD-ROM or obtained via a network. The arithmetic unit 910 performs various processing by reading the programs stored in the storage device 930, etc., into the memory 920 and executing them. The physical configuration of the control device 900 is not particularly limited as long as control by the control device 900 is possible. For example, the control device 900 may be distributed among the polishing module 2 and the imaging module 60, etc.

[0025] Furthermore, the control of each part of the polishing apparatus 1000, such as the transport device 20, the attitude change module 50, or the imaging module 60, may be performed by a control device independent of the control device 900, and each part may be operated separately by the user. The polishing system 1100 may include a polishing module 2 as a polishing apparatus, and at least one of the transport device 20, retainer ring support base 30, attitude change module 50, and imaging module 60.

[0026] Figures 2 and 3 are schematic perspective views of the stacked chip 70 according to this embodiment. Figure 2 shows the front, top, and right-side view of the stacked chip 70. Figure 3 shows the back, bottom, and left-side view of the stacked chip 70. In this embodiment, each face of the stacked chip 70 is referred to as a side 7. The stacked chip 70 includes a plurality of stacked semiconductor chips 73. The plurality of semiconductor chips 73 are arranged in a stacking direction schematically shown by arrow DN. The stacking direction is the direction in which the stacked chip 70 extends due to the stacking of the plurality of semiconductor chips 73. The plurality of semiconductor chips 73 may be flat, and their thickness direction may coincide with the stacking direction. The stacked chip 70 preferably has a rectangular parallelepiped or cubic shape.

[0027] The type of semiconductor chip 73 is not particularly limited as long as it can be stacked. The semiconductor chip 73 may include a memory chip on which memory circuits are mounted or a logic chip on which logic circuits are mounted. Examples of memory chips that make up the semiconductor chip 73 include DRAM (Dynamic Random Access Memory), SRAM (Static Random Access Memory), MRAM (Magnetoresistive Random Access Memory), and NAND flash memory.

[0028] The stacked chip 70 may include adhesive layers 74 disposed between a plurality of semiconductor chips 73. The adhesive layers 74 bond adjacent semiconductor chips 73 together. In the illustrated example, the plurality of semiconductor chips 73 and the plurality of adhesive layers 74 are arranged alternately in the stacking direction. The adhesive layers 74 may extend along a plane perpendicular to the stacking direction. The adhesive layers 74 may also be flat layers formed between a plurality of flat semiconductor chips 73. The material included in the adhesive layers 74 is not particularly limited and may include known interlayer insulating materials, etc. The number of semiconductor chips 73 included in the stacked chip 70 is not particularly limited and can be 1 to 4 or 6 or more, in addition to the 5 in the illustrated example.

[0029] The stacked chip 70 of this embodiment comprises a chip surface 71 and a plurality of sides 7 including stacked sides 72. The stacked chip 70 comprises a pair of chip surfaces 71 and four stacked sides 72. The pair of chip surfaces 71 extend along a plane substantially perpendicular to the stacking direction and include chip surfaces 71A and 71B. Chip surfaces 71A and 71B may face each other in the stacking direction. In the illustrated example, chip surface 71A is located on the top surface of the stacked chip 70, and chip surface 71B is located on the bottom surface of the stacked chip 70.

[0030] The four stacking sides 72 extend along the stacking direction and include stacking sides 72A, 72B, 72C, and 72D. In the illustrated example, the four stacking sides 72 are arranged to surround the central axis AXC1 of the stacked chip 70, which extends in the stacking direction. A pair of stacking sides 72A and 72B extend substantially parallel to each other and face each other in a first chip direction perpendicular to the stacking direction. A pair of stacking sides 72C and 72D extend substantially parallel to each other and face each other in a second chip direction substantially perpendicular to the stacking direction and the first chip direction. In the illustrated example, stacking side 72A is located on the front of the stacked chip 70, stacking side 72B is located on the back of the stacked chip 70, stacking side 72C constitutes the left side 7 in a front view of the stacked chip 70, and stacking side 72D constitutes the right side in a front view of the stacked chip 70.

[0031] In this embodiment, it is preferable that at least one of the stacked side surfaces 72 extending along the stacking direction is polished. This reduces steps or distortions caused by stacking multiple semiconductor chips 73. Alternatively or in addition to polishing the stacked side surfaces 72, the chip surface 71 may also be polished.

[0032] Figure 4 is a schematic plan view showing the retainer ring 80 according to this embodiment. Figure 5 is a cross-sectional view (more precisely, an end view) of the retainer ring 80, showing the 5-5 cross-section in Figure 4. By positioning the retainer ring 80 around the laminated tip 70, the polishing tool 100 makes contact with the surface to be polished more horizontally. This suppresses the application of strong or oblique force to the corners of the laminated tip 70, and allows for adjustment of the amount of polishing of the laminated tip 70, particularly the amount of polishing of the edges of the surface to be polished.

[0033] The retainer ring 80 comprises a retainer ring body 81 and a through-opening 8 formed in the retainer ring body 81. The retainer ring 80 has a first retainer surface S10 on the side where the polishing head 40 (Figure 1) is placed, or on the side to which it is attached to the polishing head 40, and a second retainer surface S20 on the opposite side of the first retainer surface S10. In the illustrated example, the first retainer surface S10 and the second retainer surface S20 are formed substantially parallel to each other. The through-opening 8 penetrates from the first retainer surface S10 to the second retainer surface S20. A laminated chip 70 is inserted into the through-opening 8.

[0034] The retainer ring 80 includes an inner wall surface 83 that defines the through-opening 8. Preferably, the inner wall surface 83 extends in a direction substantially perpendicular to the first retainer surface S10 or the second retainer surface S20. The retainer ring 80 may also include a pair of first inner wall surfaces 831 facing each other in a first direction, and a pair of second inner wall surfaces 832 facing each other in a second direction substantially perpendicular to the first direction. In the illustrated example, the first inner wall surfaces 831A and 831B are planar and formed substantially parallel to each other. The second inner wall surfaces 832A and 832B are planar and formed substantially parallel to each other. With this configuration, when the side surface 7 of the laminated chip 70 is rectangular, the amount of polishing can be adjusted as described below.

[0035] The through-opening 8 preferably has a shape and dimensions corresponding to the shape of the laminated chip 70. This allows the retainer ring 80 to more reliably adjust the amount of polishing of the laminated chip 70. If the laminated chip 70 has a cubic or rectangular parallelepiped shape, the through-opening 8 preferably has a square or rectangular cross-section along the first retainer surface S10 or the second retainer surface S20. In other words, the retainer ring 80 preferably has a cylindrical inner wall surface 83 that is square or rectangular when viewed from above. The distance between a pair of opposing first inner wall surfaces 831 is preferably set so that a gap CL1 (Figure 10B) of a predetermined width is formed when the laminated chip 70 is inserted into the through-opening 8. This predetermined width is the distance between the laminated chip 70 and the first inner wall surfaces 831 that are facing each other across the gap CL1. If this predetermined width is too long, the adjustment of the amount of polishing by the retainer ring 80 will be suppressed. If this predetermined width is too short, it may become difficult to insert the laminated chip 70 into the retainer ring 80, or the laminated chip 70 and the retainer ring 80 may come into contact, potentially causing adverse effects such as damage to the laminated chip 70. From this perspective, the predetermined width is set appropriately. From a similar perspective, it is preferable that the distance between a pair of opposing second inner wall surfaces 832 is set such that a gap CL1 of a predetermined width is formed when the laminated chip 70 is inserted into the through-opening 8.

[0036] In this embodiment, the laminated chip 70 is configured to be inserted into the retainer ring 80 from the first retainer surface side. As shown in Figure 5, the inner wall surface 83 defining the through-opening 8 is chamfered on the first retainer surface side. In other words, the inner wall surface 83 has a chamfered portion 82 on the first retainer surface side. This makes it easier to insert the laminated chip 70 into the retainer ring 80. In the illustrated example, the portion of the inner wall surface 83 on the first retainer surface side of the first inner wall surface 831 and the second inner wall surface 832 is the chamfered portion 82. The central axis perpendicular to the second retainer surface S20 of the retainer ring 80 is defined as the central axis AXC2. The chamfered portion 82 is formed by the inner wall surface 83 extending along the central axis AXC2, which is inclined outward with respect to the central axis AXC2. The chamfered portion 82 can be an inclined surface inclined with respect to the central axis AXC2 and the first retainer surface S10. The shape of the chamfered portion 82 is not particularly limited as long as it facilitates insertion of the laminated chip 70 into the retainer ring 80, and may be a curved surface. If the chamfered portion 82 is positioned on the second retainer surface side, the gap CL1 (Figure 10B) widens, which can suppress the adjustment of the amount of polishing. Therefore, it is preferable that the chamfered portion 82 is formed only on the first retainer surface side.

[0037] If the retainer ring cannot be removed from the polishing head, forming a chamfer on the second surface to facilitate insertion of the laminated chip into the retainer ring makes it difficult to adjust the amount of polishing. In this embodiment, the retainer ring 80 is configured to be separable from the polishing head 40. This allows for the insertion of the laminated chip 70 into the retainer ring 80 by providing a chamfer 82 on the first surface so as not to affect the adjustment of the amount of polishing by the retainer ring 80. Furthermore, if the retainer ring 80 is separable from the polishing head 40, unwanted materials such as polishing debris can be removed more efficiently by washing the laminated chip 70 and the retainer ring 80 together in the process of washing the laminated chip 70. In addition, when the retainer ring 80 is separable from the polishing head 40, the polishing device 1000 or polishing system 1100 may be equipped with one or more spare retainer rings 80. In this case, the control device 900 can control a dimensional measuring device (not shown) to measure the dimensions of areas of the retainer ring 80 that are prone to wear after polishing. The control device 900 can manage the retainer rings 80 without stopping the polishing device 1000 by discarding retainer rings 80 that show significant wear based on thresholds stored in the storage device 930, etc.

[0038] As shown in Figures 4 and 5, the retainer ring 80 may include a first retainer-side positioning portion 85 for positioning the retainer ring 80 relative to the polishing head 40. Preferably, the first retainer-side positioning portion 85 is located on the first retainer surface side. The first retainer-side positioning portion 85 may be configured to engage with a head-side positioning portion 480 (Figure 12), which will be described later. The shape of the first retainer-side positioning portion 85 is not particularly limited, but it may have at least one of a convex portion, a concave portion, and a hole. In the illustrated example, the first retainer-side positioning portion 85 is a hole formed in the first retainer surface S10, and the convex portion of the head-side positioning portion 480 is inserted into it, restricting the retainer ring 80 from moving in a direction along the first retainer surface S10 relative to the polishing head 40. In the illustrated example, the retainer ring 80 has first retainer-side positioning portions 85A and 85B formed on both sides of the through-opening 8 in a direction along the first retainer surface S10. The number and position of the first retainer-side positioning portions 85 are not particularly limited as long as the retainer ring 80 can be positioned with the desired accuracy relative to the polishing head 40.

[0039] As shown in Figure 5, the retainer ring 80 may include a second retainer-side positioning portion 86 for positioning the retainer ring 80 relative to the retainer ring support base 30 (Figure 1). The second retainer-side positioning portion 86 may be configured to engage with a base-side positioning portion 32 (Figure 8), which will be described later. The shape of the second retainer-side positioning portion 86 is not particularly limited, but it may have at least one of a convex portion, a concave portion, and a hole. In the illustrated example, the second retainer-side positioning portion 86 is a hole formed in the second retainer surface S20, and the convex portion of the base-side positioning portion 32 is inserted into it, restricting the retainer ring 80 from moving in the direction along the second retainer surface S20 relative to the retainer ring support base 30. In the illustrated example, the retainer ring 80 has second retainer-side positioning portions 86A and 86B formed on both sides of the through-opening 8 in the direction along the second retainer surface S20. The number and position of the second retainer-side positioning parts 86 are not particularly limited as long as the retainer ring 80 can be positioned with the desired accuracy relative to the retainer ring support base 30.

[0040] As shown in Figure 5, the retainer ring 80 may include a third retainer-side positioning portion 87 for positioning the retainer ring 80 relative to the imaging module 60 (Figure 1). The third retainer-side positioning portion 87 may be configured to engage with a tank-side positioning portion 615 (Figure 31), which will be described later. The shape of the third retainer-side positioning portion 87 is not particularly limited, but it may have at least one of a convex portion, a concave portion, and a hole. In this embodiment, the second retainer-side positioning portion 86 and the third retainer-side positioning portion 87 are made up of the same part of the retainer ring 80. The number and position of the third retainer-side positioning portions 87 are not particularly limited as long as the retainer ring 80 can be positioned relative to the imaging module 60 with the desired accuracy.

[0041] As shown in Figure 5, in this embodiment, the first retainer-side positioning portion 85 and the second retainer-side positioning portion 86 or the third retainer-side positioning portion 87 are configured by through holes extending from the first retainer surface S10 to the second retainer surface S20. This reduces the effort required in the manufacturing process and allows for faster and more efficient manufacturing of the retainer ring 80.

[0042] Figure 6 is a schematic cross-sectional view showing a transport pallet 10. The structure of the transport pallet 10 is not particularly limited as long as it can transport the laminated chips 70, and known pallets can be used. In the illustrated example, the transport pallet 10 is flat and has a plurality of chip mounting sections 11 on one of the main surfaces facing each other in the thickness direction of the transport pallet 10. In the illustrated example, the chip mounting sections 11 are recesses formed on the main surfaces. The shape, number, and position of the chip mounting sections 11 are not particularly limited.

[0043] FIG. 7 is a conceptual diagram showing conveyance of the laminated chip 70 from the conveyance pallet 10. The conveyance device 20 conveys the laminated chip 70 under the control of the control device 900. The conveyance device 20 conveys the laminated chip 70 from the conveyance pallet 10 to the retainer ring support base 30. The conveyance device 20 includes a conveyance holding unit 21 and a conveyance arm 22. The conveyance holding unit 21 includes a mechanism for holding the laminated chip 70 such as a suction hand, and holds the laminated chip 70 while conveying the laminated chip 70. When the conveyance holding unit 21 is a suction hand, the conveyance device 20 includes a flow path (not shown) extending from the suction hand through the conveyance arm 22 to a suction device such as a pump. The suction hand sucks a surface of the laminated chip 70 opposite to a surface in contact with the chip mounting unit 11, and can hold the laminated chip 70. In the illustrated example, since the chip mounting unit 11 is a recess, the conveyance holding unit 21 is driven by a motor or the like (not shown) and configured to be movable in the vertical direction. The conveyance arm 22 is driven by a motor or the like (not shown) and configured to be movable in the horizontal direction or the like, and moves the conveyance holding unit 21 as necessary for conveying the laminated chip 70.

[0044] FIG. 8 is a schematic cross-sectional view showing the retainer ring support base 30. FIG. 9 is a schematic cross-sectional view showing the retainer ring support base 30 and a retainer ring 80 disposed on the retainer ring support base 30. The retainer ring support base 30 includes a support base main body 31 and a base-side positioning unit 32. The support base main body 31 includes a retainer ring support surface 33 that supports the retainer ring 80. As shown in FIG. 9, the retainer ring support surface 33 can contact and support a second retainer surface S20 of the retainer ring 80. The base-side positioning unit 32 can be configured to engage with a second retainer-side positioning unit 86. Although the shape of the base-side positioning unit 32 is not particularly limited, it can have at least one of a protrusion, a recess, and a hole. In the illustrated example, a pair of base-side positioning units 32A and 32B each have a protrusion, and the protrusions are configured to fit into respective holes of a pair of second retainer-side positioning units 86A and 86B.

[0045] The retainer ring support base 30 may be equipped with a positioning imaging device 35. In this case, the support base body 31 is equipped with a support base window 34 that defines the retainer ring support surface 33, and the positioning imaging device 35 may image the conveyed laminated chip 70 through the support base window 34. This allows the laminated chip 70 to be positioned more accurately relative to the retainer ring 80, and the amount of polishing by the retainer ring 80 to be adjusted more uniformly. For example, based on the imaging data obtained by imaging by the positioning imaging device 35, the control device 900 can control the conveying device 20 to shift or rotate the position of the laminated chip 70 horizontally so that the width of the gap between the inner wall surface 83 of the retainer ring 80 and the laminated chip 70 becomes more uniform. The type of positioning imaging device 35 is not particularly limited as long as it can image the laminated chip 70, but it could be, for example, a camera capable of photoelectric conversion of visible light. In the following figures, such as the support base window 34 in Figure 8, hatching of parts corresponding to windows is omitted.

[0046] Figure 10A is a conceptual diagram showing the insertion step in the polishing method according to this embodiment. In the insertion step, the laminated chip 70 is inserted into the through-opening 8 of the retainer ring 80. In this embodiment, the control device 900 can control the transport device 20 to perform the insertion step. In this embodiment, the laminated chip 70 is inserted into the through-opening 8 such that the surface to be polished 700 of the laminated chip 70 faces the retainer ring support surface 33, or the surface to be polished 700 is the vertically lower surface of the laminated chip 70. As described above, it is preferable that the laminated chip 70 is inserted into the through-opening 8 from the first retainer surface side where the chamfered portion 82 is formed in the retainer ring 80. From the viewpoint of adjusting the amount of polishing, the gap CL1 between the retainer ring 80 and the laminated chip 70 can be smaller than that of a typical robot hand, so it is preferable that the transport device 20 suctions and transports the surface of the laminated chip 70 opposite to the surface to be polished 700.

[0047] The laminated chip 70 is inserted into the through opening 8 of the retainer ring 80, and the positioning imaging device 35 can image the laminated chip 70 and the retainer ring 80 until the laminated chip 70 contacts the retainer ring support surface 33. A signal obtained by imaging with the positioning imaging device 35 is subjected to analog-to-digital conversion (A / D conversion) in the positioning imaging device 35 or the control device 900 or the like, to generate positioning imaging data. For example, in the positioning imaging data, the position of each pixel of the positioning imaging device 35 corresponds to the intensity of light received by each pixel. The control device 900 can cause an image of the laminated chip 70 based on the positioning imaging data to be displayed on a display device (not shown) or the like. The control device 900 calculates the position of the laminated chip 70 relative to the retainer ring 80 from the positioning imaging data. For example, based on the positioning imaging data, the control device 900 calculates the distance of each gap CL1 between the four inner wall surfaces 831A, 831B, 832A, and 832B (FIG. 4) of the retainer ring 80 and the laminated chip 70. The control device 900 can control the movement of the conveying arm 22 of the conveying device 20 such that the calculated distances between each gap CL1 and the laminated chip 70 approach uniformity.

[0048] FIG. 10B is a schematic cross-sectional view showing the retainer ring 80 with the laminated chip 70 inserted therein. The laminated chip 70 and the retainer ring 80 are positioned on the retainer ring support surface 33 with a gap CL1 provided between the side surface 7 of the laminated chip 70 and the inner wall surface 83 of the retainer ring 80. At this time, the surface to be polished 700 of the laminated chip 70 can be contact-supported by the retainer ring support surface 33. Note that the retainer ring support base 30 does not need to include the support base window 34 or the positioning imaging device 35 as long as polishing can be performed with desired accuracy.

[0049] If it is necessary to rotate the laminated chip 70 so that different faces of the laminated chip 70 face vertically downward before inserting it into the retainer ring 80, the transport device 20 may transport the laminated chip 70 to the orientation change module 50 before insertion into the retainer ring 80. In this case, after the laminated chip 70 has been rotated in the orientation change module 50 so that different faces face vertically downward, the transport device 20 or another device capable of transporting the laminated chip 70 may transport the laminated chip 70 to the retainer ring support base 30.

[0050] In the following embodiment, "changing the orientation" of the laminated chip 70 means rotating the laminated chip 70 from a state where one surface is facing vertically downwards to a state where a different surface is facing vertically downwards, in order to insert the laminated chip 70 into the retainer ring 80 to polish a desired surface 700.

[0051] Figure 11A is a schematic diagram showing the posture change module 50 in this embodiment. Figure 11B is a schematic diagram showing the rotation of the laminated chip 70 by the posture change module 50. Figure 11C is a schematic diagram showing the insertion of the rotated laminated chip 70 into the retainer ring 80. The posture change module 50 includes a posture change device 51. The posture change device 51 includes a rotating holding part 510 capable of holding the laminated chip 70 while rotating it, and a motor 511 that drives the rotation of the rotating holding part 510. In the illustrated example, each of the pair of rotating holding parts 510 is driven by the motor 511. The pair of rotating holding parts 510 may be a pair of robot hands, etc., and can hold two opposing faces of the laminated chip 70. The posture change device 51 can hold the laminated chip 70 with its first side surface 701 facing vertically downward by contacting it from the horizontal direction with the pair of rotating holding parts 510. The rotating holding part 510 may also be a suction hand that suction and holds one or more faces of the laminated chip 70.

[0052] When rotating the laminated chip 70 on the transport pallet 10 so that the surface to be polished 700 is vertically downward, or when rotating the laminated chip 70 after polishing one side 7 of the laminated chip 70 so that a different side 7 is vertically downward, the following rotation steps may be performed. As shown in Figure 11A, the laminated chip 70 is transported to the orientation change module 50 while being held by the transport device 20. Then, as shown in Figure 11B, the transport device 20 is removed from the laminated chip 70, and the laminated chip 70 is held by the rotation holding unit 510. In the illustrated example, the pair of rotation holding units 510 hold the laminated chip 70 by gripping opposite side 7s, which are different from the first side 701 and the second side 702 to be polished next, from both sides. Then, while holding the laminated chip 70, the rotation holding unit 510 rotates the laminated chip 70 so that the second side 702 is vertically downward. As shown in Figure 11C, the transport device 20 then contacts the rotated laminated chip 70, the transport device 20 holds the laminated chip 70, and the rotating holding part 510 separates from the laminated chip 70. Subsequently, the transport device 20 inserts the laminated chip 70 into the through-opening 8 of the retainer ring 80 as described above, with the second side surface 702, which is the surface to be polished 700, facing vertically downwards. The inserted laminated chip 70 is then placed on the retainer ring support base 30.

[0053] Figure 12 is a schematic cross-sectional view showing a laminated chip 70 and a retainer ring 80 attached to a polishing head 40. The polishing head 40 is configured to hold the laminated chip 70 and the retainer ring 80. The polishing head 40 performs an attachment process in which the retainer ring 80 and the laminated chip 70 are attached to the polishing head 40 with the laminated chip 70 inserted into the through-opening 8 of the retainer ring 80. In this embodiment, the laminated chip 70 and the retainer ring 80 are configured to be held to the polishing head 40 by suction. The control device 900 moves the polishing head 40 so that the mounting surface 48 of the polishing head 40 comes into contact with the surface of the laminated chip 70 opposite to the surface to be polished 700 and the first retainer surface S10 of the retainer ring 80. The control device 900 controls a suction device or valve (not shown) to draw in the first suction channel 412 (Figure 13) and the second suction channel 472 for the suction of the laminated chip 70, causing the laminated chip 70 and the retainer ring 80 to adhere to the mounting surface 48. Subsequently, the control device 900 controls the polishing head 40 to move it away from the retainer ring support base 30 and to the polishing tool support module 200. The polishing device 1000 or polishing system 1100 may be equipped with one or more temporary stands on which the retainer ring 80 and the laminated chip 70 can be placed. After the retainer ring 80 and the laminated chip 70 are transported from the retainer ring support base 30 to the temporary stands by a transport device, the retainer ring 80 and the laminated chip 70 placed on the temporary stands may be attached to the polishing head 40 and transported.

[0054] As shown in Figure 12, the polishing head 40 preferably includes a head-side positioning portion 480 for positioning the retainer ring 80 relative to the polishing head 40. The shape of the head-side positioning portion 480 is not particularly limited, but it may have at least one of a protrusion, a recess, and a hole. In the illustrated example, a pair of head-side positioning portions 480A and 480B each have a protrusion that protrudes from the mounting surface 48, and these protrusions are configured to engage with the holes of the first retainer-side positioning portions 85A and 85B, respectively.

[0055] In the polishing method of this embodiment, the retainer ring 80 and the laminated chip 70 are attached to the polishing head 40 with the laminated chip 70 inserted into the through-opening 8. This makes it easier to transport and attach the laminated chip 70, which is generally small and difficult to handle, to the polishing head 40. In addition, the retainer ring 80 can protect the laminated chip 70 during transport.

[0056] Figure 13 is a schematic cross-sectional view showing the polishing head 40. Figure 13 also shows the laminated tip 70 and retainer ring 80 attached to the polishing head 40 when polishing is being performed, as well as the polishing tool 100. Figure 13 corresponds to a longitudinal cross-sectional view of the polishing head 40 including the head central axis AX extending perpendicularly to the tip mounting surface 481, which will be described later.

[0057] The polishing head 40 comprises a tip mounting assembly 440, a pressing actuator 450, a polishing amount measuring sensor 460, and a polishing head housing 470. The tip mounting assembly 440 comprises a tip mounting member 410, a moment measuring device 420, and a pressed member 430.

[0058] In this embodiment, the chip mounting assembly 440 is configured to rotate integrally with the laminated chip 70, and is configured to apply force to the laminated chip 70 or to measure the tilt or moment of the laminated chip 70 via the chip mounting assembly 440. The chip mounting assembly 440 is connected to the polishing head housing 470, etc., while being configured to be movable or rotatable to the extent required during polishing.

[0059] The tip mounting member 410 includes a tip mounting surface 481 to which the laminated tip 70 is attached, and a first suction hole 411 formed in the tip mounting surface 481. The polishing head 40 includes a first suction channel 412 that fluidly communicates the first suction hole 411 with a suction device such as a pump (not shown). In the illustrated example, the first suction channel 412 is configured to be fluidly connected to the suction device by passing through the inside of the tip mounting member 410 and the polishing head housing 470. The form of the tip mounting member 410 is not particularly limited as long as it can hold the laminated tip 70 by suction and transmit force and moment, and may include plungers or the like.

[0060] As shown in Figure 13, the moment measuring device 420 may be positioned on the side of the chip mounting member 410 opposite to the side where the chip mounting surface 481 is located. The chip mounting member 410 may have an overhang portion 413 that is wider along the chip mounting surface 481 than the chip mounting surface 481 itself. By setting the detection position 461 of the polishing amount measuring sensor 460 on the overhang portion 413, the inclination of the chip mounting member 410, i.e., the laminated chip 70, can be measured more precisely.

[0061] The moment measuring device 420 is a device for measuring the moment acting on the laminated chip 70. The moment measuring device 420 may include a force sensor or the like. The chip mounting assembly 440 is configured so that the force applied to the laminated chip 70 is transmitted to the moment measuring device 420. In this embodiment, the force due to the pressing of the pressing actuator 450 acts on the moment measuring device 420 via the pressed member 430 in a direction along the head central axis AX, and the force with which the polishing tool 100 pushes the laminated chip 70 acts on the moment measuring device 420 via the chip mounting member 410 in a direction along the head central axis AX. In addition, the force acting on the laminated chip 70 in a direction along the polished surface 700, such as frictional force generated by the movement of the polishing tool 100 along the polished surface 700, acts on the moment measuring device 420 as a moment via the chip mounting member 410. The signal obtained by the moment measuring device 420 is A / D converted by the moment measuring device 420 or the control device 900, etc., and stored as measurement data in the storage device 930, etc. Hereinafter, the data indicating the moment acting on the stacked chip 70 obtained by the moment measuring device 420 will be referred to as moment measurement data. The moment measuring device 420 may be a load cell attached to the air cylinder that constitutes the pressing actuator 450. From the viewpoint of more reliably measuring the moment acting on the stacked chip 70, the moment measuring device 420 may include a force sensor and at least one of a plurality of load cells.

[0062] The pressed member 430 is a member that is directly pressed by the pressing actuator 450 and has a pressing position 431 which is the position where each pressing actuator 450 contacts and presses. The pressed member 430 transmits the force from the pressing actuator 450 to the moment measuring device 420. In the illustrated example, the pressed member 430 is a flat plate extending along a plane parallel to the chip mounting surface 481, has a pressing position 431 on one surface in the thickness direction, and is in contact with the moment measuring device 420 on the other surface. The pressed member 430 is not particularly limited as long as it has sufficient strength to transmit the force from the pressing actuator 450. The pressed member 430 may be a plunger.

[0063] Figure 14 is a schematic cross-sectional view showing a cross-section of the polishing head 40 perpendicular to the head central axis AX. Figure 14 corresponds to the 14-14 cross-section in Figure 13. The pressing actuator 450 is an actuator for applying force to the laminated chip 70. In this embodiment, from the viewpoint of facilitating moment control, the pressing actuator 450 is configured to apply force to the laminated chip 70 via a moment measuring device 420 and a chip mounting member 410. In the illustrated example, the polishing head 40 comprises four pressing actuators 450 arranged circumferentially at 90-degree intervals around the head central axis AX. Thus, it is preferable for the polishing head 40 to comprise three or more pressing actuators 450, and more preferably for three or more pressing actuators 450 configured to press different pressing positions 431 on the pressed member 430. This makes it possible to apply a moment to the laminated chip 70 about an axis in any direction parallel to the chip mounting surface 481. From a similar viewpoint, three or more pressing actuators 450 may be configured to press different pressing positions 431 in the circumferential direction with respect to the head central axis AX on the side of the pressed member 430 opposite to the side where the laminated chip 70 is located. From the viewpoint of a simple configuration, it is preferable that the pressing positions 431 are arranged concentrically, in other words, aligned in the circumferential direction. The number and position of the pressing actuators 450 are not particularly limited as long as the force and moment applied to the laminated chip 70 can be controlled with the desired precision.

[0064] From the viewpoint of precise control, the pressing actuator 450 is preferably a linear actuator equipped with a linear motion element 451 that moves in a straight line. As a linear motion actuator, the pressing actuator 450 may include an air cylinder such as an air bearing cylinder. The pressing actuator 450 is not particularly limited as long as it can control the force and moment applied to the laminated chip 70 with the desired precision, and may also be an electric actuator such as a piezo actuator. Three or more pressing actuators 450 may be arranged at different positions in the circumferential direction around the head central axis AX, preferably aligned in the circumferential direction, and each pressing actuator 450 may be configured to move along the head central axis AX. With such a configuration, a moment about an axis in any direction parallel to the chip mounting surface 481 can be applied to the laminated chip 70 with greater precision.

[0065] In the following, the axial and radial directions are defined with respect to the head central axis AX. In other words, the axial and radial directions are defined as the axial and radial directions of a rotating coordinate system with the head central axis AX as the axis. Shortening the first distance D1 from the pressing position 431 to the laminated chip 70, in other words, to the chip mounting surface 481, reduces the moment generated by the force acting on the laminated chip 70 in the direction along the polished surface 700, making more precise control easier. The second radial distance D2 from the pressing position 431 to the head central axis AX is also preferably shortened from the same viewpoint. The ratio of the second distance D2 from the pressing position 431 to the head central axis AX to the first axial distance D1 from the pressing position 431 to the laminated chip 70 can be 1 or less.

[0066] The polishing amount measuring sensor 460 is a sensor for measuring the amount of polishing on the stacked chip 70. The polishing amount measuring sensor 460 is preferably a displacement sensor. In this case, the polishing head 40 is preferably equipped with multiple polishing amount measuring sensors 460, and more preferably with three or more polishing amount measuring sensors 460. This allows for more accurate measurement of the polishing amount and measurement of the tilt of the stacked chip 70. The displacement sensor constituting the polishing amount measuring sensor 460 may be a contact sensor or a non-contact sensor. The polishing amount measuring sensor 460 may also include a tilt sensor.

[0067] It is preferable that the polishing amount measurement sensor 460 is located radially outward from the pressing position 431. This allows for more precise measurement of the tilt of the laminated chip 70. Depending on the accuracy of the pressing actuator 450, it may be possible to control the moment more precisely if the pressing actuator 450 is located radially inward. In such cases, it is easier to position the pressing actuator 450 in a location that allows for more precise control. From a similar viewpoint, if the polishing amount measurement sensor 460 is a displacement sensor, each of the multiple polishing amount measurement sensors 460 may be configured to detect the displacement of the chip mounting member 410 at a detection position 461 (Figure 13) located radially outward from the pressing position 431.

[0068] In the example shown in Figure 14, the polishing head 40 is equipped with four polishing amount measuring sensors 460 positioned at different circumferential positions with respect to the head central axis AX, and the four polishing amount measuring sensors 460 are arranged circumferentially at 90-degree intervals. The number and position of the polishing amount measuring sensors 460 are not particularly limited as long as they can measure the amount of polishing or the inclination of the laminated chip 70 with the desired accuracy.

[0069] The polishing head housing 470 is a housing that accommodates the various parts of the polishing head 40. As shown in Figure 13, the polishing head housing 470 may include side walls 477 and a bottom wall 478. A through hole 479 is formed in the bottom wall 478, and at least a part of the tip mounting member 410 can be positioned within the through hole 479. In this embodiment, the polishing head housing 470 has cylindrical side walls 477 and a disc-shaped or annular bottom wall 478, but is not limited thereto.

[0070] In this embodiment, the bottom surface of the polishing head housing 470, in other words, the outer surface in the thickness direction of the bottom wall 478, constitutes the retainer ring mounting surface 482. A second suction hole 471 is formed in the retainer ring mounting surface 482, and the polishing head 40 is equipped with a second suction channel 472 that fluidly communicates the second suction hole 471 with a suction device such as a pump (not shown). The control device 900 can control each suction device or valve to suction both the first suction channel 412 and the second suction channel 472. In this state, the control device 900 can suction and hold both the laminated chip 70 and the retainer ring 80 by bringing the chip mounting surface 481 into contact with the laminated chip 70 and the retainer ring mounting surface 482 into contact with the retainer ring 80. With the laminated chip 70 and the retainer ring 80 held by suction, the laminated chip 70 and the retainer ring 80 can be transported and the laminated chip 70 can be polished.

[0071] Furthermore, the retainer ring mounting surface 482 may have an opening 473 for adjusting the force of the retainer ring 80 against the polishing tool 100 by the pressure of the fluid. The polishing head 40 may have a pressure channel 474 that fluidly communicates the opening 473 with a fluid source and a pressure regulator (not shown). When the laminated chip 70 is being polished, the control device 900 can control the pressure regulator and the like to increase the pressure in the opening 473 and adjust the force with which the retainer ring 80 presses against the polishing tool 100. This allows for more precise control of the amount of polishing by the retainer ring 80.

[0072] Figure 15 is a schematic plan view showing a polishing module 2 according to this embodiment. The polishing module 2 comprises a chip holding device 4 and a polishing tool support module 200. The polishing module 2 performs a polishing process in which it polishes the side surface 7 of a laminated chip 70 attached to a polishing head 40. The polishing module 2 polishes the laminated chip 70 by bringing the laminated chip 70 held by the polishing head 40 into contact with a polishing tool 100 supported by the polishing tool support module 200. During polishing, the surface on the polishing tool 100 that the laminated chip 70 contacts is called the polishing surface 110.

[0073] As shown in Figure 15, the chip holding device 4 may include the polishing head 40, the polishing arm 41, and the arm drive device 42. The polishing arm 41 is configured to hold and move the polishing head 40. The configuration of the polishing arm 41 is not particularly limited as long as it can transport the polishing head 40, and may be configured to rotate or extend / retract. The arm drive device 42 includes a motor (not shown) and controls the rotation or extension / retraction of the polishing arm 41. As shown in Figure 1, it is preferable that the control device 900 controls the arm drive device 42 so that the polishing head 40 can move to the retainer ring support base 30 and the imaging module 60. However, the stacked chip 70 may be transported to the orientation change module 50 or the imaging module 60 using a transport device other than the chip holding device 4. In this embodiment, the control device 900 controls the polishing head 40 so that the stacked chip 70 is inserted into the through-opening 8 of the retainer ring 80 and the stacked chip 70 can be attached to the polishing head 40. Subsequently, the control device 900 may be configured to polish the side surface 7 of the laminated chip 70 attached to the polishing head 40. This facilitates handling of the laminated chip 70 during transport and attachment to the polishing head 40, and the retainer ring 80 protects the laminated chip 70 during transport.

[0074] As shown in Figure 15, the polishing tool support module 200 includes a polishing platen 210 that supports the polishing tool 100, a feed motor 221, a supply roller 222, a feed-side roller 223, a winding motor 231, a winding roller 232, a winding-side roller 233, and a liquid supply device 240. The polishing tool support module 200 is configured to support the polishing tool 100 while polishing is being performed and to adjust the polishing conditions as appropriate.

[0075] The polishing tool 100 is configured to contact the polishing surface 700 of the laminated chip 70 during polishing. Polishing is performed by the polishing tool 100 moving relative to the polishing surface 700 while in contact with it. The polishing tool 100 is not particularly limited as long as it is capable of polishing the laminated chip 70. The polishing tool 100 may contain abrasive materials such as abrasive grains. In this embodiment, the polishing tool 100 is a polishing film, which is prepared wound on the supply roller 222 and is configured to be fed from the supply roller 222 in the feeding direction schematically shown by arrow A200 during polishing. However, the configuration of the polishing tool 100 and the polishing tool support module 200 is not particularly limited as long as desired control can be performed on the polishing head 40. For example, the polishing tool 100 may be a polishing pad, and slurry may be supplied to the polishing pad fed from the supply roller 222, and polishing may be performed by bringing the laminated chip 70 and the polishing pad into contact in the presence of the slurry. In this way, abrasive materials such as abrasive grains may be supplied free in a liquid. Alternatively, the polishing tool 100 may be a lapping plate, and polishing may be performed by bringing the laminated chip 70 into contact with the rotating lapping plate. Another example is that the polishing tool 100 may be a grinding wheel, and polishing may be performed by bringing the laminated chip 70 into contact with the grinding wheel.

[0076] Figure 16 is a schematic side view showing the polishing head 40 and the polishing tool support module 200. The polishing platen 210 is configured to contact and support the polishing tool 100 during polishing. The material of the polishing platen 210 is not particularly limited as long as it has sufficient strength to support the polishing tool 100. The feed motor 221 drives the rotation of the supply roller 222. The supply roller 222 has the polishing tool 100 wound around a rotating shaft (not shown), and is configured to feed out the polishing tool 100 by rotating around the rotating shaft driven by the feed motor 221. The feed-side roller 223 is a roller for setting the polishing surface 110 to a desired height or for making the polishing surface 110 more horizontal. For example, the polishing tool 100 fed out from the feed-side roller 223 is positioned at approximately the same height as the platen surface 212 on which the polishing tool 100 is placed on the polishing platen 210.

[0077] The winding motor 231 drives the rotation of the winding roller 232. The winding roller 232 has a rotating shaft (not shown) and is configured to wind up the polishing tool 100 by rotating around this shaft driven by the winding motor 231. The winding-side roller 233 is a roller for setting the polishing surface 110 to a desired height or for making the polishing surface 110 more horizontal. For example, the polishing tool 100 moving from the polishing platen 210 toward the winding-side roller 233 is positioned at approximately the same height as the platen surface 212 on which the polishing tool 100 is placed on the polishing platen 210. The liquid supply device 240 is configured to supply a liquid (not shown), such as pure water or slurry, onto the polishing surface 110. The configuration of the liquid supply device 240 is not particularly limited.

[0078] The control device 900 can control the rotation and movement of the polishing head 40 along the polishing surface 110 when the laminated chip 70 and the polishing tool 100 are in contact. The polishing head 40 may be configured to move along a circular, arc-shaped, or curved trajectory along the polishing surface, as shown by the arrow A100 on the polishing surface in Figure 15. Alternatively, the polishing head 40 may be configured to move back and forth along a straight trajectory along the polishing surface 110. The polishing head 40 may be configured to move along any trajectory along the polishing surface by appropriately combining the above movements. The polishing head 40 may perform polishing while keeping the laminated chip 70 stationary at any position on the polishing surface. While the polishing head 40 is moving or stationary as described above, the polishing head 40 may be configured to rotate the laminated chip 70 around the head rotation axis AXR. The head rotation axis AXR may be an axis extending along a direction perpendicular to the chip mounting surface 481 or the retainer ring mounting surface 482, and may coincide with the head central axis AX. The chip holding device 4 can be driven to rotate around the head rotation axis AXR by a rotation mechanism such as a motor (not shown) located on the polishing arm 41, etc.

[0079] The control device 900 can control the rotation of the polishing tool support module 200 around an axis substantially perpendicular to the polishing surface 110 when the laminated chip 70 and the polishing tool 100 are in contact. The polishing tool support module 200 may be mounted on a rotating body (not shown) whose rotation is driven by a drive device (not shown). This allows the polishing platen 210 and the polishing tool 100 to rotate together. When the polishing head 40 is rotating or moving along an arbitrary trajectory along the polishing surface as described above, the polishing tool support module 200 may be stationary. Alternatively, when the polishing head 40 is rotating, stationary, or moving along an arbitrary trajectory along the polishing surface as described above, the polishing tool support module 200 may be configured to rotate around an axis substantially perpendicular to the polishing surface 110, or to oscillate by repeatedly rotating and rotating in the opposite direction.

[0080] As an example, the control device 900 may rotate the polishing head 40 around the head rotation axis AXR while rotating the polishing tool support module 200 around an axis substantially perpendicular to the polishing surface 110. Alternatively, the control device 900 may move the laminated chip 70 along the polishing tool in a circular orbit while the polishing tool support module 200 is fixed. As another example, the control device 900 may move the laminated chip 70 along the polishing tool 100 in a circular orbit while rotating the polishing head 40 around the head rotation axis AXR while the polishing tool support module 200 is fixed.

[0081] In the polishing process of this embodiment, the control device 900 controls the polishing head 40 and the like to polish the laminated side surface 72 (Figure 2) of the laminated chip 70 that extends in the stacking direction. When polishing the laminated side surface 72 by linearly moving the polishing tool 100 relative to the laminated chip 70 along the polishing surface 110, the direction of relative movement may be at any angle with respect to the stacking direction of the laminated chip 70. The control device 900 may move the polishing tool 100 relative to the laminated chip 70 along the stacking direction, or in a direction perpendicular to the stacking direction, or in a direction oblique to the stacking direction.

[0082] The following describes an example of polishing control by the control device 900, specifically the control of the moment acting on the laminated chip 70. Based on the moment measurement data obtained by the moment measuring device 420, the control device 900 controls the moment applied to the laminated chip 70 by the pressing actuator 450. This allows for more precise polishing of the laminated chip 70, and in particular, the inclination of the polished surface 700 or the amount of polishing at the edges of the polished surface can be adjusted.

[0083] Figure 17 is a conceptual diagram showing the forces and moments acting on the laminated chip 70 during polishing. In the example of Figure 17, it is assumed that the polishing tool 100 moves relative to the laminated chip 70 from right to left in the figure during polishing. This relative movement is schematically shown by arrow V1 in Figure 17 and subsequent figures. At this time, a load L10 is applied to the laminated chip 70 in a direction approximately perpendicular to the polishing surface 700 due to the pressing of the pressing actuator 450. In addition, due to the contact between the polishing surface 110 of the polishing tool 100 and the polishing surface 700 of the laminated chip 70, and the relative movement of the polishing tool 100 relative to the laminated chip 70, a frictional force F1 acts on the laminated chip 70 in the same direction as the relative movement. This frictional force F1 generates a moment M1 that rotates the laminated chip 70. Hereafter, moment refers to the moment around an axis perpendicular to the direction of the relative movement along the polishing surface 700 when the polishing tool 100 is moving relative to the laminated chip 70.

[0084] Figure 18 is a schematic diagram showing an example of the change in shape of the laminated chip 70 due to a moment M1 acting on the laminated chip 70 during polishing. Hereinafter, on the polished surface 700, the side opposite to the direction in which the polishing tool 100 moves relative to the laminated chip 70 (arrow V1) (right side in the figure) is referred to as the front side, and the side on the polished surface 700 that is in the same direction as the relative movement (left side in the figure) is referred to as the back side. Due to moment M1, the force pushing on the polished surface 110 is stronger on the front side of the polished surface 700 than on the back side of the polished surface 700. Therefore, the normal force that pushes back the laminated chip 70 from the polished surface 110, which is the reaction force to the force pushing on the polished surface 110, is also stronger on the front side of the polished surface 700 than on the back side. For this reason, the amount of polishing tends to be greater on the front side of the laminated chip 70 than on the back side. In Figure 18, this can result in the formation of a curved surface on the polished surface side and front side of the laminated chip 70. When the laminated chip 70 is polished without rotating around the head rotation axis AXR, the polished surface side and front side of the laminated chip 70 may form a curved surface that constitutes part of a cylinder. Hereafter, such a curved surface will be referred to as the curved portion 77 of the laminated chip 70. For clarity, the following figures schematically illustrate changes in shape, such as the inclination of the laminated chip 70 during polishing, on a larger scale.

[0085] Figure 19 is a schematic diagram showing another example of the change in shape of the laminated chip 70 due to a moment M1 acting on the laminated chip 70 during polishing. In the example of Figure 19, the laminated chip 70 was polished while rotating around the head rotation axis AXR, so that a curved portion 77 was formed continuously in the circumferential direction with respect to the head rotation axis AXR, and a dome-like shape 78 was formed.

[0086] Figure 20 is a schematic diagram showing a further example of the change in shape of the laminated chip 70 due to the moment M1 acting on the laminated chip 70 during polishing. In the example of Figure 20, when the laminated chip 70 is polished without rotating around the head rotation axis AXR, an inclined surface 79 is formed, which is the polished surface 700, that is inclined compared to the shape of the laminated chip 70 before polishing (dashed line), due to reasons such as small fluctuations in moment M1.

[0087] The formation of the curved portion 77, dome-shaped portion 78, or inclined surface 79 in the laminated chip 70 as described above may prevent the desired polishing from being performed. Therefore, it is desirable to control the orientation of the laminated chip 70, as well as the force and moment M1 acting on the laminated chip 70.

[0088] Figure 21 is a conceptual diagram showing an example of controlling the amount of polishing in a laminated chip 70. In this example, after an inclined surface 79A is formed by polishing, the polishing head 40 is rotated 180 degrees around the head rotation axis AXR to perform polishing. As a result, while suppressing the increase in the amount of polishing on the inclined surface 79A, an inclined surface 79B is formed on the opposite side of the inclined surface 79A on the polished surface 700, thereby reducing the unevenness of the polishing amount. In this way, the control device 900 can adjust the amount of polishing on the polished surface 700 by rotating the polishing head 40 around the head rotation axis AXR. In particular, the amount of polishing at the edges of the polished surface 700 can be adjusted to suppress the formation of curved portions 77, dome-shaped shapes 78, and inclined surfaces 79, and to prevent significant unevenness in the polishing amount.

[0089] Figures 22A and 22B are conceptual diagrams showing the control of the moment M1 acting on the laminated chip 70 using multiple pressing actuators 450. Figure 22A is a conceptual diagram showing the laminated chip 70 when the pressing force of the pressing actuators 450 is not adjusted, and Figure 22B is a conceptual diagram showing the laminated chip 70 when the adjustment is made. In Figures 22A and 22B, the pressure P1 when the laminated chip 70 presses the polishing tool 100 at each position on the polishing surface 700 is indicated by a downward arrow. In Figures 22A, 22B, and 22C, it is assumed that the polishing tool 100 moves relative to the laminated chip 70 in one direction, the polishing head 40 does not rotate around the head rotation axis AXR, and the orientation of the laminated chip 70 is controlled not to change.

[0090] As shown in Figure 22A, when multiple pressing actuators 450 press the member to be pressed 430 (Figures 13, 14) with the same force, the load L10 acts evenly on the front and back sides of the laminated chip 70. If the moment M1 is not controlled, as described above, a moment M1 acts on the laminated chip 70 due to the frictional force F1, and the laminated chip 70 presses the polishing tool 100 with a stronger pressure P1 on the front side of the polished surface 700. Therefore, due to the normal force on the polished surface 700 which is the reaction force to the pressure P1, the amount of polishing on the front side of the polished surface 700 increases, and a curved portion 77 may be formed.

[0091] In this embodiment, the control device 900 can control at least some of the multiple pressing actuators 450 to press with different forces from each other so that the moment M1 is reduced or eliminated. The control device 900 can perform this control based on moment measurement data obtained from the moment measuring device 420. For example, the control device 900 refers to the second distance D2 (Figure 13) between the head center axis AX and the pressing position 431, which is stored in the storage device 930 or the like. The control device 900 calculates the force that the pressing actuator 450 applies or the numerical value required to drive the pressing, based on the moment calculated from the second distance D2 and the force of the pressing actuator 450 pressing the pressing position 431, so that the moment M1 of the laminated chip 70 in the moment measurement data is canceled out.

[0092] In the example shown in Figure 22B, this control mechanism causes the rearmost pressing actuator 450 to press the member to be pressed 430 with greater force than the frontmost pressing actuator 450. In this case, the front load L11 on the laminated chip 70 is smaller than the rear load L12. At each position on the polished surface 700, the laminated chip 70 can press the polishing tool 100 with a more uniform pressure P1, and at this time, the moment M1 is reduced or becomes zero.

[0093] Figure 22C is a graph showing the time variation of moment M1 during polishing in the examples shown in Figures 22A and 22B. The moment on the vertical axis of the graph is the component of the moment M1 acting on the laminated chip 70 around an axis that extends perpendicular to the direction of relative movement of the polishing tool 100 with respect to the laminated chip 70 along the polishing surface 700. The horizontal axis represents any given time during polishing. Plot PL1 is a plot shown in Figure 22A when moment M1 is not controlled. Plot PL2 is a plot shown in Figure 22B when moment M1 is controlled.

[0094] As shown in Figure 22C, in plot PL1, since the moment M1 is not controlled, a significant moment M1 is continuously generated during polishing, and a non-zero average value MAV of moment M1 is observed. On the other hand, in plot PL2, the moment M1 generated in the laminated chip 70 is reduced compared to plot PL1 due to the control of moment M1. In this way, the control device 900 controls multiple pressing actuators 450 and applies different forces to the front and back sides of the laminated chip 70, thereby controlling the moment M1 generated in the laminated chip 70 and adjusting the amount of polishing, especially the amount of polishing of the edges of the polished surface 700.

[0095] Figures 23A and 23B are conceptual diagrams showing the control of the moment M1 acting on the laminated chip 70 using multiple pressure actuators 450 when the polishing head 40 rotates around the head rotation axis AXR. Hereinafter, polishing performed while rotating the polishing head 40 around the head rotation axis AXR will be referred to as rotary polishing. Figure 23A is a conceptual diagram showing the laminated chip 70 when the pressure of the pressure actuators 450 is not adjusted in rotary polishing, and Figure 23B is a conceptual diagram showing the laminated chip 70 when the adjustment is made. In Figures 23A and 23B, the pressure P1 when the laminated chip 70 presses the polishing tool 100 at each position on the polished surface 700 is indicated by a downward arrow.

[0096] As shown in Figure 23A, in rotary polishing, when multiple pressing actuators 450 press the workpiece 430 (Figures 13 and 14) with the same force, the load L10 acts evenly on the front and back sides of the laminated chip 70. If the moment M1 is not controlled, a moment M1 acts on the laminated chip 70 due to the frictional force F1, and the portion of the laminated chip 70 on the front side of the workpiece 700 presses the polishing tool 100 with a stronger pressure P1 during rotation. Therefore, the amount of polishing on the front side increases due to the normal force on the workpiece 700, which is the reaction force to the pressure P1. In this system fixed to the laminated chip 70, the direction of the moment M1 changes with the rotation of the polishing head 40. As a result, the amount of polishing at the edges of the workpiece 700 increases around the entire circumference of the head rotation axis AXR, and a dome-like shape 78 may be formed.

[0097] In this case, the control device 900 can periodically change the pressing force of the pressing actuators 450 to control the moment M1 acting on the laminated chip 70. For example, the control device 900 can preferably change the pressing force of each pressing actuator 450 sinusoidally, with the same period as the rotation period of the polishing head 40. In addition, the control device 900 can shift the phase of pressing by each pressing actuator 450 to adjust the phase in order to reduce or cancel out the moment M1. The control device 900 can calculate the amplitude and phase of the oscillating moment M1 from the moment measurement data and set the amplitude and phase of the pressing force of the pressing actuators that change periodically based on the amplitude and phase. In the following, "sine-like" does not particularly limit the phase.

[0098] In the example shown in Figure 23B, this control ensures that at each point in the rotation of the polishing head 40, the pressing actuators 450 located at the rear of the plurality of pressing actuators 450 press the member to be polished 430 with greater force than the pressing actuators 450 located at the front. In this case, the front load L11 on the laminated chip 70 becomes smaller than the rear load L12. Regardless of the rotation phase of the polishing head 40, in other words, the orientation of the laminated chip 70, the laminated chip 70 can press the polishing tool 100 with a more uniform pressure P1 at each position on the polished surface 700, and at this time, the moment M1 is reduced or becomes zero.

[0099] Figure 23C is a graph showing the time variation of moment M1 during polishing in the examples shown in Figures 23A and 23B. The moment M1 on the vertical axis of the graph is the component of the moment measured by the moment measuring device 420, which rotates integrally with the laminated chip 70, around an axis extending in one direction along the polished surface 700. The horizontal axis represents any time during polishing. Plot PL1 is a plot when moment M1 is not controlled, as shown in Figure 23A. Plot PL2 is a plot when moment M1 is controlled, as shown in Figure 23B.

[0100] As shown in Figure 23C, in plot PL1, since the moment M1 is not controlled, the moment changes sinusoidally in synchronization with the change in orientation of the laminated chip 70 due to rotation, and a non-zero amplitude MA of moment M1 is observed. On the other hand, in plot PL2, the amplitude of moment M1 generated in the laminated chip 70 is reduced compared to plot PL1 due to the control of moment M1. In this way, the control device 900 can control multiple pressing actuators 450 in rotary polishing and periodically change the pressing force by shifting the phase of each pressing actuator 450 so that different forces are applied to the front and back sides of the laminated chip 70. This makes it possible to control the moment M1 generated in the laminated chip 70 even in rotary polishing and adjust the amount of polishing, especially the amount of polishing of the edges of the polished surface 700.

[0101] In the above example, an example of reducing or canceling the moment M1 generated in the laminated chip 70 was described. However, the moment M1 generated in the laminated chip 70 may be controlled so that a laminated chip 70 having an arbitrary shape, such as a desired curved portion 77, a dome-shaped shape 78, or an inclined surface 79, can be obtained by polishing.

[0102] Figure 24 is a conceptual diagram showing another example of controlling the moment M1 acting on the laminated chip 70 using multiple pressing actuators 450 in rotary polishing. In Figure 24, the pressure P1 when the laminated chip 70 pushes the polishing tool 100 at each position on the polishing surface 700 is indicated by downward arrows. In this example, in rotary polishing, the control is performed to reduce the fluctuation of the moment M1 due to rotation, while generating a non-zero moment M1 on the laminated chip 70. The control device 900 periodically varies the force of each pressing actuator 450 by shifting their phases relative to each other to reduce the fluctuation of the moment M1 due to rotation. In addition, when the pressing actuator 450 is positioned on the front side, it applies a greater force than when it is positioned on the rear side. This makes it possible to form a desired inclined surface 79, etc., on the laminated chip 70.

[0103] Figure 25 is a graph showing the time change of moment M1 during polishing in the example shown in Figure 24. The moment on the vertical axis of the graph is the component of the moment measured by the moment measuring device 420, which rotates integrally with the laminated chip 70, around an axis extending in one direction along the polished surface 700. The horizontal axis represents any time during polishing. Plot PL1 is a plot when moment M1 is not controlled during rotary polishing. Plot PL2 is a plot when moment M1 is controlled, as shown in Figure 24.

[0104] In plot PL2, similar to plot PL2 in Figure 23C, the periodic fluctuation of moment M1 is reduced. In addition, in plot PL2, the moment value is offset by the average value MAV. Therefore, the amount of polishing on the front side of the laminated chip 70 is higher than on the back side, and an inclined surface 79 or curved portion 77 can be formed. In this way, the control device 900 can not only reduce the moment M1 generated on the laminated chip 70, but can also control it to maintain or increase it, thereby allowing for more flexible polishing of the laminated chip 70. For example, the corners of the laminated chip 70 can be rounded to make it less prone to chipping.

[0105] In the polishing method of this embodiment, the laminated chip 70 is equipped with a marker, and based on information obtained by imaging the marker, it is possible to determine whether or not to continue polishing, or to change the polishing conditions.

[0106] Figure 26 is a schematic front view showing the stacked side surface 72 of the stacked chip 70. The stacked chip 70 comprises at least one marker set 750. The marker set 750 is arranged within an adhesive layer 74 formed between a plurality of semiconductor chips 73. In the illustrated example, four marker sets 750 are arranged in each of the four adhesive layers 74, for a total of 16 marker sets 750. The number of marker sets 750 is not particularly limited and can be any number of one or more. The position of the marker sets 750 is also not particularly limited; for example, they may be arranged in areas of high importance at a higher density than in other areas. Furthermore, the same or different number of marker sets 750 can be arranged on other different side surfaces 7 of the stacked chip 70.

[0107] Figure 27 is a schematic cross-sectional view of a laminated chip 70 showing a marker set 750, and corresponds to a partial cross-sectional view of the area indicated by arrow B in the 27-27 cross-section of Figure 26. In Figure 27, the lower end of the laminated chip 70 in the figure is the surface to be polished 700. The direction perpendicular to the surface to be polished 700 is called the polishing direction (up and down direction in the figure). The marker set 750 comprises a plurality of markers 740, and the plurality of markers 740 may include a first marker 741 and a second marker 742. The number of first markers 741 and second markers 742 included in the marker set 750 is not particularly limited. A single marker 740 may be placed instead of the marker set 750.

[0108] The first marker 741 is formed to be longer than the second marker 742 in the polishing direction. In the illustrated example, a pair of first markers 741A and 741B are positioned on both sides of the second marker 742 in a direction perpendicular to the polishing direction. The first marker 741 can indicate, for example, that an acceptable amount of polishing has been performed. That is, if both the pair of first markers 741A and 741B are exposed on the surface to be polished 700, it can be determined that an acceptable amount of polishing has been performed at the location of the marker set 750. When the pair of first markers 741A and 741B are exposed in all marker sets 750, polishing can be terminated.

[0109] The second marker 742 may be a marker 740 that indicates the amount of polishing more precisely than the first marker 741. In the illustrated example, the marker set 750 includes a plurality of second markers 742 positioned at different locations in the polishing direction and in a direction perpendicular to the polishing direction. This allows for more precise information on the amount of polishing than that obtained by the first marker 741, based on the position of the second markers 742 exposed on the polished surface 700.

[0110] Figure 28 is a cross-sectional view of the 28-28 section of Figure 27, schematically showing the polished surface 700 when polishing has been performed up to the 28-28 section. In this case, the exposure of the pair of first markers 741A and 741B indicates that an acceptable amount of polishing has been performed at the position of this marker set 750. In addition, the position of the exposed second marker 742 provides more precise information on the amount of polishing.

[0111] When the control device 900 acquires the amount of polishing based on the marker 740, the following processing may be performed. The control device 900 acquires imaging data obtained from imaging in the imaging module 60 (Figure 1). The signal obtained from imaging by the imaging device 621 is A / D converted in the imaging device 621 or the control device 900, etc., and imaging data is generated. For example, in the imaging data, the position of each pixel of the imaging device 621 corresponds to the intensity of the light received by each pixel. The control device 900 can acquire the above signal or imaging data by communication, etc. The control device 900 can display an image of the stacked chip 70 based on the imaging data on a display device (not shown), etc. The control device 900 analyzes the imaging data and detects the features of the first marker 741 and the second marker 742 by image processing, and determines whether the first marker 741 and the second marker 742 are exposed on the surface to be polished 700. When the second marker 742 is detected, the control device 900 derives the position of the second marker 742 in the polishing direction. The control device 900 stores information regarding whether the first marker 741 has been detected and the position of the second marker 742 as marker information in the storage device 930 or the like. Alternatively or additionally, the control device 900 may include information on the amount of polishing in the polishing of the stacked chip 70, obtained by detecting the first marker 741 or the second marker 742, as part of the marker information. Thus, the polishing method of this embodiment may also include obtaining marker information regarding whether the marker 740 is exposed on the polished surface 700, based on imaging data obtained by imaging the polished surface 700. This makes it possible to more accurately determine whether to end polishing or change the polishing conditions by using the markers. Alternatively, the user may detect the marker 740 by looking at an image of the polished surface 700 and input the marker information or the polishing amount data described later to the control device 900.

[0112] Figure 29 is a conceptual diagram illustrating the polishing amount data in the polishing method of this embodiment. The control device 900 can generate and acquire polishing amount data indicating the amount of polishing of the surface to be polished 700 based on imaging data or marker information obtained by imaging the marker 740. For example, in the polishing amount data, the position on the surface to be polished 700 is associated with the amount of polishing. In the illustrated example, the point that the position of each marker set 750 is associated with the amount of polishing in the polishing amount data is schematically shown. Each numerical value indicates the amount of polishing at that position based on marker information from the marker set 750 located at the center of the circle surrounding the numerical value. This polishing amount is expressed as an integer from 1 to 10 depending on which of the second markers 742 shown in Figure 27 is detected, with a higher numerical value indicating a smaller amount of polishing. A hyphen in the circle indicates that marker 740 was not detected in the marker set 750 at that position. This polishing amount data can be represented by a two-dimensional array or the like. In the example shown in Figure 29, the amount of polishing increases from the upper left to the lower right of the laminated side surface 72A in the figure, indicating that the polished surface 700 is inclined. Note that the method of representing the polishing amount data is not particularly limited, as long as it indicates the amount of polishing.

[0113] The control device 900 can determine whether or not to continue polishing based on marker information or polishing amount data. For example, if there are undetected first markers 741, polishing may be continued. Polishing may be terminated when all first markers 741 of the stacked chip 70 are detected. Polishing may also be terminated when all first markers 741 are detected and a predetermined second marker 742 is also detected. The same applies if the polishing amount indicated by the polishing amount data is within the range of polishing amounts corresponding to the state of these markers 740. Alternatively, the control device 900 can change the polishing conditions based on marker information or polishing amount data. For example, if only some of the first markers 741 are undetected, the pressing of the pressing actuator 450 may be controlled to increase the polishing rate at the locations where the undetected first markers 741 are located.

[0114] The polishing apparatus 1000 may include a cleaning apparatus (not shown). The cleaning apparatus may include a cleaning tank for containing a cleaning solution, and may be configured so that the laminated chips 70 and retainer rings 80 held by the polishing head 40 or other transport device are immersed in the cleaning solution. The configuration of the cleaning apparatus is not particularly limited. Cleaning the surface to be polished 700 can reduce the adverse effects on imaging caused by polishing debris, etc. Imaging of the surface to be polished 700 may be performed multiple times when polishing the surface to be polished 700. Polishing, cleaning, and imaging of the surface to be polished 700 in the polishing module 2 may be performed in this order and repeated. In this case, when polishing is performed again after imaging of the surface to be polished 700, the polishing conditions can be changed based on marker information or polishing amount data. The polishing head 40 may also be cleaned by the cleaning apparatus.

[0115] Figure 30 is a schematic cross-sectional view showing the imaging module 60 according to this embodiment. The imaging module 60 is a module for imaging the side surface 7 of the stacked chip 70. The imaging module 60 comprises a tank 61 for holding liquid and an imaging device 621.

[0116] The type of imaging device 621 is not particularly limited as long as it can distinguish and image the markers 740 exposed on the polished surface 700. Preferably, the imaging device 621 is a camera capable of converting visible light into photoelectric energy. Furthermore, from the viewpoint of magnifying and imaging the markers 740 with high resolution, preferably, the imaging device 621 is an imaging microscope.

[0117] The tank 61 comprises a bottom surface 611 defining a space SP1 in which liquid is held, an inner surface 612 connected to the bottom surface 611 and surrounding the space SP1, a bottom wall 613, and a window 614. The window 614 is formed in the bottom wall 613 that defines the bottom surface 611 of the tank 61. The window 614 defines at least a portion of the bottom surface 611. In the illustrated example, the bottom wall 613 extends substantially horizontally, and the inner surface 612 extends vertically upward from the bottom surface 611. The bottom surface 611 may be a support surface for supporting the laminated chip 70 and the retainer ring 80. The tank 61 is configured such that an imaging device 621 can be positioned on the side of the window 614 opposite to the space SP1, and the polishing surface 700 of the laminated chip 70 placed inside the tank 61 can be imaged through the window 614. Since the tank 61 is equipped with a window 614 that defines the bottom surface 611, imaging can be easily performed from the vertically downward side. Therefore, without changing the orientation of the laminated chip 70 after polishing, the laminated chip 70 and retainer ring 80 can be transported to the tank 61 while being held by the polishing head 40, and the polished surface 700 can be imaged.

[0118] The tank 61 may include a tank-side positioning portion 615 for positioning the retainer ring 80. The tank-side positioning portion 615 may be configured to engage with a third retainer-side positioning portion 87. The shape of the tank-side positioning portion 615 is not particularly limited, but it may have at least one of a protrusion and a recess that engage with the retainer ring 80. In the illustrated example, the pair of tank-side positioning portions 615A and 615B each have a protrusion, which fits into the holes of the pair of third retainer-side positioning portions 87.

[0119] In this embodiment, the tank-side positioning unit 615 positions the retainer ring 80 into which the laminated chip 70 is inserted so that the window 614 and the side surface 7 of the laminated chip 70, particularly the surface to be polished 700, overlap along the bottom surface 611. The tank 61 is configured such that when the retainer ring 80 into which the laminated chip 70 is inserted is placed in the tank 61, the surface to be polished 700 of the laminated chip 70 is positioned so that it can be properly imaged by the imaging device 621, with the third retainer-side positioning unit 87 engaging with the tank-side positioning unit 615. Here, "properly imaged" means, for example, that the surface to be polished 700 is located within a range where the imaging device 621 can focus at a magnification that allows it to distinguish the marker 740. With this configuration, the marker 740 and the like on the surface to be polished 700 can be imaged more efficiently and reliably.

[0120] When imaging the stacked chip 70, it is preferable that liquid is introduced into the space SP1 in the tank 61. This prevents the polished surface 700 of the stacked chip 70 from being clearly imaged due to water droplets. The liquid is preferably transparent and can be, for example, pure water. As shown in Figure 30, the tank 61 may be provided with at least one of a liquid inlet 618 for introducing liquid into the space SP1 and a liquid outlet 619 for discharging liquid from the space SP1. This allows for the removal of unwanted substances such as particles present on the surface of the window 614. Furthermore, it allows for smooth introduction or discharge of liquid, and makes it easier to control the introduction or discharge of liquid using a valve or the like. In addition, in the illustrated example, the liquid inlet 618 is in fluid communication with a liquid source 600 via a liquid flow path. The control device 900 can control the introduction of liquid into the tank 61 by controlling a valve or the like (not shown) located in the liquid flow path. Furthermore, a pump or valve (not shown) is placed in a flow path communicating with the liquid outlet 619, and the control device 900 can control the discharge of liquid from the tank 61 by controlling the pump or valve.

[0121] As shown in Figure 30, the imaging module 60 may include an imaging device housing 622. The imaging device housing 622 is not particularly limited as long as the imaging device 621 can be positioned appropriately for imaging. The imaging device housing 622 may include an air inlet 623. The air inlet 623 is in fluid communication with a compressed air source containing compressed air via an air passage (not shown), and the control device 900 may be configured to control valves in the air passage. By introducing compressed air into the imaging device housing 622 from the air inlet 623, dust and other particles that may interfere with imaging can be removed.

[0122] The control device 900 can control the movement of the polishing head 40 to the imaging module 60 and the placement of the stacked chip 70 and retainer ring 80 held by the polishing head 40 into the tank. Simultaneously, the control device 900 may control the introduction of liquid into the tank and the discharge of liquid from the tank 61.

[0123] Figure 31 is a schematic cross-sectional view showing the control of the polishing head 40 and the imaging module 60 by the control device 900. In Figure 31, the polishing head 40 is not shown, but the laminated chip 70 and retainer ring 80 held by the polishing head 40 are shown. The control device 900 introduces liquid LD1 into the tank 61 from the liquid inlet 618 before the laminated chip 70 and retainer ring 80 are placed on the bottom surface 611. When the control device 900 controls the polishing head 40 to move the laminated chip 70 and retainer ring 80 toward the bottom surface 611, it can immerse the imaged side surface 7 of the laminated chip 70 in the liquid LD1 so that it does not come into contact with the bottom surface 611, and can temporarily maintain this state. This promotes the removal of unwanted materials such as particles present on the surface of the window 614 due to the shaking or flow of the liquid LD1. Furthermore, in this state, the control device 900 can control the introduction of liquid LD1 into space SP1 of the tank 61 and the discharge of liquid LD1 from space SP1. This generates a flow (see arrow FL) within the tank 61, further promoting the removal of unwanted substances such as particles present on the surface of the window 614.

[0124] Figure 32 is a schematic cross-sectional view showing a laminated chip 70 and a retainer ring 80 positioned and arranged in a tank 61 by a tank-side positioning unit 615. The polishing head 40, the laminated chip 70, and the retainer ring 80 may be separated when imaging is performed by the imaging device 621, or they may be in contact when imaging is performed. In the illustrated example, the protrusion of the tank-side positioning unit 615 fits into the hole of the third retainer-side positioning unit 87, restricting the movement of the retainer ring 80 in the direction along the bottom surface 611. By imaging the surface to be polished 700 with the liquid LD1 introduced into the tank 61, adverse effects on imaging by water droplets and other objects on the surface to be polished 700 can be prevented. The control device 900 can acquire at least one of marker information and polishing amount data based on imaging data obtained by imaging the side surface 7 of the laminated chip 70 which is positioned to overlap with the window 614. This makes it possible to obtain information about the amount of polishing of the surface to be polished 700 more efficiently and reliably.

[0125] In the polishing method of this embodiment, the polished surface 700 of the laminated chip 70 can be imaged with the retainer ring 80 and the laminated chip 70 removed from the polishing head 40. This reduces adverse effects on imaging caused by vibrations due to the suction of the polishing head 40.

[0126] The imaging method according to this embodiment is an imaging method for imaging the side surface 7 of a stacked chip 70, and includes placing the stacked chip 70 and retainer ring 80 in a tank 61 holding liquid LD1, and imaging the side surface 7 through a window 614 using an imaging device 621. This makes it possible to image the surface to be polished 700 without changing the orientation of the stacked chip 70, and also reduces the influence of the adhesion of unwanted substances to the surface to be polished 700 on the imaging by using liquid. The polishing method of this embodiment may include imaging the side surface 7 using the imaging method and polishing the side surface 7 of the stacked chip 70. This makes it possible to obtain information based on the appearance of the imaged side surface 7 more efficiently or more reliably. The imaging module 60 may also image side surfaces 7 other than the surface to be polished 700 of the stacked chip 70. Furthermore, the polishing apparatus 1000 does not necessarily have to include the imaging module 60, and the user may image the surface to be polished 700 with an imaging device such as a camera and input marker information, polishing amount data, or polishing conditions to the control device 900. The surface to be polished 700 may be imaged while it is not submerged in the liquid.

[0127] Figures 33, 34, and 35 are flowcharts showing the flow of the polishing method according to this embodiment. This polishing method is performed by a control device 900, etc. In step S101, the control device 900 controls the transport device 20 to insert the laminated chip 70 into the retainer ring 80. After step S101, step S102 is performed. In step S102, the control device 900 controls the polishing head 40 to attach the laminated chip 70 and the retainer ring 80 to the polishing head 40. After step S102, step S103 is performed.

[0128] In step S103, the control device 900 controls the polishing head 40 and the polishing tool support module 200 to polish the laminated chip 70. After step S103, step S104 is performed.

[0129] Figure 34 is a flowchart showing the flow of a method for controlling the moment M1 generated in the laminated chip 70 during polishing in step S103. The control device 900 can start controlling the moment M1 at the start of polishing or based on user input, etc. In step S1031, the moment is measured by the moment measuring device 420, and the control device 900 acquires the moment measurement data. After step S1031, step S1032 is performed.

[0130] In step S1032, the control device 900 adjusts the pressure applied by the pressing actuator 450. Based on the moment measurement data, the control device 900 calculates the numerical value necessary to adjust the pressure of the pressing actuator 450 in order to control the moment M1, and then adjusts the pressure. After step S1032, step S1033 is performed. In step S1033, the control device 900 determines whether or not to terminate the control of moment M1. The control device 900 may terminate the control of moment M1 when polishing is completed or when an instruction to terminate the control of moment M1 is input, etc., and may not terminate the control of moment M1 in other cases. If the control of moment M1 is terminated, the control device 900 terminates the control process of moment M1. If the control of moment M1 is not terminated, step S1031 is performed.

[0131] In step S104 (Figure 33), the control device 900 controls the polishing head 40 or a cleaning device (not shown) to clean the laminated chip 70. After step S104, step S105 is performed. In step S105, the control device 900 performs an imaging step. In the imaging step, the control device 900 controls the polishing head 40 and the imaging module 60 to image the surface to be polished 700 and acquire marker information or polishing amount data based on the imaging data. Alternatively, in the imaging step, the user may perform the imaging, and the control device 900 may acquire marker information or polishing amount data based on user input. After step S105, step S106 is performed.

[0132] Figure 35 is a flowchart showing a preferred example of the imaging process in step S105. After step S104, step S1051 is performed. In step S1051, the control device 900 controls the polishing head 40 to immerse the stacked chip 70 in the liquid LD1 in the tank 61 of the imaging module 60. After step S1051, step S1052 is performed. In step S1052, the control device 900 causes a flow of liquid LD1 in the tank 61 by introducing liquid LD1 from the liquid inlet 418 or discharging liquid LD1 from the liquid outlet 419. This flow can remove unwanted material from the window 614 or the surface to be polished 700. After step S1052, step S1053 is performed.

[0133] In step S1053, the control device 900 controls the imaging device 621 to image the polished surface 700 of the stacked chip 70. After step S1053, step S1054 is performed. In step S1054, the control device 900 acquires imaging data, marker information, or polishing amount data obtained from imaging the polished surface 700. After step S1054, step S106 is performed.

[0134] In step S106 (Figure 33), the control device 900 determines whether to polish the surface to be polished 700 again. This determination may be made based on input from the user indicating whether or not to polish again, or it may be made based on marker information or polishing amount data. For example, if all first markers 741 are detected in the marker information, the control device 900 can terminate the polishing of the surface to be polished 700. If there are undetected first markers 741, the control device 900 can determine to polish the surface to be polished 700 again. Alternatively, the control device 900 can refer to the target range of the polishing amount stored in the storage device 930, etc., and terminate the polishing of the surface to be polished 700 if the polishing amount indicated by the polishing amount data is within the target range or if excessive polishing has been performed. If the surface to be polished 700 is to be polished again, step S102 is performed. If the surface to be polished 700 is not to be polished, step S107 is performed.

[0135] In step S107, the control device 900 determines whether or not to polish the other side surface 7 of the laminated chip 70. This determination is made based on polishing conditions, etc., that have been set in advance by the user, etc. If the other side surface 7 is to be polished, step S108 is performed. If the other side surface 7 is not to be polished, the control device 900 terminates the polishing process, performs appropriate cleaning of the laminated chip 70, etc., and then transports the laminated chip 70 using a transport pallet, etc. (not shown).

[0136] In step S108, the control device 900 controls the orientation change module 50 or the transport device 20, etc., to insert the laminated chip 70 into the retainer ring 80 so that a side 7 of the laminated chip 70 different from the polished side 7 can be polished. The control device 900 can control the polishing head 40 to position the laminated chip 70 on the retainer ring support base 30 (Figure 1). For example, the control device 900 can move the polishing head 40, which holds the laminated chip 70 and the retainer ring 80, above the retainer ring support base 30, bring the laminated chip 70 and the retainer ring 80 into contact with the retainer ring support base 30, and terminate the suction through the first suction channel 412 (Figure 13) and the second suction channel 472 to position the laminated chip 70 and the retainer ring 80 on the retainer ring support base 30. After that, the control device 900 controls the transport device 20 to transport the laminated chip 70 and hand it over to the orientation change device 51. Subsequently, the control device 900 controls the orientation changing device 51 to change the orientation of the laminated chip 70, and controls the orientation changing device 51 or the transport device 20 to reposition the laminated chip 70 on the retainer ring support base 30. The control device 900 allows the transport device 20 to insert the orientation-changed laminated chip 70 into the retainer ring 80 on the retainer ring support base 30. After step S108 is completed, step S102 is performed.

[0137] Modification 1 In the polishing method of the above embodiment, the polishing step may include a first polishing step in which the polishing tool 100 is brought into contact with the surface to be polished 700 and the polishing tool 100 is moved relative to the surface to be polished 700 along the surface to be polished 700 while supporting the laminated chip 70 so that it faces a predetermined direction, and a second polishing step in which rotational polishing is performed. The polishing method of this modification can suitably polish the laminated side surface 72, but is not limited thereto.

[0138] Figure 36 is a schematic diagram showing the first polishing step (left) and the second polishing step (right) in this modified example. In the first polishing step, the laminated chip 70 may be supported or fixed so as not to rotate around the head rotation axis AXR. Alternatively, the control device 900 controls the polishing to be performed without driving the rotation of the laminated chip 70 around the head rotation axis AXR. In the second polishing step, the polished surface 700 polished in the first polishing step is polished while the laminated chip 70 is rotated relative to the polishing tool 100 around the head rotation axis AXR. As schematically shown by arrow AR10, the second polishing step is performed after the first polishing step.

[0139] As described in the above embodiment, in rotary polishing, the moment M1 fluctuates periodically, making it difficult to flatten the polished surface 700. In addition, even when controlling the moment M1, it is not easy to completely cancel it out or to control it precisely. In other words, by suppressing the rotation of the laminated chip 70 around the head rotation axis AXR during polishing, it is possible to achieve a flat polished surface 700, or to control the moment M1 more precisely, and to perform polishing that results in a laminated chip 70 having a shape closer to the intended shape, especially at the edges of the polished surface 700. However, when the polishing tool 100 moves relative to a non-rotating polished surface 700 in a limited direction, scratches or damage may occur along the limited direction, making it difficult to suppress surface roughness. On the other hand, in rotary polishing, the polishing tool 100 moves relative to the polished surface 700 in various directions, making it easier to suppress surface roughness.

[0140] Therefore, by performing a second polishing step, which involves rotary polishing, after the first polishing step, the polished surface 700 can be roughly shaped into a flat surface in the first polishing step, and scratches or blemishes can be removed or surface roughness reduced in the second polishing step. Here, in the second polishing step, it is not necessarily required to rotate at a constant speed or in the same direction; it is sufficient that the rotation reduces the bias in the direction of relative movement of the polishing tool 100 with respect to the polished surface 700. However, from the viewpoint of performing polishing with greater precision, it is preferable to rotate at a constant speed or in the same direction.

[0141] In the first polishing step, it is preferable that the polishing tool 100 moves linearly relative to the laminated chip 70 along one direction. This suppresses fluctuations in the moment M1 generated in the laminated chip 70, and further enables the realization of a flat polished surface 700 or a laminated chip 70 with a shape closer to the intended shape. In at least one of the first and second polishing steps, the moment M1 generated in the laminated chip 70 is measured, and the moment M1 applied to the laminated chip 70 can be controlled based on the moment measurement data obtained from the measurement. This allows for more precise polishing, especially of the shape of the edges of the polished surface 700, and in particular, since rotation is suppressed in the first polishing step, the moment M1 can be precisely controlled and precise polishing can be performed.

[0142] The second polishing step can be performed as a finish polish. From this perspective, it is preferable to image the polished surface 700 during or after the second polishing step to acquire at least one of marker information and polishing amount data. This allows for more precise adjustment of the polishing amount toward the target polishing amount. Furthermore, it is not necessary to image the polished surface 700 during the first polishing step, in which case polishing can be performed more efficiently.

[0143] In the polishing method and polishing apparatus of this embodiment, the control device 900 controls the polishing head 40 and the polishing tool support module 200 to perform a first polishing step in which the polishing tool 100 is moved relative to the laminated chip 70 along the side surface 7 while the polishing tool 100 is in contact with the side surface 7 of the laminated chip 70. Subsequently, the control device 900 controls the polishing head 40 and the polishing tool support module 200 to perform a second polishing step in which the side surface 7 is polished while the laminated chip 70 is rotated relative to the polishing tool 100 around an axis perpendicular to the side surface 7 polished in the first polishing step.

[0144] Figure 37 is a flowchart showing the flow of the polishing method of this modified example. Steps S201 and S204-S208 are the same as steps S101 and S104-S108 (Figure 33) of the above-described embodiment, so their explanations will be omitted as appropriate. Steps S202A and S202B are the same as step S202 of the above-described embodiment, so their explanations will be omitted as appropriate. After step S201, step S202A is performed. After step S202A, step S203A is performed. In step S203A, the control device 900 controls the polishing head 40 and the polishing tool support module 200, etc. to perform the first polishing process. After step S203A, step S203B is performed. In step S203B, the control device 900 controls the polishing head 40 and the polishing tool support module 200, etc. to perform the second polishing process. After step S203B, steps S204-S208 are performed in the same manner as steps S104-S108 of the above embodiment. However, in this modified example, if it is determined in step S206 that the polished surface 700 polished in step S203B should be polished again, step S202B is performed. After step S202B, step S203B is performed.

[0145] Modification 2 In the above embodiment, the retainer ring 80 may be formed on the inner wall surface 83 that defines the through-opening 8 and may have a supply port for supplying liquid to the through-opening 8.

[0146] Figure 38 is a schematic cross-sectional view showing the retainer ring 80A and polishing head 40A according to this modified example. The retainer ring 80A is provided with a supply port 835 formed in the inner wall surface 83 that defines the through opening 8. When the laminated tip 70 is inserted into the retainer ring 80A, a gap CL1 is formed between the laminated tip 70 and the inner wall surface 83. The gap CL1 can be a space defined by the laminated tip 70, the inner wall surface 83, and the polishing surface 110 of the polishing tool 100. The supply port 835 is positioned to introduce the liquid LD2 into the gap CL1. As illustrated in the control of the moment M1 described above, the posture of the laminated tip 70 and the retainer ring 80A can change independently. Therefore, the laminated tip 70 may come into contact with the retainer ring 80A and be damaged. In this modified example, a layer of liquid LD2 can be formed between the laminated chip 70 and the retainer ring 80A by supplying liquid LD2 from the supply port 835 of the retainer ring 80A to the through-opening 8. This reduces the risk of damage to the laminated chip 70, such as scratches on the side surface 7 or chipping of the edges, caused by the above-mentioned contact. Thus, it is preferable that the retainer ring 80A is configured such that liquid LD2 is held in the gap CL1 when the side surface 7 of the laminated chip 70 is being polished.

[0147] The retainer ring 80A includes a first retainer-side opening 811 formed on the first retainer surface S10 and a first retainer-side flow path 815 that fluidly communicates the supply port 835 and the first retainer-side opening 811. The polishing head 40A includes a first head-side opening 4701 formed on the retainer ring mounting surface 482 and a first head-side flow path 475 that fluidly communicates the first head-side opening 4701 and a liquid source (not shown). The control device 900 can control the supply of liquid LD2 to the through-opening 8 by controlling a valve or the like located in the first head-side flow path 475. When the retainer ring 80A is positioned and attached to the polishing head 40A, the first retainer-side flow path 815 and the first head-side flow path 475 are configured to be in fluid communication. In other words, the retainer ring 80A is attached to the polishing head 40A such that the first head-side opening 4701 and the first retainer-side opening 811 overlap along the retainer ring mounting surface 482. In this way, it is preferable that the polishing apparatus 1000 has a fluid flow path that is in fluid communication with the supply port 835 of the retainer ring 80A and passes through the inside of the retainer ring 80A and the inside of the polishing head 40A. This makes it possible to more reliably supply the liquid LD2 to the through-opening 8 and to easily control the supply of the liquid LD2. The composition of the liquid LD2 is not particularly limited, and for example, it can be pure water from the viewpoint of ease of availability and handling.

[0148] As shown in Figure 38, the retainer ring 80A preferably has an outlet 836 formed on its inner wall surface 83 for discharging the liquid LD2 from the through-opening 8. This allows for more flexible control of the amount of liquid LD2, such as replacing the liquid LD2 in the gap CL1. The retainer ring 80A includes a second retainer-side opening 812 formed on the first retainer surface S10 and a second retainer-side flow path 816 that fluidly connects the outlet 836 and the second retainer-side opening 812. The polishing head 40A includes a second head-side opening 4702 formed on the retainer ring mounting surface 482 and a second head-side flow path 476 that fluidly connects the second head-side opening 4702 and a suction device (not shown). The control device 900 can control the discharge of the liquid LD2 from the through-opening 8 by controlling the suction device or a valve, etc. The retainer ring 80A is configured such that when it is positioned and attached to the polishing head 40A, the second retainer-side flow path 816 and the second head-side flow path 476 are in fluid communication. In other words, the retainer ring 80A is attached to the polishing head 40A such that the second head-side opening 4702 and the second retainer-side opening 812 overlap along the retainer ring mounting surface 482. In this way, it is preferable that the polishing apparatus 1000 has a flow path that is in fluid communication with the discharge port 836 of the retainer ring 80A and passes through the inside of the retainer ring 80A and the inside of the polishing head 40A.

[0149] Figure 39 is a schematic cross-sectional view showing an example of the arrangement of supply ports 835 in the retainer ring 80A. It is preferable that supply ports 835 are formed on each of a pair of opposing first inner wall surfaces 831 on the inner wall surface 83. This prevents the laminated chip 70 from being displaced due to the pressure of the liquid LD2 by introducing the liquid LD2 from both sides of the laminated chip 70. In addition, it is preferable that supply ports 835 are formed on each of a pair of second inner wall surfaces 832 that face each other in a direction substantially perpendicular to the direction in which the first inner wall surfaces 831 face each other on the inner wall surface 83. This allows the liquid LD2 to be more reliably distributed around the entire circumference of the gap CL1 surrounding the laminated chip 70. For example, the retainer ring 80A can have a total of four supply ports 835 formed on each of the pair of first inner wall surfaces 831 and the pair of second inner wall surfaces 832. The number of supply ports 835 and discharge ports 836 formed in the retainer ring 80A is not particularly limited. Supply ports 835 or discharge ports 836 may be formed only on a part of the first inner wall surface 831 and the second inner wall surface 832, or multiple supply ports 835 or discharge ports 836 may be formed on a single first inner wall surface 831 or the second inner wall surface 832.

[0150] Figure 40 is a flowchart showing the flow of the polishing method of this modified example. After step S102 (Figure 33) of the above-described embodiment, step S301 is performed. In step S301, the control device 900 controls the polishing head 40A to move to the polishing tool support module 200, and brings the retainer ring 80A attached to the polishing head 40A into contact with the polishing tool 100. After step S301, step S302 is performed. In step S302, the control device 900 controls a valve or the like arranged in the first head-side flow path 475, etc., to supply liquid LD2 to the through-opening 8 of the retainer ring 80A. After step S302, step S103 is performed. Note that the supply of liquid LD2 to the through-opening 8 and the discharge from the through-opening 8 may be performed during polishing.

[0151] In this modified polishing method, the control device 900 is configured to supply liquid LD2 between the retainer ring 80A and the laminated chip 70 via the supply port 835 while the side surface 7 of the laminated chip 70 is being polished. This suppresses the risk of damage to the laminated chip 70 due to contact between the retainer ring 80A and the laminated chip 70.

[0152] Modification 3 Figure 41 is a conceptual diagram illustrating the imaging of the polished surface 700 in this modification. As shown in Figure 41, in the above embodiment, the control device 900 may control the imaging module 60, etc., and perform imaging of the polished surface 700 with the retainer ring 80 and the laminated chip 70 attached to the polishing head 40. This makes it possible to perform imaging of the polished surface 700 more quickly and efficiently and acquire marker information, etc.

[0153] Modification 4 In the above embodiment, the laminated chip 70 may be polished on multiple sides 7 while maintaining a wet state. In this modification, a first wet polishing step is performed to wet polish the first side 701 of the sides 7 of the laminated chip 70, and after the first wet polishing step, a second wet polishing step is performed to wet polish a second side 702 that is different from the first side 701. Between the first wet polishing step and the second wet polishing step, a rotation step is performed to rotate the laminated chip 70. In the rotation step, the orientation of the laminated chip 70 is changed in order to polish the second side 702. The rotation step can be performed by an orientation changing module 50A or the like.

[0154] In the first and second wet polishing steps, wet polishing is performed while supplying liquid to the polishing tool 100 from a liquid supply device 240 (Figure 15). The liquid may be pure water or a slurry. The wet polishing is preferably CMP polishing, in which a slurry is supplied to the surface to be polished 700, but is not limited to this. In this modified example, it is preferable, but is not limited to, that the laminated side surface 72 extending along the lamination direction of the laminated chip 70 is polished. The first side surface 701 and the second side surface 702 are both preferably laminated side surfaces 72, and the second side surface 702 may be the side surface 7 on the laminated chip 70 opposite to the first side surface 701. From the viewpoint of polishing the second side surface 702 more precisely, a cleaning step may be performed between the first and second wet polishing steps. In the cleaning step, the laminated chip 70 is cleaned. In the cleaning process, the laminated chip 70 may be cleaned while inserted into the retainer ring 80, or it may be cleaned while not inserted into the retainer ring 80.

[0155] Figure 42 is a conceptual diagram illustrating the rotation process according to this modified example. Figure 42 corresponds to a schematic cross-sectional view of the attitude change module 50A according to this modified example. The attitude change module 50A comprises an attitude change device 51 and a liquid tank 52 capable of containing liquid LD3.

[0156] In the rotation process performed after the first wet polishing process, it is preferable that the laminated chip 70 is rotated while wet. After the laminated chip 70 is rotated while wet by the orientation changing device 51, the transport device 20 can position the rotated laminated chip 70 on the retainer ring support base 30, which is a support, so that it is supported via a second side surface 702 that is different from the first side surface 701. The rotation process may be performed to polish different side surfaces 7 of the laminated chip 70, or to insert the laminated chip 70 into the retainer ring 80 in the appropriate orientation before polishing different side surfaces 7. In the rotation process, by positioning the surface to be polished 700 to be polished vertically downwards, the surface to be polished 700 can be transported in the same orientation as during polishing, and the attachment of the laminated chip 70 to the polishing head 40 can be performed efficiently. Performing the rotation process while the laminated chip 70 is wet suppresses the adhesion of unwanted materials to the laminated chip 70, and multiple side surfaces 7 can be polished efficiently.

[0157] In the rotation process, after the first wet polishing process, the conveying device 20 transports the laminated chip 70 while it is still wet, and hands it over to the orientation changing device 51 (see Figure 11B). The orientation changing device 51 holds the laminated chip 70 and immerses it in the liquid LD3 in the liquid tank 52. As shown in Figure 42, with the laminated chip 70 immersed in the liquid LD3, the orientation changing device 51 drives the rotation holding unit 510 with the motor 511 (see Figure 11B) to rotate the laminated chip 70 so that the second side surface 702 is vertically downward. It is preferable that the rotation of the laminated chip 70 in the rotation process is performed while the sides 7 other than the first side surface 701 are supported by the orientation changing device 51. This reduces the possibility of unwanted materials adhering to the first side surface 701, which has already been polished, and causing adverse effects. Furthermore, when the first side surface 701 and the second side surface 702 are the laminated side surface 72, as shown in Figure 42, the rotation of the laminated chip during the rotation process can be performed while either or both of the pair of chip surfaces 71 are supported. The laminated side surface 72 may have irregularities or the adhesive layer 74 may be exposed, making it prone to the adhesion of unwanted materials, and the possibility of adverse effects due to the adhesion of such unwanted materials can be reduced.

[0158] The rotation of the laminated chip 70 during the rotation process can be performed while the laminated chip 70 is being cleaned. This allows for efficient polishing of multiple sides 7. As shown in Figure 42, the cleaning of the laminated chip 70 may be performed by immersing the laminated chip 70 in liquid LD3. Liquid LD3 is preferably a cleaning solution, but pure water or the like may also be used. The rotation of the laminated chip 70 during the rotation process is preferably performed while the laminated chip 70 is immersed in liquid LD3. This allows for efficient simultaneous cleaning and orientation change without requiring complicated procedures.

[0159] Figure 43 is a flowchart showing the flow of step S108 (Figure 33) in the polishing method of this modified example. After polishing the first side surface 701, if it is determined in step S107 to polish a side surface 7 different from the first side surface 701, step S1081 is performed. In step S1081, the control device 900 controls the polishing head 40 and the transport device 20 to transport the laminated chip 70 to the attitude change module 50A. After step S1081, step S1081 is performed. In step S1082, the control device 900 controls the attitude change device 51 to rotate the laminated chip 70 so that the second side surface 702 is vertically downward. After step S1082, step S1083 is performed. In step S1083, the control device 900 controls the transport device 20 to transport the laminated chip 70 from the attitude change module 50A to the retainer ring support base 30 and insert the laminated chip 70 into the retainer ring 80.

[0160] Modification 5: In the above embodiment, the stacked chip 70 may be inverted while it is inserted into the retainer ring.

[0161] Figure 44A is a schematic diagram showing the posture change module 50B of this modified example. The posture change module 50B includes a posture change device 51A. The posture change device 51A includes a rotating holding unit 510A and a motor 511 that drives the rotation of the rotating holding unit 510A. In this modified example, the polishing device 1000 or polishing system 1100 includes a retainer ring 80B. The retainer ring 80B may have substantially the same configuration as the retainer ring 80 of the above-described embodiment, but it is preferable that a chamfered portion 82 is not formed so that the amount of polishing can be suitably adjusted regardless of which of the first retainer surface S10 and the second retainer surface S20 (Figure 5) is brought into contact with the polishing tool 100. The rotating holding unit 510A is configured to be rotatable while holding the retainer ring 80B and the laminated chip 70 inserted into the retainer ring 80B. In the illustrated example, the rotating holding portion 510A is a plate-shaped member comprising a first retainer surface S10 and a second retainer surface S20 of the retainer ring 80B, and a suction surface 512 configured to contact and adsorb to the polished surface 700 of the laminated chip 70. The shape of the rotating holding portion 510A is not particularly limited as long as such adsorption is possible.

[0162] After the first side surface 701 is polished in the first wet polishing process, the control device 900 controls the transport device 20 to transport the laminated chip 70 to the attitude change module 50B. The control device 900 controls the attitude change device 51A to move the arm on which the rotating holding unit 510A is located, and attaches the rotating holding unit 510A to the laminated chip 70 and retainer ring 80B held by the polishing head 40. The rotating holding unit 510A holds the laminated chip 70 and retainer ring 80B on the suction surface by suction. After that, the polishing head 40 is removed from the laminated chip 70 and retainer ring 80B.

[0163] Figure 44B is a schematic diagram showing the rotation of the laminated chip 70 and retainer ring 80B by the attitude changing device 51A. While the laminated chip 70 and retainer ring 80B are held on the suction surface, the motor 511 is driven by the control device 900, and the rotating holding unit 510A is rotated. In the illustrated example, the rotating holding unit 510A is rotated so that the suction surface 512 is vertically downward, and the attitude is changed so that the first side surface 701 is vertically upward and the second side surface 702 is vertically downward.

[0164] Figure 44C is a schematic diagram showing the placement of the laminated chip 70 and retainer ring 80B on the support 55 after inversion of the laminated chip 70 and retainer ring 80B. The support 55 is not particularly limited as long as it can temporarily hold the laminated chip 70 and retainer ring 80B, and can be a support such as a retainer ring support base 30. The rotating holding unit 510A can be removed from the laminated chip 70 and retainer ring 80B by stopping the suction at the suction surface 512 above the support 55.

[0165] In this modified polishing method, during the first wet polishing step, the first side surface 701 of the laminated tip 70 is wet polished while the retainer ring 80B and the laminated tip 70 inserted in the retainer ring 80B are attached to the polishing head 40. After the first wet polishing step, the laminated tip 70 and the retainer ring 80B are removed from the polishing head 40. During the rotation step, with the laminated tip 70 still inserted in the retainer ring 80B that has been removed from the polishing head 40, the laminated tip 70 is inverted so that the second side surface 702 opposite to the first side surface 701 can be polished.

[0166] Second Embodiment: In the above embodiment, during polishing, the polishing surface 700 may be brought into contact with the polishing tool 100 while imaging of the polishing surface 700 is performed.

[0167] Figures 45 and 46 are schematic plan view and schematic cross-sectional view, respectively, showing the polishing module 2A according to this embodiment. The polishing system 1100A of this embodiment comprises a polishing device 1000A and a polishing tool 100A. The polishing device 1000A has substantially the same configuration as the polishing device 1000 of the above-described embodiment, but differs from the polishing device 1000 in that it includes a polishing module 2A instead of polishing module 2. The polishing device 1000A may or may not include an imaging module 60.

[0168] The polishing tool 100A is in sheet form and is prepared wound on a supply roller 222, and is configured to be fed towards the polishing platen 210 by the rotation of the feed motor 221. The polishing tool 100A has a sheet width W1 in the feed direction (second sheet direction), which is the direction in which the polishing tool 100A is fed out, and in the width direction (first sheet direction) which is perpendicular to the thickness direction.

[0169] The polishing tool 100A comprises a polishing tool body 101 and at least one transparent portion 102 that is continuously or intermittently formed along the feeding direction. The polishing system 1100A is configured to allow imaging of the surface to be polished 700 while the surface to be polished 700 is in contact with the transparent portion 102. This allows imaging of the surface to be polished 700 to be performed without interrupting polishing or moving the polishing head 40 to the imaging module 60, etc., thereby obtaining marker information or polishing amount data, and enabling efficient polishing. To suppress a decrease in polishing efficiency, the transparent portion width W2, which is the width of the transparent portion 102 in the width direction, is preferably half or less of the sheet width W1, more preferably one-third or less, and even more preferably one-fifth or less.

[0170] The width W2 of the transparent portion is preferably longer than the maximum diameter of the through-opening LM1 (Figure 4), which is the maximum diameter of the through-opening 8 in the second retainer surface S20 of the retainer ring 80, or the maximum diameter of the chip LM2 (Figure 26), which is the maximum diameter of the polished surface 700 of the laminated chip 70. This makes it easier to simultaneously image the entire polished surface 700, and to obtain information about the marker 740 or the amount of polishing more precisely or more efficiently. The polishing system 1100A may include a retainer ring 80 configured to be held by the polishing head 40.

[0171] The type of polishing tool 100 is not particularly limited as long as it can form a transparent portion 102, and can be, for example, a polishing film, a polishing pad, a polishing tape, a grinding wheel, or a lapping plate.

[0172] The polishing module 2A comprises a polishing tool support module 200A and the chip holding device 4 described above. The polishing tool support module 200A is configured to move the polishing tool 100A along the feeding direction. This allows for the supply of a new transparent portion 102, thereby preventing adverse effects on imaging, etc., due to dirt on the transparent portion 102. The polishing tool support module 200A has substantially the same configuration as the polishing tool support module 200 described above, but differs from the polishing tool support module 200 in that it includes an imaging device 250 and a polishing platen 210A instead of the polishing platen 210. The polishing platen 210A includes a platen window 211 positioned perpendicular to the polishing surface 110 with respect to the position through which the transparent portion 102 of the polishing tool 100A passes. The platen window 211 defines the platen surface 212 on which the polishing tool 100A is placed in the polishing platen 210A, and is configured to allow imaging of the polished surface 700 through the platen window 211. The surface plate window 211 allows for imaging of the surface 700 being polished while supporting the polishing tool 100A.

[0173] The imaging device 250 is positioned on the opposite side of the polishing tool 100A from the surface plate window 211, and is configured to image the surface to be polished 700 while it is in contact with the transparent portion 102 during polishing. The type of imaging device 250 is not particularly limited as long as it can image the markers 740 exposed on the surface to be polished 700 in a distinguishable manner. Preferably, the imaging device 250 is a camera capable of converting visible light into photoelectric energy. Furthermore, from the viewpoint of magnifying and imaging the markers 740 with high resolution, it is preferable that the imaging device 250 is an imaging microscope.

[0174] The control device 900 controls the polishing head 40 and the polishing tool support module 200A, and is configured to perform imaging with the imaging device 250 while bringing the laminated chip 70 attached to the polishing head 40 into contact with the transparent portion 102. The control device 900 is configured to control the polishing head 40 so that the surface to be polished 700 is in contact with the transparent portion 102 for at least a portion of the polishing period of the surface to be polished 700. This makes it possible to more reliably image the surface to be polished 700 during polishing and obtain information about the marker 740 or the amount of polishing. Since polishing can be performed more precisely by bringing the surface to be polished 700 into contact with the polishing tool body 101 rather than the transparent portion 102, it is preferable that the control device 900 moves the laminated chip 70 so that the surface to be polished 700 is in intermittent contact with the transparent portion 102. For example, it is preferable that the laminated chip 70 is controlled to move along a circular orbit along the polishing surface, and that the entire surface to be polished 700 can be imaged through the transparent portion 102 in a portion of the circular orbit. The control device 900 can acquire at least one of marker information based on imaging data obtained by imaging by the imaging device 250, and polishing amount data based on the marker information, and can control polishing based on the marker information or polishing amount data, etc.

[0175] Figure 47 is a flowchart showing the flow of the polishing method according to this embodiment. This polishing method is performed by the control device 900. Steps S401 and S402 are the same as steps S101 and S102 in the above-described embodiment, so their explanation is omitted. After step S402, step S403 is performed. In step S403, the control device 900 controls the polishing head 40 and the polishing tool support module 200A, etc., and performs an imaging process while polishing the laminated chip 70. In the imaging process, the polished surface 700 is imaged while the polished surface 700 is in contact with the transparent portion 102 of the polishing tool 100A. After the imaging process in step S403, step S404 is performed.

[0176] In step S404, the control device 900 determines whether to continue polishing the surface to be polished 700. This determination may be made based on marker information or polishing amount data obtained from imaging data of the surface to be polished 700. For example, if all first markers 741 are detected in the marker information, the control device 900 can terminate the polishing. If there are undetected first markers 741, the control device 900 can determine to continue polishing. Alternatively, the control device 900 can refer to the target range of the polishing amount stored in the storage device 930, etc., and terminate the polishing if the polishing amount indicated by the polishing amount data is within the target range or if excessive polishing is being performed. If polishing of the surface to be polished 700 is to be continued, step S403 is performed. If polishing of the surface to be polished 700 is not to be performed, step S405 is performed. Steps S405 and S406 are the same as steps S107 and S108 in the above-described embodiment, so their explanation is omitted.

[0177] The embodiments described above can also be described in the following forms. [Embodiment 1] According to Embodiment 1, a polishing method is proposed, which is a polishing method for polishing the side surface of a stacked chip including a plurality of stacked semiconductor chips, and includes an insertion step of inserting the stacked chip into a through-opening of a retainer ring, an attachment step of attaching the retainer ring and the stacked chip to a polishing head with the stacked chip inserted into the through-opening, and a polishing step of polishing the side surface of the stacked chip attached to the polishing head. According to Embodiment 1, the transport and attachment to the polishing head of stacked chips, which are generally small and difficult to handle, can be made easier. In addition, the stacked chip can be protected by the retainer ring when transporting the stacked chip.

[0178] [Embodiment 2] According to Embodiment 2, in Embodiment 1, the retainer ring comprises a first retainer surface on the side of the retainer ring that is attached to the polishing head, a second retainer surface on the opposite side of the first retainer surface, and an inner wall surface that defines the through-opening, the through-opening extending from the first retainer surface to the second retainer surface, the inner wall surface being chamfered on the side facing the first retainer surface, and in the insertion step, the laminated chip is inserted into the through-opening from the side of the first retainer surface of the retainer ring. According to Embodiment 2, insertion of the laminated chip into the retainer ring can be facilitated.

[0179] [Embodiment 3] According to embodiment 3, in embodiment 1 or 2, the retainer ring further comprises a pair of first inner wall surfaces facing a first direction and a pair of second inner wall surfaces facing a second direction substantially perpendicular to the first direction, the pair of first inner wall surfaces and the pair of second inner wall surfaces are planar and define the through opening. According to embodiment 3, when the side surface of the laminated chip is rectangular, it is possible to easily adjust the amount of polishing.

[0180] [Embodiment 4] According to embodiment 4, in any of embodiments 1 to 3, the retainer ring and the stacked chip are removed from the polishing head, and the image of the side surface of the stacked chip is further included. According to embodiment 4, adverse effects on imaging caused by vibrations due to suction of the polishing head can be reduced.

[0181] [Embodiment 5] According to embodiment 5, in any of embodiments 1 to 3, the retainer ring and the stacked chip are attached to the polishing head, and the image of the side surface of the stacked chip is further included. According to embodiment 5, the surface to be polished can be imaged more quickly or more efficiently.

[0182] [Embodiment 6] According to embodiment 6, in embodiment 4 or 5, the method further includes obtaining marker information, which indicates whether a marker is exposed on the side surface, based on the imaging data obtained by the imaging, and polishing amount data, which indicates the amount of polishing on the side surface, based on the marker information. According to embodiment 6, by using the marker, it is possible to more accurately determine whether to end the polishing or change the polishing conditions.

[0183] [Embodiment 7] According to Embodiment 7, in any of Embodiments 1 to 6, the side surface polished in the polishing step extends along the stacking direction of the semiconductor chip. According to Embodiment 7, steps or distortions caused by the stacking of multiple semiconductor chips on the side surface can be reduced.

[0184] [Embodiment 8] According to Embodiment 8, a polishing apparatus is proposed, which polishes the sides of a stacked chip including a plurality of stacked semiconductor chips, and comprises a polishing head for holding the stacked chip, a retainer ring, a transport device for transporting the stacked chip, and a control device, wherein the control device controls the transport device to insert the stacked chip into the through-opening of the retainer ring, controls the polishing head to attach the retainer ring and the stacked chip to the polishing head with the stacked chip inserted into the through-opening, and polishes the sides of the stacked chip attached to the polishing head. According to Embodiment 8, the transport and attachment to the polishing head of stacked chips, which are generally small and difficult to handle, can be made easier. In addition, the stacked chip can be protected by the retainer ring during transport of the stacked chip.

[0185] [Embodiment 9] According to embodiment 9, in embodiment 8, the retainer ring comprises a first retainer surface on the side of the retainer ring that is attached to the polishing head, and a second retainer surface on the opposite side of the first retainer surface, the through opening penetrates from the first retainer surface to the second retainer surface, and the inner wall surface defining the through opening is chamfered on the side of the first retainer surface. According to embodiment 9, insertion of the laminated chip into the retainer ring can be facilitated.

[0186] [Embodiment 10] According to embodiment 10, a polishing method is proposed, which is a polishing method for polishing the sides of a stacked chip including a plurality of stacked semiconductor chips, and includes a first wet polishing step of wet polishing a first side of the stacked chip, a rotation step after the first wet polishing step in which the stacked chip is rotated while the stacked chip is wet and positioned on a support so as to be supported via a second side different from the first side, and a second wet polishing step of wet polishing a second side of the stacked chip that is different from the first side. According to embodiment 10, by performing the rotation step in a wet state, the adhesion of unwanted substances to the stacked chip is suppressed, and the plurality of sides of the stacked chip can be efficiently polished by reducing the amount of work such as cleaning.

[0187] [Embodiment 11] According to embodiment 11, embodiment 10 further includes a cleaning step performed between the first wet polishing step and the second wet polishing step to clean the laminated chip. According to embodiment 11, the second side surface can be polished more precisely.

[0188] [Embodiment 12] According to embodiment 12, in embodiment 11, the rotation of the stacked chip in the rotation process is performed while the cleaning is being carried out. According to embodiment 12, polishing of multiple sides of the stacked chip can be performed more efficiently.

[0189] [Embodiment 13] According to embodiment 13, in embodiment 12, during the cleaning process, the laminated chip is immersed in the liquid, and the rotation of the laminated chip in the rotation process is performed while the laminated chip is immersed in the liquid. According to embodiment 13, cleaning and orientation change can be performed efficiently and simultaneously without requiring complicated procedures.

[0190] [Embodiment 14] According to embodiment 14, in any of embodiments 10 to 13, the rotation of the laminated chip in the rotation process is performed while the sides of the laminated chip other than the first side are supported. According to embodiment 14, the possibility of adverse effects such as the adhesion of unwanted materials to the first side which has already been polished can be reduced.

[0191] [Embodiment 15] According to embodiment 15, in any of embodiments 10 to 14, the side surface of the stacked chip comprises a pair of chip surfaces facing each other in the stacking direction of the stacked chip, and four stacked side surfaces extending in the stacking direction and formed to surround a central axis extending in the stacking direction of the stacked chip, and the rotation of the stacked chip in the rotation process is performed while either or both of the pair of chip surfaces are supported. The stacked side surfaces may have irregularities or exposed adhesive layers, making them prone to the adhesion of unwanted materials, and embodiment 15 can reduce the possibility of adverse effects caused by the adhesion of such unwanted materials.

[0192] [Embodiment 16] According to embodiment 16, in any of embodiments 10 to 15, in the first wet polishing step, the first side surface of the laminated chip is wet polished with the retainer ring and the laminated chip inserted in the retainer ring attached to the polishing head, the method further includes removing the laminated chip and the retainer ring from the polishing head after the first wet polishing step, and in the rotation step, with the laminated chip inserted in the retainer ring, the laminated chip is inverted so that the second side surface opposite to the first side surface can be polished. According to embodiment 16, the laminated chip can be protected by the retainer ring even when changing orientation.

[0193] [Embodiment 17] According to embodiment 17, in embodiment 11, the stacked chip is cleaned while it is inserted into the retainer ring. According to embodiment 17, cleaning can be performed efficiently, and the stacked chip can be protected by the retainer ring during cleaning.

[0194] [Embodiment 18] According to embodiment 18, in any of embodiments 10 to 17, the side surface to be polished extends along the stacking direction of the stacked chips. According to embodiment 18, steps or distortions caused by the stacking of multiple semiconductor chips on the side surface can be reduced.

[0195] [Embodiment 19] According to embodiment 19, a polishing apparatus is proposed, which is a polishing apparatus for polishing the sides of a stacked chip including a plurality of stacked semiconductor chips, and comprises a polishing head for holding the stacked chip, a transport device for transporting the stacked chip, a posture changing device for rotating the stacked chip, and a control device, wherein the control device controls the polishing head to perform a first wet polishing step of wet polishing the first side of the stacked chip, and after the first wet polishing step, while the stacked chip is wet, controls the posture changing device to rotate the stacked chip, controls the posture changing device or the transport device to position the stacked chip on a support so that it is supported via a second side different from the first side, and after the rotation, controls the polishing head to perform a second wet polishing step of wet polishing the second side of the stacked chip which is different from the first side. According to embodiment 19, since the rotation of the stacked chip is performed while it is wet, the adhesion of unwanted substances to the stacked chip is suppressed, and the multiple sides of the stacked chip can be efficiently polished by reducing the amount of work such as cleaning.

[0196] [Embodiment 20] According to embodiment 20, a polishing method is proposed, which is a polishing method for polishing the side surface of a stacked chip including a plurality of stacked semiconductor chips, wherein the side surface extends along the stacking direction of the stacked chips, and the method includes a first polishing step of bringing the polishing tool into contact with the side surface of the stacked chip and supporting the stacked chip so that it faces a predetermined direction, while moving the polishing tool relative to the side surface along the side surface, and a second polishing step of polishing the side surface while rotating the stacked chip with respect to the polishing tool around an axis extending in a direction perpendicular to the side surface polished in the first polishing step. According to embodiment 20, the surface roughness of the surface to be polished can be reduced while polishing the stacked chip to a shape closer to a desired shape, such as making the surface to be polished flatter.

[0197] [Embodiment 21] According to embodiment 21, in embodiment 20, in the first polishing step, the polishing tool moves linearly relative to the laminated chip along one direction. According to embodiment 21, fluctuations in the moment generated in the laminated chip can be suppressed, and a flat polished surface can be achieved, or a laminated chip having a shape even closer to the desired shape can be achieved.

[0198] [Embodiment 22] According to embodiment 22, in embodiment 20 or 21, during or after the second polishing step, the side surface of the laminated chip is imaged, and at least one of the following is obtained: marker information indicating whether a marker is exposed on the polished surface, based on the image data obtained by the image; and polishing amount data indicating the amount of polishing of the polished surface, based on the marker information. According to embodiment 22, the amount of polishing can be adjusted more precisely toward the target amount of polishing.

[0199] [Embodiment 23] According to embodiment 23, a polishing apparatus is proposed, which is a polishing apparatus for polishing the side surface of a stacked chip including a plurality of stacked semiconductor chips, and comprises a polishing head for holding the stacked chip, a polishing tool support module for supporting a polishing tool, and a control device, wherein the side surface extends along the stacking direction of the stacked chip, and the control device is configured to perform a first polishing step in which the polishing tool is moved relative to the stacked chip along the side surface while controlling the polishing head and the polishing tool support module to bring the side surface of the stacked chip into contact with the polishing tool and supporting the stacked chip so that it faces a predetermined direction, and a second polishing step in which the polishing head and the polishing tool support module are controlled to polish the side surface while rotating the stacked chip relative to the polishing tool around an axis extending in a direction perpendicular to the side surface polished in the first polishing step. According to embodiment 23, the surface roughness of the surface to be polished can be reduced while polishing the stacked chip to a shape closer to the desired shape, such as making the surface to be polished flatter.

[0200] [Embodiment 24] According to embodiment 24, a polishing apparatus is proposed for polishing the sides of a stacked chip including a plurality of stacked semiconductor chips, and comprises a retainer ring and a polishing head for holding the stacked chip and the retainer ring, wherein the retainer ring has a through-opening into which the stacked chip is inserted, an inner wall surface defining the through-opening, and a supply port formed on the inner wall surface for supplying liquid to the through-opening. According to embodiment 24, the risk of damage to the stacked chip, such as scratches on the sides or chipping of the edges of the stacked chip due to contact between the retainer ring and the stacked chip can be reduced.

[0201] [Embodiment 25] According to embodiment 25, in embodiment 24, a fluid passage is further provided that is in fluid communication with the supply port of the retainer ring and passes through the inside of the retainer ring and the inside of the polishing head. According to embodiment 25, it is possible to more reliably supply liquid to the through-opening and to easily control the supply of liquid.

[0202] [Embodiment 26] According to embodiment 26, in embodiment 24 or 25, when the laminated chip is inserted into the retainer ring, a gap is formed between the laminated chip and the inner wall surface, and the supply port of the retainer ring is positioned to allow the liquid to be introduced into the gap. According to embodiment 26, the risk of damage to the laminated chip due to contact between the retainer ring and the laminated chip can be reduced more reliably.

[0203] [Embodiment 27] According to embodiment 27, in any of embodiments 24 to 26, the retainer ring is configured such that the liquid is held in the space defined by the laminated chip, the inner wall surface, and the polishing surface of the polishing tool when the side surface of the laminated chip is being polished. According to embodiment 27, the risk of damage to the laminated chip due to contact between the retainer ring and the laminated chip can be reduced more reliably.

[0204] [Embodiment 28] According to embodiment 28, in any of embodiments 24 to 27, the inner wall surface comprises a pair of first inner wall surfaces facing each other in the first direction, and the supply port is formed on each of the pair of first inner wall surfaces. According to embodiment 28, by introducing liquid from both sides of the laminated chip, it is possible to suppress the displacement of the laminated chip due to the pressure of the liquid.

[0205] [Embodiment 29] According to embodiment 29, in embodiment 28, the inner wall surface further comprises a pair of second inner wall surfaces facing each other in a second direction substantially perpendicular to the first direction, and the supply port is formed in each of the pair of second inner wall surfaces. According to embodiment 29, the liquid can be more reliably distributed around the entire circumference of the gap surrounding the laminated chip.

[0206] [Embodiment 30] According to embodiment 30, in any of embodiments 24 to 29, an outlet is further provided formed on the inner wall surface for discharging the liquid from the through-opening. According to embodiment 30, the amount of liquid can be controlled more flexibly, such as by replacing the liquid held between the laminated chip and the retainer ring.

[0207] [Embodiment 31] According to embodiment 31, in any of embodiments 24 to 30, a control device is further provided which is configured to supply liquid between the retainer ring and the laminated chip through the supply port while polishing is being performed. According to embodiment 31, the supply of liquid through the supply port of the retainer ring can be efficiently performed by controlling the control device.

[0208] [Embodiment 32] According to embodiment 32, a polishing method is proposed, which is a polishing method for polishing the sides of a stacked chip including a plurality of stacked semiconductor chips using a polishing device, wherein the polishing device comprises a retainer ring and a polishing head for holding the stacked chip and the retainer ring, and includes supplying liquid between the retainer ring and the stacked chip while polishing the sides. According to embodiment 32, the risk of damage to the stacked chip, such as scratches on the sides or chipping of the edges of the stacked chip due to contact between the retainer ring and the stacked chip can be reduced.

[0209] [Embodiment 33] According to embodiment 33, a polishing apparatus is proposed, which polishes the side surface of a stacked chip including a plurality of stacked semiconductor chips, and comprises a polishing head for holding the stacked chip and a control device for controlling the polishing head, wherein the polishing head comprises a chip mounting surface to which the stacked chip is attached, a head central axis extending perpendicular to the chip mounting surface, an actuator for applying force to the stacked chip and a moment measuring device for measuring the moment acting on the stacked chip, and the control device is configured to control the moment applied to the stacked chip by the actuator based on measurement data obtained by measurement by the moment measuring device. According to embodiment 33, more precise polishing of the stacked chip can be performed, and in particular the inclination of the surface to be polished or the amount of polishing of the edges of the surface to be polished can be adjusted.

[0210] [Embodiment 34] According to embodiment 34, in embodiment 33, the polishing head comprises a pressed member that rotates integrally with the laminated chip, and three or more actuators configured to press different pressing positions on the pressed member. According to embodiment 34, moments about axes extending in various directions parallel to the chip mounting surface can be applied to the laminated chip.

[0211] [Embodiment 35] According to embodiment 35, in embodiment 34, the three or more actuators are linear actuators including linear motion elements, the linear motion elements are configured to move along the head central axis, and the three or more actuators are arranged at different circumferential positions around the head central axis. According to embodiment 35, it is possible to apply more precisely to the laminated chip moments around axes extending in various directions parallel to the chip mounting surface.

[0212] [Embodiment 36] According to embodiment 36, in embodiment 34 or 35, the three or more actuators are configured to press on different pressing positions in the circumferential direction with respect to the head central axis on the side of the pressed member opposite to the side on which the laminated chip is located. According to embodiment 36, force can be transmitted more reliably from the actuators to the laminated chip via the pressed member.

[0213] [Embodiment 37] According to embodiment 37, in any of embodiments 34 to 36, when the axial and radial directions are set with respect to the head central axis, the ratio of the distance from the pressing position to the head central axis to the pressing position on the pressed member to which the actuator presses is 1 or less to the axial distance from the pressing position to the laminated chip. According to embodiment 37, the moment due to the force applied to the laminated chip in the direction along the polished surface can be reduced, making it easier to achieve more precise control.

[0214] [Embodiment 38] According to embodiment 38, in any of embodiments 34 to 37, a polishing amount measuring sensor is further provided, which is positioned radially outward from the pressing position with respect to the head central axis, for measuring the amount of polishing on the laminated chip. According to embodiment 38, the inclination of the laminated chip can be measured more precisely. In addition, if the moment can be controlled more precisely when the pressing actuator is radially inward, it can be easily positioned in a location where the pressing actuator can be controlled more precisely.

[0215] [Embodiment 39] According to embodiment 39, in embodiment 38, the polishing head comprises a plurality of polishing amount measuring sensors and a chip mounting member having a chip mounting surface, and each of the plurality of polishing amount measuring sensors is configured to detect the displacement of the chip mounting member at a detection position located radially outward from the pressing position with respect to the head central axis. According to embodiment 39, the inclination of the laminated chip can be measured more precisely.

[0216] [Embodiment 40] According to embodiment 40, in any of embodiments 33 to 39, the actuator is configured to apply force to the laminated chip via the moment measuring device and the chip mounting member. According to embodiment 40, it is possible to easily measure or control the moment.

[0217] [Embodiment 41] According to embodiment 41, in any of embodiments 33 to 40, the moment measuring device includes a plurality of load cells and at least one force sensor. According to embodiment 41, the moment acting on the stacked chip can be measured more reliably.

[0218] [Embodiment 42] According to embodiment 42, a polishing method is proposed, which is a polishing method for polishing the side surface of a stacked chip including a plurality of stacked semiconductor chips using a polishing apparatus, wherein the polishing apparatus comprises a polishing head for holding the stacked chip, the polishing head comprises an actuator for applying force to the stacked chip and a moment measuring device for measuring the moment acting on the stacked chip, and the method includes controlling the moment applied to the stacked chip by the actuator based on measurement data obtained by measurement by the moment measuring device. According to embodiment 42, more precise polishing of the stacked chip can be performed, and in particular, the inclination of the surface to be polished or the amount of polishing of the edges of the surface to be polished can be adjusted.

[0219] [Embodiment 43] According to embodiment 43, a polishing apparatus is proposed, which polishes the side surface of a stacked chip including a plurality of stacked semiconductor chips by bringing the side surface of the stacked chip into contact with a polishing tool, and comprises a polishing head for holding the stacked chip, a polishing tool support module for supporting the polishing tool, and a control device, wherein the polishing tool is sheet-shaped, has a sheet width in a first sheet direction, and has at least one transparent portion formed continuously or intermittently along a second sheet direction perpendicular to the first sheet direction and the thickness direction of the polishing tool, the polishing tool support module is configured to move the polishing tool along the second sheet direction, and includes an imaging device capable of imaging the side surface while the side surface is in contact with the transparent portion during polishing. According to embodiment 43, information on markers or polishing amount can be obtained without interrupting polishing or moving the polishing head to the imaging module, and polishing can be performed efficiently. In addition, since a new transparent portion can be supplied during polishing, adverse effects on imaging etc. due to dirt on the transparent portion can be prevented.

[0220] [Embodiment 44] According to embodiment 44, in embodiment 43, the control device controls the movement of the polishing head so that the side surface comes into contact with the transparent portion for at least a portion of the polishing period. According to embodiment 44, the polished surface can be imaged more reliably during polishing.

[0221] [Embodiment 45] According to embodiment 45, in embodiment 43 or 44, the polishing tool support module includes a polishing platen, and the polishing platen includes a platen window that defines the platen surface on which the polishing tool is placed. According to embodiment 45, it is possible to image the surface to be polished while the polishing tool is supported by the platen window.

[0222] [Embodiment 46] According to embodiment 46, in any of embodiments 43 to 45, the control device acquires at least one of the following: marker information indicating whether a marker is exposed on the side surface based on the imaging data obtained by imaging, and polishing amount data indicating the amount of polishing on the side surface based on the marker information. According to embodiment 46, it is possible to determine whether to continue polishing or to change the polishing conditions based on the marker or polishing amount information, without interrupting polishing or moving the polishing head to the imaging module or the like.

[0223] [Embodiment 47] According to embodiment 47, a polishing system is proposed, which comprises a polishing device according to any of embodiments 43 to 46 and the polishing tool. According to embodiment 47, imaging of the surface to be polished can be performed more quickly or more efficiently. Information on markers or the amount of polishing can be obtained without interrupting polishing or moving the polishing head to an imaging module, etc., and a polishing system that can be performed efficiently can be provided. In addition, since a new transparent portion can be supplied during polishing, adverse effects on imaging etc. due to dirt on the transparent portion can be prevented.

[0224] [Embodiment 48] According to embodiment 48, in embodiment 47, the polishing system further comprises a retainer ring configured to be held on the polishing head, the retainer ring having a through-opening into which the laminated chip is inserted, and the width of the transparent portion of the polishing tool in the first sheet direction is longer than the maximum diameter of the side of the laminated chip or the maximum diameter of the through-opening on the side of the retainer ring opposite to the side attached to the polishing head. According to embodiment 48, it is easier to simultaneously image the entire surface to be polished, and information about the marker or polishing amount can be obtained more precisely or more efficiently.

[0225] [Embodiment 49] According to embodiment 49, a polishing method is proposed, which is a polishing method that polishes the side surface of a stacked chip including a plurality of stacked semiconductor chips by bringing the side surface of the stacked chip into contact with a polishing tool, the polishing apparatus comprises a polishing head for holding the stacked chip and a polishing tool support module for supporting the polishing tool, the polishing tool is in the shape of a sheet and has a sheet width in a first sheet direction and has at least one transparent portion formed continuously or intermittently along a second sheet direction perpendicular to the first sheet direction and the thickness direction of the polishing tool, the polishing tool support module is configured to move the polishing tool along the second sheet direction, and the method includes taking an image of the side surface while the polishing is being performed and the side surface is in contact with the transparent portion. According to embodiment 49, information on markers or the amount of polishing can be obtained without interrupting the polishing or moving the polishing head to an imaging module, and polishing can be performed efficiently. In addition, since a new transparent portion can be supplied during polishing, adverse effects on imaging etc. due to dirt on the transparent portion can be prevented.

[0226] [Embodiment 50] According to embodiment 50, an imaging module is proposed for imaging the side surface of a stacked chip including a plurality of stacked semiconductor chips, and comprises a tank for holding liquid and an imaging device, wherein the tank comprises a bottom surface defining a space in which the liquid is held, an inner surface connected to the bottom surface and surrounding the space, a window defining at least a part of the bottom surface, and a positioning part for positioning a retainer ring into which the stacked chip is inserted so that the window and the side surface of the stacked chip overlap along the bottom surface, and the imaging device is configured to be positioned on the side opposite to the space with respect to the window. According to embodiment 50, the surface to be polished can be imaged without changing the orientation of the stacked chip, and the influence of the adhesion of unwanted substances to the surface to be polished on imaging can be reduced by using liquid.

[0227] [Embodiment 51] According to embodiment 51, in embodiment 50, the positioning portion includes a protrusion or recess that engages with the retainer ring. According to embodiment 51, imaging of markers on the polished surface can be performed more efficiently or more reliably.

[0228] [Embodiment 52] According to embodiment 52, in embodiment 50 or 51, the tank is provided with at least one liquid inlet for introducing the liquid into the space and a liquid outlet for discharging the liquid from the space. According to embodiment 52, unwanted substances such as particles present on the surface of the window can be removed. Furthermore, the introduction or discharge of liquid can be performed smoothly, and it becomes easier to control the introduction or discharge of liquid using a valve or the like.

[0229] [Embodiment 53] According to embodiment 53, a polishing apparatus is proposed, comprising a polishing head for holding the stacked chip and an imaging module of any of embodiments 50 to 52. According to embodiment 53, a polishing apparatus is provided that can image the surface to be polished without changing the orientation of the stacked chip, and can reduce the influence of the adhesion of unwanted substances to the surface to be polished on imaging by using a liquid.

[0230] [Embodiment 54] According to embodiment 54, embodiment 53 further includes a control device, the control device being configured to control the polishing head and to temporarily maintain a state in which the side surface of the laminated chip is immersed in the liquid so that the side surface does not come into contact with the bottom surface. According to embodiment 54, the removal of unwanted materials such as particles present on the surface of the window can be facilitated by the movement or flow of the liquid.

[0231] [Embodiment 55] According to embodiment 55, in embodiment 54, the imaging module is provided with at least one liquid inlet for introducing the liquid into the space and a liquid outlet for discharging the liquid from the space, and the control device is configured to control the introduction of the liquid into the space or the discharge of the liquid from the space in the state in which the side surface is immersed in the liquid, thereby generating a flow in the tank. According to embodiment 55, the generated flow can further promote the removal of unwanted substances such as particles present on the surface of the window.

[0232] [Embodiment 56] According to embodiment 56, in embodiment 54 or 55, the control device acquires at least one of the following: marker information, which indicates whether a marker is exposed on the side surface, based on imaging data obtained by imaging the side surface of the stacked chip arranged to overlap with the window; and polishing amount data, which indicates the amount of polishing of the surface to be polished, based on the marker information. According to embodiment 56, it is possible to determine whether or not to continue polishing, or to change the polishing conditions, etc., based on the marker or polishing amount information.

[0233] [Embodiment 57] According to embodiment 57, an imaging method is proposed, which is an imaging method for imaging the side surface of a stacked chip including a plurality of stacked semiconductor chips, and includes arranging the stacked chip and retainer ring in a tank holding a liquid, wherein the tank comprises a bottom surface defining a space in which the liquid is held, an inner surface connected to the bottom wall and surrounding the space, a window defining at least a part of the bottom surface, and a positioning part for positioning the retainer ring into which the stacked chip is inserted so that the window and the side surface of the stacked chip overlap along the bottom surface, and imaging the side surface with an imaging device positioned on the opposite side of the space from the window. According to embodiment 57, the surface to be polished can be imaged without changing the orientation of the stacked chip, and the influence of the adhesion of unwanted substances to the surface to be polished on the imaging can be reduced by using a liquid.

[0234] [Embodiment 58] According to embodiment 58, a polishing method is proposed, which includes polishing the side surface of a stacked chip including a plurality of stacked semiconductor chips, and imaging the side surface using the imaging method of embodiment 57. According to embodiment 58, information such as markers or polishing amount can be obtained more efficiently or precisely, and polishing can be performed more efficiently or precisely.

[0235] Although several embodiments of the present invention have been described above, the embodiments described above are for the purpose of facilitating understanding of the present invention and do not limit it. The present invention can be modified and improved without departing from its spirit, and of course, equivalents thereof are included in the present invention. Furthermore, any combination or omission of the components described in the claims and specification is possible to the extent that at least some of the above-mentioned problems can be solved or at least some of the effects can be achieved.

[0236] This application claims priority under Japanese Patent Application No. 2025-051357, filed on 26 March 2025. All disclosures of Japanese Patent Application No. 2025-051357, including the specification, claims, drawings, and abstract, are incorporated herein by reference. All disclosures of International Publication No. 2024 / 135670 (Patent Document 1), including the specification, claims, drawings, and abstract, are incorporated herein by reference.

[0237] 2, 2A Polishing module 7 Side of stacked chip 8 Through opening 20 Transfer device 30 Retainer ring support base 40, 40A Polishing head 50, 50A, 50B Orientation change module 51, 51A Orientation change device 55 Support body 60 Imaging module 61 Tank 70 Stacked chip 71, 71A, 71B Chip surface 72, 72A, 72B, 72C, 72D Stacked side surface 73 Semiconductor chip 74 Adhesive layer 80, 80A, 80B Retainer ring 82 Chamfered part 83 Inner wall surface 85, 85A, 85B First retainer side positioning part 86, 86A, 86B Second retainer side positioning part 100, 100A Polishing tool 102 Transparent part 110 Polishing surface 200, 200A Polishing tool support module 210, 210A Polishing platen 211 Platen window 212 Platen surface 250, 621 Imaging device 410 Chip mounting member 420 Moment measuring device 430 Pressed member 431 Pressing position 450 Pressing actuator 460 Polishing amount measuring sensor 461 Detection position 475 First head side flow path 481 Chip mounting surface 482 Retainer ring mounting surface 611 Tank bottom surface 612 Inner surface of layer 614 Window 615 Tank side positioning part 618 Liquid inlet 619 Liquid outlet 700 Surface to be polished 701 First side surface 702 Second side surface 740 Marker 815 First retainer side flow path 831, 831A, 831B First inner wall surface 832, 832A, 832B Second inner wall surface 835 Supply port 836 Discharge port 900 Control device 1000, 1000A Polishing device 1100, 1100A Polishing system AX Head central axis AXC1 Central axis of laminated chip AXC2 Central axis of retainer ring AXR Head rotation axis CL1 Gap D1 First distance D2 Second distance LD1, LD2, LD3 Liquid LM1 Maximum diameter of through opening LM2 Maximum diameter of chip M1 Moment S10 First retainer surface S20 Second retainer surface SP1 Space W1 Sheet width W2 Width of transparent portion

Claims

1. A polishing method for polishing the side surface of a stacked semiconductor chip, comprising: an insertion step of inserting the stacked chip into a through-opening of a retainer ring; an attachment step of attaching the retainer ring and the stacked chip to a polishing head while the stacked chip is inserted into the through-opening; and a polishing step of polishing the side surface of the stacked chip attached to the polishing head.

2. The polishing method according to claim 1, wherein the retainer ring comprises a first retainer surface on the side of the retainer ring to which the polishing head is attached, a second retainer surface on the opposite side of the first retainer surface, and an inner wall surface defining the through opening, the through opening extending from the first retainer surface to the second retainer surface, the inner wall surface being chamfered on the side facing the first retainer surface, and in the insertion step, the laminated chip is inserted into the through opening from the side facing the first retainer surface of the retainer ring.

3. The polishing method according to claim 1 or 2, wherein the retainer ring further comprises a pair of first inner wall surfaces facing each other in a first direction and a pair of second inner wall surfaces facing each other in a second direction substantially perpendicular to the first direction, the pair of first inner wall surfaces and the pair of second inner wall surfaces are planar and define the through opening.

4. The polishing method according to claim 1 or 2, further comprising imaging the side surface of the stacked chip with the retainer ring and the stacked chip removed from the polishing head.

5. The polishing method according to claim 1 or 2, further comprising imaging the side surface of the stacked chip while the retainer ring and the stacked chip are attached to the polishing head.

6. The polishing method according to claim 4, further comprising obtaining marker information indicating whether a marker is exposed on the side surface based on imaging data obtained by the imaging, and polishing amount data indicating the amount of polishing of the side surface based on the marker information.

7. The polishing method according to claim 1 or 2, wherein the side surface polished in the polishing step extends along the stacking direction of the semiconductor chip.

8. A polishing apparatus for polishing the sides of a stacked chip, which includes a plurality of stacked semiconductor chips, comprising: a polishing head for holding the stacked chip; a retainer ring; a transport device for transporting the stacked chip; and a control device, wherein the control device controls the transport device to insert the stacked chip into a through-opening in the retainer ring; and controls the polishing head to attach the retainer ring and the stacked chip to the polishing head with the stacked chip inserted into the through-opening, and polishes the sides of the stacked chip attached to the polishing head.

9. The polishing apparatus according to claim 8, wherein the retainer ring comprises a first retainer surface on the side of the retainer ring that is attached to the polishing head, and a second retainer surface on the opposite side of the first retainer surface, the through opening penetrates from the first retainer surface to the second retainer surface, and the inner wall surface defining the through opening is chamfered on the side of the first retainer surface.

10. A polishing method for polishing the side surface of a stacked chip comprising a plurality of stacked semiconductor chips, comprising: a first wet polishing step of wet polishing a first side surface of the stacked chip; a rotation step, after the first wet polishing step, of rotating the stacked chip while it is wet, so that the stacked chip is supported on a support via a second side surface different from the first side surface; and a second wet polishing step of wet polishing a second side surface of the stacked chip that is different from the first side surface.

11. The polishing method according to claim 10, further comprising a cleaning step of cleaning the laminated chip, which is performed between the first wet polishing step and the second wet polishing step.

12. The polishing method according to claim 11, wherein the rotation of the stacked chip in the rotation step is performed while the cleaning is being carried out.

13. The polishing method according to claim 12, wherein in the cleaning step, the laminated chip is immersed in a liquid, and the rotation of the laminated chip in the rotation step is performed while the laminated chip is immersed in the liquid.

14. The polishing method according to any one of claims 10 to 13, wherein the rotation of the laminated chip in the rotation step is performed while the sides of the laminated chip other than the first side are supported.

15. The polishing method according to any one of claims 10 to 13, wherein the side surface of the stacked chip comprises a pair of chip surfaces facing each other in the stacking direction of the stacked chip, and four stacked side surfaces extending in the stacking direction and formed to surround a central axis of the stacked chip extending in the stacking direction, and the rotation of the stacked chip in the rotation step is performed while either or both of the pair of chip surfaces are supported.

16. The polishing method according to any one of claims 10 to 13, wherein in the first wet polishing step, the first side surface of the laminated chip is wet polished with the retainer ring and the laminated chip inserted in the retainer ring attached to the polishing head, the polishing method further comprises removing the laminated chip and the retainer ring from the polishing head after the first wet polishing step, and in the rotation step, the laminated chip is inverted with the laminated chip inserted in the retainer ring so that the second side surface opposite to the first side surface can be polished.

17. The polishing method according to claim 11, wherein the stacked chip is cleaned while the stacked chip is inserted into the retainer ring.

18. The polishing method according to any one of claims 10 to 13, wherein the side surface to be polished extends along the stacking direction of the stacked chip.

19. A polishing apparatus for polishing the sides of a stacked chip, which includes a plurality of stacked semiconductor chips, comprising: a polishing head for holding the stacked chip; a transport device for transporting the stacked chip; a posture changing device for rotating the stacked chip; and a control device, wherein the control device is configured to: control the polishing head and perform a first wet polishing step of wet polishing the first side of the stacked chip; after the first wet polishing step, while the stacked chip is wet, control the posture changing device to rotate the stacked chip, control the posture changing device or the transport device to position the stacked chip on a support so that it is supported via a second side different from the first side; and after the rotation, control the polishing head and perform a second wet polishing step of wet polishing the second side of the stacked chip, which is different from the first side.

20. A polishing method for polishing the side surface of a stacked chip comprising a plurality of stacked semiconductor chips, wherein the side surface extends along the stacking direction of the stacked chips, and the polishing method comprises: a first polishing step of bringing the polishing tool into contact with the side surface of the stacked chip and supporting the stacked chip so that it faces a predetermined direction, while moving the polishing tool relative to the side surface along the side surface; and a second polishing step of polishing the side surface while rotating the stacked chip with respect to the polishing tool about an axis extending in a direction perpendicular to the side surface polished in the first polishing step.

21. The polishing method according to claim 20, wherein in the first polishing step, the polishing tool moves linearly relative to the laminated chip along one direction.

22. The polishing method according to claim 20 or 21, further comprising: imaging the side surface of the laminated chip during or after the second polishing step; obtaining marker information, based on the imaging data obtained by the imaging, regarding whether a marker is exposed on the surface to be polished; and obtaining at least one of polishing amount data, based on the marker information, indicating the amount of polishing of the surface to be polished.

23. A polishing apparatus for polishing the side surface of a stacked chip comprising a plurality of stacked semiconductor chips, the apparatus comprising: a polishing head for holding the stacked chip; a polishing tool support module for supporting a polishing tool; and a control device, wherein the side surface extends along the stacking direction of the stacked chip, and the control device is configured to perform a first polishing step of controlling the polishing head and the polishing tool support module to bring the side surface of the stacked chip into contact with the polishing tool, and supporting the stacked chip so that it faces a predetermined direction, while moving the polishing tool relative to the stacked chip along the side surface; and a second polishing step of controlling the polishing head and the polishing tool support module to polish the side surface while rotating the stacked chip relative to the polishing tool around an axis extending in a direction perpendicular to the side surface polished in the first polishing step.

24. Polishing apparatus for polishing the sides of a stacked chip including a plurality of stacked semiconductor chips, comprising: a retainer ring; a polishing head for holding the stacked chip and the retainer ring, wherein the retainer ring comprises a through-opening into which the stacked chip is inserted; an inner wall surface defining the through-opening; and a supply port formed on the inner wall surface for supplying liquid to the through-opening.

25. The polishing apparatus according to claim 24, further comprising a fluid channel connected to the supply port of the retaining ring and passing through the inside of the retaining ring and the inside of the polishing head.

26. The polishing apparatus according to claim 24 or 25, wherein when the laminated chip is inserted into the retainer ring, a gap is formed between the laminated chip and the inner wall surface, and the supply port of the retainer ring is positioned to allow the liquid to be introduced into the gap.

27. The polishing apparatus according to claim 24 or 25, wherein the retainer ring is configured to hold the liquid in a space defined by the laminated chip, the inner wall surface, and the polishing surface of the polishing tool when the side surface of the laminated chip is being polished.

28. The polishing apparatus according to claim 24 or 25, wherein the inner wall surface comprises a pair of first inner wall surfaces facing each other in a first direction, and the supply port is formed in each of the pair of first inner wall surfaces.

29. The polishing apparatus according to claim 28, wherein the inner wall surface further comprises a pair of second inner wall surfaces facing each other in a second direction substantially perpendicular to the first direction, and the supply port is formed in each of the pair of second inner wall surfaces.

30. The polishing apparatus according to claim 24 or 25, further comprising an outlet formed on the inner wall surface for discharging the liquid from the through-opening.

31. The polishing apparatus according to claim 24 or 25, further comprising a control device configured to supply liquid between the retainer ring and the laminated chip via the supply port while the side surface is being polished.

32. A polishing method for polishing the sides of a stacked chip, which includes a plurality of stacked semiconductor chips, using a polishing apparatus, wherein the polishing apparatus comprises a retainer ring and a polishing head for holding the stacked chip and the retainer ring, and the polishing method includes supplying a liquid between the retainer ring and the stacked chip while polishing the sides.

33. A polishing apparatus for polishing the side surface of a stacked chip including a plurality of stacked semiconductor chips, comprising: a polishing head for holding the stacked chip; and a control device for controlling the polishing head, wherein the polishing head comprises: a chip mounting surface on which the stacked chip is attached; a head central axis extending perpendicular to the chip mounting surface; an actuator for applying force to the stacked chip; and a moment measuring device for measuring the moment acting on the stacked chip, and the control device is configured to control the moment applied to the stacked chip by the actuator based on measurement data obtained by the moment measuring device.

34. The polishing apparatus according to claim 33, wherein the polishing head comprises a pressed member that rotates integrally with the laminated chip, and three or more actuators configured to press different pressing positions on the pressed member.

35. The polishing apparatus according to claim 34, wherein the three or more actuators are linear actuators including linear elements that move in a straight line, the linear elements are configured to move along the head central axis, and the three or more actuators are arranged at different circumferential positions around the head central axis.

36. The polishing apparatus according to claim 34 or 35, wherein the three or more actuators are configured to press on different pressing positions in the circumferential direction with respect to the head central axis on the side of the pressed member opposite to the side on which the laminated chip is located.

37. The polishing apparatus according to claim 34 or 35, wherein, when the axial and radial directions are set with respect to the head central axis, the ratio of the distance from the pressing position to the head central axis to the pressing member pressed by the actuator to the axial distance from the pressing position to the laminated chip is 1 or less.

38. The polishing apparatus according to claim 34 or 35, further comprising a polishing amount measuring sensor positioned radially outward from the pressing position with respect to the head central axis, for measuring the amount of polishing in the laminated chip.

39. The polishing apparatus according to claim 38, wherein the polishing head comprises a plurality of polishing amount measuring sensors and a tip mounting member having a tip mounting surface, and each of the plurality of polishing amount measuring sensors is configured to detect the displacement of the tip mounting member at a detection position located radially outward from the pressing position with respect to the head central axis.

40. The polishing apparatus according to any one of claims 33 to 35, wherein the actuator is configured to apply force to the laminated chip via the moment measuring device and the chip mounting member.

41. The polishing apparatus according to any one of claims 33 to 35, wherein the moment measuring device includes a plurality of load cells and at least one force sensor.

42. A polishing method for polishing the side surface of a stacked chip, which includes a plurality of stacked semiconductor chips, using a polishing apparatus, wherein the polishing apparatus comprises a polishing head for holding the stacked chip, the polishing head comprises an actuator for applying force to the stacked chip, and a moment measuring device for measuring the moment acting on the stacked chip, and the polishing method comprises controlling the moment applied to the stacked chip by the actuator based on measurement data obtained by measurement by the moment measuring device.

43. A polishing apparatus for polishing the side surface of a stacked chip, which includes a plurality of stacked semiconductor chips, by bringing the side surface of the stacked chip into contact with a polishing tool, comprising: a polishing head for holding the stacked chip; a polishing tool support module for supporting the polishing tool; and a control device, wherein the polishing tool is in the shape of a sheet, has a sheet width in a first sheet direction, and has at least one transparent portion formed continuously or intermittently along a second sheet direction perpendicular to the first sheet direction and the thickness direction of the polishing tool; the polishing tool support module is configured to move the polishing tool along the second sheet direction; and the polishing apparatus comprises an imaging device capable of imaging the side surface while the side surface is in contact with the transparent portion during polishing.

44. The polishing apparatus according to claim 43, wherein the control device controls the movement of the polishing head so that the side surface contacts the transparent portion for at least a portion of the polishing period.

45. The polishing apparatus according to claim 43 or 44, wherein the polishing tool support module comprises a polishing platen, and the polishing platen comprises a platen window that defines the platen surface on which the polishing tool is placed.

46. ​​The polishing apparatus according to claim 43 or 44, wherein the control device acquires at least one of marker information indicating whether a marker is exposed on the side surface based on imaging data obtained by imaging, and polishing amount data indicating the amount of polishing of the side surface based on the marker information.

47. A polishing system comprising the polishing apparatus according to claim 43 or 44 and the polishing tool.

48. The polishing system according to claim 47, further comprising a retainer ring configured to be held on the polishing head, the retainer ring having a through-opening into which the laminated chip is inserted, and the width of the transparent portion of the polishing tool in the first sheet direction is longer than the maximum diameter of the side of the laminated chip or the maximum diameter of the through-opening on the side of the retainer ring opposite to the side attached to the polishing head.

49. A polishing method for polishing a side surface of a stacked chip, which includes a plurality of stacked semiconductor chips, by bringing the side surface of the stacked chip into contact with a polishing tool using a polishing apparatus, wherein the polishing apparatus comprises a polishing head for holding the stacked chip and a polishing tool support module for supporting the polishing tool, the polishing tool is in the shape of a sheet, has a sheet width in a first sheet direction, and has at least one transparent portion formed continuously or intermittently along a second sheet direction perpendicular to the first sheet direction and the thickness direction of the polishing tool, the polishing tool support module is configured to move the polishing tool along the second sheet direction, and the polishing method comprises imaging the side surface while the side surface is in contact with the transparent portion during the polishing.

50. An imaging module for imaging the side surface of a stacked chip comprising a plurality of stacked semiconductor chips, comprising: a tank for holding a liquid; and an imaging device, wherein the tank comprises: a bottom surface defining a space in which the liquid is held; an inner surface connected to the bottom surface and surrounding the space; a window defining at least a portion of the bottom surface; and a positioning portion for positioning a retainer ring into which the stacked chip is inserted, such that the window and the side surface of the stacked chip overlap along the bottom surface, and the imaging device is configured to be positioned on the side opposite to the space with respect to the window.

51. The imaging module according to claim 50, wherein the positioning portion comprises a convex or concave portion that engages with the retainer ring.

52. The imaging module according to claim 50 or 51, wherein the tank comprises at least one liquid inlet for introducing the liquid into the space and a liquid outlet for discharging the liquid from the space.

53. A polishing apparatus comprising a polishing head for holding the stacked chip and an imaging module according to claim 50 or 51.

54. The polishing apparatus according to claim 53, further comprising a control device, the control device being configured to control the polishing head and to temporarily maintain a state in which the side surface of the laminated chip is immersed in the liquid so that the side surface of the laminated chip does not come into contact with the bottom surface.

55. The polishing apparatus according to claim 54, wherein the imaging module comprises at least one liquid inlet for introducing the liquid into the space and a liquid outlet for discharging the liquid from the space, and the control device is configured to control the introduction of the liquid into the space or the discharge of the liquid from the space, while the side surface is immersed in the liquid, thereby generating a flow in the tank.

56. The polishing apparatus according to claim 54, wherein the control device acquires at least one of the following: marker information indicating whether a marker is exposed on the side surface, based on imaging data obtained by imaging the side surface of the stacked chip arranged to overlap with the window; and polishing amount data indicating the amount of polishing of the surface to be polished, based on the marker information.

57. An imaging method for imaging the side surface of a stacked chip, which includes a plurality of stacked semiconductor chips, comprising: arranging the stacked chip and a retainer ring in a tank holding a liquid, wherein the tank comprises: a bottom surface defining a space in which the liquid is held; an inner surface connected to the bottom wall and surrounding the space; a window defining at least a portion of the bottom surface; and a positioning section for positioning the retainer ring into which the stacked chip is inserted, such that the window and the side surface of the stacked chip overlap along the bottom surface; and imaging the side surface with an imaging device positioned on the opposite side of the space from the window.

58. A polishing method comprising polishing the side surface of a stacked chip including a plurality of stacked semiconductor chips, and imaging the side surface using the imaging method of claim 57.

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