Parameter adjustment method, parameter adjustment system, adjustment device, and parameter adjustment program

Abstract

Provided are a parameter adjustment method, a parameter adjustment system, an adjustment device, and a parameter adjustment program with which a more appropriate parameter can be set in a wafer test system.　A parameter adjustment method for a wafer test system comprises the following processes: acquiring, from each first wafer test system constituting a plurality of wafer test systems, a temperature characteristic in which a pre-adjustment first parameter before adjustment and a post-adjustment first parameter after adjustment when a parameter required for testing a wafer is adjusted are associated with a temperature change of a wafer chuck during adjustment; selecting, on the basis of a plurality of temperature characteristics acquired, a second parameter from a plurality of post-adjustment first parameters; and setting the second parameter in a second wafer test system different from the first wafer test systems.

Description

Parameter adjustment method, parameter adjustment system, adjustment apparatus, and parameter adjustment program

[0001] The present disclosure relates to a parameter adjustment method, a parameter adjustment system, an adjustment apparatus, and a parameter adjustment program.

[0002] In a wafer test system for testing wafers, various parameters related to temperature adjustment are adjusted during testing. Since optimal values may differ depending on various devices included in the wafer test system, devices formed on the wafer, and the like, it is desired to adjust parameters for each wafer test system.

[0003] However, manually adjusting parameters to optimal values for each wafer test system increases the number of work steps. Therefore, for example, Patent Documents 1 and 2 disclose techniques for adjusting parameters.

[0004] Japanese Patent Application Laid-Open No. 2009-301392 Japanese Patent Application Laid-Open No. 2009-223357

[0005] However, Patent Documents 1 and 2 disclose a technique for setting parameters used in PID (Proportional-Integral-Derivative Control) control during temperature control. However, there still remains room for improvement in order to automatically set more appropriate temperature control parameters.

[0006] An object of the present disclosure is to provide a parameter adjustment method, a parameter adjustment system, an adjustment apparatus, and a parameter adjustment program that can set more appropriate parameters for a wafer test system.

[0007] To achieve the above objective, the parameter adjustment method of the present disclosure is a parameter adjustment method for a wafer test system having at least a wafer chuck for holding a wafer and a prober having a temperature controller for adjusting the temperature of the wafer chuck, and includes the process of obtaining temperature characteristics associated with the temperature change of the wafer chuck during adjustment when the parameters required for testing the wafer are adjusted from each of the first wafer test systems, which is a plurality of wafer test systems, a first wafer test system, a plurality of wafer test systems, a first parameter before adjustment and a first parameter after adjustment, a first parameter after adjustment, and a second parameter selected from the plurality of first parameters after adjustment based on the obtained plurality of temperature characteristics, and setting the second parameter in a second wafer test system different from the first wafer test system.

[0008] To achieve the above objective, the parameter adjustment system of the present disclosure is a parameter adjustment system for adjusting parameters of a wafer test system having at least a wafer chuck for holding a wafer and a prober having a temperature controller for adjusting the temperature of the wafer chuck, and comprises a plurality of first wafer test systems, a second wafer test system different from the first wafer test system, and an adjustment device including an acquisition unit that acquires temperature characteristics associated with a first parameter before adjustment and a first parameter after adjustment when the parameters required for testing the wafer are adjusted from each of the plurality of first wafer test systems, and the temperature change of the wafer chuck during adjustment, a selection unit that selects a second parameter from a plurality of the first parameters after adjustment based on the acquired plurality of temperature characteristics, and a setting unit that sets the second parameter in the second wafer test system.

[0009] To achieve the above objective, the adjustment device of the present disclosure is an adjustment device used for adjusting parameters of a wafer test system having at least a wafer chuck for holding a wafer and a prober having a temperature controller for adjusting the temperature of the wafer chuck, and includes: an acquisition unit that acquires temperature characteristics associated with the temperature change of the wafer chuck when the parameters required for testing the wafer are adjusted from each of a plurality of wafer test systems, which is a first wafer test system; a selection unit that selects a second parameter from a plurality of the first adjusted parameters based on the acquired plurality of temperature characteristics; and a setting unit that sets the second parameter to a second wafer test system different from the first wafer test system.

[0010] To achieve the above objective, the parameter adjustment program of this disclosure is a parameter adjustment program for causing a computer to perform parameter adjustment processing for a wafer test system having at least a wafer chuck for holding a wafer and a prober having a temperature controller for adjusting the temperature of the wafer chuck, and the program acquires temperature characteristics that associate the first parameter before adjustment and the first parameter after adjustment, when the parameters required for testing the wafer are adjusted from each of the first wafer test systems, which is a plurality of wafer test systems, with the temperature change of the wafer chuck during adjustment, and based on the plurality of acquired temperature characteristics, a second parameter is selected from the plurality of first parameters after adjustment, and the computer is caused to perform processing to set the second parameter in a second wafer test system different from the first wafer test system.

[0011] According to this disclosure, more appropriate parameters can be set for the wafer testing system.

[0012] This is a schematic diagram showing an example of the overall configuration of the wafer test system of the embodiment. This is a schematic diagram showing an example of the overall configuration of the parameter adjustment system of the embodiment. This is a block diagram showing an example of the configuration of the control device of the embodiment. This is an example of the functional configuration of the control device of the embodiment. This is a block diagram showing an example of the configuration of the adjustment device of the embodiment. This is an example of the functional configuration of the adjustment device of the embodiment. This is a graph illustrating the temperature change of the wafer chuck.

[0013] The embodiments of this disclosure will be described in detail below with reference to the drawings. It should be noted that these embodiments are not intended to limit the technology of this disclosure, and the configuration and operation are merely examples; they can be modified as needed without departing from the spirit of the present invention.

[0014] The parameter adjustment system of this embodiment adjusts the temperature control parameters (hereinafter referred to as "temperature control parameters") of the wafer test system.

[0015] First, the wafer test system, which is the controlled object of the wafer test system in this embodiment, will be described. Figure 1 is a schematic diagram showing an example of the overall configuration of the wafer test system 1. In the following description, an XYZ Cartesian coordinate system will be used, in which the plane parallel to the wafer chuck 18 is the XY plane.

[0016] As shown in Figure 1, the wafer test system 1 comprises a prober 10, a tester 30, a chiller 40, and a control device 50.

[0017] The prober 10 brings the probe 25 into contact with the electrodes of each chip on the wafer W. As shown in Figure 1, the prober 10 of this embodiment has a housing 12, a wafer moving mechanism 14, a wafer chuck 18, and a probe card 24. The wafer moving mechanism 14 and the wafer chuck 18 are provided in the housing 12.

[0018] The wafer moving mechanism 14 is mounted on the base 12B of the housing 12 and has a moving mechanism that moves the wafer chuck 18 in each of the three axes of X, Y, and Z, and a rotation mechanism that rotates around the Z axis. Since known technology can be applied to the wafer moving mechanism 14, a detailed explanation is omitted here.

[0019] The upper surface of the wafer chuck 18 is provided with a holding surface 18A for holding a wafer W. As an example, in this embodiment, the wafer chuck 18 holds the wafer W on the holding surface 18A by vacuum suction. The wafer W held by the wafer chuck 18 may be a single wafer or may have multiple chips formed on it.

[0020] The wafer chuck 18 is made of a material such as aluminum, copper, or ceramic with good thermal conductivity.

[0021] Furthermore, a temperature control plate 20 is provided inside the wafer chuck 18 as a heating or cooling source for heating or cooling the wafer W. Various types of temperature control plates 20 can be applied, such as a combination of a heater and a cooling plate, a combination of a Peltier element and a cooling plate, a double-layer structure with a heating layer of a surface heater and a cooling layer with passages for a cooling fluid, or a single-layer structure with a cooling pipe embedded in a heat conductor with a heating heater wrapped around it. The chiller 40, which is a cooling mechanism, is used to cool the wafer chuck 18. Note that, unlike this embodiment, the chiller 40 is unnecessary if the wafer chuck 18 is not to be cooled.

[0022] The wafer chuck 18 is mounted on the wafer moving mechanism 14. The wafer chuck 18 is movable in three axial directions (X-axis, Y-axis, and Z-axis direction) by the wafer moving mechanism 14, and is also rotatable in the rotational direction about the Z-axis.

[0023] A probe card 24 is positioned above the holding surface 18A of the wafer chuck 18. The probe card 24 is detachably attached to the opening in the top plate 12A of the housing 12.

[0024] The probe card 24 is equipped with probes 25. The probes 25 are positioned according to the electrode arrangement of the chip to be tested and are replaced depending on the chip being tested.

[0025] The tester 30 comprises a tester body 31 and an interface 32 provided on the tester body 31. The tester body 31 is held relative to the prober 10 by a support mechanism (not shown). The interface 32 electrically connects the terminals of the tester body 31 to the terminals of the probe card 24. The tester 30 supplies power and various test signals from the terminals of the probe card 24 to the chip on the wafer W and verifies whether the chip is functioning correctly by analyzing the signals output to the electrodes of the chip.

[0026] The control device 50 controls the operation of the entire prober 10. It also adjusts the temperature control parameters in the wafer test system 1. The adjustment of the temperature control parameters of the wafer test system 1 by the control device 50 will be described in detail later.

[0027] Next, the parameter adjustment system 2 of this embodiment will be described. Figure 2 is a schematic diagram showing an example of the overall configuration of the parameter adjustment system 2 of this embodiment. Note that in Figure 2, only the configuration required for adjusting the temperature control parameters of the wafer test system 1 (1_1 to 1_3), etc., is shown, and other configurations are omitted.

[0028] In the parameter adjustment system 2 of this embodiment shown in Figure 2, the adjustment device 60 sets the temperature control parameters of wafer test system 1_3 based on the adjustment results of the temperature control parameters in wafer test systems 1_1 and 1_2. As an example, in the parameter adjustment system 2 of this embodiment, wafer test systems 1_1 to 1_3 have the same configuration. Therefore, when referring to each of wafer test systems 1_1 to 1_3 collectively without distinguishing the parts they each possess, the reference numerals 1 to 3 indicating each individual are omitted. In this embodiment, wafer test systems 1_1 and 1_2 are examples of the first wafer test system of this disclosure. Also, wafer test system 1_3 of this embodiment is an example of the second wafer test system of this disclosure.

[0029] The control device 50 of the wafer test system 1 sets the temperature control parameters for the wafer chuck 18 and temperature control plate 20 of the prober 10. The control device 50 also sets the temperature control parameters for the chiller 40.

[0030] Figure 3 is a block diagram showing an example of the configuration of the control device 50 of this embodiment. As shown in Figure 3, the control device 50 of this embodiment includes a CPU (Central Processing Unit) 51, a ROM (Read Only Memory) 52, a RAM (Random Access Memory) 53, storage 54, an operation unit 56, a display unit 57, and a communication I / F (Interface) 58. The CPU 51, ROM 52, RAM 53, storage 54, operation unit 56, display unit 57, and communication I / F 58 are connected to each other via a bus 59 such as a system bus or a control bus, enabling the exchange of various types of information.

[0031] The CPU 51 is a central processing unit that executes various programs, such as the program 55 stored in the storage 54, and controls various parts. The ROM 52 stores various programs and various data. The RAM 53 temporarily stores programs or data as a working area. The storage 54 is composed of a storage device such as an HDD (Hard Disk Drive), SSD (Solid State Drive), or flash memory, and stores various programs, such as the control program 55, and various data. The control program 55 may be a single program or may contain multiple programs.

[0032] The operation unit 56 is used by the user to input various information and instructions. The operation unit 56 is not particularly limited and may include, for example, various switches, a touch panel, a stylus, a mouse, and a microphone for voice input. The display unit 57 displays the results of wafer temperature derivation and various test results. The operation unit 56 and the display unit 57 may be integrated to form a touch panel display.

[0033] The communication interface 58 is an interface for connecting the control device 50 and the adjustment device 60, etc. The communication interface 58 can use, for example, wired communication standards such as Ethernet (registered trademark) or FDDI (Fiber Distributed Data Interface), or wireless communication standards such as 4G, 5G, or Wi-Fi (registered trademark).

[0034] Figure 4 shows an example of the functional configuration of the control device 50. As shown in Figure 4, the control device 50 includes an adjustment unit 80, a temperature characteristic generation unit 82, and an output unit 84. The CPU 51 executes a control program 55, thereby enabling the adjustment unit 80, the temperature characteristic generation unit 82, and the output unit 84 to function.

[0035] The adjustment unit 80 adjusts the temperature control parameters. In the parameter adjustment system 2 of this embodiment, in the case of the control device 50 provided in the wafer test systems 1_1 and 1_2, the adjustment unit 80 controls the wafer test system 1 using preset reference temperature control parameters and measures the temperature of the wafer chuck 18. The temperature control parameters are automatically adjusted based on the behavior of the chuck temperature at that time. Specifically, the adjustment unit 80 compares the current temperature of the wafer chuck 18 with the target temperature and considers the temperature to be stable if it falls within a certain range. On the other hand, if there are drastic temperature fluctuations that do not fall within a certain range, the control device 50 determines that the temperature control parameters are inadequate. That is, if the temperature of the wafer chuck 18 does not fall within a certain range, the control device 50 determines that the currently set temperature control parameters are inappropriate. If the temperature control parameters are determined to be inappropriate, the adjustment unit 80 updates the settings to the adjusted temperature parameters by setting an offset to the current temperature control parameters. The adjustment unit 80 measures the temperature of the wafer chuck 18 again and evaluates the temperature control parameters after adjustment. The adjustment unit 80 repeats the above process until the temperature of the wafer chuck 18 stabilizes using the adjusted temperature control parameters. The adjustment unit 80 may also use machine learning to adjust the temperature control parameters. By using machine learning, the number of temperature measurement trials and the measurement time required to adjust the temperature control parameters can be reduced.

[0036] Furthermore, in the control device 50 provided in the wafer test system 1_3, when the temperature control parameters are set by the adjustment device 60, the adjustment unit 80 determines whether the temperature of the wafer chuck 18 will stabilize with the set temperature control parameters, and if it does not stabilize, it performs fine adjustment in the same manner as the adjustment method described above. Specifically, the adjustment unit 80 fine-tunes the set temperature control parameters based on the difference between the temperature control parameters set by the adjustment device 60 and the corresponding temperature control parameters before adjustment. The corresponding temperature control parameters before adjustment may be obtained from the adjustment device 60 together with the temperature control parameters to be set, or the adjustment unit 80 may refer to the temperature characteristics 73 of the database 62 as needed.

[0037] The temperature control parameters adjusted here are not limited to, but include various PID control parameters. For example, temperature control parameters include the subcooling value (correction temperature) of the chiller 40, PID values ​​for heater / three-way valve control, constant values ​​for three-way valve control (upper / lower opening limits, etc.), pump frequency, and expansion valve opening. Also, for example, temperature control parameters include PID values ​​for heater control and set values ​​for cooling output in the temperature control plate 20.

[0038] The temperature characteristic generation unit 82 generates a temperature characteristic that associates the temperature control parameters before adjustment, the temperature control parameters after adjustment, and the temperature change of the wafer chuck 18 during adjustment, while the adjustment unit 80 is adjusting the temperature control parameters. In other words, the temperature characteristic generation unit 82 generates information as a temperature characteristic that shows how the temperature of the wafer chuck 18 changes depending on how the temperature control parameters are adjusted. The more adjustments the adjustment unit 80 makes, the larger the amount of temperature characteristic data generated by the temperature characteristic generation unit 82 becomes. In this embodiment, the temperature control parameters before adjustment are an example of the first parameters before adjustment in this disclosure, and the temperature control parameters after adjustment are an example of the first parameters after adjustment in this disclosure.

[0039] The output unit 84 outputs the temperature characteristics generated by the temperature characteristics generation unit 82 to the adjustment device 60.

[0040] Meanwhile, the adjustment device 60 sets temperature control parameters for the wafer test system 1_3 based on the temperature characteristics obtained from the control devices 50_1 and 50_2. The temperature control parameters that the adjustment device 60 sets for the wafer test system 1_3 are an example of the second parameters of this disclosure.

[0041] Figure 5 is a block diagram showing an example of the configuration of the adjustment device 60 of this embodiment. As shown in Figure 5, the adjustment device 60 of this embodiment includes a CPU 61, ROM 62, RAM 63, storage 64, operation unit 66, display unit 67, and communication I / F 68. The CPU 61, ROM 62, RAM 63, storage 64, operation unit 66, display unit 67, and communication I / F 68 are connected to each other via a bus 69 such as a system bus or control bus, enabling the exchange of various information. The adjustment device 60 differs from the control device 50 in that a parameter adjustment program 65 is stored in the storage 64, but the other configurations are the same. The parameter adjustment program 65 may be a single program or may include multiple programs.

[0042] In other words, the CPU 61, ROM 62, RAM 63, storage 64, operation unit 66, display unit 67, and communication I / F 68 of the adjustment device 60 are the same as the CPU 51, ROM 52, RAM 53, storage 54, operation unit 56, display unit 57, and communication I / F 58 of the control device 50 described above, so a detailed explanation is omitted.

[0043] Figure 6 shows an example of the functional configuration of the adjustment device 60. As shown in Figure 6, the adjustment device 60 comprises an acquisition unit 90, a selection unit 92, and a setting unit 94. The CPU 61 executes the parameter adjustment program 65, thereby enabling the acquisition unit 90, the selection unit 92, and the setting unit 94 to function.

[0044] The acquisition unit 90 acquires temperature characteristics 73 from each of the control device 50_1 of the wafer test system 1_1 and the control device 50_2 of the wafer test system 1_2. The acquisition unit 90 stores the acquired temperature characteristics in the database 72. The database 72 is a so-called storage device such as a storage. As a result, a plurality of types of temperature characteristics 73 are accumulated in the database 72.

[0045] The selection unit 92 selects a temperature control parameter to be set for the wafer test system 1_3 from a plurality of adjusted temperature control parameters based on the plurality of temperature characteristics 73 accumulated in the database 72. The selection unit 92 of the present embodiment compares the temperature characteristics of the wafer test system 1_1 with the temperature characteristics of the wafer test system 1_2, and selects a temperature control parameter that achieves more stable temperature for the temperature change of the wafer chuck 18.

[0046] The temperature change of the wafer chuck 18 is, for example, at least one of a change amount relative to a target temperature, a change time, and the number of changes. Examples of the change amount relative to the target temperature include the amount of undershoot that exceeds the allowable temperature range, as shown in (i) of FIG. 7, and the amount of overshoot as shown in (ii) of FIG. 7. Specifically, undershoot and overshoot are determined based on the temperature and time exceeding the allowable temperature range (target value). Further, as for the change time, since instantaneous undershoot and overshoot can be ignored, cases where the change time is short may be excluded. Furthermore, examples of the number of changes include hunting as shown in (iii) of FIG. 7. Specifically, for example, when the target temperature is -40°C, a threshold is set for determination such that if the temperature becomes -39°C or higher or -41°C or lower within one minute, it is regarded as hunting.

[0047] When undershoot, overshoot, hunting, or the like as described above do not occur, the selection unit 92 regards the temperature control parameter as stable.

[0048] The setting unit 94 sets the temperature control parameter selected by the selection unit 92 in the wafer test system 1_3.

[0049] As described above, in the parameter adjustment method of the above embodiment, the acquisition unit 90 of the adjustment device 60 acquires temperature characteristics 73 from each of the wafer test systems 1_1 and 1_2, which associate the temperature control parameters before adjustment and after adjustment when the temperature control parameters required for testing the wafer W are adjusted, with the temperature change of the wafer chuck 18 during adjustment. The selection unit 92 then selects a temperature control parameter to be set in the wafer test system 1_3 from a plurality of adjusted temperature control parameters based on the acquired temperature characteristics 73. The setting unit 94 then sets the selected temperature control parameter in the wafer test system 1_3.

[0050] Thus, according to the parameter adjustment method of this embodiment, the temperature control parameters selected considering the temperature change of the wafer chuck 18 due to the adjustment of the temperature control parameters are set in the other wafer test system 1.

[0051] Therefore, according to the parameter adjustment method of this embodiment, more appropriate parameters can be set for the wafer test system 1. Furthermore, according to the parameter adjustment method of this embodiment, parameters can be set automatically for the wafer test system 1.

[0052] In the above configuration, the temperature control parameters to be set in the other wafer test system 1 were selected based on the temperature characteristics of the two wafer test systems 1. However, a configuration based on the temperature characteristics of two or more wafer test systems 1 is also possible.

[0053] Furthermore, if fine adjustments are made in wafer test system 1_3 as described above, the adjustment device 60 may acquire the temperature characteristics of the adjustment and store them in the database 72 as temperature characteristics 73. By storing the temperature characteristics 73 in this way, it becomes possible to use those temperature characteristics 73 when setting temperature control parameters for wafer test systems 1 other than wafer test systems 1_1 to 1_3.

[0054] Alternatively, the adjustment device 60 may acquire the temperature control parameters after adjustment in the wafer test system 1_1, set them in the wafer test system 1_2, and then acquire the temperature characteristics 73 generated by the temperature characteristic generation unit 82 as a result of adjustment by the adjustment unit 80 of the control device 50 based on those temperature control parameters. Alternatively, the adjustment device 60 may acquire the temperature control parameters after adjustment in the wafer test system 1_2, set them in the wafer test system 1_1, and then acquire the temperature characteristics 73 generated by the temperature characteristic generation unit 82 as a result of adjustment by the adjustment unit 80 of the control device 50 based on those temperature control parameters. The selection unit 92 of the adjustment device 60 may then select the temperature control parameters to be set in the wafer test system 1_3 from among a plurality of adjusted temperature control parameters, also based on these temperature characteristics 73.

[0055] Furthermore, although the above embodiment describes a configuration in which the control program 55 and the parameter adjustment program 65 are pre-stored (installed) in the storage 54, the invention is not limited to this configuration. The control program 55 and the parameter adjustment program 65 may be provided in a form recorded on a recording medium such as a CD-ROM (Compact Disc Read Only Memory), DVD-ROM (Digital Versatile Disc Read Only Memory), or USB (Universal Serial Bus) memory. Alternatively, the control program 55 and the parameter adjustment program 65 may be provided in a form that can be downloaded from an external device via a network.

[0056] 1, 1_1 to 1_3 Wafer Test System 2 Temperature Measurement System 10 Probe 12 Housing, 12A Top Plate, 12B Base 14 Wafer Transfer Mechanism 18 Wafer Chuck 18A Holding Surface 20 Temperature Control Plate 24 Probe Card 25 Probe 30 Tester 31 Tester Body 32 Interface 50, 50_1 to 50_3 Control Device 51, 61 CPU 54, 64 Storage 55 Control Program 60 Adjustment Device 65 Parameter Adjustment Program 72 Database 73 Temperature Characteristics 80 Adjustment Unit 82 Temperature Characteristics Generation Unit 84 Output Unit 90 Acquisition Unit 92 Selection Unit 94 Setting Unit W Wafer

Claims

1. A parameter adjustment method for a wafer test system having at least a prober having a wafer chuck for holding a wafer and a temperature controller for adjusting the temperature of the wafer chuck, the parameter adjustment method comprising: acquiring temperature characteristics that associate the first parameter before adjustment and the first parameter after adjustment, when the parameters required for testing the wafer are adjusted from each of a plurality of wafer test systems, which is a first wafer test system, with the temperature change of the wafer chuck during adjustment; selecting a second parameter from a plurality of the first parameters after adjustment based on the acquired plurality of temperature characteristics; and setting the second parameter in a second wafer test system different from the first wafer test system.

2. The parameter adjustment method according to claim 1, further comprising a process for fine-tuning the set second parameter with respect to the second wafer test system.

3. The parameter adjustment method according to claim 2, wherein the second parameter is fine-tuned based on the difference between the adjusted first parameter, which is set as the second parameter, and the corresponding first parameter before adjustment.

4. The parameter adjustment method according to claim 1, wherein the temperature change of the wafer chuck is at least one of the amount of change, the time of change, and the number of changes relative to the target temperature, and a second parameter is selected from a plurality of adjusted first parameters based on the temperature change of the wafer chuck.

5. The parameter adjustment method according to claim 1, wherein a second parameter is selected from a plurality of adjusted first parameters, based on the temperature characteristics of the first wafer test system, which have been adjusted by setting the adjusted first parameter of another first wafer test system as a new parameter.

6. A parameter adjustment system for adjusting parameters of a wafer test system having at least a prober having a wafer chuck for holding a wafer and a temperature controller for adjusting the temperature of the wafer chuck, comprising: a plurality of first wafer test systems; a second wafer test system different from the first wafer test system; an acquisition unit that acquires temperature characteristics relating a first parameter before adjustment and a first parameter after adjustment, when the parameters required for testing the wafer are adjusted from each of the plurality of first wafer test systems, and the temperature change of the wafer chuck during adjustment; a selection unit that selects a second parameter from a plurality of first parameters after adjustment based on the acquired plurality of temperature characteristics; and a setting unit that sets the second parameter in the second wafer test system.

7. The parameter adjustment system according to claim 6, wherein each of the first wafer test system and the second wafer test system further includes a chiller for cooling the wafer chuck, and the parameters required during testing the wafer also include parameters relating to the chiller.

8. The parameter adjustment system according to claim 6, further comprising a plurality of control devices provided in each of the plurality of first wafer test systems for adjusting parameters required during wafer testing and outputting the temperature characteristics.

9. An adjustment device used for adjusting parameters of a wafer test system having at least a wafer chuck for holding a wafer and a prober having a temperature controller for adjusting the temperature of the wafer chuck, the adjustment device comprising: an acquisition unit that acquires temperature characteristics associated with the temperature change of the wafer chuck when the parameters required for testing the wafer are adjusted from each of a plurality of wafer test systems, which is a first wafer test system; a selection unit that selects a second parameter from a plurality of first parameters after adjustment based on the acquired plurality of temperature characteristics; and a setting unit that sets the second parameter to a second wafer test system different from the first wafer test system.

10. A parameter adjustment program for causing a computer to perform a parameter adjustment process for a wafer test system having at least a wafer chuck for holding wafers and a prober having a temperature controller for adjusting the temperature of the wafer chuck, wherein the program obtains temperature characteristics from each of a plurality of wafer test systems, namely a first parameter before adjustment and a first parameter after adjustment, when the parameters required for testing the wafer are adjusted, and associates these with the temperature change of the wafer chuck during adjustment; selects a second parameter from a plurality of first parameters after adjustment based on the obtained temperature characteristics; and causes a computer to perform a process of setting the second parameter in a second wafer test system different from the first wafer test system.

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