Semiconductor device

Abstract

[Problem] To provide a semiconductor device in which progression of delamination occurring at the interface between a semiconductor substrate and an insulating film can be suppressed. [Solution] A semiconductor device according to an embodiment of he present disclosure comprises: a semiconductor substrate; an insulating film provided on the reverse surface of the semiconductor substrate; an organic film provided on the reverse surface of the insulating film; and a protrusion that protrudes from the organic film or insulating film at an outer peripheral section of the interface between the semiconductor substrate and the insulating film and contacts the semiconductor substrate.

Description

Semiconductor device

[0001] The present disclosure relates to a semiconductor device.

[0002] In the GDR (guard ring) process of WLCSP (Wafer Level Chip Size Package), peeling defects may occur at the interface between an insulating layer and a semiconductor substrate. This peeling occurs at the end of a semiconductor chip due to processing load during the dicing process of the semiconductor chip, and propagates to the inside of the semiconductor chip. When peeling occurs between an insulating film and a semiconductor substrate, reliability may be degraded. However, since this peeling occurs on the back surface side of the semiconductor chip and is microscopic, it is difficult to detect the peeling in defect inspection.

[0003] Japanese Unexamined Patent Publication No. 2015-128178

[0004] The present disclosure provides a semiconductor device capable of suppressing propagation of peeling that occurs at the interface between a semiconductor substrate and an insulating film.

[0005] A semiconductor device according to an embodiment of the present disclosure comprises: a semiconductor substrate; an insulating film provided on a back surface of the semiconductor substrate; an organic film provided on a back surface of the insulating film; and a convex portion that protrudes from the organic film or the insulating film at an outer peripheral portion of the interface between the semiconductor substrate and the insulating film and is in contact with the semiconductor substrate.

[0006] Further, the semiconductor device may further comprise a wiring covered by the organic film, and the convex portion may be arranged in a region outside the wiring.

[0007] Further, the convex portion may continuously surround the outer peripheral portion.

[0008] Further, the convex portion may be scattered to intermittently surround the outer peripheral portion.

[0009] Further, the convex portion may multiply surround the outer peripheral portion.

[0010] Further, an upper end of the convex portion may be located at the interface.

[0011] Further, an upper end of the convex portion may be located above the interface.

[0012] Furthermore, the upper end of the protrusion may be located at the upper end of the semiconductor substrate.

[0013] Alternatively, the lower end of the protrusion may be located within the insulating film, and the upper end of the protrusion may be located within the semiconductor substrate.

[0014] Furthermore, the cross-sectional shape of the convex portion may be tapered.

[0015] Furthermore, the cross-sectional shape of the convex portion may be in the form of an inverse taper.

[0016] Furthermore, the material of the protrusion may be the same organic material as the organic film.

[0017] Furthermore, the material of the protrusion may be different from that of the organic film.

[0018] Furthermore, the material of the protrusion may be a metal material.

[0019] Furthermore, the material of the protrusion may be the same material as the insulating film.

[0020] This is a plan view showing the interface between a semiconductor substrate and an insulating film according to the first embodiment. This is a cross-sectional view of a semiconductor device according to the first embodiment. This is a cross-sectional view showing the dicing process of a semiconductor device according to a comparative example. This is a plan view showing the interface between a semiconductor substrate and an insulating film after the dicing process shown in Figure 3. This is a cross-sectional view showing the dicing process of a semiconductor device according to the first embodiment. This is a plan view showing the interface between a semiconductor substrate and an insulating film after the dicing process shown in Figure 5. This is a plan view showing the interface between a semiconductor substrate and an insulating film according to the second embodiment. This is a cross-sectional view of a semiconductor device according to the second embodiment. This is a plan view showing the interface between a semiconductor substrate and an insulating film according to the third embodiment. This is a cross-sectional view of a semiconductor device according to the third embodiment. This is a plan view showing the interface between a semiconductor substrate and an insulating film according to the fourth embodiment. This is a cross-sectional view of a semiconductor device according to the fourth embodiment. This is a plan view showing the interface between a semiconductor substrate and an insulating film according to the fifth embodiment. This is a cross-sectional view of a semiconductor device according to the fifth embodiment. This is a plan view showing the interface between a semiconductor substrate and an insulating film according to the sixth embodiment. This is a cross-sectional view of a semiconductor device according to the sixth embodiment. This is a plan view showing the interface between a semiconductor substrate and an insulating film according to the seventh embodiment. This is a cross-sectional view of a semiconductor device according to the seventh embodiment. This is a block diagram showing an example of a schematic configuration of a vehicle control system. This is an explanatory diagram showing an example of the installation positions of an external information detection unit and an imaging unit.

[0021] Preferred embodiments of this disclosure will be described in detail below with reference to the attached drawings. In this specification and the drawings, components having substantially the same functional configuration are denoted by the same reference numerals, and redundant explanations will be omitted. In the following description, two mutually orthogonal directions in the in-plane direction parallel to the semiconductor substrate may be referred to as the X direction and the Y direction, respectively. In addition, the out-of-plane direction perpendicular to the semiconductor substrate may be referred to as the Z direction, which is orthogonal to the X direction and the Y direction.

[0022] (First Embodiment) Figure 1 is a plan view showing the interface between a semiconductor substrate and an insulating film provided in a semiconductor device according to the first embodiment. Figure 2 is a cross-sectional view of the semiconductor device according to the first embodiment. The cross-section shown in Figure 2 corresponds to the cross-section along the cutting line A1-A1 shown in Figure 1. The semiconductor device 1 according to this embodiment is a semiconductor chip comprising a semiconductor substrate 101, a semiconductor layer 102, an insulating film 103, an organic film 104, wiring 105, and a protrusion 106A. The components of the semiconductor device 1 according to this embodiment will be described below.

[0023] The semiconductor substrate 101 is, for example, a silicon substrate. The semiconductor substrate 101 is provided with TSVs (Through-Silicon Vias) 111. The TSVs 111 penetrate the semiconductor substrate 101 in the Z direction. The semiconductor layer 102 has semiconductor elements such as an image sensor and a drive circuit for these semiconductor elements formed on it.

[0024] An insulating film 103 is provided on the back (bottom) surface of the semiconductor substrate 101. The insulating film 103 is made of, for example, silicon oxide (SiO ２ It is a film. In addition, the insulating film 103 is also provided inside the TSV 111.

[0025] The organic film 104 is provided on the back (bottom) surface of the insulating film 103. The organic film 104 is, for example, a solder resist. The organic film 104 is also provided inside the TSV 111. Inside the TSV 111, the outer surface of the organic film 104 is covered by the insulating film 103.

[0026] The wiring 105 is covered by an organic film 104 inside the TSV 111. The wiring 105 is, for example, an RDL (Re-Redistribution Layer). The wiring 105 also extends outside the TSV 111 and is covered by the organic film 104 there as well.

[0027] The protrusion 106A is provided on the outer periphery of the interface between the semiconductor substrate 101 and the insulating film 103. More specifically, the protrusion 106A is provided in the outer region R of the wiring 105, in other words, in the region from the peripheral edge 1a of the semiconductor chip to the end portion 105a of the wiring 105. The protrusion 106A protrudes upward in the Z direction from the organic film 104, and its upper end contacts the semiconductor substrate 101. The protrusion 106A can be formed, for example, by forming a frame-shaped groove in the insulating film 103 using lithography and dry etching, and then embedding the same organic material as the organic film 104 into the formed groove.

[0028] Here, we will describe a comparative example that is different from the semiconductor device 1 configured as described above.

[0029] Figure 3 is a cross-sectional view showing the dicing process of a semiconductor device according to a comparative example. Figure 4 is a plan view showing the interface between the semiconductor substrate and the insulating film after the dicing process shown in Figure 3. Figure 5 is a cross-sectional view showing the dicing process of a semiconductor device according to the first embodiment. Figure 6 is a plan view showing the interface between the semiconductor substrate and the insulating film after the dicing process shown in Figure 5.

[0030] The semiconductor device 100 in this comparative example does not have the above-mentioned protrusion 106A. Therefore, when the semiconductor device 100 in wafer form attached to the dicing tape 200 is cut with the blade 210 as shown in Figure 3, a delamination portion P may occur at the interface between the semiconductor substrate 101 and the insulating film 103 due to the processing load. As shown in Figure 4, this delamination portion P progresses from the peripheral portion 100a, which is the cut surface of the blade 210, toward the interior of the interface.

[0031] On the other hand, in the semiconductor device 1 according to this embodiment, the protrusion 106A is in contact with the semiconductor substrate 101. Therefore, even if a peeled portion P occurs at the interface between the semiconductor substrate 101 and the insulating film 103 when the semiconductor device 1 in wafer form attached to the dicing tape 200 is cut with the blade 210 as shown in Figure 5, the progression of this peeled portion P is blocked by the protrusion 106A as shown in Figure 6. Thus, according to this embodiment, it is possible to suppress the progression of the peeled portion P that occurs at the interface between the semiconductor substrate 101 and the insulating film 103.

[0032] (Second Embodiment) Figure 7 is a plan view showing the interface between the semiconductor substrate and the insulating film provided in the semiconductor device according to the second embodiment. Figure 8 is a cross-sectional view of the semiconductor device according to the second embodiment. The cross-section shown in Figure 8 corresponds to the cross-section along the cutting line A2-A2 shown in Figure 7. The following description will focus on the differences from the first embodiment.

[0033] As shown in Figure 1, the protrusion 106A of the first embodiment described above is formed in a frame shape that continuously contacts the semiconductor substrate 101. On the other hand, as shown in Figure 7, the protrusion 106B of this embodiment is formed in a point shape that intermittently contacts the semiconductor substrate 101. Also, as shown in Figure 8, the protrusion 106B is arranged in the outer region R, similar to the protrusion 106A. The protrusion 106B can be formed by intermittently forming a plurality of grooves along the frame shape in the insulating film 103 and embedding the same organic material as the organic film 104 in each groove.

[0034] In the semiconductor device 2 configured as described above according to this embodiment, if the gap in the protrusion 106B, in other words, the spacing between the multiple grooves formed in the insulating film 103, is set to be smaller than the peeling portion P, the progression of the peeling portion P is prevented, as in the first embodiment. Therefore, in this embodiment as well, it is possible to suppress the progression of the peeling portion P that occurs at the interface between the semiconductor substrate 101 and the insulating film 103.

[0035] (Third Embodiment) Figure 9 is a plan view showing the interface between the semiconductor substrate and the insulating film provided in the semiconductor device according to the third embodiment. Figure 10 is a cross-sectional view of the semiconductor device according to the third embodiment. The cross-section shown in Figure 10 corresponds to the cross-section along the cutting line A3-A3 shown in Figure 9. The following description will focus on the differences from the first embodiment.

[0036] In the semiconductor device 1 according to the first embodiment described above, the protrusion 106A surrounds the interface between the semiconductor substrate 101 and the insulating film 103 in a single layer. On the other hand, in the semiconductor device 3 according to this embodiment, the interface is double-surrounded by the protrusions 106C1 and 106C2. Also, as shown in Figure 8, the protrusions 106C1 and 106C2 are arranged in the outer region R, similar to the protrusion 106A. The protrusions 106C1 and 106C2 can be formed by forming double grooves on the outer periphery of the insulating film 103 and embedding the same organic material as the organic film 104 in each groove.

[0037] In the semiconductor device 3 configured as described above according to this embodiment, the interface between the semiconductor substrate 101 and the insulating film 103 has a portion that contacts the protrusion 106C1A and a portion that contacts the protrusion 106C2 on the inside of the protrusion 106C1A. Therefore, the prevention of the progression of the delamination portion P from the interface is further enhanced. Accordingly, according to this embodiment, it is possible to further suppress the progression of the delamination portion P that occurs at the interface between the semiconductor substrate 101 and the insulating film 103 compared to the first embodiment.

[0038] (Fourth Embodiment) Figure 11 is a plan view showing the interface between the semiconductor substrate and the insulating film provided in the semiconductor device according to the fourth embodiment. Figure 12 is a cross-sectional view of the semiconductor device according to the fourth embodiment. The cross-section shown in Figure 12 corresponds to the cross-section along the cutting line A4-A4 shown in Figure 11. The following description will focus on the differences from the first embodiment.

[0039] The upper end of the protrusion 106A in the first embodiment described above is located at the interface between the semiconductor substrate 101 and the insulating film 103. On the other hand, the upper end of the protrusion 106D in this embodiment is located above the interface between the semiconductor substrate 101 and the insulating film 103. That is, the protrusion 106D terminates within the semiconductor substrate 101. The protrusion 106D can be formed, for example, by forming a groove that communicates with the semiconductor substrate 101 and the insulating film 103, and embedding the same organic material as the organic film 104 in the formed groove.

[0040] In the semiconductor device 4 configured as described above according to this embodiment, the upper end of the protrusion 106D is in contact with the semiconductor substrate 101 layer at a position above the interface between the semiconductor substrate 101 and the insulating film 103. Therefore, the prevention of the progression of the delamination portion P from the interface is further enhanced. Accordingly, according to this embodiment, it is possible to further suppress the progression of the delamination portion P that occurs at the interface between the semiconductor substrate 101 and the insulating film 103 compared to the first embodiment.

[0041] Figure 13 is a cross-sectional view of a semiconductor device according to a modified example of the fourth embodiment. In the semiconductor device 4A according to this modified example, the upper end of the protrusion 106D extends to the upper end of the semiconductor substrate 101. That is, the protrusion 106D penetrates the semiconductor substrate 101 and the insulating film 103 in the Z direction.

[0042] According to this modified example, the height of the protrusion 106D is even higher than in the second embodiment, making it even more difficult for the peeling portion P to progress. Therefore, it is possible to further suppress the progression of the peeling portion P compared to the second embodiment.

[0043] (Fifth Embodiment) Figure 14 is a plan view showing the interface between the semiconductor substrate and the insulating film provided in the semiconductor device according to the fifth embodiment. Figure 15 is a cross-sectional view of the semiconductor device according to the fifth embodiment. The cross-section shown in Figure 15 corresponds to the cross-section along the cutting line A5-A5 shown in Figure 14. The following description will focus on the differences from the first embodiment.

[0044] In the first embodiment described above, the lower end of the protrusion 106A is located on the organic film 104, and the upper end of the protrusion 106A is located at the interface between the semiconductor substrate 101 and the insulating film 103. On the other hand, in the semiconductor device 5 according to this embodiment, the lower end of the protrusion 106E is located on the insulating film 103, and the upper end of the protrusion 106E is located inside the semiconductor substrate 101. That is, the protrusion 106E forms an uneven shape at the interface between the semiconductor substrate 101 and the insulating film 103. The protrusion 106E is also located within the outer region R. This protrusion 106E terminates in a groove within the semiconductor substrate 101. The protrusion 106E can be formed, for example, by forming a frame-shaped groove in the semiconductor substrate 101 and embedding the same insulating material as the insulating film 103 in the formed groove.

[0045] Therefore, according to the present embodiment, the anchor effect obtained from the convex portion 106E improves the function of blocking the progression of the peeled portion P. Accordingly, it becomes possible to suppress the progression of the peeled portion P that occurs at the interface between the semiconductor substrate 101 and the insulating film 103.

[0046] (Sixth Embodiment) FIG. 16 is a plan view showing an interface between a semiconductor substrate and an insulating film provided in a semiconductor device according to the sixth embodiment. FIG. 17 is a cross-sectional view of the semiconductor device according to the sixth embodiment. The cross-section shown in FIG. 17 corresponds to a cross-section taken along the cutting line A6-A6 shown in FIG. 16. The following description focuses on points that differ from the first embodiment.

[0047] The cross-sectional shape of the convex portion 106A according to the above-described embodiment is a rectangle in which the width (length in the X direction) of the upper end portion and the lower end portion are equal to each other. In contrast, the cross-sectional shape of the convex portion 106F according to the present embodiment is tapered, in which the width of the lower end portion is smaller than the width of the upper end portion. The convex portion 106F can be formed, for example, by forming a tapered groove in the insulating film 103 and embedding the same organic material as that of the organic film 104 into the formed groove.

[0048] In the semiconductor device 6 according to the present embodiment configured as described above, since the convex portion 106F is in contact with the semiconductor substrate 101, the progression of the peeled portion P is blocked similarly to the first embodiment. Therefore, also in the present embodiment, it becomes possible to suppress the progression of the peeled portion P that occurs at the interface between the semiconductor substrate 101 and the insulating film 103. Furthermore, in the present embodiment, the contact area between the convex portion 106F and the semiconductor substrate 101 increases, so it becomes possible to improve the function of blocking the progression of the peeled portion P.

[0049] FIG. 18 is a cross-sectional view of a semiconductor device according to a modification of the sixth embodiment. In the semiconductor device 6A according to the present modification, the cross-sectional shape of the convex portion 106F is reversely tapered, in which the width of the lower end portion is larger than the width of the upper end portion. The convex portion 106F can be formed, for example, by forming a reversely tapered groove in the insulating film 103 and embedding the same organic material as that of the organic film 104 into the formed groove.

[0050] In the semiconductor device 6A according to this modified example configured as described above, the protrusion 106F is in contact with the semiconductor substrate 101, so the progression of the peeling portion P is prevented, similar to the first embodiment. Therefore, in this embodiment as well, it is possible to suppress the progression of the peeling portion P that occurs at the interface between the semiconductor substrate 101 and the insulating film 103.

[0051] (Seventh Embodiment) Figure 19 is a plan view showing the interface between the semiconductor substrate and the insulating film provided in the semiconductor device according to the seventh embodiment. Figure 20 is a cross-sectional view of the semiconductor device according to the seventh embodiment. The cross-section shown in Figure 20 corresponds to the cross-section along the cutting line A7-A7 shown in Figure 19. The following description will focus on the differences from the first embodiment.

[0052] The material of the protrusion 106A in the above embodiment is the same organic material as the organic film 104. On the other hand, in the semiconductor device 7 according to this embodiment, the material of the protrusion 106G is different from the organic film 104. For this material, for example, a different organic material or a metallic material can be used from the organic film 104. Furthermore, for this metallic material, for example, titanium (Ti), copper (Cu), tungsten (W), cobalt (Co), etc. can be used. The protrusion 106G can be formed, for example, by forming a groove in the insulating film 103 and embedding a material different from the organic film 104 in the formed groove.

[0053] In the semiconductor device 7 configured as described above according to this embodiment, the protrusion 106G is in contact with the semiconductor substrate 101, so the progression of the peeling portion P is prevented, similar to the first embodiment. Therefore, in this embodiment as well, it is possible to suppress the progression of the peeling portion P that occurs at the interface between the semiconductor substrate 101 and the insulating film 103. Furthermore, in this embodiment, the contact area between the protrusion 106F and the semiconductor substrate 101 is increased, so it is possible to improve the function of preventing the progression of the peeling portion P.

[0054] <Examples of application to mobile devices> The technology disclosed herein (this technology) can be applied to various products. For example, the technology disclosed herein may be implemented as a device mounted on any type of mobile device such as automobiles, electric vehicles, hybrid electric vehicles, motorcycles, bicycles, personal mobility devices, airplanes, drones, ships, and robots.

[0055] Figure 21 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile control system to which the technology described herein may be applied.

[0056] The vehicle control system 12000 comprises a plurality of electronic control units connected via a communication network 12001. In the example shown in Figure 21, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and an integrated control unit 12050. The functional configuration of the integrated control unit 12050 is shown in the figure, which includes a microcomputer 12051, an audio / image output unit 12052, and an in-vehicle network interface 12053.

[0057] The drivetrain control unit 12010 controls the operation of devices related to the vehicle's drivetrain according to various programs. For example, the drivetrain control unit 12010 functions as a control device for a drivetrain generating device that generates driving force for the vehicle, such as an internal combustion engine or a drive motor; a drivetrain transmission mechanism that transmits driving force to the wheels; a steering mechanism that adjusts the steering angle of the vehicle; and a braking device that generates braking force for the vehicle.

[0058] The body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window system, or various lamps such as headlights, reverse lights, brake lights, turn signals, or fog lights. In this case, the body system control unit 12020 may receive radio waves transmitted from a portable device that replaces a key or signals from various switches. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock system, power window system, lamps, etc.

[0059] The external information detection unit 12030 detects information from outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the external information detection unit 12030. The external information detection unit 12030 causes the imaging unit 12031 to capture images of the outside of the vehicle and receives the captured images. Based on the received images, the external information detection unit 12030 may perform object detection processing such as detecting people, cars, obstacles, signs, or characters on the road surface, or distance detection processing.

[0060] The imaging unit 12031 is a light sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0061] The in-vehicle information detection unit 12040 detects information inside the vehicle. The in-vehicle information detection unit 12040 is connected to, for example, a driver status detection unit 12041 that detects the driver's state. The driver status detection unit 12041 includes, for example, a camera that captures images of the driver, and the in-vehicle information detection unit 12040 may calculate the driver's level of fatigue or concentration, or determine whether the driver is drowsy, based on the detection information input from the driver status detection unit 12041.

[0062] The microcomputer 12051 can calculate control target values ​​for the drive force generator, steering mechanism, or braking device based on information inside and outside the vehicle acquired by the external information detection unit 12030 or the internal information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing ADAS (Advanced Driver Assistance System) functions, including vehicle collision avoidance or impact mitigation, following driving based on distance between vehicles, maintaining vehicle speed, vehicle collision warning, or vehicle lane departure warning.

[0063] Furthermore, the microcomputer 12051 can perform cooperative control for purposes such as autonomous driving, where the vehicle drives autonomously without driver intervention, by controlling the drive force generating device, steering mechanism, or braking device, etc., based on information about the vehicle's surroundings acquired by the external information detection unit 12030 or the internal information detection unit 12040.

[0064] Furthermore, the microcomputer 12051 can output control commands to the body system control unit 12020 based on external information acquired by the external information detection unit 12030. For example, the microcomputer 12051 can control the headlights according to the position of a preceding or oncoming vehicle detected by the external information detection unit 12030, and perform coordinated control aimed at reducing glare, such as switching from high beams to low beams.

[0065] The audio-image output unit 12052 transmits at least one of audio and image output signals to an output device capable of visually or audibly notifying information to the vehicle's occupants or to those outside the vehicle. In the example shown in Figure 21, the output devices include an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an onboard display and a head-up display.

[0066] Figure 22 shows an example of the installation position of the imaging unit 12031.

[0067] In Figure 22, the vehicle 12100 has imaging units 12101, 12102, 12103, 12104, and 12105 as the imaging unit 12031.

[0068] The imaging units 12101, 12102, 12103, 12104, and 12105 are installed, for example, on the front nose, side mirrors, rear bumper, back door, and the upper part of the windshield inside the vehicle 12100. The imaging unit 12101 installed on the front nose and the imaging unit 12105 installed on the upper part of the windshield inside the vehicle mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 installed on the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 installed on the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The forward images acquired by imaging units 12101 and 12105 are mainly used for detecting preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, or lanes.

[0069] Figure 22 shows an example of the imaging range of imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of imaging unit 12101 located on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of imaging units 12102 and 12103 located on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of imaging unit 12104 located on the rear bumper or back door. For example, by superimposing the image data captured by imaging units 12101 to 12104, an overhead view image of the vehicle 12100 can be obtained.

[0070] At least one of the imaging units 12101 to 12104 may have a function for acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera consisting of multiple image sensors, or an image sensor having pixels for phase difference detection.

[0071] For example, the microcomputer 12051, based on distance information obtained from the imaging units 12101 to 12104, can determine the distance to each object within the imaging range 12111 to 12114 and the temporal change of this distance (relative speed to the vehicle 12100). In particular, it can extract the closest object on the vehicle 12100's path that is traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or more) as the preceding vehicle. Furthermore, the microcomputer 12051 can set a predetermined distance to be maintained before the preceding vehicle and perform automatic braking control (including follow-and-stop control) and automatic acceleration control (including follow-and-start control), etc. In this way, cooperative control aimed at autonomous driving, etc., that drives autonomously without driver operation, can be performed.

[0072] For example, the microcomputer 12051 can use distance information obtained from imaging units 12101 to 12104 to classify and extract three-dimensional object data related to three-dimensional objects, such as motorcycles, passenger cars, large vehicles, pedestrians, utility poles, and other three-dimensional objects, and use this data for automatic obstacle avoidance. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the degree of risk of collision with each obstacle. If the collision risk is above a set value and there is a possibility of collision, the microcomputer 12051 can provide driving assistance to avoid collisions by outputting a warning to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or evasive steering via the drive system control unit 12010.

[0073] At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared light. For example, the microcomputer 12051 can recognize pedestrians by determining whether or not pedestrians are present in the images captured by the imaging units 12101 to 12104. Such pedestrian recognition is performed, for example, by a procedure to extract feature points from the images captured by the imaging units 12101 to 12104 as infrared cameras, and a procedure to perform pattern matching on a series of feature points that indicate the contour of an object to determine whether or not it is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the imaging units 12101 to 12104 and recognizes a pedestrian, the audio-image output unit 12052 controls the display unit 12062 to superimpose a rectangular contour line for emphasis on the recognized pedestrian. The audio-image output unit 12052 may also control the display unit 12062 to display an icon indicating a pedestrian at a desired position.

[0074] The above describes an example of a vehicle control system to which the technology of this disclosure may be applied. The technology of this disclosure can be applied to, for example, the imaging unit 12031 of the configuration described above. Specifically, any of the semiconductor devices of the embodiments described above can be mounted on the imaging unit 12031. By applying the technology of this disclosure to the imaging unit 12031, reliability is improved. As a result, it becomes possible to improve the performance of the vehicle 12100.

[0075] The embodiments described above are merely examples of how to realize this technology, and there is a corresponding relationship between the matters in the embodiments and the inventive features in the claims. Similarly, there is a corresponding relationship between the inventive features in the claims and the matters in the embodiments of this technology that bear the same name. However, this technology is not limited to the embodiments and can be realized by making various modifications to the embodiments without departing from the gist of the technology.

[0076] Furthermore, this technology can take the following configuration.

[0077] (1) A semiconductor device comprising: a semiconductor substrate; an insulating film provided on the back surface of the semiconductor substrate; an organic film provided on the back surface of the insulating film; and a protrusion that protrudes from the organic film or the insulating film at the outer periphery of the interface between the semiconductor substrate and the insulating film and contacts the semiconductor substrate.

[0078] (2) The semiconductor device according to (1), further comprising wiring covered with the organic film, wherein the protrusion is located in the outer region of the wiring.

[0079] (3) The semiconductor device according to (1) or (2), wherein the protrusions continuously surround the outer periphery.

[0080] (4) The semiconductor device according to (1) or (2), wherein the protrusions are scattered so as to intermittently surround the outer periphery.

[0081] (5) The semiconductor device according to (1) or (2), wherein the protrusions surround the outer periphery in multiple layers.

[0082] (6) The semiconductor device according to (1) or (2), wherein the upper end of the protrusion is located at the interface.

[0083] (7) The semiconductor device according to (1) or (2), wherein the upper end of the protrusion is located above the interface.

[0084] (8) The semiconductor device according to (7), wherein the upper end of the protrusion is located at the upper end of the semiconductor substrate.

[0085] (9) The semiconductor device according to (1) or (2), wherein the lower end of the protrusion is located in the insulating film and the upper end of the protrusion is located in the semiconductor substrate.

[0086] (10) The semiconductor device according to (1) or (2), wherein the cross-sectional shape of the convex portion is tapered.

[0087] (11) The semiconductor device according to (1) or (2), wherein the cross-sectional shape of the convex portion is inversely tapered.

[0088] (12) The semiconductor device according to (1) or (2), wherein the material of the protrusion is the same organic material as the organic film.

[0089] (13) The semiconductor device according to (1) or (2), wherein the material of the protrusion is a different material from the organic film.

[0090] (14) The semiconductor device according to (13), wherein the material of the protrusion is a metallic material.

[0091] (15) The semiconductor device according to (8), wherein the material of the protrusion is the same material as the insulating film.

[0092] 1-7: Semiconductor equipment 101: Semiconductor substrate 103: Insulating film 104: Organic film 105: Wiring 106A-106G: Protrusions

Claims

1. A semiconductor device comprising: a semiconductor substrate; an insulating film provided on the back surface of the semiconductor substrate; an organic film provided on the back surface of the insulating film; and a protrusion that protrudes from the organic film or the insulating film at the outer periphery of the interface between the semiconductor substrate and the insulating film and contacts the semiconductor substrate.

2. The semiconductor device according to claim 1, further comprising wiring covered with the organic film, wherein the protrusion is located in the outer region of the wiring.

3. The semiconductor device according to claim 1, wherein the protrusions continuously surround the outer periphery.

4. The semiconductor device according to claim 1, wherein the protrusions are scattered intermittently around the outer periphery.

5. The semiconductor device according to claim 1, wherein the protrusions surround the outer periphery in multiple layers.

6. The semiconductor device according to claim 1, wherein the upper end of the protrusion is located at the interface.

7. The semiconductor device according to claim 1, wherein the upper end of the protrusion is located above the interface.

8. The semiconductor device according to claim 7, wherein the upper end of the protrusion is located at the upper end of the semiconductor substrate.

9. The semiconductor device according to claim 1, wherein the lower end of the protrusion is located in the insulating film and the upper end of the protrusion is located within the semiconductor substrate.

10. The semiconductor device according to claim 1, wherein the cross-sectional shape of the convex portion is tapered.

11. The semiconductor device according to claim 1, wherein the cross-sectional shape of the convex portion is inversely tapered.

12. The semiconductor device according to claim 1, wherein the material of the protrusion is the same organic material as the organic film.

13. The semiconductor device according to claim 1, wherein the material of the protrusion is a different material from the organic film.

14. The semiconductor device according to claim 13, wherein the material of the convex portion is a metallic material.

15. The semiconductor device according to claim 8, wherein the material of the protrusion is the same material as the insulating film.

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