Laminate, method for manufacturing laminate, and method for manufacturing semiconductor device using laminate

Abstract

The present invention addresses the problem of providing a laminate that makes it possible to transfer fine and densely mounted semiconductor chips to a target circuit board with high positional accuracy regardless of positional deviation of laser light during transfer of the semiconductor chips. In order to solve this problem, the main objective of the present invention is to provide a laminate in which a substrate, a resin film, and semiconductor chips are laminated in this order, the resin film including a region having an indentation elastic modulus from 1 MPa to 500 MPa (the indentation elastic modulus of said region referred to as "elastic modulus α") and a region surrounding said region and having an indentation elastic modulus higher than the elastic modulus α (the indentation elastic modulus of said region referred to as "elastic modulus β"), the ratio β / α of the elastic modulus α and the elastic modulus β being a value exceeding 1, and the semiconductor chips laminated on a region α.

Description

Laminate, method for manufacturing a laminate, and method for manufacturing a semiconductor device using the laminate.

[0001] The present invention relates to a laminate suitable for the manufacture of semiconductor devices. More specifically, it relates to a laminate in which semiconductor chips are stacked, and which is suitably used when mounting the semiconductor chips stacked on the laminate onto a circuit board by laser transfer.

[0002] Generally, components incorporated into semiconductor devices are transferred and mounted to circuit boards using a pick-and-place method with a flip-chip bonder or similar device. In recent years, semiconductor devices have become more high-performance and smaller, and consequently, the components incorporated into them have also become smaller and thinner, and the number of components mounted within a semiconductor device has increased. Recently, displays that use light-emitting diode (LED) chips, a type of semiconductor chip, as pixels have attracted attention due to their high brightness, low power consumption, and high image quality. The LEDs mounted as pixels are called microLEDs, and tiny LEDs with sides of several hundred to tens of micrometers are used. In manufacturing these microLED displays, the above mounting method is too time-consuming, so new methods are being considered.

[0003] As a method for mounting a large number of small semiconductor chips, a laser transfer technique has been proposed. This technique involves preparing a laminate by stacking semiconductor chips on the side of the adhesive layer opposite the support substrate side of the laminate, and then irradiating the laminate with a laser from the support substrate side. This selectively transfers and mounts the semiconductor chips to a counter substrate, such as a circuit board, located a certain distance below the laminate, at the desired spacing. This technique has the advantage of being able to transfer semiconductor chips quickly and over a wide area by irradiating a laser while rapidly moving a stage on which the laminate and / or circuit board are mounted. "Transfer" refers to the process of moving a semiconductor chip from its original substrate to another substrate.

[0004] One example of a laminate used in laser transfer technology is a laminate that applies a thin adhesive layer and uses laser irradiation to ablate and eliminate the adhesive layer between the support substrate and the semiconductor chip, thereby removing all adhesive layer residue on the semiconductor chip while enabling the transfer of the semiconductor chip (for example, Patent Documents 1 and 2). Another example is a laminate in which laser irradiation ablates the hardened film located at the interface between the support substrate and the hardened film, and the resulting gas accumulates at the interface between the adhesive layer and the support substrate, forming a void (blister). The change in the shape of the adhesive layer causes the element to peel off and separate, thereby transferring the semiconductor chip (for example, Patent Document 3). Furthermore, there is a technology that controls the adhesive strength of the adhesive layer by light irradiation, thereby transferring the semiconductor chip without any adhesive layer residue (for example, Patent Document 4).

[0005] Japanese Patent Publication No. 2020-188037, International Publication No. 2022 / 201767, International Publication No. 2022 / 153745, Japanese Patent Publication No. 2023-82842

[0006] The technology described in Patent Document 3 can transfer semiconductor chips while suppressing the generation of residue and debris. However, it requires precise alignment of the laser center with the semiconductor chip center, and a slight misalignment of the laser by several micrometers can make it difficult to transfer the semiconductor chip with high positional accuracy.

[0007] Therefore, the object of the present invention is to provide a laminate that can transfer finely and densely mounted semiconductor chips to a target circuit board with high positional accuracy, regardless of the misalignment of the laser light during the transfer of the semiconductor chips.

[0008] The essence of the present invention for solving the above problems is as follows: [1] A laminate in which a substrate, a resin film, and a semiconductor chip are stacked in this order, wherein the resin film has a region in which the indentation modulus is 1 MPa or more and 500 MPa or less (for convenience, this region will be called "region α", and the indentation modulus of this region will be called "modulus α") and a region surrounding this region in which the indentation modulus is higher than modulus α (for convenience, this region will be called "region β", and the indentation modulus of this region will be called "modulus β"), the ratio β / α of modulus α to modulus β is greater than 1, and the semiconductor chip is stacked on region α. ​​[2] The laminate according to [1], wherein the thickness of the resin film is in the range of 5 μm or more and 30 μm or less. [3] The laminate according to [1] or [2], wherein region α of the resin film contains a compound having three or more crosslinking reaction sites in its molecule. [4] The laminate according to any one of [1] to [3], wherein region α of the resin film is composed of a radiation-sensitive resin in which components contained in the irradiated region are crosslinked or polymerized by irradiation with radiation, and region β is composed of the resin after crosslinking or polymerization of the radiation-sensitive resin. [5] The laminate according to any one of [1] to [4], wherein the resin film contains one or more resins selected from the group consisting of polyimide, polybenzoxazole and their precursors and copolymers thereof. [6] A method for manufacturing a laminate comprising the following steps 1 to 3, wherein steps 1 to 3 are performed in this order, and the method for manufacturing a laminate satisfies the following conditions 1 and 2. Step 1: A step of applying a radiation-sensitive resin to a substrate in which components contained in the irradiated region are crosslinked or polymerized by irradiation with radiation to form a radiation-sensitive resin film. Step 2: A step of laminating a semiconductor chip on the surface of the radiation-sensitive resin film formed on the substrate. Step 3: A step of irradiating the radiation-sensitive resin film formed on the substrate with radiation from the side of the semiconductor chip. Condition 1: In a radiation-sensitive resin film after irradiation, the indentation modulus of the area where the semiconductor chip is mounted is 1 MPa or more and 500 MPa or less. Condition 2: In a radiation-sensitive resin film after irradiation, the value obtained by dividing the indentation modulus (MPa) of the area where the semiconductor chip is mounted by the indentation modulus (MPa) of the area where the semiconductor chip is mounted is greater than 1.[7] The method for manufacturing a laminate according to [6], wherein step 2 is the following steps 2-1 to 2-3 performed in this order: Step 2-1: A step of preparing a semiconductor chip-equipped substrate on which a semiconductor chip is mounted. Step 2-2: A step of arranging the radiation-sensitive resin film side of the radiation-sensitive resin film-equipped substrate obtained in step 1 and the side of the semiconductor chip-equipped substrate on which the semiconductor chip is mounted facing each other. Step 2-3: A step of transferring the semiconductor chip mounted on the semiconductor chip-equipped substrate onto the radiation-sensitive resin film of the radiation-sensitive resin film-equipped substrate. [8] The method for manufacturing a laminate according to [7], wherein in step 2-3, the method for separating the semiconductor chip mounted on the semiconductor chip-equipped substrate from the substrate is a mechanical peeling method. [9] The method for manufacturing a laminate according to [7], wherein in step 2-3, the method for separating the semiconductor chip mounted on the semiconductor chip-equipped substrate from the substrate is a peeling method by irradiation with a laser from the substrate side.

[10] A method for producing a laminate according to any one of [6] to [9], wherein the radiation-sensitive resin contains a compound having three or more crosslinking groups in its molecule.

[11] A method for producing a laminate according to any one of [6] to

[10] , wherein the radiation-sensitive resin contains one or more resins selected from the group consisting of polyimide, polybenzoxazole and their precursors and copolymers thereof.

[12] A method for producing a semiconductor device, comprising the following steps 4 to 6, wherein steps 4 to 6 are performed in this order.

[0009] Step 4: The process of preparing a circuit board on which semiconductor chips are to be mounted.

[0010] Step 5: A step of arranging the laminate obtained by any one of [1] to [5] or by any one of [6] to

[11] with the side on which the semiconductor chips are stacked facing the side of the circuit board on which the semiconductor chips are mounted.

[0011] Step 6: A step of irradiating a laminate obtained by any of the methods described in [1] to [5] or any of the methods described in [6] to

[11] with a laser beam from the side opposite to the side on which the semiconductor chip is stacked, to transfer the semiconductor chip to the circuit-equipped substrate, and to optically or electrically join the circuit and the semiconductor chip together at the time of transfer or after the transfer to obtain a semiconductor device.

[13] A method for manufacturing a semiconductor device, comprising the following steps 4' to 7', wherein steps 4' to 7' are performed in this order: Step 4': A step of preparing a substrate for temporarily fixing a semiconductor chip, and also preparing a circuit-equipped substrate on which a semiconductor chip is planned to be mounted. Step 5': A step of arranging the side on which the semiconductor chip is stacked of the laminate obtained by any of the methods described in [1] to [5] or any of the methods described in [6] to

[11] and the side of the substrate for temporarily fixing the semiconductor chip that catches the semiconductor chip facing each other. Step 6': A step of transferring a semiconductor chip to a substrate for temporarily fixing the semiconductor chip by irradiating a laser beam from the side opposite to the side on which the semiconductor chip is stacked of the laminate obtained by the method for manufacturing the laminate described in any of [1] to [5] or any of [6] to

[11] . Step 7': A step of transferring the semiconductor chip from the substrate on which the semiconductor chip has been transferred to a circuit-equipped substrate on which the semiconductor chip is to be mounted, and optically or electrically joining the circuit and the semiconductor chip together at the time of transfer or after the transfer to obtain a semiconductor device.

[14] A method for manufacturing a semiconductor device according to

[12] , wherein in step 6, a gap is provided between the laminate and the circuit-equipped substrate, and the semiconductor chip is transferred by irradiating a laser beam.

[15] A method for manufacturing a semiconductor device according to

[12] or

[14] , wherein in step 6, the semiconductor chip is transferred by back pressure generated by expanding a resin film or photosensitive resin film with energy from the laser beam.

[16] The method for manufacturing a semiconductor device according to

[13] , wherein in step 6', a gap is provided between the laminate and a substrate for temporarily fixing the semiconductor chip, and the semiconductor chip is transferred by irradiating it with laser light.

[17] The method for manufacturing a semiconductor device according to

[13] or

[16] , wherein in step 6', the semiconductor chip is transferred by back pressure generated by expanding a resin film or a photosensitive resin film with energy from a laser beam.

[0012] According to the present invention, semiconductor chips that are mounted at a fine and high density can be transferred with high positional accuracy regardless of laser misalignment.

[0013] This is a schematic perspective view of an example of the laminate of the present invention. This is a schematic cross-sectional view of an example of the laminate of the present invention. This is a schematic top view of an example of the laminate of the present invention. This is a schematic cross-sectional view showing an example of the laminate of the present invention before semiconductor chips are stacked. This is a schematic side view illustrating an example of a method for obtaining the laminate of the present invention. This is a schematic side view illustrating another example of a method for obtaining the laminate of the present invention. This is a schematic side view illustrating another example of a method for obtaining the laminate of the present invention. This is a schematic side view illustrating another example of a method for obtaining the laminate of the present invention. This is a schematic side view illustrating another example of a method for obtaining the laminate of the present invention. This is a schematic side view illustrating another example of a method for obtaining the laminate of the present invention. This is a schematic side view illustrating an example of a method for obtaining a semiconductor device using the laminate of the present invention.

[0014] The present invention will be described below with specific examples. However, the present invention is not to be interpreted as being limited to these specific examples.

[0015] <Laminate> As illustrated in Figure 1, the laminate of the present invention consists of a substrate (referred to as the "first substrate" for convenience), a resin film, and a semiconductor chip, stacked in this order.

[0016] <First Substrate> The first substrate is preferably a substrate that transmits laser light, and more preferably a substrate whose absorbance at any wavelength between 240 and 400 nm is 0.1 or less. An absorbance of 0.1 or less at any wavelength between 240 and 400 nm means that there is at least one wavelength within the range of 240 to 400 nm that exhibits an absorbance of 0.1 or less. There is no particular limit to this lower limit of absorbance; ideally, it is zero. Examples of substrates having such absorbance include substrates made of inorganic materials such as quartz, sapphire, alkali glass, alkali-free glass, and borosilicate glass. The thickness of the first substrate is not particularly limited as long as the necessary rigidity and handling are obtained; for example, 0.1 mm to 5.0 mm is preferred. From the viewpoint of ease of handling, a substrate thickness of 0.3 mm or more is more preferred. On the other hand, from the viewpoint of availability and versatility, a substrate thickness of 2.0 mm or less is more preferred.

[0017] Furthermore, the first substrate can also be made of organic materials such as aramid, polyester such as polyethylene terephthalate, polypropylene, or cycloolefin. When using an organic substrate, the thickness of the substrate can be selected within a range that does not impair the absorbance, and for example, 0.05 mm to 3.0 mm is preferred. From the viewpoint of ease of handling the substrate, a substrate thickness of 0.1 mm or more is more preferred. On the other hand, a substrate thickness of 1.0 mm or less is more preferred because it can suppress light scattering during laser irradiation.

[0018] <Resin Film> The resin film is a film on which semiconductor chips, described later, are stacked. The resin film has a region where the indentation modulus is 1 MPa or more and 500 MPa or less (for convenience, this region will be called "region α", and the indentation modulus of this region will be called "modulus α"), and a region surrounding this region where the indentation modulus is higher than modulus α (for convenience, this region will be called "region β", and the indentation modulus of this region will be called "modulus β").

[0019] This will be explained using drawings. Figure 2 is a schematic cross-sectional view of an example of the laminate of the present invention, showing that semiconductor chips 14 are stacked on region α (reference numeral 12). Figure 3 is a schematic top view of the laminate of the present invention without showing the semiconductor chips, showing that region α is surrounded by region β. Furthermore, since it is assumed that multiple semiconductor chips will be stacked, it is preferable that multiple regions α are provided and arranged in an orderly manner, for example, in a matrix, as shown in the figures.

[0020] In the laminate of the present invention, the indentation modulus of region α is more preferably 10 MPa or more and 500 MPa or less. A dentation modulus of 10 MPa or more further increases the degree to which the semiconductor chips are not embedded in the resin film, even when laminated by pressure using a vacuum laminator or wafer bonder, and prevents the resin film from adhering to the sides of the semiconductor chips, enabling transfer at low energy. Furthermore, a dentation modulus of 500 MPa or less in region α allows for lamination without damaging the semiconductor chips, even when pressure is applied during lamination onto the resin film. More preferably, the dentation modulus of region α is 30 MPa or more and 300 MPa or less, and even more preferably, 100 MPa or more and 300 MPa or less. A compressive modulus of 30 MPa or higher in region α allows for further reduction of transfer misalignment on the opposing substrate, such as a circuit-equipped substrate, when transferring a semiconductor chip from the laminate of the present invention. A compressive modulus of 300 MPa or lower allows for further improvement of the yield when laminating semiconductor chips onto a resin film.

[0021] The desired indentation modulus can be achieved, for example, by adjusting the weight-average molecular weight of the resin contained in the resin film. From the viewpoint of controlling the modulus, the molecular weight of the resin is preferably between 10,000 and 1,000,000. Increasing the molecular weight of the resin causes the molecular chains of the resin to intertwine, thereby increasing the indentation modulus. Furthermore, from the viewpoint of solubility, the molecular weight of the resin is even more preferably between 10,000 and 100,000.

[0022] The indentation modulus can be measured using a nanoindenter. Specifically, the indentation modulus is measured using a Berkovich indenter (triangular pyramidal diamond indenter, 115° inter-ridge angle) at 30°C, by pressing it perpendicularly from the surface of the resin film toward the first substrate.

[0023] Furthermore, in the resin film, the ratio of elastic modulus α to elastic modulus β, β / α (i.e., elastic modulus β / elastic modulus α), is greater than 1, preferably 2 or more, more preferably 10 or more, and even more preferably 100 or more. A value of β / α greater than 1 allows for the suppression of deformation of region α by region β, thereby reducing the transfer misalignment on the opposing substrate, such as a circuit-equipped substrate, when transferring a semiconductor chip from the laminate of the present invention. This enables transfer to the target circuit board with high positional accuracy, regardless of the misalignment of the laser beam during semiconductor chip transfer. While there are no particular upper limits on β / α, practically speaking, it is 500 or less.

[0024] Furthermore, when measuring the indentation modulus, the modulus α can be measured by removing the semiconductor chips laminated on the resin film. However, there are no restrictions on the method of removing the semiconductor chips as long as it does not affect the modulus of the resin film. Methods such as removing the semiconductor chips by irradiating them with a laser or removing them by applying mechanical stress can be used.

[0025] The formation of the resin film in the laminate of the present invention can be achieved, for example, by coating a resin for region α and a resin for region β using a coating means such as a nozzle coater or an inkjet coater, or by forming a pattern of region β using a photolithography method with a photosensitive resin, and then filling the spaces between the patterns of region β with the resin for region α. ​​However, it is convenient to use a radiation-sensitive resin in which the resin components are crosslinked or polymerized by irradiation with radiation, irradiate the semiconductor chips after lamination with radiation, and use the semiconductor chips as a mask to create the region corresponding to region β. If an electron beam-curable resin is used as the radiation-sensitive resin, it is also possible to pattern region β using an electron gun. It should be noted that region β does not necessarily have to be formed of resin as long as the required elastic modulus can be achieved, but it is convenient to form it with resin.

[0026] Furthermore, as will be described later, the resin film in the laminate of the present invention may contain additives such as ultraviolet absorbers and dyes, from the viewpoint of improving the transferability of semiconductor chips by lasers.

[0027] As described above, various methods can be considered for forming regions α and β. However, in order to simplify the explanation and to describe a preferred embodiment, the following describes a method in which a photosensitive resin is used as the radiation-sensitive resin, and regions α and β are formed by photosensitivity.

[0028] The photosensitive resin preferably used for the resin film of the laminate of the present invention preferably has so-called negative-type curability. That is, it has the property of undergoing crosslinking or polymerization (collectively referred to simply as "curing" hereinafter) when irradiated with light. By using a resin in which an unexposed portion corresponds to region α, the indentation elastic modulus of this region (corresponding to elastic modulus α) is 1 MPa to 500 MPa, an exposed portion corresponds to region β, the indentation elastic modulus of this region corresponds to elastic modulus β, and the value obtained by dividing elastic modulus β by elastic modulus α is 2 or more, regions α and β can be easily produced using a semiconductor chip as a mask, as described later. For designing such a photosensitive resin, materials may be selected such that the indentation elastic modulus of the resin film before exposure corresponds to region α, and the indentation elastic modulus of the resin film after exposure corresponds to region β. Specific examples thereof are as described later. Further, the photosensitive resin may contain other materials such as resins other than the photosensitive resin for the purpose of adjusting the indentation elastic modulus or other purposes.

[0029] <Photosensitive Resin Film> A negative-type photosensitive resin typically contains a photopolymerizable compound and a photopolymerization initiator.

[0030] A photopolymerizable compound refers to a compound that bonds and polymerizes via radicals, acids, or bases generated by exposure or the like, resulting in an increase in molecular weight. From the viewpoint of controlling the indentation elastic modulus, the photopolymerizable compound is preferably contained in an amount of 5 to 40% by mass when the mass of the solid content of the resin composition for forming the resin film is taken as 100% by mass. Further, from the viewpoint of being cured by irradiation with light, the photopolymerizable compound desirably has two or more reactive sites per molecule.

[0031] Examples of such photopolymerizable compounds include esterified products of (meth)acrylic acid and a polyhydric alcohol such as trimethylolpropane tri(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, and polyethylene glycol di(meth)acrylate; polyfunctional urethane (meth)acrylates; epoxy (meth)acrylates; and oligoester (meth)acrylates. Further examples include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate (2-isocyanatoethyl methacrylate), and m-isopropenyl-α-dimethylbenzyl isocyanate. Epoxidized butadiene, glycidyl methacrylate, acrylamide, vinyl siloxane, and low-polymerization-degree polymers (i.e., oligomers) of these may also be used. Here, the term "(meth)acrylate" includes both the meaning of acrylate esters and the meaning of methacrylate esters.

[0032] Use of a photopolymerizable compound having an epoxy group is preferable from the viewpoint of adjusting indentation modulus. Examples of the epoxy group-containing compound include, but are not limited to, bisphenol A-type epoxy resins, bisphenol F-type epoxy resins, propylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, epoxy group-containing silicones such as polymethyl(glycidyloxypropyl)siloxane, and dimer acid-modified epoxy resins. Specific examples include JER (registered trademark) 871 (manufactured by Mitsubishi Chemical Corporation) and Shofree (registered trademark) PETG (manufactured by Showa Denko K.K.).

[0033] The photopolymerizable compound may be used alone or in combination of two or more kinds depending on the desired properties to be utilized.

[0034] Next, a photopolymerization initiator is a compound that promotes crosslinking and polymerization of the photosensitive compound by undergoing bond cleavage, reaction, or structural change upon exposure, thereby generating another compound and imparting negative photosensitivity. Examples of photopolymerization initiators include photoradical polymerization initiators, photoacid generators, and photobase generators. From the viewpoint of controlling the indentation modulus, it is preferable that the photopolymerization initiator be contained in the resin composition for forming the resin film at an amount of 10 to 30% by mass, when the mass of its solid content is 100% by mass.

[0035] Furthermore, depending on the desired properties, one or more types of photopolymerization initiators may be used.

[0036] The aforementioned photoradical polymerization initiator refers to a compound that generates radicals by bond cleavage and / or reaction upon exposure. Examples of such compounds include benzyl ketal compounds, α-hydroxyketone compounds, α-aminoketone compounds, biimidazole compounds, phosphine oxide compounds, oxime ester compounds, acridine compounds, titanocene compounds, benzophenone compounds, acetophenone compounds, aromatic ketoester compounds, and benzoic acid ester compounds. From the viewpoint of suppressing debris and improving positional accuracy, the use of oxime ester compounds is more preferable. Examples of oxime ester compounds include compounds having an oxime ester structure (α-oxime structure) and compounds having an oxime ester carbonyl structure (β-oxime structure).

[0037] The aforementioned photoacid generator refers to a compound that generates acid by bond cleavage and / or reaction upon exposure. Examples of such compounds include ionic compounds and nonionic compounds. As ionic compounds, triorganosulfonium salt compounds are preferred. As nonionic compounds, halogen-containing compounds, diazomethane compounds, sulfone compounds, sulfonic acid ester compounds, carboxylic acid ester compounds, sulfonimide compounds, phosphate ester compounds, or sulfonebenzotriazole compounds are preferred.

[0038] A photobase generator is a compound that generates a base by bond cleavage and / or reaction upon exposure. Examples of such compounds include ionic and nonionic compounds. Preferred ionic compounds include diazabicycloalkene salts, triazabicycloalkene salts, α-ketoquaternary ammonium salts, benzylquaternary ammonium salts, guanidine salts, or biguanide salts. Among these, it is preferable to use compounds having a ketoprofen structure, oxoxanthene structure, benzofuran structure, or naphthalene structure. Preferred nonionic compounds include nitrobenzylcarbamate compounds, anthracenylcarbamate compounds, benzoin-based carbamate compounds, anthraquinone-based carbamate compounds, hydroxycinnamamide compounds, or coumarinamide compounds.

[0039] <Other Resins> From the viewpoint of preventing debris, the resin film of the laminate of the present invention preferably contains one or more resins selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, polyamideimide, polyamideimide precursor, polyamide, polysiloxane, silicone resin, maleimide resin, maleimide-styrene resin, maleimide-triazine resin, maleimide-oxazine resin, phenol resin, polyhydroxystyrene, phenol group-containing epoxy resin, phenol group-containing acrylic resin, acrylic resin, polycyclic side chain-containing resin, acid-modified epoxy resin, urethane resin, epoxy resin, and copolymers thereof. In particular, it is preferable to contain one or more resins selected from the group consisting of polyimide, polybenzoxazole and their precursors and copolymers thereof (hereinafter collectively referred to as "the polyimide-based resin").

[0040] When using a resin having a ring structure, such as polyimide, as the resin contained in the resin film, it is easy to adjust the desired indentation modulus by adjusting the ring closure rate. When a ring structure is formed by ring closure, the ring closure rate of the resin is preferably 50% to 100% from the viewpoint of indentation modulus, and more preferably 80% to 100% from the viewpoint of resin stability.

[0041] From the viewpoint of controlling the indentation modulus of the resin film, this polyimide-based resin is preferably contained in a resin composition for forming the resin film at a concentration of 50 to 80% by mass, when the mass of its solid content is considered as 100% by mass. Furthermore, from the viewpoint of controllability of the indentation modulus, it is more preferably contained at a concentration of 60 to 70% by mass.

[0042] In this polyimide-based resin, polyimide and polybenzoxazole are resins having a cyclic structure of an imide ring or an oxazole ring in their main chain structure. Furthermore, their precursors, polyimide precursors and polybenzoxazole precursors, are resins that form an imide ring or benzoxazole ring structure by dehydration and cyclization. Polyimide can be obtained by reacting tetracarboxylic acid, the corresponding tetracarboxylic dianhydride, or tetracarboxylic diester dichloride with diamine, the corresponding diisocyanate compound, or trimethylsilylated diamine, and it is preferable that it has tetracarboxylic acid residues and diamine residues. For example, polyimide can be obtained by dehydration and cyclization of polyamic acid, one of the polyimide precursors obtained by reacting tetracarboxylic dianhydride and diamine, through heat treatment. During this heat treatment, a solvent that forms an azeotrope with water, such as m-xylene, can also be added. Alternatively, it can be obtained by dehydration and cyclization through chemical heat treatment with the addition of a dehydration condensing agent such as a carboxylic acid anhydride or dicyclohexylcarbodiimide, or a cyclization catalyst such as a base such as triethylamine. Alternatively, it can be obtained by adding a weakly acidic carboxylic acid compound and dehydrating and cyclizing the compound by heat treatment at a low temperature of 100°C or below. Furthermore, polybenzoxazoles can be obtained by reacting a bisaminophenol compound with a dicarboxylic acid, a corresponding dicarboxylic acid chloride, or a dicarboxylic acid active ester, and it is preferable that they have a dicarboxylic acid residue and a bisaminophenol residue. For example, polybenzoxazoles can be obtained by dehydrating and cyclizing a polyhydroxyamide, which is one of the polybenzoxazole precursors obtained by reacting a bisaminophenol compound with a dicarboxylic acid, by heat treatment. Alternatively, they can be obtained by adding phosphoric anhydride, a base, a carbodiimide compound, etc., and dehydrating and cyclizing the compound by chemical treatment.

[0043] The polyimide-based resin preferably has one or more structures selected from the group consisting of a dialkylsiloxane structure represented by formula (1), an alkylene glycol structure represented by formula (2), and an alkylene structure represented by formula (3). This is preferable because it allows the resin film to have a strong and flexible structure, facilitates blister formation during laser irradiation, and is also preferable from the viewpoint of controlling the adhesion and indentation modulus of the semiconductor chip laminated on region α.

[0044]

[0045] In formulas (1) to (3), R １ and R ２ Each independently represents an alkyl group having 1 to 20 carbon atoms which may have substituents, an alkoxy group having 1 to 20 carbon atoms which may have substituents, or a phenyl group having 6 to 20 carbon atoms which may have substituents, R ３ ~R ６ Each of the following independently represents a hydrogen atom or an organic group having 1 to 20 carbon atoms: l, m, and n each independently represent an integer from 1 to 80; and p represents an integer from 1 to 5. Furthermore, from the viewpoint of controllability of the indentation modulus, it is preferable that l, m, and n each independently be an integer from 1 to 60, and more preferably an integer from 1 to 40.

[0046] Specifically, examples of monomers for obtaining the polyimide resin having one or more structures selected from the group consisting of structures represented by formulas (1), (2), and (3) above include: aliphatic diamines such as diamines containing polyethylene oxide groups, such as Jeffermin® KH-511, Jeffermin® ED-600, Jeffermin® ED-900, and polyoxypropylenediamines D-400 and D-2000 (manufactured by Huntsman Japan Co., Ltd.); diamines having polyalkylene oxide groups, such as Elastomer® 250P, Elastomer® 1000P, and Porea® SL100A (manufactured by Kumiai Chemical Industry Co., Ltd.); and siloxanediamines with propylamine terminology, such as LP-7100, KF-8010, KF-8012, and X22-161A (manufactured by Shin-Etsu Chemical Co., Ltd.).

[0047] <Additives such as UV absorbers> The resin film of the laminate of the present invention may preferably contain additives such as UV absorbers and dyes. Examples of additives contained in the resin film include UV absorbers such as Tinuvin 400, Tinuvin 477, Tinuvin 479 (manufactured by BASF Japan Ltd.) and DAINSORB (manufactured by Yamato Kasei Co., Ltd.), and dyes such as Violet 36 (manufactured by Tokyo Chemical Industry Co., Ltd.). These additives may be contained in the resin film as one type or as a combination of types. The inclusion of these additives is preferable because it increases the absorbance of the resin film and reduces the energy required to transfer the semiconductor chip with a laser. The additive content is preferably 0.1 parts by mass or more per 100 parts by mass of the resin film, and preferably 50 parts by mass or less from the viewpoint of stability in the varnish state before forming the laminate.

[0048] <Method for producing a photosensitive resin film> For example, a resin composition for forming a resin film as a varnish can be obtained by dissolving a photopolymerizable compound, a photopolymerization initiator, and, if necessary, other resins and additives such as the polyimide-based resin in a solvent. There are no particular restrictions on the solvent, and known solvents can be used. For example, N-methyl-2-pyrrolidone, N,N-dimethylformamide, N,N-dimethylacetamide, N,N-dimethylisobutylamide, 3-methoxy-N,N-dimethylpropionamide, 3-butoxy-N,N-dimethylpropionamide, γ-butyrolactone, ethyl lactate, 1,3-dimethyl-2-imidazolidinone, N,N'-dimethylpropylene urea, 1,1,3,3-tetramethylurea, dimethyl sulfoxide, sulfolane, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diethylene glycol ethyl methyl ether, diethylene glycol dimethyl ether, cyclohexanone, cyclopentanone, water, or reaction solvents described in International Publication No. 2017 / 099183 can be used alone or in combination of two or more.

[0049] Methods for dissolving the composition (varnish) include stirring and heating, and stirring is usually performed at room temperature to 80°C. Furthermore, the order in which the raw materials are dissolved is not particularly limited; for example, compounds with lower solubility can be dissolved sequentially. The varnish obtained by these manufacturing methods is preferably filtered using a filtration filter to remove foreign matter such as debris.

[0050] Next, a method for manufacturing a resin film using a photosensitive resin according to an embodiment of the present invention will be described. An example of a method for manufacturing a resin film will be described. A varnish of a photosensitive resin composition prepared by the method described above or the like is applied to a first substrate 11, and the solvent is removed by heating to produce an unexposed resin film 15 (see Figure 4). When producing an unexposed resin film by a coating method, any coating method can be selected, including rotary coating using a spinner, spray coating, roll coating, and slit die coating. The unexposed resin film obtained by coating the photosensitive resin composition is preferably dried for 1 minute to several tens of minutes at a temperature in the range of 50°C to 150°C using a hot plate, drying oven, infrared rays, etc.

[0051] The thickness of the unexposed resin film formed on the first substrate is preferably 10 to 30 μm. A film thickness of 10 μm or more prevents the film from rupturing when irradiated with a laser, allowing for blister formation. Furthermore, a film thickness of 30 μm or less allows the back pressure generated by laser irradiation to be easily transmitted to the semiconductor chip, thus avoiding the need for excessive laser energy.

[0052] The thickness of the resin film can be measured using a scanning electron microscope, optical film thickness gauge, step gauge, laser microscope, etc.

[0053] Next, as a method for exposing the portion corresponding to the region β in an unexposed photosensitive resin film, for example, a method of performing exposure using an exposure apparatus such as a stepper, a scanner, a mirror projection mask aligner (MPA), or a parallel light mask aligner (PLA) may be mentioned. The maximum wavelength of the active actinic radiation is preferably 180 nm or more, more preferably 200 nm or more, still more preferably 240 nm or more, even more preferably 300 nm or more, and particularly preferably 340 nm or more. On the other hand, the maximum wavelength of the active actinic radiation is preferably 450 nm or less, more preferably 420 nm or less, and still more preferably 400 nm or less. The active actinic radiation is preferably j-line from a mercury lamp (wavelength: 313 nm), i-line from a mercury lamp (wavelength: 365 nm), h-line from a mercury lamp (wavelength: 405 nm), or g-line from a mercury lamp (wavelength: 436 nm, and a mixed line of i-line, h-line, and g-line from a mercury lamp is more preferable. The active actinic radiation is also preferably ArF laser (wavelength: 193 nm), KrF laser (wavelength: 248 nm), XeCl laser (wavelength: 308 nm), XeF laser (wavelength: 351 nm), or YAG laser (wavelength: 266 nm, wavelength: 355 nm, or wavelength: 532 nm). The exposure amount of the active actinic radiation, expressed as an i-line illuminance value, is 10 mJ / cm ２ or more is preferable, and 50 mJ / cm ２ or more is more preferable, and 100 mJ / cm ２ or more is still more preferable, and 200 mJ / cm ２ or more is even more preferable, and 300 mJ / cm ２ or more is particularly preferable. On the other hand, the exposure amount, expressed as an i-line illuminance value, is 3,000 mJ / cm ２ or less is preferable, and 2,000 mJ / cm ２ or less is more preferable, and 1,500 mJ / cm ２ or less is still more preferable, and 1,000 mJ / cm ２ or less is even more preferable, and 500 mJ / cm ２ or less is particularly preferable.

[0054] One preferred embodiment for obtaining the laminate of the present invention is a method for manufacturing a laminate that includes the following steps 1 to 3, and performs steps 1 to 3 in this order, satisfying the following conditions 1 and 2. Step 1: A step of applying a radiation-sensitive resin to a substrate in which components contained in the irradiated area are crosslinked or polymerized by irradiation with radiation, thereby forming a radiation-sensitive resin film. Step 2: A step of laminating a semiconductor chip on the surface of the radiation-sensitive resin film formed on the substrate. Step 3: A step of irradiating the radiation-sensitive resin film formed on the substrate with radiation from the side of the semiconductor chip. Condition 1: In the radiation-sensitive resin film after irradiation with radiation, the indentation modulus of the area where the semiconductor chip is mounted is 1 MPa or more and 500 MPa or less. Condition 2: In the radiation-sensitive resin film after irradiation with radiation, the value obtained by dividing the indentation modulus (MPa) of the area where the semiconductor chip is mounted by the indentation modulus (MPa) of the area where the semiconductor chip is mounted is 2 or more.

[0055] Preferably, step 2 is carried out in the following order: Step 2-1: A step of preparing a semiconductor chip-equipped substrate on which a semiconductor chip is mounted. Step 2-2: A step of arranging the radiation-sensitive resin film side of the radiation-sensitive resin film-equipped substrate obtained in step 1 and the side of the semiconductor chip-equipped substrate on which the semiconductor chip is mounted facing each other. Step 2-3: A step of transferring the semiconductor chip mounted on the semiconductor chip-equipped substrate onto the radiation-sensitive resin film of the radiation-sensitive resin film-equipped substrate.

[0056] As explained above, in the following description, a preferred example of the present invention will be given in which a photosensitive resin film is used as the radiation-sensitive resin film.

[0057] Step 1 is as described above with reference to Figure 4, and can be described as a method of applying a photosensitive resin composition onto a first substrate to form a photosensitive resin film.

[0058] Next, as shown in Figure 5, step 2 involves mounting a semiconductor chip onto the photosensitive resin film on the unexposed resin film side of the substrate with the unexposed resin film obtained in step 1 using a flip-chip device or the like.

[0059] Furthermore, another embodiment of step 2 is that it can be carried out by steps 2-1 to 2-3 described above.

[0060] Next, these will be explained with reference to Figures 6 through 10 as appropriate.

[0061] In step 2-1, a semiconductor chip-equipped substrate 300 is prepared. The semiconductor chip-equipped substrate may be configured such that the semiconductor chip is directly mounted on the substrate 31 (sometimes referred to as the "second substrate" for convenience) (Figures 6, 7, and 10), or it may be configured such that the semiconductor chip is mounted via an adhesive layer 32 (Figures 8 and 9).

[0062] In steps 2-3, the process of transferring the semiconductor chip mounted on the semiconductor chip-equipped substrate 300 onto the unexposed resin film 15 formed in step 1 can be performed by pressing the photosensitive resin film and the substrate on which the semiconductor chip is mounted together, as shown in Figures 7, 8, and 10, and then peeling off the second substrate by a mechanical method or by laser irradiation; or by bringing the unexposed resin film 15 and the semiconductor chip 14 into contact or leaving a gap between them, and then using laser light to break the bond between the second substrate and the semiconductor chip and transfer the semiconductor chip onto the photosensitive resin film of the substrate, as shown in Figures 6 and 9. When transferring the semiconductor chip with a gap, it is preferable that the distance between the surface of the photosensitive resin film and the semiconductor chip be 20 μm or more and 100 μm or less. By creating a gap between the surface of the photosensitive resin film and the semiconductor chip and performing the transfer, it becomes easier to transfer the semiconductor chip at a different spacing (pitch) than the spacing (pitch) between the semiconductor chips mounted on the semiconductor chip substrate 300, which is preferable. Furthermore, it is preferable in that the transfer can be performed without being affected by foreign matter on the transfer film or other semiconductor chips already mounted.

[0063] In these cases, if the exposure to form region β is performed at a later stage after the semiconductor chip has come into contact with the photosensitive resin film on the photosensitive resin film-attached substrate, the semiconductor chip itself will function as a mask, allowing for accurate formation of region β. Figures 7 and 10 show examples where region β is formed by exposure before the second substrate is peeled off, while Figures 6, 8, and 9 show examples where region β is formed by exposure after the second substrate is peeled off.

[0064] Furthermore, when removing the semiconductor chip from the second substrate, mechanical or laser removal is preferred, and in the latter case, it is preferable to irradiate only the junction with the semiconductor chip with a laser to remove the semiconductor chip.

[0065] The laser output used is 400 mJ / cm². ２ Above, 800mJ / cm ２ The following are preferable.

[0066] Among the examples described in Figures 6 to 10, the embodiment shown in Figure 6 is preferred.

[0067] <Semiconductor Chips> In the laminate of the present invention, the semiconductor chips to be stacked are not particularly limited as long as they function as semiconductor elements when optically or electrically connected to the circuit board. Examples include semiconductors such as GaN, AlN, InN, InP, GaAs, Si, and SiC that have been made into elements and then separated into individual pieces. More specific examples include those having one or more elements such as transistors, diodes, and light-emitting diodes, and having an appearance close to that of a rectangular parallelepiped. Specifically, examples include micro-LED chips, mini-LED chips, power transistor chips, logic chips, and memory chips. These semiconductor chips also include those in which electrode materials, wiring layers, etc., are stacked.

[0068] The semiconductor chip preferably has dimensions of 5 μm or more and 5.0 mm or less on each side (length and width). More preferably, it is 3.0 mm or less. This allows the laser to be focused and the spot diameter to be reduced, enabling transfer with high positional accuracy. Furthermore, the thickness of the semiconductor chip is preferably 0.1 μm or more. A thickness of 0.1 μm or more helps to avoid damage during the transfer process.

[0069] The surface density of semiconductor chips mounted on the semiconductor chip-equipped laminate, which is equipped with the aforementioned semiconductor chips, is 5 chips / cm². ２ Preferably, the number is 50 or more, and more preferably 50 / cm ２ That concludes the explanation. By increasing the surface density of semiconductor chips above the lower limit mentioned above, the throughput improvement effect achieved by using laser transfer becomes greater. Furthermore, because the laser can be precisely irradiated onto each individual semiconductor chip, the number of semiconductor chips mounted on the second stack can reach 500,000 chips / cm². ２ The following is preferable, and more preferably 100,000 pieces / cm² ２ The following applies:

[0070] <Semiconductor Device> In this invention, a semiconductor device refers to a device in which multiple semiconductor chips are optically or electrically connected to a circuit-equipped substrate. For example, a microLED display is a semiconductor device in which multiple microLED chips, which are semiconductor chips, are arranged on a drive substrate, and it displays an image by individually controlling and lighting up the microLED chips. Also, a semiconductor package called 2.5D or 3D is a semiconductor device that incorporates multiple logic chips or memory chips, which are semiconductor chips, and is used in advanced technologies such as generation AI and advanced driver assistance systems. In this way, by incorporating multiple semiconductor chips, a semiconductor device can realize a wider range of functions compared to a single semiconductor chip.

[0071] <Manufacturing Method for Semiconductor Devices> Next, we will explain the manufacturing method for semiconductor devices.

[0072] A first aspect of the method for manufacturing a semiconductor device according to an embodiment of the present invention includes the following steps 4 to 6, which are performed in this order.

[0073] Step 4: The process of preparing a circuit board on which semiconductor chips are to be mounted.

[0074] Step 5: A step of arranging the laminate, or the laminate obtained by the method for manufacturing the laminate, with the side on which the semiconductor chips are stacked facing the side of the circuit-equipped substrate on which the semiconductor chips are mounted.

[0075] Step 6: A step of irradiating the laminate or the laminate obtained by the method for manufacturing the laminate with a laser beam from the side opposite to the side on which the semiconductor chips are stacked, to transfer the semiconductor chips to the circuit-equipped substrate, and to optically or electrically bond the circuit and the semiconductor chips together at the time of transfer or after the transfer to obtain a semiconductor device.

[0076] In other words, the method described herein involves directly transferring a semiconductor chip from the laminate of the present invention to a circuit-equipped substrate to obtain a semiconductor device. In the laminate of the present invention, region β surrounds region α on which the semiconductor chip is stacked. Therefore, when a laser beam is irradiated from the side of the laminate of the present invention opposite to the side on which the semiconductor chip is mounted during transfer, the stress for transfer generated is controlled by region β and directed towards the circuit-equipped substrate, resulting in high positional accuracy in the transfer of the semiconductor chip. This allows the semiconductor chip to be mounted in the desired location, thus achieving a high yield. Known methods can be used for optically or electrically bonding the semiconductor chip to the circuit-equipped substrate. Furthermore, the transfer of the semiconductor chip is performed while adjusting its position to match the actual mounting location of the semiconductor chip in the semiconductor device being manufactured. In this case, alignment marks may be provided on the laminate of the present invention or the circuit-equipped substrate for transfer position alignment.

[0077] Furthermore, the laser light used during semiconductor chip transfer preferably has a wavelength of 248 nm, 266 nm, 308 nm, or 355 nm, and it is particularly preferable to use a wavelength in which the absorbance in region α is 0.4 or higher. Using such laser light can reduce damage to the semiconductor chip. In addition, even tiny semiconductor chips such as μLEDs can be accurately transferred. Excimer lasers and YAG lasers are particularly preferred as laser light of 248 nm, 266 nm, 308 nm, or 355 nm.

[0078] Furthermore, if the spot size of the laser beam used during semiconductor chip transfer is large enough to hit adjacent semiconductor chips, it is also possible to irradiate the laser through a photomask. The laser beam can be selected at any energy density. From the standpoint of the stability of the laser beam's energy density, the energy density is set at 1 mJ / cm². ２ The above is preferable, and from the viewpoint of preventing damage to the semiconductor chip and shortening the processing time, 1000 mJ / cm² is preferred. ２ The following is preferable. More preferably, the energy density of the laser light is 10 mJ / cm². ２ Above, 500mJ / cm ２ The following applies:

[0079] Furthermore, in step 6, it is preferable that the semiconductor chip is transferred by the back pressure generated by expanding the resin film or photosensitive resin film with energy from laser light irradiation. Transferring the semiconductor chip by the back pressure caused by the expansion of the resin film is preferable because it enables a transfer without generating debris.

[0080] As the circuit board, known types such as TFT boards and printed circuit boards can be used.

[0081] A second embodiment of the method for manufacturing a semiconductor device according to an embodiment of the present invention includes the following steps 4' to 7', performed in this order: Step 4': A step of preparing a substrate for temporarily fixing a semiconductor chip, and a step of preparing a circuit-equipped substrate on which a semiconductor chip is planned to be mounted. Step 5': A step of arranging the laminate, or the laminate obtained by the method for manufacturing the laminate, with the side on which the semiconductor chip is stacked facing the side of the substrate for temporarily fixing the semiconductor chip that catches the semiconductor chip. Step 6': A step of irradiating the laminate, or the laminate obtained by the method for manufacturing the laminate, with laser light from the side opposite to the side on which the semiconductor chip is stacked to transfer the semiconductor chip to the substrate for temporarily fixing the semiconductor chip. Step 7': A step of transferring the semiconductor chip from the substrate on which the semiconductor chip has been transferred to the circuit-equipped substrate on which the semiconductor chip is planned to be mounted, and optically or electrically joining the circuit and the semiconductor chip together at the time of transfer or after the transfer to obtain a semiconductor device.

[0082] In other words, in this embodiment, a semiconductor chip is transferred from the laminate of the present invention to a substrate for temporarily fixing the semiconductor chip (hereinafter sometimes simply referred to as the "temporary fixing substrate"), and the semiconductor chip transferred to the temporary fixing substrate is transferred to a circuit-equipped substrate to obtain a semiconductor device.

[0083] This will be explained using Figure 11.

[0084] In this embodiment of the semiconductor device manufacturing method, a temporary fixing substrate is prepared. The temporary fixing substrate has a layer 42 (for convenience, referred to as the "catch layer") on a substrate 41 (for convenience, referred to as the "third substrate") for receiving a semiconductor chip. The third substrate is preferably a glass substrate, and the materials mentioned in the description of the first substrate can be preferably used. The catch layer is not particularly limited as long as it can receive the semiconductor chip without damage and transfer the semiconductor chip to the circuit board, but it is preferably made of a resin such as polysiloxane resin, acrylic resin, or polyester resin. When transferring the semiconductor chip from the temporary fixing substrate 400 on which the semiconductor chip is temporarily fixed to the circuit board using laser light, it is preferable that the catch layer contains a dye that absorbs laser light. The thickness of the catch layer depends on the size of the semiconductor chip, but a range of 0.5 to 100 μm is appropriate.

[0085] In step 5', the laminate of the present invention or the laminate obtained by the manufacturing method of the present invention is positioned so that the side on which the semiconductor chips are laminated and the catch layer side of the temporary fixing substrate are parallel to each other. To prevent misalignment of the semiconductor chip 14 due to its own weight during transfer, it is preferable to arrange the laminate 100 of the present invention and the temporary fixing substrate so that the laminate 100 of the present invention is on top. The laminate 100 of the present invention and the catch layer 42 are arranged with a certain distance between them. The distance (clearance) between the surface of the semiconductor chip in the laminate of the present invention and the catch layer 42 can be selected depending on the size and thickness of the semiconductor chip, and can be selected in the range of several μm to several hundred μm, for example.

[0086] In the laminate of the present invention, region β surrounds region α on which semiconductor chips are stacked. Therefore, when a laser beam is irradiated from the side of the laminate of the present invention opposite to the side on which the semiconductor chips are mounted during transfer, the stress for transfer generated is controlled by region β and directed towards the temporary fixing substrate, thus enabling transfer of the semiconductor chips with high positional accuracy. This allows the semiconductor chips to be mounted at the desired location on the temporary fixing substrate, and improves the positional accuracy of the semiconductor chip transfer in the subsequent process (step 7').

[0087] Furthermore, alignment marks can preferably be provided on the laminate and temporary fixing substrate of the present invention for transfer alignment.

[0088] In step 6', laser light 71 is irradiated onto the semiconductor chip 14 from the side of the first substrate 11 of the laminate 100 of the present invention. Examples of laser light types include solid-state lasers such as YAG lasers, YVO4 lasers, fiber lasers, and semiconductor lasers, and gas lasers such as carbon dioxide lasers, excimer lasers, and argon lasers, which can be selected depending on the wavelength used. The beam shape of the irradiated laser light is not limited, and the laser spot size may be smaller than the size of the semiconductor chip. However, the size should be such that the laser light does not hit semiconductor chips adjacent to the semiconductor chip to be transferred.

[0089] Furthermore, if the spot size of the laser beam used during semiconductor chip transfer is large enough to hit adjacent semiconductor chips, it is also possible to irradiate the laser through a photomask. The laser beam can be selected at any energy density. From the standpoint of the stability of the laser beam's energy density, the energy density is set at 1 mJ / cm². ２ The above is preferable, and from the viewpoint of preventing damage to the semiconductor chip and shortening the processing time, 1000 mJ / cm² is preferred. ２ The following is preferable. More preferably, the energy density of the laser light is 10 mJ / cm². ２ Above, 500mJ / cm ２ The following applies:

[0090] Furthermore, when transferring the semiconductor chip, it is also possible to heat the side of the third substrate 41 of the temporary fixing substrate. Heating is preferable because it softens the resin of the catch layer 42, improving the retention of the transferred semiconductor chip. When heating the third substrate, it is preferable that the heating temperature be 120°C or lower in order to prevent warping of the third substrate due to heat and to enable transfer with good positional accuracy.

[0091] Furthermore, in step 6', it is preferable that the semiconductor chip is transferred by the back pressure generated when the resin film or photosensitive resin film is expanded by the energy from laser light irradiation. This is preferable because it enables a transfer without generating debris, as the semiconductor chip is transferred by the back pressure shock caused by the expansion of the resin film.

[0092] Furthermore, while maintaining the opposing state of the laminate of the present invention and the temporary fixing substrate, the relative positional relationship between the two may be changed, particularly by sliding them in a direction parallel to the surface of the catch layer, to transfer the semiconductor chip. By performing such an operation, the semiconductor chip can be transferred onto the temporary fixing substrate at a different spacing than the semiconductor chips laminated on the laminate of the present invention, or to any position on the temporary fixing substrate. In this case, it is preferable to ensure a clearance between the laminate of the present invention and the temporary fixing substrate such that they do not come into contact during movement.

[0093] When transferring semiconductor chips to a temporary fixing substrate, it is preferable to adjust the position to match the actual mounting location of the semiconductor chips in the semiconductor device to be manufactured later. For example, when manufacturing an LED substrate, the transfer can be performed while shifting the pitch of the LED elements to match the pixel size of the LEDs and the arrangement of RGB. Once such a temporary fixing substrate is obtained, a semiconductor device with semiconductor chips (e.g., LED elements) mounted can be easily manufactured by pressing the temporary fixing substrate with the temporarily fixed semiconductor chips onto a circuit board as a step corresponding to step 7'. Furthermore, by using the laminate of the present invention, it is possible to obtain a temporary fixing substrate with semiconductor chips that are arranged with high positional accuracy and temporarily fixed, so that the positional accuracy in the transfer to the circuit board can also be increased, and thus mounting defects caused by positional misalignment in the semiconductor device can be reduced.

[0094] In the semiconductor device manufacturing method of the present invention, the laser light preferably has a wavelength of 248 nm, 266 nm, 308 nm, or 355 nm, and it is particularly preferable to use a wavelength such that the absorbance of the cured film is 0.4 or higher. By using these laser lights, damage to the semiconductor chip can be reduced. Furthermore, even minute semiconductor chips such as μLEDs can be accurately transferred. Among the 248 nm, 266 nm, 308 nm, and 355 nm laser lights, excimer lasers and YAG lasers are particularly preferred.

[0095] As the circuit board, known types such as TFT boards and printed circuit boards can be used.

[0096] The present invention will be described below with reference to examples, but the present invention is not intended to be limited to these examples. First, the evaluation method will be explained.

[0097] (1) Preparation of a laminate with stacked semiconductor chips A varnish prepared by the method described below was applied to a 4-inch quartz glass substrate with a thickness of 0.6 mm (manufactured by Daiko Seisakusho Co., Ltd., with absorbance of 0.01 at wavelengths of 248 nm, 266 nm, 308 nm, and 355 nm) using a spinner, and finally the temperature was lowered to room temperature to prepare a film of a photosensitive resin composition on the glass substrate, thereby obtaining a laminate with a photosensitive resin film formed on the glass substrate (hereinafter referred to as "laminated body 1" for convenience).

[0098] Pre-baking conditions: 120°C for 3 minutes. The film thickness after pre-baking was measured using a laser microscope (Keyence Corporation, VK-9510).

[0099] Next, a 4-inch LED substrate (manufactured by EPILEDS, with alignment marks) was prepared and cut into 20 mm squares using a dicer to obtain a substrate with a semiconductor chip. The LEDs mounted are as follows. The size of the semiconductor chip, the size of the protruding electrode portion, and the distance between adjacent elements were measured using a scanning electron microscope (Hitachi High-Tech Corporation, S-4800).

[0100] Crystal growth substrate: Sapphire (thickness 0.8 mm) Semiconductor chip type: GaN Semiconductor chip size: 19.2 μm × 37.5 μm × 7.6 μm (including electrode part) Number of electrode parts: 2 on one side Electrode part size: 17.5 μm × 11.0 μm × 3.4 μm Electrode part type: Gold Distance between adjacent LEDs: 10.0 μm The side of the laminate 1 on which the photosensitive resin film is formed and the side of the semiconductor chip-attached substrate on which the semiconductor chip is mounted were brought into contact and superimposed, and bonded using a flip-chip bonder (Toray Engineering Co., Ltd., FC-3000WS) by applying pressure of 57.8 kN, 80°C, for 2 minutes. After that, a 266 nm wavelength laser device (HOYA Corporation, HSL-5500III SUV, pulse width 5-7 nsec, energy density 600 mJ / cm²) was applied from the side of the quartz glass substrate of the laminate 1. ２ A laser was used to irradiate the semiconductor chip, separating the crystal growth substrate at the interface between the semiconductor chip and the substrate with the semiconductor chip attached. The semiconductor chip was then laminated onto a photosensitive resin film to obtain a laminate with the semiconductor chips (hereinafter referred to as "laminated body 2" for convenience).

[0101] Next, using a double-sided alignment single-sided exposure apparatus (mask aligner PEM-6M; manufactured by Union Optical Co., Ltd.), a mixed beam of i-line (wavelength 365 nm), h-line (wavelength 405 nm), and g-line (wavelength 436 nm) from an ultra-high pressure mercury lamp was irradiated from the side of the laminate 2 on which the semiconductor chips were stacked, exposing all parts except those masked by the semiconductor chips, thereby obtaining a laminate with the exposed semiconductor chips stacked on top of it (hereinafter referred to as "laminated laminate 3" for convenience).

[0102] (2) Using a YAG laser with a wavelength of 355 nm (HSL-5500IIIST, manufactured by HOYA Corporation), the indentation modulus laminate 3 is subjected to an intensity such that the indentation modulus of regions α and β is not impaired (in this example, an energy density of 2000 mJ / cm² from the semiconductor chip side). ２The semiconductor chip was removed by irradiating it with laser light (using a laser), cut into pieces 10 mm wide x 10 mm long, and fixed to a sample fixing stand using adhesive (Aron Alpha Fast-Acting Multipurpose; manufactured by Toagosei Co., Ltd.). Subsequently, the indentation modulus was measured for the portion corresponding to the exposed area (corresponding to region β in this invention) and the portion corresponding to the unexposed area (i.e., the portion where the semiconductor chip was stacked; corresponding to region α in this invention). The indentation modulus was measured using a nanoindenter (Triboindenter TI950; manufactured by Hystron). The measurement was performed using an indentation load / unload test in which a Berkovich indenter (triangular pyramidal diamond indenter) was pressed from the surface of each measurement area towards the quartz glass substrate and then unloaded, and the indentation modulus was measured under the following measurement conditions. Load-indentation depth diagrams were obtained from the surface of each measurement point to a depth of 10-20 nm, and the indentation modulus was determined from the slope of the tangent to the load-displacement curve at the start of the unloading process. Three measurement points were taken for each measurement point, and the arithmetic mean was used as the indentation modulus for each measurement point. The modulus β was divided by the modulus α, and β / α was calculated by rounding to the first decimal place. Measurements for the unexposed area were taken near the center of gravity of the semiconductor chip contact surface, and measurements for the exposed area were taken near the midpoint between the locations where the semiconductor chips were stacked. In the table, if β / α is less than 0.5, it is indicated as "<1". <<Indentation Modulus Measurement Conditions>> Measurement environment: 30°C, atmospheric pressure, air atmosphere Measurement frequency: 100 Hz Measurement method: Continuous stiffness measurement method.

[0103] (3) Transfer test of semiconductor chip (3-1) Preparation of temporary fixing substrate A 4-inch alkali-free glass substrate (Eagle XG, Corning Corporation) with a thickness of 0.5 mm was coated with a diluted solution prepared by diluting polydimethylsiloxane with toluene so that the mass ratio of polydimethylsiloxane to toluene was 1:3, using a spinner, and heated on a hot plate at 120°C for 3 minutes to form a catch layer on the glass substrate. The thickness of the catch layer after heat curing was measured with an optical film thickness gauge (Lambda Ace, Dainippon Screen Co., Ltd., refractive index = 1.543), and a temporary fixing substrate with a catch layer thickness of 5.0 μm was prepared.

[0104] (3-2) The semiconductor chip transfer laser light source, the laminate 3, and the temporary fixing substrate were arranged in this order so that the temporary fixing substrate was at the bottom. At this time, the surface of the laminate 3 on which the semiconductor chips are stacked and the surface of the temporary fixing substrate on which the catch layer is formed were held facing each other, with the distance between the surface of the semiconductor chip and the surface of the catch layer (indicated as "clearance" in the table) as shown in the table. The laser spot size was set to a square shape of 26 μm × 44 μm, and the positions of the laser light source and the laminate 3 were adjusted so that the center of the laser spot and the center of one semiconductor chip were separated by 2 μm in both the vertical and horizontal directions, and adjustments were made so that the laser light did not hit adjacent semiconductor chips on the laminate 3. A YAG laser with a wavelength of 355 nm (HOYA Corporation, HSL-5500IIIST) was used as the laser light source. The energy density for the semiconductor chip placed at the laser irradiation position was 200 mJ / cm². ２ 300 mJ / cm ２ 400 mJ / cm ２ The irradiation was performed while varying the energy density. Laser transfer tests were conducted on 20 semiconductor chips at each energy density.

[0105] (3-3) Evaluation of Positional Accuracy The temporary fixed substrate on which the semiconductor chip was transferred and temporarily fixed after laser irradiation, as obtained in the evaluation of "(3-2) Transfer of Semiconductor Chip" above, was observed, and the positional accuracy was evaluated using the following method. Specifically, using a CCD camera projected from a lens installed coaxially with the laser light source, images of the semiconductor chip on the laminate 3 before laser transfer and images of the semiconductor chip on the temporary fixed substrate on which the semiconductor chip was transferred and temporarily fixed after laser transfer were acquired, and the amount of positional displacement of the center of the semiconductor chip before and after transfer was calculated from the center coordinates of the semiconductor chip in each acquired image. The amount of positional displacement was calculated only for semiconductor chips that were transferred without being rotated or inverted, and the positional accuracy was evaluated based on the average value. An average value of 0 μm or more and less than 1.5 μm was judged as "a", 1.5 μm or more and less than 2 μm as "b", 2 μm or more and less than 3 μm as "c", and 3 μm or more as "d". The average value of the positional displacement was determined by rounding to the second decimal place.

[0106] (3-4) Debris Evaluation The temporary fixed substrate on which the semiconductor chip, obtained in the evaluation of "(3-2) Semiconductor Chip Transfer" above, was transferred and temporarily fixed was observed, and debris was evaluated. Specifically, a CCD camera was set up so that the optical axis from the laser light source to the sample and the optical axis from the center of the CCD sensor to the lens were coaxial, and an image of the semiconductor chip on the temporary fixed substrate after semiconductor chip transfer was acquired. If debris was observed on the semiconductor chip it was evaluated as "present," and if no debris was observed it was evaluated as "absent."

[0107] The raw materials, additives, and solvents used are as follows: CHN: Cyclohexanone (manufactured by Toyo Gosei Kogyo Co., Ltd.) Light Ester EG: Ethylene glycol dimethacrylate (manufactured by Kyoeisha Chemical Co., Ltd.), equivalent to a photopolymerizable compound with two vinyl groups in the molecule M-313: Tris(2-hydroxyethyl isocyanurate) diacrylate / triacrylate (manufactured by Toagosei Co., Ltd.), equivalent to a photopolymerizable compound with three vinyl groups in the molecule VG3101L: 2,2'-[[1-[4-[1-methyl-1-[4-(2-oxyranylmethoxy)phenyl]ethyl]phenyl]ethylidene]bis(4,1-phenyleneoxymethylene)]bis-oxirane (manufactured by Printec Co., Ltd.), equivalent to a photopolymerizable compound with three epoxy groups in the molecule IrgacureOXE02: 1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazole-3-yl]ethanone, 1-(0-acetyloxime) (manufactured by BASF Japan Ltd.), equivalent to a photopolymerization initiator. WPAG-370: Diphenyl (4-methoxyphenyl) sulfonium trifluoromethanesulfonate (manufactured by Fujifilm Wako Pure Chemical Industries Ltd.), equivalent to a photopolymerization initiator. WPBG-018: 9-anthrylmethyl N,N-diethylcarbamate (manufactured by Fujifilm Wako Pure Chemical Industries Ltd.), equivalent to a photopolymerization initiator. BPDA: 3,3',4,4'-biphenyltetracarboxylic anhydride (manufactured by Mitsubishi Chemical Corporation). BTDA: 3,3',4,4'-benzophenonetetracarboxylic anhydride (manufactured by Fujifilm Wako Pure Chemical Industries Ltd.). BAHF: 2,2-bis(3-amino-4-hydroxyphenyl)-1,1,1,3,3,3-Hexafluoropropane (Merck KGaA) Modified silicone oil X-22-161A (Shin-Etsu Chemical Co., Ltd.) Modified silicone oil 16-853U (Shin-Etsu Chemical Co., Ltd.) Modified silicone oil SiDA (Shin-Etsu Chemical Co., Ltd.) PVAc: Polyvinyl acetate (Sigma-Aldrich) PS-7804: Phenolic resin (Gun-ei Chemical Industry Co., Ltd.) Production Example 1 (Production of Polyimide 1) In a reaction vessel equipped with a thermometer, dry nitrogen inlet, heating and cooling device with hot water and cooling water, and stirring device, add 9.88 g (27.00 mmol) of BAHF, 13.95 g (9.00 mmol) of modified silicone oil X-22-161A, 126.85 g (130.50 mmol) of modified silicone oil 16-853U, 3.35 g (13.50 mmol) of modified silicone oil SiDA, CHN 139.46 g of each was added and dissolved. Next, 26.91 g (91.47 mmol) of BPDA and 29.17 g (90.53 mmol) of BTDA were added, and the mixture was stirred at 85°C for 1 hour. After that, the mixture was stirred at 135°C for 4 hours to obtain a polyimide solution.

[0108] Manufacturing Example 2 (Production of Polyimide 2) In a reaction vessel equipped with a thermometer, a dry nitrogen inlet, a heating and cooling device using hot and cold water, and a stirring device, 9.88 g (27.00 mmol) of BAHF, 202.28 g (130.50 mmol) of modified silicone oil X-22-161A, 8.75 g (9.00 mmol) of modified silicone oil 16-853U, 3.35 g (13.50 mmol) of modified silicone oil SiDA, and 186.27 g of CHN were charged together and dissolved. Next, 26.91 g (91.47 mmol) of BPDA and 29.17 g (90.53 mmol) of BTDA were added, and the mixture was stirred at 85°C for 1 hour. After that, the mixture was stirred at 135°C for 4 hours to obtain a polyimide solution.

[0109] Production Example 3 (Production of Polyamic Acid 1) In a reaction vessel equipped with a thermometer, a dry nitrogen inlet, a heating and cooling device using hot and cold water, and a stirring device, 9.88 g (27.00 mmol) of BAHF, 13.95 g (9.00 mmol) of modified silicone oil X-22-161A, 126.85 g (130.50 mmol) of modified silicone oil 16-853U, 3.35 g (13.50 mmol) of modified silicone oil SiDA, and 139.46 g of CHN were charged together and dissolved. Next, 26.91 g (91.47 mmol) of BPDA and 29.17 g (90.53 mmol) of BTDA were added, and the mixture was stirred at 85°C for 1 hour to obtain a polyamic acid solution.

[0110] Example 1: 3.5 g (70 parts by mass) of PVAc, 1.00 g (20 parts by mass) of Light Ester EG, 0.50 g (10 parts by mass) of Irgacure OXE02, and 5 g of CHN were weighed and added to a 25 mL vial and stirred. After stirring, the mixture was filtered using a high-density PTFE filter with a pore size of 1 μm to prepare the varnish.

[0111] Using the obtained varnish, a laminate 3 was prepared according to (1) above, and evaluated according to the evaluation methods of (2) and (3). The evaluation results for the prepared laminate 3 are summarized in Table 1.

[0112] Examples 2-4, 9-16, and Comparative Examples 3-4: Varnishes were prepared in the same manner as in Example 1 using the compounds listed in Table 1 or Table 2. Laminate 3 was then obtained using the obtained varnish according to the preparation method described in (1) above, and evaluated according to the evaluation methods described in (2) and (3). The evaluation results are summarized in Tables 1 and 2.

[0113] Examples 5, 6, and 8: Varnishes were prepared in the same manner as in Example 1 using the compounds listed in Table 1.

[0114] Using the obtained varnish, laminate 3 was prepared according to (1) above. At that time, the exposure amount was adjusted as appropriate to achieve the elastic modulus shown in the table. Subsequently, evaluation was performed according to the evaluation methods of (2) and (3). The evaluation results are summarized in Table 1.

[0115] Example 7 A varnish was prepared in the same manner as in Example 1 using the compounds listed in Table 1. A laminate 2 was obtained using the obtained varnish according to (1) above. Using a mask aligner, the laminate 2 was irradiated with a mixed beam of i-line (wavelength 365 nm), h-line (wavelength 405 nm), and g-line (wavelength 436 nm) from an ultra-high pressure mercury lamp from the glass substrate side, exposing the entire photosensitive resin film and adjusting the elastic modulus α to 500 MPa. Subsequently, the laminate 2 was irradiated with a mixed beam of i-line (wavelength 365 nm), h-line (wavelength 405 nm), and g-line (wavelength 436 nm) from an ultra-high pressure mercury lamp from the side on which the semiconductor chip was laminated, exposing all parts except those masked by the semiconductor chip, to obtain a laminate with the exposed semiconductor chip. The final laminate was evaluated according to the evaluation methods in (2) and (3), and the evaluation results are summarized in Table 1.

[0116] Comparative Example 1: A varnish was prepared in the same manner as in Example 1 using the compounds listed in Table 2. Laminate 2 was obtained using the obtained varnish according to (1) above. Subsequently, evaluation was performed according to the evaluation methods in (2) and (3) without performing an exposure step. The evaluation results are summarized in Table 2.

[0117] Comparative Example 2 A varnish was prepared in the same manner as in Example 1 using the compounds listed in Table 2. Laminate 2 was obtained using the obtained varnish according to (1) above. Using a mask aligner, the entire surface of the photosensitive resin film was exposed by irradiating the glass substrate side of laminate 2 with a mixed i-line (wavelength 365 nm), h-line (wavelength 405 nm), and g-line (wavelength 436 nm) of an ultra-high pressure mercury lamp, and the elastic modulus α was adjusted to 300 MPa. Subsequently, evaluation was performed according to the evaluation methods of (2) and (3) without performing an exposure process using the chip as a mask. The evaluation results are summarized in Table 2.

[0118]

[0119]

[0120] From the results in Tables 1 and 2, the laminates of Examples 1 to 16 were able to transfer the semiconductor chip with excellent positional accuracy. On the other hand, from the results in Table 2, Comparative Examples 1 and 2 did not form a region corresponding to region β around the semiconductor chip, and were unable to transfer the semiconductor chip with good positional accuracy. In Comparative Example 3, the indentation modulus of the region corresponding to region α was outside the desirable range, and even when irradiated with a laser, the resin film, especially the region corresponding to region α, did not expand as expected, and the semiconductor chip could not be transferred with good positional accuracy.

[0121] In this embodiment, the accuracy of transfer to the temporary fixing substrate was evaluated, but it should be noted that the transfer of the semiconductor chip obtained in the embodiment to the circuit-equipped substrate from the temporary fixing substrate was also performed without any problems. Furthermore, the high accuracy of direct transfer from the laminate 3 to the circuit-equipped substrate can be easily understood from the results of the embodiment.

[0122] 11 First substrate 12 Region α 13 Region β 14 Semiconductor chip 15 Unexposed resin film 31 Second substrate 32 Adhesive layer 41 Third substrate 42 Layer for receiving the semiconductor chip (catch layer) 51 Flip-chip bonder 61 Exposure light 71 Laser light 100 Laminate of the present invention 300 Substrate with semiconductor chip 400 Temporarily fixed substrate with semiconductor chip temporarily fixed

Claims

1. A laminate comprising a substrate, a resin film, and a semiconductor chip stacked in this order, wherein the resin film has a region where the indentation modulus is 1 MPa or more and 500 MPa or less (for convenience, this region will be called "region α" and the indentation modulus of this region will be called "modulus α"), and a region surrounding this region where the indentation modulus is higher than modulus α (for convenience, this region will be called "region β" and the indentation modulus of this region will be called "modulus β"), the ratio β / α of modulus α to modulus β is greater than 1, and the semiconductor chip is stacked on region α.

2. The laminate according to claim 1, wherein the thickness of the resin film is in the range of 5 μm or more and 30 μm or less.

3. The laminate according to claim 1, wherein the region α of the resin film contains a compound having three or more crosslinking reaction sites within the molecule.

4. The laminate according to claim 1, wherein region α of the resin film is composed of a radiation-sensitive resin in which components contained within the irradiated region are crosslinked or polymerized by irradiation with radiation, and region β is composed of the resin after crosslinking or polymerization of the radiation-sensitive resin.

5. The laminate according to claim 1, wherein the resin film contains one or more resins selected from the group consisting of polyimide, polybenzoxazole and its precursors and copolymers thereof.

6. A method for manufacturing a laminate, comprising the following steps 1 to 3, wherein steps 1 to 3 are performed in this order, and the method satisfies the following conditions 1 and 2: Step 1: A step of applying a radiation-sensitive resin to a substrate in which components contained in the irradiated area are crosslinked or polymerized by irradiation with radiation, thereby forming a radiation-sensitive resin film. Step 2: A step of laminating a semiconductor chip onto the surface of the radiation-sensitive resin film formed on the substrate. Step 3: A step of irradiating the radiation-sensitive resin film formed on the substrate with radiation from the side of the semiconductor chip. Condition 1: In the radiation-sensitive resin film after irradiation with radiation, the indentation modulus of the area where the semiconductor chip is mounted is 1 MPa or more and 500 MPa or less. Condition 2: In the radiation-sensitive resin film after irradiation with radiation, the value obtained by dividing the indentation modulus (MPa) of the area where the semiconductor chip is mounted by the indentation modulus (MPa) of the area where the semiconductor chip is mounted is greater than 1.

7. The method for manufacturing a laminate according to claim 6, wherein step 2 is performed in the following order: Step 2-1: A step of preparing a semiconductor chip-equipped substrate on which a semiconductor chip is mounted. Step 2-2: A step of arranging the radiation-sensitive resin film side of the radiation-sensitive resin film-equipped substrate obtained in step 1 and the side of the semiconductor chip-equipped substrate on which the semiconductor chip is mounted facing each other. Step 2-3: A step of transferring the semiconductor chip mounted on the semiconductor chip-equipped substrate onto the radiation-sensitive resin film of the radiation-sensitive resin film-equipped substrate.

8. The method for manufacturing a laminate according to claim 7, wherein the method for separating the semiconductor chip mounted on the substrate with the semiconductor chip in step 2-3 from the substrate is a mechanical peeling method.

9. The method for manufacturing a laminate according to claim 7, wherein in step 2-3, the method for separating the semiconductor chip mounted on the substrate with the semiconductor chip from the substrate is a peeling method by irradiation with a laser from the substrate side.

10. The method for producing a laminate according to claim 6, wherein the radiation-sensitive resin contains a compound having three or more crosslinking groups in its molecule.

11. The method for producing a laminate according to claim 6, wherein the radiation-sensitive resin contains one or more resins selected from the group consisting of polyimide, polybenzoxazole and its precursors and copolymers thereof.

12. A method for manufacturing a semiconductor device, comprising the following steps 4 to 6, wherein steps 4 to 6 are performed in this order: Step 4: A step of preparing a circuit-equipped substrate on which semiconductor chips are to be mounted. Step 5: A step of arranging the laminate obtained by the method for manufacturing a laminate according to claim 1 or claim 6 so that the side on which the semiconductor chips are mounted faces the side of the circuit-equipped substrate on which the semiconductor chips are mounted. Step 6: A step of irradiating the laminate obtained by the method for manufacturing a laminate according to claim 1 or claim 6 with laser light from the side opposite to the side on which the semiconductor chips are mounted to transfer the semiconductor chips to the circuit-equipped substrate, and optically or electrically joining the circuit and the semiconductor chips together or after the transfer to obtain a semiconductor device.

13. A method for manufacturing a semiconductor device, comprising the following steps 4' to 7', wherein steps 4' to 7' are performed in this order: Step 4': A step of preparing a substrate for temporarily fixing a semiconductor chip, and a step of preparing a circuit-equipped substrate on which a semiconductor chip is planned to be mounted. Step 5': A step of arranging the laminate obtained by the method for manufacturing a laminate according to claim 1 or claim 6, with the side on which the semiconductor chip is laminated facing the side of the substrate for temporarily fixing the semiconductor chip that catches the semiconductor chip. Step 6': A step of irradiating the laminate obtained by the method for manufacturing a laminate according to claim 1 or claim 6 with laser light from the side opposite to the side on which the semiconductor chip is laminated, to transfer the semiconductor chip to the substrate for temporarily fixing the semiconductor chip. Step 7': A step of transferring the semiconductor chip from the substrate on which the semiconductor chip has been transferred to the circuit-equipped substrate on which the semiconductor chip is planned to be mounted, and optically or electrically joining the circuit and the semiconductor chip together at the time of the transfer or after the transfer to obtain a semiconductor device.

14. The method for manufacturing a semiconductor device according to claim 12, wherein in step 6, a gap is provided between the laminate and the circuit-equipped substrate, and a laser beam is irradiated to transfer the semiconductor chip.

15. The method for manufacturing a semiconductor device according to claim 12, wherein in step 6, the semiconductor chip is transferred by back pressure generated by expanding a resin film or a photosensitive resin film with energy from a laser beam.

16. The method for manufacturing a semiconductor device according to claim 13, wherein in step 6', a gap is provided between the laminate and the substrate for temporarily fixing the semiconductor chip, and the semiconductor chip is transferred by irradiating it with laser light.

17. The method for manufacturing a semiconductor device according to claim 13, wherein in step 6', the semiconductor chip is transferred by back pressure generated by expanding a resin film or a photosensitive resin film with energy from a laser beam.

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