High-frequency module, communication device, and method for producing high-frequency module
Patent Information
- Application Number
- PCT/JP2026/006102
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-03-24
- Filing Date
- 2026-02-19
- Publication Date
- 2026-10-01
Smart Images
Figure JP2026006102_01102026_PF_FP_ABST
Abstract
Description
High-frequency module, communication device, and method for manufacturing high-frequency module
[0001] The present invention generally relates to a high-frequency module, a communication device, and a method for manufacturing a high-frequency module, and more particularly to a high-frequency module including a bump electrode provided on a mounting substrate, a communication device including the high-frequency module, and a method for manufacturing the high-frequency module.
[0002] The semiconductor device described in Patent Document 1 includes an interposer substrate, a pad electrode provided on a main surface of the interposer substrate, and a bump electrode provided on the pad electrode. The bump electrode includes a first bump electrode portion, a second bump electrode portion, and a resist layer. The first bump electrode portion is formed in a conical shape on the pad electrode. The second bump electrode portion is formed in a substantially spherical shape on the first bump electrode portion. The resist layer is formed so as to cover the periphery of the first bump electrode portion. In this semiconductor device, solder bumps of an electronic component are melted and connected to the bump electrodes of the semiconductor device, whereby the electronic component is mounted on the semiconductor device.
[0003] Japanese Unexamined Patent Publication No. 11-251472
[0004] In recent years, miniaturization of electronic components has been progressing. With the progress of miniaturization of electronic components, the distance between solder bumps of electronic components becomes smaller. When the distance between solder bumps becomes smaller, it becomes difficult to fill resin between the mounting substrate and the electronic component. For this reason, as in the semiconductor device described in Patent Document 1, by using the electrode on the mounting substrate as a bump electrode and increasing the height of the electrode, it becomes easier to fill resin into the space between the mounting substrate and the electronic component.
[0005] However, when the electrode on the mounting substrate is a bump electrode as in the semiconductor device described in Patent Document 1, when the bump electrode of the semiconductor device is connected to the molten solder bump of the electronic component, a part (solder) of the molten solder bump flows and spreads to the outer peripheral side of the bump electrode, which may cause a short circuit with another electrode provided on the main surface of the mounting substrate of the semiconductor device.
[0006] In view of the above problems, the present invention aims to provide a high-frequency module, a communication device, and a method for manufacturing a high-frequency module that can reduce the flow and spread of a portion of the molten solder bump connected to the protruding electrode toward the outer circumference of the protruding electrode.
[0007] A high-frequency module according to one aspect of the present invention comprises a mounting substrate, an electronic component, a protruding electrode, and a convex portion. The electronic component is arranged on the main surface of the mounting substrate. The protruding electrode is provided on the main surface of the mounting substrate and connected to the solder bump of the electronic component. The convex portion is provided on the protruding electrode. The protruding electrode comprises a convex portion and an electrode layer. The protruding portion is insulating. The protruding portion is provided on the main surface of the mounting substrate. The electrode layer is provided on the surface of the protruding portion. The convex portion is formed in an annular shape on the surface of the electrode layer.
[0008] A communication device according to one aspect of the present invention comprises the high-frequency module and a signal processing circuit. The signal processing circuit is connected to the high-frequency module and processes high-frequency signals.
[0009] A method for manufacturing a high-frequency module according to one aspect of the present invention comprises a first step, a second step, and a third step. In the first step, a substrate is manufactured on which an insulating projection body is formed on the main surface of the mounting substrate body. In the second step, an insulating sheet member is manufactured on which an electrode layer is laminated on the main surface of the insulating sheet member body and an annular protrusion is formed on the electrode layer. In the third step, the sheet member is bonded to the main surface of the substrate such that the electrode layer overlaps with the projection body. The mounting substrate body, the overlapping portion of the sheet member body with the mounting substrate body, and the base end portion of the projection body constitute the mounting substrate. The tip end portion of the projection body and the overlapping portion of the sheet member body with the projection body constitute the projection. The projection and the electrode layer constitute a projection electrode that is connected to a solder bump of an electronic component.
[0010] The high-frequency module, communication device, and method for manufacturing the high-frequency module according to the present invention have the advantage of reducing the flow and spread of a portion of the molten solder bump connected to the protruding electrode to the outer circumference of the protruding electrode.
[0011] Figure 1 is a plan view of a high-frequency module according to Embodiment 1. Figure 2 is a cross-sectional view taken along the line X1-X1 in Figure 1. Figure 3 is an explanatory diagram illustrating one step in the manufacturing method of the same high-frequency module. Figure 4 is an explanatory diagram illustrating another step in the manufacturing method of the same high-frequency module. Figure 5 is an explanatory diagram illustrating yet another step in the manufacturing method of the same high-frequency module. Figure 6 is an explanatory diagram illustrating yet another step in the manufacturing method of the same high-frequency module. Figure 7 is a plan view of a high-frequency module according to Embodiment 2. Figure 8 is a cross-sectional view taken along the line X2-X2 in Figure 7. Figure 9 is a plan view of a high-frequency module according to Embodiment 3. Figure 10 is a cross-sectional view taken along the line X3-X3 in Figure 9. Figure 11 is a plan view of a high-frequency module according to Embodiment 4. Figure 12 is a cross-sectional view taken along the line X4-X4 in Figure 11. Figure 13 is a plan view of a high-frequency module according to Embodiment 5. Figure 14 is a cross-sectional view taken along the line X5-X5 in Figure 13. Figure 15 is a plan view of a mounting substrate for a high-frequency module according to Embodiment 6. Figure 16 is a configuration diagram showing an example of the configuration of a communication device according to Embodiment 7.
[0012] (Embodiment 1) The high-frequency module 1 according to Embodiment 1 will be described in detail with reference to the drawings. The figures described in the following embodiments are schematic diagrams, and the ratios of the size and thickness of each component in the figures do not necessarily reflect the actual dimensional ratios.
[0013] (1) As shown in the schematic diagram 2, the high-frequency module 1 according to Embodiment 1 includes a mounting substrate 2, an electronic component 5, a protruding electrode 3, and a convex portion 4. The electronic component 5 is arranged on the main surface 2a of the mounting substrate 2. The protruding electrode 3 is provided on the first main surface 2a (main surface) of the mounting substrate 2 and is connected to the solder bump 53 of the electronic component 5. The convex portion 4 is provided on the protruding electrode 3. The protruding electrode 3 has an insulating protrusion 31 and an electrode layer 32. The protrusion 31 is provided on the first main surface 2a of the mounting substrate 2. The electrode layer 32 is provided on the surface of the protrusion 31. The convex portion 4 is formed in an annular shape on the surface of the electrode layer 32.
[0014] With this configuration, the annular protrusion 4 can block the solder that flows out from the molten solder bump 53 connected to the protruding electrode 3. As a result, the annular protrusion 4 can reduce the amount of solder that flows out and spreads to the outer circumference of the protruding electrode 3 from the molten solder bump 53 connected to the protruding electrode 3.
[0015] (2) Details (2-1) Configuration The high-frequency module 1 according to Embodiment 1 can be applied to a high-frequency module provided in a communication device such as a mobile terminal, for example.
[0016] As shown in Figures 1 and 2, the high-frequency module 1 comprises a mounting substrate 2, one or more (one in Figures 1 and 2) protruding electrodes 3, one or more (one in Figures 1 and 2) convex portions 4, and an electronic component 5.
[0017] The electronic component 5 is, for example, an IC (Integrated Circuit) chip. The electronic component 5 is, for example, a low-noise amplifier, a switch, a controller, a SAW (Surface Acoustic Wave) filter, or a BAW (Bulk Acoustic Wave) filter. The electronic component 5 has a component body 51, one or more (one in Figures 1 and 2) external electrodes 52, and one or more (one in Figures 1 and 2) solder bumps 53.
[0018] The component body 51 is the part that includes the functional section that performs the function of the electronic component 5. The component body 51 is the part of the electronic component 5 other than the external electrode 52 and the solder bump 53. The component body 51 is, for example, a flat plate with a rectangular shape in plan view. The external electrode 52 is connected to the protruding electrode 3 via the solder bump 53. The external electrode 52 is, for example, a flat plate. The external electrode 52 is located on the back surface (i.e., the main surface facing the mounting substrate 2) 51b of the component body 51. The solder bump 53 is, for example, a hemispherical (i.e., circular in plan view) solder and is provided on the external electrode 52. The solder bump 53 is a member that electrically connects the external electrode 52 and the protruding electrode 3.
[0019] The electronic component 5 is placed (mounted) on the first main surface 2a of the mounting substrate 2 with its external electrode 52 connected to the protruding electrode 3 (described later) via a solder bump 53.
[0020] The mounting substrate 2 is a substrate on which the electronic components 5 are arranged (mounted). The mounting substrate 2 is, for example, a flat plate. The mounting substrate 2 is, for example, an LTCC (Low Temperature Co-fired Ceramics) substrate. However, the mounting substrate 2 is not limited to LTCC, and may be, for example, a resin multilayer substrate, a printed circuit board, or an HTCC (High Temperature Co-fired Ceramics) substrate.
[0021] The mounting substrate 2 is, for example, a multilayer substrate including a plurality of insulating layers and a plurality of conductive layers 21. Each of the plurality of conductive layers 21 is provided between the plurality of insulating layers. That is, the plurality of insulating layers and the plurality of conductive layers 21 are alternately stacked in the thickness direction D1 of the mounting substrate 2. The plurality of conductive layers 21 are formed in a predetermined pattern defined for each layer. A plurality of via electrodes 22 are provided inside the mounting substrate 2. The plurality of via electrodes 22 connect two conductive layers 21 which are different layers from each other, or connect a conductive layer 21 to a pad 6 described later. The insulating layer is a dielectric layer and is formed of, for example, ceramic. The conductive layer 21, via electrodes 22 and pad 6 are formed of, for example, copper or a copper alloy.
[0022] The mounting substrate 2 has a first main surface 2a and a second main surface 2b. The first main surface 2a and the second main surface 2b are main surfaces that face each other in the thickness direction D1 of the mounting substrate 2.
[0023] The first main surface 2a of the mounting substrate 2 is provided with a plurality of pads 6 (two in the example shown in Figures 1 and 2), a protruding electrode 3, and a convex portion 4.
[0024] The multiple pads 6 are the parts to which the protruding electrodes 3 and the like are electrically connected. The multiple pads 6 are, for example, flat plates. The multiple pads 6 are arranged on the first main surface 2a of the mounting substrate 2. The multiple pads 6 are connected to one of the multiple conductive layers 21 via via electrodes 22.
[0025] The protruding electrode 3 is an electrode connected to the solder bump 53 of the electronic component 5. The protruding electrode 3 is provided so as to protrude from the first main surface 2a of the mounting substrate 2. The protruding electrode 3 is a convex curved surface having a curved surface that is convex in the direction of the normal N1 of the first main surface 2a of the mounting substrate 2. More specifically, the protruding electrode 3 is, for example, a circular or elliptical convex curved surface when viewed from the direction of the normal N1 of the first main surface 2a of the mounting substrate 2 (hereinafter simply referred to as "plan view"). That is, the external shape of the protruding electrode 3 is circular or elliptical in the above plan view. In the examples of Figures 1 and 2, the case in which the protruding electrode 3 is a convex curved surface with a circular shape in the plan view is illustrated. That is, in the examples of Figures 1 and 2, the external shape of the protruding electrode 3 is illustrated as being circular in the above plan view. In Embodiment 1, the external shape of the solder bump 53 is, for example, circular in the above plan view. The outer shape (circular) of the protruding electrode 3 matches the outer shape (circular) of the solder bump 53.
[0026] The direction of the normal vector N2 at each part of the surface of the convex curved body coincides with the direction of the normal vector N1 of the first main surface 2a of the mounting substrate 2 at, for example, the vertex T2 of the protruding electrode 3, and slopes in the direction away from the vertex T2 as it moves away along the surface of the protruding electrode 3. The protruding electrode 3 is electrically connected to one of the multiple pads 6.
[0027] More specifically, the projection electrode 3 has a projection 31 and an electrode layer 32.
[0028] The projection 31 is formed of an insulating material (for example, the same material as the insulating layer of the mounting substrate 2 (for example, ceramic)). The projection 31 is provided so as to protrude from the first main surface 2a of the mounting substrate 2. The projection 31 is a convex curved surface having a curved surface that is convex in the direction of the normal N1 of the first main surface 2a of the mounting substrate 2. More specifically, the projection 31 is a convex curved surface that is, for example, circular or elliptical in plan view (circular in plan view in the examples of Figures 1 and 2).
[0029] The electrode layer 32 is a conductive layer provided on the surface of the projection 31. In Figures 1 and 2, the electrode layer 32 is provided so as to cover the entire surface of the projection 31. In the example of Figures 1 and 2, the electrode layer 32 is provided so as to cover an area slightly larger than the surface of the projection 31. The material of the electrode layer 32 is, for example, copper or a copper alloy. The electrode layer 32 is electrically connected to one of the plurality of pads 6. The surface of the electrode layer 32 constitutes the surface of the projection electrode 3.
[0030] The protruding electrode 3 is connected to the solder bump 53 of the electronic component 5, thereby electrically connecting to the electronic component 5 via the solder bump 53.
[0031] The protrusion 4 is provided in an annular shape on the surface of the protruding electrode 3 (i.e., the surface of the electrode layer 32). The protrusion 4 is a component that reduces the flow and spread of a portion of the molten solder bump 53 (solder) to the outer circumference of the protruding electrode 3 when the protruding electrode 3 and the molten solder bump 53 of the electronic component 5 are connected. In other words, the protrusion 4 constitutes a solder flow prevention structure. The protrusion 4 is provided in an annular shape on the surface of the protruding electrode 3 (i.e., the surface of the electrode layer 32).
[0032] Note that "ring-shaped" is not limited to cases where it is completely closed in the circumferential direction, but may be open in part in the circumferential direction. When a part is open in the circumferential direction (i.e., when there is a cut portion in a part of the circumferential direction), the size of the cut portion (i.e., the length of the cut section) is, for example, 10% or less (preferably 5% or less) when the entire circumference in the circumferential direction is considered 100%. In Embodiment 1, it is assumed that the convex portion 4 is completely closed in the circumferential direction.
[0033] The protrusion 4 is provided so as to surround the contact point T1 of the projection electrode 3. The contact point T1 is the part that connects to the solder bump 53 on the projection electrode 3. Note that the contact point T1 is assumed to coincide with, for example, the vertex T2 of the projection electrode 3. However, the contact point T1 and the vertex T2 are not limited to coinciding.
[0034] The protrusion 4 has an external shape that matches the external shape (for example, circular) of the projection electrode 3 in a plan view. That is, the protrusion 4 is formed, for example, as an annular shape that is circular in a plan view.
[0035] The protruding direction Q1 of the protrusion 4 (i.e., the direction in which the protrusion 4 protrudes from the surface of the protruding electrode 3) is inclined from a direction parallel to the first main surface 2a of the mounting substrate 2 to the normal direction (i.e., perpendicular direction) N1 of the first main surface 2a. In other words, the protruding direction Q1 of the protrusion 4 is oriented in this inclined direction (inclined direction). This effectively prevents solder from flowing down from the molten solder bump 53 connected to the protruding electrode 3.
[0036] More specifically, the projection direction Q1 of the protrusion 4 coincides with the direction of the normal N2 of the portion on the surface of the projection electrode 3 where the protrusion 4 is provided. As a result, the protrusion 4 protrudes in the aforementioned inclination direction. In other words, the protrusion 4 is provided on the surface of the projection electrode 3 in a portion having the same direction as the inclination direction described above, which is the direction of the normal N2.
[0037] The protrusion 4 is formed with an insulating material (e.g., a resist) to have a certain thickness. By forming the protrusion 4 with an insulating material in this way, it becomes easier to repel molten solder. Therefore, the protrusion 4 can effectively block molten solder.
[0038] (2-2) Method of manufacturing the high-frequency module 1 The method of manufacturing the intermediate product 1T, which is the part of the high-frequency module 1 other than the electronic component 5 (mounting substrate 2, protruding electrode 3 and protrusion 4), will be described with reference to Figures 3 to 6.
[0039] First, as shown in Figure 3, the mounting substrate body 60 is manufactured (step 0). The mounting substrate body 60 is the portion of the mounting substrate 2 other than the surface layer on the first main surface 2a side. More specifically, a laminate is manufactured by alternately stacking a plurality of insulating layers (e.g., ceramic) and a plurality of conductive layers (e.g., copper) 21. At that time, via electrodes 22 for connecting two conductive layers 21 which are different layers, and via electrodes 22 for connecting the conductive layer 21 and the pad 6 provided on the first main surface 2a of the mounting substrate 2 are further formed in the laminate. In this way, the mounting substrate body 60 is manufactured.
[0040] More specifically, in the above-mentioned step 0, the mounting substrate body 60 can be manufactured using a 3D printer. In this case, an unfired laminate having the structure of the mounting substrate body 60 is manufactured by inkjet printing using ink for the insulating layer and ink for the conductive layer (i.e., the conductive layer 21 and via electrode 22).
[0041] Next, as shown in Figure 4, the substrate 80 is manufactured (first step). More specifically, the substrate 80 is manufactured by forming insulating projection bodies 70 on the main surface 60a of the mounting substrate body 60 using the same material (e.g., ceramic) as the insulating layer of the mounting substrate body 60. That is, the substrate 80 is composed of the mounting substrate body 60 and the projection bodies 70. The projection bodies 70 are the parts of the projections 31 of the projection electrode 3 other than the surface layer. The projection bodies 70 are formed by sequentially stacking a plurality of insulating layers whose size in plan view gradually decreases.
[0042] More specifically, in the first step described above, the projection body 70 can be manufactured using a 3D printer. In this case, the unfired projection body 70 is formed on the main surface 60a of the mounting substrate body 60 by inkjet printing using insulating layer ink. This formation yields an unfired substrate 80. Then, the unfired substrate 80 is fired to complete the substrate 80.
[0043] Next, as shown in FIG. 5, a sheet member 90 is produced (second step). More specifically, first, an insulating sheet member main body 91 is produced. The sheet member main body 91 is formed into a sheet shape from the same member (ceramic) as the insulating layer of the mounting substrate main body 60. Then, via electrodes 22 are formed inside the produced sheet member main body 91, pads 6 and electrode layers 32 are formed on the front main surface of the produced sheet member main body 91, and annular convex portions 4 are formed on the surface of the formed electrode layers 32. In this way, the via electrodes 22, the pads 6, the electrode layers 32, and the convex portions 4 are formed on the sheet member main body 91, whereby the sheet member 90 is produced. That is, the sheet member 90 includes the sheet member main body 91, the via electrodes 22, the pads 6, the electrode layers 32, and the convex portions 4.
[0044] More specifically, in the second step, the sheet member 90 can be produced using a 3D printer. In this case, an unfired laminate having the structure of the sheet member 90 is formed by inkjet printing using ink for an insulating layer (i.e., the sheet member main body 91) and ink for conductive layers (i.e., the via electrodes 22, the pads 6, and the electrode layers 32). Then, the formed unfired laminate is fired to obtain the sheet member 90 having the above structure.
[0045] Next, as shown in FIG. 5, the produced sheet member 90 is bonded to the main surface 60a of the already produced substrate 80, thereby integrating the substrate 80 and the sheet member 90 (see FIG. 6, third step). At this time, the sheet member 90 is bonded to the main surface 60a of the substrate 80 such that the electrode layer 32 of the sheet member 90 overlaps the projection main body 70 of the substrate 80. In the bonded body configured by such bonding, the mounting substrate main body 60, the overlapping portion 91t of the sheet member main body 91 overlapping the main surface 60a of the mounting substrate main body 60, and the portion (base end side portion) 70t of the projection main body 70 below the upper surface of the overlapping portion 91t constitute the mounting substrate 2. Further, in the bonded body, the portion (tip end side portion) 70s of the projection main body 70 higher than the upper surface of the overlapping portion 91t, and the overlapping portion 91s of the sheet member main body 91 overlapping the projection main body 70 constitute the projection 31. The projection 31 and the electrode layer 32 constitute the projection electrode 3. In this way, the intermediate product 1T is produced.
[0046] Then, the electronic component 5 is mounted on the intermediate product 1T (fourth step). More specifically, the electronic component 5 is arranged on the intermediate product 1T such that the solder bumps 53 of the electronic component 5 are in contact with the apex T2 of the annular protrusion 4 of the protruding electrode 3 of the intermediate product 1T. In this state, the solder bumps 53 of the electronic component 5 are heated and melted. At this time, part (solder) of the molten solder bump 53 may flow down from the surface of the protruding electrode 3. However, an annular protrusion 4 is provided on the surface of the protruding electrode 3. Therefore, the solder that has flowed down on the surface of the protruding electrode 3 is dammed by the protrusion 4. This reduces spreading of the solder that has flowed down on the surface of the protruding electrode 3 to the outer peripheral side of the protruding electrode 3 on the first main surface 2a of the mounting substrate 2. As a result, short-circuiting of the pads 6 (electrodes) arranged on the outer periphery of the protruding electrode 3 on the first main surface 2a of the mounting substrate 2 due to the solder that has flowed down the surface of the protruding electrode 3 is reduced.
[0047] (3) Effects The high-frequency module 1 according to the first embodiment includes a mounting substrate 2, an electronic component 5, a protruding electrode 3, and a protrusion 4. The electronic component 5 is arranged on the first main surface 2a (main surface) of the mounting substrate 2. The protruding electrode 3 is provided on the first main surface 2a of the mounting substrate 2 and connected to the solder bump 53 of the electronic component 5. The protrusion 4 is provided on the protruding electrode 3. The protruding electrode 3 includes a protruding portion 31 and an electrode layer 32. The protruding portion 31 is insulative. The protruding portion 31 is provided on the first main surface 2a (main surface) of the mounting substrate 2. The electrode layer 32 is provided on the surface of the protruding portion 31. The protrusion 4 is annularly formed on the surface of the electrode layer 32.
[0048] According to this configuration, the annular protrusion 4 can dam the solder flowing out from the molten solder bump 53 connected to the protruding electrode 3. As a result, the annular protrusion 4 can reduce spreading of part (solder) of the molten solder bump 53 connected to the protruding electrode 3 to the outer peripheral side of the protruding electrode 3.
[0049] Furthermore, in the high-frequency module 1 according to Embodiment 1, the protrusion 4 is formed of an insulating material. With this configuration, the annular protrusion 4 makes it easier to repel solder. Therefore, the annular protrusion 4 can effectively block the solder that flows out from the molten solder bump 53.
[0050] Furthermore, in the high-frequency module 1 according to Embodiment 1, the protrusion 4 is formed to surround the outer circumference of the contact T1 that connects to the solder bump 53 on the protruding electrode 3. With this configuration, regardless of the direction in which the solder flows, the protrusion 4 effectively reduces the flow and spread of a portion of the molten solder bump 53 to the outside of the protruding electrode 3.
[0051] Furthermore, in the high-frequency module 1 according to Embodiment 1, the protrusion 4 has an external shape that matches the external shape of the protruding electrode 3 on which the protrusion 4 is provided, when viewed in a plan view from the direction of the normal N1 of the first main surface 2a (main surface) of the mounting substrate 2. With this configuration, the height of the protrusion 4 from the mounting substrate 2 can be made approximately constant along the annular circumference of the protrusion 4. As a result, solder can be effectively blocked by the protrusion 4.
[0052] Furthermore, the method for manufacturing a high-frequency module according to Embodiment 1 comprises a first step, a second step, and a third step. In the first step, a substrate 80 is manufactured on which an insulating projection body 70 is formed on the main surface 60a of the mounting substrate body 60. In the second step, a sheet member 90 is manufactured on which an electrode layer 32 is laminated on the main surface 91a of an insulating sheet member body 91 and an annular protrusion 4 is formed on the electrode layer 32. In the third step, the sheet member 90 is bonded to the main surface 60a of the substrate 80 so that the electrode layer 32 overlaps with the projection body 70. The mounting substrate body 60, the overlapping portion 91t of the sheet member body 91 with the mounting substrate body 60, and the base end portion 70t of the projection body 70 constitute the mounting substrate 2. The tip end portion 70s of the projection body 70 and the overlapping portion 91s of the sheet member body 91 with the projection body 70 constitute the projection 31. The protrusion 31 and the electrode layer 32 constitute the protruding electrode 3 that is connected to the solder bump 53 of the electronic component 5. With this configuration, a mounting substrate 2 can be created in which an annular protrusion 4 is provided on the protruding electrode 3.
[0053] (4) A modified example of the method for manufacturing the high-frequency module 1 according to the modified embodiment 1 will be described.
[0054] The first embodiment illustrates a method for manufacturing a high-frequency module 1 using a 3D printer. The modified example illustrates a method for manufacturing a high-frequency module 1 using printing technology (e.g., an inkjet method). When using printing technology, in the first step (see Figure 3) for manufacturing the mounting substrate body 80, an insulating layer is formed by ejecting an insulating layer ink with a pigment volume concentration of 60% to 95% using an inkjet method. A conductive layer (i.e., a conductive layer 21 and via electrodes 22) is formed by ejecting a metallic pigment ink with a pigment volume concentration of 70% to 95% using an inkjet method. In other words, the mounting substrate body 60 is formed by arbitrarily combining the steps of forming the insulating layer and forming the conductive layer.
[0055] Then, in the first step (see Figure 4) for manufacturing the projection body 70, an insulating layer ink with a pigment volume concentration of 60% to 95% is ejected using an inkjet method to form an unsintered projection body 70 on the main surface 60a of the mounting substrate body 60. This formation yields an unsintered substrate 80. Then, the organic components of the formed unsintered substrate 80 are removed, and the substrate 80 is sintered to complete the substrate 80.
[0056] Then, in the second step (see Figure 5) for manufacturing the sheet member 90, an insulating layer ink with a pigment volume concentration of 60% to 95% is ejected by an inkjet method to form an insulating layer (i.e., the sheet member body 91). Also, a metallic pigment ink with a pigment volume concentration of 70% to 95% is ejected by an inkjet method to form a conductive layer (i.e., via electrodes 22, pads 6, and electrode layer 32). In other words, by arbitrarily combining the steps of forming the insulating layer and forming the conductive layer, a molded body having the same structure as the sheet member 90 is formed. Then, the organic components of the formed molded body are removed, and the molded body after removal is sintered to obtain the sheet member 90.
[0057] The subsequent steps (the third and fourth steps) are the same as in Embodiment 1, so their explanation will be omitted.
[0058] The method for manufacturing the high-frequency module 1 according to this modified example makes it possible to achieve the same effects as in the first embodiment.
[0059] (Embodiment 2) The high-frequency module 1 according to Embodiment 2 will be described with reference to Figures 7 and 8.
[0060] (1) The high-frequency module 1 according to Embodiment 2 is configured similarly to the high-frequency module 1 according to Embodiment 1, except that it includes a plurality of (two in the example of Figures 7 and 8) protruding electrodes 3, a plurality of (two in the example of Figures 7 and 8) convex portions 4 provided on each of the plurality of protruding electrodes 3, and a plurality of (two in the example of Figures 7 and 8) solder bumps 53. In the following description, the plurality of protruding electrodes 3 and the plurality of convex portions 4 of Embodiment 2 will be simply referred to as the plurality of protruding electrodes 3 and the plurality of convex portions 4, respectively.
[0061] The multiple protruding electrodes 3 are configured in the same way as the multiple protruding electrodes 3 in Embodiment 1. There are no particular restrictions on the arrangement of the multiple protruding electrodes 3, but in Embodiment 2, it is assumed that the multiple protruding electrodes 3 are arranged with space between them. The multiple protruding electrodes 3 are connected to different solder bumps 53 from among the multiple solder bumps 53 of the electronic component 5. Each of the multiple protruding electrodes 3 is connected to the multiple solder bumps 53 in the same way as the multiple protruding electrodes 3 in Embodiment 1.
[0062] Each of the multiple protrusions 4 is provided in an annular shape on the surface of the multiple protruding electrodes 3, similar to the multiple protrusions 4 in Embodiment 1. That is, each of the multiple protrusions 4 corresponds one-to-one with each of the multiple protruding electrodes 3 and is provided in an annular shape on the surface of the corresponding protruding electrode 3. The multiple protrusions 4 reduce the flow and spread of a portion of the molten solder bump 53 that connects to the corresponding protruding electrode 3 towards the outer circumference of the corresponding protruding electrode 3.
[0063] The electronic component 5 of Embodiment 2 is configured similarly to the electronic component 5 of Embodiment 1, except that it has a plurality of external electrodes 52 and a plurality of solder bumps 53. The mounting substrate 2 of Embodiment 2 is configured similarly to the mounting substrate 2 of Embodiment 1.
[0064] (2) The high-frequency module 1 according to the second embodiment comprises a plurality of protruding electrodes 3 and a plurality of protrusions 4. Each of the plurality of protrusions 4 is provided on the surface of the plurality of protruding electrodes 3. With this configuration, it is possible to suppress the flow and spread of a portion of the molten solder bump 53 (solder) connected to each of the plurality of protruding electrodes 3 to the outside of the protruding electrode 3.
[0065] (Embodiment 3) The high-frequency module 1 according to Embodiment 3 will be described with reference to Figures 9 and 10.
[0066] (1) The high-frequency module 1 according to Embodiment 3 is configured similarly to the high-frequency module 1 according to Embodiment 2, except that the plurality of (two in the example of Figures 9 and 10) of protruding electrodes 3 include two protruding electrodes 3A and 3B whose protrusions 31 are connected to each other but whose electrode layers 32 are not connected to each other. In the following description, the plurality of protruding electrodes 3 of Embodiment 3 will be simply referred to as the plurality of protruding electrodes 3.
[0067] The multiple protruding electrodes 3 are equipped with a protrusion 31 and an electrode layer 32, similar to the protruding electrode 3 of Embodiment 2 (i.e., similar to the protruding electrode 3 of Embodiment 1).
[0068] The multiple protruding electrodes 3 include two protruding electrodes 3A and 3B. A portion of the outer peripheral edge 31g of the protrusion 31 of protruding electrode 3A is connected to a portion of the outer peripheral edge 31g of the protrusion 31 of protruding electrode 3B. Furthermore, the electrode layer 32 of protruding electrode 3A is not connected to the electrode layer 32 of protruding electrode 3B. In other words, the electrode layer 32 of protruding electrode 3A is not electrically connected to the electrode layer 32 of protruding electrode 3B.
[0069] More specifically, in the case of the protruding electrode 3A, the electrode layer 32 is not formed on the surface of the protrusion 31 at the connecting portion 31r where the protrusions 31 of the two protruding electrodes 3A and 3B connect to each other, but is provided on the surface of the protrusion 31 other than the connecting portion 31r. Similarly, in the case of the protruding electrode 3B, the electrode layer 32 is not formed on the surface of the protrusion 31 at the connecting portion 31r, but is provided only on the surface of the protruding electrode 31 other than the connecting portion 31r.
[0070] Thus, in Embodiment 3, the two protruding electrodes 3A and 3B can be arranged in close proximity to each other such that their respective protrusions 31 are connected to each other, but their respective electrode layers 32 are not connected to each other.
[0071] The two protruding electrodes 3A and 3B are connected to different solder bumps 53A and 53B among the multiple solder bumps 53 of the electronic component 5. As the electronic component 5 is miniaturized, the distance between the two solder bumps 53A and 53B decreases, and accordingly, the distance between the two protruding electrodes 3A and 3B on the mounting substrate 2 also needs to be reduced. According to Embodiment 3, even in such a case, it is possible to arrange the two protruding electrodes 3A and 3B in close proximity to each other without electrically connecting them.
[0072] (2) Effects In the high-frequency module 1 according to Embodiment 3, the plurality of protruding electrodes 3 include two protruding electrodes 3A and 3B. The protruding portions 31 of the two protruding electrodes 3A and 3B are connected to each other. The electrode layers 32 of the two protruding electrodes 3 are not connected to each other. With this configuration, the two protruding electrodes 3A and 3B are arranged close to each other such that their protruding portions 31 are connected to each other, but their electrode layers 32 are not connected to each other. Even when the two protruding electrodes 3A and 3B are arranged close to each other in this way, the annular protrusions 4 provided on each of the two protruding electrodes 3A and 3B reduce the amount of molten solder bumps 53A and 53B (solder) that flows out of the protruding electrodes 3.
[0073] (Embodiment 4) The high-frequency module 1 according to Embodiment 4 will be described with reference to Figures 11 and 12.
[0074] (1) The high-frequency module 1 according to Embodiment 4 is configured similarly to the high-frequency module 1 according to Embodiment 1, except that the external shape of the protruding electrode 3 is different. Embodiment 4 will be described in detail below.
[0075] The external shape of the protruding electrode 3 in Embodiment 4 is elliptical when viewed from the direction of the normal N1 of the first main surface 2a of the mounting substrate 2. More specifically, the protruding electrode 3 comprises a protrusion 31 and an electrode layer 32, similar to the protruding electrode 3 in Embodiment 1. The protrusion 31 is formed similarly to the protrusion 31 in Embodiment 1, except that its external shape is elliptical when viewed from above. Similarly, the electrode layer 32 is provided on the surface of the protrusion 31, similarly to the electrode layer 32 in Embodiment 1, except that its external shape is elliptical when viewed from above.
[0076] Similarly, the protrusion 4 is also provided in an annular shape on the surface of the projection electrode 3, just as in the first embodiment, except that the external shape of the protrusion 4 is different. The external shape of the protrusion 4 is elliptical in the plan view described above. The external shape of the protrusion 4 (i.e., elliptical) matches the external shape (elliptical) of the projection electrode 3. The external shape (elliptical) of the protrusion 4 may be similar to the external shape (elliptical) of the projection electrode 3, or it may be similar (i.e., exactly the same) external shape (elliptical). For example, when the outer diameter shape of the projection electrode 3 is elliptical, an external shape similar to the external shape of the projection electrode 3 is an elliptical shape in which the ratio of the major axis to the minor axis is different from the elliptical shape of the projection electrode 3.
[0077] The external shape of the solder bump 53 of the electronic component 5 is, for example, elliptical in the plan view described above. The external shape (elliptical) of the protruding electrode 3 is the same as the external diameter shape (elliptical) of the solder bump 53 of the electronic component 5. When the protruding electrode 3 is connected to the solder bump 53, the direction of the major axis and minor axis of the elliptical shape of the protruding electrode 3 coincides with the direction of the major axis and minor axis of the elliptical shape of the solder bump 53 of the electronic component 5, and the protruding electrode 3 is connected to the solder bump 53 in this manner.
[0078] (2) Effects In the high-frequency module 1 according to Embodiment 4, the outer shape of the protrusion 4 is elliptical, so it can be optimally provided on the protruding electrode 3 which has an elliptical outer shape. That is, when the protrusion 4 is provided on the surface of the protruding electrode 3 which has an elliptical outer shape, the height of the protrusion 4 from the mounting substrate 2 can be made approximately constant along the annular circumference of the protrusion 4. As a result, the solder can be effectively blocked by the protrusion 4.
[0079] (Embodiment 5) The high-frequency module 1 according to Embodiment 5 will be described with reference to Figures 13 and 14.
[0080] (1) The high-frequency module 1 according to Embodiment 5 is configured similarly to the high-frequency module 1 according to Embodiment 2, except that the plurality of protrusions 4 include at least two (three in the example of Figure 13) protrusions 4C, 4D, and 4E that have different external shapes or different sizes when viewed from the first main surface 2a of the mounting substrate 2. Embodiment 5 will be described in detail below.
[0081] In Embodiment 5, the mounting substrate 2 is provided with a plurality of (three in the example of Figure 13) protruding electrodes 3 (3C, 3D, 3E) and a plurality of (three in the example of Figure 13) convex portions 4 (4C, 4D, 4E).
[0082] The external shape of the protruding electrode 3C is elliptical when viewed from the direction of the normal N1 to the first main surface 2a of the mounting substrate 2. The external shapes of each protruding electrode 3D and 3E are different from the external shape of the protruding electrode 3C (for example, circular) when viewed from the same plan. The external shapes of each protruding electrode 3D and 3E (i.e., circular) are of different sizes when viewed from the same plan. More specifically, the external shape of the protruding electrode 3D (i.e., circular) is larger (i.e., circular) than the external shape of the protruding electrode 3E (i.e., circular) when viewed from the same plan.
[0083] Multiple protrusions 4C, 4D, and 4E are provided in an annular shape on the surface of multiple protruding electrodes 3C, 3D, and 3E. The outer shape of protrusion 4C matches the outer shape (elliptical) of protruding electrode 3C in the plan view. The outer shapes of each protrusion 4D and 4E match the outer shape (circular) of each protruding electrode 3D and 3E in the plan view. The outer shapes (circular) of each protrusion 4D and 4E are of different sizes in the plan view. More specifically, the outer shape (circular) of protrusion 4D is larger than the outer shape (for example, circular) of protrusion 4E in the plan view.
[0084] In other words, the external shape of the convex portion 4C (elliptical) and the external shape of 4D (circular) are different from each other in the above plan view. Furthermore, the external shape of the convex portion 4C (elliptical) and the external shape of 4E (circular) are different from each other in the above plan view. Also, the external shape of the convex portion 4D (relatively large circular) and the external shape of the convex portion 4E (relatively small circular) are different in size from each other in the above plan view.
[0085] The electronic component 5 in mounting form 5 is configured similarly to the electronic component 5 in embodiment 2, except that it has multiple (three in the example in Figure 13) external electrodes 52C, 52D, 52E and multiple (three in the example in Figure 13) solder bumps 53C, 53D, 53E.
[0086] Multiple external electrodes 52C, 52D, and 52E are arranged on the back surface 51b of the electronic component 5. Multiple solder bumps 53C, 53D, and 53E are each provided on multiple external electrodes 52C, 52D, and 52E. The external shapes of the multiple solder bumps 53C, 53D, and 53E include two solder bumps having different external shapes or different sizes. More specifically, the external shape of solder bump 53C is elliptical. The external shapes of solder bumps 53D and 53E are circular in the above plan view. The external shape of solder bump 53E (i.e., circular) is larger than the external shape of the protruding electrode 3E (i.e., circular) in the above plan view.
[0087] Multiple protruding electrodes 3C, 3D, and 3E are each connected to multiple solder bumps 53C, 53D, and 53E. Each of the multiple protruding electrodes 3C, 3D, and 3E has an external shape that matches the external shape of the solder bumps 53C, 53D, and 53E to which it is connected. That is, the external shape (elliptical) of the protruding electrode 3C matches the external shape (elliptical) of the solder bump 53C in the above plan view. The external shape (circular) of the protruding electrodes 3D and 3E matches the external shape (circular) of the solder bumps 53C and 53E in the above plan view.
[0088] (2) In the high-frequency module 1 according to the effect embodiment 5, the plurality of protrusions 4 include at least two protrusions 4C, 4D, 4E that have different external shapes or different sizes when viewed in a plan view from the direction of the normal N1 of the first main surface 2a (main surface) of the mounting substrate 2. With this configuration, protrusions 4C, 4D, 4E that have different external shapes or different sizes can be used in combination.
[0089] (Embodiment 6) Referring to Figure 15, the high-frequency module 1 according to Embodiment 6 will be described.
[0090] (1) The high-frequency module 1 according to Embodiment 6 is configured similarly to the high-frequency module 1 according to Embodiment 1, except that the protrusion 4 has a cut portion 4p which is partially open in the circumferential direction, and the pads 6A are arranged on the first main surface 2a of the mounting substrate 2 based on the direction angle range of the cut portion 4p of the protrusion 4 (a range of direction angle α1 or more and direction angle α2 or less). Embodiment 6 will be described in detail below.
[0091] The protrusion 4 of Embodiment 6 is formed in an annular shape on the surface of the projection electrode 3, similar to the protrusion 4 of Embodiment 1. The protrusion 4 of Embodiment 6 is formed similarly to the protrusion 4 of Embodiment 1, except that it has a cut portion 4p that is open in part in the circumferential direction. The outer shape of the protrusion 4 of Embodiment 6 is, for example, circular. The cut portion 4p of the protrusion 4 of Embodiment 6 is a section of 10% or less (preferably 5% or less) of the entire circumference.
[0092] The high-frequency module 1 according to Embodiment 6 is configured similarly to the high-frequency module 1 according to Embodiment 1, except that the multiple pads 6 include pads 6A (electrodes).
[0093] Pad 6A is a pad that is not electrically connected to the protruding electrode 3. Pad 6A is located in region M2 of the outer peripheral region of the protruding electrode 3 on the first main surface 2a of the mounting substrate 2, excluding region M1 which has the same directional angle range (directional angle α1 or more and directional angle α2 or less) as region M1 which has the same directional angle range (directional angle α1 or more and directional angle α2 or less) as the cutting portion 4p of the protrusion 4.
[0094] The "direction angle" is the direction extending radially from the center of the protrusion 4 (i.e., the vertex (contact point) T1 of the protruding electrode 3), and is specified by the angle around the center of the protrusion 4 with respect to a certain direction from the center of the protrusion 4. The cut portion 4p of the protrusion 4 is in the range of direction angle α1 or greater and direction angle α2 or less. The first main surface 2a of the mounting substrate 2 has regions M1 and M2. Region M1 is a region where there is a relatively high possibility that a part of the molten solder bump 53 (solder) connected to the protruding electrode 3 will spread on the first main surface 2a of the mounting substrate 2 when it flows off the protruding electrode 3. Region M1 is the region on the first main surface 2a of the mounting substrate 2 that is outside the protruding electrode 3. Furthermore, region M1 is a region that has the same direction angle range as the direction angle range of the cut portion 4p of the protrusion 4 (the range of direction angle α1 or greater and direction angle α2 or less). Furthermore, region M1 is a region within a certain distance from the center of the protrusion 4 (for example, a distance of N times (e.g., 3 times) or less of the distance r1 from the center of the protrusion 4 to the center of the cut portion 4p). Region M2 is a region where the possibility of a portion of the molten solder bump 53 (solder) connected to the protruding electrode 3 spreading out on the first main surface 2a of the mounting substrate 2 is relatively low when it flows off the protruding electrode 3. Region M2 is the region of the first main surface 2a of the mounting substrate 2 other than region M1.
[0095] As described above, the pad 6A is located in region M2 of the first main surface 2a of the mounting substrate 2. In other words, in embodiment 6, the pad 6A is not located in region M1, but only in region M2. This reduces the risk of the pad 6A short-circuiting when a portion of the molten solder bump 53 connected to the protruding electrode 3 flows off the protruding electrode 3 and comes into contact with the pad 6A.
[0096] (2) Effect The high-frequency module 1 according to Embodiment 6 further comprises a pad 6A (electrode) provided on the first main surface 2a (main surface) of the mounting substrate 2. The protrusion 4 has a cut portion 4p in which a part of the circumferential direction of the protrusion 4 is open. The pad 6A is provided in a region M2 other than region M1, which has the same direction angle range as the cut portion 4p with respect to the direction angle around the contact T1 that connects to the solder bump 53 on the protrusion electrode 3, when viewed in plan from the first main surface 2a of the mounting substrate 2. With this configuration, when the protrusion 4 has a cut portion 4p, it is possible to reduce the short circuit between the solder flowing out from the cut portion 4p of the protrusion 4 and the pad 6A (electrode) provided on the first main surface 2a of the mounting substrate 2.
[0097] (Embodiment 7) (1) Referring to the configuration diagram 16, the communication device 100 according to Embodiment 7 will be described. The communication device 100 is a communication device that includes one of the high-frequency modules 1 from Embodiments 1 to 6.
[0098] As shown in Figure 16, the communication device 100 is, for example, a mobile terminal (e.g., a smartphone), but is not limited to a mobile terminal; it may also be, for example, a wearable device (e.g., a smartwatch). The high-frequency module 1 is, for example, a module compatible with 4G (fourth-generation mobile communication) standards and 5G (fifth-generation mobile communication) standards. The 4G standard is, for example, 3GPP (registered trademark, Third Generation Partnership Project) or the LTE standard (registered trademark, Long Term Evolution). The 5G standard is, for example, 5G NR (New Radio).
[0099] The communication device 100 further comprises a high-frequency module 101, a signal processing circuit 102, and an antenna 103.
[0100] The high-frequency module 101 is configured to amplify the received signal (high-frequency signal) received by the antenna 103 and output it to the signal processing circuit 102. The high-frequency module 101 is also configured to amplify the transmitted signal (high-frequency signal) output from the signal processing circuit 102 and transmit it from the antenna 103. The high-frequency module 101 is controlled, for example, by the signal processing circuit 102.
[0101] The signal processing circuit 102 is connected to the high-frequency module 101 and is configured to process the received signal output from the high-frequency module 101. The signal processing circuit 102 is also configured to process the transmitted signal output to the high-frequency module 101. The signal processing circuit 102 includes an RF (Radio Frequency) signal processing circuit 121 and a baseband signal processing circuit 122.
[0102] The RF signal processing circuit 121 is, for example, an RFIC (Radio Frequency Integrated Circuit) and performs signal processing on high-frequency signals (transmitted and received signals). The RF signal processing circuit 121 performs signal processing such as down-conversion on the received signal output from the high-frequency module 101 and outputs it to the baseband signal processing circuit 122. The RF signal processing circuit 121 also performs signal processing such as up-conversion on the transmitted signal output from the baseband signal processing circuit 122 and outputs it to the high-frequency module 101.
[0103] The baseband signal processing circuit 122 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 122 outputs the received signal output from the RF signal processing circuit 121 to the outside. This output signal (received signal) can be used, for example, as an image signal for image display, or as an audio signal for communication. The baseband signal processing circuit 122 also generates a transmission signal from the baseband signal input from the outside (for example, an audio signal and an image signal), and outputs the generated transmission signal to the RF signal processing circuit 121.
[0104] The high-frequency module 101 comprises a plurality of external terminals 110a to 110c and a plurality of electronic components. In the example shown in Figure 16, the plurality of electronic components include a switch 120, matching circuits 131, 132, 151, 152, a transmit filter 141, a receive filter 142, a power amplifier 161, and a low-noise amplifier 162.
[0105] External terminal 110a is an antenna terminal to which the antenna 103 is connected. External terminal 110b is connected to the output section (not shown) of the signal processing circuit 102 and is an input terminal that inputs the transmission signal processed by the signal processing circuit 102 to the high-frequency module 101. External terminal 110c is connected to the input section (not shown) of the signal processing circuit 102 and is an output terminal that outputs the received signal processed by the high-frequency module 101 to the input section of the signal processing circuit 102.
[0106] Switch 120 is, for example, an antenna switch. Switch 120 selects the destination of the external terminal 110a from among a plurality of filters (transmit filter 141 and receive filter 142 in the example of Figure 16). Switch 120 is, for example, a switch IC (Integrated Circuit). Switch 120 is controlled by, for example, a signal processing circuit 102. Switch 120 has a common terminal 120a and a plurality of (two in the example of Figure 16) selection terminals 120b and 120c. The common terminal 120a can be selectively connected to at least one of the plurality of selection terminals 120b and 120c. The common terminal 120a is connected to the external terminal 110a. The selection terminal 120b is connected to the external terminal 110b via the transmit path TL1. The selection terminal 120c is connected to the external terminal 110c via the receive path RL1.
[0107] The transmission path TL1 is equipped with a power amplifier 161, a matching circuit 151, a transmission filter 141, and a matching circuit 131. The reception path RL1 is equipped with a matching circuit 132, a reception filter 142, a matching circuit 152, and a low-noise amplifier 162.
[0108] The high-frequency module 101 of Embodiment 7 is based on one of the high-frequency modules 1 of Embodiments 1 to 6. Therefore, in Embodiment 7, the mounting substrate of the high-frequency module 101 is provided with a protruding electrode 3 having a convex portion 4, as described in the description of one of the high-frequency modules 1 of Embodiments 1 to 6. At least one of the above-mentioned electronic components is mounted on the mounting substrate by connecting the solder bump of the electronic component to the protruding electrode 3 provided on the mounting substrate of the high-frequency module 101, similar to the electronic component 5 provided in one of the high-frequency modules 1 of Embodiments 1 to 6. (2) Effects
[0109] The communication device 100 according to Embodiment 7 comprises a high-frequency module 1 and a signal processing circuit 102. The signal processing circuit 102 is connected to the high-frequency module 1 and processes high-frequency signals. With this configuration, a communication device 100 having the above-mentioned effects of the high-frequency module 1 can be provided.
[0110] 1 High-frequency module 1T Intermediate product 2 Mounting substrate 2a First main surface (main surface) 2b Second main surface 3, 3A to 3E Protruding electrodes 4, 4C to 4E Convex portion 4p Cut portion 5 Electronic component 5b Back surface 6, 6A Pad (electrode) 21 Conductive layer 22 Via electrode 31 Protrusion 31g Outer edge 31r Connecting portion 32 Electrode layer 51 Component body 51b Back surface 52, 52C to 52E External electrodes 53, 53A to 53E Bump 60 Mounting substrate body 60a Main surface 70 Protrusion body 70s Tip side portion 70t Base side portion 80 Substrate 90 Sheet member 91 Sheet member body 91a Main surface 91s, 91t Overlapping portion 100 Communication device 101 High-frequency module 102 Signal processing circuit 103 Antenna 110a-110c External terminals 120 Switch 120a Common terminal 120b, 120c Select terminals 121 RF signal processing circuit 122 Baseband signal processing circuit 131, 132 Matching circuit 141 Transmit filter 142 Receive filter 151, 152 Matching circuit 161 Power amplifier 162 Low-noise amplifier 102 Signal processing circuit D1 Thickness direction M1, M2 Region N1, N2 Normal Q1 Protrusion direction RL1 Receiving path r1 Distance T1 Contact TL1 Transmitting path α1, α2 Direction angle
Claims
1. A high-frequency module comprising: a mounting substrate; an electronic component disposed on the main surface of the mounting substrate; a protruding electrode provided on the main surface of the mounting substrate and connected to the solder bumps of the electronic component; and a convex portion provided on the protruding electrode, wherein the protruding electrode comprises an insulating protrusion provided on the main surface of the mounting substrate and an electrode layer provided on the surface of the protrusion, and the convex portion is formed in an annular shape on the surface of the electrode layer.
2. The high-frequency module according to claim 1, wherein the protrusion is formed of an insulating material.
3. A high-frequency module according to claim 1 or 2, comprising: a plurality of protruding electrodes including the aforementioned protruding electrodes; and a plurality of protrusions including the aforementioned convex portion, wherein each of the plurality of protrusions is provided on the surface of the plurality of protruding electrodes.
4. The high-frequency module according to claim 3, wherein the plurality of protruding electrodes include two protruding electrodes, the protrusions of each of the two protruding electrodes are connected to each other, and the electrode layers of each of the two protruding electrodes are not connected to each other.
5. The high-frequency module according to claim 3 or 4, wherein the plurality of protrusions include at least two protrusions having different external shapes or different sizes when viewed in a plan view from the normal direction to the main surface of the mounting substrate.
6. The high-frequency module according to any one of claims 1 to 5, wherein the protrusion is formed to surround the outer circumference of the contact that connects to the solder bump on the protruding electrode.
7. The high-frequency module according to any one of claims 1 to 6, wherein the protrusion has an external shape that matches the external shape of the protruding electrode on which the protrusion is provided, when viewed in plan from the direction normal to the main surface of the mounting substrate.
8. A high-frequency module according to any one of claims 1 to 7, further comprising electrodes provided on the main surface of the mounting substrate, wherein the protrusion has a cut portion in which a part of the circumferential direction of the protrusion is open, and the electrodes are provided in a region of the outer peripheral region of the protruding electrode on the main surface of the mounting substrate that has the same direction angle range as the cut portion with respect to the direction angle around the contact point that connects to the solder bump on the protruding electrode, in a plan view from the direction normal to the first main surface of the mounting substrate.
9. A communication device comprising: a high-frequency module according to any one of claims 1 to 8; and a signal processing circuit connected to the high-frequency module for processing high-frequency signals.
10. A method for manufacturing a high-frequency module, comprising: a first step of manufacturing a substrate having an insulating projection body formed on the main surface of a mounting substrate body; a second step of manufacturing a sheet member having an electrode layer laminated on the main surface of an insulating sheet member body and an annular protrusion formed on the electrode layer; and a third step of bonding the sheet member to the main surface of the substrate such that the electrode layer overlaps with the projection body, wherein the mounting substrate body, the overlapping portion of the sheet member body with the mounting substrate body, and the base end portion of the projection body constitute the mounting substrate; the tip end portion of the projection body and the overlapping portion of the sheet member body with the projection body constitute the projection; and the projection and the electrode layer constitute a projection electrode connected to a solder bump of an electronic component.