Semiconductor chip

Abstract

A semiconductor chip 120 comprises: a housing 240; first and second light-emitting elements 11, 21; a switch element 2; an input-side lead frame 210; first and second light-receiving ICs 81, 82; and an output-side lead frame 220. When the switch element 2 is on, the first light-receiving IC 81 receives light from the first light-emitting element 11, and first and second output leads 221, 222 are electrically connected to each other. When the switch element 2 is off, the second light-receiving IC 82 receives light from the second light-emitting element 21, and the second output lead 222 and a third output lead 223 are electrically connected to each other. The input-side lead frame 210 has a second input-side metal plate 320 on which the second light-emitting element 21 and the switch element 2 are placed.

Description

Semiconductor chip

[0001] The present disclosure relates to a semiconductor chip.

[0002] A relay is known as a component that turns on / off and switches signals to a load. There are multiple types of relays, one of which is a relay called a c-contact relay, in which two loads are connected to a relay switch. When the relay is in an open state, a signal transmission path to the other load is established, and the signal transmission path to one load is cut off. Currently, mechanical relays are the mainstream for practically used c-contact relays, but implementation in semiconductor chips, for which further miniaturization is expected, is demanded. As a circuit configuration of such a c-contact type semiconductor chip, for example, the configuration disclosed in Patent Document 1 is known.

[0003] U.S. Pat. No. 4,647,794 Specification

[0004] When implementing a c-contact relay with a semiconductor chip, the mounting relationship of components on a lead frame is important.

[0005] The present disclosure has been made in view of the above point, and an object of the present disclosure is to provide a semiconductor chip that constitutes a c-contact relay and can suppress an increase in size.

[0006] To achieve the above objective, the semiconductor chip according to this disclosure comprises a housing, a first light-emitting element, a second light-emitting element, a switch element, an input-side lead frame, a first light-receiving IC, a second light-receiving IC, and an output-side lead frame. The first light-emitting element, the second light-emitting element, and the switch element are arranged within the housing. The input-side lead frame has a first input lead, a second input lead, and a third input lead, each exposed from the housing, and the first light-emitting element, the second light-emitting element, and the switch element are arranged within the housing. The first light-receiving IC and the second light-receiving IC are each arranged within the housing, with the first light-receiving IC facing the first light-emitting element and the second light-receiving IC facing the second light-emitting element. The output-side lead frame has a first output lead, a second output lead, and a third output lead, each exposed from the housing, and the first light-receiving IC and the second light-receiving IC are mounted on it. When a first voltage is applied to the first input lead and a second voltage lower than the first voltage is applied to the second input lead, the switch element is switched on or off by the voltage of the control signal input to the switch element. Furthermore, when the switch element is on, the first light receiving IC receives the first output light from the first light-emitting element, and the first output lead and the second output lead become conductive. When the switch element is off, the second light receiving IC receives the second output light from the second light-emitting element, and the second output lead and the third output lead become conductive. The input-side lead frame has a first input-side metal plate on which the first light-emitting element is mounted, and a second input-side metal plate on which the second light-emitting element and the switch element are mounted.

[0007] According to this disclosure, it is possible to provide a semiconductor chip that enables c-contact operation while suppressing an increase in size.

[0008] Figure 1A is a perspective view of a semiconductor chip according to an embodiment. Figure 1B is an internal perspective view of the semiconductor chip shown in Figure 1A. Figure 2 is a view of the input-side lead frame from below. Figure 3 is a view of the output-side lead frame from above. Figure 4A is a schematic diagram showing the positional relationship between the first and second light-emitting elements, the first and second photodetector ICs, and the first MOSFET. Figure 4B is a schematic cross-sectional diagram showing the structure between the first and second light-emitting elements and the first and second photodetector ICs. Figure 5A is a circuit diagram of the semiconductor chip. Figure 5B is a diagram showing the operating state of the circuit shown in Figure 5A. Figure 6 is a circuit diagram of a modified semiconductor chip.

[0009] Embodiments of the present disclosure will be described below with reference to the drawings. The following description of preferred embodiments is illustrative in nature and is not intended to limit the present disclosure, its applications, or its uses.

[0010] (Embodiment) [1: Semiconductor Chip Configuration] Figure 1A is a perspective view of a semiconductor chip according to the embodiment. Figure 1B is an internal perspective view of the semiconductor chip shown in Figure 1A. Figure 2 is a view of the input side lead frame from below. Figure 3 is a view of the output side lead frame from above. Figure 4A is a schematic diagram showing the positional relationship between the first light-emitting element and the second light-emitting element, the first light-receiving IC and the second light-receiving IC and the first MOSFET. Figure 4B is a schematic cross-sectional diagram showing the structure between the first light-emitting element and the second light-emitting element, the first light-receiving IC and the second light-receiving IC.

[0011] For the sake of explanation, the shapes of the input lead frame 210, output lead frame 220, and housing 240 in Figures 1A to 4B differ from those of the actual components.

[0012] In this embodiment, the direction in which the first input lead 211 and the first output lead 221 face each other is sometimes called the X direction, the direction in which the first to third input leads 211, 212, and 213 are aligned is sometimes called the Y direction, and the directions perpendicular to the X and Y directions are sometimes called the Z direction. The Z direction is the direction in which the first light-emitting element 11 and the first light-receiving IC 81 face each other. In the Z direction, the side on which the first light-emitting element 11 is provided is sometimes called the top or upper side, and the side on which the first light-receiving IC 81 is provided is sometimes called the bottom or lower side. In addition, the view of the semiconductor chip 120 and its components from above along the Z direction is sometimes called a top view.

[0013] In this specification, "orthogonal," "parallel," or "same" means that the semiconductor chip 120 and its components are orthogonal, parallel, or the same, including their assembly tolerances and manufacturing tolerances. It does not mean that the comparison objects themselves are orthogonal, parallel, or the same in a strict sense.

[0014] The semiconductor chip 120 shown in Figures 1A to 4B is a device in which multiple elements constituting a c-contact relay are mounted separately on an input-side lead frame 210 and an output-side lead frame 220, and the entire device is molded in resin to form a single package. In other words, the semiconductor chip 120 is a resin-molded semiconductor device.

[0015] As shown in Figures 1A to 3, the semiconductor chip 120 includes a first light-emitting element 11, a second light-emitting element 21, a switch element 2, an input-side lead frame 210, a first light-receiving IC 81, and a second light-receiving IC 82. The semiconductor chip 120 further includes an output-side lead frame 220, second to fifth MOSFETs 14, 15, 24, and 25, and a housing 240. Both the input-side lead frame 210 and the output-side lead frame 220 are made from materials obtained by processing a thin copper sheet. The surface of the thin sheet may be plated with another metal.

[0016] The first light-emitting element 11 and the second light-emitting element 21 are, for example, light-emitting diodes (LEDs). The surface of the first light-emitting element 11 has an anode, and the back surface of the first light-emitting element 11 has a cathode. The surface of the second light-emitting element 21 has an anode, and the back surface of the second light-emitting element 21 has a cathode.

[0017] The switch element 2 is a MOSFET, such as an enhancement-type N-channel MOSFET or a depletion-type N-channel MOSFET. A source electrode 2s and a gate electrode 2g are provided on the surface of the switch element 2, and a drain electrode (not shown) is provided on the back surface of the switch element 2. Also, as shown in Figure 4A, in a top view, the switch element 2 is located between the first light-emitting element 11 and the second light-emitting element 21. In the following description, the switch element 2 may be referred to as the first MOSFET 2.

[0018] As shown in Figure 2, the input-side lead frame 210 has a plurality of metal plates. In this embodiment, the input-side lead frame 210 has five metal plates, the first to fifth input-side metal plates 310, 320, 330, 340, and 350.

[0019] The first input-side metal plate 310 has a first light-emitting element mounting section 214. The first light-emitting element 11 is mounted on the first light-emitting element mounting section 214. The cathode of the first light-emitting element 11 is connected to the first light-emitting element mounting section 214 via a conductive adhesive (not shown). In other words, the first input-side metal plate 310 is electrically connected to the cathode of the first light-emitting element 11.

[0020] The first input-side metal plate 310 further has a first suspension lead 310a and a second suspension lead 310b. The first suspension lead 310a is connected to the first light-emitting element mounting section 214, extends in the X direction, then bends in the Y direction and folds back in the X direction again, and is exposed on the first side surface 240a of the housing 240. The second suspension lead 310b extends in the X direction from the Y-direction end of the first light-emitting element mounting section 214, then bends in the Y direction and folds back in the X direction again, and is exposed on the first side surface 240a of the housing 240. Viewed along the Z direction, the first suspension lead 310a is located along the Y direction between the fifth suspension lead 320c and the second suspension lead 310b.

[0021] Furthermore, the first input-side metal plate 310 has a first opening 310c and a first slit 310d. The first opening 310c and the first slit 310d are located opposite each other in the X direction, with the first light-emitting element mounting portion 214 in between.

[0022] The second input side metal plate 320 has a second light-emitting element mounting section 215 and a first MOSFET mounting section 216. The second light-emitting element 21 is mounted on the second light-emitting element mounting section 215. The cathode of the first light-emitting element 11 is connected to the first light-emitting element mounting section 214 via a conductive adhesive (not shown). In other words, the second input side metal plate 320 is electrically connected to the cathode of the second light-emitting element 21. The first MOSFET 2 is mounted on the first MOSFET mounting section 216. The drain electrode of the first MOSFET 2 is connected to the first MOSFET mounting section 216 via a conductive adhesive (not shown). In other words, the second input side metal plate 320 is electrically connected to the drain electrode of the first MOSFET 2.

[0023] The second input side metal plate 320 further has third to fifth suspension leads 320a, 320b, and 320c. The third suspension lead 320a extends in the X direction from the second light-emitting element mounting portion 215, then bends in the Y direction and extends again in the X direction, and is exposed on the first side surface 240a of the housing 240. The fourth suspension lead 320b extends in the X direction from the end of the first MOSFET mounting portion 216 in the Y direction that is closer to the second light-emitting element mounting portion 215, and is exposed on the first side surface 240a of the housing 240. The fifth suspension lead 320c extends in the X direction from the end of the first MOSFET mounting portion 216 in the Y direction that is closer to the first input side metal plate 310, and is exposed on the first side surface 240a of the housing 240.

[0024] Furthermore, the second input-side metal plate 320 has a second opening 320d and a second slit 320e. The second opening 320d and the second slit 320e are located opposite each other in the X direction, with the first light-emitting element mounting portion 214 in between.

[0025] The third input side metal plate 330 has a first input lead 211, a sixth suspension lead 330a, a third opening 330b, and a third slit 330c. The first input lead 211 extends in the X direction and is exposed on the first side surface 240a of the housing 240, and further extends to the outside of the housing 240. The first input lead 211 corresponds to the first external input terminal of the semiconductor chip 120. Viewed along the Z direction, the third input side metal plate 330 extends in the X direction from one end of the first input lead 211 inside the housing 240, then bends in the Y direction and extends in the X direction toward the first side surface 240a. After bending to approach the second light-emitting element mounting portion 215, the portion that extends again in the X direction toward the first side surface 240a is the sixth suspension lead 330a, which is exposed on the first side surface 240a of the housing 240. Furthermore, when viewed along the Z direction, the third input-side metal plate 330 is positioned inside the housing 240 so as to surround the first, second, and fourth input-side metal plates 310, 320, and 340.

[0026] The third opening 330b is located opposite the first light-emitting element mounting section 214 in the Y direction. Near the third opening 330b, the anode of the first light-emitting element 11 and the third input-side metal plate 330 are electrically connected by a wire 230. The third slit 330c is located opposite the second light-emitting element mounting section 215 in the Y direction. Near the third slit 330c, the anode of the second light-emitting element 21 and the third input-side metal plate 330 are electrically connected by a wire 230. In other words, the first input lead 211 is electrically connected to the anodes of the first light-emitting element 11 and the second light-emitting element 21. Furthermore, the drain electrode of the first MOSFET 2 and the first input lead 211 are electrically connected to the second light-emitting element 21 via a wire 230.

[0027] The fourth input side metal plate 340 has a second input lead 212. The second input lead 212 extends in the X direction and is exposed on the first side surface 240a of the housing 240, and further extends to the outside of the housing 240. The second input lead 212 corresponds to the second external input terminal of the semiconductor chip 120. The source electrode 2s of the first MOSFET 2 is electrically connected to the fourth input side metal plate 340 located inside the housing 240 via a wire 230. In other words, the second input lead 212 and the source electrode 2s of the first MOSFET 2 are electrically connected.

[0028] The fifth input side metal plate 350 has a third input lead 213. The third input lead 213 extends in the X direction and is exposed on the first side surface 240a of the housing 240, and further extends to the outside of the housing 240. The third input lead 213 corresponds to the third external input terminal of the semiconductor chip 120. Inside the housing 240, the fifth input side metal plate 350 extends in the X direction opposite to the first side surface 240a, then bends in the Y direction to form a substantially L shape. The first input side metal plate 310 and the fifth input side metal plate 350 are electrically connected via a wire 230. In other words, the third input lead 213 is electrically connected to the cathode of the first light-emitting element 11 via the wire 230 and the first input side metal plate 310. Also, the gate electrode 2g of the first MOSFET 2 and the fifth input side metal plate 350 are electrically connected via the wire 230. In other words, the third input lead 213 is electrically connected to the gate electrode 2g of the first MOSFET 2 via the wire 230.

[0029] As shown in Figure 1B, the first light-receiving IC 81 is mounted on the output-side lead frame 220. The first light-receiving IC 81 is positioned inside the housing 240, facing the first light-emitting element 11 in the Z direction. As shown in Figure 3, two drain electrodes 81d, 81d and a source electrode 81s are provided on the surface of the first light-receiving IC 81. The back surface of the first light-receiving IC 81 is connected to the first light-receiving IC mounting section 224 via an adhesive (not shown).

[0030] As shown in Figure 1B, the second light-receiving IC 82 is mounted on the output-side lead frame 220. The second light-receiving IC 82 is positioned inside the housing 240, facing the second light-emitting element 21 in the Z direction. As shown in Figure 3, two drain electrodes 82d, 82d and a source electrode 82s are provided on the surface of the second light-receiving IC 82. The back surface of the second light-receiving IC 82 is connected to the second light-receiving IC mounting section 225 via an adhesive (not shown).

[0031] The second to fifth MOSFETs 14, 15, 24, and 25 are each MOSFETs such as enhancement-type N-channel MOSFETs and depletion-type N-channel MOSFETs, and are arranged inside the housing 240. As shown in Figure 3, the surface of the second MOSFET 14 is provided with a source electrode 14s and a gate electrode 14g. The back surface of the second MOSFET 14 is provided with a drain electrode (not shown). The surface of the third MOSFET 15 is provided with a source electrode 15s and a gate electrode 15g. The back surface of the third MOSFET 15 is provided with a drain electrode (not shown). The surface of the fourth MOSFET 24 is provided with a source electrode 24s and a gate electrode 24g. The back surface of the fourth MOSFET 24 is provided with a drain electrode (not shown). The surface of the fifth MOSFET 25 is provided with a source electrode 25s and a gate electrode 25g. The back surface of the fifth MOSFET 25 is provided with a drain electrode (not shown).

[0032] As shown in Figure 3, the output-side lead frame 220 has multiple metal plates. In this embodiment, the output-side lead frame 220 has five metal plates, the first to fifth output-side metal plates 410, 420, 430, 440, and 450.

[0033] The first output side metal plate 410 has a second output lead 222 and a third MOSFET mounting portion 227. The second output lead 222 extends in the X direction and is exposed on the second side surface 240b of the housing 240, and further extends to the outside of the housing 240. The second output lead 222 corresponds to the second external output terminal of the semiconductor chip 120. The third MOSFET 15 and the fourth MOSFET 24 are mounted on the third MOSFET mounting portion 227. The drain electrodes of the third MOSFET 15 and the fourth MOSFET 24 are connected to the third MOSFET mounting portion 227 via a conductive adhesive (not shown). In other words, the first output side metal plate 410 is electrically connected to the drain electrodes of the third MOSFET 15 and the fourth MOSFET 24.

[0034] The second output side metal plate 420 has a first output lead 221 and a second MOSFET mounting portion 226. The first output lead 221 extends in the X direction and is exposed on the second side surface 240b of the housing 240, and further extends to the outside of the housing 240. The first output lead 221 corresponds to the first external output terminal of the semiconductor chip 120. The second MOSFET 14 is mounted on the second MOSFET mounting portion 226. The drain electrode of the second MOSFET 14 is connected to the second MOSFET mounting portion 226 via a conductive adhesive (not shown). In other words, the second output side metal plate 420 is electrically connected to the drain electrode of the second MOSFET 14.

[0035] Furthermore, the corner of the first light-receiving IC mounting section 224 facing the second MOSFET mounting section 226 is cut out. The first corner 226a of the second MOSFET mounting section 226, which faces the cut-out corner of the first light-receiving IC mounting section 224, is a wide portion that protrudes toward the first light-receiving IC mounting section 224. Also, in the second MOSFET mounting section 226, the second corner 226b, which is diagonally opposite the first corner 226a, is also a wide portion and protrudes toward the second side surface 240b.

[0036] The third output side metal plate 430 has a third output lead 223 and a fifth MOSFET mounting portion 228. The third output lead 223 extends in the X direction and is exposed on the second side surface 240b of the housing 240, and further extends to the outside of the housing 240. The third output lead 223 corresponds to the third external output terminal of the semiconductor chip 120. The fifth MOSFET 25 is mounted on the fifth MOSFET mounting portion 228. The drain electrode of the fifth MOSFET 25 is connected to the fifth MOSFET mounting portion 228 via a conductive adhesive (not shown). In other words, the third output side metal plate 430 is electrically connected to the drain electrode of the fifth MOSFET 25.

[0037] Furthermore, the corner of the second photodetector IC mounting section 225 facing the fifth MOSFET mounting section 228 is cut out. The third corner 228a of the fifth MOSFET mounting section 228, which faces the cut-out corner of the second photodetector IC mounting section 225, is a wide portion that protrudes toward the second photodetector IC mounting section 225. Also, in the fifth MOSFET mounting section 228, the fourth corner 228b, which is diagonally opposite the third corner 228a, is also a wide portion that protrudes toward the second side surface 240b.

[0038] The fourth output side metal plate 440 has a first light-receiving IC mounting section 224 and a seventh suspension lead 440a. The first light-receiving IC 81 is mounted on the first light-receiving IC mounting section 224. The seventh suspension lead 440a extends in the X direction from the first light-receiving IC mounting section 224, passes between the second MOSFET mounting section 226 and the third MOSFET mounting section 227 of the first output side metal plate 410, and is exposed on the second side surface 240b of the housing 240.

[0039] The fifth output side metal plate 450 has a second light-receiving IC mounting section 225 and an eighth suspension lead 450a. The second light-receiving IC 82 is mounted on the second light-receiving IC mounting section 225. The eighth suspension lead 450a extends in the X direction from the second light-receiving IC mounting section 225, passes between the fifth MOSFET mounting section 228 and the third MOSFET mounting section 227 of the first output side metal plate 410, and is exposed on the second side surface 240b of the housing 240.

[0040] The gate electrode 14g of the second MOSFET 14 is electrically connected to one drain electrode 81d of the first photodetector IC 81 via wire 230. The gate electrode 15g of the third MOSFET 15 is electrically connected to the other drain electrode 81d of the first photodetector IC 81 via wire 230. In addition, the source electrode 14s of the second MOSFET 14 is electrically connected to the source electrode 15s of the third MOSFET 15 via wire 230.

[0041] Further, the source electrode 14s of the second MOSFET 14 is also electrically connected to the first light-receiving IC mounting portion 224 via another wire 230. In addition, the source electrode 81s of the first light-receiving IC 81 is electrically connected to the first light-receiving IC mounting portion 224 via a wire 230. As is clear from this, the source electrode 14s of the second MOSFET 14 is electrically connected to the source electrode 81s of the first light-receiving IC 81 via the wire 230 and the first light-receiving IC mounting portion 224.

[0042] The gate electrode 24g of the fourth MOSFET 24 is electrically connected to one drain electrode 82d of the second light-receiving IC 82 via a wire 230. The gate electrode 25g of the fifth MOSFET 25 is electrically connected to the other drain electrode 82d of the second light-receiving IC 82 via a wire 230. Further, the source electrode 24s of the fourth MOSFET 24 is electrically connected to the source electrode 25s of the fifth MOSFET 25 via a wire 230.

[0043] Further, the source electrode 24s of the fourth MOSFET 24 is also electrically connected to the second light-receiving IC mounting portion 225 via another wire 230. In addition, the source electrode 82s of the second light-receiving IC 82 is electrically connected to the second light-receiving IC mounting portion 225 via a wire 230. As is clear from this, the source electrode 24s of the fourth MOSFET 24 is electrically connected to the source electrode 82s of the second light-receiving IC 82 via the wire 230 and the second light-receiving IC mounting portion 225.

[0044] As shown in FIGS. 4A and 4B, the housing 240 includes an insulating light-shielding resin 250 and a light-transmitting resin 260.

[0045] As shown in FIGS. 4A and 4B, the light-transmitting resin 260 is composed of a first light-transmitting resin 261 and a second light-transmitting resin 262. Also, as shown in FIG. 4B, the light-transmitting resin 260, that is, the first light-transmitting resin 261 and the second light-transmitting resin 262, are disposed inside the light-shielding resin 250. The first light-transmitting resin 261 is disposed between the light-emitting surface of the first light-emitting element 11 and the light-receiving surface of the first light-receiving IC 81, and covers the light-emitting surface of the first light-emitting element 11 and the light-receiving surface of the first light-receiving IC 81. The second light-transmitting resin 262 is disposed between the light-emitting surface of the second light-emitting element 21 and the light-receiving surface of the second light-receiving IC 82, and covers the light-emitting surface of the second light-emitting element 21 and the light-receiving surface of the second light-receiving IC 82. That is, the light from the first light-emitting element 11 propagates only inside the first light-transmitting resin 261, and is configured so as not to leak outside the first light-transmitting resin 261 by the light-shielding resin 250. Similarly, the light from the second light-emitting element 21 propagates only inside the second light-transmitting resin 262, and is configured so as not to leak outside the second light-transmitting resin 262 by the light-shielding resin 250.

[0046] With this configuration, the first light-transmitting resin 261 constitutes an optical coupling portion that optically couples the first photodiode array 12 (see FIG. 5A) provided in the first light-receiving IC 81 and the first light-emitting element 11. Similarly, the second light-transmitting resin 262 constitutes an optical coupling portion that optically couples the second photodiode array 22 (see FIG. 5A) provided in the second light-receiving IC 82 and the second light-emitting element 21.

[0047] The light-shielding resin 250 is, for example, an epoxy resin containing a black pigment. However, the present invention is not particularly limited thereto, and the light-shielding resin 250 may be any material that shields light. The light-transmitting resin 260 is, for example, a transparent silicone resin. However, the present invention is not particularly limited thereto, and the light-transmitting resin 260 may be any material that transmits light.

[0048] By configuring the semiconductor chip 120 in this manner, an input / output insulated semiconductor relay that conducts or non-conducts between the terminals on the output side through optical coupling in a state where the input side and the output side are electrically insulated can be implemented.

[0049] [2: Operation of Semiconductor Chip] FIG. 5A is a circuit diagram of the semiconductor chip. FIG. 5B is a diagram illustrating an operating state of the circuit shown in FIG. 5A.

[0050] The semiconductor chip 120, viewed as an electrical circuit, has the configuration shown in Figure 5A. Here, the first and second input terminals IN1 and IN2 correspond to the first and second input leads 211 and 212, respectively. The control terminal IN3 corresponds to the third input lead 213. The first output terminal T1, the second output terminal T2, and the fourth output terminal T4 correspond to the first to third output leads 221 to 223, respectively. The third output terminal T3 is an output terminal at the same potential as the second output terminal T2 and corresponds to the second output lead 222. In the configurations shown in Figures 1A to 3, only three output leads are provided, but from a circuit perspective, it is equivalent to a configuration with four output terminals T1 to T4. For the sake of explanation, in the following explanation, the second output terminal T2 and the third output terminal T3 may be treated as separate entities.

[0051] Furthermore, as shown in Figure 5A, the semiconductor chip 120 includes a control circuit 1, a first semiconductor relay 10, and a second semiconductor relay 20. The control circuit 1 includes a switch element 2.

[0052] The first semiconductor relay 10 has a first output terminal T1 and a second output terminal T2. The first semiconductor relay 10 also has a first light-emitting element 11, a first light-receiving IC 81, a second MOSFET 14, and a third MOSFET 15. As shown in Figure 5A, the first light-receiving IC 81 has a first photodiode array 12 and a first charge / discharge circuit 13. Both ends of the first photodiode array 12 are connected to the first charge / discharge circuit 13.

[0053] The second semiconductor relay 20 has a third output terminal T3 and a fourth output terminal T4. The second semiconductor relay 20 also has a second light-emitting element 21, a second photo-receiving IC 82, a fourth MOSFET 24, and a fifth MOSFET 25. As shown in Figure 5A, the second photo-receiving IC 82 has a second photodiode array 22 and a second charge / discharge circuit 23. Both ends of the second photodiode array 22 are connected to the second charge / discharge circuit 23.

[0054] The operation of the semiconductor chip 120 configured in this way will be described below.

[0055] Consider the case where a first voltage (H signal) is applied to the first input lead 211, and a second voltage (L signal) lower than the first voltage is applied to the second input lead 212. The second voltage is set to, for example, GND potential. In this case, the switch element 2 is switched on or off according to the voltage of the control signal input to the switch element 2, that is, the voltage of the signal applied to the third input lead 213.

[0056] When the voltage applied to the third input lead 213 is higher than the sum of the second voltage and the threshold voltage of the first MOSFET 2, for example, when the voltage applied to the third input lead 213 is the first voltage, the switch element 2 turns on. At this time, a forward voltage is applied to the first light-emitting element 11, the first light-emitting element 11 lights up, and the first output light is generated. The first photodiode array 12 of the first photo-receiving IC 81 receives the first output light, and a current is generated in the first photodiode array 12. This current charges the first charge / discharge circuit 13. The voltage output from the first charge / discharge circuit 13 turns on the second MOSFET 14 and the third MOSFET 15, respectively, and the first output terminal T1 and the second output terminal T2 become conductive. In other words, the first output lead 221 and the second output lead 222 become conductive. On the other hand, in this case, the anode-cathode voltage of the second light-emitting element 21 is zero. Therefore, no current flows through the second light-emitting element 21, the second light-emitting element 21 is turned off, no second output light is generated, and the third output terminal T3 and the fourth output terminal T4 are not conductive. In other words, the second output lead 222 and the third output lead 223 are not conductive (as shown in the top row of Figure 5B).

[0057] On the other hand, when the voltage applied to the third input lead 213 is lower than the aforementioned value, for example, when the voltage applied to the third input lead 213 is the second voltage, the switch element 2 turns off. As the drain (D) and source (S) of the first MOSFET 2 become non-conductive, no current flows to the first light-emitting element 11, and the first light-emitting element 11 turns off. Therefore, the first input lead 211 and the second input lead 212 become non-conductive. Meanwhile, a forward voltage is applied between the anode and cathode of the second light-emitting element 21. Therefore, the second light-emitting element 21 lights up, and the second output light is generated. The second charge / discharge circuit 23 is charged by the current generated when the second output light is incident on the second photodiode array 22. The voltage output from the second charge / discharge circuit 23 turns on the fourth MOSFET 24 and the fifth MOSFET 25, respectively, and the third output terminal T3 and the fourth output terminal T4 become conductive. In other words, the second output lead 222 and the third output lead 223 are conductive. Also, as mentioned above, the first output lead 221 and the second output lead 222 are not conductive, so the first output terminal T1 and the second output terminal T2 are not conductive (as shown in the second row of Figure 5B).

[0058] Furthermore, when a voltage lower than the aforementioned first voltage, for example, a second voltage, is applied to the first input lead 211, and a voltage equal to or higher than the second voltage is applied to the second input lead 212, no current flows to the first light-emitting element 11. As a result, the switch element 2 turns off, and the first light-emitting element 11 turns off, so the first output terminal T1 and the second output terminal T2 are not conducting. In other words, the first output lead 221 and the second output lead 222 are not conducting. Also, in this case, no current flows to the second light-emitting element 21 and it turns off, so the third output terminal T3 and the fourth output terminal T4 are not conducting. In other words, there is no conducting between the second output lead 222 and the third output lead 223. Furthermore, if the voltages applied to the first input lead 211 and the second input lead 212 are approximately the second voltage, this state will be maintained regardless of whether the voltage applied to the third input lead 213 is the first or second voltage (the third and bottom stages of Figure 5B).

[0059] As explained above, the semiconductor chip 120 functions as a c-contact relay in accordance with the voltage applied to the first to third input leads 211 to 213, respectively. For example, if the first output lead 221 (first output terminal T1) is an NC terminal (normally closed terminal), then the third output lead 223 (fourth output terminal T4) is an NO terminal (normally open terminal). Also, the second output lead 222 (second output terminal T2, third output terminal T3) is a COM terminal (common terminal).

[0060] [3: Effects, etc.] As described above, the semiconductor chip 120 according to this embodiment comprises a housing 240, a first light-emitting element 11, a second light-emitting element 21, and a switch element (first MOSFET) 2 arranged inside the housing 240.

[0061] The semiconductor chip 120 has first to third input leads 211, 212, and 213 that are exposed from the housing 240, and further comprises an input-side lead frame 210 on which the first light-emitting element 11, the second light-emitting element 21, and the switch element 2 are arranged.

[0062] The semiconductor chip 120 is further arranged inside the housing 240 and comprises a first light-receiving IC 81 facing the first light-emitting element 11 and a second light-receiving IC 82 facing the second light-emitting element 21.

[0063] The semiconductor chip 120 has a first output lead 221, a second output lead 222, and a third output lead 223 that are exposed from the housing 240, and further comprises an output-side lead frame 220 on which the first photodetector IC 81 and the second photodetector IC 82 are mounted.

[0064] When a first voltage is applied to the first input lead 211 and a second voltage lower than the first voltage is applied to the second input lead 212, the switch element 2 is switched on or off by the voltage of the control signal input to the switch element 2.

[0065] Furthermore, when the switch element 2 is ON, the first light receiving IC 81 receives the first output light from the first light-emitting element 11, and the first output lead 221 and the second output lead 222 become conductive. When the switch element 2 is OFF, the second light receiving IC 82 receives the second output light from the second light-emitting element 21, and the second output lead 222 and the third output lead 223 become conductive.

[0066] The input-side lead frame 210 includes a first input-side metal plate 310 on which the first light-emitting element 11 is mounted, and a second input-side metal plate 320 on which the second light-emitting element 21 and the switch element 2 are mounted.

[0067] According to this embodiment, the circuit constituting the c-contact relay is located inside the housing 240, and the second light-emitting element 21 and the first MOSFET 2 are mounted on the second input-side metal plate 320. In this way, the lead frame, especially the input-side lead frame 210, is not made more complex, and the size of the semiconductor chip 120 is suppressed.

[0068] The switch element 2 is preferably a first MOSFET 2, which includes a drain electrode electrically connected to a first input lead 211, a source electrode 2s electrically connected to a second input lead 212, and a gate electrode 2g electrically connected to a third input lead 213.

[0069] By using a MOSFET as the switching element 2, the switching element 2 can be made smaller compared to when the switching element 2 is constructed using multiple transistors, and the mounting area on the lead frame can be reduced, thus enabling miniaturization of the semiconductor chip 120.

[0070] Furthermore, the semiconductor chip 120 has a second MOSFET 14 and a third MOSFET 15 which are located inside the housing 240 and electrically connected to the drain electrode 81d of the first photodetector IC 81. The semiconductor chip 120 also has a fourth MOSFET 24 and a fifth MOSFET 25 which are located inside the housing 240 and electrically connected to the drain electrode 82d of the second photodetector IC 82. The output-side lead frame 220 has a first output-side metal plate 410 which is located inside the housing 240 and on which the third MOSFET 15 and the fourth MOSFET 24 are mounted.

[0071] By doing so, the lead frame, especially the output-side lead frame 220, is not made more complex, and the size of the semiconductor chip 120 is suppressed.

[0072] The input-side lead frame 210 has first to sixth suspension leads 310a, 310b, 320a-320c, and 330a. These suspension leads are each exposed on the first side surface 240a of the housing 240. The first side surface 240a is the side of the housing 240 from which the first to third input leads 211-213 are exposed.

[0073] In manufacturing the semiconductor chip 120, a prototype of the input-side lead frame 210 is prepared, in which the first to fifth input-side metal plates 310, 320, 330, 340, and 350 are connected to a single connecting bar. At this time, the third input-side metal plate 330 is connected to the connecting bar by the first input lead 211, the fourth input-side metal plate 340 is connected to the connecting bar by the second input lead 212, and the fifth input-side metal plate 350 is connected to the connecting bar by the third input lead 213.

[0074] The first to sixth suspension leads 310a, 310b, 320a-320c, and 330a connect the first to third input-side metal plates 310, 320, and 330 to the connecting bar. In this way, each element on the input side can be reliably and stably mounted on the prototype of the input-side lead frame 210.

[0075] The output lead frame 220 further includes a first photodetector IC mounting section 224, a second photodetector IC mounting section 225, a second MOSFET mounting section 226, and a fifth MOSFET mounting section 228. The first photodetector IC 81 is mounted on the first photodetector IC mounting section 224. The second photodetector IC 82 is mounted on the second photodetector IC mounting section 225. The second MOSFET 14 is mounted on the second MOSFET mounting section 226, and the second MOSFET mounting section 226 is connected to the first output lead 221. The fifth MOSFET 25 is mounted on the fifth MOSFET mounting section 228, and the fifth MOSFET mounting section 228 is connected to the third output lead 223.

[0076] A seventh suspension lead 440a is connected to the first light-receiving IC mounting section 224, and an eighth suspension lead 450a is connected to the second light-receiving IC mounting section 225. The seventh suspension lead 440a passes between the second MOSFET mounting section 226 and the third MOSFET mounting section 227 of the first output-side metal plate 410 and is exposed on the second side surface 240b of the housing 240. The second side surface 240b is the side of the housing 240 from which the first to third output leads 221 to 223 are exposed. The eighth suspension lead 450a passes between the third MOSFET mounting section 227 and the fifth MOSFET mounting section 228 of the first output-side metal plate 410 and is exposed on the second side surface 240b.

[0077] In manufacturing the semiconductor chip 120, a prototype of the output lead frame 220 is further prepared, in which the first to fifth output side metal plates 410, 420, 430, 440, and 450 are connected to a single connecting bar. At this time, the second output side metal plate 420 is connected to the connecting bar by the first output lead 221, the first output side metal plate 410 is connected to the connecting bar by the second output lead 222, and the third output side metal plate 430 is connected to the connecting bar by the third output lead 223.

[0078] The fourth output-side metal plate 440, on which the first light-receiving IC mounting section 224 is provided, is connected to the connecting bar by the seventh suspension lead 440a. Furthermore, the fifth output-side metal plate 450, on which the second light-receiving IC mounting section 225 is provided, is connected to the connecting bar by the eighth suspension lead 450a. In this way, each element on the output side can be reliably and stably mounted on the prototype of the output-side lead frame 220.

[0079] Furthermore, by arranging the seventh and eighth suspension leads 440a and 450a in the aforementioned configuration relative to the second MOSFET mounting section 226, the fifth MOSFET mounting section 228, and the third MOSFET mounting section 227, the spacing between each part of the output-side lead frame 220 in the Y direction can be reduced. This makes it possible to miniaturize the output-side lead frame 220, and consequently, the semiconductor chip 120.

[0080] In a top view, the corner of the first light-receiving IC mounting section 224 facing the second MOSFET mounting section 226 is cut out. The first corner 226a of the second MOSFET mounting section 226 facing the cut-out corner of the first light-receiving IC mounting section 224 is a wide portion that protrudes toward the first light-receiving IC mounting section 224.

[0081] The corner of the second photodetector IC mounting section 225 facing the fifth MOSFET mounting section 228 is cut out. The third corner 228a of the fifth MOSFET mounting section 228, which faces the cut-out corner of the second photodetector IC mounting section 225, is a wide portion that protrudes toward the second photodetector IC mounting section 225. In addition, the fourth corner 228b of the fifth MOSFET mounting section 228, which is diagonally opposite the third corner 228a, is also a wide portion that protrudes toward the second side surface 240b.

[0082] As described above, each output element is mounted on the output-side lead frame 220 connected to the connecting bar. Each element and the output-side lead frame 220 are connected by wire bonding. If force is applied to the thin plate output-side lead frame 220, it will deform and wire bonding will not work properly. Therefore, fixing jigs (not shown) are used to provide points around the connection points with the wires 230 on the output-side lead frame 220 where the output-side lead frame 220 can be supported and fixed with fixing jigs. As shown in Figure 3, connection points with the wires 230 are provided on the first light-receiving IC mounting section 224 and the second light-receiving IC mounting section 225. Therefore, by providing wide first corners 226a and third corners 228a on the second MOSFET mounting section 226 and fifth MOSFET mounting section 228 located around these points, the connection points with the wires 230 can be reliably supported and fixed. This ensures that the output-side lead frame 220 and the wires 230 are reliably connected. Furthermore, in the second MOSFET mounting section 226, the second corner 226b, which is diagonally opposite the first corner 226a, is also a wide section, and in the fifth MOSFET mounting section 228, the fourth corner 228b, which is diagonally opposite the third corner 228a, is also a wide section. By providing the second corner 226b and the fourth corner 228b, which are wide sections similar to the first corner 226a and the third corner 228a, the connection point with the wire 230 can be reliably supported and fixed. This ensures a reliable connection between the output-side lead frame 220 and the wire 230.

[0083] Furthermore, by making one of the corners of the opposing second MOSFET mounting section 226 and the first light-receiving IC mounting section 224 notched and the other protruding, it is possible to suppress the widening of the distance between the second MOSFET mounting section 226 and the first light-receiving IC mounting section 224. Similarly, by making one of the corners of the opposing fifth MOSFET mounting section 228 and the second light-receiving IC mounting section 225 notched and the other protruding, it is possible to suppress the widening of the distance between the fifth MOSFET mounting section 228 and the second light-receiving IC mounting section 225.

[0084] In this way, the output lead frame 220, and consequently the semiconductor chip 120, can be miniaturized. There is ample space in the Y-direction between the first photodetector IC mounting section 224 and the second photodetector IC mounting section 225. Therefore, by cutting out the corners of the first photodetector IC mounting section 224 and the second photodetector IC mounting section 225, it is possible to suppress the enlargement of the output lead frame 220, and consequently the semiconductor chip 120.

[0085] The first input-side metal plate 310 has a first light-emitting element mounting portion 214 on which the first light-emitting element 11 is mounted, and the second input-side metal plate 320 has a second light-emitting element mounting portion 215 on which the second light-emitting element 21 is mounted. The first input-side metal plate 310 surrounding the first light-emitting element mounting portion 214 is provided with a first opening 310c and a first slit 310d. The second input-side metal plate 320 surrounding the second light-emitting element mounting portion 215 is provided with a second opening 320d and a second slit 320e.

[0086] In manufacturing the semiconductor chip 120, as described above, elements are mounted on the prototypes of the input-side lead frame 210 and the output-side lead frame 220, respectively. Each element is then connected to the input-side lead frame 210 or the output-side lead frame 220 by a wire 230. After this, as shown in Figures 4A and 4B, a first light-transmitting resin 261 is selectively provided between the first light-emitting element 11 and the first light-receiving IC 81. A second light-transmitting resin 262 is also selectively provided between the second light-emitting element 21 and the second light-receiving IC 82. After this, the input-side lead frame 210 and the output-side lead frame 220, including the first light-transmitting resin 261, the second light-transmitting resin 262, and each element, are covered with a light-shielding resin 250, and the resin is cured. After this, each lead connected to the connecting bar is disconnected to obtain the semiconductor chip 120.

[0087] When the first light-transmitting resin 261 and the second light-transmitting resin 262 are being prepared, resin flow may occur, causing the first light-transmitting resin 261 and the second light-transmitting resin 262 to overflow onto the input-side lead frame 210 surrounding the first light-emitting element 11 and the second light-emitting element 21, respectively. If this happens, the first output light from the first light-emitting element 11 and the second output light from the second light-emitting element 21 may leak out and unintentionally irradiate other elements. For example, the first output light from the first light-emitting element 11 may be incident on the second light-receiving IC 82, potentially causing the second light-receiving IC 82 to malfunction.

[0088] On the other hand, by providing the aforementioned first opening 310c and second opening 320d, as well as the first slit 310d and second slit 320e, it is possible to prevent the first light-transmitting resin 261 and the second light-transmitting resin 262 from overflowing and forming on the input-side lead frame 210 even if resin flow occurs. This suppresses malfunctions of the first light-receiving IC 81 and the second light-receiving IC 82, and reduces malfunctions of the semiconductor chip 120. Furthermore, operational reliability can be improved.

[0089] Furthermore, in a top view, the semiconductor chip 120 has the first MOSFET 2 positioned between the first light-emitting element 11 and the second light-emitting element 21. This simplifies the shape of the input-side lead frame 210. It also reduces the number of wires 230 that electrically connect the elements. As a result, the semiconductor chip 120 can be miniaturized.

[0090] Furthermore, leakage of the first output light from the first light-emitting element 11, which could cause the second light-receiving IC 82 to malfunction, can be suppressed. Leakage of the second output light from the second light-emitting element 21, which could cause the first light-receiving IC 81 to malfunction, can also be suppressed. As a result, malfunctions of the semiconductor chip 120 can be reduced, and operational reliability can be improved.

[0091] <Modified Example> Figure 6 is a circuit diagram of a semiconductor chip according to a modified example. For the sake of clarity, in Figure 6, the same reference numerals are used for parts that are the same as in the embodiment, and detailed explanations are omitted.

[0092] The semiconductor chip 120 shown in Figure 6 differs from the semiconductor chip 120 shown in Figure 5A in that the third MOSFET 15 and the fourth MOSFET 24 are omitted. Also, although not shown, the third MOSFET mounting portion 227 of the first output side metal plate 410 is omitted.

[0093] Furthermore, the source electrode 14s of the second MOSFET 14 and the source electrode 25s of the fifth MOSFET 25 are electrically connected. Also, the second output lead 222 is electrically connected to the connection point between the source electrode 14s of the second MOSFET 14 and the source electrode 25s of the fifth MOSFET 25. The source electrode 14s and the source electrode 25s may be connected by a wire 230. The source electrode 14s and the source electrode 25s may be electrically connected by connecting the source electrode 14s to the first output side metal plate 410 and the source electrode 25s to the first output side metal plate 410, respectively, with wires 230.

[0094] Although not shown in the diagram, the on / off states of the first light-emitting element 11 and the second light-emitting element 21 when a first voltage (H signal) or a second voltage (L signal) is applied to the first input terminal IN1, the second input terminal IN2, and the control terminal IN3, respectively, are the same as those shown in Figure 5B. Similarly, the on / off states between the first output terminal T1 and the second output terminal T2 are the same as those shown in Figure 5B. Furthermore, the on / off states between the third output terminal T3 and the fourth output terminal T4 when a first voltage or a second voltage is applied to the first input terminal IN1, the second input terminal IN2, and the control terminal IN3, respectively, are the same as those shown in Figure 5B.

[0095] Depending on the voltage rating of the load connected to the output side and the current flowing through the load, the third MOSFET 15 and the fourth MOSFET 24 can be omitted, as shown in this modified example.

[0096] Even in this configuration, the semiconductor chip 120 functions as a c-contact relay. Furthermore, similar to the embodiment, the circuit constituting the c-contact relay is located inside the housing 240, and the second light-emitting element 21 and the first MOSFET 2 are mounted on the second input-side metal plate 320. This configuration avoids complicating the input-side lead frame 210 and prevents the semiconductor chip 120 from becoming larger. Additionally, since the third MOSFET mounting section 227 is omitted, the output-side lead frame 220 is not complicated, further preventing the semiconductor chip 120 from becoming larger.

[0097] (Other Embodiments) In the example shown in Figure 2, a first opening 310c and a first slit 310d are provided on the first input-side metal plate 310 surrounding the first light-emitting element mounting section 214. Also, a second opening 320d and a second slit 320e are provided on the second input-side metal plate 320 surrounding the second light-emitting element mounting section 215. However, the invention is not limited to this, and the first input-side metal plate 310 may have two first openings 310c or two first slits 310d sandwiching the first light-emitting element mounting section 214. Similarly, the second input-side metal plate 320 may have two second openings 320d or two second slits 320e sandwiching the second light-emitting element mounting section 215. In this case as well, even if resin flow occurs, it is possible to prevent the first translucent resin 261 and the second translucent resin 262 from overflowing and forming on the input-side lead frame 210. This suppresses malfunctions of the first light receiving IC 81 and the second light receiving IC 82, thereby reducing malfunctions of the semiconductor chip 120. Furthermore, it improves operational reliability.

[0098] The semiconductor chip of this disclosure is useful because it can constitute a c-contact relay while suppressing its size increase.

[0099] 1 Control circuit 2 First MOSFET (switch element) 2g Grid gate 2s Source electrode 10 First semiconductor relay 11 First light-emitting element 12 First photodiode array 13 First charge / discharge circuit 14 Second MOSFET 14g Grid gate 14s Source electrode 15 Third MOSFET 15g Grid gate 15s Source electrode 20 Second semiconductor relay 21 Second light-emitting element 22 Second photodiode array 23 Second charge / discharge circuit 24 Fourth MOSFET 24g Grid gate 24s Source electrode 25 Fifth MOSFET 25g Grid gate 25s Source electrode 81 First photodetector IC 81d Drain electrode 81s Source electrode 82 Second photodetector IC 82d Drain electrode 82s Source electrode 120 Semiconductor chip 210 Input side lead frame 211 First input lead 212 Second input lead 213 Third input lead 214 215 First light-emitting element mounting section (input side lead frame) 216 Second light-emitting element mounting section (input side lead frame) 216 First MOSFET mounting section (input side lead frame) 220 Output side lead frame 221 First output lead 222 Second output lead 223 Third output lead 224 First light-receiving IC mounting section (output side lead frame) 225 Second light-receiving IC mounting section (output side lead frame) 226 Second MOSFET mounting section (output side lead frame) 226a First corner 227 Third MOSFET mounting section (output side lead frame) 228 Fifth MOSFET mounting section (output side lead frame) 228a Third corner 230 Wire 240 Housing 250 Light-shielding resin 260 Light-transmitting resin 261, 262 First and second light-transmitting resins 310, 320, 330, 340, 350 1st to 5th input side metal plates (input side lead frame) 310a 1st suspension lead 310b 2nd suspension lead 310c 1st opening 310d 1st slit 320a 3rd suspension lead 320b 4th suspension lead 320c 5th suspension lead 320d 2nd opening 320e 2nd slit 330a 6th suspension lead 330b 3rd opening 330c 3rd slit410, 420, 430, 440, 450 First to fifth output side metal plates (output side lead frames) 440a Seventh suspension lead 450a Eighth suspension lead IN1 First input terminal IN2 Second input terminal IN3 Control terminal T1 to T4 First to fourth output terminals

Claims

1. The device comprises: a housing; a first light-emitting element, a second light-emitting element, and a switch element, all located within the housing; an input-side lead frame having a first input lead, a second input lead, and a third input lead, each exposed from the housing, on which the first light-emitting element, the second light-emitting element, and the switch element are arranged; a first light-receiving IC, each located within the housing and facing the first light-emitting element; a second light-receiving IC, each facing the second light-emitting element; and an output-side lead frame having a first output lead, a second output lead, and a third output lead, each exposed from the housing, on which the first light-receiving IC and the second light-receiving IC are mounted; wherein when a first voltage is applied to the first input lead and a second voltage lower than the first voltage is applied to the second input lead, the switch element is switched on or off by the voltage of the control signal input to the switch element, When the switch element is ON, the first light receiving IC receives a first output light from the first light-emitting element, and the first output lead and the second output lead become conductive. When the switch element is OFF, the second light receiving IC receives a second output light from the second light-emitting element, and the second output lead and the third output lead become conductive. The input-side lead frame comprises a first input-side metal plate on which the first light-emitting element is mounted, and a second input-side metal plate on which the second light-emitting element and the switch element are mounted.

2. The semiconductor chip according to claim 1, wherein the switching element is a first MOSFET, comprising a drain electrode electrically connected to the first input lead, a source electrode electrically connected to the second input lead, and a gate electrode electrically connected to the third input lead.

3. The semiconductor chip according to claim 2, further comprising: a second MOSFET disposed within the housing and electrically connected to the drain electrode of the first photodetector IC; and a fifth MOSFET disposed within the housing and electrically connected to the drain electrode of the second photodetector IC.

4. The semiconductor chip according to claim 3, further comprising: a third MOSFET disposed within the housing and electrically connected to the drain electrode of the first photodetector IC; and a fourth MOSFET disposed within the housing and electrically connected to the drain electrode of the second photodetector IC, wherein the output-side lead frame has a first output-side metal plate disposed within the housing on which the third MOSFET and the fourth MOSFET are mounted.

5. The semiconductor chip according to claim 4, wherein the output-side lead frame further comprises: a first photodetector IC mounting section on which the first photodetector IC is mounted; a second photodetector IC mounting section on which the second photodetector IC is mounted; a second MOSFET mounting section on which the second MOSFET is mounted and connected to the first output lead; and a fifth MOSFET mounting section on which the fifth MOSFET is mounted and connected to the third output lead, wherein a suspension lead is connected to the first photodetector IC mounting section and the second photodetector IC mounting section, respectively; the suspension lead connected to the first photodetector IC mounting section passes between the second MOSFET mounting section and the first output-side metal plate and is exposed on the second side surface where the first output lead, the second output lead, and the third output lead are exposed in the housing; and the suspension lead connected to the second photodetector IC mounting section passes between the first output-side metal plate and the fifth MOSFET mounting section and is exposed on the second side surface.

6. In a top view, the corner of the first photodetector IC mounting portion facing the second MOSFET mounting portion is notched, and the corner of the second MOSFET mounting portion facing the notched corner of the first photodetector IC mounting portion is a wide portion that protrudes toward the first photodetector IC mounting portion; the corner of the second photodetector IC mounting portion facing the fifth MOSFET mounting portion is notched, and the corner of the fifth MOSFET mounting portion facing the notched corner of the second photodetector IC mounting portion is a wide portion that protrudes toward the second photodetector IC mounting portion, as described in claim 5.

7. The semiconductor chip according to any one of claims 1 to 6, wherein the input-side lead frame has a plurality of suspension leads, and the plurality of suspension leads are exposed on the first side surface of the housing where the first input lead, the second input lead, and the third input lead are exposed.

8. The semiconductor chip according to any one of claims 1 to 7, wherein the first input side metal plate has a first light-emitting element mounting portion on which the first light-emitting element is mounted, the second input side metal plate has a second light-emitting element mounting portion on which the second light-emitting element is mounted, a slit and / or an opening is provided in the first input side metal plate around the first light-emitting element mounting portion, and the slit and / or the opening is provided in the second input side metal plate around the second light-emitting element mounting portion.

9. The semiconductor chip according to any one of claims 1 to 8, wherein, in a top view, the switch element is arranged between the first light-emitting element and the second light-emitting element.

Images