Heater unit and stage

Abstract

A heater unit according to the present invention includes a resistance heating element, a first ceramic molded body that includes a groove in which the resistance heating element is disposed, and a second ceramic molded body that covers the resistance heating element disposed in the groove. A stage according to the present invention includes a first metal plate, a second metal plate that is joined to the first metal plate, and a resistance heating element that is surrounded by a ceramic member and is embedded in at least one of the first metal plate and the second metal plate between the first metal plate and the second metal plate.

Description

Heater unit and stage

[0001] One embodiment of the present invention relates to a heater unit including a resistance heating element. The present invention also relates to a stage equipped with a heater unit including a resistance heating element.

[0002] Semiconductor devices are incorporated into almost all electronic devices and play a crucial role in their functionality. Semiconductor devices utilize the semiconductor properties of materials such as silicon, and are constructed by stacking semiconductor films, insulating films, and conductive films on a substrate, and then patterning these films. These films are stacked using methods such as vapor deposition, sputtering, chemical vapor deposition (CVD), atomic layer deposition (ALD), or chemical reactions of the substrate, and then formed into a predetermined shape using photolithography.

[0003] The characteristics of the film described above are greatly influenced by the conditions under which the film is deposited or the conditions of photolithography. One of these conditions is the temperature of the substrate. The temperature of the substrate is controlled by adjusting the temperature of a heater embedded in the stage on which the substrate is placed. For example, a stage in which a sheath heater, which is one type of heater, is embedded is known (see, for example, Patent Document 1). A sheath heater has a structure in which a heating wire (heater wire) is inserted into a metal sheath, and an insulating material is filled inside the metal sheath so that the heating wire does not come into contact with the metal sheath.

[0004] Japanese Patent Publication No. 2009-91660

[0005] In recent years, the miniaturization of semiconductor devices has progressed, and there is a demand for improved uniformity of the temperature distribution of the substrate. Therefore, it is necessary to improve the accuracy of temperature control on the stage on which the substrate is placed. However, with sheath heaters, it is difficult to reduce the diameter of the metal sheath from the standpoint of preventing contact between the heating element and the metal sheath, and it is difficult to form a pattern shape with a large curvature. Therefore, the pattern shape of sheath heaters is limited in terms of design, and it can be said that sheath heaters have a low degree of design freedom. In addition, when forming the pattern shape of a sheath heater, the heating element expands and contracts, causing the heating element to become denser or sparser. As a result, even multiple sheath heaters with the same pattern shape will have variations in temperature distribution.

[0006] One embodiment of the present invention aims to provide a heater unit with a high degree of design flexibility. Another embodiment of the present invention aims to provide a stage that improves the uniformity of the temperature distribution of the substrate on which it is placed.

[0007] A heater unit according to one embodiment of the present invention includes a resistance heating element, a first ceramic molded body including a groove in which the resistance heating element is disposed, and a second ceramic molded body covering the resistance heating element disposed in the groove.

[0008] The resistance heating element may have a flat plate shape.

[0009] The material of the second ceramic molded body may be different from the material of the first ceramic molded body.

[0010] The thickness of the second ceramic molded body may differ from the thickness of the first ceramic molded body.

[0011] The first ceramic molded body includes a first fitting portion, and the second ceramic molded body may include a second fitting portion that fits with the first fitting portion.

[0012] The first ceramic molded body and the second ceramic molded body may be bonded together with an adhesive.

[0013] In a cross-sectional view, the width of the second ceramic molded body may be greater than the width of the first ceramic molded body.

[0014] Furthermore, a stage according to one embodiment of the present invention includes a first metal plate, a second metal plate joined to the first metal plate, and a resistance heating element surrounded by a ceramic member, which is embedded between the first metal plate and the second metal plate and embedded in at least one of the first metal plate and the second metal plate.

[0015] The ceramic member may be in contact with the first metal plate and the second metal plate.

[0016] The ceramic member may include a first ceramic molded body having a groove in which a resistance heating element is placed, and a second ceramic molded body covering the resistance heating element placed in the groove.

[0017] The resistance heating element has a pattern shape that includes a first heating region and a second heating region that extends from the first heating region and is adjacent to the first heating region at a distance from it. A gap is provided between the first heating region and the second heating region in which the first metal plate and the second metal plate are not joined, and the ceramic member may be filled in the gap.

[0018] The gap may be filled with an insulator different from the ceramic component.

[0019] The first metal plate and the second metal plate may be joined by diffusion bonding.

[0020] The heater unit according to one embodiment of the present invention offers a high degree of design flexibility, allowing for the design of a heater unit that takes into account the uniformity of the temperature distribution of the substrate placed on the stage. Furthermore, the stage according to one embodiment of the present invention, equipped with the above-mentioned heater unit, can improve the uniformity of the temperature distribution of the substrate.

[0021] This is a schematic perspective view showing the configuration of the stage in one embodiment of the present invention. This is a schematic plan view showing the arrangement of the heater units within the stage in one embodiment of the present invention. This is a schematic cross-sectional view showing the arrangement of the heater units within the stage in one embodiment of the present invention. This is a schematic exploded view showing the arrangement of the heater units within the stage in one embodiment of the present invention. This is a schematic cross-sectional view showing the configuration of the heater unit in one embodiment of the present invention. This is a schematic exploded view showing the configuration of the heater unit in one embodiment of the present invention. This is a schematic cross-sectional view showing the arrangement of the heater units within the stage in one embodiment of the present invention. This is a schematic cross-sectional view showing the configuration of the stage in one embodiment of the present invention. This is a schematic cross-sectional view showing the configuration of the stage in one embodiment of the present invention. This is a schematic cross-sectional view showing the configuration of the heater unit in one embodiment of the present invention. This is a schematic exploded view showing the configuration of the heater unit in one embodiment of the present invention. This is a schematic exploded view showing the configuration of the heater unit in one embodiment of the present invention. This is a schematic cross-sectional view showing the configuration of the stage in one embodiment of the present invention. This is a schematic cross-sectional view showing the configuration of the stage in one embodiment of the present invention. This is a schematic cross-sectional view showing the configuration of the etching apparatus in one embodiment of the present invention. This is a schematic cross-sectional view showing the configuration of the CVD apparatus in one embodiment of the present invention. This is a schematic cross-sectional view showing the configuration of a sputtering apparatus in one embodiment of the present invention. This is a schematic cross-sectional view showing the configuration of a deposition apparatus in one embodiment of the present invention. This is a schematic cross-sectional view showing the configuration of an ALD apparatus in one embodiment of the present invention.

[0022] The embodiments of the invention disclosed in this application will be described below with reference to the drawings. However, the present invention can be implemented in various forms without departing from its spirit, and should not be construed as being limited to the descriptions of the embodiments exemplified below.

[0023] In order to clarify the explanation, the drawings may schematically represent the width, thickness, and shape of the components compared to the actual embodiments, but these are merely examples and do not limit the interpretation of the present invention. Furthermore, in this specification and drawings, components having the same function as those described in previously shown drawings may be denoted by the same reference numerals, and redundant explanations may be omitted. Also, for the sake of convenience in explanation, the terms "up" or "down" are used, but "up" or "down" respectively indicate the orientation when the stage is in use (when the substrate is placed).

[0024] In this specification and in the drawings, the same symbol is used to refer to multiple identical or similar components collectively, and when each of these components is to be distinguished, an uppercase letter may be added. When multiple parts of a single component are to be distinguished, the same symbol is used, and a hyphen and a natural number may be added.

[0025] <First Embodiment> Referring to Figures 1 to 7, a stage 10 and a heater unit 400 arranged within the stage 10 according to one embodiment of the present invention will be described.

[0026] [1. Configuration of Stage 10] Figure 1 is a schematic perspective view showing the configuration of Stage 10 in one embodiment of the present invention.

[0027] As shown in Figure 1, the stage 10 includes a first metal plate 100, a second metal plate 200, and a shaft 300. The second metal plate 200 is superimposed on the first metal plate 100 and is located beneath the first metal plate 100. The second metal plate 200 is joined to the first metal plate 100 by brazing or diffusion bonding. As will be described in detail later, it is preferable that the first metal plate 100 and the second metal plate 200 are joined using solid-state bonding such as diffusion bonding. The shaft 300 is located beneath the second metal plate 200 so as to support the first metal plate 100 and the second metal plate 200. The shaft 300 is connected to the second metal plate 200 by brazing, welding, or screw fastening.

[0028] Although Figure 1 shows the configuration of the stage 10 including the shaft 300, in this embodiment, a configuration of the stage 10 that does not include the shaft 300 can also be adopted.

[0029] A semiconductor substrate containing silicon or a compound semiconductor, or an insulating substrate containing a quartz substrate or glass, is placed on the first metal plate 100. Therefore, the upper surface of the first metal plate 100 is flat. For example, titanium, aluminum, or stainless steel can be used as the material for the first metal plate 100.

[0030] Although not shown in the figures, the first metal plate 100 may be provided with an electrostatic chuck for fixing the substrate, through holes for supplying a gas with high thermal conductivity such as helium between the substrate and the stage 10, or a recirculation channel for circulating a liquid medium.

[0031] The same metal as that used for the first metal plate 100 can be used as the material for the second metal plate 200. The metal contained in the second metal plate 200 may be the same as or different from the metal contained in the first metal plate 100. If the metal contained in the first metal plate 100 and the metal contained in the second metal plate 200 are different, the difference in thermal expansion coefficients is 10 × 10 －６It is preferable that each metal be selected such that the temperature is less than or equal to / K. This suppresses deformation of the stage 10 due to differences in thermal expansion, thereby improving the reliability of the stage 10.

[0032] The shaft 300 has a hollow structure to house the wiring electrically connected to the heater unit 400. By supplying current from the wiring to the heater unit 400, the heater unit 400 generates heat, which can heat the substrate via the first metal plate. Furthermore, if an electrostatic chuck is provided on the stage 10, the wiring connected to the electrostatic chuck is also housed within the shaft 300.

[0033] Although not shown in the diagram, the shaft 300 may be connected to a rotating mechanism. By connecting the shaft 300 to a rotating mechanism, the stage 10 can be rotated around the long axis of the shaft 300.

[0034] [2. Configuration of Heater Unit 400] Figure 2 is a schematic plan view showing the arrangement of the heater unit 400 within the stage 10 in one embodiment of the present invention. Figure 2 is a plan view (so-called top view) seen from above the first metal plate 100, but for the sake of explanation, the illustration of the first metal plate 100 is omitted. Also, in Figure 2, the shaft 300 is shown by a dotted line. Figure 3 is a schematic cross-sectional view showing the arrangement of the heater unit 400 within the stage 10 in one embodiment of the present invention. Specifically, Figure 3 is a cross-sectional view of the stage 10 cut along the line A-B shown in Figure 2. Figure 4 is a schematic exploded view showing the arrangement of the heater unit 400 within the stage 10 in one embodiment of the present invention. Specifically, Figure 4 shows a cross-sectional view of the stage 10 exploded to correspond to the cross-sectional view of the stage 10 shown in Figure 3.

[0035] As shown in Figures 2 to 4, the stage 10 includes a heater unit 400. The heater unit 400 is positioned in a groove 210 provided in the second metal plate 200. When the heater unit 400 is positioned in the groove 210 and the first metal plate 100 and the second metal plate 200 are joined, the groove 210 in which the heater unit 400 is positioned is closed by the first metal plate 100. In this way, the heater unit 400 is embedded in the second metal plate 200.

[0036] As shown in Figure 2, in a plan view, the heater unit 400 has a pattern shape that extends within the plane of the second metal plate 200. For example, one heater unit 400 has a pattern shape that extends across the entire plane of the second metal plate 200, from the inside to the outside, by repeatedly bending. Both ends of one heater unit 400 are electrically connected to wiring housed in the shaft 300 at a position where they overlap with the shaft 300. The groove 210 has a shape that corresponds to the pattern shape of the heater unit 400. In other words, the groove 210 is provided along the extending direction of the heater unit 400.

[0037] Figures 2 to 4 show the first pattern region 400-1 and the second pattern region 400-2 of the heater unit 400. Each of the first pattern region 400-1 and the second pattern region 400-2 is a part of the heater unit 400, and the second pattern region 400-2 is adjacent to the first pattern region 400-1 outside of it, with a gap between them. When the heater unit 400 is embedded in the second metal plate 200, a part of the second metal plate 200 (a partition wall forming the groove 210) fits between the first pattern region 400-1 and the second pattern region 400-2, filling the gap. For the sake of explanation, the first pattern region 400-1 and the second pattern region 400-2 may be referred to as two adjacent pattern regions below. Figure 2 illustrates two adjacent pattern regions in the direction from the inside to the outside, but the two adjacent pattern regions only need to be adjacent in a certain direction.

[0038] In stage 10, when the heater unit 400 embedded in the second metal plate 200 generates heat, the first metal plate 100 is heated. As will be described in detail later, compared with a sheath heater, the heater unit 400 can have a more complex pattern shape. For example, the heater unit 400 can have a pattern shape including a pattern region having a large curvature or a pattern region having different widths, or a pattern shape in which distances between two adjacent pattern regions are different. Therefore, in stage 10, the heater unit 400 having a predetermined pattern shape that considers the temperature distribution of a substrate placed on the first metal plate 100 can be manufactured. In other words, the heater unit 400 has a high degree of design freedom.

[0039] 3 and 4 show a configuration in which the width of the heater unit 400 substantially matches the width of the groove 210, that is, a configuration in which the side surface of the heater unit 400 is in contact with the side surface of the groove 210, but a gap may be provided between the side surface of the heater unit 400 and the side surface of the groove 210. On the other hand, since the heater unit 400 heats the first metal plate 100, the upper surface of the heater unit 400 is preferably in contact with the first metal plate 100.

[0040] Here, with reference to FIGS. 5 and 6, the detailed configuration of the heater unit 400 will be described.

[0041] FIG. 5 is a schematic cross-sectional view showing the configuration of the heater unit 400 in one embodiment of the present invention. FIG. 6 is a schematic exploded view showing the configuration of the heater unit 400 in one embodiment of the present invention. Specifically, FIG. 6 shows a cross-sectional view of an exploded configuration of the heater unit 400 that corresponds to the cross-sectional view of the heater unit 400 illustrated in FIG. 5.

[0042] As shown in FIGS. 5 and 6, the heater unit 400 includes a resistance heating element 410 and a ceramic member 420. The shape of the resistance heating element 410 corresponds to the shape of the heater unit 400. That is, the resistance heating element 410 has a predetermined pattern shape including various pattern regions. The ceramic member 420 is provided so as to surround the resistance heating element 410. Specifically, the ceramic member 420 is provided so as to surround the pattern region of the resistance heating element 410 along the extending direction of the pattern region. The resistance heating element 410 generates Joule heat when current is supplied thereto. The heater unit 400 can generate heat when the resistance heating element 410 generates Joule heat. On the other hand, the ceramic member 420 has insulating properties and prevents electrical short-circuiting of the resistance heating element 410. Even when the heater unit 400 is embedded in the second metal plate 200, the ceramic member 420 exists between the resistance heating element 410 and the first metal plate 100 as well as the second metal plate 200. Therefore, the resistance heating element 410 does not contact the first metal plate 100 and the second metal plate 200, so that electrical short-circuiting between the resistance heating element 410, and the first metal plate 100 and the second metal plate 200 is prevented.

[0043] The pattern region of the resistance heating element 410 has a thickness smaller than a width. Hereinafter, for convenience of explanation, the thickness and the width of the pattern region of the resistance heating element 410 are respectively described as the thickness and the width of the resistance heating element 410. The thickness of the resistance heating element 410 is, for example, 200 µm or more and 2000 µm or less, preferably 500 µm or more and 1000 µm or less, but is not limited thereto. The resistance heating element 410 can be produced from a thin flat plate that is easy to process. For example, the resistance heating element 410 having a predetermined pattern shape can be produced using wet etching or a laser cutter. Photolithography enables microfabrication, and the resistance heating element 410 having a complicated pattern shape can also be produced. However, the production method of the resistance heating element 410 is not limited thereto, and the resistance heating element 410 can also be produced by punching or the like.

[0044] As the material for the resistive heating element 410, for example, metals such as molybdenum (Mo) or tungsten (W), alloys containing nickel (Ni) and chromium (Cr), or alloys containing iron (Fe), chromium (Cr), and aluminum (Al) can be used. However, the material for the resistive heating element 410 is not limited to these. Any material that generates Joule heat when current is supplied can be used as the material for the resistive heating element 410, and it is preferable that the material is easy to form a pattern shape with.

[0045] The ceramic member 420 includes a first ceramic molded body 420-1 and a second ceramic molded body 420-2. The first ceramic molded body 420-1 has a groove 421-1 for arranging a resistance heating element 410. The groove 421-1 is provided along the extending direction of the pattern area of ​​the resistance heating element 410. The second ceramic molded body 420-2 is positioned to cover the groove 421-1. The first ceramic molded body 420-1 and the second ceramic molded body 420-2 form the outer shape of the heater unit 400. In plan view, the width of each of the first ceramic molded body 420-1 and the second ceramic molded body 420-2 corresponds to the width of the pattern area of ​​the heater unit 400. The second ceramic molded body 420-2 is positioned on the first ceramic molded body 420-1 so as to cover the resistance heating element 410 which is located in the groove 421-1 of the first ceramic molded body 420-1. In cross-sectional view, the width of the second ceramic molded body 420-2 is greater than the width of the resistance heating element 410 and is approximately the same as the width of the first ceramic molded body 420-1.

[0046] The thickness of the first ceramic molded body 420-1 and the thickness of the second ceramic molded body 420-2 may be the same or different. For example, if the thickness of the first ceramic molded body 420-1 and the thickness of the second ceramic molded body 420-2 are different, the thickness of the second ceramic molded body 420-2 located on the first metal plate 100 side can be made smaller than the thickness of the first ceramic molded body 420-1. In this case, heat is more easily conducted from the resistance heating element 410 to the first metal plate 100. That is, it is possible to increase heat conduction from the resistance heating element 410 to the first metal plate 100 while suppressing heat conduction from the resistance heating element 410 to the second metal plate 200.

[0047] For example, aluminum oxide (Al) can be used as the material for the ceramic component 420. ２ O ３ An insulator such as ) or magnesium oxide (MgO) can be used. However, the material of the ceramic member 420 is not limited to these. It is preferable to use a material that has insulating properties and can be molded into a three-dimensional shape as the material of the ceramic member 420.

[0048] The first ceramic molded body 420-1 and the second ceramic molded body 420-2 may be made of the same material or different materials. For example, if the material of the first ceramic molded body 420-1 and the material of the second ceramic molded body 420-2 are different, the second ceramic molded body 420-2 can be made of a material with a higher thermal conductivity than the first ceramic molded body 420-1. In this case, heat is more easily conducted from the resistance heating element 410 to the first metal plate 100. That is, it is possible to increase the heat conduction from the resistance heating element 410 to the first metal plate 100 while suppressing the heat conduction from the resistance heating element 410 to the second metal plate 200.

[0049] The second ceramic molded body 420-2 may be positioned without being bonded to the first ceramic molded body 420-1, or it may be bonded to the first ceramic molded body 420-1 via an adhesive. When the first ceramic molded body 420-1 and the second ceramic molded body 420-2 are bonded together, an epoxy adhesive or the like can be used.

[0050] Each of the first ceramic molded body 420-1 and the second ceramic molded body 420-2 can be manufactured using molding processes such as injection molding or pressure molding, or by processing with a 3D printer.

[0051] [3. Method for Manufacturing the Heater Unit 400 and Stage 10] The heater unit 400 can be manufactured by individually manufacturing the resistance heating element 410, the first ceramic molded body 420-1, and the second ceramic molded body 420-2, and then assembling them. Specifically, the resistance heating element 410 is manufactured using photolithography, and the first ceramic molded body 420-1 and the second ceramic molded body 420-2 are manufactured using a 3D printer. Then, the resistance heating element 410 is placed in the groove 421-1 of the first ceramic molded body 420-1, and the second ceramic molded body 420-2 is placed on top of the first ceramic molded body 420-1. This allows the heater unit 400 to be manufactured. Alternatively, the heater unit 400 can be placed in the groove 210 of the second metal plate 200, and the first metal plate 100 and the second metal plate 200 are joined together. This allows for the manufacture of stage 10.

[0052] If the first ceramic molded body 420-1 and the second ceramic molded body 420-2 of the heater unit 400 are not bonded together, brazing may cause the brazing material to enter between the first ceramic molded body 420-1 and the second ceramic molded body 420-2 when joining the first metal plate 100 and the second metal plate 200. In this case, the resistance heating element 410 may be electrically connected to the first metal plate 100 and the second metal plate 200 via the brazing material, potentially causing an electrical short circuit. On the other hand, when joining the first metal plate 100 and the second metal plate 200 using solid-state bonding such as diffusion bonding, no electrical short circuit occurs between the resistance heating element 410 and the first metal plate 100 and the second metal plate 200. Therefore, it is preferable that the stage 10 be manufactured using diffusion bonding.

[0053] Figure 7 is a schematic cross-sectional view showing the arrangement of the heater unit 400 within the stage 10 in one embodiment of the present invention.

[0054] Figure 7 shows a configuration in which the heater unit 400 is embedded in the second metal plate 200 such that the second ceramic molded body 420-2 is located on the side of the first metal plate 100. However, in this embodiment, as shown in Figure 7, a configuration in which the heater unit 400 is embedded in the second metal plate 200 such that the first ceramic molded body 420-1 is located on the side of the first metal plate 100 can also be applied.

[0055] As described above, the heater unit 400 includes a resistance heating element 410 capable of forming complex pattern shapes, and ceramic members 420 (a first ceramic molded body 420-1 and a second ceramic molded body 420-2) manufactured to match the pattern shape of the resistance heating element 410. The heater unit 400 can be designed while considering the uniformity of the temperature distribution of the substrate placed on the stage 10, and offers a high degree of design freedom. Furthermore, the stage 10 equipped with the heater unit 400 can improve the uniformity of the temperature distribution of the substrate.

[0056] <Modification 1 of the First Embodiment> A modification of this embodiment will be described with reference to Figure 8. In the following, the description of the configuration is omitted if it is the same as that of the stage 10 or the heater unit 400.

[0057] Figure 8 is a schematic cross-sectional view showing the configuration of stage 10A in one embodiment of the present invention.

[0058] In the stage 10A shown in Figure 8, a groove 110A is provided in the first metal plate 100. The heater unit 400 is placed in the groove 110A, and the groove 110A is closed by the second metal plate 200. In other words, in stage 10A, the heater unit 400 is embedded in the first metal plate 100.

[0059] According to this modified example, since the heater unit 400 is embedded within the first metal plate 100 on which the substrate is placed, heat conduction from the heater unit 400 to the first metal plate 100 can be improved.

[0060] <Modification 2 of the First Embodiment> Another modification of this embodiment will be described with reference to Figure 9. In the following, the description of the configuration is sometimes omitted for configurations similar to that of the stage 10 or the heater unit 400.

[0061] Figure 9 is a schematic cross-sectional view showing the configuration of stage 10B in one embodiment of the present invention.

[0062] In the stage 10B shown in Figure 9, a groove 110B is provided in the first metal plate 100, and a groove 210B is provided in the second metal plate 200. The first metal plate 100 and the second metal plate 200 are joined together such that grooves 110B and 210B are connected to form a space. The heater unit 400 is placed in the space formed by grooves 110B and 210B. In other words, in stage 10B, the heater unit 400 is embedded not only in the first metal plate 100 but also in the second metal plate 200.

[0063] In this modified configuration, since the heater unit 400 is embedded in the first metal plate 100 on which the substrate is placed, heat conduction from the heater unit 400 to the first metal plate 100 can be improved. Although not shown in the figures, in this modified configuration, the width of the groove 110B is approximately the same as the width of the heater unit 400, and the width of the groove 210B can be made larger than the width of the heater unit 400. This allows a gap to be formed within the groove 210B in which the heater unit 400 does not come into contact with the second metal plate 200. Since the gap functions as a heat insulating area with low thermal conductivity, heat conduction from the heater unit 400 to the second metal plate 200 can be suppressed.

[0064] <Modification 3 of the First Embodiment> Another modification of this embodiment will be described with reference to Figure 10. In the following, the description of the configuration may be omitted if it is the same as that of the stage 10 or the heater unit 400.

[0065] Figure 10 is a schematic cross-sectional view showing the configuration of the heater unit 400C in one embodiment of the present invention.

[0066] As shown in Figure 10, the heater unit 400C includes a resistance heating element 410 and a ceramic member 420C. The ceramic member 420C includes a first ceramic molded body 420C-1 and a second ceramic molded body 420C-2.

[0067] In cross-sectional view, the width of the second ceramic molded body 420C-2 is greater than the width of the first ceramic molded body 420C-1. The second ceramic molded body 420C-2 covers not only the top surface of the first ceramic molded body 420C-1 but also its sides.

[0068] According to this modified example, the second ceramic molded body 420C-2 can be positioned so as to cover the first ceramic molded body 420D-1. This makes it easier to align the first ceramic molded body 420C-1 and the second ceramic molded body 420C-2, thereby improving the dimensional accuracy of the heater unit 400C.

[0069] <Modification 4 of the First Embodiment> Another modification of this embodiment will be described with reference to Figure 11. In the following, the description of the configuration may be omitted if it is the same as that of the stage 10 or the heater unit 400.

[0070] Figure 11 is a schematic exploded view showing the configuration of the heater unit 400D in one embodiment of the present invention.

[0071] As shown in Figure 11, the heater unit 400D includes a resistance heating element 410 and a ceramic member 420D. The ceramic member 420D includes a first ceramic molded body 420D-1 and a second ceramic molded body 420D-2.

[0072] In the heater unit 400D, the first ceramic molded body 420D-1 and the second ceramic molded body 420D-2 are provided with a first fitting portion 422D-1 and a second fitting portion 422D-2, respectively. The first fitting portion 422D-1 and the second fitting portion 422D-2 can be fitted together. For example, the first fitting portion 422D-1 has a convex shape, and the second fitting portion 422D-2 has a concave shape that can be fitted to the convex shape. Each of the first fitting portion 422D-1 and the second fitting portion 422D-2 may be provided so as to extend along the extending direction of the resistance heating element 410, or may be provided partially along the extending direction of the resistance heating element 410. Note that the shapes of the first fitting portion 422D-1 and the second fitting portion 422D-2 may be the opposite of the shapes shown in Figure 11. In other words, the first fitting portion 422D-1 may have a concave shape, and the second fitting portion 422D-2 may have a convex shape.

[0073] According to this modified example, when the second ceramic molded body 420D-2 is placed on the first ceramic molded body 420D-1, the second fitting portion 422D-2 is fitted with the first fitting portion 422D-1. Therefore, alignment of the first ceramic molded body 420D-1 and the second ceramic molded body 420D-2 becomes easier, and the dimensional accuracy of the heater unit 400D can be improved.

[0074] <Modification 5 of the First Embodiment> Another modification of this embodiment will be described with reference to Figure 12. In the following, the description of the configuration may be omitted if it is the same as that of the stage 10 or the heater unit 400.

[0075] Figure 12 is a schematic exploded view showing the configuration of the heater unit 400E in one embodiment of the present invention.

[0076] As shown in Figure 12, the heater unit 400E includes a resistance heating element 410 and a ceramic member 420E. The ceramic member 420D includes a first ceramic molded body 420E-1 and a second ceramic molded body 420E-2.

[0077] In the heater unit 400E, when the resistance heating element 410 is located within the ceramic member 420E, the first ceramic molded body 420E-1 and the second ceramic molded body 420E-2 each cover the side surface of the resistance heating element 410. Specifically, the outer side surface portion 423E-1 of the first ceramic molded body 420E-1 has a tapered shape, and the inner side surface portion 423E-2 of the second ceramic molded body 420E-2 has a tapered shape. The angle of the tapered shape of the inner side surface portion 423E-2 is approximately the same as the angle of the tapered shape of the outer side surface portion 423E-1. Therefore, when the second ceramic molded body 420E-2 is placed on the first ceramic molded body 420E-1, the inner side surface portion 423E-2 is fitted with the outer side surface portion 423E-1. In other words, the outer side portion 423E-1 and the inner side portion 423E-2 can function as fitting portions.

[0078] According to this modified example, when the second ceramic molded body 420E-2 is placed on the first ceramic molded body 420E-1, the inner side surface portion 423E-2 of the second ceramic molded body 420E-2 is fitted with the outer side surface portion 423E-1 of the first ceramic molded body 420E-1. As a result, alignment of the first ceramic molded body 420E-1 and the second ceramic molded body 420E-2 becomes easier, and the dimensional accuracy of the heater unit 400E can be improved.

[0079] <Second Embodiment> Referring to Figure 13, a stage 10F according to one embodiment of the present invention will be described. In the following description, the explanation of the configuration is sometimes omitted if it is the same as that of the stage 10 or the heater unit 400.

[0080] Figure 13 is a schematic cross-sectional view showing the configuration of stage 10F in one embodiment of the present invention. Note that only a part of stage 10F is shown in Figure 13, and for example, the shaft 300 is not shown.

[0081] As shown in Figure 13, the stage 10F includes a first metal plate 100, a second metal plate 200F, and a heater unit 400. The heater unit 400 is located in a recess 230F of the second metal plate 200F.

[0082] The second metal plate 200F is provided with a recess 230F that is sized to correspond to the outer shape of the heater unit 400, regardless of the predetermined pattern shape of the heater unit 400. The heater unit 400 is placed within the recess 230F of the second metal plate 200F and covered by the first metal plate 100. When the first metal plate 100 is placed on the second metal plate 200, the recess 230F is closed by the first metal plate 100, forming a hollow space. Therefore, it can also be said that the heater unit 400 is placed within the space formed by the first metal plate 100 and the recess 230F of the second metal plate 200F.

[0083] In stage 10F, an insulator 430F is filled into the gaps of the heater unit 400 embedded in the second metal plate 200F. The insulator 430F may be filled to fill all of the gaps of the heater unit 400, or to fill only a portion of them. By filling the gaps of the heater unit 400 with the insulator 430F, heat can be conducted to the first metal plate 100 and the second metal plate 200F via the insulator 430F.

[0084] As the insulator 430F, for example, magnesium oxide, aluminum oxide, silicon oxide, zirconium oxide, tantalum oxide, boron nitride, aluminum nitride, silicon nitride, zirconium nitride, titanium nitride, tantalum nitride, molybdenum nitride, or niobium nitride can be used. The insulator 430F can be filled in the form of a powder, or an aggregate of fine particles obtained by sintering and grinding the powder.

[0085] According to this embodiment, the second metal plate 200F does not need to be manufactured to match a predetermined pattern shape of the heater unit 400. In other words, the second metal plate 200F can be designed without requiring high dimensional accuracy. Therefore, the manufacturing yield of the stage 10F is improved, and the manufacturing cost of the stage 10F can be reduced. Furthermore, since heat is conducted to the first metal plate 100 and the second metal plate 200F via the insulator 430F, the heat conduction from the heater unit 400 to the first metal plate 100 can be controlled by adjusting the type and position of the insulator 430F. Therefore, in the stage 10F, the surface temperature of the first metal plate 100 can be finely adjusted to improve the temperature distribution of the substrate placed on the first metal plate 100.

[0086] <Third Embodiment> Referring to Figure 14, a stage 10G and a heater unit 400G according to one embodiment of the present invention will be described. In the following description, the description of the configuration is omitted if it is the same as that of the stage 10 and stage 10F or the heater unit 400.

[0087] Figure 14 is a schematic cross-sectional view showing the configuration of stage 10G in one embodiment of the present invention. Note that only a part of stage 10G is shown in Figure 14, and for example, the shaft 300 is not shown.

[0088] As shown in Figure 14, the stage 10G includes a first metal plate 100, a second metal plate 200F, and a heater unit 400G. The heater unit 400G has a flat plate shape (for example, a disc shape) and is positioned in a recess 230F of the second metal plate 200F.

[0089] The heater unit 400G includes a resistance heating element 410 and a ceramic member 420G. The ceramic member 420G also includes a first ceramic molded body 420G-1 and a second ceramic molded body 420G-2. The first ceramic molded body 420G-1 is provided with a groove 421G-1 that corresponds to a predetermined pattern shape of the resistance heating element 410. The resistance heating element 410 is positioned in the groove 421G-1 of the first ceramic molded body 420G-1 so as to fit into the groove 421G-1, and is covered by the second ceramic molded body 420G-2. In other words, the resistance heating element 410 is surrounded by the ceramic member 420G.

[0090] The heater unit 400G has a flat plate shape in which the resistive heating element 410 is embedded in the ceramic member 420G. Even if the heater unit 400G is not placed in the recess 230F of the second metal plate 200F, the ceramic member is present between two adjacent pattern regions of the resistive heating element 410 and is separated by the ceramic member 420.

[0091] According to this embodiment, the heater unit 400G has a flat plate shape corresponding to the recess 230F of the second metal plate 200, making it easy to place on the second metal plate 200. Therefore, the stage 10G is easy to manufacture, and the manufacturing cost of the stage 10G can be reduced.

[0092] <Fourth Embodiment> Referring to Figure 15, an etching apparatus 50 according to one embodiment of the present invention will be described. The etching apparatus 50 includes a stage 10. Therefore, in the following description, the same or similar configurations as those of the stage 10 described in the first embodiment may be omitted.

[0093] Figure 15 is a schematic cross-sectional view showing the configuration of an etching apparatus 50 according to one embodiment of the present invention.

[0094] The etching apparatus 50 is capable of performing dry etching on various films. The etching apparatus 50 includes a chamber 502. The chamber 502 provides a space for etching a film such as a conductor, an insulator, or a semiconductor formed on a substrate.

[0095] An exhaust device 504 is connected to the chamber 502, whereby the inside of the chamber 502 can be set to a reduced-pressure atmosphere. The chamber 502 is further provided with an introduction pipe 506 for introducing a reaction gas, and the etching reaction gas is introduced into the chamber 502 via a valve 508. As the reaction gas, for example, carbon tetrafluoride (CF ４ ), octafluorocyclobutane (c-C ４ F ８ ), decafluorocyclopentane (c-C ５ F １０ ), or hexafluorobutadiene (C ４ F ６ ), and other fluorine-containing organic compounds can be used.

[0096] A microwave source 512 can be provided at the upper part of the chamber 502 via a waveguide 510. The microwave source 512 has an antenna or the like for supplying microwaves, and outputs high-frequency microwaves such as 2.45 GHz microwaves or 13.56 MHz radio frequency (RF) waves, for example. Microwaves generated by the microwave source 512 propagate to the upper part of the chamber 502 through the waveguide 510, and are introduced into the chamber 502 through a window 514 made of quartz, ceramic, or the like. The reaction gas is turned into plasma by the microwaves, and etching of the film proceeds by electrons, ions, or radicals contained in the plasma.

[0097] A stage 10 for placing a substrate is provided at the bottom of the chamber 502. A power supply 524 is connected to the stage 10, and high-frequency power is supplied to the stage 10, forming a microwave electric field perpendicular to the surface of the stage 10 and the substrate surface. Magnets 516, 518, and 520 can be provided on the top and sides of the chamber 502. Magnets 516, 518, and 520 may be permanent magnets or electromagnets with electromagnetic coils. Magnets 516, 518, and 520 generate a magnetic field parallel to the stage 10 and the substrate surface. Through the cooperation of the magnetic field and the microwave electric field, electrons in the plasma resonate under the Lorentz force and are bound to the stage 10 and the substrate surface. As a result, a high-density plasma can be generated on the substrate surface.

[0098] The stage 10 is further connected to a heater power supply 530 that controls the temperature of a heater unit 400 provided on the stage 10. The stage 10 may also be further connected to a power supply 526 for an electrostatic chuck for fixing a substrate to the stage 10, a temperature controller 528 for controlling the temperature of a medium circulating inside the stage 10, and a rotation control device (not shown) for rotating the stage 10.

[0099] <Fifth Embodiment> Referring to Figure 16, a CVD apparatus 60 according to one embodiment of the present invention will be described. The CVD apparatus 60 includes a stage 10. Therefore, in the following description, the same or similar configurations as those of the stage 10 described in the first embodiment may be omitted.

[0100] Figure 16 is a schematic cross-sectional view showing the configuration of a CVD apparatus 60 according to one embodiment of the present invention.

[0101] The CVD apparatus 60 has a chamber 602. The chamber 602 provides a space for chemically reacting reaction gases and chemically forming various films on a substrate.

[0102] An exhaust device 604 is connected to the chamber 602 to reduce the pressure inside the chamber 602. The chamber 602 is further provided with an introduction pipe 606 for introducing reaction gas, and the reaction gas for film formation is introduced into the chamber 602 via a valve 608. Various gases can be used as the reaction gas, depending on the film to be made. The gas may be a liquid at room temperature. For example, thin films of silicon, silicon oxide, or silicon nitride can be formed by using silane, dichlorosilane, or tetraethoxysilane. Also, thin metal films of tungsten or aluminum can be formed by using tungsten fluoride or trimethylaluminum.

[0103] Similar to the etching apparatus 50, a microwave source 612 may be provided at the top of the chamber 602 via a waveguide 610. Microwaves generated by the microwave source 612 are introduced into the chamber 602 via the waveguide 610. The reaction gas is converted into plasma by the microwaves, and the chemical reaction of the gas is promoted by various active species contained in the plasma. The products obtained from the chemical reaction are deposited on the substrate, forming a thin film. As an optional configuration, a magnet 644 can be provided inside the chamber 602 to increase the density of the plasma. A stage 10 is provided at the bottom of the chamber 602, and the thin film can be deposited with the substrate placed on the stage 10. Similar to the etching apparatus 50, magnets 616 and 618 may be further provided on the sides of the chamber 602.

[0104] Stage 10 is further connected to a heater power supply 630 that controls the temperature of a heater unit 400 provided on Stage 10. Stage 10 may also be further connected to a power supply 624 for supplying high-frequency power to Stage 10, a power supply 626 for an electrostatic chuck, a temperature controller 628 for controlling the temperature of a cooling medium circulating inside Stage 10, and a rotation control device (not shown) for rotating Stage 10.

[0105] <Sixth Embodiment> Referring to Figure 17, a sputtering apparatus 70 according to one embodiment of the present invention will be described. The sputtering apparatus 70 includes a stage 10. Therefore, in the following description, the same or similar configurations as those of the stage 10 described in the first embodiment may be omitted.

[0106] Figure 17 is a schematic cross-sectional view showing the configuration of a sputtering apparatus 70 according to one embodiment of the present invention.

[0107] The sputtering apparatus 70 has a chamber 702. The chamber 702 provides a field for collisions between high-speed ions and the target, and for depositing the target atoms generated at that time onto the substrate.

[0108] Chamber 702 is connected to an exhaust device 704 for reducing the pressure inside Chamber 702. Chamber 702 is also provided with an inlet pipe 706 and a valve 708 for introducing sputtering gas such as argon into Chamber 702.

[0109] A target stage 710 is provided at the bottom of the chamber 702, which holds a target containing the material to be deposited and also functions as a cathode, and a target 712 is placed on top of it. A high-frequency power supply 714 is connected to the target stage 710, and the high-frequency power supply 714 can generate plasma inside the chamber 702.

[0110] A stage 10 can be provided at the top of the chamber 702. In this case, the thin film is formed with the substrate placed below the stage 10. Similar to the etching apparatus 50 and the CVD apparatus 60, a heater power supply 730 is connected to the stage 10. The stage 10 may also be connected to a power supply 724 for supplying high-frequency power to the stage 10, a power supply 726 for the electrostatic chuck, a temperature controller 728, and a rotation control device (not shown) for rotating the stage 10.

[0111] Argon ions accelerated by the plasma generated in chamber 702 collide with target 712, ejecting atoms from target 712. While shutter 716 is open, the ejected atoms fly onto a substrate placed beneath stage 10 and deposit there.

[0112] Figure 17 illustrates a configuration in which the stage 10 is installed at the top of the chamber 702 and the target stage 710 is installed at the bottom of the chamber 702. However, the configuration of the sputtering apparatus 70 is not limited to this, and a configuration in which the target 712 is located above the stage 10 is also possible. Alternatively, the stage 10 may be installed so that the main surface of the substrate is positioned perpendicular to the horizontal plane, and the target stage 710 may be provided opposite it.

[0113] <Seventh Embodiment> Referring to Figure 18, an evaporation apparatus 80 according to one embodiment of the present invention will be described. The evaporation apparatus 80 includes a stage 10. Therefore, in the following description, the same or similar configurations as those of the stage 10 described in the first embodiment may be omitted.

[0114] Figure 18 is a schematic cross-sectional view showing the configuration of a vapor deposition apparatus 80 according to one embodiment of the present invention.

[0115] The deposition apparatus 80 has a chamber 802. The chamber 802 provides a space for evaporating the material in the deposition source 810 and for depositing the evaporated material onto the substrate.

[0116] Chamber 802 is connected to an exhaust device 504 for creating a high vacuum inside the chamber 802. Chamber 802 is provided with an inlet pipe 806 for returning the chamber 802 to atmospheric pressure, and an inert gas such as nitrogen or argon is introduced into the chamber 802 via a valve 808.

[0117] A stage 10 can be provided at the top of the chamber 802. Material deposition proceeds with the substrate placed below the stage 10. Similar to the etching apparatus 50, CVD apparatus 60, and sputtering apparatus 70, a heater power supply 828 is further connected to the stage 10. The stage 10 may also be optionally connected to a power supply 824 for an electrostatic chuck, a temperature controller 826, and a rotation control device 830 for rotating the stage 10. The stage 10 may further have a mask holder 816 for fixing a metal mask between the substrate and the deposition source 810. This allows the metal mask to be positioned near the substrate such that its openings overlap the area where the material is deposited.

[0118] A deposition source 810 is provided below the chamber 802, and the material to be deposited is filled into the deposition source 810. The deposition source 810 is equipped with a heater for heating the material, and the heater is controlled by a control device 812. The chamber 802 is made into a high vacuum using an exhaust device 804, and the deposition is started by heating the deposition source 810 to vaporize the material. When the deposition rate becomes constant, the shutter 814 is opened, and the deposition of the material on the substrate begins.

[0119] <Eighth Embodiment> Referring to Figure 19, an ALD device 90 according to one embodiment of the present invention will be described. The ALD device 90 includes a stage 10. Therefore, in the following description, the description of the same or similar configuration as the configuration of the stage 10 described in the first embodiment may be omitted.

[0120] Figure 19 is a schematic cross-sectional view showing the configuration of an ALD device 90 according to one embodiment of the present invention.

[0121] The ALD apparatus 90 has a chamber 902. The chamber 902 provides a space for introducing precursors, which are the raw materials for the membrane.

[0122] An exhaust device 904 is connected to the chamber 902 to reduce the pressure inside the chamber 902 and to exhaust unwanted gases. A shower head 906 is installed inside the chamber 902, facing the stage 10. The shower head 906 has multiple openings on the side facing the stage 10. An introduction pipe 908 for introducing the precursor is connected to the shower head 906. A heater power supply 910 for controlling the temperature of the heater unit 400 is connected to the stage 10.

[0123] The precursor is a carrier gas (e.g., Ar or N). ２ When introduced into the introduction tube 908 along with other materials, the precursors pass through the openings of the shower head 906 and adhere (physically adsorb) to the substrate placed on the stage 10. The precursors on the substrate are decomposed by the heat of the stage 10, and an atomic layer is formed. Subsequently, the decomposed precursor products and unreacted precursors are exhausted by the exhaust device 904. In the ALD apparatus 90, by repeatedly introducing and exhausting precursors, a film of a predetermined thickness can be formed on the substrate while depositing an atomic layer in a controlled manner. By using multiple precursors, a compound film can also be formed.

[0124] The precursor is, for example, trimethylaluminum (TMA), but is not limited to this.

[0125] Stage 10 may also be connected to a rotation control device (not shown) for rotating the stage 10, as an optional configuration.

[0126] As described above in the fourth to eighth embodiments, the etching apparatus 50, CVD apparatus 60, sputtering apparatus 70, deposition apparatus 80, and ALD apparatus 90 utilize the stage 10. By using the stage 10, the temperature distribution of the substrate placed on the stage 10 can be made uniform.

[0127] The embodiments described above as embodiments of the present invention can be combined and implemented as appropriate, insofar as they do not contradict each other. Furthermore, any additions, deletions, or design modifications made by those skilled in the art based on these embodiments are also included within the scope of the present invention, as long as they retain the essence of the present invention.

[0128] Furthermore, any effects or benefits other than those brought about by the embodiments described above, if they are clear from the description herein or easily predictable to those skilled in the art, are naturally understood to be brought about by the present invention.

[0129] 10, 10A, 10B, 10F, 10G, 10H, 10I, 10J: Stage, 50: Etching apparatus, 60: CVD apparatus, 70: Sputtering apparatus, 80: Evaporation apparatus, 90: ALD apparatus, 100: First metal plate, 110A, 110B: Grooves, 200, 200F: Second metal plate, 210, 210B, 210F: Grooves, 230F: Recess, 300: Shaft, 400, 400C, 400D, 400E, 400H, 400I, 400J: Heater unit, 400-1: First pattern area, 400-2: Second pattern area, 410: Resistive heating element 420, 420C, 420D, 420E, 420G: Ceramic component, 420-1, 420C-1, 420D-1, 420E-1, 420F-1: First ceramic molded body, 420-2, 420C-2, 420D-2, 420E-2, 420G-2: Second ceramic molded body, 421-1, 421G-1: Groove, 422D-1: First fitting part, 422D-2: Second fitting part, 423E-1: Outer side part, 423E-2: Inner side part, 430F: Insulator, 502: Chamber, 504: Exhaust device, 506: Inlet tube, 508: Valve, 510: Waveguide, 512: Microwave source, 514: Window, 516: Magnet, 518: Magnet, 520: Magnet, 524: Power supply, 526: Power supply, 528: Temperature controller, 530: Heater power supply, 602: Chamber, 604: Exhaust system, 606: Inlet tube, 608: Valve, 610: Waveguide, 612: Microwave source, 616: Magnet, 618: Magnet, 624: Power supply, 626: Power supply, 628: Temperature controller, 630: Heater power supply, 644: Magnet, 702: Chamber, 704: Exhaust system, 706: Inlet tube, 708: Valve, 710: Target stage, 712: Target, 714: High-frequency power supply, 716: Shutter, 724: Power supply, 726: Power supply, 728: Temperature controller, 730: Heater power supply, 802: Chamber, 804: Exhaust system, 806: Inlet tube, 808: Valve, 810: Evaporation source, 812: Control device, 814: Shutter, 816: Mask holder, 824: Power supply, 826: Temperature controller, 828: Heater power supply, 830: Rotation control device, 902: Chamber,904: Exhaust system, 906: Shower head, 908: Inlet pipe, 910: Heater power supply,

Claims

1. A heater unit comprising: a resistance heating element; a first ceramic molded body including a groove in which the resistance heating element is disposed; and a second ceramic molded body covering the resistance heating element disposed in the groove.

2. The heater unit according to claim 1, wherein the resistive heating element has a flat plate shape.

3. The heater unit according to claim 1, wherein the material of the second ceramic molded body is different from the material of the first ceramic molded body.

4. The heater unit according to claim 1, wherein the thickness of the second ceramic molded body is different from the thickness of the first ceramic molded body.

5. The heater unit according to claim 1, wherein the first ceramic molded body includes a first fitting portion, and the second ceramic molded body includes a second fitting portion that fits with the first fitting portion.

6. The heater unit according to claim 1, wherein the first ceramic molded body and the second ceramic molded body are bonded together by an adhesive.

7. The heater unit according to claim 1, wherein, in a cross-sectional view, the width of the second ceramic molded body is greater than the width of the first ceramic molded body.

8. A stage comprising: a first metal plate; a second metal plate joined to the first metal plate; and a resistance heating element surrounded by a ceramic member, embedded between the first metal plate and the second metal plate, in at least one of the first metal plate and the second metal plate.

9. The stage according to claim 8, wherein the resistive heating element has a flat plate shape.

10. The stage according to claim 8, wherein the ceramic member is in contact with the first metal plate and the second metal plate.

11. The stage according to claim 8, wherein the ceramic member comprises a first ceramic molded body including a groove in which the resistance heating element is disposed, and a second ceramic molded body covering the resistance heating element disposed in the groove.

12. The stage according to claim 11, wherein the material of the second ceramic molded body is different from the material of the first ceramic molded body.

13. The stage according to claim 11, wherein the thickness of the second ceramic molded body is different from that of the first ceramic molded body.

14. The stage according to claim 11, wherein the first ceramic molded body includes a first fitting portion, and the second ceramic molded body includes a second fitting portion that fits with the first fitting portion.

15. The stage according to claim 11, wherein the first ceramic molded body and the second ceramic molded body are bonded together by an adhesive.

16. The stage according to claim 11, wherein, in plan view, the second ceramic molded body is larger than the first ceramic molded body.

17. The stage according to claim 8, wherein the resistance heating element has a pattern shape including a first heating region and a second heating region extending from the first heating region and adjacent to the first heating region at a distance from it, and a gap is provided between the first heating region and the second heating region in which the first metal plate and the second metal plate are not joined, and the ceramic member is filled in the gap.

18. The stage according to claim 17, wherein the gap is filled with an insulator different from the ceramic member.

19. The stage according to claim 8, wherein the first metal plate and the second metal plate are joined by diffusion bonding.

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