Composition, cured film, and display device

WO2026204413A1PCT designated stage Publication Date: 2026-10-01SUMITOMO CHEM CO LTD
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
PCT/JP2026/009592
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2026-02-27
Filing Date
2026-03-12
Publication Date
2026-10-01

Smart Images

  • Figure JPOXMLDOC01-APPB-C000001
    Figure JPOXMLDOC01-APPB-C000001
  • Figure JPOXMLDOC01-APPB-C000002
    Figure JPOXMLDOC01-APPB-C000002
  • Figure JPOXMLDOC01-APPB-C000003
    Figure JPOXMLDOC01-APPB-C000003
Patent Text Reader

Abstract

The purpose of the present invention is to provide a composition exhibiting good process suitability, a cured film formed from the composition, and a display device including the cured film. The composition contains semiconductor particles (A), a resin (C), and a polymerizable compound (D). The polymerizable compound (D) contains a polymerizable compound (Da) having a functional group exhibiting coordination functionality. The value RDf / A represented by the formula is less than 0.6. RDf / A=RDf / RA (in the formula, RA is the amount (mass) of the semiconductor particles (A) contained in the composition and RDf is the amount (mass) of a polymerizable compound (Df) which is the polymerizable compound (D) not coordinated to the semiconductor particles (A) in the composition)
Need to check novelty before this filing date? Find Prior Art

Description

Composition, cured film, and display device

[0001] The present invention relates to a composition, a cured film formed from the composition, a display device including the cured film, and a method for producing the composition.

[0002] Patent Document 1 describes a curable composition containing semiconductor particles and a polymerizable compound.

[0003] International Publication No. 2024 / 185881

[0004] The present inventors have found that when a patterned cured film is formed using a conventional composition containing semiconductor particles and a polymerizable compound, even though the composition after exposure has sufficient curability in the development step, the development speed becomes excessively fast, and thus control of the development time (hereinafter also referred to as "process suitability") may not be sufficient. Accordingly, an object of the present invention is to provide a composition exhibiting good process suitability, a cured film formed from the composition, and a display device including the cured film.

[0005] The gist of the present invention is as follows. [1] A composition comprising semiconductor particles (A), a resin (C), and a polymerizable compound (D), wherein the polymerizable compound (D) contains a polymerizable compound (Da) having a functional group exhibiting coordinating ability, and the value R represented by the following formula Df / A is less than 0.6. R Df / A =R Df / R A (wherein R A represents the content (mass) of the semiconductor particles (A) in the composition, and R Df represents the content (mass) of the polymerizable compound (Df), which is a polymerizable compound (D) not coordinated to the semiconductor particles (A) in the composition) [2] The composition according to [1], wherein the value R Df / A is 0.10 or more. [3] The composition according to [1] or [2], wherein the value R Df / A is 0.40 or less. [4] The value R Df / A[1] to [3] any one of the compositions, wherein the acid value of the resin (C) is 0.20 or less. [5] The composition according to any one of the compositions, wherein the acid value of the resin (C) is less than 120 mg KOH / g. [6] The composition according to any one of the compositions, wherein the double bond equivalent of the resin (C) is less than 500 g / eq. [7] A method for producing a composition comprising semiconductor particles (A), a resin (C), and a polymerizable compound (D), wherein the polymerizable compound (D) contains a polymerizable compound (Da) having a functional group exhibiting coordinating ability, and the mixing of the semiconductor particles (A) and the resin (C) is started before or at the start of mixing of the semiconductor particles (A) and the polymerizable compound (Da) having a functional group exhibiting coordinating ability. [8] A cured film formed from the composition according to any one of the compositions, wherein the acid value of the resin (C) is less than 120 mg KOH / g. [9] A display device comprising the cured film according to [8].

[0006] According to the present invention, it is possible to provide a composition with good process suitability, a cured film formed from the composition, and a display device containing the cured film.

[0007] <Composition> The composition according to the present invention (hereinafter also simply referred to as "composition") comprises semiconductor particles (A), a resin (C), and a polymerizable compound (D), wherein the polymerizable compound (D) contains a polymerizable compound (Da) having a functional group exhibiting coordination ability, R Df / A = R Df / R A (R A R is the content (mass) of semiconductor particles (A) in the composition. Df The value R represents the content (mass) of polymerizable compound (Df), which is a polymerizable compound (D) that is not coordinated to semiconductor particles (A) in the composition. Df / A However, it is less than 0.6. Hereinafter, polymerizable compound (Df), which is a polymerizable compound (D) that is not coordinated to semiconductor particles (A), will also be simply referred to as "polymerizable compound (Df)". In this specification, "polymerizable compound (D) that is not coordinated to semiconductor particles (A)" refers to polymerizable compound (D) contained in the supernatant liquid obtained by ultracentrifugation (86,000 rpm, 3 hours) of the composition to remove the semiconductor particles (A). The composition according to the present invention has good process suitability, and preferably a better residual film rate during development.

[0008] In this specification, unless otherwise specified, the compounds exemplified as components may be used individually or in combination of two or more. Furthermore, when using multiple components, the content should be adjusted by the total amount of all components used, unless otherwise specified.

[0009] <Semiconductor Particle (A)> Semiconductor particle (A) is preferably a light-emitting inorganic semiconductor particle that absorbs primary light and emits light of a different wavelength than the primary light. The light-emitting inorganic semiconductor particle is more preferably one that absorbs primary light and emits green or red light, and even more preferably one that converts the wavelength of blue light, which is the primary light, to the wavelength of red light or the wavelength of green light.

[0010] In this specification, "blue" refers to all light that is perceived as blue (all light with intensity in the blue wavelength range, for example, 380 nm to 495 nm), and is not limited to light of a single wavelength. "Green" refers to all light that is perceived as green (all light with intensity in the green wavelength range, for example, 495 nm to 585 nm), and is not limited to light of a single wavelength. "Red" refers to all light that is perceived as red (all light with intensity in the red wavelength range, for example, 585 nm to 780 nm), and is not limited to light of a single wavelength.

[0011] Examples of semiconductor particles (A) include quantum dots and particles composed of compounds having a perovskite crystal structure (hereinafter also referred to as "perovskite compounds"), with quantum dots being preferred. Examples of perovskite compounds include the compounds described in International Publication No. 2024 / 185881. Quantum dots are luminescent semiconductor nanoparticles with a particle size of 1 nm to 100 nm (preferably 1 nm to 50 nm, more preferably 1 nm to 30 nm), which utilize the band gap of the semiconductor to absorb ultraviolet light or visible light (e.g., blue light) and emit light.

[0012] Examples of quantum dots include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdHgTe, CdSeS, CdSeTe, CdSte, ZnSeS, ZnSeTe, ZnSte, HgSeS, HgSeTe, HgSte, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSte, CdHgSeS, CdHgSte, CdHgSte, HgZnSeS, HgZn Examples include compounds of group 12 elements and group 16 elements such as SeTe and HgZnSte; compounds of group 13 elements and group 15 elements such as GaN, GaP, GaAs, AlN, AlP, AlAs, InN, InP, InAs, GaNP, GaNAs, GaPAs, AlNP, AlNAs, AlPAs, InNP, InNAs, InPAs, GaAlNP, GaAlNAs, GaAlPAs, GaInNP, GaInNAs, GaInPAs, InAlNP, InAlNAs, InAlPAs; and compounds of group 16 elements such as PdS and PbSe.

[0013] If the quantum dots contain sulfur (S) or senium (Se), quantum dots that have been surface-modified with metal oxides or organic materials may be used. By using surface-modified quantum dots, it is possible to prevent the extraction of S or Se by reactive components contained in or that may be contained in the composition.

[0014] Furthermore, the quantum dots may form a core-shell structure by combining the above-mentioned compounds. Examples of such combinations include nanoparticles in which the core is CdSe and the shell is ZnS, and nanoparticles in which the core is InP and the shell is ZnSeS. The shape of the quantum dots is not particularly limited and may be spherical, nearly spherical, rod-shaped, disc-shaped, etc.

[0015] Since the energy state of a quantum dot depends on its size, the emission wavelength can be freely selected by changing the particle size. Furthermore, because the light emitted from quantum dots has a narrow spectral width, it is advantageous for widening the color gamut of display devices. In addition, quantum dots have high responsiveness, which is advantageous in terms of primary light utilization efficiency.

[0016] The composition contains at least one semiconductor particle (A), and may contain two or more. For example, the composition may contain only a semiconductor particle (A) that emits light of a specific wavelength, or it may further contain two or more semiconductor particles (A) that emit light of wavelengths different from the specific wavelength.

[0017] The content of semiconductor particles (A) in the composition is preferably 5% to 70% by mass, more preferably 10% to 65% by mass, even more preferably 15% to 60% by mass, even more preferably 20% to 55% by mass, and even more preferably 25% to 50% by mass, relative to the total amount of solids in the composition. When the content of semiconductor particles (A) is within the above range, it becomes easier to adjust the content of the resin (C) described later, and the process suitability of the composition and / or the residual film rate of the cured film can be improved.

[0018] In this specification, the total amount of solids in a composition means the sum of the components contained in the composition, excluding the solvent (J). The content of each component in the solids of a composition can be measured by known analytical means such as liquid chromatography or gas chromatography. The content of each component in the solids of a composition may be calculated from the amount blended during composition preparation.

[0019] <Organic Ligand (G)> The composition may contain an organic ligand (G) that coordinates to the semiconductor particles (A). The organic ligand (G) is, for example, an organic compound having a polar group that exhibits coordinating ability to the semiconductor particles (A). However, the organic ligand (G) is a compound that cannot be polymerized by active radicals, acids, etc., such as those generated from the polymerization initiator (E) described later. For example, it is preferable that the organic ligand (G) does not have an ethylenically unsaturated bond in its molecule. It is preferable that the semiconductor particles (A) exist in the composition with the organic ligand (G) coordinated to them. The semiconductor particles (A) with the organic ligand (G) coordinated to them will also be referred to as coordination-type semiconductor particles (AG) below. The organic ligand (G) can, for example, coordinate to the surface of the semiconductor particles (A). The organic ligand (G) usually coordinates to the semiconductor particles (A) via the polar group. The composition may contain one or more types of organic ligands (G).

[0020] Preferably, at least some of the molecules of the organic ligand (G) are coordinated to the semiconductor particles (A), and all or almost all of the molecules may be coordinated to the semiconductor particles (A). Including organic ligands (G) coordinated to the semiconductor particles (A) can be advantageous in terms of the stability and dispersibility of the semiconductor particles (A), as well as improving the luminescence intensity when the cured film is used as a wavelength conversion layer. The coordination of organic ligands (G) to semiconductor particles (A) can be confirmed by the uniform dispersion of semiconductor particles (A) in a dispersion medium suitable for organic ligands (G).

[0021] The polar group of the organic ligand (G) is, for example, at least one group selected from the group consisting of a thiol group (-SH), a carboxyl group (-COOH), and an amino group (-NH2). The polar group selected from this group may be advantageous in enhancing the coordination to the semiconductor particles (A). High coordination can contribute to improved stability and dispersibility of the semiconductor particles (A) in the composition, as well as improved luminescence intensity when the cured film is used as a wavelength conversion layer. Among these, it is more preferable that the polar group is at least one group selected from the group consisting of a thiol group and a carboxyl group. The organic ligand (G) may have one or more polar groups.

[0022] The organic ligand (G) is, for example, given by the following formula (x): X A -R X Examples of organic compounds represented by (x) are given. In the formula, X A R is the polar group described above, X This is a monovalent hydrocarbon group which may contain heteroatoms (such as N, O, S, halogen atoms, etc.). The hydrocarbon group may have one or more unsaturated bonds such as carbon-carbon double bonds (however, it is preferable that it does not have ethylenically unsaturated bonds). The hydrocarbon group may have a linear, branched, or cyclic structure. The number of carbon atoms in the hydrocarbon group is, for example, 1 to 40, and may be 1 to 30. The methylene group contained in the hydrocarbon group may be substituted with -O-, -S-, -C(=O)-, -C(=O)-O-, -O-C(=O)-, -C(=O)-NH-, -NH-, etc.

[0023] group R X It may contain a polar group. A specific example of the polar group is polar group X. A The above examples relating to this are cited.

[0024] polar group A Specific examples of organic ligands (G) having a carboxyl group include formic acid, acetic acid, propionic acid, as well as saturated or unsaturated fatty acids. Specific examples of saturated or unsaturated fatty acids include saturated fatty acids such as butyric acid, pentanoic acid, caproic acid, caprylic acid, capric acid, lauric acid, myristic acid, pentadecyl acid, palmitic acid, margaric acid, stearic acid, arachidic acid, behenic acid, and lignoceric acid; monounsaturated fatty acids such as myristoleic acid, palmitoleic acid, oleic acid, eicosenoic acid, erucic acid, and nervonic acid; and polyunsaturated fatty acids such as linoleic acid, alpha-linolenic acid, gamma-linolenic acid, stearic acid, dihomo-gamma-linolenic acid, arachidonic acid, eicosatetraenoic acid, docosadienoic acid, and adrenaline (docosatetraenoic acid).

[0025] polar group A Specific examples of organic ligands having a thiol group or an amino group include the polar group X exemplified above. AExamples include organic ligands (G) in which the carboxyl group of an organic ligand (G) having a carboxyl group is replaced with a thiol group or an amino group.

[0026] In addition to the above, examples of organic ligands (G) represented by formula (x) include compound (G-1) and compound (G-2).

[0027] [Compound (G-1)] Compound (G-1) is a compound having a first functional group and a second functional group. The first functional group is a carboxyl group (-COOH), and the second functional group is a carboxyl group or a thiol group (-SH). Because compound (G-1) has a carboxyl group and / or a thiol group, it can act as a ligand that coordinates to semiconductor particles (A). The composition may contain only one type of compound (G-1) or two or more types.

[0028] Examples of compound (G-1) include the compound represented by the following formula (G-1a). Compound (G-1) may also be the acid anhydride of the compound represented by formula (G-1a).

[0029]

[0030] [In formula (G-1a), R B R represents a divalent hydrocarbon group. B If present, they may be the same or different. The hydrocarbon group may have one or more substituents. If there are multiple substituents, they may be the same or different, and they may be bonded to each other, forming a ring with the atom to which each substituent is bonded. The -CH2- contained in the hydrocarbon group may be replaced by at least one of -O-, -S-, -SO2-, -CO-, and -NH-. p represents an integer from 1 to 10.

[0031] R B Examples of divalent hydrocarbon groups represented by this symbol include chain hydrocarbon groups, alicyclic hydrocarbon groups, aromatic hydrocarbon groups, and groups that combine these.

[0032] Examples of linear hydrocarbon groups include linear or branched alkanediyl groups, which typically have 1 to 50 carbon atoms, preferably 1 to 20, and more preferably 1 to 10. Examples of alicyclic hydrocarbon groups include monocyclic or polycyclic cycloalkanediyl groups, which typically have 3 to 50 carbon atoms, preferably 3 to 20, and more preferably 3 to 10. Examples of aromatic hydrocarbon groups include monocyclic or polycyclic arenediyl groups, which typically have 6 to 20 carbon atoms.

[0033] Examples of substituents that the hydrocarbon group may have include C1-C50 alkyl groups, C3-C50 cycloalkyl groups, C6-C20 aryl groups, carboxyl groups, amino groups, and halogen atoms. Preferably, the substituents that the hydrocarbon group may have are carboxyl groups, amino groups, or halogen atoms.

[0034] When the -CH2- contained in the above hydrocarbon group is replaced by at least one of -O-, -S-, -SO2-, -CO-, and -NH-, it is preferable that it is replaced by at least one of -O-, -CO-, and -NH-, more preferably at least one of -CO- and -NH-, and even more preferably -NH-.

[0035] p is preferably 1 or 2.

[0036] Examples of compounds represented by formula (G-1a) include those represented by the following formulas (1-1) to (1-9).

[0037]

[0038] Specific examples of compounds represented by formula (G-1a), shown by their chemical names, include, for example, mercaptoacetic acid, 2-mercaptopropionic acid, 3-mercaptopropionic acid, 3-mercaptobutanoic acid, 4-mercaptobutanoic acid, mercaptosuccinic acid, mercaptostearic acid, mercaptooctanoic acid, 4-mercaptobenzoic acid, 2,3,5,6-tetrafluoro-4-mercaptobenzoic acid, L-cysteine, N-acetyl-L-cysteine, 3-methoxybutyl 3-mercaptopropionic acid, and 3-mercapto-2-methylpropionic acid. Among these, 3-mercaptopropionic acid and mercaptosuccinic acid are preferred.

[0039] Another example of compound (G-1) is a polycarboxylic acid compound, preferably compound (G-1b) in which the -SH in formula (G-1a) is replaced with a carboxyl group (-COOH).

[0040] Examples of compounds (G-1b) include succinic acid, glutaric acid, adipic acid, octafluoroadipic acid, azelaic acid, dodecanediic acid, tetradecanediic acid, hexadecanedioic acid, heptadecanedioic acid, octadecanediic acid, nonadecanedioic acid, dodecafluorosveric acid, 3-ethyl-3-methylglutaric acid, hexafluoroglutaric acid, trans-3-hexenodioic acid, sebacic acid, hexadecafluorosebacic acid, acetylenedicarboxylic acid, trans-aconitic acid, 1,3-adamantanedicarboxylic acid, bicyclo[2.2.2]octane-1,4- Dicarboxylic acids, cis-4-cyclohexene-1,2-dicarboxylic acid, 1,1-cyclopropanedicarboxylic acid, 1,1-cyclobutanedicarboxylic acid, cis- or trans-1,3-cyclohexanedicarboxylic acid, cis- or trans-1,4-cyclohexanedicarboxylic acid, 1,1-cyclopentanediacetic acid, 1,2,3,4-cyclopentanetetracarboxylic acid, decahydro-1,4-naphthalenedicarboxylic acid, 2,3-norbornanedicarboxylic acid, 5-norbornene-2,3-dicarboxylic acid, phthalic acid, 3-fluorophthalic acid, isophthalic acid, Tetrafluoroisophthalic acid, terephthalic acid, tetrafluoroterephthalic acid, 2,5-dimethylterephthalic acid, 2,6-naphthalenedicarboxylic acid, 2,3-naphthalenedicarboxylic acid, 1,4-naphthalenedicarboxylic acid, 1,1'-ferrocenedicarboxylic acid, 2,2'-biphenyldicarboxylic acid, 4,4'-biphenyldicarboxylic acid, 2,5-franzicarboxylic acid, benzophenone-2,4'-dicarboxylic acid monohydrate, benzophenone-4,4'-dicarboxylic acid, 2,3-pyrazinedicarboxylic acid, 2,3-pyridinedicarboxylic acid, 2,4-pyridinedicarboxylic acid Rubonic acid, 3,5-pyridinedicarboxylic acid, 2,5-pyridinedicarboxylic acid, 2,6-pyridinedicarboxylic acid, 3,4-pyridinedicarboxylic acid, pyrazole-3,5-dicarboxylic acid monohydrate, 4,4'-stilbendicarboxylic acid, anthraquinone-2,3-dicarboxylic acid, 4-(carboxymethyl)benzoic acid, chelidonic acid monohydrate, azobenzene-4,4'-dicarboxylic acid, azobenzene-3,3'-dicarboxylic acid, chlorendic acid, 1H-imidazole-4,5-dicarboxylic acid, 2,2-bis(4-carboxyphenyl)hexafluoropropane, 1,Examples include 10-bis(4-carboxyphenoxy)decane, dipropylmalonic acid, dithiodiglycolic acid, 3,3'-dithiodipropionic acid, 4,4'-dithiodibutanoic acid, 4,4'-dicarboxydiphenyl ether, 4,4'-dicarboxydiphenyl sulfone, ethylene glycol bis(4-carboxyphenyl) ether, 3,4-ethylenedioxythiophene-2,5-dicarboxylic acid, 4,4'-isopropylidenediphenoxyacetic acid, 1,3-acetonedicarboxylic acid, methylenedisalicylic acid, 5,5'-thiodisalicylic acid, tris(2-carboxyethyl) isocyanurate, tetrafluorosuccinic acid, α,α,α',α'-tetramethyl-1,3-benzenedipropionic acid, 1,3,5-benzenetricarboxylic acid, etc.

[0041] The molecular weight of compound (G-1) is preferably 3000 or less, more preferably 2500 or less, even more preferably 2000 or less, even more preferably 1000 or less, even more preferably 800 or less, and even more preferably 500 or less. The molecular weight of compound (G-1) is usually 100 or more.

[0042] The above molecular weight may be either the number-average molecular weight (Mn) or the weight-average molecular weight (Mw). The number-average molecular weight and the weight-average molecular weight are both standard polystyrene equivalent values ​​measured by gel permeation chromatography (GPC).

[0043] When the composition contains compound (G-1), the content ratio of compound (G-1) to semiconductor particles (A) in the composition (compound (G-1) / semiconductor particles (A)) is preferably 0.001 or more and 1 or less by mass ratio, more preferably 0.01 or more and 0.5 or less, even more preferably 0.02 or more and 0.45 or less, even more preferably 0.02 or more and 0.40 or less, and even more preferably 0.02 or more and 0.35 or less.

[0044] If the composition contains compound (G-1), the content of compound (G-1) in the composition is preferably 0.1% to 20% by mass, more preferably 0.2% to 20% by mass, even more preferably 0.2% to 15% by mass, even more preferably 0.5% to 15% by mass, and even more preferably 0.5% to 10% by mass, relative to the total amount of solids in the composition, from the viewpoint of improving the process suitability of the composition and / or the residual film rate during development.

[0045] [Compound (G-2)] Compound (G-2) is a compound different from compound (G-1), containing a polyalkylene glycol structure and having polar groups at its molecular ends. Preferably, the molecular ends are those of the longest carbon chain in compound (G-2) (the carbon atoms in the carbon chain may be replaced by other atoms such as oxygen atoms).

[0046] The composition may contain only one compound (G-2) or two or more compounds (G-2). The composition may contain compound (G-1) or compound (G-2), or compound (G-1) and compound (G-2). Compounds containing a polyalkylene glycol structure and having the above-mentioned first and second functional groups shall belong to compound (G-1).

[0047] The structure of polyalkylene glycol is as follows:

[0048]

[0049] This refers to a structure represented by the formula. In the formula, n is an integer greater than or equal to 2, and R C This is an alkylene group (for example, an ethylene group, a propylene group, etc.).

[0050] Examples of compound (G-2) include polyalkylene glycol compounds represented by the following formula (G-2a).

[0051]

[0052] In formula (G-2a), X is a polar group, Y is a monovalent group, and Z Cis a divalent or trivalent base, n is an integer greater than or equal to 2, m is 1 or 2, R C This is an alkylene group.

[0053] The polar group X is preferably at least one group selected from the group consisting of a thiol group (-SH), a carboxyl group (-COOH), and an amino group (-NH2). The polar group selected from this group may be advantageous in improving coordination to the semiconductor particle (A). In particular, the polar group X is more preferably at least one group selected from the group consisting of a thiol group and a carboxyl group.

[0054] Group Y is a monovalent group. Group Y is not particularly limited and may be a monovalent hydrocarbon group having substituents (N, O, S, halogen atoms, etc.). The -CH2- contained in the hydrocarbon group may be substituted with -O-, -S-, -C(=O)-, -C(=O)-O-, -O-C(=O)-, -C(=O)-NH-, -NH-, etc. The number of carbon atoms in the hydrocarbon group is, for example, 1 to 12. The hydrocarbon group may have unsaturated bonds (however, it is preferable that it does not have ethylenically unsaturated bonds).

[0055] Examples of group Y include alkyl groups having 1 to 12 carbon atoms and having a linear, branched, or cyclic structure; and alkoxy groups having 1 to 12 carbon atoms and having a linear, branched, or cyclic structure. The number of carbon atoms in the alkyl and alkoxy groups is preferably 1 to 8, more preferably 1 to 6, and even more preferably 1 to 4. The -CH2- contained in the alkyl and alkoxy groups may be substituted with -O-, -S-, -C(=O)-, -C(=O)-O-, -O-C(=O)-, -C(=O)-NH-, -NH-, etc. In particular, group Y is preferably a linear or branched alkoxy group having 1 to 4 carbon atoms, and more preferably a linear alkoxy group having 1 to 4 carbon atoms.

[0056] Group Y may contain a polar group. The polar group may be at least one group selected from the group consisting of a thiol group (-SH), a carboxyl group (-COOH), and an amino group (-NH2). However, as described above, compounds containing a polyalkylene glycol structure and having the first and second functional groups are classified as compound (G-1). The polar group is preferably located at the terminal end of group Y.

[0057] Base Z C It is a divalent or trivalent group. Group Z C The hydrocarbon group is not particularly limited and includes, for example, a divalent or trivalent hydrocarbon group which may contain heteroatoms (such as N, O, S, or halogen atoms). The hydrocarbon group preferably has 1 to 24 carbon atoms. The hydrocarbon group may have unsaturated bonds (however, it is preferable that it does not have ethylenically unsaturated bonds).

[0058] divalent group Z C Examples include alkylene groups having a linear, branched, or cyclic structure with 1 to 24 carbon atoms; and alkenylene groups having a linear, branched, or cyclic structure with 1 to 24 carbon atoms. The number of carbon atoms in the alkylene and alkenylene groups is preferably 1 to 12, more preferably 1 to 8, and even more preferably 1 to 4. The -CH2- contained in the alkylene and alkenylene groups may be substituted with -O-, -S-, -C(=O)-, -C(=O)-O-, -O-C(=O)-, -C(=O)-NH-, -NH-, etc. The group Z is a trivalent group. C An example of this is the divalent group Z mentioned above. C We can give an example of a group obtained by removing one hydrogen atom from the same group.

[0059] Base Z C The group Z may have a branched structure. C In a branch chain separate from the branch chain containing the polyalkylene glycol structure shown in formula (G-2a) above, the branch chain may have a polyalkylene glycol structure separate from the polyalkylene glycol structure shown in formula (G-2a) above.

[0060] Base Z CPreferably, it is a linear or branched alkylene group having 1 to 6 carbon atoms, and more preferably a linear alkylene group having 1 to 4 carbon atoms.

[0061] R C The group is an alkylene group, preferably a linear or branched alkylene group having 1 to 6 carbon atoms, and more preferably a linear alkylene group having 1 to 4 carbon atoms.

[0062] In formula (G-2a), n is an integer of 2 or more, preferably between 2 and 540, more preferably between 2 and 120, and even more preferably between 2 and 60.

[0063] The molecular weight of compound (G-2) is preferably 150 to 10,000, more preferably 150 to 5,000, and even more preferably 150 to 4,000. The molecular weight may be the number average molecular weight (Mn) or the weight average molecular weight (Mw). The number average molecular weight and the weight average molecular weight are standard polystyrene equivalent values ​​measured by gel permeation chromatography (GPC).

[0064] When the composition contains compound (G-2), the ratio of compound (G-2) to semiconductor particles (A) in the composition (compound (G-2) / semiconductor particles (A)) is preferably 0.001 or more and 2 or less by mass, more preferably 0.01 or more and 1.5 or less, and even more preferably 0.1 or more and 1 or less.

[0065] If the composition contains compound (G-2), the content of compound (G-2) in the composition is preferably 0.1% by mass or more and 40% by mass or less, more preferably 0.1% by mass or more and 20% by mass or less, even more preferably 1% by mass or more and 15% by mass or less, and even more preferably 2% by mass or more and 12% by mass or less, based on the total amount of solids in the composition.

[0066] When the composition contains an organic ligand (G), the content ratio of the organic ligand (G) to the semiconductor particles (A) in the composition (organic ligand (G) / semiconductor particles (A)) is preferably 0.001 to 1 by mass, more preferably 0.01 to 0.8, even more preferably 0.02 to 0.5, even more preferably 0.02 to 0.45, even more preferably 0.02 to 0.40, and even more preferably 0.02 to 0.35. When the content ratio is within this range, the process suitability of the composition and / or the residual film rate during development can be improved. Furthermore, when the composition contains an organic ligand (G), the content ratio of the organic ligand (G) to the polymerizable compound (D) in the composition (organic ligand (G) / polymerizable compound (D)) is preferably 0.3 to 3, more preferably 0.4 to 2.5, even more preferably 0.5 to 2.0, and even more preferably 0.8 to 1.5 by mass. When this content ratio is within this range, the process suitability of the composition and / or the residual film rate during development can be improved. Furthermore, when the composition contains an organic ligand (G), the content of the organic ligand (G) in the composition is preferably 0.1% to 40% by mass, more preferably 0.2% to 30% by mass, even more preferably 0.2% to 20% by mass, even more preferably 0.5% to 17% by mass, and even more preferably 0.5% to 15% by mass, relative to the total amount of solids in the composition. The content of organic ligands (G) refers to the total content of all organic ligands (G) contained in the composition, and the content rate of organic ligands (G) refers to the total content rate of all organic ligands (G) contained in the composition.

[0067] From the viewpoint of improving the process suitability of the composition and / or the residual film rate of the cured film, the total content of semiconductor particles (A) and organic ligands (G) in the composition is preferably 10% to 75% by mass, more preferably 12% to 70% by mass, and even more preferably 25% to 60% by mass, relative to the total amount of solids in the composition.

[0068] <Light scattering agent (B)> The composition may further contain a light scattering agent (B). The inclusion of a light scattering agent (B) improves the scattering of light from a light source irradiated onto the cured film formed from the composition. The composition may contain two or more types of light scattering agents (B).

[0069] Examples of light scattering agent (B) include metal or metal oxide particles, and inorganic particles such as glass particles. Examples of metal oxides include TiO2, SiO2, BaTiO3, and ZnO, and TiO2 particles are preferred because they efficiently scatter light. The particle size of the light scattering agent (B) is, for example, about 0.03 μm to 20 μm, preferably 0.05 μm to 1 μm, and more preferably 0.05 μm to 0.5 μm. When the particle size of the light scattering agent (B) is within the above range, the process suitability of the composition and / or the residual film rate of the cured film can be improved.

[0070] As the light scattering agent (B), a solution may be used in which the light scattering agent is pre-dispersed in part or all of the solvent (J) using a dispersant. Examples of such dispersants include the dispersant for dispersing light scattering agents described in International Publication No. 2024 / 185881.

[0071] If the composition contains a light scattering agent (B), the content of the light scattering agent (B) in the composition is, for example, 0.001% by mass or more and 50% by mass or less, relative to the total amount of solids in the composition. From the viewpoint of improving the light scattering ability and luminescence intensity of the composition and the cured film, it is preferably 0.5% by mass or more and 40% by mass or less, more preferably 1% by mass or more and 35% by mass or less, even more preferably 3% by mass or more and 30% by mass or less, and even more preferably 6% by mass or more and 30% by mass or less. When the content of the light scattering agent (B) is within the above range, the process suitability of the composition and / or the residual film rate of the cured film can be improved.

[0072] <Resin (C)> Resin (C) is preferably an alkali-soluble resin and may contain two or more resins, including at least one resin. Resin (C) preferably contains an alkali-soluble resin having an ethylenically unsaturated bond, and more preferably contains an alkali-soluble resin having an ethylenically unsaturated bond and a carboxyl group. Examples of resin (C) include the following resins [K1] to [K6], and it is preferable to include resin [K6] from the viewpoint of improving the process suitability of the composition and / or the residual film rate of the cured film.

[0073] Resin [K1]: A copolymer having structural units derived from at least one monomer (a) selected from the group consisting of unsaturated carboxylic acids and unsaturated carboxylic acid anhydrides (hereinafter also referred to as "(a)") and structural units derived from monomer (c) copolymerizable with (a) (however different from (a)) (hereinafter also referred to as "(c)"); Resin [K2]: A copolymer having structural units derived from (a), structural units derived from (c), and structural units derived from monomer (b) having a cyclic ether structure with 2 to 4 carbon atoms and an ethylenically unsaturated bond (hereinafter also referred to as "(b)"); Resin [K3]: A copolymer having structural units obtained by adding (b) to structural units derived from (a) and structural units derived from (c); Resin [K4]: A copolymer having structural units obtained by adding (b) to structural units derived from (a) and further esterifying a carboxylic acid anhydride, and structural units derived from (c); Resin [K5]: A copolymer having a structural unit obtained by adding (a) to a structural unit derived from (b) and a structural unit derived from (c); Resin [K6]: A copolymer having a structural unit obtained by adding (a) to a structural unit derived from (b) and further ester-bonding a carboxylic acid anhydride, and a structural unit derived from (c).

[0074] (a) includes, for example, unsaturated monocarboxylic acids such as (meth)acrylic acid, crotonic acid, o-, m-, p-vinylbenzoic acid; and unsaturated dicarboxylic acids such as maleic acid, fumaric acid, citraconic acid, mesaconic acid, itaconic acid, 3-vinylphthalic acid, 4-vinylphthalic acid, 3,4,5,6-tetrahydrophthalic acid, 1,2,3,6-tetrahydrophthalic acid, dimethyltetrahydrophthalic acid, and 1,4-cyclohexenedicarboxylic acid; Bicyclounsaturated compounds containing carboxyl groups, such as methyl-5-norbornene-2,3-dicarboxylic acid, 5-carboxybicyclo[2.2.1]hept-2-ene, 5,6-dicarboxybicyclo[2.2.1]hept-2-ene, 5-carboxy-5-methylbicyclo[2.2.1]hept-2-ene, 5-carboxy-5-ethylbicyclo[2.2.1]hept-2-ene, 5-carboxy-6-methylbicyclo[2.2.1]hept-2-ene, and 5-carboxy-6-ethylbicyclo[2.2.1]hept-2-ene; Examples include unsaturated dicarboxylic acid anhydrides such as maleic anhydride, citraconic anhydride, itaconic anhydride, 3-vinylphthalic anhydride, 4-vinylphthalic anhydride, 3,4,5,6-tetrahydrophthalic anhydride, 1,2,3,6-tetrahydrophthalic anhydride, dimethyltetrahydrophthalic anhydride, and 5,6-dicarboxybicyclo[2.2.1]hept-2-ene anhydride; unsaturated mono[(meth)acryloyloxyalkyl] esters of divalent or higher polyvalent carboxylic acids such as mono[2-(meth)acryloyloxyethyl] succinate and mono[2-(meth)acryloyloxyethyl] phthalate; and unsaturated (meth)acrylates containing both a hydroxyl group and a carboxyl group in the same molecule, such as α-(hydroxymethyl)(meth)acrylic acid. Of these, (meth)acrylic acid, mono[2-(meth)acryloyloxyethyl] succinate, maleic anhydride, etc. are preferred from the viewpoint of copolymerization reactivity, etc.

[0075] In this specification, (meth)acrylic acid means acrylic acid and / or methacrylic acid. The same applies to "(meth)acryloyl," "(meth)acrylate," etc.

[0076] (b) is a monomer having, for example, a cyclic ether structure with 2 to 4 carbon atoms (for example, at least one selected from the group consisting of an oxirane ring, an oxetane ring, and a tetrahydrofuran ring) and an ethylenically unsaturated bond. Preferably, (b) is a monomer having a cyclic ether structure with 2 to 4 carbon atoms and a (meth)acryloyloxy group.

[0077] Examples of (b) include monomers having an oxyranyl group and an ethylenically unsaturated bond (b1) (hereinafter also referred to as "(b1)"), monomers having an oxetanyl group and an ethylenically unsaturated bond (b2) (hereinafter also referred to as "(b2)"), and monomers having a tetrahydrofuryl group and an ethylenically unsaturated bond (b3) (hereinafter also referred to as "(b3)").

[0078] Examples of (b1) include monomers having a linear or branched aliphatic unsaturated hydrocarbon structure that has been epoxidized (b1-1) (hereinafter also referred to as "(b1-1)") and monomers having a cyclic unsaturated hydrocarbon structure that has been epoxidized (b1-2) (hereinafter also referred to as "(b1-2)").

[0079] (b1-1) includes, for example, glycidyl (meth)acrylate, β-methylglycidyl (meth)acrylate, β-ethylglycidyl (meth)acrylate, glycidyl vinyl ether, o-vinylbenzylglycidyl ether, m-vinylbenzylglycidyl ether, p-vinylbenzylglycidyl ether, α-methyl-o-vinylbenzylglycidyl ether, α-methyl-m-vinylbenzylglycidyl ether, α-methyl-p-vinylbenzylglycidyl ether, 2,3-bis(glycidyl Examples include (zyloxymethyl)styrene, 2,4-bis(glycidyloxymethyl)styrene, 2,5-bis(glycidyloxymethyl)styrene, 2,6-bis(glycidyloxymethyl)styrene, 2,3,4-tris(glycidyloxymethyl)styrene, 2,3,5-tris(glycidyloxymethyl)styrene, 2,3,6-tris(glycidyloxymethyl)styrene, 3,4,5-tris(glycidyloxymethyl)styrene, and 2,4,6-tris(glycidyloxymethyl)styrene.

[0080] Examples of (b1-2) include vinylcyclohexene monooxide, 1,2-epoxy-4-vinylcyclohexane (e.g., Celoxide 2000; manufactured by Daicel Corporation), 3,4-epoxycyclohexylmethyl (meth)acrylate (e.g., Cyclomer A400; manufactured by Daicel Corporation), 3,4-epoxycyclohexylmethyl (meth)acrylate (e.g., Cyclomer M100; manufactured by Daicel Corporation), compounds represented by formula (BI), and compounds represented by formula (BII).

[0081]

[0082] [In formulas (BI) and (BII), R e and R f X represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and the hydrogen atom contained in the alkyl group may be substituted with a hydroxyl group. e and X f This is a single bond, *-R g -, *-R g -O-, *-R g -S- or *-R g Represents -NH-. g * represents an alkanediyl group with 1 to 6 carbon atoms. * represents a bond with oxygen.

[0083] Examples of C1-C4 alkyl groups include methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, tert-butyl group, etc. Examples of alkyl groups in which hydrogen atoms are substituted with hydroxyl include hydroxymethyl group, 1-hydroxyethyl group, 2-hydroxyethyl group, 1-hydroxypropyl group, 2-hydroxypropyl group, 3-hydroxypropyl group, 1-hydroxy-1-methylethyl group, 2-hydroxy-1-methylethyl group, 1-hydroxybutyl group, 2-hydroxybutyl group, 3-hydroxybutyl group, 4-hydroxybutyl group, etc. e and R fPreferably, the group is a hydrogen atom, a methyl group, a hydroxymethyl group, a 1-hydroxyethyl group, or a 2-hydroxyethyl group, and more preferably, a hydrogen atom or a methyl group.

[0084] Examples of the alkanediyl group include methylene group, ethylene group, propane-1,2-diyl group, propane-1,3-diyl group, butane-1,4-diyl group, pentane-1,5-diyl group, hexane-1,6-diyl group, and the like. e and X f Preferably, the bonds include single bonds, methylene groups, ethylene groups, *-CH2-O- and *-CH2CH2-O-, and more preferably single bonds and *-CH2CH2-O- (where * represents a bond with O).

[0085] Compounds represented by formula (BI) include compounds represented by any of formulas (BI-1) to (BI-15). Among these, compounds represented by formulas (BI-1), (BI-3), (BII-5), (BI-7), (BI-9), or (BI-11) to (BI-15) are preferred, and compounds represented by formulas (BI-1), (BI-7), (BI-9), or (BI-15) are more preferred.

[0086]

[0087] Compounds represented by formula (BII) include compounds represented by any of formulas (BII-1) to (BII-15). Among these, compounds represented by formulas (BII-1), (BII-3), (BII-5), (BII-7), (BII-9), or (BII-11) to (BII-15) are preferred, and compounds represented by formulas (BII-1), (BII-7), (BII-9), or (BII-15) are more preferred.

[0088]

[0089] The compound represented by formula (BI) and the compound represented by formula (BII) may be used individually or in combination of two or more. When the compound represented by formula (BI) and the compound represented by formula (BII) are used in combination, their content ratio [compound represented by formula (BI):compound represented by formula (BII)] is preferably 5:95 to 95:5, more preferably 20:80 to 80:20, on a molar basis.

[0090] For (b2), monomers having an oxetanyl group and a (meth)acryloyloxy group are more preferred. Examples of (b2) include 3-methyl-3-methacryloyloxymethyl oxetane, 3-methyl-3-acryloyloxymethyl oxetane, 3-ethyl-3-methacryloyloxymethyl oxetane, 3-methyl-3-methacryloyloxyethyl oxetane, 3-methyl-3-acryloyloxyethyl oxetane, 3-ethyl-3-methacryloyloxyethyl oxetane, and 3-ethyl-3-acryloyloxyethyl oxetane.

[0091] For (b3), monomers having a tetrahydrofurfuryl group and a (meth)acryloyloxy group are more preferred. Specifically for (b3), examples include tetrahydrofurfuryl acrylate (e.g., Viscoat V#150, manufactured by Osaka Organic Chemical Industry Co., Ltd.) and tetrahydrofurfuryl methacrylate.

[0092] (b) is preferably (b1) in that it can provide higher reliability in terms of chemical resistance, etc. Since the reactivity during the production of resins [K3] to [K6] is high and unreacted (b) is less likely to remain, (b) is preferably a monomer having an oxirane ring and an ethylenically unsaturated bond.

[0093] (c) For example, methyl (meth)acrylate, ethyl (meth)acrylate, n-butyl (meth)acrylate, sec-butyl (meth)acrylate, tert-butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, dodecyl (meth)acrylate, lauryl (meth)acrylate, stearyl (meth)acrylate, cyclopentyl (meth)acrylate, cyclohexyl (meth)acrylate, 2-methylcyclohexyl (meth)acrylate, tricyclo[5.2.1.0 2,6 ] Decane-8-yl (meth)acrylate (in the relevant technical field, it is commonly called "dicyclopentanyl (meth)acrylate". It is also sometimes called "tricyclodecyl (meth)acrylate"), tricyclo[5.2.1.0 2,6(Meth)acrylic acid esters such as decen-8-yl (meth)acrylate (also commonly referred to as "dicyclopentenyl (meth)acrylate" in the relevant technical field), dicyclopentanyloxyethyl (meth)acrylate, isobornyl (meth)acrylate, adamantyl (meth)acrylate, allyl (meth)acrylate, propargyl (meth)acrylate, phenyl (meth)acrylate, naphthyl (meth)acrylate, and benzyl (meth)acrylate; hydroxyl group-containing (meth)acrylic acid esters such as 2-hydroxyethyl (meth)acrylate and 2-hydroxypropyl (meth)acrylate; dicarboxylic acid diesters such as diethyl maleate, diethyl fumarate, and diethyl itaconate;Bicyclo[2.2.1]hept-2-ene, 5-methylbicyclo[2.2.1]hept-2-ene, 5-ethylbicyclo[2.2.1]hept-2-ene, 5-hydroxybicyclo[2.2.1]hept-2-ene, 5-hydroxymethylbicyclo[2.2.1]hept-2-ene, 5-(2'-hydroxyethyl)bicyclo[2.2.1]hept-2-ene, 5-methoxybi Cyclo[2.2.1]hept-2-ene, 5-ethoxybicyclo[2.2.1]hept-2-ene, 5,6-dihydroxybicyclo[2.2.1]hept-2-ene, 5,6-di(hydroxymethyl)bicyclo[2.2.1]hept-2-ene, 5,6-di(2'-hydroxyethyl)bicyclo[2.2.1]hept-2-ene, 5,6-dimethoxybicyclo[2.2.1]hept-2-ene To-2-ene, 5,6-diethoxybicyclo[2.2.1]hept-2-ene, 5-hydroxy-5-methylbicyclo[2.2.1]hept-2-ene, 5-hydroxy-5-ethylbicyclo[2.2.1]hept-2-ene, 5-hydroxymethyl-5-methylbicyclo[2.2.1]hept-2-ene, 5-tert-butoxycarbonylbicyclo[2.2.1]hept-2 Bicyclounsaturated compounds such as -ene, 5-cyclohexyloxycarbonylbicyclo[2.2.1]hept-2-ene, 5-phenoxycarbonylbicyclo[2.2.1]hept-2-ene, 5,6-bis(tert-butoxycarbonyl)bicyclo[2.2.1]hept-2-ene, and 5,6-bis(cyclohexyloxycarbonyl)bicyclo[2.2.1]hept-2-ene; Dicarbonylimide derivatives such as N-phenylmaleimide, N-cyclohexylmaleimide, N-benzylmaleimide, N-succinimidyl-3-maleimide benzoate, N-succinimidyl-4-maleimide butyrate, N-succinimidyl-6-maleimide caproate, N-succinimidyl-3-maleimide propionate, and N-(9-acridinyl)maleimide; styrene, α-methylstyrene, m-methylstyrene, p-methylstyrene, vinyltoluene, p-methoxystyrene, acrylonitrile, methacrylonitrile, vinyl chloride, vinylidene chloride, acrylamide, methacrylamide, vinyl acetate, 1,3-butadiene isoprene, and 2,3-dimethyl-1,3-butadiene;These are some examples. Of these, in terms of copolymerization reactivity and the heat resistance of resin (B), (c) is methyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, dicyclopentanyl (meth)acrylate, styrene, vinyltoluene, N-phenylmaleimide, N-cyclohexylmaleimide, N-benzylmaleimide, tricyclo[5.2.1.0; 2,6 Decan-8-yl(meth)acrylate, bicyclo[2.2.1]hept-2-ene, etc. are preferred.

[0094] The composition (ratio of structural units derived from monomers) and manufacturing methods of resins other than resin [K6], such as resins [K1] to resin [K5], can be determined by referring to the resin composition and manufacturing methods described in International Publication No. 2024 / 185881.

[0095] Resin [K6] is a resin obtained by reacting a cyclic ether derived from (b) in a copolymer of (b) and (c) with a carboxylic acid and / or carboxylic acid anhydride in (a), and then reacting the hydroxyl group generated by this reaction with a carboxylic acid anhydride.

[0096] In the copolymer of (b) and (c), the ratio of structural units derived from (b) and (c) is preferably such that, with respect to the total number of moles of all structural units constituting the copolymer, the ratio of structural units derived from (b) is 5 mol% to 95 mol%, and the ratio of structural units derived from (c) is 5 mol% to 95 mol%, and it is more preferably such that the ratio of structural units derived from (b) is 10 mol% to 90 mol%, and the ratio of structural units derived from (c) is 10 mol% to 90 mol%.

[0097] The amount of (a) used to react with the copolymer of (b) and (c) is preferably 5 moles to 120 moles, and more preferably 20 moles to 110 moles, per 100 moles of (b).

[0098] Examples of carboxylic acid anhydrides include succinic anhydride, maleic anhydride, citraconic anhydride, itaconic anhydride, 3-vinylphthalic anhydride, 4-vinylphthalic anhydride, 3,4,5,6-tetrahydrophthalic anhydride, 1,2,3,6-tetrahydrophthalic anhydride, dimethyltetrahydrophthalic anhydride, and 5,6-dicarboxybicyclo[2.2.1]hept-2-ene anhydride.

[0099] The amount of carboxylic acid anhydride used is preferably 0.10 to 1 mole, more preferably 0.13 to 1 mole, and even more preferably 0.15 to 1 mole, per 1 mole of the amount of (a) used.

[0100] Specific examples of resins [K1] to [K5] include, for example, the specific examples of resins [K1] to [K5] described in International Publication No. 2024 / 185881. Examples of resin [K6] include a resin obtained by adding (meth)acrylic acid to a copolymer of tricyclodecyl (meth)acrylate / glycidyl (meth)acrylate, and further esterifying it with tetrahydrophthalic anhydride or succinic anhydride; a resin obtained by adding (meth)acrylic acid to a copolymer of dicyclopentanyl (meth)acrylate / 2-ethylhexyl (meth)acrylate / glycidyl (meth)acrylate, and further esterifying it with tetrahydrophthalic anhydride or succinic anhydride.

[0101] The weight-average molecular weight (Mw) of resin (C), measured by gel permeation chromatography (GPC) on a standard polystyrene basis, is, for example, 1,000 to 100,000, preferably 2,000 to 50,000, and more preferably 3,000 to 20,000, from the viewpoint of developability and luminescence intensity of the composition. Furthermore, from the viewpoint of process suitability of the composition and / or improving the residual film rate of the cured film, the weight-average molecular weight of resin (C) is preferably 5,000 to 10,000, more preferably 5,500 to 9,000, and even more preferably 6,000 to 8,000. The weight-average molecular weight of resin (C) can be adjusted by appropriately combining reaction conditions such as the selection of raw materials used, the preparation method, the reaction temperature, and the reaction time. The weight-average molecular weight of resin (C) can also be measured according to the measurement method described in the Examples section below.

[0102] The acid value of resin (C) is preferably less than 120 mg KOH / g, more preferably 1 mg KOH / g or more and less than 120 mg KOH / g, even more preferably 5 mg KOH / g or more and 110 mg KOH / g or less, even more preferably 10 mg KOH / g or more and 100 mg KOH / g or less, even more preferably 15 mg KOH / g or more and 80 mg KOH / g or less, even more preferably 20 mg KOH / g or more and 60 mg KOH / g or less, and even more preferably 25 mg KOH / g or more and 40 mg KOH / g or less. In particular, setting the upper limit of the acid value of resin (C) within the above range can further improve the process suitability of the composition. When the acid value of resin (C) is within the above range, the composition exhibits appropriate hydrophilicity, its affinity with the developer is easily improved, and the unexposed composition has appropriate solubility in the developer, which is preferable. The acid value of resin (C) can be adjusted by the content of monomer components having acid groups (for example, (a) above) or by the content of carboxylic acid anhydrides that react with the hydroxyl groups generated by the reaction of cyclic ethers with carboxylic acids and / or carboxylic acid anhydrides.

[0103] The acid value of resin (C) is measured as the amount (mg) of potassium hydroxide required to neutralize 1 g of resin (C), and can be determined, for example, by titration using an aqueous potassium hydroxide solution. Specifically, it can be measured according to the measurement method described in the Examples section below. Alternatively, the acid value of resin (C) contained in the composition may be determined, for example, by performing a structural analysis of it.

[0104] The double bond equivalent of resin (C) is preferably 500 g / eq or less, more preferably 150 g / eq to 500 g / eq, even more preferably 200 g / eq to less than 500 g / eq, even more preferably 230 g / eq to 450 g / eq, even more preferably 250 g / eq to 400 g / eq, even more preferably 270 g / eq to 360 g / eq, and even more preferably 290 g / eq to 340 g / eq. In particular, by setting the upper limit of the double bond equivalent of resin (C) within the above range, the composition exhibits appropriate hydrophilicity, its affinity with the developer is easily improved, and the unexposed composition has appropriate solubility in the developer, thus reducing development defects and development residue during development. Furthermore, in the exposure and thermosetting processes, the double bond sites of resin (C) can react sufficiently with the polymerizable compound (D) described later, resulting in a good residual film rate. The double bond equivalent is the mass (solid content) of resin per 1 mol of polymerizable unsaturated bonds in resin (C). Examples of resin (C) with a double bond equivalent within the above range include (meth)acrylic resins. Resin (C) is preferably a (meth)acrylic resin.

[0105] The resin (C) content in the composition is, for example, 5% by mass or more and 80% by mass or less, preferably 10% by mass or more and 70% by mass or less, more preferably 15% by mass or more and 60% by mass or less, and even more preferably 20% by mass or more and 50% by mass or less, based on the total amount of solids in the composition.

[0106] The content ratio of resin (C) to semiconductor particles (A) in the composition (resin (C) / semiconductor particles (A)) is preferably 0.3 to 3 by mass, more preferably 0.4 to 2, even more preferably 0.5 to 1.5, and even more preferably 0.6 to 1.0.

[0107] The content ratio of resin (C) to polymerizable compound (D) in the composition (resin (C) / polymerizable compound (D)) is preferably 0.5 to 10 by mass, more preferably 1.0 to 7, even more preferably 1.5 to 5, and even more preferably 2.0 to 3.5.

[0108] <Polymerizable Compound (D)> Polymerizable compound (D) is a compound that can be polymerized by active radicals, acids, etc., and in particular is a compound that can be polymerized by active radicals, acids, etc. generated from the polymerization initiator (E) described later. Examples of polymerizable compound (D) include photopolymerizable compounds that harden by irradiation with light and thermopolymerizable compounds that harden by heat, and it is preferable that it be a photopolymerizable compound. The molecular weight or weight-average molecular weight of the photopolymerizable compound is, for example, 100 to 3000, preferably 150 to 2900, and more preferably 180 to 1500. The composition contains at least one polymerizable compound (D), and may contain two or more polymerizable compounds (D).

[0109] Polymerizable compound (D) contains at least a polymerizable compound (Da) having a functional group that exhibits coordinating ability (hereinafter, polymerizable compound (Da) having a functional group that exhibits coordinating ability will also be simply referred to as "polymerizable compound (Da)"), and may also contain a polymerizable compound (Db) that does not have a functional group that exhibits coordinating ability (hereinafter, polymerizable compound (Db) that does not have a functional group that exhibits coordinating ability will also be simply referred to as "polymerizable compound (Db)").

[0110] <Polymerizable Compound (Da)> In the composition, the polymerizable compound (Da) may be present in a state in which part or all of it is coordinated to the semiconductor particle (A), and it is preferable that at least a part of it is coordinated to the semiconductor particle (A). The polymerizable compound (Da) can, for example, coordinate to the surface of the semiconductor particle (A). The polymerizable compound (Da) usually coordinates to the semiconductor particle (A) via the functional group exhibiting the coordination ability. The composition may contain two or more polymerizable compounds (Da). By including the polymerizable compound (Da), the composition can contain a certain amount of polymerizable compound (D) while maintaining the value R described below. Df / A It becomes easier to set it to less than 0.6.

[0111] The functional group exhibiting coordinating ability in the polymerizable compound (Da) is preferably a polar group that exhibits coordinating ability to semiconductor particles (A). From the viewpoint of good coordination to semiconductor particles (A), the functional group exhibiting coordinating ability is preferably at least one group selected from the group consisting of thiol groups (-SH), carboxyl groups (-COOH), hydroxyl groups (-OH), and amino groups (-NH2). Among these, the functional group exhibiting coordinating ability is more preferably a carboxyl group or a hydroxyl group, and particularly preferably a carboxyl group. The polymerizable compound (Da) may have one or more functional groups exhibiting coordinating ability within its molecule. If it has two or more, it may have functional groups exhibiting different types of coordinating ability within a single molecule, but it is preferable to have at least a carboxyl group or a hydroxyl group. The polymerizable compound (Da) suppresses the aggregation of semiconductor particles (A) and readily shows coordination to semiconductor particles (A). Therefore, it is preferable that the molecule has one or two functional groups exhibiting coordinating ability, and more preferably that it has one functional group exhibiting coordinating ability.

[0112] The polymerizable compound (Da) preferably has one or more polymerizable functional groups in its molecule, more preferably has two or more polymerizable functional groups, and even more preferably has three or more polymerizable functional groups, from the viewpoint of improving the process suitability of the composition and / or the residual film rate of the cured film. The number of polymerizable functional groups in one molecule of the polymerizable compound (Da) is preferably 3 to 6, more preferably 3 to 5, and even more preferably 3. When the number of polymerizable functional groups in the molecule is within the above range, the crosslinking reaction of the composition proceeds appropriately, the resistance of the cured film to the developer is improved, and as a result the residual film rate of the cured film is improved.

[0113] Examples of polymerizable functional groups include groups having an ethylenically unsaturated bond, such as vinyl groups, vinyloxy groups, 1-chlorovinyl groups, isopropenyl groups, 4-vinylphenyl groups, and (meth)acryloyloxy groups; groups having a cyclic ether, such as oxyranyl groups and oxetanyl groups; and it is preferable that the group has an ethylenically unsaturated bond. From the viewpoint of improving the process suitability of the composition and / or the residual film rate of the cured film, among the polymerizable functional groups of the polymerizable compound (Da), (meth)acryloyloxy groups and vinyloxy groups are preferred, (meth)acryloyloxy groups are more preferred, and acryloyloxy groups are even more preferred.

[0114] Polymerizable compounds (Da) having a hydroxyl group (-OH) as a functional group exhibiting coordinating ability include, for example, pentaerythritol tri(meth)acrylate, dipentaerythritol penta(meth)acrylate, dipentaerythritol EO-modified penta(meth)acrylate, and dipentaerythritol PO-modified penta(meth)acrylate, with pentaerythritol tri(meth)acrylate and dipentaerythritol penta(meth)acrylate being preferred. Note that EO modification means ethylene oxide modification, and PO modification means propylene oxide modification. Examples of commercially available polymerizable compounds (Da) having a hydroxyl group (-OH) as a functional group exhibiting coordinating ability include "KAYARAD R-128H, R-167" manufactured by Nippon Kayaku Co., Ltd., "Aronix M-5700, M-920" manufactured by Toagosei Co., Ltd., and "NK Ester 701A, A-9550" manufactured by Shin Nakamura Chemical Industry Co., Ltd.

[0115] Polymerizable compounds (Da) having a carboxyl group (-COOH) as a functional group exhibiting coordinating ability include, for example, compounds obtained by esterifying a dicarboxylic acid with a compound having three or more (meth)acryloyloxy groups and hydroxyl groups, such as pentaerythritol tri(meth)acrylate and dipentaerythritol penta(meth)acrylate. Examples of such compounds include compounds obtained by monoesterifying pentaerythritol tri(meth)acrylate with succinic acid, compounds obtained by monoesterifying dipentaerythritol penta(meth)acrylate with succinic acid, compounds obtained by monoesterifying pentaerythritol tri(meth)acrylate with maleic acid, and compounds obtained by monoesterifying dipentaerythritol penta(meth)acrylate with maleic acid. Among these, compounds obtained by monoesterifying pentaerythritol tri(meth)acrylate with succinic acid are preferred. Examples of commercially available polymerizable compounds (Da) having a carboxyl group (-COOH) as a functional group exhibiting coordinating ability include "Arronix M-510" and "Arronix M-520D" manufactured by Toagosei Co., Ltd.

[0116] Polymerizable compounds (Da) having a thiol group (-SH) as a functional group exhibiting coordinating ability include, for example, compounds obtained by introducing a thiol group into compounds having three or more (meth)acryloyloxy groups and hydroxyl groups, such as pentaerythritol tri(meth)acrylate and dipentaerythritol penta(meth)acrylate (e.g., pentaerythritol tri(meth)acrylate-thiol derivatives). The introduction of the thiol group can be carried out by known methods.

[0117] Polymerizable compounds (Da) having an amino group (-NH2) as a functional group exhibiting coordination ability include, for example, compounds obtained by introducing an amino group into compounds having three or more (meth)acryloyloxy groups and hydroxyl groups, such as pentaerythritol tri(meth)acrylate and dipentaerythritol penta(meth)acrylate (e.g., pentaerythritol tri(meth)acrylate-amine derivatives). The introduction of the amino group can be carried out by known methods.

[0118] <Polymerizable Compound (Db)> From the viewpoint of improving the process suitability of the composition and / or the residual film rate of the cured film, the polymerizable compound (Db) preferably has one or more polymerizable functional groups (specifically, groups having ethylenically unsaturated bonds, preferably (meth)acryloyloxy groups, more preferably acryloyloxy groups) in the molecule, and more preferably has two or more polymerizable functional groups. There is no particular upper limit to the number of polymerizable functional groups, but for example, there may be six or fewer in the molecule, preferably four or fewer, more preferably three or fewer, and even more preferably two. When the polymerizable compound (Db) has two or more polymerizable functional groups in the molecule, it may have only one type of polymerizable functional group, or two or more types, and it is preferable to have only one type.

[0119] From the viewpoint of improving the process suitability of the composition and / or the residual film rate of the cured film, it is preferable that the polymerizable compound (Db) contains a polymerizable compound (Dba) having one or more cyclic hydrocarbon groups in its molecule (hereinafter, a polymerizable compound (Dba) that does not have a functional group exhibiting coordinating ability in its molecule and has one or more cyclic hydrocarbon groups will also be simply referred to as "polymerizable compound (Dba)"). By including a polymerizable compound having a cyclic hydrocarbon group in its molecule in the composition, the hydrophobicity of the composition can be increased, making it easier to adjust the development speed. The polymerizable compound (Db) may also contain a polymerizable compound (Dbb) that does not have a cyclic hydrocarbon group in its molecule (hereinafter, a polymerizable compound (Dbb) that does not have a functional group exhibiting coordinating ability and a cyclic hydrocarbon group in its molecule will also be simply referred to as "polymerizable compound (Dbb)"). The cyclic hydrocarbon group means a group obtained by removing the same number of hydrogen atoms as the number of bonds from a cyclic hydrocarbon, and examples of cyclic hydrocarbons include aromatic hydrocarbons and alicyclic hydrocarbons.

[0120] The aromatic hydrocarbon may be monocyclic or polycyclic. The number of carbon atoms in the aromatic hydrocarbon is preferably 4 to 25, more preferably 4 to 20, even more preferably 6 to 14, and still more preferably 6 to 12. Examples of aromatic hydrocarbons include benzene, indene, naphthalene, azulene, fluorene, anthracene, naphthacene, and biphenyl, with benzene, naphthalene, and biphenyl being preferred, and benzene being particularly preferred. The alicyclic hydrocarbon may be saturated or unsaturated, and may be monocyclic or polycyclic. The number of carbon atoms in the alicyclic hydrocarbon is preferably 3 to 25, more preferably 4 to 20, even more preferably 5 to 15, and still more preferably 7 to 12. As for the alicyclic hydrocarbon, saturated alicyclic hydrocarbons are preferred, saturated polycyclic hydrocarbons are more preferred, and saturated bridged cyclic hydrocarbons with 7 to 12 carbon atoms are even more preferred.

[0121] The polymerizable compound (Dba) preferably has at least one aromatic hydrocarbon group (a group obtained by removing the same number of hydrogen atoms as the number of bonds from an aromatic hydrocarbon) in its molecule, and more preferably has at least one six-membered ring aromatic hydrocarbon group in its molecule. In the polymerizable compound (Dba), the number of cyclic hydrocarbon groups in the molecule is preferably 1 to 4, more preferably 1 to 3, and even more preferably 2 to 3. When counting the number of rings in this specification, cyclic hydrocarbon groups having a fused ring structure (e.g., naphthalene, tricyclo[5.2.1.0 2,6 For groups such as decane (where the number of hydrogen atoms in the bonding hands is removed), the fused ring is counted as one ring. Therefore, compounds in which two rings are bonded together with one carbon atom sharing a single carbon atom, such as spiro compounds, have two rings.

[0122] Examples of polymerizable compounds (Dba) include di(meth)acrylate of EO-modified bisphenol A, di(meth)acrylate of PO-modified bisphenol A, di(meth)acrylate of EO-modified bisphenol F, di(meth)acrylate of PO-modified bisphenol F, di(meth)acrylate of EO-modified bisphenol fluorene, and di(meth)acrylate of PO-modified bisphenol fluorene.

[0123] The polymerizable compound (Dbb) is not particularly limited, and polymerizable compounds that do not have a coordinating functional group or a cyclic hydrocarbon group can be used. Examples include (meth)acrylic compounds having two ethylenically unsaturated bonds in their molecules, such as alkylene glycol di(meth)acrylate, polyoxyalkylene glycol di(meth)acrylate, halogen-substituted alkylene glycol di(meth)acrylate, and aliphatic diol di(meth)acrylate; and (meth)acrylic compounds having three or more ethylenically unsaturated bonds in their molecules, such as trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, tripentaerythritol octa(meth)acrylate, tripentaerythritol hepta(meth)acrylate, tetrapentaerythritol deca(meth)acrylate, and tetrapentaerythritol nona(meth)acrylate.

[0124] The content of polymerizable compound (D) in the composition is preferably 3% to 30% by mass, more preferably 4% to 25% by mass, even more preferably 5% to 20% by mass, and even more preferably 6% to 15% by mass, based on the total amount of solids in the composition. When the content of polymerizable compound (D) is within the above range, the process suitability of the composition and / or the residual film rate of the cured film can be improved.

[0125] The content ratio of polymerizable compound (D) to semiconductor particles (A) in the composition (polymerizable compound (D) / semiconductor particles (A)) is preferably 0.05 to 2.0 by mass, more preferably 0.10 to 1.5, even more preferably 0.15 to 1.0, and even more preferably 0.20 to 0.8. When this content ratio is within this range, the process suitability of the composition and / or the residual film rate during development can be improved.

[0126] The content of polymerizable compound (D) is preferably 10% to 100% by mass, more preferably 20% to 90% by mass, even more preferably 25% to 80% by mass, even more preferably 30% to 70% by mass, and even more preferably 35% to 60% by mass, relative to the total amount of polymerizable compound (D). When the content is within this range, the process suitability of the composition and / or the residual film rate during development can be improved.

[0127] The content of polymerizable compound (Da) in the composition is preferably 1.0% to 50% by mass, more preferably 2.0% to 30% by mass, even more preferably 3.0% to 20% by mass, and even more preferably 3.0% to 15% by mass, relative to the total amount of solids in the composition. When the content is within this range, the process suitability of the composition and / or the residual film rate during development can be improved.

[0128] When the composition contains polymerizable compound (Db), the content ratio of polymerizable compound (Db) (preferably polymerizable compound (Dba)) to polymerizable compound (Da) (polymerizable compound (Db) / polymerizable compound (Da)) is preferably 0.1 to 3.0 by mass, more preferably 0.3 to 2.5, even more preferably 0.5 to 2.2, even more preferably 0.8 to 2.0, and even more preferably 1.0 to 1.8. When this content ratio is within this range, the process suitability of the composition and / or the residual film rate during development can be improved.

[0129] If the composition contains a polymerizable compound (Db), the content of the polymerizable compound (Db) (preferably polymerizable compound (Dba)) in the composition is preferably 1.0% by mass or more and 40% by mass or less, more preferably 2.0% by mass or more and 30% by mass or less, even more preferably 3.0% by mass or more and 20% by mass or less, and even more preferably 3.5% by mass or more and 15% by mass or less, based on the total amount of solids in the composition.

[0130] <Polymerization Initiator (E)> The composition may further contain a polymerization initiator (E). The polymerization initiator (E) is a compound that generates active radicals, acids, etc., upon the action of light or heat, and can initiate the polymerization of the polymerizable compound (D). The composition may contain one or more polymerization initiators (E).

[0131] Examples of polymerization initiators (E) include photopolymerization initiators such as oxime compounds, alkylphenone compounds, biimidazole compounds, triazine compounds, acylphosphine compounds, benzoin compounds, benzophenone compounds, quinone compounds, 10-butyl-2-chloroacridone, benzyl, methyl phenylglyoxylate, and titanocene compounds; and thermal polymerization initiators such as azo compounds and organic peroxides. Specifically, as the oxime compounds, alkylphenone compounds, biimidazole compounds, triazine compounds, acylphosphine compounds, benzoin compounds, benzophenone compounds, and quinone compounds, compounds exemplified in International Publication No. 2024 / 185881 can be used.

[0132] The polymerization initiator (E) preferably contains at least an oxime compound. When the polymerization initiator (E) contains an oxime compound, the polymerization efficiency of the composition during exposure is improved, thereby increasing the resistance of the cured film to the developer. As a result, it becomes easier to improve the residual film rate of the cured film. The polymerization initiator (E) preferably contains, in particular, a compound represented by the following formula (DA) as the oxime compound.

[0133] [In the formula, R d1 R represents a branched hydrocarbon group having 3 to 20 carbon atoms, which may have substituents. d2 ~R d5 Each of these independently represents a hydrocarbon group having 1 to 20 carbon atoms, which may have substituents. n represents an integer from 0 to 4. The -CH2- contained in the hydrocarbon group may be replaced with -O-, -S-, -CO-, or -OCO-.

[0134] R d1Examples of branched hydrocarbon groups having 3 to 20 carbon atoms, represented by , include branched saturated hydrocarbon groups having 3 to 20 carbon atoms and branched unsaturated hydrocarbon groups having 3 to 20 carbon atoms.

[0135] R d1Examples of branched-chain saturated hydrocarbon groups having 3 to 20 carbon atoms, represented by , include 1-methylethyl group (isopropyl group), 1-methylpropyl group (sec-butyl group), 2-methylpropyl group (isobutyl group), 1,1-dimethylethyl group (tert-butyl group), 1,1-dimethylpropyl group, 2,2-dimethylpropyl group, 1,2-dimethylpropyl group, 1-ethylpropyl group, 1-methylbutyl group, 2-methylbutyl group, 3-methylbutyl group, 1,1-dimethylbutyl group, and 2,2-dimethylbutyl group. Group, 3,3-dimethylbutyl group, 1,2-dimethylbutyl group, 1,3-dimethylbutyl group, 2,3-dimethylbutyl group, 1-ethylbutyl group, 2-ethylbutyl group, 1-methylpentyl group, 2-methylpentyl group, 3-methylpentyl group, 4-methylpentyl group, 1,1-dimethylpentyl group, 2,2-dimethylpentyl group, 3,3-dimethylpentyl group, 1,2-dimethylpentyl group, 1,3-dimethylpentyl group, 2,3-dimethylpentyl group, 1-ethylpentyl group, 2-ethylpentyl group, 3-ethylpentyl group, 1-methylhexyl group, 2-methylhexyl group, 3-methylhexyl group, 4-methylhexyl group, 1,1-dimethylhexyl group, 2,2-dimethylhexyl group, 3,3-dimethylhexyl group, 1,2-dimethylhexyl group, 1,3-dimethylhexyl group, 2,3-dimethylhexyl group, 1-ethylhexyl group, 2-ethylhexyl group, 3-ethylhexyl group, 1-methylheptyl group, 2-methylheptyl group, 3-methylheptyl group, 4-methylheptyl group, 1,1-dimethyl Heptyl group, 2,2-dimethylheptyl group, 3,3-dimethylheptyl group, 1,2-dimethylheptyl group, 1,3-dimethylheptyl group, 2,3-dimethylheptyl group, 1-ethylheptyl group, 2-ethylheptyl group, 3-ethylheptyl group, 1-methyloctyl group, 2-methyloctyl group, 3-methyloctyl group, 4-methyloctyl group, 1,1-dimethyloctyl group, 2,2-dimethyloctyl group, 3,3-dimethyloctyl group, 1,2-dimethyloctyl group, 1,3-dimethyloctyl group, 2,Examples include branched alkyl groups such as 3-dimethyloctyl group, 1-ethyloctyl group, 2-ethyloctyl group, 3-ethyloctyl group, 1-methylnonyl group, 2-methylnonyl group, 3-methylnonyl group, 4-methylnonyl group, dimethylnonyl group, ethylnonyl group, methyldecyl group, dimethyldecyl group, ethyldecyl group, methylundecyl group, dimethylundecyl group, ethylundecyl group, and methyldodecyl group. d1 The branched alkyl group represented by may be a primary branched alkyl group, a secondary branched alkyl group, or a tertiary branched alkyl group. d1 The number of carbon atoms in the branched saturated hydrocarbon group represented by is preferably 4 to 16, more preferably 5 to 12, and even more preferably 5 to 10.

[0136] R d1 The branched unsaturated hydrocarbon group represented by the aforementioned R is d1 Examples include a branched saturated hydrocarbon group represented by , in which at least one carbon-carbon single bond is replaced by a carbon-carbon double bond or a carbon-carbon triple bond. d1 Examples of branched unsaturated hydrocarbon groups represented by include alkenyl groups such as isopropenyl, isobutenyl, isopentenyl, isohexenyl, isoheptenyl, isooctenyl, isononyl, and isodecenyl groups; and alkynyl groups such as isopropynyl, isobutynyl, isopentinyl, isohexynyl, isoheptynyl, isooctynyl, isononinyl, and isodesynyl groups. d1 The number of carbon atoms in the branched unsaturated hydrocarbon group represented by is preferably 4 to 16, more preferably 5 to 12, and even more preferably 5 to 10.

[0137] R d2 , R d3 , R d4 and R d5 Examples of hydrocarbon groups having 1 to 20 carbon atoms represented by include saturated hydrocarbon groups having 1 to 20 carbon atoms, unsaturated hydrocarbon groups having 2 to 20 carbon atoms, and aromatic hydrocarbon groups having 6 to 20 carbon atoms. d2 , R d3 , R d4and R d5 The hydrocarbon groups represented by may be the same or different.

[0138] Examples of the saturated hydrocarbon groups having 1 to 20 carbon atoms include linear alkyl groups such as methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, dodecyl, hexadecyl, and eicosyl groups; branched alkyl groups such as isopropyl, isobutyl, isopentyl, neopentyl, and 2-ethylhexyl groups; and alicyclic saturated hydrocarbon groups having 3 to 20 carbon atoms such as cyclopropyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, and tricyclodecyl groups. The number of carbon atoms in the saturated hydrocarbon group is preferably 1 to 18, more preferably 1 to 15, even more preferably 1 to 10, and even more preferably 1 to 8.

[0139] Examples of the carbon-2 to carbon-20 unsaturated hydrocarbon groups include alkenyl groups such as vinyl, allyl, butenyl, pentenyl, hexenyl, heptenyl, octenyl, nonenyl, decenyl, undecenyl, dodecenyl, hexadecenyl, octadecenyl, and eicosenyl groups; alkynyl groups such as ethynyl, propynyl, hexynyl, desinyl, and eicosinyl groups; and cycloalkenyl groups such as cyclopentenyl, cyclohexenyl, and cycloheptenyl groups. The carbon number of the unsaturated hydrocarbon group is preferably 2 to 18, more preferably 2 to 15, and even more preferably 2 to 10.

[0140] Examples of the aromatic hydrocarbon group having 6 to 20 carbon atoms include phenyl group, xylyl group, trimethylphenyl group, dipropylphenyl group, di(2,2-dimethylpropyl)phenyl group, naphthyl group, benzyl group, phenylethyl group, and phenylbutyl group. The number of carbon atoms in the aromatic hydrocarbon group is preferably 6 to 18, more preferably 6 to 15, and even more preferably 6 to 12.

[0141] R d1 , R d2 , R d3 , R d4 and R d5The hydrocarbon group represented by may have substituents such as halogen atoms, cyano groups, and nitro groups. The halogen atom is preferably a fluorine atom, a bromine atom, a chlorine atom, or an iodine atom.

[0142] The -CH2- contained in the hydrocarbon group may be replaced with -O-, -S-, -CO-, or -OCO-, and adjacent -CH2- will not be simultaneously substituted with the same type of group, nor will terminal -CH2- be substituted.

[0143] n represents an integer from 0 to 4, preferably an integer from 0 to 3, more preferably an integer from 0 to 2, even more preferably 0 or 1, and even more preferably 0.

[0144] *-OCO-R d4 The bond position of the group (* represents the bond with the phenyl group) is *-OCO-R d4 The group may be attached to the 2nd, 3rd, or 4th position of the phenyl group, but is preferably the 3rd or 4th position, and more preferably the 4th position.

[0145] R d1 The branched hydrocarbon group having 3 to 20 carbon atoms represented by is preferably a branched saturated hydrocarbon group having 3 to 20 carbon atoms, more preferably a branched alkyl group having 3 to 20 carbon atoms, even more preferably a branched alkyl group having 3 to 10 carbon atoms, and preferably one or more selected from the group consisting of 1-methylpentyl group, 2-methylpentyl group, 3-methylpentyl group, 1-ethylpentyl group, 2-ethylpentyl group, 3-ethylpentyl group, 1-methylhexyl group, 2-methylhexyl group, 3-methylhexyl group, 1-ethylhexyl group, 2-ethylhexyl group, 3-ethylhexyl group, 1-methylheptyl group, 2-methylheptyl group, 3-methylheptyl group, 1-ethylheptyl group, 2-ethylheptyl group, and 3-ethylheptyl group.

[0146] R d2 , R d3 , R d4 and R d5The hydrocarbon group having 1 to 20 carbon atoms represented by is preferably a saturated hydrocarbon group having 1 to 20 carbon atoms or an unsaturated hydrocarbon group having 2 to 20 carbon atoms, more preferably a saturated hydrocarbon group having 1 to 20 carbon atoms, still more preferably a linear saturated hydrocarbon group having 1 to 10 carbon atoms, and even more preferably a linear alkyl group having 1 to 8 carbon atoms. R d2 is preferably a linear alkyl group having 1 to 8 carbon atoms, and more preferably a linear alkyl group having 1 to 6 carbon atoms. R d3 is preferably a linear alkyl group having 1 to 8 carbon atoms, and more preferably a linear alkyl group having 1 to 3 carbon atoms. R d4 is preferably a linear alkyl group having 1 to 8 carbon atoms, and more preferably a linear alkyl group having 1 to 3 carbon atoms. R d5 is preferably a linear or branched alkyl group having 1 to 8 carbon atoms, and more preferably a linear or branched alkyl group having 1 to 6 carbon atoms.

[0147] When the composition contains a polymerization initiator (E), the content of the polymerization initiator (E) in the composition is, for example, 0.01% by mass or more and 20% by mass or less, preferably 0.1% by mass or more and 15% by mass or less, more preferably 0.2% by mass or more and 10% by mass or less, still more preferably 0.3% by mass or more and 8% by mass or less, even more preferably 0.5% by mass or more and 5% by mass or less, and particularly preferably 0.5% by mass or more and 3% by mass or less, relative to the total solid content of the composition. When the content of the polymerization initiator (E) falls within the above range, the process suitability of the composition and / or the residual film ratio of the cured film are more excellent.

[0148] The content ratio of the polymerization initiator (E) to the polymerizable compound (D) in the composition (polymerization initiator (E) / polymerizable compound (D)) is, on a mass basis, preferably 0.005 or more and 0.5 or less, more preferably 0.01 or more and 0.4 or less, still more preferably 0.03 or more and 0.30 or less, and even more preferably 0.05 or more and 0.25 or less. When the content of the polymerization initiator (E) falls within the above range, the process suitability of the composition and / or the residual film ratio of the cured film are more excellent.

[0149] <Antioxidant (F)> The composition may contain an antioxidant (F), and there are no particular limitations on the antioxidant (F) as long as it is an antioxidant commonly used in industry, such as phenolic antioxidants, phosphorus-based antioxidants, phosphorus / phenol complex antioxidants, and sulfur-based antioxidants. The composition may contain two or more antioxidants (F).

[0150] Examples of phosphorus / phenol complex antioxidants include Sumirizer® GP (6-[3-(3-tert-butyl-4-hydroxy-5-methylphenyl)propoxy]-2,4,8,10-tetra-tert-butyldibenz[d,f][1.3.2]dioxaphosfepine; manufactured by Sumitomo Chemical Co., Ltd.). Other antioxidants include, for example, those described in International Publication No. 2024 / 185881.

[0151] The antioxidant (F) preferably includes at least a phosphorus / phenol complex antioxidant.

[0152] If the composition contains an antioxidant (F), the content of the antioxidant (F) in the composition is preferably 0.01% by mass or more and 60% by mass or less, more preferably 0.1% by mass or more and 50% by mass or less, even more preferably 0.5% by mass or more and 40% by mass or less, even more preferably 0.8% by mass or more and 30% by mass or less, even more preferably 1.0% by mass or more and 20% by mass or less, and even more preferably 1.0% by mass or more and 10% by mass or less or 5% by mass or less, based on the total amount of solids in the composition.

[0153] If the composition contains an antioxidant (F), the amount of antioxidant (F) is, for example, 1 to 50 parts by mass, preferably 3 to 40 parts by mass, and more preferably 5 to 30 parts by mass, per 100 parts by mass of resin (C).

[0154] <Leveling agent (H)> The composition may contain a leveling agent (H), and may contain two or more types of leveling agents (H). Examples of leveling agents (H) include silicone surfactants, fluorine surfactants, and silicone surfactants having a fluorine atom, and these may have polymerizable groups in their side chains.

[0155] The leveling agent (H) preferably contains at least a silicone-based surfactant. Specifically, as the leveling agent (H), the leveling agent described in International Publication No. 2024 / 185881 can be used.

[0156] When the composition contains a leveling agent (H), the content of the leveling agent (H) in the composition is, for example, 0.001% by mass or more and 1.0% by mass or less, preferably 0.005% by mass or more and 0.75% by mass or less, more preferably 0.01% by mass or more and 0.5% by mass or less, and even more preferably 0.05% by mass or more and 0.5% by mass or less, relative to the total amount of solids in the composition. When the content of the leveling agent (H) is within the above range, the flatness of the cured film can be made better.

[0157] <Solvent (J)> The composition may contain solvent (J), or may contain two or more types of solvent (J). Solvent (J) can dissolve the resin (C), the polymerizable compound (D), and the polymerization initiator (E) used in the preferred embodiment. As solvent (J), solvents described in International Publication No. 2024 / 185881 can be used.

[0158] The solvent (J) preferably contains one or more selected from the group consisting of propylene glycol monomethyl ether acetate, ethyl lactate, propylene glycol monomethyl ether, cyclohexyl acetate, ethyl 3-ethoxypropionate, ethylene glycol monomethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, 4-hydroxy-4-methyl-2-pentanone, and aromatic hydrocarbon solvents.

[0159] Solvent (J) is a component other than the solid content, and for example, solvents contained in a dispersion of semiconductor particles (A), a solution of resin (C), and the like are also included in solvent (J).

[0160] When the composition contains solvent (J), the content of solvent (J) in the composition is the ratio of the total mass of all solvents contained in the composition to the total amount of the composition, and is, for example, 40% by mass or more and 95% by mass or less, preferably 50% by mass or more and 90% by mass or less, relative to the total amount of the composition. In other words, the solid content of the composition is, for example, 5% by mass or more and 60% by mass or less, preferably 10% by mass or more and 50% by mass or less. When the content of solvent (J) is within the above range, the flatness of the composition layer during coating becomes better, and a wavelength conversion layer with an appropriate thickness tends to be easily formed.

[0161] <Other Components> The composition may further contain additives known in the art, such as polymerization inhibitors, fillers, other polymer compounds, adhesion promoters, light stabilizers, and polymerization initiation assistants, if necessary.

[0162] <Value R Df / A > The composition according to the present invention has a value R represented by the following formula Df / A of less than 0.6. R Df / A = R Df / R A (wherein R A represents the content (mass) of the semiconductor particles (A) in the composition, and R Df represents the content (mass) of the polymerizable compound (Df), which is a polymerizable compound (D) not coordinated to the semiconductor particles (A) in the composition)

[0163] Value R Df / A is preferably 0.05 or more, more preferably 0.10 or more, still more preferably 0.13 or more, even more preferably 0.15 or more, still more preferably 0.16 or more, even more preferably more than 0.16, and is preferably 0.40 or less, more preferably 0.30 or less, still more preferably 0.25 or less, even more preferably 0.20 or less, still more preferably less than 0.20, even more preferably 0.19 or less, still even more preferably less than 0.19. Value R Df / AThis can also be adjusted, for example, by controlling the mixing process of the components in the composition manufacturing method described later. Df / A Because the lower limit is within the above range, the amount of components contributing to curing during cured film formation is appropriate (specifically, the polymerizable compound (Df) is not too little relative to the semiconductor particles (A)), so that curing proceeds sufficiently, process suitability and / or residual film rate can be improved. Also, the value R Df / A Because the upper limit is within the above range, the amount of components contributing to curing during cured film formation is appropriate (specifically, the polymerizable compound (Df) is not too much relative to the semiconductor particles (A)). As a result, defects such as the cured film peeling off the substrate due to an excessively fast development speed do not occur, allowing for good process suitability, and preferably, a better residual film rate can also be achieved.

[0164] In this specification, "good process suitability" means that the curing properties are sufficient, and the development time is appropriately controlled so that the development speed does not become too fast, making it suitable for industrial manufacturing processes. This can be evaluated, for example, by the method described in the examples below.

[0165] Content of semiconductor particles (A) in the composition (R A ) may be calculated from the amount blended during composition preparation, for example, by the following method, or by the method described in the examples. (Content of semiconductor particles (A) (R A(Measurement method) A composition containing semiconductor particles (A), resin (C), and polymerizable compound (D) is subjected to ultracentrifugation (10,000 rpm, 10 minutes) using an ultracentrifuge (e.g., Eppendorf HiMAC Technologies CS150FNX, small ultracentrifuge) to separate the supernatant containing semiconductor particles (A) (for example, separating from contained light scattering agents (B), etc., as necessary). The recovered supernatant is heated in a differential thermogravimetric analyzer (TG-DTA; for example, Hitachi High-Tech Corporation NEXTA STA200) under a nitrogen atmosphere at a heating rate of 20°C / min from 50°C to 100°C, held for 60 minutes, and then heated at a heating rate of 10°C / min from 100°C to 550°C, held for 5 minutes, and the weight change is measured. The weight remaining after heating from 50°C to 550°C is defined as the content (mass) of semiconductor particles (A).

[0166] The content of polymerizable compound (Df), which is a polymerizable compound (D) that is not coordinated to semiconductor particles (A) in the composition (R Df ) may be measured by the following method, or calculated by the method described in the examples. (Content of polymerizable compound (Df) (R Df(Measurement method) A composition containing semiconductor particles (A), resin (C), and polymerizable compound (D) is subjected to ultracentrifugation (86,000 rpm, 3 hours) using an ultracentrifuge (e.g., Eppendorf HiMAC Technologies CS150FNX, small ultracentrifuge) to separate the supernatant containing semiconductor particles (A) (for example, separating from contained light scattering agents (B), etc., as necessary). The recovered supernatant is further ultracentrifugated under the same conditions and this process is repeated until the supernatant does not contain semiconductor particles (A), thereby separating the supernatant (sample) that does not contain semiconductor particles (A) but contains polymerizable compound (Df). The absence of semiconductor particles (A) in the supernatant means that the supernatant is measured using a quantum yield analyzer (for example, an absolute PL quantum yield analyzer C9920-02G manufactured by Hamamatsu Photonics K.K.), and the concentration of semiconductor particles (A) in the supernatant, calculated by the calibration curve method based on JIS K 0115 (2020), is 100 ppm or less. This can also be confirmed by irradiating the supernatant with UV light and ensuring that no emission is observed. Using the above sample, the polymerizable compound is measured by high-performance liquid chromatography (reverse-phase partition chromatography) based on JIS K 0124 (2011), and the polymerizable compound is quantified using the area percentage method or the internal standard method, with the quantified value considered as the content (mass) of the polymerizable compound (Df). In this case, the peak area can be calculated based on the perpendicular method in the same standard, and the internal standard substance should be appropriately selected according to the type of polymerizable compound (Df). Furthermore, if there are multiple polymerizable compounds (Df), their combined value shall be considered as the content (mass) of polymerizable compounds (Df).

[0167] The content of the polymerizable compound (Df) in the composition is preferably 0.7% to 40% by mass, more preferably 1.0% to 35% by mass, even more preferably 1.3% to 30% by mass, even more preferably 1.6% to 25% by mass, even more preferably 2.0% to 22% by mass, and even more preferably 2.5% to 20% by mass, relative to the total amount of solids in the composition. The polymerizable compound (Df) includes a polymerizable compound (Da) that is not coordinated to the semiconductor particles (A) and / or polymerizable compound (Db) which may be included as needed.

[0168] From the viewpoint of improving the process suitability of the composition and / or the residual film rate during development, it is preferable that 10% to 80% by mass of the total amount of polymerizable compound (Da) contained in the composition is coordinated to the semiconductor particles (A), more preferably 20% to 70% by mass, even more preferably 30% to 60% by mass, and even more preferably 40% to 60% by mass. The reason why the above effects are obtained is not necessarily clear, but the inventors speculate as follows: That is, when the amount of polymerizable compound (Da) coordinated to the semiconductor particles (A) in the total amount of polymerizable compound (Da) is within the above range, the balance between the amount of polymerizable compound (Da) not coordinated to the semiconductor particles (A) and the amount of polymerizable compound (Da) coordinated to the semiconductor particles (A) in the composition becomes good. If the balance is good, the polymerizable compound (Da) that is not coordinated to the semiconductor particles (A) contributes to the progress of the curing reaction (polymerization reaction) in the formation of the cured film, while suppressing excessive curing, resulting in good resistance of the cured film to the developer. Furthermore, from the viewpoint of improving the process suitability of the composition and / or the residual film rate during development, it is preferable that the composition contains 1 to 40 parts by mass of polymerizable compound (Da) per 100 parts by mass of semiconductor particles (A), more preferably 2 to 30 parts by mass, even more preferably 3 to 20 parts by mass, even more preferably 3.5 to 15 parts by mass, and even more preferably 4.0 to 10 parts by mass. The content of polymerizable compound (Da) coordinated to the semiconductor particles (A) may be calculated, for example, from the measured value of the polymerizable compound (Df) content and the blending amount described above.

[0169] <Method for Producing the Composition> The composition according to the present invention preferably contains, as necessary, at least one selected from the group consisting of a light scattering agent (B), a polymerization initiator (E), an antioxidant (F), an organic ligand (G), a leveling agent (H), and a solvent (J). The composition can be produced by a method that includes a step of mixing a predetermined component and other components used as necessary.

[0170] While the mixing order of each component is not particularly limited, adding a compound with coordinating groups (functional groups exhibiting coordinating ability) or an acid value (e.g., resin (C)) first makes it easier to control the amount of polymerizable compound (Da) adsorbed onto the semiconductor particles (A) due to the effect of steric hindrance. Furthermore, adding a polymerizable compound (Db) that does not have coordinating groups changes the solubility in the composition, allowing for control of the amount of polymerizable compound (Da) adsorbed onto the semiconductor particles (A). Therefore, it is preferable to start mixing the semiconductor particles (A) with the resin (C) and / or polymerizable compound (Db) before or at the start of mixing the semiconductor particles (A) with the polymerizable compound (Da), and more preferable to start mixing the semiconductor particles (A) with the resin (C) before or at the start of mixing the semiconductor particles (A) with the polymerizable compound (Da). Also, from the viewpoint of ease of controlling the amount of polymerizable compound (Da) adsorbed onto the semiconductor particles (A), it is more preferable to add the resin (C) and polymerizable compound (Db) at separate stages. The mixing of the semiconductor particles (A) and the resin (C) and / or polymerizable compound (Db) may be completed before the start of mixing of the semiconductor particles (A) and the polymerizable compound (Da), or it may be completed after the start of mixing of the semiconductor particles (A) and the polymerizable compound (Da) and simultaneously with or before the completion of said mixing.

[0171] If the composition contains an organic ligand (G), semiconductor particles (A) in which the organic ligand (G) is coordinated (i.e., coordination-type semiconductor particles (AG)) may be used as a raw material. Alternatively, coordination-type semiconductor particles (AG) may be prepared by preparing or creating semiconductor particles (A) to which the organic ligand (G) is coordinated, and then subjecting them to a ligand reduction treatment to reduce the amount of coordination of the organic ligand (G) to the semiconductor particles (A). The ligand reduction treatment can be a treatment in which the organic ligand (G) coordinated to the semiconductor particles (A) is extracted into a suitable solvent.

[0172] It is preferable to mix the light scattering agent (B), polymerization initiator (E), antioxidant (F), leveling agent (H), etc., which may be added as needed, into a dispersion containing at least semiconductor particles (A), resin (C), and polymerizable compound (Da). Mixing the polymerization initiator (E) into the dispersion improves the solubility of the polymerization initiator (E) in the composition, thereby increasing the uniformity of the composition during cured film formation. As a result, the dissolution rate of the unexposed areas into the developer can be kept constant, making it easier to improve the residual film rate of the cured film, which is preferable. It is preferable to mix the light scattering agent (B) after mixing the other components. Mixing the light scattering agent (B) after mixing the other components improves the dispersibility of the light scattering agent (B) in the composition, thereby increasing the uniformity of the composition during cured film formation. As a result, the dissolution rate of the unexposed areas into the developer can be kept constant, making it easier to improve the residual film rate of the cured film, which is preferable.

[0173] Among the components of the composition, the semiconductor particles (A) and the light scattering agent (B) may be mixed with part or all of the solvent (J) beforehand before being mixed with the other components. The method for producing the composition may further include a step of preparing a resin (C).

[0174] When the polymerizable compound (D) includes both polymerizable compound (Da) and polymerizable compound (Db), and the mixing of semiconductor particles (A) and resin (C) is started before or at the start of mixing of semiconductor particles (A) and polymerizable compound (Da), it is preferable that the mixing of semiconductor particles (A) and polymerizable compound (Da) is performed before the mixing of semiconductor particles (A) and polymerizable compound (Db). By performing the mixing of semiconductor particles (A) and polymerizable compound (Da) before the mixing of semiconductor particles (A) and polymerizable compound (Db), it is easier to appropriately control the coordination amount of polymerizable compound (Da) to semiconductor particles (A), and process suitability tends to be good. It is preferable that the polymerizable compound (Db) is mixed with semiconductor particles (A) before any light scattering agent (B), polymerization initiator (E), antioxidant (F), and leveling agent (H) that may be added as needed. By mixing the polymerizable compound (Db) before these components, the mixing stability of each component added later in the composition is improved, and the uniformity of the composition during cured film formation can be enhanced.

[0175] The mixing temperature of each component is usually 20°C or higher from the viewpoint of uniformly mixing the composition. Furthermore, from the viewpoint of suppressing the decomposition of each component and excessive polymerization reactions, it is preferable that it be 80°C or lower. In particular, the value R Df / A From the viewpoint of controlling the mixture within an appropriate range and obtaining a good residual film rate, the mixing temperature of each component is preferably 60°C or lower, and more preferably 40°C or lower.

[0176] <Cured Film> The present invention includes a cured film formed from the composition. A cured film containing semiconductor particles (A) can emit light of a different wavelength from the irradiated light when irradiated with ultraviolet light or visible light. Therefore, a cured film containing semiconductor particles (A) can be used as a wavelength conversion film.

[0177] The thickness of the cured film is, for example, 0.5 μm or more and 15 μm or less, preferably 1 μm or more and 10 μm or less, more preferably 1.5 μm or more and 7 μm or less, and even more preferably 2 μm or more and 5 μm or less.

[0178] <Method for Manufacturing a Cured Film> A cured film can be obtained by curing a film (layer) made of a composition. For example, a cured film can be manufactured by a manufacturing method that includes the steps of forming a composition layer by coating the composition onto a substrate or by discharging the composition into a region partitioned by a bank on a substrate in which a bank has been formed, and heat-treating the composition layer (hereinafter also referred to as the "thermosetting step"). The composition used to form the cured film includes semiconductor particles (A), a resin (C), and a polymerizable compound (D), and examples of such compositions are those described in the <Composition> section above.

[0179] The method for manufacturing a cured film may include other steps besides those described above. Other steps include, for example, a drying step for drying the composition layer formed by coating or extrusion, an exposure step for irradiating the composition layer with light, and a developing step performed on the composition layer after the exposure step. The method for manufacturing a cured film preferably includes an exposure step.

[0180] The cured film may be formed over the entire substrate surface or on a portion of the substrate surface (for example, in a pattern). A patterned cured film (hereinafter also referred to as "cured pattern") can be obtained, for example, by a manufacturing method that includes a step of forming a patterned composition layer by coating the composition onto the substrate via a mask or by ejecting the composition into a region demarcated by a bank, or an exposure step of exposing the composition layer via a photomask.

[0181] In the process of forming a composition layer, methods for applying the composition to a substrate include spin coating, slit coating, and slit and spin coating. The process of forming a composition layer by ejecting the composition may be a process of selectively ejecting and adhering the composition to areas partitioned by banks, for example, by an inkjet method. Alternatively, a patterned composition layer may be formed by stencil printing, screen printing, or printing and coating with an applicator. When the composition is used as an inkjet ink, it is preferable that the resin (C) content of the composition is low. When the composition is used as an inkjet ink, the resin (C) content is preferably 10% by mass or less, more preferably 5% by mass or less, relative to the total amount of solids in the composition. By reducing the resin (C) content, the viscosity of the composition can be reduced, and consequently, the ejectability, especially the ejectability when ejected from the ejection head of an inkjet printer, can be improved.

[0182] Examples of substrates include glass plates such as quartz glass, borosilicate glass, aluminasilate glass, and soda-lime glass with a silica coating on the surface; resin plates such as polycarbonate, polymethyl methacrylate, and polyethylene terephthalate; silicon; and substrates on which aluminum, silver, or silver / copper / palladium alloy thin films are formed. Preferred substrates are glass plates and silicone substrates.

[0183] The substrate may be pre-treated to adjust the wettability of the substrate surface. Examples of pre-treatment include solvent cleaning with alcohol or acetone, acid treatment, alkali treatment, plasma treatment, and corona treatment. By selecting an appropriate pre-treatment for the substrate on which the cured film is to be laminated, the coatability of the composition can be improved compared to an untreated substrate.

[0184] If the composition contains a solvent (J), it is preferable to perform a drying step to remove volatile components such as the solvent (J) from the composition layer after coating or dispensing the composition. The drying step may include a heat drying (pre-bake) treatment, a vacuum drying treatment, or both. When heat drying is performed, the heating temperature is preferably 30°C to 130°C, and more preferably 50°C to 120°C. The heating time is preferably 10 seconds to 60 minutes, and more preferably 30 seconds to 30 minutes. When vacuum drying is performed, it is preferable to perform it under a pressure of 50 Pa to 150 Pa and at a temperature range of 20°C to 25°C. Drying of the composition layer may be performed in multiple stages, for example, by performing multiple drying steps with different drying temperatures.

[0185] Since the composition contains a polymerizable compound (D) and is curable, it is preferable to include the above exposure step. The exposed composition layer hardens by polymerization of the polymerizable compound (D), etc., contained in the composition layer, including in preferred embodiments. As the light source used for exposure, a light source that generates light with a wavelength of 250 nm to 450 nm is preferred. If the composition contains a polymerization initiator (E) (especially a photopolymerization initiator), light around 436 nm, 408 nm, or 365 nm may be selectively extracted from the above wavelengths of light using a bandpass filter, depending on the absorption wavelength of the polymerization initiator (E). Specific examples of light sources include mercury lamps, light-emitting diodes, metal halide lamps, halogen lamps, etc. Exposure may be carried out in an atmospheric environment or in an inert gas (nitrogen, argon, etc.) atmosphere, but is preferred. The exposure amount in the exposure step is preferably 50 to 1000 mJ / cm². 2 More preferably, 80 to 800 mJ / cm² 2 And more preferably 100 to 700 mJ / cm² 2 And more preferably 150 to 700 mJ / cm² 2 The exposure amount in the exposure process is 1000 mJ / cm². 2The following conditions prevent excessive shrinkage of the cured film, thereby preventing the semiconductor particles (A) from coming into close proximity within the film due to shrinkage and preventing a decrease in emitted light intensity. Furthermore, if the lower limit of the exposure amount in the exposure process is within the above range, the process suitability will be even better. The exposure amount is the exposure amount based on a wavelength of 365 nm and can be measured using an ultraviolet integrated light meter (UIT-250, manufactured by Ushio Inc.).

[0186] One example of a method for forming a cured pattern, which is a form of a cured film, is photolithography. Photolithography is a method of exposing a composition layer through a photomask for forming the desired cured pattern and then developing it. In this case, it is preferable to use an exposure apparatus such as a mask aligner and a stepper, as this allows for uniform irradiation of the entire exposure surface with parallel light and enables precise alignment between the photomask and the substrate on which the composition layer is formed.

[0187] By subjecting the composition layer after the exposure process to a developing process in which it is brought into contact with a developer, the unexposed parts of the composition layer are dissolved and removed in the developer, thereby imparting a pattern to the composition layer. Examples of the developer include aqueous solutions of alkaline compounds such as potassium hydroxide, sodium bicarbonate, sodium carbonate, and tetramethylammonium hydroxide, or organic solvents. The concentration of the alkaline compound in the aqueous solution is preferably 0.01% by mass or more and 10% by mass or less, more preferably 0.03% by mass or more and 5% by mass or less. Examples of organic solvents include those similar to solvent (J) described above. The developer may also contain a surfactant. The developing method may be any of the following: the paddle method, the dipping method, or the spray method. Furthermore, the substrate may be tilted at any angle during development.

[0188] The composition layer after the exposure or development process is thermocured (post-bake) in a thermocuring process. The thermocuring process allows for further polymerization of resins (C), polymerizable compounds (D), etc., including preferred embodiments, and improves solvent resistance compared to before post-bake. The heating temperature in post-bake is preferably 150°C to 250°C, more preferably 160°C to 235°C, and the heating time is preferably 1 minute to 120 minutes, more preferably 10 minutes to 60 minutes. By heating after development, polymerization of unreacted polymerizable compounds (D), etc., contained in the curing pattern can be advanced, thereby allowing for a more appropriate hardness of the cured film. Even if development is not performed, it is preferable to further heat (post-bake) the exposed composition layer. The thermocuring process may be carried out in an atmospheric atmosphere, a vacuum atmosphere, or an inert gas atmosphere. A vacuum atmosphere refers to a pressure range of 150 Pa or less, preferably 120 Pa or less, more preferably 100 Pa or less, and may be 50 Pa or more.

[0189] On the other hand, a method for forming a cured film over the entire surface of a substrate includes forming a composition layer on the substrate, drying it as necessary, and then heating the composition layer or exposing the entire composition layer to light before heating.

[0190] The cured film according to the present invention comprises semiconductor particles (A), a resin (C), and a polymerizable compound (D), wherein the polymerizable compound (D) contains a polymerizable compound (Da) having a functional group exhibiting coordination ability, and a specific value R Df / A Since it is formed from a composition in which is less than 0.6, the process suitability during formation is good, and preferably the residual film rate of the cured film is excellent.

[0191] The cured film according to the present invention preferably has a development time of 3.0 sec / μm or more per unit thickness (1 μm), and particularly preferably more than 3.5 sec / μm. Specifically, when the composition is applied to a substrate by spin coating to a thickness of 2 μm, and then dried (pre-baked) at 90°C for 2 minutes to form a composition layer, and the obtained composition layer is immersed in a developer solution consisting of a 0.05% by mass aqueous solution of tetramethylammonium hydroxide, it is preferable that the time required per unit thickness (1 μm) for the composition layer to dissolve in the developer solution is within the above range.

[0192] The cured film according to the present invention preferably has a residual film rate of 90% or more, and particularly preferably more than 95%, after development of a cured film with a thickness of 2 μm. Specifically, the process includes forming a composition layer by a drying step in which the composition is applied to a substrate by a spin coating method so that the thickness after post-baking is 2 μm, followed by drying at 100°C for 3 minutes (pre-baking), and then applying 200 mJ / cm² to the composition layer. 2 It is preferable that the residual film rate (= 100 × (film thickness of the developed film) / (film thickness of the exposed film)) is within the above range when comparing a developed film manufactured by a manufacturing method that includes an exposure step of irradiating with light at an exposure dose (based on 365 nm), a developing step of immersing in a developer solution consisting of 0.05% by mass of tetramethylammonium hydroxide aqueous solution at 25°C for 30 seconds after the exposure step, and a thermosetting step of heat treatment at 180°C for 30 minutes after the development step with an exposed film manufactured in the same manner as the developed film except that the development step is not performed.

[0193] <Display Device> The present invention includes a display device that includes a cured film. Since the cured film has the function of converting the wavelength of irradiated light, it can be used as a color conversion layer (wavelength conversion film) for a display device. Examples of such display devices include those described in Japanese Patent Publication No. 2006-309219, Japanese Patent Publication No. 2006-310303, Japanese Patent Publication No. 2013-15812, Japanese Patent Publication No. 2009-251129, Japanese Patent Publication No. 2014-2363, etc. The cured film according to the present invention is useful as a display device, in particular as a color conversion layer (wavelength conversion film) for liquid crystal display devices, organic EL display devices, or inorganic EL display devices.

[0194] The present invention will be described in more detail below with reference to examples, but the present invention is not limited to the following examples, and it is certainly possible to implement it with appropriate modifications within the scope that is consistent with the spirit described above and below, and all such modifications are included within the technical scope of the present invention. In the following, unless otherwise specified, "parts" means "parts by mass" and "%" means "percent mass".

[0195] <Measurement and Evaluation> Measurements or evaluations in the examples and comparative examples were performed by the methods described below.

[0196] [Solid Content] Approximately 1 g of resin (C) solution was weighed into an aluminum cup, dried at 180°C for 1 hour, and then its mass was measured. The solid content (mass %) of resin (C) solution was calculated from the amount of mass loss.

[0197] [Weight-average molecular weight] The weight-average molecular weight (Mw) of resin (C) was measured by the GPC method under the following conditions: Apparatus: K2479 (Shimadzu Corporation) Column: SHIMADZU Shim-pack GPC-80M Column temperature: 40°C Solvent: Tetrahydrofuran Flow rate: 1.0 mL / min Detector: RI Calibration standards: TSK STANDARD POLYSTYRENE F-40, F-4, F-288, A-2500, A-500 (Tosoh Corporation)

[0198] [Acid Value] 3 g of resin (C) solution was accurately weighed and dissolved in a mixed solvent of 90 g of acetone and 10 g of water. Using a 0.1 N KOH aqueous solution as the titrant, the acid value of resin (C) solution was measured using an automatic titrator (manufactured by Hiranuma Sangyo Co., Ltd., product name: COM-555). The acid value per gram of solids was determined from the acid value of the solution and the solids content of the solution.

[0199] [Double Bond Equivalent] The double bond equivalent of resin (C) was determined by dividing the total mass of resin (C) by the number of moles of radically polymerizable double bonds introduced into resin (C).

[0200] [Content of polymerizable compound (Df) (R DfThe content of polymerizable compound (Df) in the composition was determined by separating the sample from which semiconductor particles (A) had been removed using an HPLC system by high-performance liquid chromatography (reverse-phase partition chromatography) and then using the internal standard method. The details are as follows: (Preparation of internal standard solution) 10 mg of 1,3,5-triphenylbenzene was weighed out and diluted to a volume of acetonitrile in a 200 mL volumetric flask to obtain the internal standard solution (hereinafter also referred to as "IS solution"). (Preparation of standard solution) 50 mg of monomer standard was weighed out and diluted to a volume of acetonitrile in a 50 mL volumetric flask. 5 mL of this solution was measured out into a 20 mL screw bottle using a 5 mL volumetric pipette, and 5 mL of IS solution was added to it using a 5 mL volumetric pipette and mixed to obtain the standard solution. Standard solutions were prepared with N=2. (Preparation of Sample Measurement Solution) The composition was subjected to ultracentrifugation (86,000 rpm, 3 hours) using an ultracentrifuge (Eppendorf Hi-Mac Technologies, compact ultracentrifuge CS150FNX), and the supernatant was collected seven times to obtain a sample free of semiconductor particles (A). The absence of semiconductor particles (A) in the sample was confirmed by irradiating it with a UV light (Nichia Corporation, UV-LED375-01SB) and observing that no light emission was observed. 50 mg of the sample was weighed into a 20 mL screw-top bottle, and 2 mL of IS solution was added using a 2 mL volumetric pipette and thoroughly mixed to obtain the sample measurement solution. The solution was prepared with N=2. (HPLC measurement conditions) HPLC instrument: Agilent Technologies LC-1260 HPLC column: L column 2 ODS (manufactured by the Chemicals Evaluation and Research Institute, 3.0 mmΦ × 150 mm, particle size 3.0 μm) Column temperature: 40°C Mobile phase A: Water (containing 0.1% trifluoroacetic acid) Mobile phase B: Acetonitrile (containing 0.1% trifluoroacetic acid) Gradient conditions: The ratio of mobile phase B was maintained at 5 vol% for 5 minutes, then increased to 100 vol% over 30 minutes and held for 10 minutes. Mobile phase flow rate: 0.5 mL / min Measurement solution injection volume: 5 μL Detector: UV (wavelength 220 nm) (Calculation of peak area value) The value obtained based on the perpendicular method described in JIS K 0124 (2011) was taken as the peak area value.(Content of polymerizable compound (Df) (R. Df Calculation of Factor) The peak area values ​​of the monomer standard and internal standard substance were calculated using LC chromatograms of the standard solution, and the factor value was calculated from the following formula: Factor = (Amount of monomer standard added (mg) × Peak area value of internal standard substance) / (Amount of internal standard substance added (mg) × Peak area value of monomer standard substance) Next, the peak area values ​​of the polymerizable compound (Df) and internal standard substance were calculated using LC chromatograms of the sample measurement solution, and the content (wt%) of the polymerizable compound (Df) was calculated from the following formula using the factor value calculated above. In this case, the average value of the values ​​evaluated with N=2 was taken as the polymerizable compound (Df) content (wt%). Polymerizable compound (Df) content (wt%) = 100 × factor × (amount of internal standard substance added (mg) × peak area value of polymerizable compound (Df)) / (sample weighing value (mg) × peak area value of internal standard substance) From the calculated polymerizable compound (Df) content (wt%) and the weight of the composition, the polymerizable compound (Df) content (R Df The mass was calculated.

[0201] [Content of semiconductor particles (A) (R A The composition was subjected to ultracentrifugation (10,000 rpm, 10 minutes) using an ultracentrifuge (Eppendorf Hi-Mac Technologies, compact ultracentrifuge CS150FNX), and the supernatant liquid from which the light scattering agent (B) had been removed was collected with a pipette. The collected supernatant liquid was measured using a TG-DTA (Hitachi High-Tech Corporation, differential thermogravimetric analyzer NEXTA STA200) under the following conditions. (Measurement conditions) Under a nitrogen atmosphere, the temperature was raised from 50°C to 100°C at a heating rate of 20°C / min, held for 60 minutes, and then raised from 100°C to 550°C at a heating rate of 10°C / min, held for 5 minutes, and the weight change was measured. The weight remaining after raising the temperature from 50°C to 550°C was used to determine the content of semiconductor particles (A) (R A (Mass) was assumed.

[0202] [Evaluation of Residual Film Rate] A developing film was prepared using the composition according to the following procedure. The composition was applied to a 5 cm square glass substrate (Eagle 2000; Corning Corporation) by spin coating to a thickness of 2 μm, and then pre-baked at 90°C for 3 minutes to form a composition layer. The substrate on which this composition layer was formed was exposed to an exposure chamber (TME-150RSK; Topcon Corporation) under an atmospheric atmosphere at 200 mJ / cm². 2 After irradiation with light at an exposure level (based on 365 nm), development was performed by immersion in a developer solution consisting of a 0.05% TMAH (tetramethylammonium hydroxide) aqueous solution at 25°C for 30 seconds, followed by post-baking at 180°C for 30 minutes to obtain a substrate with a cured film, which was used as the developed film. The exposed film was obtained by performing the above procedure except for the development step. The film thickness of the obtained developed film and exposed film was measured by measuring the step height of scratches made on the surface of the film using a stylus-type step meter (DektakXT, manufactured by Bluker). The residual film percentage (%) was calculated using the following formula and evaluated according to the following criteria: Residual film percentage (%) = 100 × (film thickness of developed film) / (film thickness of exposed film) A (Excellent): Residual film percentage greater than 95% B (Good): Residual film percentage between 90% and 95% C (Poor): Residual film percentage less than 90%

[0203] [Process Suitability Evaluation] The composition was applied to a 5 cm square glass substrate (Eagle 2000; Corning) by spin coating to a thickness of 2 μm, and then pre-baked at 90°C for 2 minutes to form a composition layer. The obtained composition layer was immersed in a developer solution consisting of a 0.05% TMAH aqueous solution, and the time required for the unexposed film to dissolve in the developer solution was measured. The time required for dissolution per unit thickness (1 μm) of the unexposed film (hereinafter also referred to as "development time") was calculated from the following formula. The dissolution of the unexposed film was confirmed visually. Development time (sec / μm) = Time required for an unexposed film with a thickness of 2 μm to dissolve in the developer solution (sec) / Film thickness (2 μm) Process suitability was evaluated according to the following criteria. A (Good): Development time greater than 3.5 sec / μm B (Acceptable): Development time between 3.0 and 3.5 sec / μm C (Unacceptable): Development time less than 3.0 sec / μm or poor dissolution (poor development)

[0204] (Preparation Example 1: Dispersion of Coordination-Type Semiconductor Particles (AG1)) A toluene dispersion of coordination-type semiconductor particles (AG1) was prepared, in which oleic acid as an organic ligand (G1) was coordinated to an InP / ZnSeS quantum dot (core: InP, shell: ZnSeS) as a semiconductor particle (A1). After removing toluene from this dispersion by vacuum distillation, 70 parts of cyclohexyl acetate were added to 30 parts of solid content to obtain a dispersion of coordination-type semiconductor particles (AG1) (30% solid content).

[0205] (Preparation Example 2: Dispersion of Light Scattering Agent (B1)) 70 parts of titanium dioxide nanoparticles were mixed with 3 parts of BYK-LPN21116 (manufactured by Bic Chemie Japan Co., Ltd.) in solid content, and propylene glycol monomethyl ether acetate (hereinafter also referred to as "PGMEA") in total volume of 100 parts. The mixture was then stirred in a paint shaker until it was thoroughly dispersed to obtain a dispersion of light scattering agent (B1) (solid content 73%).

[0206] (Preparation Example 3: Resin (C1) Solution) 276.8 parts of PGMEA were placed in a flask equipped with a stirrer, dropping funnel, condenser, thermometer, and gas inlet tube, and stirred while purging with nitrogen, and the temperature was raised to 120°C. Next, a monomer mixture consisting of 92.4 parts of 2-ethylhexyl acrylate, 184.9 parts of glycidyl methacrylate, and 12.3 parts of dicyclopentanyl methacrylate was mixed with 35.3 parts of t-butyl peroxy-2-ethylhexanoate (polymerization initiator), and this mixture was added dropwise to the flask from the dropping funnel over a period of 2 hours. After the addition was complete, the mixture was stirred at 120°C for a further 30 minutes to carry out the copolymerization reaction and produce an addition copolymer. Subsequently, the flask was purged with air, and 93.7 parts of acrylic acid, 1.5 parts of triphenylphosphine (catalyst), and 0.8 parts of methoquinone (polymerization inhibitor) were added to the above addition copolymer solution. The reaction was continued at 110°C for 10 hours, during which the epoxy groups derived from glycidyl methacrylate reacted with acrylic acid to cleave the epoxy groups and simultaneously introduce polymerizable unsaturated bonds into the side chains of the polymer. Next, 24.2 parts of succinic anhydride were added to the reaction system, and the reaction was continued at 110°C for 1 hour, during which the hydroxyl groups generated by the cleavage of the epoxy groups reacted with succinic anhydride to introduce carboxyl groups into the side chains, thereby obtaining a polymer (resin (C1)). Finally, 383.3 parts of PGMEA were added to the reaction solution to obtain a resin (C1) solution with a polymer solids content of 40%. The resin (C1) had the following structural units, a weight-average molecular weight of 6200 on a standard polystyrene basis, an acid value of 35 mgKOH / g, and a double bond equivalent of 313 g / eq.

[0207]

[0208] (Preparation Example 4: Resin (C2) Solution) Polymer (Resin (C2)) was obtained in the same manner as for Resin (C1), except that the amount of t-butylperoxy-2-ethylhexanoate (polymerization initiator) used was changed from 35.3 parts to 28.2 parts. Finally, PGMEA was added to the reaction solution to obtain a Resin (C2) solution with a polymer solids content of 40%. Resin (C2) had a weight-average molecular weight of 4960 on a standard polystyrene basis, an acid value of 37 mgKOH / g, and a double bond equivalent of 344 g / eq.

[0209] (Preparation Example 5: Resin (C3) Solution) Polymer (Resin (C3)) was obtained in the same manner as for Resin (C1), except that the amount of acrylic acid used was changed from 93.7 parts to 140 parts. Finally, PGMEA was added to the reaction solution to obtain a Resin (C3) solution with a polymer solids content of 40%. Resin (C3) had a weight-average molecular weight of 4910 on a standard polystyrene basis, an acid value of 42 mgKOH / g, and a double bond equivalent of 514 g / eq.

[0210] (Example 1: Preparation of Composition 1) A dispersion of coordination semiconductor particles (AG1) obtained in Preparation Example 1 was mixed with the resin (C1) solution obtained in Preparation Example 3. Then, a carboxyl group-containing polyfunctional (meth)acrylate (Aronics® M-510; manufactured by Toagosei Co., Ltd.) (hereinafter also referred to as polymerizable compound (Da1)) was added and mixed. After that, ethylene oxide-modified bisphenol A diacrylate (hereinafter also referred to as polymerizable compound (Db2)) was added and mixed. Subsequently, the polymerization initiator (E), antioxidant (F), leveling agent (H), and solvent (J) shown in Table 1 were added and mixed. Finally, a light scattering agent (B) was added and mixed to prepare Composition 1 having the composition shown in Table 1. All mixing operations at each step were performed at room temperature (25°C). In Table 1, the amounts of components other than solvent (J) are shown as solid content. The value R of the polymerizable compound (Df) content relative to the semiconductor particle (A) content in composition 1. Df / A The results of the evaluation of residual film percentage and process suitability are shown in Table 1.

[0211] (Example 2: Preparation of Composition 2) To the dispersion of coordination semiconductor particles (AG1) obtained in Preparation Example 1, the resin (C1) solution obtained in Preparation Example 3 and the polymerizable compound (Da1) were added and mixed. Then, the polymerizable compound (Db2) was added and mixed. Subsequently, the polymerization initiator (E), antioxidant (F), leveling agent (H), and solvent (J) shown in Table 1 were added and mixed. Finally, the light scattering agent (B) was added and mixed to prepare Composition 2 having the composition shown in Table 1. All mixing operations at each stage were performed at room temperature (25°C). In Table 1, the amounts of components other than solvent (J) are shown as solid content. R is the value of the polymerizable compound (Df) content relative to the semiconductor particle (A) content in Composition 2.Df / A The results of the evaluation of residual film percentage and process suitability are shown in Table 1.

[0212] (Example 3: Preparation of Composition 3) A polymerizable compound (Db2) was added to a dispersion of coordination-type semiconductor particles (AG1) obtained in Preparation Example 1 and mixed, then a polymerizable compound (Da1) was added and mixed, and then the resin (C1) solution obtained in Preparation Example 3 was added and mixed. After that, the polymerization initiator (E), antioxidant (F), leveling agent (H), and solvent (J) shown in Table 1 were added and mixed, and then the light scattering agent (B) was added and mixed to prepare Composition 3 having the composition shown in Table 1. All mixing operations at each step were performed at room temperature (25°C). In Table 1, the amounts of components other than solvent (J) are shown as solid content. R is the value of the polymerizable compound (Df) content relative to the semiconductor particle (A) content in Composition 3. Df / A The results of the evaluation of residual film percentage and process suitability are shown in Table 1.

[0213] (Example 4: Preparation of Composition 4) To the dispersion of coordination semiconductor particles (AG1) obtained in Preparation Example 1, the resin (C1) solution obtained in Preparation Example 3 and the polymerizable compound (Da1) were added and mixed. Then, the polymerizable compound (Db2) was added and mixed. Subsequently, the polymerization initiator (E), antioxidant (F), leveling agent (H), and solvent (J) shown in Table 1 were added and mixed. Finally, the light scattering agent (B) was added and mixed to prepare Composition 4 having the composition shown in Table 1. All mixing operations at each stage were performed under heating at 60°C. In Table 1, the amounts of components other than solvent (J) are shown as solid content. R is the value of the polymerizable compound (Df) content relative to the semiconductor particle (A) content in Composition 4. Df / A The results of the evaluation of residual film percentage and process suitability are shown in Table 1.

[0214] (Comparative Example 1: Preparation of Composition 5) A polymerizable compound (Da1) was added to a dispersion of coordination-type semiconductor particles (AG1) obtained in Preparation Example 1 and mixed. Then, the polymerization initiator (E), antioxidant (F), leveling agent (H), and solvent (J) shown in Table 1 were added and mixed. Finally, a light scattering agent (B) was added and mixed to prepare Composition 5 having the composition shown in Table 1. All mixing operations at each step were performed at room temperature (25°C). In Table 1, the amounts of components other than the solvent (J) are shown as solid content. R is the value of the polymerizable compound (Df) content relative to the semiconductor particle (A) content in Composition 5. Df / A The results of the evaluation of residual film percentage and process suitability are shown in Table 1.

[0215] (Comparative Example 2: Preparation of Composition 6) Trimethylolpropane triacrylate (hereinafter also referred to as polymerizable compound (Db1)) was added to the dispersion of coordination-type semiconductor particles (AG1) obtained in Preparation Example 1 and mixed, and then the resin (C1) solution obtained in Preparation Example 3 was added and mixed. After that, the polymerization initiator (E), antioxidant (F), leveling agent (H), and solvent (J) shown in Table 1 were added and mixed, and then the light scattering agent (B) was added and mixed to prepare composition 6 having the composition shown in Table 1. All mixing operations at each stage were performed at room temperature (25°C). In Table 1, the amounts of components other than solvent (J) are shown as solid content equivalents. The results of the evaluation of residual film rate and process suitability for composition 6 are shown in Table 1. In composition 6, since only polymerizable compound (Db) that does not have a functional group exhibiting coordination ability is used as the polymerizable compound (D), the value of polymerizable compound (Df) content relative to semiconductor particle (A) content is large.

[0216] (Comparative Example 3: Preparation of Composition 7) A polymerizable compound (Da1) was added to a dispersion of coordination-type semiconductor particles (AG1) obtained in Preparation Example 1 and mixed. Then, the resin (C2) solution obtained in Preparation Example 4 was added and mixed, followed by the addition of a polymerizable compound (Db2) and mixing. Subsequently, the polymerization initiator (E), antioxidant (F), leveling agent (H), and solvent (J) shown in Table 1 were added and mixed, followed by the addition of a light scattering agent (B) and mixing to prepare Composition 7 having the composition shown in Table 1. All mixing operations at each stage were performed at room temperature (25°C). In Table 1, the amounts of components other than the solvent (J) are shown as solid content. R is the value of the polymerizable compound (Df) content relative to the semiconductor particle (A) content in Composition 7. Df / A The results of the evaluation of residual film percentage and process suitability are shown in Table 1.

[0217] (Comparative Example 4: Preparation of Composition 8) A polymerizable compound (Da1) was added to a dispersion of coordination-type semiconductor particles (AG1) obtained in Preparation Example 1 and mixed. Then, the resin (C3) solution obtained in Preparation Example 5 was added and mixed, followed by the addition of a polymerizable compound (Db2) and mixing. Subsequently, the polymerization initiator (E), antioxidant (F), leveling agent (H), and solvent (J) shown in Table 1 were added and mixed, followed by the addition of a light scattering agent (B) and mixing to prepare Composition 8 having the composition shown in Table 1. In Table 1, the amounts of components other than solvent (J) are shown as solid content. All mixing operations at each stage were performed at room temperature (25°C). The value of the polymerizable compound (Df) content relative to the semiconductor particle (A) content in Composition 8 is R. Df / A Table 1 shows the results of the process suitability evaluation. Note that composition 8 showed poor solubility in the developer (0.05% TMAH aqueous solution) (process suitability evaluation: C), therefore the residual film rate could not be evaluated.

[0218]

[0219] The details of each component shown in Table 1 are as follows: Polymerizable compound (Da1): Carboxylate-containing polyfunctional (meth)acrylate (manufactured by Toagosei Co., Ltd., Aronics® M-510) Polymerizable compound (Db1): Trimethylolpropane triacrylate Polymerizable compound (Db2): Ethylene oxide-modified bisphenol A diacrylate (manufactured by Daicel Ornex, EBECRYL150, molecular weight: 512) Polymerization initiator (E1): Compound represented by the following formula

[0220] Polymerization initiator (E2): A compound represented by the following formula (100% solids content) produced by the method described in Japanese Patent Publication No. 2011-132215.

[0221] Antioxidant (F1): Phosphorus / phenol complex antioxidant (manufactured by Sumitomo Chemical Co., Ltd., Smilizer®-GP) Leveling agent (H1): Polyether-modified silicone oil (manufactured by Toray Dow Corning Co., Ltd., Toray Silicone SH8400) Solvent (J1): PGMEA (propylene glycol monomethyl ether acetate) Solvent (J2): Cyclohexyl acetate

Claims

1. A composition comprising semiconductor particles (A), a resin (C), and a polymerizable compound (D), wherein the polymerizable compound (D) contains a polymerizable compound (Da) having a functional group exhibiting coordination ability, and the value R is represented by the following formula. Df / A A composition in which the ratio is less than 0.

6. Df / A = R Df / R A (In the formula, R A R is the content (mass) of semiconductor particles (A) in the composition. Df (This indicates the content (mass) of polymerizable compound (Df), which is a polymerizable compound (D) that is not coordinated to semiconductor particles (A) in the composition.) 2. The aforementioned value R Df / A The composition according to claim 1, wherein the ratio is 0.10 or higher.

3. The aforementioned value R Df / A The composition according to claim 1, wherein the ratio is 0.40 or less.

4. The aforementioned value R Df / A is 0.20 or less, the composition according to claim 1.

5. The composition according to claim 1, wherein the acid value of the resin (C) is less than 120 mgKOH / g.

6. The composition according to claim 1, wherein the double bond equivalent of the resin (C) is less than 500 g / eq.

7. A method for producing a composition comprising semiconductor particles (A), a resin (C), and a polymerizable compound (D), wherein the polymerizable compound (D) contains a polymerizable compound (Da) having a functional group exhibiting coordinating ability, and the mixing of the semiconductor particles (A) and the resin (C) is started before or at the start of mixing of the semiconductor particles (A) and the polymerizable compound (Da) having a functional group exhibiting coordinating ability.

8. A cured film formed from the composition according to any one of claims 1 to 6.

9. A display device comprising the cured film according to claim 8.