RF system, instruction device, and program

Abstract

This RF system comprises a first RF power supply and an instruction device. The instruction device is configured to perform: preparing a set of a plurality of first RF pulse pattern conditions respectively corresponding to a plurality of first identifiers; collectively transmitting the set of the plurality of first RF pulse pattern conditions to the first RF power supply through a communication line in advance before operation of the first RF power supply begins; and transmitting one of the plurality of first identifiers to the first RF power supply in real time through the communication line during the operation of the first RF power supply. The first RF power supply includes: a first storage unit configured to store the set of the plurality of first RF pulse pattern conditions received collectively in advance from the instruction device; and a first control unit configured to generate a first RF output under a first RF pulse pattern condition corresponding to the first identifier received in real time from the instruction device.

Description

RF System, Instruction Device and Program

[0001] Exemplary embodiments of the present disclosure relate to an RF system, an instruction device, and a program.

[0002] In a system including a plasma chamber, a host computer, and an RF generator, there is a technique described in Patent Document 1 as a technique for the RF generator to generate RF signals in a plurality of states.

[0003] As a technique in which an RF signal supplied from an RF generator to a plasma chamber has a plurality of parameter levels, there is a technique described in Patent Document 2.

[0004] International Publication No. 2023 / 158491 Japanese Unexamined Patent Publication No. 2021-532574

[0005] The present disclosure provides a technique capable of handling complex RF pulse conditions in an RF system.

[0006] The RF system according to one exemplary embodiment of the present disclosure includes a first RF power supply and an instruction device, wherein the instruction device is configured to: prepare a set of a plurality of first RF pulse pattern conditions respectively corresponding to a plurality of first identifiers; collectively transmit the set of the plurality of first RF pulse pattern conditions to the first RF power supply in advance via a communication line before the operation of the first RF power supply; and transmit any one of the plurality of first identifiers to the first RF power supply in real time via the communication line during the operation of the first RF power supply; and the first RF power supply comprises: a first storage unit configured to store the set of the plurality of first RF pulse pattern conditions received collectively in advance from the instruction device; and a first control unit configured to generate a first RF output under the first RF pulse pattern condition corresponding to the first identifier received in real time from the instruction device.

[0007] According to one exemplary embodiment of the present disclosure, a technique capable of handling complex RF pulse conditions in an RF power supply can be provided.

[0008] This diagram illustrates an example configuration of a plasma processing system. This diagram illustrates an example configuration of a plasma processing apparatus. This diagram illustrates an example configuration of an RF system. This diagram illustrates an example of a set of first RF pulse pattern conditions corresponding to multiple first identifiers. This diagram illustrates an example of the input section of the first RF pulse pattern conditions. This diagram illustrates an example of the RF output of pattern A in the first RF pulse pattern conditions. This diagram illustrates an example of the RF output of pattern B in the first RF pulse pattern conditions. This diagram illustrates an example of the flow of the first RF pulse pattern conditions. This diagram illustrates an example of the RF output of the first RF pulse pattern conditions. This diagram illustrates another example of the input section of the first RF pulse pattern conditions. This diagram illustrates another example of the flow of the first RF pulse pattern conditions. This diagram illustrates another example of the RF output of pattern A in the first RF pulse pattern conditions. This diagram illustrates an example of the operation flowchart of the RF system. This diagram illustrates another example configuration of the RF system. This diagram illustrates an example of a set of second RF pulse pattern conditions corresponding to multiple second identifiers. This diagram illustrates an example of the input section of the second RF pulse pattern conditions. This is a diagram illustrating an example of the RF output of pattern C in the second RF pulse pattern condition. This is a diagram illustrating an example of the RF output of pattern D in the second RF pulse pattern condition. This is a diagram illustrating an example of the RF output of the second RF pulse pattern condition. This is a diagram illustrating an example where the second RF pulse pattern condition is delayed relative to the first RF pulse pattern condition. This is a diagram illustrating another example of the RF system configuration. This is a diagram illustrating an example of a set of voltage pulse pattern conditions corresponding to multiple third identifiers. This is a diagram illustrating an example of the input section of a voltage pulse pattern condition. This is a diagram illustrating an example of the voltage pulse output of pattern E in the voltage pulse pattern condition. This is a diagram illustrating an example of the voltage pulse output of pattern F in the voltage pulse pattern condition. This is a diagram illustrating an example of the voltage pulse output of a voltage pulse pattern condition. This is a diagram illustrating an example of the transmission of a synchronization signal.This is a diagram illustrating other examples of transmission of synchronization signals.

[0009] The embodiments of this disclosure are described below.

[0010] In one exemplary embodiment, an RF system is provided comprising a first RF power supply and an indicator device, the indicator device being configured to prepare a set of multiple first RF pulse pattern conditions corresponding to a plurality of first identifiers, transmit the sets of multiple first RF pulse pattern conditions to the first RF power supply in advance via a communication line before the operation of the first RF power supply, and transmit any of the plurality of first identifiers to the first RF power supply in real time via a communication line while the first RF power supply is operating, the RF system being provided comprising a first storage unit configured to store the sets of multiple first RF pulse pattern conditions received in advance in advance from the indicator device, and a first control unit configured to generate a first RF output with the first RF pulse pattern conditions corresponding to the first identifiers received in real time from the indicator device.

[0011] In one exemplary embodiment, the first RF pulse pattern condition has a plurality of first patterns, each of which includes the following parameters: (a) a plurality of first states, and (b) the number of repetitions of each of the plurality of first patterns.

[0012] In one exemplary embodiment, each of a plurality of first states includes the following parameters: (c) a first power level, and (d) a first duty cycle.

[0013] In one exemplary embodiment, at least one of a plurality of first states has a first divided state and a second divided state that are alternately repeated at a first frequency, wherein the parameters of the first divided state include a first power level, and the parameters of the second divided state include a second power level that is smaller than the first power level.

[0014] In one exemplary embodiment, the RF system further comprises a second RF power supply, the indicator device is configured to prepare a set of multiple second RF pulse pattern conditions corresponding to a plurality of second identifiers, transmit the set of multiple second RF pulse pattern conditions to the second RF power supply in advance via a communication line before the operation of the second RF power supply, and transmit any of the plurality of second identifiers to the second RF power supply in real time via a communication line while the second RF power supply is operating, the second RF power supply includes a second storage unit configured to store the set of multiple second RF pulse pattern conditions received in advance in advance from the indicator device, and a second control unit configured to generate a second RF output with the second RF pulse pattern conditions corresponding to the second identifiers received in real time from the indicator device.

[0015] In one exemplary embodiment, the second RF pulse pattern condition has a plurality of second patterns, each of which includes the following parameters: (e) a plurality of second states, and (f) the number of repetitions of each of the second patterns.

[0016] In one exemplary embodiment, each of a plurality of second states includes the following parameters: (g) a third power level, and (h) a second duty cycle.

[0017] In one exemplary embodiment, the second RF pulse pattern condition is synchronized with the first RF pulse pattern condition.

[0018] In one exemplary embodiment, the second RF pulse pattern condition is delayed relative to the first RF pulse pattern condition.

[0019] In one exemplary embodiment, the RF system further comprises a voltage pulse generator, the indicator device is configured to prepare a set of multiple voltage pulse pattern conditions corresponding to a set of multiple second identifiers, transmit the set of multiple voltage pulse pattern conditions to the voltage pulse generator in advance via a communication line before the voltage pulse generator is operated, and transmit any of the set of multiple second identifiers to the voltage pulse generator in real time via a communication line while the voltage pulse generator is operating, the voltage pulse generator having a second storage unit configured to store the set of multiple voltage pulse pattern conditions received in advance in advance from the indicator device, and a second control unit configured to generate a voltage pulse output with the voltage pulse pattern conditions corresponding to the second identifiers received in real time from the indicator device.

[0020] In one exemplary embodiment, an instruction device is provided that is configured to prepare a set of multiple RF pulse pattern conditions corresponding to a set of multiple identifiers, to transmit the sets of multiple RF pulse pattern conditions to an RF power supply in advance via a communication line, and to transmit any of the multiple identifiers to the RF power supply in real time via a communication line.

[0021] In one exemplary embodiment, the RF pulse pattern condition has a plurality of patterns, each of which includes the following parameters: (a) a plurality of states, and (b) the number of repetitions for each of the plurality of patterns.

[0022] In one exemplary embodiment, each of a plurality of states includes the following parameters: (c) a first power level, and (d) a first duty cycle.

[0023] In one exemplary embodiment, at least one of a plurality of states has a first divided state and a second divided state that are alternately repeated at a first frequency, wherein the parameters of the first divided state include a first power level, and the parameters of the second divided state include a second power level that is smaller than the first power level.

[0024] In one exemplary embodiment, a program is provided that causes a computer to perform the following actions: prepare a set of RF pulse pattern conditions corresponding to a set of identifiers; transmit the sets of RF pulse pattern conditions to an RF power supply in advance via a communication line; and transmit any of the identifiers to the RF power supply in real time via a communication line.

[0025] In one exemplary embodiment, the RF pulse pattern condition has a plurality of patterns, each of which includes the following parameters: (a) a plurality of states, and (b) the number of repetitions for each of the plurality of patterns.

[0026] In one exemplary embodiment, each of a plurality of states includes the following parameters: (c) a first power level, and (d) a first duty cycle.

[0027] In one exemplary embodiment, at least one of a plurality of states has a first divided state and a second divided state that are alternately repeated at a first frequency, wherein the parameters of the first divided state include a first power level, and the parameters of the second divided state include a second power level that is smaller than the first power level.

[0028] Hereinafter, each embodiment of this disclosure will be described in detail with reference to the drawings. In each drawing, the same or similar elements are denoted by the same reference numeral, and redundant explanations are omitted. Unless otherwise specified, positional relationships such as top, bottom, left, and right will be described based on the positional relationships shown in the drawings. The dimensional ratios in the drawings do not represent actual ratios, and actual ratios are not limited to those shown.

[0029] <Example of a Plasma Processing System> Figure 1 is a diagram illustrating an example of the configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas outlet for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20, which will be described later, and the gas outlet is connected to an exhaust system 40, which will be described later. The substrate support unit 11 is located in the plasma processing space and has a substrate support surface for supporting a substrate.

[0030] The plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR (Electron Cyclotron Resonance) plasma, helicon wave excited plasma (HWP), or surface wave plasma (SWP), etc. Various types of plasma generation units, including AC (Alternating Current) plasma generation units and DC (Direct Current) plasma generation units, may also be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0031] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 may be configured to control the elements of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 is implemented, for example, by a computer 2a. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The functions realized by the processing unit 2a1 described herein may be implemented in a circuit or processing circuit, including a general-purpose processor, an application-specific processor, integrated circuits, ASICs (Application Specific Integrated Circuits), a CPU (Central Processing Unit), a conventional circuit, and / or a combination thereof, programmed to realize the described functions. The processor is considered to be a circuit or processing circuit, including transistors and other circuits. The processor may be a programmed processor that executes a program stored in the storage unit 2a2. This program may be pre-stored in the storage unit 2a2 or retrieved via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or it may be a communication line connected to the communication interface 2a3. The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).In this disclosure, circuits, units, and means are hardware programmed to perform or configured to perform the functions described. Such hardware may be any hardware described in this disclosure, or any hardware known to be programmed to perform or execute the functions described. If such hardware is a processor that is considered to be a type of circuit, such circuit, means, or unit is a combination of hardware and software used to constitute such hardware and / or processor.

[0032] The following describes an example configuration of a capacitively coupled plasma processing apparatus as an example of a plasma processing apparatus 1. Figure 2 is a diagram illustrating an example configuration of a capacitively coupled plasma processing apparatus.

[0033] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply system 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is located inside the plasma processing chamber 10. The shower head 13 is located above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side walls 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0034] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 in a plan view. The substrate W is placed on the central region 111a of the main body portion 111, and the ring assembly 112 is placed on the annular region 111b of the main body portion 111 so as to surround the substrate W on the central region 111a of the main body portion 111. Therefore, the central region 111a is also called the substrate support surface for supporting the substrate W, and the annular region 111b is also called the ring support surface for supporting the ring assembly 112.

[0035] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is placed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic chuck electrode 1111b placed within the ceramic member 1111a. The electrostatic chuck electrode 1111b is also called a clamping electrode. In one embodiment, the electrostatic chuck electrode 1111b is electrically connected or coupled to a chuck power supply. The chuck power supply may be a DC power supply or an AC power supply. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Furthermore, other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have an annular region 111b. In this case, the ring assembly 112 may be placed on the annular electrostatic chuck or the annular insulating member, or it may be placed on both the electrostatic chuck 1111 and the annular insulating member. In addition, at least one bias electrode, which is electrically connected or coupled to the power supply 31 and / or power supply 32 described later, may be placed inside the ceramic member 1111a. In this case, at least one bias electrode functions as a lower electrode. Also, the conductive member of the base 1110 and the bias electrode inside the ceramic member 1111a may function as multiple lower electrodes. In one embodiment, the first voltage generation unit 32a, which functions as a voltage pulse generation unit described later, is electrically connected or coupled to the bias electrode inside the ceramic member 1111a, and the first RF generation unit 31a, described later, is electrically connected or coupled to the conductive member of the base 1110. Furthermore, the electrostatic chuck electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0036] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one covering ring. The edge rings are formed of a conductive or insulating material, and the covering rings are formed of an insulating material.

[0037] The substrate support section 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed within the base 1110, and one or more heaters are arranged within the ceramic member 1111a of the electrostatic chuck 1111. The substrate support section 11 may also include a heat transfer gas supply section configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.

[0038] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlet ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s through the plurality of gas inlet ports 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the side wall 10a.

[0039] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas to the shower head 13 from a corresponding gas source 21 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of at least one processing gas.

[0040] The power supply system 30 includes a power supply 31 that is electrically connected to or coupled to the plasma processing chamber 10. In one embodiment, the power supply 31 is electrically connected to or coupled to the plasma processing chamber 10 via at least one impedance matcher. The impedance matcher may be a mechanically controlled matcher or an electronically controlled matcher. The power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the power supply 31 can function as at least part of the plasma generation unit 12. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and ionic components in the formed plasma can be drawn into the substrate W.

[0041] The power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode and is configured to generate a source RF signal (source RF power) to generate plasma in the plasma processing space 10s. In one embodiment, the first RF generation unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matcher. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. One or more generated source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0042] The second RF generation unit 31b is electrically connected to or coupled to at least one lower electrode and is configured to generate a bias RF signal (bias RF power). In one embodiment, the second RF generation unit 31b is electrically connected to or coupled to at least one lower electrode via at least one impedance matcher. When the first RF generation unit 31a is electrically connected to or coupled to a lower electrode, the second RF generation unit 31b may be electrically connected to or coupled to the same lower electrode, or it may be electrically connected to or coupled to a different lower electrode. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0043] The power supply system 30 may also include a power supply 32 that is electrically connected to or coupled to the plasma processing chamber 10. The power supply 32 includes a first voltage generation unit 32a and a second voltage generation unit 32b. In one embodiment, the first voltage generation unit 32a is electrically connected to or coupled to at least one lower electrode and is configured to generate a first voltage signal. The generated first voltage signal is applied to at least one lower electrode. In one embodiment, the second voltage generation unit 32b is electrically connected to or coupled to at least one upper electrode and is configured to generate a second voltage signal. The generated second voltage signal is applied to at least one upper electrode.

[0044] In various embodiments, the first and / or second voltage signals may be pulsed. In this case, the first voltage generator 32a and / or the second voltage generator 32b functions as a voltage pulse generator configured to generate a sequence of voltage pulses. Accordingly, the sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. In one embodiment, the sequence of voltage pulses includes a plurality of cycles, each cycle including a burst of voltage pulses in a first period and a constant reference voltage in a second period. That is, bursts of voltage pulses are repeated in the sequence of voltage pulses. The absolute value of the voltage level of the voltage pulse is greater than the absolute value of the voltage level of the reference voltage. The voltage pulse may be an arbitrary waveform having a rectangular shape, a trapezoidal shape, a triangular shape, or a combination thereof, and the arbitrary waveform may vary over time. The voltage pulse may have a positive polarity or a negative polarity. In addition, the sequence of voltage pulses may include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses within one cycle. Note that the first and second voltage generators 32a and 32b may be provided in addition to the power supply 31, or the first voltage generator 32a may be provided in place of the second RF generator 31b.

[0045] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0046] <Configuration Example of RF System> Figure 3 is a diagram for explaining a configuration example of an RF system 200 according to an embodiment. In one embodiment, the RF system 200 includes a control unit 2 and a first RF generator 31a configured to generate a source RF output. The control unit 2 is an example of an instruction device. The first RF generator 31a is an example of a first RF power supply. The first RF generator 31a is configured to generate an RF output of a given frequency.

[0047] The control unit 2 is configured to be communicable with the first RF generation unit 31a via a communication line 250. The control unit 2 is configured to perform the steps of: preparing a set of a plurality of first RF pulse pattern conditions respectively corresponding to a plurality of first identifiers; collectively transmitting the set of the plurality of first RF pulse pattern conditions to the first RF generation unit 31a in advance via the communication line 250 before the operation of the first RF generation unit 31a; and transmitting any one of the plurality of first identifiers to the first RF generation unit 31a in real time via the communication line 250 during the operation of the first RF generation unit 31a. EtherCAT (registered trademark) may be used for the communication line 250.

[0048] The first RF generation unit 31a includes a first storage unit 300 and a first control unit 301. The first storage unit 300 is configured to store the set of the plurality of first RF pulse pattern conditions collectively received in advance from the control unit 2. The first control unit 301 is configured to generate a first RF output under the first RF pulse pattern condition corresponding to the first identifier received in real time from the control unit 2.

[0049] In one embodiment, as shown in FIG. 4, the control unit 2 prepares a plurality of first identifiers xn (n is an integer of 2 or more) and a plurality of corresponding first RF pulse pattern conditions Xn (n is an integer of 2 or more).

[0050] As shown in FIG. 3, the control unit 2 includes an input unit 360. The input unit 360 is configured to input and prepare a plurality of first RF pulse pattern conditions Xn respectively corresponding to the plurality of first identifiers xn. The input unit 360 may be a touch screen displayed on a screen of a display device.

[0051] Each first RF pulse pattern condition Xn is a set of conditions for generating a first RF output (RF pulse signal). The first RF pulse pattern condition Xn may be a table of these conditions. In one embodiment, each first RF pulse pattern condition Xn has a pattern. The pattern includes a set of states and the number of repetitions of the pattern (the set of states as a whole). In one embodiment, each of the states includes the power level of the RF output and the duty cycle (the ratio of the duration of each state to the total duration of the set of states). In one embodiment, each first RF pulse pattern condition Xn may include the number of repetitions of the pattern. Furthermore, each first RF pulse pattern condition Xn may include the number of repetitions of each of the states of the pattern.

[0052] In one embodiment, each first RF pulse pattern condition Xn may have a plurality of patterns. In one embodiment, each of the plurality of patterns includes a plurality of states and the number of repetitions for each pattern. In one embodiment, each of the plurality of states includes the power level and duty cycle of the RF output. Each of the plurality of states may include the number of repetitions for each of the plurality of states. Each first RF pulse pattern condition Xn may include the total number of repetitions for the plurality of patterns.

[0053] For example, as shown in Figure 5, the first RF pulse pattern condition X1 may have two patterns A and B. Pattern A includes four states Sa1 to Sa4 and the number of repetitions Na of Pattern A (the entire set of four states Sa1 to Sa4), where each of the four states Sa1 to Sa4 includes RF output power levels Pa1, Pa2, Pa3, Pa4 and duty cycles Da1, Da2, Da3, Da4. Pattern B includes four states Sb1 to Sb4 and the number of repetitions Nb of Pattern B (the entire set of four states Sb1 to Sb4), where each of the four states Sb1 to Sb4 includes power levels Pb1, Pb2, Pb3, Pb4 and duty cycles Db1, Db2, Db3, Db4. The input unit 360 may have an input screen as shown in Figure 5. Pattern A may generate an RF output as shown in Figure 6, for example. Pattern B may generate an RF output such as that shown in Figure 7. The first RF pulse pattern condition Xn includes the total number of repetitions Nxn for patterns A and B.

[0054] According to this first RF pulse pattern condition X1, as shown in Figure 8, a cycle consisting of states Sa1 to Sa4 of pattern A is repeated Na times, and then a cycle consisting of states Sb1 to Sb4 of pattern B is repeated Nb times. Then, the cycle consisting of patterns A and B is repeated Nxn times. With this example's first RF pulse pattern condition Xn, an RF output like the one shown in Figure 9 is generated.

[0055] As shown in Figure 10, patterns A and B may further include the number of repetitions for each of multiple states. Pattern A includes the number of repetitions Naa for states Sa1 and Sa2, and the number of repetitions 1 for states Sa1 and Sa2. Pattern B includes the number of repetitions Nbb for states Sb2 and Sb3, and the number of repetitions 1 for states Sb1 and Sb4. The input unit 360 may have an input screen as shown in Figure 10. In this example, as shown in Figure 11, the cycle consisting of states Sa1 to Sa2 of pattern A is repeated Naa times, then states Sa3 and Sa4 of pattern A are performed, and the cycle consisting of these states Sa1 to Sa4 is repeated Na times. Next, state Sb1 of pattern B is performed, the cycle consisting of states Sb2 to Sb3 is repeated Nbb times, then state Sb4 is performed, and the cycle consisting of these states Sb1 to Sb4 is repeated Nb times. Then, the cycle consisting of patterns A and B is repeated N x n times.

[0056] At least one of the multiple states of patterns A and B has a first divided state and a second divided state that are alternately repeated at a first frequency, the parameters of the first divided state include a first power level, and the parameters of the second divided state may include a second power level smaller than the first power level. For example, as shown in Figure 12, state Sa4 of pattern A has a first divided state Sa4-1 and a second divided state Sa4-2 that are alternately repeated, the first divided state Sa4-1 has a first power level Pa4-1, and the second divided state Sa4-2 may include a second power level Pa4-2 smaller than the first power level Pa4-1.

[0057] <Example of RF System 200 Operation> Figure 13 is a diagram illustrating an example of a flowchart of the operation of the RF system 200. The operation of the control unit 2 may be performed by having a computer execute a program. First, the control unit 2 prepares a set of multiple first RF pulse pattern conditions Xn corresponding to a plurality of first identifiers xn (step ST1). A set of multiple first RF pulse pattern conditions Xn may be prepared by the user inputting information into the input unit 360 as shown in Figure 5. The plurality of first RF pulse pattern conditions Xn may be set based on a plurality of corresponding substrate processing recipes.

[0058] Next, the control unit 2 transmits a set of multiple first RF pulse pattern conditions Xn (where n is an integer of 2 or more) to the first RF generation unit 31a in advance via the communication line 250 before the operation of the first RF generation unit 31a (step ST2 in Figure 13). Before the operation of the first RF generation unit 31a may be before the first RF generation unit 31a starts generating RF output. For example, the timing at which the set of multiple first RF pulse pattern conditions Xn is transmitted to the first RF generation unit 31a may be during the transport of the substrate in the plasma processing apparatus 1 before the substrate is placed on the substrate support unit 11. Alternatively, the timing at which the set of multiple first RF pulse pattern conditions Xn is transmitted to the first RF generation unit 31a may be when the first RF generation unit 31a is in a standby state.

[0059] The first RF generation unit 31a receives a set of multiple first RF pulse pattern conditions Xn transmitted from the control unit 2. The first storage unit 300 stores the set of multiple first RF pulse pattern conditions Xn (step ST3).

[0060] Next, the plasma processing apparatus 1 starts processing the substrate, and the operation of the first RF generation unit 31a begins (step ST4).

[0061] The substrate is processed according to the substrate processing recipe set in the control unit 2. In the plasma processing apparatus 1, the gas supply unit 20 supplies processing gas into the chamber 10, and the exhaust system 40 reduces the pressure inside the chamber 10. The first RF generation unit 31a generates a source RF output, which is supplied to the upper electrode or the lower electrode. Plasma is generated on the substrate support unit 11 inside the chamber 10, and the substrate is plasma processed.

[0062] During the operation of the first RF generation unit 31a, the control unit 2 transmits one of a plurality of first identifiers xn to the first RF generation unit 31a in real time via the communication line 250, according to the substrate processing recipe. For example, the control unit 2 transmits the first identifier x1 to the first RF generation unit 31a (step ST5).

[0063] The first RF generation unit 31a receives the first identifier x1 (step ST6). The first control unit 301 generates an RF output with the first RF pulse pattern condition X1 corresponding to the received first identifier x1 (step ST7). That is, it generates an RF output of an RF pulse signal as shown in Figure 9, for example.

[0064] The control unit 2 transmits the next first identifier x2 to the first RF generation unit 31a at a given timing according to the substrate processing recipe (step ST8). The first RF generation unit 31a receives the first identifier x2 (step ST9). The first identifier x2 is transmitted before the generation of the RF output under the first RF pulse pattern condition X1 is completed, and the first RF generation unit 31a prepares to generate the next RF output under the first RF pulse pattern condition X2 corresponding to the received first identifier x2. Then, the first control unit 301 generates the RF output under the first RF pulse pattern condition X2 (step ST10).

[0065] The control unit 2 transmits all first identifiers xn selected according to the substrate processing recipe. The first RF generation unit 31a generates RF outputs for all first RF pulse pattern conditions Xn corresponding to the first identifiers xn received according to the substrate processing recipe. After that, the operation of the first RF generation unit 31a stops.

[0066] The control unit 2 may transmit a first identifier to the first RF generation unit 31a based on a signal detected by a sensor (such as a VI sensor) placed in the output path of the RF output, and change the first RF pulse pattern conditions to those corresponding to the first identifier. Furthermore, when the pressure value of the pressure sensor measuring the pressure in the chamber 10 exceeds a threshold, the control unit 2 may transmit a first identifier to the first RF generation unit 31a and change the first RF pulse pattern conditions to those corresponding to the first identifier.

[0067] According to this exemplary embodiment, the RF system 200 comprises a first RF generation unit 31a and a control unit 2. The control unit 2 is configured to prepare a set of multiple first RF pulse pattern conditions corresponding to a plurality of first identifiers, to transmit the sets of multiple first RF pulse pattern conditions to the first RF generation unit 31a in advance via a communication line 250 before the operation of the first RF generation unit 31a, and to transmit any of the plurality of first identifiers to the first RF generation unit 31a in real time via the communication line 250 while the operation of the first RF generation unit 31a. The first RF generation unit 31a has a first storage unit 300 and a first control unit 301. The first storage unit 300 is configured to store a set of multiple first RF pulse pattern conditions that have been received in advance in advance from the control unit 2. The first control unit 301 is configured to generate a first RF output with the first RF pulse pattern conditions corresponding to the first identifiers received in real time from the control unit 2. As a result, before the operation of the first RF generation unit 31a, a set of multiple first RF pulse pattern conditions can be transmitted to the first RF generation unit 31a all at once, and while the first RF generation unit 31a is operating, only multiple first identifiers can be transmitted to the first RF generation unit 31a. This eliminates the need to send the conditions for generating the RF output to the RF power supply in real time, so the RF system can cope even if the RF pulse output becomes more complex and the amount of information required for generating the RF pulse output increases.

[0068] In the embodiments described above, the RF system 200 may, similar to the source RF output, pre-transmit all conditions for generating a bias RF signal (bias RF output) to the second RF generation unit 31b. In one embodiment, as shown in Figure 14, the RF system 200 further includes a second RF generation unit 31b. The second RF generation unit 31b is an example of a second RF power supply. The second RF generation unit 31b is configured to generate an RF output of a given frequency. The frequency of the RF output of the second RF generation unit 31b may be lower than the frequency of the RF output of the first RF generation unit 31a.

[0069] The control unit 2 is configured to communicate with the second RF generation unit 31b via the communication line 250. The control unit 2 is configured to perform the following steps: prepare a set of multiple second RF pulse pattern conditions corresponding to a plurality of second identifiers; transmit the set of multiple second RF pulse pattern conditions to the second RF generation unit 31b in advance via the communication line 250 before the operation of the second RF generation unit 31b; and transmit one of the plurality of second identifiers to the second RF generation unit 31b in real time via the communication line 250 while the second RF generation unit 31b is operating.

[0070] The second RF generation unit 31b includes a second storage unit 400 and a second control unit 401. The second storage unit 400 is configured to store a set of multiple second RF pulse pattern conditions that have been received in advance from the control unit 2. The second control unit 401 is configured to generate a second RF output with second RF pulse pattern conditions corresponding to a second identifier received in real time from the control unit 2.

[0071] For example, as shown in Figure 15, the control unit 2 prepares a plurality of second identifiers yn (where n is an integer of 2 or more) and a plurality of corresponding second RF pulse pattern conditions Yn (where n is an integer of 2 or more).

[0072] The input unit 360 is configured to input and prepare a plurality of second RF pulse pattern conditions Yn, each corresponding to a plurality of second identifiers yn.

[0073] Each second RF pulse pattern condition Yn is a set of conditions for generating a second RF output (RF pulse signal). The second RF pulse pattern condition Yn may be a table of these conditions. Each second RF pulse pattern condition Yn may have the same pattern and parameters as the first RF pulse pattern condition Xn described above. That is, in one embodiment, each second RF pulse pattern condition Yn has a pattern. The pattern includes a plurality of states and the number of repetitions of the pattern (the entire plurality of states). In one embodiment, each of the plurality of states includes the power level of the RF output and the duty cycle (the ratio of the duration of each state to the total duration of the plurality of states). In one embodiment, each second RF pulse pattern condition Yn may include the number of repetitions of the pattern. Furthermore, each second RF pulse pattern condition Yn may include the number of repetitions of each of the plurality of states of the pattern.

[0074] In one embodiment, each second RF pulse pattern condition Yn may have a plurality of patterns. In one embodiment, each of the plurality of patterns includes a plurality of states and the number of repetitions for each pattern. In one embodiment, each of the plurality of states includes the power level and duty cycle of the RF output. Each of the plurality of states may include the number of repetitions for each of the plurality of states. Each second RF pulse pattern condition Yn may include the total number of repetitions for the plurality of patterns.

[0075] For example, as shown in Figure 16, the second RF pulse pattern condition Yn may have two patterns C and D. Patterns C and D may include the same parameters as patterns A and B. Pattern C includes four states Sc1 to Sc4 and the number of repetitions of pattern C (the entire set of four states Sc1 to Sc4) Nc, where each of the four states Sc1 to Sc4 includes RF output power levels Pc1, Pc2, Pc3, Pc4 and duty cycles Dc1, Dc2, Dc3, Dc4. Pattern D includes four states Sd1 to Sd4 and the number of repetitions of pattern D (the entire set of four states Sd1 to Sd4) Nd, where each of the four states Sd1 to Sd4 includes power levels Pd1, Pd2, Pd3, Pd4 and duty cycles Dd1, Dd2, Dd3, Dd4. The second RF pulse pattern condition Yn includes the total number of repetitions Nyn for patterns C and D. Pattern C may generate an RF output as shown in Figure 17, for example. Pattern D may generate an RF output as shown in Figure 18. The second RF pulse pattern condition Yn in this example may generate an RF output as shown in Figure 19, for example.

[0076] In this case, the second RF pulse pattern condition Yn may be synchronized with the first RF pulse pattern condition X1. Alternatively, the second RF pulse pattern condition Yn may be delayed relative to the first RF pulse pattern condition Xn. For example, as shown in Figure 20, the second RF pulse pattern condition Yn is delayed by time T0 relative to the first RF pulse pattern condition Xn. The delay time T0 of the second RF pulse pattern condition Yn may be included in the parameters of the second RF pulse pattern condition Yn.

[0077] In this embodiment, the RF system 200 has a plurality of second RF generation units 31b, and the control unit 2 may prepare and transmit a plurality of sets of second RF pulse pattern conditions Yn to each of the plurality of second RF generation units 31b. The plurality of second RF generation units 31b may generate RF outputs of different frequencies.

[0078] In the embodiments described above, the RF system 200 may pre-transmit various conditions for generating a voltage pulse signal (voltage pulse output) to at least one of the first voltage generation unit 32a and the second voltage generation unit 32b, similar to the source RF output and bias RF output. In one embodiment, as shown in Figure 21, the RF system 200 further includes a first voltage generation unit 32a. The first voltage generation unit 32a is an example of a voltage pulse generator. The RF system 200 may also include either a second RF generation unit 31b or a first voltage generation unit 32a.

[0079] The control unit 2 is configured to communicate with the first voltage generation unit 32a via the communication line 250. The control unit 2 is configured to perform the following steps: prepare a set of multiple voltage pulse pattern conditions corresponding to a plurality of third identifiers; transmit the set of multiple voltage pulse pattern conditions to the first voltage generation unit 32a in advance via the communication line 250 before the operation of the first voltage generation unit 32a; and transmit one of the plurality of third identifiers to the first voltage generation unit 32a in real time via the communication line 250 while the operation of the first voltage generation unit 32a.

[0080] The first voltage generation unit 32a includes a third storage unit 500 and a third control unit 501. The third storage unit 500 is configured to store a set of multiple voltage pulse pattern conditions that have been received in advance from the control unit 2. The third control unit 501 is configured to generate a voltage pulse output in the first voltage generation unit 32a corresponding to a third identifier received in real time from the control unit 2.

[0081] For example, as shown in Figure 22, the control unit 2 prepares a plurality of third identifiers Zn (where n is an integer of 2 or more) and a plurality of corresponding voltage pulse pattern conditions Zn (where n is an integer of 2 or more).

[0082] The input unit 360 is configured to receive a plurality of voltage pulse pattern conditions Zn, each corresponding to a plurality of third identifiers Zn.

[0083] Each voltage pulse pattern condition Zn is a set of conditions for generating a voltage pulse output (voltage pulse signal). The voltage pulse pattern condition Zn may be a table of these conditions. In one embodiment, each voltage pulse pattern condition Zn has a pattern. The pattern includes a set of states and the number of repetitions of the pattern (the set of states as a whole). In one embodiment, each of the states includes the voltage level of the voltage pulse output and the duty cycle (the ratio of the duration of each state to the total duration of the set of states). In one embodiment, each voltage pulse pattern condition Zn may include the number of repetitions of the pattern. Furthermore, each voltage pulse pattern condition Zn may include the number of repetitions of each of the states of the pattern.

[0084] In one embodiment, each voltage pulse pattern condition Zn may have a plurality of patterns. In one embodiment, each of the plurality of patterns includes a plurality of states and the number of repetitions for each pattern. In one embodiment, each of the plurality of states includes the voltage level and duty cycle of the voltage pulse output. Each of the plurality of states may include the number of repetitions for each of the plurality of states. Each voltage pulse pattern condition Zn may include the total number of repetitions for the plurality of patterns.

[0085] For example, as shown in Figure 23, the voltage pulse pattern condition Zn may have two patterns E and F. Pattern E includes four states Se1 to Se4 and the number of repetitions Ne of pattern E (the entire set of four states Se1 to Se4), each of the four states Se1 to Se4 including voltage levels Ve1, Ve2, Ve3, Ve4 and duty cycles De1, De2, De3, De4 of the voltage pulse output. Pattern F includes four states Sf1 to Sf4 and the number of repetitions Nf of pattern F (the entire set of four states Sf1 to Sf4), each of the four states Sf1 to Sf4 including voltage levels Vf1, Vf2, Vf3, Vf4 and duty cycles Df1, Df2, Df3, Df4 of the voltage pulse output. The voltage pulse pattern condition Zn includes the total number of repetitions NZn of patterns E and F. Pattern E may generate a voltage pulse output as shown in Figure 24, for example. Pattern F may generate a voltage pulse output as shown in Figure 25. The voltage pulse pattern condition Zn in this example may generate a voltage pulse output as shown in Figure 26, for example.

[0086] The number of power supplies in the RF system 200 is not limited to the above example. In one embodiment, as shown in Figure 27, the RF system 200 may have a first RF generation unit 31a and two second RF generation units 31b. The two second RF generation units 31b may generate RF pulse outputs with different frequencies.

[0087] If the RF system 200 has multiple power supplies, the control unit 2 needs to send a synchronization signal to each power supply to synchronize their operation. In one embodiment, the synchronization signal may be sent from the control unit 2 to the first RF generation unit 31a (master power supply), from the first RF generation unit 31a to the first second RF generation unit 31b (sub-power supply), and from the first second RF generation unit 31b to the second second RF generation unit 31b (sub-power supply). Alternatively, as shown in Figure 28, the synchronization signal may be sent from the control unit 2 to the first RF generation unit 31a (master power supply), and from the first RF generation unit 31a to the two second RF generation units 31b (sub-power supplies).

[0088] In the embodiments described above, a capacitively coupled plasma apparatus was used as an example, but the invention is not limited to this and may be applied to other plasma apparatuses. For example, an inductively coupled plasma apparatus may be used instead of a capacitively coupled plasma apparatus. In this case, the inductively coupled plasma apparatus includes an antenna and a substrate support. The antenna is located on or above the chamber. In one embodiment, the source power supply is electrically connected to the antenna, and the bias power supply is electrically connected to the conductive base of the substrate support. Furthermore, the RF system 200 may be applied to apparatuses other than plasma apparatuses.

[0089] Embodiments of this disclosure further include the following embodiments:

[0090] (Note 1) An RF system comprising: a first RF power supply; and an indicator device, wherein the indicator device is configured to: prepare a set of a plurality of first RF pulse pattern conditions corresponding to a plurality of first identifiers; transmit the set of a plurality of first RF pulse pattern conditions to the first RF power supply in advance via a communication line before the operation of the first RF power supply; and transmit any of the plurality of first identifiers to the first RF power supply in real time via a communication line while the operation of the first RF power supply; wherein the first RF power supply comprises: a first storage unit configured to store the set of a plurality of first RF pulse pattern conditions received in advance in a batch from the indicator device; and a first control unit configured to generate a first RF output with the first RF pulse pattern conditions corresponding to the first identifiers received in real time from the indicator device.

[0091] (Note 2) The first RF pulse pattern condition has a plurality of first patterns, each of the plurality of first patterns includes the following parameters: (a) a plurality of first states, (b) the number of repetitions of each of the plurality of first patterns, the RF system as described in Note 1.

[0092] (Note 3) Each of the plurality of first states includes the following parameters: (c) a first power level, (d) a first duty cycle, the RF system as described in Note 2.

[0093] (Note 4) The RF system according to Note 3, wherein at least one of the plurality of first states has a first divided state and a second divided state that are alternately repeated at a first frequency, the parameters of the first divided state include the first power level, and the parameters of the second divided state include a second power level that is smaller than the first power level.

[0094] (Note 5) The RF system further comprises a second RF power supply, the indicator device is configured to prepare a set of a plurality of second RF pulse pattern conditions corresponding to a plurality of second identifiers, transmit the set of a plurality of second RF pulse pattern conditions to the second RF power supply in advance via a communication line before the operation of the second RF power supply, and transmit any of the plurality of second identifiers to the second RF power supply in real time via a communication line while the second RF power supply is operating, the RF system according to any one of Notes 1 to 4, the second RF power supply having a second storage unit configured to store the set of a plurality of second RF pulse pattern conditions received in advance in advance from the indicator device, and a second control unit configured to generate a second RF output with the second RF pulse pattern conditions corresponding to the second identifiers received in real time from the indicator device.

[0095] (Note 6) The second RF pulse pattern condition has a plurality of second patterns, each of which includes the following parameters (e) and (f): (e) a plurality of second states, (f) the number of repetitions of each of the second patterns, the RF system as described in Note 5.

[0096] (Note 7) Each of the plurality of second states includes the following parameters: (g) a third power level, (h) a second duty cycle, the RF system as described in Note 6.

[0097] (Note 8) The RF system described in any one of Notes 5 to 7, wherein the second RF pulse pattern condition is synchronized with the first RF pulse pattern condition.

[0098] (Note 9) The RF system according to any one of Notes 5 to 7, wherein the second RF pulse pattern condition is delayed relative to the first RF pulse pattern condition.

[0099] (Note 10) The RF system further comprises a voltage pulse generator, the instruction device is configured to prepare a set of a plurality of voltage pulse pattern conditions corresponding to a plurality of second identifiers, transmit the set of a plurality of voltage pulse pattern conditions to the voltage pulse generator in advance via a communication line before the operation of the voltage pulse generator, and transmit any of the plurality of second identifiers to the voltage pulse generator in real time via a communication line while the voltage pulse generator is in operation, the RF system according to any one of Notes 1 to 4, the voltage pulse generator having a second storage unit configured to store the set of a plurality of voltage pulse pattern conditions received in advance in advance from the instruction device, and a second control unit configured to generate a voltage pulse output with the voltage pulse pattern conditions corresponding to the second identifiers received in real time from the instruction device.

[0100] (Note 11) An instruction device configured to: prepare a set of multiple RF pulse pattern conditions corresponding to a set of multiple identifiers; transmit the set of multiple RF pulse pattern conditions to an RF power supply in advance via a communication line; and transmit any of the multiple identifiers to the RF power supply in real time via a communication line.

[0101] (Note 12) The RF pulse pattern condition has a plurality of patterns, and each of the plurality of patterns includes the following parameters: (a) a plurality of states, (b) the number of repetitions for each of the plurality of patterns, the indicator device as described in Note 11.

[0102] (Note 13) Each of the above states includes the following parameters: (c) a first power level, (d) a first duty cycle, and the indicator device as described in Note 12.

[0103] (Note 14) The indicator device according to Note 13, wherein at least one of the plurality of states has a first divided state and a second divided state that are alternately repeated at a first frequency, the parameters of the first divided state include the first power level, and the parameters of the second divided state include a second power level that is smaller than the first power level.

[0104] (Note 15) A program configured to cause a computer to perform the following actions: prepare a set of multiple RF pulse pattern conditions corresponding to a set of multiple identifiers; transmit the set of multiple RF pulse pattern conditions to an RF power supply in advance via a communication line; and transmit any of the multiple identifiers to the RF power supply in real time via a communication line.

[0105] (Note 16) The RF pulse pattern condition has a plurality of patterns, each of which includes the following parameters (a) and (b): (a) a plurality of states, (b) the number of repetitions for each of the plurality of patterns, and the program as described in Note 15.

[0106] (Note 17) Each of the above states includes the following parameters: (c) a first power level, (d) a first duty cycle, and the program as described in Note 16.

[0107] (Note 18) The program according to Note 17, wherein at least one of the plurality of states has a first divided state and a second divided state that are alternately repeated at a first frequency, the parameters of the first divided state include the first power level, and the parameters of the second divided state include a second power level that is smaller than the first power level.

[0108] The embodiments described above are for illustrative purposes only and are not intended to limit the scope of this disclosure. The embodiments described above can be modified in various ways without departing from the scope and spirit of this disclosure. For example, some components of one embodiment can be added to other embodiments, or some components of one embodiment can be replaced with corresponding components of other embodiments.

[0109] 1... Plasma processing apparatus, 2... Control unit, 10... Chamber, 11... Substrate support unit, 31a... First RF generation unit, 31b... Second RF generation unit, 32a... First voltage generation unit, 250... Communication line, 300... First storage unit, 301... First control unit

Claims

1. An RF system comprising: a first RF power supply; and an indicator device, wherein the indicator device is configured to: prepare a set of a plurality of first RF pulse pattern conditions corresponding to a plurality of first identifiers; transmit the set of a plurality of first RF pulse pattern conditions to the first RF power supply in advance via a communication line before the operation of the first RF power supply; and transmit any of the plurality of first identifiers to the first RF power supply in real time via a communication line while the operation of the first RF power supply; and the first RF power supply comprises: a first storage unit configured to store the set of a plurality of first RF pulse pattern conditions received in advance in advance from the indicator device; and a first control unit configured to generate a first RF output with the first RF pulse pattern conditions corresponding to the first identifiers received in real time from the indicator device.

2. The first RF pulse pattern condition comprises a plurality of first patterns, each of the plurality of first patterns comprising the following parameters: (a) a plurality of first states, (b) the number of repetitions of each of the plurality of first patterns, the RF system according to claim 1.

3. Each of the plurality of first states includes the following parameters: (c) a first power level, (d) a first duty cycle, the RF system according to claim 2.

4. The RF system according to claim 3, wherein at least one of the plurality of first states has a first divided state and a second divided state that are alternately repeated at a first frequency, the parameters of the first divided state include the first power level, and the parameters of the second divided state include the second power level which is smaller than the first power level.

5. The RF system further comprises a second RF power supply, wherein the indicator device is configured to prepare a set of a plurality of second RF pulse pattern conditions corresponding to a plurality of second identifiers, transmit the set of a plurality of second RF pulse pattern conditions to the second RF power supply in advance via a communication line before the operation of the second RF power supply, and transmit any of the plurality of second identifiers to the second RF power supply in real time via a communication line while the second RF power supply is operating, and the second RF power supply comprises a second storage unit configured to store the set of a plurality of second RF pulse pattern conditions received in advance in advance from the indicator device, and a second control unit configured to generate a second RF output with the second RF pulse pattern conditions corresponding to the second identifiers received in real time from the indicator device, the RF system according to any one of claims 1 to 4.

6. The second RF pulse pattern condition comprises a plurality of second patterns, each of which comprises the following parameters: (e) a plurality of second states, and (f) the number of repetitions of each of the second patterns. The RF system according to claim 5.

7. Each of the plurality of second states comprises the following parameters: (g) a third power level, (h) a second duty cycle, the RF system according to claim 6.

8. The RF system according to claim 5, wherein the second RF pulse pattern condition is synchronized with the first RF pulse pattern condition.

9. The RF system according to claim 5, wherein the second RF pulse pattern condition is delayed relative to the first RF pulse pattern condition.

10. The RF system further comprises a voltage pulse generator, the instruction device is configured to: prepare a set of a plurality of voltage pulse pattern conditions corresponding to a plurality of second identifiers, respectively; transmit the set of a plurality of voltage pulse pattern conditions to the voltage pulse generator in advance via a communication line before the operation of the voltage pulse generator; and transmit any of the plurality of second identifiers to the voltage pulse generator in real time via a communication line while the operation of the voltage pulse generator, the RF system according to any one of claims 1 to 4, the voltage pulse generator comprising: a second storage unit configured to store the set of a plurality of voltage pulse pattern conditions received in advance in advance from the instruction device; and a second control unit configured to generate a voltage pulse output with the voltage pulse pattern conditions corresponding to the second identifiers received in real time from the instruction device.

11. An indicator device configured to: prepare a set of multiple RF pulse pattern conditions corresponding to a set of multiple identifiers; transmit the set of multiple RF pulse pattern conditions to an RF power supply in advance via a communication line; and transmit any of the multiple identifiers to the RF power supply in real time via a communication line.

12. The RF pulse pattern condition has a plurality of patterns, each of which includes the following parameters: (a) a plurality of states, (b) the number of repetitions of each of the plurality of patterns, the indicating device according to claim 11.

13. Each of the plurality of states includes the following parameters: (c) a first power level, (d) a first duty cycle, the indicator device according to claim 12.

14. The indicator device according to claim 13, wherein at least one of the plurality of states has a first divided state and a second divided state that are alternately repeated at a first frequency, the parameters of the first divided state include the first power level, and the parameters of the second divided state include a second power level that is smaller than the first power level.

15. A program configured to cause a computer to perform the following actions: prepare multiple sets of RF pulse pattern conditions corresponding to multiple identifiers; transmit the multiple sets of RF pulse pattern conditions to an RF power supply in advance via a communication line; and transmit any of the multiple identifiers to the RF power supply in real time via a communication line.

16. The RF pulse pattern condition has a plurality of patterns, each of which includes the following parameters: (a) a plurality of states, (b) the number of repetitions of each of the plurality of patterns, the program according to claim 15.

17. Each of the plurality of states includes the following parameters: (c) a first power level, (d) a first duty cycle, the program according to claim 16.

18. The program according to claim 17, wherein at least one of the plurality of states has a first divided state and a second divided state that are alternately repeated at a first frequency, the parameters of the first divided state include the first power level, and the parameters of the second divided state include a second power level that is smaller than the first power level.

Images