Photosensitive resin composition, varnish, cured product, and semiconductor device

Abstract

This photosensitive resin composition comprises a polyimide (A1) that has a carboxy group in a structural unit thereof, a polyimide (A2) that is different from the polyimide (A1), and a polymerization initiator (B).

Description

Photosensitive resin composition, varnish, cured product, and semiconductor device

[0001] The present invention relates to a photosensitive resin composition, varnish, cured product, and semiconductor device.

[0002] Polyimide is widely used as a thin film for electronic materials such as semiconductor protective materials, insulating materials, and color filters due to its high mechanical strength, heat resistance, insulating properties, and solvent resistance.

[0003] Patent Document 1 describes a photosensitive adhesive composition that has excellent pattern-forming properties with an alkaline developer and sufficient re-adhesion after exposure, comprising (A) an alkali-soluble resin, (B) an epoxy resin, (C) a radiation-polymerizable compound, and (D) a photopolymerization initiator, wherein the glass transition temperature of the alkali-soluble resin (A) is 150°C or lower, and the epoxy resin (B) comprises (B1) a trifunctional or more functional component and (B2) a liquid component, and part or all of the liquid component (B2) may also be the trifunctional or more functional component (B1).

[0004] Japanese Patent Publication No. 2009-221453

[0005] This invention provides a photosensitive resin composition in which the balance between chemical resistance and elastic modulus after curing is improved.

[0006] The present inventors have discovered that a photosensitive resin composition comprising a polyimide (A1) having a carboxyl group in its constituent units, a polyimide (A2) different from polyimide (A1), and a polymerization initiator (B) can improve the balance between the chemical resistance and elastic modulus of the photosensitive resin composition after curing, and have completed the present invention.

[0007] In other words, the present invention provides the following photosensitive resin composition, varnish, cured product, and semiconductor device.

[0008] [1] A photosensitive resin composition comprising: a polyimide (A1) having a carboxyl group in its constituent units; a polyimide (A2) different from the polyimide (A1); and a polymerization initiator (B). [2] The photosensitive resin composition according to [1], wherein the polyimide (A1) comprises a constituent unit represented by the following general formula (1). (In general formula (1), X represents a constituent unit (X) which is a divalent organic group, and Y represents a constituent unit (Y) which is a tetravalent organic group, and the constituent unit (X) includes a constituent unit (X-1) which has a carboxyl group.) [3] The photosensitive resin composition according to [2], wherein the constituent unit (X-1) includes a constituent unit represented by the following general formula (x1). (In general formula (x1), Z １ (wherein represents a single bond, an oxygen atom, or a divalent organic group, and * represents a bond.) [4] The photosensitive resin composition according to [2] or [3], wherein the constituent unit (X-1) comprises a constituent unit represented by the following general formula (x2). (In the general formula (x2), * represents a bond.) [5] The photosensitive resin composition according to any one of [2] to [4], wherein the constituent unit (X-1) comprises a constituent unit derived from at least one diamine selected from the group consisting of 5,5'-methylenebis(2-aminobenzoic acid), 1,2-bis(4-amino-2-carboxyphenoxy)benzene, 1,3-bis(4-amino-2-carboxyphenoxy)benzene, 4,4'-diaminobiphenyl-2,2'-dicarboxylic acid, 5-amino-2-(4-aminophenoxy)benzoic acid, 3,5-diaminobenzoic acid, 3,5-diamino-4-methoxybenzoic acid, 3,5-bis(4-aminophenoxy)benzoic acid, N-bis(4-aminophenyl)-4-carboxyaniline, and 4,4'-diamino-N-(4-carboxyphenyl)benzanilide. [6] The photosensitive resin composition according to any one of [2] to [5], wherein the ratio of the constituent unit (X-1) in the constituent unit (X) is 1 mol% or more and 50 mol% or less. [7] The photosensitive resin composition according to any one of [2] to [6], wherein the constituent unit (X) further comprises a constituent unit represented by the following general formula (x3). (In general formula (x3), Z ２R represents an alkylene group. １ Each of these independently represents an alkyl group having 1 to 4 carbon atoms, and * represents a bond.) [8] The photosensitive resin composition according to [7], wherein the ratio of the constituent unit represented by the general formula (x3) in the constituent unit (X) is 50 mol% or more and 99 mol% or less. [9] The photosensitive resin composition according to any one of [2] to [8], wherein the constituent unit (Y) comprises a constituent unit represented by the following formula (y11). (In formula (y11), * represents a bond.)

[10] The photosensitive resin composition according to [9], wherein the ratio of the constituent unit represented by formula (y11) in the constituent unit (Y) is 50 mol% or more and 100 mol% or less.

[11] The photosensitive resin composition according to any one of [1] to

[10] , wherein the polyimide (A2) includes a constituent unit represented by the following general formula (2), and the constituent unit (X') in the general formula (2) includes at least one selected from the group consisting of a constituent unit represented by the following general formula (x5), a constituent unit represented by the following general formula (x6), and a constituent unit represented by the following general formula (x7). (In general formula (2), X' represents a divalent organic group (X'), and Y' represents a tetravalent organic group (Y').) (In general formula (x5), R ２ Each of the above independently represents an alkyl group having 1 to 4 carbon atoms, a and b independently represent integers from 0 to 3, and * represents a bond. (In general formula (x6), R ３ Each of the following independently represents an alkyl group having 1 to 4 carbon atoms, c and d independently represent integers from 0 to 4, and * represents a bond. (In general formula (x7), R ４ (Each of the following is an alkyl group having 1 to 4 carbon atoms, e and f each independently represent an integer from 0 to 4, and * represents a bond.)

[12] The photosensitive resin composition according to any one of [1] to

[11] , wherein the polyimide (A2) comprises a constituent unit represented by the following general formula (2), and the constituent unit (Y') in the general formula (2) comprises a constituent unit represented by the following general formula (y2). (In general formula (2), X' represents a divalent organic group (X'), and Y' represents a tetravalent organic group (Y').) (In general formula (y2), R ５ Each of these independently represents an alkyl group having 1 to 4 carbon atoms, Z ３(wherein represents a single bond or a divalent organic group, g and h each independently represent an integer from 0 to 4, and * represents a bond.)

[13] The photosensitive resin composition according to

[12] , wherein the ratio of the constituent unit represented by the general formula (y2) in the constituent unit (Y') is 10 mol% or more and 100 mol% or less.

[14] The photosensitive resin composition according to any one of [1] to

[13] , wherein the polyimide (A2) does not have a carboxyl group in the constituent unit.

[15] The photosensitive resin composition according to any one of [1] to

[14] , wherein when the total amount of the polyimide (A1) and the polyimide (A2) is 100 parts by mass, the content of the polyimide (A1) is 10 parts by mass or more and 90 parts by mass or less.

[16] The photosensitive resin composition according to

[15] , wherein when the total amount of the polyimide (A1) and the polyimide (A2) is 100 parts by mass, the content of the polyimide (A1) is 30 parts by mass or more and 70 parts by mass or less.

[17] The photosensitive resin composition according to any one of [1] to

[16] , further comprising a polyfunctional (meth)acrylate (C).

[18] The photosensitive resin composition according to

[17] , wherein the polyfunctional (meth)acrylate (C) comprises a trifunctional or more (meth)acrylate.

[19] The photosensitive resin composition according to

[18] , wherein the content of the trifunctional or more (meth)acrylate is 100 parts by mass or less per 100 parts by mass of the total amount of the polyimide (A1) and the polyimide (A2).

[20] The photosensitive resin composition according to any one of [1] to

[19] , further comprising an epoxy compound (D).

[21] A photosensitive resin composition according to any one of [1] to

[20] , further comprising a silane coupling agent (E).

[22] The photosensitive resin composition according to

[21] , wherein the silane coupling agent (E) comprises (meth)acrylsilane.

[23] The photosensitive resin composition according to any one of [1] to

[22] , wherein the storage modulus at 23°C of the cured product obtained by curing the photosensitive resin composition at 230°C for 2 hours, as measured by dynamic viscoelasticity measurement (DMA) in accordance with JIS K 7244-4:1999, is 3.3 GPa or more.

[24] The glass transition temperature (Tg) of a cured product obtained by curing the photosensitive resin composition at 230° C. for 2 hours, which is measured by dynamic viscoelasticity measurement (DMA) in accordance with JIS K 7244-4:1999. ＤＭＡ ) exceeds 319° C. The photosensitive resin composition according to any one of [1] to

[23] .

[25] The glass transition temperature (Tg) of a cured product obtained by curing the photosensitive resin composition at 230° C. for 2 hours, which is measured by thermomechanical analysis (TMA) in accordance with JIS K 7197:2012 ＴＭＡ ) exceeds 255° C. The photosensitive resin composition according to any one of [1] to

[24] .

[26] Let the glass transition temperature of a cured product obtained by curing the photosensitive resin composition at 230° C. for 2 hours, which is measured by dynamic viscoelasticity measurement (DMA) in accordance with JIS K 7244-4:1999, be Tg ＤＭＡ and let the glass transition temperature of a cured product obtained by curing the photosensitive resin composition at 230° C. for 2 hours, which is measured by thermomechanical analysis (TMA) in accordance with JIS K 7197:2012, be Tg ＴＭＡ , then Tg ＤＭＡ -Tg ＴＭＡA photosensitive resin composition according to any one of [1] to

[25] , wherein the temperature is 25°C or higher.

[27] A photosensitive resin composition according to any one of [1] to

[26] , wherein the mean coefficient of linear expansion (CTE) in the range of 50°C to 100°C is 60 ppm / °C or less of the cured product obtained by curing the photosensitive resin composition at 230°C for 2 hours, as measured by thermomechanical analysis (TMA) in accordance with JIS K 7197:2012.

[28] A photosensitive resin composition according to any one of [1] to

[27] , wherein the elongation at break at 23°C is greater than 23% of the cured product obtained by curing the photosensitive resin composition at 230°C for 2 hours, as obtained by the following method. (Method) A test piece (50 mm × 7 mm × 10 μm thick) is cut from the cured product. In accordance with JIS K 7197:2012, the elongation at break from the initial position to the breaking point of the test specimen is measured using a thermomechanical analyzer under air atmosphere, tensile mode, chuck distance of 20 mm, tensile speed of 5 mm / min, and 23°C. The average value obtained from measurements of 10 test specimens is taken as the elongation at break.

[29] A photosensitive resin composition according to any one of [1] to

[28] , wherein the Δt obtained by the following method is greater than -2.0 μm. (Method) The photosensitive resin composition is spin-coated onto an 8-inch silicon wafer, and then heated at 110°C for 3 minutes to dry the photosensitive resin composition. The spin-coating is performed so that the film thickness after drying is 10 μm. Then, 600 mJ / cm is applied using a high-pressure mercury lamp. ２Expose, then heat at 230° C. for 2 hours in a nitrogen atmosphere to cure. Using a dicing saw, cut out a test piece with a silicon wafer (20 mm × 20 mm × 10 μm thick). Immerse the test piece in dimethyl sulfoxide containing 2.38% by mass of tetramethylammonium hydroxide (TMAH) at 50° C. for 20 minutes. Then, after washing with isopropanol and drying by air blowing, heat on a 170° C. hot plate for 5 minutes to obtain the test piece with a silicon wafer after the chemical resistance test. Using an optical interference film thickness measuring device, measure the film thickness t of the test piece after the chemical resistance test, and calculate the film thickness difference Δt before and after the chemical resistance test based on the following formula. Δt [μm] = t [μm] - 10 μm

[30] The photosensitive resin composition according to any one of [1] to

[29] , which is used in a semiconductor device.

[31] A varnish comprising the photosensitive resin composition according to any one of [1] to

[30] and a solvent.

[32] A cured product of the photosensitive resin composition according to any one of [1] to

[30] .

[33] A semiconductor device comprising the cured product according to

[32] .

[34] The semiconductor device according to

[33] , comprising an interlayer insulating film, a resin film containing the cured product on the interlayer insulating film, and a rewiring embedded in the resin film.

[0009] According to the present invention, a photosensitive resin composition with an improved balance between chemical resistance after curing and elastic modulus can be provided.

[0010] It is a schematic cross-sectional view schematically showing an example of the structure of the semiconductor device of the present embodiment.

[0011] Hereinafter, embodiments of the present invention will be described. In the present specification, "A to B" indicating a numerical range means from A to B inclusive, unless otherwise specified. In the present specification, the notation "(meth)acrylate" represents a concept that includes both acrylate and methacrylate. The same applies to similar notations such as "(meth)acrylic". In addition, the drawings are schematic diagrams and do not correspond to actual dimensional ratios.

[0012] (Photosensitive resin composition) The photosensitive resin composition of the present embodiment includes a polyimide (A1) having a carboxy group in a structural unit thereof, a polyimide (A2) different from the polyimide (A1), and a polymerization initiator (B). The present inventors have found that a photosensitive resin composition including a polyimide (A1) having a carboxy group in a structural unit thereof, a polyimide (A2) different from the polyimide (A1), and a polymerization initiator (B) can improve the balance between chemical resistance and elastic modulus after curing of the photosensitive resin composition. According to the photosensitive resin composition of the present embodiment, the balance between chemical resistance and elastic modulus after curing can be improved. Although such a mechanism is not necessarily clear, according to studies by the present inventors, it is considered that the chemical resistance after curing can be improved when the photosensitive resin composition contains the polyimide (A1).

[0013] (Polyimide (A1)) In the present embodiment, the polyimide (A1) may include a structural unit represented by the following general formula (1).

[0014]

[0015] In general formula (1), X represents a structural unit (X) that is a divalent organic group, Y represents a structural unit (Y) that is a tetravalent organic group, and the structural unit (X) includes a structural unit (X-1) having a carboxy group.

[0016] The structural unit (X-1) preferably includes a structural unit represented by the following general formula (x1). This allows further improvement of the chemical resistance after curing of the photosensitive resin composition.

[0017]

[0018] In general formula (x1), Z １ represents a single bond, an oxygen atom, or a divalent organic group, and * represents a bonding hand.

[0019] Z １ may be a single bond or a divalent organic group, may be a single bond or an alkylene group, may be a single bond or a methylene group, and may be a methylene group.

[0020] The constituent unit represented by the general formula (x1) may include, for example, the constituent unit represented by the following formula (x11) (a constituent unit derived from 5,5'-methylenebis(2-aminobenzoic acid)).

[0021]

[0022] The constituent unit (X-1) may include the constituent unit represented by the following general formula (x2).

[0023]

[0024] In the general formula (x²), * represents a bond.

[0025] The constituent unit represented by the general formula (x2) may include, for example, the constituent unit represented by the following formula (x21) (a constituent unit derived from 3,5-diaminobenzoic acid).

[0026]

[0027] The constituent unit (X-1) is derived from at least one diamine selected from the group consisting of 5,5'-methylenebis(2-aminobenzoic acid), 1,2-bis(4-amino-2-carboxyphenoxy)benzene, 1,3-bis(4-amino-2-carboxyphenoxy)benzene, 4,4'-diaminobiphenyl-2,2'-dicarboxylic acid, 5-amino-2-(4-aminophenoxy)benzoic acid, 3,5-diaminobenzoic acid, 3,5-diamino-4-methoxybenzoic acid, 3,5-bis(4-aminophenoxy)benzoic acid, N-bis(4-aminophenyl)-4-carboxyaniline, and 4,4'-diamino-N-(4-carboxyphenyl)benzanilide. It may contain constituent units, and may contain constituent units derived from at least one diamine selected from the group consisting of 5,5'-methylenebis(2-aminobenzoic acid), 1,2-bis(4-amino-2-carboxyphenoxy)benzene, 1,3-bis(4-amino-2-carboxyphenoxy)benzene, 4,4'-diaminobiphenyl-2,2'-dicarboxylic acid, and 3,5-diaminobenzoic acid; it may contain constituent units derived from at least one diamine selected from the group consisting of 5,5'-methylenebis(2-aminobenzoic acid) and 3,5-diaminobenzoic acid; and may contain constituent units derived from 5,5'-methylenebis(2-aminobenzoic acid).

[0028] The ratio of constituent unit (X-1) to constituent unit (X) is preferably 1 mol% to 50 mol%, more preferably 2 mol% to 40 mol%, and even more preferably 5 mol% to 30 mol%. By setting the ratio of constituent unit (X-1) to constituent unit (X) within the above range, the chemical resistance of the photosensitive resin composition after curing can be further improved, and the balance with other physical properties can be improved.

[0029] The constituent unit (X) preferably further comprises a constituent unit represented by the following general formula (x3). This improves the tensile elongation of the photosensitive resin composition after curing and the solvent solubility of the photosensitive resin composition.

[0030]

[0031] In general formula (x3), Z ２R represents an alkylene group. １ Each of these independently represents an alkyl group having 1 to 4 carbon atoms, and * represents a bond.

[0032] Z ２ It may be a methylene group.

[0033] R １ It may contain at least one group selected from the group consisting of methyl groups and ethyl groups.

[0034] The ratio of the constituent unit represented by the general formula (x3) in the constituent unit (X) is preferably 50 mol% to 99 mol%, more preferably 60 mol% to 98 mol%, and even more preferably 70 mol% to 95 mol%. By setting the ratio of the constituent unit represented by the general formula (x3) in the constituent unit (X) within the above range, the balance between the tensile elongation after curing and other physical properties of the photosensitive resin composition can be improved.

[0035] The constituent unit (X) preferably further comprises a constituent unit represented by the following general formula (x4). This improves the solvent solubility of polyimide (A1).

[0036]

[0037] In the general formula (x4), * represents a bond.

[0038] The constituent unit represented by the general formula (x4) may include, for example, the constituent unit represented by the following formula (x41) (a constituent unit derived from 1,3-bis(3-aminophenoxy)benzene).

[0039]

[0040] The ratio of the constituent unit represented by the general formula (x4) in the constituent unit (X) may be 1 mol% or more and 25 mol% or less, 2 mol% or more and 20 mol% or less, or 5 mol% or more and 15 mol% or less.

[0041] The constituent unit (Y) preferably includes a constituent unit represented by the following formula (y11). This improves the tensile elongation of the photosensitive resin composition after curing.

[0042]

[0043] In equation (y11), * represents a bond.

[0044] The ratio of the constituent units represented by formula (y11) in the constituent unit (Y) is preferably 50 mol% to 100 mol%, more preferably 75 mol% to 100 mol%, and even more preferably 90 mol% to 100 mol%. By setting the ratio of the constituent units represented by formula (y11) in the constituent unit (Y) within the above range, the tensile elongation of the photosensitive resin composition after curing can be improved.

[0045] When the total amount of polyimide (A1) and polyimide (A2) is 100 parts by mass, the content of polyimide (A1) is preferably 10 parts by mass or more and 90 parts by mass or less, more preferably 20 parts by mass or more and 80 parts by mass or less, even more preferably 25 parts by mass or more and 75 parts by mass or less, and even more preferably 30 parts by mass or more and 70 parts by mass or less. By setting the content of polyimide (A1) within the above range, the balance between the chemical resistance and elastic modulus of the photosensitive resin composition after curing can be further improved.

[0046] (Polyimide (A2)) Polyimide (A2) is a different polyimide from polyimide (A1). Polyimide (A2) does not need to have carboxyl groups in its constituent units.

[0047] In this embodiment, polyimide (A2) may include constituent units represented by the following general formula (2).

[0048]

[0049] In general formula (2), X' represents a divalent organic group (X'), and Y' represents a tetravalent organic group (Y').

[0050] The constituent unit (X') in general formula (2) preferably includes at least one selected from the group consisting of the constituent unit represented by the following general formula (x5), the constituent unit represented by the following general formula (x6), and the constituent unit represented by the following general formula (x7). This makes it possible to further improve the elastic modulus of the photosensitive resin composition after curing and to improve the solvent solubility of the photosensitive resin composition. The constituent unit (X') may also include at least one selected from the group consisting of the constituent unit represented by the following general formula (x5) and the constituent unit represented by the following general formula (x6).

[0051]

[0052] In general formula (x5), R ２ Each of the above independently represents an alkyl group having 1 to 4 carbon atoms, a and b each independently represent an integer from 0 to 3, and * represents a bond.

[0053]

[0054] In general formula (x6), R ３ Each of the following independently represents an alkyl group having 1 to 4 carbon atoms, c and d independently represent integers from 0 to 4, and * represents a bond.

[0055]

[0056] In general formula (x7), R ４ Each of the following independently represents an alkyl group having 1 to 4 carbon atoms, e and f independently represent integers from 0 to 4, and * represents a bond.

[0057] In general formula (x5), R ２ Each of these independently represents an alkyl group having 1 to 4 carbon atoms. ２ It may contain at least one group selected from the group consisting of a methyl group, an ethyl group, an isopropyl group, an n-propyl group, and a tert-butyl group, or it may contain at least one group selected from the group consisting of a methyl group and an ethyl group, or it may contain a methyl group. In general formula (x5), a and b each independently represent an integer from 0 to 3. a and b each independently may be 0 or 1, or they may be 1.

[0058] The constituent unit represented by the general formula (x5) may include, for example, the constituent unit represented by the following formula (x51).

[0059]

[0060] The ratio of the constituent unit represented by the general formula (x5) in the constituent unit (X') may be 10 mol% or more and 100 mol% or less, 20 mol% or more and 95 mol% or less, or 30 mol% or more and 90 mol% or less.

[0061] In general formula (x6), R ３ Each of these independently represents an alkyl group having 1 to 4 carbon atoms. ３ c may contain at least one group selected from the group consisting of methyl, ethyl, isopropyl, n-propyl, and tert-butyl groups, or it may contain at least one group selected from the group consisting of methyl and ethyl groups, or it may contain a methyl group. In general formula (x6), c and d each independently represent an integer from 0 to 4. c and d each independently may be an integer from 0 to 2, or they may be 0 or 1, or they may be 1.

[0062] The constituent unit represented by the general formula (x6) may include, for example, at least one selected from the group consisting of the constituent unit represented by the following formula (x61) and the constituent unit represented by the following formula (x62).

[0063]

[0064]

[0065] The ratio of the constituent unit represented by the general formula (x6) in the constituent unit (X') may be 5 mol% or more and 90 mol% or less, 5 mol% or more and 80 mol% or less, or 10 mol% or more and 70 mol% or less.

[0066] In general formula (x7), R ４ Each of these independently represents an alkyl group having 1 to 4 carbon atoms. ４It may contain at least one group selected from the group consisting of methyl, ethyl, isopropyl, n-propyl, and tert-butyl groups, or it may contain at least one group selected from the group consisting of methyl and ethyl groups, or it may contain a methyl group. In general formula (x7), e and f each independently represent an integer from 0 to 4. e and f each independently may be 0 or 1, or they may be 0.

[0067] The constituent unit represented by the general formula (x7) may include, for example, the constituent unit represented by the following formula (x71).

[0068]

[0069] The constituent unit (X') preferably includes a constituent unit represented by the following formula (x81). This improves the tensile elongation of the photosensitive resin composition after curing.

[0070]

[0071] In equation (x81), * represents a bond.

[0072] The constituent unit (Y') in general formula (2) preferably includes a constituent unit represented by the following general formula (y2). This allows for a further improvement in the elastic modulus of the photosensitive resin composition after curing. It also improves the tensile elongation of the photosensitive resin composition after curing and reduces the mean coefficient of linear expansion (CTE).

[0073]

[0074] In general formula (y2), R ５ Each of these independently represents an alkyl group having 1 to 4 carbon atoms, Z ３ represents a single bond or a divalent organic group, g and h each independently represent an integer from 0 to 4, and * represents a bond.

[0075] In general formula (y2), R ５ Each of these independently represents an alkyl group having 1 to 4 carbon atoms. ５Preferably, it comprises at least one group selected from the group consisting of methyl, ethyl, isopropyl, n-propyl, and tert-butyl groups, more preferably at least one group selected from the group consisting of methyl, isopropyl, and tert-butyl groups, and even more preferably a methyl group. This makes it possible to reduce the mean coefficient of linear expansion (CTE) of the photosensitive resin composition after curing.

[0076] In the general formula (y²), g and h each independently represent integers from 0 to 4. g and h may also independently be integers from 0 to 3, or they may be 3.

[0077] In general formula (y2), Z ３ Z represents a single bond or a divalent organic group. ３ Preferably, the component is a single bond, a cyclohexane-1,1-diyl group, a phenylene group, or a biphenyl-4,4'-diyl group, more preferably a single bond or a cyclohexane-1,1-diyl group, and even more preferably a single bond. This reduces the mean coefficient of linear expansion (CTE) of the photosensitive resin composition after curing.

[0078] The constituent unit represented by the general formula (y2) preferably includes the constituent unit represented by the following formula (y21). This allows for a further improvement in the elastic modulus of the photosensitive resin composition after curing. It also improves the tensile elongation of the photosensitive resin composition after curing and reduces the mean coefficient of linear expansion (CTE).

[0079]

[0080] The ratio of the constituent unit represented by the general formula (y2) in the constituent unit (Y') is preferably 10 mol% to 100 mol%, more preferably 20 mol% to 95 mol%, and even more preferably 30 mol% to 90 mol%. By setting the ratio of the constituent unit represented by the general formula (y2) in the constituent unit (Y') within the above range, the elastic modulus of the photosensitive resin composition after curing can be further improved. In addition, the tensile elongation of the photosensitive resin composition after curing can be improved, the mean coefficient of linear expansion (CTE) can be reduced, and the balance with other physical properties can be improved.

[0081] The constituent unit (Y') preferably includes a constituent unit represented by the following general formula (y3). This improves the tensile elongation of the photosensitive resin composition after curing and the solvent solubility of the photosensitive resin composition.

[0082]

[0083] In general formula (y3), Z ４ This is a single bond, -C(=O)-, a divalent group represented by the following formula, or -SO ２ The dash (-) represents a hyphen (*), and the asterisk (*) represents a combination.

[0084]

[0085] In the above formula, * represents a bond.

[0086] Z ４ This may be a single bond, a -C(=O)-, or a divalent group represented by the above formula, or it may be a -C(=O)- or a divalent group represented by the above formula.

[0087] The constituent unit represented by general formula (y3) may include, for example, at least one selected from the group consisting of the constituent unit represented by formula (y31), the constituent unit represented by formula (y32), and the constituent unit represented by formula (y33), or it may include at least one selected from the group consisting of the constituent unit represented by formula (y31) and the constituent unit represented by formula (y33). The constituent unit represented by general formula (y3) preferably includes the constituent unit represented by formula (y33). This makes it possible to improve the solvent solubility of the photosensitive resin composition.

[0088]

[0089]

[0090]

[0091] The ratio of the constituent unit represented by the general formula (y3) in the constituent unit (Y') is preferably 5 mol% to 90 mol%, more preferably 10 mol% to 80 mol%, and even more preferably 15 mol% to 70 mol%. By setting the ratio of the constituent unit represented by the general formula (y3) in the constituent unit (Y') within the above range, the balance between the tensile elongation after curing of the photosensitive resin composition and other physical properties can be improved. Furthermore, the solvent solubility of the photosensitive resin composition can be improved.

[0092] (Polymerization initiator (B)) The photosensitive resin composition of this embodiment contains polymerization initiator (B).

[0093] The content of polymerization initiator (B) per 100 parts by mass of polyimide (A1) and polyimide (A2) may be 1 part by mass or more and 50 parts by mass or less, 5 parts by mass or more and 40 parts by mass or less, or 10 parts by mass or more and 30 parts by mass or less.

[0094] The polymerization initiator (B) preferably includes a photoradical generator. This allows the photosensitive resin composition to be cured by exposure.

[0095] Photoradical generators include oxime ester-based photoradical generators such as 1-[4-(phenylthio)phenyl]octane-1,2-dione=2-(O-benzoyl oxime) and 1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazole-3-yl]ethanone 1-(O-acetyl oxime); alkylphenone-based photoradical generators such as 2,2-dimethoxy-2-phenylacetophenone, 1-hydroxycyclohexylphenyl ketone, 2-hydroxy-2-methylpropiophenone, 2-hydroxy-4'-(2-hydroxyethoxy)-2-methylpropiophenone, 2-methyl-4'-(methylthio)-2-morpholinopropiophenone, and 2-benzyl-2-(dimethylamino)-4'-morpholinobtyrophenone; and, It may contain at least one selected from the group consisting of benzophenone and benzophenone-based photoradical generators such as 4,4'-bis(dimethylamino)benzophenone, and may also contain an oxime ester-based photoradical generator, and may also contain 1-[4-(phenylthio)phenyl]octane-1,2-dione=2-(O-benzoyloxime).

[0096] The amount of photoradical generator per 100 parts by mass of polyimide (A1) and polyimide (A2) may be 1 part by mass or more and 30 parts by mass or 5 parts by mass or more and 20 parts by mass.

[0097] The polymerization initiator (B) preferably includes a thermal radical generator. This allows the photosensitive resin composition to be cured by heating.

[0098] The thermal radical generator may contain organic peroxides such as dicumyl peroxide, 2,5-bis(tert-butylperoxy)-2,5-dimethylhexane, and tert-butyl=2-ethylperoxyhexanoate, and may also contain dicumyl peroxide.

[0099] The amount of the thermal radical generator per 100 parts by mass of polyimide (A1) and polyimide (A2) may be 1 part by mass or more and 30 parts by mass or 5 parts by mass or more and 20 parts by mass.

[0100] (Polyfunctional (meth)acrylate (C)) The photosensitive resin composition of this embodiment preferably further comprises polyfunctional (meth)acrylate (C). This improves the curing properties of the photosensitive resin composition.

[0101] The polyfunctional (meth)acrylate (C) includes, for example, at least one selected from the group consisting of: difunctional (meth)acrylates such as polyalkylene glycol di(meth)acrylate and alkyl di(meth)acrylate; trifunctional (meth)acrylates such as tris(2-(meth)acryloyloxyethyl) isocyanurate, optionally alkoxylated pentaerythritol tri(meth)acrylate, optionally alkoxylated trimethylolpropane tri(meth)acrylate and alkoxylated glycerin tri(meth)acrylate; tetrafunctional (meth)acrylates such as optionally alkoxylated pentaerythritol tetra(meth)acrylate and optionally alkoxylated ditrimethylolpropane tetra(meth)acrylate; and quintafunctional or more (meth)acrylates such as optionally alkoxylated dipentaerythritol penta(meth)acrylate and optionally alkoxylated dipentaerythritol hexa(meth)acrylate.

[0102] The content of polyfunctional (meth)acrylate (C) per 100 parts by mass of polyimide (A1) and polyimide (A2) is preferably 10 parts by mass or more and 150 parts by mass or less, more preferably 15 parts by mass or more and 100 parts by mass or less, and even more preferably 20 parts by mass or more and 75 parts by mass or less. By setting the content of polyfunctional (meth)acrylate (C) per 100 parts by mass of polyimide (A1) and polyimide (A2) to the above range, the balance between the photosensitivity of the photosensitive resin composition and the mechanical properties of the photosensitive resin composition after curing can be improved.

[0103] The polyfunctional (meth)acrylate (C) preferably comprises a trifunctional (meth)acrylate, more preferably a pentafunctional (meth)acrylate, and even more preferably at least one selected from the group consisting of dipentaerythritol penta(meth)acrylate and dipentaerythritol hexa(meth)acrylate. This further improves the chemical resistance of the photosensitive resin composition after curing. It also improves the heat resistance of the photosensitive resin composition after curing and reduces the mean coefficient of linear expansion (CTE).

[0104] The content of trifunctional or more (meth)acrylate per 100 parts by mass of polyimide (A1) and polyimide (A2) is preferably more than 0 parts by mass and 100 parts by mass or less, more preferably 5 parts by mass or more and 80 parts by mass or less, even more preferably 10 parts by mass or more and 70 parts by mass or less, even more preferably 15 parts by mass or more and 65 parts by mass or less, and even more preferably 20 parts by mass or more and 60 parts by mass or less. By setting the content of trifunctional or more (meth)acrylate per 100 parts by mass of polyimide (A1) and polyimide (A2) to the above range, the chemical resistance of the photosensitive resin composition after curing can be further improved. In addition, the heat resistance of the photosensitive resin composition after curing can be improved, the mean coefficient of linear expansion (CTE) can be reduced, and the balance with other physical properties can be improved.

[0105] The content of trifunctional or more (meth)acrylates per 100 parts by mass of polyfunctional (meth)acrylate (C) is preferably 30 parts by mass or more and 100 parts by mass or less, more preferably 40 parts by mass or more and 100 parts by mass or less, and even more preferably 50 parts by mass or more and 100 parts by mass or less. By setting the content of trifunctional or more (meth)acrylates per 100 parts by mass of polyfunctional (meth)acrylate (C) to the above range, the chemical resistance of the photosensitive resin composition after curing can be further improved. In addition, the heat resistance of the photosensitive resin composition after curing can be improved, the mean coefficient of linear expansion (CTE) can be reduced, and the balance with other physical properties can be improved.

[0106] The polyfunctional (meth)acrylate (C) preferably comprises a bifunctional (meth)acrylate, more preferably a polyalkylene glycol di(meth)acrylate, even more preferably a polyethylene glycol di(meth)acrylate, and even more preferably a triethylene glycol di(meth)acrylate. This improves the tensile elongation of the photosensitive resin composition after curing.

[0107] The polyfunctional (meth)acrylate (C) preferably includes a (meth)acrylate having an isocyanurate skeleton. This improves the tensile elongation after curing of the photosensitive resin composition and the solvent solubility of the photosensitive resin composition. The (meth)acrylate having an isocyanurate skeleton may include, for example, at least one selected from the group consisting of tris(2-(meth)acryloyloxyethyl) isocyanurate and 2-hydroxyethylbis(2-(meth)acryloyloxyethyl) isocyanurate, and may also include tris(2-(meth)acryloyloxyethyl) isocyanurate.

[0108] (Epoxy compound (D)) The photosensitive resin composition of this embodiment preferably further comprises epoxy compound (D). Epoxy compound (D) is a compound having epoxy groups. It is believed that the epoxy groups of epoxy compound (D) react with the acid anhydride groups, which are terminal groups of polyimide (A1) and polyimide (A2), to form ester bonds, thereby improving the tensile elongation of the photosensitive resin composition after curing.

[0109] The content of epoxy compound (D) per 100 parts by mass of polyimide (A1) and polyimide (A2) is preferably 0.1 parts by mass or more and 25 parts by mass or less, more preferably 0.5 parts by mass or more and 20 parts by mass or less, and even more preferably 1 part by mass or more and 15 parts by mass or less. By setting the content of epoxy compound (D) per 100 parts by mass of polyimide (A1) and polyimide (A2) to the above range, the balance between the tensile elongation after curing and other physical properties of the photosensitive resin composition can be improved.

[0110] The epoxy compound (D) preferably includes an epoxy compound having a (meth)acryloyl group. It is believed that the epoxy compound having a (meth)acryloyl group polymerizes with the polyfunctional (meth)acrylate (C), thereby crosslinking the polyfunctional (meth)acrylate (C) with polyimide (A1) and polyimide (A2). This is believed to improve the mechanical properties of the photosensitive resin composition after curing. The epoxy compound having a (meth)acryloyl group may include, for example, at least one selected from the group consisting of 4-hydroxybutyl (meth)acrylate glycidyl ether, glycidyl (meth)acrylate, and (3,4-epoxycyclohexyl)methyl (meth)acrylate, and may also include 4-hydroxybutyl (meth)acrylate glycidyl ether.

[0111] (Silane coupling agent (E)) The photosensitive resin composition of this embodiment preferably further comprises a silane coupling agent (E). This improves the solvent solubility of the photosensitive resin composition. In particular, if the photosensitive resin composition of this embodiment further comprises a polyfunctional (meth)acrylate (C), the compatibility of polyimide (A1), polyimide (A2), and polyfunctional (meth)acrylate (C) can be improved.

[0112] Silane coupling agents (E) include, for example, silane coupling agents having a cyclic anhydride structure such as 3-trimethoxysilylpropyl succinic anhydride, 3-triethoxysilylpropyl succinic anhydride, and 3-dimethylmethoxysilylpropyl succinic anhydride; (meth)acryloylsilanes such as 3-(meth)acryloyloxypropyltrimethoxysilane, 3-(meth)acryloyloxypropylmethyldimethoxysilane, 3-(meth)acryloyloxypropylmethyldiethoxysilane, and 3-(meth)acryloyloxypropyltriethoxysilane; epoxysilanes such as 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, and 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane; It comprises at least one selected from the group consisting of aminosilanes such as N-2-(aminoethyl)-3-aminopropylmethyldimethoxysilane, N-2-(aminoethyl)-3-aminopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, and 3-triethoxysilyl-N-(1,3-dimethylbutylidene)propylamine; mercaptosilanes such as 3-mercaptopropylmethyldimethoxysilane and 3-mercaptopropyltrimethoxysilane; vinylsilanes such as vinyltrimethoxysilane and vinyltriethoxysilane; and ureidosilanes such as 3-ureidopropyltrialkoxysilane.

[0113] The content of the silane coupling agent (E) per 100 parts by mass of the total of polyimide (A1) and polyimide (A2) is preferably 0.1 parts by mass or more and 10 parts by mass or less, more preferably 1 part by mass or more and 8 parts by mass or less, and even more preferably 2 parts by mass or more and 7 parts by mass or less. By setting the content of the silane coupling agent (E) per 100 parts by mass of the total of polyimide (A1) and polyimide (A2) to the above range, the solvent solubility of the photosensitive resin composition can be improved. In particular, if the photosensitive resin composition of this embodiment further contains a polyfunctional (meth)acrylate (C), the compatibility of polyimide (A1), polyimide (A2), and polyfunctional (meth)acrylate (C) can be improved.

[0114] The silane coupling agent (E) preferably includes a silane coupling agent having a cyclic anhydride structure. It is believed that the cyclic anhydride structure reacts with the amino groups that are terminal groups of polyimide (A1) and polyimide (A2), or with the epoxy compound (D), thereby improving the adhesion between the cured photosensitive resin composition and the adherend (e.g., substrate). The silane coupling agent having a cyclic anhydride structure may include at least one selected from the group consisting of 3-trimethoxysilylpropyl succinic anhydride, 3-triethoxysilylpropyl succinic anhydride, and 3-dimethylmethoxysilylpropyl succinic anhydride, and may also include 3-trimethoxysilylpropyl succinic anhydride.

[0115] The silane coupling agent (E) preferably contains (meth)acrylsilane. In particular, if the photosensitive resin composition of this embodiment further contains a polyfunctional (meth)acrylate (C), the (meth)acrylsilane can polymerize with the polyfunctional (meth)acrylate (C) to improve the compatibility of polyimide (A1), polyimide (A2), and polyfunctional (meth)acrylate (C). The (meth)acrylsilane may contain at least one selected from the group consisting of 3-(meth)acryloyloxypropyltrimethoxysilane, 3-(meth)acryloyloxypropylmethyldimethoxysilane, 3-(meth)acryloyloxypropylmethyldiethoxysilane, and 3-(meth)acryloyloxypropyltriethoxysilane, and may also contain 3-(meth)acryloyloxypropyltrimethoxysilane.

[0116] The content of (meth)acrylsilane per 100 parts by mass of the total of polyimide (A1) and polyimide (A2) is preferably 0.1 parts by mass or more and 10 parts by mass or less, more preferably 0.5 parts by mass or more and 7.5 parts by mass or less, and even more preferably 1 part by mass or more and 5 parts by mass or less. When the photosensitive resin composition of this embodiment further contains a polyfunctional (meth)acrylate (C), the compatibility of polyimide (A1), polyimide (A2), and polyfunctional (meth)acrylate (C) can be improved by setting the content of (meth)acrylsilane per 100 parts by mass of the total of polyimide (A1) and polyimide (A2) within the above range.

[0117] (Adhesion enhancer) The photosensitive resin composition of this embodiment preferably further contains an adhesion enhancer. This improves the adhesion between the cured photosensitive resin composition and the adherend (e.g., a substrate).

[0118] The adhesion aid includes, for example, a nitrogen atom-containing heteroaromatic compound having at least one group selected from the group consisting of (1H-tetrazol-5-yl)amino group, 1-(1H-tetrazol-5-yl)methyl-amino group, 3-(1H-tetrazol-5-yl)benz-amino group, 1-(5-1H-triazoyl)methylamino group, 3-(1H-pyrazoyl)amino group, 4-(1H-pyrazoyl)amino group, 5-(1H-pyrazoyl)amino group, 1-(3-1H-pyrazoyl)methylamino group, 1-(4-1H-pyrazoyl)methylamino group, and 1-(5-1H-pyrazoyl)methylamino group.

[0119] The content of the adhesion aid per 100 parts by mass of the total polyimide (A1) and polyimide (A2) is preferably 0.1 parts by mass or more and 10 parts by mass or less, more preferably 1 part by mass or more and 5 parts by mass or less. By setting the content of the adhesion aid per 100 parts by mass of the total polyimide (A1) and polyimide (A2) within the above range, the adhesion between the cured photosensitive resin composition and the adherend (e.g., substrate) can be improved.

[0120] (Curing Catalyst) The photosensitive resin composition of this embodiment preferably further comprises a curing catalyst. This can accelerate the curing reaction of the photosensitive resin composition. In particular, the photosensitive resin composition of this embodiment preferably further comprises an epoxy compound (D) and a curing catalyst. By including a curing catalyst in the photosensitive resin composition, the reaction between the epoxy group of the epoxy compound (D) and the acid anhydride groups which are terminal groups of polyimide (A1) and polyimide (A2) proceeds sufficiently, and the tensile elongation of the photosensitive resin composition after curing can be improved.

[0121] The curing catalyst may contain at least one selected from the group consisting of phosphonium salts such as tetraphenylphosphonium-4,4'-sulfonyldiphenolate, tetraphenylphosphonium-tetraphenylborate, and tetraphenylphosphonium bromide; phosphines such as triphenylphosphine and methyldiphenylphosphine; tertiary amines and tertiary amine salts such as 1,8-diazabicyclo[5.4.0]-7-undecene, 1,5-diazabicyclo[4.3.0]-5-nonene, and 2,4,6-tris(dimethylaminomethyl)phenol; and imidazoles such as 1-(2-cyanoethyl)-2-ethyl-4-methylimidazole and 2-ethyl-4-methylimidazole, and may contain phosphonium salts, and may also contain tetraphenylphosphonium-4,4'-sulfonyldiphenolate.

[0122] The content of the curing catalyst relative to 100 parts by mass of polyimide (A1) and polyimide (A2) may be 1 part by mass or more and 50 parts by mass or less, or 5 parts by mass or more and 30 parts by mass or less.

[0123] (Antioxidant) The photosensitive resin composition of this embodiment preferably further contains an antioxidant. This helps to suppress the deterioration of the photosensitive resin composition.

[0124] The antioxidant includes, for example, at least one selected from the group consisting of hindered phenol antioxidants such as tris(4-tert-butyl-3-hydroxy-2,6-dimethylbenzyl)isocyanuric acid and 2,2'-methylenebis(6-tert-butyl-4-ethylphenol); and thioether antioxidants such as pentaerythritol tetrakis[3-laurylthiopropionate].

[0125] The amount of antioxidant per 100 parts by mass of polyimide (A1) and polyimide (A2) may be 0.1 parts by mass or more and 10 parts by mass or less, or 1 part by mass or more and 5 parts by mass or less.

[0126] (Surfactant) The photosensitive resin composition of this embodiment preferably further contains a surfactant. This improves the applicability of the photosensitive resin composition.

[0127] The surfactant includes, for example, silicone-based surfactants such as polyether-modified siloxanes, polyester-modified siloxanes, and aralkyl-modified siloxanes; polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, and polyoxyethylene oleyl ether; polyoxyethylene aryl ethers such as polyoxyethylene octylphenyl ether and polyoxyethylene nonylphenyl ether; and at least one selected from the group consisting of fluorine-based surfactants.

[0128] The amount of surfactant per 100 parts by mass of polyimide (A1) and polyimide (A2) may be 0.01 parts by mass or more and 1 part by mass or less, or 0.05 parts by mass or more and 0.5 parts by mass or less.

[0129] (Physical properties of the photosensitive resin composition) The physical properties of the photosensitive resin composition of this embodiment will be described below.

[0130] According to JIS K 7244-4:1999, the storage modulus at 23°C of a cured product obtained by curing a photosensitive resin composition at 230°C for 2 hours, as measured by dynamic viscoelasticity measurement (DMA), is preferably 3.3 GPa or more and 20.0 GPa or less, more preferably 3.4 GPa or more and 15.0 GPa or less, even more preferably 3.5 GPa or more and 10.0 GPa or less, and even more preferably 3.8 GPa or more and 8.0 GPa or less. Having the storage modulus at 23°C within the above range improves the rigidity and strength of the photosensitive resin composition after curing, and suppresses the occurrence of cracks when manufacturing semiconductor devices.

[0131] The glass transition temperature (Tg) of a cured product obtained by curing a photosensitive resin composition at 230°C for 2 hours, as measured by dynamic viscoelasticity measurement (DMA) in accordance with JIS K 7244-4:1999, is determined. ＤＭＡ The temperature is preferably more than 319°C and 500°C or less, more preferably 320°C to 475°C, and even more preferably 325°C to 450°C. In this embodiment, Tg ＤＭＡ This is thought to mainly reflect the glass transition temperatures of polyimide (A1) and polyimide (A2). Tg ＤＭＡ Because the above range is maintained, it is possible to manufacture semiconductor devices with small dimensional changes during high-temperature reflow processing and good connection reliability.

[0132] The glass transition temperature (Tg) of a cured product obtained by curing a photosensitive resin composition at 230°C for 2 hours is measured by thermomechanical analysis (TMA) in accordance with JIS K 7197:2012. ＴＭＡ The temperature is preferably more than 255°C and 500°C or less, more preferably 265°C to 475°C, and even more preferably 270°C to 450°C. In this embodiment, Tg ＴＭＡ This is thought to mainly reflect the glass transition temperature of the cured polyfunctional (meth)acrylate (C). ＴＭＡ By keeping the above range, it is possible to manufacture semiconductor devices with minimal film thickness changes due to chemical treatment.

[0133] In accordance with JIS K 7244-4:1999, the glass transition temperature (Tg) of a cured product obtained by curing a photosensitive resin composition at 230°C for 2 hours is measured by dynamic viscoelasticity measurement (DMA). ＤＭＡ The glass transition temperature (Tg) of the cured product obtained by curing a photosensitive resin composition at 230°C for 2 hours is determined by thermomechanical analysis (TMA) in accordance with JIS K 7197:2012. ＴＭＡ Let's assume that Tg ＤＭＡ -Tg ＴＭＡ The temperature is preferably 25°C to 100°C, more preferably 30°C to 90°C, and even more preferably 35°C to 80°C. In this embodiment, Tg ＤＭＡ -Tg ＴＭＡ The magnitude of the value is considered to be an indicator of the magnitude of the glass transition temperatures of polyimide (A1) and polyimide (A2) relative to the glass transition temperature of the cured polyfunctional (meth)acrylate (C). ＤＭＡ -Tg ＴＭＡ By keeping the above range, the balance between the tensile elongation and elastic modulus after curing of the photosensitive resin composition can be improved, making it possible to manufacture semiconductor devices with good connection reliability.

[0134] In accordance with JIS K 7197:2012, the mean linear thermal expansion coefficient (CTE) of a cured product obtained by curing a photosensitive resin composition at 230°C for 2 hours, measured by thermomechanical analysis (TMA), is preferably 20 ppm / °C to 60 ppm / °C, more preferably 25 ppm / °C to 58 ppm / °C, and even more preferably 30 ppm / °C to 55 ppm / °C. Having the mean linear thermal expansion coefficient (CTE) within this range suppresses warping of the semiconductor device, enabling the manufacture of a semiconductor device with good connection reliability.

[0135] The elongation at break of the cured product obtained by curing the photosensitive resin composition obtained by the following method at 230°C for 2 hours is preferably more than 23% and 80% or less, more preferably 24% to 70%, even more preferably 25% to 60%, and even more preferably 26% to 55%. Having the elongation at break at 23°C within this range suppresses the occurrence of cracks during the manufacturing of semiconductor devices, enabling the production of semiconductor devices with good connection reliability.

[0136] (Method) A test specimen (50 mm × 7 mm × 10 μm thick) is cut from the cured material. In accordance with JIS K 7197:2012, the elongation at break from the initial position of the test specimen to the point of fracture is measured using a thermomechanical analyzer under air atmosphere, tensile mode, chuck distance of 20 mm, tensile speed of 5 mm / min, and 23°C. The average value obtained from measurements of 10 test specimens is taken as the elongation at break.

[0137] The Δt obtained by the following method is preferably greater than -2.0 μm and less than or equal to 0 μm, more preferably between -1.5 μm and -0.1 μm, and even more preferably between -1.2 μm and -0.2 μm. Having Δt within this range makes it possible to manufacture semiconductor devices with minimal film thickness changes due to chemical treatment.

[0138] (Method) The photosensitive resin composition was spin-coated onto an 8-inch silicon wafer, and then heated at 110°C for 3 minutes to dry the photosensitive resin composition. The spin-coating was performed so that the film thickness after drying was 10 μm. Then, a high-pressure mercury lamp was used to heat the wafer at 600 mJ / cm². ２The specimen is exposed to light and cured by heating at 230°C for 2 hours under a nitrogen atmosphere. A test specimen (20 mm × 20 mm × 10 μm thick) with a silicon wafer is cut out using a dicing saw. The test specimen is immersed in dimethyl sulfoxide containing 2.38 mass% tetramethylammonium hydroxide (TMAH) at 50°C for 20 minutes. Then, it is washed with isopropanol, dried with an air blower, and heated on a hot plate at 170°C for 5 minutes to obtain a test specimen with a silicon wafer after the chemical resistance test. The film thickness t of the test specimen after the chemical resistance test is measured using an optical interferometry film thickness analyzer, and the difference in film thickness Δt before and after the chemical resistance test is calculated based on the following formula: Δt [μm] = t [μm] - 10 μm

[0139] (Method for preparing the photosensitive resin composition) The photosensitive resin composition of this embodiment can be prepared, for example, by synthesizing polyimide (A1) and polyimide (A2) separately, and then mixing the above-mentioned components in a solvent.

[0140] (Varnish) The varnish of this embodiment comprises the photosensitive resin composition of this embodiment and a solvent.

[0141] The total solid content (non-volatile components) in the varnish of this embodiment may be 10% by mass or more and 50% by mass or less.

[0142] In accordance with JIS K 7117-2:1999, the viscosity of the varnish measured using a cone rotor with a radius of 14 mm and an angle of 3° at 25°C and a rotation speed of 20 rpm may be between 100 mPa·s and 3,000 mPa·s, between 750 mPa·s and 2,500 mPa·s, or between 1,000 mPa·s and 2,000 mPa·s.

[0143] (Uses of the photosensitive resin composition) The photosensitive resin composition of this embodiment is preferably used in semiconductor devices. The photosensitive resin composition of this embodiment is preferably used to form a resin film for semiconductor devices, and more preferably to form a permanent film. The permanent film is used as a protective film, interlayer film, dam material, etc., for semiconductor devices.

[0144] (Cured product) The cured product of this embodiment is a cured product of the photosensitive resin composition of this embodiment. The cured product of this embodiment can be obtained, for example, by applying the photosensitive resin composition of this embodiment to a substrate, pre-baking to dry and form a resin film, then exposing and developing the resin film to a desired shape, and finally post-baking to cure it. Pre-baking may be, for example, a heat treatment at 90°C to 130°C for 30 seconds to 1 hour. Post-baking may be, for example, a heat treatment at 150°C to 250°C for 30 minutes to 10 hours.

[0145] (Semiconductor device) The semiconductor device of this embodiment includes the cured product of this embodiment. More specifically, the semiconductor device of this embodiment may include an interlayer insulating film, a resin film containing the cured product of this embodiment on the interlayer insulating film, and rewiring embedded in the resin film.

[0146] Figure 1 is a schematic cross-sectional view illustrating an example of the structure of a semiconductor device according to this embodiment. As shown in Figure 1, the semiconductor device 100 of this embodiment comprises a semiconductor substrate on which semiconductor elements such as transistors are provided, and a multilayer wiring layer (not shown) provided on the semiconductor substrate. The uppermost layer of the multilayer wiring layer is provided with an interlayer insulating film 30 and an uppermost wiring 34 provided on the interlayer insulating film 30. A passivation film 32 is provided on the interlayer insulating film 30 and the uppermost wiring 34. An opening is provided in a part of the passivation film 32 to expose the uppermost wiring 34. A rewiring layer 40 is provided on the passivation film 32. The rewiring layer 40 includes an insulating layer 42 provided on the passivation film 32, rewiring 46 provided on the insulating layer 42, and an insulating layer 44 provided on the insulating layer 42 and the rewiring 46. An opening is formed in the insulating layer 42 that connects to the uppermost wiring 34. The rewiring 46 is formed on the insulating layer 42 and within openings provided in the insulating layer 42, and is connected to the uppermost wiring 34. The insulating layer 44 is provided with openings for connection to the rewiring 46. Within the openings provided in the insulating layer 44, for example, bumps 52 are formed via a UBM (Under Bump Metallurgy) layer 50. The semiconductor device 100 is connected to a wiring board or the like via, for example, the bumps 52.

[0147] In the semiconductor device 100, at least one selected from the group consisting of a passivation film 32, an insulating layer 42, and an insulating layer 44 may be a resin film containing the cured product of this embodiment. The resin film may be a permanent film.

[0148] The semiconductor device 100 may be a semiconductor chip. In this case, for example, a semiconductor package can be obtained by mounting the semiconductor device 100 on a wiring board via bumps 52.

[0149] Although embodiments of the present invention have been described above, these are merely examples, and various other configurations can be adopted. Furthermore, the present invention is not limited to the embodiments described above, and modifications, improvements, etc., within the scope that can achieve the objectives of the present invention are included in the present invention.

[0150] The present invention will be described in detail below with reference to examples. However, the present invention is not limited in any way to the descriptions in these examples.

[0151] (1) Raw materials for polyimide (A1) and polyimide (A2) The raw materials used in the synthesis of polyimide (A1) and polyimide (A2) are shown below.

[0152] (Diamine) MBAA: 5,5'-methylenebis(2-aminobenzoic acid), represented by the following formula.

[0153] DABA: 3,5-diaminobenzoic acid, represented by the following formula.

[0154] MED-J: 4,4-diamino-3,3-diethyl-5,5-dimethyldiphenylmethane, represented by the following formula.

[0155] ATEPM: 4,4'-diamino-3,3',5,5'-tetraethyldiphenylmethane, represented by the following formula.

[0156] APB: 1,3-bis(3-aminophenoxy)benzene, represented by the following formula.

[0157] TSN: 3,7-diamino-2,8-dimethyldibenzothiophenesulfone, represented by the following formula.

[0158] OTBAF: 9,9-bis(4-amino-3-methylphenyl)fluorene, represented by the following formula.

[0159] BAPP: 2,2-bis[4-(4-aminophenoxy)phenyl]propane, represented by the following formula.

[0160] BAF: 9,9-bis(4-aminophenyl)fluorene, represented by the following formula.

[0161] (Acid dianhydride) ODPA: 4,4'-oxydiphthalic acid anhydride, represented by the following formula.

[0162] TMPBP-TME: Represented by the following formula, 2,2',3,3',5,5'-hexamethyl[1,1'-biphenyl]-4,4'-diyl=bis(1,3-dioxo-1,3-dihydro-2-benzofuran-5-carboxylate) (manufactured by Honshu Chemical Industry Co., Ltd.)

[0163] BTDA: 3,3',4,4'-benzophenonetetracarboxylic dianhydride, represented by the following formula.

[0164] BPADA: 4,4'-(4,4'-isopropylidenediphenoxy)diphthalic anhydride, represented by the following formula.

[0165] (2) Synthesis of Polyimide (A1) (Synthesis of Polyimide 1) In a 2 L glass separable flask equipped with a stirrer and stirring blades, 5.726 g (0.020 mol) of MBAA and 50.837 g (0.180 mol) of MED-J as diamines, 62.664 g (0.202 mol) of ODPA as an acidic dianhydride, and 400 g of N-methyl-2-pyrrolidone as a solvent were added and stirred to dissolve the diamines and acidic dianhydrides in the solvent. Next, the mixture was stirred under a nitrogen stream at room temperature for 12 hours to carry out a polymerization reaction and synthesize polyamic acid. Next, 16 g of pyridine was added to the solution, and then 82 g of acetic anhydride was added dropwise. The mixture was stirred for 24 hours while maintaining the liquid temperature at 20 to 100°C to carry out an imidation reaction and obtain a polyimide solution. The obtained polyimide solution was added to 1000 g of methanol in a 5 L container to precipitate polyimide resin. The solid polyimide resin was filtered off using a suction filtration device and washed with 1000 g of methanol. Polyimide 1 was obtained by drying in a vacuum dryer at 100°C for 24 hours and then at 200°C for 3 hours.

[0166] (Synthesis of Polyimides 2-5) Polyimides 2-5 were synthesized in the same manner as Polyimide 1, except that the composition of the diamine raw materials was changed.

[0167] Table 1 shows the starting material composition of diamines used in the synthesis of polyimides 1 to 5 (units are molar ratios).

[0168]

[0169] (3) Synthesis of Polyimide (A2) For each example and comparative example, polyimide (A2) was synthesized using the diamine and acidic dianhydride raw material compositions shown in Table 2. In Table 2, the units are molar ratios. Diamine: 9.0 g, acidic dianhydride: 11.0 g, and solvent (3-methyl-2-oxazolidone: 91.1 g, and cyclopentyl methyl ether: 5.5 g) were placed in a flask equipped with a Dean-Stark apparatus. The mixture was then stirred at room temperature for 10 minutes under a nitrogen atmosphere, and then heated using an oil bath and reacted at 150°C for 1 hour. 2,6-lutidine: 3.3 g was added as a dehydration catalyst, and the reaction was further carried out at 190°C for 4 hours. After the reaction solution was cooled to room temperature, it was diluted with tetrahydrofuran, and isopropanol was added dropwise to precipitate a solid. The obtained solid was filtered, washed, and vacuum dried at 60°C to obtain polyimide (A2).

[0170]

[0171] (4) Preparation of Photosensitive Resin Composition Each raw material was mixed in a solvent to prepare a photosensitive resin composition. The types and amounts of raw materials other than polyimide (A1) and polyimide (A2), as well as the types and amounts of solvents, are shown below. The amounts of polyimide (A1), polyimide (A2), polyfunctional (meth)acrylate (C), and epoxy compound (D) are shown in Table 3. The amounts of each raw material and solvent are relative to 100 parts by mass of the total of polyimide (A1) and polyimide (A2).

[0172] (Polymerization initiator (B)) b1: 10 parts by mass of 1-[4-(phenylthio)phenyl]octane-1,2-dione=2-(O-benzoyloxime), represented by the following formula ("Irgacure OXE01" manufactured by BASF Japan).

[0173] b2: Dicumyl peroxide represented by the following formula (Parcadox BC-FF, manufactured by Kayaku Nurion Co., Ltd.), 10 parts by mass

[0174] (Polyfunctional (meth)acrylate (C)) c1: Dipentaerythritol polyacrylate represented by the following formula (A-DPH, manufactured by Shin-Nakamura Chemical Industry Co., Ltd.)

[0175] c2: A polyfunctional acrylate compound represented by the following formula (manufactured by Osaka Organic Chemical Industry Co., Ltd., Viscoat #802)

[0176] c3: Tris(2-acryloyloxyethyl) isocyanurate (A-9300NT, manufactured by Shin-Nakamura Chemical Industry Co., Ltd.) c4: Triethylene glycol dimethacrylate (3G, manufactured by Shin-Nakamura Chemical Industry Co., Ltd.)

[0177] (Epoxy compound (D)) d1: 4-hydroxybutyl acrylate glycidyl ether represented by the following formula (Shinryo Co., Ltd. "4HBAGE")

[0178] d2: A trifunctional epoxy compound represented by the following formula (Printec Co., Ltd., VG3101L)

[0179] (Silane coupling agent (E)) e1: 2 parts by mass of 3-trimethoxysilylpropyl succinic anhydride (Shin-Etsu Chemical Co., Ltd. "X-12-967C"), represented by the following formula.

[0180] e2: 2 parts by mass of 3-methacryloyloxypropyltrimethoxysilane (KBM-503, manufactured by Shin-Etsu Chemical Co., Ltd.), represented by the following formula.

[0181] (Other raw materials) Adhesion aid: 5-aminotetrazol monohydrate (manufactured by Masuda Chemical Industries, Ltd.), 2 parts by mass Curing catalyst: Tetraphenylphosphonium 4,4'-sulfonyl diphenolate (manufactured by Sumitomo Bakelite Co., Ltd.), represented by the following formula, 10 parts by mass

[0182] Antioxidant: Tris(4-tert-butyl-3-hydroxy-2,6-dimethylbenzyl)isocyanuric acid (KEMINOX179, manufactured by Chemipro Chemical Co., Ltd.), 2 parts by mass, represented by the following formula.

[0183] Surfactant: Polyether-modified siloxane (BYK-349, manufactured by BYK Corporation), 0.1 parts by mass; Solvent: γ-butyrolactone (manufactured by Sanwa Oil & Chemical Industry Co., Ltd.), 600 parts by mass

[0184] (5) Evaluation of the photosensitive resin composition (Preparation of cured product) The photosensitive resin composition was spin-coated onto an 8-inch silicon wafer, and then heated at 110°C for 3 minutes to dry the photosensitive resin composition (pre-bake). The spin-coating was performed so that the film thickness after drying was 10 μm. Then, a high-pressure mercury lamp was used to heat the wafer at 600 mJ / cm². ２ The silicon wafer was exposed to light and then heated at 230°C for 2 hours under a nitrogen atmosphere to cure it (post-bake). The silicon wafer was cut to a width of 7 mm using a dicing saw. The cut silicon wafer was immersed in a 2 mass% hydrofluoric acid aqueous solution and the cured material was peeled off the silicon wafer. The peeled cured material was dried at 80°C for 90 minutes to obtain a cured product.

[0185] (Dynamic Viscoelasticity Measurement) A test specimen (30 mm × 7 mm × 10 μm thick) was cut from the obtained cured material. In accordance with JIS K 7244-4:1999, dynamic viscoelasticity measurement (DMA) was performed using a dynamic viscoelasticity measuring device (TA Instruments "Q800") under the conditions of air atmosphere, frequency 1 Hz, tensile mode, heating rate 5 °C / min, chuck distance 20 mm, and 23 °C, and the storage modulus at 23 °C was measured. Furthermore, dynamic viscoelasticity measurement (DMA) was performed under the conditions of heating from 23 °C to 400 °C. In the obtained temperature-loss tangent (tanδ) graph, the temperature at which the loss tangent (tanδ) is maximum was defined as the glass transition temperature (Tg). ＤＭＡ )

[0186] (Thermomechanical Analysis) A test specimen (20 mm × 4 mm × 10 μm thick) was cut from the obtained hardened material. Thermomechanical analysis (TMA) was performed in accordance with JIS K 7197:2012 using a thermomechanical analyzer (Hitachi High-Tech Corporation "TMA-7100C") under nitrogen atmosphere, tensile mode, heating rate of 10°C / min, chuck distance of 10 mm, and heating from 23°C to 400°C. The glass transition temperature (Tg) was determined from the obtained temperature-displacement graph. ＴＭＡ), and the average coefficient of linear thermal expansion (CTE) in the range of 50°C to 100°C were determined.

[0187] (Measurement of Elongation at Break) A test specimen (50 mm × 7 mm × 10 μm thick) was cut from the hardened material. In accordance with JIS K 7197:2012, the elongation at break from the initial position to the breaking point of the test specimen was measured using a thermomechanical analyzer (A&D Corporation "STB-1225S") under the conditions of air atmosphere, tensile mode, chuck distance of 20 mm, tensile speed of 5 mm / min, and 23°C. The average value obtained from measurements of 10 test specimens was taken as the elongation at break.

[0188] (Chemical Resistance Test) The photosensitive resin composition was spin-coated onto an 8-inch silicon wafer, and then heated at 110°C for 3 minutes to dry the photosensitive resin composition (pre-bake). The spin-coating was performed so that the film thickness after drying was 10 μm. Then, a high-pressure mercury lamp was used to test at 600 mJ / cm². ２ The specimens were exposed to light and then heated at 230°C for 2 hours under a nitrogen atmosphere to cure them (post-bake). A test specimen with a silicon wafer (20 mm × 20 mm × 10 μm thick) was cut out using a dicing saw. The test specimen was immersed in dimethyl sulfoxide containing 2.38 mass% tetramethylammonium hydroxide (TMAH) at 50°C for 20 minutes. Next, it was washed with isopropanol, dried with an air blower, and then heated on a hot plate at 170°C for 5 minutes to obtain a silicon wafer-attached test specimen after the chemical resistance test. The film thickness t of the test specimen after the chemical resistance test was measured using an optical interferometry film thickness analyzer (VM-1020, manufactured by SCREEN Semiconductor Solutions Inc.), and the difference in film thickness Δt before and after the chemical resistance test was calculated based on the following formula: Δt [μm] = t [μm] - 10 μm

[0189] Furthermore, the photosensitive resin composition of Example 10 was subjected to a chemical resistance test at 23°C. The photosensitive resin composition was spin-coated onto an 8-inch silicon wafer, and then heated at 110°C for 3 minutes to dry the photosensitive resin composition (pre-bake). Subsequently, a high-pressure mercury lamp was used to apply a chemical resistance of 600 mJ / cm². ２The specimen was exposed to light and then heated at 230°C for 2 hours under a nitrogen atmosphere to cure it (post-bake). A test specimen (20 mm long x 20 mm wide) with a silicon wafer attached was cut out using a dicing saw. The film thickness of the test specimen before the chemical resistance test was measured to be 10.15 μm using an optical interferometry film thickness analyzer (VM-1020, manufactured by SCREEN Semiconductor Solutions). Next, the test specimen was immersed in dimethyl sulfoxide containing 2.38% by mass of tetramethylammonium hydroxide (TMAH) at 23°C for 10 minutes. Then, it was washed with isopropanol, dried with an air blower, and heated on a hot plate at 170°C for 5 minutes to obtain a test specimen with a silicon wafer attached after the chemical resistance test. The film thickness of the test specimen after the chemical resistance test, measured using an optical interferometry film thickness analyzer (VM-1020, manufactured by SCREEN Semiconductor Solutions Inc.), was 10.11 μm, confirming that the difference in film thickness before and after the chemical resistance test at 23°C was small.

[0190] Table 3 shows the evaluation results for each example and comparative example.

[0191]

[0192] This application claims priority based on Japanese Patent Application No. 2025-049667, filed on 25 March 2025, and incorporates all of its disclosures herein.

[0193] 30 Interlayer insulating film 32 Passivation film 34 Top layer wiring 40 Redistribution layer 42 Insulating layer 44 Insulating layer 46 Redistribution 50 UBM layer 52 Bump 100 Semiconductor equipment

Claims

1. A photosensitive resin composition comprising: a polyimide (A1) having a carboxyl group in its constituent units; a polyimide (A2) different from the polyimide (A1); and a polymerization initiator (B).

2. The photosensitive resin composition according to claim 1, wherein the polyimide (A1) comprises a constituent unit represented by the following general formula (1). (In general formula (1), X represents a constituent unit (X) which is a divalent organic group, and Y represents a constituent unit (Y) which is a tetravalent organic group, and the constituent unit (X) includes a constituent unit (X-1) which has a carboxyl group.) 3. The photosensitive resin composition according to claim 2, wherein the constituent unit (X-1) includes a constituent unit represented by the following general formula (x1). (In general formula (x1), Z １ (where * represents a single bond, oxygen atom, or divalent organic group, and * represents a bond.) 4. The photosensitive resin composition according to claim 2 or 3, wherein the constituent unit (X-1) includes a constituent unit represented by the following general formula (x2). (In the general formula (x²), * represents a bond.) 5. The photosensitive resin composition according to claim 2 or 3, wherein the constituent unit (X-1) comprises a constituent unit derived from at least one diamine selected from the group consisting of 5,5'-methylenebis(2-aminobenzoic acid), 1,2-bis(4-amino-2-carboxyphenoxy)benzene, 1,3-bis(4-amino-2-carboxyphenoxy)benzene, 4,4'-diaminobiphenyl-2,2'-dicarboxylic acid, 5-amino-2-(4-aminophenoxy)benzoic acid, 3,5-diaminobenzoic acid, 3,5-diamino-4-methoxybenzoic acid, 3,5-bis(4-aminophenoxy)benzoic acid, N-bis(4-aminophenyl)-4-carboxyaniline, and 4,4'-diamino-N-(4-carboxyphenyl)benzanilide.

6. The photosensitive resin composition according to claim 2 or 3, wherein the constituent unit (X) further comprises a constituent unit represented by the following general formula (x3). (In general formula (x3), Z ２ R represents an alkylene group. １ Each of these independently represents an alkyl group having 1 to 4 carbon atoms, and * represents a bond.

7. The photosensitive resin composition according to claim 2 or 3, wherein the constituent unit (Y) includes a constituent unit represented by the following formula (y11). (In equation (y11), * represents a coupling.) 8. The photosensitive resin composition according to any one of claims 1 to 3, wherein the polyimide (A2) comprises a constituent unit represented by the following general formula (2), and the constituent unit (X') in the general formula (2) comprises at least one selected from the group consisting of a constituent unit represented by the following general formula (x5), a constituent unit represented by the following general formula (x6), and a constituent unit represented by the following general formula (x7). (In general formula (2), X' represents a divalent organic group (X'), and Y' represents a tetravalent organic group (Y').) (In general formula (x5), R ２ Each of the above independently represents an alkyl group having 1 to 4 carbon atoms, a and b independently represent integers from 0 to 3, and * represents a bond. (In general formula (x6), R ３ Each of the following independently represents an alkyl group having 1 to 4 carbon atoms, c and d independently represent integers from 0 to 4, and * represents a bond. (In general formula (x7), R ４ Each of the following independently represents an alkyl group having 1 to 4 carbon atoms, e and f independently represent integers from 0 to 4, and * represents a bond.

9. The photosensitive resin composition according to any one of claims 1 to 3, wherein the polyimide (A2) comprises a constituent unit represented by the following general formula (2), and the constituent unit (Y') in the general formula (2) comprises a constituent unit represented by the following general formula (y2). (In general formula (2), X' represents a divalent organic group (X'), and Y' represents a tetravalent organic group (Y').) (In general formula (y2), R ５ Each of these independently represents an alkyl group having 1 to 4 carbon atoms, Z ３ (where represents a single bond or a divalent organic group, g and h each independently represent an integer from 0 to 4, and * represents a bond.) 10. The photosensitive resin composition according to any one of claims 1 to 3, wherein the polyimide (A2) does not have a carboxyl group in its constituent units.

11. The photosensitive resin composition according to any one of claims 1 to 3, wherein when the total amount of the polyimide (A1) and the polyimide (A2) is 100 parts by mass, the content of the polyimide (A1) is 10 parts by mass or more and 90 parts by mass or less.

12. A photosensitive resin composition according to any one of claims 1 to 3, further comprising a polyfunctional (meth)acrylate (C).

13. The photosensitive resin composition according to claim 12, wherein the polyfunctional (meth)acrylate (C) comprises a trifunctional or more (meth)acrylate.

14. The photosensitive resin composition according to any one of claims 1 to 3, further comprising epoxy compound (D).

15. The photosensitive resin composition according to any one of claims 1 to 3, further comprising a silane coupling agent (E).

16. The photosensitive resin composition according to claim 15, wherein the silane coupling agent (E) comprises (meth)acrylsilane.

17. The photosensitive resin composition according to any one of claims 1 to 3, wherein the storage modulus at 23°C of the cured product obtained by curing the photosensitive resin composition at 230°C for 2 hours, as measured by dynamic viscoelasticity measurement (DMA) in accordance with JIS K 7244-4:1999, is 3.3 GPa or more.

18. The glass transition temperature (Tg ＤＭＡ ) of a cured product obtained by curing said photosensitive resin composition at 230°C for 2 hours, measured by dynamic viscoelasticity measurement (DMA) in accordance with JIS K 7244-4:1999, is higher than 319°C. The photosensitive resin composition according to any one of claims 1 to 3.

19. The glass transition temperature (Tg) of the cured product obtained by curing the photosensitive resin composition at 230°C for 2 hours, as measured by thermomechanical analysis (TMA) in accordance with JIS K 7197:2012. ＴＭＡ A photosensitive resin composition according to any one of claims 1 to 3, wherein the temperature is greater than 255°C.

20. The glass transition temperature (Tg) of the cured product obtained by curing the photosensitive resin composition at 230°C for 2 hours is measured by dynamic viscoelasticity measurement (DMA) in accordance with JIS K 7244-4:1999. ＤＭＡ The glass transition temperature (Tg) of the cured product obtained by curing the photosensitive resin composition at 230°C for 2 hours is determined by thermomechanical analysis (TMA) in accordance with JIS K 7197:2012. ＴＭＡ In that case, Tg ＤＭＡ -Tg ＴＭＡ A photosensitive resin composition according to any one of claims 1 to 3, wherein the temperature is 25°C or higher.

21. The photosensitive resin composition according to any one of claims 1 to 3, wherein the mean coefficient of linear expansion (CTE) in the range of 50°C to 100°C of the cured product obtained by curing the photosensitive resin composition at 230°C for 2 hours, as measured by thermomechanical analysis (TMA) in accordance with JIS K 7197:2012, is 60 ppm / °C or less.

22. A photosensitive resin composition according to any one of claims 1 to 3, wherein the photosensitive resin composition obtained by curing the photosensitive resin composition at 230°C for 2 hours by the following method has a fracture elongation of more than 23% at 23°C. (Method) A test piece (50 mm × 7 mm × 10 μm thick) is cut from the cured product. In accordance with JIS K 7197:2012, the fracture elongation from the initial position of the test piece to the breaking point is measured using a thermomechanical analyzer under the conditions of air atmosphere, tensile mode, chuck distance of 20 mm, tensile speed of 5 mm / min, and 23°C. The average value obtained from measurements of 10 test pieces is taken as the fracture elongation.

23. The photosensitive resin composition according to any one of claims 1 to 3, wherein the Δt obtained by the following method is greater than -2.0 μm. (Method) The photosensitive resin composition is spin-coated onto an 8-inch silicon wafer, and then heated at 110°C for 3 minutes to dry the photosensitive resin composition. The spin-coating is performed so that the film thickness after drying is 10 μm. Next, using a high-pressure mercury lamp, 600 mJ / cm² was measured. ２ The material is exposed to light and then heated at 230°C for 2 hours under a nitrogen atmosphere to cure it. Using a dicing saw, cut out a test piece (20 mm x 20 mm x 10 μm thick) with a silicon wafer attached. The test specimen is immersed in dimethyl sulfoxide containing 2.38% by mass of tetramethylammonium hydroxide (TMAH) at 50°C for 20 minutes. Then, it is washed with isopropanol, dried with an air blower, and heated on a hot plate at 170°C for 5 minutes to obtain the test specimen with a silicon wafer after the chemical resistance test. The film thickness t of the test specimen after the chemical resistance test is measured using an optical interferometry film thickness analyzer, and the difference in film thickness Δt before and after the chemical resistance test is calculated based on the following formula: Δt [μm] = t [μm] - 10 μm 24. A photosensitive resin composition according to any one of claims 1 to 3, used in semiconductor devices.

25. A varnish comprising the photosensitive resin composition according to any one of claims 1 to 3, and a solvent.

26. A cured product of the photosensitive resin composition according to any one of claims 1 to 3.

27. A semiconductor device comprising the cured product described in claim 26.

28. The semiconductor device according to claim 27, comprising: an interlayer insulating film; a resin film containing the cured product on the interlayer insulating film; and rewiring embedded in the resin film.

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