Display element and display device

Abstract

The purpose of the invention is to reduce charge leakage between pixels. A display element according to the present invention comprises multiple pixels that are arranged on a substrate and each emit light of a different wavelength. Each among the multiple pixels includes: a light-emitting element comprising a first electrode, an organic layer, and a second electrode; a reflective layer that is arranged between the substrate and the light-emitting element so as to reflect light from the light-emitting element; a light-transmitting layer that is arranged between the reflective layer and the organic layer so as to adjust the optical path length; and a projection that is arranged on the light-transmitting layer and has a shape extending in a planar direction of the substrate. The multiple pixels respectively comprise light-transmitting layers having different thicknesses.

Description

Display elements and display devices

[0001] This disclosure relates to display elements and display devices.

[0002] In recent years, organic EL displays have been applied not only to direct-view displays such as monitors, but also to ultra-small displays (microdisplays) that require pixel pitches of a few microns. For example, organic EL displays are being applied to electronic viewfinders (EVFs) and head-mounted displays, where high-brightness and high-resolution panels are required.

[0003] Conventional direct-view organic EL displays with RGB color separation structures created by a mask deposition process are unable to accommodate such fine pixel pitches. This is due to the low accuracy of mask alignment. Therefore, a White-type EL display has been proposed that produces white by stacking RGB three-color light-emitting layers across all pixels (see, for example, Patent Document 1).

[0004] Japanese Patent Publication No. 2013-258022

[0005] However, in the conventional technology described above, the organic EL film is arranged in common between pixels, which presents a problem in that the charge injected from the lower electrode tends to leak laterally.

[0006] Therefore, this disclosure proposes a display element that reduces charge leakage between pixels and a display device that uses said display element.

[0007] The display element of the present disclosure comprises a plurality of pixels arranged on a substrate, each emitting light of a different wavelength, each of the plurality of pixels having a light-emitting element comprising a first electrode, an organic layer and a second electrode, a reflective layer disposed between the substrate and the light-emitting element to reflect light from the light-emitting element, a light-transmitting layer disposed between the reflective layer and the organic layer to adjust the optical path length, and a protruding portion disposed on the light-transmitting layer having a shape that extends in the plane direction of the substrate, and each of the plurality of pixels comprises a light-transmitting layer of a different thickness.

[0008] This is a schematic diagram showing an example of the overall configuration of a display device according to the embodiment of this disclosure. This is a schematic circuit diagram for explaining the wiring relationship in the sub-pixel of the mth row and nth column. This is a diagram showing an example of the configuration of a pixel according to the first embodiment of this disclosure. This is a diagram showing an example of the configuration of a pixel according to the first embodiment of this disclosure. This is a diagram showing an example of the configuration of a pixel according to the first embodiment of this disclosure. This is a diagram showing an effect of the first embodiment of this disclosure. This is a diagram showing an effect of the first embodiment of this disclosure. This is a diagram showing another example of the configuration of a pixel according to the first embodiment of this disclosure. This is a diagram showing an effect of the first embodiment of this disclosure. This is a diagram showing an example of a method for manufacturing a display element according to second embodiment of this disclosure. This figure shows an example of the configuration of a protruding portion according to the second embodiment of the present disclosure. This figure shows an example of the configuration of a protruding portion according to the second embodiment of the present disclosure. This figure shows an example of the configuration of a protruding portion according to the second embodiment of the present disclosure. This figure shows an example of the configuration of an optical adjustment layer according to the second embodiment of the present disclosure. This figure shows an example of the configuration of an optical adjustment layer according to the second embodiment of the present disclosure. This figure shows an example of the configuration of an optical adjustment layer according to the second embodiment of the present disclosure. This figure shows an example of the configuration of a pixel according to the second embodiment of the present disclosure. This figure shows another example of the configuration of a pixel according to the second embodiment of the present disclosure. This figure shows another example of the configuration of a pixel according to the second embodiment of the present disclosure. This figure shows another example of the configuration of a pixel according to the second embodiment of the present disclosure. This figure shows another example of the configuration of a pixel according to the second embodiment of the present disclosure. This figure shows another example of the configuration of a pixel according to the second embodiment of the present disclosure. This figure shows another example of the configuration of a pixel according to the second embodiment of the present disclosure.This figure shows another example of the pixel configuration according to the second embodiment of this disclosure. This figure shows another example of the pixel configuration according to the second embodiment of this disclosure. This figure shows another example of the pixel configuration according to the second embodiment of this disclosure. This figure shows another example of the pixel configuration according to the second embodiment of this disclosure. This figure shows another example of the pixel configuration according to the second embodiment of this disclosure. This figure shows another example of the pixel configuration according to the second embodiment of this disclosure. This figure shows another example of the pixel configuration according to the second embodiment of this disclosure. This figure shows an example of the pixel configuration according to the third embodiment of this disclosure. This figure shows an example of the manufacturing method of a display element optical adjustment layer configuration according to the fourth embodiment of this disclosure. This figure shows an example of the protrusion configuration according to the fourth embodiment of this disclosure. This figure shows an example of the protrusion configuration according to the fourth embodiment of this disclosure. This is a diagram showing an example of the configuration of a protruding part according to the fourth embodiment of this disclosure. This is a diagram showing an example of the configuration of a protruding part according to the fourth embodiment of this disclosure. This is a diagram showing an example of the configuration of a pixel fifth embodiment of this disclosure. This is a diagram showing an example of the configuration of a pixel according to the fifth embodiment of this disclosure. This is a diagram showing another example of the configuration of a pixel according to the fifth embodiment of this disclosure. This is a diagram showing an example of the configuration of an on-chip lens according to the sixth embodiment of this disclosure. This is a diagram showing an example of the configuration of an on-chip lens according to the sixth embodiment of this disclosure. This is a diagram showing another example of the configuration of an on-chip lens according to the sixth embodiment of this disclosure.This figure shows another example configuration of the on-chip lens according to the sixth embodiment of this disclosure. This figure shows an example of the connection of the first electrode and reflector according to the sixth embodiment of this disclosure. This figure shows an example of the connection of the first electrode and reflector according to the sixth embodiment of this disclosure. This figure shows an example of the connection of the first electrode and reflector according to the sixth embodiment of this disclosure. This figure shows an example of the connection of the first electrode and reflector according to the sixth embodiment of this disclosure. This figure shows an example of the connection of the first electrode and reflector according to the sixth embodiment of this disclosure. This figure shows an example of the second electrode according to the sixth embodiment of this disclosure. This figure shows an example of the protective layer according to the sixth embodiment of this disclosure. This figure shows an example of the protective layer according to the sixth embodiment of this disclosure. This figure shows an example of the color filter according to the sixth embodiment of this disclosure. This figure shows an example of the color filter according to the sixth embodiment of this disclosure. This figure shows an example of the color filter according to the sixth embodiment of this disclosure. This figure shows an example of the organic layer according to the sixth embodiment of this disclosure. This figure shows an example of the organic layer according to the sixth embodiment of this disclosure. This figure shows a cross-sectional view of the first example of the leak suppression structure. This figure shows a cross-sectional view of the second example of the leak suppression structure. This figure shows a cross-sectional view of the third example of the leak suppression structure. This figure shows a cross-sectional view of the fourth example of the leak suppression structure. This figure shows a cross-sectional view of the fifth example of the leak suppression structure. This is a cross-sectional view of the sixth example of the leak suppression structure. This is a cross-sectional view of the seventh example of the leak suppression structure. This is a conceptual diagram (1) to explain the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN" passing through the center of the wavelength selection part. This is a conceptual diagram (2) to explain the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN" passing through the center of the wavelength selection part. This is a conceptual diagram (3) to explain the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN" passing through the center of the wavelength selection part. This is a conceptual diagram (4) to explain the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN" passing through the center of the wavelength selection part. This is a conceptual diagram (5) to explain the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN" passing through the center of the wavelength selection part.This is a conceptual diagram (6) illustrating the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN'' passing through the center of the wavelength-selecting part. This is a conceptual diagram (7) illustrating the relationship between the normal vector LN passing through the center of the light-emitting part, the normal vector LN' passing through the center of the lens member, and the normal vector LN'' passing through the center of the wavelength-selecting part. This is a schematic cross-sectional view illustrating the first example of a resonator structure. This is a schematic cross-sectional view illustrating the second example of a resonator structure. This is a schematic cross-sectional view illustrating the third example of a resonator structure. This is a schematic cross-sectional view illustrating the fourth example of a resonator structure. This is a schematic cross-sectional view illustrating the fifth example of a resonator structure. This is a schematic cross-sectional view illustrating the sixth example of a resonator structure. This is a schematic cross-sectional view illustrating the seventh example of a resonator structure. This is a front view showing an example of the appearance of a digital still camera. This is a rear view showing an example of the appearance of a digital still camera. This is an external view of a head-mounted display. This is an external view of a see-through head-mounted display. This is an external view of a television system. This is an external view of a smartphone. This is a diagram (1) showing the internal structure of a car. This is a diagram (2) showing the internal structure of a car.

[0009] The embodiments of this disclosure will be described in detail below with reference to the drawings. The description will be in the following order. In each of the following embodiments, the same parts will be denoted by the same reference numerals, and redundant descriptions will be omitted. 1. Overall configuration of the display device 2. First embodiment 3. Second embodiment 4. Third embodiment 5. Fourth embodiment 6. Fifth embodiment 7. Sixth embodiment 8. Example of inter-pixel structure for countermeasures against inter-pixel leakage 9. Modifications 10. Application examples

[0010] (1. Overall Configuration of the Display Device) Referring to Figure 1, an example of the overall configuration of an organic EL (Electro Luminescence) display device (display device) 10 (hereinafter simply referred to as "display device 10") according to the embodiment of this disclosure, which is used as a display device or lighting device, will be described. Figure 1 is a schematic diagram showing an example of the overall configuration of the display device 10 according to the embodiment of this disclosure.

[0011] The display device 10 is a device in which light-emitting elements such as OLEDs (Organic Light Emitting Diodes) or Micro-OLEDs are formed in an array. Such a display device 10 can be used as a display device for VR (Virtual Reality), MR (Mixed Reality), or AR (Augmented Reality), as well as an electronic viewfinder (EVF), or a small projector. The display device 10 can also be used as various lighting devices. In addition, the display device 10 may use light-emitting elements made of inorganic materials instead of organic materials such as OLEDs.

[0012] The display device 10 has a display area (pixel array area) and a peripheral area provided around the periphery of the display area. As shown in Figure 1, the pixel array area 20 of the display device 10 is configured such that, for example, a plurality of pixels 100R, 100G, and 100B are arranged in a matrix. For example, pixel 100R can emit red light (for example, light with a wavelength of 580 nm to 640 nm). Pixel 100G can emit green light (for example, light with a wavelength of 510 nm to 550 nm). Pixel 100B can emit blue light (for example, light with a wavelength of 450 nm to 480 nm). In the following description, unless otherwise distinguished, pixels 100R, 100G, and 100B will be referred to as pixel 100.

[0013] It should be noted that it can also be considered that three types of pixels 100R, 100G, and 100B that emit different light are combined to form one pixel. In this case, pixels 100R, 100G, and 100B are referred to as sub-pixels. In the present embodiment, the number and arrangement of each of the three types of sub-pixels (pixels 100R, 100G, and 100B) included in one pixel are not particularly limited. In addition, a pixel means the smallest unit (pixel) controlled during light emission control of the display device 10, and is constituted by a plurality of sub-pixels handled as one unit during control. That is, in the present embodiment, the display device 10 includes a plurality of pixels arranged in a matrix on a substrate (substrate 160 described later).

[0014] In addition, as shown in FIG. 1, a horizontal driving circuit 41 and a vertical driving circuit 42 are provided in a peripheral region of the display device 10.

[0015] When writing signals to each pixel 100, the horizontal drive circuit 41 scans the signals in row units (in FIG. 1, the direction extending along the X direction is referred to as the row direction), and can sequentially supply scanning signals to each scanning line SCL. The horizontal drive circuit 41 can be constituted by, for example, a shift register or the like that sequentially shifts (transfers) start pulses in synchronization with input clock pulses.

[0016] In addition, the vertical drive circuit 42 supplies a signal voltage of a signal corresponding to luminance information supplied from a signal supply source (not shown) to the selected pixel 100 in column units (in FIG. 1, the direction extending along the Y direction is referred to as the column direction) via the signal line DTL. The pixel array unit 20, the horizontal drive circuit 41, and the vertical drive circuit 42 constitute a display element 200.

[0017] It should be noted that in the embodiment of the present disclosure, the configuration of the display device 10 is not limited to the configuration shown in FIG. 1. That is, the configuration shown in FIG. 1 is merely an example, and the display device 10 according to the embodiment of the present disclosure can adopt various configurations. The pixel array unit 20 is an example of the "display element" in the present disclosure.

[0018] Next, the circuit configuration of the pixel 100 in the m-th row and the n-th column will be described with reference to FIG. 2. FIG. 2 is a schematic circuit diagram for explaining the connection relationship of the pixel 100 in the m-th row and the n-th column.

[0019] In the display device 10, as described above, the pixels 100 each including the light-emitting element ELP are arranged in a two-dimensional matrix while being connected to scanning lines SCL extending in the row direction (the X direction in FIG. 1) and signal lines DTL extending in the column direction (the Y direction in FIG. 1).

[0020] Further, as shown in FIG. 2, the display device 10 includes a power supply line PS1 that supplies a driving voltage to the pixels 100 ｍ and a common power supply line PS2 commonly connected to all the pixels 100. A predetermined driving voltage V ｍ or the like is supplied from a power supply unit (not shown) to the power supply line PS1 ＣＣ , and a common cathode voltage V Ｃａｔ (for example, ground potential) is supplied to the common power supply line PS2.

[0021] Here, it is assumed that the number of scanning lines SCL and the number of power supply lines PS1 are each M. The pixels 100 in the m-th row (where m = 1, 2, ..., P) are connected to the m-th scanning line SCL ｍ and the m-th power supply line PS1 ｍ , and constitute one display element row. In FIG. 2, only the scanning line SCL ｍ and the power supply line PS1 ｍ are shown. Further, it is assumed that the number of signal lines DTL is N. The pixels 100 in the n-th column (where n = 1, 2, ..., N) are connected to the n-th signal line DTL ｎ . In FIG. 2, only the signal line DTL ｎ is shown. Hereinafter, the pixel 100 located at the m-th row and the n-th column may be referred to as the (n, m)-th pixel 100.

[0022] As explained earlier, the display device 10 is scanned sequentially row by row by the scanning signal from the horizontal drive circuit 41. More specifically, in the display device 10, M pixels 100 arranged in the m-th row are driven simultaneously. In other words, for M pixels 100 arranged along the row direction, the timing of their illumination / de-illumination is controlled on a row-by-row basis. For example, if the display frame rate of the display device 10 is FR (frames / second), the scanning period per row (the so-called horizontal scanning period) when the display device 10 is scanned sequentially row by row will be less than (1 / FR) × (1 / P) seconds.

[0023] Furthermore, as shown in Figure 2, the pixel 100 is composed of a light-emitting element ELP and a drive circuit that drives it. The light-emitting element ELP consists of an organic electroluminescent light-emitting element or an inorganic electroluminescent light-emitting element. The drive circuit is a writing transistor TR Ｗ , and drive transistor TR Ｄ , and also, capacity section C １ It consists of the following: drive transistor TR Ｄ When current flows through the light-emitting element ELP, the ELP can emit light. Each transistor is composed of, for example, a p-channel field-effect transistor.

[0024] As shown in Figure 2, in pixel 100, the drive transistor TR Ｄ One of the source / drain regions is the capacitance section C １ One end and power supply line PS1 ｍ The two are electrically connected. The other source / drain region of the drive transistor TRD is electrically connected to one end of the light-emitting element ELP (specifically, the anode electrode). The gate electrode of the drive transistor TRD is connected to the other source / drain region of the write transistor TRW, and the capacitance C １ It is electrically connected to the other end.

[0025] Also, as shown in Figure 2, the writing transistor TR ｗ One of the source / drain regions is the signal line DTL ｎ It is electrically connected to the writing transistor TR ｗThe gate electrode is the scan line SCL ｍ It is electrically connected to it.

[0026] Furthermore, as shown in Figure 2, the other end of the light-emitting element ELP (specifically, the cathode electrode) is electrically connected to the common power supply line PS2. In addition, a predetermined cathode voltage V is supplied to the common power supply line PS2. Ｃａｔ This is supplied. Note that in Figure 2, the capacitance of the light-emitting element ELP is denoted by code C. ＥＬ It is represented as follows.

[0027] The overview of the driving of pixel 100 will be explained. In pixel 100, the signal line DTL is transmitted from the vertical drive circuit 42. ｎ When a voltage corresponding to the brightness of the image to be displayed is supplied, and the writing transistor TRw is made conductive by a scanning signal from the horizontal drive circuit 41, the capacitive section C １ A voltage corresponding to the brightness is written to it. (Writing transistor TR) ｗ After the capacitor is de-conducted, the capacitance part C １ The drive transistor TR operates according to the voltage held in Ｄ When an electric current flows through it, the light-emitting element ELP emits light.

[0028] In the embodiments of this disclosure, the configuration of the drive circuit that controls the light emission of the light-emitting element ELP is not limited to the configuration shown in Figure 2. Therefore, the configuration shown in Figure 2 is merely an example, and various configurations can be taken in the display device 10 according to the embodiments of this disclosure.

[0029] The display device 10 and pixels 100 have been described above using Figures 1 and 2. The pixel array 20 in the display device 10 shown in Figure 1, in which multiple pixels 100 are arranged, constitutes a display element.

[0030] (2. First Embodiment) <Pixel Configuration> Figure 3 is a diagram showing an example of the pixel configuration according to the first embodiment of the present disclosure. The figure is a schematic plan view showing an example of the configuration of pixels 100R, 100G, and 100B. The white rectangles in the figure represent the area of ​​pixel 100. The letters attached to these rectangles represent the type of pixel 100. "R" represents pixel 100R, "G" represents pixel 100G, and "B" represents pixel 100B. Pixels 100R, 100G, and 100B are arranged on the substrate 160.

[0031] Figure 4 is a diagram showing an example of the configuration of a pixel according to the first embodiment of this disclosure. The same figure is a schematic cross-sectional view showing an example of the configuration of pixels 100R, 100G, and 100B. The configuration of pixel 100 will be explained using pixel 100B as an example.

[0032] The pixel 100 comprises a substrate 160, a reflector 140, an optical adjustment layer 150, a light-emitting element ELP, a protective film 194, a color filter 195, a planarization film 196, an on-chip lens 197, an adhesive 198, and a counter substrate 199.

[0033] The substrate 160 supports the pixels 100. This substrate 160 can be made of a transparent material such as glass or a semiconductor. If the substrate 160 is made of a semiconductor, a drive circuit and the like can be arranged on it. In addition, an insulating layer 161 is placed on the surface of the substrate 160. This insulating layer 161 is made of, for example, silicon oxide (SiO ２ It can be composed of the following:

[0034] The reflector 140 is placed on the insulating layer 161 described above and reflects light from the organic layer of the light-emitting element ELP, which will be described later. The reflector 140 can be made of a metallic material such as silver (Ag), silver alloy, aluminum (Al), aluminum alloy, platinum (Pt), gold (Au), chromium (Cr), or tungsten (W). It is also desirable that the reflector 140 be made with a thickness of 50 to 200 nm. Below the reflector 140 in Figure 4, a base layer 141 is placed. This base layer 141 is made of titanium (Ti), titanium nitride (TiN), and titanium oxide (TiO ２) and laminates thereof can be constructed. Furthermore, it is desirable that the base layer 141 be constructed with a thickness of 5 to 100 nm. The reflector plate 140 is an example of the "reflective layer" of this disclosure.

[0035] The optical adjustment layer 150 is positioned between the reflector 140 and the light-emitting element ELP to adjust the optical path length. The optical adjustment layer 150 is configured with a thickness corresponding to the wavelength to be resonated, and has different thicknesses in pixels 100B, 100G, and 100R. It is desirable that the optical adjustment layer 150 be configured with a thickness of 5 to 100 nm. A protrusion 170 is positioned near the edge of the surface of the optical adjustment layer 150 that is close to the light-emitting element ELP. Details of the configuration of the protrusion 170 will be described later. The optical adjustment layer 150 is an example of the "light-transmitting layer" of this disclosure.

[0036] The optical adjustment layer 150 in Figure 4 comprises a plurality of dielectric layers. Specifically, the optical adjustment layer 150 comprises dielectric layers 151, 152, and 153 stacked in order. Dielectric layers 151 and 153 can be made of the same material. Also, dielectric layers 151 and 153 can be made to the same thickness in pixels 100B, 100G, and 100R. Dielectric layer 152 can be made of a material with a different dielectric constant than dielectric layers 151 and 153. Also, dielectric layer 152 can be made to a different thickness in pixels 100B, 100G, and 100R. By adjusting the thickness of this dielectric layer 152, the optical adjustment layer 150 for each pixel 100 can be made to a desired thickness. Dielectric layers 151 to 153 are, for example, silicon oxide (SiO ｘ ), silicon nitride (SiN ｘ ), silicon oxynitride (SiON) and aluminum oxide (AlO ｘ It can be constructed from inorganic insulators such as ).

[0037] The light-emitting element ELP comprises a first electrode 115, an organic layer 114, and a second electrode 113.

[0038] The first electrode 115 can be made of a transparent electrode such as ITO (Indium Tin Oxide). The first electrode 115 is preferably made to a thickness of 20 to 200 nm.

[0039] The organic layer 114 is a White-type organic EL film that emits white light, for example, by arranging RGB three-color light-emitting layers across all pixels 100. The organic EL film has a structure in which a hole injection layer, a hole transport layer, a first light-emitting layer, a light-emitting separation layer, a second light-emitting layer, a third light-emitting layer, an electron transport layer, and an electron injection layer are stacked in order, a so-called one-stack structure. The first light-emitting layer is, for example, a red light-emitting layer. The second light-emitting layer is, for example, a blue light-emitting layer. The third light-emitting layer is, for example, a green light-emitting layer. In this embodiment, the one-stack organic layer 114 has at least the hole injection layer separated or thinned between pixels 100.

[0040] Furthermore, the organic layer 114 may have two light emission separation layers between the light emission layers. Also, the light emission layer may consist of two colors: a blue light emission layer and a yellow light emission layer. In addition, the organic layer 114 can have a structure in which a hole injection layer, a hole transport layer, a first light emission layer, an electron transport layer, a charge generation layer, a hole injection layer, a hole transport layer, a second light emission layer, an electron transport layer, and an electron injection layer are stacked in order from the bottom, a so-called two-stack structure. The two-stack structure is also called a tandem structure. The light emission layer may consist of three colors: a blue light emission layer, a green light emission layer, and a red light emission layer, and there may be light emission separation layers between the light emission layers. In the two-stack organic EL film according to this embodiment, at least the lower layers up to the charge generation layer are separated or thinned between the pixels 100.

[0041] The hole injection layer injects holes from the first electrode 115. The hole transport layer assists in the injection of holes into the light-emitting layer. These hole injection layer and hole transport layer can be composed of, for example, copper phthalocyanine, hexaazatriphenylene (HAT), and α-NPD.

[0042] The red light-emitting layer generates red light when an electric field is applied, by recombining some of the holes injected from the first electrode 115 through the hole injection layer and hole transport layer with some of the electrons injected from the second electrode 113 through the electron transport layer. The red light-emitting layer includes, for example, at least one of a red light-emitting material, a hole transport material, an electron transport material, and a dual charge transport material. The red light-emitting material may be fluorescent or phosphorescent. Specifically, the red light-emitting layer is composed of, for example, 4,4-bis(2,2-diphenylbinin)biphenyl (DPVBi) mixed with 30% by weight of 2,6-bis[(4'-methoxydiphenylamino)styryl]-1,5-dicyanonaphthalene (BSN).

[0043] The emission separation layer is a layer for adjusting the injection of carriers into the emission layers. By injecting electrons and holes into each emission layer via this emission separation layer, the emission balance of each color is adjusted. The emission separation layer is composed of, for example, a 4,4'-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl derivative.

[0044] The blue light-emitting layer generates blue light when an electric field is applied, as a portion of the holes injected from the first electrode 115 through the hole injection layer, hole transport layer, and light emission separation layer recombine with a portion of the electrons injected from the second electrode 113 through the electron transport layer.

[0045] The blue light-emitting layer includes, for example, at least one of the following: a blue light-emitting material, a hole-transporting material, an electron-transporting material, and a dual-charge-transporting material. The blue light-emitting material may be fluorescent or phosphorescent. Specifically, the blue light-emitting layer is composed of, for example, a mixture of DPVBi and 2.5% by weight of 4,4'-bis[2-{4-(N,N-diphenylamino)phenyl}vinyl]biphenyl (DPAVBi).

[0046] The green light-emitting layer generates green light when an electric field is applied, as a portion of the holes injected from the first electrode 115 via the hole injection layer, hole transport layer, and light emission separation layer recombine with a portion of the electrons injected from the second electrode 113 via the electron transport layer.

[0047] The green light-emitting layer includes, for example, at least one of the following: a green light-emitting material, a hole-transporting material, an electron-transporting material, and a dual-charge-transporting material. The green light-emitting material may be fluorescent or phosphorescent. Specifically, the green light-emitting layer is composed of, for example, a mixture of DPVBi and 5% by weight of coumarin 6.

[0048] Examples of electron transport layers include BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), Alq3 (aluminum quinolinol), and Bphen (basophenanthroline). The electron transport layer consists of at least one layer and may include an electron transport layer doped with an alkali metal or alkaline earth metal.

[0049] The alkali metal or alkaline earth metal-doped electron transport layer is composed of a host material such as BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), Alq3 (aluminum quinolinol), or Bphen (basophenanthroline), to which an alkali metal such as lithium (Li), sodium (Na), potassium (K), rubidium (Rb), and cesium (Cs), or an alkaline earth metal such as magnesium (Mg), calcium (Ca), strontium (Sr), and barium (Ba) is co-deposited to dopant material at a concentration of, for example, 0.5 to 15% by weight.

[0050] The electron injection layer is designed to enhance electron injection from the cathode, for example, Li, Mg, Ca, LiF, Li ２ CO ３ , Cs, Cs ２ CO ３ , Yb and Yb ２ O ３ It consists of individual elements or mixtures containing them.

[0051] The thickness of each layer constituting the organic layer 114 is preferably 1 to 20 nm for the hole injection layer, 10 to 200 nm for the hole transport layer, 5 to 50 nm for the light emission layer, and 10 to 200 nm for the electron transport layer. The thickness of the organic layer 114 and each of the layers constituting it is set to a value such that the optical film thickness enables the aforementioned operation corresponding to the wavelength of each color pixel.

[0052] The second electrode 113 is made of a material with good light transmittance and a low work function. The second electrode 113 is made of a metal layer such as magnesium (Mg), silver (Ag), and their alloys, and a transparent conductive material such as indium tin oxide (ITO) and indium zinc oxide (IZO). The second electrode may also be a multilayer film, for example, the first layer may be made of calcium (Ca), barium (Ba), lithium (Li), cesium (Cs), indium (In), magnesium (Mg), and silver (Ag), and the second layer may be made of a metal layer such as magnesium (Mg), silver (Ag), or their alloys. The metal layer as a semi-transparent cathode of the microcavity structure is preferably set to a range of 3 to 20 nm. Furthermore, it is desirable that the transparent conductive material be made to a film thickness of 3 to 200 nm.

[0053] Furthermore, the multilayer film of the second electrode 113 may be composed of the same type of material. For example, the second electrode 113 may be composed of a first layer and a second layer which are alloy metal layers of magnesium (Mg) and silver (Ag), and the ratios of Mg and Ag in the first and second layers may be different. For example, the Ag concentration in the first layer (lower layer) may be low, and the Ag concentration in the second layer (upper layer) may be high. In this way, electron injection performance can be improved while increasing the light extraction efficiency. Another example of a laminated configuration is to make the first layer a semi-transparent reflective film of MgAg and the second layer a transparent electrode of IZO. This makes it possible to improve electron injection performance and semi-transparent reflective function in the first layer, and to improve conductivity in the second layer while avoiding step breaks due to unevenness and suppressing defects such as panel voltage drop.

[0054] The second electrode 113 is connected to the potential supply wiring through a contact hole in the cathode contact section located on the outer periphery of the panel.

[0055] As described above, the optical adjustment layer 150 is placed between the reflector 140 and the light-emitting element ELP, and is configured to have a thickness corresponding to the wavelength to be resonated. In this resonance, the upper surface of the reflector 140 becomes the first reflective surface, and the lower surface of the second electrode 113 becomes the second reflective surface. For each pixel 100, the optical distance between the first and second reflective surfaces is set according to the emission wavelength. This forms a microcavity structure that can efficiently extract light from the light-emitting part from the top surface.

[0056] The thickness of each layer constituting the optical distance L between the first and second reflective surfaces is set to a thickness that satisfies the resonance condition 2L / λ + Φ / 2π = m (where m is an integer) for each color pixel with respect to the emission peak wavelength λ. This resonance order m may differ for each RGB, thereby changing the relative thicknesses of the optical adjustment layers in pixels 100R, 100G, and 100B. Therefore, by adjusting the resonance order m for each RGB, it is possible to assign sub-color pixels of any emission color according to the eaves height.

[0057] The protective film 194 is intended to prevent moisture from entering the organic layer and is formed with a thickness of 0.5 to 8 μm using a material with low permeability and water permeability. The material for the protective film 194 is silicon nitride (SiN ｘ ), silicon dioxide (SiO ｘ ), silicon oxynitride (SiO ｘ N ｙ ), aluminum oxide (AlO ｘ ), titanium oxide (TiO ｘ ) or a combination of these is used.

[0058] The color filter 195 is an optical filter that transmits light of a predetermined wavelength. The color filter 195 located at pixel 100R transmits red light. The color filter 195 located at pixel 100G transmits green light. The color filter 195 located at pixel 100B transmits blue light.

[0059] The planarization film 196 planarizes the surface of the color filter 195.

[0060] The on-chip lens 197 focuses the light from the light-emitting element ELP.

[0061] The adhesive 198 is used to bond the opposing substrate 199 to the upper surface of the color filter 195. This adhesive 198 can be made of a thermosetting resin.

[0062] The opposing substrate 199 encloses the display device 10. The opposing substrate 199 can be made of a glass plate. The opposing substrate 199 may also be provided with a light-shielding film that acts as a color filter or black matrix. This enhances the color purity of the light generated by the light-emitting element ELPs and absorbs ambient light reflected in the wiring between each light-emitting element ELP, thereby improving contrast. A hard coat layer or a transparent film can also be used instead of the opposing substrate 199.

[0063] As described above, a protrusion 170 is provided on the optical adjustment layer 150. This protrusion 170 is positioned near the edge of the surface of the optical adjustment layer 150 that is close to the light-emitting element ELP, and is configured to protrude in a direction substantially parallel to the surface of the substrate 160. The protrusion 170 in Figure 4 shows an example where it is positioned on the side surface of the dielectric layer 153. Specifically, the protrusion 170 is shown as being composed of a portion of the dielectric layer 153 that protrudes in the direction of the surface of the substrate 160. The protrusion 170 is also positioned around the dielectric layer 153.

[0064] As described above, the optical adjustment layer 150 in Figure 4 comprises a plurality of dielectric layers (dielectric layers 151 to 153). The protrusion 170 can be formed on the side surface of at least one of the dielectric layers. The protrusion 170 can also be placed on the layer closest to the organic layer 114 among the plurality of dielectrics.

[0065] Figure 5 is a diagram showing an example of the pixel configuration according to the first embodiment of this disclosure. The figure is an enlarged view of pixels 100B and 100G. The function of the protrusion 170 will be explained using this figure.

[0066] Figure 5 shows examples of pixels 100B and 100G using a single-stack organic layer 114. The organic layer 114 in the figure includes a hole injection layer 301 and a hole transport layer 302. As shown in the figure, protrusions 170 are arranged on the dielectric layer 153. These protrusions 170 are configured at different heights for each pixel 100. TL and TR in the figure represent the height of the protrusions 170 for pixel 100B and pixel 100G, respectively. A gap 175 is formed below the protrusions 170. Due to the action of the protrusions 170, the dielectric layer 152 takes on a shape where its side surface is recessed towards the center of the pixel 100.

[0067] The organic layer 114 is formed by laminating it onto the substrate 160 on which the optical adjustment layer 150 is arranged. When forming the organic layer 114, the hole injection layer 301 is formed first as a film, and then the hole transport layer 302 is formed as a film. However, in a plan view, the side surface of the dielectric layer 152 is separated from the end of the protrusion 170 toward the center of the pixel 100, so the first hole injection layer 301 to be formed cannot adhere to the side surface of the dielectric layer 152 and instead reaches and deposits on the surface of the insulating layer 161 at the boundary of the pixel 100. As a result, the hole injection layer 301 is divided in the region at the edge of the pixel 100. Even if the hole injection layer 301 is not broken, its film thickness decreases in the region at the edge of the pixel 100. Similarly, the second hole transport layer 302 to be formed is also divided between adjacent pixels 100. This prevents the formation of leak paths between pixels 100.

[0068] In contrast, the other layers of the organic layer 114 and the second electrode 113 that are formed thereafter are not separated between the pixels 100, but are configured in a continuous shape, because the region between the pixels 100 is raised by the previously deposited hole injection layer 301, etc. This allows the second electrodes 113 to be connected to each other between the pixels 100.

[0069] Figures 6A-6C illustrate the effects of the first embodiment of the present disclosure. As described above, in the display device 10 of the present disclosure, the height of the protrusion 170 (TL and TR in Figure 5) differs in adjacent pixels 100. This improves the effect of configuring the upper second electrode 113 in a continuous shape while separating the hole injection layer 301, etc., located in the lower layer of the organic layer 114 between pixels 100.

[0070] Figures 6A and 6B show a comparative example where the height of the protrusion 170 is the same for adjacent pixels 100. Figure 6A shows the case where the height of the protrusion 170 is low. Because the height of the protrusion 170 is low, the thinning of the hole injection layer 301 near the protrusion 170 is not sufficiently performed, and the separation of the hole injection layer 301 between pixels 100 becomes incomplete.

[0071] Figure 6B shows the case where the height of the protrusion 170 is high. Because the height of the protrusion 170 is high, the hole injection layer 301 between the pixels 100 can be completely separated. On the other hand, the second electrode 113 is separated between the pixels 100. This is because the amount of sinking of the organic layer 114 in the region between the pixels 100 increases due to the height of the protrusion 170. Thus, when the protrusion 170 has a symmetrical shape between adjacent pixels 100, it becomes difficult to achieve both "separation of the leak path" and "connection of the second electrode 113" between the pixels 100.

[0072] Figure 6C shows the case where the heights of the protrusions 170 of adjacent pixels 100 are different. The left pixel 100 in the figure has a protrusion 170 at the same height as the pixel 100 in Figure 6A, and the right pixel 100 has a protrusion 170 at the same height as the pixel 100 in Figure 6B. In this case, the hole injection layer 301 is divided between the pixels 100 by the higher position of the protrusion 170 of the right pixel 100 in the figure. In addition, the division of the second electrode 113 between the pixels 100 is avoided. This is because the protrusion 170 of the left pixel 100 in the figure is at a relatively low position, which reduces the amount of sinking of the organic layer 114 in that region.

[0073] Figure 7 shows another example of a pixel configuration according to the first embodiment of the present disclosure. The figure shows examples of pixels 100B and 100G using a two-stack organic layer 114. The organic layer 114 in the figure includes a hole injection layer 301, a hole transport layer 302, and a charge generation layer 308. In the organic layer 114 of the figure, the hole injection layer 301 and the hole transport layer 302 are separated between adjacent pixels 100. In addition to the hole injection layer 301 and the hole transport layer 302, the charge generation layer 308 also needs to be separated between pixels 100 in the two-stack organic layer 114 because it could become a leak path.

[0074] Figure 8 is a diagram illustrating the effects of the first embodiment of the present disclosure. The figure shows an example of a pixel 100 having a two-stack organic layer 114. The organic layer 114 in the figure is composed of a hole injection layer 301, a hole transport layer 302, a first light-emitting layer, an electron transport layer, a charge generation layer 308, a hole transport layer, a second light-emitting layer, a third light-emitting layer, an electron transport layer, and an electron injection layer, which are stacked in order. As described above, the organic layers 114 are in contact with each other in a state that is offset in the stacking direction between adjacent pixels 100B and 100G. Therefore, contact between hole injection layers 301 and charge generation layers 308 between pixels 100 can be avoided. In addition, the hole injection layer 301 and the charge generation layer 308 are in contact with electron transport layers of opposite polarity. This makes it possible to suppress the movement of charge between pixels 100.

[0075] Thus, even in pixels 100 having tandem organic layers 114 such as two-stack or three-stack structures, where the problem of leakage between pixels 100 becomes more pronounced, applying the configuration of this disclosure can effectively suppress leakage between pixels 100.

[0076] In this way, by arranging the protrusions 170, the hole injection layer 301, hole transport layer 302, and charge generation layer 308 of the organic layer 114 can be separated between the pixels 100. This reduces charge leakage between the pixels 100.

[0077] Furthermore, since the protrusion 170 is positioned on the optical adjustment layer 150, the hanging portion of the second electrode 113 between the pixels 100 is separated from the end of the first electrode 115. This also reduces charge leakage between the first electrode 115 and the second electrode 113.

[0078] <Method for Manufacturing Display Elements> Figure 9A-9I shows an example of a method for manufacturing a display element according to the first embodiment of this disclosure. Figure 9A-9I shows an example of the manufacturing process for the pixel 100 portion of the display device 10.

[0079] First, elements such as transistors are formed on the substrate 160, and wiring regions including various wirings are formed on the surface of the substrate 160. Next, an insulating layer 161 is formed on the surface of the wiring regions of the substrate 160. This can be done, for example, by CVD (Chemical Vapor Deposition). Next, a base layer 141 and a reflector 140 are placed on the surface of the insulating layer 161. This can be done by sputtering. Next, the insulating layer 161 is laminated to create a shape in which the base layer 141 and the reflector 140 are embedded. Next, the insulating layer 161 on top of the reflector 140 is removed, exposing the reflector 140 on the surface (Figure 9A).

[0080] Next, a material film 401 of the dielectric layer 151 is placed on the surface of the reflector 140 (Figure 9B). This can be done, for example, by CVD. Next, a material film 402 of the dielectric layer 152 is placed. Steps are formed in this material film 402 for each pixel 100 (Figure 9C). Next, a material film 403 of the dielectric layer 153 is placed (Figure 9D).

[0081] Next, the first electrode 115 is placed on the surface of the material film 403 (Figure 9E). This can be done by sputtering. Then, a resist 404 is formed on the surface of the material film 403. An opening 405 is placed in this resist 404 in the region between the pixels 100 (Figure 9F).

[0082] Next, the resist 404 is used as a mask to etch the material films 401, 402, and 403 to form dielectric layers 151, 152, and 153. In this process, by using a material with a higher etching rate than the material film 403 for the material film 402, it is possible to form a dielectric layer 152 with a recessed side shape and a dielectric layer 153 with an outward-protruding edge shape. This forms the protruding portion 170. After that, the resist 404 is removed (Figure 9G).

[0083] Next, an organic layer 114 is formed (Figure 9H). Specifically, it is formed in the following order: a hole implantation layer, a hole transport layer, a red light emission layer, a light emission separation layer, a blue light emission layer, a green light emission layer, an electron transport layer, and an electron implantation layer, for example, by vapor deposition. Next, a second electrode 113 is formed (Figure 9I). This can be done, for example, by vapor deposition.

[0084] Subsequently, a protective film 194, a color filter 195, a planarization film 196, and an on-chip lens 197 are formed. Through these steps, a pixel 100 can be manufactured.

[0085] As described above, the display device 10 of the first embodiment of this disclosure can separate the hole injection layer 301, etc., at the bottom layer of the light-emitting element ELP at the boundary of the pixel 100 by arranging a protrusion 170 that protrudes to the outside of the pixel 100 on the optical adjustment layer 150 of the pixel 100. This makes it possible to restrict the movement of charge from adjacent pixels 100 interposed by the hole injection layer 301, etc., and to reduce charge leakage. As a result, a display device 10 with reduced display unevenness and crosstalk can be provided.

[0086] (3. Second Embodiment) A variation of the display device 10 of the first embodiment described above will be explained.

[0087] <Configuration of the protruding portion> Figures 10A-10D show examples of the configuration of the protruding portion according to the second embodiment of the present disclosure. Figures 10A-10D are schematic cross-sectional views showing examples of the configuration of the protruding portion 170. Figure 10A shows an example of a protruding portion 170 configured in a tapered shape. Figure 10B shows an example in which the side surface of the dielectric layer 152 is a slope. Figure 10C shows an example in which the side surface of the dielectric layer 152 is a curved surface. Figure 10D shows an example in which the dielectric layers 151 and 153 have different widths.

[0088] <Configuration of the Optical Adjustment Layer> Figures 11A-11C show examples of the configuration of the optical adjustment layer according to the second embodiment of the present disclosure. Figures 11A-11C are schematic cross-sectional views showing an example of the configuration of the optical adjustment layer 150. Figure 11A shows an example of the optical adjustment layer 150 comprising four or more dielectric layers. Specifically, this figure shows an example of the optical adjustment layer 150 comprising dielectric layers 151 to 155. Figure 11B shows an example in which a recess 162 is formed in the insulating layer 161 at the boundary of the pixel 100. Figure 11C shows an example in which dielectric layers 151 to 155 are provided and the lower dielectric layers are configured to be continuous in adjacent pixels 100.

[0089] <Pixel Configuration> Figure 12 is a diagram showing an example of the pixel configuration according to the second embodiment of the present disclosure. The figure is a schematic cross-sectional view showing an example of the configuration of a pixel 100. The pixel 100 in the figure shows an example in which a pixel defining layer 176 is arranged on the surface of the optical adjustment layer 150. The pixel defining layer 176 limits the light-emitting region. An opening 177 is arranged in the center of this pixel defining layer 176. The pixel defining layer 176 is made of, for example, silicon oxide (SiO ｘ ), silicon nitride (SiN ｘ ), silicon oxynitride (SiON) and aluminum oxide (AlO ｘ It can be made of an inorganic insulating film such as ). In addition, the pixel defining layer 176 can also be formed of an organic insulating film such as a polyimide resin, an acrylic resin, or a novolac resin.

[0090] Figures 13A-13C show other examples of pixel configurations according to the second embodiment of the present disclosure. Figures 13A-13C are schematic cross-sectional views showing an example of the configuration of a pixel 100. Figure 13A shows an example in which a step is formed in the insulating layer 161 and the height of the optical adjustment layer 150 is aligned in pixels 100B, 100G, and 100R. Figure 13B shows an example of a pixel 100 in which a pixel regulating layer 176 is further arranged in the pixel 100 of Figure 13A. Figure 13C shows an example in which an optical adjustment layer 150 comprising four or more dielectric layers is arranged in the pixel 100 of Figure 13A.

[0091] Figures 14A-14F show other examples of pixel configurations according to the second embodiment of the present disclosure. Figures 14A-14F are schematic plan views showing an example of the configuration of pixel 100. Reference numerals are omitted in Figures 14A-14F for convenience. The circles in the figures represent contact portions that electrically connect the reflector 140 and the first electrode 115. Figure 14A shows an example in which pixels 100B, 100G, and 100R are configured to be the same size, similar to Figure 3. Figure 14B shows an example in which pixels 100B, 100G, and 100R are configured to be different sizes. Figure 14C shows an example in which pixels 100B, 100G, and 100R are configured to be square in shape. Figure 14D shows an example in which pixels 100G and 100R are configured to be square in shape, and pixel 100B is configured to be rectangular in shape. Figure 14E shows an example where pixels 100B, 100G, and 100R are configured in a hexagonal shape. Figure 14F shows an example where pixels 100B, 100G, and 100R are configured in a hexagonal shape and are adjacent to each other at the edges of the hexagon.

[0092] Figure 15 is a diagram showing another example of a pixel configuration according to the second embodiment of this disclosure. This figure is a schematic plan view showing an example of the configuration of a pixel 100. Reference numerals are omitted in this figure for convenience. This figure shows an example of a pixel 100 configured in a hexagonal shape. Furthermore, the pixels 100 in this figure are shown adjacent to each other at the edges of the hexagon. In addition, in this figure, multiple pixels 100 of different types are arranged adjacent to each other. The cross-sectional structure of the pixel 100 in this figure will be explained using Figures 16A and 16B.

[0093] Figures 16A and 16B show other examples of pixel configurations according to the second embodiment of the present disclosure. Figures 16A and 16B show the cross-sectional configuration of the pixel 100 shown in Figure 15.

[0094] Figure 16A shows the cross-sectional configuration of the portion of pixel 100B and pixel 100R, and represents the cross-section along the line a-a' in Figure 15. Due to the large step difference between pixel 100B and pixel 100R, there is a possibility that the second electrode 113 may be severed between pixel 100B and pixel 100R.

[0095] Figure 16B shows the cross-sectional configuration of the portion of pixels 100B and 100G, and represents the cross-section along the line b-b' in Figure 15. The step difference between pixels 100B and 100G is relatively small. Therefore, the second electrode 113 is not divided between pixels 100B and 100G. In this way, by adopting the arrangement of pixels 100 shown in Figure 15, even if a fracture occurs in the second electrode 113 between some pixels 100, power can be supplied to all pixels 100.

[0096] The configuration of the display device 10 other than that described above is the same as that of the display device 10 in the first embodiment of this disclosure, so a description will be omitted.

[0097] (4. Third Embodiment) In the first embodiment of the display device 10 described above, the optical adjustment layer 150 of the pixel 100 was composed of a plurality of dielectric films. In contrast, the third embodiment of the display device 10 of this disclosure differs from the first embodiment described above in that the optical adjustment layer 150 of the pixel 100 is composed of the first electrode 115 of the light-emitting element ELP.

[0098] <Configuration of the display device> Figure 17 is a diagram showing an example of the configuration of a pixel according to the third embodiment of the present disclosure. This figure is a schematic cross-sectional view showing an example of the configuration of a pixel 100, similar to Figure 4. The pixel 100 in this figure differs from the pixel 100 in Figure 4 in that the optical adjustment layer 150 is composed of a first electrode 115 and a protruding portion (protruding portion 172) is arranged on the pixel defining layer 176.

[0099] As described above, the optical adjustment layer 150 in Figure 17 is composed of the first electrode 115 of the light-emitting element ELP. That is, the first electrode 115 is both an electrode of the light-emitting element ELP and also functions as the optical adjustment layer 150. This first electrode 115 is configured with different thicknesses in pixels 100B, 100G, and 100R. The first electrode 115 can be composed of a transparent electrode.

[0100] A pixel defining layer 176 is placed in the pixel 100 of Figure 17. A protrusion 172 is placed on this pixel defining layer 176. Specifically, the protrusion 172 is formed by the end of the pixel defining layer 176 extending outwards in a direction substantially parallel to the surface of the substrate 160.

[0101] <Method for Manufacturing Display Elements> Figure 18A-18J shows an example of a method for manufacturing a display element according to the third embodiment of this disclosure. Figure 18A-18J shows an example of the manufacturing process for the pixel 100 portion of the display device 10.

[0102] First, the underlayer 141 and the reflector 140 are placed on the surface of the insulating layer 161 (Figure 18A).

[0103] Next, a material film 410 of the first electrode 115 is placed on the surface of the reflector 140 in the region where pixel 100R is formed (Figure 18B). This can be done, for example, by sputtering. Next, a material film 411 of the first electrode 115 is placed on the surface of the reflector 140 in the region where pixels 100R and 100G are formed (Figure 18C). Next, a material film 412 of the first electrode 115 is placed on the surface of the reflector 140 in the region where pixels 100R, 100G, and 100B are formed (Figure 18D). As a result, a first electrode 115 is formed on each pixel 100.

[0104] Next, an insulating film 413 is placed on the surface of the substrate 160 (Figure 18E). The insulating film 413 is, for example, SiO Ｘ It can be constructed as follows. Next, an insulating material film 414 is placed between the pixels 100 (Figure 18F). The insulating material film 414 is, for example, SiN Ｘ It can be composed of the following.

[0105] Next, a material film 415 for the pixel defining layer 176 is placed on the surface of the substrate 160 (Figure 18H). Then, the material film 415 is etched to form the opening 177 (Figure 18H). This can be done, for example, by dry etching.

[0106] Next, a resist 417 is formed on the surface. An opening 418 is placed in the region between the pixels 100 in this resist 417 (Figure 18I). Next, the material film 415, insulating material film 414, and insulating film 413 are etched using the resist 417 as a mask to form the pixel defining layer 176 and the protrusions 172 (Figure 18J). The subsequent steps are the same as in Figures 9H and 9I, so their explanation is omitted.

[0107] The configuration of the display device 10 other than that described above is the same as that of the display device 10 in the first embodiment of this disclosure, so a description will be omitted.

[0108] Thus, in the third embodiment of the present disclosure, the display device 10 has an optical adjustment layer 150 of the pixel 100 composed of the first electrode 115 of the light-emitting element ELP. In this configuration of the optical adjustment layer 150, a protrusion 172 can also be arranged. Charge leakage between pixels 100 can be reduced.

[0109] (5. Fourth Embodiment) A variation of the display device 10 of the third embodiment described above will be explained.

[0110] <Configuration of the Optical Adjustment Layer> Figure 19 is a diagram showing an example of the configuration of the optical adjustment layer according to the fourth embodiment of the present disclosure. The figure is a schematic cross-sectional view showing an example of the configuration of the optical adjustment layer 150. In the optical adjustment layer 150 shown in the figure, a connecting layer 143 is arranged below the first electrode 115. This connecting layer 143 facilitates the electrical connection between the reflector 140 and the first electrode 115. The connecting layer 143 is made of, for example, Ti, TiN and TiO ２ It can be constructed in this manner. Furthermore, the connecting layer 143 has a portion that protrudes in a direction substantially parallel to the surface of the substrate 160. A protrusion 173 can be formed on this protruding portion. In this way, the pixel 100 in the figure is equipped with a multi-stage protrusion, which can improve the ability to separate the hole injection layer 301 and the like between pixels 100.

[0111] <Configuration of the protruding portion> Figures 20A-20D show examples of the configuration of the protruding portion according to the fourth embodiment of the present disclosure. Figures 20A-20D show examples of the configuration of the protruding portion 172. Figure 20A shows an example of a protruding portion 172 that is configured in multiple layers. In this protruding portion 172, the first layer is made of SiO Ｘ The second layer is made of SiN Ｘ The third layer is made of SiO Ｘ The structure can be configured such that the first and third layers cover the second layer.

[0112] Figure 20B shows an example of a thinned projection 172. Since the surfaces of the first electrode 115 and the projection 172 are configured to be flat, the step at the edge of the light-emitting region can be reduced, and edge emission can be suppressed.

[0113] Figure 20C shows an example of a protrusion 172 formed on a tapered first electrode 115. Because the side surface of the first electrode 115 is tapered, connectivity between pixels 100 in each layer of the organic layer 114 can be improved after the hole injection layer 301 and the hole transport layer 302 have been separated.

[0114] Figure 20D shows an example of a projection 172 having a portion that recedes inward toward the pixel 100. Because this projection 172 has a shape that protrudes in alternating inward and outward directions, it can improve the segmentation effect of the hole injection layer 301 and the like.

[0115] <Pixel Configuration> Figures 21A-21C show examples of pixel configurations according to the fourth embodiment of this disclosure. Figures 21A-21C are schematic plan views showing examples of pixel configurations, similar to Figure 14A, etc. Figure 21A shows an example in which pixels 100B, 100G, and 100R are each configured in rectangular shapes of different sizes. Figure 21B shows an example in which pixels 100G and 100R are configured in a square shape, and pixel 100B is configured in a rectangular shape. Figure 21C shows an example of a pixel 100 configured in a hexagonal shape. Unlike the pixels 100 in Figures 14A-14D and 15, the pixels 100 shown in Figures 21A-21C can omit the contact portion. This makes it easier to narrow the pitch of the pixels 100, and a higher-resolution display device 10 can be configured.

[0116] The configuration of the display device 10 other than that described above is the same as that of the display device 10 in the third embodiment of this disclosure, so a description will be omitted.

[0117] (6. Fifth Embodiment) In the first embodiment of the display device 10 described above, the hole injection layer 301 of the organic layer 114 was divided between the pixels 100. In contrast, the fifth embodiment of the display device 10 of this disclosure differs from the first embodiment described above in that inter-pixel wiring is further arranged between the pixels 100.

[0118] <Pixel Configuration> Figure 22 is a diagram showing an example of the pixel configuration according to the fifth embodiment of the present disclosure. This figure is a schematic plan view showing an example of the configuration of a pixel 100, similar to Figure 15. It differs from the pixel 100 in Figure 15 in that inter-pixel wiring 193 is arranged between the pixels 100. The thick lines in this figure represent the inter-pixel wiring 193. This inter-pixel wiring 193 is configured to surround the pixel 100. The inter-pixel wiring 193 draws in leakage current from the pixel 100. The inter-pixel wiring 193 is an example of the "conductor layer" of the present disclosure.

[0119] Figure 23 is a diagram showing an example of the configuration of pixels according to the fifth embodiment of the present disclosure. The figure is a schematic cross-sectional view showing an example of the configuration of pixels 100R, 100G, and 100B. Between the pixels 100, an optical adjustment layer 159 having the same configuration as the optical adjustment layer 150 is arranged. Protrusions are also formed on the optical adjustment layer 159. Inter-pixel wiring 193 is arranged on this optical adjustment layer 159. The inter-pixel wiring 193 can be made of, for example, Al.

[0120] By arranging the optical adjustment layer 159, the ability of the organic layer 114 to separate holes and other defects can be improved. Furthermore, the indentation of recesses between pixels 100 when forming the organic layer 114 can be reduced, thereby suppressing the separation of the second electrode 113 and other defects. In addition, the inter-pixel wiring 193 further reduces charge leakage from the pixels 100. Since a separation structure to counteract charge leakage is provided at a location away from the light-emitting region of the pixels 100, problems such as edge emission at the boundary of the light-emitting region can also be avoided.

[0121] Figure 24 shows another example of a pixel configuration according to the fifth embodiment of this disclosure. This figure shows the pixel 100 shown in Figure 17 with inter-pixel wiring 193 applied.

[0122] The configuration of the display device 10 other than that described above is the same as that of the display device 10 in the first embodiment of this disclosure, so a description will be omitted.

[0123] Thus, in the fifth embodiment of the present disclosure, the display device 10 has inter-pixel wiring 193 arranged in a shape that surrounds the pixels 100, which further reduces charge leakage from the pixels 100.

[0124] (7. Sixth Embodiment) Modifications of the first and third embodiments described above will now be explained.

[0125] <On-chip lens configuration> Figures 25A and 25B show examples of on-chip lens configurations according to the sixth embodiment of the present disclosure. Figures 25A and 25B show examples of on-chip lenses 197 configured to be different in size for each pixel 100.

[0126] Figure 25A shows an example of on-chip lenses 197 configured with different widths for each pixel 100. In the figure, pixel 100B is fitted with an on-chip lens 197 with the same width as pixel 100. In the figure, pixel 100G is fitted with an on-chip lens 197 with a reduced width. In the figure, pixel 100R is fitted with an on-chip lens 197 with an even reduced width.

[0127] Figure 25B shows an example of on-chip lenses 197 configured at different heights for each pixel 100. Pixel 100G in the figure has an on-chip lens 197 that is lower in height than the on-chip lens 197 of pixel 100B. Pixel 100R in the figure has an on-chip lens 197 that is even lower in height.

[0128] Figures 26A and 26B show other configuration examples of on-chip lenses according to the sixth embodiment of the present disclosure. Figures 26A and 26B show an example in which a plurality of on-chip lenses 197 are arranged in a pixel 100B. Figure 26A shows the cross-sectional configuration of the pixel 100, and Figure 26B shows the planar configuration of the pixel 100. In Figure 26B, the dashed-dotted circles represent the on-chip lenses 197.

[0129] <Connection of the First Electrode and Reflector> Figures 27A-27D show an example of the connection of the first electrode and reflector according to the sixth embodiment of the present disclosure. Figures 27A-27D show an example in which a contact portion 145 connecting the first electrode 115 and the reflector 140 is arranged.

[0130] Figure 27A shows an example in which the first electrode 115 and the reflector 140 are connected by a connecting layer 144 located at the bottom of the first electrode 115. The connecting layer 144 connects to the reflector 140 at a hole formed in the optical adjustment layer 150 in the contact portion 145. Normally, if the first electrode 115, which is made of a transparent electrode (such as ITO), and the reflector 140, which is made of a metal (such as an Al alloy), are directly electrically connected, the connection resistance may be high. Therefore, TiN, TiO ２ By connecting the first electrode 115 and the reflector 140 via a connecting layer 144 made of Ti or the like, the connection resistance can be reduced, enabling a stable connection.

[0131] Figure 27B shows an example in which the first electrode 115 and the reflector 140 are connected by a connecting layer 144 positioned on the upper surface of the first electrode 115. The connecting layer 144 connects to the first electrode 115 in the contact portion 145 and to the reflector 140 at the holes formed in the optical adjustment layer 150.

[0132] Figure 27C shows an example having multiple contact parts (contact parts 145 and 146).

[0133] Figure 27D shows an example in which there are multiple contact portions (contact portions 145 and 147) and a connecting layer 144 is located below the dielectric layer 153. The connecting layer 144 connects to the reflector 140 at contact portion 145 and to the first electrode 115 at contact portion 147.

[0134] The contact portion 145, etc., is arranged in the pixel 100 of the first embodiment. In contrast, in the pixel 100 of the third embodiment, the reflector 140 and the first electrode 115 are directly stacked, so the contact portion 145, etc., is unnecessary. As shown in Figure 19, a connecting layer 143 can also be placed between the reflector 140 and the first electrode 115.

[0135] <Second Electrode> Figure 28 shows an example of a second electrode according to the sixth embodiment of the present disclosure. This figure illustrates the connection of the second electrode 113 at the end of the display device 10. A contact portion 149 having the same configuration as the optical adjustment layer 150 is arranged at the end of the pixel array portion. A columnar wiring 148 is arranged in this contact portion 145 to connect the contact wiring 167 arranged in the insulating layer 161 to the second electrode 113. The contact wiring 167 is connected to wiring 169 via a via plug 168. This wiring 169 is wiring that supplies voltage to the second electrode 113. A base layer is arranged below the contact wiring 167 and wiring 169, respectively.

[0136] <Protective Layer> Figures 29A and 29B show an example of a protective layer according to the sixth embodiment of the present disclosure. Figures 29A and 29B show an example of a protective layer composed of a laminated film.

[0137] Figure 29A shows an example of a protective layer in pixel 100. The protective layer in the figure comprises a first protective layer 330, a second protective layer 332, and a third protective layer 334, which are stacked in order. The first protective layer 330 and the third protective layer 334 can be made of an inorganic material, such as SiON. The second protective layer 332 can be made of an organic material, such as acrylic resin.

[0138] Figure 29B shows an example of a protective layer at the edge of the display device 10. It is desirable that the first protective layer 330 and the third protective layer 334 are connected at the edge of the display device 10. In this way, even if there is a large step in the layer that forms the base of the protective film, it is possible to prevent the intrusion of foreign matter and moisture into defects. As a result, the reliability of the display device 10 can be improved in this modified example.

[0139] Alternatively, the first protective layer 330 and the third protective layer 334 may be a laminated film of inorganic protective films with excellent barrier properties such as SiN and AlO, and the second protective layer 332 may be a film with excellent coating properties such as SiN and SiON. This makes it possible to increase the thickness of the protective film to improve optical properties.

[0140] <Color Filters> Figures 30A-30D show an example of a color filter according to the sixth embodiment of the present disclosure. A color filter 195 may be provided on a pixel 100. As shown in Figure 30A, a blue color filter 195b may be provided on pixel 100B, a green color filter 195g on pixel 100G, and a red color filter 195r on pixel 100R. By providing a color filter 195, the color purity can be increased. In this modified example, it is not limited to providing a color filter 195 on all pixels 100, but it may be provided on only some of the pixels 100.

[0141] Furthermore, as shown in Figure 30B, partitions 191 may be provided between the color filters 195. The partitions 191 are made of a light-transmitting material and are placed between the color filters 195 to suppress color mixing between adjacent pixels 100. In addition, as shown in Figures 30A and 30B, parts of adjacent color filters 195 may be overlapped to function as a light-shielding film. Also, the film thickness of the color filter 195 for one of the three colored pixels 100R, 100G, and 100B (red, blue, and green) may be thinner than the partitions 191, and the film thickness of the color filter 195 for the other pixel 100 may be thicker than the partitions 191. In this embodiment, since the pixels 100 have a microcavity structure, the color purity is high, and therefore it is possible to make the color filters 195 thinner. In this modified example, by making at least some of the color filters thinner, the light loss in the color filters 195 can be reduced and the light extraction efficiency can be increased.

[0142] Furthermore, as shown in Figure 30C, a light-shielding section may be arranged between the pixels 100, consisting of three color filters 195r, 195g, and 195b stacked on top of each other. By stacking the color filters 195, the light-shielding capability can be improved. Even if an uneven structure exists in the lower layer as in this disclosure, the occurrence of color mixing due to light leakage between adjacent pixels 100 can be suppressed.

[0143] Furthermore, as shown in Figure 30D, color filters 195b, 195g, and 195r of different colors may be stacked on the outer periphery of the display area to function as a peripheral light-shielding film 190. Since the formation of the peripheral light-shielding film 340 can be carried out simultaneously with the formation of the color filters 195, a light-shielding function can be added without increasing the number of steps, and adverse optical effects can be reduced.

[0144] Furthermore, optical components such as the color filter 195 may be enclosed in a protective film (not shown). It is also preferable to form an inorganic protective film (not shown) so as to cover the top and bottom of the color filter 195, and to connect these inorganic protective films at the outer periphery of the display area. By creating a multi-layered protective film enclosing the color filter 195 in this way, outgassing from the inside and intrusion of moisture from the outside can be suppressed. As a result, this modified example improves the reliability of the display device 10.

[0145] Furthermore, the color filter 195 may be positioned with an offset within the plane of the display area relative to the center of the pixel aperture. By shifting the relative positional relationship from the center to the outer edge of the display area, the viewing angle characteristics can be improved. Details of this will be described later.

[0146] <Organic Layer> Figures 31 and 32 show an example of an organic layer according to the sixth embodiment of the present disclosure. Figures 31 and 32 are cross-sectional views illustrating an example of the configuration of the organic layer, and in detail show a cross-section of the layer structure of the organic layer 114. In this modified example, variations of the organic layer 114 will be described.

[0147] The upper left of Figure 31 shows a cross-section of the organic layer 114 of the first embodiment described above. In this example, the organic layer 114 has a structure in which, for example, a hole injection layer, a hole transport layer, a first light-emitting layer, a light-emitting separation layer, a second light-emitting layer, a third light-emitting layer, an electron transport layer, and an electron injection layer are sequentially stacked from the bottom, a so-called one-stack structure. Also, as shown in the upper right of Figure 31, there may be two light-emitting separation layers between the light-emitting layers. Furthermore, as shown in the middle left of Figure 31, the light-emitting layer may be composed of two colored layers: a first light-emitting layer and a second light-emitting layer. In this case, a yellow light-emitting layer is applied to the second light-emitting layer.

[0148] Furthermore, as shown in the middle right of Figure 31, the organic layer 114 may have a structure in which a hole injection layer, a hole transport layer, a first light-emitting layer, an electron transport layer, a charge generation layer, a hole transport layer, a second light-emitting layer, an electron transport layer, and an electron injection layer are sequentially stacked from the bottom, a so-called two-stack structure. Also, as shown in the lower left of Figure 31, the light-emitting layer may be composed of three colors: a first light-emitting layer, a second light-emitting layer, and a third light-emitting layer. Moreover, as shown in the lower right of Figure 31, there may be a light-emitting separation layer between the light-emitting layers.

[0149] Furthermore, as shown in the upper part of Figure 32, the light-emitting layers of the red, green, and blue light-emitting layers may be partially painted. Also, as shown in the middle part of Figure 32, the light-emitting layers may be painted to include either an electron block layer or a hole block layer, or both. Moreover, as shown in the lower part of Figure 32, the red and green light-emitting layers may be partially painted, and then the blue light-emitting layer may be laminated as a common layer.

[0150] Furthermore, each light-emitting layer may be constructed by stacking layers of different materials of the same color. By creating a multilayer structure with light-emitting layers having different properties, the functions can be separated. As a result, localized degradation within the light-emitting layer is suppressed, and a highly efficient and long-life device can be obtained.

[0151] (8. Example of inter-pixel structure for preventing inter-pixel leakage) An inter-pixel structure for preventing leakage between pixels 100 will be described. In the following description, pixel 100 includes a light-emitting element 12. The light-emitting element 12 includes a first electrode 121, an organic layer 122, and a second electrode 123. An insulating layer 13 is arranged around the light-emitting element 12.

[0152] In one embodiment of the display device 10, the organic layer 122 is connected between adjacent light-emitting elements 12 in the in-plane direction of the first surface of the substrate 11, and is a common layer for multiple light-emitting elements 12. Therefore, in one embodiment of the display device 10, there is a risk of current leakage occurring between adjacent light-emitting elements 12. Below, examples of leakage suppression structures for suppressing such current leakage between light-emitting elements 12 will be described. In the following examples 1 to 7, examples will be described in which the organic layer 122 has two light-emitting units U1 and U2.

[0153] (Leak suppression structure: First example) Figure 33 is a cross-sectional view of the first example of a leak suppression structure. Note that in Figure 33, the layers above the second electrode 123 are omitted from the illustration. Similarly, in the cross-sectional views illustrating the second to ninth examples of leak suppression structures, the layers above the second electrode 123 are omitted from the illustration.

[0154] The insulating layer 13 has an opening 13a on each first electrode 121 and covers the first electrode 121 from the peripheral edge of the first surface to the side surface (end face). Specifically, the insulating layer 13 has a side wall portion 13b and an extended portion 13c. The side wall portion 13b is erected perpendicular to the first surface of the substrate 11 and covers the side surface of the first electrode 121. The extended portion 13c extends from the upper end of the inner circumferential surface of the side wall portion 13b toward the center of the first surface of the first electrode 121 and covers the peripheral edge of the first surface of the first electrode 121.

[0155] The inner circumference of the opening 13a of the insulating layer 13 has a canopy-shaped overhang 132b that extends toward the center of the opening 13a. The overhang 132b is separated from the first surface of the first electrode 121. Preferably, the overhang 132b is provided along the entire circumference of the peripheral edge of the opening 13a, but it may also be provided on a part of the entire circumference of the peripheral edge of the opening 13a.

[0156] The light-emitting unit U1 and charge generation layer 1227 contained in the organic layer 122 are cut or made highly resistive by the protruding portion 132b (region A shown in Figure 33). This makes it possible to suppress current leakage between adjacent light-emitting elements 12. Here, increased resistance means that the light-emitting unit U1 and charge generation layer 1227 become highly resistive due to their extremely thin film thickness at the protruding portion 132b. The cutting or increased resistance of the light-emitting unit U1 and charge generation layer 1227 by the protruding portion 132b can occur due to the shadowing effect of the protruding portion 132b during the deposition of the organic layer 122. A gap 132c may be formed between the protruding portion 132b and the first electrode 121.

[0157] The insulating layer 13 has a first insulating layer 131 and a second insulating layer 132, respectively, on the first surface of the substrate 11 and on the first surface of the first electrode 121. The first insulating layer 131 has a plurality of first openings 131a. The second insulating layer 132 has a plurality of second openings 132a. The openings 13a are composed of overlapping first openings 131a and second openings 132a. The inner circumference of the second opening 132a of the second insulating layer 132 protrudes inward from the opening 13a than the inner circumference of the first opening 131a of the first insulating layer 131, forming a protruding portion 132b.

[0158] (Leak suppression structure: second example) Figure 34 is a cross-sectional view of a second example of a leak suppression structure. The second example differs from the first example in that the insulating layer 13 has a third insulating layer 133 in addition to the first insulating layer 131 and the second insulating layer 132.

[0159] The third insulating layer 133 is provided between the substrate 11 and the first insulating layer 131, and between the first electrode 121 and the first insulating layer 131. The third insulating layer 133 has a third opening 133a on the first surface of the first electrode 121. In the second example, the opening 13a is composed of overlapping first openings 131a, second opening 132a, and third opening 133a. The inner circumference of the third opening 133a protrudes inward from the opening 13a more than the inner circumference of the first opening 131a. A gap 132c may be formed between the protruding portion 132b and the third insulating layer 133.

[0160] (Leak suppression structure: Third and fourth examples) In the first and second examples, examples were described in which the inner circumference of the opening 13a of the insulating layer 13 has one protrusion 132b. However, the number of protrusions on the inner circumference of the opening 13a of the insulating layer 13 is not limited to these examples, and the inner circumference of the opening 13a of the insulating layer 13 may have two or more protrusions. Below, an example in which the inner circumference of the opening 13a of the insulating layer 13 has two protrusions (third example), and an example in which the inner circumference of the opening 13a of the insulating layer 13 has three protrusions (fourth example) will be described.

[0161] Figure 35 is a cross-sectional view of a third example of the leak suppression structure. The third example differs from the second example in that the insulating layer 13 has a fourth insulating layer 134 and a fifth insulating layer 135 in order on the first surface of the second insulating layer 132, and the inner circumference of the opening 13a of the insulating layer 13 has two overhang-like protrusions 132b and 135b.

[0162] The light-emitting unit U1 and the charge-generating layer 1227 contained in the organic layer 122 are cut or have their resistance increased by the protruding portions 132b and 135b. The protruding portion 135b is positioned higher than the protruding portion 132b with reference to the first surface of the first electrode 121 and is separated from the first surface of the second insulating layer 132. The protruding portion 135b is recessed further away from the center of the opening 13a than the protruding portion 132b.

[0163] The fourth insulating layer 134 has a fourth opening 134a. The fifth insulating layer 135 has a fifth opening 135a. In the third example, the opening 13a is composed of overlapping first openings 131a, 2nd opening 132a, 3rd opening 133a, 4th opening 134a, and 5th opening 135a. The inner circumference of the 4th opening 134a is recessed further away from the center of the opening 13a than the inner circumference of the 2nd opening 132a and the inner circumference of the 5th opening 135a. The inner circumference of the 5th opening 135a protrudes further inward from the opening 13a than the 4th opening 134a, forming a protruding portion 135b.

[0164] Figure 36 is a cross-sectional view of a fourth example of the leak suppression structure. The fourth example differs from the third example in that the insulating layer 13 has a sixth insulating layer 136 and a seventh insulating layer 137 in order on the first surface of the fifth insulating layer 135, and the inner circumference of the opening 13a of the insulating layer 13 has three overhang-like protrusions 132b, 135b, and 137b.

[0165] The light-emitting unit U1 and the charge-generating layer 1227 contained in the organic layer 122 are cut or made highly resistant by the protruding portions 132b, 135b, and 137b. The protruding portion 137b is positioned higher than the protruding portion 135b with reference to the first surface of the first electrode 121 and is separated from the first surface of the fifth insulating layer 135. The protruding portion 137b is recessed further away from the center of the opening 13a than the protruding portion 135b.

[0166] The sixth insulating layer 136 has a sixth opening 136a. The seventh insulating layer 137 has a seventh opening 137a. In the fourth example, the opening 13a is composed of overlapping first openings 131a, 2nd opening 132a, 3rd opening 133a, 4th opening 134a, 5th opening 135a, 6th opening 136a, and 7th opening 137a. The inner circumference of the 6th opening 136a is recessed in a direction away from the center of the opening 13a compared to the inner circumference of the 5th opening 135a and the inner circumference of the 7th opening 137a. The inner circumference of the 7th opening 137a protrudes inward from the 6th opening 136a, forming a protruding portion 137b.

[0167] (Leak suppression structure: Fifth example) Figure 37 is a cross-sectional view of the fifth example of the leak suppression structure. The fifth example differs from the second example in that the insulating layer 13 has an eighth insulating layer 138 in addition to the first insulating layer 131, the second insulating layer 132, and the third insulating layer 133, and the inner circumference of the opening 13a of the insulating layer 13 has two overhang-like protrusions 132b and 133b.

[0168] The light-emitting unit U1 and the charge-generating layer 1227 contained in the organic layer 122 are cut or made highly resistant by the protruding portions 132b and 133b. The protruding portion 133b protrudes further inward into the opening 13a than the protruding portion 132b. The protruding portion 133b is positioned lower than the protruding portion 132b with reference to the first surface of the first electrode 121. The protruding portion 133b is spaced apart from the first surface of the first electrode 121.

[0169] The eighth insulating layer 138 is provided between the substrate 11 and the third insulating layer 133, and between the first electrode 121 and the third insulating layer 133. The eighth insulating layer 138 has an eighth opening 138a. In the fifth example, the opening 13a is composed of overlapping first openings 131a, second opening 132a, third opening 133a, and eighth opening 138a. The inner circumference of the third opening 133a of the third insulating layer 133 protrudes inward from the opening 13a more than the inner circumference of the eighth opening 138a of the eighth insulating layer 138, forming an overhang 133b.

[0170] (Leak suppression structure: 6th example) Figure 38 is a cross-sectional view of the 6th example of the leak suppression structure. The 6th example differs from the 1st example in that the insulating layer 13 has an overhang 13b1 on the outer circumference of the side wall 13b instead of an overhang 132b on the inner circumference of the opening 13a. Figure 24 shows an example in which the insulating layer 13 has a single-layer structure, but it may also have a laminated structure of two or more layers.

[0171] The protruding portion 13b1 extends outward from the outer periphery of the side wall portion 13b. A recess 13b2 is provided at a predetermined distance below the upper end of the outer periphery of the side wall portion 13b. By providing the recess 13b2 on the outer periphery of the side wall portion 13b in this way, the protruding portion 13b1 is configured at the upper end of the outer periphery of the side wall portion 13b. It is preferable that the protruding portion 13b1 and the recess 13b2 are provided around the entire circumference of the outer periphery of the side wall portion 13b, but they may also be provided on a part of the entire circumference of the outer periphery of the side wall portion 13b.

[0172] The light-emitting unit U1 and charge generation layer 1227 contained in the organic layer 122 are cut or have high resistance due to the protruding portion 132b (region A shown in Figure 38). This makes it possible to suppress current leakage between adjacent light-emitting elements 12.

[0173] In the sixth example, an example was described in which the outer periphery of the side wall portion 13b has one protrusion 13b1 and one recess 13b2. However, the number of protrusions 13b1 and recesses 13b2 on the outer periphery of the side wall portion 13b is not limited to this example, and the outer periphery of the side wall portion 13b may have two or more protrusions 13b1 and two or more recesses 13b2. In this case, the two or more recesses 13b2 may be provided sequentially at predetermined intervals from the upper end to the lower end of the outer periphery of the side wall portion 13b.

[0174] (Leak suppression structure: 7th example) Figure 39 is a cross-sectional view of the 7th example of a leak suppression structure. A groove 13Gv is provided between adjacent light-emitting elements 12. The groove 13Gv may be provided between adjacent light-emitting elements 12 in a predetermined direction (for example, the Y-axis direction), or it may be provided so as to surround the light-emitting elements 12. The groove 13Gv is formed across the insulating layer 13 and the insulating layer 112.

[0175] The light-emitting unit U1 and the charge generation layer 1227 contained in the organic layer 122 are cut or made highly resistive by the groove 13Gv. This makes it possible to suppress current leakage between adjacent light-emitting elements 12. Here, "high resistance" means that the light-emitting unit U1 and the charge generation layer 1227 become extremely thin films within the groove 13Gv, thereby increasing their resistance. Among the layers contained in the organic layer 122, the light-emitting unit U2 located above the charge generation layer 1227 straddles the groove 13Gv.

[0176] (9. Modifications) <9.1 Modification 1> Next, as a modification of the embodiment of the present disclosure, a modification concerning the relationship between the normal LN passing through the pixel 100 (more specifically, the center of a plurality of light-emitting elements ELPs contained in one pixel 100), the normal LN' passing through the center of the lens member (more specifically, the on-chip lens 197), and the normal LN" passing through the center of the wavelength selection unit (more specifically, the color filter 195) will be described with reference to Figures 40A to 40G. Figures 40A to 40G are conceptual diagrams for explaining the relationship between the normal LN passing through the center of the light-emitting unit, the normal LN' passing through the center of the lens member, and the normal LN" passing through the center of the wavelength selection unit. In the following description, the center of the pixel 100 will be referred to as the center of the light-emitting unit.

[0177] In embodiments of this disclosure, the size of the wavelength selection section (e.g., color filter 195) may be appropriately changed in response to the light emitted by the pixel 100. Furthermore, if a light-absorbing layer (black matrix layer) is provided between the wavelength selection section (e.g., color filter 195) of an adjacent pixel 100, the size of the light-absorbing layer (black matrix layer) may be appropriately changed in response to the light emitted by the pixel 100. In addition, the size of the wavelength selection section (e.g., color filter 195) may be appropriately changed according to the distance (offset amount) d0 between the normal passing through the center of the pixel 100 and the normal passing through the center of the color filter 195. The planar shape of the wavelength selection section (e.g., color filter 195) may be the same as, similar to, or different from the planar shape of the lens member (e.g., on-chip lens 197).

[0178] For example, as shown in Figure 40A, the normal vector LN passing through the center of the light-emitting part, the normal vector LN'' passing through the center of the wavelength selection part, and the normal vector LN' passing through the center of the lens member may be made to coincide. In other words, the distance (offset amount) D0 between the normal vector passing through the center of the light-emitting part and the normal vector passing through the center of the lens member and the distance (offset amount) d0 between the normal vector passing through the center of the light-emitting part and the normal vector passing through the center of the wavelength selection part can be equal to 0 (zero).

[0179] Furthermore, as shown in Figure 40B, for example, the normal vector LN passing through the center of the light-emitting part and the normal vector LN'' passing through the center of the wavelength-selecting part coincide, but the normal vector LN passing through the center of the light-emitting part and the normal vector LN'' passing through the center of the wavelength-selecting part do not have to coincide with the normal vector LN' passing through the center of the lens member. In other words, D0 ≠ d0 = 0.

[0180] Furthermore, as shown in Figure 40C, for example, the normal vector LN passing through the center of the light-emitting part, the normal vector LN'' passing through the center of the wavelength-selecting part, and the normal vector LN' passing through the center of the lens member do not coincide, while the normal vector LN'' passing through the center of the wavelength-selecting part and the normal vector LN' passing through the center of the lens member may coincide. In other words, D0 = d0 > 0 is also possible.

[0181] Furthermore, as shown in Figure 40D, for example, the normal vector LN passing through the center of the light-emitting part, the normal vector LN'' passing through the center of the wavelength-selecting part, and the normal vector LN' passing through the center of the lens member do not coincide, and the normal vector LN' passing through the center of the lens member does not coincide with the normal vector LN passing through the center of the light-emitting part and the normal vector LN'' passing through the center of the wavelength-selecting part. Here, it is preferable that the center of the wavelength-selecting part (shown as a black square in Figure 40D) is located on a straight line LL connecting the center of the light-emitting part and the center of the lens member (shown as a black circle in Figure 40D). Specifically, when LL1 is the distance from the center of the light-emitting part in the thickness direction to the center of the wavelength-selecting part, and LL2 is the distance from the center of the wavelength-selecting part in the thickness direction to the center of the lens member, it is preferable that D0 > d0 > 0, and that d0:D0 = LL1:(LL1 + LL2) is satisfied, taking into account manufacturing variations.

[0182] Furthermore, the stacking relationship between the wavelength tip and the lens member may be reversed. In such a case, for example, as shown in Figure 40E, the normal LN passing through the center of the light-emitting part, the normal LN'' passing through the center of the wavelength-selecting part, and the normal LN' passing through the center of the lens member may coincide. In other words, D0 = d0 = 0.

[0183] Furthermore, for example, as shown in Figure 40F, the normal vector LN passing through the center of the light-emitting part, the normal vector LN'' passing through the center of the wavelength-selecting part, and the normal vector LN' passing through the center of the lens member do not coincide, while the normal vector LN'' passing through the center of the wavelength-selecting part and the normal vector LN' passing through the center of the lens member may coincide. In other words, D0 = d0 > 0 is also possible.

[0184] Furthermore, as shown in the conceptual diagram Figure 40G, the normal vector LN passing through the center of the light-emitting part, the normal vector LN'' passing through the center of the wavelength-selecting part, and the normal vector LN' passing through the center of the lens member do not coincide, and the normal vector LN' passing through the center of the lens member does not coincide with the normal vector LN passing through the center of the light-emitting part and the normal vector LN'' passing through the center of the wavelength-selecting part. Here, it is preferable that the center of the wavelength-selecting part is located on the straight line LL connecting the center of the light-emitting part and the center of the lens member. Specifically, when LL1 is the distance from the center of the light-emitting part in the thickness direction to the center of the wavelength-selecting part (shown as a black square in Figure 40G), and LL2 is the distance from the center of the wavelength-selecting part in the thickness direction to the center of the lens member (shown as a black circle in Figure 24G), it is preferable that d0 > D0 > 0, and that D0:d0 = LL2:(LL1 + LL2) is satisfied, taking into account manufacturing variations.

[0185] <9.2 Modification 2> In this modification, the name subpixel 1100 is used instead of pixel 100. The subpixel 1100 applicable to the display device according to the embodiment of the present disclosure described above can be configured to have a resonator structure that resonates the light generated in the light-emitting part (organic layer 114). The resonator structure will be described below with reference to Figures 41A to 41G. Figure 41A is a schematic cross-sectional view illustrating a first example of the resonator structure, Figure 41B is a schematic cross-sectional view illustrating a second example of the resonator structure, and Figure 41C is a schematic cross-sectional view illustrating a third example of the resonator structure. Furthermore, Figure 41D is a schematic cross-sectional view illustrating a fourth example of the resonator structure, and Figure 41E is a schematic cross-sectional view illustrating a fifth example of the resonator structure. Furthermore, Figure 41F is a schematic cross-sectional view illustrating a sixth example of the resonator structure, and Figure 41G is a schematic cross-sectional view illustrating a seventh example of the resonator structure.

[0186] (Resonator Structure: First Example) Figure 41A is a schematic cross-sectional view illustrating the first example of a resonator structure. In the first example, the first electrode (e.g., anode electrode) 1202 is formed with a common film thickness in each subpixel 1100. The same applies to the second electrode (e.g., cathode electrode) 1206.

[0187] As shown in Figure 41A, a reflector 1401 is positioned below the first electrode 1202 of the subpixel 1100, with an optical adjustment layer 1402 in between. A resonator structure is formed between the reflector 1401 and the second electrode 1206 to resonate the light generated by the organic layer (specifically, the light-emitting part) 1204.

[0188] The reflector 1401 is formed with a common film thickness for each subpixel 1100. The film thickness of the optical adjustment layer 1402 differs depending on the color that the subpixel 1100 is to display. By having optical adjustment layers 1402R, 1402G, and 1402B with different film thicknesses, it is possible to set the optical distance that produces the optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0189] In the example shown in Figure 41A, the upper surfaces of the reflectors 1401 for subpixels 1100R, 1100G, and 1100B are aligned. As described above, the thickness of the optical adjustment layer 1402 differs depending on the color that the subpixel 1100 should display, so the position of the upper surface of the second electrode 1206 differs depending on the type of subpixel 1100R, 1100G, and 1100B.

[0190] The reflector 1401 can be formed using, for example, a metal such as aluminum (Al), silver (Ag), or copper (Cu), or an alloy mainly composed of these metals.

[0191] The optical adjustment layer 1402 is made of silicon nitride (SiN ｘ ), silicon oxide (SiO ｘ ), silicon oxynitride (SiO ｘ N ｙIt can be constructed using inorganic insulating materials such as ) or organic resin materials such as acrylic resins or polyimide resins. The optical adjustment layer 1402 may be a single layer or a laminated film of multiple materials. Also, the number of layers may differ depending on the type of subpixel 1100.

[0192] The first electrode 1202 can be formed using a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO).

[0193] The second electrode 1206 preferably functions as a semi-transparent reflective film. The second electrode 1206 can be formed using magnesium (Mg), silver (Ag), or a magnesium-silver alloy (MgAg) mainly composed of these, or an alloy containing alkali metals or alkaline earth metals.

[0194] (Resonator structure: Second example) Figure 41B is a schematic cross-sectional view illustrating a second example of the resonator structure. In this second example as well, the first electrode 1202 and the second electrode 1206 are formed with a common film thickness in each subpixel 1100.

[0195] In the second example as well, a reflector 1401 is placed beneath the first electrode 1202 of the subpixel 1100, with an optical adjustment layer 1402 in between. A resonator structure is formed between the reflector 1401 and the second electrode 1206 to resonate the light generated by the organic layer 1204. Similar to the first example, the reflector 1401 is formed with a common film thickness for each subpixel 1100, while the film thickness of the optical adjustment layer 1402 differs according to the color that the subpixel 1100 should display.

[0196] In the first example shown in Figure 41A, the upper surfaces of the reflectors 1401 in the subpixels 1100R, 1100G, and 1100B were aligned, while the position of the upper surface of the second electrode 1206 differed depending on the type of subpixel 1100R, 1100G, and 1100B.

[0197] In contrast, in the second example shown in Figure 41B, the upper surface of the second electrode 1206 is arranged to align with the subpixels 1100R, 1100G, and 1100B. In order to align the upper surfaces of the second electrode 1206, the upper surface of the reflector 1401 is arranged differently for the subpixels 1100R, 1100G, and 1100B, depending on the type of subpixel. As a result, the lower surface of the reflector 1401 has a stepped shape depending on the type of subpixel 1100R, 1100G, and 1100B.

[0198] The materials and other components constituting the reflector 1401, the optical adjustment layer 1402, the first electrode 1202, and the second electrode 1206 are the same as those described in the first example, so their explanation will be omitted.

[0199] (Resonator structure: Third example) Figure 41C is a schematic cross-sectional view illustrating a third example of the resonator structure. In this third example as well, the first electrode 1202 and the second electrode 1206 are formed with a common film thickness in each subpixel 1100.

[0200] In the third example, the reflector 1401 is positioned below the first electrode 1202 of the subpixel 1100, with the optical adjustment layer 1402 in between. A resonator structure is formed between the reflector 1401 and the second electrode 1206 to resonate the light generated by the organic layer 1204. Similar to the first and second examples, the thickness of the optical adjustment layer 1402 varies depending on the color that the subpixel 1100 should display. And, similar to the second example, the upper surface of the second electrode 1206 is positioned so that it aligns with the subpixels 1100R, 1100G, and 1100B.

[0201] In the second example shown in Figure 41B, the lower surface of the reflector 1401 had a stepped shape corresponding to the type of sub-pixel 1100R, 1100G, and 1100B in order to align the upper surface of the second electrode 1206.

[0202] In contrast, in the third example shown in Figure 41C, the film thickness of the reflector 1401 is set to differ depending on the type of sub-pixel 1100R, 1100G, and 1100B. More specifically, the film thickness is set so that the lower surfaces of reflectors 1401R, 1401G, and 1401B are aligned.

[0203] The materials constituting the reflector 1401, the optical adjustment layer 1402, the first electrode 1202, and the second electrode 1206 are the same as those described in the first example, so their explanation will be omitted.

[0204] (Resonator structure: 4th example) Figure 41D is a schematic cross-sectional view illustrating the 4th example of a resonator structure.

[0205] In the first example shown in Figure 41A, the first electrode 1202 and the second electrode 1206 of the subpixel 1100 are formed with a common film thickness. A reflector 1401 is placed below the first electrode 1202 of the subpixel 1100, with an optical adjustment layer 1402 in between.

[0206] In contrast, in the fourth example shown in Figure 41D, the optical adjustment layer 1402 is omitted, and the film thickness of the first electrode 1202 is set to differ depending on the type of subpixel 1100R, 1100G, and 1100B.

[0207] The reflector 1401 is formed with a common film thickness for each subpixel 1100. The film thickness of the first electrode 1202 differs depending on the color that the subpixel 1100 is to display. By having the first electrodes 1202R, 1202G, and 1202B have different film thicknesses, it is possible to set the optical distance that produces the optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0208] The materials constituting the reflector 1401, the first electrode 1202, and the second electrode 1206 are the same as those described in the first example, so their explanation will be omitted.

[0209] (Resonator structure: Fifth example) Figure 41E is a schematic cross-sectional view illustrating the fifth example of a resonator structure.

[0210] In the first example shown in Figure 41A, the first electrode 1202 and the second electrode 1206 are formed with a common film thickness in each subpixel 1100. A reflector 1401 is placed below the first electrode 1202 of the subpixel 1100, with an optical adjustment layer 1402 in between.

[0211] In contrast, in the fifth example shown in Figure 41E, the optical adjustment layer 1402 was omitted, and instead, an oxide film 1404 was formed on the surface of the reflector 1401. The thickness of the oxide film 1404 was set to differ depending on the type of subpixel 1100R, 1100G, and 1100B.

[0212] The thickness of the oxide film 1404 varies depending on the color that the subpixel 1100 is to display. By having oxide films 1404R, 1404G, and 1404B with different thicknesses, it is possible to set the optical distance that produces the optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0213] The oxide film 1404 is a film obtained by oxidizing the surface of the reflector 1401, and is composed of, for example, aluminum oxide, tantalum oxide, titanium oxide, magnesium oxide, zirconium oxide, etc. The oxide film 1404 functions as an insulating film for adjusting the optical path length (optical distance) between the reflector 1401 and the second electrode 1206.

[0214] The oxide film 1404, which has a different thickness depending on the type of subpixel 1100R, 1100G, and 1100B, can be formed, for example, as follows.

[0215] First, the container is filled with electrolyte, and the substrate on which the reflector 1401 is formed is immersed in the electrolyte. Then, electrodes are positioned opposite the reflector 1401.

[0216] Then, a positive voltage is applied to the reflector 1401 with the electrode as the reference, and the reflector 1401 is anodized. The thickness of the oxide film formed by anodization is proportional to the voltage value applied to the electrode. Therefore, anodization is performed on each of the reflectors 1401R, 1401G, and 1401B with a voltage corresponding to the type of sub-pixel 1100R, 1100G, and 1100B applied. This makes it possible to form oxide films 1404 of different thicknesses all at once.

[0217] The materials constituting the reflector 1401, the first electrode 1202, and the second electrode 1206 are the same as those described in the first example, so their explanation will be omitted.

[0218] (Resonator Structure: Sixth Example) Figure 41F is a schematic cross-sectional view illustrating the sixth example of a resonator structure. In the sixth example, the subpixel 1100 is constructed by stacking a first electrode 1202, an organic layer 1204, and a second electrode 1206. However, in the sixth example, the first electrode 1202 is formed to serve both as an electrode and a reflector. The first electrode (and reflector) 1202 is made of a material having optical constants selected according to the type of subpixel 1100R, 1100G, and 1100B. By different phase shifts caused by the first electrode (and reflector) 1202, it is possible to set an optical distance that produces optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0219] The first electrode (and reflector) 1202 can be made from a single metal such as aluminum (Al), silver (Ag), gold (Au), or copper (Cu), or from an alloy mainly composed of these metals. For example, the first electrode (and reflector) 1202R of the subpixel 1100R can be made of copper (Cu), and the first electrode (and reflector) 1202G of the subpixel 1100G and the first electrode (and reflector) 1202B of the subpixel 1100B can be made of aluminum.

[0220] The materials and other components constituting the second electrode 1206 are the same as those described in the first example, so we will omit further explanation.

[0221] (Resonator Structure: Seventh Example) Figure 41G is a schematic cross-sectional view illustrating the seventh example of the resonator structure. The seventh example basically applies the sixth example to subpixels 1100R and 1100G, and the first example to subpixel 1100B. In this configuration as well, it is possible to set the optical distance that produces optimal resonance for the wavelength of light corresponding to the color to be displayed.

[0222] The first electrodes (which also serve as reflectors) 1202R and 1202G used in the sub-pixels 1100R and 1100G can be made from elemental metals such as aluminum (Al), silver (Ag), gold (Au), and copper (Cu), or alloys in which these metals are the main components.

[0223] The materials constituting the reflector 1401B, optical adjustment layer 1402B, and first electrode 1202B used in the subpixel 1100B are the same as those described in the first example, so their explanation will be omitted.

[0224] (10. Application Examples) For example, the technology relating to this disclosure may be applied to the display units of various electronic devices. Therefore, examples of electronic devices to which this technology can be applied will be described below.

[0225] (Specific Example 1) Figure 42A is a front view showing an example of the external appearance of the digital still camera 500, and Figure 42B is a rear view showing an example of the external appearance of the digital still camera 500. This digital still camera 500 is a single-lens reflex type with interchangeable lenses, and has an interchangeable shooting lens unit (interchangeable lens) 512 located approximately in the center of the front of the camera body 511, and a grip portion 513 for the photographer to hold on the left side of the front.

[0226] A monitor 514 is provided on the back of the camera body 511, slightly to the left of the center. An electronic viewfinder (eyepiece) 515 is provided above the monitor 514. The photographer can determine the composition by looking through the electronic viewfinder 515 and visually confirming the light image of the subject guided by the shooting lens unit 512. The display device 10 according to the embodiment of this disclosure can be used as the monitor 514 and the electronic viewfinder 515.

[0227] (Specific Example 2) Figure 43 is an external view of a head-mounted display 600. The head-mounted display 600 has, for example, an eyeglass-shaped display unit 611 and ear hooks 612 on both sides for attachment to the user's head. In this head-mounted display 600, the display device 10 according to the embodiment of this disclosure can be used as the display unit 611.

[0228] (Specific Example 3) Figure 44 is an external view of the see-through head-mounted display 634. The see-through head-mounted display 634 consists of a main body 632, an arm 633, and a lens barrel 631.

[0229] The main body 632 is connected to the arm 633 and the eyeglasses 630. Specifically, the long end of the main body 632 is connected to the arm 633, and one side of the main body 632 is connected to the eyeglasses 630 via a connecting member. The main body 632 may also be directly attached to the head of a person.

[0230] The main body 632 houses a control board for controlling the operation of the see-through head-mounted display 634 and a display unit. The arm 633 connects the main body 632 to the lens barrel 631 and supports the lens barrel 631. Specifically, the arm 633 is connected to the end of the main body 632 and the end of the lens barrel 631, respectively, and fixes the lens barrel 631 in place. The arm 633 also houses signal lines for communicating image-related data provided from the main body 632 to the lens barrel 631.

[0231] The lens barrel 631 projects image light, provided from the main body 632 via the arm 633, through the eyepiece lens towards the eyes of the user wearing the see-through head-mounted display 634. In this see-through head-mounted display 634, the display device 10 according to the embodiment of this disclosure can be used in the display section of the main body 632.

[0232] (Specific Example 4) Figure 45 shows an example of the appearance of a television device 710. This television device 710 has, for example, a video display screen section 711 including a front panel 712 and a filter glass 713, and this video display screen section 711 is configured with a display device 10 according to the embodiment of this disclosure.

[0233] (Specific Example 5) Figure 46 shows an example of the appearance of a smartphone 800. The smartphone 800 has a display unit 802 that displays various information, and an operation unit consisting of buttons, etc. that accept user input. The display unit 802 may be the display device 10 according to this embodiment.

[0234] (Specific Example 6) Figures 47A and 47B show the internal configuration of an automobile having a display device 10 according to the embodiment of this disclosure as a display device. More specifically, Figure 47A shows the interior of the automobile from the rear to the front, and Figure 47B shows the interior of the automobile from the diagonally rear to the diagonally front.

[0235] The automobile shown in Figures 47A and 47B includes a center display 911, a console display 912, a head-up display 913, a digital rear mirror 914, a steering wheel display 915, and a rear entertainment display 916. Some or all of these displays can be fitted with the display device 10 according to the embodiment of this disclosure.

[0236] The center display 911 is positioned on the center console 907, facing the driver's seat 901 and the passenger seat 902. Figures 47A and 47B show an example of a horizontally elongated center display 911 extending from the driver's seat 901 to the passenger seat 902, but the screen size and placement of the center display 911 are arbitrary. The center display 911 can display information detected by various sensors (not shown). As a specific example, the center display 911 can display images captured by an image sensor, distance images to obstacles in front of or to the side of the vehicle measured by a ToF (Time of Flight) sensor, and the body temperature of passengers detected by an infrared sensor. The center display 911 can be used to display, for example, at least one of safety-related information, operation-related information, life logs, health-related information, authentication / identification-related information, and entertainment-related information.

[0237] Safety-related information includes information such as drowsiness detection, distraction detection, detection of mischief by a passenger, seatbelt fastening status, and detection of an unattended occupant. This information is detected, for example, by a sensor (not shown) placed on top of the back of the center display 1911. Operation-related information is detected by sensing occupant gestures using sensors. The detected gestures may include the operation of various equipment in the vehicle. For example, the sensor detects the operation of air conditioning equipment, navigation systems, AV (Audio / Visual) systems, lighting systems, etc. Life logs include the life logs of all occupants. For example, life logs include records of each occupant's actions while riding in the vehicle. By acquiring and saving life logs, it is possible to confirm the state of the occupants at the time of an accident. Health-related information is detected by sensing the occupant's body temperature using a temperature sensor and inferring the occupant's health status based on the detected body temperature. Alternatively, the occupant's face may be captured using an image sensor, and the occupant's health status may be inferred from the facial expression captured. Furthermore, the system may engage in automated voice conversations with the occupants and infer their health status based on their responses. Authentication / identification-related information includes keyless entry functions that use sensors for facial recognition and functions that automatically adjust seat height and position based on facial recognition. Entertainment-related information includes functions that use sensors to detect information on how the occupants operate the AV equipment and functions that use sensors to recognize the occupants' faces and provide content suitable for the occupants through the AV equipment.

[0238] The console display 912 can be used, for example, to display life log information. The console display 912 is located near the shift lever 908 on the center console 907 between the driver's seat 901 and the passenger seat 902. The console display 912 can also display information detected by various sensors (not shown). In addition, the console display 912 may display an image of the area around the vehicle captured by an image sensor, or it may display an image showing the distance to obstacles around the vehicle.

[0239] The head-up display 913 is virtually displayed behind the windshield 904 in front of the driver's seat 901. The head-up display 913 can be used to display at least one of the following: safety-related information, operation-related information, life logs, health-related information, authentication / identification-related information, and entertainment-related information. Because the head-up display 913 is often virtually positioned in front of the driver's seat 901, it is suitable for displaying information directly related to the operation of the vehicle, such as the vehicle's speed and fuel (battery) level.

[0240] The digital rearview mirror 914 can not only display the area behind the vehicle but also show the condition of the passengers in the rear seat. By placing a sensor (not shown) on top of the back of the digital rearview mirror 914, it can be used, for example, to display life log information.

[0241] The steering wheel display 915 is positioned near the center of the steering wheel 906 of the automobile. The steering wheel display 915 can be used to display at least one of the following: safety-related information, operation-related information, life log, health-related information, authentication / identification-related information, and entertainment-related information. In particular, because the steering wheel display 915 is located near the driver's hands, it is suitable for displaying life log information such as the driver's body temperature, or information related to the operation of AV equipment, air conditioning equipment, etc.

[0242] The rear entertainment display 916 is mounted on the back of the driver's seat 901 and the passenger seat 902, and is intended for viewing by rear-seat passengers. The rear entertainment display 916 can be used to display at least one of the following: safety-related information, operation-related information, life logs, health-related information, authentication / identification-related information, and entertainment-related information. In particular, because the rear entertainment display 916 is in front of the rear-seat passengers, it displays information relevant to the rear-seat passengers. For example, it may display information related to the operation of AV equipment or air conditioning equipment, or it may display the results of measurements of the rear-seat passengers' body temperature, etc., taken by a temperature sensor (not shown).

[0243] Furthermore, the effects described herein are merely illustrative and not limiting, and other effects may also occur.

[0244] Furthermore, this technology can also take the following configurations: (1) A display element comprising a plurality of pixels arranged on a substrate, each emitting light of a different wavelength, wherein each of the plurality of pixels has: a light-emitting element comprising a first electrode, an organic layer and a second electrode; a reflective layer disposed between the substrate and the light-emitting element to reflect light from the light-emitting element; a light-transmitting layer disposed between the reflective layer and the organic layer to adjust the optical path length; and a protruding portion disposed on the light-transmitting layer that extends in the direction of the substrate plane, wherein each of the plurality of pixels has a light-transmitting layer of a different thickness. (2) The display element according to (1), wherein each of the plurality of pixels has a protruding portion that is at a different height from the bottom of the light-transmitting layer. (3) The display element according to (1) or (2), wherein the light-transmitting layer comprises a plurality of dielectric layers, and the protruding portion is formed on the side surface of at least one of the plurality of dielectric layers. (4) The display element according to (3), wherein the light-transmitting layer is disposed on the layer in which the dielectric layer on which the protruding portion is formed is closest to the organic layer. (5) The display element according to (3), wherein the protrusion is composed of a portion of the dielectric layer that extends in the plane direction of the substrate. (6) The display element according to (3), wherein the thickness of the dielectric layer on which the protrusion is not formed differs for each of the plurality of pixels. (7) The display element according to any one of (1) to (6), further comprising a pixel defining layer disposed on the upper surface of the light-emitting element. (8) The display element according to (1) or (2), wherein the light-emitting element is composed of the first electrode, the organic layer and the second electrode stacked in order, and the light-transmitting layer is composed of the first electrode. (9) The display element according to (8), wherein the light-transmitting layer is composed of a transparent electrode and has a thickness that differs for each of the plurality of pixels. (10) The display element according to (8) or (9), further comprising a pixel defining layer configured to surround the light-transmitting layer, wherein the protrusion is formed on the side surface of the pixel defining layer. (11) The display element according to any one of (1) to (10), wherein the organic layer comprises a hole injection layer, a hole transport layer, a first light-emitting layer, a light-emitting separation layer, a second light-emitting layer, an electron transport layer, and an electron injection layer.(12) The display element according to (11), wherein the organic layer comprises the hole injection layer configured to be separated between adjacent pixels. (13) The display element according to (12), further comprising the hole transport layer configured to be separated between adjacent pixels. (14) The display element according to any one of (1) to (10), wherein the organic layer comprises the hole injection layer, the hole transport layer, the first light-emitting layer, the electron transport layer, the charge generation layer, the hole transport layer, the second light-emitting layer, the third light-emitting layer, the electron transport layer, and the electron injection layer. (15) The display element according to (14), wherein the organic layer comprises the charge generation layer configured to be separated between adjacent pixels. (16) The display element according to any one of (1) to (15), wherein the light-emitting element is configured by sequentially stacking the first electrode, the organic layer, and the second electrode, and the second electrode is configured to be continuous between adjacent pixels. (17) The display element according to any one of (1) to (16), wherein the protrusion is configured to have a height of 5 to 200 nm from the bottom of the light-transmitting layer. (18) The display element according to any one of (1) to (17), wherein the protrusion is configured to have a shape that extends 5 to 100 nm from the side surface of the light-transmitting layer. (19) The display element according to any one of (1) to (18), wherein the protrusion has a tapered cross-section. (20) The display element according to any one of (1) to (19), wherein a gap is formed at the lower part of the protrusion. (21) The display element according to any one of (1) to (20), wherein the reflective layer is made of metal. (22) The display element according to any one of (1) to (21), further comprising a conductive layer disposed at the boundary of the pixel.(23) A display device comprising a plurality of pixels arranged on a substrate, each emitting light of a different wavelength, wherein each of the plurality of pixels has: a light-emitting element comprising a first electrode, an organic layer and a second electrode; a reflective layer disposed between the substrate and the light-emitting element for reflecting light from the light-emitting element; a light-transmitting layer disposed between the reflective layer and the organic layer for adjusting the optical path length; and a protruding portion disposed on the light-transmitting layer having a shape that extends in the plane direction of the substrate, wherein each of the plurality of pixels is a display element comprising a light-transmitting layer of a different thickness, and a drive circuit for driving the display elements.

[0245] 10 Display device 12, ELP Light-emitting element 100, 100R, 100G, 100B Pixel 115 First electrode 113 Second electrode 114 Organic layer 160 Substrate 140 Reflector 150, 159 Optical adjustment layer 151, 152, 153 Dielectric layer 170, 172 Protrusion 175 Gap 176 Pixel defining layer 193 Inter-pixel wiring 301 Hole injection layer 302 Hole transport layer 308 Charge generation layer 1100, 1100R, 1100G, 1100B Subpixel

Claims

1. A display element comprising a plurality of pixels arranged on a substrate, each emitting light of a different wavelength, wherein each of the plurality of pixels has: a light-emitting element comprising a first electrode, an organic layer and a second electrode; a reflective layer disposed between the substrate and the light-emitting element to reflect light from the light-emitting element; a light-transmitting layer disposed between the reflective layer and the organic layer to adjust the optical path length; and a protruding portion disposed on the light-transmitting layer that extends in the direction of the substrate plane, wherein each of the plurality of pixels has a light-transmitting layer of a different thickness.

2. The display element according to claim 1, wherein each of the plurality of pixels has a protruding portion having a different height from the bottom of the light-transmitting layer.

3. The display element according to claim 1, wherein the light-transmitting layer comprises a plurality of dielectric layers, and the protrusion is formed on the side surface of at least one of the plurality of dielectric layers.

4. The display element according to claim 3, wherein the light-transmitting layer is arranged in the layer in which the dielectric layer on which the protrusion is formed is closest to the organic layer.

5. The display element according to claim 3, wherein the protruding portion is a portion of the dielectric layer that extends in the planar direction of the substrate.

6. The display element according to claim 3, wherein the thickness of the dielectric layer on which the protrusions are not formed differs for each of the plurality of pixels in the light-transmitting layer.

7. The display element according to claim 1, further comprising a pixel defining layer disposed on the upper surface of the light-emitting element.

8. The display element according to claim 1, wherein the light-emitting element is constructed by sequentially stacking the first electrode, the organic layer, and the second electrode, and the light-transmitting layer is composed of the first electrode.

9. The display element according to claim 8, wherein the light-transmitting layer is composed of transparent electrodes and has a different thickness for each of the plurality of pixels.

10. The display element according to claim 8, further comprising a pixel defining layer configured to surround the light-transmitting layer, wherein the protrusion is formed on the side surface of the pixel defining layer.

11. The display element according to claim 1, wherein the organic layer comprises a hole injection layer, a hole transport layer, a first light-emitting layer, a light-emitting separation layer, a second light-emitting layer, an electron transport layer, and an electron injection layer.

12. The display element according to claim 11, wherein the organic layer comprises a hole injection layer configured to be divided between adjacent pixels.

13. The display element according to claim 1, wherein the organic layer comprises a hole injection layer, a hole transport layer, a first light-emitting layer, an electron transport layer, a charge generation layer, a hole transport layer, a second light-emitting layer, a third light-emitting layer, an electron transport layer, and an electron injection layer.

14. The display element according to claim 13, wherein the organic layer comprises a charge generation layer configured to be divided between adjacent pixels.

15. The display element according to claim 1, wherein the light-emitting element is configured by sequentially stacking the first electrode, the organic layer, and the second electrode, and the second electrode is configured to have a continuous shape between adjacent pixels.

16. The display element according to claim 1, wherein the protruding portion is configured to have a tapered cross-section.

17. The display element according to claim 1, wherein a gap is formed at the lower part of the protruding portion.

18. The display element according to claim 1, wherein the reflective layer is made of metal.

19. The display element according to claim 1, further comprising a conductive layer disposed at the boundary of the pixel.

20. A display device comprising a plurality of pixels arranged on a substrate, each emitting light of a different wavelength, wherein each of the plurality of pixels has: a light-emitting element comprising a first electrode, an organic layer and a second electrode; a reflective layer disposed between the substrate and the light-emitting element to reflect light from the light-emitting element; a light-transmitting layer disposed between the reflective layer and the organic layer to adjust the optical path length; and a protruding portion disposed on the light-transmitting layer having a shape that extends in the plane direction of the substrate, wherein each of the plurality of pixels is a display element having the light-transmitting layer of a different thickness, and a drive circuit for driving the display elements.

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