Gas recovery system of processing device and gas recovery method of processing device

Abstract

[Problem] To reduce the cost required for cleaning processing even if unreacted cleaning gas is generated when removing copper or a copper compound formed on the surface of a member inside a processing chamber. [Solution] A gas recovery system of a processing device, which has a cleaning gas supply unit that supplies a cleaning gas for performing cleaning processing on a member inside a processing chamber, comprises: a gas exhaust unit; an exhaust line that connects the processing chamber and the gas exhaust unit; and a plurality of gas condensation units disposed in the exhaust line. The gas condensation units have pressure containers and convert gas exhausted from the processing chamber into condensates by condensation or deposition in the pressure containers. In the exhaust line, first pressure control valves are disposed between the plurality of gas condensation units and the gas exhaust unit, and, on the basis of the actual pressure in one of the plurality of pressure containers and a target pressure in the pressure container calculated from the actual temperature in the one of the plurality of pressure containers, the opening degree of each of the first pressure control valve is controlled and the pressure in each of the pressure containers is adjusted.

Description

Gas recovery system for processing equipment and gas recovery method for processing equipment

[0001] This disclosure relates to a gas recovery system for a processing device and a gas recovery method for a processing device.

[0002] When forming a copper (Cu) metal film on a substrate by CVD, the organocopper compound Cu(I)hfac™ VS is used in vapor form. Cu(I)hfac™ VS is composed of Cu(O) and Cu(II)(hfac) ２ It is decomposed into Cu(0), and the reaction product Cu(0) is used to form a metal film, but the unreacted Cu(I)hfac™VS and the reaction byproduct Cu(II)(hfac) ２ It is discharged from the processing chamber of the CVD apparatus by the vacuum exhaust section.

[0003] The vacuum exhaust section consists of a vacuum pump and high-temperature trap devices and low-temperature trap devices provided before and after the vacuum pump, respectively (see, for example, Patent Document 1). The high-temperature trap device traps metallic copper Cu(0) by reacting unreacted Cu(I)hfac™ MVS from the processing chamber with a copper trap member placed inside the high-temperature trap device. The low-temperature trap device traps Cu(II)(hfac) under predetermined temperature and pressure. ２ The Cu(II)(hfac) is condensed or solidified and trapped in a trap member placed inside a low-temperature trap device. ２ The recovered Cu(II)(hfac) ２ Play Cu(I)hfacTMVS from here.

[0004] Japanese Patent Publication No. 2000-256856

[0005] The technology disclosed herein reduces the cost of cleaning even when unreacted cleaning gas is generated during the removal of copper or copper compounds formed on the surface of internal components in a processing chamber.

[0006] One aspect of the technology relating to the present disclosure is a gas recovery system for a processing apparatus having a processing chamber and a cleaning gas supply unit that supplies cleaning gas to perform cleaning treatment on components inside the processing chamber, comprising: a gas exhaust unit that exhausts gas from inside the processing chamber; an exhaust line connecting the processing chamber and the gas exhaust unit; a plurality of gas condensers arranged in the exhaust line between the processing chamber and the gas exhaust unit; and a control unit, wherein the cleaning gas supply unit supplies the cleaning gas to the inside of the processing chamber, and each of the plurality of gas condensers has a pressure vessel, and inside the pressure vessel the gas exhausted from the processing chamber is condensed or The gas is condensed and converted into a condensate. In the exhaust line, a first pressure control valve is positioned between the plurality of gas condensation units and the gas exhaust unit to create a pressure difference between the inside of the pressure vessel and the gas exhaust unit. Each of the plurality of gas condensation units is equipped with a pressure gauge to measure the actual pressure inside one of the plurality of pressure vessels and a thermometer to measure the actual temperature inside one of the plurality of pressure vessels. The control unit adjusts the pressure inside the pressure vessel by controlling the opening of the first pressure control valve based on the measured actual pressure and a target pressure inside the pressure vessel calculated from the measured actual temperature.

[0007] According to the technology disclosed herein, even if unreacted cleaning gas is generated when removing copper or copper compounds formed on the surface of internal components of the processing chamber, the cost required for the cleaning process can be reduced.

[0008] This is a schematic diagram illustrating the configuration of a gas recovery system of a processing device according to one embodiment of the technology described herein. Hfac and Cu(Hfac) ２ This graph shows the saturated vapor pressure curve of Cu(Hfac) at different pressures. ２ This graph illustrates the condensation or solidification temperature of Cu(Hfac) gas compared to that of Hfac gas. It shows the condensation or solidification temperature of Cu(Hfac) at different pressures. ２ This graph illustrates the comparison between the condensation or agglutination temperatures of gas A and Hfac gas. It is a schematic diagram illustrating a modified version of the apparatus shown in Figure 1.

[0009] Hfac (hexafluoroacetylacetone) gas is known as a cleaning gas for cleaning and removing a copper (Cu) metal film formed on the surface of a member arranged to be exposed on the inner side surface of a processing chamber. However, when cleaning a Cu metal film with Hfac gas, not all Hfac gas reacts with Cu, and unreacted Hfac gas remains. Hfac gas also reacts with Cu to form a reaction product Cu(Hfac) ２ is produced. Unreacted Hfac gas and Cu(Hfac) ２ are discharged from the processing chamber of the processing apparatus by a vacuum pump, for example, a dry pump.

[0010] Here, when the processing chamber of a processing apparatus that performs metal film cleaning processing becomes larger (that is, the internal volume of the processing chamber increases), it becomes necessary to use a larger amount of Hfac gas as the cleaning gas. As a result, a larger amount of unreacted Hfac gas is generated, so the amount of wasted Hfac gas increases, leading to an increase in the cost required for the cleaning processing. Furthermore, since Hfac gas is toxic, it must be detoxified by a detoxification device when discharged from the processing chamber. If a large amount of unreacted Hfac gas is generated, the load on the detoxification device increases, which raises the running cost of the detoxification device and consequently increases the cost required for the cleaning processing.

[0011] In contrast, the technology according to the present disclosure reduces the cost required for cleaning processing by efficiently recovering and reusing unreacted Hfac gas.

[0012] Hereinafter, an embodiment of the technology according to the present disclosure will be described with reference to the drawings. FIG. 1 is a schematic diagram for explaining the configuration of a gas recovery system of a processing apparatus according to the present embodiment.

[0013] In FIG. 1, the processing apparatus 10 includes a processing chamber 11, a cleaning gas supply unit 12, a dry pump 13 (gas exhaust unit), and an exhaust line 14 which is a pipe connecting the processing chamber 11 and the dry pump 13.

[0014] The processing chamber 11 houses a substrate G containing at least a copper layer on a portion of its surface, and after etching the substrate G, or before etching the substrate G, a cleaning treatment is performed on the components inside the processing chamber. The components inside the processing chamber 11 are the components that make up the processing chamber 11, and include, for example, a shower plate placed on the upper inner surface of the processing chamber 11, the outer periphery of the shower plate, an inner wall plate placed on the inner side and inner bottom surface of the processing chamber 11, and components that make up at least a portion of the mounting base (all not shown), and components that are adjacent to the processing space inside the processing chamber 11 and have a surface exposed to the processing space. During the cleaning treatment, the substrate G is transported out of the processing chamber 11 through an outlet (not shown) provided on the side of the processing chamber. The cleaning gas supply unit 12 supplies Hfac gas as a cleaning gas to the inside of the processing chamber 11. The dry pump 13 exhausts gas from inside the processing chamber 11 to reduce the pressure inside the processing chamber 11. The exhaust line 14 connects the processing chamber 11 and the dry pump 13.

[0015] The processing apparatus 10 also comprises a first gas condenser 15, a second gas condenser 16, and a control unit 17. The first gas condenser 15 and the second gas condenser 16 are arranged in series with respect to the exhaust line 14 between the processing chamber 11 and the dry pump 13. In the exhaust line 14, the first gas condenser 15 is located on the processing chamber 11 side, and the second gas condenser 16 is located on the dry pump 13 side. The first gas condenser 15 has a first pressure vessel 18, and the second gas condenser 16 has a second pressure vessel 19. Inside the first pressure vessel 18 and the second pressure vessel 19, the first gas condenser 15 and the second gas condenser 16 cool the gas exhausted from the processing chamber 11 (hereinafter simply referred to as "exhaust gas") and convert it into condensate. Furthermore, the first gas condensation unit 15 and the second gas condensation unit 16 reduce the pressure inside the first pressure vessel 18 and the second pressure vessel 19, which contain the exhaust gas, and convert it into condensate. In other words, they condense or solidify the exhaust gas and convert it into condensate. In this embodiment, "condensate" includes both substances that have undergone a phase change from a gaseous state to a liquid state and substances that have undergone a phase change from a gaseous state to a solid state. In addition, the first gas condensation unit 15 and the second gas condensation unit 16 convert different components contained in the exhaust gas into condensate by making the temperature and pressure inside the first pressure vessel 18 and the second pressure vessel 19 different, in other words, by making the condensation conditions different.

[0016] In the exhaust line 14, a first pressure control valve 20 is disposed between the second gas condensing unit 16 and the dry pump 13, and a second pressure control valve 21 is disposed between the first gas condensing unit 15 and the second gas condensing unit 16. Further, a third pressure control valve 22 is disposed between the processing chamber 11 and the first gas condensing unit 15. The first pressure control valve 20 generates a pressure difference between the inside of the second pressure vessel 19 and the dry pump 13 by adjusting the degree of communication through the exhaust line 14. The second pressure control valve 21 generates a pressure difference between the inside of the first pressure vessel 18 and the inside of the second pressure vessel 19 by adjusting the degree of communication through the exhaust line 14. The third pressure control valve 22 generates a pressure difference between the inside of the processing chamber 11 and the inside of the first pressure vessel 18 by adjusting the degree of communication through the exhaust line 14. Therefore, in the processing apparatus 10, the pressure inside the processing chamber 11, the pressure inside the first pressure vessel 18, and the pressure inside the second pressure vessel 19 can be made different from each other.

[0017] Further, in the first gas condensing unit 15, a first pressure gauge 23 that measures the actual pressure inside the first pressure vessel 18 and a first thermometer 24 that measures the actual temperature inside the first pressure vessel 18 are disposed. In the second gas condensing unit 16, a second pressure gauge 25 that measures the actual pressure inside the second pressure vessel 19 and a second thermometer 26 that measures the actual temperature inside the second pressure vessel 19 are disposed.

[0018] Furthermore, the processing apparatus 10 includes a condensate recovery container 27 and a recovery pipe 28 connecting the second pressure vessel 19 and the condensate recovery container 27. An on / off valve 29 is provided in the recovery pipe 28 to control the communication between the second pressure vessel 19 and the condensate recovery container 27. Condensate converted from exhaust gas in the second pressure vessel 19 flows into the condensate recovery container 27 via the recovery pipe 28, and the condensate recovery container 27 stores the incoming condensate. The processing apparatus 10 also includes a heater 30 (heating mechanism) for heating the condensate recovery container 27, a condensate thermometer 31 for measuring the temperature of the condensate stored in the condensate recovery container 27, and a reuse pipe 32 connecting the condensate recovery container 27 and the cleaning gas supply unit 12. In the processing apparatus 10, the gas (hereinafter referred to as "recycled gas") generated by heating the condensate stored in the condensate recovery container 27 by the heater 30 is supplied from the condensate recovery container 27 to the cleaning gas supply unit 12 via the reuse piping 32. The condensate recovery container 27 may also be connected to the first pressure vessel 18 via other recovery piping.

[0019] The cleaning gas supply unit 12 includes an Hfac gas supply source 33 and a gas supply pipe 34 connecting the Hfac gas supply source 33 and the processing chamber 11. The Hfac gas supply source 33 supplies Hfac gas into the processing chamber 11 via a flow rate adjustment mechanism, an MFC (Mass Flow Controller) 35, and an on / off valve 36, located in the gas supply pipe 34. The reuse piping 32 is also connected to the gas supply pipe 34, and the reuse gas is supplied into the processing chamber 11 via an MFC 37 and an on / off valve 38 located in the reuse piping 32. The MFC 35 and the on / off valve 36 control the flow rate of Hfac gas supplied from the Hfac gas supply source 33 into the processing chamber 11, and the MFC 37 and the on / off valve 38 control the flow rate of reuse gas supplied from the condensate recovery container 27 into the processing chamber 11.

[0020] Further, the first pressure vessel 18 of the first gas condensing section 15 contains a first temperature-controlled trap 39, and the second pressure vessel 19 of the second gas condensing section 16 contains a second temperature-controlled trap 40. Furthermore, the processing apparatus 10 includes a chiller 41 (temperature control mechanism) that supplies a temperature adjustment medium (hereinafter abbreviated as "temperature medium") to the first temperature-controlled trap 39 and the second temperature-controlled trap 40, and a thermometer (not shown) that measures the temperatures of the first temperature-controlled trap 39 and the second temperature-controlled trap 40. The temperatures of the first temperature-controlled trap 39 and the second temperature-controlled trap 40 are adjusted by the temperature medium supplied from the chiller 41. Components (for example, reaction products) in the exhaust gas that come into contact with the temperature-adjusted first temperature-controlled trap 39 or second temperature-controlled trap 40 are cooled and converted into condensed matter, which adheres to the first temperature-controlled trap 39 or the second temperature-controlled trap 40 as condensed matter.

[0021] The chiller 41 can supply temperature media of different temperatures to the first temperature-controlled trap 39 and the second temperature-controlled trap 40. This makes it possible to set the temperature of the first temperature-controlled trap 39 and the temperature of the second temperature-controlled trap 40, and consequently the actual temperature inside the first pressure vessel 18 and the actual temperature inside the second pressure vessel 19, to be different from each other.

[0022] In the processing apparatus 10, the temperature inside the first pressure vessel 18 is affected by the temperature of the first temperature-controlled trap 39, and the temperature inside the second pressure vessel 19 is affected by the temperature of the second temperature-controlled trap 40. Accordingly, the control unit 17 controls the temperature of the temperature medium supplied from the chiller 41 to the first temperature-controlled trap 39 based on the measured temperature of the first temperature-controlled trap 39 and a predetermined internal temperature of the first pressure vessel 18, so as to eliminate the difference between the actual internal temperature of the first pressure vessel 18 and the predetermined internal temperature of the first pressure vessel 18. Further, the control unit 17 controls the temperature of the temperature medium supplied from the chiller 41 to the second temperature-controlled trap 40 based on the measured temperature of the second temperature-controlled trap 40 and a predetermined internal temperature of the second pressure vessel 19, so as to eliminate the difference between the actual internal temperature of the second pressure vessel 19 and the predetermined internal temperature of the second pressure vessel 19.

[0023] In the processing apparatus 10, when cleaning is performed on the components inside the processing chamber 11, the second pressure control valve 21 is opened as a general rule, and the pressure inside the first pressure vessel 18 and the second pressure vessel 19 are maintained at the same pressure.

[0024] Furthermore, when cleaning is performed on the components inside the processing chamber 11, the control unit 17 controls the opening degree of the first pressure control valve 20 based on the actual pressure inside the first pressure vessel 18 measured by the first pressure gauge 23 and the target pressure inside the first pressure vessel 18 calculated from the actual temperature inside the first pressure vessel 18 measured by the first thermometer 24. Specifically, the control unit 17 controls the opening degree of the first pressure control valve 20 so as to eliminate the difference between the actual pressure inside the first pressure vessel 18 and the target pressure inside the first pressure vessel 18. As mentioned above, since the pressure inside the first pressure vessel 18 and the second pressure vessel 19 are maintained at the same pressure, the control unit 17 may control the opening degree of the first pressure control valve 20 based on the actual pressure inside the second pressure vessel 19 measured by the second pressure gauge 25 and the target pressure inside the second pressure vessel 19 calculated from the actual temperature inside the second pressure vessel 19 measured by the second thermometer 26.

[0025] Furthermore, the processing apparatus 10 uses an inert gas, such as argon (Ar) gas or nitrogen (N) gas. ２ The system includes an inert gas supply source 42 that supplies gas, a first purge pipe 43 that connects the inert gas supply source 42 and the first pressure vessel 18, and a second purge pipe 44 that connects the inert gas supply source 42 and the second pressure vessel 19 via a part of the exhaust line 14.

[0026] After the cleaning process is completed in the processing apparatus 10, the inert gas supply source 42 supplies inert gas to the inside of the first pressure vessel 18 and the second pressure vessel 19 via the first purging pipe 43 and the second purging pipe 44. As a result, any gas remaining inside the first pressure vessel 18 and the second pressure vessel 19 is purged from the inside of the first pressure vessel 18 and the second pressure vessel 19 by the inert gas.

[0027] In the processing device 10, the first gas condensation unit 15, the second gas condensation unit 16, the condensate recovery container 27, the recovery piping 28, the on / off valve 29, the heater 30, the reuse piping 32, the MFC 37, and the on / off valve 38 constitute the gas recovery system.

[0028] Next, the gas recovery method of the processing apparatus according to this embodiment will be described. In the processing apparatus 10, when the copper metal film formed on the surface of the member inside the processing chamber is washed and removed with Hfac gas, the reaction product Cu(Hfac) ２ This process occurs, and some Hfac gas remains as unreacted Hfac gas. The exhaust gas then contains unreacted Hfac gas and Cu(Hfac) ２ Although it contains gas, the gas recovery method of the processing device according to this embodiment recovers the unreacted Hfac gas and Cu(Hfac) contained in this exhaust gas. ２ The gas is separated and recovered. Specifically, the saturated vapor pressure of Hfac and Cu(Hfac) ２ By utilizing the difference with the saturated vapor pressure, Cu(Hfac) is condensed by the first gas condensation unit 15. ２ The gas is recovered, and Hfac gas is recovered by the second gas condensation unit 16.

[0029] Figure 2 shows Hfac and Cu(Hfac) ２ This is a graph showing the saturated vapor pressure curve of Cu(Hfac). As shown in Figure 2, the saturated vapor pressure curve of Hfac (shown as a dashed line in the figure) is Cu(Hfac) ２ Because it exceeds the saturated vapor pressure curve (shown as a solid line in the figure), Cu(Hfac) ２ The gas is more easily condensed or solidified than Hfac gas. At the same temperature, Cu(Hfac) ２ The gas condenses or solidifies at a lower pressure than Hfac gas, and at the same pressure, Cu(Hfac) ２ The gas condenses or solidifies at a higher temperature than Hfac gas. For example, at a pressure of 30 Torr, within the temperature range of 0°C or higher shown as "Temperature Range 1" in Figure 2, Cu(Hfac) ２ Only the gas condenses or solidifies, while Hfac gas neither condenses nor solidifies. Also, in the temperature range below 0°C shown as "Temperature Range 2" in Figure 2, Cu(Hfac)２ Not only the gas but also the Hfac gas condenses or solidifies.

[0030] Here, as described above, in the processing apparatus 10, when the internal components of the processing chamber are subjected to cleaning, the pressure inside the first pressure vessel 18 and the second pressure vessel 19 are maintained at the same pressure. Therefore, in the gas recovery method of the processing apparatus according to this embodiment, the temperature inside the first pressure vessel 18 is made higher than the temperature inside the second pressure vessel 19, and Cu(Hfac) is recovered in the first gas condensation section 15. ２ By condensing or solidifying the gas, Cu(Hfac) can be extracted from the exhaust gas. ２ The gas is recovered (removed). Then, the exhaust gas is introduced into the second pressure vessel 19 of the second gas condensation unit 16, and the Hfac gas is condensed or solidified in the second gas condensation unit 16. As a result, the metal complex Cu(Hfac) is formed in the condensate of Hfac that has condensed or solidified in the second gas condensation unit 16. ２ To prevent it from being included.

[0031] In the gas recovery method of the processing apparatus according to this embodiment, first, the pressure inside the first pressure vessel 18 and the target pressure inside the second pressure vessel 19 are set to, for example, 30 Torr. Then, the control unit 17 controls the opening degree of the first pressure control valve 20 so that the difference between the actual pressure inside the first pressure vessel 18 and the target pressure inside the first pressure vessel 18 is eliminated.

[0032] Here, as mentioned above, if the pressure is 30 Torr, then in the temperature range above 0°C, Cu(Hfac) ２ Only Cu(Hfac) condenses or solidifies. ２ The internal temperature of the first pressure vessel 18 of the first gas condensation unit 15, which recovers the gas, is set to 0°C or higher, for example, 0°C, and the internal temperature of the second pressure vessel 19 of the second gas condensation unit 16, which recovers the Hfac gas, is set to less than 0°C, for example, -50°C.

[0033] Then, the temperature of the heat medium supplied from the chiller 41 to the first temperature control trap 39 is controlled to eliminate the difference between the actual temperature inside the first pressure vessel 18 and the set temperature inside the first pressure vessel 18 (0°C). Similarly, the temperature of the heat medium supplied from the chiller 41 to the second temperature control trap 40 is controlled to eliminate the difference between the actual temperature inside the second pressure vessel 19 and the set temperature inside the second pressure vessel 19 (-50°C). At this time, the first temperature control trap 39 contains Cu(Hfac) ２ Condensates (first condensates) adhere to the first condensate, and condensates of Hfac (second condensates) adhere to the second temperature control trap 40.

[0034] After cleaning the internal components of the processing chamber, the first pressure control valve 20 and the second pressure control valve 21 are closed, and the temperature of the second temperature control trap 40 is raised by the heat medium supplied from the chiller 41 to the temperature at which Hfac undergoes a phase change to a liquid state, and the on / off valve 29 is opened. At this time, the condensed Hfac adhering to the second temperature control trap 40 is converted into liquid Hfac. The liquid Hfac then drips from the second temperature control trap 40, travels along the recovery pipe 28, and flows into the condensate recovery container 27, where the condensate recovery container 27 stores the liquid Hfac.

[0035] Subsequently, when cleaning the internal components of the processing chamber again, the on / off valve 29 is closed and the heater 30 heats the stored liquid Hfac. At this time, the Hfac undergoes a phase change to a gaseous state, and Hfac gas is produced as a recycled gas. This recycled Hfac gas is then supplied to the cleaning gas supply unit 12 via the recycled piping 32 and supplied to the inside of the processing chamber 11 via the MFC 37 and the on / off valve 38.

[0036] Furthermore, in the first gas condensation section 15, after cleaning the components inside the processing chamber, the second pressure control valve 21 and the third pressure control valve 22 are closed, the first pressure vessel 18 is opened, and the first temperature control trap 39 is removed. Then, Cu(Hfac) adhering to the removed first temperature control trap 39 is removed. ２ By removing the condensates, Cu(Hfac) ２The first temperature control trap 39 is cleaned as it is recovered. The cleaned first temperature control trap 39 is then placed back inside the first pressure vessel 18.

[0037] According to this embodiment, the saturated vapor pressure of Hfac and Cu(Hfac) ２ Using the difference from the saturated vapor pressure, Cu(Hfac) is used in the first temperature control trap 39 of the first gas condensation section 15. ２ The condensate is attached to the second temperature control trap 40 of the second gas condensation section 16, thereby causing the Hfac condensate to adhere to the unreacted Hfac gas contained in the exhaust gas and Cu(Hfac) ２ The gas can be separated and recovered.

[0038] Furthermore, according to this embodiment, the Hfac condensate adhering to the second temperature control trap 40 is converted to liquid Hfac, which is then stored in the condensate recovery container 27 before undergoing a phase change to a gaseous state to become Hfac gas for reuse, and supplied to the inside of the treatment chamber 11. As a result, unreacted Hfac gas can be reused for cleaning the components inside the treatment chamber, reducing the amount of wasted Hfac gas and lowering the load on the abatement device. Consequently, even if unreacted Hfac gas is generated, the cost required for cleaning the components inside the treatment chamber can be reduced.

[0039] As described above, the processing apparatus 10 can control the pressure inside the first pressure vessel 18 of the first gas condensation section 15 and the pressure inside the second pressure vessel 19 of the second gas condensation section 16 by controlling the opening degree of the first pressure control valve 20. Therefore, in the gas recovery method of the processing apparatus according to this embodiment, by controlling the pressure inside the first pressure vessel 18 and the pressure inside the second pressure vessel 19, Cu(Hfac) ２ This can also facilitate the recovery of Hfac.

[0040] For example, as shown in Figure 3A, if the internal pressure of the first pressure vessel 18 and the internal pressure of the second pressure vessel 19 are set to 3 Torr, the internal temperature of the first pressure vessel 18 must be lowered to 77°C or below to prevent Cu(Hfac) ２The gas does not condense or solidify, and the Hfac gas will not condense or solidify unless the temperature inside the second pressure vessel 19 is lowered to below -38°C.

[0041] On the other hand, as shown in Figure 3B, when the internal pressure of the first pressure vessel 18 and the internal pressure of the second pressure vessel 19 are set to 30 Torr, simply lowering the internal temperature of the first pressure vessel 18 to 120°C or below will reduce Cu(Hfac) ２ The gas condenses or solidifies, and the Hfac gas condenses or solidifies simply by lowering the temperature inside the second pressure vessel 19 to below 0°C.

[0042] In other words, by simply increasing the pressure inside the first pressure vessel 18 and the pressure inside the second pressure vessel 19, without significantly lowering the temperature inside the first pressure vessel 18 and the temperature inside the second pressure vessel 19, Cu(Hfac) ２ Cu(Hfac) gas can be condensed or solidified. As a result, Cu(Hfac) can be condensed or solidified without significantly lowering the temperature inside the first pressure vessel 18 or the second pressure vessel 19 by the first temperature control trap 39 or the second temperature control trap 40. ２ It can also recover Hfac.

[0043] Furthermore, if the first temperature control trap 39 and the second temperature control trap 40 eliminate the need to significantly lower the internal temperature of the first pressure vessel 18 and the internal temperature of the second pressure vessel 19, then the temperature of the heat medium supplied from the chiller 41 also does not need to be significantly lowered. As a result, the energy required for temperature control of the heat medium in the chiller 41 can be reduced. Consequently, the running costs of the processing device 10 can be reduced.

[0044] Furthermore, if the internal pressure of the first pressure vessel 18 and the internal pressure of the second pressure vessel 19 are increased, and the internal temperature of the first pressure vessel 18 and the internal temperature of the second pressure vessel 19 is further decreased, Cu(Hfac) ２ Because it can promote the condensation or solidification of gases such as Cu(Hfac), ２ This can improve the recovery efficiency of Hfac.

[0045] While preferred embodiments of this disclosure have been described above, this disclosure is not limited to the embodiments described above, and various modifications and changes are possible within the scope of its essence.

[0046] For example, in the processing apparatus 10, when cleaning is performed on the components inside the processing chamber, the second pressure control valve 21 is generally opened. However, the opening degree of the second pressure control valve 21 may be controlled to create a pressure difference between the inside of the first pressure vessel 18 and the inside of the second pressure vessel 19.

[0047] In this case, the target pressure inside the first pressure vessel 18 is set based on the actual temperature inside the first pressure vessel 18. Specifically, the target pressure inside the first pressure vessel 18 is set at the actual temperature inside the first pressure vessel 18, where Cu(Hfac) ２ The target pressure inside the first pressure vessel 18 is set to a pressure equal to or greater than the pressure at which the gas condenses or solidifies (first phase change pressure), and less than the pressure at which the Hfac gas condenses or solidifies (second phase change pressure) at the actual temperature inside the first pressure vessel 18. For example, if the actual temperature inside the first pressure vessel 18 is 60°C, the target pressure inside the first pressure vessel 18 will be the pressure indicated as "Target Pressure 1" in Figure 2. Furthermore, the target pressure inside the second pressure vessel 19 is set based on the actual temperature inside the second pressure vessel 19. Specifically, the target pressure inside the second pressure vessel 19 is set to a pressure equal to or greater than the pressure at which the Hfac gas condenses or solidifies (third phase change pressure) at the actual temperature inside the second pressure vessel 19. For example, if the actual temperature inside the second pressure vessel 19 is -40°C, the target pressure inside the second pressure vessel 19 will be the pressure indicated as "Target Pressure 2" in Figure 2. In the processing apparatus 10, since the first gas condenser 15 is connected to the dry pump 13 via the second gas condenser 16, the pressure inside the first pressure vessel 18 must be higher than the pressure inside the second pressure vessel 19, and therefore the target pressure 1 must be set to a pressure higher than the target pressure 2.

[0048] At this time, the control unit 17 controls the opening degree of the first pressure control valve 20 and the opening degree of the second pressure control valve 21 so that the difference between the actual pressure inside the first pressure vessel 18 and the target pressure 1 is eliminated. The control unit 17 also controls the opening degree of the first pressure control valve 20 so that the difference between the actual pressure inside the second pressure vessel 19 and the target pressure 2 is eliminated.

[0049] Furthermore, in the processing apparatus 10, the first gas condenser 15 is located on the processing chamber 11 side, and the second gas condenser 16 is located on the dry pump 13 side. However, the arrangement order of the first gas condenser 15 and the second gas condenser 16 may be reversed.

[0050] Figure 4 is a schematic diagram illustrating a modified example of the processing apparatus 10 of Figure 1. In Figure 4, the processing apparatus 45 has the same configuration as the processing apparatus 10, except for the arrangement order of the first gas condenser 15 and the second gas condenser 16, with the first gas condenser 15 located on the dry pump 13 side and the second gas condenser 16 located on the processing chamber 11 side.

[0051] In the processing apparatus 45, when the components inside the processing chamber are subjected to cleaning treatment, the target pressure inside the second pressure vessel 19 is set to a pressure equal to or greater than the pressure at which Hfac gas condenses or solidifies at the actual temperature inside the second pressure vessel 19. Meanwhile, in the processing apparatus 45, the exhaust gas flowing into the second pressure vessel 19 contains unreacted Hfac gas and Cu(Hfac) ２ It contains the gas, and as mentioned above, at the same temperature Cu(Hfac) ２ The gas condenses or solidifies at a lower pressure than the Hfac gas. Therefore, the second temperature-controlled trap 40 of the second gas condensation section 16 contains not only Hfac condensates but also Cu(Hfac) ２ Condensed matter also adheres to it.

[0052] After cleaning the components inside the processing chamber, the third pressure control valve 22 and the second pressure control valve 21 are closed, and the temperature of the second temperature control trap 40 is set to the temperature at which Hfac undergoes a phase change to a liquid state, and Cu(Hfac) ２ The temperature is raised to a point where the substance does not undergo a phase change to a liquid state, and the on / off valve 29 is opened. Note that the temperature at which Hfac undergoes a phase change to a liquid state is such that Cu(Hfac)２ The temperature at which the substance does not undergo a phase change to a liquid state is, for example, slightly higher than -38°C (see Figure 3A) when the actual pressure inside the second pressure vessel 19 is 3 Torr, and slightly higher than 0°C (see Figure 3B) when the actual pressure inside the second pressure vessel 19 is 30 Torr.

[0053] At this time, the condensed Hfac attached to the second temperature control trap 40 is converted to liquid Hfac, but Cu(Hfac) ２ The condensate remains attached to the second temperature control trap 40 without undergoing a phase change to a liquid state. Consequently, liquid Hfac is stored in the condensate recovery container 27, and as a result, unreacted Hfac gas can be recovered from the exhaust gas and reused as a gas for cleaning the internal components of the treatment chamber.

[0054] Furthermore, in the processing apparatus 45, not only Hfac condensates but also Cu(Hfac) are collected in the second temperature control trap 40. ２ Since condensates also adhere to the container, the condensate collection container 27 contains not only liquid Hfac but also a small amount of liquid Cu(Hfac). ２ There is a risk that it will also be stored, and as a result, the reused gas will contain some Cu(Hfac) ２ There is a risk of the gases being mixed. Therefore, a filter (not shown) is placed in the reuse piping 32 to separate the reuse gas from Cu(Hfac). ２ It is preferable to remove the gas. Alternatively, the heater 30 can be used to change the temperature of the contents of the condensate recovery container 27. Hfac undergoes a phase change to a gaseous state, but Cu(Hfac) ２ By heating it to a temperature where it does not undergo a phase change to a gaseous state, Cu(Hfac) is converted into a reusable gas. ２ It may be possible to prevent the inclusion of gas.

[0055] Furthermore, in the processing apparatus 45, the temperature of the first temperature-controlled trap 39 is set lower than the temperature of the second temperature-controlled trap 40, and Hfac gas and Cu(Hfac) that could not be recovered in the second gas condensation section 16 are removed. ２ It is preferable to recover the gas.

[0056] In the processing apparatus 10 and processing apparatus 45 described above, two gas condensation units are provided, but three or more gas condensation units may be provided, in which case Hfac gas may be condensed or solidified in two or more gas condensation units. When Hfac gas is condensed or solidified in two or more gas condensation units, a condensate recovery container 27 is connected to the pressure vessel of all gas condensation units that condense or solidify Hfac gas.

[0057] Furthermore, in the processing apparatus 10 and 45, the cleaning process removes not only the copper metal film formed on the surface of the components inside the processing chamber, but also copper compounds that have adhered to the surface of the components inside the processing chamber.

[0058] This application claims priority based on Japanese Patent Application No. 2025-051672, filed on 26 March 2025, and all of its contents are incorporated herein by reference.

[0059] 10 Processing unit 11 Processing chamber 12 Cleaning gas supply unit 13 Dry pump 14 Exhaust line 15 First gas condenser 16 Second gas condenser 17 Control unit 18 First pressure vessel 19 Second pressure vessel 20 First pressure control valve 23 First pressure gauge 24 First thermometer

Claims

1. A gas recovery system for a processing apparatus having a processing chamber and a cleaning gas supply unit that supplies cleaning gas to perform cleaning treatment on components inside the processing chamber, comprising: a gas exhaust unit that exhausts gas from inside the processing chamber; an exhaust line connecting the processing chamber and the gas exhaust unit; a plurality of gas condensers arranged in the exhaust line between the processing chamber and the gas exhaust unit; and a control unit, wherein the cleaning gas supply unit supplies the cleaning gas to the inside of the processing chamber; each of the plurality of gas condensers has a pressure vessel, and inside the pressure vessel, the gas exhausted from the processing chamber is condensed or solidified to convert it into a condensate; a first pressure control valve is arranged in the exhaust line between the plurality of gas condensers and the gas exhaust unit to create a pressure difference between the inside of the pressure vessel and the gas exhaust unit; each of the plurality of gas condensers is equipped with a pressure gauge for measuring the actual pressure inside one of the plurality of pressure vessels and a thermometer for measuring the actual temperature inside one of the plurality of pressure vessels. The control unit controls the opening of the first pressure control valve to adjust the pressure inside the pressure vessel based on the measured actual pressure and the target pressure inside the pressure vessel calculated from the measured actual temperature, thereby adjusting the pressure inside the pressure vessel. This is a gas recovery system for a processing device.

2. The gas recovery system of the processing apparatus according to claim 1, wherein the plurality of gas condensation units are arranged in series in the exhaust line.

3. The gas recovery system of the processing apparatus according to claim 2, wherein the inside of the pressure vessels of the plurality of gas condensation units is maintained at the same pressure.

4. The gas recovery system of the processing apparatus according to claim 1, wherein the pressure gauge and the thermometer measure the pressure and temperature inside the pressure vessel of the same gas condensation section.

5. The plurality of gas condensers are composed of a first gas condenser located on the processing chamber side and a second gas condenser located on the gas exhaust side, the first gas condenser having a first pressure vessel, which condenses or solidifies the gas exhausted from the processing chamber inside the first pressure vessel to convert it into a first condensate, the second gas condenser having a second pressure vessel, which condenses or solidifies the gas exhausted from the processing chamber inside the second pressure vessel to convert it into a second condensate, a second pressure control valve is located in the exhaust line between the first gas condenser and the second gas condenser to create a pressure difference between the inside of the first pressure vessel and the inside of the second pressure vessel, the first gas condenser is equipped with a first pressure gauge for measuring the actual pressure inside the first pressure vessel and a first thermometer for measuring the actual temperature inside the first pressure vessel, The gas recovery system for a processing apparatus according to claim 2, wherein the second gas condensation unit is equipped with a second pressure gauge for measuring the actual pressure inside the second pressure vessel and a second thermometer for measuring the actual temperature inside the second pressure vessel, and the control unit controls the opening of the first pressure control valve and the opening of the second pressure control valve to adjust the pressure inside the first pressure vessel and the pressure inside the second pressure vessel based on the measured actual pressure inside the first pressure vessel, the measured actual temperature inside the first pressure vessel, the measured actual pressure inside the second pressure vessel, and the measured actual temperature inside the second pressure vessel, thereby adjusting the pressure inside the first pressure vessel and the pressure inside the second pressure vessel.

6. The gas recovery system for a processing apparatus according to claim 1, wherein each of the plurality of gas condensing sections has a pressure vessel containing a temperature-controlled trap for depositing condensate converted from the gas exhausted from the processing chamber, and the gas recovery system for the processing apparatus further comprises a temperature control mechanism for supplying a heat medium to each of the temperature-controlled traps, and a temperature-controlled trap thermometer for measuring the temperature of each of the temperature-controlled traps.

7. A gas recovery system for a processing apparatus according to claim 1, further comprising: a condensate recovery container; a recovery pipe connecting at least one of a plurality of pressure vessels to the condensate recovery container; and an on / off valve for controlling communication between the pressure vessel to which the recovery pipe is connected and the condensate recovery container, wherein the condensate recovery container stores condensate converted from gas exhausted from the processing chamber in the pressure vessel to which the recovery pipe is connected.

8. The gas recovery system of the processing apparatus according to claim 7, further comprising a heating mechanism for heating the condensate recovery container and a condensate thermometer for measuring the temperature of the stored condensate.

9. The gas recovery system for a processing apparatus according to claim 8, further comprising a reuse piping connecting the condensate recovery container and the cleaning gas supply unit, wherein the gas generated by heating the stored condensate by the heating mechanism is supplied from the condensate recovery container to the inside of the processing chamber via the reuse piping.

10. The gas recovery system for the processing apparatus according to claim 9, further comprising a flow rate adjustment mechanism arranged in the reuse piping and for controlling the flow rate of the gas supplied from the condensate recovery container to the inside of the processing chamber.

11. The gas recovery system of the processing apparatus according to claim 1, wherein the washing gas is hexafluoroacetylacetone.

12. The gas recovery system for a processing apparatus according to claim 11, wherein in the washing process, a copper metal film formed on the surface of the internal components of the processing chamber is removed, and the gas of the copper metal complex, which is a reaction product generated in the washing process, and the gas of unreacted hexafluoroacetylacetone are each condensed or solidified in different gas condensation units to be converted into condensates.

13. A gas recovery method for a processing apparatus having a processing chamber, a cleaning gas supply unit that supplies cleaning gas to perform cleaning treatment on components inside the processing chamber, and a gas exhaust unit that exhausts gas from inside the processing chamber, wherein the processing apparatus comprises an exhaust line connecting the processing chamber and the gas exhaust unit, and a plurality of gas condensers arranged in the exhaust line between the processing chamber and the gas exhaust unit, each of the plurality of gas condensers having a pressure vessel, which condenses or solidifies the gas exhausted from the processing chamber inside the pressure vessel to convert it into a condensate, and the method for a gas recovery method for a processing apparatus having the steps of: measuring the actual pressure inside one of the plurality of pressure vessels; measuring the actual temperature inside one of the plurality of pressure vessels; and adjusting the pressure inside the pressure vessel by controlling the opening of a first pressure control valve arranged between the plurality of gas condensers and the gas exhaust unit based on the measured actual pressure and a target pressure inside the pressure vessel calculated from the measured actual temperature.

14. The plurality of gas condensers are composed of a first gas condenser located on the processing chamber side and a second gas condenser located on the gas exhaust side, the first gas condenser having a first pressure vessel, which condenses or solidifies the gas exhausted from the processing chamber inside the first pressure vessel to convert it into a first condensate, the second gas condenser having a second pressure vessel, which condenses or solidifies the gas exhausted from the processing chamber inside the second pressure vessel to convert it into a second condensate, the process of measuring the actual pressure inside the first pressure vessel, the process of measuring the actual temperature inside the first pressure vessel, the process of measuring the actual pressure inside the second pressure vessel, A gas recovery method for a processing apparatus according to claim 13, comprising controlling the opening degree of the first pressure control valve and the opening degree of the second pressure control valve disposed between the first gas condensation unit and the second gas condensation unit, based on the measured actual pressure inside the first pressure vessel, the measured actual temperature inside the first pressure vessel, the measured target pressure inside the first pressure vessel, the measured actual pressure inside the second pressure vessel, and the measured target pressure inside the second pressure vessel, thereby adjusting the pressure inside the first pressure vessel and the pressure inside the second pressure vessel.

15. The gas recovery method for the processing apparatus according to claim 14, wherein the target pressure inside the first pressure vessel is greater than or equal to a first phase change pressure at which the reaction product gas generated in the cleaning process condenses or solidifies at the measured actual temperature inside the first pressure vessel, and less than a second phase change pressure at which the cleaning gas condenses or solidifies at the measured actual temperature inside the first pressure vessel.

16. The gas recovery method for the processing apparatus according to claim 15, wherein the target pressure inside the second pressure vessel is equal to or greater than the third phase change pressure at which the cleaning gas condenses or solidifies at the measured actual temperature inside the second pressure vessel.

17. A gas recovery method for a processing apparatus according to claim 13, wherein each pressure vessel of the plurality of gas condensation units contains a temperature-controlled trap for depositing condensate converted from the gas exhausted from the processing chamber, the processing apparatus further comprises a temperature control mechanism for supplying a heat medium to each of the temperature-controlled traps, and further comprises the steps of: measuring the temperature of each of the temperature-controlled traps; and controlling the temperature of the heat medium by the temperature control mechanism based on the measured temperature of each temperature-controlled trap and a predetermined internal temperature of each of the pressure vessels.

18. The gas recovery method for the apparatus according to claim 13, wherein the washing gas is hexafluoroacetylacetone.

19. The gas recovery method for the apparatus according to claim 18, wherein in the washing process, a copper metal film formed on the surface of the internal member of the processing chamber is removed, and the gas of the copper metal complex, which is a reaction product generated in the washing process, and the gas of unreacted hexafluoroacetylacetone are each cooled in different gas condensation units and converted into condensates.

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