Ion trap package, ion trap package array, and device
Patent Information
- Application Number
- PCT/JP2026/010807
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-03-28
- Filing Date
- 2026-03-18
- Publication Date
- 2026-10-01
Smart Images

Figure JP2026010807_01102026_PF_FP_ABST
Abstract
Description
Ion Trap Package, Ion Trap Package Array and Apparatus
[0001] The present disclosure relates to an ion trap package, an ion trap package array and an apparatus.
[0002] There is a demand for high-performance information processing apparatuses used in global environment simulators, weather forecasting, pharmaceutical dispensing, creation of new substances, security and encryption enhancement, and the like. As such an information processing apparatus, development of an apparatus using the so-called ion trap technology, which three-dimensionally confines ions and transmits photons from the confined ions (hereinafter simply referred to as "light"), is ongoing (see Patent Document 1).
[0003] Japanese Patent No. 7134220
[0004] The ion trap package of the present disclosure is an ion trap package on which an ion trap section for confining ions is mounted, and includes a carrier substrate and a housing. The carrier substrate has a first surface and a second surface positioned opposite to the first surface, and has a mounting region for the ion trap section on the first surface. The housing is concave, is positioned on the first surface and covers the mounting region, and has a ceiling section and a side wall section extending from the ceiling section toward the first surface. The side wall section has a plurality of first openings through which a plurality of first optical waveguides are respectively inserted from the outside of the side wall section toward the mounting region inside the housing.
[0005] FIG. 1 is a schematic perspective view showing an ion trap package according to a first embodiment. FIG. 2 is a schematic cross-sectional perspective view showing the ion trap package according to the first embodiment. FIG. 3 is a schematic side cross-sectional view showing the ion trap package according to the first embodiment. FIG. 4 is a schematic cross-sectional perspective view showing a flange according to the first embodiment. FIG. 5 is a schematic side cross-sectional view showing the flange according to the first embodiment. FIG. 6 is a schematic side cross-sectional view showing a flange according to a comparative example. FIG. 7 is a schematic plan view showing an ion trap package array according to the first embodiment. FIG. 8 is a schematic view showing an apparatus including the ion trap package array according to the first embodiment. FIG. 9 is a schematic side cross-sectional view showing an ion trap package according to a second embodiment.
[0006] The embodiments for implementing the ion trap package, ion trap package array, and apparatus according to this disclosure (hereinafter referred to as "embodiments") will be described in detail below with reference to the drawings. However, this disclosure is not limited by these embodiments. Furthermore, each embodiment can be combined as appropriate, provided that the processing content is not inconsistent. Also, the same parts are denoted by the same reference numerals in each of the following embodiments, and redundant descriptions are omitted.
[0007] Furthermore, in the embodiments described below, expressions such as "orthogonal" or "parallel" may be used, but these expressions do not require strict "orthogonal" or "parallel" alignment. In other words, each of the above expressions allows for deviations such as manufacturing accuracy and installation accuracy.
[0008] Furthermore, in the drawings referenced below, for the sake of clarity, mutually orthogonal X-axis, Y-axis, and Z-axis directions are sometimes defined, and a Cartesian coordinate system is shown with the positive Z-axis direction as the vertically upward direction.
[0009] Patent Document 1 discloses an ion trap package that has a window on the side and a chamber with a vacuum inside, in which laser light irradiated from a light source located outside the chamber passes through the side window and enters the inside of the chamber.
[0010] However, in the ion trap package disclosed in Patent Document 1, since laser light is irradiated from a light source located outside the chamber, light tends to diverge near the ion trap located inside the chamber. In other words, there is a large loss of light. Because of the large loss of light, there is room for improvement in terms of the light transmission efficiency in the ion trap of the ion trap package disclosed in Patent Document 1.
[0011] Therefore, technologies that can improve the light transmission efficiency in ion traps are highly anticipated.
[0012] (First Embodiment) The configuration of the ion trap package 10 according to the first embodiment will be described with reference to Figures 1 to 5. Figure 1 is a schematic perspective view showing the ion trap package 10 according to the first embodiment. Figure 2 is a schematic cross-sectional perspective view showing the ion trap package 10 according to the first embodiment.
[0013] As shown in Figures 1 and 2, the ion trap package 10 comprises a carrier substrate 20 and a housing 30. The housing 30 has a first opening 321 (see Figure 3) located in the side wall portion 32. The housing 30 may also have a second opening 311 located in the ceiling portion 31. The ceiling portion 31 of the housing 30 may have a transparent member 312 located in the second opening 311. In Figures 1 and 2, the housing 30 is circular in plan view, but it may also be a polygon such as a square, pentagon, or hexagon in plan view.
[0014] This ion trap package 10 is equipped with an ion trap section 50 for confining ions P floating inside the ion trap package.
[0015] The configuration of the ion trap package 10 will now be described in detail. Figure 3 is a schematic side cross-sectional view showing the ion trap package 10 according to the first embodiment. Figure 3 is a schematic view of Figure 2 in the positive Y-axis direction. As described above, the ion trap package 10 comprises a carrier substrate 20 and a housing 30. As shown in Figure 3, the carrier substrate 20 has a first surface 21 and a second surface 22.
[0016] The carrier substrate 20 has a mounting area A for the ion trap unit 50. Mounting area A is the area occupied by the ion trap unit 50. Mounting area A is located on the first surface 21.
[0017] The carrier substrate 20 is preferably a wiring substrate. The carrier substrate 20 may be, for example, a multilayer wiring substrate (hereinafter referred to as "multilayer wiring substrate") in which multiple ceramic substrates are layered and wiring is arranged between the layers. The multilayer wiring substrate is a composite of an insulator and a conductor. The insulator material is preferably one of the following: ceramic, organic resin, silica (glass), a composite of ceramic and organic resin, or a composite of glass and organic resin.
[0018] The carrier substrate 20 may be a composite of a ceramic substrate and a metallized conductor. The material of the metallized conductor may be any of the nonmagnetic materials described later, such as tungsten, molybdenum, copper, or composite materials thereof.
[0019] Furthermore, a multilayer wiring board is a laminate of insulating layers and conductive wiring. In the example shown in Figure 3, the multilayer wiring board as the carrier substrate 20 is a laminated type wiring board in which insulating layers 23 and conductive wiring 24 are alternately laminated. The multilayer wiring board as the carrier substrate 20 preferably has through conductors 25 that penetrate the insulating layer 23 in the thickness direction.
[0020] Furthermore, the carrier substrate 20 has a through hole (hereinafter referred to as the "first through hole") 26 that penetrates from the first surface 21 to the second surface 22. The first through hole 26 is preferably located outside the mounting area A of the ion trap unit 50. The first through hole 26 is a hole for reducing the internal space of the ion trap package 10, which is formed by covering the first surface 21 of the carrier substrate 20 with the housing 30. By degassing through the first through hole 26, the internal space of the ion trap package 10 becomes a vacuum.
[0021] The carrier substrate 20 may have multiple first through-holes 26. In addition, an adsorption member (not shown) that adsorbs hydrogen, nitrogen, etc., in order to maintain the vacuum state of the internal space of the ion trap package 10 may be located therein.
[0022] A pipe member 27 may be positioned on the second surface 22 of the carrier substrate 20. The pipe member 27 is positioned on the second surface 22 such that its internal space connects to the space of the first through-hole 26. The material of the pipe member 27 is preferably copper. The pipe member 27 is connected to a vacuum device such as a vacuum pump, which will be described later, when the internal space of the ion trap package 10 is to be depressurized. The pipe member 27 closes the first through-hole 26 when it is crushed. This maintains a vacuum state in the internal space of the ion trap package 10.
[0023] The housing 30 is located on the first surface 21 of the carrier substrate 20. The housing 30 is concave. The housing 30 has a cap-like external shape, a so-called cap type. When the housing 30 is placed over the carrier substrate 20, it forms a so-called chamber with a cavity. The housing 30 is a rigid structure. The housing 30 is configured to withstand a vacuum level of at least 10 to 8 Pa or less.
[0024] Furthermore, the material of the housing 30 is a non-magnetic material. Here, a non-magnetic material is defined as a material with a magnetic permeability (relative permeability) of 1.1 μ / μ0 or less. As shown in Table 1 below, examples of non-magnetic materials include copper, titanium, stainless steel (SUSXM7), and stainless steel (SUS304). Iron, listed as a comparative example, has a magnetic permeability of 5000 μ / μ0. The symbols for stainless steel are material symbols based on JIS standards.
[0025]
[0026] The housing 30 covers the mounting area A of the ion trap unit 50 when positioned on the first surface 21 of the carrier substrate 20. That is, the housing 30 covers the ion trap unit 50. The housing 30 has a ceiling portion 31 and side wall portions 32. The ceiling portion 31 is located at the top of the housing 30 and forms the upper surface of the housing 30. The side wall portions 32 are located on the sides of the housing 30 and form the side surfaces of the housing 30.
[0027] The side wall portion 32 has a plurality of first openings 321. The side wall portion 32 has at least two first openings 321. The first openings 321 penetrate the side wall portion 32 in the thickness direction. The first optical waveguide 41 passes through the first openings 321 from outside the side wall portion 32 toward the mounting area A inside the side wall portion 32. That is, the side wall portion 32 has, for example, two first optical waveguides 41, two first openings 321. The first openings 321 may be circular in side view.
[0028] The ceiling portion 31 has a second opening 311 and a transparent member 312. The second opening 311 penetrates the ceiling portion 31 in the thickness direction. The second opening 311 is located above the mounting area A of the ion trap portion 50. The transparent member 312 is located at the second opening 311. The transparent member 312 may be made of glass. The transparent member 312 may be fixed to the second opening 311 by a fixing part (hereinafter referred to as the "third fixing part") 313. The transparent member 312 may be sealed by the third fixing part 313. The second opening 311 and the transparent member 312 are used to observe the state of ions generated in the ion trap portion 50. In this case, the state of the ions is optically detected by light passing through the transparent member 312 located at the second opening 311.
[0029] As shown in Figure 3, the ion trap package 10 may include a first optical waveguide 41 and an ion trap section 50. The first optical waveguide 41 may be an optical fiber. If the first optical waveguide 41 is an optical fiber that transmits visible light, barium may be used for the ions confined in the ion trap section 50. There are at least two first optical waveguides 41 for transmitting light for cooling and operation. The first optical waveguides 41 may also transmit light for purposes other than cooling and operation, in which case there may be five to six.
[0030] The ends 411 of the multiple optical waveguides 41 are located above the ion trap section 50. The ends 411 of the multiple optical waveguides 41 are in close proximity to each other above the ion trap section 50. The ends 411 of the multiple optical waveguides 41 may face each other above the ion trap section 50. One end 411 of the first optical waveguide 41 may be fixed to the upper surface of the ion trap section 50 by a fixing part (hereinafter referred to as the "first fixing part") 412.
[0031] Furthermore, if the first optical waveguide 41 has a main body portion 413 from one end 411 located inside the housing 30 to the side wall portion 32, the main body portion 413 may have some slack.
[0032] The ion trap section 50 captures ions P floating inside the housing 30 with a potential created by an electric field formed by a substrate 51 (described later) for electric field formation. In the ion trap section 50, the motion of ions P is reduced by irradiation with cooling light. This allows ions P to be confined in the ion trap section 50.
[0033] The ion trap section 50 may have two substrates (hereinafter referred to as "first substrate" and "second substrate") 51 and 52. The first substrate 51 is located on the first surface 21 of the carrier substrate 20. The first substrate 51 has RF (Radio Frequency) wiring (not shown) and DC (Direct Current) wiring (not shown). The second substrate 52 is located above the first substrate 51. The first optical waveguide 41 is located above the second substrate 52. The longitudinal direction of the first optical waveguide 41 is parallel to the surface of the second substrate 52.
[0034] The total length of the RF wiring on the first substrate 51 may be shorter than the wavelength of the current flowing through the RF wiring. Furthermore, the type of RF wiring may be coaxial, stripline, or microstrip. Also, the longitudinal direction of the first optical waveguide 41 may be parallel to the RF wiring.
[0035] The second substrate 52 may be a silicon photonics substrate. In a silicon photonics substrate, for example, a waveguide chip is mounted on a waveguide substrate. The waveguide chip is, for example, a silicon photonics chip including a photoelectric conversion circuit. The waveguide chip as a silicon photonics chip is an optoelectronic semiconductor device including a light-emitting element and a light-receiving element.
[0036] As shown in Figure 3, the ion trap package 10 may include a first sealing member 61, a flange 70, and a second sealing member 62. The first sealing member 61 may be made of the non-magnetic material described above. The first sealing member 61 may also be made of Ag-Cu brazing material. If the first sealing member 61 is made of Ag-Cu brazing material, it may be made of a metal with a low melting point that melts when the housing 30 is heated, for example, when the ion trap package 10 is evacuated.
[0037] As shown in Figure 3, the first sealing member 61 may be positioned between the first surface 21 of the carrier substrate 20 and the side wall portion 32 of the housing 30. The carrier substrate 20 and the housing 30 are joined by the first sealing member 61.
[0038] Figure 4 is a schematic cross-sectional perspective view showing a flange according to the first embodiment. As shown in Figures 3 and 4, the flange 70 may have a flange portion 71, a through hole (hereinafter referred to as the "second through hole") 72, and a fixing hole (hereinafter referred to as the "second fixing portion") 73. As shown in Figure 3, the flange portion 71 is located on the outer surface 322 of the side wall portion 32. The flange 70 is located at the first opening 321. The second through hole 72 is a hole that penetrates the flange 70 in the thickness direction. The first optical waveguide 41 is inserted through the second through hole 72. The flange 70 guides the first optical waveguide 41 into the interior of the housing 30 through the second through hole 72, while the flange portion 71 closes the first through hole 26.
[0039] FIG. 5 is a schematic side cross-sectional view showing the flange according to the first embodiment. As shown in FIGS. 3 and 5, the second seal member 62 is located between the flange portion 71 of the flange 70 and the outer surface 322 of the side wall portion 32. Here, FIG. 6 is a schematic side cross-sectional view showing a flange 75 according to a comparative example. As shown in FIG. 6, in the flange 75, the flange portion 71 of the flange 75 is located on the inner surface 323 of the side wall portion 32. Further, in the flange 75, the second seal member 62 is located between the flange portion 71 and the inner surface 323 of the side wall portion 32.
[0040] In the case of the flange 75 according to the comparative example, there are many protrusions inside the housing. In contrast, in the case of the flange 70 according to the first embodiment, there are fewer protrusions compared to the flange 75 according to the comparative example.
[0041] As shown in FIGS. 3 and 5, the second fixing portion 73 may be located on the flange portion 71 of the flange 70. A plurality of the second fixing portions 73 may be arranged at equal intervals along the peripheral edge of the flange portion 71. A fixing member 74 such as a screw is attached to the second fixing portion 73. The flange 70 is fixed to the side wall portion 32 by such a fixing member 74.
[0042] Further, the material of the housing 30 and the flange 70 may be stainless steel among the above-mentioned non-magnetic materials. In this case, the second seal member 62 may be copper among the above-mentioned non-magnetic materials.
[0043] Further, the ion trap package 10 may further include an ion source (not shown) that generates ions P and a decompression device (not shown). The ion source may be of a thermal oven type. The thermal oven operates to sublime material to produce an atomic plume containing an atomic flux. The atomic plume moves through a depressurized space from the thermal oven to the ion trap section 50. The atomic plume changes into ions P exhibiting functions above the ion trap section 50.
[0044] As a material for forming an atomic plume, one type selected from the group consisting of ytterbium, beryllium, magnesium, strontium and calcium is preferred.
[0045] The decompression device may be a carbon adsorption pump. The carbon adsorption pump removes inert molecules such as helium from the interior of the housing 30 forming the chamber during cryogenic operation.
[0046] In the ion trap package 10 according to the first embodiment, a side wall portion 32 has a plurality of first openings 321 into which a plurality of first optical waveguides 41 are respectively inserted from the outside of the side wall portion 32 toward a mounting region A inside the side wall portion 32. According to this configuration, one ends 411 of the first optical waveguides 41 that have passed through the first openings 321 can be brought close to each other. For this reason, the spacing between the plurality of first optical waveguides 41 is narrowed. Thereby, light divergence can be reduced. That is, light loss can be reduced. Light transmission efficiency can be improved by reducing light loss.
[0047] Furthermore, in the ion trap package 10 according to the first embodiment, the material of the housing 30 is a non-magnetic material. According to this configuration, generation of magnetic lines of force from locations other than the ion trap portion 50 can be reduced, so fluctuations in the electric field and / or magnetic field strength (electric flux density and / or magnetic flux density) of the ion trap portion 50 can be reduced. Thereby, a change in the state of the ions P confined in the ion trap portion 50 mounted on the ion trap package 10 can be mitigated. By mitigating the change in state of the ions confined in the ion trap portion 50, stabilization of the ions confined in the ion trap portion 50 can be achieved.
[0048] Furthermore, in the ion trap package 10 according to the first embodiment, the ends 411 of the multiple first optical waveguides 41 are located above the ion trap section 50 and are in close proximity to each other. With this configuration, the ends 411 of the first optical waveguides 41 that have passed through the first opening 321 are in close proximity above the ion trap section 50. As a result, the space between the multiple first optical waveguides 41 becomes narrower. This reduces the divergence of light, that is, it reduces light loss. By reducing light loss, the light transmission efficiency can be improved.
[0049] Furthermore, the ion trap package 10 according to the first embodiment has a configuration in which the carrier substrate 20 and the housing 30 are joined by a first sealing member 61 made of a non-magnetic material. In the ion trap section 50, ions P are normally trapped by a magnetic field and an electrostatic field (Penning trap) or an RF electric field and an electrostatic field (Pauline trap). At this time, if magnetic field lines approach the ion trap section 50 from a location other than the ion trap section 50, the strength of the electric field and / or magnetic field of the ion trap section 50 will fluctuate. When the strength of the electric field and / or magnetic field of the ion trap section 50 fluctuates, the state of the ions in the ion trap section 50 changes. However, with this configuration, since the carrier substrate 20 and the housing 30 are joined by a first sealing member 61 made of a non-magnetic material, the generation of magnetic field lines from locations other than the ion trap section 50 can be reduced. By reducing the generation of magnetic field lines from locations other than the ion trap section 50, fluctuations in the strength of the electric field and / or magnetic field of the ion trap section 50 can be reduced. This makes it possible to mitigate changes in the state of ions P trapped in the ion trap section 50. By mitigating changes in the state of ions P trapped in the ion trap section 50, the ions trapped in the ion trap section 50 can be stabilized.
[0050] Furthermore, in the ion trap package 10 according to the first embodiment, the second sealing member 62 is positioned between the flange portion 71 of the flange 70 and the outer surface 322 of the side wall portion 32. With this configuration, the second sealing member 62 makes the space between the flange portion 71 and the outer surface 322 airtight, allowing the flange 70 to be airtightly fixed to the first opening 321. This reduces the occurrence of displacement of the first optical waveguide 41 inserted through the second through hole 72 of the flange 70. As a result, the laser cooling environment inside the housing 30 can be stabilized. Also, since the flange portion 71 is positioned on the outer surface 322 of the side wall portion 32, it protrudes less compared to, for example, the case where the flange portion 71 is positioned on the inner surface 323 of the side wall portion 32. This reduces the occurrence of electromagnetic field disturbances inside the housing 30. In addition, the flange 70 and the first optical waveguide 41 can be easily replaced, improving maintainability.
[0051] Furthermore, in the ion trap package 10 according to the first embodiment, the housing 30 and flange 70 are made of stainless steel, a non-magnetic material, and the second sealing member 62 is made of copper, a non-magnetic material. With this configuration, because the second sealing member 62 is made of copper, a non-magnetic material, the influence of the magnetic field on the electromagnetic field above the ion trap section 50 is reduced. This makes it possible to reduce the error rate caused by the disappearance of ions P due to the influence of the magnetic field. In addition, because copper has a lower hardness than stainless steel, it is more easily crushed between the housing 30 and flange 70. This makes it possible to improve the sealing performance.
[0052] Furthermore, the ion trap package 10 according to the first embodiment has a configuration in which a transparent member 312 is located in the second opening 311. With this configuration, for example, if the first optical waveguide 41 is an optical fiber, a method can be used in which probes other than optical fibers are not inserted in the sealed space inside the housing 30, and a structure can be made in which there are no or few parts protruding into the interior. This makes it possible to reduce the occurrence of electromagnetic field disturbances inside the housing 30.
[0053] Furthermore, in the ion trap package 10 according to the first embodiment, the first optical waveguide 41 is located above the second substrate 52, and the longitudinal direction of the first optical waveguide 41 is parallel to the surface of the second substrate 52. With this configuration, one end 411 of two or more first optical waveguides 41 can face each other, and one end 411 of two or more first optical waveguides 41 can be brought close together.
[0054] Furthermore, the ion trap package 10 according to the first embodiment has a configuration in which the total length of the RF wiring is shorter than the wavelength of the current flowing through the RF wiring. With such a configuration, the amplitude of the current flowing through the RF wiring becomes small. Since a current with a small amplitude is close to a direct current, reflection is less likely to occur in the RF wiring. As a result, the RF wiring can be constructed with a single wire.
[0055] Furthermore, in the ion trap package 10 according to the first embodiment, the RF wiring is one of coaxial type, stripline type, or microstrip line type. With such a configuration, since the RF wiring has a GND line around the core line (signal line), even if the wavelength of the current flowing through the RF wiring becomes shorter, the generation of noise due to feedback current can be reduced.
[0056] Furthermore, in the ion trap package 10 according to the first embodiment, the longitudinal direction of the first optical waveguide 41 is parallel to the RF wiring. With this configuration, since electromagnetic fields of different frequencies, namely light and RF signals (currents), propagate simultaneously in the same direction, the generation of parasitic elements can be reduced compared to the case where different electromagnetic fields of light and RF signals (currents) intersect.
[0057] Furthermore, in the ion trap package 10 according to the first embodiment, the material of the metallized conductor forming the carrier substrate 20 is one of the non-magnetic materials tungsten, molybdenum, copper, or composite materials thereof. With this configuration, the influence of the magnetic field on the electromagnetic field above the ion trap section 50 is reduced. As a result, the error rate caused by the annihilation of ions due to the influence of the magnetic field can be reduced.
[0058] Furthermore, the ion trap package 10 according to the first embodiment has a configuration in which the main body portion 413 of the first optical waveguide has slack. With this configuration, it is possible to mitigate dimensional changes caused by the difference in thermal expansion coefficients between the housing 30 and the carrier substrate 20. This makes it possible to reduce the occurrence of misalignment of one end 411 of the first optical waveguide 41.
[0059] The ion trap package array 100 according to the first embodiment will be described with reference to Figure 7. Figure 7 is a schematic plan view showing the ion trap package array 100 according to the first embodiment. In addition to the ion trap package 10, Figure 7 only shows the second optical waveguide 42 for forming the ion trap package array 100.
[0060] As shown in Figure 7, the ion trap package array 100 according to the first embodiment comprises a plurality of ion trap packages 10. The plurality of ion trap packages 10 are optically connected to each other by a second optical waveguide 42. The second optical waveguide 42 for optical connection may be an optical fiber.
[0061] In the example shown in Figure 7, the number of ion trap packages 10 is six. However, when developing various devices that utilize the principle of ion traps, which are mechanical phenomena possessing both wave and particle properties, it is advisable to increase the number of ion trap packages 10.
[0062] The operation of the ion trap package array 100 is described below. Devices using the principle of ion traps process information using a basic unit called a q-bit. This method of information processing is suitable for computation and long-distance communication. The basic unit of a q-bit can simultaneously exist in different states. These different states are the presence and absence of ion P (see Figure 3). Ion P changes between these two states of presence and absence. This change in ion P is faster than the transition speed between "0" and "1" caused by the electron mobility of silicon semiconductors.
[0063] Furthermore, the ion trap uses an electromagnetic field to confine ions (atomic ions) P in free space, and performs q-bit optical addressing and readout via one or more light (laser beams). The ion trap package 10 of this disclosure has an approximate size of 400 mm. 2 The following applies: In the case of such a small ion trap package 10, it is necessary to prepare the environment on the ion trap section 50.
[0064] The environment on the ion trap section 50 can be described by the following parameters. These parameters include temperature, impurity level, and homogeneity of the cooling laser. The ion trap package 10 of this disclosure can improve the homogeneity of the cooling laser. This is because, due to the small package size, even a small quantity of ions P can be stably created within that space, forming two states without instability due to the presence or absence of ions P.
[0065] The ion trap package array 100 of this disclosure is composed of many such small spaces. In other words, by connecting ion trap packages 10 of the above size, the array as a whole will possess a large number of stable ions P. For this reason, in the ion trap package array 100 of this disclosure, the distance between opposing optical fibers, which are the second optical waveguides 42, arranged inside each ion trap package 10 is important. The longest of these distances should be the length of the ion trap section 50 in the longitudinal direction or the length between its diagonals. The shortest distance should be longer than the distance between two ions P that are in close proximity. Specifically, a distance of 0.001 mm to 50 mm can be given as an example.
[0066] In the ion trap package array 100 according to the first embodiment, multiple ion trap packages 10 are connected to each other by a second optical waveguide 42, allowing multiple ion trap packages 10 to be arranged in a space-saving manner. This makes it possible to miniaturize the ion trap package array 100.
[0067] Referring to Figure 8, an apparatus 200 equipped with an ion trap package array 100 according to the first embodiment will be described. Figure 8 is a schematic diagram showing an apparatus 200 equipped with an ion trap package array 100 according to the first embodiment.
[0068] As shown in Figure 8, the apparatus 200 (hereinafter simply referred to as "apparatus") equipped with the ion trap package array 100 includes the ion trap package array 100 described above. In this way, by providing the ion trap package array 100, an information processing device integrating a large number of ion trap packages 10 (see Figure 3, etc.) can be realized.
[0069] For example, device 200 is 400 mm 2 Even if a device were to be constructed by integrating a large number of the ion trap packages 10 described below (for example, 1,000 to 100,000 units), it would still be small enough to be installed inside a house, comparable in size to high-performance information processing devices currently available.
[0070] The apparatus 200 according to the first embodiment can be miniaturized by including the above-mentioned ion trap package array 100.
[0071] (Second Embodiment) Figure 9 is a schematic side cross-sectional view showing the ion trap package 80 according to the second embodiment. Note that Figure 9 is a cross-sectional view from the same direction as the cross-sectional view shown in Figure 3, that is, a view in the positive direction of the Y-axis, and is a more schematic representation than the cross-sectional view shown in Figure 3.
[0072] As shown in Figure 9, in the second embodiment, the ion trap package 80 may include a partition member 81. The partition member 81 may be located between the ceiling portion 31 of the housing 30 and the mounting area of the carrier substrate 20. The partition member 81 may be located between the ceiling portion 31 and the ion trap portion 50. In the second embodiment, one end 411 of the first optical waveguide 41 may be fixed to the partition member 81.
[0073] Furthermore, the partition member 81 may be positioned inside the housing 30 so as to separate the ion source (not shown) and the ion trap section 50. The partition member 81 should shield against heat generated from the ion source but allow the atomic plume to pass through. The partition member 81 may also be a porous body, for example, a metal or ceramic plate with multiple pores formed within it.
[0074] In the ion trap package 80 according to the second embodiment, one end 411 of the first optical waveguide 41 is fixed to a partition member 81. For example, if one end of the first optical waveguide 41 is fixed to the ion trap section 50, the position of the first optical waveguide 41 will be adjusted after the housing 30 is attached to the carrier substrate 20. In this case, the position of one end 411 of the first optical waveguide 41 will be adjusted while looking through the first opening 321 and the second opening 311. As a result, the position of the ion trap section 50 will be shifted relative to the ion trap section 50, and misalignment of the ion trap section 50 and the first optical waveguide 41 is likely to occur. However, according to the configuration of the second embodiment, one end 411 of the first optical waveguide 41 is not directly fixed to the ion trap section 50, but is fixed to a partition member 81 located away from the ion trap section 50. As a result, it becomes possible to determine the positional relationship between the ion trap section 50 and the first optical waveguide 41 at a stage before attaching the housing 30 to the carrier substrate 20. This reduces the occurrence of misalignment between the ion trap section 50 and the first optical waveguide 41. Furthermore, by positioning the partition member 81 to separate the ion source and the ion trap section 50, the heating operation of the ion source is less likely to affect the ion trap section 50.
[0075] Furthermore, in an ion trap package array in which multiple ion trap packages 80 according to the second embodiment are connected to each other by a second optical waveguide 42, multiple ion trap packages 10 can be arranged in a space-saving manner, similar to the ion trap package array 100 according to the first embodiment. This makes it possible to miniaturize the ion trap package array. Also, in a device equipped with this ion trap package array, miniaturization is possible, similar to the device 200 according to the first embodiment.
[0076] A green sheet was prepared by mixing alumina powder with an organic vehicle. Through holes were formed in the green sheet, then conductive paste was embedded in the holes, and a printed pattern sheet was created. A through hole (first through hole) 26 used for reduced pressure was left open.
[0077] A raw matrix laminate was fabricated by stacking four layers of pattern sheets. This matrix laminate was then cut into individual pieces and fired to produce ceramic wiring substrates that would become carrier substrates 20. The size of the carrier substrate 20 was 20 mm x 20 mm in area and 0.8 mm in thickness. Au plating was formed on the exposed wiring portions of the surface of the carrier substrate 20.
[0078] A housing 30 was prepared having two first openings 321 and one second opening 311. The housing 30 has the structure shown in Figure 3 and is made of stainless steel. A transparent member 312 was fixed to the second opening 311, which is used to observe the state of ion P, by a metal (AuSn) fixing part (third fixing part) 313.
[0079] A porous partition member 81, also made of stainless steel, may be attached to the side wall portion 32, which is a component of the housing 30, so as to be parallel to the ceiling portion 31, which is a component of the housing 30. In this case, the ion source is installed on the ceiling portion 31 side above the partition member 81, i.e., on the upper side. A fixing portion (first fixing portion) 412 is formed in the partition member 81 for fixing the first optical fiber (hereinafter, the first optical waveguide is referred to as the "first optical fiber").
[0080] The first optical fiber installed in the housing 30 has one end 411 positioned in the center of the ion trap section 50. Two first optical fibers 41 are arranged facing each other inside the housing 30. The distance between the two ends 411 of the first optical fibers 41 is 2 mm.
[0081] The first fixed part 412 is cylindrical. The first opening 321 is positioned on the opposite side of the partition member 81 from where the ion source is installed, i.e., on the lower side. The ion source is designed to allow electric heating by forming a hole in the ceiling part 31 and drawing in wiring for the power supply from the outside. A glass sealant was also used for the hole formed in the ceiling part 31.
[0082] The first optical fiber 41 was inserted through the first opening 321 and reached the first fixing section 412. Glass sealing material was used to fix the first optical fiber 41 to each of the two first openings 321.
[0083] A copper pipe member 27 for pressure reduction was connected to the second surface 22, which is the back surface of the carrier substrate 20. The connection position of the pipe member 27 was a first through-hole 26 that had been formed in advance when the ceramic wiring substrate was manufactured. A Ni-Au plating film was formed on the inner wall surface of the first through-hole 26. The cylindrical pipe member 27 was inserted and fixed into the first through-hole 26 on which the plating film had been formed. In addition, a glass sealant was used between the inner wall surface of the first through-hole 26 and the pipe member 27 in order to fix the pipe member 27.
[0084] The ion trap section 50 was prepared by forming microstrip wiring for RF (RF wiring) and wiring for DC (DC wiring) on the surface of a ceramic substrate. Each wiring was oriented in the longitudinal direction of the ceramic substrate. The shape of the ion trap section 50 is rectangular. The size of the ion trap section 50 is 6 mm x 5 mm in area and 0.1 mm in thickness. It was formed by depositing a conductor (Ti / Pt / Au) onto a glass plate. The ion trap section 50 thus prepared was attached to the center of the carrier substrate 20 using a resin adhesive.
[0085] The housing 30 was placed over the carrier substrate 20. The side wall portion 32 of the housing 30 was bonded to the peripheral edge of the carrier substrate 20. A first sealing member 61 made of the brazing material Ag-Cu was used to bond the peripheral edge of the carrier substrate 20 and the side wall portion 32 of the housing 30. In this way, the ion trap package 10 was obtained.
[0086] In the ion trap package 10, which was fabricated by fixing the housing 30 to the carrier substrate 20, the distance between the two installed optical fibers 41 was within the range of 5 mm ± 0.01 mm.
[0087] Six such ion trap packages 10 were fabricated and connected by a second optical waveguide 42, which is a second optical fiber (hereinafter, the second optical waveguide is referred to as the "second optical fiber") attached to each ion trap package 10 to create an ion trap package array 100.
[0088] When the inside of one ion trap package 10 was depressurized and a cooling laser was driven to generate ions P, a camera installed in the second opening 311 captured the presence or absence of ions P. When the other five connected ion trap packages 10 were driven in the same manner, the presence or absence of ions P was also captured from the other connected ion trap packages 10.
[0089] Although the present disclosure has been described in detail above, this disclosure is not limited to the embodiments described above, and various modifications and improvements are possible without departing from the gist of this disclosure.
[0090] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. Indeed, the above embodiments can be embodied in a variety of forms. Furthermore, the above embodiments may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.
[0091] Furthermore, this technology can also take the following configurations: (1) An ion trap package on which an ion trap section for confining ions is mounted, the ion trap package comprising: a carrier substrate having a first surface and a second surface located opposite to the first surface, with the first surface having a mounting area for the ion trap section; and a concave housing located on the first surface and covering the mounting area, having a ceiling portion and a side wall portion extending from the ceiling portion toward the first surface, wherein the side wall portion has a plurality of first openings through which a plurality of first optical waveguides are inserted from the outside of the side wall portion toward the mounting area inside the housing. (2) The ion trap package according to (1) above, wherein the material of the housing is a non-magnetic material. (3) The ion trap package according to (1) or (2) above, comprising a plurality of first optical waveguides and the ion trap section, wherein one end of each of the plurality of first optical waveguides is located above the ion trap section and is in close proximity to each other. (4) An ion trap package according to any one of (1) to (3) above, comprising a first sealing member that joins the carrier substrate and the housing, wherein the material of the first sealing member is a non-magnetic material with a magnetic permeability of 1.1 or less. (5) An ion trap package according to any one of (1) to (4) above, comprising a flange located at the first opening and a second sealing member, wherein the flange portion is located on the outer surface of the side wall portion and has a through hole through which the first optical waveguide is inserted, and the second sealing member is located between the flange portion and the outer surface. (6) An ion trap package according to (5) above, wherein the material of the housing and the flange is stainless steel, a non-magnetic material, and the material of the second sealing member is copper, a non-magnetic material. (7) An ion trap package according to any one of (1) to (6) above, wherein the ceiling portion has a second opening that penetrates the ceiling portion and is located above the mounting area, and a transparent member located at the second opening.(8) An ion trap package according to any one of (1) to (7) above, comprising a partition member located between the ceiling portion and the mounting area, wherein one end of the first optical waveguide located inside the housing is fixed to the partition member. (9) An ion trap package according to any one of (1) to (8) above, wherein the ion trap portion comprises a substrate and wiring located on the surface of the substrate, the first optical waveguide is located above the substrate, and the longitudinal direction of the first optical waveguide is parallel to the surface of the substrate. (10) An ion trap package according to (9) above, wherein the ion trap portion comprises RF (Radio Frequency) wiring as the wiring, the total length of the RF wiring is shorter than the wavelength of the current flowing through the RF wiring. (11) An ion trap package according to (10) above, wherein the type of RF wiring is one of coaxial type, stripline type, and microstrip line type. (12) The ion trap package according to (10) or (11) above, wherein the longitudinal direction of the first optical waveguide is parallel to the RF wiring. (13) The ion trap package according to any one of (1) to (12) above, wherein the carrier substrate is a composite of a ceramic substrate and a metallized conductor, and the material of the metallized conductor is any of the nonmagnetic materials tungsten, molybdenum, copper, and composite materials thereof. (14) The ion trap package according to any one of (1) to (13) above, wherein the portion of the first optical waveguide from one end located inside the housing to the side wall portion is the main body portion, and the main body portion has slack. (15) An ion trap package array comprising a plurality of ion trap packages according to any one of (1) to (14) above, wherein the plurality of ion trap packages are connected to each other by a second optical waveguide. (16) An apparatus comprising the ion trap package array according to (15) above.
[0092] 10 Ion trap package 20 Carrier substrate 21 First surface 22 Second surface 30 Housing 31 Ceiling 32 Side wall 41 First optical waveguide 42 Second optical waveguide 50 Ion trap section 52 Substrate 61 First sealing member 62 Second sealing member 70 Flange 71 Flange portion 72 Through hole 80 Ion trap package 81 Partition member 100 Ion trap package array 200 Device 311 Second opening 312 Transparent member 321 First opening 322 External surface 411 One end A Mounting area P Ion
Claims
1. An ion trap package equipped with an ion trap section for confining ions, comprising: a carrier substrate having a first surface and a second surface opposite to the first surface, the first surface having a mounting area for the ion trap section; and a concave housing located on the first surface and covering the mounting area, having a ceiling portion and side wall portions extending from the ceiling portion toward the first surface, wherein the side wall portion has a plurality of first openings through which a plurality of first optical waveguides are inserted from the outside of the side wall portion toward the mounting area inside the housing.
2. The ion trap package according to claim 1, wherein the material of the housing is a non-magnetic material.
3. The ion trap package according to claim 1 or 2, comprising a plurality of first optical waveguides and the ion trap section, wherein one end of each of the plurality of first optical waveguides is located above the ion trap section and is in close proximity to each other.
4. An ion trap package according to any one of claims 1 to 3, comprising a first sealing member that joins the carrier substrate and the housing, wherein the material of the first sealing member is a non-magnetic material with a magnetic permeability of 1.1 or less.
5. An ion trap package according to any one of claims 1 to 4, comprising a flange located at the first opening and a second sealing member, wherein the flange portion is located on the outer surface of the side wall portion and has a through hole through which the first optical waveguide is inserted, and the second sealing member is located between the flange portion and the outer surface.
6. The ion trap package according to claim 5, wherein the material of the housing and the flange is stainless steel, a non-magnetic material, and the material of the second sealing member is copper, a non-magnetic material.
7. The ion trap package according to any one of claims 1 to 6, wherein the ceiling portion has a second opening that penetrates the ceiling portion and is located above the mounting area, and a transparent member located at the second opening.
8. An ion trap package according to any one of claims 1 to 7, comprising a partition member located between the ceiling portion and the mounting area, wherein one end of the first optical waveguide located inside the housing is fixed to the partition member.
9. The ion trap package according to any one of claims 1 to 8, wherein the ion trap portion comprises a substrate and wiring located on the surface of the substrate, the first optical waveguide is located above the substrate, and the longitudinal direction of the first optical waveguide is parallel to the surface of the substrate.
10. The ion trap package according to claim 9, wherein the ion trap section has an RF (Radio Frequency) wiring as the wiring, and the total length of the RF wiring is shorter than the wavelength of the current flowing through the RF wiring.
11. The ion trap package according to claim 10, wherein the type of RF wiring is one of coaxial type, stripline type, and microstrip line type.
12. The ion trap package according to claim 10 or 11, wherein the longitudinal direction of the first optical waveguide is parallel to the RF wiring.
13. The ion trap package according to any one of claims 1 to 12, wherein the carrier substrate is a composite of a ceramic substrate and a metallized conductor, and the material of the metallized conductor is any one of the nonmagnetic materials tungsten, molybdenum, copper, and composite materials thereof.
14. The ion trap package according to any one of claims 1 to 13, wherein, when the portion of the first optical waveguide from one end located inside the housing to the side wall portion is defined as the main body portion, the main body portion has slack.
15. An ion trap package array comprising a plurality of ion trap packages according to any one of claims 1 to 14, wherein the plurality of ion trap packages are connected to one another by a second optical waveguide.
16. An apparatus comprising the ion trap package array described in claim 15.