Method for producing polishing pad

Abstract

A method for producing a polishing pad using a filler-containing base material including a filler that does not release metal ions and having a surface with an uneven shape formed by the filler. Alternatively, a method for producing a polishing pad using a surface-treated base material having a surface treated by at least one treatment method selected from the group consisting of polishing using an abrasive that does not release metal ions, blasting using an abrasive that does not release metal ions, laser treatment, plasma discharge treatment, chemical treatment using an etching solution containing no metal ions, flame treatment, ultraviolet ozone treatment, and primer treatment.

Description

Method for manufacturing a polishing pad Cross-reference to Related Applications

[0001] The present application claims priority from Japanese Patent Application No. 2025-052160, which is incorporated herein by reference.

[0002] The present invention relates to a method for manufacturing a polishing pad.

[0003] Polishing pads are used in chemical mechanical polishing (CMP) in the manufacture of wafers, semiconductor devices and the like. For example, in a wafer planarization process, both a disk-shaped wafer fixed to a rotating head and a disk-shaped polishing pad fixed to a surface plate are rotated, while a polishing slurry containing abrasive grains is supplied between the wafer and the polishing pad to polish the wafer.

[0004] Conventionally, in CMP, contamination of a workpiece such as a wafer with metal elements that can degrade electrical characteristics has been a problematic issue. For example, when metal elements such as Fe are contaminated in a wafer for manufacturing LSI, this causes malfunction of LSI, such as failure to maintain electrical insulation between adjacent semiconductor elements such as transistors. In addition, there is a risk that the insulating property of a silicon oxide film used as an insulating film may be reduced.

[0005] Therefore, attempts have been made to reduce the content of metal elements in polishing pads. For example, Patent Document 1 is based on the finding that the content concentrations of Fe, Ni, Cu, Zn, and Al contained in a polishing pad have a great influence on the yield of semiconductor devices (increase in defective products), while the content concentrations of Mg and Cr hardly affect the yield. It is proposed that the content concentration of Fe in each of the polishing region and the light-transmitting region is 0.3 ppm or less, the content concentration of Ni is 1.0 ppm or less, the content concentration of Cu is 0.5 ppm or less, the content concentration of Zn is 0.1 ppm or less, and the content concentration of Al is 1.2 ppm or less. In addition, Patent Document 1 proposes using non-metallic tools or chromium-plated tools when forming the polishing region and the light-transmitting region. Note that the polishing region and the light-transmitting region in Patent Document 1 are regions that form a contact surface capable of coming into contact with a wafer in CMP.

[0006] Japanese Patent Application Publication No. 2006-224282

[0007] Incidentally, some polishing pads are known to have a polishing layer laminated on the first surface of a substrate such as a PET film. Furthermore, it is thought that not only the polishing layer that can come into contact with the wafer during CMP, but also metal elements mixed into the substrate that do not come into contact with the wafer, can cause wafer contamination.

[0008] Furthermore, in order to improve the adhesion of the polishing layer to the substrate, the first surface of the substrate is subjected to a surface treatment. However, there is a risk that metal elements may be introduced into the substrate during this surface treatment.

[0009] In view of the above circumstances, the object of the present invention is to provide a method for manufacturing an abrasive pad that can improve the adhesion between the substrate and the abrasive layer while suppressing the inclusion of metal elements.

[0010] A method for manufacturing a polishing pad according to the present invention comprises a lamination step of forming a polishing layer on the first surface of a substrate, wherein the substrate is a filler-containing substrate having a first surface on which an uneven shape is formed by a filler that does not leach metal ions, or a surface-treated substrate having the first surface that has been surface-treated by at least one treatment method selected from the group consisting of polishing using an abrasive that does not leach metal ions, blasting using an abrasive that does not leach metal ions, laser treatment, plasma discharge treatment, chemical treatment using an etching solution that does not contain metal ions, flame treatment, ultraviolet ozone treatment, and primer treatment.

[0011] According to the present invention, it is possible to provide a method for manufacturing an abrasive pad that can improve the adhesion between the substrate and the abrasive layer while suppressing the inclusion of metal elements.

[0012] This is a schematic cross-sectional view of a polishing pad according to one embodiment of the manufacturing method. This is a schematic diagram of a polishing apparatus incorporating a polishing pad according to one embodiment of the manufacturing method. These are SEM images of the peeled surfaces of the substrate and polishing layer of Example 1 and Comparative Example 1, respectively.

[0013] The following describes a method for manufacturing a polishing pad according to an embodiment of the present invention, with reference to the drawings.

[0014] First, the polishing pad according to this embodiment will be described.

[0015] As shown in Figure 1, the polishing pad 1 according to this embodiment comprises a base material 11 made of a resin film and a polishing layer 12 laminated on the base material 11. The base material 11 has a first surface 111 on which the polishing layer 12 is laminated and a second surface 112 on the opposite side of the first surface 111 in the thickness direction. The polishing layer 12 has a polishing surface 121 that comes into contact with the object to be polished during chemical mechanical polishing (CMP).

[0016] A thermoplastic resin is preferred as the resin constituting the base material. Examples of thermoplastic resins include polyesters such as polyethylene terephthalate (PET), polybutylene terephthalate, and polyethylene naphthalate; polyolefins such as polyethylene and polypropylene; ethylene-vinyl acetate copolymers; acrylonitrile butadiene styrene copolymers; polyacetal; polyvinyl chloride; polyvinylidene chloride; polycarbonate; polystyrene; polymethyl methacrylate; polymethylpentene; polysulfone; polyetheretherketone; polyethersulfone; polyamide; and polyimide. Among these, polyesters such as polyethylene terephthalate (PET) are preferred.

[0017] The substrate may have a single-layer structure consisting of one resin film, or it may have a multilayer structure in which multiple resin films are laminated together. The thickness of the substrate is, for example, 20 μm to 400 μm. Preferably, the thickness of the substrate is 20 μm to 250 μm.

[0018] The polishing layer in this embodiment is made of polyurethane resin foam. The polishing layer in this embodiment is formed by forming a porous layer on the substrate using a wet solidification method using polyurethane, and then buffing the surface of the porous layer. Buffing opens up numerous pores contained in the porous layer on the polishing surface, thereby obtaining the polishing layer. The polishing pad in this embodiment is a so-called soft type polishing pad.

[0019] As shown in Figure 2, the polishing pad 1 according to this embodiment is incorporated into a polishing apparatus 100 and used in CMP. The polishing apparatus 100 comprises a disc-shaped polishing pad 1, a base plate 2 having a surface 21 for fixing the polishing pad 1, a rotating head 3 equipped with a holding material 31 for fixing a disc-shaped workpiece W, and a slurry supply device 4 for supplying polishing slurry containing abrasive grains to the polishing pad 1. The base plate 2 is configured to rotate the polishing pad 1 circumferentially in a horizontal plane. The rotating head 3 is configured to rotate the workpiece W circumferentially in a horizontal plane. The polishing apparatus 100 is configured to polish the workpiece W and the polishing pad 1 by supplying polishing slurry between the workpiece W's polishing surface w1 and the polishing pad 1 while rotating the workpiece W and polishing pad 1 respectively using the base plate 2 and the rotating head 3, thereby polishing the workpiece w1. The base plate 2 is also configured to control the temperature of its surface 21 so that the polishing pad 1 can be cooled or heated.

[0020] Examples of the materials to be polished include wafers to which countermeasures should be taken against contamination with metallic elements, and semiconductor devices manufactured using such wafers. Examples of such wafers include Si wafers, SiC wafers, GaN wafers, sapphire wafers, and LCD substrates. In the manufacturing of wafers and semiconductor devices manufactured using such wafers, countermeasures against the inclusion of highly conductive components that may affect their electrical properties are of particular importance.

[0021] From this perspective, the first target, which has the highest priority for countermeasures, is metal elements and cations of said metal elements. Examples of such metal elements include manganese, iron, cobalt, nickel, copper, aluminum, titanium, calcium, and zinc. Second target, which has a relatively high priority for countermeasures, is semiconductor elements (so-called metalloids) such as silicon, germanium, and selenium. In this specification, the term "metal elements" includes the semiconductor elements mentioned above.

[0022] The content of each metal element in the substrate is preferably 1000 ppb or less, and more preferably 500 ppb or less. Specifically, the content of iron as the metal element is preferably 1000 ppb or less, and more preferably 500 ppb or less. The content of aluminum as the metal element is preferably 1000 ppb or less, and more preferably 500 ppb or less. The content of titanium as the metal element is preferably 1000 ppb or less, more preferably 500 ppb or less, and even more preferably 100 ppb or less. The content of nickel as the metal element is preferably 1000 ppb or less, more preferably 500 ppb or less, and even more preferably 10 ppb or less. The content of silicon as the metal element is preferably 1000 ppb or less.

[0023] The content of metal elements in the aforementioned substrate can be measured by ICP emission spectrometry. Specifically, the Agilent 8900 ICP-MS / MS manufactured by Agilent Technologies can be used as the measuring instrument. As for the sample preparation method, a test piece cut from the substrate is weighed, and the test piece is heated while sulfuric acid is gradually added to obtain a sample by wet decomposition. Then, a dilute acid (dilution) with an internal standard element added and hydrofluoric acid are added, and quantitative analysis of the metals contained in the sample is performed using the above instrument.

[0024] Next, a method for manufacturing a polishing pad according to this embodiment will be described.

[0025] The method for manufacturing a polishing pad according to this embodiment comprises a preparation step of preparing a base material and a lamination step of laminating a polishing layer onto the first surface of the base material.

[0026] First, in the preparation step of the first embodiment, a filler-containing substrate is prepared in which a filler that does not elute the metal ions is kneaded. The filler-containing substrate contains a resin and the filler, and has the first surface on which an uneven shape derived from the filler is formed. Such a filler-containing substrate can improve adhesion to the polishing layer through the anchoring effect between the first surface having an uneven shape derived from the filler and the polishing layer.

[0027] Preferably, the filler does not cause the metal ions to leach out under the polishing conditions of CMP.

[0028] The statement that the filler does not elute metal ions means that when the same amount of the same type of filler contained in the substrate is used, a sample is prepared according to the method specified in JIS K0058-1, and the sample is measured by ICP emission spectrometry, the amount of each metal element (metal ion) eluted is 1000 ppb or less. Preferably, the amount of each metal element (metal ion) eluted is 500 ppb or less. The solvent specified in JIS is the solution that constitutes the polishing slurry in CMP.

[0029] The filler is preferably an organic filler made of an organic substance. Alternatively, the filler may be an inorganic filler that does not elute metal ions. The filler is at least one selected from the organic filler and the inorganic filler. That is, the filler may be only one selected from the organic filler and the inorganic filler, or it may be two or more.

[0030] The organic filler may be composed of resin particles. Examples of the resin particles include acrylic resin particles, urethane resin particles, styrene resin particles, and ethylene resin particles. The organic filler may be composed of resin fibers. Examples of the resin fibers include aramid fibers, nylon fibers, polyester fibers, acrylic fibers, polypropylene fibers, acetate fibers, and urethane fibers. In addition to these, the organic filler may be composed of cellulose fibers, natural fibers, and the like.

[0031] The inorganic filler may be composed of high-purity ceramic particles. Examples of high-purity ceramic particles include high-purity silica particles, high-purity zirconia particles, high-purity silicon carbide particles, and high-purity boron carbide particles. The content of each of the above-mentioned metal elements in the high-purity ceramic particles is preferably 1,000 ppb or less. A substrate containing high-purity ceramic particles has the advantage that, because the high thermal conductivity of the high-purity ceramic particles makes it easy to conduct heat from the surface of the polishing plate to the polishing layer. This makes it easier to control the temperature of the polishing surface, which is one of the important factors in CMP.

[0032] As the high-purity silica particles, those obtained by the sol-gel method are preferred because they easily form an uneven surface on the first surface of the substrate. Examples of such high-purity silica particles include Sunseal® manufactured by Tokuyama Corporation. On the other hand, in order to reduce the content of metal elements in the substrate, fumed silica obtained by hydrolyzing chlorosilane in an oxygen-hydrogen flame is preferred as the high-purity silica particles. Examples of such high-purity silica particles include AEROSIL® manufactured by Nippon Aerosil Co., Ltd. and Excelica® manufactured by Tokuyama Corporation.

[0033] The inorganic filler may be composed of glass particles (glass fibers).

[0034] The inorganic filler has a volume resistivity of 10 ８ Preferably, it is Ω·cm or more, and 10 １０ Ω·cm or more is more preferable, 10 １２ A value of Ω·cm or higher is even more preferable. The volume resistivity can be measured according to the measurement method specified in JIS C2141.

[0035] The filler may be a particle commonly known to constitute a metal adsorbent, such as silica particles. With such a filler, even if it contains a metal element, the elution of the metal element from the substrate can be suppressed.

[0036] The average particle diameter of the filler is preferably 0.5 μm or more. For example, the average particle diameter of the filler is 20 μm or less. Note that the average particle diameter refers to the median diameter measured by laser diffraction scattering.

[0037] If the filler is an organic filler, the content of the organic filler is, for example, 1 part by mass or more and 20 parts by mass or less per 100 parts by mass of resin contained in the base material. On the other hand, if the filler is an inorganic filler, the content of the inorganic filler is preferably 1 part by mass or more and 10 parts by mass or less, and more preferably 1 part by mass or more and 5 parts by mass or less per 100 parts by mass of resin contained in the base material.

[0038] Next, in the preparation step of the second embodiment, a surface-treated substrate is prepared by a surface treatment method. The surface-treated substrate has the first surface that has been treated by the surface treatment method. Examples of the surface treatment method include polishing, blasting, laser treatment, plasma discharge treatment, and chemical treatment that can form an uneven shape on the first surface. Examples of the surface treatment method include ultraviolet ozone treatment and flame treatment that can introduce at least one polar group from hydroxyl groups, aldehyde groups, and carboxyl groups onto the first surface. Alternatively, the surface treatment method may be a primer treatment that forms a primer layer interposed between the first surface and the polished layer.

[0039] In the polishing process described above, an abrasive that does not dissolve metal ions is used. Preferably, such an abrasive is composed of high-purity ceramic particles such as high-purity silica particles, high-purity zirconia particles, high-purity silicon carbide particles, and high-purity boron carbide particles, as well as diamond particles and glass particles. The content of each of the above-mentioned metal elements in the high-purity ceramic particles is preferably 1,000 ppb or less. Preferably, the abrasive is composed of particles of the same type as those constituting the abrasive particles of the polishing slurry, such as silica particles.

[0040] In the polishing treatment, for example, after polishing along a first direction on the first surface of the base material, polishing is performed along a second direction intersecting the first direction. The intersection angle between the first direction and the second direction is, for example, 90±10°. Next, polishing may be performed in a circular motion. According to such a polishing treatment, an uneven shape can be formed on the first surface of the base material. Then, due to the anchor effect between the first surface having the uneven shape and the polishing layer, the adhesion to the polishing layer can be improved.

[0041] Since the polishing treatment applies physical impact to the base material, the resin constituting the base material is preferably a hard resin such as polyester, polyethylene, polypropylene, polystyrene, polyvinyl chloride, polycarbonate, or polyimide.

[0042] In the blasting treatment, an abrasive that does not elute metal ions is used. Such abrasives are preferably composed of high-purity ceramic particles such as high-purity silica particles, high-purity zirconia particles, high-purity silicon carbide particles, and high-purity boron carbide particles, diamond particles, glass particles, and carbon dioxide particles (dry ice particles). The content of each of the aforementioned metal elements in the high-purity ceramic particles is preferably 1,000 ppb or less. The abrasive is preferably composed of the same type of particles as the particles constituting the abrasive grains of the polishing slurry.

[0043] In the blasting treatment, a dry blasting method in which the abrasive in a dry state is sprayed onto the first surface of the base material may be adopted, or a wet blasting method in which a suspension containing the abrasive (for example, an aqueous suspension) is sprayed onto the first surface of the base material may be adopted. According to such a blasting treatment, an uneven shape can be formed on the first surface of the base material. Then, due to the anchor effect between the first surface having the uneven shape and the polishing layer, the adhesion to the polishing layer can be improved.

[0044] Since the blasting treatment applies physical impact to the base material, the resin constituting the base material is preferably the aforementioned hard resin.

[0045] In the laser processing described above, a laser is irradiated onto the first surface of the substrate to form a plurality of grooves and a plurality of holes. That is, the laser processing creates an uneven surface on the first surface of the substrate that includes a plurality of grooves and a plurality of holes. Examples of lasers used in the laser processing include solid-state lasers such as YAG lasers, gaseous lasers such as carbon dioxide lasers, and semiconductor lasers. Since the thermoplastic resin constituting the substrate has a high absorption rate in the infrared wavelength band, an infrared laser is preferred from the viewpoint of efficiency. Laser processing makes it possible to obtain an anchoring effect between the first surface of the substrate having an uneven surface and the polished layer. Furthermore, since no physical damage occurs on the first surface of the substrate, the anchoring effect due to the uneven surface is easily obtained.

[0046] In the plasma discharge treatment described above, a plasma discharge is applied to the first surface of the substrate in the presence of at least one of oxygen and ozone. The plasma discharge may be a corona discharge. The oxygen and ozone may be supplied from air. In the plasma discharge treatment described above, the plasma discharge may be continued on the first surface of the substrate until micro-order irregularities are formed on the first surface of the substrate. This makes it possible to obtain an anchoring effect between the first surface of the substrate having an irregular shape and the polished layer. Furthermore, since no physical damage occurs to the first surface of the substrate, the anchoring effect due to the irregular shape is easily obtained.

[0047] In the aforementioned chemical treatment, a metal-free etching solution is brought into contact with the first surface of the substrate to form irregularities on the first surface. Examples of the etching solution include aqueous solutions containing inorganic acids such as sulfuric acid and nitric acid, aqueous solutions containing organic acids such as toluenesulfonic acid, and solutions containing organic bases such as amines. Through this chemical treatment, an anchoring effect can be obtained between the first surface of the substrate having an irregular shape and the polished layer. Furthermore, since no physical damage occurs to the first surface of the substrate, the anchoring effect due to the irregular shape is easily obtained.

[0048] In the flame treatment described above, an oxidation reaction is induced by the flame on the first surface of the substrate, generating the polar groups on the first surface. As a result, the affinity of the first surface of the substrate with the coating liquid used in the wet solidification method is increased, and the adhesion between the substrate and the polished layer may be improved.

[0049] In the aforementioned ultraviolet ozone treatment, ozone is generated from oxygen by irradiation with ultraviolet light at 184.9 nm, and the ozone is decomposed by irradiation with ultraviolet light at 253.7 nm. The oxygen atoms generated during the generation and decomposition of ozone act on the first surface of the substrate, generating the polar groups on the first surface. As a result, the affinity of the first surface of the substrate to the coating liquid used in the wet solidification method is increased, and the adhesion between the substrate and the polished layer can be improved.

[0050] In the priming treatment described above, the primer is applied to the first surface of the substrate. Examples of the primer include styrene-butadiene rubber, vinylidene chloride resin, acrylic resin, epoxy resin, etc., dissolved in an organic solvent such as dimethylformamide. Such primers are particularly preferred for improving the adhesion between the substrate, which is made of PET film, and the polished layer.

[0051] In the preparation step, at least one of the above-mentioned surface treatment methods can be used. That is, in the preparation step, only one of the above-mentioned surface treatment methods may be used, or two or more may be used.

[0052] In the surface treatment method described above, the treatment may be performed such that the water contact angle on the first surface of the substrate after treatment is smaller than the contact angle before treatment. This makes it easier for the coating liquid used in the wet solidification method to wet the first surface of the substrate, and the adhesion between the substrate and the polished layer may be improved.

[0053] Next, in the lamination process, a porous layer made of polyurethane resin foam is formed on the first surface of the substrate by a wet solidification method, and the surface of the porous layer is buffed to open the pores and create a polished layer. Furthermore, the polished layer may be embossed to form a plurality of grooves that open on the polished surface. The plurality of grooves may have shapes such as a grid or concentric circles.

[0054] The polyurethane resin constituting the abrasive layer can be obtained, for example, by reacting a diisocyanate, a polyol, and a chain extender. The polyurethane resin is one or more selected from the group consisting of polyester-based polyurethane resins, polyether-based polyurethane resins, and polycarbonate-based polyurethane resins.

[0055] Examples of the diisocyanates include diphenylmethane-4,4'-diisocyanate, trilene-2,4-diisocyanate, xylylene diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, and hexamethylene diisocyanate.

[0056] Examples of the aforementioned polyols include polyester polyols such as polyethylene adipate glycol, polypropylene adipate glycol, polyethylene propylene adipate glycol, polybutylene adipate glycol, polyethylene butylene adipate glycol, and polypentamethylene adipate glycol; polyether polyols such as polyethylene ether glycol, polypropylene ether glycol, polytetramethylene ether glycol, and polyhexamethylene ether glycol; and polycarbonate polyols such as polytetramethylene carbonate, polypentamethylene carbonate, and polyhexamethylene carbonate.

[0057] Examples of the chain extenders include glycols such as ethylene glycol, propylene glycol, butylene glycol, and diethylene glycol; diamines such as ethylenediamine, trimethylenediamine, propylenediamine, and butylenediamine; and amino alcohols.

[0058] After the lamination process, an adhesive layer may be applied to the second surface of the substrate. The adhesive layer is used to fix the polishing pad to the surface of the surface plate. The adhesive layer may be applied in the form of double-sided tape. That is, a polishing pad with double-sided tape may be manufactured.

[0059] As described above, while embodiments have been presented as examples, the method for manufacturing a polishing pad according to the present invention is not limited to the configuration of the above embodiments. Furthermore, the method for manufacturing a polishing pad according to the present invention is not limited by the effects described above. The method for manufacturing a polishing pad according to the present invention can be modified in various ways without departing from the spirit of the present invention.

[0060] For example, at least one of the above-described surface treatments may be applied to the first surface of the filler-containing substrate.

[0061] The present invention will be further described below with reference to examples, but the present invention is not limited thereto.

[0062] [Example 1] (Preparation of Substrate) The amount of resin particles (organic filler, particle size: approximately 2.5 μm) was adjusted to obtain a PET film with an arithmetic mean roughness Ra of 1.00 μm on the first surface. The content of metal elements measured by ICP emission spectrometry is shown in Table 1. (Lamination of Polished Layer) A resin solution was prepared by dissolving polyurethane resin and a surfactant in DMF. A coating layer was formed on the first surface of the PET film using the resin solution. The PET film with the coated layer was immersed in a DMF-containing solidification solution to solidify the polyurethane resin in the coating layer and form a porous layer. Next, the surface of the porous layer was buffed to form a polished layer.

[0063] [Example 2] A polishing pad was prepared in the same manner as in Example 1, except that the amount of resin particles was adjusted to set the arithmetic mean roughness Ra on the first surface of the substrate to 0.44 μm.

[0064] [Comparative Example 1] (Preparation process of the base material) Fe as an impurity ２ O ３ and Al ２ O ３ A silica containing [a specific substance] was used as an abrasive, and the first surface of a PET film was sandblasted. The arithmetic mean roughness Ra of the surface-treated first surface was 0.56 μm. (Lamination process of the polished layer) The polished layer was formed in the same manner as in Example 1.

[0065]

[0066] [Evaluation 1: Peel Strength] The peel strength between the substrate and the polishing layer was measured using the following measurement method, and the adhesion was evaluated. The results are shown in Table 2. (Measurement Method) A sample measuring 25 mm x 180 mm was taken from the polishing pad, and the tip of the sample was immersed in ethanol. Using the ethanol-immersed tip as the peeling base, the substrate and the polishing layer were peeled over a length of 30 mm to 55 mm to obtain a test piece. The test piece was placed on a SUS plate, and the peeling end and the opposite end were chucked with an arm. Then, the substrate and the polishing layer were peeled under the following measurement conditions, and the data in the area where the test force was stable was averaged to determine the peel strength. (Measurement Conditions) Equipment: Shimadzu Corporation, AG-IS (1 kN) Measurement software: TRAPEZIUM2 Test mode: Single Test type: Peel Speed: 300 mm / min

[0067]

[0068] [Evaluation 2: SEM observation of the surface after peeling] The peeled surfaces of the polished layer and the substrate obtained in the peeling process of Evaluation 1 were observed using SEM. The results are shown in Figure 3.

[0069] From the SEM image of the peeled surface of the polished layer in Figure 3, it was observed that the pore structure of the polished layer was maintained in Example 1. On the other hand, in Comparative Example 1, destruction of the pore structure of the polished layer was observed. Thus, in surface treatments that involve physical impact such as sandblasting, the surface of the first surface of the substrate is destroyed, and it was considered that the effect of increasing the roughness Ra on improving adhesion was reduced in Comparative Example 1.

[0070] 100: Polishing device, 1: Polishing pad, 2: Surface plate, 21: Surface, 3: Rotating head, 31: Holding material, 4: Slurry supply device, W: Workpiece to be polished, w1: Surface to be polished, 11: Base material, 111: First surface, 112: Second surface, 12: Polishing layer, 121: Polished surface

Claims

1. A method for manufacturing a polishing pad, comprising a lamination step of forming a polishing layer on the first surface of a substrate, wherein the substrate is a filler-containing substrate having a first surface on which an uneven shape is formed by a filler that does not leach metal ions, or a surface-treated substrate having the first surface that has been surface-treated by at least one treatment method selected from the group consisting of polishing using an abrasive that does not leach metal ions, blasting using an abrasive that does not leach metal ions, laser treatment, plasma discharge treatment, chemical treatment using an etching solution that does not contain metal ions, flame treatment, ultraviolet ozone treatment, and primer treatment.

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