Polishing composition, polishing method, and method for manufacturing semiconductor substrate

Abstract

The present disclosure provides at least one means selected from the group consisting of: means that can achieve a high effect of suppressing the polishing rate of a titanium material; and means that increase the selection ratio of tungsten material in relation to materials other than tungsten material, while achieving a sufficient polishing rate for the tungsten material. The present disclosure relates to a polishing composition containing modified abrasive grains and a specific compound.

Description

Polishing composition, polishing method, and method for manufacturing semiconductor substrates

[0001] This invention relates to a polishing composition, a polishing method, and a method for manufacturing a semiconductor substrate.

[0002] In recent years, with the increasing integration and performance of LSIs, embedded metal wiring (damascene wiring) has been formed. Damascene wiring structures are known to have a barrier layer formed beneath a conductive material such as copper and / or copper alloy, for purposes such as preventing the diffusion of the conductive material into the interlayer insulating film. In multilayer wiring formation methods, including the damascene method, chemical mechanical polishing (CMP) is used to smooth the substrate, remove excess metal thin films during wiring formation, and / or remove excess barrier layers on the insulating film. Various polishing compositions have been investigated for use in multilayer wiring formation methods, depending on the purpose, such as promoting polishing for specific materials and / or suppressing polishing for specific materials.

[0003] Japanese Patent Publication No. 2010-62434 discloses that by using a metal polishing solution containing a compound of a specific structure, an oxidizing agent, an organic acid, and an amine of a specific structure in the chemical mechanical polishing process of semiconductor device manufacturing, excellent polishing speed and scratch suppression of the barrier layer can be achieved.

[0004] However, conventional polishing compositions have the problem that it can be difficult to suppress the polishing rate of titanium materials, and / or that it can be difficult to improve the selectivity of tungsten materials over materials other than tungsten materials while achieving a sufficient polishing rate for tungsten materials.

[0005] Therefore, the present invention aims to provide at least one means selected from the group consisting of means that can achieve a high suppression effect on the polishing speed of titanium materials, and means that can improve the selectivity ratio of tungsten materials to materials other than tungsten materials while achieving a sufficient polishing speed for tungsten materials.

[0006] In order to solve the above problems, the inventors diligently conducted research. As a result, the inventors discovered that at least one of the above problems can be solved by using modified abrasive grains and a specific compound in combination as components of the polishing composition, and thus completed the present invention.

[0007] One aspect of the present invention for solving at least one of the above problems relates to an abrasive composition comprising modified abrasive grains and a compound that satisfies at least one of the following conditions selected from the group consisting of condition (1) and condition (2): Condition (1) The compound is a surfactant whose water-octanol partition coefficient logD at the pH of the abrasive composition is greater than 0; Condition (2) The amount of the compound adsorbed onto the quartz crystal microbalance electrode at the pH of the abrasive composition is 3 ng / cm² per unit area of ​​the quartz crystal microbalance electrode. ２ It must be the above.

[0008] Another aspect of the present invention for solving at least one of the above problems relates to an abrasive composition comprising modified abrasive grains and satisfying (I), (II), or both of the following: (I) the abrasive composition comprises an alkylphosphonic acid (salt) having 6 to 11 carbon atoms; (II) the abrasive composition comprises at least one compound selected from the group consisting of alkyl phosphate esters having 6 or more carbon atoms and salts of alkyl phosphate esters having 6 or more carbon atoms; and at least one compound selected from the group consisting of alkyl sulfonic acid (salt) having 6 or more carbon atoms, alkylbenzene sulfonic acid (salt) having 6 or more carbon atoms, alkyl sulfate esters having 6 or more carbon atoms and salts of alkyl sulfate esters having 6 or more carbon atoms.

[0009] The embodiments of the present invention will be described below, but the present invention is not limited to the embodiments described below. The embodiments described herein can be combined in any way to form other embodiments.

[0010] In this specification, "X to Y" indicating a numerical range means that the numerical values ​​(X and Y) before and after it are included as the lower and upper limits, respectively, and means "X or greater and Y or less." In this specification, "A and / or B" means that A and B, each of them, and any combination thereof are included. In this specification, unless otherwise specified, operations and measurements of physical properties, etc., are performed under conditions of room temperature (20°C or more and 25°C or less) and relative humidity of 40% RH or more and 50% RH or less.

[0011] <Polishing Composition> One aspect of the present invention (first aspect) relates to a polishing composition comprising modified abrasive grains and a compound selected from the group consisting of the following conditions (1) and (2): Condition (1) The compound is a surfactant whose water-octanol partition coefficient logD at the pH of the polishing composition is greater than 0; Condition (2) The amount of the compound adsorbed onto the quartz crystal microbalance electrode at the pH of the polishing composition is 3 ng / cm² per unit area of ​​the quartz crystal microbalance electrode. ２It must be the above.

[0012] For example, in one embodiment of the first aspect (Example 1-1), under condition (2), the adsorption amount of the compound is 40 ng / cm² per unit area of ​​the quartz crystal microbalance electrode. ２ The above describes a polishing composition according to a first embodiment, which is used for polishing an object to be polished that includes a tungsten material portion and at least one portion selected from the group consisting of portion 1 and portion 2 below, but the first embodiment is not limited to this embodiment: portion 1: titanium material portion, portion 2: portion including silicon and at least one selected from the group consisting of oxygen and nitrogen.

[0013] For example, one embodiment of the first aspect (Embodiment 1-2) is an abrasive composition used for polishing an object to be polished, comprising anionic modified silica particles, a surfactant whose water-octanol partition coefficient logD at the pH of the abrasive composition is greater than 0, an oxidizing agent, and water, having a pH of 1.0 to 6.0, and comprising a tungsten material portion and at least one portion selected from the group consisting of the following portion 1 and portion 2; however, the first aspect is not limited to this embodiment; portion 1: titanium material portion, portion 2: portion comprising silicon and at least one selected from the group consisting of oxygen and nitrogen.

[0014] For example, one embodiment of the first aspect (Embodiment 1-3) is an abrasive composition used for polishing an object to be polished, comprising surface-cationically modified silica particles, a surfactant whose water-octanol partition coefficient logD at the pH of the abrasive composition is greater than 0, an oxidizing agent, and water, having a pH of 1.0 to 6.0, and comprising a tungsten material portion and at least one portion selected from the group consisting of the following portion 1 and portion 2; however, the first aspect is not limited to this embodiment; portion 1: titanium material portion, portion 2: portion comprising silicon and at least one selected from the group consisting of oxygen and nitrogen.

[0015] For example, one embodiment of the first aspect (Embodiment 1-4) is an abrasive composition comprising silica particles chemically surface-modified with at least one silane coupling agent selected from the group consisting of silane coupling agents having amino groups and silane coupling agents having quaternary ammonium groups, a surfactant whose water-octanol partition coefficient logD at the pH of the abrasive composition is greater than 0, an oxidizing agent, and water, wherein the content of the oxidizing agent is greater than 0.005% by mass of the total mass of the abrasive composition, and the pH is 1.0 or higher and 3.0 or lower. However, the first aspect is not limited to this embodiment.

[0016] As described above, the first embodiment is not limited to embodiments 1-1 to 1-4 described above.

[0017] One aspect (second aspect) of the present invention relates to an abrasive composition comprising modified abrasive grains and satisfying (I), (II), or both of the following: (I) the abrasive composition comprises an alkylphosphonic acid (salt) having 6 to 11 carbon atoms; (II) the abrasive composition comprises at least one compound selected from the group consisting of alkyl phosphate esters having 6 or more carbon atoms and salts of alkyl phosphate esters having 6 or more carbon atoms; and at least one compound selected from the group consisting of alkyl sulfonic acid (salt) having 6 or more carbon atoms, alkylbenzene sulfonic acid (salt) having 6 or more carbon atoms, alkyl sulfate esters having 6 or more carbon atoms and salts of alkyl sulfate esters having 6 or more carbon atoms.

[0018] For example, one embodiment of the second embodiment (Embodiment 2-1) is an abrasive composition comprising anionic modified silica particles, an oxidizing agent, and water, satisfying (I), (II) or both below, and having a pH of 1.0 or higher and 5.0 or lower, but the second embodiment is not limited to this embodiment: (I) The abrasive composition comprises an alkylphosphonic acid (salt) having 6 to 11 carbon atoms; (II) The abrasive composition comprises at least one compound selected from the group consisting of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms and salts of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms; and at least one compound selected from the group consisting of alkyl sulfonic acid (salt) having 6 or more carbon atoms, alkylbenzene sulfonic acid (salt) having an alkyl group having 6 or more carbon atoms, alkyl sulfate esters having an alkyl group having 6 or more carbon atoms and salts of alkyl sulfate esters having an alkyl group having 6 or more carbon atoms.

[0019] For example, a preferred example of Embodiment 2-1 is an abrasive composition comprising anionically modified silica particles, an alkylphosphonic acid (salt) having 6 to 11 carbon atoms, an oxidizing agent, and water, with a pH of 1.0 to 5.0, but the abrasive composition according to Embodiment 2-1 is not limited thereto. As stated above, the second embodiment is not limited to Embodiment 2-1 described above.

[0020] The polishing compositions according to these embodiments may provide at least one means selected from the group consisting of means that can achieve a high inhibitory effect on the polishing speed of titanium materials, and means that improve the selectivity ratio of tungsten materials to materials other than tungsten materials while achieving a sufficient polishing speed for tungsten materials. Preferably, the polishing compositions according to these embodiments are polishing compositions that can improve the selectivity ratio of tungsten materials to materials other than tungsten materials while achieving a sufficient polishing speed for tungsten materials. More preferably, the polishing compositions according to these embodiments are polishing compositions that can achieve a high inhibitory effect on the polishing speed of titanium materials, and improve the selectivity ratio of tungsten materials to materials other than tungsten materials while achieving a sufficient polishing speed for tungsten materials. Here, the selectivity ratio of tungsten materials to materials other than tungsten materials represents the ratio of the polishing speed of tungsten materials to the polishing speed of materials other than tungsten materials (polishing speed of tungsten materials / polishing speed of materials other than tungsten materials).

[0021] The polishing compositions according to each of the above embodiments are preferably the following polishing compositions. For example, the polishing composition according to one embodiment is preferably able to achieve a sufficient polishing speed for tungsten materials while improving the selectivity ratio of tungsten materials to titanium materials, and / or the selectivity ratio of tungsten materials to materials containing at least one selected from the group consisting of silicon, oxygen, and nitrogen.

[0022] In this specification, a compound that satisfies at least one of the conditions selected from the group consisting of condition (1) and condition (2) above is also referred to as a "compound that satisfies condition (1) and / or condition (2)".

[0023] In this specification, the water-octanol partition coefficient logD at pH of the abrasive composition is also simply referred to as "logD".

[0024] In this specification, the amount of the compound adsorbed onto the quartz crystal microbalance electrode at the pH of the polishing composition is 3 ng / cm² per unit area of ​​the quartz crystal microbalance electrode.２ Compounds that meet the above criteria are also simply referred to as "compounds whose adsorption amount exceeds a specific amount."

[0025] The inventors hypothesize the following mechanism by which at least one of the above problems is solved by the polishing compositions according to each of the above embodiments. When a compound is used that satisfies at least one of the conditions selected from the group consisting of condition (1) and condition (2) above, the compound approaches the surface of the specific material to be polished, adsorbs to the surface, or forms a bond with the surface. Such a compound then orients its hydrophilic or hydrophobic groups toward the side opposite to the object to be polished. Alternatively, when a compound shown in (I) and / or (II) above is used, the compound shown in (I) and / or (II) above adsorbs to the surface of the specific material to be polished, or forms a bond with the surface of the specific material to be polished. The compound shown in (I) and / or (II) above also orients its hydrophilic or hydrophobic groups toward the side opposite to the object to be polished. As a result, the modified abrasive grains become less likely to approach the surface of materials other than the tungsten material to be polished (e.g., titanium material) due to differences in hydrophilicity or hydrophobicity and / or electrostatic repulsion. Furthermore, the frequency of contact between the modified abrasive grains and materials other than the tungsten material being polished (for example, titanium material) decreases. Therefore, the polishing speed of the specific material being polished decreases.

[0026] Furthermore, when using a surfactant with logD greater than 0, since surfactants with logD greater than 0 are more hydrophobic than water (the dispersion medium / slurry dispersant), they will be attracted to the surface of the specific material to be polished, which is more hydrophobic than water, and will adsorb to that surface or form a bond with that surface. The surfactant with logD greater than 0 will then orient its hydrophilic or hydrophobic groups toward the opposite side of the object to be polished. Alternatively, when using the compounds shown in (I) and / or (II) above (for example, alkylphosphonic acid (salt) with 6 to 11 carbon atoms), the compounds shown in (I) and / or (II) above (for example, alkylphosphonic acid (salt) with 6 to 11 carbon atoms) will adsorb to the surface of the specific material to be polished or form a bond with the surface of the specific material to be polished. The compounds shown in (I) and / or (II) above (for example, alkylphosphonic acid (salt) with 6 to 11 carbon atoms) will then orient their hydrophilic or hydrophobic groups toward the opposite side of the object to be polished. As a result, when using anionically modified silica particles and an oxidizing agent, the anionically modified silica particles and the oxidizing agent become less likely to approach the surface of the specific material being polished due to differences in hydrophilicity or hydrophobicity and / or electrostatic repulsion. Consequently, the frequency of contact between the anionically modified silica particles and the specific material being polished decreases, and the frequency of chemical reactions of the specific material being polished by the oxidizing agent decreases. Alternatively, when using silica particles and an oxidizing agent with a cation-modified surface, the cation-modified silica particles and the oxidizing agent become less likely to approach the surface of the specific material being polished due to differences in hydrophilicity or hydrophobicity and / or electrostatic repulsion. Consequently, the frequency of contact between the cation-modified silica particles and the specific material being polished decreases, and the frequency of chemical reactions of the specific material being polished by the oxidizing agent decreases. Therefore, the polishing speed of the specific material being polished decreases. On the other hand, with respect to tungsten material being polished, the hydrophilicity of the tungsten oxide formed when tungsten reacts with an oxidizing agent is very high. For these reasons, adsorption or bonding of surfactants with logD greater than 0 is unlikely to occur with respect to tungsten material.Alternatively, the adsorption or bonding of compounds shown in (I) and / or (II) above (for example, alkylphosphonic acids (salts) with 6 to 11 carbon atoms) to tungsten materials is unlikely to occur. Therefore, a sufficient polishing speed can be achieved with tungsten materials. In this case, for example, when anionically modified silica particles and / or silica particles with a cationically modified surface are used, and the pH of the polishing composition is in the acidic range, for example, 1.0 to 6.0, electrostatic repulsion to the tungsten material may further reduce the adsorption or bonding of surfactants with logD greater than 0, potentially resulting in even higher effectiveness. Furthermore, although the details are unclear, higher effectiveness may be achieved when specific particles are used as silica particles with a cationically modified surface, and / or when the content of the oxidizing agent is within a specific range. In this case, for example, when silica particles with a cationically modified surface are used, and the pH of the polishing composition is in the acidic range, for example, 1.0 to 6.0, the zeta potential of the tungsten material may become negative. In this case, electrostatic repulsion between the tungsten material and the silica particles with cation-modified surfaces is less likely to occur, the frequency of contact between the cation-modified silica particles and the tungsten material increases, and the polishing speed may improve, potentially leading to even greater effectiveness. Therefore, the polishing compositions according to each of the embodiments 1-2 to 1-4 and 2-1 described above can achieve a sufficient polishing speed for tungsten materials while improving the selectivity ratio of tungsten materials to materials other than tungsten materials.

[0027] It should be noted that the above mechanisms are based on speculation, and their accuracy does not affect the technical scope of the present invention.

[0028] For example, in Embodiments 1-2 and 2-1, the inventors have found that by using anionically modified silica particles, a specific surfactant, an oxidizing agent, and water in combination as components of the polishing composition, and by setting the pH of the polishing composition within a specific range, the improvement effect on at least one of the above problems is even better. For example, in Embodiment 1-3, the inventors have found that by using silica particles with a cationically modified surface, a specific surfactant, an oxidizing agent, and water in combination as components of the polishing composition, and by setting the pH of the polishing composition within a specific range, the improvement effect on at least one of the above problems is even better. For example, in Embodiment 1-4, the inventors have found that by using silica particles with a cationically modified surface, a specific surfactant, an oxidizing agent, and water in combination as components of the polishing composition, setting the pH of the polishing composition within a specific range, using specific particles as the silica particles with a cationically modified surface, and setting the content of the oxidizing agent within a specific range, the improvement effect on at least one of the above problems is even better.

[0029] The details of the polishing composition according to the first embodiment and the polishing composition according to the second embodiment will be described below.

[0030] [Modified Abrasive Grains] The polishing compositions according to each of the above embodiments include modified abrasive grains. By using modified abrasive grains, good dispersion stability can be obtained. Modified abrasive grains can be used alone or in combination of two or more types.

[0031] The modified abrasive grains are not particularly limited. Examples of modified abrasive grains include modified silica particles. Examples of modified abrasive grains include anionically modified silica particles and silica particles with a cationically modified surface. These can be used individually or in combination of two or more. For example, the modified abrasive grains preferably include modified silica particles, and more preferably include at least one selected from the group consisting of anionically modified silica particles and silica particles with a cationically modified surface. Examples of anionically modified silica particles include those mentioned in the description below. These can be used individually or in combination of two or more. Examples of cationically modified silica particles include those mentioned in the description below. These can be used individually or in combination of two or more. For example, the modified abrasive grains preferably include at least one selected from the group consisting of anionically modified silica particles and silica particles with a cationically modified surface, and the silica particles with a cationically modified surface preferably include silica particles whose surface has been chemically modified with at least one silane coupling agent selected from the group consisting of silane coupling agents having amino groups and silane coupling agents having quaternary ammonium groups.

[0032] For modified abrasive grains, the particles to be modified (for example, silica particles, etc.) are not particularly limited. For example, silica particles to be surface-modified (hereinafter also referred to as "silica particles before surface modification") are not particularly limited. Examples of particles to be modified (for example, silica particles before surface modification, etc.) include fumed silica, colloidal silica, and the like. The particles to be modified (for example, silica particles before surface modification, etc.) may be used alone or in combination of two or more. The particles to be modified (for example, silica particles before surface modification, etc.) preferably include at least one selected from the group consisting of fumed silica and colloidal silica. There are no particular restrictions on the method for producing colloidal silica. Examples of methods for producing colloidal silica include a sodium silicate method, a sol-gel method, and the like. Any colloidal silica produced by any production method is suitably used as a raw material for the particles to be modified in each of the above embodiments (for example, surface cation-modified silica particles, etc.). However, from the viewpoint that the particles to be modified (for example, silica particles before surface modification, etc.) can be produced with high purity, colloidal silica produced by the sol-gel method is preferred. For example, with respect to anion-modified silica particles described later, the silica particles to be modified may be the particles exemplified above. For example, with respect to silica particles having a cation-modified surface described later, the silica particles before surface modification may be the particles exemplified above.

[0033] For modified abrasive grains, there is no particular restriction on the silanol group density of the particles to be modified (for example, silica particles, etc.). For example, there is no particular restriction on the silanol group density of the particles to be modified (for example, silica particles before surface modification, etc.). The lower limit of the silanol group density of the particles to be modified (for example, silica particles before surface modification, etc.) is 1.00 pieces / nm ２ or more, 1.50 pieces / nm ２ or more, 2.00 pieces / nm ２ or more, or 2.50 pieces / nm ２ or more is preferable. The upper limit of the silanol group density of the particles to be modified (for example, silica particles before surface modification, etc.) is 10.00 pieces / nm ２ or less, 6.00 pieces / nm ２Below, 5.00 pieces / nm ２ Below, 4.00 pieces / nm ２ Below, 3.50 pieces / nm ２ Below, 3.00 pieces / nm ２ The following, or 2.00 pieces / nm ２ The following is preferable: A preferred range for the silanol group density of the particles to be modified (e.g., silica particles before surface modification) is 1.00 group / nm. ２ 10.00 pieces / nm or more ２ Below, 1.00 pieces / nm ２ 3.50 pieces / nm or more ２ Below, 1.00 pieces / nm ２ 3.00 pieces / nm or more ２ Below, 1.50 pieces / nm ２ 6.00 pieces / nm or more ２ Below, 1.50 pieces / nm ２ 3.50 pieces / nm or more ２ Below, 1.50 pieces / nm ２ 3.00 pieces / nm or more ２ Below, 2.00 pieces / nm ２ 5.00 pieces / nm or more ２ Below, 2.00 pieces / nm ２ 3.50 pieces / nm or more ２ Below, 2.00 pieces / nm ２ 3.00 pieces / nm or more ２ Below, 2.00 pieces / nm ２ 4.00 pieces / nm or more ２ Below, 2.00 pieces / nm ２ 3.50 pieces / nm or more ２ Below, 2.00 pieces / nm ２ 3.00 pieces / nm or more ２ Below, 2.50 pieces / nm ２ 3.00 pieces / nm or more ２ Below, 1.00 pieces / nm ２ 2.00 pieces / nm or more ２ Below, 1.50 pieces / nm ２ 2.00 pieces / nm or more ２The following are examples, but the range of silanol group density of the particles to be modified (e.g., silica particles before surface modification) is not limited to these. For example, with regard to anionically modified silica particles described later, the silanol group density of the silica particles to be modified may be within the above range. For example, with regard to silica particles whose surfaces are cationically modified, described later, the silanol group density of the silica particles before surface modification may be within the above range. When the silanol group density of the particles to be modified (e.g., silica particles before surface modification) is within these ranges, it may be possible to improve the polishing speed of the tungsten material by the polishing composition, improve the selectivity ratio of the tungsten material to materials other than tungsten material, or both. The silanol group density of the particles to be modified (e.g., silica particles before surface modification) can be evaluated by the method described in the examples. There are no particular limitations on the method for controlling the silanol group density of the particles to be modified (e.g., silica particles before surface modification). An example of a method for controlling the silanol group density of particles to be modified (e.g., silica particles before surface modification) is hydrothermal treatment of a dispersion containing the particles to be modified (e.g., silica particles before surface modification). The hydrothermal treatment is not particularly limited. An example of hydrothermal treatment is a treatment in which the dispersion containing the particles to be modified (e.g., silica particles before surface modification) is heated at a temperature of, for example, 100°C to 200°C for, for example, 30 to 60 minutes.

[0034] (Anionic Modified Silica Particles) Modified abrasive grains preferably contain anionic modified silica particles. The polishing compositions according to each of the above embodiments preferably contain anionic modified silica particles (also known as anionic modified silica particles). For example, the polishing compositions according to Embodiments 1-2 and 2-1 each contain anionic modified silica particles. By using anionic modified silica particles, sufficient dispersion stability can be obtained under acidic conditions. Anionic modified silica particles can be used alone or in combination of two or more types.

[0035] Anion-modified silica particles are not particularly limited. Examples of anion-modified silica particles include silica particles with organic acids immobilized on their surface. Silica particles with organic acids immobilized on their surface tend to have a larger absolute value of zeta potential in the polishing composition compared to silica particles without immobilized organic acids. Examples of anion-modified silica particles include anion-modified colloidal silica (also known as anion-modified colloidal silica). Examples of anion-modified silica particles include colloidal silica particles with organic acids immobilized on their surface. The organic acid is not particularly limited. Examples of organic acids include carboxylic acids, sulfonic acids, phosphonic acids, etc. The organic acid may be used alone or in combination of two or more types. Examples of silica particles with organic acids immobilized on their surface include silica particles with carboxylic acid groups immobilized on their surface (also known as carboxylic acid-modified silica particles), silica particles with sulfonic acid groups immobilized on their surface (also known as sulfonic acid-modified silica particles), and silica particles with phosphonic acid groups immobilized on their surface (also known as phosphonic acid-modified silica particles). Colloidal silica with organic acids immobilized on its surface is not particularly limited. Examples of colloidal silica with organic acids immobilized on its surface include colloidal silica with carboxylic acid groups immobilized on its surface (also known as carboxylic acid-modified colloidal silica), colloidal silica with sulfonic acid groups immobilized on its surface (also known as sulfonic acid-modified colloidal silica), and colloidal silica with phosphonic acid groups immobilized on its surface (also known as phosphonic acid-modified colloidal silica). Examples of anion-modified silica particles include silica particles with aluminate groups immobilized on the surface (also known as aluminate-modified silica particles) and colloidal silica with aluminate groups immobilized on the surface (also known as aluminate-modified colloidal silica). The particles exemplified as anion-modified silica particles can be used individually or in combination of two or more types. It is preferable that the anion-modified silica particles include at least one selected from the group consisting of the particles exemplified above.The anion-modified silica particles more preferably include at least one selected from the group consisting of carboxylic acid-modified silica particles and sulfonic acid-modified silica particles, even more preferably include sulfonic acid-modified silica particles, and particularly preferably include sulfonic acid-modified colloidal silica. The anion-modified silica particles may also be at least one selected from the group consisting of the particles exemplified above. From the viewpoint of ease of production, the anion-modified silica particles may be at least one particle selected from the group consisting of carboxylic acid-modified silica particles and sulfonic acid-modified silica particles, or they may be sulfonic acid-modified colloidal silica.

[0036] The immobilization of organic acids onto the surface of silica particles cannot be achieved simply by having silica particles and organic acids coexist.

[0037] For example, if one wants to immobilize sulfonic acid, a type of organic acid, on colloidal silica, this can be done by the method described in, for example, “Sulfonic acid-functionalized silica through quantitative oxidation of thiol groups,” Chem. Commun. 246-247 (2003). Specifically, colloidal silica with sulfonic acid groups immobilized on its surface can be obtained by coupling a silane coupling agent having a thiol group, such as 3-mercaptopropyltrimethoxysilane, to colloidal silica, and then oxidizing the thiol group with hydrogen peroxide. For example, if you want to immobilize a carboxylic acid, a type of organic acid, on colloidal silica, you can use the method described in, for example, "Novel Silane Coupling Agents Containing a Photoreactive 2-Nitrobenzyl Ester for Introduction of a Carboxy Group on the Surface of Silica Gel," Chemistry Letters, 3, 228-229 (2000). Specifically, by coupling a silane coupling agent containing a photoreactive 2-nitrobenzyl ester to colloidal silica and then irradiating it with light, you can obtain colloidal silica on which the carboxylic acid group is immobilized on the surface.

[0038] In silica particles with an organic acid immobilized on its surface, the organic acid immobilized on the surface of the silica particles may be in the form of an acid or a salt. For example, in silica particles with a sulfonic acid group immobilized on its surface, the sulfonic acid group immobilized on the surface of the silica particles may be in the form of an acid or a salt.

[0039] (Surface-Cationally Modified Silica Particles) Modified abrasive grains preferably include silica particles whose surfaces are cationically modified. In this specification, surface-cationically modified silica particles are also referred to as "surface-cationically modified silica particles." For example, the polishing compositions according to Embodiments 1-3 above include silica particles whose surfaces are cationically modified. For example, the polishing compositions according to Embodiments 1-4 above include silica particles whose surfaces are chemically modified with at least one silane coupling agent selected from the group consisting of silane coupling agents having amino groups and silane coupling agents having quaternary ammonium groups, as surface-cationically modified silica particles. By using surface-cationically modified silica particles, sufficient dispersion stability can be obtained under acidic conditions. Surface-cationically modified silica particles can be used alone or in combination of two or more types.

[0040] The method for producing surface-cation-modified silica particles is not particularly limited. An example of a method for producing colloidal silica chemically surface-modified with at least one silane coupling agent selected from the group consisting of silane coupling agents having amino groups and silane coupling agents having quaternary ammonium groups is the method described in Japanese Patent Application Publication No. 2005-162533, which involves immobilizing a silane coupling agent having amino groups or a silane coupling agent having quaternary ammonium groups on the surface of silica particles. The silane coupling agent having amino groups is not particularly limited. Examples of silane coupling agents having an amino group include 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane (also known as APTES), 3-aminopropyldimethoxymethylsilane, 3-(2-aminoethylamino)propyltrimethoxysilane, 3-(2-aminoethylamino)propyltriethoxysilane, 3-(2-aminoethylamino)propyldimethoxymethylsilane, 3-aminopropyldimethoxymethylsilane, trimethoxy[3-(methylamino)propyl]silane, trimethoxy[3-(phenylamino)propyl]silane, [3-(N,N-dimethylamino)propyl]trimethoxysilane, [3-(6-aminohexylamino)propyl]trimethoxysilane, N-methyl-3-(triethoxysilyl)propan-1-amine, N-[3-(trimethoxysilyl)propyl]butane-1-amine, and bis[(3-trimethoxysilyl)propyl]amine. Silane coupling agents having a quaternary ammonium group are not particularly limited. Examples of silane coupling agents having a quaternary ammonium group include N-trimethoxysilylpropyl-N,N,N-trimethylammonium. The compounds exemplified as silane coupling agents can be used individually or in combination of two or more. It is preferable that the silane coupling agent contains at least one compound selected from the group consisting of the compounds exemplified above. It is preferable that the silane coupling agent is a silane coupling agent having an amino group, and is particularly preferable to be APTES.

[0041] (Zeta potential of modified abrasive grains) The zeta potential of modified abrasive grains in the polishing composition (preferably anionic modified silica particles or surface cation modified silica particles, particularly preferably anionic modified silica particles) is not particularly limited. The "zeta (ζ) potential" is the potential difference that occurs at the interface between a solid and a liquid when they are in relative motion. For example, the lower limit of the zeta potential of modified abrasive grains in the polishing composition (particularly preferably anionic modified silica particles) is preferably -200 mV or higher, more preferably -150 mV or higher, even more preferably -100 mV or higher, even more preferably -90 mV or higher, and particularly preferably -80 mV or higher. For example, the zeta potential of modified abrasive grains in the polishing composition (particularly preferably anionic modified silica particles) may be, for example, -60 mV or higher. The upper limit of the zeta potential of the modified abrasive grains (particularly preferably anionically modified silica particles) in the polishing composition is preferably -5 mV or less, more preferably -15 mV or less, even more preferably -30 mV or less, even more preferably -50 mV or less, and particularly preferably less than -60 mV. Preferred examples of the zeta potential range of the modified abrasive grains (particularly preferably anionically modified silica particles) in the polishing composition include -200 mV to -5 mV, -150 mV to -15 mV, -100 mV to -30 mV, -90 mV to -50 mV, -80 mV to less than -60 mV, etc., but the zeta potential range of the modified abrasive grains (particularly preferably anionically modified silica particles) in the polishing composition is not limited to these. For example, the lower limit of the zeta potential of modified abrasive particles in the polishing composition (e.g., surface cation-modified silica particles) is preferably 10 mV or higher, 15 mV or higher, 20 mV or higher, or 25 mV or higher. The upper limit of the zeta potential of modified abrasive particles in the polishing composition (e.g., surface cation-modified silica particles) is preferably 60 mV or lower, 40 mV or lower, 35 mV or lower, or 30 mV or lower.For example, preferred ranges for the zeta potential of modified abrasive particles (e.g., surface cation-modified silica particles, etc.) in a polishing composition include 10 mV to 60 mV, 15 mV to 40 mV, 20 mV to 35 mV, 25 mV to 30 mV, etc., but the range of the zeta potential of modified abrasive particles (e.g., surface cation-modified silica particles, etc.) in a polishing composition are not limited to these. Preferred ranges for the zeta potential (upper limit, lower limit, or combination thereof) of silica particles chemically surface-modified with at least one silane coupling agent selected from the group consisting of an amino group-containing silane coupling agent and a quaternary ammonium group-containing silane coupling agent in a polishing composition according to one embodiment include ranges similar to the range of the zeta potential of modified abrasive particles (e.g., surface cation-modified silica particles, etc.) in the polishing composition described above. When the zeta potential of modified abrasive particles in the polishing composition (preferably anionically modified silica particles or surface-cationically modified silica particles, particularly preferably anionically modified silica particles) is within these ranges, at least one of the following may be achieved: the polishing rate of tungsten materials by the polishing composition is improved; the polishing rate of materials other than tungsten materials by the polishing composition is reduced; and the selectivity ratio of tungsten materials to materials other than tungsten materials is improved. The zeta potential of modified abrasive particles in the polishing composition (preferably anionically modified silica particles or surface-cationically modified silica particles, particularly preferably anionically modified silica particles) can be measured by the method described in the examples. The zeta potential of anionically modified silica particles in the polishing composition can be adjusted by the amount of anionic groups (particularly organic acid groups) and / or the pH of the polishing composition. The zeta potential of surface-cationically modified silica particles can be adjusted by the surface modification rate and / or the pH of the polishing composition.

[0042] (Shape of Modified Abrasive Grains) The shape of modified abrasive grains (preferably anionically modified silica particles or surface-cationically modified silica particles, particularly preferably anionically modified silica particles) is not particularly limited and may be spherical or non-spherical. Examples of non-spherical shapes include polygonal prismatic shapes, cylindrical shapes, cylindrical shapes with a bulge in the center than at the ends, donut shapes with a through-hole in the center of the disc, plate shapes, so-called cocoon shapes with a constriction in the center, so-called aggregate spherical shapes where multiple particles are integrated, so-called konpeito shapes with multiple protrusions on the surface, rugby ball shapes, etc., but non-spherical shapes are not limited to these. Examples of polygonal prismatic shapes include triangular prisms and square prisms, but polygonal prismatic shapes are not limited to these. A preferred example of the shape of silica particles chemically surface-modified with at least one silane coupling agent selected from the group consisting of a silane coupling agent having an amino group and a silane coupling agent having a quaternary ammonium group according to one embodiment is the same as the example of the shape of modified abrasive grains described above.

[0043] (Average primary particle diameter of modified abrasive grains) The average primary particle diameter of modified abrasive grains (preferably anionic modified silica particles or surface cation modified silica particles, particularly preferably anionic modified silica particles) is not particularly limited. The lower limit of the average primary particle diameter of modified abrasive grains (preferably anionic modified silica particles or surface cation modified silica particles, particularly preferably anionic modified silica particles) is preferably 5 nm or more, more preferably 8 nm or more, even more preferably 10 nm or more, and particularly preferably 12 nm or more. The upper limit of the average primary particle diameter of modified abrasive grains (preferably anionic modified silica particles or surface cation modified silica particles, particularly preferably anionic modified silica particles) is preferably 100 nm or less, more preferably 80 nm or less, even more preferably 60 nm or less, even more preferably 50 nm or less, even more preferably 30 nm or less, and particularly preferably 20 nm or less. Preferred ranges for the average primary particle diameter of modified abrasive grains (preferably anionically modified silica particles or surface-cationically modified silica particles, particularly preferably anionically modified silica particles) include 5 nm to 100 nm, 8 nm to 80 nm, 10 nm to 60 nm, 12 nm to 50 nm, 12 nm to 30 nm, 12 nm to 20 nm, 10 nm to 50 nm, 10 nm to 30 nm, 10 nm to 20 nm, 8 nm to 50 nm, 8 nm to 30 nm, 8 nm to 20 nm, 5 nm to 50 nm, 5 nm to 30 nm, 5 nm to 20 nm, etc. However, the range of the average primary particle diameter of modified abrasive grains (preferably anionically modified silica particles or surface-cationically modified silica particles, particularly preferably anionically modified silica particles) is not limited to these. A preferred example of the range of average primary particle diameter (upper limit, lower limit, or a combination thereof) of silica particles chemically surface-modified with at least one silane coupling agent selected from the group consisting of a silane coupling agent having an amino group and a silane coupling agent having a quaternary ammonium group according to one embodiment is the same range as the range of average primary particle diameter of the modified abrasive grains described above.The average primary particle diameter of modified abrasive particles (preferably anionically modified silica particles or surface-cationically modified silica particles, particularly preferably anionically modified silica particles) can be calculated, for example, based on the specific surface area of ​​the anionically modified silica particles calculated by the BET method, assuming that the shape of the anionically modified silica particles is perfectly spherical. The average primary particle diameter of modified abrasive particles (preferably anionically modified silica particles or surface-cationically modified silica particles, particularly preferably anionically modified silica particles) can be appropriately controlled by selecting a method for manufacturing the silica particles to be anionically modified, etc.

[0044] (Average secondary particle diameter of modified abrasive grains) The average secondary particle diameter of modified abrasive grains (preferably anionic modified silica particles or surface cation modified silica particles, particularly preferably anionic modified silica particles) is not particularly limited. The lower limit of the average secondary particle diameter of modified abrasive grains (preferably anionic modified silica particles or surface cation modified silica particles, particularly preferably anionic modified silica particles) is preferably 10 nm or more, more preferably 15 nm or more, even more preferably 20 nm or more, and particularly preferably 25 nm or more. The lower limit of the average secondary particle diameter of modified abrasive grains (preferably anionic modified silica particles or surface cation modified silica particles, particularly preferably anionic modified silica particles) may be greater than 30 nm, greater than 40 nm, or greater than 60 nm. As the average secondary particle diameter of modified abrasive grains (preferably anionic modified silica particles or surface cation modified silica particles, particularly preferably anionic modified silica particles) increases, the polishing speed of the tungsten material by the polishing composition may improve. The upper limit of the average secondary particle diameter of the modified abrasive grains (preferably anionically modified silica particles or surface cation-modified silica particles, particularly preferably anionically modified silica particles) is preferably 400 nm or less, more preferably 300 nm or less, even more preferably 200 nm or less, even more preferably 100 nm or less, even more preferably 60 nm or less, and particularly preferably 40 nm or less. The upper limit of the average secondary particle diameter of the modified abrasive grains (preferably anionically modified silica particles or surface cation-modified silica particles, particularly preferably anionically modified silica particles) may be 30 nm or less. As the average secondary particle diameter of the modified abrasive grains (preferably anionically modified silica particles or surface cation-modified silica particles, particularly preferably anionically modified silica particles) decreases, it may be possible to achieve a lower polishing rate of materials other than tungsten by the polishing composition, an improved selectivity ratio of tungsten material to materials other than tungsten material, or both.Preferred examples of the average secondary particle diameter range of the modified abrasive grains (preferably anionic modified silica particles or surface cation modified silica particles, particularly preferably anionic modified silica particles) include: 10 nm to 400 nm, 15 nm to 300 nm, 20 nm to 200 nm, 25 nm to 100 nm, 25 nm to 60 nm, 25 nm to 40 nm, 25 nm to 30 nm, 10 nm to 100 nm, 10 nm to 60 nm, and 10 nm to 40 nm. Examples of average secondary particle diameters include m or less, 10 nm to 30 nm, 15 nm to 100 nm, 15 nm to 60 nm, 15 nm to 40 nm, 15 nm to 30 nm, 20 nm to 100 nm, 20 nm to 60 nm, 20 nm to 40 nm, 20 nm to 30 nm, etc., but the range of average secondary particle diameter of modified abrasive grains (preferably anionically modified silica particles or surface cationically modified silica particles, particularly preferably anionically modified silica particles) is not limited to these. Preferred examples of the range of average secondary particle diameter (upper limit, lower limit, or combination thereof) of silica particles chemically surface-modified with at least one silane coupling agent selected from the group consisting of silane coupling agents having amino groups and silane coupling agents having quaternary ammonium groups in the polishing composition according to one embodiment include the same range as the range of average secondary particle diameter of modified abrasive grains in the polishing composition described above. The average secondary particle diameter of modified abrasive particles in an abrasive composition (preferably anionically modified silica particles or surface cation-modified silica particles, particularly preferably anionically modified silica particles) can be measured as the volume-averaged particle diameter (volume-based arithmetic mean diameter; Mv) using a dynamic light scattering particle size distribution device. Details of the measurement method are described in the examples. The average secondary particle diameter of modified abrasive particles (preferably anionically modified silica particles or surface cation-modified silica particles, particularly preferably anionically modified silica particles) can be appropriately controlled by selecting a method for manufacturing the modified abrasive particles. For example, in the case of anionically modified silica particles, it can be appropriately controlled by selecting a method for manufacturing the silica particles to be anionically modified. For example, in the case of surface cation-modified silica particles, it can be appropriately controlled by selecting a method for manufacturing the silica particles before surface modification.

[0045] (Aspect Ratio of Modified Abrasive Grains) The average aspect ratio of modified abrasive grains (e.g., surface cation-modified silica particles) is not particularly limited. The lower limit of the average aspect ratio of modified abrasive grains (e.g., surface cation-modified silica particles) is preferably greater than 1.00, 1.05 or greater, 1.10 or greater, or greater than 1.20. The upper limit of the average aspect ratio of modified abrasive grains (e.g., surface cation-modified silica particles) is preferably 2.00 or less, 1.50 or less, 1.30 or less, 1.25 or less, or 1.20 or less. Preferred ranges for the average aspect ratio of modified abrasive grains (e.g., surface cation-modified silica particles) include greater than 1.00 and less than or equal to 2.00, 1.05 to less than or equal to 1.50, 1.10 to less than or equal to 1.30, 1.10 to less than or equal to 1.25, and 1.10 to less than or equal to 1.20, but the range of the average aspect ratio of modified abrasive grains (e.g., surface cation-modified silica particles) is not limited to these. When the average aspect ratio of modified abrasive grains (e.g., surface cation-modified silica particles) is within these ranges, it may be possible to improve the polishing speed of tungsten materials by the polishing composition, improve the selectivity ratio of tungsten materials to materials other than tungsten materials, or both. A preferred example of the range (upper limit, lower limit, or a combination thereof) of the average aspect ratio of silica particles chemically surface-modified with at least one silane coupling agent selected from the group consisting of silane coupling agents having amino groups and silane coupling agents having quaternary ammonium groups in the polishing composition according to one embodiment is a range similar to the range of the average aspect ratio of modified abrasive grains in the polishing composition described above. In this specification, the aspect ratio of a particle means the value obtained by measuring the values ​​of the long side and short side of the smallest rectangle circumscribing the secondary particle and calculating the ratio of the long side value to the short side value (long side value / short side value). In this specification, the average aspect ratio of modified abrasive grains (e.g., surface cation-modified silica particles) is the value obtained by calculating the average of the aspect ratios of a predetermined number (e.g., 100 to 1000) of modified abrasive grains (e.g., surface cation-modified silica particles).The average aspect ratio of modified abrasive grains (e.g., surface cation-modified silica particles) can be determined, for example, by scanning electron microscopy (SEM) observation. More specifically, the average aspect ratio of modified abrasive grains (e.g., surface cation-modified silica particles) can be measured and calculated by the method described in the examples. The average aspect ratio of modified abrasive grains can be appropriately controlled by selecting the manufacturing method of the abrasive grains before modification. For example, the average aspect ratio of surface cation-modified silica particles can be appropriately controlled by selecting the manufacturing method of the silica particles before surface modification.

[0046] (Content of Modified Abrasive Grains) The content of modified abrasive grains (preferably anionic modified silica particles or surface cation modified silica particles, particularly preferably anionic modified silica particles) in the polishing composition is not particularly limited. The lower limit of the content of modified abrasive grains (preferably anionic modified silica particles or surface cation modified silica particles, particularly preferably anionic modified silica particles) in the polishing composition is preferably 0.1% by mass or more, more preferably 0.3% by mass or more, and even more preferably 0.5% by mass or more, based on the total mass of the polishing composition. If the content of modified abrasive grains (preferably anionic modified silica particles or surface cation modified silica particles, particularly preferably anionic modified silica particles) is within these ranges, it may be easier to obtain a high polishing rate for tungsten material with the polishing composition. The lower limit of the content of modified abrasive grains (preferably anionic modified silica particles or surface cation modified silica particles, particularly preferably anionic modified silica particles) in the polishing composition may be 1% by mass or more, 1.5% by mass or more, 3% by mass or more, or 5% by mass or more, based on the total mass of the polishing composition. The upper limit of the content of modified abrasive particles (preferably anionic modified silica particles or surface cation modified silica particles, particularly preferably anionic modified silica particles) in the polishing composition is preferably 20% by mass or less, more preferably 15% by mass or less, even more preferably 10% by mass or less, even more preferably 8% by mass or less, even more preferably 5% by mass or less, even more preferably 3% by mass or less, even more preferably 2% by mass or less, even more preferably 1% by mass or less, even more preferably less than 1% by mass, and particularly preferably 0.9% by mass or less, based on the total mass of the polishing composition. For example, the upper limit of the content of modified abrasive particles (preferably anionic modified silica particles or surface cation modified silica particles, particularly preferably anionic modified silica particles) in the polishing composition may be 1.0% by mass or less, or even 0.8% by mass or less, based on the total mass of the polishing composition.If the content of modified abrasive particles (preferably anionically modified silica particles or surface cationally modified silica particles, particularly preferably anionically modified silica particles) is within these ranges, the polishing speed of materials other than tungsten by the polishing composition may be lower, the selectivity ratio of tungsten material to materials other than tungsten material may be improved, or both may be achieved. For example, when the object to be polished includes a tungsten material portion and a portion including the above portion 2, if the upper limit of the content of modified abrasive particles (preferably anionically modified silica particles or surface cationally modified silica particles, particularly preferably anionically modified silica particles) in the polishing composition is 8% by mass or less of the total mass of the polishing composition, the selectivity ratio of the tungsten material portion to the above portion 2 may be further improved. In particular, when the object to be polished includes a tungsten material portion and a portion including the above-mentioned portion 2, if the upper limit of the content of modified abrasive particles (preferably anionically modified silica particles or surface cationally modified silica particles, particularly preferably anionically modified silica particles) in the polishing composition is 1% by mass or less (for example, less than 1% by mass) of the total mass of the polishing composition, the selectivity ratio of the tungsten material portion to the above-mentioned portion 2 may be significantly improved.Preferred examples of the range of content of modified abrasive particles (preferably anionic modified silica particles or surface cation modified silica particles, particularly preferably anionic modified silica particles) in the abrasive composition are, with respect to the total mass of the abrasive composition: 0.1% to 20% by mass, 0.3% to 15% by mass, 0.5% to 10% by mass, 0.5% to 8% by mass, 0.5% to 5% by mass, 0.5% to less than 3% by mass, 0.5% to 1% by mass, 0.5% to less than 1% by mass, 0.5% to 0.9% by mass, 0.1% to 10% by mass, 0.1% to 8% by mass, and 0.1% by mass. Examples include amounts of % by mass or more and 5% by mass or less, 0.1% by mass or more and less than 3% by mass, 0.1% by mass or more and less than 1% by mass, 0.1% by mass or more and less than 1% by mass, 0.1% by mass or more and 0.9% by mass or less, 0.3% by mass or more and 10% by mass or less, 0.3% by mass or more and 8% by mass or less, 0.3% by mass or more and 5% by mass or less, 0.3% by mass or more and less than 3% by mass, 0.3% by mass or more and less than 1% by mass, 0.3% by mass or more and less than 1% by mass, 0.1% by mass or more and 0.9% by mass or less, but the range of content of modified abrasive particles (preferably anionic modified silica particles or surface cation modified silica particles, particularly preferably anionic modified silica particles) in the polishing composition is not limited to these. For example, preferred ranges for the content of modified abrasive particles (preferably anionically modified silica particles or surface cation-modified silica particles, particularly preferably anionically modified silica particles) include 1% to 3% by mass, 1.5% to 2% by mass, 0.1% to 1.0% by mass, 0.1% to 0.8% by mass, 0.3% to 1.0% by mass, 0.3% to 0.8% by mass, 0.5% to 1.0% by mass, 0.5% to 0.8% by mass, etc. However, the range of content of modified abrasive particles (preferably anionically modified silica particles or surface cation-modified silica particles, particularly preferably anionically modified silica particles) in the polishing composition is not limited to these.When two or more modified abrasive particles (preferably anionically modified silica particles or surface-cationically modified silica particles, particularly preferably anionically modified silica particles) are used, the content of the modified abrasive particles (preferably anionically modified silica particles or surface-cationically modified silica particles, particularly preferably anionically modified silica particles) represents the total amount of these particles. For example, a preferred range (upper limit, lower limit, or combination thereof) for the content of silica particles chemically surface-modified by at least one silane coupling agent selected from the group consisting of silane coupling agents having amino groups and silane coupling agents having quaternary ammonium groups in the polishing composition is a range similar to that of the content of modified abrasive particles in the polishing composition described above.

[0047] [Compounds satisfying at least one of the conditions selected from the group consisting of the above conditions (1) and (2)] The polishing composition according to the first embodiment contains a compound that satisfies at least one of the conditions selected from the group consisting of the above conditions (1) and (2) (a compound that satisfies condition (1) and / or condition (2)). The compound that satisfies condition (1) and / or condition (2) preferably satisfies condition (1), and preferably satisfies condition (1) and condition (2). The compound that satisfies condition (1) and / or condition (2) may also satisfy condition (2). The compound that satisfies condition (1) and / or condition (2) can be used individually or in combination of two or more.

[0048] Compounds that satisfy condition (1) and / or condition (2) are not particularly limited. Below are examples of surfactants whose water-octanol partition coefficient logD at the pH of the polishing composition is greater than 0, and the amount of adsorption (of the compound) to the quartz crystal microbalance electrode at the pH of the polishing composition is 3 ng / cm² per unit area of ​​the quartz crystal microbalance electrode. ２Examples of such compounds are described above. However, these descriptions can also be considered examples of the structures of compounds that satisfy condition (1) and / or condition (2), and / or examples of the types of compounds that satisfy condition (1) and / or condition (2). It is preferable that compounds that satisfy condition (1) and / or condition (2) are not polymers containing sulfonic acid (salt) groups.

[0049] (Surfactants with a water-octanol partition coefficient logD greater than 0 at the pH of the polishing composition) In the polishing composition according to the first embodiment, a compound that satisfies condition (1) and / or condition (2) is preferably one that satisfies condition (1). A compound that satisfies condition (1) and / or condition (2) is preferably one that satisfies condition (1). The polishing composition according to the first embodiment is preferably one that contains a surfactant with a water-octanol partition coefficient logD greater than 0 at the pH of the polishing composition. A surfactant with logD greater than 0 acts to significantly reduce the polishing rate of at least one material other than tungsten material. A surfactant with logD greater than 0 can be used alone or in combination of two or more.

[0050] logD is a common logarithm, and its base is 10.

[0051] In this specification, methods for measuring and / or calculating the water-octanol partition coefficient logD include, for example, direct measurement methods, indirect measurement methods, and computational chemistry calculation methods, as described in the Japan Technical Information Association, "Partition Coefficient" Structural Determination and Measurement / Analysis of Physical Properties and Establishment of Standard Test Methods, Japan Technical Information Association, pp. 130-142 (2001). However, considering the characteristics of each method, an appropriate method should be selected as appropriate depending on the purpose and circumstances.

[0052] When the water-octanol partition coefficient logD is determined by a direct measurement method, logD is defined by the following formula (F1).

[0053] logD=log((C ｉ　ｏｃｔ +C ｕ　ｏｃｔ ) / (C ｉ　ｗａｔ +C ｕ　ｗａｔ )) ...Formula (F1) In the above formula (F1), Cｉ　ｏｃｔ This is the total concentration of ionized chemical species in octanol, and C ｕ　ｏｃｔ This is the total concentration of unionized chemical species in octanol, and C ｉ　ｗａｔ C is the total concentration of ionized chemical species in an aqueous solution at a specific pH. ｕ　ｗａｔ This is the total concentration of non-ionized chemical species in an aqueous solution at a specific pH.

[0054] Furthermore, when predicting the behavior of a drug experimentally, the apparent partition coefficient is an important parameter, and it is necessary to measure the partition coefficient. Therefore, as a simple measurement and calculation method that does not require actual measurement, a computational chemistry method can be cited as a preferred method. Specifically, a calculation method using chemical calculation software such as Solubility Batch from Advanced Chemistry Development (ACD) can be cited. Information on the algorithm used in this calculation method can be found on ACD's website (www.acdlabs.com). Note that the water-octanol partition coefficient logD calculated by this method is already included in the CAS REGISTRY file and can be used. The water-octanol partition coefficient logD can be calculated using, for example, chemical calculation software such as ACD / LogD from Advanced Chemistry Development (ACD).

[0055] The logD of the surfactant is not particularly limited. The logD of the surfactant is preferably within the following range.

[0056] For example, the lower limit of logD for a surfactant is preferably greater than 0, more preferably 0.5 or greater, even more preferably 1.0 or greater, even more preferably 1.5 or greater, even more preferably 2.0 or greater, and particularly preferably 2.1 or greater. For example, the lower limit of logD for a surfactant may be 2.6 or greater, 3.0 or greater, or 4.0 or greater. The upper limit of logD for a surfactant is not particularly limited, but is preferably 5.0 or less, more preferably 4.0 or less, even more preferably 3.5 or less, even more preferably 3.0 or less, even more preferably less than 2.5, even more preferably 2.3 or less, and particularly preferably 2.2 or less. For example, the upper limit of logD for a surfactant may be less than 1.5. Preferred ranges for the logD of the surfactant include greater than 0 and 5.0 or less, greater than 0 and 4.0 or less, greater than 0 and 3.5 or less, 0.5 or more and 4.0 or less, 0.5 or more and 3.5 or less, 0.5 or more and 3.0 or less, 0.5 or more and 2.5 or less, 1.0 or more and 3.5 or less, 1.0 or more and 3.0 or less, 1.5 or more and 3.0 or less, 2.0 or more and 3.0 or less, 2.0 or more and less than 2.5, 2.1 or more and 2.3 or less, 2.1 or more and 2.2 or less, 2.6 or more and 5.0 or less, 3.0 or more and 5.0 or less, 3.5 or more and 5.0 or less, 4.0 or more and 5.0 or less, greater than 0 and less than 1.5, 0.5 or more and less than 1.5, 1.0 or more and less than 1.5, etc., but the range of the logD of the surfactant is not limited to these. For example, in the polishing composition of Embodiment 1-2, it is preferable that the logD of the surfactant is within the above range. For example, in the polishing composition of Embodiment 2-1, it is preferable that the logD of the surfactant is within the above range.

[0057] For example, the lower limit of the logD of the surfactant is preferably greater than 0, 0.40 or more, 1.00 or more, 1.50 or more, 1.60 or more, 1.70 or more, 2.05 or more, or 2.10 or more. For example, the upper limit of the logD of the surfactant is preferably 5.00 or less, 4.00 or less, 3.00 or less, less than 2.50, 2.25 or less, or 2.20 or less. For example, preferred ranges for the logD of a surfactant include greater than 0 and 5.00 or less, greater than 0 and 4.00 or less, greater than 0 and 3.00 or less, greater than 0 and less than 2.50, greater than 0 and 2.25 or less, 0.4 or more and 5.00 or less, 0.4 or more and 4.00 or less, 0.4 or more and 3.00 or less, 0.4 or more and less than 2.50, 0.4 or more and 2.25 or less, 1.00 or more and 4.00 or less, 1.50 or more and 3.00 or less, 1.60 or more and less than 2.50, 1.70 or more and less than 2.50, 2.05 or more and less than 2.50, 2.10 or more and 2.25 or less, 2.10 or more and 2.20 or less, etc., but the range of the logD of a surfactant is not limited to these. For example, in the polishing composition of Embodiment 1-3, it is preferable that the logD of the surfactant is within the above range. For example, in the polishing composition of Embodiment 1-4, it is preferable that the logD of the surfactant is within the above range.

[0058] When the logD of the surfactant is within these ranges, it may be possible to achieve a lower polishing rate for materials other than tungsten by the abrasive composition, an improved selectivity ratio of tungsten material to materials other than tungsten material, or both. It is particularly preferable that the value calculated using ACD / LogD, a chemical calculation software from Advanced Chemistry Development (ACD), is within the above range.

[0059] Surfactants with a logD greater than 0 are not particularly limited. Examples of surfactants with a logD greater than 0 include compounds containing alkyl groups and compounds containing at least one selected from the group consisting of phosphorus (P) and sulfur (S). Preferred examples of surfactants with a logD greater than 0 include compounds containing alkyl groups and at least one selected from the group consisting of phosphorus and sulfur. These compounds can be used individually or in combination of two or more. Surfactants with a logD greater than 0 preferably contain at least one compound selected from the group consisting of the compounds exemplified above, and more preferably contain compounds containing alkyl groups and at least one selected from the group consisting of phosphorus and sulfur. Surfactants with a logD greater than 0 may contain compounds containing alkyl groups and phosphorus, and compounds containing alkyl groups and sulfur. When a surfactant with a logD greater than 0 contains compounds containing alkyl groups and phosphorus, and compounds containing alkyl groups and sulfur, the solubility of the surfactant with a logD greater than 0 may be improved. In this case, a large amount of surfactant with a logD greater than 0 can be included in the abrasive composition. This is because, in the presence of compounds containing alkyl groups and sulfur, the solubility of compounds containing alkyl groups and phosphorus is improved, thereby increasing the amount of soluble compounds containing alkyl groups and phosphorus in the polishing composition. As a result, the ratio of the polishing rate of tungsten material to the polishing rate of titanium material may be improved. In this case, the effect of improving the ratio of the polishing rate of tungsten to the polishing rate of silicon nitride is particularly easy to obtain.

[0060] When a compound that corresponds to a surfactant with logD greater than 0 contains an alkyl group, the alkyl group is not particularly limited. Preferred examples of alkyl groups include linear alkyl groups (linear or branched alkyl groups; the same applies hereinafter herein). Examples of linear alkyl groups include linear alkyl groups and branched alkyl groups. More preferred examples of alkyl groups include linear alkyl groups. The alkyl group preferably contains a linear alkyl group, and more preferably contains a linear alkyl group. The number of carbon atoms in the alkyl group (preferably the number of carbon atoms in a linear alkyl group, more preferably the number of carbon atoms in a linear alkyl group; the same applies hereinafter in this paragraph) is not particularly limited. The upper limit of the number of carbon atoms in the alkyl group is preferably 14 or less, more preferably 12 or less, even more preferably 11 or less, even more preferably 10 or less, and even more preferably 9 or less. The upper limit of the number of carbon atoms in the alkyl group may be 8 or less, 7 or less, or 6 or less. The lower limit of the number of carbon atoms in the alkyl group is preferably 6 or more, more preferably 7 or more, and even more preferably 8 or more. The lower limit of the number of carbon atoms in the alkyl group may be 9 or more, 10 or more, 11 or more, or 12 or more. Preferred ranges for the number of carbon atoms in the alkyl group include 6 to 14, 6 to 12, 6 to 11, 6 to 10, 6 to 9, 6 to 8, 7 to 12, 7 to 11, 7 to 10, 7 to 9, 7 to 8, 8 to 12, 8 to 11, 8 to 10, 8 to 9, etc., but the range of carbon atoms in the alkyl group is not limited to these. The number of carbon atoms in the alkyl group may be 6, 7, 8, 9, 10, 11, or 12. The number of carbon atoms in the alkyl group is preferably 8 or 9, and particularly preferably 8. When the number of carbon atoms in the alkyl group is within these ranges, it may be possible to further improve the polishing speed of the tungsten material by the polishing composition, improve the selectivity ratio of the tungsten material to materials other than tungsten material, or both.Preferred examples of alkyl groups include n-hexyl group, n-heptyl group, n-octyl group, n-nonyl group, n-decyl group, n-undecyl group, n-dodecyl group, n-tridecyl group, and n-tetradecyl group, but alkyl groups are not limited to these. More preferred examples of alkyl groups include n-hexyl group, n-heptyl group, n-octyl group, n-nonyl group, n-decyl group, n-undecyl group, and n-dodecyl group. Even more preferred examples of alkyl groups include n-hexyl group, n-heptyl group, n-octyl group, n-nonyl group, n-decyl group, and n-undecyl group. Even more preferred examples of alkyl groups include n-heptyl group, n-octyl group, n-nonyl group, n-decyl group, and n-undecyl group. Further preferred examples of alkyl groups include n-heptyl, n-octyl, n-nonyl, and n-decyl groups. Further preferred examples of alkyl groups include n-heptyl and n-octyl groups. Particularly preferred examples of alkyl groups include n-octyl groups. Alkyl groups can be used individually or in combination of two or more. It is preferable that the alkyl group contains at least one group selected from the group consisting of the alkyl groups exemplified above. In one embodiment, the alkyl group compound, which is a surfactant with logD greater than 0, preferably further contains at least one selected from the group consisting of phosphorus and sulfur.

[0061] In this specification, with respect to surfactants with logD greater than 0, the acid (salt) group may be an acid group or a salt group of an acid. For example, the phosphonic acid (salt) group may be a phosphonic acid group or a salt group of a phosphonic acid. In this specification, with respect to surfactants with logD greater than 0, the acid (salt) may be an acid or a salt of an acid. For example, alkylphosphonic acid (salt) may be an alkylphosphonic acid or an alkylphosphonate salt. For example, alkylphosphonic acid (salt) having X carbon atoms means that the alkylphosphonic acid has X carbon atoms (number of carbon atoms in the alkyl group), and that the alkylphosphonic acid may be in an acidic state or a salt state. Here, X represents an integer of 1 or more. For example, an alkylphosphonic acid (salt) having 6 to 11 carbon atoms may be an alkylphosphonic acid having 6 to 11 carbon atoms, or a salt of an alkylphosphonic acid having 6 to 11 carbon atoms (i.e., the alkylphosphonic acid has 6 to 11 carbon atoms, and the alkylphosphonic acid may be in an acidic state or in a salt state). For example, an n-octylphosphonic acid (salt) may be an n-octylphosphonic acid, or an n-octylphosphonate salt. For example, an alkylsulfonic acid (salt) having Y carbon atoms may be an alkylsulfonic acid (number of carbon atoms in the alkyl group), and the alkylsulfonic acid may be in an acidic state or in a salt state. Here, Y represents an integer of 1 or more. For example, "alkyl sulfonic acid (salt) having 6 or more carbon atoms" means that it may be an alkyl sulfonic acid having 6 or more carbon atoms, or a salt of an alkyl sulfonic acid having 6 or more carbon atoms (i.e., the alkyl sulfonic acid has 6 or more carbon atoms, and the alkyl sulfonic acid may be in an acidic state or in a salt state).

[0062] When a compound that is a surfactant with logD greater than 0 contains phosphorus (P), it is preferable that phosphorus is included as at least one group selected from the group consisting of phosphonic acid (salt) groups and phosphoric acid (salt) groups, more preferably as a phosphonic acid (salt) group, and particularly preferably as a phosphonic acid group. When a compound that is a surfactant with logD greater than 0 contains sulfur (S), it is preferable that sulfur is included as at least one group selected from the group consisting of sulfate (salt) groups and sulfonic acid (salt) groups. In the description of compounds that are surfactants with logD greater than 0 in this specification, sulfate groups (also known as sulfate ester groups) are referred to as "*-OSO ３ The group represented by "H" is represented by "*-SO" and the sulfonic acid group is represented by "*-SO" ３ The group represented by "H" is represented by "*-PO" ３ H ２ The group represented by " is the phosphate group (also known as the phosphate ester group), and "(*-O)" represents the phosphate group (also known as the phosphate ester group). ｎ PO(OH) ３－ｎ This represents a group represented by (where n = 1 or 2). The phosphate group (also known as the phosphate ester group) is represented by "*-OPO ３ H ２It is preferable that the group is represented by ". Here, * represents the bond position with an adjacent carbon atom. In one embodiment, the surfactant with logD greater than 0 is not particularly limited, but it is preferable that it includes a compound containing at least one selected from the group consisting of phosphorus and sulfur, and more preferably that it includes a compound containing phosphorus. In one embodiment, the surfactant with logD greater than 0 is preferably a compound containing at least one group selected from the group consisting of sulfate (salt) group, sulfonic acid (salt) group, phosphonic acid (salt) group and phosphate (salt) group, more preferably a compound containing at least one group selected from the group consisting of phosphonic acid (salt) group and phosphate (salt) group, and even more preferably a compound containing a phosphonic acid (salt) group. In one embodiment, the surfactant with logD greater than 0 is preferably a compound containing at least one group selected from the group consisting of sulfate group, sulfonic acid group, phosphonic acid group and phosphate group, more preferably a compound containing at least one group selected from the group consisting of phosphonic acid group and phosphate group, and even more preferably a compound containing a phosphonic acid group. In one embodiment, the surfactant with logD greater than 0 may be a compound containing at least one selected from the group consisting of phosphorus and sulfur, or it may be a compound containing phosphorus. In one embodiment, the surfactant with logD greater than 0 may be a compound containing at least one group selected from the group consisting of sulfate (salt) group, sulfonic acid (salt) group, phosphonic acid (salt) group and phosphate (salt) group, or it may be a compound containing at least one group selected from the group consisting of phosphonic acid (salt) group and phosphate (salt) group, or it may be a compound containing a phosphonic acid (salt) group. In one embodiment, the surfactant with logD greater than 0 may be a compound containing at least one group selected from the group consisting of sulfate group, sulfonic acid group, phosphonic acid group and phosphate group, or it may be a compound containing at least one group selected from the group consisting of phosphonic acid group and phosphate group, or it may be a compound containing a phosphonic acid group.When these compounds are used as surfactants with logD greater than 0, the polishing speed of the tungsten material by the polishing composition may be further improved, the selectivity ratio of the tungsten material to materials other than tungsten material may be improved, or both may be achieved. These compounds preferably further contain alkyl groups (preferably the alkyl groups exemplified above).

[0063] Preferred examples of surfactants with logD greater than 0 include compounds containing the alkyl group exemplified above and at least one selected from the group consisting of phosphorus (P) and sulfur (S). More preferred examples of surfactants with logD greater than 0 include compounds containing the alkyl group exemplified above and at least one group selected from the group consisting of sulfate (salt) group, sulfonic acid (salt) group, phosphonic acid (salt) group and phosphoric acid (salt) group. Even more preferred examples of surfactants with logD greater than 0 include compounds containing the alkyl group exemplified above and at least one group selected from the group consisting of sulfate group, sulfonic acid group, phosphonic acid group and phosphoric acid group. Preferred examples of surfactants with logD greater than 0 also include alkyl sulfate esters, salts of alkyl sulfate esters, alkyl sulfonic acid (salt), alkylbenzene sulfonic acid (salt), alkyl phosphonic acid (salt), alkyl phosphate esters, salts of alkyl phosphate esters, (poly)oxyalkylene alkyl ether phosphate esters, and salts of (poly)oxyalkylene alkyl ether phosphate esters.

[0064] In this specification, alkyl sulfate esters are defined as R-OSO ３ A compound having a structure represented by H and where R is an alkyl group is represented. Furthermore, alkyl phosphate esters are (RO) ｎ PO(OH) ３－ｎ This represents a compound having the structure shown, where n=1 or 2, and R is an alkyl group. And (poly)oxyalkylene alkyl ether phosphate ester is (RO-(AO) ｍ ) ｎ -PO(OH) ３－ｎThis represents a compound having the structure shown, where n = 1 or 2, R is an alkyl group, AO is an oxyalkylene group, and m is an integer of 1 or more.

[0065] Preferred examples of surfactants with logD greater than 0 that contain an alkyl group and a sulfate (salt) group include compounds containing an alkyl group having 6 or more carbon atoms and a sulfate (salt) group. Preferred examples of compounds containing an alkyl group and a sulfate (salt) group include alkyl sulfate esters having an alkyl group having 6 or more carbon atoms, and salts of alkyl sulfate esters having an alkyl group having 6 or more carbon atoms. More preferred examples of compounds containing an alkyl group and a sulfate (salt) group include alkyl sulfate esters having an alkyl group having 6 to 12 carbon atoms, and salts of alkyl sulfate esters having an alkyl group having 6 to 12 carbon atoms. Even more preferred examples of compounds containing an alkyl group and a sulfate (salt) group include alkyl sulfate esters having an alkyl group having 6 to 11 carbon atoms, and salts of alkyl sulfate esters having an alkyl group having 6 to 11 carbon atoms. The alkyl group in these alkyl sulfate esters is preferably a chain-like alkyl group, and more preferably a linear alkyl group. The alkyl group in these alkyl sulfate ester salts is preferably a chain-like alkyl group, and more preferably a linear alkyl group.

[0066] A preferred example of a surfactant containing an alkyl group and a sulfonic acid (salt) group, which has logD greater than 0, is a compound containing an alkyl group having 6 or more carbon atoms and a sulfonic acid (salt) group. A more preferred example of a compound containing an alkyl group and a sulfonic acid (salt) group is an alkylsulfonic acid (salt) having 6 or more carbon atoms, or an alkylbenzenesulfonic acid (salt) having an alkyl group having 6 or more carbon atoms. The alkyl group in these alkylsulfonic acid (salts) is preferably a chain-like alkyl group, and more preferably a linear alkyl group. The alkyl group in these alkylbenzenesulfonic acid (salts) is preferably a chain-like alkyl group, and more preferably a linear alkyl group. A compound containing an alkyl group and a sulfonic acid (salt) group is preferably an alkylbenzenesulfonic acid (salt), and more preferably an alkylbenzenesulfonic acid (salt) having an alkyl group having 6 or more carbon atoms.

[0067] For example, preferred examples of surfactants with logD greater than 0 that include an alkyl group and a phosphonic acid (salt) group include alkylphosphonic acid (salt) with a molecular weight of 200 or less, and alkylphosphonic acid (salt) having 6 or more carbon atoms. More preferred examples of alkylphosphonic acid (salt) having 6 or more carbon atoms include alkylphosphonic acid (salt) having 6 to 12 carbon atoms. Even more preferred examples of alkylphosphonic acid (salt) having 6 or more carbon atoms include alkylphosphonic acid (salt) having 6 to 11 carbon atoms. Even more preferred examples of alkylphosphonic acid (salt) having 6 or more carbon atoms include alkylphosphonic acid (salt) having 7 or more carbon atoms. Even more preferred examples of alkylphosphonic acid (salt) having 6 or more carbon atoms include alkylphosphonic acid (salt) having 7 to 11 carbon atoms. Even more preferred examples of alkylphosphonic acid (salt) having 6 or more carbon atoms include alkylphosphonic acid (salt) having 7 to 10 carbon atoms. A more preferred example of an alkylphosphonic acid (salt) having 6 or more carbon atoms is an alkylphosphonic acid (salt) having 8 to 9 carbon atoms. For example, a preferred example of a compound containing an alkyl group and a phosphonic acid (salt) group is a compound containing an alkyl group having 6 or more carbon atoms and a phosphonic acid (salt) group. A preferred example of a compound containing an alkyl group and a phosphonic acid (salt) group is an alkylphosphonic acid (salt) having 6 to 8 carbon atoms. The alkyl group in these alkylphosphonic acid (salts) is preferably a chain-like alkyl group, and more preferably a linear alkyl group.

[0068] A preferred example of a surfactant containing an alkyl group and a phosphate (salt) group, which has logD greater than 0, is a compound containing an alkyl group having 6 or more carbon atoms and a phosphate (salt) group. A more preferred example of a compound containing an alkyl group and a phosphate (salt) group is an alkyl phosphate ester having an alkyl group having 6 or more carbon atoms, a salt of an alkyl phosphate ester having an alkyl group having 6 or more carbon atoms, a (poly)oxyalkylene alkyl ether phosphate ester having an alkyl group having 6 or more carbon atoms, and a salt of a (poly)oxyalkylene alkyl ether phosphate ester having an alkyl group having 6 or more carbon atoms. A more preferred example of a compound containing an alkyl group and a phosphate (salt) group is an alkyl phosphate ester having an alkyl group having 6 to 12 carbon atoms, and a salt of an alkyl phosphate ester having an alkyl group having 6 to 12 carbon atoms. A more preferred example of a compound containing an alkyl group and a phosphate (salt) group is an alkyl phosphate ester having an alkyl group having 6 to 11 carbon atoms, and a salt of an alkyl phosphate ester having an alkyl group having 6 to 11 carbon atoms. The alkyl groups in these alkyl phosphate esters are preferably linear alkyl groups, and more preferably linear alkyl groups. The alkyl groups in the salts of these alkyl phosphate esters are preferably linear alkyl groups, and more preferably linear alkyl groups. The alkyl groups and alkylene groups in these (poly)oxyalkylene alkyl ether phosphate esters are preferably linear alkyl groups and linear alkylene groups, and more preferably linear alkyl groups and linear alkylene groups. The alkyl groups and alkylene groups in the salts of these (poly)oxyalkylene alkyl ether phosphate esters are preferably linear alkyl groups and linear alkylene groups, and more preferably linear alkyl groups and linear alkylene groups. A preferred example of a compound containing an alkyl group and a phosphate (salt) group is also a compound containing a phosphate (salt) group and an alkyl group having 6 to 12 carbon atoms.A more preferred example of a compound containing an alkyl group and a phosphate (salt) group is a compound containing a phosphate (salt) group and an alkyl group having 6 to 11 carbon atoms.

[0069] There are no particular limitations on specific examples of surfactants with logD greater than 0. Specific examples of surfactants with logD greater than 0 that have an alkyl group, such as (poly)oxyalkylene alkyl ether phosphate esters or salts thereof, include lauryl EO2 acid phosphate (also known as diethylene glycol monolauryl ether acid phosphate) and its salts. Specific examples of alkyl phosphate esters or salts thereof that have logD greater than 0 include mono-n-octyl acid phosphate (also known as mono-n-octyl phosphate), mono-n-dodecyl phosphate (also known as monolauryl phosphate ester), mono(2-ethylhexyl) phosphate (also known as 2-ethylhexyl phosphate ester), and their salts. Specific examples of alkylphosphonic acids (salts) that are surfactants with logD greater than 0 include n-hexylphosphonic acid, n-heptylphosphonic acid, n-octylphosphonic acid, n-nonylphosphonic acid, n-decylphosphonic acid, n-undecylphosphonic acid, n-dodecylphosphonic acid, and their salts. Specific examples of alkyl sulfate esters (salts) that are surfactants with logD greater than 0 include lauryl sulfate (also known as lauryl sulfate ester, n-dodecyl sulfate, n-dodecyl sulfate ester) and its salts. Specific examples of alkyl sulfonic acids (salts) that are surfactants with logD greater than 0 include n-hexylsulfonic acid, laurylsulfonic acid, octadecylsulfonic acid, and their salts. Specific examples of alkylbenzenesulfonic acids (salts) that are surfactants with logD greater than 0 include n-dodecylbenzenesulfonic acid and its salts. When a surfactant with logD greater than 0 is a salt compound, examples of salt types include alkali metal salts, alkaline earth metal salts, and ammonium salts, but the types of salts are not limited to these. Examples of alkali metal salts include sodium salts and potassium salts, but alkali metal salts are not limited to these. Examples of alkaline earth metal salts include magnesium salts and calcium salts, but alkaline earth metal salts are not limited to these. There are no particular restrictions on salt compounds as compounds with logD greater than 0.Examples of salt compounds that act as surfactants with logD greater than 0 include mono-n-dodecyl sodium phosphate, n-dodecyl sodium sulfate, ammonium lauryl sulfate, and n-dodecylbenzenesulfonate sodium. Other examples of salt compounds that act as surfactants with logD greater than 0 include mono-n-dodecyl monosodium phosphate and mono-n-dodecyl disodium phosphate.

[0070] The compounds exemplified as surfactants with logD greater than 0 can be used individually or in combination of two or more. It is preferable that the surfactant with logD greater than 0 includes at least one compound selected from the group consisting of the compounds exemplified above. It is preferable that the surfactant with logD greater than 0 includes at least one compound selected from the group consisting of alkyl sulfate esters, alkyl sulfate ester salts, alkyl sulfonic acid (salt), alkylbenzene sulfonic acid (salt), alkyl phosphonic acid (salt), alkyl phosphate esters, alkyl phosphate ester salts, (poly)oxyalkylene alkyl ether phosphate esters, and (poly)oxyalkylene alkyl ether phosphate ester salts. A surfactant with logD greater than 0 more preferably contains at least one compound selected from the group consisting of alkyl sulfate esters having an alkyl group having 6 or more carbon atoms, salts of alkyl sulfate esters having an alkyl group having 6 or more carbon atoms, alkyl sulfonic acid (salt) having an alkyl group having 6 or more carbon atoms, alkylbenzene sulfonic acid (salt) having an alkyl group having 6 or more carbon atoms, alkyl phosphonic acid (salt) having an alkyl group having 6 or more carbon atoms, alkyl phosphate esters having an alkyl group having 6 or more carbon atoms, salts of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms, (poly)oxyalkylene alkyl ether phosphate esters having an alkyl group having 6 or more carbon atoms, and salts of (poly)oxyalkylene alkyl ether phosphate esters having an alkyl group having 6 or more carbon atoms. A surfactant with logD greater than 0 more preferably contains alkyl phosphonic acid (salt) having 6 to 11 carbon atoms. The surfactant with logD greater than 0 is more preferably composed of at least one compound selected from the group consisting of n-hexylphosphonic acid, n-hexylphosphonate, n-heptylphosphonic acid, n-heptylphosphonate, n-octylphosphonic acid, n-octylphosphonate, n-nonylphosphonic acid, n-nonylphosphonate, n-decylphosphonic acid, n-decylphosphonate, n-undecylphosphonic acid, and n-undecylphosphonate.A surfactant with logD greater than 0 is more preferably composed of at least one compound selected from the group consisting of n-hexylphosphonic acid, n-heptylphosphonic acid, n-octylphosphonic acid, n-nonylphosphonic acid, n-decylphosphonic acid, and n-undecylphosphonic acid. A surfactant with logD greater than 0 is more preferably composed of at least one compound selected from the group consisting of n-octylphosphonic acid and n-nonylphosphonic acid. A surfactant with logD greater than 0 may contain at least one compound selected from the group consisting of n-heptylphosphonic acid, n-octylphosphonic acid, n-nonylphosphonic acid, n-decylphosphonic acid, and n-undecylphosphonic acid. A surfactant with logD greater than 0 may contain at least one compound selected from the group consisting of n-heptylphosphonic acid and n-octylphosphonic acid. A surfactant with logD greater than 0 is particularly preferably composed of n-octylphosphonic acid.

[0071] For example, a surfactant with logD greater than 0 may be at least one compound selected from the group consisting of the compounds exemplified above. For example, surfactants with logD greater than 0 include lauryl EO2 acid phosphate, salts of lauryl EO2 acid phosphate, mono-n-octyl acid phosphate, salts of mono-n-octyl acid phosphate, mono-n-dodecyl phosphate (also known as monolauryl phosphate), salts of mono-n-dodecyl phosphate (also known as monolauryl phosphate), mono(2-ethylhexyl) phosphate (also known as 2-ethylhexyl phosphate), salts of mono(2-ethylhexyl) phosphate (also known as 2-ethylhexyl phosphate), and lauryl sulfate (also known as lauryl sulfate, n-dodecyl sulfate, n-dodecyl sulfate). It may be at least one compound selected from the group consisting of esters, lauryl sulfate (also known as lauryl sulfate ester, n-dodecyl sulfate, n-dodecyl sulfate ester), n-hexylphosphonic acid, n-hexylphosphonate, n-heptylphosphonic acid, n-heptylphosphonate, n-octylphosphonic acid, n-octylphosphonate, n-nonylphosphonic acid, n-nonylphosphonate, n-decylphosphonic acid, n-decylphosphonate, n-undecylphosphonic acid, n-undecylphosphonate, n-dodecylphosphonic acid, n-dodecylphosphonate, n-dodecylbenzenesulfonic acid, and n-dodecylbenzenesulfonate.For example, surfactants with logD greater than 0 include lauryl EO2 acid phosphate, salts of lauryl EO2 acid phosphate, mono-n-octyl acid phosphate, salts of mono-n-octyl acid phosphate, n-hexylphosphonic acid, n-hexylphosphonic acid salt, n-heptylphosphonic acid, n-heptylphosphonic acid salt, n-octylphosphonic acid, n-octylphosphonic acid salt, n-nonylphosphonic acid, n-nonylphosphonic acid salt, n-decylphosphonic acid, and n-decyl It may be at least one compound selected from the group consisting of phosphonates, n-undecylphosphonic acid, n-undecylphosphonate, n-dodecylphosphonic acid, n-dodecylphosphonate, lauryl sulfate (also known as lauryl sulfate ester, n-dodecyl sulfate, n-dodecyl sulfate ester), lauryl sulfate (also known as lauryl sulfate ester salt, n-dodecyl sulfate salt, n-dodecyl sulfate ester salt), n-dodecylbenzenesulfonic acid, and n-dodecylbenzenesulfonate. For example, a surfactant with logD greater than 0 may be at least one compound selected from the group consisting of lauryl EO2 acid phosphate, salts of lauryl EO2 acid phosphate, mono-n-octyl acid phosphate, salts of mono-n-octyl acid phosphate, n-hexylphosphonic acid, n-hexylphosphonate, n-heptylphosphonic acid, n-heptylphosphonate, n-octylphosphonic acid, n-octylphosphonate, n-nonylphosphonic acid, n-nonylphosphonate, n-decylphosphonic acid, n-decylphosphonate, n-undecylphosphonic acid, n-undecylphosphonate, lauryl sulfate, lauryl sulfate, n-dodecylbenzenesulfonic acid, and n-dodecylbenzenesulfonate.For example, surfactants with logD greater than 0 include mono-n-octyl acid phosphate, salts of mono-n-octyl acid phosphate, mono-n-dodecyl phosphate, salts of mono-n-dodecyl phosphate, mono(2-ethylhexyl) phosphate, salts of mono(2-ethylhexyl) phosphate, n-hexylphosphonic acid, n-hexylphosphonic acid salt, n-heptylphosphonic acid, n-heptylphosphonic acid salt, and n-octylphosphonic acid. The surfactant may be at least one compound selected from the group consisting of acids, n-octylphosphonate, n-nonylphosphonic acid, n-nonylphosphonate, n-decylphosphonic acid, n-decylphosphonate, n-undecylphosphonic acid, n-undecylphosphonate, n-dodecylphosphonic acid, n-dodecylphosphonate, lauryl sulfate, lauryl sulfate, n-dodecylbenzenesulfonic acid, and n-dodecylbenzenesulfonate. For example, a surfactant with logD greater than 0 may be at least one compound selected from the group consisting of n-heptylphosphonic acid and n-octylphosphonic acid. For example, a surfactant with logD greater than 0 may be at least one compound selected from the group consisting of n-octylphosphonic acid and n-nonylphosphonic acid. For example, a surfactant with logD greater than 0 may be n-octylphosphonic acid (salt) or n-octylphosphonic acid. For example, a surfactant with logD greater than 0 may be n-nonylphosphonic acid (salt), or it may be n-nonylphosphonic acid.

[0072] A surfactant with logD greater than 0 may include at least one compound selected from the group consisting of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms and salts of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms; and at least one compound selected from the group consisting of alkyl sulfonic acid (salt) having 6 or more carbon atoms, alkylbenzene sulfonic acid (salt) having an alkyl group having 6 or more carbon atoms, alkyl sulfate ester having an alkyl group having 6 or more carbon atoms and salts of alkyl sulfate esters having an alkyl group having 6 or more carbon atoms. A polishing composition containing such a surfactant will also be referred to as "polishing composition (A)" below. In polishing composition (A), it is preferable that the surfactant with logD greater than 0 includes at least one compound selected from the group consisting of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms and salts of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms; and at least one compound selected from the group consisting of alkylbenzene sulfonic acid (salt) having an alkyl group having 6 or more carbon atoms, alkyl sulfate ester having an alkyl group having 6 or more carbon atoms and salts of alkyl sulfate esters having an alkyl group having 6 or more carbon atoms. In the polishing composition (A), it is more preferable that the surfactant with logD greater than 0 comprises: at least one compound selected from the group consisting of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms and salts of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms; and at least one compound selected from the group consisting of alkyl sulfate esters having an alkyl group having 6 or more carbon atoms and salts of alkyl sulfate esters having an alkyl group having 6 or more carbon atoms.

[0073] When polishing composition (A) contains a combination of surfactants with logD greater than 0, the solubility of the surfactants with logD greater than 0 may be improved. In this case, the polishing composition can contain a large amount of surfactants with logD greater than 0. The reason for this is described below. In the presence of at least one compound selected from the group consisting of alkyl sulfonic acid (salt) having 6 or more carbon atoms, alkylbenzene sulfonic acid (salt) having an alkyl group having 6 or more carbon atoms, alkyl sulfate ester having an alkyl group having 6 or more carbon atoms, and salts of alkyl sulfate esters having an alkyl group having 6 or more carbon atoms, the solubility of at least one compound selected from the group consisting of alkyl phosphate ester having an alkyl group having 6 or more carbon atoms and salts of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms is further improved. This is because the amount of at least one compound selected from the group consisting of alkyl phosphate ester having an alkyl group having 6 or more carbon atoms and salts of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms in the polishing composition can be increased. As a result, the ratio of the polishing rate of tungsten material to the polishing rate of titanium material may be further improved. In this case, it is particularly easy to obtain an improvement in the ratio of the polishing speed of tungsten to the polishing speed of silicon nitride.

[0074] In the abrasive composition (A), the surfactant with logD greater than 0 may be a compound that falls within the range of surfactants with logD greater than 0 in the abrasive composition (A), from among the surfactants with logD greater than 0 exemplified above.

[0075] In the polishing composition (A), the alkyl phosphate esters and their salts having an alkyl group with 6 or more carbon atoms are not particularly limited. In these compounds, the number of carbon atoms in the alkyl group is preferably 6 to 20, more preferably 6 to 12, even more preferably 7 to 9, and particularly preferably 8. Specific examples of alkyl phosphate esters or their salts having an alkyl group with 6 or more carbon atoms include mono-n-octyl acid phosphate, salts of mono-n-octyl acid phosphate, mono-n-dodecyl phosphate, salts of mono-n-dodecyl phosphate, mono(2-ethylhexyl) phosphate, and salts of mono(2-ethylhexyl) phosphate.

[0076] In the polishing composition (A), the alkyl sulfonic acid (salt) having an alkyl group with 6 or more carbon atoms is not particularly limited. Examples of alkyl sulfonic acid (salt) having an alkyl group with 6 or more carbon atoms include n-hexyl sulfonic acid, lauryl sulfonic acid, octadecyl sulfonic acid, and salts thereof.

[0077] In the polishing composition (A), the alkylbenzenesulfonic acid (salt) having an alkyl group with 6 or more carbon atoms is not particularly limited. In these compounds, the number of carbon atoms in the alkyl group is preferably 6 to 20, more preferably 8 to 16, even more preferably 10 to 14, and particularly preferably 12. Specific examples of alkylbenzenesulfonic acid (salt) having an alkyl group with 6 or more carbon atoms include n-dodecylbenzenesulfonic acid and n-dodecylbenzenesulfonate.

[0078] In the polishing composition (A), the alkyl sulfate ester or salt having an alkyl group with 6 or more carbon atoms is not particularly limited. In these compounds, the number of carbon atoms in the alkyl group is preferably 6 to 20, more preferably 8 to 16, even more preferably 10 to 14, and particularly preferably 12. Specific examples of alkyl sulfate esters or salts having an alkyl group with 6 or more carbon atoms include lauryl sulfate and lauryl sulfate salts.

[0079] In polishing composition (A), the surfactant with logD greater than 0 preferably comprises at least one compound selected from the group consisting of mono-n-octyl acid phosphate, salts of mono-n-octyl acid phosphate, mono-n-dodecyl phosphate, salts of mono-n-dodecyl phosphate, mono(2-ethylhexyl) phosphate and salts of mono(2-ethylhexyl) phosphate; and at least one compound selected from the group consisting of lauryl sulfate, lauryl sulfate, n-dodecylbenzenesulfonic acid and n-dodecylbenzenesulfonate. In polishing composition, the surfactant with logD greater than 0 preferably comprises at least one compound selected from the group consisting of mono-n-dodecyl phosphate, salts of mono-n-dodecyl phosphate, mono(2-ethylhexyl) phosphate and salts of mono(2-ethylhexyl) phosphate; and at least one compound selected from the group consisting of lauryl sulfate and salts of lauryl sulfate.

[0080] In abrasive composition (A), when the surfactant with logD greater than 0 is a salt, the type of salt is not particularly limited. Examples of salt types include alkali metal salts, alkaline earth metal salts, amine salts, ammonium salts, etc. Alkali metal salts are not particularly limited. Examples of alkali metal salts include lithium salts, sodium salts, potassium salts, etc. Alkaline earth metal salts are not particularly limited. Examples of alkaline earth metal salts include calcium salts, etc. The salts can be used individually or in combination of two or more types. Examples of salt compounds as surfactants with logD greater than 0 in abrasive composition (A) include ammonium lauryl sulfate and sodium n-dodecylbenzenesulfonate.

[0081] For surfactants with logD greater than 0, it is preferable that they are not polymers containing sulfonic acid (salt) groups.

[0082] For surfactants with logD greater than 0, the amount of the surfactant adsorbed onto the quartz crystal microbalance electrode at the pH of the polishing composition is 3 ng / cm² per unit area of ​​the quartz crystal microbalance electrode. ２ The above is preferable. That is, in the polishing composition according to the first embodiment, it is particularly preferable that the compound satisfying condition (1) and / or condition (2) satisfies the above conditions (1) and (2). The preferred range for the amount of surfactant adsorbed onto the quartz crystal microbalance electrode with logD greater than 0 at the pH of the polishing composition is the same as the preferred range for the amount of compound adsorbed onto the quartz crystal microbalance electrode with an adsorption amount greater than or equal to a specific amount, as described later. The amount of surfactant adsorbed onto the quartz crystal microbalance electrode with logD greater than 0 at the pH of the polishing composition can be evaluated by the method of the example.

[0083] (At the pH of the polishing composition, the amount of adsorption to the quartz crystal microbalance electrode per unit area of ​​the quartz crystal microbalance electrode is 3 ng / cm².) ２Compounds as described above) In the polishing composition according to the first embodiment, a compound that satisfies condition (1) and / or condition (2) may also satisfy condition (2), and it is preferable that it satisfies condition (2). A compound that satisfies condition (1) and / or condition (2) preferably contains a compound that satisfies condition (2). In the polishing composition according to the first embodiment, the amount of adsorption (of the compound) onto the quartz crystal microbalance electrode at the pH of the polishing composition is 3 ng / cm² per unit area of ​​the quartz crystal microbalance electrode. ２ It is preferable to include a compound that has an adsorption amount of a specific amount or more. The compound with an adsorption amount of a specific amount or more acts to reduce the polishing speed of the titanium material. The compound with an adsorption amount of a specific amount or more can be used alone or in combination of two or more types.

[0084] For compounds that satisfy condition (1) and / or condition (2), the amount adsorbed onto the quartz crystal microbalance electrode at the pH of the polishing composition is not particularly limited. For compounds whose adsorption amount is above a certain amount, the lower limit of the amount adsorbed onto the quartz crystal microbalance electrode at the pH of the polishing composition is 3 ng / cm³. ２ Preferably, it is 40 ng / cm² or more. ２ It is more preferable that the concentration be 60 ng / cm² or higher. ２ It is even more preferable that the above is true. For compounds whose adsorption amount is above a specific amount, the upper limit of the amount of surfactant adsorbed onto the quartz crystal microbalance electrode at the pH of the polishing composition is 500 ng / cm². ２ Below, 100ng / cm ２ Below, 80ng / cm ２ The following, or 70 ng / cm² ２ The following is also acceptable. For compounds whose adsorption amount is above a specific amount, an example of a preferred range for the amount of adsorption to the quartz crystal microbalance electrode at the pH of the polishing composition is 3 ng / cm². ２ More than 500ng / cm ２ Below, 40ng / cm ２ More than 500ng / cm ２ Below, 40ng / cm ２ 100ng / cm or more ２40 ng / cm or less ２ 80 ng / cm or more ２ 40 ng / cm or less ２ 70 ng / cm or more ２ 60 ng / cm or less ２ 500 ng / cm or more ２ 60 ng / cm or less ２ 100 ng / cm or more ２ 60 ng / cm or less ２ 80 ng / cm or more ２ 60 ng / cm or less ２ 70 ng / cm or more ２ The following are examples, but the range of the adsorption amount onto the quartz crystal microbalance electrode at the pH of the polishing composition is not limited thereto. The adsorption amount of the compound onto the quartz crystal microbalance electrode at the pH of the polishing composition can be evaluated by the method described in the Examples.

[0085] There is no particular limitation on compounds having an adsorption amount equal to or greater than a specific amount. Among the compounds described above as surfactants having a logD of more than 0, for compounds having an adsorption amount equal to or greater than a specific amount, the adsorption amount of the compound onto the quartz crystal microbalance electrode at the pH of the polishing composition is 3 ng / cm ２Compounds that meet the above criteria may be used. Compounds with an adsorption amount of a specific amount or more preferably contain a surfactant, and more preferably are surfactants. Compounds with an adsorption amount of a specific amount or more preferably contain an anionic surfactant, and more preferably are anionic surfactants. Compounds with an adsorption amount of a specific amount or more preferably contain a compound containing an acid (salt) group, more preferably contain a compound containing at least one group selected from the group consisting of a phosphonic acid (salt) group and a phosphate (salt) group, even more preferably contain a compound containing a phosphonic acid (salt) group, and particularly preferably contain a compound containing a phosphonic acid group. Compounds with an adsorption amount of a specific amount or more preferably contain an acid (salt) group, more preferably contain at least one group selected from the group consisting of a phosphonic acid (salt) group and a phosphate (salt) group, even more preferably contain a compound containing a phosphonic acid (salt) group, and particularly preferably contain a compound containing a phosphonic acid group. Compounds with an adsorption amount of a specific amount or more preferably contain a compound containing an alkyl group, and more preferably contain an alkyl group. The descriptions of examples of alkyl group structures, the number of carbon atoms in alkyl groups, and the types of alkyl groups are the same as those described above for surfactants in which logD is greater than 0. In surfactants in which the adsorption amount is greater than a specific amount, the number of carbon atoms in the alkyl group is preferably 8 or more and 9 or less, and particularly preferably 8.

[0086] In this specification, with respect to surfactants whose adsorption amount is greater than a specific amount, the descriptions of the acid (salt) group, the acid (salt), the phosphonic acid group, and the phosphate group (also known as the phosphate ester group) are the same as those described above for surfactants in which logD is greater than 0. For example, alkylphosphonic acid (salt) means that it may be an alkylphosphonic acid or an alkylphosphonate salt. For example, alkylphosphonic acid (salt) having X carbon atoms means that the number of carbon atoms in the alkylphosphonic acid (the number of carbon atoms in the alkyl group) is X, and the alkylphosphonic acid may be in an acidic state or in a salt state. Here, X represents an integer of 1 or more. For example, alkylphosphonic acid (salt) having 8 to 9 carbon atoms means that it may be an alkylphosphonic acid having 8 to 9 carbon atoms, or a salt of an alkylphosphonic acid having 8 to 9 carbon atoms (i.e., the number of carbon atoms in the alkylphosphonic acid is 8 to 9, and the alkylphosphonic acid may be in an acidic state or in a salt state). For example, n-octylphosphonic acid (salt) may be n-octylphosphonic acid or an n-octylphosphonic acid salt.

[0087] Examples of surfactants whose adsorption amount exceeds a specific amount include alkylphosphonic acid (salt) with 8 to 9 carbon atoms. Specific examples of surfactants whose adsorption amount exceeds a specific amount include n-octylphosphonic acid, n-octylphosphonate, n-nonylphosphonic acid, and n-nonylphosphonate. It is preferable that a surfactant whose adsorption amount exceeds a specific amount contains at least one compound selected from the group consisting of the above-mentioned examples. It is even more preferable that a surfactant whose adsorption amount exceeds a specific amount is at least one compound selected from the group consisting of the above-mentioned examples. For example, a surfactant whose adsorption amount exceeds a specific amount may be n-octylphosphonic acid (salt) or n-octylphosphonic acid. For example, a surfactant whose adsorption amount exceeds a specific amount may be n-nonylphosphonic acid (salt) or n-nonylphosphonic acid. Regarding the case where the surfactant whose adsorption amount exceeds a specific amount is a salt compound, the explanation of the type of salt is the same as the explanation above for the case where the surfactant with logD greater than 0 is a salt compound. It is preferable that surfactants with an adsorption amount exceeding a specific amount are not polymers containing sulfonic acid (salt) groups. It is preferable that surfactants with an adsorption amount exceeding a specific amount exclude butyl acid phosphate (i.e., are not butyl acid phosphate).

[0088] (Preferred examples of compounds that satisfy condition (1) and / or condition (2)) For example, a compound that satisfies condition (1) and / or condition (2) preferably contains at least one compound selected from the group consisting of the compounds exemplified above, and more preferably contains a compound containing an alkyl group and at least one selected from the group consisting of phosphorus and sulfur. A compound that satisfies condition (1) and / or condition (2) may also contain a compound containing an alkyl group and phosphorus, and a compound containing an alkyl group and sulfur.

[0089] For example, a compound that satisfies condition (1) and / or condition (2) may satisfy (Ia), (IIa), or both of the following: (Ia) The compound comprises an alkylphosphonic acid (salt) having 6 to 11 carbon atoms; (IIa) The compound comprises at least one compound selected from the group consisting of alkyl phosphate esters having 6 or more carbon atoms and salts of alkyl phosphate esters having 6 or more carbon atoms; and at least one compound selected from the group consisting of alkyl sulfonic acid (salt) having 6 or more carbon atoms, alkylbenzene sulfonic acid (salt) having 6 or more carbon atoms, alkyl sulfate esters having 6 or more carbon atoms and salts of alkyl sulfate esters having 6 or more carbon atoms.

[0090] For example, a compound satisfying condition (1) and / or condition (2) may be at least one compound selected from the group consisting of n-octylphosphonic acid, n-octylphosphonate, n-nonylphosphonic acid, n-nonylphosphonate, mono-n-octyl acid phosphate, salts of mono-n-octyl acid phosphate, mono(2-ethylhexyl) phosphate (also known as 2-ethylhexyl phosphate ester), and salts of mono(2-ethylhexyl) phosphate (also known as salts of 2-ethylhexyl phosphate ester). For example, a compound satisfying condition (1) and / or condition (2) may be n-octylphosphonic acid (salt) or n-octylphosphonic acid. For example, a compound satisfying condition (1) and / or condition (2) may be n-nonylphosphonic acid (salt) or n-nonylphosphonic acid. For example, it is preferable that the compound satisfying condition (1) and / or condition (2) is not a polymer containing a sulfonic acid (salt) group.

[0091] (Content of compounds satisfying condition (1) and / or condition (2)) The content of compounds satisfying condition (1) and / or condition (2) (particularly preferably surfactants with logD greater than 0) in the polishing composition is not particularly limited. The lower limit of the content of compounds satisfying condition (1) and / or condition (2) (particularly preferably surfactants with logD greater than 0) in the polishing composition is preferably 0.001% by mass or more, more preferably 0.01% by mass or more, even more preferably 0.03% by mass or more, even more preferably 0.05% by mass or more, and particularly preferably 0.1% by mass or more (0.10% by mass or more) with respect to the total mass of the polishing composition. When the content of compounds satisfying condition (1) and / or condition (2) (particularly preferably surfactants with logD greater than 0) in the polishing composition is within these ranges, the polishing speed of the titanium material surface can be suppressed more efficiently. The upper limit of the content of a compound satisfying condition (1) and / or condition (2) in the polishing composition (particularly preferably a surfactant with logD greater than 0) is preferably 10% by mass or less, more preferably 1% by mass or less, even more preferably 0.5% by mass or less, even more preferably 0.3% by mass or less, and particularly preferably 0.2% by mass or less (0.20% by mass or less) based on the total mass of the polishing composition. The upper limit of the content of a compound satisfying condition (1) and / or condition (2) in the polishing composition (particularly preferably a surfactant with logD greater than 0) may be 0.10% by mass or less, 0.05% by mass or less, or less than 0.03% by mass based on the total mass of the polishing composition. When the content of a compound satisfying condition (1) and / or condition (2) in the polishing composition (particularly preferably a surfactant with logD greater than 0) is within these ranges, the polishing speed of the tungsten material can be maintained more sufficiently.Preferred examples of the range of content of compounds (particularly preferably surfactants with logD greater than 0) that satisfy condition (1) and / or condition (2) in the polishing composition include, with respect to the total mass of the polishing composition: 0.001% to 10% by mass, 0.01% to 1% by mass, 0.05% to 0.5% by mass, 0.1% to 0.3% by mass, 0.10% to 0.20% by mass, 0.01% to 0.10% by mass, 0.01% to 0.05% by mass, and 0.0 Examples include 1% by mass or more and 0.03% by mass or less, 0.05% by mass or more and 0.10% by mass or less, 0.03% by mass or more and 0.5% by mass or less, 0.05% by mass or more and 1% by mass or less, 0.05% by mass or more and 0.2% by mass or less, 0.1% by mass or more and 1% by mass or less, 0.1% by mass or more and 0.5% by mass or less, 0.1% by mass or more and 0.2% by mass or less, but the range of content of compounds that satisfy condition (1) and / or condition (2) (particularly preferably surfactants with logD greater than 0) in the polishing composition is not limited to these. When two or more compounds that satisfy condition (1) and / or condition (2) (particularly preferably surfactants with logD greater than 0) are used, the content of compounds that satisfy condition (1) and / or condition (2) (particularly preferably surfactants with logD greater than 0) represents the total amount of these compounds. For example, a preferred range for the content of surfactants in the polishing composition in which logD is greater than 0 is the same range as the content of compounds that satisfy condition (1) and / or condition (2) in the polishing composition described above. For example, a preferred range for surfactants in the polishing composition in which the adsorption amount is greater than or equal to a specific amount is the same range as the content of compounds that satisfy condition (1) and / or condition (2) in the polishing composition described above.

[0092] When a surfactant with logD greater than 0 includes a compound containing an alkyl group and phosphorus, and a compound containing an alkyl group and sulfur, the relationship between the content of the alkyl group and phosphorus-containing surfactant with logD greater than 0 in the abrasive composition (hereinafter also referred to as content (i)) and the content of the alkyl group and sulfur-containing surfactant with logD greater than 0 in the abrasive composition (hereinafter also referred to as content (ii)) is not particularly limited. When two or more alkyl group and phosphorus-containing compounds are used as surfactants with logD greater than 0, content (i) represents the total amount of these compounds. When two or more alkyl group and sulfur-containing compounds are used as surfactants with logD greater than 0, content (ii) represents the total amount of these compounds. The ratio of content (i) to content (ii) (hereinafter also referred to as content (i) / content (ii)) (mass ratio; the same applies hereinafter) is not particularly limited. The lower limit of content (i) / content (ii) is preferably 0.01 or more, more preferably 0.1 or more, even more preferably 1 or more, even more preferably 10 or more, even more preferably 15 or more, even more preferably 20 or more, even more preferably 50 or more, even more preferably 60 or more, even more preferably 75 or more, even more preferably 90 or more, and particularly preferably 100 or more. The upper limit of content (i) / content (ii) may be 10,000 or less, 5,000 or less, 1,000 or less, 800 or less, 500 or less, 400 or less, 300 or less, 200 or less, 150 or less, 120 or less, or less than 100.Preferred examples of the ranges for content (i) / content (ii) include: 0.01 to 10,000, 0.1 to 5,000, 1 to 1,000, 10 to 800, 15 to 500, 20 to 400, 50 to 300, 60 to 250, 75 to 200, 90 to 150, 100 to 120, 50 to 250, 50 to 200, 50 to 150, 50 to 120, and 60 to 30 Examples include 0 or less, 60 to 200, 60 to 150, 60 to 120, 75 to 300, 75 to 250, 75 to 150, 75 to 120, 90 to 300, 90 to 250, 90 to 200, 90 to 120, 100 to 300, 100 to 250, 100 to 200, 100 to 150, etc., but the range of content (i) / content (ii) is not limited to these. When content (i) / content (ii) is within these ranges, the polishing speed for tungsten materials and the selectivity ratio of tungsten materials to materials other than tungsten materials may be further improved. In particular, the polishing speed of tungsten and the selectivity ratio of tungsten to titanium nitride are more likely to be improved.

[0093] The content of a surfactant compound in the polishing composition (A), which is at least one selected from the group consisting of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms and salts of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms, and which has a logD greater than 0 (hereinafter also referred to as content (ia)), is not particularly limited. The lower limit of content (ia) is preferably 0.001% by mass or more, more preferably 0.01% by mass or more, even more preferably 0.05% by mass or more, even more preferably 0.1% by mass or more, even more preferably 0.2% by mass or more, even more preferably 0.3% by mass or more, even more preferably 0.4% by mass or more, and particularly preferably 0.5% by mass or more, based on the total mass of the polishing composition. When content (ia) is within these ranges, the ratio of the polishing rate of the tungsten material to the polishing rate of the titanium material may be further improved. In this case, the effect of improving the ratio of the polishing rate of tungsten to the polishing rate of silicon nitride is particularly easy to obtain. The upper limit of the content (ia) may be 10% by mass or less, 5% by mass or less, 3% by mass or less, 2% by mass or less, 1% by mass or less, 0.8% by mass or less, 0.7% by mass or less, or less than 0.4% by mass, relative to the total mass of the abrasive composition. Preferred ranges for the content (ia) include 0.001% by mass or more and 10% by mass or less, 0.01% by mass or more and 5% by mass or less, 0.05% by mass or more and 3% by mass or less, 0.1% by mass or more and 2% by mass or less, 0.2% by mass or more and 1% by mass or less, 0.3% by mass or more and 0.8% by mass or less, 0.4% by mass or more and 0.8% by mass or less, 0.5% by mass or more and 0.8% by mass or less, relative to the total mass of the abrasive composition, but the range of the content (ia) is not limited to these. When two or more compounds are used that are surfactants selected from the group consisting of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms and salts of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms, and whose logD is greater than 0, the content (ia) represents the total amount of these compounds.

[0094] The content of a surfactant compound in the polishing composition (A) that is selected from the group consisting of alkyl sulfonic acid (salt) having 6 or more carbon atoms, alkylbenzene sulfonic acid (salt) having an alkyl group having 6 or more carbon atoms, alkyl sulfate ester having an alkyl group having 6 or more carbon atoms, and a salt of an alkyl sulfate ester having an alkyl group having 6 or more carbon atoms, and having a logD greater than 0 (hereinafter also referred to as content (iiia)) is not particularly limited. The lower limit of content (iiia) is preferably 0.001% by mass or more, more preferably 0.002% by mass or more, even more preferably 0.003% by mass or more, even more preferably 0.004% by mass or more, and particularly preferably 0.005% by mass or more, based on the total mass of the polishing composition. When content (iiia) is within these ranges, the ratio of the polishing rate of the tungsten material to the polishing rate of the titanium material may be further improved. In this case, the effect of improving the ratio of the polishing rate of tungsten to the polishing rate of silicon nitride is particularly easy to obtain. The upper limit of the content (iiia) is preferably 10% by mass or less, more preferably 1% by mass or less, even more preferably 0.5% by mass or less, even more preferably 0.3% by mass or less, even more preferably 0.1% by mass or less, and particularly preferably 0.01% by mass or less, based on the total mass of the polishing composition. Preferred ranges for the content (iiia) include 0.001% by mass or more and 10% by mass or less, 0.002% by mass or more and 1% by mass or less, 0.003% by mass or more and 0.5% by mass or less, 0.004% by mass or more and 0.3% by mass or less, 0.005% by mass or more and 0.1% by mass or less, 0.005% by mass or more and 0.01% by mass or less, based on the total mass of the polishing composition, but the range of the content (iiia) is not limited to these. When using two or more compounds that are surfactants selected from the group consisting of alkyl sulfonic acid (salt) having 6 or more carbon atoms, alkylbenzene sulfonic acid (salt) having an alkyl group having 6 or more carbon atoms, alkyl sulfate ester having an alkyl group having 6 or more carbon atoms, and a salt of an alkyl sulfate ester having an alkyl group having 6 or more carbon atoms, and which have logD greater than 0, the content (iia) represents the total amount of these compounds.

[0095] In the polishing composition (A), the ratio of content (ia) to content (iia) (hereinafter also referred to as content (ia) / content (iia)) (mass ratio; the same applies hereinafter) is not particularly limited. The lower limit of content (ia) / content (iia) is preferably 0.01 or more, more preferably 0.1 or more, even more preferably 1 or more, even more preferably 10 or more, even more preferably 15 or more, even more preferably 20 or more, even more preferably 50 or more, even more preferably 60 or more, even more preferably 75 or more, even more preferably 90 or more, and particularly preferably 100 or more. The upper limit of the content (ia) / content (iiia) may be 10,000 or less, 5,000 or less, 1,000 or less, 800 or less, 500 or less, 400 or less, 300 or less, 200 or less, 150 or less, 120 or less, or less than 100. Preferred examples of the content (ia) / content (iiia) ranges include: 0.01 to 10,000, 0.1 to 5,000, 1 to 1,000, 10 to 800, 15 to 500, 20 to 400, 50 to 300, 60 to 250, 75 to 200, 90 to 150, 100 to 120, 50 to 250, 50 to 200, 50 to 150, 50 to 120, and 60 to 30 Examples include 0 or less, 60 to 200, 60 to 150, 60 to 120, 75 to 300, 75 to 250, 75 to 150, 75 to 120, 90 to 300, 90 to 250, 90 to 200, 90 to 120, 100 to 300, 100 to 250, 100 to 200, 100 to 150, etc., but the range of content (ia) / content (iiia) is not limited to these. When content (ia) / content (iiia) is within these ranges, the polishing speed for tungsten materials and the selectivity ratio of tungsten materials to materials other than tungsten materials may be further improved. In particular, the polishing speed of tungsten and the selectivity ratio of tungsten to titanium nitride are more likely to be improved.

[0096] [(I), (II), or both thereof] The polishing composition according to the second embodiment satisfies (I), (II), or both thereof: (I) The polishing composition comprises an alkylphosphonic acid (salt) having 6 to 11 carbon atoms; (II) The polishing composition comprises at least one compound selected from the group consisting of alkyl phosphate esters having 6 or more carbon atoms and salts of alkyl phosphate esters having 6 or more carbon atoms; and at least one compound selected from the group consisting of alkyl sulfonic acid (salt) having 6 or more carbon atoms, alkylbenzene sulfonic acid (salt) having 6 or more carbon atoms, alkyl sulfate esters having 6 or more carbon atoms and salts of alkyl sulfate esters having 6 or more carbon atoms.

[0097] [Alkylphosphonic acid (salt) having 6 to 11 carbon atoms] The polishing composition according to the second embodiment preferably satisfies (I) above. That is, the polishing composition according to the second embodiment preferably contains alkylphosphonic acid (salt) having 6 to 11 carbon atoms. Alkylphosphonic acid (salt) having 6 to 11 carbon atoms acts to significantly reduce the polishing speed of at least one material other than tungsten material. Alkylphosphonic acid (salt) having 6 to 11 carbon atoms can be used alone or in combination of two or more types.

[0098] In this specification, with respect to alkylphosphonic acids (salts) having 6 to 11 carbon atoms, the acid (salt) may be an acid or a salt of an acid. For example, alkylphosphonic acid (salt) may be an alkylphosphonic acid or an alkylphosphonate. For example, alkylphosphonic acid (salt) having X carbon atoms means that the alkylphosphonic acid has X carbon atoms (number of carbon atoms in the alkyl group), and that the alkylphosphonic acid may be in an acidic state or a salt state. Here, X represents an integer of 1 or more. For example, alkylphosphonic acid (salt) having 6 to 11 carbon atoms may be an alkylphosphonic acid having 6 to 11 carbon atoms, or a salt of an alkylphosphonic acid having 6 to 11 carbon atoms (i.e., the alkylphosphonic acid has 6 to 11 carbon atoms, and that the alkylphosphonic acid may be in an acidic state or a salt state). For example, n-octylphosphonic acid (salt) may be n-octylphosphonic acid or an n-octylphosphonate.

[0099] The water-octanol partition coefficient logD of alkylphosphonic acid (salt) having 6 to 11 carbon atoms is not particularly limited. The explanation of logD is the same as the explanation of logD for surfactants with logD greater than 0 described above. It is preferable that the logD of alkylphosphonic acid (salt) having 6 to 11 carbon atoms is greater than 0. The lower limit of logD of alkylphosphonic acid (salt) having 6 to 11 carbon atoms is preferably 0.5 or higher, more preferably 1.0 or higher, even more preferably 1.5 or higher, even more preferably 2.0 or higher, and particularly preferably 2.1 or higher. The lower limit of logD of surfactant may be 2.6 or higher, 3.0 or higher, or 4.0 or higher. The upper limit of logD for alkylphosphonic acid (salt) having 6 to 11 carbon atoms is not particularly limited, but it is preferably 5.0 or less, more preferably 4.0 or less, even more preferably 3.5 or less, even more preferably 3.0 or less, even more preferably less than 2.5, even more preferably 2.3 or less, and particularly preferably 2.2 or less. The upper limit of logD for alkylphosphonic acid (salt) having 6 to 11 carbon atoms may be less than 1.5. Preferred examples of the logD range for alkylphosphonic acids (salts) having 6 to 11 carbon atoms include greater than 0 and 5.0 or less, greater than 0 and 4.0 or less, greater than 0 and 3.5 or less, 0.5 to 3.5 or less, 0.5 to 3.0 or less, 0.5 to 2.5 or less, 1.0 to 3.5 or less, 1.0 to 3.0 or less, 1.5 to 3.0 or less, 2.0 to 3.0 or less, 2.0 to less than 2.5, 2.1 to 2.3 or less, 2.1 to 2.2 or less, 2.6 to 5.0 or less, 3.0 to 5.0 or less, 3.5 to 5.0 or less, 4.0 to 5.0 or less, greater than 0 and less than 1.5, 0.5 to less than 1.5, 1.0 to less than 1.5, etc. However, the logD range for alkylphosphonic acids (salts) having 6 to 11 carbon atoms is not limited to these. If the logD of an alkylphosphonic acid (salt) having 6 to 11 carbon atoms is within this range, it may be possible to achieve a lower polishing rate for materials other than tungsten by the polishing composition, an improved selectivity ratio of tungsten material to materials other than tungsten material, or both.It is particularly preferable that the values ​​calculated using ACD / LogD, a chemical calculation software manufactured by Advanced Chemistry Development (ACD), fall within the above range.

[0100] The alkyl group contained in alkylphosphonic acid (salt) having 6 to 11 carbon atoms is not particularly limited. A preferred example of the alkyl group is a linear alkyl group. Examples of linear alkyl groups include linear alkyl groups and branched alkyl groups. A more preferred example of the alkyl group is a linear alkyl group. The alkyl group preferably includes a linear alkyl group, and more preferably includes a linear alkyl group. The number of carbon atoms in the alkyl group contained in alkylphosphonic acid (salt) having 6 to 11 carbon atoms (preferably the number of carbon atoms in a linear alkyl group, more preferably the number of carbon atoms in a linear alkyl group; the same applies hereinafter in this paragraph) is not particularly limited as long as it is between 6 and 11. The upper limit of the number of carbon atoms in the alkyl group is preferably 10 or less, and more preferably 9 or less. The upper limit of the number of carbon atoms in the alkyl group may be 8 or less, 7 or less, or 6 or less. The lower limit of the number of carbon atoms in the alkyl group is more preferably 7 or more, and even more preferably 8 or more. The lower limit of the number of carbon atoms in the alkyl group may be 9 or more, or 10 or more. Preferred ranges for the number of carbon atoms in an alkyl group include 6 to 10, 6 to 9, 6 to 8, 7 to 11, 7 to 10, 7 to 9, 8 to 11, 8 to 10, 8 to 9, etc., but the range of carbon atoms in an alkyl group is not limited to these. The number of carbon atoms in an alkyl group may be 7, 8, 9, 10, or 11. The number of carbon atoms in an alkyl group is preferably 8 or 9, and particularly preferably 8. When the number of carbon atoms in an alkyl group is within these ranges, the polishing speed of the tungsten material by the polishing composition may be further improved, the selectivity ratio of the tungsten material to materials other than tungsten material may be improved, or both may be achieved. Preferred examples of alkyl groups include n-hexyl group, n-heptyl group, n-octyl group, n-nonyl group, n-decyl group, n-undecyl group, etc. More preferred examples of alkyl groups include n-heptyl, n-octyl, n-nonyl, n-decyl, and n-undecyl groups.Further preferred examples of alkyl groups include n-heptyl, n-octyl, n-nonyl, and n-decyl groups. Further preferred examples of alkyl groups include n-heptyl and n-octyl groups. Particularly preferred examples of alkyl groups include n-octyl groups.

[0101] A preferred example of an alkylphosphonic acid (salt) having 6 to 11 carbon atoms is an alkylphosphonic acid (salt) having 6 to 11 carbon atoms in which the alkyl group is a chain-like alkyl group. A more preferred example of an alkylphosphonic acid (salt) having 6 to 11 carbon atoms is an alkylphosphonic acid (salt) having 6 to 11 carbon atoms in which the alkyl group is a linear alkyl group.

[0102] Preferred examples of alkylphosphonic acids (salts) having 6 to 11 carbon atoms include alkylphosphonic acids (salts) having 7 to 11 carbon atoms. More preferred examples of alkylphosphonic acids (salts) having 6 to 11 carbon atoms include alkylphosphonic acids (salts) having 7 to 10 carbon atoms. Even more preferred examples of alkylphosphonic acids (salts) having 6 to 11 carbon atoms include alkylphosphonic acids (salts) having 8 to 9 carbon atoms. The alkyl group in these alkylphosphonic acids (salts) is preferably a chain-like alkyl group, and more preferably a linear alkyl group.

[0103] There are no particular limitations on specific examples of alkylphosphonic acids (salts) having 6 to 11 carbon atoms. Specific examples of alkylphosphonic acids (salts) having 6 to 11 carbon atoms include n-hexylphosphonic acid, n-heptylphosphonic acid, n-octylphosphonic acid, n-nonylphosphonic acid, n-decylphosphonic acid, n-undecylphosphonic acid, and their salts. When an alkylphosphonic acid having 6 to 11 carbon atoms is in the form of a salt, examples of the type of salt include alkali metal salts, alkaline earth metal salts, and ammonium salts, but the type of salt is not limited to these. Examples of alkali metal salts include sodium salts and potassium salts, but alkali metal salts are not limited to these. Examples of alkaline earth metal salts include magnesium salts and calcium salts, but alkaline earth metal salts are not limited to these.

[0104] The compounds exemplified as alkylphosphonic acids (salts) having 6 to 11 carbon atoms can be used individually or in combination of two or more. Preferably, the alkylphosphonic acid (salt) having 6 to 11 carbon atoms contains at least one compound selected from the group consisting of the compounds exemplified above. More preferably, the alkylphosphonic acid (salt) having 6 to 11 carbon atoms contains at least one compound selected from the group consisting of n-hexylphosphonic acid, n-hexylphosphonate, n-heptylphosphonic acid, n-heptylphosphonate, n-octylphosphonic acid, n-octylphosphonate, n-nonylphosphonic acid, n-nonylphosphonate, n-decylphosphonic acid, n-decylphosphonate, n-undecylphosphonic acid, and n-undecylphosphonate. Alkylphosphonic acid (salt) having 6 to 11 carbon atoms is more preferably composed of at least one compound selected from the group consisting of n-hexylphosphonic acid, n-heptylphosphonic acid, n-octylphosphonic acid, n-nonylphosphonic acid, n-decylphosphonic acid, and n-undecylphosphonic acid. Alkylphosphonic acid (salt) having 6 to 11 carbon atoms is more preferably composed of at least one compound selected from the group consisting of n-octylphosphonic acid and n-nonylphosphonic acid. Alkylphosphonic acid (salt) having 6 to 11 carbon atoms is particularly preferably composed of n-octylphosphonic acid.

[0105] For example, the alkylphosphonic acid (salt) having 6 to 11 carbon atoms may be at least one compound selected from the group consisting of the compounds exemplified above. For example, the alkylphosphonic acid (salt) having 6 to 11 carbon atoms may be at least one compound selected from the group consisting of n-hexylphosphonic acid, n-hexylphosphonate, n-heptylphosphonic acid, n-heptylphosphonate, n-octylphosphonic acid, n-octylphosphonate, n-nonylphosphonic acid, n-nonylphosphonate, n-decylphosphonic acid, n-decylphosphonate, n-undecylphosphonic acid, and n-undecylphosphonate. For example, the alkylphosphonic acid (salt) having 6 to 11 carbon atoms may be at least one compound selected from the group consisting of n-octylphosphonic acid and n-nonylphosphonic acid. For example, the alkylphosphonic acid (salt) having 6 to 11 carbon atoms may be n-octylphosphonic acid (salt) or n-octylphosphonic acid. For example, the alkylphosphonic acid (salt) having 6 to 11 carbon atoms may be n-nonylphosphonic acid (salt) or n-nonylphosphonic acid.

[0106] The content of alkylphosphonic acid (salt) having 6 to 11 carbon atoms in the polishing composition is not particularly limited. The lower limit of the content of alkylphosphonic acid (salt) having 6 to 11 carbon atoms in the polishing composition is preferably 0.001% by mass or more, more preferably 0.01% by mass or more, even more preferably 0.05% by mass or more, and particularly preferably 0.10% by mass or more, based on the total mass of the polishing composition. When the content of alkylphosphonic acid (salt) having 6 to 11 carbon atoms in the polishing composition is within these ranges, the polishing speed of the titanium material surface can be suppressed more efficiently. The upper limit of the content of alkylphosphonic acid (salt) having 6 to 11 carbon atoms in the polishing composition is preferably 10% by mass or less, more preferably 1% by mass or less, even more preferably 0.5% by mass or less, even more preferably 0.3% by mass or less, and particularly preferably 0.20% by mass or less, based on the total mass of the polishing composition. The upper limit of the content of alkylphosphonic acid (salt) having 6 to 11 carbon atoms in the polishing composition may be 0.10% by mass or less, 0.05% by mass or less, or less than 0.03% by mass, based on the total mass of the polishing composition. When the content of alkylphosphonic acid (salt) having 6 to 11 carbon atoms in the polishing composition is within these ranges, the polishing speed of the tungsten material can be maintained more effectively. Preferred examples of the content range of alkylphosphonic acid (salt) having 6 to 11 carbon atoms in the polishing composition include 0.001% to 10% by mass, 0.01% to 1% by mass, 0.05% to 0.5% by mass, 0.1% to 0.3% by mass, 0.10% to 0.20% by mass, 0.01% to 0.10% by mass, 0.01% to 0.05% by mass, 0.01% to 0.03% by mass, 0.05% to 0.10% by mass, etc., relative to the total mass of the polishing composition.Examples of the range of surfactant content in the abrasive composition that has an adsorption amount above a specific amount include 0.03% to 0.5% by mass, 0.05% to 1% by mass, 0.05% to 0.2% by mass, 0.1% to 1% by mass, 0.1% to 0.5% by mass, and 0.1% to 0.2% by mass, relative to the total mass of the abrasive composition. However, the range of alkylphosphonic acid (salt) content with 6 to 11 carbon atoms in the abrasive composition is not limited to these. When two or more alkylphosphonic acid (salts) with 6 to 11 carbon atoms are used, the content of alkylphosphonic acid (salts) with 6 to 11 carbon atoms represents the total amount of these.

[0107] [Combination of compounds in (II)] The polishing composition according to the second embodiment preferably satisfies the above (II). That is, the polishing composition according to the second embodiment preferably comprises: at least one compound selected from the group consisting of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms and salts of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms; and at least one compound selected from the group consisting of alkyl sulfonic acid (salt) having 6 or more carbon atoms, alkylbenzene sulfonic acid (salt) having an alkyl group having 6 or more carbon atoms, alkyl sulfate ester having an alkyl group having 6 or more carbon atoms and salts of alkyl sulfate ester having an alkyl group having 6 or more carbon atoms.

[0108] When the above (II) is satisfied, the solubility of at least one compound selected from the group consisting of alkyl phosphate esters having C6 or more alkyl groups and salts of alkyl phosphate esters having C6 or more alkyl groups may be improved. In this case, the polishing composition can contain a large amount of at least one compound selected from the group consisting of alkyl phosphate esters having C6 or more alkyl groups and salts of alkyl phosphate esters having C6 or more alkyl groups. The reason for this is described below. In the presence of at least one compound selected from the group consisting of alkyl sulfonic acid (salt) having C6 or more alkyl groups, alkylbenzene sulfonic acid (salt) having C6 or more alkyl groups, alkyl sulfate esters having C6 or more alkyl groups, and salts of alkyl sulfate esters having C6 or more alkyl groups, the solubility of at least one compound selected from the group consisting of alkyl phosphate esters having C6 or more alkyl groups and salts of alkyl phosphate esters having C6 or more alkyl groups is further improved. Therefore, the amount of at least one compound selected from the group consisting of alkyl phosphate esters having C6 or more alkyl groups and salts of alkyl phosphate esters having C6 or more alkyl groups in the polishing composition can be increased. As a result, the ratio of the polishing speed of tungsten material to the polishing speed of titanium material may be further improved. In this case, the improvement in the ratio of the polishing speed of tungsten to the polishing speed of silicon nitride is particularly easily obtained.

[0109] Alkyl phosphate esters having an alkyl group having 6 or more carbon atoms, salts of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms, alkyl sulfonic acid (salt) having an alkyl group having 6 or more carbon atoms, alkylbenzene sulfonic acid (salt) having an alkyl group having 6 or more carbon atoms, alkyl sulfate esters having an alkyl group having 6 or more carbon atoms, and salts of alkyl sulfate esters having an alkyl group having 6 or more carbon atoms can each be used individually or in combination of two or more.

[0110] In this specification, alkylsulfonic acid (salt) may be an alkylsulfonic acid or an alkylsulfonate salt. For example, an alkylsulfonic acid (salt) having Y carbon atoms may be an alkylsulfonic acid (number of carbon atoms in the alkyl group) which is Y, and the alkylsulfonic acid may be in an acidic state or in a salt state. Here, Y represents an integer of 1 or more. For example, an alkylsulfonic acid (salt) having 6 or more carbon atoms may be an alkylsulfonic acid having 6 or more carbon atoms, or a salt of an alkylsulfonic acid having 6 or more carbon atoms (i.e., the alkylsulfonic acid has 6 or more carbon atoms, and the alkylsulfonic acid may be in an acidic state or in a salt state).

[0111] The water-octanol partition coefficient logD of each compound in (II) above is not particularly limited. The explanation of logD is the same as the explanation of logD for surfactants where logD is greater than 0. Examples of the range of the water-octanol partition coefficient logD of each compound in (II) above are the same as the range shown in the explanation of logD for alkylphosphonic acid (salt) having 6 to 11 carbon atoms above. For example, the logD of each compound in (II) above may be greater than 0 and less than or equal to 5.0.

[0112] Among the above (II), it is more preferable that the polishing composition comprises: at least one compound selected from the group consisting of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms and salts of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms; and at least one compound selected from the group consisting of alkylbenzene sulfonic acid (salt) having an alkyl group having 6 or more carbon atoms, alkyl sulfate esters having an alkyl group having 6 or more carbon atoms and salts of alkyl sulfate esters having an alkyl group having 6 or more carbon atoms. Among the above (II), it is more preferable that the polishing composition comprises: at least one compound selected from the group consisting of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms and salts of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms; and at least one compound selected from the group consisting of alkyl sulfate esters having an alkyl group having 6 or more carbon atoms and salts of alkyl sulfate esters having an alkyl group having 6 or more carbon atoms. In this case, the ratio of the polishing rate of the tungsten material to the polishing rate of the titanium material may be further improved. In this case, the effect of improving the ratio of the polishing rate of tungsten to the polishing rate of silicon nitride is particularly easy to obtain.

[0113] In (II) above, alkyl phosphate esters and their salts having an alkyl group with 6 or more carbon atoms are not particularly limited. In these compounds, the number of carbon atoms in the alkyl group is preferably 6 to 20, more preferably 6 to 12, even more preferably 7 to 9, and particularly preferably 8. Specific examples of alkyl phosphate esters or their salts having an alkyl group with 6 or more carbon atoms include mono-n-octyl acid phosphate, salts of mono-n-octyl acid phosphate, mono-n-dodecyl phosphate (also known as mono-lauryl phosphate ester), salts of mono-n-dodecyl phosphate (also known as mono-lauryl phosphate ester), mono(2-ethylhexyl) phosphate (also known as 2-ethylhexyl phosphate ester), and salts of mono(2-ethylhexyl) phosphate (also known as 2-ethylhexyl phosphate ester).

[0114] In (II) above, the alkylsulfonic acid (salt) having an alkyl group with 6 or more carbon atoms is not particularly limited. Examples of alkylsulfonic acid (salt) having an alkyl group with 6 or more carbon atoms include n-hexylsulfonic acid, laurylsulfonic acid, octadecylsulfonic acid, and salts thereof.

[0115] In (II) above, the alkylbenzenesulfonic acid (salt) having an alkyl group with 6 or more carbon atoms is not particularly limited. In these compounds, the number of carbon atoms in the alkyl group is preferably 6 to 20, more preferably 8 to 16, even more preferably 10 to 14, and particularly preferably 12. Specific examples of alkylbenzenesulfonic acid (salt) having an alkyl group with 6 or more carbon atoms include n-dodecylbenzenesulfonic acid and n-dodecylbenzenesulfonate.

[0116] In (II) above, the alkyl sulfate esters or salts having an alkyl group with 6 or more carbon atoms are not particularly limited. In these compounds, the number of carbon atoms in the alkyl group is preferably 6 to 20, more preferably 8 to 16, even more preferably 10 to 14, and particularly preferably 12. Specific examples of alkyl sulfate esters or salts having an alkyl group with 6 or more carbon atoms include lauryl sulfate and lauryl sulfate salts.

[0117] Among the above (II), it is preferable that the polishing composition comprises at least one compound selected from the group consisting of mono-n-octyl acid phosphate, a salt of mono-n-octyl acid phosphate, mono-n-dodecyl phosphate, a salt of mono-n-dodecyl phosphate, mono(2-ethylhexyl) phosphate and a salt of mono(2-ethylhexyl) phosphate; and at least one compound selected from the group consisting of lauryl sulfate, lauryl sulfate, n-dodecylbenzenesulfonic acid and n-dodecylbenzenesulfonate. Among the above (II), it is preferable that the polishing composition comprises at least one compound selected from the group consisting of mono-n-dodecyl phosphate, a salt of mono-n-dodecyl phosphate, mono(2-ethylhexyl) phosphate and a salt of mono(2-ethylhexyl) phosphate; and at least one compound selected from the group consisting of lauryl sulfate and a salt of lauryl sulfate.

[0118] When the compound in (II) above is a salt, the type of salt is not particularly limited. Examples of salt types include alkali metal salts, alkaline earth metal salts, amine salts, ammonium salts, etc. Alkali metal salts are not particularly limited. Examples of alkali metal salts include lithium salts, sodium salts, potassium salts, etc. Alkaline earth metal salts are not particularly limited. Examples of alkaline earth metal salts include calcium salts, etc. The salts can be used individually or in combination of two or more types. When the compound in (II) above is a salt, examples of salt compounds include ammonium lauryl sulfate and sodium n-dodecylbenzenesulfonate.

[0119] When the above (II) is satisfied, the content of at least one compound selected from the group consisting of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms and salts of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms (hereinafter also referred to as content (ib)) in the polishing composition is not particularly limited. The lower limit of content (ib) is preferably 0.001% by mass or more, more preferably 0.01% by mass or more, even more preferably 0.05% by mass or more, even more preferably 0.1% by mass or more, even more preferably 0.2% by mass or more, even more preferably 0.3% by mass or more, even more preferably 0.4% by mass or more, and particularly preferably 0.5% by mass or more, based on the total mass of the polishing composition. When the content (ib) is within these ranges, the ratio of the polishing speed of the tungsten material to the polishing speed of the titanium material may be further improved. In this case, the effect of improving the ratio of the polishing speed of tungsten to the polishing speed of silicon nitride is particularly easy to obtain. The upper limit of the content (ib) may be 10% by mass or less, 5% by mass or less, 3% by mass or less, 2% by mass or less, 1% by mass or less, 0.8% by mass or less, 0.7% by mass or less, or less than 0.4% by mass, relative to the total mass of the abrasive composition. Preferred ranges for the content (ib) include 0.001% by mass or more and 10% by mass or less, 0.01% by mass or more and 5% by mass or less, 0.05% by mass or more and 3% by mass or less, 0.1% by mass or more and 2% by mass or less, 0.2% by mass or more and 1% by mass or less, 0.3% by mass or more and 0.8% by mass or less, 0.4% by mass or more and 0.8% by mass or less, 0.5% by mass or more and 0.8% by mass or less, relative to the total mass of the abrasive composition, but the range of the content (ib) is not limited to these. When using two or more compounds selected from the group consisting of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms and salts of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms, the content (ib) represents the total amount of these compounds.

[0120] When the above (II) is satisfied, the content of at least one compound selected from the group consisting of alkyl sulfonic acid (salt) having 6 or more carbon atoms, alkylbenzene sulfonic acid (salt) having an alkyl group having 6 or more carbon atoms, alkyl sulfate ester having an alkyl group having 6 or more carbon atoms, and alkyl sulfate ester salt having an alkyl group having 6 or more carbon atoms (hereinafter also referred to as content (iib)) in the polishing composition is not particularly limited. The lower limit of content (iib) is preferably 0.001% by mass or more, more preferably 0.002% by mass or more, even more preferably 0.003% by mass or more, even more preferably 0.004% by mass or more, and particularly preferably 0.005% by mass or more, based on the total mass of the polishing composition. When content (iib) is within these ranges, the ratio of the polishing rate of the tungsten material to the polishing rate of the titanium material may be further improved. In this case, the effect of improving the ratio of the polishing rate of tungsten to the polishing rate of silicon nitride is particularly easy to obtain. The upper limit of the content (iib) is preferably 10% by mass or less, more preferably 1% by mass or less, even more preferably 0.5% by mass or less, even more preferably 0.3% by mass or less, even more preferably 0.1% by mass or less, and particularly preferably 0.01% by mass or less, based on the total mass of the polishing composition. Preferred ranges for the content (iib) include 0.001% by mass or more and 10% by mass or less, 0.002% by mass or more and 1% by mass or less, 0.003% by mass or more and 0.5% by mass or less, 0.004% by mass or more and 0.3% by mass or less, 0.005% by mass or more and 0.1% by mass or less, 0.005% by mass or more and 0.01% by mass or less, based on the total mass of the polishing composition, but the range of the content (iib) is not limited to these. When using two or more compounds selected from the group consisting of alkyl sulfonic acid (salt) having 6 or more carbon atoms, alkylbenzene sulfonic acid (salt) having an alkyl group having 6 or more carbon atoms, alkyl sulfate ester having an alkyl group having 6 or more carbon atoms, and a salt of an alkyl sulfate ester having an alkyl group having 6 or more carbon atoms, the content (iib) represents the total amount of these compounds.

[0121] When the above (II) is satisfied, the ratio of content (ib) to content (iib) (hereinafter also referred to as content (ib) / content (iib)) (mass ratio; the same applies hereinafter) is not particularly limited. The lower limit of content (ib) / content (iib) is preferably 0.01 or more, more preferably 0.1 or more, even more preferably 1 or more, even more preferably 10 or more, even more preferably 15 or more, even more preferably 20 or more, even more preferably 50 or more, even more preferably 60 or more, even more preferably 75 or more, even more preferably 90 or more, and particularly preferably 100 or more. The upper limit of the content (ib) / content (iib) may be 10,000 or less, 5,000 or less, 1,000 or less, 800 or less, 500 or less, 400 or less, 300 or less, 200 or less, 150 or less, 120 or less, or less than 100. Preferred ranges for content (ib) / content (iib) include: 0.01 to 10,000, 0.1 to 5,000, 1 to 1,000, 10 to 800, 15 to 500, 20 to 400, 50 to 300, 60 to 250, 75 to 200, 90 to 150, 100 to 120, 50 to 250, 50 to 200, 50 to 150, 50 to 120, and 60 to 30 Examples include 0 or less, 60 to 200, 60 to 150, 60 to 120, 75 to 300, 75 to 250, 75 to 150, 75 to 120, 90 to 300, 90 to 250, 90 to 200, 90 to 120, 100 to 300, 100 to 250, 100 to 200, 100 to 150, etc., but the range of content (ib) / content (iib) is not limited to these. When the content (ib) / content (iib) is within these ranges, the polishing speed for tungsten materials and the selectivity ratio of tungsten materials to materials other than tungsten materials may be further improved. In particular, the polishing speed of tungsten and the selectivity ratio of tungsten to titanium nitride are more likely to be improved.

[0122] [Oxidizing agent] The polishing compositions according to each of the above embodiments may or may not further contain an oxidizing agent, but it is preferable that they further contain an oxidizing agent. The oxidizing agent may act to ionize the surface of the object to be polished, making it easier to chemically remove the object to be polished. The oxidizing agent can be used alone or in combination of two or more types.

[0123] The type of oxidizing agent is not particularly limited. Examples of oxidizing agents include peroxides. Peroxides are not particularly limited. Examples of peroxides include hydrogen peroxide, peracetic acid, percarbonates, urea peroxide, halogen element oxoates, persulfates, etc. Halogen element oxoates are not particularly limited. Examples of halogen element oxoates include perchlorates, chlorates, chlorites, hypochlorites, etc. Persulfates are not particularly limited. Examples of persulfates include sodium persulfate, potassium persulfate, ammonium persulfate, etc. These oxidizing agents can be used individually or in combination of two or more. It is preferable that the oxidizing agent contains at least one compound selected from the group consisting of the compounds exemplified above. From the viewpoint of polishing speed and selectivity ratio, it is more preferable that the oxidizing agent contains hydrogen peroxide. For example, the oxidizing agent may be at least one compound selected from the group consisting of the compounds exemplified above, or it may be hydrogen peroxide.

[0124] The content of the oxidizing agent in the polishing composition is not particularly limited. The lower limit of the oxidizing agent content in the polishing composition is preferably more than 0.005% by mass, more preferably 0.01% by mass or more, even more preferably 0.05% by mass or more, even more preferably 0.1% by mass or more, and even more preferably 0.5% by mass or more, based on the total mass of the polishing composition. When the oxidizing agent content in the polishing composition is within these ranges, the polishing speed of the tungsten material by the polishing composition may be further improved. The upper limit of the oxidizing agent content in the polishing composition is preferably 10% by mass or less, more preferably 5% by mass or less, and even more preferably 3% by mass or less, based on the total mass of the polishing composition. When the oxidizing agent content in the polishing composition is within these ranges, the material cost of the polishing composition can be further reduced, as can the burden of processing the polishing composition after use, i.e., waste liquid treatment, can be further reduced. In addition, excessive oxidation of the surface of the object to be polished is less likely to occur, which may further reduce the roughness of the metal surface after polishing. Preferred ranges for the content of the oxidizing agent in the polishing composition include 0.005% to 10% by mass, 0.01% to 10% by mass, 0.05% to 5% by mass, 0.05% to 3% by mass, 0.1% to 5% by mass, 0.1% to 3% by mass, and 0.5% to 3% by mass, relative to the total mass of the polishing composition. However, the range of the oxidizing agent content in the polishing composition is not limited to these. When two or more oxidizing agents are used, the content of the oxidizing agents represents their total amount.

[0125] [pH Adjuster] The polishing compositions according to each of the above embodiments may or may not further contain a pH adjuster, but it is preferable to further contain a pH adjuster. The pH adjuster can be used alone or in combination of two or more types. The polishing compositions according to preferred embodiments of the first embodiment (for example, Examples 1-1 to 1-4, etc.) may contain a pH adjuster that is a different component from the compound that satisfies condition (1) and / or condition (2) (for example, the surfactant with logD greater than 0 mentioned above). The polishing compositions according to preferred embodiments of the second embodiment (for example, Example 2-1, etc.) may contain a pH adjuster that is a different component from the compound shown in (I) above (for example, the alkylphosphonic acid (salt) with 6 to 11 carbon atoms mentioned above), and also different from the compound shown in (II) above.

[0126] The pH adjuster is not particularly limited. Examples of pH adjusters include acids, bases, and salts thereof. The pH adjuster may be, for example, an inorganic compound, an organic compound, or a combination thereof. More specifically, preferred examples of pH adjusters include inorganic acids and organic acids. Inorganic acids are not particularly limited. Examples of inorganic acids include sulfuric acid, nitric acid, boric acid, carbonic acid, hypophosphorous acid, phosphorous acid, and phosphoric acid. Organic acids are not particularly limited. Examples of organic acids include carboxylic acids and sulfonic acids (e.g., alkylsulfonic acids with fewer than 6 carbon atoms). Carboxylic acids are not particularly limited. Examples of carboxylic acids include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, 2-methylbutyric acid, 3,3-dimethylbutyric acid, 2-ethylbutyric acid, benzoic acid, glycolic acid, salicylic acid, glyceric acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, phthalic acid, malic acid, tartaric acid, citric acid, lactic acid, etc. Sulfonic acids are not particularly limited. Examples of sulfonic acids include methanesulfonic acid, ethanesulfonic acid, isethionic acid, 10-camphorsulfonic acid, etc. 10-camphorsulfonic acid is not particularly limited. Examples of 10-camphorsulfonic acid include (+)-10-camphorsulfonic acid, etc. Bases are not particularly limited. Examples of bases include potassium hydroxide (KOH), sodium hydroxide (NaOH), etc. The compounds exemplified above as pH adjusters can be used individually or in combination of two or more. Preferably, the pH adjuster contains at least one compound selected from the group consisting of the compounds exemplified above. From the viewpoint of adjusting the pH to the pH of the polishing composition according to each of the above embodiments, the pH adjuster preferably contains an acid, more preferably an inorganic acid, and even more preferably nitric acid. For example, the pH adjuster may be an acid, at least one compound selected from the group consisting of the acids exemplified above, an inorganic acid, at least one compound selected from the group consisting of the inorganic acids exemplified above, or nitric acid.The pH adjuster may contain at least one acid selected from the group consisting of organic acids and inorganic acids, at least one acid selected from the group consisting of sulfonic acids and inorganic acids, at least one acid selected from the group consisting of 10-camphorsulfonic acid and nitric acid, or at least one acid selected from the group consisting of (+)-10-camphorsulfonic acid and nitric acid. For example, the pH adjuster may be (+)-10-camphorsulfonic acid.

[0127] The content of the pH adjusting agent in the polishing composition is not particularly limited, and can be adjusted as appropriate so that the polishing composition reaches the desired pH.

[0128] [Water] The polishing compositions according to each of the above embodiments may or may not contain water, but it is preferable that they contain water. The polishing compositions according to each of the above embodiments contain a dispersion medium, and it is preferable that the dispersion medium contains water. It is even more preferable that the dispersion medium consists substantially of water. The term "substantially" above means that a dispersion medium other than water may be included insofar as the effects of the present invention can be achieved. More specifically, the dispersion medium preferably consists of 90% to 100% by mass of water and 0% to 10% by mass of a dispersion medium other than water, and more preferably consists of 99% to 100% by mass of water and 0% to 1% by mass of a dispersion medium other than water. It is particularly preferable that the dispersion medium is water.

[0129] The water is not particularly limited. From the viewpoint of not inhibiting the action of the components contained in the polishing composition, water that contains as few impurities as possible is preferred. Preferred examples of water include pure water obtained by removing impurity ions with an ion exchange resin and then removing foreign matter through a filter, ultrapure water obtained by removing impurity ions with an ion exchange resin and then removing foreign matter through a filter, and distilled water.

[0130] [Sulfonic Acid (Salt) Group-Containing Polymer] The polishing compositions according to each of the above embodiments may or may not further contain a sulfonic acid (salt) group-containing polymer. By containing a sulfonic acid (salt) group-containing polymer in the polishing compositions according to each of the above embodiments, the ratio of the polishing speed of the tungsten material to the polishing speed of a material containing part 2: silicon (Si) and at least one selected from the group consisting of oxygen (O) and nitrogen (N) may be further improved. In this case, in particular, an improvement in the ratio of the polishing speed of tungsten to the polishing speed of silicon nitride is easily obtained. The sulfonic acid (salt) group-containing polymer can be used alone or in combination of two or more types.

[0131] In this specification, with respect to a sulfonic acid (salt) group-containing polymer, the sulfonic acid (salt) group may be a sulfonic acid group or a group of a sulfonic acid salt. In the description of a sulfonic acid (salt) group-containing polymer in this specification, the sulfonic acid group refers to a sulfo group (*-SO ３H; * represents a connecting part. When a sulfonic acid (salt) group is the base of a sulfonic acid salt, the type of salt in the sulfonic acid salt group is not particularly limited. When a sulfonic acid (salt) group-containing polymer has salt groups other than sulfonic acid salt groups, the type of salt in the salt groups other than sulfonic acid salt groups is not particularly limited. Examples of salt types in sulfonic acid salt groups and salt types in salt groups other than sulfonic acid salt groups include alkali metal salts, alkaline earth metal salts, amine salts, ammonium salts, etc. Alkali metal salts are not particularly limited. Examples of alkali metal salts in sulfonic acid salt groups and salt groups other than sulfonic acid salt groups include lithium salts, sodium salts, potassium salts, etc. Alkaline earth metal salts are not particularly limited. Examples of alkaline earth metal salts in sulfonic acid salt groups and salt groups other than sulfonic acid salt groups include calcium salts, magnesium salts, etc. When a sulfonic acid (salt) group-containing polymer has a sulfonic acid salt group, the sulfonic acid salt group may be a single group or a combination of two or more groups. When a sulfonic acid (salt) group-containing polymer has both a sulfonic acid salt group and a salt group other than a sulfonic acid salt group, the types of these salts may be the same or different.

[0132] The sulfonic acid (salt) group-containing polymer is not particularly limited. Examples of sulfonic acid (salt) group-containing polymers include sulfonic acid (salt) group-containing polyvinyl alcohol (sulfonic acid (salt) modified polyvinyl alcohol), sulfonic acid (salt) group-containing polystyrene, sulfonic acid (salt) group-containing polyvinyl acetate (sulfonic acid (salt) modified polyvinyl acetate), sulfonic acid (salt) group-containing polyester, (co)polymers of sulfonic acid (salt) group-containing (meth)acrylic acid derivatives, (co)polymers of sulfonic acid (salt) group-containing (meth)acrylamide derivatives, copolymers of sulfonic acid (salt) group-containing monomers and (meth)acryloyl group-containing monomers, sulfonic acid (salt) group-containing polyisoprene, sulfonic acid (salt) group-containing allyl polymers, etc. The sulfonic acid (salt) group-containing polystyrene is not particularly limited. Examples of sulfonic acid (salt) group-containing polystyrene include polystyrene sulfonic acid (salt), etc. Copolymers of a sulfonic acid (salt) group-containing monomer and a (meth)acryloyl group-containing monomer are not particularly limited. Examples of copolymers of a sulfonic acid (salt) group-containing monomer and a (meth)acryloyl group-containing monomer include copolymers of a sulfonic acid (salt) group-containing monomer and (meth)acrylic acid (salt). Examples of copolymers of a sulfonic acid (salt) group-containing monomer and a (meth)acryloyl group-containing monomer include copolymers of a sulfonic acid (salt) group-containing monomer and (meth)acrylic acid (salt), copolymers of a sulfonic acid (salt) group-containing (meth)acrylamide monomer and a (meth)acryloyl group-containing monomer. Preferred examples of copolymers of a sulfonic acid (salt) group-containing monomer and a (meth)acryloyl group-containing monomer include copolymers of a sulfonic acid (salt) group-containing (meth)acrylamide monomer and (meth)acrylic acid (salt). The compounds exemplified in this paragraph can be used individually or in combination of two or more. The sulfonic acid (salt) group-containing polymer preferably contains at least one compound selected from the group consisting of the compounds exemplified in this paragraph.

[0133] The sulfonic acid (salt) group-containing polymer is preferably at least one compound selected from the group consisting of a sulfonic acid (salt) group-containing polystyrene, a (co)polymer of a sulfonic acid (salt) group-containing (meth)acrylic acid derivative, a (co)polymer of a sulfonic acid (salt) group-containing (meth)acrylamide derivative, and a copolymer of a (meth)acryloyl group-containing monomer and a sulfonic acid (salt) group-containing monomer. More preferably, the sulfonic acid (salt) group-containing polymer is at least one compound selected from the group consisting of a polystyrene sulfonic acid (salt), a (co)polymer of a sulfonic acid (salt) group-containing (meth)acrylamide monomer, and a copolymer of a sulfonic acid (salt) group-containing (meth)acrylamide monomer and (meth)acrylic acid (salt). The sulfonic acid (salt) group-containing polymer is more preferably at least one compound selected from the group consisting of polystyrene sulfonic acid, a (co)polymer of a sulfonic acid group-containing (meth)acrylamide monomer, and a copolymer of a sulfonic acid group-containing (meth)acrylamide monomer and (meth)acrylic acid (salt).

[0134] In this specification, "(meth)acrylic" comprehensively refers to acrylic and methacrylic. Similarly, "(meth)acryloyl" comprehensively refers to acryloyl and methacryloyl. Similarly, "(meth)acrylate" comprehensively refers to acrylate and methacrylate. In this specification, "(co)polymer" comprehensively refers to homopolymer and copolymer.

[0135] The proportion of sulfonic acid (salt) group-containing repeating units in a sulfonic acid (salt) group-containing polymer is not particularly limited, but is preferably 50 mol% or more, more preferably 75 mol% or more, even more preferably 90 mol% or more, even more preferably 95 mol% or more, even more preferably 98 mol% or more, and particularly preferably more than 98 mol% (upper limit 100 mol%), relative to the total number of moles of repeating units in the sulfonic acid (salt) group-containing polymer. The proportion of sulfonic acid (salt) group-containing repeating units in a sulfonic acid (salt) group-containing polymer may be 100 mol% of the total number of moles of repeating units in the sulfonic acid (salt) group-containing polymer.

[0136] The weight-average molecular weight (Mw) of the sulfonic acid (salt) group-containing polymer is not particularly limited. The lower limit of the weight-average molecular weight of the sulfonic acid (salt) group-containing polymer is preferably 1,000 or more, more preferably 5,000 or more, even more preferably 8,000 or more, and particularly preferably 10,000 or more. The upper limit of the weight-average molecular weight of the sulfonic acid (salt) group-containing polymer is preferably 1,000,000 or less, more preferably 100,000 or less, even more preferably 50,000 or less, and particularly preferably 35,000 or less. The range of the weight-average molecular weight of the sulfonic acid (salt) group-containing polymer may be, for example, 1,000 or more and 1,000,000 or less, 5,000 or more and 100,000 or less, 8,000 or more and 50,000 or less, or 10,000 or more and 35,000 or less. The weight-average molecular weight of a sulfonic acid (salt) group-containing polymer can be measured as a value converted to sodium polyacrylate using gel permeation chromatography (GPC). Details of the measurement method are described in the examples.

[0137] The water-octanol partition coefficient logD of a sulfonic acid (salt) group-containing polymer is not particularly limited, but is preferably 0 or less. The water-octanol partition coefficient logD of a sulfonic acid (salt) group-containing polymer may be, for example, -20 or more and 0 or less, -15 or more and less than 0, or -10 or more and -5 or less. The explanation of logD is the same as the explanation of logD for surfactants in which logD is greater than 0. Values ​​calculated using ACD / LogD, a chemical calculation software from Advanced Chemistry Development (ACD), may be within the above range.

[0138] The sulfonic acid (salt) group-containing polymer may be a commercially available product or a synthetic product. There are no particular restrictions on the commercially available product, but examples include Aron® A-6012 manufactured by Toagosei Co., Ltd., and Polinas® PS-1 manufactured by Tosoh Finechem Co., Ltd.

[0139] The content of sulfonic acid (salt) group-containing polymer in the polishing composition is not particularly limited. The lower limit of the content of sulfonic acid (salt) group-containing polymer in the polishing composition is preferably 0.0001% by mass or more, more preferably 0.001% by mass or more, and even more preferably 0.004% by mass or more, based on the total mass of the polishing composition. The lower limit of the content of sulfonic acid (salt) group-containing polymer in the polishing composition may be 0.005% by mass or more, and may be greater than 0.008% by mass, based on the total mass of the polishing composition. The upper limit of the content of sulfonic acid (salt) group-containing polymer in the polishing composition is preferably 1% by mass or less, more preferably 0.100% by mass or less, even more preferably 0.020% by mass or less, even more preferably less than 0.015% by mass, even more preferably 0.012% by mass or less, even more preferably 0.010% by mass or less, and especially preferably 0.008% by mass or less, based on the total mass of the polishing composition. The content of sulfonic acid (salt) group-containing polymers in the polishing composition may be, for example, 0.0001% by mass or more and 1% by mass or less, 0.001% by mass or more and 0.100% by mass or less, 0.001% by mass or more and 0.020% by mass or less, 0.004% by mass or more and less than 0.015% by mass, 0.004% by mass or more and 0.012% by mass or less, 0.004% by mass or more and 0.010% by mass or less, or 0.004% by mass or more and 0.008% by mass or less, based on the total mass of the polishing composition. When two or more types of sulfonic acid (salt) group-containing polymers are used, the content of sulfonic acid (salt) group-containing polymers represents the total amount of these polymers. When the content of sulfonic acid (salt) group-containing polymers in the polishing composition is within these ranges, the ratio of the polishing rate of the tungsten material to the polishing rate of the material comprising part 2: silicon (Si) and at least one selected from the group consisting of oxygen (O) and nitrogen (N) may be further improved. In this case, the effect of improving the ratio of the polishing rate of tungsten to the polishing rate of silicon nitride is particularly easy to obtain.

[0140] When the polishing composition according to the first embodiment contains a sulfonic acid (salt) group-containing polymer, the relationship between the content of a surfactant with logD greater than 0 in the polishing composition and the content of a sulfonic acid (salt) group-containing polymer in the polishing composition is not particularly limited. The ratio of the content of a surfactant with logD greater than 0 in the polishing composition to the content of a sulfonic acid (salt) group-containing polymer in the polishing composition (content of a surfactant with logD greater than 0 in the polishing composition / content of a sulfonic acid (salt) group-containing polymer in the polishing composition) (mass ratio; the same applies hereinafter) is preferably 1 or more, more preferably 5 or more, even more preferably 8 or more, even more preferably 9 or more, even more preferably 10 or more, even more preferably 14 or more, even more preferably 20 or more, and particularly preferably 25 or more. The ratio of the content of surfactants with logD greater than 0 in the polishing composition to the content of sulfonic acid (salt) group-containing polymers in the polishing composition (content of surfactants with logD greater than 0 in the polishing composition / content of sulfonic acid (salt) group-containing polymers in the polishing composition) is preferably 100 or less, more preferably 50 or less, and even more preferably 30 or less. The ratio of the content of surfactants with logD greater than 0 in the polishing composition to the content of sulfonic acid (salt) group-containing polymers in the polishing composition (content of surfactants with logD greater than 0 in the polishing composition / content of sulfonic acid (salt) group-containing polymers in the polishing composition) may be less than 20 or less than 14. Preferred ranges for the ratio of the content of surfactants with logD greater than 0 in the polishing composition to the content of sulfonic acid (salt) group-containing polymers in the polishing composition (content of surfactants with logD greater than 0 in the polishing composition / content of sulfonic acid (salt) group-containing polymers in the polishing composition) include 1 to 100, 5 to 50, 8 to 30, 9 to 30, 10 to 30, 14 to 30, 20 to 30, 25 to 30, etc.However, the range of the ratio of the content of surfactants with logD greater than 0 in the polishing composition to the content of sulfonic acid (salt) group-containing polymers in the polishing composition (content of surfactants with logD greater than 0 in the polishing composition / content of sulfonic acid (salt) group-containing polymers in the polishing composition) is not limited to these. When two or more sulfonic acid (salt) group-containing polymers are used, the content of sulfonic acid (salt) group-containing polymers represents the total amount of these polymers. When two or more surfactants with logD greater than 0 are used, the content of surfactants with logD greater than 0 represents the total amount of these surfactants. When the ratio of the content of surfactants with logD greater than 0 in the polishing composition to the content of sulfonic acid (salt) group-containing polymers in the polishing composition (content of surfactants with logD greater than 0 in the polishing composition / content of sulfonic acid (salt) group-containing polymers in the polishing composition) is within these ranges, the ratio of the polishing rate of the tungsten material to the polishing rate of a material containing part 2: silicon (Si) and at least one selected from the group consisting of oxygen (O) and nitrogen (N) may be further improved. In this case, the effect of improving the ratio of the polishing rate of tungsten to the polishing rate of silicon nitride is particularly easy to obtain.

[0141] When the polishing composition according to the first embodiment contains an alkylphosphonic acid (salt) having 6 to 11 carbon atoms, which is a surfactant with logD greater than 0, and also contains a sulfonic acid (salt) group-containing polymer, the relationship between the content of the alkylphosphonic acid (salt) having 6 to 11 carbon atoms in the polishing composition and the content of the sulfonic acid (salt) group-containing polymer in the polishing composition is not particularly limited. In this paragraph, "content of alkylphosphonic acid (salt) having 6 to 11 carbon atoms" in the polishing composition according to the first embodiment refers to "content of alkylphosphonic acid (salt) having 6 to 11 carbon atoms, which is a surfactant with logD greater than 0" in the polishing composition according to the first embodiment. When the polishing composition according to the second embodiment contains an alkylphosphonic acid (salt) having 6 to 11 carbon atoms and a sulfonic acid (salt) group-containing polymer, the relationship between the content of the alkylphosphonic acid (salt) having 6 to 11 carbon atoms in the polishing composition and the content of the sulfonic acid (salt) group-containing polymer in the polishing composition is not particularly limited. In the polishing composition according to the first embodiment and the polishing composition according to the second embodiment, the ratio of the content of alkylphosphonic acid (salt) having 6 to 11 carbon atoms in the polishing composition to the content of sulfonic acid (salt) group-containing polymer in the polishing composition (content of alkylphosphonic acid (salt) having 6 to 11 carbon atoms in the polishing composition / content of sulfonic acid (salt) group-containing polymer in the polishing composition) (mass ratio; the same applies hereinafter) is preferably 1 or more, more preferably 5 or more, even more preferably 8 or more, even more preferably 9 or more, even more preferably 10 or more, even more preferably 14 or more, even more preferably 20 or more, and particularly preferably 25 or more. In the polishing composition according to the first embodiment and the polishing composition according to the second embodiment, the ratio of the content of alkylphosphonic acid (salt) having 6 to 11 carbon atoms in the polishing composition to the content of sulfonic acid (salt) group-containing polymer in the polishing composition (content of alkylphosphonic acid (salt) having 6 to 11 carbon atoms in the polishing composition / content of sulfonic acid (salt) group-containing polymer in the polishing composition) is preferably 100 or less, more preferably 50 or less, and even more preferably 30 or less.In the polishing composition according to the first embodiment and the polishing composition according to the second embodiment, the ratio of the content of alkylphosphonic acid (salt) having 6 to 11 carbon atoms in the polishing composition to the content of sulfonic acid (salt) group-containing polymer in the polishing composition (content of alkylphosphonic acid (salt) having 6 to 11 carbon atoms in the polishing composition / content of sulfonic acid (salt) group-containing polymer in the polishing composition) may be less than 20 or less than 14. In the polishing composition according to the first embodiment and the polishing composition according to the second embodiment, preferred examples of the range of the ratio of the content of alkylphosphonic acid (salt) having 6 to 11 carbon atoms in the polishing composition to the content of sulfonic acid (salt) group-containing polymer in the polishing composition (content of alkylphosphonic acid (salt) having 6 to 11 carbon atoms in the polishing composition / content of sulfonic acid (salt) group-containing polymer in the polishing composition) include 1 to 100, 5 to 50, 8 to 30, 9 to 30, 10 to 30, 14 to 30, 20 to 30, 25 to 30, etc. However, the range of the ratio of the content of alkylphosphonic acid (salt) having 6 to 11 carbon atoms in the polishing composition to the content of sulfonic acid (salt) group-containing polymer in the polishing composition (content of alkylphosphonic acid (salt) having 6 to 11 carbon atoms in the polishing composition / content of sulfonic acid (salt) group-containing polymer in the polishing composition) is not limited to these. When two or more sulfonic acid (salt) group-containing polymers are used, the content of sulfonic acid (salt) group-containing polymers represents the total amount of these polymers. When two or more alkylphosphonic acid (salts) having 6 to 11 carbon atoms are used, the content of alkylphosphonic acid (salts) having 6 to 11 carbon atoms represents the total amount of these polymers. If the ratio of the content of alkylphosphonic acid (salts) having 6 to 11 carbon atoms in the polishing composition to the content of sulfonic acid (salt) group-containing polymers in the polishing composition (content of alkylphosphonic acid (salts) having 6 to 11 carbon atoms in the polishing composition / content of sulfonic acid (salt) group-containing polymers in the polishing composition) is within these ranges, the ratio of the polishing rate of the tungsten material to the polishing rate of a material containing part 2: silicon (Si) and at least one selected from the group consisting of oxygen (O) and nitrogen (N) may be further improved.In this case, it is particularly easy to obtain an improvement in the ratio of the polishing speed of tungsten to the polishing speed of silicon nitride.

[0142] [Other Components] The polishing composition according to the present invention may further contain other components (one or more other components) as long as they do not impede the effects of the present invention. The other components are not particularly limited. Examples of other components include dispersion media other than water, metal corrosion inhibitors, preservatives, fungicides, reducing agents, complexing agents, electrical conductivity modifiers, etc. Each of these components can be used individually or in combination of two or more.

[0143] (Antifungal agents (preservatives)) The polishing compositions according to each of the above embodiments may or may not further contain antifungal agents (preservatives). Antifungal agents (preservatives) can be used alone or in combination of two or more. Antifungal agents (preservatives) are not particularly limited and can be appropriately selected according to the desired use and purpose. Examples of antifungal agents (preservatives) include isothiazoline preservatives, parahydroxybenzoic acid esters, phenoxyethanol, etc. Isothiazoline preservatives are not particularly limited. Examples of isothiazoline preservatives include 2-methyl-4-isothiazolin-3-one, 5-chloro-2-methyl-4-isothiazolin-3-one, etc. Isothiazoline preservatives can be used alone or in combination of two or more.

[0144] (Dispersion medium other than water) The polishing compositions according to each of the above embodiments may or may not further contain a dispersion medium other than water. The dispersion medium other than water can be used alone or in combination of two or more types. The dispersion medium other than water is not particularly limited. Examples of dispersion mediums other than water include organic solvents. The organic solvent is not particularly limited. Examples of organic solvents include alcohols. The alcohols are not particularly limited. Examples of alcohols include methanol, ethanol, ethylene glycol, etc. The organic solvent can be used alone or in combination of two or more types.

[0145] [Water Contact Angle] The polishing compositions according to each of the above embodiments are preferably used for polishing an object to be polished, which includes the portion 1 or the titanium material portion. In this case, the water contact angle on the surface of the titanium material constituting the portion 1 or the titanium material portion of the object to be polished, after it has been immersed in the polishing composition according to each of the above embodiments, is not particularly limited. The polishing compositions according to each of the above embodiments are preferably characterized in that the water contact angle on the surface of the titanium material constituting the portion 1 or the titanium material portion of the object to be polished, after it has been immersed in the polishing composition, is 90° or more. In this specification, the water contact angle on the surface of the titanium material constituting the portion 1 or the titanium material portion of the object to be polished, after it has been immersed in the polishing composition, is also simply referred to as the "water contact angle on the surface of the titanium material after immersion". The water contact angle on the surface of the titanium material after immersion is not particularly limited. The lower limit of the water contact angle on the surface of the titanium material after immersion is more preferably 90° or more, and even more preferably 100° or more. The upper limit of the water contact angle on the surface of the titanium material after immersion is preferably less than 180°, more preferably 130° or less, and even more preferably 120° or less. Preferred examples of the range of the water contact angle on the surface of the titanium material after immersion include 90° or more and less than 180°, 90° or more and 130° or less, 90° or more and 120° or less, 100° or more and less than 180°, 100° or more and 130° or less, 100° or more and 120° or less, etc., but the range of the water contact angle on the surface of the titanium material after immersion is not limited to these. The water contact angle on the surface of the titanium material after immersion can be evaluated by the method described in the examples.

[0146] [pH] The pH of the polishing composition according to each of the above embodiments is not particularly limited. For example, the pH of the polishing composition according to Embodiment 1-2 is 1.0 or more and 6.0 or less. For example, the pH of the polishing composition according to Embodiment 1-3 is 1.0 or more and 6.0 or less. For example, the pH of the polishing composition according to Embodiment 1-4 is 1.0 or more and 3.0 or less. For example, the pH of the polishing composition according to Embodiment 2-1 is 1.0 or more and 5.0 or less. The lower limit of the pH of the polishing composition according to each of the above embodiments (preferably the polishing composition according to Embodiment 1-2 or the polishing composition according to Embodiment 2-1) is preferably 1.0 or more, more preferably greater than 1.0, even more preferably 1.5 or more, even more preferably 1.8 or more, even more preferably 1.9 or more, and particularly preferably 2.0 or more. Within these ranges, the polishing composition is easier to handle. The pH of the polishing composition according to each of the above embodiments may be 7.0 or less. The upper limit of the pH of the polishing composition according to each of the above embodiments (preferably the polishing composition according to Embodiment 1-2 or the polishing composition according to Embodiment 2-1) is preferably 5.0 or less, more preferably 4.5 or less, even more preferably 4.0 or less, even more preferably 3.0 or less, and particularly preferably 2.5 or less. Within these ranges, the polishing speed of the object to be polished (e.g., tungsten material) may be further improved. Preferred examples of the pH range of the polishing composition according to each of the above embodiments include 1.0 to 7.0. For example, preferred examples of the pH range of the polishing composition according to Embodiment 1-2 include 1.0 to 5.0, greater than 1.0 and 4.0 or less, 1.5 to 3.0, 1.8 to 3.0, 1.9 to 3.0, 1.8 to 2.5, 1.9 to 2.5, 2.0 to 2.5, etc., but the pH range of the polishing composition according to Embodiment 1-2 is not limited to these.For example, preferred pH ranges for the polishing compositions according to Embodiments 1-3 above include 1.0 to 5.0, 1.0 to 4.0, 1.0 to 3.0, 1.0 to 2.5, greater than 1.0 and 4.0, 1.5 to 3.0, 2.0 to 2.5, etc., but the pH range of the polishing compositions according to Embodiments 1-3 above is not limited to these. For example, preferred pH ranges for the polishing compositions according to Embodiments 1-4 above include 1.0 to 2.5, 1.5 to 3.0, 2.0 to 2.5, etc., but the pH range of the polishing compositions according to Embodiments 1-4 above is not limited to these. For example, preferred pH ranges for the polishing composition according to Embodiment 2-1 above include 1.0 to 4.5, greater than 1.0 and 4.0 or less, 1.5 to 3.0, 1.8 to 3.0, 1.9 to 3.0, 1.8 to 2.5, 1.9 to 2.5, and 2.0 to 2.5, but the pH range of the polishing composition according to Embodiment 2-1 above is not limited to these. The pH of the polishing composition can be measured using a glass electrode type hydrogen ion concentration indicator. Details of the measurement method are described in the examples. The pH of the polishing composition can be controlled, for example, by the type and content of pH adjusting agents that may be used as needed.

[0147] [Electrical Conductivity] The electrical conductivity (EC) of the polishing composition according to each of the above embodiments is not particularly limited. Preferably, the lower limit of the EC of the polishing composition is 0.1 mS / cm or more, 0.5 mS / cm or more, or 1.0 mS / cm or more. Preferably, the upper limit of the EC of the polishing composition is 10.0 mS / cm or less, 5.0 mS / cm or less, or 3.0 mS / cm or less. Stability can be more sufficiently ensured within these ranges. Preferred examples of the EC range of the polishing composition include 0.1 mS / cm or more and 10.0 mS / cm or less, 0.5 mS / cm or more and 5.0 mS / cm or less, 1.0 mS / cm or more and 3.0 mS / cm or less, etc., but the EC range of the polishing composition is not limited to these. The EC of the polishing composition can be measured by an electrical conductivity meter. Details of the measurement method are described in the examples. The EC of the polishing composition can be controlled, for example, by the type and content of the ionic compound. The ionic compound is not particularly limited. Examples of ionic compounds include pH adjusters and electrical conductivity adjusters, which may be used as needed.

[0148] [Method for Manufacturing Polishing Compositions] The method for manufacturing the polishing compositions according to each of the above embodiments is not particularly limited. The polishing composition according to the first embodiment may be obtained, for example, by stirring and mixing modified abrasive grains, a compound that satisfies condition (1) and / or condition (2), and one or more components that may be optionally added. For example, the polishing composition according to Embodiments 1-2 above may be obtained, for example, by stirring and mixing anionic modified silica particles, a surfactant with logD greater than 0, an oxidizing agent, water, a pH adjuster if necessary, and one or more other components if necessary. For example, the method for manufacturing the polishing compositions according to Embodiments 1-3 above is not particularly limited. The polishing composition according to the first embodiment may be obtained, for example, by stirring and mixing surface cation-modified silica particles, a surfactant with logD greater than 0, an oxidizing agent, water, a pH adjuster if necessary, and one or more other components if necessary. For example, the polishing compositions according to Embodiments 1-4 above may be obtained by stirring and mixing silica particles chemically surface-modified with at least one silane coupling agent selected from the group consisting of silane coupling agents having amino groups and silane coupling agents having quaternary ammonium groups, a surfactant with logD greater than 0, an oxidizing agent, water, a pH adjuster if necessary, and one or more other components if necessary. For example, the polishing composition according to Embodiment 2-1 above may be obtained by stirring and mixing anionically modified silica particles, a compound shown in (I) and / or (II) above (for example, alkylphosphonic acid (salt) having 6 to 11 carbon atoms, etc.), an oxidizing agent, water, a pH adjuster if necessary, and one or more other components if necessary. In the method for producing the polishing compositions according to each of the above embodiments, the order of addition of each component is not particularly limited, but it is preferable to add the oxidizing agent immediately before polishing. The temperature when mixing each component is not particularly limited, but it is preferably 10°C to 40°C, and heating may be used to increase the dissolution rate. The mixing time is also not particularly limited.

[0149] [Object to be polished] The object to be polished using the polishing composition according to the first embodiment (object to be polished) and the object to be polished using the polishing composition according to the second embodiment (object to be polished) are not particularly limited. The object to be polished may consist of only one type of material or may contain two or more types of materials. The object to be polished preferably contains tungsten material, and more preferably contains tungsten material and materials other than tungsten material. The materials other than tungsten material are not particularly limited, but preferably contain titanium material and / or materials containing silicon and at least one selected from the group consisting of oxygen and nitrogen. The object to be polished using the polishing composition according to the first embodiment (object to be polished) and the object to be polished using the polishing composition according to the second embodiment (object to be polished) each preferably contain at least one type of part selected from the group consisting of a tungsten material part, part 1 below, and part 2 below. An object to be polished using the polishing composition according to the first embodiment (object to be polished) and an object to be polished using the polishing composition according to the second embodiment (object to be polished) each include a tungsten material portion and a non-tungsten material portion, wherein the non-tungsten material portion more preferably includes at least one portion selected from the group consisting of the following portion 1 and portion 2: portion 1: titanium material portion, portion 2: portion including silicon (Si) and at least one selected from the group consisting of oxygen (O) and nitrogen (N).

[0150] In each of the above embodiments, the tungsten material portion is preferably in the form of a film (i.e., a tungsten material film). The titanium material portion is preferably in the form of a film (i.e., a titanium material film). The portion containing silicon and at least one selected from the group consisting of oxygen and nitrogen is preferably in the form of a film (i.e., a film of a material containing silicon and at least one selected from the group consisting of oxygen and nitrogen).

[0151] In each of the above embodiments, the tungsten material is not particularly limited. Examples of tungsten materials include tungsten (metallic tungsten), tungsten alloys, and tungsten compounds. The tungsten compound is not particularly limited. Examples of tungsten compounds include tungsten oxide, tungsten nitride, and tungsten silicide. The tungsten (W) content in the tungsten material is preferably 10 mol% or more, more preferably 30 mol% or more, and even more preferably 50 mol% or more (upper limit 100 mol%), based on the total moles of the tungsten material. The tungsten material can be used alone or in combination of two or more. The tungsten material preferably contains at least one substance selected from the group consisting of the substances exemplified above. The tungsten material portion is preferably at least one substance selected from the group consisting of a tungsten portion (metallic tungsten portion), a tungsten alloy portion, and a tungsten compound portion, and is more preferably a tungsten portion.

[0152] In each of the above embodiments, the titanium material is not particularly limited. Examples of titanium materials include titanium (metallic titanium), titanium alloys, titanium compounds, etc. The titanium compound is not particularly limited. Examples of titanium compounds include titanium nitride, etc. The titanium (Ti) content in the titanium material is preferably 10 mol% or more, more preferably 30 mol% or more, and even more preferably 50 mol% or more (upper limit 100 mol%) based on the total mol of the titanium material. The titanium material can be used alone or in combination of two or more types. The titanium material preferably includes at least one selected from the group consisting of the substances exemplified above. The titanium material portion is preferably at least one selected from the group consisting of titanium portion (metallic titanium portion), titanium alloy portion, and titanium compound portion, more preferably at least one selected from the group consisting of titanium portion and titanium compound portion, and even more preferably at least one selected from the group consisting of titanium portion and titanium nitride portion. In one embodiment, the titanium material portion is more preferably titanium portion. In one embodiment, the titanium material portion is more preferably titanium nitride portion.

[0153] In each of the above embodiments, the portion comprising silicon and at least one selected from the group consisting of oxygen and nitrogen is made of a material comprising silicon and at least one selected from the group consisting of oxygen and nitrogen. The material comprising silicon and at least one selected from the group consisting of oxygen and nitrogen is not particularly limited. Examples of materials comprising silicon and at least one selected from the group consisting of oxygen and nitrogen include silicon oxide, silicon nitride, silicon oxynitride, etc. The silicon oxide is not particularly limited. Examples of silicon dioxide include TEOS-type silicon dioxide films (also simply referred to as "TEOS" in this specification) produced using tetraethyl orthosilicate as a precursor, HDP (High Density Plasma) films, USG (Undoped Silicone Glass) films, PSG (Phosphorus Silicone Glass) films, BPSG (Boron-Phosphoro Silicone Glass) films, and RTO (RaPID Thermal Oxidation) films. Materials containing silicon and at least one selected from the group consisting of oxygen and nitrogen can be used individually or in combination of two or more. It is preferable that the material containing silicon and at least one selected from the group consisting of oxygen and nitrogen includes at least one selected from the group consisting of the compounds exemplified above. In one embodiment, the portion comprising silicon and at least one selected from the group consisting of oxygen and nitrogen is preferably at least one selected from the group consisting of silicon oxide portion, silicon nitride portion and silicon oxynitride portion, more preferably at least one selected from the group consisting of silicon oxide portion and silicon nitride portion, and even more preferably at least one selected from the group consisting of TEOS portion and silicon nitride portion.

[0154] For example, when the object to be polished using the polishing composition according to each of the above embodiments (object to be polished) contains materials other than tungsten, it is preferable that the materials other than tungsten include at least one material selected from the group consisting of titanium, titanium nitride, silicon nitride, and silicon oxide. It is more preferable that the materials other than tungsten include at least one material selected from the group consisting of titanium, titanium nitride, and silicon nitride. It is even more preferable that the materials other than tungsten include at least one material selected from the group consisting of titanium and titanium nitride. It is particularly preferable that the materials other than tungsten include titanium nitride. The object to be polished may contain at least one material selected from the group consisting of titanium, silicon nitride, and silicon oxide. The materials other than tungsten may contain at least one material selected from the group consisting of titanium nitride and silicon oxide. The materials other than tungsten may contain at least one material selected from the group consisting of titanium and silicon oxide.

[0155] The material to be polished may also contain materials other than those listed above.

[0156] In one embodiment of the polishing composition, the ratio of the polishing speed of the tungsten material to the polishing speed of materials other than tungsten (the selectivity ratio of the tungsten material to materials other than tungsten) is not particularly limited. The polishing composition according to one embodiment preferably has the characteristic that the ratio of the polishing speed of the tungsten portion to the polishing speed of the titanium portion is preferably 2.0 or more, more preferably 5.0 or more, even more preferably 10.0 or more, even more preferably 30.0 or more, even more preferably 40.0 or more, even more preferably 50.0 or more, even more preferably 60.0 or more, even more preferably 70.0 or more, even more preferably 80.0 or more, even more preferably 90.0 or more, even more preferably 100.0 or more, even more preferably 200.0 or more, even more preferably 300.0 or more, even more preferably 350.0 or more, even more preferably 400.0 or more, even more preferably 500.0 or more, even more preferably 600.0 or more, even more preferably 700.0 or more, even more preferably 800.0 or more, and particularly preferably 1000.0 or more. The polishing composition according to one embodiment preferably has the characteristic that the ratio of the polishing speed of the tungsten portion to the polishing speed of the titanium nitride portion is preferably 6.0 or more, more preferably 8.0 or more, even more preferably 10.0 or more, even more preferably 15.0 or more, even more preferably 20.0 or more, even more preferably 25.0 or more, even more preferably 30.0 or more, even more preferably 40.0 or more, even more preferably 50.0 or more, even more preferably 70.0 or more, even more preferably 100.0 or more, even more preferably 120.0 or more, even more preferably 150.0 or more, even more preferably 200.0 or more, even more preferably 300.0 or more, even more preferably 350.0 or more, even more preferably 400.0 or more, even more preferably 500.0 or more, even more preferably 600.0 or more, even more preferably 700.0 or more, even more preferably 800.0 or more, and particularly preferably 1000.0 or more.The polishing composition according to one embodiment preferably has the characteristic that the ratio of the polishing speed of the tungsten portion to the polishing speed of the silicon nitride portion is preferably 5.0 or more, more preferably 10.0 or more, even more preferably 20.0 or more, even more preferably 30.0 or more, even more preferably 40.0 or more, even more preferably 50.0 or more, even more preferably 60.0 or more, even more preferably 65.0 or more, even more preferably 70.0 or more, even more preferably 80.0 or more, even more preferably 90.0 or more, even more preferably 100.0 or more, and particularly preferably 150.0 or more. The polishing composition according to one embodiment preferably has the characteristic that the ratio of the polishing speed of the tungsten portion to the polishing speed of the silicon oxide portion is preferably 1.5 or more, more preferably 3.0 or more, even more preferably 4.0 or more, even more preferably 5.0 or more, even more preferably 8.0 or more, even more preferably 10.0 or more, even more preferably 20.0 or more, and particularly preferably 50.0 or more. The polishing composition according to one embodiment preferably has any of the above characteristics when polished using a polyurethane pad having concentric grooves and / or grid-like grooves. The polishing composition according to one embodiment preferably has any of the above characteristics when polished using a polyurethane pad having grid-like grooves. The polishing composition according to one embodiment preferably has any of the above characteristics when polished using a polyurethane pad having concentric grooves and grid-like grooves. Examples of polyurethane pads having concentric grooves include Nitta DuPont's rigid polyurethane pad IC1010. Examples of polyurethane pads having concentric grooves and grid-like grooves include Nitta DuPont's rigid polyurethane pad IC1000 XY-k groove.

[0157] <Polishing Method and Method for Manufacturing Semiconductor Substrate> Another aspect of the present invention relates to a polishing method comprising polishing an object to be polished using a polishing composition according to the first aspect or a polishing composition according to the second aspect. According to the polishing method of this aspect, at least one means selected from the group consisting of means that can achieve a high effect of suppressing the polishing speed for titanium materials, and means that improve the selectivity ratio of tungsten materials to materials other than tungsten materials while achieving a sufficient polishing speed for tungsten materials. It is preferable that the polishing method of this aspect can improve the selectivity ratio of tungsten materials to materials other than tungsten materials while achieving a sufficient polishing speed for tungsten materials. It is more preferable that the polishing method of this aspect can achieve a high effect of suppressing the polishing speed for titanium materials, and improve the selectivity ratio of tungsten materials to materials other than tungsten materials while achieving a sufficient polishing speed for tungsten materials.

[0158] The object to be polished in this embodiment is also described in the same way as the object to be polished to which the polishing composition according to each embodiment described above is applied. A polishing method according to one embodiment preferably includes polishing an object to be polished which includes a tungsten material portion and at least one portion selected from the group consisting of portion 1 and portion 2 below, using the polishing composition according to the first embodiment or the polishing composition according to the second embodiment. A polishing method according to one embodiment more preferably includes polishing an object to be polished which includes a tungsten material portion and at least one portion selected from the group consisting of portion 1 and portion 2 below, using the polishing composition according to the first embodiment or the polishing composition according to the second embodiment; portion 1: titanium material portion, portion 2: portion consisting of silicon (Si) and at least one selected from the group consisting of oxygen (O) and nitrogen (N).

[0159] In one embodiment of the polishing composition, the ratio of the polishing speed of the tungsten material to the polishing speed of materials other than tungsten (the selection ratio of the tungsten material to materials other than tungsten) is not particularly limited. In one embodiment of the polishing method, it is preferable that the tungsten material portion includes a tungsten portion and satisfies at least one condition selected from the group consisting of (S1), (S2), (S3), and (S4) below. (S1) The portion 1 includes a titanium portion, and the ratio of the polishing speed of the tungsten portion to the polishing speed of the titanium portion is preferably 2.0 or more, more preferably 5.0 or more, even more preferably 10.0 or more, even more preferably 30.0 or more, even more preferably 40.0 or more, even more preferably 50.0 or more, even more preferably 60.0 or more, even more preferably 70.0 or more, even more preferably 80.0 or more, even more preferably 90.0 or more, even more preferably 100.0 or more, even more preferably 200.0 or more, even more preferably 300.0 or more, even more preferably 350.0 or more, even more preferably 400.0 or more, even more preferably 500.0 or more, even more preferably 600.0 or more, even more preferably 700.0 or more, even more preferably 800.0 or more, and especially preferably 1000.0 or more.(S2) The portion 1 includes a titanium nitride portion, and the ratio of the polishing speed of the tungsten portion to the polishing speed of the titanium nitride portion is preferably 6.0 or more, more preferably 8.0 or more, even more preferably 10.0 or more, even more preferably 15.0 or more, even more preferably 20.0 or more, even more preferably 25.0 or more, even more preferably 30.0 or more, even more preferably 40.0 or more, even more preferably 50.0 or more, even more preferably 70.0 or more, even more preferably 100.0 or more, even more preferably 120.0 or more, even more preferably 150.0 or more, even more preferably 200.0 or more, even more preferably 300.0 or more, even more preferably 350.0 or more, even more preferably 400.0 or more, even more preferably 500.0 or more, even more preferably 600.0 or more, even more preferably 700.0 or more, even more preferably 800.0 or more, and especially preferably 1000.0 or more. (S3) The portion 2 includes a silicon nitride portion, and the ratio of the polishing speed of the tungsten portion to the polishing speed of the silicon nitride portion is preferably 5.0 or more, more preferably 10.0 or more, even more preferably 20.0 or more, even more preferably 30.0 or more, even more preferably 40.0 or more, even more preferably 50.0 or more, even more preferably 60.0 or more, even more preferably 65.0 or more, even more preferably 70.0 or more, even more preferably 80.0 or more, even more preferably 90.0 or more, particularly preferably 100.0 or more, and especially preferably 150.0 or more. (S4) The portion 2 contains a silicon oxide portion, and the ratio of the polishing speed of the tungsten portion to the polishing speed of the silicon oxide portion is preferably 1.5 or more, more preferably 3.0 or more, even more preferably 4.0 or more, even more preferably 5.0 or more, even more preferably 8.0 or more, even more preferably 10.0 or more, even more preferably 20.0 or more, and particularly preferably 50.0 or more.

[0160] In one embodiment, it is preferable that in (S1) the ratio of the polishing speed of the tungsten portion to the polishing speed of the titanium portion is 30.0 or more, in (S2) the ratio of the polishing speed of the tungsten portion to the polishing speed of the titanium nitride portion is 30.0 or more, in (S3) the ratio of the polishing speed of the tungsten portion to the polishing speed of the silicon nitride portion is 30.0 or more, and in (S4) the ratio of the polishing speed of the tungsten portion to the polishing speed of the silicon oxide portion is 4.0 or more. In one embodiment, it is more preferable that in (S1) the ratio of the polishing speed of the tungsten portion to the polishing speed of the titanium portion is 30.0 or more, in (S2) the ratio of the polishing speed of the tungsten portion to the polishing speed of the titanium nitride portion is 30.0 or more, in (S3) the ratio of the polishing speed of the tungsten portion to the polishing speed of the silicon nitride portion is 30.0 or more, and in (S4) the ratio of the polishing speed of the tungsten portion to the polishing speed of the silicon oxide portion is 10.0 or more.

[0161] In one embodiment, when polishing with a polyurethane pad having concentric grooves and / or grid-like grooves, it is preferable that the ratio of polishing speeds is within any of the above ranges. In one embodiment, when polishing with a polyurethane pad having grid-like grooves, it is preferable that the ratio of polishing speeds is within any of the above ranges. In one embodiment, when polishing with a polyurethane pad having concentric grooves and grid-like grooves, it is preferable that the ratio of polishing speeds is within any of the above ranges.

[0162] The polishing apparatus is not particularly limited. Examples of polishing apparatus include general polishing apparatuses that have a holder for holding a substrate containing the object to be polished, a motor with adjustable rotation speed, and a polishing platen to which a polishing pad (abrasive cloth) can be attached.

[0163] The polishing pad is not particularly limited. Examples of materials for the polishing pad include nonwoven fabric, polyurethane, and porous fluororesin. It is preferable that the polishing pad has grooves to allow the polishing liquid to accumulate.

[0164] The polishing conditions are not particularly limited. For example, the rotational speed (rotational speed) of the polishing platen is 10 rpm (0.17 s). －１ ) or more 500rpm (8.33s －１ Preferably, the carrier rotation speed (rotational speed) is 10 rpm (0.17 s). －１ ) or more 500rpm (8.33s －１ ) or less is preferable. For example, the pressure applied to the substrate containing the object to be polished (polishing pressure) is preferably 0.1 psi (0.7 kPa) or more and 10 psi (68.9 kPa) or less, and more preferably 0.5 psi (3.4 kPa) or more and 10 psi (68.9 kPa) or less. The method of supplying the polishing composition to the polishing pad is not particularly limited, and for example, a method of continuously supplying it with a pump or the like may be employed. There is no limit to the amount supplied, but it is preferable that the surface of the polishing pad is always covered with the polishing composition. The supply rate of the polishing composition is not particularly limited. For example, the supply rate of the polishing composition is preferably 50 mL / min or more and 500 mL / min or less. The polishing time is also not particularly limited, and for example, a time that can achieve the desired polishing can be appropriately selected. If necessary, a pad conditioner may be brought into contact with the surface of the polishing pad to condition the surface of the polishing pad while polishing.

[0165] After polishing is complete, the substrate containing the polished object may be washed with running water, and any water droplets adhering to the substrate may be removed and dried using a spin dryer or similar device.

[0166] Another further aspect of the present invention relates to a method for manufacturing a semiconductor substrate, comprising polishing a substrate containing an object to be polished by the polishing method according to the above aspect. The manufacturing method according to this aspect provides at least one means selected from the group consisting of means that can achieve a high effect of suppressing the polishing speed of titanium material, and means that improve the selectivity ratio of tungsten material to materials other than tungsten material while achieving a sufficient polishing speed for tungsten material. The manufacturing method according to this aspect is preferably able to improve the selectivity ratio of tungsten material to materials other than tungsten material while achieving a sufficient polishing speed for tungsten material. The manufacturing method according to this aspect is more preferably able to achieve a high effect of suppressing the polishing speed of titanium material, and improve the selectivity ratio of tungsten material to materials other than tungsten material while achieving a sufficient polishing speed for tungsten material.

[0167] The object to be polished in this embodiment is also the same as described for the object to be polished to which the polishing composition according to the above embodiment is applied. A method for manufacturing a semiconductor substrate according to one embodiment preferably includes polishing a substrate including an object to be polished which includes a tungsten material portion and at least one portion selected from the group consisting of portion 1 and portion 2, by the polishing method according to the above embodiment. A method for manufacturing a semiconductor substrate according to one embodiment more preferably includes polishing a substrate including an object to be polished which includes a tungsten material portion and at least one portion selected from the group consisting of portion 1 and portion 2, by the polishing method according to the above embodiment.

[0168] While embodiments of the present invention have been described in detail, these are descriptive and illustrative, and not limiting, and it is clear that the scope of the present invention should be interpreted by the appended claims.

[0169] The present invention includes, but is not limited to, the following embodiments and forms: [1] A polishing composition for use in polishing an object to be polished, comprising anionically modified silica particles, a surfactant having a water-octanol partition coefficient logD greater than 0 at the pH of the polishing composition, an oxidizing agent, and water, having a pH of 1.0 to 6.0, and comprising a tungsten material portion and at least one portion selected from the group consisting of the following portion 1 and portion 2; portion 1: titanium material portion, portion 2: portion comprising silicon and at least one selected from the group consisting of oxygen and nitrogen; [2] The polishing composition according to [1], wherein the surfactant comprises a compound comprising an alkyl group and at least one selected from the group consisting of phosphorus and sulfur; [3] The polishing composition according to [1] or [2], wherein the surfactant comprises a compound comprising an alkyl group and phosphorus, and a compound comprising an alkyl group and sulfur; [4] The surfactant comprises at least one compound selected from the group consisting of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms and salts of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms; A polishing composition according to any one of [1] to [3], comprising: at least one compound selected from the group consisting of alkyl sulfonic acid (salt) having 6 or more carbon atoms, alkylbenzene sulfonic acid (salt) having an alkyl group having 6 or more carbon atoms, alkyl sulfate ester having an alkyl group having 6 or more carbon atoms, and a salt of an alkyl sulfate ester having an alkyl group having 6 or more carbon atoms; [5] A polishing composition according to any one of [1] to [4], wherein the surfactant comprises an alkylphosphonic acid (salt) having 6 to 11 carbon atoms; [6] A polishing composition according to any one of [1] to [5], wherein the pH is 1.0 or more and 5.0 or less; [7] A polishing composition comprising anionic modified silica particles, an oxidizing agent, and water, satisfying (I) below, (II) below, or both, and having a pH of 1.0 or more and 5.0 or less: (I) The polishing composition comprises an alkylphosphonic acid (salt) having 6 to 11 carbon atoms;(II) The polishing composition comprises: at least one compound selected from the group consisting of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms and salts of alkyl phosphate esters having an alkyl group having 6 or more carbon atoms; and at least one compound selected from the group consisting of alkyl sulfonic acid (salt) having 6 or more carbon atoms, alkylbenzene sulfonic acid (salt) having an alkyl group having 6 or more carbon atoms, alkyl sulfate ester having an alkyl group having 6 or more carbon atoms and salts of alkyl sulfate ester having an alkyl group having 6 or more carbon atoms; [8] The polishing composition according to [7] that satisfies (I) above; where [8] above can also be said to be [8'] below; [8'] A polishing composition comprising anion-modified silica particles, alkylphosphonic acid (salt) having 6 to 11 carbon atoms, an oxidizing agent and water, and having a pH of 1.0 to 5.0; [9] The polishing composition according to [7] or [8] that satisfies (II) above;

[10] The polishing composition according to any one of [1] to [9], wherein the water-octanol partition coefficient logD at pH of the polishing composition of the surfactant or the alkylphosphonic acid (salt) is greater than 0 and 5.0 or less;

[11] The polishing composition according to any one of [1] to

[10] , wherein the anion-modified silica particles include sulfonic acid-modified silica particles;

[12] The polishing composition according to any one of [1] to

[11] , wherein the content of the anion-modified silica particles is 0.1% by mass or more and 10% by mass or less based on the total mass of the polishing composition;

[13] The polishing composition according to any one of [1] to

[12] , wherein the average secondary particle diameter of the anion-modified silica particles is 10 nm or more and 100 nm or less;

[14] The polishing composition according to any one of [1] to

[13] , further comprising a sulfonic acid (salt) group-containing polymer;

[15] The polishing composition according to

[14] , wherein the content of the sulfonic acid (salt) group-containing polymer is 0.004% by mass or more and 0.010% by mass or less based on the total mass of the polishing composition;

[16] The polishing composition according to any one of [1] to

[13] , which does not contain a sulfonic acid (salt) group-containing polymer;

[17] A polishing method comprising polishing an object to be polished, which includes a tungsten material portion and at least one portion selected from the group consisting of the following portion 1 and portion 2, using a polishing composition described in any of [1] to

[16] ; portion 1: titanium material portion, portion 2: portion including silicon and at least one selected from the group consisting of oxygen and nitrogen;

[18] The polishing method according to

[17] , wherein the tungsten material portion includes a tungsten portion and satisfies at least one condition selected from the group consisting of the following (S1), (S2), (S3), and (S4); (S1) portion 1 includes a titanium portion and the ratio of the polishing speed of the tungsten portion to the polishing speed of the titanium portion is 30.0 or more; (S2) portion 1 includes a titanium nitride portion and the ratio of the polishing speed of the tungsten portion to the polishing speed of the titanium nitride portion is 30.0 or more. (S3) The portion 2 includes a silicon nitride portion, and the ratio of the polishing speed of the tungsten portion to the polishing speed of the silicon nitride portion is 30.0 or more; (S4) The portion 2 includes a silicon oxide portion, and the ratio of the polishing speed of the tungsten portion to the polishing speed of the silicon oxide portion is 10.0 or more; A method for manufacturing a semiconductor substrate, comprising polishing a substrate including the tungsten material portion and at least one portion selected from the group consisting of portion 1 and portion 2 by the polishing method described in

[19] ,

[17] , or

[18] .

[0170] The present invention includes, but is not limited to, the following embodiments and forms:

[20] A polishing composition for use in polishing an object to be polished, comprising surface-cationically modified silica particles, a surfactant having a water-octanol partition coefficient logD greater than 0 at the pH of the polishing composition, an oxidizing agent, and water, wherein the pH is 1.0 or higher and 6.0 or lower, and the object comprises a tungsten material portion and at least one portion selected from the group consisting of the following portion 1 and portion 2; portion 1: titanium material portion, portion 2: portion comprising silicon and at least one selected from the group consisting of oxygen and nitrogen;

[21] The polishing composition according to

[20] , wherein the surface-cationically modified silica particles are silica particles chemically surface-modified with at least one silane coupling agent selected from the group consisting of silane coupling agents having amino groups and silane coupling agents having quaternary ammonium groups;

[22] The polishing composition according to

[20] or

[21] , wherein the content of the oxidizing agent is greater than 0.005% by mass of the total mass of the polishing composition;

[23] The polishing composition according to any one of

[20] to

[22] , wherein the pH is 1.0 or more and 3.0 or less;

[24] The polishing composition comprising silica particles chemically surface-modified with at least one silane coupling agent selected from the group consisting of silane coupling agents having amino groups and silane coupling agents having quaternary ammonium groups, a surfactant having a water-octanol partition coefficient logD greater than 0 at the pH of the polishing composition, an oxidizing agent, and water, wherein the content of the oxidizing agent is greater than 0.005% by mass of the total mass of the polishing composition, and the pH is 1.0 or more and 3.0 or less;

[25] The polishing composition according to any one of

[20] to

[24] , wherein the surfactant comprises a compound comprising an alkyl group and at least one selected from the group consisting of phosphorus and sulfur;

[26] The polishing composition according to any one of

[20] to

[25] , wherein the logD is greater than 0 and less than 3.00;

[27] The polishing composition according to any one of

[20] to

[26] , further comprising a pH adjusting agent;A polishing method comprising polishing an object to be polished, which includes a tungsten material portion and at least one portion selected from the group consisting of the following portion 1 and portion 2, using a polishing composition described in any of

[28]

[20] to

[27] ; portion 1: titanium material portion, portion 2: portion including silicon and at least one selected from the group consisting of oxygen and nitrogen;

[29] The polishing method according to

[28] , wherein the tungsten material portion includes a tungsten portion and satisfies at least one condition selected from the group consisting of the following (S1), (S2), (S3), and (S4); (S1) portion 1 includes a titanium portion and the ratio of the polishing speed of the tungsten portion to the polishing speed of the titanium portion is 30.0 or more; (S2) portion 1 includes a titanium nitride portion and the ratio of the polishing speed of the tungsten portion to the polishing speed of the titanium nitride portion is 30.0 or more. (S3) The portion 2 includes a silicon nitride portion, and the ratio of the polishing speed of the tungsten portion to the polishing speed of the silicon nitride portion is 30.0 or more; (S4) The portion 2 includes a silicon oxide portion, and the ratio of the polishing speed of the tungsten portion to the polishing speed of the silicon oxide portion is 4.0 or more; A method for manufacturing a semiconductor substrate, comprising polishing a substrate including the tungsten material portion and at least one portion selected from the group consisting of portion 1 and portion 2 by the polishing method described in

[30] ,

[28] , or

[29] .

[0171] The present invention will be described in more detail using the following examples and comparative examples. However, the technical scope of the present invention is not limited to the following examples. Unless otherwise specified, "%" and "parts" mean "mass%" and "parts by mass," respectively.

[0172] <Average Primary Particle Diameter of Silica Particles> The average primary particle diameter of silica particles was calculated from the specific surface area of ​​silica particles measured by the BET method using a "Flow Sorb II 2300" manufactured by Micromerities, Inc., and the density of silica particles.

[0173] <Average Secondary Particle Diameter of Silica Particles> The average secondary particle diameter of silica particles was measured as the volume-average particle diameter (volume-based arithmetic mean diameter; Mv) using a dynamic light scattering particle size and particle size distribution device UPA-UT151 (manufactured by Nikkiso Co., Ltd.). The average secondary particle diameter of silica particles in the polishing composition was evaluated by measuring the polishing composition using a dynamic light scattering particle size and particle size distribution device UPA-UT151 (manufactured by Nikkiso Co., Ltd.).

[0174] <Average Aspect Ratio of Silica Particles> For silica particles in the polishing composition, scanning electron microscope (SEM) images were taken using a SU8000 (manufactured by Hitachi High-Technologies Corporation) at a magnification that captured between 100 and 1000 particles. For the smallest rectangle circumscribing each secondary particle in the captured SEM image, the values ​​of the long side and short side were measured, and the ratio of the calculated long side value to the short side value (long side value / short side value) was calculated as the aspect ratio. The average of the aspect ratios of all particles in the captured SEM image was calculated as the average aspect ratio of the silica particles.

[0175] <Silanol group density of silica particles> Silanol group density per unit surface area of ​​silica particles (unit: particles / nm) ２ The parameters were measured or calculated using the following measurement or calculation methods, and then calculated using the method described below.

[0176] In the following formula, C represents the total mass of silica particles, and S represents the BET specific surface area of ​​the silica particles. For the specific evaluation method, first, 1.50 g of silica particles were placed in a 200 ml beaker, 100 ml of pure water was added to form a slurry, and then 30 g of sodium chloride was added and dissolved. Next, 1N hydrochloric acid was added to adjust the pH of the slurry to 3.0-3.5, and then pure water was added until the slurry reached 150 ml.

[0177] The slurry was titrated using an automatic titrator (COM-1700, manufactured by Hiranuma Sangyo Co., Ltd.) at 25°C to adjust the pH to 4.0 using 0.1N sodium hydroxide. Furthermore, the volume V [L] of 0.1N sodium hydroxide solution required to raise the pH from 4.0 to 9.0 by pH titration was measured. The silanol group density was calculated using the following formula.

[0178] ρ = (c × V × N) Ａ ) / (C×S) In the above formula, ρ is the density of silanol groups (groups / nm) ２ ) represents; c represents the concentration (mol / L) of the sodium hydroxide solution used in the titration; V represents the volume (L) of sodium hydroxide solution required to raise the pH from 4.0 to 9.0; N Ａ is Avogadro's number (particles / mol); C is the total mass (solid content) (g) of silica particles; S is the BET specific surface area (nm) of the silica particles. ２ This represents the BET specific surface area ( / g). The BET specific surface area used was the value of the specific surface area of ​​silica particles measured by the BET method using "MacsorbHM model-1210" manufactured by Mountec Co., Ltd.

[0179] <Zeta Potential of Silica Particles> The zeta potential (ζ potential) of silica particles in the polishing composition was measured by subjecting the polishing composition to a Malvern Panalytical Zetasizer Nano at a measurement temperature of 25°C using the laser Doppler method (electrophoretic light scattering measurement method), and the obtained data was calculated by analyzing it using Smoluchowski's formula.

[0180] <pH of the polishing composition> The pH of the polishing composition was determined using a glass electrode type hydrogen ion concentration indicator (model number: F-72, manufactured by Horiba, Ltd.). After three-point calibration using standard buffers (phthalate pH buffer pH: 4.01 (25°C), neutral phosphate pH buffer pH: 6.86 (25°C), carbonate pH buffer pH: 10.01 (25°C)), the glass electrode was placed in the polishing composition, and the pH value after stabilization for 2 minutes or more was taken as the pH value.

[0181] <Electrical Conductivity of Polishing Composition> The electrical conductivity (EC) of the polishing composition was measured using a benchtop electrical conductivity meter (manufactured by Horiba, Ltd., model number: DS-72 LAQUA®).

[0182] <LogD of Compounds> For the compounds described later, such as surfactants, the logD values ​​used were calculated using ACD / LogD, a chemical calculation software from Advanced Chemistry Development (ACD).

[0183] <Amount of compound adsorbed onto the quartz crystal microbalance electrode at the pH of the polishing composition> The amount of compound adsorbed onto the quartz crystal microbalance electrode at the pH of the polishing composition was evaluated by the following measurement method A.

[0184] [Evaluation Method A] A QCM-D measuring device, Q-Sense Pro (manufactured by Biolin Scientific), was used as the measuring device. 180 μL of pure water was placed in the device and stabilized at 25°C. Then, a 0.96 g / kg aqueous solution of the compound (compound to be evaluated) was prepared. Then, using a pH adjusting agent (nitric acid to decrease pH, ammonia water to increase pH), the pH value of this aqueous solution was adjusted to the desired value to obtain the evaluation aqueous solution. The electrode (quartz crystal microbalance electrode) was immersed in the obtained evaluation aqueous solution, and the evaluation aqueous solution was flowed at a flow rate of 20 μL / min for 20 minutes. Then, the electrode (quartz crystal microbalance electrode) was immersed in deionized water (DIW), and deionized water (DIW) was flowed for 30 minutes. After that, the amount of adsorption of the compound (compound to be evaluated) per unit area of ​​the electrode (quartz crystal microbalance electrode) (unit: ng / cm²) was measured. ２ The pH was measured. Here, the desired pH is the same value as the pH of the polishing composition being evaluated.

[0185] The electrodes (quartz crystal microbalance electrodes) used were Ti electrodes oxidized with hydrogen peroxide. Specifically, Ti electrodes oxidized with hydrogen peroxide using the method described below were used. The amount of compound adsorbed onto the electrodes serves as an indicator of the amount of compound adsorbed onto the hydrophilic material contained in the polished object, and the amount of compound adsorbed onto the electrodes serves as an indicator of the amount of compound adsorbed onto the hydrophobic material contained in the polished object.

[0186] (Method for preparing electrodes) 1.5% by mass hydrogen peroxide solution was prepared. Then, using a pH adjusting agent (nitric acid), the pH of this hydrogen peroxide solution was adjusted to 1.9 to obtain an aqueous solution. Then, the Ti sensor of the QCM-D measuring device was immersed in the obtained aqueous solution for 1 minute, and the surface of the Ti sensor was exposed to TiO ２ It was changed to TiO. ２ The modified Ti sensor was washed with DIW (deionized water) and dried.

[0187] <Water contact angle on the surface of titanium nitride after immersion in polishing composition> The water contact angle on the surface of titanium nitride after immersion in polishing composition was evaluated by the following measurement method B.

[0188] [Measurement Method B] By using the polishing composition described below and polishing the surface of the object to be polished under the polishing conditions described below, an oxide film (TiO) is removed from the surface of the object to be polished. ２ The film was removed to obtain a polished object. The following substrate was used as the object to be polished: a silicon wafer on which a 3600 Å thick titanium nitride (TiN) film was formed (a 300 mm blanket wafer cut into 30 mm x 30 mm chips, manufactured by Advance Materials Technology Co., Ltd.).

[0189] (Polishing composition used in measurement method B) A polishing composition was prepared by dissolving and / or dispersing abrasive grains A (sulfonic acid-modified colloidal silica), hydrogen peroxide, and nitric acid in a dispersion medium. Here, the amount of abrasive grains added (content) relative to the total mass of the polishing composition to be manufactured was 1.6% by mass, and the amount of hydrogen peroxide added (content) relative to the total mass of the polishing composition to be manufactured was 0.3% by mass. Nitric acid was added so that the pH of the polishing composition became 2. In this way, the polishing composition to be used in measurement method B was manufactured.

[0190] (Polishing equipment and conditions) Polishing machine: Benchtop polishing machine manufactured by Nippon Engis Co., Ltd. (Product name: EJ-380IN-CH) Pad: Hard polyurethane pad IC1000 XY-k groove manufactured by Nitta DuPont Co., Ltd. Conditioner: Diamond pad conditioner (manufactured by Noritake Co., Ltd., SDT-100) Polishing pressure: 1.4 psi (1 psi = 6894.76 Pa) Polishing plate rotation speed: 60 rpm (60 rpm = 1 s －１ Carrier rotation speed: 60 rpm. Supply of polishing composition: flow-through. Supply amount (supply speed) of polishing composition: 100 mL / min. Polishing time: 15 seconds.

[0191] (Preparation of Measurement Samples) In preparing the polishing composition to be evaluated for water contact angle, the measurement samples were prepared in the same manner as the manufacturing method of the polishing composition to be evaluated, except that abrasive grains were not added.

[0192] (Measurement of water contact angle) Oxide film (TiO) on the surface of the object to be polished ２ After removing the film, the obtained polished polishing composition was immersed in 100 mL of a sample for measurement for 10 minutes. The polished object was then rinsed with pure water for 30 seconds, and the polished object was dried by blowing dry air onto it. Subsequently, the contact angle of pure water with respect to the surface of the polished object (TiN layer surface) was measured using a contact angle meter (CAX-200: manufactured by Kyowa Interface Science Co., Ltd.) on the dried polished object.

[0193] <Materials to be polished> The following materials were used for the following evaluations: • W(A): Silicon wafer with a 4000 Å thick tungsten (W) film (coupon cut from a 300 mm blanket wafer into 60 mm x 60 mm chips, manufactured by Advance Materials Technology Co., Ltd.); • TiN(A): Silicon wafer with a 3600 Å thick titanium nitride (TiN) film (coupon cut from a 300 mm blanket wafer into 60 mm x 60 mm chips, manufactured by Advance Materials Technology Co., Ltd.); • W(B): Silicon wafer with a 4000 Å thick tungsten (W) film (300 mm, blanket wafer, manufactured by Advance Materials Technology Co., Ltd.); • Ti(B): Silicon wafer with a 3000 Å thick titanium (Ti) film (300 mm, blanket wafer, manufactured by Advance Materials Technology Co., Ltd.); - TiN(B): Silicon wafer (300 mm, blanket wafer; manufactured by Advance Materials Technology Co., Ltd.) with a 3600 Å thick titanium nitride (TiN) film formed on it; - SiN(B): Silicon wafer (300 mm, blanket wafer; manufactured by Advantech Co., Ltd.) with a 2500 Å thick silicon nitride (SiN) film formed on it; - TEOS(B): Silicon wafer (300 mm, blanket wafer; manufactured by Advantech Co., Ltd.) with a 10000 Å thick TEOS-type silicon oxide film (TEOS) formed on it; - SiN(C): Silicon wafer (300 mm, blanket wafer) with a 2500 Å thick silicon nitride (SiN) film formed on it. Note that SiN(C) is manufactured by Advantech Co., Ltd.

[0194] <Polishing Conditions> In the following evaluations, the object to be polished was polished under one of the following polishing conditions.

[0195] [Polishing Conditions 1] (Polishing equipment and polishing conditions) Polishing machine: Benchtop polishing machine manufactured by Nippon Engis Co., Ltd. (Product name: EJ-380IN-CH) Pad: Hard polyurethane pad IC1010 manufactured by Nitta DuPont Co., Ltd. Polishing pressure: 3 psi (1 psi = 6894.76 Pa) Polishing plate rotation speed: 60 rpm (60 rpm = 1 s) －１Carrier rotation speed: 60 rpm. Supply of polishing composition: flow-through. Supply amount (supply speed) of polishing composition: 100 mL / min. Polishing time: 30 seconds.

[0196] [Polishing Conditions 2] (Polishing equipment and polishing conditions) Polishing machine: FREX300E manufactured by Ebara Corporation Pad: Nitta DuPont Co., Ltd. hard polyurethane pad IC1000 XY-k groove Polishing pressure: 3 psi Polishing platen rotation speed: 90 rpm Carrier rotation speed: 90 rpm Supply of polishing composition: flow-through polishing composition supply amount (supply speed): 300 mL / min, Polishing time: 30 seconds.

[0197] [Polishing Conditions 3] (Polishing equipment and polishing conditions) Polishing machine: FREX300E manufactured by Ebara Corporation Pad: Nitta DuPont IC1010 hard polyurethane pad Polishing pressure: 3 psi Polishing plate rotation speed: 90 rpm Carrier rotation speed: 90 rpm Supply of polishing composition: flow-through polishing composition supply amount (supply speed): 300 mL / min, Polishing time: 30 seconds.

[0198] [Polishing Conditions 4] (Polishing equipment and polishing conditions) Polishing machine: FREX300E manufactured by Ebara Corporation Pad: Nitta DuPont IC1010 hard polyurethane pad Conditioner: Diamond pad conditioner (3M, A165) Polishing pressure: 3 psi Polishing plate rotation speed: 90 rpm Carrier rotation speed: 90 rpm Supply of polishing composition: Flow-through polishing composition supply amount (supply speed): 300 mL / min, Polishing time: 30 seconds.

[0199] <Evaluation of Polishing Speed> In the following evaluations, the polishing speed was evaluated as follows:

[0200] The polishing speeds for silicon nitride films and TEOS-type silicon oxide films were calculated by determining the thickness before and after polishing using an optical film thickness measuring instrument (RE-3500: manufactured by SCREEN Corporation), and then dividing [(thickness before polishing) - (thickness after polishing)] by the polishing time.

[0201] The polishing speeds for the tungsten film, titanium film, and titanium nitride film were calculated by dividing the thickness before and after polishing by the polishing time using a sheet resistance meter (VR120 / 08SD: manufactured by Kokusai Electric Semiconductor Service Co., Ltd.) based on the DC four-probe method, which divides [(thickness before polishing) - (thickness after polishing)].

[0202] <Explanation of Tables> In Tables 2, 4, 6, 8, 10, and 13, tungsten films are indicated by "W", titanium films by "Ti", titanium nitride films by "TiN", silicon nitride films by "SiN", and TEOS-type silicon oxide films by "TEOS".

[0203] In Tables 2, 4, 6, 8, 10, and 13, the selectivity ratio of the tungsten film to the TEOS-type silicon oxide film is shown as "W / TEOS", the selectivity ratio of the tungsten film to the silicon nitride film is shown as "W / SiN", the selectivity ratio of the tungsten film to the titanium nitride film is shown as "W / TiN", and the selectivity ratio of the tungsten film to the titanium film is shown as "W / Ti".

[0204] 1 Å = 0.1 nm.

[0205] <Preparation of Abrasive Grains> [Abrasive Grain A: Production of Sulfonic Acid Modified Colloidal Silica] Colloidal silica with an average primary particle diameter of 34 nm and an average secondary particle diameter of 70 nm was prepared using the method described in “Sulfonic acid-functionalized silica through quantitative oxidation of thiol groups”, Chem. Commun. 246-247 (2003).

[0206] [Preparation of unmodified colloidal silica for abrasive grain B] Colloidal silica was prepared using the anionic unmodified version of abrasive grain A (average primary particle size: 34 nm, average secondary particle size: 70 nm).

[0207] [Abrasive grain C: Production of sulfonic acid-modified colloidal silica] Colloidal silica with an average primary particle diameter of 14 nm and an average secondary particle diameter of 33 nm was prepared using the method described in “Sulfonic acid-functionalized silica through quantitative oxidation of thiol groups”, Chem. Commun. 246-247 (2003).

[0208] [Abrasive grain A-1: ​​Production of surface cation-modified colloidal silica] Colloidal silica stock solution (average primary particle diameter: 23 nm, average secondary particle diameter: 50 nm, silanol group density: 3.67 groups / nm) ２ A 3-aminopropyltriethoxysilane aqueous solution with a concentration of 3.35 mmol / L was added to a 20% by mass solution (dispersion medium: water) as an aqueous solution of a silane coupling agent to obtain a dispersion of surface-modified cationized colloidal silica (average secondary particle size 50 nm; 10% by mass).

[0209] [Abrasive grain B-1: Production of surface cation-modified colloidal silica] Colloidal silica stock solution (average primary particle diameter: 35 nm, average secondary particle diameter: 70 nm, silanol group density: 5.70 groups / nm) ２ A 3-aminopropyltriethoxysilane aqueous solution with a concentration of 4.36 mmol / L was added to a 20% by mass solution (dispersion medium: water) as an aqueous solution of a silane coupling agent to obtain a dispersion of surface-modified cationized colloidal silica (average secondary particle size 70 nm; 10% by mass).

[0210] [Abrasive grain C-1: Production of surface cation-modified colloidal silica] Colloidal silica stock solution (average primary particle diameter: 16 nm, average secondary particle diameter: 35 nm, silanol group density: 2.93 groups / nm) ２ A 3-aminopropyltriethoxysilane aqueous solution with a concentration of 4.73 mmol / L was added to a 20% by mass solution (dispersion medium: water) as an aqueous solution of a silane coupling agent to obtain a dispersion of surface-modified cationized colloidal silica (average secondary particle size 35 nm; 10% by mass).

[0211] [Abrasive grain D-1: Production of surface cation-modified colloidal silica] Colloidal silica stock solution (average primary particle diameter: 33 nm, average secondary particle diameter: 52 nm, silanol group density: 5.97 groups / nm) ２ A 3-aminopropyltriethoxysilane aqueous solution with a concentration of 4.87 mmol / L was added to a 20% by mass solution (dispersion medium: water) as an aqueous solution of a silane coupling agent to obtain a dispersion of surface-modified cationized colloidal silica (average secondary particle size 52 nm; 10% by mass).

[0212] [Abrasive grain E-1: Production of surface cation-modified colloidal silica] Colloidal silica stock solution (average primary particle diameter: 19 nm, average secondary particle diameter: 25 nm, silanol group density: 3.22 groups / nm) ２ A 3-aminopropyltriethoxysilane aqueous solution with a concentration of 4.46 mmol / L was added to a 20% by mass solution (dispersion medium: water) as an aqueous solution of a silane coupling agent to obtain a dispersion of surface-modified cationized colloidal silica (average secondary particle size 25 nm; 10% by mass).

[0213] [Abrasive grain F-1: Production of surface cation-modified colloidal silica] Colloidal silica stock solution (average primary particle diameter: 24 nm, average secondary particle diameter: 50 nm, silanol group density: 1.68 groups / nm) ２ A 1.87 mmol / L aqueous solution of 3-aminopropyltriethoxysilane was added to a 20% by mass solution of 3-aminopropyltriethoxysilane (dispersion medium: water) as an aqueous solution of silane coupling agent to obtain a dispersion of surface-modified cationized colloidal silica (average secondary particle size 50 nm; 10% by mass).

[0214] [Abrasive grain G-1: Preparation of unmodified colloidal silica] The stock solution of colloidal silica used in the production of abrasive grain A was prepared. Colloidal silica similar to that contained in the stock solution of colloidal silica used in the production of abrasive grain A was used as unmodified colloidal silica.

[0215] <Preparation of Polishing Composition 1> (Example 1-1) Abrasive grains A (sulfonic acid-modified colloidal silica) obtained above were added to pure water as a dispersion medium to obtain a mixture. Mono-n-octyl acid phosphate was added to this mixture as a compound satisfying condition (1) and / or condition (2) or as a comparative compound, and nitric acid was added as a pH adjuster. Then, immediately before polishing in the evaluation described later, hydrogen peroxide was added as an oxidizing agent using hydrogen peroxide solution with a concentration of 31% by mass, and the mixture was stirred at 25°C for 10 minutes to obtain a polishing composition. Here, the abrasive grains, the compound satisfying condition (1) and / or condition (2) or the comparative compound, and hydrogen peroxide were added in amounts (contents) relative to the total mass of the polishing composition to be produced that are shown in Table 1, and the pH adjuster was added so that the pH of the polishing composition to be produced was the value shown in Table 1.

[0216] (Examples 1-2 to 1-6, Comparative Example 1-2, and Examples 11-4 to 11-6) Except for changing the type of compound or comparative compound that satisfies condition (1) and / or condition (2), and the amount of the compound or comparative compound that satisfies condition (1) and / or condition (2), as shown in Table 1, polishing compositions according to Examples 1-2 to 1-6, Comparative Example 1-2, and Examples 11-4 to 11-6 were produced in the same manner as the production of the polishing composition of Example 1-1.

[0217] (Comparative Example 1-1) A polishing composition according to Comparative Example 1-1 was manufactured in the same manner as the polishing composition of Example 1-1, except that the presence or absence of the compound satisfying condition (1) and / or condition (2) or the comparative compound was changed as shown in Table 1.

[0218] (Examples 11-1 to 11-3) The polishing compositions according to Examples 11-1 to 11-3 were each produced in the same manner as the production of the polishing composition in Example 1-1, except that the type of compound or comparative compound satisfying condition (1) and / or condition (2), the amount of the compound or comparative compound satisfying condition (1) and / or condition (2), and the type of pH adjuster were changed as shown in Table 1.

[0219] (Comparative Example 1-3) The polishing composition according to Comparative Example 1-3 was manufactured in the same manner as the polishing composition according to Example 1-5, except that the type of abrasive grain was changed as shown in Table 1.

[0220] (Examples 11-7 to 11-8) The polishing compositions according to Examples 11-7 to 11-8 were manufactured in the same manner as the polishing composition of Example 1-5, except that the type of pH adjusting agent and the pH of the polishing composition were changed as shown in Table 1.

[0221] (Example 11-9) An abrasive composition according to Example 1-9 was manufactured in the same manner as the abrasive composition of Example 1-5, except that the presence or absence of an oxidizing agent was changed as shown in Table 1.

[0222] (Details of compounds or comparative compounds that satisfy condition (1) and / or condition (2)) In the production of polishing composition 1, and in the production of polishing compositions 2 to 5 described later, the compounds listed in Tables 1, 3, 5, 7, and 9 were used, respectively. Details of some of the compounds used in the production of polishing compositions 1 to 5 are shown below: • Mono-n-octyl acid phosphate (also known as mono-n-octyl phosphate); • Mono-n-dodecyl sodium phosphate (product name: mono-dodecyl sodium phosphate, manufacturer: Tokyo Chemical Industry Co., Ltd.); • HEDP (compound name: 1-hydroxyethylidene-1,1-diphosphonic acid); • NTMP (compound name: nitrilotris (methylenephosphonic acid)); • DTPMP (compound name: diethylenetriaminepentakis (methylenephosphonic acid)); • Butyl acid phosphate (also known as mono-n-butyl phosphate); • Mono(2-ethylhexyl) phosphate (also known as 2-ethylhexyl phosphate); • Mono-n-dodecyl phosphate (also known as mono-lauryl phosphate).

[0223] The average secondary particle size of the silica particles in the obtained polishing composition and the zeta potential of the silica particles in the polishing composition were measured using the method described above. These results are shown in Table 1.

[0224] <Evaluation 1> [Polishing Speed] The surface of the object to be polished was polished using each polishing composition obtained in Production 1 of the above polishing compositions under the above polishing conditions 1. The objects to be polished were W(A) and TiN(A) as described above.

[0225] The polishing rates of the tungsten film and the titanium nitride film were calculated. The selectivity ratio of the tungsten film to the titanium nitride film (tungsten film polishing rate / titanium nitride film polishing rate) was also calculated. Table 2 shows the evaluation results for polishing rate (Å / min) and selectivity ratio.

[0226]

[0227]

[0228] Tables 1 and 2 confirm that the polishing compositions according to the examples suppress the polishing rate of titanium nitride. Furthermore, Tables 1 and 2 confirm that the polishing compositions according to Examples 1-1 to 1-6 achieve a sufficient polishing rate for tungsten while also achieving a high selectivity ratio of tungsten to titanium nitride. On the other hand, the polishing compositions according to Examples 11-1 to 11-9 and Comparative Examples 1-1 to 1-3 were found to have inferior tungsten polishing rates, inferior selectivity ratios of tungsten to titanium nitride, or were difficult to use for polishing due to aggregation, compared to the polishing compositions according to Examples 1-1 to 1-6.

[0229] <Preparation of Polishing Composition 2> (Example 2-1) Abrasive grains A (sulfonic acid-modified colloidal silica) obtained above were added to pure water as a dispersion medium to obtain a mixture. To this mixture, n-hexylphosphonic acid was added as a surfactant, nitric acid was added as a pH adjuster, and then, immediately before polishing in the evaluation described later, hydrogen peroxide was added as an oxidizing agent using hydrogen peroxide solution with a concentration of 31% by mass, and the mixture was stirred at 25°C for 10 minutes to obtain a polishing composition. Here, the abrasive grains, surfactant and hydrogen peroxide were added in amounts (contents) relative to the total mass of the polishing composition to be produced that match the values ​​shown in Table 3, and the pH adjuster was added so that the pH of the polishing composition to be produced matched the value shown in Table 3.

[0230] (Examples 2-2 to 2-9, Example 21-1) Except for changing the type and amount of surfactant as shown in Table 3, polishing compositions according to Examples 2-2 to 2-9 and Example 21-1 were manufactured in the same manner as the production of the polishing composition in Example 2-1.

[0231] (Comparative Example 2-1) A polishing composition according to Comparative Example 2-1 was manufactured in the same manner as the polishing composition of Example 2-1, except that the presence or absence of a surfactant was changed as shown in Table 3.

[0232] The average secondary particle size of the silica particles in the obtained polishing composition and the zeta potential of the silica particles in the polishing composition were measured using the method described above. These results are shown in Table 3.

[0233] <Evaluation 2> [Polishing Speed] The surface of the object to be polished was polished using each polishing composition obtained in Production 2 of the above polishing composition under the above polishing conditions 2. The objects to be polished were W(B), Ti(B), TiN(B), and SiN(B), respectively.

[0234] The polishing rates for silicon nitride films, tungsten films, titanium films, and titanium nitride films were calculated. Furthermore, the selectivity ratios for tungsten films over titanium films (tungsten film polishing rate / titanium film polishing rate), tungsten films over titanium nitride films (tungsten film polishing rate / titanium nitride film polishing rate), and tungsten films over silicon nitride films (tungsten film polishing rate / silicon nitride film polishing rate) were calculated. The evaluation results for polishing rate (Å / min) and selectivity ratios are shown in Table 4.

[0235]

[0236]

[0237] From Tables 3 and 4, it was confirmed that the polishing compositions according to the examples suppressed the polishing speed of titanium and titanium nitride. Furthermore, from Tables 3 and 4, it was confirmed that the polishing compositions according to Examples 2-1 to 2-9 achieved a sufficient polishing speed for tungsten while also achieving a high selectivity ratio of tungsten to titanium, a high selectivity ratio of tungsten to titanium, a high selectivity ratio of tungsten to titanium nitride, and a high selectivity ratio of tungsten to silicon nitride. On the other hand, it was confirmed that the polishing composition according to Example 21-1 and the polishing composition according to Comparative Example 2-1 were inferior to the polishing compositions according to Examples 2-1 to 2-9 in terms of the selectivity ratio of tungsten to titanium, a selectivity ratio of tungsten to titanium nitride, and a selectivity ratio of tungsten to silicon nitride.

[0238] <Preparation of Polishing Composition 3> (Example 3-1) Abrasive grains A (sulfonic acid-modified colloidal silica) obtained above were added to pure water as a dispersion medium to obtain a mixture. To this mixture, n-octylphosphonic acid was added as a surfactant, nitric acid was added as a pH adjuster, and then, immediately before polishing in the evaluation described later, hydrogen peroxide was added as an oxidizing agent using hydrogen peroxide solution with a concentration of 31% by mass, and the mixture was stirred at 25°C for 10 minutes to obtain a polishing composition. Here, the abrasive grains, surfactant and hydrogen peroxide were added in amounts (contents) relative to the total mass of the polishing composition to be produced that match the values ​​shown in Table 5, and the pH adjuster was added so that the pH of the polishing composition to be produced matched the value shown in Table 5.

[0239] (Example 3-2) An abrasive composition according to Example 3-2 was manufactured in the same manner as the manufacturing of the abrasive composition in Example 3-1, except that the type of abrasive grain was changed as shown in Table 5.

[0240] (Examples 3-3 to 3-5) The polishing compositions according to Examples 3-3 to 3-5 were manufactured in the same manner as the polishing composition of Example 3-2, except that the amount of abrasive grains was changed as shown in Table 5.

[0241] (Comparative Example 3-1) A polishing composition according to Comparative Example 3-1 was manufactured in the same manner as the polishing composition of Example 3-1, except that the presence or absence of surfactant addition was changed as shown in Table 5.

[0242] The average secondary particle size of the silica particles in the obtained polishing composition and the zeta potential of the silica particles in the polishing composition were measured using the method described above. These results are shown in Table 5.

[0243] <Evaluation 3> [Polishing Speed] The surface of the object to be polished was polished using each polishing composition obtained in the above manufacturing 3 of the polishing compositions under the above polishing conditions 3. The objects to be polished were W(B), Ti(B), TiN(B), SiN(C), and TEOS(B), respectively.

[0244] The polishing rates of silicon nitride films, TEOS-type silicon oxide films, tungsten films, titanium films, and titanium nitride films were calculated. Furthermore, the selectivity ratios of tungsten films to TEOS-type silicon oxide films (tungsten film polishing rate / TEOS-type silicon oxide film polishing rate), tungsten films to silicon nitride films (tungsten film polishing rate / silicon nitride film polishing rate), tungsten films to titanium nitride films (tungsten film polishing rate / titanium nitride film polishing rate), and tungsten films to titanium films (tungsten film polishing rate / titanium film polishing rate) were calculated. The evaluation results for polishing rate (Å / min) and selectivity ratios are shown in Table 6.

[0245]

[0246]

[0247] From Tables 5 and 6, it was confirmed that the polishing compositions according to the examples suppressed the polishing speed of titanium and titanium nitride. Furthermore, from Tables 5 and 6, it was confirmed that when the average secondary particle size of the anion-modified silica particles was small, a sufficient polishing speed for tungsten was achieved, and in particular, the selectivity ratio of tungsten to silicon nitride and the selectivity ratio of tungsten to TEOS-type silicon oxide were improved.

[0248] Furthermore, Tables 5 and 6 confirm that when the concentration of anion-modified silica particles is low, a sufficient polishing rate for tungsten is achieved, and in particular, the selectivity ratio of tungsten to TEOS-type silicon dioxide is further improved.

[0249] <Preparation of Polishing Composition 4> (Example 4-1) Abrasive grain A (sulfonic acid-modified colloidal silica) obtained above was added to pure water as a dispersion medium to obtain a mixture. Ammonium lauryl sulfate and mono(2-ethylhexyl) phosphate (also known as 2-ethylhexyl phosphate ester) were added to this mixture, nitric acid was added as a pH adjuster, and then, immediately before polishing in the evaluation described later, hydrogen peroxide was added as an oxidizing agent using hydrogen peroxide solution with a concentration of 31% by mass, and the mixture was stirred at 25°C for 10 minutes to obtain a polishing composition. Here, the abrasive grains, ammonium lauryl sulfate, mono(2-ethylhexyl) phosphate, and hydrogen peroxide were added in amounts (contents) relative to the total mass of the polishing composition to be produced that match the values ​​in Table 7, and the pH adjuster was added so that the pH of the polishing composition to be produced matched the value in Table 7.

[0250] (Examples 4-2 to 4-3) The polishing compositions according to Examples 4-2 to 4-3 were prepared in the same manner as the production of the polishing composition in Example 4-1, except that the amount of ammonium lauryl sulfate was changed as shown in Table 7.

[0251] (Example 4-4) An abrasive composition according to Example 4-4 was prepared in the same manner as in Example 4-1, except that ammonium lauryl sulfate was replaced with sodium n-dodecylbenzenesulfonate.

[0252] (Examples 4-5 to 4-6) The polishing compositions according to Examples 4-5 to 4-6 were prepared in the same manner as the production of the polishing composition in Example 4-3, except that the amount of mono(2-ethylhexyl) phosphate was changed as shown in Table 7.

[0253] (Example 4-7) An abrasive composition according to Example 4-7 was prepared in the same manner as in Example 4-3, except that mono(2-ethylhexyl) phosphate was replaced with mono-n-dodecyl phosphate (also known as monolauryl phosphate ester).

[0254] (Example 4-8) An abrasive composition according to Example 4-8 was prepared in the same manner as the abrasive composition of Example 4-1, except that the presence or absence of mono(2-ethylhexyl) phosphate was changed as shown in Table 7.

[0255] Table 7 shows the composition and properties of each polishing composition.

[0256] The average secondary particle size of the silica particles in the obtained polishing composition and the zeta potential of the silica particles in the polishing composition were measured using the method described above. These results are shown in Table 7.

[0257] <Evaluation 4> [Polishing Speed] The surface of the object to be polished was polished using each polishing composition obtained in the production 4 of the above polishing composition under the above polishing conditions 1. The above W(A) and the above TiN(A) were used as the objects to be polished, respectively.

[0258] The polishing rates of the tungsten film and the titanium nitride film were calculated. The selectivity ratio of the tungsten film to the titanium nitride film (tungsten film polishing rate / titanium nitride film polishing rate) was also calculated. Table 8 shows the evaluation results for polishing rate (Å / min) and selectivity ratio.

[0259]

[0260]

[0261] From Tables 7 and 8, it was confirmed that the polishing compositions according to Examples 4-1 to 4-8 achieve a sufficient polishing speed for tungsten while also achieving a high selectivity ratio of tungsten to titanium nitride.

[0262] Furthermore, Tables 7 and 8 show that, in the polishing compositions according to the examples, a specific combination of surfactants can achieve a sufficient polishing speed for tungsten, and in particular, the selectivity ratio of tungsten to titanium nitride can be further improved.

[0263] <Preparation of Polishing Composition 5> (Example 5-1) Abrasive grains A (sulfonic acid-modified colloidal silica) obtained above were added to pure water as a dispersion medium to obtain a mixture. n-octylphosphonic acid and the sulfonic acid (salt) group-containing polymer S1 described later were added to this mixture in that order, nitric acid was added as a pH adjuster, and then, immediately before polishing in the evaluation described later, hydrogen peroxide was added as an oxidizing agent using hydrogen peroxide solution with a concentration of 31% by mass, and the mixture was stirred at 25°C for 10 minutes to obtain a polishing composition. Here, the abrasive grains, n-octylphosphonic acid, sulfonic acid (salt) group-containing polymer and hydrogen peroxide were added in amounts (contents) relative to the total mass of the polishing composition to be produced that match the values ​​shown in Table 9, and the pH adjuster was added so that the pH of the polishing composition to be produced matched the value shown in Table 9.

[0264] (Examples 5-2 to 5-4) The polishing compositions according to Examples 5-2 to 5-4 were prepared in the same manner as the production of the polishing composition in Example 5-1, except that the amount of the sulfonic acid (salt) group-containing polymer S1 was changed as shown in Table 9.

[0265] (Example 5-5) An abrasive composition according to Example 5-5 was produced in the same manner as in Example 5-1, except that the sulfonic acid (salt) group-containing polymer S1 was changed to the sulfonic acid (salt) group-containing polymer S2 described later.

[0266] (Examples 5-6 to 5-7) The polishing compositions according to Examples 5-6 to 5-7 were prepared in the same manner as the production of the polishing composition in Example 5-5, except that the amount of the sulfonic acid (salt) group-containing polymer S2 was changed as shown in Table 9.

[0267] (Example 5-8) An abrasive composition according to Example 5-8 was prepared in the same manner as in Example 5-1, except that the sulfonic acid (salt) group-containing polymer S1 was not added, ammonium lauryl sulfate was added, and the amount of ammonium lauryl sulfate was set to the value shown in Table 9.

[0268] (Details of sulfonic acid (salt) group-containing polymers) Details of the sulfonic acid (salt) group-containing polymers used in the production of the polishing composition 5 are shown below: • Sulfonic acid (salt) group-containing polymer S1 (Product name: Aron® A-6012, Manufacturer: Toagosei Co., Ltd.); • Sulfonic acid (salt) group-containing polymer S2: Polystyrene sulfonic acid (Product name: Polinas® PS-1, Manufacturer: Tosoh Finechem Co., Ltd.).

[0269] Table 9 shows the composition and properties of each polishing composition.

[0270] The average secondary particle size of the silica particles in the obtained polishing composition and the zeta potential of the silica particles in the polishing composition were measured using the method described above. These results are shown in Table 9.

[0271] <Evaluation 5> [Polishing Speed] The surface of the object to be polished was polished using each polishing composition obtained in manufacturing 5 of the above polishing composition under the above polishing conditions 4. The above W(B), above Ti(B), above TiN(B), and above SiN(C) were used as the object to be polished, respectively.

[0272] The polishing rates for silicon nitride films, tungsten films, titanium films, and titanium nitride films were calculated. Furthermore, the selectivity ratios for tungsten films over titanium nitride films (tungsten film polishing rate / titanium nitride film polishing rate), tungsten films over titanium films (tungsten film polishing rate / titanium film polishing rate), and tungsten films over silicon nitride films (tungsten film polishing rate / silicon nitride film polishing rate) were calculated. The evaluation results for polishing rate (Å / min) and selectivity ratios are shown in Table 10.

[0273]

[0274]

[0275] Tables 9 and 10 confirm that the polishing compositions according to Examples 5-1 to 5-8 achieve a sufficient polishing speed for tungsten while also achieving a high selectivity ratio of tungsten to titanium, a high selectivity ratio of tungsten to titanium nitride, and a high selectivity ratio of tungsten to silicon nitride.

[0276] Furthermore, Tables 9 and 10 show that, in the polishing compositions according to the examples, by combining a specific surfactant with a sulfonic acid (salt) group-containing polymer, it is possible to achieve a sufficient polishing speed for tungsten while further improving the selectivity ratio of tungsten to titanium and the selectivity ratio of tungsten to silicon nitride.

[0277] <6. Preparation of Polishing Composition> (Example 6-1) Abrasive grains A-1 (surface cation-modified colloidal silica) obtained above were added to pure water as a dispersion medium to obtain a mixed solution. Here, abrasive grains A-1 were added to the pure water in the form of a dispersion of abrasive grains A-1 obtained above. Mono-n-octyl acid phosphate was added to this mixed solution as a surfactant, and (+)-10-camphor sulfonic acid (abbreviated as CSA) was added as a pH adjuster. Then, immediately before polishing in the evaluation described later, hydrogen peroxide was added to the obtained composition as an oxidizing agent using hydrogen peroxide solution with a concentration of 31% by mass, and the mixture was stirred at 25°C for 10 minutes to obtain a polishing composition. Here, the abrasive grains, surfactant and hydrogen peroxide were added in amounts (contents) relative to the total mass of the polishing composition to be produced that match the values ​​in Table 11, and the pH adjuster was added so that the pH of the polishing composition to be produced matched the value in Table 11.

[0278] (Examples 6-2 to 6-7, Example 61-1) Except for changing the type and amount of surfactant as shown in Table 11, polishing compositions according to Examples 6-2 to 6-7 and Example 61-1 were manufactured in the same manner as the production of the polishing composition in Example 6-1.

[0279] (Comparative Example 6-1) A polishing composition according to Comparative Example 6-1 was manufactured in the same manner as the polishing composition of Example 6-1, except that the presence or absence of surfactant addition was changed as shown in Table 11.

[0280] (Comparative Example 6-2) The polishing composition according to Comparative Example 6-2 was manufactured in the same manner as the polishing composition of Example 6-3, except that the type of abrasive grain was changed as shown in Table 11.

[0281] (Example 6-8) The polishing composition according to Example 6-8 was manufactured in the same manner as the polishing composition according to Example 6-3, except that the type of pH adjusting agent was changed as shown in Table 11.

[0282] (Examples 6-9 to 6-13) Except for changing the type of abrasive grain as shown in Table 11, polishing compositions according to Examples 6-9 to 6-13 were manufactured in the same manner as the production of the polishing composition in Example 6-8.

[0283] (Example 6-14) An abrasive composition according to Example 6-14 was manufactured in the same manner as the abrasive composition of Example 6-10, except that the abrasive content was changed as shown in Table 11.

[0284] (Example 61-2) An abrasive composition according to Example 61-2 was manufactured in the same manner as the abrasive composition of Example 6-14, except that an oxidizing agent was not added.

[0285] (Example 61-3) The polishing composition according to Example 61-3 was manufactured in the same manner as the polishing composition according to Example 6-14, except that the pH of the polishing composition was changed as shown in Table 11.

[0286] (Details of surfactants) The compounds listed in Table 11 below were used in the manufacture of the abrasive composition. Details of some of the compounds used in the manufacture of the abrasive composition are shown below: • Lauryl EO2 acid phosphate (also known as diethylene glycol monolauryl ether acid phosphate); • Mono-n-octyl acid phosphate (also known as mono-n-octyl phosphate); • Butyl acid phosphate (also known as mono-n-butyl phosphate).

[0287] The electrical conductivity of the obtained polishing composition was measured using the method described above. The results are shown in Table 11. In addition, the average secondary particle diameter of the silica particles in the polishing composition, the average aspect ratio of the silica particles in the polishing composition, and the zeta potential of the silica particles in the polishing composition were measured. These results are shown in Table 12. The silanol group density values ​​of the silica particles before surface modification (the silanol group density values ​​of unmodified silica particles in Comparative Example 6-2) evaluated using the method described above are also shown in Table 12.

[0288] <Evaluation 6> [Polishing Speed] The surface of the object to be polished was polished using each of the polishing compositions obtained in the production of the above polishing compositions under the above polishing conditions 3. The objects to be polished were W(B), Ti(B), TiN(B), SiN(B), and TEOS(B), respectively.

[0289] The polishing rates for silicon nitride films, TEOS-type silicon oxide films, tungsten films, titanium films, and titanium nitride films were calculated. Furthermore, the selectivity ratios for tungsten films over titanium films (tungsten film polishing rate / titanium film polishing rate), tungsten films over titanium nitride films (tungsten film polishing rate / titanium nitride film polishing rate), tungsten films over silicon nitride films (tungsten film polishing rate / silicon nitride film polishing rate), and tungsten films over TEOS-type silicon oxide films (tungsten film polishing rate / TEOS-type silicon oxide film polishing rate) were calculated. The evaluation results for polishing rates (Å / min) and selectivity ratios are shown in Table 13.

[0290]

[0291]

[0292]

[0293] Tables 11 to 13 confirm that the polishing compositions according to the examples suppress the polishing speed of titanium and titanium nitride. Furthermore, Tables 11 to 13 confirm that the polishing compositions according to Examples 6-1 to 6-14 achieve a sufficient polishing speed for tungsten while also achieving a high selectivity ratio of tungsten to titanium nitride. On the other hand, the polishing compositions according to Examples 61-1 to 61-3 and Comparative Examples 6-1 to 6-2 were found to have inferior selectivity ratios of tungsten to titanium nitride compared to the polishing compositions according to Examples 6-1 to 6-14.

[0294] Furthermore, Tables 11 to 13 confirm that the polishing compositions according to the examples may also exhibit good selectivity ratios for tungsten relative to titanium, as well as for tungsten relative to silicon oxide and / or tungsten relative to titanium nitride.

[0295] <Evaluation 7: Evaluation of some polishing compositions produced in Polishing Composition Production 1, 2 and 6> For some polishing compositions produced in Polishing Composition Production 1, 2 and 6, Table 14 shows the evaluation results of the amount of adsorption (of the compound) to the quartz crystal microbalance electrode at the pH of the polishing composition, measured by the method described above, for compounds or comparative compounds that satisfy condition (1) and / or condition (2) and used in some polishing compositions produced in Polishing Composition Production 1, 2 and 6. Also, Table 14 shows the evaluation results of the water contact angle on the surface of titanium nitride after immersion of titanium nitride in the polishing composition, measured by the method described above, for some polishing compositions produced in Polishing Composition Production 1, 2 and 6.

[0296] In Table 14, the amount of compound adsorbed onto the quartz crystal microbalance electrode at the pH of the polishing composition is shown as "amount of compound adsorbed," and the water contact angle on the surface of titanium nitride after immersion in the polishing composition is shown as "water contact angle of titanium nitride after immersion."

[0297]

[0298] The results in Tables 1 to 14 confirm that a polishing composition containing modified abrasive grains and a compound selected from the group consisting of condition (1) and condition (2) above achieves a polishing inhibition effect on titanium materials.

[0299] This application is based on Japanese Patent Application No. 2025-055876, filed on 28 March 2025, Japanese Patent Application No. 2025-055887, filed on 28 March 2025, and Japanese Patent Application No. 2025-163606, filed on 30 September 2025, and the disclosures of these applications are referenced and incorporated as a whole.

Claims

1. A polishing composition comprising modified abrasive grains and a compound selected from the group consisting of the following conditions (1) and (2): Condition (1) The compound is a surfactant whose water-octanol partition coefficient logD at the pH of the polishing composition is greater than 0; Condition (2) The amount of the compound adsorbed onto the quartz crystal microbalance electrode at the pH of the polishing composition is 3 ng / cm² per unit area of ​​the quartz crystal microbalance electrode. ２ It must be the above.

2. The polishing composition according to claim 1, further comprising an oxidizing agent.

3. The polishing composition according to claim 1, wherein the pH is 1.0 or higher and 7.0 or lower.

4. In the above condition (2), the amount of adsorption of the compound is 40 ng / cm² per unit area of ​​the quartz crystal microbalance electrode. ２ The polishing composition according to claim 1 is used for polishing an object to be polished, which includes a tungsten material portion and at least one portion selected from the group consisting of the following portion 1 and portion 2: portion 1: titanium material portion, portion 2: portion comprising silicon and at least one selected from the group consisting of oxygen and nitrogen.

5. The polishing composition according to claim 1, wherein the modified abrasive particles include at least one selected from the group consisting of anionically modified silica particles and silica particles whose surface is cationically modified.

6. The modified abrasive grains include anionic modified silica particles, the compound satisfying at least one selected from the group consisting of condition (1) and condition (2) includes a compound satisfying condition (1), the polishing composition further comprises an oxidizing agent and water, the pH of the polishing composition is 1.0 or more and 6.0 or less, and the polishing composition is used for polishing an object comprising a tungsten material portion and at least one portion selected from the group consisting of the following portion 1 and portion 2: portion 1: titanium material portion, portion 2: portion comprising silicon and at least one selected from the group consisting of oxygen and nitrogen.

7. The modified abrasive grains include silica particles whose surfaces are cationically modified, the compound satisfying at least one selected from the group consisting of condition (1) and condition (2) includes a compound satisfying condition (1), the polishing composition further comprises an oxidizing agent and water, the pH of the polishing composition is 1.0 or more and 6.0 or less, and the polishing composition is used for polishing an object comprising a tungsten material portion and at least one portion selected from the group consisting of the following portion 1 and portion 2: portion 1: titanium material portion, portion 2: portion comprising silicon and at least one selected from the group consisting of oxygen and nitrogen.

8. The modified abrasive grains comprise silica particles chemically surface-modified with at least one silane coupling agent selected from the group consisting of silane coupling agents having amino groups and silane coupling agents having quaternary ammonium groups; the compound satisfying at least one selected from the group consisting of condition (1) and condition (2) comprises a compound satisfying condition (1); the polishing composition further comprises an oxidizing agent and water; the content of the oxidizing agent is greater than 0.005% by mass with respect to the total mass of the polishing composition; and the pH of the polishing composition is 1.0 or more and 3.0 or less, according to claim 1.

9. The polishing composition according to claim 1, wherein the surfactant comprises a compound comprising an alkyl group and at least one selected from the group consisting of phosphorus and sulfur.

10. The abrasive composition according to claim 1, wherein the surfactant satisfies (Ia), (IIa), or both of the following: (Ia) The surfactant comprises an alkylphosphonic acid (salt) having 6 to 11 carbon atoms; (IIa) The surfactant comprises at least one compound selected from the group consisting of alkyl phosphate esters having 6 or more carbon atoms and salts of alkyl phosphate esters having 6 or more carbon atoms; and at least one compound selected from the group consisting of alkyl sulfonic acid (salt) having 6 or more carbon atoms, alkylbenzene sulfonic acid (salt) having 6 or more carbon atoms, alkyl sulfate esters having 6 or more carbon atoms and salts of alkyl sulfate esters having 6 or more carbon atoms.

11. Abrasive compositions comprising modified abrasive grains and satisfying (I), (II), or both of the following: (I) the abrasive composition comprising an alkylphosphonic acid (salt) having 6 to 11 carbon atoms; (II) the abrasive composition comprising at least one compound selected from the group consisting of alkyl phosphate esters having 6 or more carbon atoms and salts of alkyl phosphate esters having 6 or more carbon atoms; and at least one compound selected from the group consisting of alkyl sulfonic acid (salt) having 6 or more carbon atoms, alkylbenzene sulfonic acid (salt) having 6 or more carbon atoms, alkyl sulfate esters having 6 or more carbon atoms and salts of alkyl sulfate esters having 6 or more carbon atoms.

12. The polishing composition according to claim 11, wherein the modified abrasive grains comprise anionic modified silica particles, the polishing composition further comprises an oxidizing agent and water, and the pH of the polishing composition is 1.0 or more and 5.0 or less.

13. The polishing composition according to any one of claims 1 to 12, further comprising a polymer containing a sulfonic acid (salt) group.

14. The polishing composition according to any one of claims 1 to 12, which is used for polishing an object to be polished including the portion 1, and has the characteristic that the water contact angle on the surface of the titanium material constituting the portion 1 of the object to be polished is 90° or more after being immersed in the polishing composition.

15. A polishing method comprising polishing an object to be polished, which includes a tungsten material portion and at least one portion selected from the group consisting of the following portion 1 and portion 2, using the polishing composition according to any one of claims 1 to 12; portion 1: titanium material portion, portion 2: portion comprising silicon and at least one selected from the group consisting of oxygen and nitrogen.

16. The polishing method according to claim 15, wherein the object to be polished comprises the tungsten material portion and at least one portion selected from the group consisting of portion 1 and portion 2, the tungsten material portion comprises a tungsten portion, and satisfies at least one condition selected from the group consisting of (S1), (S2), (S3), and (S4) below: (S1) portion 1 comprises a titanium portion, and the ratio of the polishing speed of the tungsten portion to the polishing speed of the titanium portion is 30.0 or more; (S2) portion 1 comprises a titanium nitride portion, and the ratio of the polishing speed of the tungsten portion to the polishing speed of the titanium nitride portion is 30.0 or more; (S3) portion 2 comprises a silicon nitride portion, and the ratio of the polishing speed of the tungsten portion to the polishing speed of the silicon nitride portion is 30.0 or more. (S4) The portion 2 includes a silicon oxide portion, and the ratio of the polishing speed of the tungsten portion to the polishing speed of the silicon oxide portion is 4.0 or more.

17. A method for manufacturing a semiconductor substrate, comprising polishing a substrate including an object to be polished which includes at least one portion selected from the group consisting of the tungsten material portion, portion 1, and portion 2, by the polishing method described in claim 15.

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